U.S. patent application number 14/783736 was filed with the patent office on 2016-06-16 for vapor deposition mask, vapor deposition mask preparation body, method for producing vapor deposition mask, and method for producing organic semiconductor element.
The applicant listed for this patent is Dai Nippon Printing Co., Ltd.. Invention is credited to Katsunari OBATA, Hiromitsu OCHIAI, Toshihiko TAKEDA.
Application Number | 20160168691 14/783736 |
Document ID | / |
Family ID | 51689401 |
Filed Date | 2016-06-16 |
United States Patent
Application |
20160168691 |
Kind Code |
A1 |
TAKEDA; Toshihiko ; et
al. |
June 16, 2016 |
VAPOR DEPOSITION MASK, VAPOR DEPOSITION MASK PREPARATION BODY,
METHOD FOR PRODUCING VAPOR DEPOSITION MASK, AND METHOD FOR
PRODUCING ORGANIC SEMICONDUCTOR ELEMENT
Abstract
There are provided a vapor deposition mask capable of satisfying
both high definition and lightweight in upsizing and forming a
vapor deposition pattern with high definition while securing
strength, a method for producing a vapor deposition mask and a
vapor deposition mask preparation body capable of simply producing
the vapor deposition mask, and furthermore, a method for producing
an organic semiconductor element capable of producing an organic
semiconductor element with high definition. A metal mask 10 in
which a plurality of slits 15 are provided and a resin mask 20 are
stacked. Openings 25 required for composing a plurality of screens
are provided in the resin mask 20. The openings 25 correspond to a
pattern to be produced by vapor deposition. Each of the slits 15 is
provided at a position of overlapping with an entirety of at least
one screen.
Inventors: |
TAKEDA; Toshihiko; (Tokyo,
JP) ; OBATA; Katsunari; (Tokyo, JP) ; OCHIAI;
Hiromitsu; (Tokyo, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Dai Nippon Printing Co., Ltd. |
Tokyo |
|
JP |
|
|
Family ID: |
51689401 |
Appl. No.: |
14/783736 |
Filed: |
March 24, 2014 |
PCT Filed: |
March 24, 2014 |
PCT NO: |
PCT/JP2014/058049 |
371 Date: |
October 9, 2015 |
Current U.S.
Class: |
118/504 ;
427/556 |
Current CPC
Class: |
B23K 2103/50 20180801;
B23K 26/082 20151001; C23C 16/042 20130101; C23C 14/042 20130101;
B23K 2103/172 20180801; B23K 2101/40 20180801; B23K 26/40 20130101;
H01L 51/0011 20130101; B23K 26/0604 20130101; B23K 26/0661
20130101; B23K 26/382 20151001; H01L 27/3211 20130101 |
International
Class: |
C23C 16/04 20060101
C23C016/04 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 12, 2013 |
JP |
2013-084276 |
Apr 12, 2013 |
JP |
2013-084277 |
Mar 24, 2014 |
JP |
2014-059431 |
Claims
1. A vapor deposition mask for simultaneously forming vapor
deposition patterns for a plurality of screens, comprising: a metal
mask in which a plurality of slits are provided; and a resin mask,
the metal mask and the resin mask being stacked, wherein openings
required for composing the plurality of screens are provided in the
resin mask, the openings correspond to a pattern to be produced by
vapor deposition, and each of the slits is provided at a position
of overlapping with an entirety of at least one screen.
2. A vapor deposition mask comprising: a metal mask in which one
through hole is provided; and a resin mask in which a plurality of
openings corresponding to a pattern to be produced by vapor
deposition are provided, the metal mask and the resin mask being
stacked, wherein all of the plurality of openings are provided at a
position of overlapping with the one through hole.
3. A vapor deposition mask preparation body for obtaining a vapor
deposition mask including: a metal mask in which a plurality of
slits are provided; and a resin mask, the metal mask and the resin
mask being stacked, openings required for composing a plurality of
screens provided in the resin mask, the openings corresponding to a
pattern to be produced by vapor deposition, each of the slits
provided at a position of overlapping with an entirety of at least
one screen, wherein the metal mask in which the slits are provided
is stacked on one surface of a resin plate, and each of the slits
is provided at a position of overlapping with an entirety of the
openings which compose one screen and are finally provided in the
resin plate.
4. A vapor deposition mask preparation body for obtaining a vapor
deposition mask including: a metal mask in which one through hole
is provided; and a resin mask in which a plurality of openings
corresponding to a pattern to be produced by vapor deposition are
provided, the metal mask and the resin mask being stacked, all of
the plurality of openings provided at a position of overlapping
with the one through hole, wherein the metal mask in which slits
are provided is stacked on one surface of a resin plate, and each
of the one through hole is provided at a position of overlapping
with an entirety s of the openings which are finally provided in
the resin plate.
5. A method for producing a vapor deposition mask, comprising: a
step of preparing a resin plate-equipped metal mask which includes
a metal mask in which a plurality of slits are provided and a resin
plate stacked with each other; and a resin mask forming step of
forming openings required for composing a plurality of screens in
the resin plate by irradiation with laser from the metal mask side,
wherein as the metal mask, a metal mask in which the slit is
provided at a position of overlapping with an entirety of at least
one screen out of the plurality of screens is used.
6. A method for producing a vapor deposition mask, comprising: a
step of preparing a resin plate-equipped metal mask which includes
a metal mask in which one through hole is provided and a resin
plate stacked with each other; and a resin mask forming step of
forming a plurality of openings at a position of overlapping with
the one through hole in the resin plate by irradiation of laser
from the metal mask side.
7. The method for producing a vapor deposition mask according to
claim 5, wherein after fixing the resin plate-equipped metal mask
onto a frame, the resin mask forming step is performed.
8. A method for producing an organic semiconductor element,
comprising a step of forming a vapor deposition pattern on a vapor
deposition target by using a frame-equipped vapor deposition mask
in which a vapor deposition mask is fixed to a frame, wherein the
vapor deposition mask which is fixed to the frame in the step of
forming the vapor deposition pattern is a vapor deposition mask
including: a metal mask in which a plurality of slits are provided;
and a resin mask, the metal mask and the resin mask being stacked,
openings required for composing a plurality of screens are provided
in the resin mask, the openings correspond to a pattern to be
produced by vapor deposition, and each of the slits is provided at
a position of overlapping with an entirety of at least one
screen.
9. A method for producing an organic semiconductor element,
comprising a step of forming a vapor deposition pattern on a vapor
deposition target by using a frame-equipped vapor deposition mask
in which a vapor deposition mask is fixed to a frame, wherein the
vapor deposition mask which is fixed to the frame in the step of
forming the vapor deposition pattern is a vapor deposition mask
including: a metal mask in which one through hole is provided; and
a resin mask in which a plurality of openings corresponding to a
pattern to be produced by vapor deposition are provided, the metal
mask and the resin mask being stacked, and all of the plurality of
openings are provided at a position of overlapping with the one
through hole.
10. The method for producing a vapor deposition mask according to
claim 6, wherein after fixing the resin plate-equipped metal mask
onto a frame, the resin mask forming step is performed.
Description
TECHNICAL FIELD
[0001] The present invention relates to a vapor deposition mask, a
vapor deposition mask preparation body, a method for producing a
vapor deposition mask, and a method for producing an organic
semiconductor element.
BACKGROUND ART
[0002] Conventionally, in production of an organic EL element, a
vapor deposition mask that is composed of a metal formed by a
number of microscopic slits being arranged in parallel with one
another at microscopic spaces in a region that should be subjected
to vapor deposition, for example, has been used in formation of an
organic layer or a cathode electrode of an organic EL element.
While in the case of using the vapor deposition mask, the vapor
deposition mask is placed on a substrate front surface that should
be subjected to vapor deposition and is held by using a magnet from
a back surface, the rigidity of the slits is extremely small, and
therefore, distortion easily occurs to the slits when the vapor
deposition mask is held on the substrate front surface, which
becomes an obstacle to enhancement in definition or upsizing of the
products in which the slit lengths are large.
[0003] Various studies have been made on the vapor deposition masks
for preventing distortion of slits, and, for example, Patent
Literature 1 proposes a vapor deposition mask including a base
plate that also serves a first metal mask including a plurality of
openings, a second metal mask including a number of microscopic
slits in regions to cover the aforementioned openings, and a mask
pulling and holding device that positions the second metal mask on
the base plate in a state of being pulled in the longitudinal
direction of the slits. Namely, the vapor deposition mask with two
kinds of metal masks being combined is proposed. It is indicated
that according to the vapor deposition mask, slit precision can be
ensured without occurrence of distortion to the slits.
[0004] Incidentally, in recent years, with upsizing of the products
using organic EL elements or increase in substrate sizes, a demand
for upsizing is also growing with respect to vapor deposition
masks, and the metal plates for use in production of the vapor
deposition masks composed of metals are also upsized. However, with
the present metal processing technique, it is difficult to form
slits in a large metal plate with high precision, and even if
distortion in slit portions can be prevented by the method proposed
in the above-described Patent Literature 1 or the like, these
cannot respond to enhancement in definition of the slits. Further,
in the case of use of a vapor deposition mask composed of only a
metal, the weight thereof also increases with upsizing, and the
total mass including a frame also increases, which becomes a
hindrance to handling.
[0005] In the vapor deposition mask proposed above, in order to
reduce the weight of the vapor deposition mask, it is needed that
the thickness of the vapor deposition mask composed of a metal be
made small. However, in the case where the thickness of the vapor
deposition mask composed of a metal is made small, the strength of
the vapor deposition mask decreases by that amount, and there arise
the new problems that the vapor deposition mask suffers deformation
and that handling becomes difficult.
CITATION LIST
Patent Literature
[Patent Literature 1]
[0006] Japanese Patent Laid-Open No. 2003-332057
SUMMARY OF INVENTION
Technical Problem
[0007] The present invention is devised in view of the
above-mentioned circumstances, and primary objects thereof are to
provide a vapor deposition mask capable of satisfying both high
definition and lightweight in upsizing and forming a vapor
deposition pattern with high definition while the strength is
secured, to provide a method for producing a vapor deposition mask
and a vapor deposition mask preparation body capable of simply
producing the vapor deposition mask, and furthermore, to provide a
method for producing an organic semiconductor element capable of
producing an organic semiconductor element excellent in
precision.
Solution to Problem
[0008] According to the present invention to solve the
above-mentioned problems, there is provided a vapor deposition mask
for simultaneously forming vapor deposition patterns for a
plurality of screens, including: a metal mask in which a plurality
of slits are provided; and a resin mask, the metal mask and the
resin mask being stacked, wherein openings required for composing
the plurality of screens are provided in the resin mask, the
openings correspond to a pattern to be produced by vapor
deposition, and each of the slits is provided at a position of
overlapping with an entirety of at least one screen.
