U.S. patent application number 15/015230 was filed with the patent office on 2016-09-01 for strain sensor and method of measuring strain amount.
This patent application is currently assigned to KONICA MINOLTA, INC.. The applicant listed for this patent is KONICA MINOLTA, INC.. Invention is credited to Kazuki IKEDA, Takashi KUROSAWA, Hideo UEMURA.
Application Number | 20160252345 15/015230 |
Document ID | / |
Family ID | 56683197 |
Filed Date | 2016-09-01 |
United States Patent
Application |
20160252345 |
Kind Code |
A1 |
IKEDA; Kazuki ; et
al. |
September 1, 2016 |
STRAIN SENSOR AND METHOD OF MEASURING STRAIN AMOUNT
Abstract
A strain sensor includes a light source, a marker which is
disposed on a measuring object so that light from the light source
is reflected by or transmitted through the marker, a detector which
detects the intensity of the light from the marker, and a signal
processor which calculates a strain amount based on the detected
light intensity. The marker is a flat film including first and
second media having different refractive indexes. The second medium
is periodically arrayed in the first medium and exists
simultaneously with the first medium on a plane parallel to the
marker mounting surface. The maximum length of the second medium in
a direction parallel to the mounting surface is shorter than the
wavelength of the emitted light. The first and second media deform
in response to load in a direction parallel to the mounting
surface.
Inventors: |
IKEDA; Kazuki; (Tokyo,
JP) ; KUROSAWA; Takashi; (Tokyo, JP) ; UEMURA;
Hideo; (Tokyo, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
KONICA MINOLTA, INC. |
Tokyo |
|
JP |
|
|
Assignee: |
KONICA MINOLTA, INC.
Tokyo
JP
|
Family ID: |
56683197 |
Appl. No.: |
15/015230 |
Filed: |
February 4, 2016 |
Current U.S.
Class: |
356/33 |
Current CPC
Class: |
G01L 5/166 20130101;
G01B 11/165 20130101; G01B 11/168 20130101; G01L 1/24 20130101 |
International
Class: |
G01B 11/16 20060101
G01B011/16; G01L 1/24 20060101 G01L001/24 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 26, 2015 |
JP |
2015-036053 |
Claims
1. A strain sensor comprising: a light source which emits light; a
marker which is disposed on a surface of a measuring object in such
a way that the light emitted from the light source is reflected by
or transmitted through the marker; a detector which detects a light
intensity of the light reflected by or transmitted through the
marker; a signal processor which calculates a strain amount based
on the light intensity detected by the detector, wherein the marker
is a flat film comprising a first medium and a second medium having
different refractive indexes; the second medium is periodically
arrayed in the first medium and exists simultaneously with the
first medium on a plane parallel to a mounting surface on which the
marker is disposed; a maximum length of the second medium in a
direction parallel to the mounting surface is shorter than a
wavelength of the light emitted from the light source; and the
first medium and the second medium deform in response to a load in
a direction parallel to the mounting surface.
2. The strain sensor according to claim 1, wherein the light source
emits a plurality of types of light each of which is polarized in a
direction parallel to the mounting surface, the plurality of types
of light having different polarization directions; the detector
detects the polarization directions of the plurality of types of
light reflected by or transmitted through the marker; and the
signal processor determines a strain direction based on light
intensities and the polarization directions detected by the
detector.
3. The strain sensor according to claim 2, wherein the light source
emits first light polarized in the strain direction determined by
the signal processor and emits second light polarized in a
direction perpendicular to a polarization direction of the first
light.
4. The strain sensor according to claim 2, wherein the light source
emits the plurality of types of light having the different
polarization directions at different times.
5. The strain sensor according to claim 2, wherein the light source
comprises a plurality of light sources; and the plurality of light
sources emit the plurality of types of light having the different
polarization directions.
6. The strain sensor according to claim 2, wherein the signal
processor calculates the strain amount based on table data
indicating a correspondence relation between the light intensity
and the strain amount, the table data being prepared for each of
the polarization directions.
7. The strain sensor according to claim 1, wherein the signal
processor calculates the strain amount based on table data
indicating a correspondence relation between the light intensity
and the strain amount.
