U.S. patent application number 15/137621 was filed with the patent office on 2016-08-18 for semiconductor device.
The applicant listed for this patent is Semiconductor Energy Laboratory Co., Ltd.. Invention is credited to Shinya SASAGAWA, Hideomi SUZAWA, Tetsuhiro TANAKA, Shunpei YAMAZAKI.
Application Number | 20160240690 15/137621 |
Document ID | / |
Family ID | 50474585 |
Filed Date | 2016-08-18 |
United States Patent
Application |
20160240690 |
Kind Code |
A1 |
YAMAZAKI; Shunpei ; et
al. |
August 18, 2016 |
SEMICONDUCTOR DEVICE
Abstract
A semiconductor device in which an increase in oxygen vacancies
in an oxide semiconductor layer can be suppressed is provided. A
semiconductor device with favorable electrical characteristics is
provided. A highly reliable semiconductor device is provided. A
semiconductor device includes an oxide semiconductor layer in a
channel formation region, and by the use of an oxide insulating
film below and in contact with the oxide semiconductor layer and a
gate insulating film over and in contact with the oxide
semiconductor layer, oxygen of the oxide insulating film or the
gate insulating film is supplied to the oxide semiconductor layer.
Further, a conductive nitride is used for a metal film of a source
electrode layer and a drain electrode layer, whereby diffusion of
oxygen to the metal film is suppressed.
Inventors: |
YAMAZAKI; Shunpei;
(Setagaya, JP) ; SUZAWA; Hideomi; (Atsugi, JP)
; SASAGAWA; Shinya; (Chigasaki, JP) ; TANAKA;
Tetsuhiro; (Isehara, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Semiconductor Energy Laboratory Co., Ltd. |
Atsugi-shi |
|
JP |
|
|
Family ID: |
50474585 |
Appl. No.: |
15/137621 |
Filed: |
April 25, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
14054082 |
Oct 15, 2013 |
9330909 |
|
|
15137621 |
|
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/02631 20130101;
H01L 21/02581 20130101; H01L 29/78 20130101; H01L 29/4908 20130101;
H01L 29/42384 20130101; H01L 21/02565 20130101; H01L 21/02554
20130101; H01L 29/78693 20130101; H01L 21/02617 20130101; H01L
29/78606 20130101; H01L 29/7869 20130101; H01L 29/26 20130101; H01L
21/32139 20130101; H01L 27/1225 20130101 |
International
Class: |
H01L 29/786 20060101
H01L029/786; H01L 29/423 20060101 H01L029/423; H01L 29/49 20060101
H01L029/49 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 17, 2012 |
JP |
2012-230360 |
Claims
1. (canceled)
2. A semiconductor device comprising: an oxide semiconductor layer
over a substrate; an electrode layer over and in contact with the
oxide semiconductor layer, the electrode layer comprising titanium
nitride; a gate insulating film over the oxide semiconductor layer
and the electrode layer; and a gate electrode layer over the gate
insulating film, the gate electrode layer overlapping the oxide
semiconductor layer.
3. The semiconductor device according to claim 2, further
comprising a protective insulating film over the gate electrode
layer, wherein the protective insulating film comprises silicon
nitride.
4. The semiconductor device according to claim 2, wherein the oxide
semiconductor layer comprises a crystal, and wherein a c-axis of
the crystal is parallel to a normal vector of a surface of the
oxide semiconductor layer.
5. A semiconductor device comprising: an oxide semiconductor layer
over a substrate; a first electrode layer over and in contact with
the oxide semiconductor layer; a second electrode layer over the
first electrode layer, the second electrode layer comprising
titanium nitride; a gate insulating film over the oxide
semiconductor layer and the second electrode layer; and a gate
electrode layer over the gate insulating film, the gate electrode
layer overlapping the oxide semiconductor layer, wherein the second
electrode layer is in contact with a side surface of the first
electrode layer and a top surface of the oxide semiconductor
layer.
6. The semiconductor device according to claim 5, wherein the first
electrode layer comprises at least one selected from Al, Cr, Cu,
Ta, Ti, Mo, and W.
7. The semiconductor device according to claim 5, wherein an end
portion of the first electrode layer has a step.
8. The semiconductor device according to claim 5, further
comprising a protective insulating film over the gate electrode
layer, wherein the protective insulating film comprises silicon
nitride.
9. The semiconductor device according to claim 5, wherein the oxide
semiconductor layer comprises a crystal, and wherein a c-axis of
the crystal is parallel to a normal vector of a surface of the
oxide semiconductor layer.
10. A semiconductor device comprising: an oxide insulating film
over a substrate; an oxide semiconductor layer over the oxide
insulating film; a first electrode layer over and in contact with
the oxide semiconductor layer; a second electrode layer over the
first electrode layer, the second electrode layer comprising
titanium nitride; a gate insulating film over the oxide
semiconductor layer and the second electrode layer; and a gate
electrode layer over the gate insulating film, the gate electrode
layer overlapping the oxide semiconductor layer, wherein the second
electrode layer is in contact with a side surface of the first
electrode layer, a top surface of the oxide semiconductor layer and
a top surface of the oxide insulating film.
11. The semiconductor device according to claim 10, wherein the
first electrode layer comprises at least one selected from Al, Cr,
Cu, Ta, Ti, Mo, and W.
12. The semiconductor device according to claim 10, wherein an end
portion of the first electrode layer has a step.
13. The semiconductor device according to claim 10, further
comprising a protective insulating film over the gate electrode
layer, wherein the protective insulating film comprises silicon
nitride.
14. The semiconductor device according to claim 10, wherein the
oxide semiconductor layer comprises a crystal, and wherein a c-axis
of the crystal is parallel to a normal vector of a surface of the
oxide semiconductor layer.
15. The semiconductor device according to claim 10, wherein the
gate insulating film is in contact with a side surface of the
second electrode layer, the top surface of the oxide semiconductor
layer and the top surface of the oxide insulating film.
16. The semiconductor device according to claim 10, wherein the
first electrode layer is in contact with the top surface of the
oxide insulating film.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a semiconductor device
including an oxide semiconductor and a method for fabricating the
semiconductor device.
[0003] In this specification, a "semiconductor device" refers to a
device that can function by utilizing semiconductor
characteristics; an electro-optical device, a semiconductor
circuit, and an electric device are all included in the category of
the semiconductor device.
[0004] 2. Description of the Related Art
[0005] Attention has been focused on a technique for forming a
transistor using a semiconductor thin film formed over a substrate
having an insulating surface (also referred to as a thin film
transistor (TFT)). The transistor is applied to a wide range of
electronic devices such as an integrated circuit (IC) or an image
display device (display device). A silicon-based semiconductor
material is widely known as a material for a semiconductor thin
film applicable to a transistor. As another example, an oxide
semiconductor has been attracting attention.
[0006] For example, a transistor whose active layer includes an
amorphous oxide semiconductor containing indium (In), gallium (Ga),
and zinc (Zn) is disclosed in Patent Document 1.
REFERENCE
Patent Document
[Patent Document 1] Japanese Published Patent Application No.
2006-165528
SUMMARY OF THE INVENTION
[0007] It is known that an oxygen vacancy in an oxide semiconductor
becomes a donor; thus, in the case where the oxide semiconductor is
used for a channel formation region of a transistor, an oxide
semiconductor layer including as few oxygen vacancies as possible
is preferably used.
[0008] However, even when an oxide semiconductor layer includes few
oxygen vacancies initially, oxygen vacancies will increase in
number from various causes. An increase in oxygen vacancies in an
oxide semiconductor layer causes poor electrical characteristics in
some cases; for example, the transistor becomes normally-on,
leakage current increases, or threshold voltage is shifted due to
stress application.
[0009] Therefore, an object of one embodiment of the present
invention is to provide a semiconductor device in which an increase
in oxygen vacancies in an oxide semiconductor layer can be
suppressed. Another object is to provide a semiconductor device
with favorable electrical characteristics. A further object is to
provide a highly reliable semiconductor device.
[0010] In one embodiment of the present invention, a semiconductor
device includes an oxide semiconductor layer in a channel formation
region. An oxide insulating film below and in contact with the
oxide semiconductor layer and a gate insulating film over and in
contact with the oxide semiconductor layer are used to supply
oxygen of the oxide insulating film or the gate insulating film to
the oxide semiconductor layer. Further, a conductive nitride is
used for a metal film of a source electrode layer and a drain
electrode layer, whereby diffusion or transfer of oxygen to the
metal film is suppressed. Details are described below.
[0011] One embodiment of the present invention is a semiconductor
device including an oxide insulating film; an oxide semiconductor
layer over the oxide insulating film; a first source electrode
layer and a first drain electrode layer in contact with the oxide
semiconductor layer; a second source electrode layer and a second
drain electrode layer covering the first source electrode layer and
the first drain electrode layer, respectively, and being in contact
with the oxide semiconductor layer; a gate insulating film over the
oxide insulating film, the oxide semiconductor layer, the second
source electrode layer, and the second drain electrode layer; a
gate electrode layer over the gate insulating film and in a
position overlapping with the oxide semiconductor layer; and a
protective insulating film over the gate insulating film and the
gate electrode layer. The gate insulating film is partly in contact
with the oxide insulating film in an exterior region of the second
source electrode layer and the second drain electrode layer.
[0012] Another embodiment of the present invention is a
semiconductor device including an oxide insulating film; an oxide
semiconductor layer over the oxide insulating film; a first source
electrode layer and a first drain electrode layer in contact with
the oxide semiconductor layer; a second source electrode layer and
a second drain electrode layer in contact with the first source
electrode layer and the first drain electrode layer, respectively,
and in contact with the oxide semiconductor layer; a gate
insulating film over the oxide insulating film, the oxide
semiconductor layer, the first source electrode layer, the first
drain electrode layer, the second source electrode layer, and the
second drain electrode layer; a gate electrode layer over the gate
insulating film and in a position overlapping with the oxide
semiconductor layer; and a protective insulating film over the gate
insulating film and the gate electrode layer. The gate insulating
film is partly in contact with the oxide insulating film in an
exterior region of the first source electrode layer and the first
drain electrode layer.
[0013] In each of the above structures, the first source electrode
layer and the first drain electrode layer are preferably at least
one material selected from Al, Cr, Cu, Ta, Ti, Mo, and W or an
alloy material containing any of these as a main component.
[0014] In each of the above structures, end portions of the first
source electrode layer and the first drain electrode layer
preferably have a staircase-like shape.
[0015] In each of the above structures, the second source electrode
layer and the second drain electrode layer are preferably at least
one material selected from tantalum nitride, titanium nitride, and
ruthenium or an alloy material containing any of these as a main
component.
[0016] In each of the above structures, the protective insulating
film is preferably a silicon nitride film.
[0017] In each of the above structures, it is preferable that the
oxide semiconductor layer contain a crystal, and a c-axis of the
crystal be parallel to a normal vector of a surface of the oxide
semiconductor layer.
[0018] In one embodiment of the present invention, a semiconductor
device in which an increase in oxygen vacancies in an oxide
semiconductor layer is suppressed can be provided. A semiconductor
device with favorable electrical characteristics can be provided. A
highly reliable semiconductor device can be provided.
BRIEF DESCRIPTION OF THE DRAWINGS
[0019] FIGS. 1A to 1E are cross-sectional views and a top view
which illustrate a semiconductor device.
[0020] FIGS. 2A to 2D illustrate a method for fabricating the
semiconductor device.
[0021] FIGS. 3A to 3D illustrate the method for fabricating the
semiconductor device.
[0022] FIGS. 4A and 4B illustrate the method for fabricating the
semiconductor device.
[0023] FIGS. 5A to 5C are cross-sectional views and a top view
which illustrate a semiconductor device.
[0024] FIGS. 6A to 6D illustrate a method for fabricating the
semiconductor device.
[0025] FIGS. 7A to 7D are cross-sectional views and a top view
which illustrate a semiconductor device.
[0026] FIGS. 8A and 8B illustrate a method for fabricating the
semiconductor device.
[0027] FIGS. 9A to 9C are cross-sectional views and a top view
which illustrate a semiconductor device.
[0028] FIGS. 10A to 10C are cross-sectional views and a top view
which illustrate a semiconductor device.
[0029] FIG. 11A is a cross-sectional view of a semiconductor
device, and FIG. 11B is a circuit diagram thereof.
[0030] FIG. 12A is a circuit diagram of a semiconductor device, and
FIG. 12B is a perspective view thereof.
[0031] FIG. 13 is a block diagram of a semiconductor device.
[0032] FIG. 14 is a cross-sectional view of a semiconductor
device.
[0033] FIGS. 15A to 15C are block diagrams of a semiconductor
device.
[0034] FIGS. 16A to 16C illustrate electronic devices to which
semiconductor devices can be applied.
[0035] FIGS. 17A and 17B each show SIMS analysis results of a stack
of an IGZO film and a tungsten film.
[0036] FIGS. 18A and 18B each show SIMS analysis results of a stack
of an IGZO film and a tantalum nitride film.
[0037] FIGS. 19A and 19B each show SIMS analysis results of a stack
of an IGZO film and a titanium nitride film.
[0038] FIGS. 20A and 20B show SIMS analysis results of a stack of
an IGZO film and a tantalum nitride film and SIMS analysis results
of a stack of an IGZO film and a titanium nitride film,
respectively.
[0039] FIGS. 21A and 21B show SIMS analysis results of a stack of
an IGZO film and a tantalum nitride film and SIMS analysis results
of a stack of an IGZO film and a titanium nitride film,
respectively.
[0040] FIG. 22 shows measurement results of sheet resistance of an
IGZO film with respect to an etching depth.
[0041] FIGS. 23A and 23B show measurement results of sheet
resistance of IGZO films with respect to an etching depth.
DETAILED DESCRIPTION OF THE INVENTION
[0042] Embodiments and examples are described in detail with
reference to the drawings. Note that the present invention is not
limited to the following description and it will be readily
appreciated by those skilled in the art that modes and details can
be modified in various ways without departing from the spirit and
the scope of the present invention. Therefore, the present
invention should not be limited to the descriptions of the
embodiments and examples below. Note that in structures of the
present invention described below, the same portions or portions
having similar functions are denoted by the same reference numerals
in different drawings, and description thereof is omitted in some
cases.
[0043] In this specification, functions of a "source" and a "drain"
of a transistor are sometimes replaced with each other when a
transistor of opposite polarity is used or when the direction of
current flowing is changed in circuit operation, for example. Thus,
the terms "source" and "drain" can be used to denote the drain and
the source, respectively, in this specification.
Embodiment 1
[0044] In this embodiment, a semiconductor device of one embodiment
of the present invention will be described with reference to
drawings.
[0045] FIGS. 1A, 1B, 1C, 1D, and 1E are a top view and
cross-sectional views which illustrate a transistor of one
embodiment of the present invention. FIG. 1A is the top view of the
transistor, and a cross section taken along a dashed-dotted line
X1-Y1 in FIG. 1A is illustrated in FIG. 1B. A cross section taken
along a dashed-dotted line V1-W1 in FIG. 1A is illustrated in FIG.
1C. FIG. 1D illustrates widths of components of the transistor
which are illustrated in FIG. 1B. FIG. 1E is an enlarged view of a
region 105 illustrated in FIG. 1B. Note that for simplification of
the drawing, some components in the top view in FIG. 1A are
illustrated in a see-through manner or not illustrated.
[0046] A transistor 150 illustrated in FIGS. 1A, 1B, 1C, 1D, and 1E
includes an oxide insulating film 104 formed over a substrate 102;
an oxide semiconductor layer 106 formed over the oxide insulating
film 104; a first source electrode layer 108a and a first drain
electrode layer 108b formed over the oxide semiconductor layer 106;
a second source electrode layer 110a and a second drain electrode
layer 110b formed over the first source electrode layer 108a and
the first drain electrode layer 108b, respectively; a gate
insulating film 112 formed over the oxide insulating film 104, the
oxide semiconductor layer 106, the second source electrode layer
110a, and the second drain electrode layer 110b; a gate electrode
layer 114 formed over the gate insulating film 112 and in a
position overlapping with the oxide semiconductor layer 106; and a
protective insulating film 116 formed over the gate insulating film
112 and the gate electrode layer 114. Note that another insulating
layer, another wiring, or the like may be formed over the
protective insulating film 116.