[0009] Moreover, according to the present invention to solve the
above-mentioned problems, there is provided a vapor deposition mask
including: a metal mask in which one through hole is provided; and
a resin mask in which a plurality of openings corresponding to a
pattern to be produced by vapor deposition are provided, the metal
mask and the resin mask being stacked, wherein all of the plurality
of openings are provided at a position of overlapping with the one
through hole.
[0010] Moreover, according to the present invention to solve the
above-mentioned problems, there is provided a vapor deposition mask
preparation body for obtaining a vapor deposition mask including: a
metal mask in which a plurality of slits are provided; and a resin
mask, the metal mask and the resin mask being stacked, openings
required for composing a plurality of screens provided in the resin
mask, the openings corresponding to a pattern to be produced by
vapor deposition, each of the slits provided at a position of
overlapping with an entirety of at least one screen, wherein the
metal mask in which the slits are provided is stacked on one
surface of a resin plate, and each of the slits is provided at a
position of overlapping with an entirety of the openings which
compose one screen and are finally provided in the resin plate.
[0011] Moreover, according to the present invention to solve the
above-mentioned problems, there is provided a vapor deposition mask
preparation body for obtaining a vapor deposition mask including: a
metal mask in which one through hole is provided; and a resin mask
in which a plurality of openings corresponding to a pattern to be
produced by vapor deposition are provided, the metal mask and the
resin mask being stacked, all of the plurality of openings provided
at a position of overlapping with the one through hole, wherein the
metal mask in which slits are provided is stacked on one surface of
a resin plate, and each of the one through hole is provided at a
position of overlapping with an entirety of the openings which are
finally provided in the resin plate.
[0012] Moreover, according to the present invention to solve the
above-mentioned problems, there is provided a method for producing
a vapor deposition mask, including: a step of preparing a resin
plate-equipped metal mask which includes a metal mask in which a
plurality of slits are provided and a resin plate stacked with each
other; and a resin mask forming step of forming openings required
for composing a plurality of screens in the resin plate by
irradiation with laser from the metal mask side, wherein as the
metal mask, a metal mask in which the slit is provided at a
position of overlapping with an entirety of at least one screen out
of the plurality of screens is used.
[0013] Moreover, according to the present invention to solve the
above-mentioned problems, there is provided method for producing a
vapor deposition mask, including: a step of preparing a resin
plate-equipped metal mask which includes a metal mask in which one
through hole is provided and a resin plate stacked with each other;
and a resin mask forming step of forming a plurality of openings at
a position of overlapping with the one through hole in the resin
plate by irradiation of laser from the metal mask side.
[0014] Moreover, in the above-mentioned producing method, after
fixing the resin plate-equipped metal mask onto a frame, the resin
mask forming step may be performed.
[0015] Moreover, according to the present invention to solve the
above-mentioned problems, there is provided a method for producing
an organic semiconductor element, including a step of forming a
vapor deposition pattern on a vapor deposition target by using a
frame-equipped vapor deposition mask in which a vapor deposition
mask is fixed to a frame, wherein the vapor deposition mask which
is fixed to the frame in the step of forming the vapor deposition
pattern is a vapor deposition mask including: a metal mask in which
a plurality of slits are provided; and a resin mask, the metal mask
and the resin mask being stacked, openings required for composing a
plurality of screens are provided in the resin mask, and each of
the slits is provided at a position of overlapping with an entirety
of at least one screen.
[0016] Moreover, according to the present invention to solve the
above-mentioned problems, there is provided a method for producing
an organic semiconductor element, including a step of forming a
vapor deposition pattern on a vapor deposition target by using a
frame-equipped vapor deposition mask in which a vapor deposition
mask is fixed to a frame, wherein the vapor deposition mask which
is fixed to the frame in the step of forming the vapor deposition
pattern is a vapor deposition mask including: a metal mask in which
one through hole is provided; and a resin mask in which a plurality
of openings corresponding to a pattern to be produced by vapor
deposition are provided, the metal mask and the resin mask being
stacked, and all of the plurality of openings are provided at a
position of overlapping with the one through hole.
Advantageous Effect of Invention
[0017] According to the vapor deposition mask of the present
invention, both high definition and lightweight in upsizing can be
satisfied, and a vapor deposition pattern with high definition can
be formed while the strength of the vapor deposition mask is
secured as a whole. Moreover, according to the vapor deposition
mask preparation body and the method for producing a vapor
deposition mask of the present invention, the vapor deposition mask
characteristic in the above can be simply produced. Moreover,
according to the method for producing an organic semiconductor
element of the present invention, an organic semiconductor element
can be produced excellent in precision.
BRIEF DESCRIPTION OF DRAWINGS
[0018] FIG. 1 is an elevation view of a vapor deposition mask of
Embodiment (A) as seen from a metal mask side.
[0019] FIG. 2 is a partial expanded cross-sectional view of the
vapor deposition mask shown in FIG. 1.
[0020] FIG. 3 is an elevation view of the vapor deposition mask of
Embodiment (A) as seen from the metal mask side.
[0021] FIG. 4 is an elevation view of the vapor deposition mask of
Embodiment (A) as seen from the metal mask side.
[0022] FIG. 5 is an elevation view of the vapor deposition mask of
Embodiment (A) as seen from the metal mask side.
[0023] FIG. 6 is a partial expanded cross-sectional view of the
vapor deposition mask of Embodiment (A).
[0024] FIG. 7 is an elevation view of the vapor deposition mask of
Embodiment (A) as seen from a resin mask side.
[0025] FIG. 8 is a schematic cross-sectional view showing relation
between a shadow and the thickness of the metal mask.
[0026] FIG. 9 is an elevation view of the vapor deposition mask of
Embodiment (A) as seen from the metal mask side.
[0027] FIG. 10 is a step chart for exemplarily explaining a method
for producing the vapor deposition mask of Embodiment (A). Notably,
all of the portions (a) to (c) are cross-sectional views.
[0028] FIG. 11 is an elevation view of a vapor deposition mask of
Embodiment (B) as seen from the metal mask side.
[0029] FIG. 12 is a partial expanded cross-sectional view of the
vapor deposition mask shown in FIG. 11.
[0030] FIG. 13 is an elevation view of the vapor deposition mask of
Embodiment (B) as seen from the metal mask side.
[0031] FIG. 14 is a partial expanded cross-sectional view of the
vapor deposition mask shown in FIG. 13.
[0032] FIG. 15 is an elevation view of the vapor deposition mask of
Embodiment (B) as seen from the metal mask side.
[0033] FIG. 16 is a partial expanded cross-sectional view of the
vapor deposition mask of Embodiment (B).
[0034] FIG. 17 is a schematic cross-sectional view showing relation
between the shadow and the thickness of the metal mask.
[0035] FIG. 18 is an elevation view of the vapor deposition mask of
Embodiment (B) as seen from the metal mask side.
[0036] FIG. 19 is a step chart for exemplarily explaining a method
for producing the vapor deposition mask of Embodiment (B). Notably,
portions (a) to (c) are cross-sectional views.
[0037] FIG. 20 is an elevation view of a frame-equipped vapor
deposition mask of an embodiment as seen from the resin mask
side.
[0038] FIG. 21 is an elevation view of a frame-equipped vapor
deposition mask of an embodiment as seen from the resin mask
side.
DESCRIPTION OF EMBODIMENTS
[0039] Hereafter, a vapor deposition mask 100 of an embodiment of
the present invention is specifically described with use of the
drawings separately for Embodiment (A) and Embodiment (B).
[0040] <Vapor Deposition Mask of Embodiment (A)>
[0041] As shown in FIG. 1 to FIG. 7 and FIG. 9, a vapor deposition
mask 100 of Embodiment (A) is a vapor deposition mask for
simultaneously forming vapor deposition patterns for a plurality of
screens, including: a metal mask 10 in which a plurality of slits
15 are provided; and a resin mask 20, the metal mask 10 and the
resin mask 20 stacked, wherein openings 25 required for composing
the plurality of screens are provided in the resin mask 20, and
each of the slits 15 is provided at a position of overlapping with
an entirety of at least one screen. Notably, FIG. 1, FIG. 3 to FIG.
5 and FIG. 9 are elevation views of the vapor deposition mask of
Embodiment (A) as seen from the metal mask side. FIG. 2 and FIG. 6
are partial expanded schematic cross-sectional views of the vapor
deposition mask shown in FIG. 1.
[0042] The vapor deposition mask 100 of Embodiment (A) is a vapor
deposition mask used for simultaneously forming vapor deposition
patterns for a plurality of screens. One vapor deposition mask 100
can simultaneously form vapor deposition patterns compatible with a
plurality of products. "Openings" stated in the present
specification mean patterns to be produced with use of the vapor
deposition masks of Embodiment (A) and Embodiment (B). For example,
when the relevant vapor deposition mask is used for forming an
organic layer in an organic EL display, the shape of the openings
25 is a shape of the relevant organic layer. In the vapor
deposition masks 100 of Embodiment (A) and Embodiment (B), by a
vapor deposition material released from a vapor deposition source
passing through the openings 25, the vapor deposition patterns
corresponding to the openings 25 are formed on a vapor deposition
target. Moreover, "one screen" is constituted of an aggregate of
openings 25 corresponding to one product. When the relevant one
product is an organic EL display, an aggregate of organic layers
required for forming one organic EL display, in other words, an
aggregate of openings 25 to be the organic layer is "one screen".
Further, in the vapor deposition mask 100 of Embodiment (A), in
order to simultaneously form the vapor deposition patterns for the
plurality of screens, the above-mentioned "one screen" is arranged
for each of the plurality of screens in the resin mask 20 at
predetermined intervals. Namely, in the resin mask 20, the openings
25 required for composing the plurality of screens are
provided.
[0043] The vapor deposition mask of Embodiment (A) includes the
metal mask 10 in which the plurality of slits 15 are provided, the
metal mask stacked on one surface of the resin mask, wherein each
of the slits of the metal mask 10 is provided at the position of
overlapping with the entirety of at least one screen. In other
words, it is characterized in that between the openings 25 required
for composing one screen, metal line portions which have the same
length as the length of the slit 15 in the lengthwise direction and
have the same thickness as that of the metal mask 10 between the
openings 25 adjacent in the crosswise direction, or metal portions
which have the same length as the length of the slit 15 in the
crosswise direction and have the same thickness as that of the
metal mask 10 in 25 between the openings adjacent in the lengthwise
direction do not exist. Hereafter, the metal line portions which
have the same length as the length of the slit 15 in the lengthwise
direction and have the same thickness as that of the metal mask 10
and the metal line portions which have the same length as the
length of the slit 15 in the crosswise direction and have the same
thickness as that of the metal mask 10 are sometimes collectively
referred to simply as metal portions.
