U.S. patent application number 15/019774 was filed with the patent office on 2016-11-17 for organic light-emitting display device.
The applicant listed for this patent is SAMSUNG DISPLAY CO., LTD.. Invention is credited to Yongjin Kim.
Application Number | 20160336541 15/019774 |
Document ID | / |
Family ID | 57277792 |
Filed Date | 2016-11-17 |
United States Patent
Application |
20160336541 |
Kind Code |
A1 |
Kim; Yongjin |
November 17, 2016 |
ORGANIC LIGHT-EMITTING DISPLAY DEVICE
Abstract
An organic light-emitting display device includes: a substrate;
a driving thin film transistor on the substrate; and a DAM at an
outermost portion of the substrate, where the DAM includes an
inorganic layer and includes a first metallic DAM. The first
metallic DAM may include two or more metal layers spaced apart at a
set interval.
Inventors: |
Kim; Yongjin; (Yongin-si,
KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SAMSUNG DISPLAY CO., LTD. |
Yongin-si |
|
KR |
|
|
Family ID: |
57277792 |
Appl. No.: |
15/019774 |
Filed: |
February 9, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 27/124 20130101;
H01L 27/3265 20130101; H01L 51/5246 20130101; H01L 27/1255
20130101; H01L 51/5256 20130101; H01L 27/1248 20130101; H01L
51/5253 20130101; H01L 27/3262 20130101 |
International
Class: |
H01L 51/52 20060101
H01L051/52; H01L 27/32 20060101 H01L027/32 |
Foreign Application Data
Date |
Code |
Application Number |
May 12, 2015 |
KR |
10-2015-0066242 |
Claims
1. An organic light-emitting display device comprising: a
substrate; a driving thin film transistor on the substrate; and a
DAM at an outermost portion of the substrate, wherein the DAM
comprises an inorganic layer and a first metallic DAM.
2. The device of claim 1, wherein the first metallic DAM comprises
two or more metal layers spaced apart at a set interval.
3. The device of claim 2, wherein the first metallic DAM comprises
three metal layers spaced apart at a set interval.
4. The device of claim 1, wherein the DAM has a step difference at
an upper portion of the inorganic layer and a step difference at a
lower portion of the inorganic layer of the first metallic DAM.
5. The device of claim 1, wherein the first metallic DAM is formed
on an upper portion of a gate insulating layer; and wherein the DAM
further comprises a first interlayer insulating layer provided on
an upper portion of the first metallic DAM.
6. The device of claim 5, further comprising: a storage capacitor
comprising a first electrode coupled with a driving gate electrode
of the driving thin film transistor, and a second electrode on an
upper portion of the first electrode and insulated from the first
electrode, wherein the driving gate electrode and the first
electrode are integrally formed in a same layer, and the first
metallic DAM is in the layer in which the driving gate electrode
and the first electrode are formed.
7. The device of claim 6, wherein the first interlayer insulating
layer is between the first electrode and the second electrode and
insulates the second electrode from the first electrode.
8. The device of claim 6, further comprising: a second interlayer
insulating layer on the first interlayer insulating layer and
having an opening that exposes a portion of the first interlayer
insulating layer, wherein the second electrode is in the
opening.
9. The device of claim 5, further comprising: an organic
light-emitting diode on an upper portion of the driving thin film
transistor; and an encapsulation structure on an upper portion of
the organic light-emitting diode and sealing the organic
light-emitting diode, wherein the encapsulation structure comprises
alternately stacked thin film encapsulation organic layers and thin
film encapsulation inorganic layers.
10. The device of claim 9, wherein the DAM further comprises a thin
film encapsulation inorganic layer that extends to a portion of the
first interlayer insulating layer.
11. The device of claim 1, wherein the DAM comprises a second
metallic DAM on an upper portion of the first metallic DAM.
12. The device of claim 11, wherein the second metallic DAM
comprises two or more metal layers spaced apart at a set
interval.
13. The device of claim 11, wherein the DAM further comprises: a
first interlayer insulating layer formed between the first metallic
DAM and the second metallic DAM; and a second interlayer insulating
layer formed on an upper portion of the first interlayer insulating
layer and covering the second metallic DAM.
14. The device of claim 11, further comprising: a storage capacitor
comprising a first electrode coupled with a driving gate electrode
of the driving thin film transistor, and a second electrode on an
upper portion of the first electrode and insulated from the first
electrode, wherein the driving gate electrode and the first
electrode are integrally formed in a same layer, the first metallic
DAM is in the layer in which the driving gate electrode and the
first electrode are formed, and the second metallic DAM is formed
in a layer in which the second electrode is formed.
15. The device of claim 14, wherein: the inorganic layer comprises
a first interlayer insulating layer, the device further comprises a
second interlayer insulating layer on the first interlayer
insulating layer and having an opening that exposes a portion of
the first interlayer insulating layer, and the second electrode is
in the opening.
16. The device of claim 15, further comprising: an organic
light-emitting diode on an upper portion of the driving thin film
transistor; and an encapsulation structure on an upper portion of
the organic light-emitting diode, and comprising alternatively
stacked thin film encapsulation organic layers and thin film
encapsulation inorganic layers, and sealing the organic
light-emitting diode, wherein the DAM further comprises a thin film
encapsulation inorganic layer that extends to a portion of the
second interlayer insulating layer.
17. The device of claim 11, wherein the DAM further comprises a
third metallic DAM on an upper portion of the second metallic
DAM.
18. The device of claim 17, wherein the third metallic DAM
comprises two or more metal layers spaced apart at a set
interval.
19. The device of claim 17, wherein the DAM further comprises: a
first interlayer insulating layer formed between the first metallic
DAM and the second metallic DAM; a second interlayer insulating
layer formed on an upper portion of the second metallic DAM; and a
thin film encapsulation inorganic layer that extends up to an upper
portion of the third metallic DAM.