[0047] The substrate 102 is not limited to a simple supporting
substrate, and may be a substrate where another device such as a
transistor is formed. In that case, at least one of the gate
electrode layer 114, the first source electrode layer 108a, the
first drain electrode layer 108b, the second source electrode layer
110a, and the second drain electrode layer 110b of the transistor
150 may be electrically connected to the above device.
[0048] The oxide insulating film 104 can have a function of
supplying oxygen to the oxide semiconductor layer 106 as well as a
function of preventing diffusion of an impurity from the substrate
102; thus, the oxide insulating film 104 is an insulating film
containing oxygen. It is particularly preferable that the oxide
insulating film 104 be an insulating film containing excess oxygen.
An oxide insulating film containing excess oxygen refers to an
oxide insulating film from which oxygen can be released by heat
treatment or the like. The oxide insulating film containing excess
oxygen is preferably a film in which the amount of released oxygen
when converted into oxygen atoms is 1.0.times.10.sup.19
atoms/cm.sup.3 or more in thermal desorption spectroscopy analysis.
Further, excess oxygen refers to oxygen which can be transferred in
the oxide semiconductor layer, silicon oxide, or silicon oxynitride
by heat treatment, oxygen in excess of an intrinsic stoichiometric
composition, or oxygen which can fill Vo (oxygen vacancy) caused by
lack of oxygen. Oxygen released from the oxide insulating film 104
can be diffused to a channel formation region of the oxide
semiconductor layer 106, so that oxygen vacancies which might be
formed in the oxide semiconductor layer can be filled with the
oxygen. In this manner, stable electrical characteristics of the
transistor can be achieved.
[0049] Since the oxide insulating film 104 is provided in contact
with the oxide semiconductor layer 106, oxygen can be directly
diffused to the oxide semiconductor layer 106 from a lower side of
the oxide semiconductor layer 106. Moreover, since the oxide
insulating film 104 is provided in contact with the gate insulating
film 112, oxygen can be diffused to the oxide semiconductor layer
106 from an upper side of the oxide semiconductor layer 106 through
the gate insulating film 112. More specifically, oxygen released
from the oxide insulating film 104 can enter the upper side region
of the oxide semiconductor layer 106, which serves as a channel, by
being transferred from the outside of the second source electrode
layer 110a (the left side in FIG. 1B) and the outside of the second
drain electrode layer 110b (the right side in FIG. 1B) through the
gate insulating film 112. In other words, the gate insulating film
112 is partly in contact with the oxide insulating film 104 in an
exterior region of the second source electrode layer 110a and the
second drain electrode layer 110b.
[0050] Thus, the gate insulating film 112 is provided between the
protective insulating film 116, and the second source electrode
layer 110a and the second drain electrode layer 110b so that oxygen
released from the oxide insulating film 104 can be diffused to the
channel of the oxide semiconductor layer 106. Accordingly, a
material to which oxygen is not easily diffused or transferred is
used for the second source electrode layer 110a, the second drain
electrode layer 110b, and the protective insulating film 116. In
this manner, diffusion or transfer of oxygen to the source
electrode layer and the drain electrode layer at the time when
oxygen is diffused to the oxide semiconductor layer through the
gate insulating film can be suppressed.
[0051] In a transistor having such a structure, excess oxygen can
be supplied from the oxide insulating film 104 and the gate
insulating film 112 to the channel formation region of the oxide
semiconductor layer 106, whereby the transistor including the oxide
semiconductor layer 106 has normally-off characteristics with a
positive threshold voltage. Thus, it is possible to provide a
semiconductor device in which an increase in oxygen vacancies in
the oxide semiconductor layer 106 is suppressed. Further, a highly
reliable semiconductor device can be provided.
[0052] Note that in the case where the substrate 102 is a substrate
where another device is formed, the oxide insulating film 104 also
has a function as an interlayer insulating film. In that case, the
oxide insulating film 104 is preferably subjected to planarization
treatment such as chemical mechanical polishing (CMP) treatment so
as to have a flat surface.
[0053] An oxide semiconductor that can be used for the oxide
semiconductor layer 106 preferably contains at least indium (In) or
zinc (Zn). Alternatively, the oxide semiconductor preferably
contains both In and Zn. Details of a material and a formation
method which can be used for the oxide semiconductor layer 106 are
to be described in description of a method for fabricating the
transistor.
[0054] Note that stable electrical characteristics can be
effectively imparted to a transistor in which an oxide
semiconductor layer serves as a channel by reducing the
concentration of impurities in the oxide semiconductor layer to
make the oxide semiconductor layer intrinsic or substantially
intrinsic. The term "substantially intrinsic" refers to the state
where an oxide semiconductor layer has a carrier density lower than
1.times.10.sup.17/cm.sup.3, preferably lower than
1.times.10.sup.15/cm.sup.3, further preferably lower than
1.times.10.sup.13/cm.sup.3.
[0055] Further, in the oxide semiconductor layer, hydrogen,
nitrogen, carbon, silicon, and metal elements except for those of
main components are impurities. For example, hydrogen and nitrogen
form donor levels to increase the carrier density. Silicon forms
impurity levels in an oxide semiconductor layer. The impurity
levels serve as traps and might cause electrical characteristics of
the transistor to deteriorate.
[0056] The oxide semiconductor layer can be intrinsic or
substantially intrinsic under the following conditions: in SIMS
analysis, the concentration of silicon is lower than
1.times.10.sup.19 atoms/cm.sup.3, preferably lower than
5.times.10.sup.18 atoms/cm.sup.3, further preferably lower than
1.times.10.sup.18 atoms/cm.sup.3; the concentration of hydrogen is
lower than or equal to 2.times.10.sup.20 atoms/cm.sup.3, preferably
lower than or equal to 5.times.10.sup.19 atoms/cm.sup.3, further
preferably lower than or equal to 1.times.10.sup.19 atoms/cm.sup.3,
still further preferably lower than or equal to 5.times.10.sup.18
atoms/cm.sup.3; and the concentration of nitrogen is lower than
5.times.10.sup.19 atoms/cm.sup.3, preferably lower than or equal to
5.times.10.sup.18 atoms/cm.sup.3, further preferably lower than or
equal to 1.times.10.sup.18 atoms/cm.sup.3, still further preferably
lower than or equal to 5.times.10.sup.17 atoms/cm.sup.3.
[0057] In the case where the oxide semiconductor layer includes
crystals, high concentration of silicon or carbon might reduce the
crystallinity of the oxide semiconductor layer. The crystallinity
of the oxide semiconductor layer can be prevented from decreasing
when the concentration of silicon is lower than 1.times.10.sup.19
atoms/cm.sup.3, preferably lower than 5.times.10.sup.18
atoms/cm.sup.3, further preferably lower than 1.times.10.sup.18
atoms/cm.sup.3, and the concentration of carbon is lower than
1.times.10.sup.19 atoms/cm.sup.3, preferably lower than
5.times.10.sup.18 atoms/cm.sup.3, further preferably lower than
1.times.10.sup.18 atoms/cm.sup.3.
[0058] A transistor in which a highly purified oxide semiconductor
film is used for a channel formation region as described above has
an extremely low off-state current, and the off-state current
standardized on the channel width of the transistor can be as low
as several yoktoamperes per micrometer to several zeptoamperes per
micrometer.
[0059] When the density of localized levels in the film of the
oxide semiconductor which can be used for the oxide semiconductor
layer 106 is reduced, stable electrical characteristics can be
imparted to the transistor including the oxide semiconductor layer
106. Note that to impart stable electrical characteristics to the
transistor, the absorption coefficient due to the localized levels
in the oxide semiconductor layer 106, which is obtained in
measurement by a constant photocurrent method (CPM), is set lower
than 1.times.10.sup.-3/cm, preferably lower than
3.times.10.sup.-4/cm.
[0060] For the first source electrode layer 108a and the first
drain electrode layer 108b, a conductive material which is easily
bonded to oxygen can be used. For example, Al, Cr, Cu, Ta, Ti, Mo,
or W can be used. In particular, W with a high melting point is
preferably used, which allows subsequent process temperatures to be
relatively high. Note that the conductive material which is easily
bonded to oxygen includes, in its category, a material to which
oxygen is easily diffused or transferred.
[0061] When the conductive material which is easily bonded to
oxygen is in contact with the oxide semiconductor layer, a
phenomenon occurs in which oxygen of the oxide semiconductor layer
is diffused or transferred to the conductive material which is
easily bonded to oxygen. Since the fabrication process of the
transistor involves some heat treatment steps, the above phenomenon
causes generation of oxygen vacancies in a region of the oxide
semiconductor layer, which is in contact with the source electrode
or the drain electrode, and the region is changed to an n-type.
Thus, the n-type region can serve as a source or a drain of the
transistor.
[0062] However, in the case of forming a transistor with an
extremely short channel length, the n-type region which is formed
by the generation of oxygen vacancies sometimes extends in the
channel length direction of the transistor. In that case,
electrical characteristics of the transistor change; for example,
the threshold voltage is shifted or on and off of the transistor
cannot be controlled with the gate voltage (i.e., the transistor is
on). Accordingly, when a transistor with an extremely short channel
length is formed, it is not preferable that the conductive material
which is easily bonded to oxygen be used for a source electrode and
a drain electrode.
[0063] Thus, in one embodiment of the present invention, the source
electrode and the drain electrode have stacked-layer structures,
and the second source electrode layer 110a and the second drain
electrode layer 110b, which determine the channel length, are
formed using the conductive material which is not easily bonded to
oxygen. As the conductive material which is not easily bonded to
oxygen, for example, a conductive nitride such as tantalum nitride
or titanium nitride, or ruthenium is preferably used. Note that the
conductive material which is not easily bonded to oxygen includes,
in its category, a material to which oxygen is not easily diffused
or transferred.
[0064] Note that in the transistor having the structure illustrated
in FIGS. 1A to 1E, the channel length refers to a distance between
the second source electrode layer 110a and the second drain
electrode layer 110b.
[0065] By the use of the above conductive material which is not
easily bonded to oxygen for the second source electrode layer 110a
and the second drain electrode layer 110b, generation of oxygen
vacancies in the channel formation region of the oxide
semiconductor layer 106 can be suppressed, so that change of the
channel to an n-type can be suppressed. In this manner, even a
transistor with an extremely short channel length can have
favorable electrical characteristics.
[0066] In the case where the source electrode and the drain
electrode are formed using only the above conductive material which
is not easily bonded to oxygen, the contact resistance with the
oxide semiconductor layer 106 becomes too high; thus, it is
preferable that as illustrated in FIG. 1B, the first source
electrode layer 108a and the first drain electrode layer 108b be
formed over the oxide semiconductor layer 106 and the second source
electrode layer 110a and the second drain electrode layer 110b be
formed so as to cover the first source electrode layer 108a and the
first drain electrode layer 108b.
[0067] At this time, it is preferable that the oxide semiconductor
layer 106 have a large contact area with the first source electrode
layer 108a or the first drain electrode layer 108b, and the oxide
semiconductor layer 106 have a small contact area with the second
source electrode layer 110a or the second drain electrode layer
110b. The region of the oxide semiconductor layer 106, which is in
contact with the first source electrode layer 108a or the first
drain electrode layer 108b, is changed to an n-type region due to
generation of oxygen vacancies. Owing to the n-type region, the
contact resistance between the oxide semiconductor layer 106 and
the first source electrode layer 108a or the first drain electrode
layer 108b can be reduced. Accordingly, when the oxide
semiconductor layer 106 has a large contact area with the first
source electrode layer 108a or the first drain electrode layer
108b, the area of the n-type region can also be large.
[0068] Here, the above-mentioned n-type region is described with
reference to FIG. 1E. FIG. 1E is an enlarged view of the region 105
illustrated in FIG. 1B, and in the region of the oxide
semiconductor layer 106, which is in contact with the first source
electrode layer 108a, oxygen of the oxide semiconductor layer 106
is extracted to the first source electrode layer 108a side, so that
an n-type region 106a is formed. Note that the n-type region 106a
is a region of the oxide semiconductor layer 106, which includes
many oxygen vacancies. Moreover, a component of the first source
electrode layer 108a, for example, a tungsten element in the case
where a tungsten film is used for the first source electrode layer
108a enters the n-type region 106a. In addition, although not
illustrated, a mixed layer might be formed due to entry of oxygen
of the oxide semiconductor layer 106 into a region of the first
source electrode layer 108a, which is in contact with the oxide
semiconductor layer 106.
[0069] Note that although the region 105 has been described with
reference to the enlarged view illustrating the oxide semiconductor
layer 106 and the first source electrode layer 108a, the
above-described n-type region is also formed on the first drain
electrode layer 108b side of the oxide semiconductor layer 106.
[0070] Note that the n-type region 106a may be used as a source
region or a drain region in the oxide semiconductor layer 106.
[0071] Further, the conductive material which is not easily bonded
to oxygen is used for the second source electrode layer 110a and
the second drain electrode layer 110b. Thus, when the oxide
semiconductor layer 106 is supplied with oxygen of the oxide
insulating film 104 from the upper side of the oxide semiconductor
layer 106 through the gate insulating film 112, the oxygen is less
likely to be diffused or transferred to the second source electrode
layer 110a and the second drain electrode layer 110b. Accordingly,
oxygen can be favorably supplied to the oxide semiconductor layer
106.
[0072] The gate insulating film 112 can be formed using an
insulating film containing one or more of aluminum oxide, magnesium
oxide, silicon oxide, silicon oxynitride, silicon nitride oxide,
silicon nitride, gallium oxide, germanium oxide, yttrium oxide,
zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide,
and tantalum oxide. The gate insulating film 112 may be a stack of
any of the above materials.
[0073] For the gate electrode layer 114, a conductive film formed
using Al, Ti, Cr, Co, Ni, Cu, Y, Zr, Mo, Ru, Ag, Ta, W, or the like
can be used. The gate electrode layer 114 may be a stack of any of
the above materials.
[0074] It is preferable that a material to which oxygen is not
easily diffused or transferred be used for the protective
insulating film 116. Further, a material containing little hydrogen
when formed into a film is preferably used for the protective
insulating film 116. The hydrogen content of the protective
insulating film 116 is preferably lower than
5.times.10.sup.19/cm.sup.3, further preferably lower than
5.times.10.sup.18/cm.sup.3. When the hydrogen content of the
protective insulating film 116 has the above value, an off-state
current of the transistor can be low. For example, a silicon
nitride film or a silicon nitride oxide film is preferably used as
the protective insulating film 116.
[0075] Here, distances between the components are described with
reference to the cross-sectional view in FIG. 1D.
[0076] The distance (L1) between the first source electrode layer
108a and the first drain electrode layer 108b is set to 0.8 .mu.m
or longer, preferably 1.0 .mu.m or longer. In the case where L1 is
shorter than 0.8 .mu.m, influence of oxygen vacancies generated in
the channel formation region cannot be eliminated, which might
cause deterioration of the electrical characteristics of the
transistor.
[0077] Even when the distance (L2) between the second source
electrode layer 110a and the second drain electrode layer 110b is
shorter than L1, for example, 30 nm or shorter, the transistor can
have favorable electrical characteristics.
[0078] Further, when the width of the gate electrode layer 114 is
referred to as L0, L0.gtoreq.L1.gtoreq.L2 (L1 is longer than or
equal to L2 and shorter than or equal to L0) is satisfied as
illustrated in FIG. 1D so that regions can be formed in which the
gate electrode layer 114 overlaps with the source and drain
electrode layers (the first source electrode layer 108a, the second
source electrode layer 110a, the first drain electrode layer 108b,
and the second drain electrode layer 110b) with the gate insulating
film 112 provided therebetween. With the use of such a structure,
on-state characteristics (e.g., on-state current and field-effect
mobility) of a miniaturized transistor can be improved.
