U.S. patent application number 15/099873 was filed with the patent office on 2016-09-15 for power conversion apparatus.
The applicant listed for this patent is Hitachi Automotive Systems, Ltd.. Invention is credited to Masashi KOSUGA, Hideyo SUZUKI.
Application Number | 20160270268 15/099873 |
Document ID | / |
Family ID | 50278022 |
Filed Date | 2016-09-15 |
United States Patent
Application |
20160270268 |
Kind Code |
A1 |
SUZUKI; Hideyo ; et
al. |
September 15, 2016 |
Power Conversion Apparatus
Abstract
An object of the present invention is to improve the cooling
performance of a capacitor module used in a power conversion
apparatus. The power conversion apparatus according to the present
invention includes a power semiconductor module, a capacitor
module, a flow path forming body that forms a flow path through
which a cooling refrigerant flows. The flow path forming body
includes a first flow path forming body that forms a first flow
path part for cooling the power semiconductor module, and a second
flow path forming body that forms a second flow path part for
cooling the capacitor module. The first flow path forming body is
provided on a side portion of the second follow path forming body
and is integrally formed with the second flow path forming body.
The second flow path forming body forms a housing space for housing
the capacitor module above the second flow path part. The first
flow path part is formed at a position facing the side wall that
forms the housing space. The power semiconductor module is inserted
into the first flow path part.
Inventors: |
SUZUKI; Hideyo;
(Hitachinaka, JP) ; KOSUGA; Masashi; (Hitachinaka,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Hitachi Automotive Systems, Ltd. |
Hitachinaka-shi |
|
JP |
|
|
Family ID: |
50278022 |
Appl. No.: |
15/099873 |
Filed: |
April 15, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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14418985 |
Feb 2, 2015 |
9345168 |
|
|
PCT/JP2013/069581 |
Jul 19, 2013 |
|
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|
15099873 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H05K 5/02 20130101; Y02T
10/70 20130101; H02M 7/217 20130101; H02P 27/06 20130101; H02M
7/537 20130101; H05K 7/20927 20130101; H05K 7/20254 20130101; H02M
7/003 20130101; H05K 1/0203 20130101; B60L 50/51 20190201 |
International
Class: |
H05K 7/20 20060101
H05K007/20; H05K 1/02 20060101 H05K001/02; H02M 7/00 20060101
H02M007/00; H05K 5/02 20060101 H05K005/02; B60L 11/18 20060101
B60L011/18; H02M 7/537 20060101 H02M007/537; H02P 27/06 20060101
H02P027/06 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 14, 2012 |
JP |
2012-202185 |
Claims
1. A power conversion apparatus comprising: a power semiconductor
module converting DC power to AC power; a capacitor module for
smoothing the DC power; a conductor plate connecting the power
semiconductor module with the capacitor module; a flow path forming
body forming a flow path through which a cooling refrigerant flows;
and a wall defining a first housing space for housing the power
semiconductor module and a second housing space for housing the
capacitor module, wherein the wall is connected with the flow path
forming body, and the conductor plate is thermally connected to the
wall through an insulating member.
2. The power conversion apparatus according to claim 1, wherein the
power semiconductor module has a module sealant sealing a power
semiconductor element, a first radiating portion forming a first
radiating surface facing a surface of the module sealant, and a
second radiating portion forming a second radiating surface facing
another surface of the module sealant, and the first radiating
portion and the second radiating portion are connected to the flow
path forming body.
3. The power conversion apparatus according to claim 1, wherein the
conductor plate has a positive electrode conductor plate, and a
negative electrode conductor plate facing the positive electrode
conductor plate through an insulating layer.
4. The power conversion apparatus according to claim 3, wherein a
laminated portion of the conductor plate where the positive
electrode conductor plate and the negative electrode conductor
plate are laminated with the insulating layer therebetween is
arranged at a position facing to the wall in a laminating direction
of the positive electrode conductor plate and the negative
conductor plate, and a portion of the conductor plate without
interposing the insulating layer is formed at a position facing to
the power semiconductor module.
5. The power conversion apparatus according to claim 1, wherein the
flow path forming body has a first flow path forming body that
forms a first flow path part for cooling the first power
semiconductor module, and a second flow path forming body that
forms a second flow path part for cooling the capacitor module, the
first flow path forming body is provided on a side portion of the
second flow path forming body and is integrally formed with the
second flow path forming body, the second flow path forming body
forms the second housing space above the second flow path part, the
first flow path part is formed at a position facing the wall, and
the power semiconductor module is inserted into the first flow path
part.
6. The power conversion apparatus according to claim 5, wherein the
sum of the height of the capacitor module and the height of the
second flow path part is smaller than the height of the power
semiconductor module.
7. The power conversion apparatus according to claim 1, comprising
an auxiliary power semiconductor module for driving an auxiliary
motor that is different from the motor driven by the power
semiconductor module, wherein the flow path forming body has a
first flow path forming body that forms a first flow path part for
cooling the first power semiconductor module, a second flow path
forming body that forms a second flow path part for cooling the
capacitor module, and a third flow path forming body that forms a
third flow path part for cooling the auxiliary power semiconductor
module, wherein the third flow path part is formed in such a way
that when it is projected along the arrangement direction of the
capacitor module and the second flow path part, the shadow portion
of the third flow path part does not overlap the shadow portion of
the capacitor module and the power semiconductor module, and
wherein the auxiliary power semiconductor module is provided at a
position facing the third flow path part.
8. The power conversion apparatus according to claim 1, comprising
a case for housing the power semiconductor module, the capacitor
module, and the flow path forming body, wherein the case has a void
portion so that the area surrounding the capacitor module has an
air layer.
9. The power conversion apparatus according to claim 5, wherein the
flow path forming body has a straight fin protruding to the inside
of the second flow path.
10. The power conversion apparatus according to claim 1, wherein
the power semiconductor module comprises a plurality of power
semiconductor modules, each having a rectangular shape with a side
in the longitudinal direction and a side in the short direction,
the capacitor module has a rectangular shape with a side in the
longitudinal direction and a side in the short direction, and the
plurality of power semiconductor modules are provided so that the
sides in the short direction of the power semiconductor modules are
arranged in a line along the side in the longitudinal direction of
the capacitor module.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. application Ser.
No. 14/418,985, filed Feb. 2, 2015, which is a 371 of International
Application No. PCT/JP2013/069581, filed Jul. 19, 2013, which
claims priority from Japanese Patent Application No. 2012-202185,
filed on Sep. 14, 2012, the disclosures of which are expressly
incorporated by reference herein.
TECHNICAL FIELD
[0002] The present invention relates to a power conversion
apparatus used to convert DC power to AC power or to convert AC
power to DC power, and more particularly to a power conversion
apparatus used for hybrid electric vehicles and electric
vehicles.
BACKGROUND ART
[0003] In general, a power conversion apparatus includes a
smoothing capacitor module for receiving DC power from a DC power
supply, an inverter circuit for receiving the DC power from the
capacitor module to generate AC power, and a control circuit for
controlling the inverter circuit. In recent years, it has been
required for high output in a power conversion apparatus. In
particular, in the field of hybrid electric vehicles and electric
vehicles, the operating time using a motor as a drive source, as
well as the operating conditions (high output torque conditions)
tend to increase. Thus, the DC power supplied from the DC power
supply to the power conversion apparatus tends to increase as well.
The greater the DC power supplied from the DC power supply, the
greater the heat generated in a capacitor cell and a bus bar that
are provided in the capacitor module.
[0004] Japanese Unexamined Patent Application Publication No.
2009-219270 discloses an example of a power conversion apparatus in
which a flow path is formed to surround a capacitor module, in
order to improve the cooling performance of the capacitor
module.
[0005] However, there is a demand for further improvement of the
cooling performance of the capacitor module.
CITATION LIST
Patent Literature
[0006] Patent Literature 1: Japanese Unexamined Patent Application
Publication No. 2009-219270
SUMMARY OF INVENTION
Technical Problem
[0007] An object of the present invention is to improve the cooling
performance of a capacitor module used in a power conversion
apparatus.
Solution to Problem
[0008] In order to solve the above problem, a power conversion
apparatus according to the present invention includes a flow path
forming body for cooling a power semiconductor module and a
capacitor module. The flow path forming body forms a housing space
for housing the capacitor module above a second flow path part to
cool the capacitor module. Then, a first flow path part is formed
at a position facing the side wall that forms the housing
space.
[0009] Because of this structure, the capacitor module is cooled by
the bottom and side surfaces of the capacitor module, so that the
cooling performance of the capacitor module is improved.
Advantageous Effects of Invention
[0010] According to the present invention, it is possible to
improve the cooling performance of the capacitor module.
BRIEF DESCRIPTION OF DRAWINGS
[0011] FIG. 1 is a system diagram showing a system of a hybrid
electric vehicle.
[0012] FIG. 2 is a circuit diagram showing the structure of the
electrical circuit shown in FIG. 1.
