U.S. patent application number 15/043425 was filed with the patent office on 2016-06-09 for electroless plating apparatus.
The applicant listed for this patent is EBARA CORPORATION. Invention is credited to Kenichiro ARAI, Hiroyuki KANDA, Makoto KUBOTA, Junko MINE, Tsutomu NAKADA, Junichiro TSUJINO.
Application Number | 20160160352 15/043425 |
Document ID | / |
Family ID | 48281048 |
Filed Date | 2016-06-09 |
United States Patent
Application |
20160160352 |
Kind Code |
A1 |
KANDA; Hiroyuki ; et
al. |
June 9, 2016 |
ELECTROLESS PLATING APPARATUS
Abstract
There is provided an electroless plating apparatus which,
despite using a high-productivity batch processing method, can
reduce the amount of a liquid chemical brought out of a processing
tank, thereby reducing the cleaning time in a cleaning step, and
can perform flushing easily and quickly. The electroless plating
apparatus includes a pre-plating treatment module including a
pre-plating treatment tank, a plating module, and an inter-module
substrate transport device. The pre-plating treatment tank is
provided with a pre-plating treatment solution circulation line
having a temperature control function for a pre-plating treatment
solution. The plating tank is provided with a plating solution
circulation line having a filter and a temperature control function
for a plating solution. The plating solution circulation line is
connected to a flushing line for flushing the interior of the
plating solution circulation line and the interior of the plating
tank.
Inventors: |
KANDA; Hiroyuki; (Tokyo,
JP) ; TSUJINO; Junichiro; (Tokyo, JP) ; MINE;
Junko; (Tokyo, JP) ; KUBOTA; Makoto; (Tokyo,
JP) ; NAKADA; Tsutomu; (Tokyo, JP) ; ARAI;
Kenichiro; (Kyoto, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
EBARA CORPORATION |
Tokyo |
|
JP |
|
|
Family ID: |
48281048 |
Appl. No.: |
15/043425 |
Filed: |
February 12, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13677388 |
Nov 15, 2012 |
9293364 |
|
|
15043425 |
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Current U.S.
Class: |
118/423 |
Current CPC
Class: |
H01L 2224/05624
20130101; H01L 2924/00014 20130101; C23C 18/1683 20130101; C23C
18/1651 20130101; H01L 2924/00014 20130101; H01L 24/13 20130101;
H01L 2224/05567 20130101; H01L 2224/11464 20130101; C23C 18/1675
20130101; C23C 18/32 20130101; H01L 2224/11464 20130101; C23C
18/1628 20130101; H01L 24/742 20130101; H01L 2224/742 20130101;
C23C 18/54 20130101; H01L 21/76838 20130101; C23C 18/1682 20130101;
C23C 18/1632 20130101; C23C 18/1669 20130101; H01L 2224/05624
20130101; H01L 2924/00014 20130101; H01L 2224/05552 20130101; H01L
2924/00012 20130101; C23C 18/168 20130101; C23C 18/1642 20130101;
H01L 24/11 20130101; C23C 18/163 20130101; H01L 2224/0401
20130101 |
International
Class: |
C23C 18/16 20060101
C23C018/16 |
Foreign Application Data
Date |
Code |
Application Number |
Nov 16, 2011 |
JP |
2011-250433 |
Nov 16, 2011 |
JP |
2011-250434 |
Nov 16, 2011 |
JP |
2011-250435 |
Claims
1. An electroless plating apparatus comprising: a plating tank for
holding therein a plating solution while creating an upward flow of
the plating solution; a substrate holder for holding a plurality of
substrates in a vertical position and parallel to each other, and
immersing the substrates in the plating solution in the plating
tank; and a plurality of guide plates each for surrounding the
periphery of each of the substrates, held by the substrate holder
and immersed in the plating solution, and creating a flow of the
plating solution around the periphery of the substrate, said flow
being continuous with a flow of the plating solution flowing along
a surface of the substrate.
2. The electroless plating apparatus according to claim 1, wherein
the distance between each of the substrates held by the substrate
holder and the guide plate, surrounding the periphery of the
substrate, is 1 to 10 mm.
3. The electroless plating apparatus according to claim 1, wherein
the guide plates are connected by a plurality of connecting plates,
each connecting adjacent two guide plates and extending linearly
and vertically, to form a grid-like structure.
4. The electroless plating apparatus according to claim 1, wherein
the guide plates consist of lower guide plates for surrounding the
peripheries of the lower halves of the substrates held by the
substrate holder and immersed in the plating solution, and upper
guide plates for surrounding the peripheries of the upper halves of
the substrates, the lower guide plates being mounted to the
substrate holder and the upper guide plates being mounted to the
back surface of a lid for opening/closing the top opening of the
plating tank.