20. The device of claim 17, further comprising: a storage capacitor
comprising a first electrode coupled to a driving gate electrode of
the driving thin film transistor, and a second electrode on an
upper portion of the first electrode and insulated from the first
electrode; and a data line on an upper portion of the second
electrode, wherein the driving gate electrode and the first
electrode are integrally formed in a same layer, the first metallic
DAM is in the layer in which the driving gate electrode and the
first electrode are formed, the second metallic DAM is in a layer
in which the second electrode is formed, and the third metallic DAM
is in a layer in which the data line is formed.
21. An organic light-emitting display device comprising: a
substrate; a driving thin film transistor on the substrate; and a
DAM at an outermost portion of the substrate, wherein the DAM
comprises an inorganic layer, a first metallic DAM and a second
metallic DAM on an upper portion of the first metallic DAM, and
wherein the inorganic layer comprises a first interlayer insulating
layer between the first metallic DAM and the second metallic DAM, a
second interlayer insulating layer on the second metallic DAM, and
a thin film encapsulation inorganic layer on an upper portion of
the second interlayer insulating layer.
22. The device of claim 21, further comprising: a storage capacitor
comprising a first electrode coupled to a driving gate electrode of
the driving thin film transistor, and a second electrode on an
upper portion of the first electrode and insulated from the first
electrode, wherein the driving gate electrode and the first
electrode are integrally formed in a same layer, the first metallic
DAM is in the layer in which the driving gate electrode and the
first electrode are formed, and the second metallic DAM is in a
layer in which the second electrode is formed.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims priority to and the benefit of
Korean Patent Application No. 10-2015-0066242, filed on May 12,
2015, in the Korean Intellectual Property Office, the entire
content of which is incorporated herein by reference.
BACKGROUND
[0002] 1. Field
[0003] One or more exemplary embodiments relate to an organic
light-emitting display device.
[0004] 2. Description of the Related Art
[0005] An organic light-emitting display device includes an organic
light-emitting diode including a hole injection electrode, an
electron injection electrode, and an organic emission layer
disposed therebetween. The organic light-emitting display device is
a self-luminous display device in which an exciton generated when a
hole injected from the hole injection electrode and an electron
injected from the electron injection electrode recombine in the
organic emission layer and the exciton falls down (e.g.,
transition) from an excited state to a ground state to emit
light.
[0006] Since the organic light-emitting display device, which is a
self-luminous display device, does not require a separate light
source, it may be driven by a low voltage and configured in a
lightweight and slim profile, and provides high quality
characteristics such as a wide viewing angle, high contrast, a fast
respond speed, etc., so that it is in the limelight as a
next-generation display device.
SUMMARY
[0007] One or more exemplary embodiments include an organic
light-emitting display device.
[0008] Additional aspects of embodiments will be set forth in part
in the description which follows and, in part, will be apparent
from the description, or may be learned by practice of the
presented embodiments.
[0009] According to one or more exemplary embodiments, an organic
light-emitting display device includes: a substrate; a driving thin
film transistor provided on the substrate; and a DAM disposed at an
outermost portion of the substrate, and the DAM includes an
inorganic layer and includes a first metallic DAM therein.
[0010] The first metallic DAM may include two or more metals spaced
apart at a set interval.
[0011] The first metallic DAM may include three metals spaced apart
at a set interval.
[0012] The DAM may have a step difference between an upper portion
of the inorganic layer and a lower portion of the inorganic layer
based on the first metallic DAM.
[0013] The first metallic DAM is formed on an upper portion of a
gate insulating layer; and the DAM may further include a first
interlayer insulating layer provided on an upper portion of the
first metallic DAM.
[0014] The organic light-emitting display device may further
include: a storage capacitor including a first electrode coupled or
connected with a driving gate electrode of the driving thin film
transistor, and a second electrode provided on an upper portion of
the first electrode and insulated from the first electrode, and the
driving gate electrode and the first electrode may be integrally
formed in a same layer, and the first metallic DAM may be formed in
the layer in which the driving gate electrode and the first
electrode are formed.
[0015] The first interlayer insulating layer may be formed between
the first electrode and the second electrode and may insulate the
second electrode from the first electrode.
[0016] The organic light-emitting display device may further
include: a second interlayer insulating layer disposed on the first
interlayer insulating layer and including an opening that exposes a
portion of the first interlayer insulating layer, and the second
electrode may be disposed in the opening.
[0017] The organic light-emitting display device may further
include: an organic light-emitting diode formed on an upper portion
of the driving thin film transistor; and an encapsulation structure
formed on an upper portion of the organic light-emitting diode and
sealing the organic light-emitting diode, and the encapsulation
structure may include alternately stacked thin film encapsulation
organic layers and thin film encapsulation inorganic layers.
[0018] The DAM may further include a thin film encapsulation
inorganic layer and extend to a portion of the first interlayer
insulating layer.
[0019] The DAM may include a second metallic DAM formed on an upper
portion of the first metallic DAM.
[0020] The second metallic DAM may include two or more metals
spaced apart at a set interval.
[0021] The DAM may further include: a first interlayer insulating
layer formed between the first metallic DAM and the second metallic
DAM; and a second interlayer insulating layer formed on an upper
portion of the first interlayer insulating layer and covering the
second metallic DAM.
[0022] The organic light-emitting display device may further
include: a storage capacitor including a first electrode coupled or
connected with a driving gate electrode of the driving thin film
transistor, and a second electrode provided on an upper portion of
the first electrode and insulated from the first electrode, and the
driving gate electrode and the first electrode may be integrally
formed in a same layer, the first metallic DAM may be formed in the
layer in which the driving gate electrode and the first electrode
are formed, and the second metallic DAM may be formed in a layer in
which the second electrode is formed.
[0023] The organic light-emitting display device may further
include: a second interlayer insulating layer disposed on the first
interlayer insulating layer and including an opening that exposes a
portion of the first interlayer insulating layer, and the second
electrode may be disposed in the opening.