[0044] According to the vapor deposition mask 100 of Embodiment
(A), even when the dimension of the openings 25 required for
composing one screen and the pitch between the openings 25
composing one screen are made small, for example, even when the
dimension of the openings 25 and the pitch between the openings 25
are made extremely fine in order to form a screen exceeding 400
ppi, interference due to the above-mentioned metal portions can be
prevented and an image with high definition can be formed. Notably,
when one screen is divided by a plurality of slits, in other words,
when the metal line portions exist between the openings 25
composing one screen, as the pitch between the openings 25
composing one screen is smaller, the metal portions existing
between the openings 25 are needed to be finer. However, when the
metal portions existing between the openings 25 composing one
screen are made fine, a frequency at which the relevant metal
portions suffer rupture is high, and the metal portions suffering
rupture sometimes affect disadvantageously at the time of vapor
deposition.
[0045] Moreover, when the metal portions exist between the openings
25 composing one screen, the relevant metal portions cause
generation of a shadow and make formation of a screen with high
definition difficult. Notably, the shadow is a phenomenon that a
part of the vapor deposition material released from the vapor
deposition source collides with the inner wall surface of the slit
15 of the metal mask 10 and does not reach the vapor deposition
target, and thereby, a portion without vapor deposition that has a
film thickness smaller than the intended vapor deposition film
thickness arises. In particular, as the shape of the openings 25 is
finer, the influence due to the shadow caused by the metal portions
existing between the openings 25 in one screen is larger. In other
words, in the vapor deposition mask of Embodiment (A), it is in
that the slit is provided at the position of overlapping with the
entirety of at least one screen, that is, metal portions are caused
not to exist between the openings 25 composing one screen, and
thereby, durability of the vapor deposition mask and prevention of
the influence of a shadow are achieved.
[0046] Moreover, the vapor deposition mask 100 of Embodiment (A)
can be lighter in weight as compared with a conventional vapor
deposition mask. Specifically, when the mass of the vapor
deposition mask 100 of Embodiment (A) and the mass of a
conventionally known vapor deposition mask composed of only metal
are compared on the assumption that the thicknesses of the vapor
deposition masks are the same as a whole, the mass of the vapor
deposition mask 100 of Embodiment (A) is lighter by an amount by
which the metal material of the conventionally known vapor
deposition mask is partially replaced with a resin material.
Moreover, in order to reduce weight by using the vapor deposition
mask composed of only metal, there are a requirement that the
thickness of the relevant vapor deposition mask should be made
small and the similar requirement, but in the case where the
thickness of the vapor deposition mask is made small, there can
arise the case where distortion is generated in the vapor
deposition mask and the case where durability deteriorates when
upsizing the vapor deposition mask. Meanwhile, according to the
vapor deposition mask of Embodiment (A), even when the thickness of
the vapor deposition mask is made large as a whole to satisfy
distortion and durability in upsizing, reduction in weight can be
achieved more than the vapor deposition mask formed of only metal
by the presence of the resin mask 20. Hereafter, each of these is
specifically described. The same holds true for the vapor
deposition mask of Embodiment (B) mentioned later.
[0047] (Resin Mask Constituting Vapor Deposition Mask of Embodiment
(A))
[0048] For the resin mask 20 constituting the vapor deposition mask
of Embodiment (A), a conventionally known resin material can be
properly selected and used, and while the material is not specially
limited, a material that enables formation of the opening 25 with
high definition by laser processing or the like, has a low rate of
dimensional change and a low rate of humidity absorption under heat
and with passage of time, and is lightweight, is preferably used.
As such materials, a polyimide resin, a polyamide resin, a
polyamide-imide resin, a polyester resin, a polyethylene resin, a
polyvinylalcohol resin, a polypropylene resin, a polycarbonate
resin, a polystyrene resin, a polyacrylonitrile resin, an
ethylene-vinyl acetate copolymer resin, an ethylene-vinyl alcohol
copolymer resin, an ethylene-methacrylic acid copolymer resin, a
polyvinyl chloride resin, a polyvinylidene chloride resin,
cellophane, an ionomer resin and the like can be cited. Among the
materials shown in the above, the resin materials with the thermal
expansion coefficients of 16 ppm/.degree. C. or less are
preferable, the resin materials with the rates of humidity
absorption of 1.0% or less are preferable, and the resin materials
including both conditions are especially preferable. The resin mask
using this resin material can improve dimensional accuracy of the
opening 25, and enables a rate of dimensional change and a rate of
humidity absorption under heat and with passage of time to be
small. In the vapor deposition mask of Embodiment (A), the resin
mask 20 is composed of the resin material as mentioned above which
enables formation of the opening 25 with high definition as
compared with a metal material. This can make the vapor deposition
mask 100 have the opening 25 with high definition. The same holds
true for the vapor deposition mask of Embodiment (B).
[0049] While the thickness of the resin mask 20 is not specially
limited, the resin mask 20 is preferably as thin as possible in
order to prevent a vapor deposition portion with a film thickness
smaller than the intended vapor deposition film thickness, a
so-called shadow, from arising when vapor deposition is performed
with use of the vapor deposition mask 100 of Embodiment (A).
However, when the thickness of the resin mask 20 is less than 3
.mu.m, a defect such as a pinhole easily occurs, and the risk of
deformation or the like increases. Meanwhile, in the case of
exceeding 25 .mu.m, generation of a shadow can arise. With this
point taken into consideration, the thickness of the resin mask 20
is preferably from 3 .mu.m to 25 .mu.m inclusive. By setting the
thickness of the resin mask 20 within this range, the defect such
as a pinhole and the risk of deformation or the like can be
reduced, and generation of a shadow can be effectively prevented.
In particular, the thickness of the resin mask 20 is set to be from
3 .mu.m to 10 .mu.m inclusive, more preferably, from 4 .mu.m to 8
.mu.m inclusive, whereby the influence of a shadow at the time of
forming a high-definition pattern exceeding 400 ppi can be
prevented more effectively. Moreover, in the vapor deposition mask
of Embodiment (A), even when the thickness of the resin mask 20 is
made small within the above-mentioned preferable range, the
presence of the metal mask 10 provided on the resin mask 20 can
satisfy durability and handling ability of the entirety of the
vapor deposition mask 100. The same holds true for the vapor
deposition mask of Embodiment (B).
[0050] Notably, in the vapor deposition mask 100 of Embodiment (A),
the metal mask 10 and the resin mask 20 may be directly bonded, or
may be bonded via an adhesive layer, and when the metal mask 10 and
the resin mask 20 are bonded via the adhesive layer, with the
above-mentioned point of the shadow taken into consideration, the
total thickness of the resin mask 20 and the adhesive layer is
preferably set to be within a range from 3 .mu.m to 25 .mu.m
inclusive, preferably from 3 .mu.m to 10 .mu.m inclusive, and
particularly preferably from 4 .mu.m to 8 .mu.m inclusive. The same
holds true for the vapor deposition mask of Embodiment (B).
[0051] Moreover, since the vapor deposition mask 100 of Embodiment
(A) has a configuration in which the above-mentioned resin mask 20
and the metal mask 10 are stacked, the presence of the metal mask
10 improves durability of the entirety of the vapor deposition
mask, thereby, achieving handling performance and prevention of
rupture and deformation. The same holds true for the vapor
deposition mask of Embodiment (B).
[0052] Next, referring to FIG. 1 and FIG. 3 to FIG. 6, the openings
25 composing one screen are exemplarily described. Notably, the
region obtained by closing with a broken line in the shown modes is
one screen. In the shown modes, while an aggregate of a small
number of openings 25 is one screen for convenience of description,
not limited to these modes, for example, the openings 25 for
millions of pixels may present in one screen, where one opening 25
is one pixel.
[0053] In the mode shown in FIG. 1, one screen is composed of an
aggregate of openings 25 having a plurality of openings 25 provided
in the lengthwise direction and the crosswise direction. In the
mode shown in FIG. 3, one screen is composed of an aggregate of
openings 25 having a plurality of openings 25 provided in the
crosswise direction. Moreover, in the mode shown in FIG. 4, one
screen is composed of an aggregate of openings 25 having a
plurality of openings 25 in the lengthwise direction. Further, in
FIG. 1, FIG. 3 and FIG. 4, the slit 15 is provided at a position of
overlapping with the entirety of one screen.
[0054] As described above, the slit 15 of the metal mask 10 may be
provided at a position of overlapping with only one screen, or as
shown in FIG. 5(a) and FIG. 5(b), the slit 15 may be provided at a
position of overlapping with the entirety of two or more screens.
In FIG. 5(a), in the resin mask shown in FIG. 1, the slit 15 is
provided at a position of overlapping with the entirety of two
screens continuous in the crosswise direction. In FIG. 5(b), the
slit 15 is provided at a position of overlapping with the entirety
of three screens continuous in the lengthwise direction. Notably,
in the case of overlapping one slit with the entirety of a
plurality of screens, as a ratio of a region occupied by the slits
15 relative to the entire surface of the metal mask 10 is larger, a
ratio of a metal portion provided on the resin mask occupying
relative thereto decreases more, and durability of the entirety of
the vapor deposition mask 100 tends to decrease more. Accordingly,
in the case of overlapping one slit with the entirety of a
plurality of screens, the setting is needed to be properly done
with durability of the entirety of the vapor deposition mask 100
taken into consideration.
[0055] Next, exemplified by the mode shown in FIG. 1, pitches
between the openings 25 composing one screen and pitches between
the screens are described. The pitches between the openings 25
composing one screen and the dimension of the opening 25 are not
specially limited, but can be properly set depending on the pattern
to be produced by vapor deposition. For example, when forming the
vapor deposition pattern with high definition of 400 ppi, a pitch
(P1) in the crosswise direction and a pitch (P2) in the lengthwise
direction between the neighboring openings 25 out of the openings
25 composing one screen are approximately 60 .mu.m. Moreover, the
dimension of the opening is approximately 500 .mu.m to 1000
.mu.m.sup.2. Moreover, one opening 25 is not limited to correspond
to one pixel, but, for example, a plurality of pixels can be
collectively one opening 25 depending on a pixel arrangement.
