U.S. patent application number 15/095338 was filed with the patent office on 2016-08-04 for plasma treating apparatus, substrate treating method, and method of manufacturing a semiconductor device.
The applicant listed for this patent is GEUNKYU CHOI, SUNGHO KANG, HAN KI LEE, Jaehee LEE, Sunyoung LEE. Invention is credited to GEUNKYU CHOI, SUNGHO KANG, HAN KI LEE, Jaehee LEE, Sunyoung LEE.
Application Number | 20160225586 15/095338 |
Document ID | / |
Family ID | 55302682 |
Filed Date | 2016-08-04 |
United States Patent
Application |
20160225586 |
Kind Code |
A1 |
KANG; SUNGHO ; et
al. |
August 4, 2016 |
PLASMA TREATING APPARATUS, SUBSTRATE TREATING METHOD, AND METHOD OF
MANUFACTURING A SEMICONDUCTOR DEVICE
Abstract
A substrate treating method may be performed by a plasma
treating apparatus. The substrate treating method may include:
providing a substrate on a platform in a lower portion of an inner
space of a process chamber; directing a first process gas upward
from a first nozzle formed at an inner wall of the process chamber
into an upper portion of the inner space, the first process gas
being an inert gas and wherein the first nozzle is an obliquely
upward-oriented nozzle structured to direct the first process gas
upward; directing a second process gas downward from a second
nozzle formed at a inner wall of the process chamber into a lower
portion of the inner space, the second process gas being hydrogen
gas and wherein the second nozzle is an obliquely downward-oriented
nozzle structured to direct the second process gas downward; and
applying a microwave to the upper portion of the inner space to
excite the first process gas and the second process gas into
plasma, and then processing the substrate.
Inventors: |
KANG; SUNGHO; (Osan-si,
KR) ; LEE; Sunyoung; (Yongin-si, KR) ; LEE;
Jaehee; (Daegu, KR) ; LEE; HAN KI;
(Hwaseong-si, KR) ; CHOI; GEUNKYU; (Hwaseong-si,
KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
KANG; SUNGHO
LEE; Sunyoung
LEE; Jaehee
LEE; HAN KI
CHOI; GEUNKYU |
Osan-si
Yongin-si
Daegu
Hwaseong-si
Hwaseong-si |
|
KR
KR
KR
KR
KR |
|
|
Family ID: |
55302682 |
Appl. No.: |
15/095338 |
Filed: |
April 11, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
14693873 |
Apr 23, 2015 |
9362137 |
|
|
15095338 |
|
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/302 20130101;
H01L 21/324 20130101; H01J 37/3244 20130101; H01L 21/31058
20130101; H01L 21/0262 20130101; H01J 37/32853 20130101; H01J
2237/332 20130101; H01L 21/3247 20130101; H01J 2237/335 20130101;
H01J 37/32192 20130101; H01J 2237/334 20130101 |
International
Class: |
H01J 37/32 20060101
H01J037/32 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 18, 2014 |
KR |
10-2014-0107130 |
Claims
1. A plasma treating apparatus comprising: a process chamber having
an inner space that is formed therein; a microwave applying unit
configured to excite a gas of the inner space into plasma; a first
nozzle formed in an inner wall of the process chamber, the first
nozzle structured to direct a first process gas toward an upper
portion of the inner space; and a second nozzle formed in the inner
wall of the process chamber, the second nozzle structured to direct
a second process gas toward a lower portion of the inner space.
2. The plasma treating apparatus of claim 1, wherein an end of the
first nozzle is formed in a ring shape along the inner wall of the
process chamber.
3. The plasma treating apparatus of claim 1, wherein the first
nozzle is formed to be inclined upward as going from an outside of
the process chamber to an inside.
4. The plasma treating apparatus of claim 1, wherein an end of the
second nozzle is formed in a ring shape along the inner wall of the
process chamber.
5. The plasma treating apparatus of claim 1, wherein the second
nozzle is formed to be inclined downward as going from an outside
of the process chamber to an inside.
6. The plasma treating apparatus of claim 1, wherein an end of the
first nozzle exposed to the inner space is disposed under an end of
the second nozzle exposed to the inner space.
7. The plasma treating apparatus of claim 1, wherein an end of the
first nozzle exposed to the inner space is disposed above an end of
the second nozzle exposed to the inner space.
8. The plasma treating apparatus of claim 1, wherein the first
nozzle comprises a plurality of spray parts that have a hole shape
and are directed toward the inner wall of the process chamber.
9. The plasma treating apparatus of claim 8, wherein the first
spray parts are arranged along a circumferential direction of the
inner wall of the process chamber.
10. The plasma treating apparatus of claim 8, wherein the second
nozzle comprises a plurality of second spray parts that have a hole
shape and are directed toward the inner wall of the process
chamber.
11. The plasma treating apparatus of claim 10, wherein the second
spray parts are arranged along a circumferential direction of the
inner wall of the process chamber.
12. The plasma treating apparatus of claim 11, wherein the first
spray parts and the second spray parts are arranged so as not to
overlap each other as viewed from above.
13. The plasma treating apparatus of claim 11, wherein ends of the
first spray parts, which are exposed to the inner wall, and ends of
the second spray parts, which are exposed to the inner wall, are
disposed at the same height.
14. The plasma treating apparatus of claim 1, wherein the first
process gas is an inert gas.
15. The plasma treating apparatus of claim 14, wherein the second
process gas is a hydrogen gas.
