U.S. patent application number 15/103594 was filed with the patent office on 2016-10-27 for semiconductor device.
This patent application is currently assigned to TOYOTA JIDOSHA KABUSHIKI KAISHA. The applicant listed for this patent is DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHA. Invention is credited to Keita FUKUTANI, Arata HARADA, Takahiro HIRANO, Takuya KADOGUCHI, Masayoshi NISHIHATA, Tomomi OKUMURA.
Application Number | 20160315037 15/103594 |
Document ID | / |
Family ID | 52347359 |
Filed Date | 2016-10-27 |
United States Patent
Application |
20160315037 |
Kind Code |
A1 |
KADOGUCHI; Takuya ; et
al. |
October 27, 2016 |
SEMICONDUCTOR DEVICE
Abstract
A semiconductor device includes a first switching element; a
second switching element; a first metal member; a second metal
member; a first terminal that has a potential on a high potential
side; a second terminal that has a potential on a low potential
side; a third terminal that has a midpoint potential; and a resin
part. A first potential part has potential equal to potential of
the first terminal. A second potential part has potential equal to
potential of the second terminal. A third potential part has
potential equal to potential of the third terminal. A first
creepage distance between the first potential part and the second
potential part is longer than a minimum value of a second creepage
distance between the first potential part and the third potential
part and a third creepage distance between the second potential
part and the third potential part.
Inventors: |
KADOGUCHI; Takuya;
(Toyota-shi, JP) ; HIRANO; Takahiro; (Toyota-shi,
JP) ; HARADA; Arata; (Gamagori-shi, JP) ;
OKUMURA; Tomomi; (Chiryu-shi, JP) ; FUKUTANI;
Keita; (Anjo-shi, JP) ; NISHIHATA; Masayoshi;
(Nagoya-shi, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
TOYOTA JIDOSHA KABUSHIKI KAISHA
DENSO CORPORATION |
Toyota-shi, Aichi-ken
Kariya-shi, Aichi-ken |
|
JP
JP |
|
|
Assignee: |
TOYOTA JIDOSHA KABUSHIKI
KAISHA
Toyota-shi, Aichi-ken
JP
DENSO CORPORATION
Kariya-shi, Aichi-ken
JP
|
Family ID: |
52347359 |
Appl. No.: |
15/103594 |
Filed: |
December 9, 2014 |
PCT Filed: |
December 9, 2014 |
PCT NO: |
PCT/IB2014/002704 |
371 Date: |
June 10, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 23/49568 20130101;
H01L 29/861 20130101; H01L 23/3107 20130101; H01L 29/7395 20130101;
H01L 2924/13055 20130101; H01L 2924/181 20130101; H01L 23/49575
20130101; H01L 2924/13091 20130101; H01L 23/051 20130101; H01L
23/49562 20130101; H01L 2924/13055 20130101; H01L 2924/181
20130101; H01L 2924/13091 20130101; H02M 7/003 20130101; H01L
23/4334 20130101; H01L 24/33 20130101; H01L 23/49513 20130101; H01L
23/3114 20130101; H01L 2924/00 20130101; H01L 2924/00012 20130101;
H01L 2924/00 20130101 |
International
Class: |
H01L 23/495 20060101
H01L023/495; H02M 7/00 20060101 H02M007/00; H01L 29/861 20060101
H01L029/861; H01L 23/31 20060101 H01L023/31; H01L 29/739 20060101
H01L029/739 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 11, 2013 |
JP |
2013-256494 |
Claims
1-7. (canceled)
8. A semiconductor device comprising: a first switching element
that includes a first electrode and a second electrode and
constitutes an upper arm of upper and lower arms, the first
electrode and the second electrode of the first switching element
respectively constituting both sides of the first switching element
in a first direction; a second switching element that is aligned
with the first switching element in a second direction, includes a
first electrode and a second electrode, and constitutes the lower
arm of the upper and lower arms, the first electrode and the second
electrode of the second switching element respectively constituting
both sides of the second switching element in the first direction;
a first metal member that is electrically connected with the first
electrode of the first switching element in the first direction; a
second metal member that is electrically connected with the first
electrode of the second switching element in the first direction; a
first terminal that has a potential on a high potential side of the
upper and lower arms; a second terminal that has a potential on a
low potential side of the upper and lower arms; a third terminal
that has a midpoint potential of the upper and lower arms; and a
resin part that integrally covers the first switching element, the
second switching element, at least a part of the first metal
member, at least a part of the second metal member, a part of the
first terminal, a part of the second terminal, and a part of the
third terminal, wherein when a part that has potential equal to a
potential of the first terminal is assumed as a first potential
part, a part that has potential equal to a potential of the second
terminal is assumed as a second potential part, and a part that has
potential equal to a potential of the third terminal is assumed as
a third potential part, a first creepage distance between the first
potential part and the second potential part along a surface of the
resin part is longer than a minimum value of a second creepage
distance between the first potential part and the third potential
part along the surface of the resin part and a third creepage
distance between the second potential part and the third potential
part along the surface of the resin part, and the first direction
is orthogonal with respect to the second direction.
9. The semiconductor device according to claim 8, wherein the
second terminal is located between the first terminal and the third
terminal, and the first terminal, the second terminal and the third
terminal extend on one side of the resin part.
10. The semiconductor device according to claim 9, wherein the
first terminal, the second terminal and the third terminal are
aligned with each other in the second direction while extending in
a third direction orthogonal to both the first direction and the
second direction, and the second terminal extends in the third
direction from a position between the first metal member and the
second metal member in the second direction.
11. The semiconductor device according to claim 8, wherein the
first metal member includes a first surface exposed from the resin
part and a second surface that is an opposite surface of the first
surface of the first metal member and faces the first electrode of
the first switching element in the first direction, the first
surface of the first metal member forms the first potential part
together with the first terminal, the second metal member includes
a first surface exposed from the resin part and a second surface
that is an opposite surface of the first surface of the second
metal member and faces the first electrode of the second switching
element in the first direction, and the first surface of the second
metal member forms the third potential part together with the third
terminal.
12. The semiconductor device according to claim 11 further
comprising: a third metal member that is electrically connected
with the second electrode of the first switching element, the
second electrode of the first switching element being opposite to
the first electrode of the first switching element in the first
direction; and a fourth metal member that is electrically connected
with the second electrode of the second switching element, the
second electrode of the second switching element being opposite to
the first electrode of the second switching element in the first
direction, wherein the third metal member includes a first surface
exposed from the resin part and a second surface that is an
opposite surface of the first surface of the third metal member and
faces the second electrode of the first switching element in the
first direction, the first surface of the third metal member forms
the third potential part together with the third terminal and a
surface of the second metal member, the fourth metal member
includes a first surface exposed from the resin part and a second
surface that is an opposite surface of the first surface of the
fourth metal member and faces the second electrode of the second
switching element in the first direction, and the first surface of
the fourth metal member forms the second potential part together
with the second terminal.
13. A semiconductor device comprising: a first switching element
that includes a first electrode and a second electrode and
constitutes an upper arm of upper and lower arms, the first
electrode and the second electrode of the first switching element
respectively constituting both sides of the first switching element
in a first direction; a second switching element that is aligned
with the first switching element in a second direction, includes a
first electrode and a second electrode, and constitutes the lower
arm of the upper and lower arms, the first electrode and the second
electrode of the second switching element respectively constituting
both sides of the second switching element in the first direction;
a first metal member that is electrically connected with the first
electrode of the first switching element in the first direction; a
second metal member that is electrically connected with the first
electrode of the second switching element in the first direction; a
first terminal that has a potential on a high potential side of the
upper and lower arms; a second terminal that has a potential on a
low potential side of the upper and lower arms; a third terminal
that has a midpoint potential of the upper and lower arms; and a
resin part that integrally covers the first switching element, the
second switching element, at least a part of the first metal
member, at least a part of the second metal member, a part of the
first terminal, a part of the second terminal, and a part of the
third terminal, wherein when a part that has potential equal to a
potential of the first terminal is assumed as a first potential
part, a part that has potential equal to a potential of the second
terminal is assumed as a second potential part, and a part that has
potential equal to a potential of the third terminal is assumed as
a third potential part, a comparative tracking index of a first
material that is provided between the first potential part and the
second potential part in the resin part is higher than at least one
of comparative tracking indexes of a second material and a third
material, the second material being provided between the first
potential part and the third potential part in the resin part, and
the third material being provided between the second potential part
and the third potential part in the resin part, when a minimum
value of creepage distances between the first potential part and
the second potential part in the resin part is set to L.sub.1, a
minimum creepage distance that is permitted to the first material
between the first potential part and the second potential part is
set to L.sub.1min, a minimum value of the creepage distances
between the first potential part and the third potential part in
the resin part is set to L.sub.2, the minimum creepage distance
that is permitted to the second material between the first
potential part and the third potential part is set to L.sub.2min,
the minimum value of the creepage distance between the second
potential part and the third potential part along the surface of
the resin part is set to L.sub.3, and the minimum creepage distance
that is permitted to the third material between the second
potential part and the third potential part is set to L.sub.3min,
at least any one of the following two formulas is satisfied,
(L.sub.2-L.sub.2min)/L.sub.2min<(L.sub.1-L.sub.1 min)/L.sub.1min
(L.sub.3-L.sub.3min)/L.sub.3min<(L.sub.1-L.sub.1
min)/L.sub.1min, and the first direction is orthogonal with respect
to the second direction.