[0056] While a pitch (P3) in the crosswise direction and a pitch
(P4) in the lengthwise direction between the screens are not
specially limited, as shown in FIG. 1, when one slit 15 is provided
at the position of overlapping with the entirety of one screen,
metal portions are to exist between the screens. Accordingly, when
the pitch (P3) in the crosswise direction and the pitch (P4) in the
lengthwise direction between the screens are smaller than or
substantially equal to the pitch (P1) in the crosswise direction
and the pitch (P2) in the lengthwise direction of the openings 25
provided in one screen, the metal portions existing between the
screens is liable to break. Accordingly, with this point taken into
consideration, the pitch (P3, P4) between the screens is preferably
wider than the pitch (P1, P2) between the openings 25 composing one
screen. An example of the pitch (P3, P4) between the screens is
approximately 1 mm to 100 mm. Notably, the pitch between the
screens means the pitch between the neighboring openings in one
screen and another screen adjacent to the relevant one screen.
[0057] Notably, as shown in FIG. 5, when one slit 15 is provided at
the position of overlapping with the entirety of two or more
screens, metal portions are not to exist between the plurality of
screens provided in the one slit 15. Accordingly, in this case, the
pitch between the two or more screens provided at the position of
overlapping with the one slit 15 may be substantially equal to the
pitch between the openings 25 composing one screen.
[0058] The sectional shape of the opening 25 is not specially
limited, and end surfaces that face each other of the resin mask
forming the opening 25 may be substantially parallel to each other,
but as shown in FIG. 2 and FIG. 6, the sectional shape of the
opening 25 is preferably the shape having broadening toward a vapor
deposition source. In other words, it preferably has a taper
surface having broadening toward the metal mask 10 side. By making
the sectional shape of the opening 25 have the above configuration,
a shadow can be prevented from being generated in the pattern that
is produced by vapor deposition when vapor deposition is performed
with use of the vapor deposition mask of Embodiment (A). While a
taper angle .theta. can be properly set with the thickness or the
like of the resin mask 20 taken into consideration, an angle formed
by a straight line connecting a lower bottom distal end in the
opening of the resin mask and an upper bottom distal end of the
opening of the same resin mask and the bottom surface of the resin
mask 20, in other words, an angle (.theta.) formed by an inner wall
surface of the opening 25 and a surface of the resin mask 20 on the
side that is not in contact with the metal mask 10 (a lower surface
of the resin mask in the shown mode) in the cross section in the
thickness direction of the inner wall surface composing the opening
25 of the resin mask 20 is preferably within a range of 5.degree.
to 85.degree., more preferably within a range of 15.degree. to
80.degree., further preferably within a range of 25.degree. to
65.degree.. In particular, within this range, it is preferably an
angle smaller than a vapor deposition angle of a vapor deposition
machine to be used. Furthermore, in FIG. 2 and FIG. 6, an end
surface that forms the opening 25 shows a linear shape, but is not
limited thereto, and may be in a curved shape protruding outward,
in other words, a shape of the entirety of the opening 25 may be in
a bowl shape. The opening 25 that has the sectional shape like this
can be formed by performing multistage laser irradiation that
properly adjusts the irradiation position of the laser and
irradiation energy of the laser at the time of formation of the
opening 25, or changes the irradiation position stepwise, for
example. Notably, FIG. 2 and FIG. 6 are partial expanded
cross-sectional views exemplarily showing the vapor deposition mask
100 in the mode shown in FIG. 1. The same holds true for the vapor
deposition mask of Embodiment (B), and FIG. 2 and FIG. 6 only have
to be read as FIG. 12 and FIG. 16.
[0059] Since a resin material is used for the resin mask 20,
formation of the opening 25 is enabled without using the processing
methods that are used in the conventional metal processing, for
example, the processing methods such as etching and cutting. In
other words, the method for forming the opening 25 is not specially
limited, and the opening 25 can be formed by using various
processing methods, for example, a laser processing method capable
of forming the opening 25 with high definition, precision press
processing, photolithography processing and the like. The method
for forming the opening 25 by a laser processing method or the like
will be described later. The same holds true for the vapor
deposition mask of Embodiment (B).
[0060] As the etching processing method, for example, a wet etching
method such as a spray etching method that sprays an etching agent
at a predetermined spray pressure from an injection nozzle, an
immersion etching method that immerses an object in an etching
solution filled with an etching agent, and a spin etching method
that drops an etching agent, and a dry etching method using gas,
plasma and the like can be used. The same holds true for the vapor
deposition mask of Embodiment (B).
[0061] Moreover, in the vapor deposition mask of Embodiment (A),
since the resin mask 20 is used as the configuration of the vapor
deposition mask 100, when vapor deposition is performed with use of
this vapor deposition mask 100, exceedingly high heat is applied to
the opening 25 of the resin mask 20, and risks that gas is
generated from the end surface forming the opening 25 of the resin
mask 20 (refer to FIG. 6) to lower the degree of vacuum in the
vapor deposition apparatus can arise. Accordingly, with this point
taken into consideration, as shown in FIG. 6, a barrier layer 26 is
preferably provided on the end surface forming the opening 25 of
the resin mask 20. By forming the barrier layer 26, gas can be
prevented from being generated from the end surface forming the
opening 25 of the resin mask 20. The same holds true for the vapor
deposition mask of Embodiment (B), and FIG. 6 only has to be read
as FIG. 16.
[0062] As the barrier layer 26, a thin film layer or a vapor
deposition layer of an inorganic oxide, an inorganic nitride or
metal can be used. As the inorganic oxide, an oxide of aluminum,
silicon, indium, tin or magnesium can be used, and as the metal,
aluminum or the like can be used. The thickness of the barrier
layer 26 is preferably approximately 0.05 .mu.m to 1 .mu.m. The
same holds true for the vapor deposition mask of Embodiment
(B).
[0063] Furthermore, the barrier layer 26 preferably covers the
vapor deposition source-side surface of the resin mask 20
(not-shown). By covering the vapor deposition source-side surface
of the resin mask 20 with the barrier layer 26, barrier ability is
further improved. In the case of an inorganic oxide and an
inorganic nitride, the barrier layer is preferably formed by
various PVD (physical vapor deposition) methods and CVD (chemical
vapor deposition) methods. In the case of metal, the formation is
preferably performed by various PVD methods such as a sputtering
method, ion plating, a vacuum vapor deposition method, in
particular, the vacuum vapor deposition method. Notably, the vapor
deposition source-side surface of the resin mask 20 here may be the
entirety of the surface on the vapor deposition source side of the
resin mask 20, or may be only the part that is exposed from the
metal mask on the surface of the resin mask 20 on the vapor
deposition source side. The same holds true for the vapor
deposition mask of Embodiment (B).
[0064] Moreover, in the case where a magnet or the like is disposed
at a rear side of the vapor deposition target to attract the vapor
deposition mask 100 at a front side of the vapor deposition target
with magnetic force, and thereby, the vapor deposition mask of
Embodiment (A) and the vapor deposition target are brought into
close contact with each other when vapor deposition is performed on
the vapor deposition target with use of the vapor deposition mask
of Embodiment (A), a magnetic layer (not-shown) composed of a
magnetic material is preferably provided on the side, of the resin
mask 20, that is not in contact with the metal mask 10. By
providing the magnetic layer, the relevant magnetic layer and the
vapor deposition target are caused to be attracted with magnetic
force, the vapor deposition mask of Embodiment (A) and the vapor
deposition target are sufficiently brought into close contact with
each other without a gap, and thickening of the vapor deposition
pattern which can arise caused by the gap between the vapor
deposition mask of Embodiment (A) and the vapor deposition target
can be prevented. Specifically, in the vapor deposition mask of
Embodiment (A), since metal portions do not exist between the
openings 25 composing one screen, the vapor deposition mask 100 of
Embodiment (A) and the vapor deposition target cannot be brought
into close contact with each other in the region corresponding to
one screen. Meanwhile, in the case of providing the magnetic layer,
since the vapor deposition mask 100 of Embodiment (A) and the vapor
deposition target can be brought into close contact with each other
also in the region where the relevant magnetic layer is provided,
by providing the magnetic layer on the region corresponding to one
screen of the resin mask 20, close contact of the vapor deposition
mask 100 of Embodiment (A) and the vapor deposition target with
each other can be excellent. The thickening of the vapor deposition
pattern is a phenomenon that a vapor deposition pattern with a
larger shape than that of the intended vapor deposition pattern is
formed. Notably, in the case where the vapor deposition mask 100 of
Embodiment (A) and the vapor deposition target are brought into
contact with each other by a method other than that of attraction
with magnetic force, to provide the magnetic layer is not specially
needed. The same holds true for the vapor deposition mask of
Embodiment (B).
[0065] As the material of the magnetic layer, for example, iron,
nickel, cobalt, alloy containing these metals, or the like can be
cited. The thickness of the magnetic layer is not specially
limited, but is preferably from 0.05 .mu.m to 1 .mu.m inclusive.
The same holds true for the vapor deposition mask of Embodiment
(B).
[0066] FIG. 7 is an elevation view of another aspect of the resin
mask. As shown in FIG. 7, on the resin mask 20, grooves 28 are
preferably formed to extend in the lengthwise direction or the
crosswise direction of the resin mask 20 (the lengthwise direction
in the case of FIG. 7). While in the case of application of heat in
vapor deposition, there is a possibility that the resin mask 20
undergoes thermal expansion, and thereby, changes in dimension and
position of the opening 25 arise, by forming the relevant grooves
28, they can absorb the expansion of the resin mask, and can
prevent the changes in dimension and position of the opening 25
caused by the resin mask 20 expanding in a predetermined direction
as a whole due to accumulation of thermal expansions arising in
portions in the resin mask. Formation positions of the grooves 28
are not limited, but while they may be provided between the
openings 25 composing one screen and at positions of overlapping
with the openings 25, they may be preferably provided between the
individual screens. Moreover, the grooves may be provided on one
surface of the resin mask, for example, only on the surface on the
side that is in contact with the metal mask, or may be provided
only on the surface on the side that is not in contact with the
metal mask. Otherwise, they may be provided on both surfaces of the
resin mask 20.
[0067] In FIG. 7, while the grooves 28 extending in the lengthwise
direction are formed between the neighboring screens, not limited
thereto, the grooves extending in the crosswise direction may be
formed between the neighboring screens. Furthermore, the grooves
can be formed in an aspect having these combined.
[0068] While the depth and the width of the grooves 28 are not
specially limited, since the rigidity of the resin mask 20 tends to
decrease in the case where the depth of the grooves 28 is too large
and in the case where the width thereof is too large, the setting
is needed with this point taken into consideration. Moreover, the
sectional shape of the grooves is not specially limited, but only
has to be arbitrarily selected as a U-shape, a V-shape or the like
with the processing method or the like taken into consideration.