16-34. (canceled)
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This U.S. non-provisional patent application is a divisional
application of U.S. patent application Ser. No. 14/693,873, filed
Apr. 23, 2015, which claims priority under 35 U.S.C. .sctn.119 to
Korean Patent Application No. 10-2014-0107130, filed on Aug. 18,
2014, the entire contents of each of which are hereby incorporated
by reference.
BACKGROUND
[0002] The present disclosure herein relates to a plasma treating
apparatus and a substrate treating method.
[0003] Plasma is generated by high temperature, an intense electric
field, or an RF electromagnetic field, and includes an ionized gas
state comprised of ions, electrons, radicals or the like. In a
semiconductor device fabrication process, deposition and etching
processes may be performed by using a material in the plasma state.
Also, in the semiconductor device fabrication process, an annealing
process may be performed by using the material in the plasma
state.
[0004] Like this, the processes using the plasma state material are
performed by collisions of particles in an ionized state or a
radical state with a substrate. When particles colliding with the
substrate have excessively high energy, damage to the substrate may
be incurred.
SUMMARY
[0005] The present disclosure provides a plasma treating apparatus
and a substrate treating method for efficiently treating a
substrate.
[0006] Embodiments of the inventive concept provide plasma treating
apparatuses including: a process chamber having an inner space that
is formed therein; a microwave applying unit configured to excite a
gas of the inner space into plasma; a first nozzle formed in an
inner wall of the process chamber, the first nozzle structured to
direct a first process gas toward an upper portion of the inner
space; and a second nozzle formed in the inner wall of the process
chamber, the second nozzle structured to direct a second process
gas toward a lower portion of the inner space.
[0007] In other embodiments of the inventive concept, substrate
treating methods include: disposing a substrate on a platform in a
lower portion of an inner space of a process chamber; directing a
first process gas upward from a first nozzle formed at an inner
wall of the process chamber into an upper portion of the inner
space, the first process gas being an inert gas and wherein the
first nozzle is an obliquely upward-oriented nozzle structured to
direct the first process gas upward; and directing a second process
gas downward from a second nozzle formed at an inner wall of the
process chamber into a lower portion of the inner space, the second
process gas being hydrogen gas and wherein the second nozzle is an
obliquely downward-oriented nozzle structured to direct the second
process gas downward; and applying a microwave to the upper portion
of the inner space to excite the first process gas and the second
process gas into plasma, and then treating the substrate.
[0008] In other embodiments, a method includes: placing a substrate
on a platform in an inner space of a process chamber; directing a
first process gas upward from an inner wall of the process chamber
into an upper portion of the inner space, the first process gas
being an inert gas and the inner wall being structured to direct
the first process gas obliquely upward; directing a second process
gas downward from the inner wall of the process chamber into a
lower portion of the inner space where the substrate is located,
the second process gas being hydrogen gas and the inner wall being
structured to direct the second process gas obliquely downward;
applying a microwave to the upper portion of the inner space to
excite the first process gas and the second process gas into
plasma; and processing the substrate in the plasma environment.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] The accompanying drawings are included to provide a further
understanding of the inventive concept, and are incorporated in and
constitute a part of this specification. The drawings illustrate
exemplary embodiments of the inventive concept and, together with
the description, serve to explain principles of the inventive
concept. In the drawings:
[0010] FIG. 1 is a view illustrating a plasma treating apparatus
according to one embodiment of the inventive concept;
[0011] FIG. 2 is an enlarged view illustrating a gas supply unit in
a plasma treating apparatus in FIG. 1;
[0012] FIG. 3 is a cross-sectional view taken along line A-A' of
FIG. 2, according to one embodiment;
[0013] FIG. 4 is a cross-sectional view taken along line B-B' of
FIG. 2, according to one embodiment;
[0014] FIG. 5 is an enlarged view illustrating a gas supply unit
according to another embodiment of the inventive concept;
[0015] FIG. 6 is a cross-sectional view illustrating a first nozzle
in a gas supply unit according to a further embodiment of the
inventive concept;
[0016] FIG. 7 is a cross-sectional view illustrating a second
nozzle in a gas supply unit according to one embodiment of the
inventive concept;
[0017] FIG. 8 is a view illustrating an inner surface of a process
chamber in which a first spray part and a second spray part are
formed, according to one embodiment;
[0018] FIG. 9 is a side view illustrating a first spray part and a
second spray part overlapping each other, according to one
embodiment;
[0019] FIG. 10 is a cross-sectional view illustrating a first
nozzle in a gas supply unit according to another embodiment of the
inventive concept;
[0020] FIG. 11 is a cross-sectional view illustrating a second
nozzle in a gas supply unit according to one embodiment of the
inventive concept; and
[0021] FIG. 12 is a view illustrating an inner surface of a process
chamber in which a first spray part and a second spray part are
formed, according to one embodiment.
DETAILED DESCRIPTION
[0022] Hereinafter, embodiments of the inventive concept will be
described in detail with reference to accompanying drawings. The
invention may, however, be embodied in many different forms and
should not be construed as being limited to the embodiments set
forth herein. In the drawings, the thicknesses of layers and
regions are exaggerated for clarity. Like numbers may refer to like
elements throughout.
[0023] These example embodiments are just that--examples--and many
implementations and variations are possible that do not require the
details provided herein. It should also be emphasized that the
disclosure provides details of alternative examples, but such
listing of alternatives is not exhaustive. Furthermore, any
consistency of detail between various examples should not be
interpreted as requiring such detail--it is impracticable to list
every possible variation for every feature described herein. The
language of the claims should be referenced in determining the
requirements of the invention.