[0013] FIG. 3 is an exploded perspective view showing the structure
of a power conversion apparatus.
[0014] FIG. 4 is a perspective view of the power conversion
apparatus disassembled into components to show the overall
structure.
[0015] FIG. 5 is a view seen from the bottom side of the flow path
forming body 12 shown in FIG. 4 to show the flow path forming body
12.
[0016] FIG. 6A is a perspective view showing the external
appearance of a power semiconductor module 300a, and FIG. 6B is a
cross-sectional view of the power semiconductor module 300a.
[0017] FIG. 7A is a perspective view, 7B is a cross-sectional view
similar to FIG. 6B taken along the cross section D as viewed from
the direction E, and FIG. 7C is a cross-sectional view of a thin
wall portion 304A before deformed due to a pressure applied to a
fin 305.
[0018] FIG. 8 are views of the power semiconductor module 300a with
a module case 304 further removed from the state shown in FIG. 7,
in which FIG. 8A is a perspective view, and FIG. 8B is a
cross-sectional view similar to FIG. 7B taken along the cross
section D as viewed from the direction E.
[0019] FIG. 9 is a perspective view of the power semiconductor
module 300a with a first sealing resin 348 and a wiring insulating
portion 608 being further removed from the state shown in FIG.
8.
[0020] FIG. 10 is a view for illustrating the assembly process of a
module primary sealant 302.
[0021] FIG. 11A is a perspective view showing the external
appearance of a capacitor module 500, and FIG. 11B is an exploded
perspective view showing the internal structure of the capacitor
module 500.
[0022] FIG. 12 is a cross-sectional view of a power conversion
apparatus 200 taken along the A-A plane in FIG. 3.
[0023] FIG. 13 is an exploded perspective view of a driver circuit
board 22 and a metal base plate 11 with a lid 8 and a control
circuit board 20 removed.
[0024] FIG. 14 is a cross-sectional perspective view taken along
the planes B in FIG. 13.
[0025] FIG. 15 is a cross-sectional view taken along the plane C of
the flow path forming body 12 shown in FIG. 5.
[0026] FIG. 16 is a top surface view of the power conversion
apparatus 200 with the lid 8, the control circuit board 20, the
metal base plate 11, and the driver circuit board 22 being
removed.
DESCRIPTION OF EMBODIMENTS
[0027] Next, an embodiment of the present invention will be
described with reference to the accompanying drawings. FIG. 1 is a
system diagram in which a power conversion apparatus according to
the present invention is applied to the so-called hybrid electric
vehicle that runs by both an engine and a motor. The power
conversion apparatus according to the present invention can be
applied not only to the hybrid electric vehicle but also the
so-called electric vehicle that runs only by a motor. Further, the
power conversion apparatus can also be used as a power conversion
apparatus for driving motors used in general industrial machinery.
However, as described above or below, in particular when the power
conversion apparatus according to the present invention is applied
to the hybrid electric vehicle and the electric vehicle, an
excellent effect can be obtained in terms of various aspects such
as downsizing and reliability. The power conversion apparatus
applied to the hybrid electric vehicle has substantially the same
structure as that of the power conversion apparatus applied to the
electric vehicle. Thus, the power conversion apparatus applied to
the hybrid electric vehicle will be described as a typical
example.
[0028] FIG. 1 is a view of a control block of a hybrid electric
vehicle (hereinafter referred to as "HEV"). An engine EGN, a motor
generator MG1, and a motor generator MG2 produce a torque for
running the vehicle. Further, the motor generator MG1 and the motor
generator MG2 have a function of not only producing a rotational
torque but also converting the mechanical energy, which is added to
the motor generator MG1 or the motor generator MG2 from the
outside, into electrical power. The motor generator MG1 or MG2 is,
for example, a synchronous machine or an induction machine. As
described above, the motor generator MG1 or MG2 also acts as a
motor or a power generator depending on the operation method.
[0029] The torque on the output side of the engine EGN and the
output torque of the motor generator MG2 are transferred to the
motor generator MG1 through a power transfer mechanism TSM. The
rotational torque from the power transfer mechanism TSM, or the
rotational torque produced by the motor generator MG1 is
transferred to wheels through a transmission TM and a deferential
gear DEF. On the other hand, in regenerative braking operation, the
rotational torque is transferred from the wheels to the motor
generator MG1. Then, the motor generator MG1 generates AC power
based on the supplied rotational torque. The generated AC power is
converted to DC power by the power conversion apparatus 200 as
described below, to charge a high voltage battery 136. Then, the
charged power is used as a traveling energy again. Further, when
the power charged in the high voltage battery 136 runs low, it is
possible to charge the battery 136 by converting the rotation
energy generated by the engine EGN into AC power by the motor
generator MG2, and by converting the AC power into DC power by the
power conversion apparatus 200. The transfer of the mechanical
energy from the engine EGN to the motor generator MG2 is performed
by the power transfer mechanism TSM.
[0030] Next, the power conversion apparatus 200 will be described.
An inverter circuit 140 and an inverter circuit 142 are
electrically coupled through the battery 136 and a DC connector
138. The power is mutually transferred between the battery 136 and
the inverter circuit 140 or 142. When the motor generator MG1 is
operated as a motor, the inverter circuit 140 generates AC power
based on the DC power supplied from the battery 136 through the DC
connector 138. Then, the inverter circuit 140 supplies the AC power
to the motor generator MG1 through an AC connector 188. The
structure of the motor generator MG1 and the inverter circuit 140
acts as a first motor generator unit. Similarly, when the motor
generator MG2 is operated as a motor, the inverter circuit 142
generates AC power based on the DC power supplied from the battery
136 through the DC connector 138. Then, the inverter circuit 142
supplies the AC power to the motor generator MG2 through an AC
terminal 159. The structure of the motor generator MG2 and the
inverter circuit 142 acts as a second motor generator unit. Both
the first motor generator unit and the second motor generator unit
are operated as motors or generators, or they are operated
differently depending on the operation state. Further, it is also
possible that one of the first and second motor generator units is
not operated and is stopped.
[0031] Note that in the present embodiment, it is possible to drive
the vehicle only by the power of the motor generator MG1 by
allowing the first motor generator unit to operate as an electrical
operation unit by the power of the battery 136. Further, in the
present embodiment, the first motor generator unit or the second
motor generator unit is allowed to act as a power generation unit
by the power of the engine EGN or the power from the wheels, to
generate power and thus the battery 136 can be charged.
[0032] The battery 136 is also used as a power supply for driving
an auxiliary motor 195. Examples of the auxiliary motor are a motor
for driving a compressor of an air conditioner, or a motor for
driving a hydraulic pump for cooling. The DC power is supplied from
the battery 136 to an auxiliary power module 350. Then, AC power is
generated by the auxiliary power module 350 and is supplied to the
auxiliary motor 195 through an AC terminal 120. Basically, the
auxiliary power module 350 has the same circuit structure and
function as the inverter circuits 140 and 142. The auxiliary power
module 350 controls the phase, frequency, and power of the
alternating current to be supplied to the auxiliary motor 195. The
capacity of the auxiliary motor 195 is smaller than the capacity of
the motor generators MG1 and MG2, so that the maximum conversion
power of the auxiliary power module 350 is smaller than that of the
respective inverter circuits 140 and 142. However, the basic
structure of the auxiliary power module 350 and the basic operation
thereof are substantially the same as those of the inverter
circuits 140 and 142 as described above. Note that the power
conversion apparatus 200 includes a capacitor module 500 for
smoothing the DC power to be supplied to the inverter circuit 140,
the inverter circuit 142, and an inverter circuit 350B.
[0033] The power conversion apparatus 200 includes a communication
connector 21 for receiving an instruction from the upper control
device, or for transmitting data showing the state to the upper
control device. Based on the instruction from the connector 21, the
power conversion apparatus 200 calculates the amount of control of
the motor generator MG1, the motor generator MG2, and the auxiliary
motor 195. Further, the power conversion apparatus 200 calculates
whether to operate as a motor or a generator. Then, the power
conversion apparatus 200 generates a control pulse based on the
calculation result, and supplies the control pulse to a driver
circuit 174 as well as a driver circuit 350A of the auxiliary power
module 350. The auxiliary power module 350 may have a dedicated
control circuit. In this case, the dedicated control circuit
generates a control pulse based on the instruction from the
connector 21, and supplies the control pulse to the driver circuit
350A of the auxiliary power module 350.
[0034] Based on the control pulse, the driver circuit 174 generates
a drive pulse for controlling the inverter circuit 140 and the
inverter circuit 142. Further, the diver circuit 350A generates a
control pulse for driving the inverter circuit 350B of the
auxiliary power module 350.