[0024] The organic light-emitting display device may further
include: an organic light-emitting diode formed on an upper portion
of the driving thin film transistor; and an encapsulation structure
formed on an upper portion of the organic light-emitting diode,
including alternatively stacked thin film encapsulation organic
layers and thin film encapsulation inorganic layers, and sealing
the organic light-emitting diode, and the DAM may further include a
thin film encapsulation inorganic layer and extend to a portion of
the second interlayer insulating layer.
[0025] The DAM may further include a third metallic DAM formed on
an upper portion of the second metallic DAM.
[0026] The third metallic DAM may include two or more metals spaced
apart at a set interval.
[0027] The DAM may further include: a first interlayer insulating
layer formed between the first metallic DAM and the second metallic
DAM; a second interlayer insulating layer formed on an upper
portion of the second metallic DAM; and a thin film encapsulation
inorganic layer that extends up to an upper portion of a third
metallic DAM.
[0028] The organic light-emitting display device may further
include: a storage capacitor including a first electrode coupled or
connected to a driving gate electrode of the driving thin film
transistor, and a second electrode provided on an upper portion of
the first electrode and insulated from the first electrode; and a
data line disposed on an upper portion of the second electrode, and
the driving gate electrode and the first electrode may be
integrally formed in a same layer, the first metallic DAM may be
formed in the layer in which the driving gate electrode and the
first electrode are formed, the second metallic DAM may be formed
in a layer in which the second electrode is formed, and the third
metallic DAM may be formed in a layer in which the data line is
formed.
[0029] According to one or more exemplary embodiments, an organic
light-emitting display device includes: a substrate; a driving thin
film transistor provided on the substrate; and a DAM disposed at an
outermost portion of the substrate, and the DAM includes an
inorganic layer and includes a first metallic DAM therein and a
second metallic DAM disposed on an upper portion of the first
metallic DAM, and the inorganic layer includes a first interlayer
insulating layer provided between the first metallic DAM and the
second metallic DAM, a second interlayer insulating layer formed on
the second metallic DAM, and a thin film encapsulation inorganic
layer provided on an upper portion of the second interlayer
insulating layer.
[0030] The organic light-emitting display device may further
include: a storage capacitor including a first electrode coupled or
connected to a driving gate electrode of the driving thin film
transistor, and a second electrode provided on an upper portion of
the first electrode and insulated from the first electrode, and the
driving gate electrode and the first electrode may be integrally
formed in a same layer, and the first metallic DAM may be formed in
the layer in which the driving gate electrode and the first
electrode are formed, and the second metallic DAM may be formed in
a layer in which the second electrode is formed.
[0031] An exemplary embodiment provides a feature (e.g., an
advantageous effect) of controlling a Ti tip defect by forming a
DAM including a metallic DAM and an inorganic material (e.g., an
interlayer insulating layer).
[0032] Also, since a DAM includes an inorganic layer, an inorganic
layer of a thin film encapsulation structure may extend up to an
outer portion, so that a dead space may be suitably or
advantageously reduced.
[0033] The effect of exemplary embodiments may be derived from
content to be described below with reference to the drawings in
addition to the above-described content.
BRIEF DESCRIPTION OF THE DRAWINGS
[0034] These and/or other aspects will become apparent and more
readily appreciated from the following description of the exemplary
embodiments, taken in conjunction with the accompanying drawings in
which:
[0035] FIG. 1 is a schematic cross-sectional view illustrating an
organic light-emitting display device according to an exemplary
embodiment;
[0036] FIG. 2 is a schematic cross-sectional view illustrating a
display portion of an organic light-emitting display device
according to an exemplary embodiment;
[0037] FIG. 3 is a schematic cross-sectional view illustrating a
portion of an organic light-emitting display device according to an
exemplary embodiment;
[0038] FIG. 4 is a schematic cross-sectional view illustrating an
organic light-emitting display device according to an exemplary
embodiment;
[0039] FIG. 5 is a schematic cross-sectional view illustrating an
organic light-emitting display device according to an exemplary
embodiment; and
[0040] FIG. 6 is a schematic cross-sectional view illustrating an
organic light-emitting display device according to an exemplary
embodiment.
DETAILED DESCRIPTION
[0041] As the inventive concept allows for various changes and
numerous embodiments, exemplary embodiments will be illustrated in
the drawings and described in detail in the written description. An
effect and a characteristic of the inventive concept, and a method
for accomplishing these will be apparent when exemplary embodiments
described below in detail are referred together with the drawings.
However, the inventive concept is not limited to the exemplary
embodiments described below and may be implemented in various
forms.
[0042] Hereinafter, exemplary embodiments are described in detail
with reference to the accompanying drawings. Like reference
numerals are used for like or corresponding elements when
description is made with reference to the drawings, and repeated
description thereof is not provided.
[0043] As used herein, the term "and/or" includes any and all
combinations of one or more of the associated listed items.
Expressions such as "at least one of," when preceding a list of
elements, modify the entire list of elements and do not modify the
individual elements of the list.
[0044] It will be understood that although the terms "first",
"second", etc. may be used herein to describe various components,
these components should not be limited by these terms. These
components are only used to distinguish one component from
another.
[0045] As used herein, the singular forms "a," "an" and "the" are
intended to include the plural forms as well, unless the context
clearly indicates otherwise.
[0046] It will be further understood that the terms "comprises"
and/or "comprising" used herein specify the presence of stated
features or components, but do not preclude the presence or
addition of one or more other features or components.
[0047] It will be understood that when a layer, region, or
component is referred to as being "on," "formed on," "coupled to,"
or "connected to" another layer, region, or component, it can be
directly or indirectly on, formed on, coupled to, or connected to
the other layer, region, or component. That is, for example,
intervening layers, regions, or components may be present. In
addition, it will also be understood that when an element or layer
is referred to as being "between" two elements or layers, it can be
the only element or layer between the two elements or layers, or
one or more intervening elements or layers may also be present.