[0079] When the width of the oxide semiconductor layer 106 is
referred to as L3 and the width of the transistor 150 is referred
to as L4, L3 is preferably shorter than 1 .mu.m and L4 is
preferably longer than or equal to 1 .mu.m and shorter than or
equal to 2.5 .mu.m. When L3 and L4 have the respective values, the
transistor can be miniaturized.
[0080] The above is the transistor of one embodiment of the present
invention, whose structure can suppress an increase in oxygen
vacancies in the oxide semiconductor layer. Specifically, in the
transistor, oxygen can be supplied from the oxide insulating film
and the gate insulating film which are in contact with the oxide
semiconductor layer to the oxide semiconductor layer. It is thus
possible to provide a semiconductor device having favorable
electrical characteristics and high long-term reliability.
[0081] Note that this embodiment can be combined as appropriate
with any of the other embodiments and examples in this
specification.
Embodiment 2
[0082] In this embodiment, a method for fabricating the transistor
150 described in Embodiment 1 with reference to FIGS. 1A to 1E will
be described with reference to FIGS. 2A to 2D, FIGS. 3A to 3D, and
FIGS. 4A and 4B.
[0083] For the substrate 102, a glass substrate, a ceramic
substrate, a quartz substrate, a sapphire substrate, or the like
can be used. Alternatively, a single crystal semiconductor
substrate or a polycrystalline semiconductor substrate made of
silicon, silicon carbide, or the like, a compound semiconductor
substrate made of silicon germanium or the like, a
silicon-on-insulator (SOT) substrate, or the like may be used.
Still alternatively, any of these substrates further provided with
a semiconductor element may be used.
[0084] The oxide insulating film 104 can be formed by a plasma
chemical vapor deposition (CVD) method, a sputtering method, or the
like using an oxide insulating film of aluminum oxide, magnesium
oxide, silicon oxide, silicon oxynitride, silicon nitride oxide,
gallium oxide, germanium oxide, yttrium oxide, zirconium oxide,
lanthanum oxide, neodymium oxide, hafnium oxide, tantalum oxide, or
the like or a mixed material of any of these. Further, a stack of
any of the above materials may be used, and at least an upper layer
of the oxide insulating film 104, which is in contact with the
oxide semiconductor layer 106, is formed using a material
containing oxygen that might serve as a supply source of oxygen to
the oxide semiconductor layer 106.
[0085] Oxygen may be added to the oxide insulating film 104 by an
ion implantation method, an ion doping method, a plasma immersion
ion implantation method, or the like. By addition of oxygen, the
oxide insulating film 104 can further contain excess oxygen.
[0086] Then, an oxide semiconductor film is formed over the oxide
insulating film 104 by a sputtering method, a CVD method, a
molecular beam epitaxy (MBE) method, an atomic layer deposition
(ALD) method, or a pulse laser deposition (PLD) method and
selectively etched, so that the oxide semiconductor layer 106 is
formed (see FIG. 2A). Note that heating may be performed before
etching.
[0087] An oxide semiconductor that can be used for the oxide
semiconductor layer 106 preferably contains at least indium (In) or
zinc (Zn). Alternatively, the oxide semiconductor preferably
contains both In and Zn. In order to reduce fluctuations in
electrical characteristics of the transistors including the oxide
semiconductor, the oxide semiconductor preferably contains a
stabilizer in addition to In and Zn.
[0088] As a stabilizer, gallium (Ga), tin (Sn), hafnium (Hf),
aluminum (Al), zirconium (Zr), and the like can be given. As
another stabilizer, lanthanoid such as lanthanum (La), cerium (Ce),
praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu),
gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho),
erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu) can be
given.
[0089] As the oxide semiconductor, for example, any of the
following can be used: indium oxide, tin oxide, zinc oxide, an
In--Zn oxide, a Sn--Zn oxide, an Al--Zn oxide, a Zn--Mg oxide, a
Sn--Mg oxide, an In--Mg oxide, an In--Ga oxide, an In--Ga--Zn
oxide, an In--Al--Zn oxide, an In--Sn--Zn oxide, a Sn--Ga--Zn
oxide, an Al--Ga--Zn oxide, a Sn--Al--Zn oxide, an In--Hf--Zn
oxide, an In--La--Zn oxide, an In--Ce--Zn oxide, an In--Pr--Zn
oxide, an In--Nd--Zn oxide, an In--Sm--Zn oxide, an In--Eu--Zn
oxide, an In--Gd--Zn oxide, an In--Tb--Zn oxide, an In--Dy--Zn
oxide, an In--Ho--Zn oxide, an In--Er--Zn oxide, an In--Tm--Zn
oxide, an In--Yb--Zn oxide, an In--Lu--Zn oxide, an In--Sn--Ga--Zn
oxide, an In--Hf--Ga--Zn oxide, an In--Al--Ga--Zn oxide, an
In--Sn--Al--Zn oxide, an In--Sn--Hf--Zn oxide, or an In--Hf--Al--Zn
oxide.
[0090] Note that an In--Ga--Zn oxide refers to, for example, an
oxide containing In, Ga, and Zn as its main components and there is
no particular limitation on the ratio of In to Ga and Zn. The
In--Ga--Zn oxide may contain a metal element other than In, Ga, and
Zn. Further, in this specification, a film formed using an
In--Ga--Zn oxide is also referred to as an IGZO film.
[0091] Alternatively, a material represented by
InMO.sub.3(ZnO).sub.m (m>0, where m is not an integer) may be
used. Note that M represents one or more metal elements selected
from Ga, Fe, Mn, and Co. Further alternatively, a material
represented by In.sub.2SnO.sub.5(ZnO).sub.n (n>0, where n is an
integer) may be used.
[0092] Note that the oxide semiconductor film is preferably formed
by a sputtering method. As a sputtering method, an RF sputtering
method, a DC sputtering method, an AC sputtering method, or the
like can be used. In particular, a DC sputtering method is
preferably used because dust generated in the deposition can be
reduced and the film thickness can be uniform.
[0093] An oxide semiconductor film is classified roughly into a
single-crystal oxide semiconductor film and a non-single-crystal
oxide semiconductor film. The non-single-crystal oxide
semiconductor film includes any of a c-axis aligned crystalline
oxide semiconductor (CAAC-OS) film, a polycrystalline oxide
semiconductor film, a microcrystalline oxide semiconductor film, an
amorphous oxide semiconductor film, and the like.
[0094] First, a CAAC-OS film is described.
[0095] The CAAC-OS film is one of oxide semiconductor films having
a plurality of c-axis aligned crystal parts.
[0096] In a transmission electron microscope (TEM) image of the
CAAC-OS film, a boundary between crystal parts, that is, a grain
boundary is not clearly observed. Thus, in the CAAC-OS film, a
reduction in electron mobility due to the grain boundary is less
likely to occur.
[0097] According to the TEM image of the CAAC-OS film observed in a
direction substantially parallel to a sample surface
(cross-sectional TEM image), metal atoms are arranged in a layered
manner in the crystal parts. Each metal atom layer has a morphology
reflecting unevenness of a surface over which the CAAC-OS film is
formed (hereinafter, a surface over which the CAAC-OS film is
formed is referred to as a formation surface) or a top surface of
the CAAC-OS film, and is arranged in parallel to the formation
surface or the top surface of the CAAC-OS film.
[0098] In this specification and the like, a term "parallel"
indicates that the angle formed between two straight lines is
greater than or equal to -10.degree. and less than or equal to
10.degree., and accordingly also includes the case where the angle
is greater than or equal to -5.degree. and less than or equal to
5.degree.. In addition, a term "perpendicular" indicates that the
angle formed between two straight lines is greater than or equal to
80.degree. and less than or equal to 100.degree., and accordingly
includes the case where the angle is greater than or equal to
85.degree. and less than or equal to 95.degree..
[0099] On the other hand, according to the TEM image of the CAAC-OS
film observed in a direction substantially perpendicular to the
sample surface (plan TEM image), metal atoms are arranged in a
triangular or hexagonal configuration in the crystal parts.
However, there is no regularity of arrangement of metal atoms
between different crystal parts.
[0100] From the results of the cross-sectional TEM image and the
plan TEM image, alignment is found in the crystal parts in the
CAAC-OS film.
[0101] Most of the crystal parts included in the CAAC-OS film each
fit inside a cube whose one side is less than 100 nm Thus, there is
a case where a crystal part included in the CAAC-OS film fits
inside a cube whose one side is less than 10 nm, less than 5 nm, or
less than 3 nm Note that when a plurality of crystal parts included
in the CAAC-OS film are connected to each other, one large crystal
region is formed in some cases. For example, a crystal region with
an area of 2500 nm.sup.2 or more, 5 .mu.m.sup.2 or more, or 1000
.mu.m.sup.2 or more is observed in some cases in the plan TEM
image.
[0102] A CAAC-OS film is subjected to structural analysis with an
X-ray diffraction (XRD) apparatus. For example, when the CAAC-OS
film including an InGaZnO.sub.4 crystal is analyzed by an
out-of-plane method, a peak appears frequently when the diffraction
angle (2.theta.) is around 31.degree.. This peak is derived from
the (009) plane of the InGaZnO.sub.4 crystal, which indicates that
crystals in the CAAC-OS film have c-axis alignment, and that the
c-axes are aligned in a direction substantially perpendicular to
the formation surface or the top surface of the CAAC-OS film.
[0103] On the other hand, when the CAAC-OS film is analyzed by an
in-plane method in which an X-ray enters a sample in a direction
substantially perpendicular to the c-axis, a peak appears
frequently when 2.theta. is around 56.degree.. This peak is derived
from the (110) plane of the InGaZnO.sub.4 crystal. Here, analysis
(.phi. scan) is performed under conditions where the sample is
rotated around a normal vector of a sample surface as an axis (0
axis) with 2.theta. fixed at around 56.degree.. In the case where
the sample is a single-crystal oxide semiconductor film of
InGaZnO.sub.4, six peaks appear. The six peaks are derived from
crystal planes equivalent to the (110) plane. On the other hand, in
the case of a CAAC-OS film, a peak is not clearly observed even
when .phi. scan is performed with 2.theta. fixed at around
56.degree..
[0104] According to the above results, in the CAAC-OS film having
c-axis alignment, while the directions of a-axes and b-axes are
different between crystal parts, the c-axes are aligned in a
direction parallel to a normal vector of a formation surface or a
normal vector of a top surface. Thus, each metal atom layer
arranged in a layered manner and observed in the cross-sectional
TEM image corresponds to a plane parallel to the a-b plane of the
crystal.
[0105] Note that the crystal part is formed concurrently with
deposition of the CAAC-OS film or is formed through crystallization
treatment such as heat treatment. As described above, the c-axis of
the crystal is aligned in a direction parallel to a normal vector
of a formation surface or a normal vector of a top surface of the
CAAC-OS film. Thus, for example, in the case where a shape of the
CAAC-OS film is changed by etching or the like, the c-axis might
not be necessarily parallel to a normal vector of a formation
surface or a normal vector of a top surface of the CAAC-OS
film.
[0106] Further, distribution of c-axis aligned crystal parts in the
CAAC-OS film is not necessarily uniform. For example, in the case
where crystal growth leading to the crystal parts of the CAAC-OS
film occurs from the vicinity of the top surface of the film, the
proportion of the c-axis aligned crystal parts in the vicinity of
the top surface is higher than that in the vicinity of the
formation surface in some cases. Further, when an impurity is added
to the CAAC-OS film, a region to which the impurity is added is
altered, and the proportion of the c-axis aligned crystal parts in
the CAAC-OS film varies depending on regions, in some cases.
[0107] Note that when the CAAC-OS film with an InGaZnO.sub.4
crystal is analyzed by an out-of-plane method, a peak of 2.theta.
may also be observed at around 36.degree., in addition to the peak
of 2.theta. at around 31.degree.. The peak of 2.theta. at around
36.degree. indicates that a crystal having no c-axis alignment is
included in part of the CAAC-OS film. It is preferable that in the
CAAC-OS film, a peak of 2.theta. appears at around 31.degree. and a
peak of 2.theta. do not appear at around 36.degree..
[0108] The CAAC-OS film is an oxide semiconductor film having a low
concentration of impurities. The impurity is an element other than
the main components of the oxide semiconductor film, such as
hydrogen, carbon, silicon, or a transition metal element. In
particular, an element that has higher bonding strength to oxygen
than a metal element included in the oxide semiconductor film, such
as silicon, disturbs the atomic arrangement of the oxide
semiconductor film by depriving the oxide semiconductor film of
oxygen and causes a decrease in crystallinity. Further, a heavy
metal such as iron or nickel, argon, carbon dioxide, or the like
has a large atomic radius (molecular radius), and thus disturbs the
atomic arrangement of the oxide semiconductor film and causes a
decrease in crystallinity when it is contained in the oxide
semiconductor film. Note that the impurity contained in the oxide
semiconductor film might serve as a carrier trap or a carrier
generation source.
[0109] The CAAC-OS film is an oxide semiconductor film having a low
density of defect levels. In some cases, the oxygen vacancies in
the oxide semiconductor film serve as carrier traps or serve as
carrier generation sources when hydrogen is captured therein.
[0110] The state in which the concentration of impurities is low
and density of defect levels is low (the number of oxygen vacancies
is small) is referred to as a "highly purified intrinsic" or
"substantially highly purified intrinsic" state. A highly purified
intrinsic or substantially highly purified intrinsic oxide
semiconductor film has few carrier generation sources, and thus can
have a lower carrier density. Thus, a transistor including the
oxide semiconductor film rarely has electrical characteristics with
negative threshold voltage (such electrical characteristics are
also referred to as normally on). The highly purified intrinsic or
substantially highly purified intrinsic oxide semiconductor film
has few carrier traps. Accordingly, the transistor including the
oxide semiconductor film has small change in electrical
characteristics and high reliability. Electric charge trapped by
the carrier traps in the oxide semiconductor film takes a long time
to be released, and might behave like fixed electric charge. Thus,
the transistor including the oxide semiconductor film having a high
concentration of impurities and a high density of defect levels has
unstable electrical characteristics in some cases.
[0111] In a transistor including the CAAC-OS film, change in the
electrical characteristics of the transistor due to irradiation
with visible light or ultraviolet light is small.
[0112] Next, a microcrystalline oxide semiconductor film is
described.
[0113] In a TEM image of the microcrystalline oxide semiconductor
film, crystal parts sometimes cannot be found clearly. In most
cases, the size of a crystal part in the microcrystalline oxide
semiconductor film is greater than or equal to 1 nm and less than
or equal to 100 nm, or greater than or equal to 1 nm and less than
or equal to 10 nm A microcrystal with a size greater than or equal
to 1 nm and less than or equal to 10 nm, or a size greater than or
equal to 1 nm and less than or equal to 3 nm is specifically
referred to as nanocrystal (nc). An oxide semiconductor film
including nanocrystal is referred to as an nc-OS (nanocrystalline
oxide semiconductor) film. In an image of the nc-OS film obtained
with a TEM, for example, a boundary between crystal parts is not
clearly detected in some cases.
[0114] In the nc-OS film, a microscopic region (e.g., a region with
a size greater than or equal to 1 nm and less than or equal to 10
nm, in particular, a region with a size greater than or equal to 1
nm and less than or equal to 3 nm) has a periodic atomic order.
Further, there is no regularity of crystal orientation between
different crystal parts in the nc-OS film; thus, the orientation of
the whole film is not observed. Accordingly, in some cases, the
nc-OS film cannot be distinguished from an amorphous oxide
semiconductor film depending on an analysis method. For example,
when the nc-OS film is subjected to structural analysis by an
out-of-plane method with an XRD apparatus using an X-ray having a
diameter larger than that of a crystal part, a peak which shows a
crystal plane does not appear. Further, a halo pattern is shown in
a selected-area electron diffraction pattern of the nc-OS film
obtained by using an electron beam having a probe diameter (e.g.,
larger than or equal to 50 nm) larger than a diameter of a crystal
part. Meanwhile, spots are shown in a nanobeam electron diffraction
pattern of the nc-OS film obtained by using an electron beam having
a probe diameter (e.g., larger than or equal to 1 nm and smaller
than or equal to 30 nm) close to, or smaller than or equal to a
diameter of a crystal part. Further, in a nanobeam electron
diffraction pattern of the nc-OS film, regions with high luminance
in a circular (ring) pattern are shown in some cases. Also in a
nanobeam electron diffraction pattern of the nc-OS film, a
plurality of spots are shown in a ring-like region in some
cases.
