U.S. patent application number 15/182252 was filed with the patent office on 2016-10-06 for semiconductor laser.
This patent application is currently assigned to Kabushiki Kaisha Toshiba. The applicant listed for this patent is Kabushiki Kaisha Toshiba. Invention is credited to Takayoshi Fuji, Akira Maekawa, Yasumoto Shiomi, Shigeyuki TAKAGI, Hidehiko Yabuhara.
Application Number | 20160294161 15/182252 |
Document ID | / |
Family ID | 47614629 |
Filed Date | 2016-10-06 |
United States Patent
Application |
20160294161 |
Kind Code |
A1 |
TAKAGI; Shigeyuki ; et
al. |
October 6, 2016 |
SEMICONDUCTOR LASER
Abstract
A semiconductor laser includes: a stacked body having an active
layer including a quantum well layer, the active layer having a
cascade structure including a first region capable of emitting
infrared laser light with a wavelength of not less than 12 .mu.m
and not more than 18 .mu.m by an intersubband optical transition of
the quantum well layer and a second region capable of relaxing
energy of a carrier alternately stacked, the stacked body having a
ridge waveguide and being capable of emitting the infrared laser
light; and a dielectric layer provided so as to sandwich both sides
of at least part of side surfaces of the stacked body, a wavelength
at which a transmittance of the dielectric layer decreases to 50%
being 16 .mu.m or more, the dielectric layer having a refractive
index lower than refractive indices of all layers constituting the
active layer.
Inventors: |
TAKAGI; Shigeyuki;
(Kanagawa-ken, JP) ; Yabuhara; Hidehiko;
(Kanagawa-ken, JP) ; Maekawa; Akira;
(Kanagawa-ken, NP) ; Fuji; Takayoshi;
(Kanagawa-ken, JP) ; Shiomi; Yasumoto;
(Kanagawa-ken, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Kabushiki Kaisha Toshiba |
Minato-ku |
|
JP |
|
|
Assignee: |
Kabushiki Kaisha Toshiba
Minato-ku
JP
|
Family ID: |
47614629 |
Appl. No.: |
15/182252 |
Filed: |
June 14, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13565008 |
Aug 2, 2012 |
9407065 |
|
|
15182252 |
|
|
|
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01S 2301/176 20130101;
H01S 5/3211 20130101; H01S 5/2022 20130101; H01S 2301/166 20130101;
B82Y 20/00 20130101; H01S 5/12 20130101; H01S 5/22 20130101; H01S
5/2219 20130101; H01S 5/34333 20130101; H01S 5/3425 20130101; H01S
1/00 20130101; H01S 5/2054 20130101; H01S 5/2031 20130101; H01S
5/3402 20130101 |
International
Class: |
H01S 5/34 20060101
H01S005/34; H01S 1/00 20060101 H01S001/00; H01S 5/12 20060101
H01S005/12; H01S 5/20 20060101 H01S005/20; H01S 5/343 20060101
H01S005/343; H01S 5/22 20060101 H01S005/22 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 3, 2011 |
JP |
2011-170145 |
Claims
1. A semiconductor laser comprising: a stacked body disposed on an
InP or GaAs substrate having an active layer including a quantum
well layer the active aver having a cascade structure including a
first region capable of emitting infrared laser light by an
intersubband optical transition of the quantum well layer and a
second region capable of relaxing energy of a carrier injected from
the first region alternately stacked, the stacked body having a
ridge waveguide and being capable of emitting the infrared laser
light in a direction along which the ridge waveguide extends; and a
dielectric layer provided so as to sandwich at least both sides of
the active layer of the stacked body in a cross section, the
dielectric layer having a refractive index lower than refractive
indices of all lavers constituting the active layer, the dielectric
layer being made of at least one single-crystal material of
thallium bromoiodide, thallium bromochloride, ZnSe, CdTe, and
diamond formed directly on the InP or GaAs substrate and including
neither acceptors nor donors at a region adjacent to the side
surfaces of the active layer.