[0035] Next, the structure of the electric circuit of the inverter
circuit 140 and the inverter circuit 142 will be described with
reference to FIG. 2. Also the circuit structure of the inverter
circuit 350B of the auxiliary power module 350 shown in FIG. 1 is
basically similar to the circuit structure of the inverter circuit
140. Thus, the detailed description of the circuit structure of the
inverter circuit 350B is omitted in FIG. 2, and the inverter
circuit 140 will be described as a typical example. However, the
output power of the auxiliary power module 350 is small, so that a
semiconductor chip that forms upper and lower arms of each phase
described below, as well as a circuit connecting the particular
chip are aggregated and placed in the auxiliary power module
350.
[0036] Further, the circuit structures and operations of the
inverter circuit 140 and the inverter circuit 142 are very similar
to each other. Thus, the inverter circuit 140 will be described as
representative.
[0037] Note that an insulating gate bipolar transistor is used
below as a semiconductor element, which is hereafter referred to as
IGBT. The inverter circuit 140 includes an upper and lower arm
series circuit 150 having an IGBT 328 and diode 156 acting as an
upper arm, and an IGBT 330 and diode 166 acting as a lower arm. The
upper and lower arm series circuit 150 is provided corresponding to
each of the three phases, U phase, V phase, and W phase of the AC
power to be output.
[0038] In the present embodiment, the three phases correspond to
the respective phase windings of three phases of the armature
winding of the motor generator MG1. In each of the upper and lower
arm series circuits 150 of the three phases, AC current is output
from an intermediate electrode 168 which is a midpoint part of the
series circuit. The AC current is coupled to an AC bus bar 802
which is an AC power line to the motor generator MG1 as described
below, through the AC terminal 159 or the AC connector 188.
[0039] A collector electrode 153 of the IGBT 328 of the upper arm
is electrically coupled to a capacitor terminal 506 on the positive
electrode side of the capacitor module 500 through a positive
electrode terminal 157. Then, an emitter electrode of the IGBT 330
of the lower arm is electrically coupled to a capacitor terminal
504 on the negative electrode side of the capacitor module 500
through a negative electrode terminal 158.
[0040] The IGBT 328 includes the collector electrode 153, a signal
emitter electrode 155, and a gate electrode 154. Further, the IGBT
330 includes a collector electrode 163, a signal emitter electrode
165, and a gate electrode 164. The diode 156 is electrically
coupled between the collector electrode 153 and the emitter
electrode. Further, the diode 166 is electrically coupled between
the collector electrode 163 and the emitter electrode. A
metal-oxide-semiconductor field-effect transistor (hereinafter
referred to as MOSFET) may be used as a switching power
semiconductor element. In this case, the diode 156 and the diode
166 may not be necessary. As the switching power semiconductor
element, IGBT is suitable for the case where the DC voltage is
relatively high, and MOSFET is suitable for the case where the DC
voltage is relatively low.
[0041] The capacitor module 500 includes multiple capacitor
terminals 506 on the positive electrode side, multiple capacitor
terminals 504 on the negative electrode side, a battery positive
terminal 509, and a battery negative terminal 508. A high-voltage
DC power from the battery 136 is supplied to the battery positive
terminal 509 and the battery negative terminal 508 through the DC
connector 138. Then, the high-voltage DC power is supplied from the
multiple capacitor terminals 506 on the positive electrode side of
the capacitor module 500 and multiple capacitor terminals 504 on
the negative electrode side of the capacitor module 500, to the
inverter circuit 140, the inverter circuit 142, and the auxiliary
power module 350. On the other hand, the DC power that is converted
from the AC power by the inverter circuit 140 and the inverter
circuit 142 is supplied to the capacitor module 500 from the
capacitor terminal 506 on the positive electrode side and the
capacitor terminal 504 on the negative electrode side. Then, the DC
power is supplied to the battery 136 from the battery positive
terminal 509 and the battery negative terminal 508 through the DC
connector 138, and is accumulated in the battery 136.
[0042] A control circuit 172 includes a microcomputer (hereinafter
referred to as "Micon") for performing arithmetic processing of the
switching timing of the IGBT 328 and the IGBT 330. The information
input to the Micon includes the target torque value required for
the motor generator MG1, the current value supplied from the upper
and lower arm series circuit 150 to the motor generator MG1, and
the magnetic pole position of the rotor of the motor generator MG1.
The target torque value is based on an instruction signal output
from the upper control device not shown. The current value is
detected based on a detection signal from a current sensor 180. The
magnetic pole position is detected based on a detection signal
output from a rotary magnetic pole sensor (not shown) such as a
resolver provided in the motor generator MG1. In the present
embodiment, it is assumed that the current sensor 180 detects
current values of three phases. However, it is also possible to
detect the current values of two phases and obtain the current of
three phases by calculation.
[0043] FIG. 3 is an exploded perspective view of the power
conversion apparatus 200 as an embodiment according to the present
invention. The power conversion apparatus 200 includes a flow path
forming body 12 that functions as a case for housing power
semiconductor modules 300a to 300c and power semiconductor modules
301a to 301c described below, as well as the capacitor module 500.
Further, the power conversion apparatus 200 also includes the lid
8. Note that it is also possible to have a structure in which a
case body is provided separately from the flow path forming body 12
of the present embodiment, and the flow path forming body 12 is
housed in the case.
[0044] The lid 8 houses the circuit component of the power
conversion apparatus 200 and is fixed to the flow path forming body
12. The control circuit board 20 on which the control circuit 172
is mounted is placed in the inner upper portion of the lid 8. A
first opening 202, a third opening 204a, a fourth opening 204b, and
a fifth opening 205 are provided on the upper surface of the lid 8.
Further, a second opening 203 is provided on the side wall of the
lid 8.
[0045] The connector 21 is provided in the control circuit board
20, protruding to the outside through the first opening 202. The
negative side power line 510 and the positive side power line 512
electrically couple the DC connector 138 to the capacitor module
500 and the like, and protrude to the outside through the second
opening 203.
[0046] AC-side relay conductors 802a to 802c are connected to the
power semiconductor modules 300a to 300c, respectively, and
protrude to the outside through the third opening 204a. AC-side
relay conductors 802d to 802f are connected to the power
semiconductor modules 301a to 301c, respectively, and protrude to
the outside through the fourth opening 204b. The AC output terminal
of the auxiliary power module 350, not shown, protrudes to the
outside through the fifth opening 205.
[0047] The direction of the fitting surface of the terminal of the
connector 21, and the like, varies depending on the type of
vehicle. In particular, when it is desired to mount on a small
vehicle, it is preferable to allow the terminal to protrude
outwardly with the fitting surface upward, in terms of the
limitations in size of the engine room as well as the ease of
assembly. For example, when the power conversion apparatus 200 is
provided above the transmission TM, the workability is improved by
allowing the terminal to protrude to the side opposite to the side
on which the transmission TM is provided.
[0048] FIG. 4 is an overall exploded perspective view that helps to
understand the structure housed in the flow path forming body 12 of
the power conversion apparatus 200.
[0049] The flow path forming body 12 forms opening parts 400a to
400c and opening parts 402a to 402c that lead to the flow path
through which a cooling refrigerant flows. The opening parts 400a
to 400c are filled with the inserted power semiconductor modules
300a to 300c. Further, openings 402d to 402f are filled with the
inserted power semiconductor modules 301a to 301c.
[0050] In the flow path forming body 12, a housing space 405 for
housing the capacitor module 500 is formed on the side of the space
in which the power semiconductor modules 300a to 300c and the power
semiconductor modules 301a to 301c are housed.
[0051] The capacitor module 500 has a substantially constant
distance from the power semiconductor modules 300a to 300c and from
the power semiconductor modules 301a to 301c, so that the circuit
constant can easily be balanced between the smoothing capacitor and
the power semiconductor module circuit in each of the three phases.
Thus, it is possible to achieve a circuit structure in which the
spike voltage can easily be reduced.
[0052] By integrally forming the main structure of the flow path of
the flow path forming body 12 with the flow path forming body 12 by
casting an aluminum material, it is possible to increase the
mechanical strength of the flow path, in addition to obtaining the
cooling effect. Further, the flow path forming body 12 and the flow
path are formed into an integral structure by aluminum casting, so
that the heat transfer is increased and the cooling efficiency is
improved. Note that the power semiconductor modules 300a to 300c
and the power semiconductor modules 301a to 301c are fixed to the
flow path to complete the flow path. Then, a water leakage test is
performed on the water path. Once the water path passes the water
leakage test, it is allowed to perform the operation of mounting
the capacitor module 500, the auxiliary power module 350, and the
substrate. As described above, the flow path forming body 12 is
provided on the bottom of the power conversion apparatus 200, and
then the necessary components such as the capacitor module 500, the
auxiliary power module 350, and the substrate are fixed
sequentially from the top. Thus, the productivity and reliability
are increased.
[0053] The driver circuit board 22 is provided above the power
semiconductor modules 300a to 300c, the power semiconductor modules
301a to 301c, and the capacitor module 500. Further, the metal base
plate 11 is provided between the driver circuit board 22 and the
control circuit board 20. The metal base plate 11 has the function
of the electromagnetic shield of the circuit group mounted on the
driver circuit board 22 and the control circuit board 20, and at
the same time has the capacity to release heat generated by the
driver circuit board 22 and the control circuit board 20 to cool
down.