[0048] Sizes of elements in the drawings may be exaggerated for
convenience of explanation. In other words, since sizes and
thicknesses of components in the drawings may be arbitrarily
illustrated for convenience of explanation, the following
embodiments are not limited thereto.
[0049] When a certain embodiment may be implemented differently, a
specific process order may be performed differently from the
described order. For example, two consecutively described processes
may be performed substantially at the same time (e.g., concurrently
or simultaneously) or performed in an order opposite to the
described order.
[0050] FIG. 1 is a schematic cross-sectional view illustrating an
organic light-emitting display device according to an exemplary
embodiment, and FIG. 2 is a schematic cross-sectional view
illustrating a display portion of an organic light-emitting display
device according to an exemplary embodiment.
[0051] As illustrated in FIG. 1, a buffer layer 110 may be formed
on an upper portion of a substrate 100. The buffer layer 110 may
prevent or inhibit impurity ions from diffusing (e.g., from
diffusing into the substrate), prevent or inhibit moisture or the
air from penetrating (e.g., from penetrating into the display
device through the substrate), and serve as a barrier layer and/or
a blocking layer for planarizing a surface (e.g., a surface of the
substrate).
[0052] Referring to FIGS. 1 and 2, a thin film transistor (TFT) may
be formed on an upper portion of the buffer layer 110. A
semiconductor layer A of the TFT may include polysilicon, and may
include a channel region undoped with impurities, and a source
region and a drain region respectively doped with impurities,
disposed at two (e.g., both) sides of the channel region. Here, the
impurities change depending on a kind of the TFT, and may be N-type
impurities or P-type impurities (e.g., the source and drain regions
may be doped independently with N-type or P-type impurities). After
the semiconductor layer A is formed, a gate insulating layer 210
may be formed on an upper portion of the semiconductor layer A over
the entire surface (or substantially the entire surface) of the
substrate 100. The gate insulating layer 210 may include a single
layer or layers (e.g., a plurality of layers) including an
inorganic material such as a silicon oxide or a silicon nitride,
etc. The gate insulating layer 210 insulates the semiconductor
layer A from a gate electrode G disposed thereon.
[0053] After the gate insulating layer 120 is formed, the gate
electrode G may be formed on an upper portion of the gate
insulating layer 120. The gate electrode G may be formed via a
photolithography process and/or an etching process.
[0054] The gate electrode G may include one or more metals selected
from Mo, Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Ti, W, and
Cu.
[0055] After the gate electrode G is formed, a first interlayer
insulating layer 230 may be formed on the entire surface (or
substantially the entire surface) of the substrate 100.
[0056] The first interlayer insulating layer 230 may include an
inorganic material. For example, the first interlayer insulating
layer 230 may include a metallic oxide or a metallic nitride. In
some embodiments, the inorganic material may include SiO2, SiNx
(1/2.ltoreq.x.ltoreq.2, e.g., x=1.33), SiON, Al.sub.2O.sub.3, TiO2,
Ta2O5, HfO2, or ZnO2, etc.
[0057] The first interlayer insulating layer 230 may include layers
(e.g., a plurality of layers) or a single layer including an
inorganic material such as SiOy (1.ltoreq.y.ltoreq.2, e.g., y=2)
and/or SiNx (1/2.ltoreq.x.ltoreq.2, e.g., x=1.33), etc. In some
exemplary embodiments, the first interlayer insulating layer 230
may include a double structure of SiOy/SiNx or SiNx/SiOy.
[0058] As illustrated in FIG. 1, a DAM including the first
interlayer insulating layer 230 and including a first metallic dam
410 therein may be at a side of the substrate 100 (e.g., formed on
the outermost portion of the substrate 100). An effect that by the
DAM, a lateral side of the organic light-emitting display device
becomes strong against damage may be obtained (e.g., in some
embodiments, the DAM protects the lateral side of the organic
light-emitting display from damage). The structure and role of the
DAM are described in more detail below.
[0059] As illustrated in FIG. 2, a source electrode S, a drain
electrode D of the TFT, a data line, and a driving voltage line may
be disposed on an upper portion of the first interlayer insulating
layer 230.
[0060] The source electrode S, the drain electrode D, the data
line, and the driving voltage line may include one or more metals
selected from Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo,
Ti, W, and Cu.
[0061] As illustrated in FIG. 2, a via layer 250 is formed on the
entire surface (or substantially the entire surface) of the
substrate 100 to cover wirings such as, for example, the source
electrode S, the drain electrode D, the data line, and/or the
driving voltage line. A pixel electrode 281 may be formed on an
upper portion of the via layer 250. According to an exemplary
embodiment illustrated in FIG. 2, the pixel electrode 281 is
coupled or connected with the drain electrode D through a via
hole.
[0062] The via layer 250 may include an insulating material. For
example, the via layer 250 may include a single layer or layers
(e.g., a plurality of layers) including an inorganic material, an
organic material, or an organic/inorganic compound, and may be
formed by using various suitable deposition methods.
[0063] As illustrated in FIG. 2, an organic light-emitting diode
(OLED) is provided to the upper portion of the via layer 250. The
OLED includes the pixel electrode 281, an interlayer 283 including
an organic emission layer, and an opposite electrode 285. Also, the
organic light-emitting display device of FIG. 2 may further include
a pixel defining layer 270. As shown in FIG. 2, the buffer layer
110, the gate insulating layer 210, the first interlayer insulating
layer 230, the via layer 250, and the pixel defining layer 270 may
be included in a stack 200. In the embodiment shown in FIG. 1, the
stack 200 includes the gate insulating layer 210, the first
interlayer insulating layer 230, and the via layer 250.
[0064] The pixel electrode 281 and/or the opposite electrode 285
may be provided as a transparent electrode or a reflective
electrode. In the case where the pixel electrode 281 and/or the
opposite electrode 285 are provided as a transparent electrode,
they may include ITO, IZO, ZnO, or In.sub.2O.sub.3. In the case
where the pixel electrode 281 and/or the opposite electrode 285 are
provided as a reflective electrode, they may include a reflective
layer including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a
compound thereof, etc., and a transparent layer including ITO, IZO,
ZnO, or In.sub.2O.sub.3. In some exemplary embodiments, the pixel
electrode 281 or the opposite electrode 285 may have an ITO/Ag/ITO
structure.