[0024] The terminology used herein is for the purpose of describing
particular embodiments only and is not intended to be limiting of
the invention. As used herein, the singular forms "a", "an" and
"the" are intended to include the plural forms as well, unless the
context clearly indicates otherwise. As used herein, the term
"and/or" includes any and all combinations of one or more of the
associated listed items and may be abbreviated as "/".
[0025] It will be understood that, although the terms first,
second, etc. may be used herein to describe various elements, these
elements should not be limited by these terms. Unless indicated
otherwise, these terms are only used to distinguish one element
from another, for example as a naming convention. For example, a
first chip could be termed a second chip, and, similarly, a second
chip could be termed a first chip without departing from the
teachings of the disclosure.
[0026] It will be further understood that the terms "comprises"
and/or "comprising," or "includes" and/or "including" when used in
this specification, specify the presence of stated features,
regions, integers, steps, operations, elements, and/or components,
but do not preclude the presence or addition of one or more other
features, regions, integers, steps, operations, elements,
components, and/or groups thereof.
[0027] It will be understood that when an element is referred to as
being "connected" or "coupled" to or "on" another element, it can
be directly connected or coupled to or on the other element or
intervening elements may be present. In contrast, when an element
is referred to as being "directly connected" or "directly coupled"
to another element, there are no intervening elements present.
Other words used to describe the relationship between elements
should be interpreted in a like fashion (e.g., "between" versus
"directly between," "adjacent" versus "directly adjacent," etc.).
However, the term "contact," as used herein refers to direct
contact (i.e., touching) unless the context indicates
otherwise.
[0028] Embodiments described herein will be described referring to
plan views and/or cross-sectional views by way of ideal schematic
views. Accordingly, the exemplary views may be modified depending
on manufacturing technologies and/or tolerances. Therefore, the
disclosed embodiments are not limited to those shown in the views,
but include modifications in configuration formed on the basis of
manufacturing processes. Therefore, regions exemplified in figures
may have schematic properties, and shapes of regions shown in
figures may exemplify specific shapes of regions of elements to
which aspects of the invention are not limited.
[0029] Spatially relative terms, such as "beneath," "below,"
"lower," "above," "upper" and the like, may be used herein for ease
of description to describe one element's or feature's relationship
to another element(s) or feature(s) as illustrated in the figures.
It will be understood that the spatially relative terms are
intended to encompass different orientations of the device in use
or operation in addition to the orientation depicted in the
figures. For example, if the device in the figures is turned over,
elements described as "below" or "beneath" other elements or
features would then be oriented "above" the other elements or
features. Thus, the term "below" can encompass both an orientation
of above and below. The device may be otherwise oriented (rotated
90 degrees or at other orientations) and the spatially relative
descriptors used herein interpreted accordingly.
[0030] Terms such as "same," "planar," or "coplanar," as used
herein when referring to orientation, layout, location, shapes,
sizes, amounts, or other measures do not necessarily mean an
exactly identical orientation, layout, location, shape, size,
amount, or other measure, but are intended to encompass nearly
identical orientation, layout, location, shapes, sizes, amounts, or
other measures within acceptable variations that may occur, for
example, due to manufacturing processes. The term "substantially"
may be used herein to reflect this meaning.
[0031] Unless otherwise defined, all terms (including technical and
scientific terms) used herein have the same meaning as commonly
understood by one of ordinary skill in the art to which this
disclosure belongs. It will be further understood that terms, such
as those defined in commonly used dictionaries, should be
interpreted as having a meaning that is consistent with their
meaning in the context of the relevant art and/or the present
application, and will not be interpreted in an idealized or overly
formal sense unless expressly so defined herein.
[0032] FIG. 1 is a view illustrating a plasma treating apparatus
according to one embodiment of the inventive concept.
[0033] Referring to FIG. 1, a plasma treating apparatus includes a
process chamber 100, a support member 200, a microwave applying
unit 300 and a gas supply unit 400.
[0034] The process chamber 100 has an inner space 101 that is
formed therein, and the inner space 101 is provided in a space
where a substrate W treating process is performed. An opening 110
may be formed on one sidewall of the process chamber 100. The
opening 110 is provided as an entrance through which the substrate
W is loaded and unloaded into and from the process chamber 100. The
opening 110 is opened and closed by a door 111.
[0035] The support member 200 is disposed, in one embodiment, on a
center of a lower portion in the process chamber 100 to support the
substrate W. The support member 200, also referred to herein as a
support structure, includes, for example, a susceptor 210 and an
electrostatic chuck 220. The support structure may include a
platform or stage on which the substrate W is placed. For example,
the chuck 220 may constitute a platform or stage.
[0036] The susceptor 210 provides a framework for the support
member 200. The susceptor 210 may be provided, for example, in a
barrel shape of which an upper surface is flat. The susceptor 210
may be provided as a conductor. In certain embodiments, the
susceptor 210 is electrically connected to a radio frequency (RF)
power source 211. For example, a lower surface of the susceptor 210
may be connected to a support rod 212, and the support rod 212 may
be connected to the RF power source 211. Also, a matching unit 213
may be disposed between the support rod 212 and the RF power source
211. The support rod 212 is provided as a conductor having a
cylinder, a polygonal column or a hollow barrel shape. The RF power
source 211 supplies electric energy for controlling energy of ions
used in treating the substrate W. The matching unit 213 performs an
impedance matching between the RF power source 211 and a load.