The same holds true for the vapor deposition mask of Embodiment
(B).
[0069] (Metal Mask Constituting Vapor Deposition Mask of Embodiment
(A))
[0070] The metal mask 10 constituting the vapor deposition mask of
Embodiment (A) is composed of metal and provided with a plurality
of slits 15. In the vapor deposition mask of Embodiment (A), as
described above, each slit 15 is provided at the position of
overlapping with the entirety of at least one screen. In other
words, the openings 25 composing one screen are provided at the
position of overlapping with one slit 15.
[0071] Next, with use of FIG. 8(a) to FIG. 8(c), generation of a
shadow, generation of a shadow which can arise due to the thickness
of the metal mask 10, and an advantage of the vapor deposition mask
100 of Embodiment (A) in which the slit is provided at the position
of overlapping with the entirety of at least one screen are
described. Notably, FIG. 8(a) is a partial expanded cross-sectional
view of the vapor deposition mask in which the openings 25a
composing the inside of one screen are divided by a plurality of
slits 15a. FIG. 8(b) is a partial expanded cross-sectional view
showing the state where the thickness of the metal mask is made
thicker in the vapor deposition mask shown in FIG. 8(a). FIG. 8(c)
is a partial expanded cross-sectional view exemplarily showing the
vapor deposition mask 100 of Embodiment (A) in which one slit 15 is
provided at the position of overlapping with the entirety of one
screen. FIG. 8(d) is a partial expanded cross-sectional view
showing the state where the thickness of the metal mask 10 is made
thicker in the vapor deposition mask 100 in FIG. 8(c). Moreover, in
the shown mode, an aggregate, of the openings 25, in which five (5)
openings are provided in the crosswise direction (arbitrary in the
lengthwise direction) is one screen.
[0072] As shown in FIG. 8(a), when the openings 25a composing one
screen are divided by the plurality of slits 15a, metal portions
constituting a wall surface of the slit 15a are to exist on a part
of the neighboring openings 25a. In the case where in order to form
the vapor deposition pattern with high definition, the pitch of the
openings 25a and the shape of the openings 25a are made finer, when
the metal portions exist between the openings 25a composing one
screen, the relevant metal portions prevent the vapor deposition
material released from the vapor deposition source from passing
into the inside of the openings 25a, and make the production of the
vapor deposition pattern with high definition more difficult.
Moreover, in the case where the thickness of the metal mask 10a is
made smaller, durability of the entirety of the vapor deposition
mask is to deteriorate more. In order to improve durability of the
entirety of the vapor deposition mask, in the case where the
thickness of the metal mask 10a is made smaller as shown in FIG.
8(b), the vapor deposition material released from the vapor
deposition source is more liable to collide with the inner wall
surfaces of the relevant metal portions. As the amount of the vapor
deposition material that collides with the inner wall surfaces
increases more, the amount of the vapor deposition material that
cannot reach the vapor deposition target increases more, and
generation of a shadow arises more significantly. Moreover, in the
case where the pitch between the openings 25a is made narrower, the
metal portions existing between the relevant openings 25a are
needed to be finer, and the risk of breakage of the metal portions
is higher. Notably, when the metal portions break, durability of
the entirety of the vapor deposition mask deteriorates.
[0073] Meanwhile, in the vapor deposition mask of Embodiment (A),
as shown in FIG. 8(c), the entirety of one screen, that is, all of
the openings 25 provided in one screen are provided at the position
of overlapping with one slit 15. Accordingly, as shown in FIG.
8(c), the vapor deposition material can be allowed to pass into the
openings 25 without waste, and generation of a shadow can be
prevented. Moreover, as shown in FIG. 8(d), even in the case where
the thickness of the metal mask 10 is made large to some extent,
the influence of a shadow is small, and formation of the vapor
deposition pattern with high definition is enabled. In particular,
in the vapor deposition mask of Embodiment (A), even in the case
where the thickness of the metal mask 10 is made approximately 100
.mu.m, generation of a shadow can be prevented. Since durability of
the entirety of the vapor deposition mask 100 is improved by making
the thickness of the metal mask 10 large, in the vapor deposition
mask of Embodiment (A), formation of the vapor deposition pattern
with high definition is enabled, and durability can be improved by
properly setting the thickness.
[0074] While the thickness of the metal mask 10 is not specially
limited, in order to more effectively prevent generation of a
shadow in the opening 25 positioned near the inner wall surface of
the slit 15, it is preferably 100 .mu.m or less, more preferably,
50 .mu.m or less, particularly preferably, 35 .mu.m or less. The
same holds true for the vapor deposition mask of Embodiment (B),
and the slit 15 only has to be read as a through hole.
[0075] Moreover, in the vapor deposition mask 100 of Embodiment
(A), in order to prevent generation of a shadow further more
sufficiently, the sectional shape of the slit 15 is preferably made
a shape having broadening toward the vapor deposition source, as
shown in FIG. 2 and FIG. 6. By adopting the sectional shape like
this, the vapor deposition material can be caused to reach the
vapor deposition target without the vapor deposition material that
is released from the vapor deposition source colliding with the
relevant surface of the slit 15 and the inner wall surface of the
slit 15 even when the thickness of the entire vapor deposition mask
is made large with the objective of prevention of distortion that
can occur to the vapor deposition mask 100, or improvement of
durability. Specifically, the angle formed by a straight line
connecting the lower bottom distal end in the slit 15 of the metal
mask 10 and the upper bottom distal end in the slit 15 of the same
metal mask 10 and the bottom surface of the metal mask 10 is, in
other words, the angle formed by the inner wall surface in the slit
15 and the surface of the metal mask 10 on the side that is in
contact with the resin mask 20 (a lower surface of the metal mask
in the shown mode) in the cross section in the thickness direction
of the inner wall surface composing the slit 15 of the metal mask
10 is preferably within a range of 5.degree. to 85.degree., more
preferably within a range of 15.degree. to 80.degree., further
preferably within a range of 25.degree. to 65.degree.. In
particular, in this range, an angle that is smaller than the vapor
deposition angle of the vapor deposition machine to be used is
preferable. By setting the sectional shape like this, the
deposition material can be caused to reach the vapor deposition
target without the vapor deposition material released from the
vapor deposition source colliding with the inner wall surface of
the slit 15 even when the thickness of the metal mask 10 is made
relatively large with the objective of prevention of distortion
that can arise in the vapor deposition mask 100, or enhancement of
durability. Thereby, generation of a shadow can be prevented more
effectively. Notably, while the end surfaces that face each other
of the opening 25 of the resin mask 20 may be substantially
parallel to each other, as described above, the sectional shapes of
both the slit 15 of the metal mask 10 and the opening 25 of the
resin mask 20 are preferably the shapes having broadening toward
the vapor deposition source side.
[0076] The material of the metal mask 10 is not specially limited,
but a conventionally known material in the field of the vapor
deposition mask can be properly selected and used, and, for
example, a metal material such as stainless steel, an iron-nickel
alloy, and an aluminum alloy can be cited. Above all, an invar
material that is an iron-nickel alloy can be preferably used since
an invar material is hardly deformed by heat. The same holds true
for the vapor deposition mask of Embodiment (B).
[0077] Moreover, when vapor deposition is performed on the
substrate with use of the vapor deposition mask 100 of Embodiment
(A), in the case where a magnet or the like is needed to be
disposed at a rear side of the substrate to attract the vapor
deposition mask 100 at a front side of the substrate with magnetic
force, the metal mask 10 is preferably formed of a magnetic
substance. As the metal mask 10 made of the magnetic substance,
iron-nickel alloy, pure iron, carbon steel, tungsten (W) steel,
chromium (Cr) steel, cobalt (Co) steel, KS steel which is alloy of
iron containing cobalt, tungsten, chromium and carbon, MK steel
having iron, nickel and aluminum as main components, NKS steel
having cobalt and titanium added to MK steel, Cu--Ni--Co steel,
aluminum (Al)-iron (Fe) alloy, and the like can be cited. Moreover,
when the material itself forming the metal mask 10 is not a
magnetic substance, magnetism may be added to the metal mask 10 by
dispersing powder of the above-mentioned magnetic substance in the
relevant material. The same holds true for the vapor deposition
mask of Embodiment (B).
[0078] FIG. 9 is an elevation view showing another aspect of the
vapor deposition mask 100 of Embodiment (A). As shown in FIG. 9, in
an elevation view as seen from the metal mask 10 side of the vapor
deposition mask 100, the openings 25 composing one screen may be
alternately arranged in the crosswise direction. In other words,
the openings 25 adjacent in the crosswise direction may be arranged
to be displaced in the lengthwise direction. By the arrangement in
this way, even when the resin mask 20 undergoes thermal expansion,
the openings 25 can absorb expansions arising in portions, and
large deformation can be prevented from arising due to accumulation
of the expansions.
[0079] <Vapor Deposition Mask of Embodiment (B)>
[0080] As shown in FIG. 11 and FIG. 12, in the vapor deposition
mask of Embodiment (B), the metal mask 10 in which one through hole
15 is provided and the resin mask 20 in which a plurality of
openings corresponding to a pattern to be produced by vapor
deposition are provided are stacked, and all of the relevant
plurality of openings 25 are provided at a position of overlapping
with the one through hole provided in the metal mask 10. Notably,
FIG. 11 is an elevation view of the vapor deposition mask of
Embodiment (B) as seen from of the metal mask side. FIG. 12 is a
partial expanded schematic cross-sectional view of the vapor
deposition mask shown in FIG. 11.
[0081] According to the vapor deposition mask 100 of Embodiment
(B), since the metal mask 10 is provided on the resin mask 20,
durability and handling ability of the vapor deposition mask 100
can be enhanced. Notably, in the case of the vapor deposition mask
constituted of only the resin mask without the metal mask 10
provided on the resin mask 20, durability and handling ability of
the vapor deposition mask is to deteriorate. In particular, in the
case where since the thickness of the resin mask is preferably
small in order to form the vapor deposition pattern with high
definition, the thickness of the resin mask is made small,
durability and handling performance of the vapor deposition mask
constituted of only the resin mask further deteriorate.
[0082] According to the vapor deposition mask of Embodiment (B), as
mentioned above, even when the thickness of the resin mask 20 is
made small, the presence of the metal mask 10 can give the vapor
deposition mask 100 sufficient durability and handling ability.