[0054] Further, the metal base plate 11 acts to increase the
mechanical resonant frequency of the control circuit board 20. In
other words, the screw parts for fixing the control circuit board
20 to the metal base 11 can be provided at short intervals. As a
result, the distance between the supporting points can be reduced
when mechanical vibration occurs, so that the resonant frequency
can be increased. For example, the resonant frequency of the
control circuit board 20 can be increased with respect to the
vibration frequency transferred from the transmission, so that the
control circuit board 20 is unlikely to be affected by the
vibration and the reliability is increased.
[0055] FIG. 5 is a view for illustrating the flow path forming body
12, which is seen from the bottom of the flow path forming body 12
shown in FIG. 4.
[0056] In the flow path forming body 12, an inlet pipe 13 and an
outlet pipe 14 are provided on one side wall 12a. The cooling
refrigerant flows in the direction of a flow direction 417
indicated by the dotted line, and flows to a first flow path part
19a formed along one side of the flow path forming body 12, through
the inlet pipe 13. A second flow path part 19b is connected to the
first flow path portion 19a through a return flow path part, and is
formed parallel to the first flow path part 19a. A third flow path
part 19c is connected to the second flow path part 19b through a
return flow path part, and is formed parallel to the second flow
path part 19b. A fourth flow path part 19d is connected to the
third flow path part 19c through a return flow path part, and is
formed parallel to the third flow path part 19c. A fifth flow path
part 19e is connected to the fourth flow path part 19d through a
return flow path part, and is formed parallel to the fourth flow
path part 19d. A sixth flow path part 19f is connected to the fifth
flow path part 19e through a return flow path part, and is formed
parallel to the fifth flow path part 19e. In other words, the first
to sixth flow path parts 19e to 19f are connected to form a meander
flow path.
[0057] A first flow path forming body 441 forms the first flow path
part 19a, the second flow path part 19b, the third flow path part
19c, the fourth flow path part 19d, the fifth flow path part 19e,
and the sixth flow path part 19f. The first flow path part 19a, the
second flow path part 19b, the third flow path part 19c, the fourth
flow path part 19d, the fifth flow path part 19e, and the sixth
flow path part 19f are formed larger in the depth direction than in
the width direction, respectively.
[0058] The seventh flow path part 19g leads to the sixth flow path
part 19f, and is formed at a position facing the housing space 405
of the capacitor module 500 shown in FIG. 4. A second flow path
forming body 442 forms the seventh flow path part 19g. The seventh
flow path part 19g is formed larger in the width direction than in
the depth direction.
[0059] An eighth flow path part 19h leads to the seventh flow path
part 19g, and is formed at a position facing the auxiliary power
module 350 described below. Further, the eighth flow path part 19h
is connected to the outlet pipe 14. A third flow path forming body
444 forms the eighth flow path part 19h. The eighth flow path part
19h is formed larger in the depth direction than in the width
direction.
[0060] An opening portion 404 to which all the flow path parts lead
as described above is formed on the lower surface of the flow path
forming body 12. The opening portion 404 is closed by a lower cover
420. A seal member 409 is provided between the lower cover 420 and
the flow path forming body 12 to keep air tightness.
[0061] Further, protruding portions 406a to 406f protruding to the
direction away from the flow path forming body 12 are formed in the
lower cover 420. The protruding portions 406a to 406f are provided
corresponding to the power semiconductor modules 300a to 300c and
the power semiconductor modules 301a to 301c. In other words, the
protruding portion 406a is formed facing the first flow path part
19a. The protruding portion 406b is formed facing the second flow
path part 19b. The protruding portion 406c is formed facing the
third flow path part 19c. The protruding portion 406d is formed
facing the forth flow path part 19d. The protruding portion 406e is
formed facing the fifth flow path part 19e. The protruding portion
406f is formed facing the sixth flow path part 19f.
[0062] The depth and width of the seventh flow path part 19g
greatly vary from the depth and width of the sixth flow path part
19f. In order to be able to rectify the flow of the cooling
refrigerant and to manage the flow rate in the significant change
in the shape of the flow path, it is desirable that the second flow
path forming body 442 is provided with a straight fin 447
protruding to the seventh flow path part 19g.
[0063] Similarly, the depth and width of the eighth flow path part
19h greatly vary from the depth and width of the seventh flow path
part 19g. In order to be able to rectify the flow of the cooling
refrigerant and to manage the flow rate in the significant change
in the shape of the flow path, it is desirable that the third flow
path forming body 444 is provided with a straight fin 448
protruding to the eighth flow path part 19h.
[0064] The detailed structure of the power semiconductor modules
300a to 300c used in the inverter circuit 140 will be described
with reference to FIGS. 6 to 10. The power semiconductor modules
300a to 300c have the same structure, so that the structure of the
power semiconductor module 300a will be described as
representative. Note that in FIGS. 6 to 10, a signal terminal 325U
corresponds to the gate electrode 154 and signal emitter electrode
155 disclosed in FIG. 2, and a signal terminal 325L corresponds to
the gate electrode 164 and emitter electrode 165 disclosed in FIG.
2. Further, a DC positive electrode terminal 315B is the same as
the positive electrode terminal 157 disclosed in FIG. 2, and a DC
negative electrode terminal 319B is the same as the negative
electrode terminal 158 disclosed in FIG. 2. Further, an AC terminal
320B is the same as the AC terminal 159 disclosed in FIG. 2.
[0065] FIG. 6A is a perspective view of the power semiconductor
module 300a of the present embodiment. FIG. 6B is a cross-sectional
view taken along the cross section D of the power semiconductor
module 300a of the present embodiment, as viewed from the direction
E.
[0066] FIG. 7 is a view showing the power semiconductor module
300a, in which a screw 309 and a second sealing resin 351 are
removed from the state shown in FIG. 6 to help understanding. FIG.
7A is a perspective view, and FIG. 7B is a cross-sectional view
similar to FIG. 6B taken along the cross section D as viewed from
the direction E. Further, FIG. 7C is a cross-sectional view of a
thin wall portion 304A before deformed due to a pressure applied to
the fin 305.
[0067] FIG. 8 is a view of the power semiconductor module 300a, in
which the module case 304 is further removed from the state shown
in FIG. 7. FIG. 8A is a perspective view, and FIG. 8B is a
cross-sectional view similar to FIGS. 6B and 7B taken along the
cross section D as viewed from the direction E.
[0068] FIG. 9 is a perspective view of the power semiconductor
module 300a, in which the first sealing resin 348 and the wiring
insulating portion 608 are further removed from the state shown in
FIG. 8.
[0069] FIG. 10 is a view for illustrating the assembly process of
the module primary sealant 302. The power semiconductor elements
(the IGBT 328, IGBT 330, diode 156, and diode 166) forming the
upper and lower arm series circuit 150 are fixed so as to be
sandwiched between a conductor plate 315 and a conductor plate 318
or between a conductor plate 320 and a conductor plate 319 as shown
in FIGS. 8 and 9. The conductor plate 315 and the like are sealed
by the first sealing resin 348 with the radiating surface being
exposed, and an insulation member 333 is thermally compressed to
the radiating surface. The first sealing resin 348 has a polyhedron
shape (substantially rectangular parallelepiped shape in this case)
as shown in FIG. 8.
[0070] The module primary sealant 302 sealed by the first sealing
resin 348 is inserted into the module case 304, and is thermally
compressed to the inner surface of the module case 304, which is a
CAN-type cooler, with the insulation member 333 therebetween. Here,
the CAN-type cooler is a cooler of a cylindrical shape with an
insertion opening 306 on one surface and with a bottom on the other
side. A void remaining in the interior of the module case 304 is
filled with the second sealing resin 351.
[0071] The module case 304 is formed of a member having an
electrical conductivity, for example, an aluminum alloy material
(Al, AlSi, AlSiC, Al--C, and the like). The outer periphery of the
insertion opening 306 is surrounded by a flange 304B. Further, as
shown in FIG. 6A, a first radiating surface 307A and a second
radiating surface 307B, each having an area greater than that of
the other surfaces, are provided facing each other. Then, the
respective power semiconductor elements (IGBT 328, IGBT 330, diode
156, and diode 166) are arranged so as to face the respective
radiating surfaces.
[0072] The three surfaces connecting to the opposing first and
second radiating surfaces 307A and 307B forma plane that is sealed
at a width smaller than the first and second radiating surfaces
307A and 307B. Then, the insertion opening 306 is formed on the
plane of the one remaining side. The module case 304 does not
necessarily have an exact rectangular shape, and may have rounded
corners as shown FIG. 6A.