[0037] A sealing member 214 is disposed outside the support rod
212. The sealing member 214 may be provided, for example, in a
barrel shape, and opposite ends thereof may be connected to the
process chamber 100 and the matching unit 213, respectively.
[0038] The electrostatic chuck 220 may be disposed on an upper
surface of the susceptor 210. The electrostatic chuck 220 may be
formed, for example, of an insulating material, and include an
electrode 221 therein. The electrode 221 is connected to a power
source 223 through an electric wire 222. When a switch 224 disposed
on the electric wire 222 is turned on, and then electric power is
applied to the electrode 221, the substrate W may be adsorbed to
the electrostatic chuck 220 by a coulomb force.
[0039] A focus ring 230 disposed outside the electrostatic chuck
220 in a radial direction thereof, may be provided on an upper
surface of the susceptor 210. An upper surface of the focus ring
230 may be stepped such that an outer portion 231 is higher than an
inner portion 232. In one embodiment, the inner portion 232 of the
upper surface of the focus ring 230 is disposed at the same height
as an upper surface of the electrostatic chuck 220. The inner
portion 232 of the upper surface of the focus ring 230 supports an
edge region of the substrate W, which is disposed outside the
electrostatic chuck 220. The outer portion 231 of the focus ring
230 is provided so as to surround the edge region of the substrate
W.
[0040] A coolant path 216 may be formed in the susceptor 210. The
coolant path 216 is connected to a pipe line so that coolant is
circulated through the coolant path 216. The support member 200 and
the substrate W disposed on the support member 200 may be
controlled in temperature by coolant circulated through the coolant
path 216.
[0041] A supply path 226 is formed in the support member 200, and
is connected to an upper surface of the support member 200 The
supply path 226 supplies a heat transfer medium between a lower
surface of the substrate W and an upper surface of the support
member 200. The heat transfer medium may be, for example
helium.
[0042] The susceptor 210 may be supported by a support part 240 so
as to be spaced apart from a bottom of the process chamber 100. The
support part 240 may be formed, for example of an insulator. An
auxiliary support part 250 may be provided on an outer
circumference of the support part 240. The auxiliary support part
250 may extend in a barrel shape from the bottom of the process
chamber 100 in an upward direction. The auxiliary part 250 may be
formed, for example of a conductive material.
[0043] A discharge path 260 is formed between an inner wall of the
process chamber 100 and the auxiliary support part 250. A baffle
plate 261 having a ring shape may be disposed on an upper end or
upper portion of the discharge path 260.
[0044] At least one discharge hole 262 is formed on a lower portion
of a sidewall or lower wall of the process chamber 100. The
discharge hole 262 is connected to a pump 263. A valve 264 is
provided between the discharge hole 262 and the pump 263. An inside
pressure of the process chamber 100 may be reduced to a desired
vacuum level through the pump 263. Also, a reaction by-product
generated during a process and a gas remaining in the process
chamber 100 may be discharged outside the process chamber 100
through the pump 263.
[0045] A microwave applying unit 300 is configured to apply and
applies a microwave to an inside of the process chamber 100. In one
embodiment, the microwave applying unit 300 includes a microwave
power source 310, a waveguide 320, a coaxial converter 330, an
antenna member 340, a dielectric block 351, a dielectric plate 370,
and a cooling plate 380.
[0046] The microwave power source 310 is configured to generate and
generates a microwave. In an example, a microwave generated in the
microwave power source 310 may be in a transverse electric mode (TE
mode) having a frequency of 2.3 GHz to 2.6 GHz. The waveguide 320
is disposed on one side of the microwave power source 310. The
waveguide 320 is provided in a tube shape of which a cross-section
is a polygon or a circle. An inner surface of the waveguide 320 is
formed, for example of a conductor. In an example, the inner
surface of the waveguide 320 may be formed of gold or silver. The
waveguide 320 provides a passage through which a microwave
generated in the microwave power source 310 is transferred.
[0047] The coaxial converter 330 is disposed inside the waveguide
320. The coaxial converter 330 is disposed on an opposite side of
the microwave power source 310. One end of the coaxial converter
330 is fixed to an inner surface of the waveguide 320. In one
embodiment, the coaxial converter 330 may be provided in a cone
shape of which a cross-section area of a lower end is smaller than
that of an upper end. A microwave transferred through an inner
space 321 of the waveguide 320 is converted in mode in the coaxial
converter 330 and is transmitted in a downward direction. In an
example, the microwave may be converted from a transverse electric
mode (TE mode) to a transverse electromagnetic mode (TEM mode).
[0048] The antenna member 340 transmits the microwave converted in
mode in the coaxial converter 330 in a downward direction. The
antenna member 340, also referred to as an antenna structure,
includes an outer conductor 341, an inner conductor 342, and an
antenna 343. The outer conductor 341 is disposed on a lower portion
of the waveguide 320. A space 341a connected to an inner space of
the waveguide 320 is formed inside the outer conductor 341 in a
downward direction.
[0049] The inner conductor 342 is disposed inside the outer
conductor 341. In one embodiment, the inner conductor 342 is
provided in a rod having a cylinder shape, and a longitudinal
direction thereof is parallel to a vertical direction. An outer
circumference of the inner conductor 342 is spaced apart from an
inner surface of the outer conductor 341.