[0115] Since the nc-OS film is an oxide semiconductor film having
more regularity than the amorphous oxide semiconductor film, the
nc-OS film has a lower density of defect levels than the amorphous
oxide semiconductor film. However, there is no regularity of
crystal orientation between different crystal parts in the nc-OS
film; hence, the nc-OS film has a higher density of defect levels
than the CAAC-OS film.
[0116] Note that an oxide semiconductor film may be a stacked film
including two or more films of an amorphous oxide semiconductor
film, a microcrystalline oxide semiconductor film, and a CAAC-OS
film, for example.
[0117] A CAAC-OS film can be deposited by a sputtering method using
a polycrystalline oxide semiconductor sputtering target, for
example. When ions collide with the sputtering target, a crystal
region included in the sputtering target might be separated from
the target along an a-b plane; in other words, a sputtered particle
having a plane parallel to an a-b plane (flat-plate-like sputtered
particle or pellet-like sputtered particle) might flake off from
the sputtering target. In that case, the flat-plate-like sputtered
particle reaches a substrate while maintaining its crystal state,
whereby the CAAC-OS film can be deposited.
[0118] For the deposition of the CAAC-OS film, the following
conditions are preferably employed.
[0119] By reducing the amount of impurities entering the CAAC-OS
film during the deposition, the crystal state can be prevented from
being broken by the impurities. For example, impurities (e.g.,
hydrogen, water, carbon dioxide, or nitrogen) which exist in the
deposition chamber may be reduced. Furthermore, impurities in a
deposition gas may be reduced. Specifically, a deposition gas whose
dew point is lower than or equal to -80.degree. C., preferably
lower than or equal to -100.degree. C. is used.
[0120] By increasing the substrate heating temperature during the
deposition, migration of a sputtered particle occurs after the
sputtered particle reaches the substrate. Specifically, the
substrate heating temperature during the deposition is higher than
or equal to 100.degree. C. and lower than or equal to 740.degree.
C., preferably higher than or equal to 200.degree. C. and lower
than or equal to 500.degree. C. By increasing the substrate heating
temperature during the deposition, when the flat-plate-like
sputtered particle reaches the substrate, migration occurs over the
substrate, so that a flat plane of the sputtered particle is
attached to the substrate.
[0121] Furthermore, it is preferable that the proportion of oxygen
in the deposition gas be increased and the power be optimized in
order to reduce plasma damage at the deposition. The proportion of
oxygen in the deposition gas is higher than or equal to 30 vol %,
preferably 100 vol %.
[0122] As an example of the sputtering target, an In--Ga--Zn--O
compound target is described below.
[0123] The In--Ga--Zn--O compound target, which is polycrystalline,
is made by mixing InO.sub.x powder, GaO.sub..gamma. powder, and
ZnO.sub.z powder in a predetermined molar ratio, applying pressure,
and performing heat treatment at a temperature higher than or equal
to 1000.degree. C. and lower than or equal to 1500.degree. C. Note
that X, Y, and Z are each a given positive number. The kinds of
powder and the molar ratio for mixing powder may be determined as
appropriate depending on the desired sputtering target.
[0124] Next, first heat treatment is preferably performed. The
first heat treatment may be performed at a temperature higher than
or equal to 250.degree. C. and lower than or equal to 650.degree.
C., preferably higher than or equal to 300.degree. C. and lower
than or equal to 500.degree. C., in an inert gas atmosphere, an
atmosphere containing an oxidizing gas at 10 ppm or more, or a
reduced pressure state. Alternatively, the first heat treatment may
be performed in such a manner that heat treatment is performed in
an inert gas atmosphere, and then another heat treatment is
performed in an atmosphere containing an oxidizing gas at 10 ppm or
more in order to compensate desorbed oxygen. By the first heat
treatment, the crystallinity of the oxide semiconductor layer 106
can be improved, and in addition, impurities such as hydrogen and
water can be removed from the oxide insulating film 104 and the
oxide semiconductor layer 106. Note that the step of the first heat
treatment may be performed before etching for formation of the
oxide semiconductor layer 106.
[0125] Then, a first conductive film 108 to be the first source
electrode layer 108a and the first drain electrode layer 108b is
formed over the oxide semiconductor layer 106 (see FIG. 2B). For
the first conductive film 108, Al, Cr, Cu, Ta, Ti, Mo, W, or an
alloy material containing any of these as a main component can be
used. For example, a 100-nm-thick tungsten film is formed by a
sputtering method or the like.
[0126] Next, resist masks 190a and 190b are formed over the first
conductive film 108 (see FIG. 2C).
[0127] After that, the first conductive film 108 is etched so as to
be divided over the oxide semiconductor layer 106 with the use of
the resist masks 190a and 190b as masks, so that the first source
electrode layer 108a and the first drain electrode layer 108b are
formed; then, the resist masks 190a and 190b are removed (see FIG.
2D).
[0128] At this time, the first conductive film 108 is over-etched,
so that the oxide semiconductor layer 106 is partly etched as
illustrated in FIG. 2D. However, when the etching selectivity of
the first conductive film 108 to the oxide semiconductor layer 106
is high, the oxide semiconductor layer 106 is hardly etched.
[0129] In addition, by over-etching the first conductive film 108,
part of the oxide insulating film 104, more specifically, the oxide
insulating film 104 in an exterior region of the first source
electrode layer 108a and the first drain electrode layer 108b is
etched as illustrated in FIG. 2D.
[0130] Then, a second conductive film 110 to be the second source
electrode layer 110a and the second drain electrode layer 110b is
formed over the oxide semiconductor layer 106, the first source
electrode layer 108a, and the first drain electrode layer 108b (see
FIG. 3A). For the second conductive film 110, a conductive nitride
such as tantalum nitride or titanium nitride, ruthenium, or an
alloy material containing any of these as a main component can be
used. For example, a 20-nm-thick tantalum nitride film is formed by
a sputtering method or the like.
[0131] Next, the second conductive film 110 is etched so as to be
divided over the oxide semiconductor layer 106, so that the second
source electrode layer 110a and the second drain electrode layer
110b are formed (see FIG. 3B). At this time, as illustrated in FIG.
3B, part of the oxide semiconductor layer 106 may be etched.
Although not illustrated, at the time of etching for formation of
the second source electrode layer 110a and the second drain
electrode layer 110b, part of the oxide insulating film 104, more
specifically, the oxide insulating film 104 in an exterior region
of the second source electrode layer 110a and the second drain
electrode layer 110b may be etched.
[0132] Note that in the case of forming a transistor whose channel
length (a distance between the second source electrode layer 110a
and the second drain electrode layer 110b) is extremely short, the
second source electrode layer 110a and the second drain electrode
layer 110b can be formed in such a manner that the second
conductive film 110 is etched first so as to cover the first source
electrode layer 108a and the first drain electrode layer 108b, and
then etched using resist masks that are processed by a method
suitable for fine line processing, such as electron beam exposure.
Note that by the use of a positive type resist for the resist
masks, the exposed region can be minimized and throughput can be
thus improved. In the above manner, a transistor having a channel
length of 30 nm or less can be formed.
[0133] Next, second heat treatment is preferably performed. The
second heat treatment can be performed under a condition similar to
that of the first heat treatment. By the second heat treatment,
impurities such as hydrogen and water can be further removed from
the oxide semiconductor layer 106.
[0134] Next, the gate insulating film 112 is formed over the oxide
insulating film 104, the oxide semiconductor layer 106, the second
source electrode layer 110a, and the second drain electrode layer
110b (see FIG. 3C). The gate insulating film 112 can be formed
using aluminum oxide, magnesium oxide, silicon oxide, silicon
oxynitride, silicon nitride oxide, silicon nitride, gallium oxide,
germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide,
neodymium oxide, hafnium oxide, tantalum oxide, or the like. The
gate insulating film 112 may be a stack of any of the above
materials. The gate insulating film 112 can be formed by a
sputtering method, a CVD method, an MBE method, an ALD method, a
PLD method, or the like.
[0135] It is preferable that the gate insulating film 112 be
successively subjected to heat treatment after being formed. For
example, the gate insulating film 112 is formed with a PE-CVD
apparatus and is successively subjected to heat treatment in a
vacuum. The heat treatment can remove hydrogen, moisture, and the
like from the gate insulating film 112. By the heat treatment, the
gate insulating film 112 can be dehydrated or dehydrogenated to be
dense.
[0136] After that, a third conductive film 113 to be the gate
electrode layer 114 is formed over the gate insulating film 112;
then, a resist mask 192 is formed in a desired region (see FIG.
3D). For the third conductive film 113, Al, Ti, Cr, Co, Ni, Cu, Y,
Zr, Mo, Ru, Ag, Ta, W, or an alloy material containing any of these
as a main component can be used. The third conductive film 113 can
be formed by a sputtering method or the like.
[0137] Then, the third conductive film 113 is etched, so that the
gate electrode layer 114 is formed; then, the resist mask 192 is
removed (see FIG. 4A).
[0138] Next, the protective insulating film 116 is formed over the
gate insulating film 112 and the gate electrode layer 114 (see FIG.
4B). It is preferable that a material to which oxygen is not easily
diffused or transferred be used for the protective insulating film
116. Further, a material containing little hydrogen when formed
into a film is preferably used for the protective insulating film
116. The hydrogen content of the protective insulating film 116 is
preferably lower than 5.times.10.sup.19/cm.sup.3, further
preferably lower than 5.times.10.sup.18/cm.sup.3. When the hydrogen
content of the protective insulating film 116 has the above value,
an off-state current of the transistor can be low.
[0139] For example, a silicon nitride film or a silicon nitride
oxide film is preferably used as the protective insulating film
116. The protective insulating film 116 can be formed by a
sputtering method, a CVD method, an MBE method, an ALD method, or a
PLD method. In particular, for the protective insulating film 116,
a silicon nitride film is preferably formed by a sputtering method,
in which case the content of water or hydrogen is low.
[0140] Next, third heat treatment is preferably performed. The
third heat treatment can be performed under a condition similar to
that of the first heat treatment. By the third heat treatment,
oxygen is easily released from the oxide insulating film 104 and
the gate insulating film 112, so that oxygen vacancies in the oxide
semiconductor layer 106 can be reduced.
[0141] Through the above process, the transistor 150 illustrated in
FIGS. 1A to 1E can be fabricated.
[0142] Note that this embodiment can be combined as appropriate
with any of the other embodiments and examples in this
specification.
Embodiment 3
[0143] In this embodiment, a transistor having a structure
different from that of the transistor described in Embodiment 1
will be described with reference to FIGS. 5A to 5C and FIGS. 6A to
6D.
[0144] FIGS. 5A, 5B, and 5C are a top view and cross-sectional
views which illustrate a transistor of one embodiment of the
present invention. FIG. 5A is the top view of the transistor, and a
cross section taken along a dashed-dotted line X2-Y2 in FIG. 5A is
illustrated in FIG. 5B. A cross section taken along a dashed-dotted
line V2-W2 in FIG. 5A is illustrated in FIG. 5C. Note that for
simplification of the drawing, some components in the top view in
FIG. 5A are illustrated in a see-through manner or not illustrated.
Note that the same portions as or portions having functions similar
to those of the transistor described in Embodiment 1 are denoted by
the same reference numerals, and repeated description thereof is
omitted.
[0145] A transistor 152 illustrated in FIGS. 5A, 5B, and 5C
includes the oxide insulating film 104 formed over the substrate
102; the oxide semiconductor layer 106 formed over the oxide
insulating film 104; a first source electrode layer 168a and a
first drain electrode layer 168b formed over the oxide
semiconductor layer 106; the second source electrode layer 110a and
the second drain electrode layer 110b formed over the first source
electrode layer 168a and the first drain electrode layer 168b,
respectively; the gate insulating film 112 formed over the oxide
insulating film 104, the oxide semiconductor layer 106, the second
source electrode layer 110a, and the second drain electrode layer
110b; the gate electrode layer 114 formed over the gate insulating
film 112 and in a position overlapping with the oxide semiconductor
layer 106; and the protective insulating film 116 formed over the
gate insulating film 112 and the gate electrode layer 114. Note
that another insulating layer, another wiring, or the like may be
formed over the protective insulating film 116.
[0146] The transistor 152 described in this embodiment is different
from the transistor 150 described in Embodiment 1 in the shapes of
the first source electrode layer 168a and the first drain electrode
layer 168b. Note that the second source electrode layer 110a, the
second drain electrode layer 110b, the gate insulating film 112,
the gate electrode layer 114, and the protective insulating film
116 which are formed over the first source electrode layer 168a and
the first drain electrode layer 168b have shapes corresponding to
the shapes of the first source electrode layer 168a and the first
drain electrode layer 168b.
[0147] With the staircase-like shapes of the first source electrode
layer 168a and the first drain electrode layer 168b as illustrated
in FIG. 5B, the second source electrode layer 110a, the second
drain electrode layer 110b, and the gate insulating film 112 can
have favorable coverage. When the gate insulating film 112 has
favorable coverage, oxygen released from the oxide insulating film
104 is likely to be diffused to an upper region of the oxide
semiconductor layer 106, which serves as a channel, through the
gate insulating film 112.
[0148] Here, a fabrication method of the transistor 152 will be
described with reference to FIGS. 6A to 6D.
[0149] In the fabrication method of the transistor 152, steps
before FIG. 6A are performed in a manner similar to those up to
FIG. 2C in the fabrication method of the transistor 150 (see FIG.
6A). Note that the cross-sectional structure illustrated in FIG. 6A
is the same as that illustrated in FIG. 2C.
[0150] Next, the first conductive film 108 is etched using the
resist masks 190a and 190b to form the first source electrode layer
108a and the first drain electrode layer 108b (see FIG. 6B).
[0151] Next, resist masks 194a and 194b are formed by making the
resist masks 190a and 190b recede or reducing them by ashing (see
FIG. 6C).
[0152] Next, the first source electrode layer 108a and the first
drain electrode layer 108b are etched using the resist masks 194a
and 194b and then the resist masks 194a and 194b are removed,
whereby the first source electrode layer 168a and the first drain
electrode layer 168b are formed (see FIG. 6D).
[0153] By alternately performing plural times a step of making the
resist masks recede or reducing them by ashing and an etching step,
the end portions of the first source electrode layer 168a and the
first drain electrode layer 168b can have staircase-like
shapes.
[0154] Note that the subsequent steps are performed in manners
similar to those of the corresponding steps in the fabrication
process of the transistor 150 described in the above embodiment,
whereby the transistor 152 described in this embodiment can be
fabricated.
[0155] The above is the transistor of one embodiment of the present
invention, whose structure can suppress an increase in oxygen
vacancies in the oxide semiconductor layer. Specifically, in the
transistor, oxygen can be supplied from the oxide insulating film
and the gate insulating film which are in contact with the oxide
semiconductor layer to the oxide semiconductor layer. It is thus
possible to provide a semiconductor device having favorable
electrical characteristics and high long-term reliability.
[0156] Note that this embodiment can be combined as appropriate
with any of the other embodiments and examples in this
specification.
Embodiment 4
[0157] In this embodiment, a transistor having a structure
different from that of the transistor described in Embodiment 1
will be described with reference to FIGS. 7A to 7D and FIGS. 8A and
8B.