5. The electroless plating apparatus according to claim 1, wherein
the guide plates consist of lower guide plates for surrounding the
peripheries of the lower halves of the substrates held by the
substrate holder and immersed in the plating solution, and upper
guide plates for surrounding the peripheries of the upper halves of
the substrates, the lower guide plates being mounted to an interior
surface of the plating tank and the upper guide plates being
mounted to the back surface of a lid for opening/closing the top
opening of the plating tank.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This document is a Divisional application of U.S. patent
application Ser. No. 13/677,388 filed Nov. 15, 2012, which claims
priorities to Japanese Application No. 2011-250433 filed Nov. 16,
2011, Japanese Application No. 2011-250434 filed Nov. 16, 2011 and
Japanese Application No. 2011-250435 filed Nov. 16, 2011, the
entire contents of which are hereby incorporated by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to an electroless plating
method and an electroless plating apparatus, and more particularly
to an electroless plating method and an electroless plating
apparatus which, despite using a high-productivity batch processing
method, make it possible to stably perform uniform processing of a
surface of a substrate, such as a semiconductor wafer.
[0004] 2. Description of the Related Art
[0005] As a three-dimensional packaging technique for electrical
connection between semiconductor chips, a method has been proposed
in which, as shown in FIG. 1, a microbump 12, provided at a
predetermined position on a CPU 10, and a microbump 16, provided at
a predetermined position on a memory 14, are used as electrodes,
and the microbumps (electrodes) 12, 16 are bonded together.
[0006] The microbump 16 provided on the memory 14 is made of, for
example, a Cu--Sn alloy. The microbump 12 on the CPU 10 can be
formed by forming, e.g., an Ni plated film 20 having a thickness of
2 to 10 .mu.m on a surface of a bump pad 18, e.g., made of Al or
Cu, and forming, e.g., an Au plated film 22 having a thickness of
50 to 200 nm on a surface of the Ni plated film 20. Upon the
bonding of the microbumps 12 and 16, the Au plated film 22 diffuses
into the microbump 16, e.g., made of a Cu--Sn alloy. The Au plated
film 22 thus does not contribute to the bonding, but serves to
prevent oxidation of the surface of the Ni plated film 20, thereby
ensuring the bonding strength.
[0007] The microbump 16 provided on the memory 14 is not directly
connected to the bump pad 18, e.g., made of Cu, because of damage
to, e.g., a low-k material underlying the bump pad 18. Thus, the Ni
plated film 20 and the Au plated film 22 are employed as a
buffer.
[0008] In TSV (through silicon via) interconnection bonding, a
method has been proposed which involves bonding a front-surface
bump 36, consisting of an Ni plated film 32 formed on the front
side of a TSV 30 and an Au plated film 34 formed on the Ni plated
film 32, and a back-surface bump 38 formed on the back side of a
TSV 30 of another substrate each other, as shown in FIG. 2.
[0009] The use of electroless plating, in place of electroplating,
is being studied for the formation of the above-described Ni plated
films 20, 32 and Au plated films 22, 34. The use of electroless
plating, in place of electroplating, is being studied also for the
formation of plated films of materials other than Ni and Au, such
as Co, Pd, Pt, Cu, Sn, Ag, Rh, Ru etc., or a composite material
thereof.
[0010] Al and Cu are commonly used as the metal (bump pad 18)
underlying the microbump 12, shown in FIG. 1. Al and Cu are not
catalytic metals such as Fe, Co, Ni, Pd, Pt, etc. Therefore, when
the underlying metal is Al or Cu, a zincate treatment for the Al
surface or a Pd catalyst application treatment (or initial
application of electric current) for the Cu surface is generally
carried out as a pre-plating treatment. In the zincate treatment of
the Al surface, zinc is generally applied to the Al surface by
displacement plating. Zinc itself acts as a catalyst poison and
inhibits a catalytic action. It is therefore necessary to control
the amount of zinc plated (displaced) at an appropriate level in
the zincate treatment. In the subsequent electroless plating, the
zinc is replaced with a catalytic metal with which electroless
plating is possible.