[0083] Moreover, in the vapor deposition mask of Embodiment (B),
the metal mask 10 having one through hole 15 is provided on the
resin mask 20 having the plurality of openings 25, and all of the
plurality of openings 25 are provided at the position of
overlapping with the relevant one through hole 15. In the vapor
deposition mask 100 of Embodiment (B) having this configuration,
since metal portions do not exist between the openings 25, the
vapor deposition pattern with high definition can be formed to
match the dimensions of the openings 25 provided in the resin mask
20 without interference of metal portions suffered.
[0084] Hereafter, with use of FIG. 17, an advantage of the vapor
deposition mask of Embodiment (B) is specifically described.
Notably, FIG. 17(a) is a partial expanded cross-sectional view of a
vapor deposition mask in which openings 25a that a resin mask 20a
has are divided by a plurality of through holes 15a, and metal
portions constituting wall surfaces of the through holes 15a exist
between the openings 25a. Moreover, FIG. 17(b) is a partial
expanded cross-sectional view of a vapor deposition mask in which
the thickness of a metal mask 10a is made thicker in FIG.
17(a).
[0085] As shown in FIGS. 17(a) and (b), in the case where the metal
portion constituting the wall surface of the through hole 15a is
caused to exist between the openings 25a, in forming the vapor
deposition pattern with use of the vapor deposition mask shown in
FIGS. 17(a) and (b), the vapor deposition material released from
the vapor deposition source collides with the relevant metal
portion, precision of the formed vapor deposition pattern decreases
due to the influence of a shadow. Notably, the shadow is a
phenomenon that a part of the vapor deposition material released
from the vapor deposition source collides with the wall surface of
the through hole of the metal mask and does not reach the vapor
deposition target, and thereby, a portion without vapor deposition
that has a film thickness smaller than the intended vapor
deposition film thickness arises in the vapor deposition pattern.
The collision of the vapor deposition material with the metal
portion can arise more significantly as the thickness of the metal
portion is larger, in other words, as the thickness of the metal
mask 10a is larger.
[0086] In order to prevent generation of a shadow, as shown in FIG.
17(a), while the measure that the thickness of the metal mask 10a
is made smaller is effective, in the case where the dimension of
the openings 25a and the pitch between the openings 25a are made
finer in order to form the vapor deposition pattern with high
definition, even when the thickness of the metal mask 10a is made
smaller to make the thickness of the metal portion existing between
the openings 25a smaller, the influence of the shadow makes the
formation of the vapor deposition pattern with high definition more
difficult. Moreover, to make the thickness of the metal mask 10a
small reduces durability of the entirety of the vapor deposition
mask. Furthermore, in the case where the pitch between the openings
25a is made small, the metal portion existing between the relevant
openings 25a is needed to be a fine wire, which increases the risk
of breakage of the metal portion.
[0087] Meanwhile, in the vapor deposition mask 100 of Embodiment
(B), as shown in FIGS. 17(c) and (d), since metal portions
constituting wall surfaces of the through hole 15 do not exist
between the openings 25, the vapor deposition pattern with high
definition can be formed without the influence of a shadow
suffered. In other words, since the metal portions constituting the
wall surfaces of the through hole 15 are positioned near the end
parts of the vapor deposition mask 100, they do not affect the
formation of the vapor deposition pattern, and the vapor deposition
pattern with high definition can be formed. Furthermore, as shown
in FIG. 17(d), since there is almost no influence of a shadow even
when the thickness of the metal mask 10 is made large, the
thickness of the metal mask 10 can be made large until durability
and handling ability can be sufficiently satisfied, which enables
the formation of the vapor deposition pattern with high definition
and can improve durability and handling ability.
[0088] (Resin Mask Constituting Vapor Deposition Mask of Embodiment
(B))
[0089] The resin mask 20 constituting the vapor deposition mask of
Embodiment (B) is composed of a resin, and as shown in FIG. 12, the
plurality of openings 25 corresponding to the pattern to be
produced by vapor deposition are provided at the position of
overlapping with one through hole 15. The openings 25 correspond to
the pattern to be produced by vapor deposition, and the vapor
deposition pattern corresponding to the openings 25 is formed on
the vapor deposition target by allowing the vapor deposition
material released from the vapor deposition source to pass through
the openings 25. In the shown mode, while the openings arranged in
a plurality rows in the lengthwise direction and the crosswise
direction are exemplarily described, they may be arranged only in
the lengthwise direction or the crosswise direction. In the vapor
deposition mask 100 of Embodiment (A), the slit 15 of the metal
mask 10 is provided at the position of overlapping with at least
one screen constituted of an aggregate of the openings provided in
the resin mask. On the contrary, in the vapor deposition mask 100
of Embodiment (B), the through hole 15 of the metal mask 10 is
positioned at the position of overlapping with all of the openings
provided in the resin mask, which is the difference from the vapor
deposition mask of Embodiment (A). For other than this difference,
the aspects described in the above-mentioned vapor deposition mask
of Embodiment (A) can be properly selected. Hereafter, the
description is made mainly for the difference.
[0090] The shape and the dimension of the openings 25 are not
specially limited, but they only have to be the shape and the
dimension corresponding to the pattern to be produced by vapor
deposition. Moreover, as shown in FIG. 11, the pitch P1 in the
lengthwise direction and the pitch P2 in the crosswise direction
between the neighboring openings 25 can be properly set depending
on the pattern to be produced by vapor deposition. For example, in
the case where the vapor deposition pattern with high definition of
400 ppi is formed, the pitch (P1) in the lengthwise direction and
the pitch (P2) in the crosswise direction between the neighboring
openings 25 out of the openings 25 composing one screen are
approximately 60 .mu.m. Moreover, the dimension of the openings is
approximately 500 .mu.m.sup.2 to 1000 .mu.m.sup.2. Moreover, one
opening 25 is not limited to correspond to one pixel, but, for
example, a plurality of pixels can be collectively one opening 25
depending on a pixel arrangement.
[0091] The vapor deposition mask 100 of Embodiment (B) may be used
for formation of the vapor deposition pattern corresponding to one
screen, or may be used for simultaneous formation of the vapor
deposition patterns corresponding to two or more screens. In this
case, as shown in FIG. 15, the openings 25 are preferably provided
at a predetermined spacing on a screen-by-screen basis. Notably, in
FIG. 15, a region closed by a broken line is "one screen". In FIG.
15, while twelve (12) openings 25 compose one screen, not limited
to this mode, for example, millions of openings 25 can compose one
screen, where one opening 25 is one pixel. As an example of the
pitch between the screens, both of the pitch in lengthwise
direction and the pitch in the crosswise direction are
approximately 1 mm to 100 mm. Notably, the pitch between the
screens means the pitch between the neighboring openings in one
screen and another screen adjacent to the relevant one screen.
[0092] FIG. 18 is an elevation view showing another aspect of the
vapor deposition mask 100 of Embodiment (B). As shown in FIG. 18,
in an elevation view of the vapor deposition mask 100 as seen from
the metal mask 10 side, the openings 25 may be alternately arranged
in the crosswise direction. In other words, the openings 25
adjacent in the crosswise direction may be arranged to be displaced
in the lengthwise direction. By the arrangement in this way, even
when the resin mask 20 undergoes thermal expansion, the openings 25
can absorb expansions arising in portions, and large deformation
can be prevented from arising due to accumulation of the
expansions.
[0093] (Metal Mask Constituting Vapor Deposition Mask of Embodiment
(B))
[0094] The metal mask 10 constituting the vapor deposition mask of
Embodiment (B) is composed of metal and has one through hole 15.
Further, in the vapor deposition mask of Embodiment (B), the
relevant one through hole 15 is disposed at the position of
overlapping with all of the openings 25, in other words, at the
position where all of the openings 25 arranged in the resin mask 20
can be seen, as seen head-on of the metal mask 10.
[0095] The metal portion composing the metal mask 10, that is, the
portion thereof other than the through hole 15 may be provided
along the outer edge of the vapor deposition mask 100 as shown in
FIG. 11, or the dimension of the metal mask 10 may be made smaller
than that of the resin mask 20 to expose an outer circumferential
portion of the resin mask 20 as shown in FIG. 13. Notably, FIG. 14
is a partial expanded schematic cross-sectional view of the vapor
deposition mask shown in FIG. 13. Moreover, the dimension of the
metal mask 10 may be made larger than that of the resin mask 20, so
that a part of the metal portion is caused to protrude outward in
the crosswise direction of the resin mask or outward in the
lengthwise direction thereof. Notably, in any case, the dimension
of the through hole 15 is configured to be smaller than the
dimension of the resin mask 20.
[0096] While a width (W1) in the crosswise direction and a width
(W2) in the lengthwise direction of the metal portion constituting
the wall surface of the through hole of the metal mask 10 shown in
FIG. 11 are not specially limited, as the width W1, W2 is made
smaller, durability and handling ability tend to deteriorate more.
Accordingly, W1 and W2 are preferably widths by which durability
and handling ability are sufficiently satisfied. While appropriate
widths can be properly set depending on the thickness of the metal
mask 10, as an example of preferable widths, both W1 and W2 are
approximately 1 mm to 100 mm.
[0097] Moreover, in order to sufficiently prevent generation of a
shadow in the opening 25 positioned near the inner wall surface of
the through hole 15, the sectional shape of the through hole 15 is
preferably a shape having broadening toward the vapor deposition
source. By setting the sectional shape like this, even in the
opening 25 positioned near the inner wall surface of the through
hole 15, the vapor deposition material released from the vapor
deposition source can be caused to pass through without waste.
Specifically, the angle formed by the straight line connecting the
lower bottom distal end in the through hole 15 of the metal mask 10
and the upper bottom distal end in the through hole 15 of the same
metal mask 10 and the bottom surface of the metal mask 10 is
preferably within a range of 25.degree. to 65.degree.. In
particular, in this range, an angle that is smaller than the vapor
deposition angle of the vapor deposition machine to be used is
preferable.
[0098] As above, while the vapor deposition mask 100 of Embodiment
(B) of the present invention is described mainly for the example
where only one through hole 15 is provided in the metal mask 10, a
plurality of through holes 15 may be provided in the metal mask 10.
Notably, in this case, the essential condition is that one through
hole 15 of the plurality of through holes 15 is provided at the
position of overlapping with all of the openings 25 provided in the
resin mask 20.