[0158] FIGS. 7A, 7B, 7C, and 7D are a top view and cross-sectional
views which illustrate a transistor of one embodiment of the
present invention. FIG. 7A is the top view of the transistor, and a
cross section taken along a dashed-dotted line X3-Y3 in FIG. 7A is
illustrated in FIG. 7B. A cross section taken along a dashed-dotted
line V3-W3 in FIG. 7A is illustrated in FIG. 7C. FIG. 7D
illustrates widths of components of the transistor which are
illustrated in FIG. 7B. Note that for simplification of the
drawing, some components in the top view in FIG. 7A are illustrated
in a see-through manner or not illustrated. Note that the same
portions as or portions having functions similar to those of the
transistor described in Embodiment 1 are denoted by the same
reference numerals, and repeated description thereof is
omitted.
[0159] A transistor 154 illustrated in FIGS. 7A, 7B, 7C, and 7D
includes the oxide insulating film 104 formed over the substrate
102; the oxide semiconductor layer 106 formed over the oxide
insulating film 104; the first source electrode layer 108a and the
first drain electrode layer 108b formed over the oxide
semiconductor layer 106; the second source electrode layer 110a and
the second drain electrode layer 110b formed over the first source
electrode layer 108a and the first drain electrode layer 108b,
respectively; the gate insulating film 112 formed over the oxide
insulating film 104, the oxide semiconductor layer 106, the second
source electrode layer 110a, and the second drain electrode layer
110b; a gate electrode layer 174 formed over the gate insulating
film 112 and in a position overlapping with the oxide semiconductor
layer 106; and the protective insulating film 116 formed over the
gate insulating film 112 and the gate electrode layer 174. Note
that another insulating layer, another wiring, or the like may be
formed over the protective insulating film 116.
[0160] The transistor 154 described in this embodiment is different
from the transistor 150 described in Embodiment 1 in the shape of
the gate electrode layer 174. In the transistor 150, the gate
electrode layer 114 is provided in a position overlapping with the
first source electrode layer 108a, the first drain electrode layer
108b, the second source electrode layer 110a, and the second drain
electrode layer 110b; however, in the transistor 154 described in
this embodiment, the gate electrode layer 174 is provided in a
position overlapping with the second source electrode layer 110a
and the second drain electrode layer 110b. In other words, the gate
electrode layer 174 is not provided in a position overlapping with
the first source electrode layer 108a and the first drain electrode
layer 108b.
[0161] Here, distances between the components are described with
reference to the cross-sectional view in FIG. 7D.
[0162] The distance (L1) between the first source electrode layer
108a and the first drain electrode layer 108b is set to 0.8 .mu.m
or longer, preferably 1.0 .mu.m or longer. In the case where L1 is
shorter than 0.8 .mu.m, influence of oxygen vacancies generated in
the channel formation region cannot be eliminated, which might
cause deterioration of the electrical characteristics of the
transistor.
[0163] Even when the distance (L2) between the second source
electrode layer 110a and the second drain electrode layer 110b is
shorter than L1, for example, 30 nm or shorter, the transistor can
have favorable electrical characteristics.
[0164] When the width of the gate electrode layer 174 is referred
to as L0, L1 L0 L2 (L0 is longer than or equal to L2 and shorter
than or equal to L1) is satisfied so that parasitic capacitance
which is caused between the gate and the drain and between the gate
and the source can be made small as much as possible. Accordingly,
the frequency characteristics of the transistor can be improved.
For example, L0 can be set to 40 nm. Note that in order to obtain
favorable electrical characteristics of the transistor, it is
preferable that a difference between L0 and L2 be greater than or
equal to 2 nm and less than or equal to 20 nm and a difference
between L1 and L2 is greater than or equal to 20 nm and less than
or equal to 1 .mu.m.
[0165] Note that in a transistor that does not require high
frequency characteristics, L0 L1 L2 (L1 is longer than or equal to
L2 and shorter than or equal to L0) may be satisfied as illustrated
in FIG. 1B. With such a structure, the degree of difficulty in
formation steps of the gate electrode can be lowered.
[0166] When the width of the oxide semiconductor layer 106 is
referred to as L3 and the width of the transistor 154 is referred
to as L4, L3 is preferably shorter than 1 .mu.m and L4 is
preferably longer than or equal to 1 .mu.m and shorter than or
equal to 2.5 .mu.m. When L3 and L4 have the respective values, the
transistor can be miniaturized.
[0167] Here, a fabrication method of the transistor 154 will be
described with reference to FIGS. 8A and 8B.
[0168] In the fabrication method of the transistor 154, steps
before FIG. 8A are performed in a manner similar to those up to
FIG. 3D in the fabrication method of the transistor 150 (see FIG.
8A). Note that the cross section illustrated in FIG. 8A is
different from the cross section illustrated in FIG. 3D in the
shape of a resist mask 196.
[0169] Note that as the resist mask 196, a mask having a finer
pattern which is formed by performing a slimming process on a mask
formed by a photolithography method or the like is preferably used.
As the slimming process, an ashing process in which oxygen in a
radical state (an oxygen radical) is used can be employed, for
example. As a result of the slimming process, the line width of the
mask formed by a photolithography method or the like can be reduced
to a length shorter than or equal to the resolution limit of a
light exposure apparatus, preferably less than or equal to half of
the resolution limit of a light exposure apparatus, further
preferably less than or equal to one third of the resolution limit
of the light exposure apparatus. For example, the line width can be
greater than or equal to 20 nm and less than or equal to 2000 nm,
preferably greater than or equal to 50 nm and less than or equal to
350 nm.
[0170] Then, the third conductive film 113 is etched using a resist
mask 196, so that the gate electrode layer 174 is formed; then, the
resist mask 196 is removed (see FIG. 8B).
[0171] Note that the subsequent steps are performed in manners
similar to those of the corresponding steps in the fabrication
process of the transistor 150 described in the above embodiment,
whereby the transistor 154 described in this embodiment can be
fabricated.
[0172] The above is the transistor of one embodiment of the present
invention, whose structure can suppress an increase in oxygen
vacancies in the oxide semiconductor layer. Specifically, in the
transistor, oxygen can be supplied from the oxide insulating film
and the gate insulating film which are in contact with the oxide
semiconductor layer to the oxide semiconductor layer. It is thus
possible to provide a semiconductor device having favorable
electrical characteristics and high long-term reliability.
[0173] Note that this embodiment can be combined as appropriate
with any of the other embodiments and examples in this
specification.
Embodiment 5
[0174] In this embodiment, a transistor having a structure
different from that of the transistor described in Embodiment 1
will be described with reference to FIGS. 9A to 9C and FIGS. 10A to
10C.
[0175] First, a transistor 156 illustrated in FIGS. 9A to 9C is
described.
[0176] FIGS. 9A, 9B, and 9C are a top view and cross-sectional
views which illustrate a transistor of one embodiment of the
present invention. FIG. 9A is the top view of the transistor, and a
cross section taken along a dashed-dotted line X4-Y4 in FIG. 9A is
illustrated in FIG. 9B. A cross section taken along a dashed-dotted
line V4-W4 in FIG. 9A is illustrated in FIG. 9C. Note that for
simplification of the drawing, some components in the top view in
FIG. 9A are illustrated in a see-through manner or not illustrated.
Note that the same portions as or portions having functions similar
to those of the transistor described in Embodiment 1 are denoted by
the same reference numerals, and repeated description thereof is
omitted.
[0177] The transistor 156 illustrated in FIGS. 9A, 9B, and 9C
includes the oxide insulating film 104 formed over the substrate
102; the oxide semiconductor layer 106 formed over the oxide
insulating film 104; the first source electrode layer 168a and the
first drain electrode layer 168b formed over the oxide
semiconductor layer 106; the second source electrode layer 110a and
the second drain electrode layer 110b formed over the first source
electrode layer 168a and the first drain electrode layer 168b,
respectively; the gate insulating film 112 formed over the oxide
insulating film 104, the oxide semiconductor layer 106, the second
source electrode layer 110a, and the second drain electrode layer
110b; the gate electrode layer 174 formed over the gate insulating
film 112 and in a position overlapping with the oxide semiconductor
layer 106; and the protective insulating film 116 formed over the
gate insulating film 112 and the gate electrode layer 174. Note
that another insulating layer, another wiring, or the like may be
formed over the protective insulating film 116.
[0178] The transistor 156 described in this embodiment is different
from the transistor 150 described in Embodiment 1 in the shapes of
the first source electrode layer 168a, the first drain electrode
layer 168b, and the gate electrode layer 174. Note that the second
source electrode layer 110a, the second drain electrode layer 110b,
the gate insulating film 112, the gate electrode layer 174, and the
protective insulating film 116 which are formed over the first
source electrode layer 168a and the first drain electrode layer
168b have shapes corresponding to the shapes of the first source
electrode layer 168a and the first drain electrode layer 168b.
[0179] In the transistor 150, the gate electrode layer 114 is
provided in a position overlapping with the first source electrode
layer 108a, the first drain electrode layer 108b, the second source
electrode layer 110a, and the second drain electrode layer 110b;
however, in the transistor 156 described in this embodiment, the
gate electrode layer 174 is provided in a position overlapping with
the second source electrode layer 110a and the second drain
electrode layer 110b. In other words, the gate electrode layer 174
is not provided in a position overlapping with the first source
electrode layer 168a and the first drain electrode layer 168b.
[0180] The transistor 156 described in this embodiment can be
fabricated by referring to the fabrication methods of the
transistors 152 and 154 described in the above embodiments for the
structures of the other components.
[0181] Next, a transistor 158 illustrated in FIGS. 10A to 10C is
described.
[0182] The transistor 158 illustrated in FIGS. 10A, 10B, and 10C
includes the oxide insulating film 104 formed over the substrate
102; the oxide semiconductor layer 106 formed over the oxide
insulating film 104; a first source electrode layer 178a and a
first drain electrode layer 178b formed over the oxide
semiconductor layer 106; a second source electrode layer 180a and a
second drain electrode layer 180b formed over the first source
electrode layer 178a and the first drain electrode layer 178b,
respectively; the gate insulating film 112 formed over the oxide
insulating film 104, the oxide semiconductor layer 106, the second
source electrode layer 180a, and the second drain electrode layer
180b; the gate electrode layer 174 formed over the gate insulating
film 112 and in a position overlapping with the oxide semiconductor
layer 106; and the protective insulating film 116 formed over the
gate insulating film 112 and the gate electrode layer 174. Note
that another insulating layer, another wiring, or the like may be
formed over the protective insulating film 116.
[0183] The transistor 158 described in this embodiment is different
from the transistor 150 described in Embodiment 1 in the shapes of
the first source electrode layer 178a, the first drain electrode
layer 178b, the second source electrode layer 180a, the second
drain electrode layer 180b, and the gate electrode layer 174. Note
that the second source electrode layer 180a, the second drain
electrode layer 180b, the gate insulating film 112, the gate
electrode layer 174, and the protective insulating film 116 which
are formed over the first source electrode layer 178a and the first
drain electrode layer 178b have shapes corresponding to the shapes
of the first source electrode layer 178a and the first drain
electrode layer 178b.
[0184] With the shapes of the first source electrode layer 178a and
the first drain electrode layer 178b as illustrated in FIG. 10B,
the second source electrode layer 180a, the second drain electrode
layer 180b, and the gate insulating film 112 can have favorable
coverage.
[0185] Further, the second source electrode layer 180a and the
second drain electrode layer 180b are provided on inner sides than
the edges of the first source electrode layer 178a and the first
drain electrode layer 178b in the cross section in the channel
length direction (FIG. 10B). The first source electrode layer 178a
and the first drain electrode layer 178b are not necessarily
covered with the second source electrode layer 180a and the second
drain electrode layer 180b as long as the second source electrode
layer 180a and the second drain electrode layer 180b are provided
in this manner at least over a region to be a channel length of the
oxide semiconductor layer 106. Note that when the first source
electrode layer and the first drain electrode layer are covered
with the second source electrode layer and the second drain
electrode layer as in any of the transistors described in the above
embodiments, a possibility that oxygen might be diffused or
transferred to the side faces of the first source electrode layer
and the first drain electrode layer is reduced; accordingly, oxygen
can be favorably supplied to the oxide semiconductor layer from the
oxide insulating film through the gate insulating film.
[0186] The above is the transistor of one embodiment of the present
invention, whose structure can suppress an increase in oxygen
vacancies in the oxide semiconductor layer. Specifically, in the
transistor, oxygen can be supplied from the oxide insulating film
and the gate insulating film which are in contact with the oxide
semiconductor layer to the oxide semiconductor layer. It is thus
possible to provide a semiconductor device having favorable
electrical characteristics and high long-term reliability.
[0187] Note that this embodiment can be combined as appropriate
with any of the other embodiments and examples in this
specification.
Embodiment 6
[0188] In this embodiment, an example of a semiconductor device
(memory device) which includes a transistor of one embodiment of
the present invention, which can retain stored data even when not
powered, and which has an unlimited number of write cycles will be
described with reference to drawings.
[0189] FIG. 11A is a cross-sectional view of the semiconductor
device, and FIG. 11B is a circuit diagram of the semiconductor
device.
[0190] The semiconductor device illustrated in FIGS. 11A and 11B
includes a transistor 3200 including a first semiconductor material
in a lower portion, and a transistor 3202 including a second
semiconductor material and a capacitor 3204 in an upper portion. As
the transistor 3202, any of the transistors described in
Embodiments 1 to 5 can be used, and an example in which the
transistor 150 described in Embodiment 1 with reference to FIGS. 1A
to 1E is applied to the transistor 3202 is described in this
embodiment. One electrode of the capacitor 3204 is formed using the
same material as a gate electrode of the transistor 3202, the other
electrode of the capacitor 3204 is formed using the same material
as a source electrode and a drain electrode of the transistor 3202,
and a dielectric of the capacitor 3204 is formed using the same
material as the gate insulating film 112 of the transistor 3202;
thus, the capacitor 3204 can be formed at the same time as the
transistor 3202.
[0191] Here, the first semiconductor material and the second
semiconductor material are preferably materials having different
band gaps. For example, the first semiconductor material may be a
semiconductor material (such as silicon) other than an oxide
semiconductor, and the second semiconductor material may be the
oxide semiconductor described in Embodiment 1. A transistor
including, for example, crystalline silicon as a material other
than an oxide semiconductor can operate at high speed easily. On
the other hand, a transistor including an oxide semiconductor
enables charge to be held for a long time owing to its electrical
characteristics, that is, the low off-state current.
[0192] Although both of the above transistors are n-channel
transistors in the following description, it is needless to say
that p-channel transistors can be used. The specific structure of
the semiconductor device, such as the material used for the
semiconductor device and the structure of the semiconductor device,
is not necessarily limited to that described here except for the
use of the transistor described in Embodiment 1, which is formed
using an oxide semiconductor for storing data.
[0193] The transistor 3200 in FIG. 11A includes a channel formation
region provided in a substrate 3000 including a semiconductor
material (such as crystalline silicon), impurity regions provided
such that the channel formation region is provided therebetween,
intermetallic compound regions provided in contact with the
impurity regions, a gate insulating film provided over the channel
formation region, and a gate electrode layer provided over the gate
insulating film. Note that a transistor whose source electrode
layer and drain electrode layer are not illustrated in a drawing
may also be referred to as a transistor for the sake of
convenience. Further, in such a case, in description of a
connection of a transistor, a source region and a source electrode
layer may be collectively referred to as a source electrode layer,
and a drain region and a drain electrode layer may be collectively
referred to as a drain electrode layer. That is, in this
specification, the term "source electrode layer" might include a
source region.
[0194] Further, an element isolation insulating layer 3106 is
formed on the substrate 3000 so as to surround the transistor 3200,
and an oxide insulating film 3220 is formed so as to cover the
transistor 3200. Note that the element isolation insulating layer
3106 can be formed by an element isolation technique such as local
oxidation of silicon (LOCOS) or shallow trench isolation (STI).