[0073] By using the case of metal having such a shape, it is
possible to ensure the seal for the refrigerant in the flange 304B,
even if the module case 304 is inserted into the flow path through
which the refrigerant such as water or oil flows. Thus, it is
possible to prevent the cooling refrigerant from entering the
interior of the module case 304 by a simple structure. Further, the
fins 305 are uniformly formed in the opposing first and second
radiating surfaces 307A and 307B, respectively. Further, the thin
wall portion 304A whose thickness is extremely thin is formed in
the outer periphery of the first radiating surface 307A and the
second radiating surface 307B. The thickness of the thin wall
portion 304A is significantly reduced to the extent that it is
easily deformed due to a pressure applied to the fin 305, so that
the productivity after the insertion of the module primary sealant
302 is increased.
[0074] As described above, by thermally compressing the conductor
plate 315 and the like to the inner wall of the module case 304
through the insulation member 333, it is possible to reduce the
void between the conductor plate 315 and the like, and the inner
wall of the module case 304. Thus, the heat generated by the power
semiconductor element can be transferred to the fin 305
effectively. Further, by allowing the insulation member 333 to have
a certain thickness and flexibility, it is possible to absorb the
generation of thermal stress by the insulation member 333, which is
better to be used in the power conversion apparatus for the vehicle
in which the temperature change is significant.
[0075] A DC positive electrode wiring 315A and a DC negative
electrode wiring 319A, which are formed of metal, are provided on
the outside of the module case 304 to electrically couple to the
capacitor module 500. ADC positive electrode terminal 315B and a DC
negative electrode terminal 319B are formed at the tip portion of
the DC positive electrode 315A and at the tip portion of the DC
negative electrode wiring 319A, respectively. Further, an AC wiring
320A of metal is provided to supply AC power to the motor generator
MG1 or MG2. Then, an AC terminal 320B is formed at the tip portion
of the AC electrode wiring 320A. In the present embodiment, as
shown in FIG. 9, the DC positive electrode wiring 315A is connected
to the conductor plate 315, the DC negative electrode wiring 319A
is connected to the conductor plate 319, and the AC wiring 320A is
connected to the conductor plate 320.
[0076] Signal wirings 324U and 324L of metal are also provided on
the outside of the module case 304 to electrically couple to the
driver circuit 174. Then, a signal terminal 325U and a signal
terminal 325L are formed at the tip portion of the signal wiring
324U and at the tip portion of the signal wiring 324L,
respectively. In the present embodiment, as shown in FIG. 9, the
signal wiring 324U is connected to the IGBT 328 and the signal
wiring 324L is connected to the IGBT 330.
[0077] The DC positive electrode wiring 315A, the DC negative
electrode wiring 319A, the AC wiring 320A, the signal wiring 324U,
and the signal wiring 324L are integrally formed as an auxiliary
mold body 600, in such a way that they are insulated from each
other by the wiring insulating portion 608 formed by a resin
material. The wiring insulating portion 608 also acts as a support
member for supporting each wiring. A thermosetting or thermoplastic
resin with insulation properties is suitable for the resin material
used for the wiring insulating portion 608. In this way, it is
possible to ensure insulation between each of the DC positive
electrode wiring 315A, the DC negative electrode wiring 319A, the
AC wiring 320A, the signal wiring 324U, and the signal wiring 324L.
As a result, high density wiring can be achieved.
[0078] The auxiliary module body 600 is bonded with a metal in the
module primary sealant 302 and a connection part 370. Then, the
auxiliary module body 600 is fixed to the module case 304 by the
screw 309 passing through a screw hole provided in the wiring
insulating portion 608. For example, TIG welding can be used in the
metal bonding of the module primary sealant 302 and the auxiliary
mold body 600 in the connection part 370.
[0079] The DC positive electrode wiring 315A and the DC negative
electrode wiring 319A are laminated face to face with the wiring
insulating portion 608 interposed therebetween, and are of a shape
extending substantially parallel to each other. Because of the
arrangement and shape described above, the current that
instantaneously flows in the switching operation of the power
semiconductor element is oppositely oriented and flows in the
opposite direction. In this way, the magnetic fields generated by
the current act to cancel each other out, so that low inductance
can be achieved by this action. Note that the AC wiring 320A and
the signal terminals 325U and 325L also extend in the same
direction as the direction of the DC positive electrode wiring 315A
and the DC negative electrode wiring 319A.
[0080] The connection part 370 in which the module primary sealant
302 and the auxiliary mold body 600 are bonded with a metal is
sealed within the module case 304 by the second sealing resin 351.
In this way, it is possible to stably ensure the required
insulation distance between the connection part 370 and the module
case 304. Thus, the reduction in size of the power semiconductor
module 300a can be achieved as compared to the case where the
connection part 370 is not sealed.
[0081] As shown in FIG. 9, an auxiliary module-side DC positive
electrode connection terminal 315C, an auxiliary module-side DC
negative electrode connection terminal 319C, an auxiliary
module-side AC connection terminal 320C, an auxiliary module-side
signal connection terminal 326U, and an auxiliary module-side
signal connection terminal 326L are arranged in a line in the
connection part 370 on the side of the auxiliary mold body 600. On
the other hand, an element-side DC positive electrode connection
terminal 315D, an element-side DC negative electrode connection
terminal 319D, an element-side AC connection terminal 320D, an
element-side signal connection terminal 327U, and an element-side
signal connection terminal 327L are arranged in a line along one
surface of the first sealing resin 348 having a polyhedron shape,
in the connection part 370 on the side of the module primary
sealant 302. By configuring the connection part 370 in which the
respective terminals are arranged in a line, it is easy to produce
the module primary sealant 302 by transfer molding.
[0082] Here, the positional relationship between the respective
terminals will be described, in which the portion extending outward
from the first sealing resin 348 of the module primary sealant 302
is viewed as a terminal for each type. In the following
description, the terminal formed by the DC positive electrode
wiring 315A (including the DC positive electrode terminal 315B and
the auxiliary module-side DC positive electrode connection terminal
315C) and the element-side DC positive electrode terminal 315D is
referred to as the positive terminal. Further, the terminal formed
by the DC negative electrode wiring 319A (including the DC negative
electrode terminal 319B and the auxiliary module-side DC negative
electrode connection terminal 319C) and the element-side DC
positive electrode connection terminal 315D is referred to as the
negative terminal. The terminal formed by the AC wiring 320A
(including the AC terminal 320B and the auxiliary module-side AC
connection terminal 320C) and the element-side AC connection
terminal 320D is referred to as the output terminal. The terminal
formed by the signal wiring 324U (including the signal terminal
325U and the auxiliary module-side signal connection terminal 326U)
and the element-side signal connection terminal 327U is referred to
as the upper arm signal terminal. Then, the terminal formed by the
signal wiring 324L (including the signal terminal 325L and the
auxiliary module-side signal connection terminal 326L) and the
element-side signal connection terminal 327L is referred to as the
lower arm signal terminal.
[0083] Each of the terminals protrudes from the first sealing resin
348 and the second sealing resin 351 through the connection part
370. The protruding portions protruding from the first sealing
resin 348 (the element-side DC positive electrode connecting
terminal 315D, the element-side DC negative electrode connection
terminal 319D, the element-side AC connection terminal 320D, the
element-side signal connection terminal 327U, and the element-side
signal connection terminal 327L) are arranged in a line along one
surface of the first sealing resin 348 having a polyhedron shape as
described above. Further, the positive terminal and the negative
terminal protrude from the second sealing resin 351 in a laminated
state, extending to the outside of the module case 304. Because of
this structure, it is possible to prevent excessive stress on the
connection part of the power semiconductor element and the
particular terminal, and to prevent the gap from being generated in
the mold, at the time of mold clamping for producing the module
primary sealant 302 by sealing the power semiconductor element by
the first sealing resin 348. Further, the opposing currents flowing
through each of the laminated positive and negative terminals
generate magnetic fluxes in the opposite directions to cancel each
other out. As a result, low inductance can be achieved.
[0084] On the side of the auxiliary module body 600, the auxiliary
module-side DC positive electrode connection terminal 315C and the
auxiliary module-side DC negative electrode connection terminal
319C are formed at the tip portions of the DC positive electrode
wiring 315A and the DC negative electrode wiring 319A on the
opposite side of the DC positive electrode terminal 315B and the DC
negative electrode terminal 319B, respectively. Further, the
auxiliary module-side AC connection terminal 320C is formed at the
tip portion of the AC wiring 320A on the opposite side of the AC
terminal 320B. The auxiliary module-side signal connection
terminals 326U, 326L are formed at the tip portions of the signal
wirings 324U, 324L on the opposite side of the signal terminals
325U, 325L, respectively.
[0085] On the other hand, on the side of the module primary sealant
302, the element-side DC positive electrode connection terminal
315D, the element-side DC negative electrode connection terminal
319D, and the element-side AC connection terminal 320D are
respectively formed in the conductor plates 315, 319, and 320.
Further, the element-side signal connection terminals 327U, 327L
are connected to the IGBTs 328, 330 by a bonding wire 371,
respectively.