14. The semiconductor device according to claim 13, wherein the
second terminal is located between the first terminal and the third
terminal, and the first terminal, the second terminal and the third
terminal extend on one side of the resin part.
15. The semiconductor device according to claim 14, wherein the
first terminal, the second terminal and the third terminal are
aligned with each other in the second direction while extending in
a third direction orthogonal to both the first direction and the
second direction, and the second terminal extends in the third
direction from a position between the first metal member and the
second metal member in the second direction.
16. The semiconductor device according to claim 13, wherein the
first metal member includes a first surface exposed from the resin
part and a second surface that is an opposite surface of the first
surface of the first metal member and faces the first electrode of
the first switching element in the first direction, the first
surface of the first metal member forms the first potential part
together with the first terminal, the second metal member includes
a first surface exposed from the resin part and a second surface
that is an opposite surface of the first surface of the second
metal member and faces the first electrode of the second switching
element in the first direction, and the first surface of the second
metal member forms the third potential part together with the third
terminal.
17. The semiconductor device according to claim 16 further
comprising: a third metal member that is electrically connected
with the second electrode of the first switching element, the
second electrode of the first switching element being opposite to
the first electrode of the first switching element in the first
direction; and a fourth metal member that is electrically connected
with the second electrode of the second switching element, the
second electrode of the second switching element being opposite to
the first electrode of the second switching element in the first
direction, wherein the third metal member includes a first surface
exposed from the resin part and a second surface that is an
opposite surface of the first surface of the third metal member and
faces the second electrode of the first switching element in the
first direction, the first surface of the third metal member forms
the third potential part together with the third terminal and a
surface of the second metal member, the fourth metal member
includes a first surface exposed from the resin part and a second
surface that is an opposite surface of the first surface of the
fourth metal member and faces the second electrode of the second
switching element in the first direction, and the first surface of
the fourth metal member forms the second potential part together
with the second terminal.
18. A semiconductor device comprising: a first switching element
that includes a first electrode and a second electrode and
constitutes an upper arm of upper and lower arms, the first
electrode and the second electrode of the first switching element
respectively constituting both sides of the first switching element
in a first direction; a second switching element that is aligned
with the first switching element in a second direction, includes a
first electrode and a second electrode, and constitutes the lower
arm of the upper and lower arms, the first electrode and the second
electrode of the second switching element respectively constituting
both sides of the second switching element in the first direction;
a first metal member that is electrically connected with the first
electrode of the first switching element in the first direction; a
second metal member that is electrically connected with the first
electrode of the second switching element in the first direction; a
first terminal that has a potential on a high potential side of the
upper and lower arms; a second terminal that has a potential on a
low potential side of the upper and lower arms; a third terminal
that has a midpoint potential of the upper and lower arms; and a
resin part that integrally covers the first switching element, the
second switching element, at least a part of the first metal
member, at least a part of the second metal member, a part of the
first terminal, a part of the second terminal, and a part of the
third terminal, wherein when a part that has potential equal to a
potential of the first terminal is assumed as a first potential
part, a part that has potential equal to a potential of the second
terminal is assumed as a second potential part, and a part that has
potential equal to a potential of the third terminal is assumed as
a third potential part, a first spatial distance between the first
potential part and the second potential part is longer than a
minimum value of a second spatial distance between the first
potential part and the third potential part and a third spatial
distance between the second potential part and the third potential
part, and the first direction is orthogonal with respect to the
second direction.
19. The semiconductor device according to claim 18, wherein the
second terminal is located between the first terminal and the third
terminal, and the first terminal, the second terminal and the third
terminal extend on one side of the resin part.
20. The semiconductor device according to claim 19, wherein the
first terminal, the second terminal and the third terminal are
aligned with each other in the second direction while extending in
a third direction orthogonal to both the first direction and the
second direction, and the second terminal extends in the third
direction from a position between the first metal member and the
second metal member in the second direction.
21. The semiconductor device according to claim 18, wherein the
first metal member includes a first surface exposed from the resin
part and a second surface that is an opposite surface of the first
surface of the first metal member and faces the first electrode of
the first switching element in the first direction, the first
surface of the first metal member forms the first potential part
together with the first terminal, the second metal member includes
a first surface exposed from the resin part and a second surface
that is an opposite surface of the first surface of the second
metal member and faces the first electrode of the second switching
element in the first direction, and the first surface of the second
metal member forms the third potential part together with the third
terminal.
22. The semiconductor device according to claim 21 further
comprising: a third metal member that is electrically connected
with the second electrode of the first switching element, the
second electrode of the first switching element being opposite to
the first electrode of the first switching element in the first
direction; and a fourth metal member that is electrically connected
with the second electrode of the second switching element, the
second electrode of the second switching element being opposite to
the first electrode of the second switching element in the first
direction, wherein the third metal member includes a first surface
exposed from the resin part and a second surface that is an
opposite surface of the first surface of the third metal member and
faces the second electrode of the first switching element in the
first direction, the first surface of the third metal member forms
the third potential part together with the third terminal and a
surface of the second metal member, the fourth metal member
includes a first surface exposed from the resin part and a second
surface that is an opposite surface of the first surface of the
fourth metal member and faces the second electrode of the second
switching element in the first direction, and the first surface of
the fourth metal member forms the second potential part together
with the second terminal.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a semiconductor device.
[0003] 2. Description of Related Art
[0004] There has been known a semiconductor device that includes
first to fourth thick plate parts and first and second thin plate
parts, in which the first thin plate part and the second thin plate
part are fastened and connected electrically with each other (for
example, see Japanese Patent Application Publication No.
2012-235081 (JP 2012-235081 A)). In JP 2012-235081 A, the first
thick plate part is connected electrically with an electrode on a
lower surface side of a first semiconductor, element. Further, the
second thick plate part is connected with an electrode on a lower
surface side of a second semiconductor element disposed in parallel
with the first semiconductor element. Further, the third thick
plate part is connected with an electrode on an upper surface side
of the first semiconductor element. Further, the fourth thick plate
part is connected with an electrode on an upper surface side of the
second semiconductor element. Further, the first thin plate part is
disposed on the second thick plate part. Then, the second thin
plate part is disposed on the third thick plate part.
[0005] Now, in this kind of the semiconductor device, the
semiconductor elements and the like are sealed with a resin.
Terminals exposed from a resin part include a first terminal that
has a potential on a high potential side of upper and lower arms, a
second terminal that has a potential on a low potential side of the
upper and lower arms, and a third terminal that has a mid-point
potential of the upper and lower arms. In such a configuration, it
is useful to prevent short-circuiting from occurring between a site
that has a potential of a high potential side (first terminal, for
example) and a site that has a potential of a low potential side
(second terminal, for example).
SUMMARY OF THE INVENTION
[0006] The present invention intends to provide a semiconductor
device that can reduce likelihood of short-circuiting between a
site that has a potential of a high potential side and a site that
has a potential of a low potential side.