8. The strain sensor according to claim 1, wherein each of areas
for the second medium has a shape of a perfect circle in a planar
view, the perfect circle having a central axis extending in a
direction perpendicular to the mounting surface.
9. The strain sensor according to claim 1, wherein the areas for
the second medium contain gas.
10. The strain sensor according to claim 1, wherein the light
source and the detector are disposed adjacent to each other; and
the light source emits the light in a direction substantially
perpendicular to the mounting surface.
11. The strain sensor according to claim 1, wherein each of the
marker and the measuring object comprises transparent substance;
and the detector detects a spectral intensity of the light
transmitted through the marker.
12. The strain sensor according to claim 1, further comprising a
temperature measurement section which measures temperatures of the
marker and the measuring object, wherein the signal processor
calculates Young's moduli of the marker and the measuring object
based on the temperatures measured by the temperature measurement
section.
13. The strain sensor according to claim 1, wherein the light
source emits a light beam having a wavelength of 1 .mu.m or
less.
14. A method of measuring the strain amount using the strain sensor
according to claim 1, the method comprising calculating the strain
amount based on the light intensity detected by the detector.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a strain sensor and a
method of measuring a strain amount.
[0003] 2. Description of Related Art
[0004] Strain sensors have been used to measure various physical
amounts that act on measuring objects, such as displacements,
loads, and accelerations. Specifically, the strain sensors measure
strains generated on measuring objects and convert the measured
strains into physical amounts to determine the physical
amounts.
[0005] Recently, there have been wishes, regarding the strain
sensors, to measure strains generated on the whole structures for
the purpose of monitoring of the structures. That is, attention has
been riveted to strain sensors that can measure strain fields and
can measure the strains generated on measuring objects at each
area, rather than conventional strain sensors that measure strain
points.
[0006] Disclosed is a strain sensor capable of measuring strain
fields by measuring an amount of change in emission wavelength at
each area using mechanoluminescent elements that vary in emission
wavelength depending on strain amounts in response to an excitation
light (see, for example, Japanese Unexamined Patent Application
Publication No. 2014-115220).
[0007] Disclosed is measurement of strain fields using a moire
method by attaching a marker having a grating pattern to a
measuring object, photographing a displacement of the grating
pattern in response to a load with a camera or the like, and
comparing image data obtained before and after the application of
the load (see, for example, Japanese Unexamined Patent Application
Publication No. 2009-264852).
[0008] Unfortunately, measurements of strains with nanometer-scale
displacements are difficult with the techniques of Japanese
Unexamined Patent Application Publication Nos. 2014-115220 and
2009-264852.
[0009] Specifically, in order to measure strains with
nanometer-scale displacements with the technique disclosed in
Japanese Unexamined Patent Application Publication No. 2014-115220,
it is necessary to measure picometer-scale variations in emission
wavelength. However, it is very difficult to detect such small
variations in emission wavelength with existing spectroscopes.
[0010] The technique disclosed in Japanese Unexamined Patent
Application Publication No. 2009-264852 uses a camera to measure
strains, and thus the accuracy of measurement of strains depends on
the resolution of the camera. Considering the resolutions of
existing cameras, in order to measure strains by overcoming noises,
measurement of strains with micrometer-scale displacements is the
limit, and it is difficult to measure strains with even smaller
nanometer-scale displacements.
SUMMARY OF THE INVENTION
[0011] An object of the present invention, which has been made in
view of the circumstances described above, is to provide a strain
sensor and a method of measuring strain amounts that achieve
measurement of strain amounts with nanometer-scale
displacements.
[0012] To achieve the abovementioned object, a strain sensor
reflecting one aspect of the present invention includes a light
source which emits light; a marker which is disposed on a surface
of a measuring object in such a way that the light emitted from the
light source is reflected by or transmitted through the marker; a
detector which detects a light intensity of the light reflected by
or transmitted through the marker; a signal processor which
calculates a strain amount based on the light intensity detected by
the detector, wherein the marker is a flat film including a first
medium and a second medium having different refractive indexes; the
second medium is periodically arrayed in the first medium and
exists simultaneously with the first medium on a plane parallel to
a mounting surface on which the marker is disposed; a maximum
length of the second medium in a direction parallel to the mounting
surface is shorter than a wavelength of the light emitted from the
light source; and the first medium and the second medium deform in
response to a load in a direction parallel to the mounting
surface.