[0086] As shown in FIG. 10, the DC positive side conductor plate
315 and the AC output side conductor plate 320, as well as the
element-side signal connection terminals 327U and 327L are
connected to a common tie bar 372, and are integrally formed so as
to be substantially in the same plane. A collector electrode of the
IGBT 328 on the upper arm side and a cathode electrode of the diode
156 on the upper arm side are fixed to the conductor plate 315. A
collector electrode of the IGBT 330 on the lower arm side and a
cathode electrode of the diode 166 on the lower arm side are fixed
to the conductor plate 320. The conductor plate 318 and the
conductor plate 319 are arranged so as to be substantially in the
same plane, on the IGBTs 328, 330 and the diodes 156, 166. An
emitter electrode of the IGBT 328 on the upper arm side and an
anode electrode of the diode 156 on the upper arm side are fixed to
the conductor plate 318. An emitter electrode of the IGBT 330 on
the lower arm side and an anode electrode of the diode 166 on the
lower arm side are fixed to the conductor plate 319. Each of the
power semiconductor elements is fixed to the element fixing part
322 provided in each conductor plate through the metal bonding
material 160. Examples of the metal bonding material 160 are a
solder material, silver sheet, and a low-temperature sintering
bonding material containing fine metal particles.
[0087] Each power semiconductor element has a flat plate-like
structure, and the respective electrodes of the power semiconductor
element are formed on the front and back surfaces. As shown in FIG.
10, each of the electrodes of the power semiconductor element is
sandwiched between the conductor plate 315 and the conductor plate
318, or between the conductor plate 320 and the conductor plate
319. In other words, the conductor plate 315 and the conductor
plate 318 are laminated face to face substantially in parallel to
each other through the IGBT 328 and the diode 156. Similarly, the
conductor plate 320 and the conductor plate 319 are laminated face
to face substantially in parallel to each other through the IGBT
330 and the diode 166. Further, the conductor plate 320 and the
conductor plate 318 are connected through an intermediate electrode
329. Because of this connection, the upper arm circuit and the
lower arm circuit are electrically coupled to form the upper and
lower arm series circuit. As described above, the IGBT 328 and the
diode 156 are sandwiched between the conductor plate 315 and the
conductor plate 318. At the same time, the IGBT 330 and the diode
166 are sandwiched between the conductor plate 320 and the
conductor plate 319 to connect the conductor plate 320 and the
conductor plate 318 through the intermediate electrode 329. Then,
the control electrode 328A of the IGBT 328 and the element-side
signal connection terminal 327U are connected by the bonding wire
371. At the same time, the control electrode 330A of the IGBT 330
and the element-side signal connection terminal 327L are connected
by the bonding wire 317.
[0088] FIG. 11A is a perspective view showing the external
appearance of the capacitor module 500. FIG. 11B is an explode
perspective view showing the internal structure of the capacitor
module 500. A laminated conductor plate 501 is formed by a negative
electrode conductor plate 505 and a positive electrode conductor
plate 507 that are formed by a wide plate-like conductor, as well
as an insulating sheet 550 sandwiched between the negative
electrode conductor plate 505 and the positive electrode conductor
507. The laminated conductor plate 501 allows the magnetic fluxes
to cancel each other out for the current flowing through the upper
and lower arm series circuit 150 of each phase. Thus, low
inductance can be achieved with respect to the current flowing
through the upper and lower arm series circuit 150.
[0089] The battery negative terminal 508 and the battery positive
terminal 509 are formed rising from one side in the longitudinal
direction of the laminated conductor plate 501. The battery
negative terminal 508 and the battery positive terminal 509 are
connected to the positive electrode conductor plate 507 and the
negative electrode conductor plate 505, respectively. The auxiliary
capacitor terminals 516 and 517 are formed rising from one side in
the longitudinal direction of the laminated conductor plate 501.
The auxiliary capacitor terminals 516 and 517 are connected to the
positive electrode conductor plate 507 and the negative electrode
conductor plate 505, respectively.
[0090] The relay conductor part 530 is formed rising from one side
in the longitudinal direction of the laminated conductor plate 501.
The capacitor terminals 503a to 503c protrude from the tip portion
of the relay conductor part 530. The capacitor terminals 503a to
503c are formed corresponding to the power semiconductor modules
300a to 300c, respectively. Further, capacitor terminals 503d to
503f also protrude from the tip portion of the relay conductor part
530. The capacitor terminals 503d to 503f are formed corresponding
to the power semiconductor modules 301a to 301c, respectively. All
of the relay conductor part 530 and the capacitor terminals 503a to
503c are configured in a laminated structure with the insulating
sheet 550 interposed therebetween, in order to achieve low
inductance of the current flowing through the upper and lower arm
series circuit 150. Further, the relay conductor part 530 is
configured such that the through holes and the like that may
prevent the current flow are not formed or reduced as much as
possible.
[0091] Because of this structure, the return current, which is
generated in switching between the power semiconductor modules 300a
to 300c provided for each phase, can easily flow to the relay
conductor part 530 and is unlikely to flow to the side of the
laminated conductor plate 501. Thus, it is possible to reduce the
heat generated in the laminated conductor plate 501 due to the
return current.
[0092] Note that in the present embodiment, the negative electrode
conductor plate 505, the positive electrode conductor plate 507,
the battery negative terminal 508, the battery positive terminal
509, the relay conductor part 530, and the capacitor terminals 503a
to 503f are configured by an integrally formed metal plate, and
have the effect of reducing the inductance of the current flowing
through the upper and lower arm series circuit 150.
[0093] A plurality of the capacitor cells 514 are provided below
the laminated conductor plate 501. In the present embodiment, three
capacitor cells 514 are arranged in a line along one side in the
longitudinal direction of the laminated conductor plate 501.
Further, another three capacitor cells 514 are arranged in a line
along the other side in the longitudinal direction of the laminated
conductor plate 501. Thus, six capacitor cells are provided in
total.
[0094] The capacitor cells 514, which are arranged along the
respective sides in the longitudinal direction of the laminated
conductor plate 501, are symmetrically arranged with respect to the
dotted line A-A shown in FIG. 11A. In this way, when the DC current
smoothed by the capacitor cells 514 is supplied to the power
semiconductor modules 300a to 300c and the power semiconductor
modules 301a to 301c, the current balance between the capacitor
terminals 503a to 503c and the capacitor terminals 503d to 503f is
equalized, so that the inductance of the laminated conductor plate
501 can be reduced. Further, it is possible to prevent the current
from flowing locally in the laminated conductor plate 501. Thus,
the thermal balance is equalized and the heat resistance can be
improved.
[0095] The capacitor cell 514 is a unit structure of the power
storage part of the capacitor module 500, using a film capacitor in
which two films with a metal such as aluminum deposited on one
surface are laminated and wound to form two metal layers as
positive and negative electrodes, respectively. The electrodes of
the capacitor cell 514 are produced by spraying a conductor such as
tin, in which the wound axial surfaces serve as the positive and
negative electrodes, respectively.
[0096] The capacitor case 502 includes a housing part 511 for
housing the capacitor cells 514. The housing part 511 has upper and
lower surfaces each having a substantially rectangular shape. The
capacitor case 502 includes holes 520a to 520d through which fixing
means such as screws pass to fix the capacitor module 500 to the
flow path forming body 12. The capacitor case 502 of the present
invention is formed of resin with high thermal conductivity, but
may be formed of metal or other materials.
[0097] Further, after the laminated conductor plate 501 and the
capacitor cells 514 are housed in the capacitor case 502, a filling
material 551 is filled in the capacitor case 502 so as to cover the
laminated conductor plate 501, except the capacitor terminals 503a
to 503f, the battery negative terminal 508, and the battery
positive terminal 509.
[0098] Further, capacitor cell 514 generates heat by the electric
resistance of the metal thin film deposited on the inner film as
well as the inner conductor, by the ripple current in switching.
Thus, in order to make it easy to release the heat of the capacitor
cell 514 through the capacitor case 502, the capacitor cell 514 is
molded with the filling material.
[0099] In addition, by using the filling material of resin, it is
possible to improve the moisture resistance of the capacitor cell
514.
[0100] In the present embodiment, the seventh flow path part 19g is
provided along the longitudinal direction of the housing part 511
of the capacitor module 500 (see FIG. 5), so that the cooling
efficiency is increased.
[0101] Further, a noise filter capacitor cell 515a is connected to
the positive electrode conductor plate 507 to remove a specific
noise generated between the positive electrode and the ground. A
noise filter capacitor cell 515b is connected to the negative
electrode conductor plate 505 to remove a specific noise generated
between the negative electrode and the ground. The capacity of the
respective the noise filter capacitor cells 515a and 515b is set
smaller than the capacity of the capacitor cell 514. Further, the
noise filter capacitor cells 515a and 515b are placed closer to the
battery negative terminal 508 and the battery positive terminal 509
than the capacitor terminals 503a to 503f are placed. In this way,
it is possible to remove early a specific noise that is mixed into
the battery negative terminal 508 and the battery positive-side
terminal 509. As a result, it is possible to reduce the influence
of the noise on the power semiconductor module.