[0007] A semiconductor device according to a first aspect of the
present invention includes: a first switching element that includes
a first electrode and a second electrode and constitutes an upper
arm of upper and lower arms, the first electrode and the second
electrode of the first switching element respectively constituting
both sides of the first switching element in a first direction; a
second switching element that is aligned with the first switching
element in a second direction, includes a first electrode and a
second electrode, and constitutes the lower arm of the upper and
lower arms, the first electrode and the second electrode of the
second switching element respectively constituting both sides of
the second switching element in the first direction; a first metal
member that is electrically connected with the first electrode of
the first switching element in the first direction; a second metal
member that is electrically connected with the first electrode of
the second switching element in the first direction; a first
terminal that has a potential on a high potential side of the upper
and lower arms; a second terminal that has a potential on a low
potential side of the upper and lower arms; a third terminal that
has a midpoint potential of the upper and lower arms; and a resin
part that integrally covers the first switching element, the second
switching element, at least a part of the first metal member, at
least a part of the second metal member, a part of the first
terminal, a part of the second terminal, and a part of the third
terminal. When a part that has potential equal to a potential of
the first terminal is assumed as a first potential part, a part
that has potential equal to a potential of the second terminal is
assumed as a second potential part, and a part that has potential
equal to a potential of the third terminal is assumed as a third
potential part, a first creepage distance between the first
potential part and the second potential part along a surface of the
resin part is longer than a minimum value of a second creepage
distance between the first potential part and the third potential
part along the surface of the resin part and a third creepage
distance between the second potential part and the third potential
part along the surface of the resin part. The first direction is
orthogonal with respect to the second direction.
[0008] A semiconductor device according to a second aspect of the
present invention includes: a first switching element that includes
a first electrode and a second electrode and constitutes an upper
arm of upper and lower arms, the first electrode and the second
electrode of the first switching element respectively constituting
both sides of the first switching element in a first direction; a
second switching element that is aligned with the first switching
element in a second direction, includes a first electrode and a
second electrode, and constitutes the lower arm of the upper and
lower arms, the first electrode and the second electrode of the
second switching element respectively constituting both sides of
the second switching element in the first direction; a first metal
member that is electrically connected with the first electrode of
the first switching element in the first direction; a second metal
member that is electrically connected with the first electrode of
the second switching element in the first direction; a first
terminal that has a potential on a high potential side of the upper
and lower arms; a second terminal that has a potential on a low
potential side of the upper and lower arms; a third terminal that
has a midpoint potential of the upper and lower arms; and a resin
part that integrally covers the first switching element, the second
switching element, at least a part of the first metal member, at
least a part of the second metal member, a part of the first
terminal, a part of the second terminal, and a part of the third
terminal. When a part that has potential equal to a potential of
the first terminal is assumed as a first potential part, a part
that has potential equal to a potential of the second terminal is
assumed as a second potential part, and a part that has potential
equal to a potential of the third terminal is assumed as a third
potential part, a comparative tracking index of a first material
that is provided between the first potential part and the second
potential part in the resin part is higher than at least one of
comparative tracking indexes of a second material and a third
material, the second material being provided between the first
potential part and the third potential part in the resin part, and
the third material being provided between the second potential part
and the third potential part in the resin part. When a minimum
value of creepage distances between the first potential part and
the second potential part in the resin part is set to L.sub.1, a
minimum creepage distance that is permitted to the first material
between the first potential part and the second potential part is
set to L.sub.1min, a minimum value of the creepage distances
between the first potential part and the third potential part in
the resin part is set to L.sub.2, the minimum creepage distance
that is permitted to the second material between the first
potential part and the third potential part is set to L.sub.2min,
the minimum value of the creepage distance between the second
potential part and the third potential part along the surface of
the resin part is set to L.sub.3, and the minimum creepage distance
that is permitted to the third material between the second
potential part and the third potential part is set to L.sub.3min,
at least any one of the following two formulas is satisfied.
(L.sub.2-L.sub.2min)/L.sub.2min<(L.sub.1-L.sub.1
min)/L.sub.1min
(L.sub.3-L.sub.3min)/L.sub.3min<(L.sub.1-L.sub.1
min)/L.sub.1min
The first direction is orthogonal with respect to the second
direction.
[0009] A semiconductor device according to a third aspect of the
present invention includes: a first switching element that includes
a first electrode and a second electrode and constitutes an upper
arm of upper and lower arms, the first electrode and the second
electrode of the first switching element respectively constituting
both sides of the first switching element in a first direction; a
second switching element that is aligned with the first switching
element in a second direction, includes a first electrode and a
second electrode, and constitutes the lower arm of the upper and
lower arms, the first electrode and the second electrode of the
second switching element respectively constituting both sides of
the second switching element in the first direction; a first metal
member that is electrically connected with the first electrode of
the first switching element in the first direction; a second metal
member that is electrically connected with the first electrode of
the second switching element in the first direction; a first
terminal that has a potential on a high potential side of the upper
and lower arms; a second terminal that has a potential on a low
potential side of the upper and lower arms; a third terminal that
has a midpoint potential of the upper and lower arms; and a resin
part that integrally covers the first switching element, the second
switching element, at least a part of the first metal member, at
least a part of the second metal member, a part of the first
terminal, a part of the second terminal, and a part of the third
terminal. When a part that has potential equal to a potential of
the first terminal is assumed as a first potential part, a part
that has potential equal to a potential of the second terminal is
assumed as a second potential part, and a part that has potential
equal to a potential of the third terminal is assumed as a third
potential part, a first spatial distance between the first
potential part and the second potential part is longer than a
minimum value of a second spatial distance between the first
potential part and the third potential part and a third spatial
distance between the second potential part and the third potential
part. The first direction is orthogonal with respect to the second
direction.
[0010] According to the first, second and third aspects of the
present invention, a semiconductor device that can reduce the
likelihood of short-circuiting between a site that has a potential
of a high potential side and a site that has a potential of a low
potential side can be obtained.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] Features, advantages, and technical and industrial
significance of exemplary embodiments of the invention will be
described below with reference to the accompanying drawings, in
which like numerals denote like elements, and wherein:
[0012] FIG. 1 is a top view that shows a semiconductor device
according to an embodiment (first embodiment);
[0013] FIG. 2 is a diagram obtained by omitting a resin part in the
semiconductor device of FIG. 1;
[0014] FIG. 3 is a cross-sectional view along a line of FIG. 1;
[0015] FIG. 4 is a cross-sectional view along a IV-IV line of FIG.
1;
[0016] FIG. 5 is a diagram that schematically shows a principle of
magnetic flux cancellation between a high potential power terminal
and a low potential power terminal;
[0017] Each of FIG. 6A, FIG. 6B and FIG. 6C is a diagram that shows
a relationship of respective creepage distances in the
semiconductor device of FIG. 1;
[0018] Each of FIG. 7A and FIG. 7B is a diagram that shows a
semiconductor device according to a variant embodiment of the first
embodiment;
[0019] Each of FIG. 8A and FIG. 8B is a diagram that shows a
semiconductor device according to another variant embodiment of the
first embodiment;
[0020] FIG. 9 is a top view that shows a semiconductor device
according to another variant embodiment of the first
embodiment;
[0021] FIG. 10 is a top view that shows a semiconductor device
according to another variant embodiment of the first
embodiment;
[0022] FIG. 11 is a top view that shows a semiconductor device
according to another variant embodiment of the first
embodiment;
[0023] Each of FIG. 12A, FIG. 12B and FIG. 12C is a diagram that
shows a semiconductor device according to another variant
embodiment of the first embodiment;
[0024] Each of FIG. 13A and FIG. 13B is a top view that shows a
semiconductor device according to another variant embodiment of the
first embodiment;
[0025] Each of FIG. 14A and FIG. 14B is a diagram that shows a
semiconductor device according to a second embodiment;
[0026] FIG. 15 is a diagram that shows a semiconductor device
according to another variant example to the second embodiment;
[0027] FIG. 16 is a diagram that shows a semiconductor device
according to a third embodiment; and
[0028] FIG. 17 is a top view that shows a semiconductor device
according to another variant embodiment of the third
embodiment.
DETAILED DESCRIPTION OF EMBODIMENTS
[0029] Hereinafter, with reference to accompanying drawings, each
embodiment will be described in detail.
[0030] FIG. 1 is a top view that shows a semiconductor device 10
according to an embodiment (first embodiment). FIG. 2 is a diagram
obtained by omitting a resin part in the semiconductor device of
FIG. 1. FIG. 3 is a cross-sectional view along a line of FIG. 1.
FIG. 4 is a cross-sectional view along a IV-IV line of FIG. 1.
[0031] The semiconductor device 10 is used typically in a power
conversion device such as an inverter and a converter for driving a
running motor in a hybrid vehicle and an electric vehicle. However,
the semiconductor device 10 may be used in other applications in a
vehicle (for an electric steering device, for example), or may be
used in for different applications than a vehicle (for example, a
power supply unit or the like for other electric device).
[0032] In the following description, for convenience sake, a
thickness direction of an Insulated Gate Bipolar Transistor (IGBT)
element is taken as a Z direction. Further, a direction that is
orthogonal to the Z direction and in which two IGBT elements that
constitute upper and lower arms are arranged is taken as an X
direction. Further, a direction that is orthogonal to both the X
direction and the Z direction is taken as a Y direction. In the
following description, although, for convenience sake, the Z
direction corresponds to a vertical direction and a side in which a
first terminal 60 is present with respect to a first heat sink 50
is taken as an "upper side", and a mounting direction of the
semiconductor device 10 is optional.