[0011] As described above, a pre-plating treatment (activation
treatment) of an Al surface or a Cu surface is effected by
displacement plating with, e.g., a catalytic metal or zinc. For
example, a Pd catalyst application treatment can be carried out,
e.g., by immersing a substrate in a sulfuric acid-based solution
containing palladium sulfate. A zincate treatment can be carried
out by immersing a substrate in a sodium hydroxide-based solution
containing zinc oxide. Prior to a pre-plating (activation)
treatment of a substrate surface, the substrate surface is
generally cleaned, e.g., with nitric acid or citric acid to remove
an oxide film or contaminants from the substrate surface, and then
cleaned with water. The pre-plating treatment is carried out
subsequent to the water cleaning and without predrying of the
substrate surface. Electroless plating of the substrate surface is
carried out subsequent to the cleaning with water of the substrate
surface after the pre-plating treatment and without predrying of
the substrate surface. Thus, the sequence of electroless plating
processing steps is carried out successively without drying of the
substrate surface. This is because if the substrate surface is
dried after the pre-cleaning or the pre-plating treatment, then an
oxide film will be formed on the substrate surface, leading to poor
plating.
[0012] Pre-plating treatments can cause various problems such as:
damage to an underlying material, poor adhesion between a
displacement plated film and an underlying metal, roughening of a
plated film, etc. in the case of a patterned wafer; and poor
uniformity of the surface morphology, leading to poor appearance,
etc. in the case of an unpatterned wafer.
[0013] In a pre-plating treatment (activation treatment) for
electroless plating, it is important to perform displacement
plating with Zn or Pd densely and uniformly. The amount of
displacement plating and the amount of surface etching are greatly
influenced by the concentration of an etching agent contained in a
treatment solution, for example, the concentration of NaOH in a
pre-plating treatment (zincate treatment) of an Al surface with a
sodium hydroxide-based solution containing zinc oxide, or the
concentration of sulfuric acid in a pre-plating treatment (Pd
catalyst application treatment) of a Cu surface with a sulfuric
acid-based solution containing palladium sulfate. In some cases,
the amount of displacement plating and the amount of surface
etching are determined in a few seconds.
[0014] Electroless plating apparatuses can be classified roughly
into electroless processing apparatuses using a single-substrate
processing method in which substrates are processed in a one-by-one
manner, and electroless plating apparatuses using a batch
processing method in which a plurality of substrates are
simultaneously held and processed. The plating rate in electroless
plating is generally 1 to 20 .mu.m/s, which is significantly lower
than that of electroplating. Therefore, when employing electroless
plating for processing that requires a lot of time, such as the
formation of bumps, the use of a batch processing method rather
than a single-substrate processing method is generally
preferred.
[0015] Electroless plating apparatuses of the batch processing type
have the advantage that with the same footprint, the throughput is
much higher as compared to the single-substrate processing type. On
the other hand, in an electroless plating apparatuses of the batch
processing type, a plurality of substrates, arranged parallel to
each other and each held in a vertical position, are simultaneously
immersed and processed in a processing liquid, such as a
pre-plating treatment solution or a plating solution. Therefore, a
metal in a plating solution, for example, is consumed generally in
a large amount during one batch processing. Further, a large amount
of a processing liquid, such as a liquid chemical or pure water,
will adhere to substrates and will be brought out of the processing
tank. In addition, it is necessary to frequently perform flushing
of, e.g., a plating solution circulation line to remove extraneous
matter from the interior of the line, e.g., with an etching liquid.
Furthermore, compared to the single-substrate processing type, an
electroless plating apparatuses of the batch processing type is
generally inferior in the processing performance (the uniformity of
the thickness and the quality of a plated film) that is dependent
on the time it takes to fully immerse a substrate, from the upper
end to the lower end, in a processing liquid, the direction of the
flow of a processing liquid, the uniformity of the temperature
distribution in a processing liquid, etc.
[0016] In electroless plating using a batch processing method, it
is common practice to replenish a plating solution with a metal by
the following replenishing methods: estimated metal replenishment
based on the consumption of the metal, calculated from the plating
area and the plating time; and metal replenishment based on the
results of periodic analysis of the plating solution. For example,
estimated replenishment of metal ions may be performed per batch
and, in addition, replenishment of metal ions based on an analysis
of the plating solution may be performed every few days. The full
replacement of the plating solution may be made when the amount of
the metal deposited reaches a certain value.