2. The semiconductor laser according to claim 1, further comprising
a first electrode connected to the ridge waveguide.
3. The semiconductor laser according to claim 1, further comprising
an insulating film covering a surface of the dielectric layer.
4. The semiconductor laser according to claim 1, wherein the second
region has a plurality of minibands.
5. The semiconductor laser according to claim 1, wherein an
extraction barrier layer is provided between the first region and
the second region and an injection barrier layer is provided
between the second region and the first region.
6. The semiconductor laser according to claim 1, wherein a
diffraction grating is provided in the stacked body in the
direction along which the ridge waveguide extends.
7. The semiconductor laser according to claim 6, wherein a pitch of
the diffraction grating is one half of an in-medium wavelength.
8. The semiconductor laser according to claim 1, wherein the ridge
waveguide has a first end surface and a second end surface on an
opposite side of the first end surface, a first reflection film is
provided at the first end surface, and a second reflection film
having a reflectance higher than a reflectance of the first
reflection film is provided at the second end surface.
9. The semiconductor laser according to claim 1, wherein the
carrier is an electron.
10. The semiconductor laser according to claim. 1, wherein the
active layer contains GaAs and Al.sub.xGa.sub.1-xAs
(0<x<1).
11. The semiconductor laser according to claim 1, wherein the
active layer contains In.sub.yGa.sub.1-yAs (0<y<1) and
Al.sub.zIn.sub.1-zAs (0<z<1).
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. Ser. No.
13/565,008 filed Aug. 2, 2012, the entire contents of which is
incorporated herein by reference. U.S. Ser. No. 13/565,008 is based
upon and claims the benefit of priority from the prior Japanese
Patent Application No. 2011-170145, filed on Aug. 3, 2011; the
entire contents of which is incorporated herein by reference.
FIELD
[0002] Embodiments described herein relate generally to a
semiconductor laser.
BACKGROUND
[0003] Lasers that emit infrared light have a wide field of
application such as environmental measurement. In many kind of
lasers, quantum cascade lasers made of semiconductors are small
sizes and highly convenient, and enable high-accuracy
measurement.
[0004] The quantum cascade laser includes, for example, an active
layer including quantum well layers in which GaInAs and AlInAs are
alternately stacked. Further, the quantum cascade laser has a
structure in which both side surfaces of the active layer are
placed between, for example, InP cladding layers. In this case, the
quantum well layers cascade-connected can emit infrared laser light
with a wavelength of 4 to 10 .mu.m by the intersubband optical
transition of carriers.
[0005] However, in the case of infrared laser light with a
wavelength of 10 .mu.m or more, infrared laser light emitted from
the active layer is absorbed in the InP cladding layers on both
side surfaces of the active layer because of light absorption due
to lattice vibrations (phonons) of InP. Consequently, light
emitting efficiency is reduced, and it is difficult to obtain
high-power laser light.
BRIEF DESCRIPTION OF THE DRAWING
[0006] FIG. 1A is a schematic perspective view of a portion cut out
of a semiconductor laser according to a first embodiment of the
invention, and FIG. 1B is a schematic cross-sectional view taken
along line A-A;
[0007] FIG. 2 is a band diagram describing the operation of the
semiconductor laser according to the first embodiment;
[0008] FIG. 3 is a graph showing the dependence of the wavelength
of infrared laser light on the Al mole fraction x of
Al.sub.xGa.sub.1-xAs;
[0009] FIG. 4 is a graph showing an absorption spectrum of InP;
[0010] FIG. 5 is a graph showing the dependence of the
transmittance of dielectric materials on the wave number;
[0011] FIGS. 6A to 6E are process ectional views up to forming the
ridge waveguide of a method for manufacturing a semiconductor laser
according to the first embodiment;
[0012] FIGS. 7A to 7D are process sectional views up to forming an
electrode of the method for manufacturing a semiconductor laser of
the first embodiment;
[0013] FIG. 8A is a schematic cross-sectional view of a
semiconductor laser according to a first modification example of
the first embodiment, and FIG. 8B is a schematic cross-sectional
view of a semiconductor laser according to a second modification
example of the first embodiment;
[0014] FIG. 9 is a graph showing the dependence of gain on
waveguide loss; and
[0015] FIG. 10 is a schematic cross-sectional view of a
semiconductor laser according to a second embodiment.