[0195] For example, the transistor 3200 formed using a crystalline
silicon substrate can operate at high speed. Thus, when the
transistor is used as a reading transistor, data can be read at
high speed. As treatment prior to formation of the transistor 3202
and the capacitor 3204, CMP treatment is performed on the oxide
insulating film 3220 covering the transistor 3200, whereby the
oxide insulating film 3220 is planarized and, at the same time, an
upper surface of the gate electrode layer of the transistor 3200 is
exposed.
[0196] The transistor 3202 is provided over the oxide insulating
film 3220, and one of the source electrode and the drain electrode
thereof is extended so as to function as the other electrode of the
capacitor 3204.
[0197] The transistor 3202 in FIG. 11A is a top-gate transistor in
which a channel is formed in an oxide semiconductor layer. Since
the off-state current of the transistor 3202 is low, stored data
can be retained for a long period owing to such a transistor. In
other words, refresh operation becomes unnecessary or the frequency
of the refresh operation in a semiconductor memory device can be
extremely low, which leads to a sufficient reduction in power
consumption.
[0198] Further, an electrode 3150 overlaps with the transistor 3202
with the oxide insulating film 3220 provided therebetween. By
supplying an appropriate potential to the electrode 3150, the
threshold voltage of the transistor 3202 can be controlled. In
addition, long-term reliability of the transistor 3202 can be
improved.
[0199] The transistor 3200 and the transistor 3202 can be formed so
as to overlap with each other as illustrated in FIG. 11A, whereby
the area occupied by them can be reduced. Accordingly, the degree
of integration of the semiconductor device can be increased.
[0200] An example of a circuit configuration corresponding to FIG.
11A is illustrated in FIG. 11B.
[0201] In FIG. 11B, a first wiring (1st Line) is electrically
connected to a source electrode layer of the transistor 3200. A
second wiring (2nd Line) is electrically connected to a drain
electrode layer of the transistor 3200. A third wiring (3rd Line)
is electrically connected to the other of the source electrode
layer and the drain electrode layer of the transistor 3202, and a
fourth wiring (4th Line) is electrically connected to the gate
electrode layer of the transistor 3202. The gate electrode layer of
the transistor 3200 and the one of the source electrode layer and
the drain electrode layer of the transistor 3202 are electrically
connected to the other electrode of the capacitor 3204. A fifth
wiring (5th Line) is electrically connected to the one electrode of
the capacitor 3204.
[0202] The semiconductor device in FIG. 11B utilizes a
characteristic in which the potential of the gate electrode layer
of the transistor 3200 can be held, and thus enables writing,
storing, and reading of data as follows.
[0203] Writing and storing of data are described. First, the
potential of the fourth wiring is set to a potential at which the
transistor 3202 is turned on, so that the transistor 3202 is turned
on. Accordingly, the potential of the third wiring is supplied to
the gate electrode layer of the transistor 3200 and the capacitor
3204. That is, a predetermined charge is supplied to the gate
electrode layer of the transistor 3200 (writing). Here, one of two
kinds of charges providing different potential levels (hereinafter
referred to as a low-level charge and a high-level charge) is
supplied. After that, the potential of the fourth wiring is set to
a potential at which the transistor 3202 is turned off, so that the
transistor 3202 is turned off. Thus, the charge supplied to the
gate electrode layer of the transistor 3200 is held (holding).
[0204] Since the off-state current of the transistor 3202 is
extremely low, the charge of the gate electrode layer of the
transistor 3200 is held for a long time.
[0205] Next, reading of data is described. By supplying an
appropriate potential (a reading potential) to the fifth wiring
while supplying a predetermined potential (a constant potential) to
the first wiring, the potential of the second wiring varies
depending on the amount of charge held in the gate electrode layer
of the transistor 3200. This is because in general, when the
transistor 3200 is an n-channel transistor, an apparent threshold
voltage V.sub.th.sub._.sub.H in the case where the high-level
charge is given to the gate electrode layer of the transistor 3200
is lower than an apparent threshold voltage V.sub.th.sub._.sub.L in
the case where the low-level charge is given to the gate electrode
layer of the transistor 3200. Here, an apparent threshold voltage
refers to the potential of the fifth wiring which is needed to turn
on the transistor 3200. Thus, the potential of the fifth wiring is
set to a potential V.sub.0 which is between V.sub.th.sub._.sub.H
and V.sub.th.sub._.sub.L, whereby charge supplied to the gate
electrode layer of the transistor 3200 can be determined. For
example, in the case where the high-level charge is supplied in
writing, when the potential of the fifth wiring is V.sub.0
(>V.sub.th.sub._.sub.H), the transistor 3200 is turned on. In
the case where the low-level charge is supplied in writing, even
when the potential of the fifth wiring is V.sub.0
(<V.sub.th.sub._.sub.L, the transistor 3200 remains off.
Therefore, the data stored in the gate electrode layer can be read
by determining the potential of the second wiring.
[0206] Note that in the case where memory cells are arrayed, it is
necessary that only data of a desired memory cell be able to be
read. The fifth wiring in the case where data is not read may be
supplied with a potential at which the transistor 3200 is turned
off regardless of the state of the gate electrode layer, that is, a
potential lower than V.sub.th.sub._.sub.H. Alternatively, the fifth
wiring may be supplied with a potential at which the transistor
3200 is turned on regardless of the state of the gate electrode
layer, that is, a potential higher than V.sub.th.sub._.sub.L.
[0207] When including a transistor having a channel formation
region formed using an oxide semiconductor and having an extremely
low off-state current, the semiconductor device described in this
embodiment can retain stored data for an extremely long period. In
other words, refresh operation becomes unnecessary or the frequency
of the refresh operation can be extremely low, which leads to a
sufficient reduction in power consumption. Moreover, stored data
can be retained for a long period even when power is not supplied
(note that a potential is preferably fixed).
[0208] Further, in the semiconductor device described in this
embodiment, high voltage is not needed for writing data and there
is no problem of deterioration of elements. For example, unlike a
conventional nonvolatile memory, it is not necessary to inject and
extract electrons into and from a floating gate, and thus a problem
such as deterioration of a gate insulating film does not arise at
all. That is, the semiconductor device according to the disclosed
invention does not have a limitation on the number of times data
can be rewritten, which is a problem of a conventional nonvolatile
memory, and the reliability thereof is drastically improved.
Furthermore, data is written depending on the on state and the off
state of the transistor, whereby high-speed operation can be easily
achieved.
[0209] As described above, a miniaturized and highly-integrated
semiconductor device having high electrical characteristics and a
fabrication method of the semiconductor device can be provided.
[0210] Note that this embodiment can be combined as appropriate
with any of the other embodiments and examples in this
specification.
Embodiment 7
[0211] In this embodiment, a semiconductor device including a
transistor of one embodiment of the present invention, which can
retain stored data even when not powered, which does not have a
limitation on the number of write cycles, and which has a structure
different from that described in Embodiment 6, will be
described.
[0212] FIG. 12A illustrates an example of a circuit configuration
of the semiconductor device, and FIG. 12B is a conceptual diagram
illustrating an example of the semiconductor device. As a
transistor 4162 included in the semiconductor device, any of the
transistors described in Embodiments 1 to 5 can be used. A
capacitor 4254 can be formed through the same process and at the
same time as the transistor 4162 in a manner similar to that of the
capacitor 3204 described in Embodiment 6.
[0213] In the semiconductor device illustrated in FIG. 12A, a bit
line BL is electrically connected to a source electrode of the
transistor 4162, a word line WL is electrically connected to a gate
electrode of the transistor 4162, and a drain electrode of the
transistor 4162 is electrically connected to a first terminal of
the capacitor 4254.
[0214] Next, writing and storing of data in the semiconductor
device (a memory cell 4250) illustrated in FIG. 12A are
described.
[0215] First, the potential of the word line WL is set to a
potential at which the transistor 4162 is turned on, and the
transistor 4162 is turned on. Accordingly, the potential of the bit
line BL is supplied to the first terminal of the capacitor 4254
(writing). After that, the potential of the word line WL is set to
a potential at which the transistor 4162 is turned off, so that the
transistor 4162 is turned off. Thus, the potential of the first
terminal of the capacitor 4254 is held (holding).
[0216] In addition, the transistor 4162 including an oxide
semiconductor has an extremely low off-state current. For that
reason, the potential of the first terminal of the capacitor 4254
(or a charge accumulated in the capacitor 4254) can be held for an
extremely long time by turning off the transistor 4162.
[0217] Next, reading of data is described. When the transistor 4162
is turned on, the bit line BL which is in a floating state and the
capacitor 4254 are electrically connected to each other, and the
charge is redistributed between the bit line BL and the capacitor
4254. As a result, the potential of the bit line BL is changed. The
amount of change in potential of the bit line BL varies depending
on the potential of the first terminal of the capacitor 4254 (or
the charge accumulated in the capacitor 4254).
[0218] For example, the potential of the bit line BL after charge
redistribution is (C.sub.B.times.V.sub.BO+C.times.V)/(C.sub.B+C),
where V is the potential of the first terminal of the capacitor
4254, C is the capacitance of the capacitor 4254, C.sub.B is the
capacitance component of the bit line BL (hereinafter also referred
to as bit line capacitance), and V.sub.BO is the potential of the
bit line BL before the charge redistribution. Therefore, it can be
found that assuming that the memory cell 4250 is in either of two
states in which the potentials of the first terminal of the
capacitor 4254 are V.sub.1 and V.sub.0 (V.sub.1>V.sub.0), the
potential of the bit line BL in the case of holding the potential
V.sub.1 (=(C.sub.B.times.V.sub.BO+C.times.V.sub.1)/(C.sub.B+C)) is
higher than the potential of the bit line BL in the case of holding
the potential V.sub.0
(=(C.sub.B.times.V.sub.B0+C.times.V.sub.0)/(C.sub.B+C)).
[0219] Then, by comparing the potential of the bit line BL with a
predetermined potential, data can be read.
[0220] As described above, the semiconductor device illustrated in
FIG. 12A can hold charge that is accumulated in the capacitor 4254
for a long time because the off-state current of the transistor
4162 is extremely low. In other words, refresh operation becomes
unnecessary or the frequency of the refresh operation can be
extremely low, which leads to a sufficient reduction in power
consumption. Moreover, stored data can be retained for a long
period even when power is not supplied.
[0221] Next, the semiconductor device illustrated in FIG. 12B is
described.
[0222] The semiconductor device illustrated in FIG. 12B includes a
memory cell array 4251 (memory cell arrays 4251a and 4251b)
including the plurality of memory cells 4250 illustrated in FIG.
12A as memory circuits in the upper portion, and a peripheral
circuit 4253 in the lower portion, which is necessary for operating
the memory cell array 4251. Note that the peripheral circuit 4253
is electrically connected to the memory cell array 4251.
[0223] In the structure illustrated in FIG. 12B, the peripheral
circuit 4253 can be provided under the memory cell arrays 4251a and
4251b. Thus, the size of the semiconductor device can be
reduced.
[0224] It is preferable that a semiconductor material of the
transistor provided in the peripheral circuit 4253 be different
from that of the transistor 4162. For example, silicon, germanium,
silicon germanium, silicon carbide, or gallium arsenide can be
used, and a single crystal semiconductor is preferably used.
Alternatively, an organic semiconductor material or the like may be
used. A transistor including such a semiconductor material can
operate at sufficiently high speed. Thus, the transistor enables a
variety of circuits (e.g., a logic circuit and a driver circuit)
which need to operate at high speed to be favorably obtained.
[0225] Note that FIG. 12B illustrates, as an example, the
semiconductor device in which the memory cell array 4251 has a
stack of the memory cell array 4251a and the memory cell array
4251b; however, the number of stacked memory cell arrays is not
limited to two. For the memory cell array 4251, a stack of three or
more memory cell arrays may be used, or only one memory cell array
may be used.
[0226] The transistor 4162 is formed using an oxide semiconductor,
and any of the transistors described in Embodiments 1 to 5 can be
used as the transistor 4162. Since the off-state current of the
transistor including an oxide semiconductor is low, stored data can
be retained for a long period. In other words, the frequency of
refresh operation can be extremely low, which leads to a sufficient
reduction in power consumption.
[0227] A semiconductor device having a novel feature can be
obtained by being provided with both a peripheral circuit which
includes the transistor including a material other than an oxide
semiconductor (in other words, a transistor capable of operating at
sufficiently high speed) and a memory circuit which includes the
transistor including an oxide semiconductor (in a broader sense, a
transistor whose off-state current is sufficiently low). In
addition, with a structure where the peripheral circuit and the
memory circuit are stacked, an increase in the degree of
integration of the semiconductor device can be achieved.
[0228] As described above, a miniaturized and highly-integrated
semiconductor device having high electric characteristics can be
provided.
[0229] Note that this embodiment can be combined as appropriate
with any of the other embodiments and examples in this
specification.
Embodiment 8
[0230] In this embodiment, examples of an electronic device and an
electric device which can use any of the transistors described in
Embodiments 1 to 5 will be described.
[0231] Any of the transistors described in Embodiments 1 to 5 can
be applied to a variety of electronic devices (including game
machines) and electric devices. Examples of the electronic devices
include display devices of televisions, monitors, and the like,
lighting devices, desktop personal computers and notebook personal
computers, word processors, image reproduction devices which
reproduce still images or moving images stored in recording media
such as digital versatile discs (DVDs), portable compact disc (CD)
players, radio receivers, tape recorders, headphone stereos,
stereos, cordless phone handsets, transceivers, mobile phones, car
phones, portable game machines, calculators, portable information
terminals, electronic notebooks, e-book readers, electronic
translators, audio input devices, cameras such as video cameras and
digital still cameras, electric shavers, and IC chips. Examples of
the electric devices include high-frequency heating appliances such
as microwave ovens, electric rice cookers, electric washing
machines, electric vacuum cleaners, air-conditioning systems such
as air conditioners, dishwashers, dish dryers, clothes dryers,
futon dryers, electric refrigerators, electric freezers, electric
refrigerator-freezers, freezers for preserving DNA, radiation
counters, and medical equipment such as dialyzers. In addition, the
examples of the electric devices include alarm devices such as
smoke detectors, gas alarm devices, and security alarm devices.
Further, the examples also include industrial equipment such as
guide lights, traffic lights, belt conveyors, elevators,
escalators, industrial robots, and power storage systems. In
addition, moving objects and the like driven by oil engines and
electric motors using power from non-aqueous secondary batteries
are also included in the category of electric devices. Examples of
the moving objects include electric vehicles (EV), hybrid electric
vehicles (HEV) which include both an internal-combustion engine and
a motor, plug-in hybrid electric vehicles (PHEV), tracked vehicles
in which caterpillar tracks are substituted for wheels of these
vehicles, motorized bicycles including motor-assisted bicycles,
motorcycles, electric wheelchairs, golf carts, boats or ships,
submarines, helicopters, aircrafts, rockets, artificial satellites,
space probes, planetary probes, and spacecrafts. Specific examples
of these electronic devices and electric devices are illustrated in
FIG. 13, FIG. 14, FIGS. 15A to 15C, and FIGS. 16A to 16C.
[0232] First, as an example of the alarm device, a structure of a
fire alarm is described with reference to FIG. 13. A fire alarm in
this specification refers to any device which raises an alarm over
fire occurrence instantly, and for example, a residential fire
alarm, an automatic fire alarm system, and a fire detector used for
the automatic fire alarm system are included in its category.
[0233] An alarm device illustrated in FIG. 13 includes at least a
microcomputer 500. Here, the microcomputer 500 is provided in the
alarm device. The microcomputer 500 includes a power gate
controller 503 electrically connected to a high potential power
supply line VDD, a power gate 504 electrically connected to the
high potential power supply line VDD and the power gate controller
503, a CPU (central processing unit) 505 electrically connected to
the power gate 504, and a sensor portion 509 electrically connected
to the power gate 504 and the CPU 505. Further, the CPU 505
includes a volatile memory portion 506 and a nonvolatile memory
portion 507.
[0234] The CPU 505 is electrically connected to a bus line 502
through an interface 508. The interface 508 as well as the CPU 505
is electrically connected to the power gate 504. As a bus standard
of the interface 508, an I.sup.2C bus can be used, for example. A
light-emitting element 530 electrically connected to the power gate
504 through the interface 508 is provided in the alarm device
described in this embodiment.