[0099] (Method for Producing Vapor Deposition Mask of Embodiment
(A))
[0100] Next, a method for producing the vapor deposition mask of
Embodiment (A) of the present invention is described. The method
for producing the vapor deposition mask 100 of Embodiment (A) has a
step of preparing a resin plate-equipped metal mask in which the
metal mask 10 in which the plurality of slits 15 are provided and a
resin plate 30 are stacked as shown in FIG. 10(a), and a resin mask
forming step of forming the openings 25 required for composing the
plurality of screens in the resin plate 30 by irradiation with
laser from the metal mask side as shown in FIG. 10(b), wherein as
the metal mask 10 composing the resin plate-equipped metal mask, a
metal mask in which the slit 15 overlapping with the entirety of at
least one screen out of the plurality of screens is provided is
used. Hereafter, the method for producing the vapor deposition mask
of Embodiment (A) is specifically described.
[0101] (Step of Preparing Resin Plate-Equipped Metal Mask)
[0102] When a resin plate-equipped metal mask in which the metal
mask 10 in which the slits are provided and the resin plate 30
shown in FIG. 10(a) are stacked is prepared, first, the metal mask
in which a plurality of slits 15 are provided is prepared. In the
method for producing the vapor deposition mask of Embodiment (A),
as the metal mask 10 prepared here, the metal mask 10 in which the
slit 15 overlapping with the entirety of the openings 25 provided
in the entirety of at least one screen described for the
above-mentioned vapor deposition mask 100 of Embodiment (A) is
provided is used.
[0103] A pasting method and a forming method of the metal mask and
the resin plate to form the resin plate-equipped metal mask are not
specially limited, for example, a stacked body beforehand formed by
coating with a resin layer with respect to a metal plate which is
to be the metal mask is prepared, the slits 15 are formed in the
metal plate in the state of the stacked body, and thereby, the
resin plate-equipped metal mask can also be obtained. In the method
for producing the vapor deposition mask of Embodiment (A), the
resin plate composing the resin plate-equipped metal mask also
includes the resin layer formed by coating as above. In other
words, the resin plate may be beforehand prepared, or may be formed
by a conventionally known coating method or the like. Moreover, the
metal mask 10 and the resin plate may be pasted together with use
of various adhesive agents, or the resin plate having self-adhesion
may be used. Notably, the dimensions of the metal mask 10 and the
resin plate 30 may be the same as each other. With fixing to a
frame which is arbitrarily performed after this taken into
consideration, the dimension of the resin plate 30 is preferably
made smaller than that of the metal plate 10 to set the state where
the outer circumferential portion of the metal mask 10 is exposed,
which facilitates welding of the metal mask 10 and the frame. The
same holds true for the method for producing the vapor deposition
mask of Embodiment (B), and the slits only have to be read as one
through hole.
[0104] As the forming method of the metal mask 10 in which the
slits 15 are provided, a masking member, for example, a resist
material is applied onto the surface of the metal plate,
predetermined portions are exposed and developed, and thereby, a
resist pattern in which positions where the slits 15 are finally
formed remain is formed. The resist material used as the masking
member is preferably excellent in processing ability with desired
resolution. Next, etching processing is performed by the etching
method with use of the resist pattern as an etching resistant mask.
After the completion of the etching, the resist pattern is cleaned
and removed. By doing so, the metal mask 10 in which the plurality
of slits 15 are provided is obtained. The etching for forming the
slits 15 may be performed on one surface side of the metal plate,
or may be performed on both surface sides thereof. Moreover, in the
case where the slits 15 are formed in the metal plate with use of
the stacked body in which the resin plate is provided on the metal
plate, after the masking member is applied onto the surface of the
metal plate on the side that is not in contact with the resin
plate, the resist pattern is formed, and next, the slits 15 are
formed by the etching from one surface side. Notably, in the case
where the resin plate has etching resistance with respect to the
etching agent of the metal plate, masking of the surface of the
resin plate is not needed, but in the case where the resin plate
does not have resistance with respect to the etching agent of the
metal plate, the masking member is needed to be applied onto the
surface of the resin plate. Moreover, in the above, while the
resist material is mainly described as the masking member, in place
of the application of the resist material, a dry film resist may be
laminated to perform the similar patterning. The same holds true
for the method for producing the vapor deposition mask of
Embodiment (B), and the slits only have to be read as one through
hole.
[0105] (Step of Fixing Resin Plate-Equipped Metal Mask to
Frame)
[0106] While the relevant step is an arbitrary step in the method
for producing the vapor deposition mask of Embodiment (A), since
the completed vapor deposition mask is not fixed to the frame but
the openings are provided later with respect to the resin
plate-equipped metal mask in the state of being fixed to the frame,
positional precision can be especially improved. Notably, in the
case where the completed vapor deposition mask 100 is fixed to the
frame, since the fixing is performed with the metal mask in which
the openings are determined pulled with respect to the frame,
precision in opening position coordinate is to decrease as compared
with the case of having the present step.
[0107] A method of fixing the resin plate-equipped metal mask to
the frame is not specially limited, but, for example, a
conventionally known step method such as spot welding only has to
be properly adopted.
[0108] (Step of Forming Openings Corresponding to Pattern to be
Produced by Vapor Deposition in Resin Plate of Resin Plate-Equipped
Metal Mask by Irradiation with Laser from Metal Mask Side)
[0109] Next, as shown in FIG. 10(b), the openings 25 corresponding
to the pattern to be produced by vapor deposition are formed in the
resin plate 30 by irradiation with laser from the metal mask 10
side of the resin plate-equipped metal mask through the slit 15, to
form the resin mask 20. The laser apparatus used here is not
specially limited, but a conventionally known laser apparatus only
has to be used. By doing so, the vapor deposition mask 100 of
Embodiment (A) as shown in FIG. 10(c) is obtained.
[0110] Notably, in the production method of Embodiment (A), since
the metal mask 10 in which the slit 15 is beforehand provided at
the position of overlapping with the entirety of one screen or the
entirety of two or more screens is used, in the present step, the
openings 25 required for composing one screen or the openings 25
required for composing two or more screens are formed in one slit
15. In other words, one slit 15 is provided so as to overlap with
the openings composing the entirety of one screen or the openings
25 composing the entirety of two or more screens.
[0111] Moreover, when the openings 25 are provided in the resin
plate of the resin plate-equipped metal mask fixed to the frame, a
reference sheet (not-shown) in which the pattern to be produced by
vapor deposition, that is, the pattern corresponding to the
openings 25 to be formed are beforehand provided may be prepared,
and laser irradiation corresponding to the pattern of the reference
sheet may be performed from the metal mask 10 side in the state
where the reference sheet is pasted on the surface of the resin
plate on the side that the metal mask 10 is not provided on.
According to this method, the openings 25 can be formed by the
laser irradiation performed, watching the pattern of the reference
sheet pasted on the resin plate-equipped metal mask, in the state
of so-called face-to-face. Thereby, the openings 25 with high
definition in which dimensional precision of the openings is
extremely high can be formed. Moreover, since in this method, the
openings 25 are formed in the state of being fixed to the frame,
the vapor deposition mask is enabled to be excellent not only in
dimensional precision but also in positional precision.
[0112] Notably, in the case of using the above-mentioned method,
the pattern of the reference sheet is needed to be able to be
recognized by the laser irradiation apparatus or the like from the
metal mask 10 side via the resin plate 30. While the resin plate
needs to have transparency in the case of having a thickness to
some extent, in the case of the thickness preferable with the
influence of a shadow taken into consideration, for example, in the
case of the thickness of approximately 3 .mu.m to 25 .mu.m as
described above, even a colored resin plate can be caused to
recognize the pattern of the reference sheet. The similar method
can also be used for the method for producing the vapor deposition
mask of Embodiment (B).
[0113] A method for pasting the resin plate-equipped metal mask and
the reference sheet together is not specially limited, but, for
example, in the case where the metal mask 10 is a magnetic body, a
magnet or the like is disposed at a rear side of the reference
sheet, and the resin plate 30 of the resin plate-equipped metal
mask and the reference sheet are pasted together by being
attracted. Besides this, the pasting can be performed with use of
the electrostatic adsorbing method or the like. As the reference
sheet, for example, a TFT substrate having a predetermined opening
pattern, a photo mask and the like can be cited. The similar method
can also be used for the method for producing the vapor deposition
mask of Embodiment (B).
[0114] Moreover, a slimming step may be performed between the steps
described above, or after the steps. For example, in the case where
the resin plate 30 finally to be the resin mask 20 or the metal
mask 10 having a thickness larger than that described above is
used, excellent durability and transportability can be given in the
case where the metal mask 10 or the resin plate 30 are solely
transported during the production steps or the similar case.
Meanwhile, in order to prevent generation of a shadow or the like,
the thickness of the vapor deposition mask 100 obtained by the
production method of Embodiment (A) is preferably the optimum
thickness. The slimming step is a useful step in the case of
optimizing the thickness of the vapor deposition mask 100 while
satisfying durability and transportability during the production
steps or after the steps.
[0115] The slimming of the metal mask 10 can be realized by etching
the surface of the metal mask 10 on the side that is not in contact
with the resin plate 30 or the surface of the metal mask 10 on the
side that is not in contact with the resin plate 30 or the resin
mask 20 with use of the etching agent capable of etching the metal
mask 10 between the steps described above, or after the steps.
[0116] The slimming of the resin plate 30 to be the resin mask 20
and the resin mask 20, that is, optimization of the thickness of
the resin plate 30 and the resin mask 20 is similar to the above,
and can be realized by etching the surface of the resin plate 30 on
the side that is not in contact with the metal mask 10 or the
surface of the resin mask 20 on the side that is not in contact
with the metal mask 10 with use of the etching agent capable of
etching the materials of the resin plate 30 and the resin mask 20
between any of the steps described above, or after the steps.
Moreover, after the vapor deposition mask 100 is formed, both the
metal mask 10 and the resin mask 30 undergo the etching processing,
and thereby, the thicknesses of both of them can also be optimized.
The above-mentioned slimming step can also be applied to the method
for producing the vapor deposition mask of Embodiment (B) as it
is.
[0117] (Method for Producing Vapor Deposition Mask of Embodiment
(B))
[0118] Next, a method for producing the vapor deposition mask of
Embodiment (B) of the present invention is described. As shown in
FIG. 19, the method for producing the vapor deposition mask 100 of
Embodiment (B) includes a step of preparing a resin plate-equipped
metal mask in which the metal mask 10 in which one through hole is
provided and the resin plate 30 are stacked (refer to FIG. 19(a)),
and a resin mask forming step of forming the plurality of openings
25 at the position of overlapping with one through hole 15 in the
resin plate 30 by irradiation with laser from the metal mask 10
side (refer to FIG. 19(b)). Hereafter, the method for producing the
vapor deposition mask of Embodiment (B) is specifically
described.