DETAILED DESCRIPTION
[0016] In general, according to one embodiment, a semiconductor
laser includes a stacked body and a dielectric layer. The stacked
body has an active layer including a quantum well layer. The active
layer has a cascade structure including a first region capable of
emitting infrared laser light with a wavelength of not less than 12
.mu.m and not more than 18 .mu.m by an intersubband optical
transition of the quantum well layer and a second region capable of
relaxing energy of a carrier injected from the first region
alternately stacked. The stacked body has a ridge waveguide and is
capable of emitting the infrared laser light in a direction along
which the ridge waveguide extends. A dielectric layer is provided
so as to sandwich both sides of at least part of side surfaces of
the stacked body in a cross section orthogonal to the ridge
waveguide. A wavelength at which a transmittance of light of the
dielectric layer decreases to 50% is 16 .mu.m or more. The
dielectric layer has a refractive index lower than refractive
indices of all layers constituting the active layer.
[0017] Various embodiments will be described hereinafter with
reference to the accompanying drawings.
[0018] FIG. 1A is a schematic perspective view of a portion cut out
of a semiconductor laser according to a first embodiment of the
invention, and FIG. 1B is a schematic cross-sectional view taken
along line A-A.
[0019] The semiconductor laser includes at least a substrate 10, a
stacked body 20 provided on the substrate 10, and a dielectric
layer 40. In FIG. 1A, the semiconductor laser further includes a
first electrode 50, a second electrode 52, and an insulating film
42.
[0020] The stacked body 20 includes a first cladding layer 22, a
first guide layer 23, an active layer 24, a second guide layer 25,
and a second cladding layer 28. The refractive index of the first
cladding layer 22 and the refractive index of the second cladding
layer 28 are set lower than all of the refractive indices 30 of the
first guide layer 23, the active layer 24, and the second guide
layer 25 so that infrared laser light 60 may be appropriately
confined in the stacking direction of the active layer 24. The
first guide layer 23 and the first cladding layer 22 may be
collectively called a cladding layer. Furthermore, 35 the second
guide layer 25 and the second cladding layer 28 may be collectively
called a cladding layer.
[0021] The stacked body 20 has a striped configuration, and may be
called a ridge waveguide RG. When the two end surfaces of the ridge
waveguide RG are configured to be mirror surfaces, light generated
by stimulated emission is emitted from the light emission surface
as infrared laser light 60. In this case, the optical axis 62 is
defined as a line connecting centers of a cross section of an
optical resonator of which the mirror surfaces serve as resonance
surfaces. That is, the optical axis 62 agrees with the direction
along which the ridge waveguide RG extends.
[0022] If the width WA in a direction parallel to a first surface
24a and a second surface 24b of the active layer 24 is excessively
wide in a cross section perpendicular to the optical axis 62, a
higher-order mode occurs in a horizontal direction, and this makes
it difficult to obtain high power. When the width WA of the active
layer 24 is set to, for example, 5 to 20 .mu.m or the like, the
mode control in the horizontal direction is easy. When the
refractive index of the dielectric layer 40 is set lower than the
refractive indices of all the layers constituting the active layer
24, the ridge waveguide RG can be formed along the optical axis 62
by the dielectric layers 40 provided so as to sandwich the side
surfaces 20a and 20b of the stacked body 20.
[0023] FIG. 2 is a band diagram describing the operation of the
semiconductor laser according to the first embodiment.