[0033] The semiconductor device 10 includes IGBT elements 20 and
30, free wheel diodes (FWDs) 28 and 38, a high potential power
terminal 40, a low potential power terminal 42, an output terminal
44 and a control terminal 46 that contains a gate terminal 46g.
Further, the semiconductor device 10 includes, as shown in FIG. 1
to FIG. 4, four heat sinks 50, 52, 54 and 56, a joint part 58, two
terminals 60 and 62, a solder 64, and a resin part 66.
[0034] The IGBT element 20 and the FWD 28 constitute an upper arm
of the upper and lower arms and the IGBT element 30 and the FWD 38
constitute a lower arm of the upper and lower arms.
[0035] The IGBT element 20 includes, as shown in FIG. 2 and FIG. 3,
a collector electrode 22 on a lower surface side and an emitter
electrode 24 and a gate electrode 26 on an upper surface side.
[0036] On the lower surface side of the IGBT element 20, the first
heat sink 50 is disposed. The collector electrode 22 of the IGBT
element 20 is electrically and mechanically connected with a
surface 50a on an upper side of the first heat sink 50 via the
solder 64. In an embodiment shown in FIG. 2, also a cathode
electrode of the FWD element 28 is connected with the surface 50a
on the upper side of the first heat sink 50.
[0037] As shown in FIG. 2, the first heat sink 50 is a
substantially rectangular metal plate and includes the high
potential power terminal 40 that extends from a side of the
rectangle in the Y direction. The first heat sink 50 may be formed
of a single heteromorphous lead frame together with the high
potential power terminal 40 and the like. Alternatively, the high
potential power terminal 40 may be formed in a separate body from
the first heat sink 50 and attached to the first heat sink 50. The
high potential power terminal 40 is connected electrically with the
IGBT element 20 and the FWD element 28 via the first heat sink 50.
A part of the high potential power terminal 40 is, as shown in FIG.
2, withdrawn externally from a side surface of the resin part 66 (a
side surface having the Y direction as a normal line).
[0038] A surface 50b on a lower side of the first heat sink 50 is,
as shown in FIG. 3 and FIG. 4, exposed from a surface 66a on a
lower side of the resin part 66. Thus, heat generated by the IGBT
element 20 and the FWD element 28 can be externally radiated from
the surface 50b of the first heat sink 50. In an embodiment shown
in FIG. 3, although the surface 50b on the lower side of the first
heat sink 50 is flush with the surface 66a on the lower side of the
resin part 66, the surface 50b may include an offset in the Z
direction with respect to the surface 66a.
[0039] On a top surface side of the IGBT element 20, the first
terminal 60 is disposed such that the first terminal 60 does not
overlap with the gate electrode 26 in the Z direction but faces the
emitter electrode 24. The first terminal 60 is a flat metal plate
(metal block) but may include a bent part. A surface on a lower
side of the first terminal 60 is electrically and mechanically
connected with the emitter electrode 24 of the IGBT element 20 via
the solder 64. To the surface on the lower side of the first
terminal 60, also an anode electrode of the FWD element 28 is
connected. The first terminal 60 has a relay function for
electrically connecting the IGBT element 20 and the FWD element 28
with a second heat sink 52 and a function for securing a height for
performing wire bonding to the gate electrode 26.
[0040] The gate electrode 26 is connected with the gate terminal
46g of the control terminal 46 according to the upper arm via a
bonding wire 48. The control terminal 46 according to the upper arm
may be formed of the single heteromorphous lead frame together with
the first heat sink 50, the high potential power terminal 40 and
the like. The control terminal 46 according to the upper arm may
include, in addition to the gate terminal 46g, a terminal connected
with a temperature measurement diode, a sense emitter and the like.
The control terminal 46 according to the upper arm is, as shown in
FIG. 1 and FIG. 2, externally withdrawn from a side surface (a side
surface having the Y direction as a normal line) on an opposite
side from a withdrawing side of the high potential power terminal
40 in the resin part 66.
[0041] The second heat sink 52 is disposed on a surface on an upper
side of the first terminal 60. A surface 52a on a lower side of the
second heat sink 52 is electrically and mechanically connected with
the surface on the upper side of the first terminal 60 via the
solder 64. Thus, the second heat sink 52 is connected electrically
with the emitter electrode 24 of the IGBT element 20 and the anode
electrode of the FWD element 28 via the first terminal 60.
[0042] The second heat sink 52 is a substantially rectangular metal
plate and is disposed such that an almost entire part overlaps with
the first heat sink 50 in a top view (a downward view in the Z
direction). As shown in FIG. 2, the second heat sink 52 has a
substantially same rectangular shape as an external shape of the
first heat sink 50. A surface 52b on the upper side of the second
heat sink 52 is exposed from a surface 66b on the upper side of the
resin part 66. Thus, the heat generated by the IGBT element 20 and
the FWD element 28 can be externally radiated from the surface 52b
of the second heat sink 52 via the first terminal 60. In the
embodiment shown in FIG. 3 and FIG. 4, although the surface 52b on
the upper side of the second heat sink 52 is flush with the surface
66b on the upper side of the resin part 66, the surface 52b may
include an offset with respect to the surface 66b in the Z
direction.
[0043] In the second heat sink 52, a first joint part 58a that is
one element of the joint part 58 is integrally disposed. However,
the first joint part 58a may be formed in a separate body from the
second heat sink 52 and attached to the second heat sink 52. The
first joint part 58a extends toward the IGBT element 30 in the X
direction.
[0044] The IGBT element 30 includes, as shown in FIG. 2 and FIG. 3,
a collector electrode 32 on a lower surface side and an emitter
electrode 34 and a gate electrode 36 on an upper surface side. The
IGBT element 30 is aligned with the IGBT element 20 in the X
direction. In the embodiment shown in FIG. 3, although the IGBT
element 30 is disposed in a relationship that the IGBT element 30
is not offset with respect to the IGBT element 20 in the Y
direction, it may have an offset in the Y direction.
[0045] On a lower surface side of the IGBT element 30, a third heat
sink 54 is disposed. The collector electrode 32 of the IGBT element
30 is electrically and mechanically connected with a surface 54a on
an upper side of the third heat sink 54 via the solder 64. In the
embodiment shown in FIG. 2, also a cathode electrode of the FWD
element 38 is connected with the surface 54a on the upper side of
the third heat sink 54.
[0046] The third heat sink 54 is, as shown in FIG. 2, a
substantially rectangular metal plate and provided with the output
terminal 44 that extends from one side of the rectangle in the Y
direction. The third heat sink 54 may be formed of a single
heteromorphous lead frame together with the output terminal 44 and
the like. Alternatively, the output terminal 44 may be formed in a
separate body from the third heat sink 54 and attached to the third
heat sink 54. Thus, the output terminal 44 is connected
electrically with the IGBT element 30 and the FWD element 38 via
the third heat sink 54. A part of the output terminal 44 is, as
shown in FIG. 2, withdrawn externally from a side surface of the
resin part 66 (a side surface having the Y direction as the normal
line). The side surface of the resin part 66 from which the output
terminal 44 is withdrawn is the same as the side surface of the
resin part 66 from which the high potential power terminal 40 is
withdrawn.
[0047] A surface 54b on a lower side of the third heat sink 54 is,
as shown in FIG. 3 and FIG. 4, exposed from the surface 66a on the
lower side of the resin part 66. Thus, the heat generated by the
IGBT element 30 and the FWD element 38 can be externally radiated
from the surface 54b of the third heat sink 54. In the embodiment
shown in FIG. 3 and FIG. 4, although the surface 54b on the lower
side of the third heat sink 54 is flush with the surface 66a on the
lower side of the resin part 66, the surface 54b may have an offset
with respect to the surface 66a in the Z direction.
[0048] In the third heat sink 54, a second joint part 58b that is
one element of the joint part 58 is integrally disposed. However,
the second joint part 58bmay be formed in a separate body from the
third heat sink 54 and attached to the third heat sink 54. In the
embodiment shown in FIG. 3, the second joint part 58b extends in an
upper direction toward the surface 56a on a lower side of a fourth
heat sink 56 and extends to the IGBT element 20 side in the X
direction. The second joint part 58b is, as shown in FIG. 3,
electrically and mechanically connected with the first joint part
58a via the solder 64. The second joint part 58b and the first
joint part 58a are formed between the second heat sink 52 and the
third heat sink 54 in the X direction, and mutually connected
electrically and mechanically between the second heat sink 52 and
the third heat sink 54 in the X direction.