[0235] The light-emitting element 530 is preferably an element
which emits light with high directivity, and for example, an
organic EL element, an inorganic EL element, or a light-emitting
diode (LED) can be used.
[0236] The power gate controller 503 includes a timer and controls
the power gate 504 with the use of the timer. The power gate 504
allows or stops supply of power from the high potential power
supply line VDD to the CPU 505, the sensor portion 509, and the
interface 508, in accordance with the control by the power gate
controller 503. Here, as an example of the power gate 504, a
switching element such as a transistor can be given.
[0237] With the use of the power gate controller 503 and the power
gate 504, power is supplied to the sensor portion 509, the CPU 505,
and the interface 508 in a period during which the amount of light
is measured, and supply of power to the sensor portion 509, the CPU
505, and the interface 508 can be stopped during an interval
between measurement periods. The alarm device operates in such a
manner, whereby a reduction in power consumption of the alarm
device can be achieved compared with that of the case where power
is continuously supplied to the above structures.
[0238] In the case where a transistor is used as the power gate
504, it is preferable to use a transistor which has an extremely
low off-state current and is used for the nonvolatile memory
portion 507, for example, a transistor including an oxide
semiconductor. With the use of such a transistor, leakage current
can be reduced when supply of power is stopped by the power gate
504, so that a reduction in power consumption of the alarm device
can be achieved.
[0239] A direct-current power source 501 may be provided in the
alarm device described in this embodiment so that power is supplied
from the direct-current power source 501 to the high potential
power supply line VDD. An electrode of the direct-current power
source 501 on a high potential side is electrically connected to
the high potential power supply line VDD, and an electrode of the
direct-current power source 501 on a low potential side is
electrically connected to a low potential power supply line VSS.
The low potential power supply line VSS is electrically connected
to the microcomputer 500. Here, the high potential power supply
line VDD is supplied with a high potential H. The low potential
power supply line VSS is supplied with a low potential L, for
example, a ground potential (GND).
[0240] In the case where a battery is used as the direct-current
power source 501, for example, a battery case including an
electrode electrically connected to the high potential power supply
line VDD, an electrode electrically connected to the low potential
power supply line VSS, and a housing which can hold the battery is
provided in a housing. Note that the alarm device described in this
embodiment does not necessarily include the direct-current power
source 501 and may have, for example, a structure in which power is
supplied from an alternate-current power source provided outside
the alarm device through a wiring.
[0241] As the above battery, a secondary battery such as a lithium
ion secondary battery (also called a lithium ion storage battery or
a lithium ion battery) can be used. Further, a solar battery is
preferably provided so that the secondary battery can be
charged.
[0242] The sensor portion 509 measures a physical quantity relating
to an abnormal situation and transmits a measurement value to the
CPU 505. A physical quantity relating to an abnormal situation
depends on the usage of the alarm device, and in an alarm device
functioning as a fire alarm, a physical quantity relating to a fire
is measured. Accordingly, the sensor portion 509 measures the
amount of light as a physical quantity relating to a fire and
senses smoke.
[0243] The sensor portion 509 includes an optical sensor 511
electrically connected to the power gate 504, an amplifier 512
electrically connected to the power gate 504, and an AD converter
513 electrically connected to the power gate 504 and the CPU 505.
The optical sensor 511, the amplifier 512, and the AD converter 513
which are provided in the sensor portion 509, and the
light-emitting element 530 operate when the power gate 504 allows
supply of power to the sensor portion 509.
[0244] Here, FIG. 14 illustrates part of the cross section of the
alarm device illustrated in FIG. 13. In the alarm device, element
isolation regions 603 are formed in a p-type semiconductor
substrate 601, and an n-channel transistor 719 including a gate
insulating film 607, a gate electrode layer 609, n-type impurity
regions 611a and 611b, an insulating film 615, and an insulating
film 617 is formed. Here, the n-channel transistor 719 is formed
using a semiconductor other than an oxide semiconductor, such as
single crystal silicon, so that the n-channel transistor 719 can
operate at sufficiently high speed. Accordingly, a volatile memory
portion of a CPU that can achieve high-speed access can be
formed.
[0245] In addition, contact plugs 619a and 619b are formed in
openings which are formed by partly etching the insulating films
615 and 617, and an insulating film 621 having groove portions is
formed over the insulating film 617 and the contact plugs 619a and
619b.
[0246] Wirings 623a and 623b are formed in the groove portions of
the insulating film 621, and an insulating film 620 formed by a
sputtering method, a CVD method, or the like is provided over the
insulating film 621 and the wirings 623a and 623b. An insulating
film 622 having a groove portion is formed over the insulating film
620.
[0247] An electrode 624 functioning as a back gate electrode of a
second transistor 717 is formed in the groove portion of the
insulating film 622. The electrode 624 can control the threshold
voltage of the second transistor 717.
[0248] An oxide insulating film 625 formed by a sputtering method,
a CVD method, or the like is provided over the insulating film 622
and the electrode 624, and the second transistor 717 and a
photoelectric conversion element 714 are provided over the oxide
insulating film 625.
[0249] The second transistor 717 includes an oxide semiconductor
layer 606, a first source electrode layer 616a and a first drain
electrode layer 616b in contact with the oxide semiconductor layer
606, a second source electrode layer 626a and a second drain
electrode layer 626b in contact with upper portions of the first
source electrode layer 616a and the first drain electrode layer
616b, a gate insulating film 612, a gate electrode layer 604, and a
protective insulating film 618. Moreover, an insulating film 645
and an insulating film 646 cover the photoelectric conversion
element 714 and the second transistor 717, and a wiring 649 is
formed over the insulating film 646 so as to be in contact with the
first drain electrode layer 616b. The wiring 649 functions as the
node which electrically connects a drain electrode of the second
transistor 717 to the gate electrode layer 609 of the n-channel
transistor 719.
[0250] Although the structure in which the connection portion of
the second transistor 717 and the wiring 649 is in contact with the
first drain electrode layer 616b is shown as an example in this
embodiment, without limitation thereon, a structure in which the
connection portion is in contact with the second drain electrode
layer 626b may be employed, for example.
[0251] Here, any of the transistors described in Embodiments 1 to 5
can be used as the second transistor 717, and the oxide
semiconductor layer 606 corresponds to the oxide semiconductor
layer 106 described in Embodiment 1. Moreover, the first source
electrode layer 616a and the first drain electrode layer 616b
correspond to the first source electrode layer 108a and the first
drain electrode layer 108b described in Embodiment 1, respectively.
The second source electrode layer 626a and the second drain
electrode layer 626b correspond to the second source electrode
layer 110a and the second drain electrode layer 110b described in
Embodiment 1, respectively.
[0252] The optical sensor 511 includes the photoelectric conversion
element 714, a capacitor, a first transistor, the second transistor
717, a third transistor, and the n-channel transistor 719. As the
photoelectric conversion element 714, a photodiode can be used
here, for example.
[0253] One of terminals of the photoelectric conversion element 714
is electrically connected to the low potential power supply line
VSS, and the other of the terminals thereof is electrically
connected to one of the first source electrode layer 616a and the
first drain electrode layer 616b and/or one of the second source
electrode layer 626a and the second drain electrode layer 626b of
the second transistor 717.
[0254] The gate electrode layer 604 of the second transistor 717 is
supplied with an electric charge accumulation control signal Tx,
and the other of the first source electrode layer 616a and the
first drain electrode layer 616b and/or the other of the second
source electrode layer 626a and the second drain electrode layer
626b of the second transistor 717 are/is electrically connected to
one of a pair of electrodes of the capacitor, one of a source
electrode and a drain electrode of the first transistor, and the
gate electrode of the n-channel transistor 719 (hereinafter the
node is referred to as a node FD in some cases).
[0255] The other of the pair of electrodes of the capacitor is
electrically connected to the low potential power supply line VSS.
A gate electrode of the first transistor is supplied with a reset
signal Res, and the other of the source electrode and the drain
electrode thereof is electrically connected to the high potential
power supply line VDD.
[0256] One of a source electrode and a drain electrode of the
n-channel transistor 719 is electrically connected to one of a
source electrode and a drain electrode of the third transistor and
the amplifier 512. The other of the source electrode and the drain
electrode of the n-channel transistor 719 is electrically connected
to the high potential power supply line VDD. A gate electrode of
the third transistor is supplied with a bias signal Bias, and the
other of the source electrode and the drain electrode thereof is
electrically connected to the low potential power supply line
VSS.
[0257] Note that the capacitor is not necessarily provided. For
example, in the case where parasitic capacitance of the n-channel
transistor 719 or the like is sufficiently large, a structure
without the capacitor may be employed.
[0258] Further, as each of the first transistor and the second
transistor 717, the transistor having an extremely low off-state
current is preferably used. As the transistor having an extremely
low off-state current, a transistor including an oxide
semiconductor is preferably used. With such a structure, the
potential of the node FD can be held for a long time.
[0259] In the structure in FIG. 14, the photoelectric conversion
element 714 is electrically connected to the second transistor 717
and is provided over the oxide insulating film 625.
[0260] The photoelectric conversion element 714 includes a
semiconductor film 660 provided over the oxide insulating film 625,
and the first source electrode layer 616a and an electrode 616c
which are in contact with a top surface of the semiconductor film
660. The first source electrode layer 616a is an electrode
functioning as the source electrode or the drain electrode of the
second transistor 717 and electrically connects the photoelectric
conversion element 714 to the second transistor 717. In the
photoelectric conversion element 714, the second source electrode
layer 626a and an electrode 626c are provided over the first source
electrode layer 616a and the electrode 616c, respectively.
[0261] Over the semiconductor film 660, the second source electrode
layer 626a, and the electrode 626c, the gate insulating film 612,
the protective insulating film 618, the insulating film 645, and
the insulating film 646 are provided. Further, a wiring 656 is
formed over the insulating film 646 and is in contact with the
electrode 616c through an opening provided in the electrode 626c,
the gate insulating film 612, the protective insulating film 618,
the insulating film 645, and the insulating film 646.
[0262] The electrode 616c can be formed in steps similar to those
of the first source electrode layer 616a and the first drain
electrode layer 616b, and the wiring 656 can be formed in steps
similar to those of the wiring 649.
[0263] As the semiconductor film 660, a semiconductor film which
can perform photoelectric conversion is provided, and for example,
silicon or germanium can be used. In the case of using silicon, the
semiconductor film 660 functions as an optical sensor which senses
visible light. Further, there is a difference, between silicon and
germanium, in wavelengths of electromagnetic waves that can be
absorbed. When the semiconductor film 660 includes germanium, a
sensor which mainly senses an infrared ray can be obtained.
[0264] In the above manner, the sensor portion 509 including the
optical sensor 511 can be incorporated into the microcomputer 500,
so that the number of components can be reduced and the size of the
housing of the alarm device can be reduced. Note that in the case
where the place of the optical sensor or the photoelectric
conversion element needs a high degree of freedom, the optical
sensor or the photoelectric conversion element may be externally
provided so as to be electrically connected to the microcomputer
500.
[0265] In the alarm device including the above-described IC chip,
the CPU 505 in which a plurality of circuits including any of the
transistors described in the above embodiments are combined and
mounted on one IC chip is used.
[0266] FIGS. 15A to 15C are block diagrams illustrating a specific
configuration of a CPU at least partly including any of the
transistors described in Embodiments 1 to 5.
[0267] The CPU illustrated in FIG. 15A includes an arithmetic logic
unit (ALU) 1191, an ALU controller 1192, an instruction decoder
1193, an interrupt controller 1194, a timing controller 1195, a
register 1196, a register controller 1197, a bus interface 1198, a
rewritable ROM 1199, and an ROM interface 1189 over a substrate
1190. A semiconductor substrate, an SOI substrate, a glass
substrate, or the like is used as the substrate 1190. The ROM 1199
and the ROM interface 1189 may be provided over a separate chip.
Needless to say, the CPU in FIG. 15A is just an example in which
the configuration has been simplified, and an actual CPU may have
various configurations depending on the application.
[0268] An instruction that is input to the CPU through the bus
interface 1198 is input to the instruction decoder 1193 and decoded
therein, and then, input to the ALU controller 1192, the interrupt
controller 1194, the register controller 1197, and the timing
controller 1195.
[0269] The ALU controller 1192, the interrupt controller 1194, the
register controller 1197, and the timing controller 1195 conduct
various controls in accordance with the decoded instruction.
Specifically, the ALU controller 1192 generates signals for
controlling the operation of the ALU 1191. While the CPU is
executing a program, the interrupt controller 1194 judges an
interrupt request from an external input/output device or a
peripheral circuit on the basis of its priority or a mask state,
and processes the request. The register controller 1197 generates
an address of the register 1196, and reads/writes data from/to the
register 1196 in accordance with the state of the CPU.
[0270] The timing controller 1195 generates signals for controlling
operation timings of the ALU 1191, the ALU controller 1192, the
instruction decoder 1193, the interrupt controller 1194, and the
register controller 1197. For example, the timing controller 1195
includes an internal clock generator for generating an internal
clock signal CLK2 based on a reference clock signal CLK1, and
supplies the internal clock signal CLK2 to the above circuits.
[0271] In the CPU illustrated in FIG. 15A, a memory cell is
provided in the register 1196. As the memory cell of the register
1196, any of the transistors described in the above embodiments can
be used.
[0272] In the CPU illustrated in FIG. 15A, the register controller
1197 selects operation of storing data in the register 1196 in
accordance with an instruction from the ALU 1191. That is, the
register controller 1197 selects whether data is stored by a
flip-flop or by a capacitor in the memory cell included in the
register 1196. When data storing by the flip-flop is selected, a
power supply voltage is supplied to the memory cell in the register
1196. When data storing by the capacitor is selected, the data is
rewritten in the capacitor, and supply of power supply voltage to
the memory cell in the register 1196 can be stopped.
[0273] The power supply can be stopped by a switching element
provided between a memory cell group and a node to which a power
supply potential VDD or a power supply potential VSS is supplied,
as illustrated in FIG. 15B or FIG. 15C. Circuits illustrated in
FIGS. 15B and 15C are described below.
[0274] FIGS. 15B and 15C each illustrate an example of the
configuration of a memory circuit in which any of the transistors
described in the above embodiments is used as a switching element
which controls supply of a power supply potential to a memory
cell.
[0275] The memory device illustrated in FIG. 15B includes a
switching element 1141 and a memory cell group 1143 including a
plurality of memory cells 1142. Specifically, as each of the memory
cells 1142, any of the transistors described in the above
embodiments can be used. Each of the memory cells 1142 included in
the memory cell group 1143 is supplied with the high-level power
supply potential VDD via the switching element 1141. Further, each
of the memory cells 1142 included in the memory cell group 1143 is
supplied with a potential of a signal IN and the low-level power
supply potential VSS.
[0276] In FIG. 15B, any of the transistors described in the above
embodiments is used as the switching element 1141, and the
switching of the transistor is controlled by a signal SigA supplied
to a gate electrode layer thereof.
[0277] Note that FIG. 15B illustrates the configuration in which
the switching element 1141 includes only one transistor; however,
without particular limitation thereon, the switching element 1141
may include a plurality of transistors. In the case where the
switching element 1141 includes a plurality of transistors which
function as switching elements, the plurality of transistors may be
connected to each other in parallel, in series, or in combination
of parallel connection and series connection.
[0278] Although the switching element 1141 controls the supply of
the high-level power supply potential VDD to each of the memory
cells 1142 included in the memory cell group 1143 in FIG. 15B, the
switching element 1141 may control the supply of the low-level
power supply potential VSS.
[0279] In FIG. 15C, an example of a memory device in which each of
the memory cells 1142 included in the memory cell group 1143 is
supplied with the low-level power supply potential VSS via the
switching element 1141 is illustrated. The supply of the low-level
power supply potential VSS to each of the memory cells 1142
included in the memory cell group 1143 can be controlled by the
switching element 1141.