[0013] Preferably, in the strain sensor, the light source emits a
plurality of types of light each of which is polarized in a
direction parallel to the mounting surface, the plurality of types
of light having different polarization directions; the detector
detects the polarization directions of the plurality of types of
light reflected by or transmitted through the marker; and the
signal processor determines a strain direction based on light
intensities and the polarization directions detected by the
detector.
[0014] Preferably, in the strain sensor, the light source emits
first light polarized in the strain direction determined by the
signal processor and emits second light polarized in a direction
perpendicular to a polarization direction of the first light.
[0015] Preferably, in the strain sensor, the light source emits the
plurality of types of light having the different polarization
directions at different times.
[0016] Preferably, in the strain sensor, the light source includes
a plurality of light sources; and the plurality of light sources
emit the plurality of types of light having the different
polarization directions.
[0017] Preferably, in the strain sensor, the signal processor
calculates the strain amount based on table data indicating a
correspondence relation between the light intensity and the strain
amount, the table data being prepared for each of the polarization
directions.
[0018] Preferably, in the strain sensor, the signal processor
calculates the strain amount based on table data indicating a
correspondence relation between the light intensity and the strain
amount.
[0019] Preferably, in the strain sensor, each of areas for the
second medium has a shape of a perfect circle in a planar view, the
perfect circle having a central axis extending in a direction
perpendicular to the mounting surface.
[0020] Preferably, in the strain sensor, the areas for the second
medium contain gas.
[0021] Preferably, in the strain sensor, the light source and the
detector are disposed adjacent to each other; and the light source
emits the light in a direction substantially perpendicular to the
mounting surface.
[0022] Preferably, in the strain sensor, each of the marker and the
measuring object includes transparent substance; and the detector
detects a spectral intensity of the light transmitted through the
marker.
[0023] Preferably, the strain sensor further includes a temperature
measurement section which measures temperatures of the marker and
the measuring object, wherein the signal processor calculates
Young's moduli of the marker and the measuring object based on the
temperatures measured by the temperature measurement section.
[0024] Preferably, in the strain sensor, the light source emits a
light beam having a wavelength of 1 .mu.m or less.
[0025] A method of measuring a strain amount using the strain
sensor reflecting another aspect of the present invention includes
calculating the strain amount based on the light intensity detected
by the detector.
BRIEF DESCRIPTION OF THE DRAWINGS
[0026] The above and other objects, advantages and features of the
present invention will become more fully understood from the
detailed description given hereinbelow and the appended drawings
which are given by way of illustration only, and thus are not
intended as a definition of the limits of the present invention,
and wherein:
[0027] FIG. 1 shows an outline of a strain sensor according to an
embodiment of the present invention;
[0028] FIG. 2 is a plan view of a marker;
[0029] FIG. 3 is an example cross-sectional view taken along of
FIG. 2;
[0030] FIG. 4A is a plan view of the marker before a load in the X
direction is applied to the marker;
[0031] FIG. 4B is a plan view of the marker being deformed in
response to the load in the X direction;
[0032] FIG. 4C is a plan view showing a second medium before and
after the load in the X direction is applied to the marker;
[0033] FIG. 5A is a plan view of the marker before a load in the Y
direction is applied to the marker;
[0034] FIG. 5B is a plan view of the marker being deformed in
response to the load in the Y direction;
[0035] FIG. 5C is a plan view showing a second medium before and
after the load in the Y direction is applied to the marker;
[0036] FIG. 6 shows the correspondence relation between the strain
amount and the reflected light intensity;
[0037] FIG. 7 shows an outline of a strain sensor according to a
modification of the present invention;
[0038] FIG. 8 shows reflected light intensities with respect to the
polarization directions;
[0039] FIG. 9 shows the strain direction of a second medium and the
polarization direction;
[0040] FIG. 10 shows the correspondence relation between the strain
amount and the reflected light intensity; and
[0041] FIG. 11 shows an outline of a strain sensor having multiple
light sources.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0042] Embodiments of the present invention will now be described
in detail with reference to the drawings. In the following
description, the right-left direction in FIG. 1 is referred to as X
direction, the up-down direction in FIG. 1 is referred to as Z
direction, and the direction perpendicular to the X and Z
directions (i.e., the front-back direction) is referred to as Y
direction.