[0049] On a top surface side of the IGBT element 30, a second
terminal 62 is disposed such that the second terminal 62 does not
overlap with the gate electrode 36 in the Z direction but faces the
emitter electrode 34. The second terminal 62 is a flat metal plate
(metal block) but may have the bent part. A surface on a lower side
of the second terminal 62 is electrically and mechanically
connected with the emitter electrode 34 of the IGBT element 30 via
the solder 64. To the surface on the lower side of the second
terminal 62, also an anode electrode of the FWD element 38 is
connected. The second terminal 62 has a relay function for
electrically connecting the IGBT element 30 and the FWD element 38
with the fourth heat sink 56 and a function for securing a height
for performing wire bonding to the gate electrode 36.
[0050] The gate electrode 36 is connected with the gate terminal
46g of the control terminal 46 according to the lower arm via the
bonding wire 48. The control terminal 46 according to the lower arm
may be formed of a single heteromorphous lead frame together with
the third heat sink 54, the output terminal 44 and the like. The
control terminal 46 according to the lower arm may include, in
addition to the gate terminal 46g, a terminal that is connected
with the temperature measurement diode, the sense emitter and the
like. The control terminal 46 according to the lower arm is, as
shown in FIG. 1 and FIG. 2, externally withdrawn from a side
surface (a side surface having the Y direction as a normal line) on
an opposite side from a withdrawing side of the high potential
power terminal 40 in the resin part 66.
[0051] The fourth heat sink 56 is disposed on a surface on an upper
side of the second terminal 62. The surface 56a on the lower side
of the fourth heat sink 56 is electrically and mechanically
connected with the surface on the upper side of the second terminal
62 via the solder 64. Thus, the fourth heat sink 56 is connected
electrically with the emitter electrode 34 of the IGBT element 30
and the anode electrode of the FWD element 38 via the second
terminal 62.
[0052] The fourth heat sink 56 is a substantially rectangular metal
plate and disposed such that an almost entire part overlaps with
the third heat sink 54 in a top view (a downward view in the Z
direction). As shown in FIG. 2, the fourth heat sink 56 has a
rectangular shape substantially the same as an external shape of
the third heat sink 54. A surface 56b on an upper side of the
fourth heat sink 56 is exposed from the surface 66b on the upper
side of the resin part 66. Thus, heat generated by the IGBT element
30 and the FWD element 38 can be externally radiated from the
surface 56b of the fourth heat sink 56 via the second terminal 62.
In the embodiment shown in FIG. 3 and FIG. 4, although the surface
56b on the upper side of the fourth heat sink 56 is flush with the
surface 66b on the upper side of the resin part 66, the surface 56b
may have the offset in the Z-direction.
[0053] The fourth heat sink 56 includes a body part 56c that
defines the surfaces 56a and 56b and an extension part 56d that
extends from a side surface of the body part 56c to an IGBT element
20 side in the X direction. The extension part 56d is formed
integrally with the body part 56c. However, the extension part 56d
may be formed in a separate body from the body part 56c and
attached to the body part 56c. The extension part 56d is formed, in
the same manner as the joint part 58, between the body part 56c of
the fourth heat sink 56 and the second heat sink 52 (the body part
excluding the first joint part 58a) in the X-direction. However,
the extension part 56d has the offset with respect to the joint
part 58 in the Y direction so as not to interfere with the joint
part 58.
[0054] The low potential power terminal 42 is connected
electrically with the fourth heat sink 56. Specifically, as shown
in FIG. 4, the low potential power terminal 42 is connected
electrically and mechanically with the extension part 56d of the
fourth heat sink 56 via the solder 64. The low potential power
terminal 42 may be formed of the single heteromorphous lead frame
together with the third heat sink 54, the output terminal 44, the
control terminal 46 according to the lower arm and the like. As
shown in FIG. 2, a part of the low potential power terminal 42 is
externally withdrawn from the side surface of the resin part 66 (a
side surface having a normal line in the Y direction). The side
surface of the resin part 66 from which the low potential power
terminal 42 is withdrawn is the same as the side surface of the
resin part 66 from which the high potential power terminal 40 and
the output terminal 44 are withdrawn.
[0055] The low potential power terminal 42 is disposed in a region
70 (the body part excluding the first joint part 58a) between the
body part 56c of the fourth heat sink 56 and the second heat sink
52 in the X-direction, that is, in the region 70 in which the
extension part 56d is disposed. Thus, as shown in FIG. 2, the high
potential power terminal 40, the low potential power terminal 42,
and the output terminal 44 are disposed in a positional
relationship in which the low potential power terminal 42 is
located between the output terminal 44 and the high potential power
terminal 40 in the X direction. In the illustrated embodiment, an
entirety of the low potential power terminal 42 is disposed in a
region between the body part 56c of the fourth heat sink 56 and the
second heat sink 52 (the body part excluding the first joint part
58a).
[0056] The resin part 66 integrally seals the IGBT elements 20 and
30, the FWD elements 28 and 38, a part of the high potential power
terminal 40, a part of the low potential power terminal 42, a part
of the output terminal 44, a part of the control terminal 46, a
part excluding the surfaces 50b, 52b, 54b and 56b in the respective
heat sinks 50, 52, 54 and 56, the joint part 58 and the respective
terminals 60 and 62. In the illustrated embodiment, the resin part
66 is formed into an external shape of a substantially a cuboid. As
described above, the high potential power terminal 40, the low
potential power terminal 42, and the output terminal 44 are, as
shown in FIG. 2, withdrawn from the side surface of the resin part
66 in the Y direction. Although withdrawing positions of the high
potential power terminal 40, the low potential power terminal 42,
and the output terminal 44 on the side surface of resin part 66 may
be optional positions in the Z direction, for example, these may be
a proximity of a center on the side surface of the resin part 66 in
the Z direction (see FIG. 6C).
[0057] The semiconductor device 10 configured like this is a
so-called 2-in-1 package including integrally two IGBT elements 20
and 30 that constitute the upper and lower arms (including in the
single resin part 66). Further, on both sides in the Z direction of
each of the IGBT elements 20 and 30, the heat sinks 50, 52, 54 and
56 are disposed, the heat from the IGBT elements 20 and 30 can be
radiated from the both sides in the Z direction, that is, this is a
configuration excellent in the heat radiation property.
[0058] Further, since the high potential power terminal 40 and the
low potential power terminal 42 are disposed adjacently in the X
direction (without the output terminal 44 therebetween), compared
with a configuration in which the output terminal 44 is disposed
between the high potential power terminal 40 and the low potential
power terminal 42 in the X direction, a distance between the high
potential power terminal 40 and the low potential power terminal 42
in the X direction can be shortened. Thus, a surge voltage
generated during switching of the IGBT elements 20 and 30 can be
reduced. Specifically, as shown in FIG. 5, since directions of
currents that flow in the high potential power terminal 40 and the
low potential power terminal 42 are opposite with each other, when
the high potential power terminal 40 and the low potential power
terminal 42 are disposed in the proximity of each other, an effect
of cancelling a magnetic flux can be increased. Thus, since a
parasitic inductance can be reduced, the surge voltage can be
reduced.
[0059] Further, since the first heat sink 50, the third heat sink
54, the high potential power terminal 40, the low potential power
terminal 42, the output terminal 44, and the control terminal 46
according to the upper and lower arms can be formed of a single
heteromorphous lead frame, the configuration has excellent
productivity. However, a manufacturing method is not limited in
certain ways.
[0060] Further, by making use of the region 70 in the X direction,
by the joint part 58, the emitter electrode 24 of the IGBT element
20 and the anode electrode of the FWD element 28 are connected
respectively with the collector electrode 32 of the IGBT element 30
and the cathode electrode of the FWD element 38. Further, the low
potential power terminal 42 can be disposed by making use of a
space (region 70) that the joint part 58 utilizes. Thus, a
configuration that can realize miniaturization in the X direction
is obtained.
[0061] Each of FIG. 6A, FIG. 6B and FIG. 6C is a diagram that shows
a relationship of the respective creepage distances in the
semiconductor device 10. FIG. 6A shows a plan view when the
semiconductor device 10 is viewed from an upper side, FIG. 6B shows
a plan view when the semiconductor device 10 is viewed from a lower
side, and FIG. 6C shows a perspective view when the semiconductor
device 10 is viewed from an upper side.