[0280] When a switching element is provided between a memory cell
group and a node to which the power supply potential VDD or the
power supply potential VSS is supplied, data can be stored even in
the case where an operation of a CPU is temporarily stopped and the
supply of the power supply voltage is stopped; accordingly, power
consumption can be reduced. Specifically, for example, while a user
of a personal computer does not input data to an input device such
as a keyboard, the operation of the CPU can be stopped, so that the
power consumption can be reduced.
[0281] Although the CPU is given as an example here, the transistor
can also be applied to an LSI such as a digital signal processor
(DSP), a custom LSI, or a field programmable gate array (FPGA).
[0282] In FIG. 16A, an alarm device 8100 is a residential fire
alarm, which is an example of an electric device including a sensor
portion and a microcomputer 8101. Note that the microcomputer 8101
is an example of an electronic device including a CPU in which any
of the transistors described in the above embodiments is used.
[0283] In FIG. 16A, an air conditioner which includes an indoor
unit 8200 and an outdoor unit 8204 is an example of an electric
device including the CPU in which any of the transistors described
in the above embodiments is used. Specifically, the indoor unit
8200 includes a housing 8201, an air outlet 8202, a CPU 8203, and
the like. Although the CPU 8203 is provided in the indoor unit 8200
in FIG. 16A, the CPU 8203 may be provided in the outdoor unit 8204.
Alternatively, the CPU 8203 may be provided in both the indoor unit
8200 and the outdoor unit 8204. By using any of the transistors
described in the above embodiments as the CPU in the air
conditioner, a reduction in power consumption of the air
conditioner can be achieved.
[0284] In FIG. 16A, an electric refrigerator-freezer 8300 is an
example of an electric device including the CPU in which any of the
transistors described in the above embodiments is used.
Specifically, the electric refrigerator-freezer 8300 includes a
housing 8301, a door for a refrigerator 8302, a door for a freezer
8303, a CPU 8304, and the like. In FIG. 16A, the CPU 8304 is
provided in the housing 8301. When any of the transistors described
in the above embodiments is used as the CPU 8304 of the electric
refrigerator-freezer 8300, a reduction in power consumption of the
electric refrigerator-freezer 8300 can be achieved.
[0285] FIGS. 16B and 16C illustrate an example of an electric
vehicle which is an example of an electric device. An electric
vehicle 9700 is equipped with a secondary battery 9701. The output
of the electric power of the secondary battery 9701 is adjusted by
a control circuit 9702 and the electric power is supplied to a
driving device 9703. The control circuit 9702 is controlled by a
processing unit 9704 including a ROM, a RAM, a CPU, or the like
which is not illustrated. When any of the transistors described in
the above embodiments is used as the CPU in the electric vehicle
9700, a reduction in power consumption of the electric vehicle 9700
can be achieved.
[0286] The driving device 9703 includes a DC motor or an AC motor
either alone or in combination with an internal-combustion engine.
The processing unit 9704 outputs a control signal to the control
circuit 9702 based on input data such as data of operation (e.g.,
acceleration, deceleration, or stop) by a driver or data during
driving (e.g., data on an upgrade or a downgrade, or data on a load
on a driving wheel) of the electric vehicle 9700. The control
circuit 9702 adjusts the electric energy supplied from the
secondary battery 9701 in accordance with the control signal of the
processing unit 9704 to control the output of the driving device
9703. In the case where the AC motor is mounted, although not
illustrated, an inverter which converts direct current into
alternate current is also incorporated.
[0287] Note that this embodiment can be combined as appropriate
with any of the other embodiments and examples in this
specification.
Example 1
[0288] In this example, a conductive film was formed over an oxide
semiconductor film and diffusion or transfer of elements which
exist between the stacked films was examined by secondary ion mass
spectrometry (SIMS), and results thereof will be described.
[0289] FIGS. 17A and 17B each show SIMS analysis results of
profiles of an oxygen isotope (.sup.18O) in a depth direction
before and after heat treatment in samples which were each
fabricated with a stack of an IGZO film and a tungsten film by a
sputtering method. Note that the IGZO film was formed by a DC
sputtering method with a sputtering target containing In, Ga, and
Zn at an atomic ratio of 1:1:1 or 1:3:2 and a deposition gas
containing Ar and O.sub.2 (.sup.18O) at a flow rate ratio of 2:1.
The tungsten film was formed by a DC sputtering method with a
tungsten sputtering target and a 100 percent Ar gas used as a
deposition gas. Note that heat treatment was performed at
300.degree. C., 350.degree. C., 400.degree. C., and 450.degree. C.
each for one hour, and five samples including a sample which was
not subjected to heat treatment were compared with one another.
[0290] Here, the IGZO film formed with the sputtering target
containing In, Ga, and Zn at an atomic ratio of 1:1:1 is
crystalline, and the IGZO film formed with the sputtering target
containing In, Ga, and Zn at an atomic ratio of 1:3:2 is
amorphous.
[0291] As shown in FIGS. 17A and 17B, as the temperature of the
heat treatment is increased, oxygen of the oxide semiconductor film
is taken into the tungsten film despite the composition or
crystallinity of the oxide semiconductor film.
[0292] Since the fabrication process of the transistor involves
some heat treatment steps, oxygen vacancies are generated in a
region of the oxide semiconductor layer, which is in contact with
the source electrode or the drain electrode, and the region is
changed to an n-type. Thus, the n-type region can serve as a source
or a drain of the transistor.
[0293] FIGS. 18A and 18B each show the analysis results by SIMS in
samples which were each fabricated using a tantalum nitride film
instead of the tungsten film. The tantalum nitride film was formed
by a reactive sputtering method (a DC sputtering method) with a
tantalum sputtering target and a deposition gas containing Ar and
N.sub.2 at a flow rate ratio of 5:1. Note that heat treatment was
performed under four conditions similar to the above, and five
samples including a sample which was not subjected to heat
treatment were compared with one another.
[0294] FIG. 18A shows the analysis results by SIMS in samples which
were each fabricated with a stack of the IGZO film whose atomic
ratio of In to Ga and Zn was 1:1:1 and the tantalum nitride film.
In any of the samples, transfer of oxygen to the tantalum nitride
film was not observed and its behavior was different from that of
the sample with the tungsten film in FIG. 17A. FIG. 18B shows the
analysis results by SIMS in samples which were each formed with a
stack of the IGZO film whose atomic ratio of In to Ga and Zn was
1:3:2 and the tantalum nitride film. In any of the samples,
transfer of oxygen to the tantalum nitride film was not observed
and its behavior was different from that of the sample with the
tungsten film in FIG. 17B. Accordingly, it can be said that the
tantalum nitride film is a film that is not easily bonded to oxygen
or a film to which oxygen is not easily transferred.
[0295] FIGS. 19A and 19B each show the analysis results by SIMS in
samples which were each fabricated using a titanium nitride film
instead of the tungsten film. The titanium nitride film was formed
by a reactive sputtering method (a DC sputtering method) with a
titanium sputtering target and a 100 percent N.sub.2 gas used as a
deposition gas. Note that heat treatment was performed under four
conditions similar to the above, and five samples including a
sample which was not subjected to heat treatment were compared with
one another.
[0296] FIG. 19A shows the analysis results by SIMS in samples which
were each fabricated with a stack of the IGZO film whose atomic
ratio of In to Ga and Zn was 1:1:1 and the titanium nitride film.
In any of the samples, transfer of oxygen to the titanium nitride
film was not observed and its behavior was different from that of
the sample with the tungsten film in FIG. 17A. FIG. 19B shows the
analysis results by SIMS in samples which were each fabricated with
a stack of the IGZO film whose atomic ratio of In to Ga and Zn was
1:3:2 and the titanium nitride film. In either sample, transfer of
oxygen to the titanium nitride film was not observed and its
behavior was different from that of the sample with the tungsten
film in FIG. 17B. Accordingly, it can be said that the titanium
nitride film is a film that is not easily bonded to oxygen or a
film to which oxygen is not easily transferred.
[0297] Next, transfer of an impurity to an IGZO film was examined
by SIMS analysis, and results thereof are described.
[0298] FIGS. 20A and 20B each show SIMS analysis results of
profiles of nitrogen in a depth direction before and after heat
treatment in samples which were each fabricated with a tantalum
nitride film or a titanium nitride film formed over an IGZO film by
a sputtering method. Note that the IGZO film was formed by a DC
sputtering method with a sputtering target containing In, Ga, and
Zn at an atomic ratio of 1:1:1 and a deposition gas containing Ar
and O.sub.2 at a flow rate ratio of 2:1. The tantalum nitride film
and the titanium nitride film were formed by the above method. Note
that heat treatment was performed at 400.degree. C. for one hour,
and two samples including a sample which was not subjected to heat
treatment were compared with each other.
[0299] As shown in FIGS. 20A and 20B, in either sample, transfer of
nitrogen to the IGZO film was not observed. Therefore, nitrogen
which serves as a donor in the IGZO film is not widely transferred
to the IGZO film from the tantalum nitride film or the titanium
nitride film; accordingly, a channel formation region of the
transistor is not made to have n-type conductivity.
[0300] FIGS. 21A and 21B show SIMS analysis results of profiles of
tantalum and titanium, respectively, in a depth direction in
samples similar to those shown in FIGS. 20A and 20B as examples. As
shown in FIGS. 21A and 21B, transfer of tantalum or titanium to the
IGZO film was not observed. Accordingly, each of titanium and
tantalum which might serve as an impurity affecting the electrical
characteristics of the transistor is not widely transferred to the
IGZO film from the tantalum nitride film or the titanium nitride
film.
[0301] The above results showed that a film of a conductive nitride
such as tantalum nitride or titanium nitride is a film that is not
easily bonded to oxygen or a film to which oxygen is not easily
transferred, and nitrogen and a metal element in such a conductive
nitride are not easily transferred to the oxide semiconductor
film.
[0302] Note that this example can be combined as appropriate with
any of embodiments or the other example in this specification.
Example 2
[0303] In this example, measurement results of sheet resistance
values of an oxide semiconductor film after removal of a conductive
film which was formed over the oxide semiconductor film will be
described.
[0304] FIG. 22 shows measurement results of sheet resistance values
of samples each fabricated as follows with respect to a depth to
which an IGZO film was etched: the IGZO film was formed by a
sputtering method, a tungsten film or a titanium nitride film was
stacked over the IGZO film by a sputtering method, and then the
tungsten film or the titanium nitride film was removed. For
comparison, a sample in which a conductive film was not formed over
the IGZO film was also fabricated. Note that the IGZO film was
formed by a DC sputtering method with a sputtering target
containing In, Ga, and Zn at an atomic ratio of 1:1:1 and a
deposition gas containing Ar and O.sub.2 (.sup.18O) at a flow rate
ratio of 2:1. The tungsten film was formed by a DC sputtering
method with a tungsten sputtering target and a 100 percent Ar gas
used as a deposition gas. The titanium nitride film was formed by a
reactive sputtering method (a DC sputtering method) with a titanium
sputtering target and a 100 percent N.sub.2 gas used as a
deposition gas. The tungsten film and the titanium nitride film
were etched using hydrogen peroxide water. The IGZO film was etched
using a mixed solution of hydrogen peroxide water and ammonia. The
remaining thickness of the IGZO film after the etching was measured
using spectroscopic ellipsometry before and after the etching to
obtain the depth to which the IGZO film was etched.
[0305] In the sample in which the tungsten film was formed over the
IGZO film, the resistance of a region of the IGZO film, which was
formed to a depth of about 5 nm from the surface of the IGZO film,
was reduced as shown in FIG. 22. This suggests that a low-resistant
mixed layer of IGZO and tungsten is formed in a region of the IGZO
film, which is close to the surface thereof, and that an n-type
region is formed due to oxygen vacancies which exist in the above
region by transfer of oxygen of the IGZO film to the tungsten film,
for example.
[0306] On the other hand, in the sample in which the titanium
nitride film was formed over the IGZO film and the sample in which
a conductive film was not formed over the IGZO film, the resistance
of each of the IGZO films was not reduced. This suggests that
elements of titanium nitride are not easily transferred to the IGZO
film and that oxygen of the IGZO film is not easily transferred to
the titanium nitride film, for example.
[0307] FIG. 23A shows measurement results of sheet resistance
values of samples each fabricated as follows with respect to a
depth to which an IGZO film was etched: the IGZO film was formed by
a sputtering method, a tungsten film or a titanium nitride film was
stacked over the IGZO film by a sputtering method, heat treatment
was performed, and then the tungsten film or the titanium nitride
film was removed. For comparison, a sample in which a conductive
film was not formed over the IGZO film was also fabricated. Note
that the formation of the IGZO film, and the tungsten film or the
titanium nitride film and the removal of the tungsten film or the
titanium nitride film were performed in manners similar to those of
the above. The heat treatment was performed at 400.degree. C. under
a N.sub.2 atmosphere for one hour.
[0308] As shown in FIG. 23A, in any of the samples, the resistance
of the IGZO film was reduced. Here, in the sample in which the
tungsten film was formed over the IGZO film, the resistance of the
IGZO film was most reduced in the region close to the surface
thereof and reduced up to the greatest depth. This suggests that
the tungsten film takes oxygen of the IGZO film thereinto most
easily. Further, the behavior of the sample in which the titanium
nitride film was formed over the IGZO film was similar to that of
the sample in which a conductive film was not formed over the IGZO
film. In other words, in the sample in which the tungsten film was
formed over the IGZO film, the resistance of the IGZO film was
reduced by transfer of oxygen of the IGZO film to the tungsten
film, whereas in the sample in which the titanium nitride film was
formed over the IGZO film, oxygen released from the IGZO film was
transmitted through the titanium nitride film and released to the
upper side. This result well accords with the SIMS analysis results
shown in Example 1.
[0309] FIG. 23B shows measurement results of sheet resistance
values of samples each fabricated as follows with respect to a
depth to which an IGZO film was etched: a silicon oxide film was
formed by a sputtering method, the IGZO film was formed over the
silicon oxide film by a sputtering method, a tungsten film or a
titanium nitride film was stacked over the IGZO film by a
sputtering method, heat treatment was performed, and then the
tungsten film or the titanium nitride film was removed. For
comparison, a sample in which a conductive film was not formed over
the IGZO film was also fabricated. The silicon oxide film was
formed by a reactive sputtering method (a DC sputtering method)
with a silicon sputtering target and a 100 percent O.sub.2 gas used
as a deposition gas. Note that the formation of the IGZO film, and
the tungsten film or the titanium nitride film and the removal of
the tungsten film or the titanium nitride film were performed in
manners similar to those of the above. The heat treatment was
performed at 400.degree. C. under a N.sub.2 atmosphere for one
hour.
[0310] As shown in FIG. 23B, a region of the IGZO film, whose
resistance was reduced, had a smaller thickness in a thickness
direction than that obtained from the results shown in FIG. 23A.
This suggests that oxygen was supplied from the silicon oxide film
to the IGZO film by the heat treatment and oxygen vacancies in the
IGZO film were reduced; accordingly, the resistance of the IGZO
film was increased. With the use of a film which is capable of
releasing oxygen and provided below the IGZO film in this manner,
the thickness of a region of the IGZO film, whose resistance is
reduced, can be controlled.
[0311] As described above, there were the following findings. A
conductive film such as a tungsten film, which easily takes oxygen
thereinto, is formed in contact with an IGZO film, so that the
resistance of a region of the IGZO film, which is in contact with
and close to the conductive film, can be reduced. Moreover, the
region of the IGZO film, whose resistance is reduced, can be
increased in a depth direction by heat treatment. Further, a film
capable of releasing oxygen is formed close to the IGZO film,
whereby the thickness of the region whose resistance is reduced can
be controlled.
[0312] Note that this example can be combined as appropriate with
any of embodiments or the other example in this specification.
[0313] This application is based on Japanese Patent Application
serial No. 2012-230360 filed with the Japan Patent Office on Oct.
17, 2012, the entire contents of which are hereby incorporated by
reference.
* * * * *