[0065] As illustrated in FIG. 2, the pixel defining layer 270 may
define a pixel region and a non-pixel region. The pixel defining
layer 270 may include an opening 270a that exposes the pixel
electrode 281 and may be formed to entirely cover (or substantially
entirely cover) the substrate 100 (e.g., the pixel defining layer
270 may be formed to cover the entire or substantially the entire
surface of the substrate 100 and the opening 270a may then be
formed in the pixel defining layer 270). An interlayer 283 which
will be described in more detail below may be formed in the opening
270a, so that the opening 270a may become a substantial pixel
region (e.g., the opening 270a may substantially define the pixel
region).
[0066] The pixel electrode 281, the interlayer 283, and the
opposite electrode 285 may form the organic light-emitting diode
(OLED). A hole and an electron respectively injected from the pixel
electrode 281 and the opposite electrode 285 of the OLED may
recombine in the organic emission layer of the interlayer 283 to
emit light.
[0067] The interlayer 283 may have the organic emission layer. In
some embodiments, the interlayer 283 may have the organic emission
layer, and besides, may further have at least one selected from a
hole injection layer (HIL), a hole transport layer (HTL), an
electron transport layer (ETL), and an electron injection layer
(EIL). The present exemplary embodiment is not limited thereto, and
the interlayer 283 may have the organic emission layer and further
have other various suitable functional layers.
[0068] The opposite electrode 285 is disposed on the interlayer
283. The opposite electrode 285 forms an electric field with the
pixel electrode 281 to allow light to be emitted from the
interlayer 283. The pixel electrode 281 may be patterned every
pixel (e.g., may be patterned to correspond to the pixels), and the
opposite electrode 285 may be formed such that a common voltage is
applied over all pixels.
[0069] The pixel electrode 281 may serve as an anode electrode, and
the opposite electrode 285 may serve as a cathode electrode, but
they are not limited thereto. For example, the pixel electrode 281
may serve as a cathode electrode, and the opposite electrode 285
may serve as an anode electrode.
[0070] As illustrated in FIG. 1, an encapsulation structure 300 for
sealing the OLED from the air and moisture may be formed on the
upper portion of the OLED.
[0071] The encapsulation structure 300 may be formed in various
suitable shapes, and formed by stacking thin films as illustrated
in FIG. 1.
[0072] The encapsulation structure 300 may be formed on the upper
portion of the substrate 100 to cover the OLED as illustrated in
FIG. 1. The encapsulation structure 300 is a structure where layers
are stacked, and may be formed in a structure where an inorganic
layer 310 and an organic layer 330 are stacked in turns (e.g.,
alternately).
[0073] Though FIG. 1 illustrates an exemplary embodiment where a
first inorganic layer 311, a first organic layer 330, and a second
inorganic layer 313 are sequentially stacked, the number of thin
film layers is not limited thereto, of course.
[0074] The inorganic layer 310 may solidly block or reduce
penetration of oxygen or moisture, and the organic layer 330 may
absorb stress of the inorganic layer 310 to give flexibility.
[0075] The inorganic layer 310 may be a single layer or a stacked
layer including a metallic oxide or a metallic nitride. For
example, the inorganic layers may include at least one selected
from SiNx (1/2.ltoreq.x.ltoreq.2, e.g., x=1.33), Al.sub.2O.sub.3,
SiO.sub.2, and TiO.sub.2.
[0076] The organic layer 330 may include a polymer, and for
example, may be a single layer or a stacked layer including at
least one selected from polyethylene terephthalate, polyimide,
polycarbonate, epoxy, polyethylene, and polyacrylate. For example,
the organic layers may include polyacrylate. In some embodiments,
the organic layers may include a polymerized monomer composition
including a diacrylate-based monomer and a triacrylate-based
monomer. The monomer composition may further include a
monoacrylate-based monomer. Also, the monomer composition may
further include a photoinitiator such as monoacrylphosphine oxide
(TPO) but is not limited thereto.
[0077] The organic light-emitting display device according to an
exemplary embodiment may prevent or inhibit penetration of oxygen
and moisture and concurrently or simultaneously secure flexibility
by forming the encapsulation structure 300 in a structure in which
the inorganic layer 310 and the organic layer 330 are stacked
alternately.
[0078] FIG. 3 is a schematic cross-sectional view illustrating a
portion of an organic light-emitting display device according to an
exemplary embodiment.
[0079] As illustrated in FIGS. 1 and 3, a DAM including the first
interlayer insulating layer 230 and including the first metallic
dam 410 therein may be at a side of the substrate 100 (e.g., formed
on the outermost portion of the substrate 100).
[0080] The DAM may include the first interlayer insulating layer
230 including an inorganic layer, and include the first metallic
dam 410 inside the inorganic layer.
[0081] The first metallic dam (DAM) 410 may include two or more
metals (e.g., two or more metal layers) spaced apart by a set or
predetermined interval. FIGS. 1 and 3 illustrate an exemplary
embodiment and the first metallic DAM 410 may include three metals
(e.g., three metal layers). Of course, the number of metals forming
the first metallic DAM 410 is not limited thereto and the first
metallic DAM 410 may include a plurality of metals.
[0082] The first metallic DAM 410 may include one or more metals
selected from Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo,
Ti, W, and Cu.
[0083] The organic light-emitting display device according to the
present exemplary embodiment may include the first metallic DAM 410
where a DAM is formed on the upper portion of the gate insulating
layer 210, and the first interlayer insulating layer 230 formed on
the upper portion of the first metallic DAM 410 and including an
inorganic material as illustrated in FIG. 3.