[0043] A strain sensor 1 of this embodiment is a sensor that can
optically measure strain fields generated on measuring objects W.
As shown in FIG. 1, the strain sensor 1 includes a light source 2;
a marker 3 to be fixed to the upper surface of a measuring object W
disposed under the light source 2 in the Z direction in such a way
that the marker 3 reflects the light from the light source 2; a
detector 4 to be disposed over a measuring object W in the Z
direction to detect the light reflected by the marker 3; and a
signal processor 5 to measure strains of a measuring object W based
on the light detected by the detector 4.
[0044] The light source 2 emits a non-polarizing light beam
(incident light 21) toward the marker 3 that is fixed below. The
light source 2 emits a light beam having a wavelength of 1 .mu.m or
less.
[0045] The marker 3 has a nanohole array structure having
regularly-arrayed nanometer-scale uniform pores, the intensities of
light reflected by which vary depending on amounts of strains
generated in response to loads applied to the marker 3. As shown in
FIGS. 2 and 3, the marker 3 is a flat film including a first medium
31 and a second medium 32 having different refractive indexes. The
marker 3 reflects the light beam emitted from the light source
2.
[0046] The first medium 31 is a substantially square plate made of
metal, such as aluminum, gold, silver, titanium, or titanium oxide,
or resin. The first medium 31 has spaces in which the second medium
32 is disposed, each of the spaces having a shape of, in a planar
view, a perfect circle with its central axis extending in the Z
direction.
[0047] The second medium 32 is made of, for example, acrylic resin
and is formed in the shapes of, in a planar view, perfect circles
with their central axes extending in the Z direction. The second
medium 32 has the same thickness as the first medium 31 and is
periodically arrayed in the first medium 31. The semidiameter X0 of
the second medium 32 is shorter than the peak wavelength of the
light source 2.
[0048] As shown in FIGS. 4 and 5, the first medium 31 and the
second medium 32 constituting the marker 3 deform in response to a
load in a direction parallel to the fixation surface on which the
marker 3 is fixed.
[0049] For example, as shown in FIGS. 4A and 4B, the marker 3 is
displaced in the X direction in response to a load in the X
direction (X load 711) applied to the marker 3. The strain amount
.epsilon.x generated in the marker 3 in response to the X load 711
can be calculated with the mathematical expression (1):
.epsilon.x=(X1-X0)/X0, where X0 is the semidiameter of a second
medium 320 before the application of the X load 711, and where X1
is the semidiameter of a second medium 321 after the application of
the X load 711, as shown in FIG. 4C.
[0050] FIGS. 5A to 5C show that the marker 3 is displaced in the Y
direction in response to a load in the Y direction (Y load 712)
applied to the marker 3. The strain amount .epsilon.y generated in
the marker 3 in response to the Y load 712 can be calculated with
the mathematical expression (2): .epsilon.y=(Y1-Y0)/Y0, where Y0 is
the semidiameter of the second medium 320 before the application of
the Y load 712, and where Y1 is the semidiameter of the second
medium 321 after the application of the Y load 712, as shown in
FIG. 5C.
[0051] The detector 4 detects the light intensity of the light beam
(the reflected light 22) reflected by the marker 3. The intensity
of the reflected light 22 detected by the detector 4 is outputted
to the signal processor 5.
[0052] The signal processor 5 calculates the strain amount of a
measuring object W based on the intensity of the reflected light 22
outputted from the detector 4. Specifically, the signal processor 5
calculates the strain amount based on the table data (see FIG. 6)
that indicates the correspondence relation between the light
intensity and the strain amount.
[0053] The method of calculating a strain amount, generated in the
marker 3, by the strain sensor 1 according to this embodiment will
now be described with reference to FIG. 6. The measurable range of
the displacements depends on the wavelength of the light of the
light source 2 and the semidiameter X0 of the second medium 32.