[0050] An upper end of the inner conductor 342 is fixed (e.g.,
attached) to a lower end of the coaxial converter 330. The inner
conductor 342 extends in a downward direction, and a lower end
thereof is disposed inside the process chamber 100. The lower end
of the inner conductor 342 is fixedly coupled to a center of the
antenna 343. The inner conductor 342 is vertically disposed on an
upper surface of the antenna 343.
[0051] The antenna 343 is provided in a plate shape. In an example,
the antenna may be provided in a thin circular plate. The antenna
343 is disposed so as to be opposed to the susceptor 210. A
plurality of slot holes are formed in the antenna 343.
[0052] The dielectric plate 370 is disposed on an upper portion of
the antenna 343. The dielectric plate 370 is formed of a dielectric
such as alumina, quartz or the like. A microwave transmitted in a
vertical direction from the microwave antenna 343 is transmitted in
a radial direction of the dielectric plate 370. The microwave
transmitted to the dielectric plate 370 is compressed in wavelength
to be resonated. The resonated microwave is transmitted into the
slot holes of the antenna 343. The microwave passing through the
antenna 343 may be converted from the transverse electromagnetic
mode (TEM) to a plane wave.
[0053] A cooling plate 380 is provided on an upper portion of the
dielectric plate 370. The cooling plate 380 cools the dielectric
plate 370. The cooling plate 380 may be formed of an aluminum
material. The cooling plate 380 may allow a cooling fluid to flow
into a cooling path 381 formed therein to cool the dielectric plate
370. A cooling type may be a water cooling type or an air cooling
type, for example.
[0054] The dielectric block 351 is provided on a lower portion of
the antenna 343. An upper surface of the dielectric plate 351 may
be spaced a predetermined gap from a lower surface of the antenna
343. Unlike this, the upper surface of the dielectric plate 351 may
contact the lower surface of the antenna 343. The dielectric plate
351 is formed of a dielectric such as alumina, quartz or the like.
The microwave passing through the slot holes of the antenna 343 is
emitted to an upper space 101a via the dielectric block 351. The
microwave has a gigahertz frequency. Therefore, in certain
embodiments, the microwave has a low transmittance, so it does not
reach a lower space 102.
[0055] FIG. 2 is an enlarged view illustrating a gas supply unit in
the plasma treating apparatus in FIG. 1, according to one exemplary
embodiment.
[0056] Referring to FIG. 2, a gas supply unit 400 includes a first
gas nozzle 410, a second gas nozzle 420, a first supply member 430
and a second supply member 440.
[0057] The nozzles 410 and 420 are disposed so as to be embedded in
a sidewall of the process chamber 100. The first nozzle 410 may be
disposed on a sidewall of a central portion of the process chamber
100, which is spaced apart from an upper surface of the support
member 200 and a lower surface of the dielectric block 351. For
example, from a vertical perspective, the nozzles 410 and 420 may
be located in a sidewall of the process chamber 100 at a central
portion vertically between a lower surface of the dielectric block
and an upper surface of the support member 200 (e.g., if the
vertical space is divided into thirds, the nozzles 410 and 420 can
be substantially within the middle third). However, other
configurations may be used. In one embodiment, the first nozzle 410
supplies a first process gas to the upper space 101a of the inner
space. The first process gas may be an inert gas. For example, the
first process gas may be one of an argon (Ar) gas, a neon (Ne) gas,
a helium (He) gas, a xenon (Xe) gas or the like. Also, the first
process gas may be a gas in which at least two gases of the above
gases are mixed with each other.
[0058] FIG. 3 is a cross-sectional view taken along line A-A' of
FIG. 2.
[0059] Referring to FIGS. 2 and 3, the first nozzle 410 is formed
on the sidewall of the process chamber 100 along a circumferential
direction of the process chamber 100. When an inner wall of the
process chamber 100 has a circular shape, the first nozzle 410 is
formed in a ring shape on the inner wall of the process chamber
100. The first nozzle 410 is formed to be inclined upward as going
from an outside of the process chamber 100 to an inside. Therefore,
the process gas sprayed from the first nozzle 410 is sprayed in a
ring shape toward the upper space 101a of the process chamber
100.
[0060] The first nozzle 410 is connected to the first supply member
430 through a first line 431. In one embodiment, the first supply
member 430 includes a storage tank storing the first process gas.
Also, the first supply member 430 may include a mass flow
controller (MFC) controlling a flux of the first process gas that
is supplied to the first nozzle 410. A first valve 432 opening and
closing the first line 431 may be provided on the first line 431.
An end of the first line 431 connected to the first nozzle 410 may
be provided to be inclined upward in the same direction as the
first nozzle 410.
[0061] In certain embodiments, the first line 431 includes a
plurality of outlets, which may also be described as a plurality of
lines, around the circumference of the process chamber 100 to
evenly release gas through the ring-shaped nozzle 410 into the
process chamber 100. For example, in one embodiment, a first supply
member 430 connects through a valve 432 to a first line 431 split
into a plurality of lines (e.g., after the valve), to introduce gas
into the process chamber 100. Each of the split lines may be angled
as shown, for example, in FIG. 2. The first supply member 430
combined with the valve 432 and the first line 431 (e.g., including
a plurality of split lines) may be referred to herein as a first
gas supply device.
[0062] FIG. 4 is a cross-sectional view taken along line B-B' of
FIG. 2.