[0084] Also, as illustrated in FIG. 1, the DAM may also include the
thin film encapsulation inorganic layer 310 of the encapsulation
structure 300 formed on the upper portion of the first interlayer
insulating layer 230, that extends up to the outer portion of the
substrate 100.
[0085] Since the DAM includes the first metallic DAM 410 and the
first interlayer insulating layer 230 which is an inorganic layer,
a step difference may be formed between the first interlayer
insulating layer 230 and the thin film encapsulation inorganic
layer 310 of the encapsulation structure 300. For example, the DAM
may have a step difference at an upper portion of the inorganic
layer (e.g., the first interlayer insulating layer 230) and may
have a step difference at a lower portion of the inorganic layer
(e.g., the first interlayer insulating layer 230).
[0086] Since the DAM at the side of the substrate 100 (e.g., formed
on the outermost portion of the substrate 100) is formed to have a
step difference by including the first metallic DAM 410, the
organic light-emitting display device according to an exemplary
embodiment has a feature (e.g., an advantageous effect) of
strengthening the lateral structure which would otherwise be more
vulnerable to damage.
[0087] For example, since the DAM of the organic light-emitting
display device according to an exemplary embodiment includes the
first metallic DAM 410 having stiffness therein as compared to a
DAM that includes an inorganic layer but does not include the first
metallic DAM, the organic light-emitting display device is
strengthened and thus has a feature of protecting against
damage.
[0088] Also, the first interlayer insulating layer 230 and the thin
film encapsulation inorganic layer 310 are formed to have a step
difference at the DAM by the first metallic DAM 410, and thus the
organic light-emitting display device has a feature (e.g., an
advantageous effect) of controlling Ti tip.
[0089] Ti tip is a problem caused by a crack DAM (e.g., a cracked
DAM) including an inorganic layer. Since a profile of the crack DAM
that includes an inorganic layer but does not include the first
metallic DAM is formed to have an angle of 80-90 degrees (e.g., an
angle of 80 to 90 degrees relative to the upper surface of the
substrate), when etching is performed after a layer is formed
during a process of forming S/D (e.g., source/drain), a residual
layer of S/D remains.
[0090] At this point, there is a probability that a Ti component of
an S/D residual layer is separated and moves into a display region
during a subsequent process, and a defective display device may be
caused by this Ti component of the S/D residual layer. For example,
Ti tip caused by a DAM that includes an inorganic layer but does
not include the first metallic DAM may result in a defective
display device as a result of Ti contaminating the display region
of the display device.
[0091] To solve this problem, an organic light-emitting display
device according to the present exemplary embodiment allows a DAM
at the side of the substrate (e.g., formed on the outermost
portion) to be formed to have a step difference by including the
first metallic DAM 410, so that a profile lowers (e.g., a profile
of the DAM is reduced), and consequently, the S/D residual layer
does not remain and thus a defect generation by Ti tip may be
suitably or advantageously prevented or reduced.
[0092] Furthermore, since the DAM includes the first interlayer
insulating layer 230 including an inorganic layer, extension of the
thin film encapsulation inorganic layer 310 is possible, and
consequently, a dead space may be suitably or advantageously
reduced.
[0093] For example, a DAM structure such as a metallic DAM is
generally formed by using an inorganic layer without a structure
such as the first metallic DAM disclosed by the present exemplary
embodiment, and an organic layer VIA layer covers the inorganic
layer DAM in order to control a Ti tip defect.
[0094] Accordingly, when the inorganic layer DAM and the organic
layer VIA layer that covers the same form a DAM, but do not include
the first metallic DAM, and a separation between the organic layer
VIA layer and the thin film encapsulation inorganic layer is
required, it is difficult to extend the thin film encapsulation
inorganic layer.
[0095] For example, when the thin film encapsulation inorganic
layer cannot be extended and the DAM should be spaced apart by a
set or predetermined interval, a dead space is extended.
[0096] On the other hand, in the organic light-emitting display
device according to the present exemplary embodiment, the DAM
includes the first metallic DAM 410 and includes the first
interlayer insulating layer 230 that covers the first metallic DAM
410 and includes an inorganic material, so that not only the
lateral structure is strengthened by the first metallic DAM 410 but
also thin film encapsulation inorganic layer 310 may be suitably or
advantageously extended up to side of the substrate (e.g., the
outermost portion of the substrate).
[0097] The first metallic DAM 410 according to the present
exemplary embodiment may be formed in a layer where the driving
gate electrode G of the driving TFT (refer to FIG. 2) is formed as
illustrated in FIG. 1. For example, in manufacturing the organic
light-emitting display device according to the present exemplary
embodiment, the first metallic DAM 410 and the driving gate
electrode G may be concurrently or simultaneously formed.
[0098] FIG. 4 is a schematic cross-sectional view illustrating an
organic light-emitting display device according to an exemplary
embodiment. In FIG. 4, like reference numerals used for FIGS. 1 to
3 represent like members, and duplicated descriptions of the like
members are not provided for conciseness of description herein.
[0099] In the organic light-emitting display device according to
the present exemplary embodiment, the driving gate electrode G of
the driving TFT may be coupled or connected with a first electrode
C1 of a storage capacitor Cst. In more detail, the driving gate
electrode G is integrally formed in a layer where the first
electrode C1 is formed. For example, the storage capacitor may
include the first electrode coupled with the driving gate
electrode.
[0100] Also, a second electrode C2 of the storage capacitor Cst is
disposed such that at least a portion of the second electrode C2
overlaps the first electrode C1, and the second electrode C2 may be
formed in a layer where a driving voltage line is formed. For
example, the storage capacitor may include the second electrode on
an upper portion of the first electrode and insulated from the
first electrode.
[0101] In the case where a distance between wirings disposed to
overlap such as the first electrode C1 and the second electrode C2
is close, parasitic capacitance between the wirings may occur, and
an interference phenomenon between transferred signals may occur
due to the wirings (e.g., due to the proximity of the wirings to
each other). To reduce this parasitic capacitance and/or a signal
interference phenomenon, the present exemplary embodiment may
include a second interlayer insulating layer 231. As shown in FIG.