Hence, setting the wavelength of the light of the light source 2
and the semidiameter X0 of the second medium on a nanometer scale
enables measurement of strain amounts with nanometer-scale
displacements. Of course, strain amounts can be measured also with
micrometer-scale or larger displacements by appropriately setting
the wavelength of the light of the light source 2, the size of the
structure, the materials, and the like.
EXAMPLES
[0054] The marker 3 used in an example had a first medium 31 and a
second medium 32. The first medium 31 had a thickness Z0 of 200 nm.
The second medium 32 had a semidiameter X0 of 200 nm and was
disposed at intervals C0 of 300 nm. The first medium 31 was made of
aluminum (Al), and the second medium 32 was made of silicon dioxide
(SiO.sup.2). The light source 2 was a light source to emit
non-polarized light having a peak wavelength of about 700 nm.
[0055] FIG. 6 shows table data indicating the correspondence
relation between the strain amount .epsilon. and the reflected
light intensity. The reflected light intensity is calculated by
"(the light quantity of the reflected light 22)/(the light quantity
of the incident light 21)". In the example, the reflected light
intensity monotonically decreases with an increase in applied load
(an increase in strain amount .epsilon.) as shown in FIG. 6. This
is because a load applied to the marker 3 deforms the second medium
32 included in the marker 3 and changes the characteristics of the
surface plasmon generating on the surface of the marker 3.
[0056] The table data shown in FIG. 6 prepared in the signal
processor 5 enables calculation of the strain amounts .epsilon.
generated in the marker 3 based on the reflected light intensities
detected by the detector 4. For example, if a reflected light
intensity detected by the detector 4 is 0.60, the strain amount
.epsilon. (.apprxeq.0.10) corresponding to the reflected light
intensity of 0.60 can be obtained in reference to the table data
shown in FIG. 6.
[0057] As described above, the strain sensor 1 according to this
embodiment includes the light source 2 which emits light, the
marker 3 to be fixed to the surface of a measuring object W to
reflect the light from the light source 2, the detector 4 which
detects the intensity of the light reflected by the marker 3, and
the signal processor 5 which calculates the strain amount based on
the intensity of the light detected by the detector 4. The marker 3
is a flat film including the first medium 31 and the second medium
32 having different refractive indexes. The second medium 32 has
the same thickness as the first medium 31 and is periodically
arrayed in the first medium 31. The maximum length of the second
medium 32 in a direction parallel to the fixation surface, on which
the marker 3 is fixed, is shorter than the wavelength of the light
emitted from the light source 2. The first medium 31 and the second
medium 32 deform in response to the load in a direction parallel to
the fixation surface on which the marker 3 is fixed.
[0058] According to the strain sensor 1 of this embodiment, the
wavelength of the light of the light source 2 and the semidiameter
of the second medium 32 are determined on a nanometer scale (for
example, the strain sensor 1 has a nanohole array structure with
regularly-arrayed nanometer-scale uniform pores on the device
surface). This enables determination of the measurable range of the
displacements on a nanometer scale and thus enables measurement of
strain amounts with nanometer-scale displacements.
[0059] Further, according to the strain sensor 1 of this
embodiment, the signal processor 5 calculates strain amounts based
on the table data indicating the correspondence relation between
the light intensity and the strain amount. This reduces
environmental errors and manufacturing errors, leading to
enhancement in detection accuracy of strain amounts.
[0060] Further, according to the strain sensor 1 of this
embodiment, each of the areas for the second medium 32 has, in a
planar view, a shape of a perfect circle with its central axis
extending in the direction perpendicular to the fixation surface on
which the marker 3 is fixed. This allows the strain sensor 1 to
have constant sensitivity to strains in all directions on the plane
and facilitates the detection of strain amounts.
[0061] Further, according to the strain sensor 1 of this
embodiment, the light source 2 emits a light beam having a
wavelength of 1 .mu.m or less. This enables determination of the
measurable range of the displacements on a nanometer scale and thus
enables accurate measurement of strain amounts with nanometer-scale
displacements.