[0017] The applicant has proposed a substrate processing apparatus
of the batch processing type, including a substrate holder for
holding a plurality of substrates and immersing the substrates in a
processing liquid in a processing tank. The substrate holder,
holding the substrates, is rotated in the processing liquid in the
processing tank (see patent document 1). A substrate processing
apparatus of the batch processing type has also been proposed which
includes a carrier stage, a horizontal transfer robot, a posture
conversion mechanism, a pusher, a transport mechanism and a
substrate processing section, and which is configured to transport
and process a plurality of substrates in parallel (see patent
document 2). Further, an electroless plating tank has been proposed
which is capable of creating a uniform flow of a plating solution
over a surface of a flat plate-like plating object. The plating
tank is provided with a pair of impellers disposed on both sides of
the plating object and which rotate in the same direction to create
a flow of the plating solution between the plating object and a
guide plate. The direction of rotation of the impellers is
periodically reversed (see patent document 3).
PRIOR ART DOCUMENTS
[0018] Patent document 1: Japanese Patent Laid-Open Publication No.
2009-57593 Patent document 2: Japanese Patent No. 3974985 Patent
document 3: Japanese Patent Laid-Open Publication No. H5-311450
SUMMARY OF THE INVENTION
[0019] A well-known electroless plating apparatus using a batch
processing method includes a transport robot which holds a
plurality of substrates in a vertical position and travels in a
horizontal direction, and a plurality of processing tanks disposed
along the traveling direction of the transport robot. Substrates
are held and transported by the transport robot, and the substrates
held by the transport robot are immersed in a processing liquid in
a processing tank to process the substrates. The substrates are
processed sequentially in the processing tanks. It is also a common
practice to use a substrate carrier which holds a plurality of
substrates each in a vertical position, and to transport the
substrate carrier by a transport robot.
[0020] However, when a plurality of substrates are transported and
immersed in a processing liquid in a processing tank by using one
transport robot or one substrate carrier, a large amount of a
liquid chemical will be brought out of a chemical tank. A long
cleaning time and the use of a large amount of pure water will
therefore be needed for the next-step cleaning with water,
resulting in a lowered throughput and an increased cost.
[0021] Further, in the case of an electroless plating apparatus
using a batch processing method, it is necessary to frequently
perform flushing of, e.g., a plating solution circulation line to
remove extraneous matter from the interior of the line, e.g., with
an etching liquid. A strong demand therefore exists for the
development of an electroless plating apparatus which enables the
flushing to be performed easily and quickly.
[0022] When a plating solution is replenished with a metal based on
the above-described calculation or on periodic analysis of the
plating solution, it is difficult to precisely determine the state
of the plating solution immediately before plating. Further, the
state of the plating apparatus is not taken into consideration when
replenishing the plating solution with the metal. Therefore,
despite the correction of the metal concentration of the plating
solution by the replenishment of the metal, there can be a
significant change, e.g., a larger-than-expected decrease, in the
thickness of a plated film, e.g., due to unexpected deposition of
the metal during plating.
[0023] Generally in an electroless plating apparatus using a batch
processing method, a substrate holder, holding a plurality of
substrates such as semiconductor wafers in a vertical position, is
moved and, before or after the movement, the substrates are
simultaneously immersed in a processing liquid in a processing tank
to carry out processing of the substrates. When, for example,
moving the substrates held by the substrate holder from a
water-cleaning tank to a zincate treatment tank, water is likely to
accumulate on the lowest portions of the substrates because the
substrates are each held in a vertical position by the substrate
holder. Further, water that has adhered to the substrate holder
during processing of substrates of the preceding lot is likely to
remain in the substrate holder.
[0024] When a zincate treatment is carried out on a substrate
surface with water non-uniformly remaining on the substrate
surface, variation in the concentration of a zincate solution will
be produced upon mixing of the zincate solution with the remaining
water. The concentration variation of the zincate solution may lead
to poor appearance in the case of an unpatterned wafer and
increased in-plane variation in the thickness of a plated film in
the case of a patterned wafer.
[0025] FIG. 3 shows the relationship between the amount of zinc
displaced (plated) and the processing time (sec) in a zincate
treatment of an Al surface in the case where some water remains on
the surface (A.sub.1) and in the case where no water remains on the
surface (B.sub.1). FIG. 4 shows the relationship between the amount
of aluminum etched and the processing time (sec) in a zincate
treatment of an Al surface in the case where some water remains on
the surface (A.sub.2) and in the case where no water remains on the
surface (B.sub.2). As shown in FIGS. 3 and 4, in a zincate
treatment of an Al surface, which is generally performed at a high
Al etching rate and a high displacement plating rate, the amount of
aluminum etched and the amount of zinc displaced (plated) are
determined within the initial several seconds (2 to 5 seconds). The
data also indicates that the amount of aluminum etched and the
amount of zinc displaced (plated) are larger in a surface portion
where residual water is present. As will be appreciated from the
data shown in FIGS. 3 and 4, when a zincate treatment is carried
out on an Al surface with water non-uniformly remaining on the
surface, the surface aluminum will be non-uniformly displaced by
zinc, resulting in the formation of a rough zinc plated film.