[0102] FIG. 12 is a cross-sectional view of the power conversion
apparatus 200 taken along the line A-A of FIG. 3. The power
semiconductor module 300b is housed in the second flow path part
19b shown in FIG. 5. The outside wall of the module case 304 is
directly brought into contact with the cooling refrigerant flowing
through the second flow path part 19b. Similarly to the power
semiconductor module 300b, the other power semiconductor modules
300a and 300c as well as the power semiconductor modules 301a to
301c are also housed in each of the flow path parts.
[0103] The semiconductor module 300b is provided on a side portion
of the capacitor module 500. A height 540 of the capacitor module
is made smaller than a height 360 of the power semiconductor
module. Here, the height 540 of the capacitor module is the height
from a bottom portion 513 of the capacitor case 502 to the
capacitor terminal 503b. The height 360 of the power semiconductor
module is the height from the bottom portion of the module case 304
to the tip of the signal terminal 325U.
[0104] Then, the second flow path forming body 442 is provided with
the seventh flow path part 19g placed below the capacitor module
500. In other words, the seventh flow path part 19g is arranged
side by side with the capacitor module 500, along the height
direction of the power semiconductor module 300b. A height 443 of
the seventh flow path part is smaller than the difference between
the height 360 of the power semiconductor module and the height 540
of the capacitor module. Note that the height 443 of the seventh
flow path part may be equal to the difference between the height
360 of the power semiconductor module and the height 540 of the
capacitor module.
[0105] As the power semiconductor module 300b and the capacitor
module 500 are arranged adjacent to each other, the connection
distance is short, so that it is possible to achieve low inductance
and low loss.
[0106] Meanwhile, the power semiconductor module 300b and the
capacitor module 500 can be fixed and connected on the same plane,
so that it is possible to increase the ease of assembly.
[0107] Meanwhile, as the height 540 of the capacitor module is
reduced to be smaller than the height 360 of the power
semiconductor module, the seventh flow path part 19g can be
provided below the capacitor module 500, so that it is possible to
also cool the capacitor module 500. Further, the distance between
the height of the upper portion of the capacitor module 500 and the
height of the upper portion of the power semiconductor module 300b
is short, so that it is possible to prevent the length of the
capacitor terminal 503b from increasing in the height direction of
the capacitor module 500.
[0108] Meanwhile, by arranging the seventh flow path part 19g below
the capacitor module 500, it is possible to avoid the cooling flow
path from being placed on the side portion of the capacitor module
500, and to bring the capacitor module 500 and the power
semiconductor module 300b close to each other. In this way, it is
possible to prevent the wiring distance between the capacitor
module 500 and the power semiconductor module 300b from being
increased.
[0109] Further, the driver circuit board 22 is mounted with a
transformer 24 to generate a driving power of the driver circuit.
The height of the transformer 24 is greater than the height of the
circuit components mounted on the driver circuit board 22. The
signal terminal 325U and the DC positive electrode terminal 315B
are placed in the space between the driver circuit board 22 and the
power semiconductor modules 301a to 301c. Meanwhile, the
transformer 24 is placed in the space between the driver circuit
board 22 and the capacitor module 500. In this way, it is possible
to effectively use the space between the driver circuit board 22
and the capacitor module 500. Further, the circuit components with
the same heights are mounted on the surface opposite the surface on
which the driver circuit board 22 and the transformer 24 are
provided. In this way, it is possible to reduce the distance
between the driver circuit board 22 and the metal base plate
11.
[0110] FIG. 13 is an exploded perspective view of the driver
circuit board 22 and the metal base plate 11, in which the lid 8
and the control circuit board 20 are removed.
[0111] The driver circuit board 22 is placed above the power
semiconductor modules 300a to 300c and the power semiconductor
modules 301a to 301c. The metal base plate 11 is provided on the
opposite side of the power semiconductor modules 300a to 300c and
the power semiconductor modules 301a to 301c with the driver
circuit board 22 therebetween.
[0112] the driver circuit board 22 forms a through hole 22a passing
through the AC-side relay conductor 802a, a through hole 22b
passing through an AC-side relay conductor 802b, a through hole 22c
passing through the AC-side relay conductor 802c, a through hole
22d passing through an AC-side relay conductor 802d, a through hole
22e passing through an AC-side relay conductor 802e, and a through
hole 22f passing through an AC-side relay conductor 802f,
respectively. Note that in the present embodiment, a current sensor
180a is fitted into the through hole 22a, a current sensor 180c is
fitted into the through hole 22c, a current sensor 180d is fitted
into the through hole 22d, and a current sensor 180f is fitted into
the through hole 22f. However, it is also possible to provide
current sensors to all the through holes 22a to 22f.
[0113] By providing the through holes 22a to 22f in the driver
circuit board 22, it is possible to directly provide the current
sensors in the driver circuit board 22. Thus, the wiring of the
AC-side relay conductors 802a to 802f can be simplified,
contributing to downsizing.
[0114] In the metal base plate 11, a through hole 11a is formed at
a position facing the through holes 22a to 22c, and a through hole
11b is formed at a position facing the through holes 22d to 22f.
Further, as shown in FIG. 3, the lid 8 forms the third opening 204a
at a position facing the through hole 11a to form the AC connector
188. Further, the lid 8 forms the fourth opening 204b at a position
facing the through hole 11b to form the AC connector 159.
[0115] In this way, even if the driver circuit board 22 is provided
between the AC connector 188 and the power semiconductor modules
301a to 301c, it is possible to prevent the wiring of the AC-side
relay conductors 802a to 802f from being complicated. Thus,
downsizing of the power conversion apparatus 200 can be
achieved.
[0116] Further, each of the power semiconductor modules 300a to
300c and 301a to 301c has a rectangular shape with a side in the
longitudinal direction and a side in the short direction.
Similarly, the capacitor module 500 has a rectangular shape with a
side in the longitudinal direction and a side in the short
direction. Then, the power semiconductor modules 300a to 300c and
301a to 301c are arranged so that the respective sides in the short
direction are placed in a line along the longitudinal direction of
the capacitor module 500.
[0117] Because of this arrangement, the distance between the power
semiconductor modules 300a to 300c approaches, so that the distance
between the capacitor terminals 503a to 503 can be reduced. As a
result, it is possible to reduce the heat generated by the return
current flowing between the power semiconductor modules 300a to
300c. This is the same for the power semiconductor modules 301a to
301c.
[0118] A support member 803 of metal protrudes from the flow path
forming body 12 and is connected to the flow path forming body 12.
The metal base plate 11 is supported at the tip portion of the
support member 803. The flow path forming body 12 is electrically
coupled to the ground. A flow 804 of leakage current shows the flow
direction of a leakage current flowing from the driver circuit
board 22 to the metal base plate 11, the support member 803, and to
the flow path forming body 12, sequentially. Further, a flow 805 of
leakage current shows the flow direction of a leakage current
flowing from the control circuit board 20 to the metal base plate
11, the support member 803, and to the flow path forming body 12,
sequentially. In this way, the leakage current of the control
circuit board 20 and the driver circuit board 22 can flow through
the ground effectively.
[0119] As shown in FIG. 3, the control circuit board 20 is placed
facing one surface of the lid 8 that forms the first opening 202.
Then, the connector 21 is directly mounted on the control circuit
board 20, projecting to the outside through the first opening 202
formed in the lid 8. In this way, it is possible to effectively use
the space of the interior of the power conversion apparatus
200.
[0120] Further, the control circuit board 20 on which the connector
21 is mounted is fixed to the metal base plate 11. Thus, even if a
physical force is applied from the outside to the connector 21, the
load on the control circuit board 20 is reduced, so that it is
expected that the reliability including durability will be
increased.
[0121] FIG. 14 is a cross-sectional perspective view taken along
the plane B of FIG. 13. A connection part 23a is the connection
part of the signal terminal 325U of the power semiconductor module
301a and the driver circuit board 22. A connection part 23b is the
connection part of the signal terminal 325L of the power
semiconductor module 301a and the driver circuit board 22. The
connection parts 23a and 23b are formed by a solder material.
[0122] The through hole 11a of the metal base plate 11 is formed to
the position facing the connection parts 23a and 23b. Because of
this structure, it is possible to perform the connection operation
of the connection parts 23a and 23b through the through hole 11a of
the metal base plate 11, with the driver circuit board 22 fixed to
the metal base plate 11.
[0123] Further, the control circuit board 20 is arranged in such a
way that when it is projected from the upper surface of the power
conversion apparatus 200, the projected portion of the control
circuit board 20 does not overlap the projected portion of the
through hole 11a. Because of this arrangement, the control circuit
board 20 does not interfere with the connection operation of the
connection parts 23a and 23b. At the same time, the control circuit
board 20 can reduce the influence of the electromagnetic noise from
the connection parts 23a and 23b.