[0062] Further, if the light wavelength of the light source 2 of
the strain sensor 1 according to this embodiment is set to 1 .mu.m
or more, the measurable range of the displacements can be
determined on a micrometer scale and thus accurate measurement of
strain amounts with micrometer-scale displacements can be
achieved.
[0063] The present invention is not limited to the embodiment
described above in detail and can be modified without departing
from the spirit of the present invention.
(Modification)
[0064] A strain sensor 1A according to a modification is different
from the strain sensor 1 of the embodiment in the configurations of
a light source 2A, a detector 4A, and a signal processor 5A as
shown in FIGS. 7 to 10. The same numerals and alphabets are
assigned to the same configurations as those of the embodiment and
the detailed explanations for such configurations are omitted for
simplicity.
[0065] As shown in FIG. 7, the light source 2A emits
linearly-polarized light beams (incident light 21A) toward a marker
3 fixed below.
[0066] The detector 4A detects the light intensities and the
polarization directions of the light beams (the reflected light
22A) reflected by the marker 3.
[0067] The signal processor 5A determines (calculates) the strain
direction and the strain amount of a measuring object W based on
the intensities and polarization directions of the reflected light
22A outputted from the detector 4A. Specifically, the signal
processor 5A determines the polarization direction having the
maximum light intensity as the strain direction of the measuring
object W, based on the light intensities and the polarization
directions of the reflected light 22A outputted from the detector
4A. The signal processor 5A then calculates the strain amount based
on table data (see FIG. 10) that indicates the correspondence
relation between the light intensity and the strain amount for the
determined strain direction.
[0068] The method of calculating a strain amount, generated in the
marker 3, by the strain sensor 1A according to the modification
will now be described with reference to FIGS. 8 to 10.
[0069] The marker 3 used in the modification had a first medium 31
and a second medium 32. The first medium 31 had a thickness Z0 of
200 nm. The second medium 32 had a semidiameter X0 of 200 nm and
was disposed at intervals C0 of 300 nm. The first medium 31 was
made of aluminum (Al), and the second medium 32 was made of silicon
dioxide (SiO.sup.2). The light source 2A was a light source to emit
linearly-polarized light having a peak wavelength of about 700 nm.
In the modification, the light source 2A emitted multiple types of
light having different polarization directions at different times,
and the light intensities of the polarization directions were
measured.
[0070] FIG. 8 shows a graph of reflected light intensities with
respect to the respective polarization directions .theta.. As shown
in FIG. 9, a polarization direction .theta. refers to the angle by
which light is polarized from the X direction on the X-Y plane. As
shown in FIG. 8, when a single-axis load is applied in any
direction on the X-Y plane, the intensity of light reflected by the
marker 3 varies depending on the polarization direction. This is
because the load causes deformation of the second medium 32 from a
perfect circle shape to an ellipse shape and the semidiameter of
the second medium 32 varies depending on the polarization
direction, leading to variation in characteristics of the surface
plasmon generated on the surface of the marker 3. Under the
conditions of the modification, the reflected light intensity
increases with an increase in semidiameter of the second medium 32.
Specifically, the strain direction of a measuring object W is the
direction that maximizes the semidiameter of the second medium 32,
and the direction that maximizes the semidiameter of the second
medium 32 is the polarization direction that has the maximum
reflected light intensity. Specifically, for example, as shown in
FIG. 8, when the reflected light intensities show the
characteristics indicating that a load is applied, the polarization
direction .theta. that maximizes the reflected light intensity is
45.degree., and thus the strain direction is determined to be
45.degree..
[0071] FIG. 10 shows table data that indicates the correspondence
relation between the strain amount and the reflected light
intensity. The table data shown in FIG. 10 is prepared for each
polarization direction (strain direction) in the signal processor
5A, thereby allowing calculation of the strain amount .epsilon.
generated in the marker 3, based on the reflected light intensities
and the polarization directions detected by the detector 4A. For
example, when light polarized in a polarization direction .theta.
is emitted to the marker 3 and the detector 4A detects the
reflected light having an intensity of 0.70, the strain amount
.epsilon. (.apprxeq.0.10) can be obtained corresponding to the
reflected light having an intensity of 0.70 by reference to the
table data of the polarization direction .theta. shown in FIG.