[0063] Referring to FIGS. 2 and 4, the second nozzle 420 may be
disposed on a sidewall of a central portion of the process chamber
100, which is spaced apart from an upper surface of the support
member 200 and a lower surface of the dielectric block 351. The
second nozzle 420 is disposed above the first nozzle 410. The
second nozzle 420 supplies a second process gas to a lower space
101b of the inner space. The second process gas may be, for
example, a hydrogen gas.
[0064] The second nozzle 420 is formed on a sidewall of the process
chamber 100 along a circumferential direction of the process
chamber 100. When an inner wall of the process chamber 100 has a
circular shape, an end of the second nozzle 420 is formed in a ring
shape on the inner wall of the process chamber 100.
[0065] The second nozzle 420 is formed to be inclined upward as
going from an outside of the process chamber 100 to an inside.
Therefore, the second process gas sprayed from the second nozzle
420 intersects with the first process gas to be sprayed in a ring
shape toward the lower space 101b of the process chamber 100 in
which the support member 200 is disposed.
[0066] The second nozzle 420 is connected to the second supply
member 440 through a second line 441. In one embodiment, the second
supply member 440 includes a storage tank storing the second
process gas. Also, the second supply member 440 may include a mass
flow controller (MFC) controlling a flux of the second process gas
that is supplied to the second nozzle 420. A second valve 442
opening and closing the second line 441 may be provided on the
second line 441. An end of the second line 441 connected to the
second nozzle 420 may be provided to be inclined upward in the same
direction as the second nozzle 420.
[0067] In certain embodiments, the second line 441 includes a
plurality of outlets, which may also be described as a plurality of
lines, around the circumference of the process chamber 100 to
evenly release gas through the ring-shaped nozzle 420 into the
process chamber 100. For example, in one embodiment, a second
supply member 440 connects through a valve 442 to a second line 441
split into a plurality of lines (e.g., after the valve), to
introduce gas into the process chamber 100. Each of the split lines
may be angled as shown, for example, in FIG. 2. The second supply
member 440 combined with the valve 442 and the second line 441
(e.g., including a plurality of split lines) may be referred to
herein as a second gas supply device.
[0068] The first and second nozzles 410 and 420 may be formed, for
example, as first and second respective openings in the sidewall of
the process chamber 100. In certain embodiments, an additional
component may be placed in the openings for spraying the gas, but
in either case, a nozzle is formed. However, one benefit of using
the sidewall of the process chamber 100 itself as the nozzle
instead of using a separate component, is that it simplifies the
manufacturing process and can reduce the number of parts that may
need maintenance.
[0069] In certain embodiments, as shown, the openings in the
sidewall of the process chamber 100 may have an angled direction
with respect to a line perpendicular to the sidewall in a
horizontal direction. In certain embodiments, openings in the
sidewall of the process chamber 100 are structured such that gas
exiting the nozzle is directed in a direction angled with respect
to a line perpendicular to the side wall in a horizontal direction.
For example, the different nozzles may be configured to either
spray gas in an upward direction (with respect to that
perpendicular line) or a downward direction.
[0070] Since certain nozzles are described herein as having a ring
shape, those nozzles may be referred to as ring nozzles. For
example, each individual ring nozzle shown for example in FIGS. 3
and 4 extends around the circumference of the process chamber.
[0071] An annealing process using plasma (e.g., a plasma
environment) may be performed with respect to the substrate W for
improving roughness. In an example, a transistor may be formed on
the substrate W. A channel among elements constituting the
transistor accounts for a greatest proportion of total resistance
of the transistor. An increase of a scattering on a surface of the
substrate W according to roughness generated in treating the
substrate W, reduces mobility of carriers. The roughness of the
surface of the substrate W may be reduced through an annealing
process.
[0072] The annealing process using plasma may use a gas in a
radical state. In an example, when hydrogen in a radical state
operates on the surface of the substrate W, mobility of atoms on
the surface of the substrate W is increased, so that atoms on a
protrusion portion may be moved toward a lower portion. In a state
where only a hydrogen gas is introduced into the process chamber
100, when the hydrogen gas is excited to a plasma state, the plasma
state may be in an unstable state. Therefore, an inert gas together
with the hydrogen gas is introduced for stability of the plasma
state.
[0073] The inert gas introduced into the process chamber is also
excited into an ion or the like. The inert gas has a mass greater
than that of hydrogen. Also, the ion into which the inert gas is
excited, has straightness. Like this, the ion into which the inert
gas is excited, operates on the surface of the substrate W, and on
the contrary, the surface of the substrate W may be damaged to
worsen an operation property of the transistor included on the
substrate W.
[0074] In the plasma treating apparatus according to an embodiment
of the present disclosure, the first process gas that is an inert
gas, is supplied to the upper space 101a of the process chamber
100. The first process gas is excited into a plasma state by the
microwave applying unit 300.
[0075] The first process gas excited into the plasma state,
operates on the second process gas located in the lower space 101b.
The second process gas is excited into the plasma state by the
first process gas to then operate on the substrate W. The substrate
W is annealed by the second process gas in the plasma state. At
this time, the first process gas is prevented from moving toward
the lower space by the second process gas, so that an amount of the
first process gas moving toward the substrate W disposed on the
susceptor 210, may be minimized. Therefore, the first process gas
in the plasma state operates on the substrate W, thereby preventing
damage to the substrate W.