[0024] The active layer 24 has a cascade structure in which a first
region 25 and a second region 26 are alternately stacked. The first
region 25 can emit infrared laser light 60 with a wavelength of,
for example, not less than 12 .mu.m and not more than 18 .mu.m by
the intersubband optical transition of a quantum well layer 72. The
second region 26 can relax the energy of a carrier (e.g. an
electron) 70 injected from the first region 25.
[0025] In the quantum well layer 72, when the thickness WT of the
well layer is decreased to, for example, several nanometers or
less, the energy level is divided into a subband 72a (a high level
Lu), a subband 72b (a low level Ll), etc. An electron 70 injected
through an injection barrier layer 73 can be effectively confined
in the quantum well layer 72. When the carrier transitions from the
high level Lu to the low level Ll, light (hv) corresponding to the
energy difference (Lu-Ll) is emitted (optical transition). The
quantum well layer 72 may include a plurality of wells where the
wave functions overlap, and may have common levels Lu and Ll.
[0026] Intersubband transition occurs in either of the conduction
band and the valence band. That is, recombination of holes and
electrons in p-n junction is not necessary, and light emission is
made by the optical transition of only one kind of carrier. In FIG.
2, the stacked body 20 uses the voltage applied between the first
electrode 50 and the second electrode 52 to inject the electron 70
into the quantum well layer 72 via the injection barrier layer 73,
and causes an intersubband transition.
[0027] The second region 26 has a plurality of subbands (also
called minibands). The energy difference between subbands is
preferably small to form almost a continuous energy band.
Consequently, since the energy of the electron is relaxed, infrared
laser light with a wavelength of 12 to 18 .mu.m is not generated in
the second region 26. The electron of the low level Ll in the first
region 25 passes through an extraction barrier layer 74 to be
injected into the second region 26 and relaxed, and is injected
into the first region 25 of the next stage cascade-connected (the
electron 70) to make another optical transition. That is, in the
cascade structure, since the electron 70 makes optical transitions
individually in unit structures 27, it is easy to extract
high-power light output in the entire active layer 24.
[0028] In the first embodiment, the quantum well layer 72 may
contain GaAs, and the barrier layer may contain
Al.sub.xGa.sub.1-xAs (0<x<1). In this case, when the
substrate 10 is made of GaAs, lattice matching between the quantum
well layer and the barrier layer is satisfactorily made. The first
cladding layer 22 and the second cladding layer 28 may have an
n-type impurity concentration of, for example, 6.times.10.sup.18
cm.sup.-3 by Si doping, and may have a thickness of, for example, 1
.mu.m. The first guide layer 23 and the second guide layer 25 may
have an n-type impurity concentration of, for example,
4.times.10.sup.16 cm.sup.-3 by Si doping, and may have a thickness
of 3.5 .mu.m. The width WA of the active layer 24 may be 14 .mu.m,
and the length L of the ridge waveguide RG may be 3 mm or the
like.
[0029] The active layer 24 in which the Al mole fraction x of the
barrier layer is set to 0.32, the thickness WT of the well layer of
the quantum well layer 72 made of GaAs is set to, for example, 2 to
6 nm, and unit structures 27 capable of effectively confining an
electron in the quantum well layer 72 are cascade-connected in 50
stages has a thickness of, for example, 2 .mu.m or the like.
According to experiments, infrared laser light with a wavelength of
16.+-.0.3 .mu.m was able to be obtained when an electric field of
33.5 kV/cm was applied by means of the first electrode 50 and the
second electrode 52.
[0030] FIG. 3 is a graph showing the dependence of the wavelength
of infrared laser light on the Al mole fraction x of
Al.sub.xGa.sub.1-xAs. According to experiments, it has been found
that, when the Al mole fraction x is 0.25, the wavelength is
17.7.+-.0.3 .mu.m, and when the Al mole fraction is 0.47, the
wavelength is 12.3.+-.0.3 .mu.m. That is, as indicated by the
broken line in FIG. 3, infrared laser light in a required
wavelength range with a wavelength of 12 to 18 .mu.m was able to be
obtained by changing the Al mole fraction x.