[0062] In the present embodiment, each of the creepage distances is
set so as to satisfy the following relationships. Among a conductor
sites that are not sealed with the resin part 66 in the
semiconductor device 10 (that is, a conductor site that is exposed
from the resin part 66), when a part that becomes the same
potential as the high potential power terminal 40 is set to a first
potential part P, a part that becomes the same potential as the low
potential power terminal 42 is set to a second potential part N,
and a part that becomes the same potential as the output terminal
44 is set to a third potential part O, a first creepage distance
L1, L6, L7 between the first potential part P and the second
potential part N is longer than a second creepage distance L3, L9
between the first potential part P and the third potential part O,
and longer than a third creepage distance L2, L4, L5, L8 between
the second potential part N and the third potential part O. That
is, a minimum value among L1, L6 and L7 is larger than a minimum
value among L3, L9, L2, L4, L5 and L8. However, each of the
creepage distances is set to be equal to or more than a lower limit
(for example, a minimum creepage distance based on JIS standard).
In FIG. 6A and FIG. 6B, although L1, L3, L4 and the like are shown
in a flat layout, actually, as shown in FIG. 6C, these are
distances along two surfaces of the resin part 66 (a front surface
and a side surface on the upper side).
[0063] Therefore, according to the present embodiment, since the
creepage distance between the first potential part P and the third
potential part O or between the second potential part N and the
third potential part O is shorter than the creepage distance
between the first potential part P and the second potential part N,
even when insulating performance is degraded due to deterioration
of the resin part 66, likelihood of short-circuiting
(short-circuiting of the upper and lower arms) between the first
potential part P and the second potential part N can be reduced.
That is, even when the insulating performance is degraded due to
deterioration of the resin part 66, before the short-circuiting is
caused between the first potential part P and the second potential
part N, the short-circuiting can be caused between the first
potential part P and the third potential part O (for example,
between the collector and the emitter of the IGBT element 20) or
between the second potential part N and the third potential part O
(for example, between the collector and the emitter of the IGBT
element 30). When the short-circuiting is caused between the first
potential part P and the third potential part O or between the
second potential part N and the third potential part O (that is,
when the short-circuiting is caused between the collector and the
emitter), a protection function is operated, and the
short-circuiting of the upper and lower arms can be prevented
thereby. For example, when the short-circuiting is caused between
the first potential part P and the third potential part O, the IGBT
element 30 is kept in an off state, and the upper and lower arms
are prevented from being short-circuited thereby. Further, when the
short-circuiting is caused between the second potential part N and
the third potential part O, the IGBT element 20 is kept in the off
state, and the upper and lower arms are prevented from being
short-circuited thereby.
[0064] Each of FIG. 7A and FIG. 7B is a diagram that shows a
semiconductor device 10A according to a variant embodiment of the
first embodiment. FIG. 7A is a top view of the semiconductor device
10A, and FIG. 7B is a cross-sectional view of the semiconductor
device 10A.
[0065] The semiconductor device 10A is different from the
semiconductor device 10 according to the above-described first
embodiment in a point that an entirety of the second heat sink 52
and an entirety of the fourth heat sink 56 are sealed in the resin
part 66. In this case, since the creepage distances according to
the second heat sink 52 and the fourth heat sink 56 (L1, L2 and the
like in FIG. 6A and FIG. 6C) are not generated, these are not
considered.
[0066] According to the embodiment shown in FIG. 7A and FIG. 7B,
the second heat sink 52 and the fourth heat sink 56 work
substantially as a bus bar (substantially, single-sided radiation
due to the first heat sink 50 and the third heat sink 54). The
respective terminals 60 and 62 may be omitted.
[0067] Each of FIG. 8A and FIG. 8B is a diagram that shows a
semiconductor device 10B according to another variant embodiment of
the first embodiment. FIG. 8A is a top view of the semiconductor
device 10B, and FIG. 8B is a cross-sectional view of the
semiconductor device 10B.
[0068] The semiconductor device 10B is different from the
semiconductor device 10 according to the above-described first
embodiment in a point that an entirety of the respective heat sinks
50, 52, 54 and 56 is sealed in the resin part 66. In this case,
since the creepage distances according to the respective heat sinks
50, 52, 54 and 56 (L1, L2 and the like in FIG. 6A and FIG. 6C) are
not generated, these are not considered. That is, the creepage
distances according to the high potential power terminal 40, the
low potential power terminal 42 and the output terminal 44 (for
example, L5, L6 in FIG. 6A, FIG. 6B and FIG. 6C) may be considered.
That is, in this case, a condition of L6>L5 may be set.
[0069] In the embodiment shown in FIG. 8A and FIG. 8B, the second
heat sink 52, the fourth heat sink 56 and the like function
substantially as the bus bar. The respective terminals 60 and 62
may be omitted.
[0070] FIG. 9 is a top view that shows a semiconductor device 10C
according to another variant embodiment of the first
embodiment.
[0071] The semiconductor device 10C is different from the
semiconductor device 10 according to the above-described first
embodiment in a point that new terminals 47 and 49 are exposed from
the resin part 66. In the embodiment shown in FIG. 9, the terminal
47 may be formed in the third heat sink 54 and forms the third
potential part O. The terminal 49 may be formed in the first heat
sink 50 and forms the first potential part P. The terminals 47 and
49 may be used for detecting a voltage. In this case, the creepage
distances according to the terminals 47 and 49 may be additionally
considered. For example, a creepage distance L10 between the
terminal 47 and the control terminal 46 (that forms the second
potential part N), a creepage distance L11 between the terminal 47
and the surface 56b of the fourth heat sink 56, a creepage distance
L12 between the terminal 49 and the control terminal 46 (forms the
third potential part O), a creepage distance L13 between the
terminal 49 and the surface 52b of the second heat sink 52 and the
like may be additionally considered.
[0072] Thus, number and kind of terminals that are exposed from the
resin part 66, a side to be exposed and the like are optional.
[0073] FIG. 10 is a top view that shows a semiconductor device 10D
according to another variant embodiment of the first
embodiment.
[0074] The semiconductor device 10D is different from the
semiconductor device 10 according to the above-described first
embodiment in a point that the resin part 66 is substituted with a
resin part 66D. The resin part 66D includes a recess part 67 on a
side surface. The recess part 67 is formed between the low
potential power terminal 42 and the high potential power terminal
40. Thus, the creepage distance between the low potential power
terminal 42 and the high potential power terminal 40 can be
efficiently increased, and the relationship of the above-described
respective creepage distances becomes likely to be satisfied. The
recess part 67 may be formed only in a position range that defines
the creepage distance in the Z direction. Further, between the low
potential power terminal 42 and the high potential power terminal
40, in place of the recess part 67, a protrusion part may be
formed. Further, in a way of the same thinking, on the surface 66b
on an upper side of the resin part 66D (or the resin part 66) or
the surface 66a on a lower side thereof, the recess part or the
protrusion part is formed, and also the creepage distance between
the first potential part P and the second potential part N can be
increased thereby.
[0075] FIG. 11 is a top view that shows a semiconductor device 10E
according to another variant embodiment of the first
embodiment.
[0076] The semiconductor device 10E is different from the
semiconductor device 10 according to the above-described first
embodiment in a point that an arrangement of the high potential
power terminal 40, the low potential power terminal 42 and the
output terminal 44 is different in the X direction. That is, in the
embodiment shown in FIG. 11, the output terminal 44 is disposed
between the high potential power terminal 40 and the low potential
power terminal 42 in the X direction. Thus, an order of arrangement
of the high potential power terminal 40, the low potential power
terminal 42 and the output terminal 44 is optional. The embodiment
shown in FIG. 11 is, as described above, a configuration that is
disadvantageous than the semiconductor device 10 according to the
above-described first embodiment from a view point of the parasitic
inductance but is a configuration that is advantageous from a
viewpoint of securing a necessary creepage distance between the
high potential power terminal 40 and the low potential power
terminal 42. In other words, the semiconductor device 10 according
to the above-described first embodiment makes it possible to keep a
proper creepage distance between the high potential power terminal
40 and the low potential power terminal 42 while reducing the
parasitic inductance.
[0077] Each of FIG. 12A, FIG. 12B and FIG. 12C is a diagram that
shows a semiconductor device 1OF according to another variant
embodiment of the first embodiment. FIG. 12A is a top view of the
semiconductor device 10F, FIG. 12B is a cross-sectional view of the
semiconductor device 10F, and FIG. 12C is a cross-sectional view
that schematically shows a state of a printed-wiring board on which
the semiconductor device 10F is mounted.