[0119] (Step of Preparing Resin Plate-Equipped Metal Mask)
[0120] The present step is a step of preparing the resin
plate-equipped metal mask in which the metal mask 10 and the resin
plate 30 are stacked by pasting the metal mask 10 in which one
through hole 15 is provided and the resin plate 30 together.
[0121] (Step of Fixing Resin Plate-Equipped Metal Mask to
Frame)
[0122] The relevant step is an arbitrary step in the method for
producing the vapor deposition mask of Embodiment (B), the method
described for the above-mentioned method for producing the vapor
deposition mask of Embodiment (A) can be used as it is, and the
detailed description here is omitted.
[0123] (Step of Forming Plurality of Openings Overlapping with One
Through Hole in Resin Plate-Equipped Metal Mask by Irradiation with
Laser from Metal Mask Side)
[0124] Next, as shown in FIG. 19(b), the openings 25 corresponding
to the pattern to be produced by vapor deposition are formed in the
resin plate 30 by irradiation with laser from the metal mask 10
side through one through hole 15, to form the resin mask 20. In
this step, since the irradiation with laser is performed through
one through hole 15, the plurality of openings 25 are to be finally
formed at the position of overlapping with one through hole 15. The
laser apparatus used here is not specially limited, but a
conventionally known laser apparatus only has to be used. By doing
so, the vapor deposition mask 100 of Embodiment (B) as shown in
FIG. 19(c) is obtained.
[0125] (Vapor Deposition Mask Preparation Body)
[0126] Next, a vapor deposition mask preparation body of an
embodiment of the present invention is described. The vapor
deposition mask preparation body of an embodiment of the present
invention is a vapor deposition mask preparation body for obtaining
a vapor deposition mask including: a metal mask in which a
plurality of slits are provided; and a resin mask, the metal mask
and the resin mask being stacked, openings required for composing a
plurality of screens provided in the resin mask, the openings
corresponding to a pattern to be produced by vapor deposition, each
of the slits provided at a position of overlapping with an entirety
of at least one screen. The metal mask in which the slits are
provided is stacked on one surface of a resin plate, and each of
the slits is provided at a position of overlapping with an entirety
of the openings which compose one screen and are finally provided
in the resin plate.
[0127] The vapor deposition mask preparation body of an embodiment
of the present invention is common to the above-described vapor
deposition mask 100 of Embodiment (A) except in that the openings
25 are not provided in the resin plate, and its specific
description is omitted. As a specific configuration of the vapor
deposition mask preparation body of an embodiment, the resin
plate-equipped metal mask prepared in the preparing step in the
above-mentioned method for producing the vapor deposition mask of
Embodiment (A) (refer to FIG. 10(a)) can be cited.
[0128] According to the above-mentioned vapor deposition mask
preparation body of an embodiment, by forming the openings in the
resin plate of the relevant vapor deposition mask preparation body,
the vapor deposition mask capable of satisfying both high
definition and lightweight in upsizing and forming a vapor
deposition pattern with high definition can be obtained.
[0129] A vapor deposition mask preparation body of another
embodiment is a vapor deposition mask preparation body for
obtaining a vapor deposition mask including: a metal mask in which
one through hole is provided; and a resin mask in which a plurality
of openings corresponding to a pattern to be produced by vapor
deposition are provided, the metal mask and the resin mask being
stacked, all of the plurality of openings provided at a position of
overlapping with the one through hole. The metal mask in which the
one through hole is provided is stacked on one surface of the resin
plate. The one through hole is provided at a position of
overlapping with all of the openings which are finally provided in
the resin plate.
[0130] The vapor deposition mask preparation body of another
embodiment is common to the above-described vapor deposition mask
100 of Embodiment (B) except in that the openings 25 are not
provided in the resin plate, and its specific description is
omitted. As a specific configuration of the vapor deposition mask
preparation body of another embodiment, the resin plate-equipped
metal mask prepared in the preparing step in the above-mentioned
method for producing the vapor deposition mask of Embodiment (B)
(refer to FIG. 19(a)) can be cited.
[0131] According to the above-mentioned vapor deposition mask
preparation body of another embodiment, by forming the openings in
the resin plate of the relevant vapor deposition mask preparation
body, the vapor deposition mask capable of satisfying both high
definition and lightweight in upsizing and forming a vapor
deposition pattern with high definition can be obtained.
[0132] (Method for Producing Organic Semiconductor Element)
[0133] Next, a method for producing an organic semiconductor
element of an embodiment of the present invention is described. The
method for producing an organic semiconductor element of an
embodiment of the present invention has a step of forming a vapor
deposition pattern in a vapor deposition method with use of a
frame-equipped vapor deposition mask, and is the frame-equipped
vapor deposition mask below is used in the relevant step of forming
an organic semiconductor element.
[0134] The method for producing an organic semiconductor element of
an embodiment having the step of forming the vapor deposition
pattern in the vapor deposition method with use of the
frame-equipped vapor deposition mask has an electrode forming step
of forming an electrode on a substrate, an organic layer forming
step, a counter electrode forming step, a sealing layer forming
step, and the like, and in each of the arbitrary steps, the vapor
deposition pattern is formed on the substrate in the vapor
deposition method with use of the frame-equipped vapor deposition
mask. For example, in the case where the vapor deposition method
using the frame-equipped vapor deposition mask is applied to each
of light-emitting layer forming steps for colors of R, G and B of
an organic EL device, the vapor deposition patterns of
light-emitting layers for the respective colors are formed on the
substrate. Notably, the method for producing an organic
semiconductor element of an embodiment of the present invention is
not limited to these steps, but can be applied to an arbitrary step
in producing a conventionally known organic semiconductor element
with use of a vapor deposition method.
[0135] In the method for producing an organic semiconductor element
of an embodiment of the present invention, in the above-mentioned
step of forming the vapor deposition pattern, the vapor deposition
mask fixed to the frame is the vapor deposition mask of Embodiment
(A) or the vapor deposition mask of Embodiment (B) described
above.
[0136] For the vapor deposition mask composing the frame-equipped
vapor deposition mask, the vapor deposition mask 100 of Embodiment
(A) or Embodiment (B) described above can be used as it is, and its
detailed description is omitted. According to the method for
producing an organic semiconductor element with use of the
frame-equipped vapor deposition mask including the vapor deposition
mask of Embodiment (A) or the vapor deposition mask of Embodiment
(B) of the present invention described above, an organic
semiconductor element having a pattern with high definition can be
formed. As the organic semiconductor element produced in the method
for producing an organic semiconductor element of an embodiment of
the present invention, for example, organic layers, light-emitting
layers, cathode electrodes and the like of an organic EL element
can be cited. In particular, the method for producing an organic
semiconductor element of an embodiment of the present invention can
be preferably used for producing light-emitting layers of R, G and
B of an organic EL element for which high definition pattern
precision is required.
[0137] The frame-equipped vapor deposition mask used for producing
the organic semiconductor element only has to satisfy the condition
that the vapor deposition mask of Embodiment (A) or Embodiment (B)
described above is fixed to the frame, and is not specially limited
in other conditions. The frame is not specially limited, but may be
a member that can support the vapor deposition mask, and, for
example, a metal frame, a ceramic frame or the like can be used.
Above all, the metal frame is preferable since it is easily welded
to the metal mask of the vapor deposition mask, and influence such
as deformation is small. Hereafter, an example in which a metal
frame is used as the frame is mainly described. For example, as
shown in FIG. 20, a metal frame-equipped vapor deposition mask 200
in which one vapor deposition mask 100 is fixed to a metal frame 60
may be used, or as shown in FIG. 21, a metal frame-equipped vapor
deposition mask 200 in which a plurality of vapor deposition masks
(four vapor deposition masks in the shown mode) are fixed to a
metal frame 60 to line up in the lengthwise direction or the
crosswise direction (fixed to line up in the crosswise direction in
the shown mode) may be used. Notably, each of FIG. 20 and FIG. 21
is an elevation view of the metal frame-equipped vapor deposition
mask 200 of an embodiment as seen from the resin mask 20 side.
[0138] The metal frame 60 is a frame member in a substantially
rectangular shape, and has an opening for exposing the openings 25
provided in the resin mask 20 of the vapor deposition mask 100
which is finally fixed, to the vapor deposition source side. The
material of the metal frame is not specially limited, but a metal
material large in rigidity such, for example, as SUS and an invar
material is preferable.
[0139] The thickness of the metal frame is not specially limited,
but is preferably approximately 10 mm to 30 mm in view of rigidity
and the like. The width between the inner circumferential end face
of the opening of the metal frame and the outer circumferential end
face of the metal frame is not specially limited as long as it is a
width with which the relevant metal frame can be fixed to the metal
mask of the vapor deposition mask, but, for example, can be
exemplarily a width of approximately 10 mm to 50 mm.
[0140] Moreover, a reinforcement frame 65 or the like may exist in
the opening of the metal frame within a range where the exposure of
the openings 25 of the resin mask 20 composing the vapor deposition
mask 100 is not prevented. In other words, the opening included in
the metal frame 60 may have a configuration in which it is divided
by a reinforcement frame or the like. In the mode shown in FIG. 20,
while a plurality of reinforcement frames 65 extending in the
crosswise direction are arranged in the lengthwise direction, in
place of these reinforcement frames 65 or along with these, a
plurality of rows of reinforcement frames extending in the
lengthwise direction may be arranged in the crosswise direction.
Moreover, in the mode shown in FIG. 21, while a plurality of
reinforcement frames 65 extending in the lengthwise direction are
arranged in the crosswise direction, in place of these
reinforcement frames 65 or along with these, a plurality of
reinforcement frames extending in the crosswise direction may be
arranged in the lengthwise direction. By using the metal frame 60
in which the reinforcement frames 65 are arranged, when the
plurality of vapor deposition masks 100 of Embodiment (A) or
Embodiment (B) described above are fixed to the metal frame 60 to
line up in the lengthwise direction and the crosswise direction,
the vapor deposition masks can be fixed to the metal frame 60 even
when the vapor deposition masks are placed at positions of
overlapping with the reinforcement frames.
[0141] A method of fixing the metal frame 60 to the vapor
deposition mask 100 of Embodiment (A) or Embodiment (B) described
above is not specially limited, but the fixing can be performed by
using spot welding of fixing with laser light or the like, an
adhesive, screw fixing or the like.
REFERENCE SIGNS LIST
[0142] 100 Vapor deposition mask [0143] 10 Metal mask [0144] 15
Slit, through hole [0145] 20 Resin mask [0146] 25 Opening [0147] 28
Groove [0148] 60 Metal frame [0149] 200 Frame-equipped vapor
deposition mask
* * * * *