[0031] The substrate 10 may be made of InP (refractive index:
2.50), and the first and second cladding layers 22 and 28 may be
made of InP (refractive index: 3.089). That is, when the active
layer 24 contains InAlAs and InGaAs and the thickness WT of the
well layer of the quantum well layer 72 is controlled, infrared
laser light with a wavelength in a range of not less than 12 .mu.m
and not more than 18 .mu.m can be obtained.
[0032] In environmental measurement etc., infrared laser light of
12 to 18 .mu.m is often required. Here, for example, infrared laser
light of 12 .mu.m or more can be obtained also by using a Raman
laser to wavelength-convert infrared laser light with a wavelength
of 10 .mu.m emitted from a carbon dioxide gas laser or the like.
However, the laser may have a complicated configuration and a large
size. In contrast, the quantum cascade laser is a semiconductor
laser and this is easy to downsize.
[0033] FIG. 4 is a graph showing an absorption spectrum of InP.
[0034] The vertical axis is the absorptance of light (relative
values), and the horizontal axis is the wave number of light
(cm.sup.-1). In the case of InP, there is an absorption peak of
phonons near the wavelength of 16 .mu.m (wave number: 628
cm.sup.-1). When the wavelength of the light emitted from the
active layer 24 is 16 .mu.m, if the layers sandwiching the side
surfaces 20a and 20b of the stacked body 20 including the first and
second cladding layers 22 and 28 and the active layer 24 are InP,
the InP absorbs part of the light emitted form the active layer 24.
In view of this, in the semiconductor laser that emits infrared
laser light in a wavelength range of 12 to 18 .mu.m, the dielectric
layers 40 sandwiching the side surfaces of the active layer 24
preferably have a transmittance higher than the transmittance of
InP for wavelengths of 16 .mu.m or more.
[0035] FIG. 5 is a graph showing the dependence of the
transmittance of dielectric materials on the wave number.
[0036] The vertical axis is the transmittance (%), and the
horizontal axis is the wave number (cm.sup.-1) or the wavelength
(.mu.m). The transmittance can be measured using a
spectrophotometer etc.
[0037] The embodiment uses a dielectric material in which the
wavelength at which the transmittance (%) of the dielectric
material decreases to 50% is 16 .mu.m or more. In FIG. 3, the
maximum values of the transmittances of many materials are not
100%. In this specification, "the wavelength at which the
transmittance decreases to 50%" does not mean the wavelength at
which the transmittance decreases to one half of the maximum value
thereof, but means "the wavelength at which the transmittance
measured using a photometer etc. decreases to 50%."
[0038] When a dielectric material in which the wavelength at which
the transmittance decreases to 50% is 16 .mu.m or more is used,
infrared laser light with a wavelength of 12 .mu.m or more being
absorbed can be suppressed, and it is easy to obtain high power. As
such a material, KBr (refractive index: 1.5), KRS-5 (thallium
bromoiodide, refractive index: 2.36), KRS-6 (thallium
bromochloride, refractive index: 2.14), NaCl, KCl (refractive
index: 1.49), diamond (refractive index: 2.4), ZnSe (refractive
index: 2.4), and the like may be used. The inventors' experiment
has revealed that it is also possible to use CdTe, AgBr, AgCl, and
the like. By providing the dielectric layer 40 thus configured on
both sides of part of the side surfaces 20a and 20b of the stacked
body 20, it becomes easy to control the horizontal mode, while
suppressing absorption of infrared laser light. When a
single-crystal material formed by epitaxial growth is used as the
dielectric layer 40, optical characteristics can be made more
stable. In this case, KRS-5, KRS-6, diamond, ZnSe, CdTe, and the
like are easily made into a single crystal.