4, the stack 200 may include the gate insulating layer 210, the
first interlayer insulating layer 230, the second interlayer
insulating layer 231, and the via layer 250.
[0102] The second interlayer insulating layer 231 is disposed on
the first interlayer insulating layer 230 and includes an opening
that exposes a portion of the first interlayer insulating layer
230. The second electrode C2 of the storage capacitor Cst is
disposed in the opening.
[0103] For example, the organic light-emitting display device
according to the present exemplary embodiment may include the
substrate 100, the TFT provided to the substrate 100, the storage
capacitor Cst, the first interlayer insulating layer 230, the
second interlayer insulating layer 231, and the DAM formed on the
outermost portion of the substrate 100.
[0104] As described above, the second interlayer insulating layer
231 may be additionally disposed between these wirings and/or the
wiring and the TFT to reduce a value of parasitic capacitance
and/or signal interference. Meanwhile, there is a portion between
the first electrode C1 and the second electrode C2 of the storage
capacitor Cst where the second interlayer insulating layer 231 is
not disposed, so that the storage capacitor Cst may maintain high
storage capacity.
[0105] The first interlayer insulating layer 230 is intended for
securing high storage capacity of the storage capacitor Cst. In the
organic light-emitting display device according to the present
exemplary embodiment, the first interlayer insulating layer 230 may
suitably or advantageously include an inorganic material having a
high dielectric constant as described above. Also, the second
interlayer insulating layer 231 may also include an inorganic
material.
[0106] In the organic light-emitting display device according to
the present exemplary embodiment, since the first metallic DAM 410
may be formed in a layer where the driving gate electrode G of the
driving TFT is formed, and since the driving gate electrode G may
be integrally formed in a layer where the first electrode C1 is
formed, the first metallic DAM 410 may be formed in a layer where
the driving gate electrode G and the first electrode C1 are
formed.
[0107] FIG. 5 is a schematic cross-sectional view illustrating an
organic light-emitting display device according to an exemplary
embodiment. In FIG. 5, like reference numerals used for FIGS. 1 to
4 represent like members, and duplicated descriptions of the like
members are not provided for conciseness of description herein.
[0108] As illustrated in FIG. 5, in the organic light-emitting
display device according to the present exemplary embodiment, the
DAM may further include a second metallic DAM 430 formed on an
upper portion of the first metallic DAM 410.
[0109] In the organic light-emitting display device according to
the present exemplary embodiment, since the DAM disposed on the
outermost portion of the substrate 100 doubly includes the metallic
layer having stiffness, the lateral structure is suitably or
advantageously strengthened against damage.
[0110] Like the first metallic DAM 410, the second metallic DAM 430
may include two or more metals (e.g., two or more metal layers)
spaced apart by a set or predetermined interval. Though FIG. 5
illustrates an exemplary embodiment where the first metallic DAM
410 and the second metallic DAM 430 respectively include three
metals (e.g., three metal layers) spaced apart by a set or
predetermined interval, the first metallic DAM 410 and the second
metallic DAM 430 are not limited thereto, of course.
[0111] The DAM of the organic light-emitting display device
according to the present exemplary embodiment may include the first
metallic DAM 410, the first interlayer insulating layer 230 that
covers the first metallic DAM 410 and includes an inorganic
material, the second metallic DAM 430 formed on the upper portion
of the first interlayer insulating layer 230, and the second
interlayer insulating layer 231 that covers the second metallic DAM
430 and includes an inorganic material.
[0112] Also, like the above-described exemplary embodiments, the
DAM may include the thin film encapsulation inorganic layer 310
disposed on the upper portion of the second interlayer insulating
layer 231 and extending up to the outermost portion of the
substrate 100.
[0113] This is because the first interlayer insulating layer 230
and the second interlayer insulating layer 231 include an inorganic
material, and thus, the thin film encapsulation inorganic layer 310
may extend without separation, and consequently, a dead space may
be suitably or advantageously reduced.
[0114] In the organic light-emitting display device according to
the present exemplary embodiment, the driving gate electrode G of
the driving TFT may be coupled or connected with the first
electrode C1 of the storage capacitor Cst. In more detail, the
driving gate electrode G may be integrally provided to a layer
where the first electrode C1 is formed.
[0115] Also, the second electrode C2 of the storage capacitor Cst
may be disposed such that at least a portion of the second
electrode C2 overlaps the first electrode C1, and the second
interlayer insulating layer 231 may include an opening that exposes
a portion of the first interlayer insulating layer 230, and the
second electrode C2 may be disposed in the opening.
[0116] In the organic light-emitting display device according to
the present exemplary embodiment, the first metallic DAM 410 may be
formed in a layer where the driving gate electrode G of the driving
TFT and the first electrode C1 are formed. For example, the first
metallic DAM 410 may be concurrently or simultaneously formed when
the driving gate electrode G and the first electrode C1 are
integrally formed.
[0117] Also, the second metallic DAM 430 may be formed in a layer
where the second electrode C2 of the storage capacitor Cst is
formed. For example, the second metallic DAM 430 and the second
electrode C2 may be concurrently or simultaneously formed, and
after the second metallic DAM 430 and the second electrode C2 are
formed, the second interlayer insulating layer 231 that covers
these features may be formed thereon.
[0118] Since the DAM of the organic light-emitting display device
according to the present exemplary embodiment includes the first
metallic DAM 410 and the second metallic DAM 430, a step difference
may be formed at the first interlayer insulating layer 230, the
second interlayer insulating layer 231, and the thin film
encapsulation inorganic layer 310. Accordingly, Ti tip may be
suitably or advantageously controlled.
[0119] Ti tip is a problem caused by a crack DAM (e.g., a cracked
DAM) including an inorganic layer. Since a profile of the crack DAM
that includes an inorganic layer, but does not include the first
metallic DAM, is formed to have an angle of 80-90 degrees (e.g., an
angle of 80 to 90 degrees relative to the upper surface of the
substrate), when etching is performed after a layer is formed
during a process of forming S/D (e.g., source/drain), a residual
layer of S/D remains.