[0078] The semiconductor device 10F is different from the
semiconductor device 10 according to the above-described first
embodiment in a point that the semiconductor device 10F is a
surface mount type as shown in FIG. 12C. That is, the semiconductor
device 10F is mounted on a surface of a printed-wiring board 90. In
the printed-wiring board 90, conductor parts (or conductor
patterns) 92, 94 and 96 are formed. The surface 50b on the lower
side of the first heat sink 50 is electrically and mechanically
connected with the conductor part 92 via the solder (or conductor
bump or the like) 80. Further, the control terminal 46 according to
the IGBT element 20 is electrically and mechanically connected with
the conductor part 96 via the solder (or conductor bump or the
like) 80. Similarly, the surface 54b on the lower side of the third
heat sink 54 is electrically and mechanically connected with the
conductor part 94 via the solder (or conductor bump or the like)
80. Further, the control terminal 46 according to the IGBT element
30 is electrically and mechanically connected with the conductor
part 96 via the solder (or conductor bump or the like) 80.
[0079] Also in the embodiment shown in FIG. 12A, FIG. 12B and FIG.
12C, the respective creepage distances in the semiconductor device
10F are set so as to have the above-described relationships. In
particular, in the case of the semiconductor device 10F, functions
of the high potential power terminal 40 and the output terminal 44
(external connection function) are realized by the surface 50b on
the lower side of the first heat sink 50 and the surface 54b on the
lower side of the third heat sink 54, and the high potential power
terminal 40 and the output terminal 44 are unnecessary.
[0080] Therefore, since the creepage distances according to the
high potential power terminal 40 and the output terminal 44 are not
generated, these are not considered.
[0081] Each of FIG. 13A and FIG. 13B is a diagram that shows a
semiconductor device 10G according to another variant embodiment of
the first embodiment. FIG. 13A is a plan view when the
semiconductor device 10G is viewed from an upper side, and FIG. 13B
is a plan view when the semiconductor device 10G is viewed from a
lower side. In FIG. 13A and FIG. 13B, the resin part 66 is shown in
a perspective view such that an inside of the resin part can be
viewed.
[0082] The semiconductor device 10G is different from the
semiconductor device 10 according to the above-described first
embodiment mainly in a point that, as shown in FIG. 13A and FIG.
13B, the semiconductor device 10G is a so-called 6 in 1 package
that includes integrally (includes in a single resin part 66) the
IGBT elements 20 and 30 of the respective upper and lower arms of
three-phases (U-phase, V-phase, W-phase). Further, the
semiconductor device 10G is different from the semiconductor device
10 according to the above-described first embodiment, which has the
double-sided heat radiation configuration, in a point that, as
shown in FIG. 13A and FIG. 13B, the semiconductor device 10G has a
single-sided heat radiation configuration. However, in the
semiconductor device 10G, also a double-sided heat radiation
configuration can be adopted. That is, in the 6-in-1 package, also
a double-sided heat radiation configuration can be adopted.
[0083] The IGBT elements 20 of the respective phases are mounted on
a surface of a common first heat sink 50A. The IGBT elements 20 of
the respective phases are mounted on the common first heat sink
50A. Further, the IGBT elements 30 of the respective phases are
mounted on the separate third heat sinks 54, respectively. A high
potential power terminal 400 functions as the bus bar and one end
thereof is electrically and mechanically connected with the first
heat sink 50A. The other end of the high potential power terminal
400 is externally exposed from the resin part 66. A low potential
power terminal 420 functions as the bus bar and one end thereof is
electrically and mechanically connected with the emitter electrodes
of the IGBT elements 30 of the respective phases. The other end of
the low potential power terminal 420 is externally exposed from the
resin part 66. The high potential power terminal 400 and the low
potential power terminal 420 are preferably externally exposed
adjacently from the resin part 66 as shown in FIG. 13A and FIG.
13B. Thus, as described above, the effect of cancelling the
magnetic flux can be improved and the parasitic inductance can be
reduced. However, also in this case, a creepage distance L14
between the high potential power terminal 400 and the low potential
power terminal 420 is set larger than a minimum value of the
respective creepage distances (for example, L16) between the first
potential part P and the third potential part O or a minimum value
of the respective creepage distances (for example, L15) between the
second potential part N and the third potential part O. In the
embodiment shown in FIG. 13A and FIG. 13B, output terminals 440 of
the respective phases are externally exposed from the resin part 66
on a side surface on an opposite side in the Y direction from a
side surface from which the high potential power terminal 400 and
the low potential power terminal 420 in the resin part 66 are
exposed.
[0084] Although the embodiment shown in FIG. 13A and FIG. 13B has a
single-sided heat radiation configuration in the so-called 6 in 1
package, also in the single-sided heat radiation configuration in
the 2 in 1 package, regarding the high potential power terminal,
the low potential power terminal and the output terminal, a similar
configuration can be adopted. In this case, the output terminal 440
becomes one, and the low potential power terminal 420 is connected
to the emitter electrode of a single IGBT element 30.
[0085] Next, another embodiment (second embodiment) will be
described.
[0086] Each of FIG. 14A and FIG. 14B is a diagram that shows a
semiconductor device 12 according to the second embodiment. FIG.
14A is a top view of the semiconductor device 12, and FIG. 14B is a
side view of the semiconductor device 12 taken in a direction of
arrow Y of FIG. 14A. The semiconductor device 12 according to the
second embodiment is different from the semiconductor device 10
according to the above-described first embodiment mainly in a point
that the resin part 66 is substituted with a resin part 660. Other
configurations may be the same and descriptions thereof are
omitted. Further, also regarding the various variant embodiments to
the above-described first embodiment, a way of thinking described
below (formation of high comparative tracking index part 662 (high
CTI part 662)) can be applied.
[0087] The resin part 660 includes a body part 661 and the high CTI
part 662. The high CTI part 662 is formed of a material having the
CTI higher than that of the body part 661. In such a manner that a
material group I is a group of materials having the CTI of 600 or
more, and a material group II is a group of materials having the
CTI of 400 or more and less than 600, a relationship between the
material group and the CTI are determined. Which material group is
selected may be determined by applying functional insulation of
JISC 60664 (IEC60664). For example, according to JISC 60664, when a
voltage effective value to be used and a degree of contamination
are determined, regarding the material groups I, II, III or the
like, the minimum creepage distances to be observed are determined.
For example, when the degree of contamination of 2 and voltage
effective value of 800 V are set, the minimum creepage distance
according to the material group I of the resin is 4.0 mm and the
minimum creepage distance according to the material group III of
the resin is 8.0 mm. At this time, for example, in the embodiment
shown in FIG. 14A and FIG. 14B, in the case where a site excluding
the high CTI part 662 in the resin part 660 (that is, the body part
661) is formed of a material of the material group III, and in the
case where the creepage distance L6 is smaller than 8.0 mm but is
4.0 mm or more, the high CTI part 662 may be formed of a material
of the material group I.
[0088] The high CTI part 662 may be formed only in a necessary
place in the resin part 660. For example, when the first creepage
distance is smaller than the minimum creepage distance according to
the material group of the body part 661, a site that defines the
relevant first creepage distance is formed of a material of a
material group having the minimum creepage distance that is the
relevant first creepage distance or less (a material of the
material group having higher CTI) and becomes the high CTI part
662.
[0089] Although the high CTI part 662 may be formed, as shown with
a dotted line in FIG. 14A, only on a superficial layer part of the
resin part 660, the high CTI part 662 may be formed with some
degree of depth (Y direction). The high CTI part 662 may be
additionally formed by potting a resin material having a
corresponding CTI after formation of the body part 661, or the high
CTI part 662 may be formed by coating the resin material having the
corresponding CTI after formation of the body part 661. In the
embodiment shown in FIG. 14A and FIG. 14B, since the creepage
distance L6 between the high potential power terminal 40 and the
low potential power terminal 42 is smaller than the minimum
creepage distance according to the material group of the body part
661, the high CTI part 662 is formed between the high potential
power terminal 40 and the low potential power terminal 42. The high
CTI part 662 is formed, as shown in FIG. 14B, so as to surround a
circumference of both the high potential power terminal 40 and the
low potential power terminal 42 in a side view. However, as shown
in FIG. 15, the high CTI part 662 may be formed only in an entire
region between the high potential power terminal 40 and the low
potential power terminal 42 in the X direction, or, under the
condition that a necessary insulating property is satisfied, the
high CTI part 662 may be formed only in a part of region between
the high potential power terminal 40 and the low potential power
terminal 42 in the X direction.