[0039] Here, for example, the refractive index of GaAs is 3.62, and
the refractive index of Al.sub.0.35Ga.sub.0.65As is 3.47. The
refractive indices of InGaAs and AlInAs are between 3.2 and 3.43.
That is, the refractive index of the dielectric layer 40 is lower
than the refractive indices of all the layers constituting the
active layer 24, and the control of the horizontal mode of infrared
laser light is easy.
[0040] FIGS. 6A to 6E are process sectional views up to forming the
ridge waveguide of a method for manufacturing a semiconductor laser
according to the first embodiment.
[0041] The substrate 10 is made of n-type GaAs. As shown in FIG.
6A, on a first surface 10a of the substrate 10, for example, the
first cladding layer 22 made of n-type GaAs, the first guide layer
23 made of n-type GaAs, the active layer 24, the second guide layer
25 made of n-type GaAs, and the second cladding layer 28 made of
n-type GaAs are formed by crystal growth. The first guide layer 23
and the second guide layer 25 may be omitted. As the crystal growth
method, for example, the MBE (molecular beam epitaxy) method or the
MOCVD (metal organic chemical vapor deposition) method may be
used.
[0042] In the embodiment, the end surfaces of the ridge waveguide
RG may be configured to be mirror surfaces to form a Fabry-Perot
optical resonator. Alternatively, as shown in FIG. 6B, a
diffraction grating 29 may be provided on the surface of the second
cladding layer 28 or the like. The diffraction grating 29 is
provided in the optical axis direction of the optical resonator in
such a manner that the pitch of convex-concave structures is, for
example, one half of the in-medium wavelength. Such a configuration
can form a structure of distributed feedback (DFB) or distributed
Bragg reflector (DBR), and can provide dynamic single mode
oscillation. Then, as shown in FIG. 6C, an insulating film 30 of
SiO.sub.2 or the like is formed on the surface of the second
cladding layer 28.
[0043] Subsequently, as shown in FIG. 6D, a photoresist 70 is
patterned in a striped configuration in the region that forms the
ridge waveguide RG. As shown in FIG. 6E, the patterned photoresist
70 is used as a mask to etch the stacked body 20 using the RIE
(reactive ion etching) method or the like to form the ridge
waveguide RG. Then, the insulating film 30 is removed.
[0044] FIGS. 7A to 7D are process sectional views up to forming an
electrode of the method for manufacturing a semiconductor laser of
the first embodiment.
[0045] As shown in FIG. 7A, the dielectric layer 40 is formed so as
to cover the ridge waveguide RG of the stacked body 20 using laser
ablation, sputtering, deposition, or the like. Furthermore, the
insulating film (passivation film) 42 of SIN (including
Si.sub.3N.sub.4), SiO.sub.2, or the like is formed thereon. The
dielectric layer 40 may be made of, for example, KBr, ZnSe, NaCl,
KCl, KRS-5, KRS-6, diamond, or the like so that the transmittance
of light may be 50% or more at wavelengths of 16 .mu.m or more.
Although NaCl and KCl have deliquescence properties, their film
quality can be kept stable by providing the passivation film
42.
[0046] In the case where the diffraction grating is formed, as
shown in FIG. 76, an opening 42a is provided in the passivation
film 42 in such a manner that the dielectric layer 40 is exposed at
the upper surface of the diffraction grating 29. Subsequently, as
shown in FIG. 7C, a portion of the dielectric layer 40 is removed
to expose the diffraction grating 29 in the upper portion of the
stacked body 20.
[0047] Subsequently, as shown in FIG. 7D, the first electrode 50 is
formed on the passivation film 42 and the exposed surface RS of the
ridge waveguide RG. Extracting high power becomes easy by employing
a configuration in which a low-reflection film is provided on one
end surface of the ridge waveguide RG to form a light emitting
surface and a high-reflection film is provided on the other end
surface to form a light reflecting surface.