10.
[0072] As described above, the strain sensor 1A according to the
modification includes the light source 2A, the detector 4A, and the
signal processor 5A. The light source 2A emits multiple types of
light, each of which is polarized in a direction parallel to the
fixation surface on which the marker 3 is fixed. The multiple types
of light have different polarization directions. The detector 4A
detects the polarization directions of the light reflected by the
marker 3. The signal processor 5A determines the strain direction
based on the intensities and polarization directions of the light
detected by the detector 4A.
[0073] The strain sensor 1A according to the modification thus can
detect the reflected light intensities of multiple polarization
directions and can determine the direction having the maximum
strain (maximum-strain direction) based on the differences in
reflected light intensities of the polarization directions.
Further, the strain amount of the maximum-strain direction can be
determined based on the light intensity of the determined
maximum-strain direction.
[0074] Further, according to the strain sensor 1A of the
modification, the light source 2A emits multiple types of light
having different polarization directions at different times.
Accordingly, only a single light source 2A can measure the light
intensities of the polarization directions, leading to reductions
in sizes of the light source 2A and the detector 4A and reduction
in cost.
[0075] Further, according to the strain sensor 1A of the
modification, the signal processor 5A calculates a strain amount
based on the table data indicating the correspondence relation
between the light intensity and the strain amount, the table data
being prepared for each polarization direction. This reduces
environmental errors and manufacturing errors, leading to
enhancement in detection accuracy of strain amounts.
[0076] In the modification, a strain amount is calculated based on
the table data (see FIG. 10) indicating the correspondence relation
between the light intensity and the strain amount. The present
invention, however, is not limited to this. For example, the strain
amount may be calculated with a predetermined computational
expression(s) based on the light intensity detected by the detector
4A.
[0077] Further, in the modification, the signal processor 5A
determines a strain direction based on the intensities and
polarization directions of the light detected by the detector 4A.
The present invention, however, is not limited to this. For
example, after the signal processor 5A determines the strain
direction, the light source 2A may emit first light polarized in
the determined strain direction and second light polarized in the
direction perpendicular to the polarization direction of the first
light.
[0078] Such a configuration enables calculation of the length of
the major axis of the ellipse of the second medium 32 in a planar
view (i.e., the strain amount in the strain direction), calculation
of the length of the minor axis of the ellipse (i.e., the strain
amount in the direction perpendicular to the strain direction), and
calculation of the rotation angle .theta.. This enables
measurements of the strain degrees in the entire marker 3.
[0079] Further, in the modification, a single light source 2A emits
multiple types of light having different polarization directions at
different times. The present invention, however, is not limited to
this. For example, the strain sensor is like a strain sensor 1B
shown in FIG. 11 having multiple light sources 2B. The light
sources 2B may emit multiple types of light (incident light 21B)
having different polarization directions.
[0080] In this case, a detector 4B detects the intensities and
polarization directions of the light beams (reflected light 22B)
reflected by the marker 3. A signal processor 5B determines the
strain direction and strain amount of a measuring object W based on
the intensities and polarization directions of the reflected light
22B outputted from the detector 4B.
[0081] Such a configuration enables emission of multiple light
beams having different polarization directions to the marker 3.
Accordingly, a large amount of data can be obtained by a single
measurement, leading to enhancement in detection accuracy of a
strain direction and strain amount. Further, the configuration
allows determination of a strain direction and strain amount with a
single measurement and thus can reduce the measurement time.
(Other Modifications)
[0082] In the embodiment described above, a strain amount is
calculated based on the table data (see FIG. 6) that indicates the
correspondence relation between the light intensity and the strain
amount. The present invention, however, is not limited to this. For
example, the strain amount may be calculated with a predetermined
computational expression(s) based on the light intensity detected
by the detector 4.
[0083] Further, in the embodiment described above, each of the
areas for the second medium 32 has, in a planar view, a shape of a
perfect circle with its central axis extending in the Z direction
(i.e., the direction perpendicular to the fixation surface on which
the marker 3 is fixed). The present invention, however, is not
limited to this. The areas for the second medium 32 may have any
shape that has the maximum length, in a direction parallel to the
fixation surface on which the marker 3 is fixed, shorter than the
wavelength of the light emitted from the light source 2. For
example, each of the areas for the second medium 32 may have a
shape of an ellipse or a rectangle.