[0090] In the semiconductor device 12 according to the second
embodiment, different from the semiconductor device 10 according to
the above-described first embodiment, the first creepage distance
between the first potential part P and the second potential part N
may be smaller than a minimum value of the second creepage distance
between the first potential part P and the third potential part O
and may be smaller than a minimum value of the third creepage
distance between the second potential part N and the third
potential part O. However, in the present embodiment 2, the
respective creepage distances are set so as to satisfy the
following relationships. When the minimum value of the creepage
distance between the first potential part P and the second
potential part N is set to L.sub.1, the minimum creepage distance
according to a material between the first potential part P and the
second potential part N (that is, a material of the high CTI part
662) is set to L.sub.1min, the minimum value of the creepage
distance between the first potential part P and the third potential
part O is set to L.sub.2, the minimum creepage distance according
to a material between the first potential part P and the third
potential part O (that is, a material of the body part 661) is set
to L.sub.2min, the minimum value of the creepage distance between
the second potential part N and the third potential part O is set
to L.sub.3, and the minimum creepage distance according to a
material of the CTI between the second potential part N and the
third potential part O (that is, a material of the body part 661)
is set to L.sub.3min, at least any one of the following two
formulas is satisfied.
(L.sub.2-L.sub.2min)/L.sub.2min<(L.sub.1-L.sub.1min)/L.sub.1min
(L.sub.3-L.sub.3min)/L.sub.3min<(L.sub.1-L.sub.1min)/L.sub.1min
The two formulas described above are based on the fact that the
minimum creepage distance is represented by a linear proportional
expression with respect to the voltage effective value. That is,
the minimum creepage distance increases proportionally as the
voltage effective value increases. The
(L.sub.k-L.sub.kmin)/L.sub.kmin (k=1, 2, 3) in the above-described
two formulas represents a margin with respect to the minimum
creepage distance. For example, when the degree of contamination is
set to 2 and the voltage effective value is set to 800 V, the
minimum creepage distance according to the material group I of the
resin is 4.0 mm. At this time, when the creepage distance is 6 mm,
the margin is 1.5. Since the minimum creepage distance is in a
proportional relationship with respect to the voltage effective
value, the margin is a comparable parameter even when the voltage
effective values are different. The margin is an indicator that
shows that as the margin becomes closer to 1, the short-circuiting
tends to occur. Therefore, when any one of the above-described two
formulas is satisfied, the same effect as that of the
above-described first embodiment can be obtained. That is, even
when the insulating performance is degraded due to deterioration of
the resin part 66, before the short-circuiting is caused between
the first potential part P and the second potential part N, the
short-circuiting can be caused between the first potential part P
and the third potential part O (for example, between the collector
and the emitter of the IGBT element 20) or between the second
potential part N and the third potential part O (for example,
between the collector and the emitter of the IGBT element 30).
[0091] According to the second embodiment, when the resin part 660
is formed of a material having different CTI, although a
disadvantage is caused from the productivity point of view,
restriction of the creepage distance can be reduced. Thus, for
example, when a part between the high potential power terminal 40
and the low potential power terminal 42 is formed of a material
having a relatively high CTI, in comparison with a case in which
the material having the relatively low CTI is used to form, the
creepage distance between the high potential power terminal 40 and
the low potential power terminal 42 can be made smaller and the
parasitic inductance can be further reduced.
[0092] Although in the embodiment shown in FIG. 14A, FIG. 14B and
FIG. 15, the high CTI part 662 is formed between the high potential
power terminal 40 and the low potential power terminal 42, the high
CTI part 662 may be formed between other first potential part P and
the second potential part N.
[0093] Next, another embodiment (third embodiment) will be
described.
[0094] FIG. 16 is a diagram that shows a semiconductor device 13
according to the third embodiment. The semiconductor device 13 is
different from the semiconductor device 10 according to the
above-described first embodiment in a point that a relationship of
spatial distances described below is satisfied. Also about the
various variant embodiments to the above-described first
embodiment, a way of thinking of the spatial distance described
below can be applied. In the semiconductor device 13, although the
first creepage distance between the first potential part P and the
second potential part N may be smaller than the minimum value of
the second creepage distance between the first potential part P and
the third potential part O, and smaller than the minimum value of
the third creepage distance between the second potential part N and
the third potential part O, it is preferable to have a similar
relationship of the creepage distance as the one of the
above-described first embodiment.
[0095] Specifically, a first spatial distance between the first
potential part P and the second potential part N (a minimum value
thereof when a plurality thereof is present) is longer than a
second spatial distance between the first potential part P and the
third potential part O (a minimum value thereof when a plurality
thereof is present), or longer than a third spatial distance
between the second potential part N and the third potential part O
(a minimum value thereof when a plurality thereof is present).
However, the second spatial distance and the third spatial distance
are set to be the lower limit (for example, the minimum spatial
distance based on JIS standard) or more. Thus, the likelihood of
short-circuiting between the first potential part P and the second
potential part N due to a space discharge can be reduced. That is,
even when the space discharge is caused, before the
short-circuiting is caused between the first potential part P and
the second potential part N, the short-circuiting can be caused
between the first potential part P and the third potential part O
(for example, between the collector and the emitter of the IGBT
element 20) or between the second potential part N and the third
potential part O (for example, between the collector and the
emitter of the IGBT element 30).
[0096] In the embodiment shown in FIG. 16, the high potential power
terminal 40, the low potential power terminal 42 and the output
terminal 44 are formed such that the first spatial distance Ls1
between the high potential power terminal 40 and the low potential
power terminal 42 is longer than the third spatial distance Ls3
between the low potential power terminal 42 and the output terminal
44. Thus, before the short-circuiting is caused between the first
potential part P and the second potential part N, the
short-circuiting can be caused between the second potential part N
and the third potential part O (for example, between the collector
and the emitter of the IGBT element 30).
[0097] In the embodiment shown in FIG. 16, from a positional
relationship between the high potential power terminal 40, the low
potential power terminal 42 and the output terminal 44, the second
spatial distance Ls2 between the high potential power terminal 40
and the output terminal 44 is sufficiently long, therefore, the
second spatial distance Ls2 may not be substantially considered.
However, in a configuration shown in, for example, FIG. 9, since
the second spatial distance between the terminal 49 and the control
terminal 46 (form the third potential part O) can be made smaller,
the first spatial distance may be set larger than such second
spatial distance.
[0098] FIG. 17 is a top view that shows a semiconductor device 13B
according to another variant embodiment of the third embodiment.
The semiconductor device 13B is different from the semiconductor
device 13 according to the above-described third embodiment, as
shown in FIG. 17, in a point that the low potential power terminal
42 and the output terminal 44 are substituted with a low potential
power terminal 42B and an output terminal 44B.
[0099] The low potential power terminal 42B includes a protrusion
part 43 that protrudes in the X-direction toward the output
terminal 44B, and the output terminal 44B includes a protrusion
part 45 that protrudes in the X-direction toward the low potential
power terminal 42B. Thus, the third spatial distance Ls3 between
the low potential power terminal 42 and the output terminal 44 may
be positively made smaller. However, the third spatial distance Ls3
is set to be the lower limit (for example, the minimum spatial
distance based on JIS standard) or more. Thus, the first spatial
distance Ls1 between the high potential power terminal 40 and the
low potential power terminal 42 can be readily made longer than the
third spatial distance Ls3 between the low potential power terminal
42 and the output terminal 44.
[0100] In the embodiment shown in FIG. 17, any one of the
protrusion part 43 and the protrusion part 45 may be omitted.
Further, the protrusion part 43 and the protrusion part 45 may be
formed over an entirety of the exposed parts of the low potential
power terminal 42 and output terminal 44. That is, by expanding
widths (widths in the X-direction) of the exposed parts of the low
potential power terminal 42 and the output terminal 44, the first
spatial distance Ls1 between the high potential power terminal 40
and the low potential power terminal 42 may be made to be longer
than the third spatial distance Ls3 between the low potential power
terminal 42 and the output terminal 44.
[0101] Although the respective embodiments have been described in
detail, without limiting to particular embodiment, in a range
described in claims, various variations and alterations can be
made. Further, also all or a plurality of constituent elements of
the above-described embodiments can be combined.
[0102] For example, in the embodiments described above, IGBT
elements 20 and 30 are used as a switching element. However, a
switching element other than the IGBT element such as a MOSFET
(Metal Oxide Semiconductor Field-Effect Transistor) may be used.
Further, the IGBT elements 20 and 30 may be a reverse conductive
IGBT (RC-IGBT) that incorporates the FWD elements 28 and 38.
* * * * *