[0120] At this point, there is a probability that a Ti component of
an S/D residual layer is separated and moves into a display region
during a subsequent process, and a defective display device may be
caused by this Ti component of the S/D residual layer. For example,
Ti tip caused by a DAM that includes an inorganic layer but does
not include the first metallic DAM may result in a defective
display device as a result of Ti contaminating the display region
of the display device.
[0121] To solve this problem, an organic light-emitting display
device according to the present exemplary embodiment allows a DAM
at the side of the substrate (e.g., formed on the outermost
portion) to be formed to have a step difference by including the
first metallic DAM 410, so that a profile lowers (e.g., a profile
of the DAM is reduced), and consequently, the S/D residual layer
does not remain and thus a defect generation by Ti tip may be
suitably or advantageously prevented or reduced.
[0122] FIG. 6 is a schematic cross-sectional view illustrating an
organic light-emitting display device according to an exemplary
embodiment. In FIG. 6, like reference numerals used for FIGS. 1 to
5 represent like members, and duplicated descriptions of the like
members are not provided for conciseness of description herein.
[0123] As illustrated in FIG. 6, in the organic light-emitting
display device according to the present exemplary embodiment, a DAM
may include the first metallic DAM 410, the second metallic DAM 430
formed on the upper portion of the first metallic DAM 410, and may
further include a third metallic DAM 450 formed on an upper portion
of the second metallic DAM 430.
[0124] In the organic light-emitting display device according to
the present exemplary embodiment, since the DAM at a side of the
substrate 100 (e.g., disposed on the outermost portion of the
substrate 100) triply includes metal layers having stiffness, the
lateral structure is suitably or advantageously strengthened
against damage.
[0125] Like the first metallic DAM 410 and the second metallic DAM
430, the third metallic DAM 450 may include two or more metals
(e.g., two or more metal layers) spaced apart by a set or
predetermined interval. Though FIG. 6 illustrates an exemplary
embodiment where the first metallic DAM 410, the second metallic
DAM 430, and the third metallic DAM 450 respectively include three
metals (e.g., three metal layers) spaced apart by a set or
predetermined interval, the DAM is not limited thereto, of
course.
[0126] The DAM of the organic light-emitting display device
according to the present exemplary embodiment may include the first
metallic DAM 410, the first interlayer insulating layer 230 that
covers the first metallic DAM 410 and includes an inorganic
material, the second metallic DAM 430 formed on the upper portion
of the first interlayer insulating layer 230, the second interlayer
insulating layer 231 that covers the second metallic DAM 430 and
includes an inorganic material, the third metallic DAM 450 formed
on the upper portion of the second interlayer insulating layer 231,
and the thin film encapsulation inorganic layer 310 that extends up
to the side of the substrate 100 (e.g., the outermost portion of
the substrate 100) to cover the third metallic DAM 450.
[0127] Since the first interlayer insulating layer 230 and the
second interlayer insulating layer 231 respectively include an
inorganic material, the thin film encapsulation inorganic layer 310
may extend up to the DAM without separation, and consequently, a
dead space may be suitably or advantageously reduced.
[0128] In the organic light-emitting display device according to
the present exemplary embodiment, the driving gate electrode G of
the driving TFT may be coupled or connected with the first
electrode C1 of the storage capacitor Cst. In more detail, the
driving gate electrode G may be integrally provided to a layer
where the first electrode C1 is formed.
[0129] The second electrode C2 of the storage capacitor Cst may be
disposed such that at least a portion of the second electrode C2
overlaps the first electrode C1, and the second interlayer
insulating layer 231 may include an opening that exposes a portion
of the first interlayer insulating layer 230, and the second
electrode C2 may be disposed in the opening.
[0130] Also, a source electrode S, a drain electrode D, and a data
line may be provided to the upper portion of the second interlayer
insulating layer 231.
[0131] In the organic light-emitting display device according to
the present exemplary embodiment, the first metallic DAM 410 may be
formed in a layer where the driving gate electrode G of the driving
TFT and the first electrode C1 of the storage capacitor Cst
integrally formed with the driving gate electrode G are formed. The
second metallic DAM 430 may be formed in a layer where the second
electrode C2 of the storage capacitor Cst is formed.
[0132] Also, the third metallic DAM 450 may be formed in a layer
where the data line is formed.
[0133] As used herein, the term "substantially," "about," and
similar terms are used as terms of approximation and not as terms
of degree, and are intended to account for the inherent deviations
in measured or calculated values that would be recognized by those
of ordinary skill in the art. Further, the use of "may" when
describing embodiments of the present invention refers to "one or
more embodiments of the present invention." As used herein, the
terms "use," "using," and "used" may be considered synonymous with
the terms "utilize," "utilizing," and "utilized," respectively.
Also, the term "exemplary" is intended to refer to an example or
illustration.
[0134] Spatially relative terms, such as "beneath," "below,"
"lower," "under," "above," "upper," and the like, may be used
herein for ease of explanation to describe one element or feature's
relationship to another element(s) or feature(s) as illustrated in
the figures. It will be understood that the spatially relative
terms are intended to encompass different orientations of the
device in use or in operation, in addition to the orientation
depicted in the figures. For example, if the device in the figures
is turned over, elements described as "below" or "beneath" or
"under" other elements or features would then be oriented "above"
the other elements or features. Thus, the example terms "below" and
"under" can encompass both an orientation of above and below. The
device may be otherwise oriented (e.g., rotated 90 degrees or at
other orientations) and the spatially relative descriptors used
herein should be interpreted accordingly.
[0135] While one or more exemplary embodiments have been described
with reference to the figures, it will be understood by those of
ordinary skill in the art that various changes in form and details
may be made therein without departing from the spirit and scope of
the present disclosure as defined by the following claims, and
equivalents thereof.
* * * * *