[0084] Further, in the embodiment described above, the second
medium 32 is made of acrylic resin. The present invention, however,
is not limited to this. For example, gas may be contained in the
areas for the second medium 32. In this case, any gas may be
hermetically-sealed or the areas for the second medium 32 may be
empty spaces where air is present to serve as the second medium
32.
[0085] Containing gas in the areas as the second medium 32 avoids
the presence of the gaps between the first medium 31 and the second
medium 32 when a displacement is generated on the marker 3.
Further, containing gas in the areas as the second medium 32
reduces the stresses that are generated due to the difference in
thermal expansion between the first medium 31 and the second medium
32 when the temperature of the marker 3 rises. Such a configuration
further enhances detection accuracy of strain amounts.
[0086] Further, in the embodiment described above, the detector 4
is disposed separately from the light source 2 as shown in FIG. 1.
The present invention, however, is not limited to this. The light
source 2 and the detector 4 may be disposed to be adjacent to each
other, and the light source 2 may emit light in the direction
substantially perpendicular to the fixation surface on which the
marker 3 is fixed.
[0087] According to such a configuration, the light beam is
incident on the marker 3 substantially perpendicular to the marker
3. This minimizes the variation in intensity of spectral components
of the light beam due to the differences in angle of incidence,
ensuring stability in detection accuracy of strain amounts.
[0088] Further, in the embodiment described above, the light beam
emitted from the light source 2 is reflected by the marker 3. The
present invention, however, is not limited to this. For example,
each of the marker 3 and the measuring object W may be made of
transparent substance, and the light beam emitted from the light
source 2 may be transmitted through the marker 3 and the measuring
object W. In this case, the detector 4 is disposed at a location to
which the light beam from the light source 2 is to travels through
the marker 3 and the measuring object W, so as to detect the
spectral intensity of the light transmitted through the marker
3.
[0089] Such a configuration enables measurement of a strain amount
using the light transmitted through the marker 3 and the measuring
object W, leading to further enhancement in detection accuracy
compared to the measurement with reflected light.
[0090] Further, a temperature measurement section may be provided
to measure the temperatures of the marker 3 and the measuring
object W, and the signal processor 5 may calculate the Young's
moduli of the marker 3 and the measuring object W based on the
temperatures measured by the temperature measurement section.
[0091] Such a configuration enables measurement values to be
corrected based on the calculated Young's moduli, leading to
further enhancement in detection accuracy of strain amounts. The
configuration enables the calculation of not only the strain
amounts but also the stresses generated by loads.
[0092] Further, in the embodiment described above, the marker 3 is
fixed to the surface of a measuring object W. The present
invention, however, is not limited to this. While it is preferred
that the marker 3 be fixed to the surface of a measuring object W
with, for example, an adhesive, the maker 3 may be put on the
surface of a measuring object W in any way. For example, the maker
3 may be placed on the surface of a measuring object W without
being fixed thereto.
[0093] Further, in the embodiment described above, the second
medium 32 has the same thickness as that of the first medium 31.
The present invention, however, is not limited to this. The first
and second media 31 and 32 do not necessarily have to have the same
thickness as long as the second medium 32 exists simultaneously
with the first medium 31 on the plane parallel to the mounting
surface on which the marker 3 is disposed. For example, the second
medium 32 may have a thickness smaller than that of the first
medium 31.
[0094] The detailed configurations and operations of the components
of the strain sensors can be modified as appropriate without
departing from the spirit of the present invention.
[0095] The strain sensors according to the embodiment and
modifications described above achieve measurement of strain amounts
with nanometer-scale displacements.
[0096] The entire disclosure of Japanese Patent Application No.
2015-036053 filed on Feb. 26, 2015 including description, claims,
drawings, and abstract are incorporated herein by reference in its
entirety.
[0097] Although various exemplary embodiments have been shown and
described, the present invention is not limited to the embodiments
shown. Therefore, the scope of the present invention is intended to
be limited solely by the scope of the claims that follow.
* * * * *