[0048] FIG. 8A is a schematic cross-sectional view of a
semiconductor laser according to a first modification example of
the first embodiment, and FIG. 86 is a schematic cross-sectional
view of a semiconductor laser according to a second modification
example of the first embodiment.
[0049] The ridge waveguide RG may not be provided in the entire
stacked body 20. In FIG. 8A, a portion 28a of the second cladding
layer 28 is used as the ridge waveguide RG. That is, the upper
portion 28a of the second cladding layer 28 has a mesa-like cross
section. The dielectric layer 40 is provided so as to cover the
mesa side surfaces 28b and the surfaces 28c on the non-forming
regions of mesa.
[0050] In FIG. 8B, the active layer 24, the second guide layer 25,
and the second cladding layer 28 are used as the ridge waveguide
RG. That is, the active layer 24, the second guide layer 25, and
the second cladding layer 28 have a mesa-like cross section. The
dielectric layer 40 is provided so as to cover the mesa side
surfaces and the first guide layers 23 on both sides of the mesa
side surfaces. Also configurations like FIGS. 8A and 8B allow the
horizontal mode to be controlled. When a pad electrode 51 including
a thick Au film is provided on the first electrode 50, wire bonding
is easy.
[0051] FIG. 9 is a graph showing the dependence of gain on
waveguide loss.
[0052] The vertical axis is the gain (1/cm), and the horizontal
axis is the waveguide loss (1/m).
[0053] When the dielectric layer 40 that is provided on the side
surface of the ridge waveguide RG and controls the horizontal mode
absorbs infrared laser light, waveguide loss (1/m) is caused. On
the other hand, as the current flowing through the active layer 24
increases, waveguide gain increases.
[0054] For laser oscillation, it is necessary for the gain to
exceed the waveguide loss, and the operating current necessary for
laser oscillation decreases in the order of
InP>GaAs>dielectric materials. If the operating current is
high, the inner heat generation amount is large, and continuous
operation may be difficult or the semiconductor laser may
deteriorate early. In the embodiment, by providing the dielectric
layer 40 on both side surfaces of the active layer 24, a
semiconductor laser can be provided in which continuous operation
is easy and the lifetime is long.
[0055] FIG. 10 is a schematic cross-sectional view of a
semiconductor laser according to a second embodiment.
[0056] In the second embodiment, the sum W2 of the width WA of the
active layer 24 and the lengths of the dielectric layers 40
provided on both side surfaces of the active layer 24 and parallel
to the surface of the substrate 10 is smaller than the thickness T2
of the active layer 24. Such a configuration can 30 reduce light
traveling from the active layer 24 toward the substrate 10, and can
relatively increase light traveling from the active layer 24 toward
the dielectric layers 40 on both side surfaces of the active layer
24. Consequently, light absorption in the substrate 10 can be
reduced. The embodiment makes it easy to suppress a decrease in
light output in the case of InP or the like which causes large
light absorption in the substrate 10.
[0057] The first embodiment, its accompanying first and second
modification examples, and the second embodiment provide a
semiconductor laser capable of emitting infrared laser light having
a wavelength range of 12 to 18 .mu.m. Such infrared laser light is
absorbed into specific materials, and can therefore be used for
environmental measurement etc. Furthermore, semiconductor lasers
are easy to downsize as compared to carbon dioxide gas lasers,
Raman lasers, etc.
[0058] While certain embodiments have been described, these
embodiments have been presented by way of example only, and are not
intended to limit the scope of the inventions. Indeed, the novel
embodiments described herein may be embodied in a variety of other
forms; furthermore, various omissions, substitutions and changes in
the form of the embodiments described herein may be made without
departing from the spirit of the inventions. The accompanying
claims and their equivalents are intended to cover such forms or
modifications as would fall within the scope and spirit of the
invention.
* * * * *