[0124] FIG. 15 is a cross-sectional view taken along the plane C of
the flow path forming body 12 shown in FIG. 5. The flow path
forming body 12 integrally forms the first flow path forming body
441 that forms the first to sixth flow path parts 19a to 19f, and
the second flow path forming body 442 that forms the seventh flow
path part 19g. The first flow path forming body 441 is provided on
a side portion of the second path forming body 442. The second flow
path forming body 442 forms the housing space 405 for housing the
capacitor module 500 above the seventh flow path part 19g. Further,
the flow path forming body 12 has a wall 445 for forming the side
wall of the housing space 405 as well as a part of the seventh flow
path part 19g. In other words, the first to sixth flow path parts
19a to 19f are formed at a position facing the wall 445.
[0125] In this way, not only the bottom of the capacitor module 500
is cooled by the seventh flow path part 19g, but also the side
surface in the height direction of the capacitor module 500 is
cooled by the first to sixth flow path parts 19a to 19f. As a
result, the cooing performance of the capacitor module 500 is
improved.
[0126] Further, the wall 445 forms a part of the housing space 405,
a part of the seventh flow path part 19g, and a part of the fourth
flow path part 19d. Because of this structure, the housing space to
be cooled can be divided by the wall 445, so that it is possible to
cool down in the unit of module in each of the capacitor module and
the power semiconductor module. As a result, it is possible to
select the priority of the space to be cooled for each housing
space.
[0127] Further, the flow path forming body 12 integrally forms the
first flow path forming body 441, the second flow path forming body
442, and the third flow path forming body 444 that forms the eighth
flow path part 19h. The third flow path forming body 444 is
provided on a side portion of the second flow path forming body
442. The flow path forming body 12 has a wall 460 for forming the
side wall of the housing space 405 and a part of the eighth flow
path part 19h. In other words, the eighth flow path part 19h is
formed at a position facing the wall 460. Because of this
structure, not only the bottom of the capacitor module 500 is
cooled by the seventh flow path part 19h, but also the side surface
in the height direction of the capacitor module 500 is cooled by
the eighth flow path part 19h. Thus, the cooling performance of the
capacitor module 500 is further increased.
[0128] Further, the flow path forming body 12 is integrally formed
with the third flow path forming body 444 that forms the eighth
flow path part 19h, in order to further simplify the structure.
[0129] Further, as shown in FIG. 12, the capacitor terminals 503a
to 503f are formed over the upper portion of the wall 445. In this
way, it is possible to reduce the influence of the heat transferred
between the capacitor module and the power semiconductor
module.
[0130] Note that, as shown in FIG. 12, an insulating member 446 is
provided in an upper end of the wall 445 and is brought into
contact with the relay conductor part 530 shown in FIG. 11. In this
way, it is possible to further reduce the influence of the heat
transferred between the capacitor module and the power
semiconductor module.
[0131] FIG. 16 is an upper surface view of the power conversion
apparatus 200, in which the lid 8, the control circuit board 20,
the metal base plate 11, and the driver circuit board 22 are
removed.
[0132] When the power conversion apparatus 200 is projected from
the upper surface, reference numeral 441s indicates the projected
portion of the first flow path forming body 441, 442s indicates the
projected portion of the second flow path forming body 442, and
444s indicates the projected portion of the third flow path forming
body 444. The auxiliary power module 350 is arranged so as to
overlap the projected portion 444s of the third flow path forming
body 444. In this way, it is possible to cool the auxiliary power
module 350 by the cooling refrigerant flowing through the eighth
flow path part 19h.
[0133] Further, the first flow path forming body 441 and the second
flow path forming body 442 are arranged facing a side wall 12b,
side wall 12b, side wall 12c, and side wall 12d of the flow path
forming body 12 through a void portion 12e with an air layer. In
this way, even if there is a difference between the temperature of
the cooling refrigerant flowing through the first flow path forming
body 441 and the second flow path forming body 442 and the external
ambient temperature, the void portion 12e serves as a heat
insulating layer to be able to prevent the first flow path forming
body 441 and the second flow path forming body 442 from being
affected by the external ambient temperature of the power
conversion apparatus 200.
LIST OF REFERENCE SIGNS
[0134] 8: lid [0135] 11: metal base plate [0136] 11a, 11b, 22a to
22f: through hole [0137] 12: flow path forming body [0138] 12a to
12d: side wall [0139] 12e: void portion [0140] 13: inlet pipe
[0141] 14: outlet pipe [0142] 19a: first flow path part [0143] 19b:
second flow path part [0144] 19c: third flow path part [0145] 19d:
fourth flow path part [0146] 19e: fifth flow path part [0147] 19f:
sixth flow path part [0148] 19g: seventh flow path part [0149] 19h:
eighth flow path part [0150] 20: control circuit board [0151] 21:
connector [0152] 22: driver circuit board [0153] 23a, 23b, 370:
connection part [0154] 24: transformer [0155] 120, 159, 320B: AC
terminal [0156] 136: battery [0157] 138: DC connector [0158] 140,
142, 350B: inverter circuit [0159] 150: upper and lower arm series
circuit [0160] 153, 163: collector electrode [0161] 154, 164: gate
electrode [0162] 155: signal emitter electrode [0163] 156, 166:
diode [0164] 157: positive electrode terminal [0165] 158: negative
electrode terminal [0166] 160: metal bonding material [0167] 165:
signal emitter electrode [0168] 168: intermediate electrode [0169]
172: control circuit [0170] 174, 350A: driver circuit [0171] 180,
180a to 180f: current sensor [0172] 188: AC connector [0173] 195:
auxiliary motor [0174] 200: power conversion apparatus [0175] 202:
first opening [0176] 203: second opening [0177] 204a: third opening
[0178] 204b: fourth opening [0179] 205: fifth opening [0180] 300a
to 300c, 301a to 301c: power semiconductor module [0181] 302:
module primary sealant [0182] 304: module case [0183] 304A: thin
wall portion [0184] 304B: flange [0185] 305: fin [0186] 306:
insertion opening [0187] 307A: first radiating surface [0188] 307B:
second radiating surface [0189] 309: screw [0190] 315, 318, 319,
320: conductor plate [0191] 315A: DC positive electrode wiring
[0192] 315B: DC positive electrode terminal [0193] 315C: auxiliary
module-side DC positive electrode connection terminal [0194] 315D:
element-side DC positive electrode connection terminal [0195] 319A:
DC negative electrode wiring [0196] 319B: DC negative electrode
terminal [0197] 319C: auxiliary module-side DC negative electrode
connection terminal [0198] 319D: element-side DC negative electrode
connection terminal [0199] 320A: AC wiring [0200] 320C: auxiliary
module-side AC connection terminal [0201] 320D: element-side AC
connection terminal [0202] 322: element fixing part [0203] 324U,
324L: signal wiring [0204] 325L, 325U: signal terminal [0205] 326L,
326U: auxiliary module-side signal connection terminal [0206] 327L,
327U: element-side signal connection terminal [0207] 328, 330: IGBT
[0208] 328A, 330A: control electrode [0209] 329: intermediate
electrode [0210] 333, 446: insulating member [0211] 348: first
sealing resin [0212] 350: auxiliary power module [0213] 351: second
sealing resin [0214] 360: height of power semiconductor module
[0215] 371: bonding wire [0216] 372: tie bar [0217] 400a to 400c,
402a to 402c, 404: opening portion [0218] 405: housing space [0219]
406a to 406f: protruding portion [0220] 407: cooling part [0221]
409: seal member [0222] 417: flow direction [0223] 420: lower cover
[0224] 441: first flow path forming body [0225] 441s: projected
portion of first flow path forming body [0226] 442: second flow
path forming body [0227] 442s: projected portion of second flow
path forming body [0228] 443: height of seventh flow path part
[0229] 444: third flow path forming body [0230] 444s: projected
portion of third flow path forming body [0231] 445, 460: wall
[0232] 447, 448: straight fin [0233] 500: capacitor module [0234]
501: laminated conductor plate [0235] 502: capacitor case [0236]
503a to 503f: capacitor terminal [0237] 504: negative side
capacitor terminal [0238] 505: negative electrode conductor plate
[0239] 506: positive side capacitor terminal [0240] 507: positive
electrode conductor plate [0241] 508: battery negative terminal
[0242] 509: battery positive terminal [0243] 510: negative side
power line [0244] 511: housing part [0245] 512: positive side power
line [0246] 513: bottom portion [0247] 514: capacitor cell [0248]
515a, 515b: noise filter capacitor cell [0249] 516, 517: auxiliary
capacitor terminal [0250] 520a to 520d: hole [0251] 530: relay
conductor part [0252] 540: height of capacitor module [0253] 550:
insulating sheet [0254] 551: filling material [0255] 600: auxiliary
mold body [0256] 608: wiring insulating portion [0257] 802: AC bus
bar [0258] 802a to 802f: AC-side relay conductor [0259] 803:
support member [0260] 804, 805: flow of leakage current [0261] DEF:
differential gear [0262] EGN: engine [0263] MG1, MG2: motor
generator [0264] TM: transmission [0265] TSM: power transfer
mechanism
* * * * *