[0076] For example, in one embodiment, hydrogen gas may be injected
in an obliquely downward direction toward the substrate, using an
obliquely downward-oriented nozzle that directs the hydrogen gas
obliquely downward, while inert gas that provides stability for the
plasma state is introduced to the chamber in a slantingly upward
direction (e.g., obliquely upward) away from the substrate and
toward the microwave applying unit 300, using an obliquely
upward-oriented nozzle that directs the inert gas obliquely upward.
As a result, the injected inert gas may be separated from the
substrate while the hydrogen gas is adjacent to the substrate.
[0077] FIG. 5 is an enlarged view illustrating a gas supply unit
according to another embodiment of the inventive concept.
[0078] Referring to FIG. 5, a plasma supply unit 401 includes a
first nozzle 410a, a second nozzle 420a, a first supply member 430a
and a second supply member 440a.
[0079] The first nozzle 410a is disposed above the second nozzle
420a.
[0080] Configurations of the first supply member 430a and the
second supply member 440a, and connection relations thereof with
the first nozzle 410a and the second nozzle 420a other than
disposition relations of the first nozzle 410a and the second
nozzle 420a, may be provided in the similar or same manner as the
gas supply unit 400 of FIG. 1. As such, in the embodiment of FIG.
5, hydrogen gas and an inert gas may be supplied to the process
chamber 100 without crossing each other, such that one gas (e.g.,
an inert gas) may be supplied from an upper nozzle in an upward
direction toward a microwave applying unit, and a second gas (e.g.,
hydrogen) may be supplied from a lower nozzle in a downward
direction toward the substrate.
[0081] FIG. 6 is a cross-sectional view illustrating a first nozzle
in a gas supply unit according to another embodiment of the
inventive concept, and FIG. 7 is a cross-sectional view
illustrating a second nozzle in a gas supply unit according to this
additional embodiment.
[0082] Referring to FIGS. 6 and 7, a gas supply unit 402 includes a
first nozzle 410b, a second nozzle 420b, a first supply member 430b
and a second supply member 440b.
[0083] Configurations of the first supply member 430b and the
second supply member 440b, and connection relations thereof with
the first nozzle 410b and the second nozzle 420b may be provided in
the similar or same manner as the gas supply unit 400 of FIG.
1.
[0084] The first nozzle 410b includes a plurality of first spray
parts 411. The first spray parts 411 are provided in a hole shape
directed toward an inner wall of the process chamber 100, and
supply a first process gas to an inner space of the process chamber
100. The first spray parts 411 are formed to be inclined upward as
going from an outside of the process chamber 100 to an inside in
the similar manner as the first nozzle 410 of FIG. 2. The first
spray parts 411 may be arranged along a circumferential direction
of an inner wall of the process chamber 100. For example, the first
spray parts 411 may form a plurality of repeated openings, rather
than a single ring opening as in FIG. 3. Each of the repeated
openings may be inclined upward in a similar manner as in FIGS. 2
and 3. Each individual opening may be referred to herein as a
nozzle, or the entire set of repeated openings may be referred to
as a nozzle.
[0085] The second nozzle 420b includes a plurality of second spray
parts 421. The second spray parts 421 are provided in a hole shape
directed toward an inner wall of the process chamber 100, and
supply a second process gas to an inner space of the process
chamber 100. The second spray parts 421 are formed to be inclined
upward as going from an outside of the process chamber 100 to an
inside in the similar manner as the second nozzle 420 of FIG. 2.
The second spray parts 421 may be arranged along a circumferential
direction of an inner wall of the process chamber 100. For example,
the second spray parts 421 may form a plurality of repeated
openings, rather than a single ring opening as in FIG. 4. Each of
the repeated openings may be inclined upward in a similar manner as
in FIGS. 2 and 4. Each individual opening may be referred to herein
as a nozzle, or the entire set of repeated openings may be referred
to as a nozzle.
[0086] In addition, a similar structure such as shown in FIGS. 6
and 7 may be used in an embodiment such as depicted in FIG. 5.
[0087] FIG. 8 is a view illustrating an inner surface of a process
chamber in which a first spray part (e.g., nozzle) and a second
spray part (e.g., nozzle) are formed, and FIG. 9 is a side view
illustrating a first spray part and a second spray part overlapping
each other.
[0088] Referring to FIGS. 8 and 9, the first spray part 411 and the
second spray part 421 may be arranged so as not to overlap each
other as viewed from above. Therefore, even when a spray direction
of the first process gas and a spray direction of the second
process gas intersect with each other, a mutual interference
phenomenon may be minimized.
[0089] In the embodiment shown in FIGS. 8 and 9, ends (e.g.,
outlets) of the first spray part 411 and the second spray part 421
may be disposed at the same height on a sidewall of the process
chamber 100. As such, in one embodiment, the outlets for gas to be
sprayed in an upward direction alternate with outlets for gas to be
sprayed in a downward direction.
[0090] Also, the first spray part 411 may be disposed under the
second spray part 421 in the similar manner as the gas supply unit
400 of FIG. 2, such that the outlets are at different levels, but
mutual interference is still minimized.
[0091] Also, the first spray part 411 may be disposed above the
second spray part 421 in the similar manner as the gas supply unit
401 of FIG. 5.
[0092] FIG. 10 is a cross-sectional view illustrating a first
nozzle in a gas supply unit according to a further embodiment of
the inventive concept, and FIG. 11 is a cross-sectional view
illustrating a second nozzle in a gas supply unit according to that
embodiment.
[0093] Referring to FIGS. 10 and 11, a gas supply unit includes a
first nozzle, a second nozzle, a first supply member and a second
supply member.
[0094] Configurations of the first supply member 430c and the
second supply member 440c, and connection relations thereof with
the first nozzle 410c and the second nozzle 420c may be provided in
the similar or same manner as the gas supply unit 400 of FIG.
1.
[0095] The first nozzle 410c includes a plurality of first spray
parts 413. The first spray parts 413 are provided in a hole shape
directed toward an inner wall of the process chamber 100, and
supply a first process gas to an inner space of the process chamber
100. The first spray parts 413 are formed to be inclined upward as
going from an outside of the process chamber 100 to an inside in
the similar manner as the first nozzle 410 of FIG. 2. The first
spray parts 413 may be arranged along a circumferential direction
of an inner wall of the process chamber 100. Also, the first spray
parts 413 may be formed to be inclined with respect to a direction
directed toward a center of an inside of the process chamber 100 as
viewed from above. This may be referred to as sideways-inclined, or
sideways-obliquely oriented. Therefore, the first process gas
sprayed from the first spray part 413 may be supplied in a spiral
shape to the upper space 101a of the process chamber 100, rather
than concentrically toward a center of the process chamber 100.
[0096] The second nozzle 420c includes a plurality of second spray
parts 423. The second spray parts 423 are provided in a hole shape
directed toward an inner wall of the process chamber 100, and
supply a second process gas to an inner space of the process
chamber 100. The second spray parts 423 are formed to be inclined
upward as going from an outside of the process chamber 100 to an
inside in the similar manner as the second nozzle 420 of FIG. 2.
The second spray parts 423 may be arranged along a circumferential
direction of an inner wall of the process chamber 100. Also, the
first spray parts 423 may be formed to be inclined with respect to
a direction directed toward a center of an inside of the process
chamber 100 as viewed from above. Therefore, the second process gas
sprayed from the second spray part 423 may be supplied in a spiral
shape to the lower space 101b of the process chamber 100. A
sideways-inclined direction of the second spray part 423 may be
formed in the same direction to that of the first spray part 413.
Also, a sideways-inclined direction of the second spray part 423
may be formed in an opposite direction to that of the first spray
part 413 as viewed from above.
[0097] FIG. 12 is a view illustrating an inner surface of a process
chamber in which a first spray part and a second spray part are
formed.
[0098] Referring to FIG. 12, a first spray part 413 is disposed
under the second spray part 423. In one embodiment, the first spray
parts 413 direct sprayed gas upward and the second spray parts 423
direct sprayed gas downward. Also, an end of the first spray part
413 and an end of the second spray part 423 may be arranged so as
not to overlap each other vertically. Therefore, even when a spray
direction of a first process gas and a spray direction of a second
process gas intersect with each other, a mutual interference
phenomenon may be minimized.
[0099] Also, the first spray part 413 may be disposed above the
second spray part 423 in the similar manner as the gas supply unit
401 of FIG. 5.
[0100] Further, the first spray part 413 and the second spray part
423 may be arranged such that the end of the first spray and the
end of the second spray part 423 are disposed at the same height in
the similar manner as the gas supply unit 402 of FIG. 9. Further,
one or more of the different spray parts 421 and 423 may be
sideways-inclined, as discussed in connection with FIGS. 10 and
11.
[0101] While it is described that the support member 200 supports
the substrate W as well as the electrostatic chuck 220 in the
aforementioned embodiment, unlike this, the support member 200 may
support the substrate W in various manners. For example, the
substrate support member 200 may provided in a vacuum chuck that
vacuum-adsorbs the substrate W and maintains the substrate in the
vacuum absorption state. Other variations in the different
described features may be used without departing from the spirit
and scope of the disclosed embodiments.
[0102] Also, while it is described that the annealing process is
performed by using plasma in the aforementioned embodiment, the
substrate treating process is not limited thereto, and may instead
be applied to various substrate treating processes, for example, a
depositing process, an ashing process, an etching process, a
washing process and the like.
[0103] According to the various embodiments described herein, a
substrate may be efficiently treated.
[0104] In addition, the substrate may be used as part of a
semiconductor device. For example, in a method of manufacturing a
semiconductor device according to certain embodiments, after
providing a substrate in a process chamber 100 and performing one
of more of the substrate treating processes described above using
one of the nozzle embodiments described above in connection with
FIGS. 2-12 (e.g., for plasma treatment), the substrate may be
formed into a semiconductor device such as an integrated circuit on
a die (e.g., by performing various fabrication processes and
singulating the die from a wafer that forms the substrate). The
integrated circuit may form a semiconductor device such as a
semiconductor chip, and the semiconductor chip may be packaged into
a semiconductor device such as a semiconductor package (e.g.,
having a single chip on a package substrate, or multiple chips on a
package substrate) or a package-on-package device. Also, the
substrate may be processed to form a plurality of package
substrates that form part of semiconductor devices such as
packages.
[0105] The above detailed description exemplifies the present
invention. Further, the above contents only illustrate and describe
certain exemplary embodiments of the present invention and the
various embodiments can be used under various combinations,
changes, and environments. It will be appreciated by those skilled
in the art that substitutions, modifications and changes may be
made in these embodiments without departing from the principles and
spirit of the general inventive concept, the scope of which is
defined in the appended claims and their equivalents. The
above-mentioned embodiments are used to describe a best mode in
implementing the present invention. The present invention can be
implemented in a other modes, however, such as modes not described
herein or not described in the art. The detailed description of the
present invention does not intend to limit the present invention to
the disclosed embodiments.
* * * * *