Further, damage is likely to be caused to the underlying metal.
[0026] A large amount of zinc dissolves in an electroless plating
solution at a place where a large amount of zinc has deposited.
Thus, when a non-uniform rough zinc plated film has been formed on
a substrate surface, the zinc concentration in an electroless
plating solution becomes non-uniform. Because dissolved zinc acts
as a catalyst poison, the variation in the zinc concentration will
result in the formation of a plated film having a non-uniform
thickness. Further, when a plurality of substrates, held in a
vertical position and parallel to each other, are immersed in a
processing liquid, there is a difference in the processing time
between an upper portion and a lower portion of each substrate.
This may result in a difference in the thickness of a plated film
between the upper and lower portions of the substrate. The
difference will be market especially in a processing step whose
processing time is short, such as a zincate treatment step.
[0027] If a substrate is allowed to stand in the air for a long
time in order to remove water from the substrate, the substrate
surface will become dry and an oxide film will be produced on a
metal surface, causing poor displacement plating. If a considerable
amount of a processing liquid remains on a substrate or on a
substrate holder after withdrawing the substrate from the
processing liquid, the residual liquid will affect the amount of
etching and the degree of water cleaning.
[0028] A zincate treatment solution generally has a high viscosity.
When withdrawing a substrate from such a treatment solution, a
large amount of the solution is likely to adhere to the substrate
or a substrate holder and to be brought out of a treatment tank. An
Au plating solution is generally expensive, and therefore it is
desirable to minimize the amount of the processing liquid brought
out of a plating tank.
[0029] As is known, in electroless plating the flow state of a
plating solution, flowing along a surface of a substrate as a
plating object, greatly affects the thickness and the shape of a
plated film formed on the surface of the substrate.
[0030] FIG. 5 shows a substrate holder 44 provided in a well-known
conventional electroless plating apparatus using a batch processing
method. As shown in FIG. 5, the substrate holder 44 holds a
plurality of substrates W in a vertical position and parallel to
each other. The substrates W are supported on
horizontally-extending support rods 42 secured to a side plate 40.
The substrates W held by the substrate holder 44 are simultaneously
immersed in a plating solution flowing upward in a not-shown
plating tank.
[0031] As shown in FIG. 6, when the substrates W, held in a
vertical position and parallel to each other by the substrate
holder 44, are simultaneously immersed in the upward-flowing
plating solution, a flow of the plating solution, flowing in a
direction away from a substrate W, is created in the vicinity of
the lowest portion of the substrate W by collision of the plating
solution with the substrate W, whereas a flow of the plating
solution, flowing in a direction closer to a substrate W, is
created in the vicinity of the highest portion of the substrate W.
The occurrence of such flow turbulence in the plating solution
around the peripheral portions of a substrate W will produce a
difference in the thickness and the shape of a plated film, formed
on the surface of the substrate W, between the central portion and
the peripheral portions of the substrate W.
[0032] The present invention has been made in view of the above
situation. It is therefore a first object of the present invention
to provide an electroless plating apparatus which, despite using a
high-productivity batch processing method, can reduce the amount of
a liquid chemical, including a plating solution, brought out of a
processing tank, thereby reducing the cleaning time in a cleaning
step, can perform flushing of, e.g., the interior of a plating
solution circulation line easily and quickly, and can determine the
state of a plating solution and the state of a plating apparatus,
making it possible to manage the plating solution stably and extend
the lifetime of the plating solution.
[0033] It is a second object of the present invention to provide an
electroless plating apparatus and an electroless plating method
which, despite using a high-productivity batch processing method,
can minimize the amount of water brought from the preceding
processing step, thereby making it possible to perform a sequence
of successive processing steps in a stable and uniform manner.
[0034] It is a third object of the present invention to provide an
electroless plating apparatus which, despite using a
high-productivity batch processing method and employing a
relatively simple construction, allows a plating solution to flow
more uniformly over an entire area of a substrate surface, making
it possible to form a plated film with enhanced in-plane uniformity
of the thickness and the shape.
[0035] In order to achieve the first object, the present invention
provides an electroless plating apparatus comprising a pre-plating
treatment module including a pre-plating treatment tank for
carrying out a pre-plating treatment of a plurality of substrates,
a water-cleaning tank for cleaning with water the substrates after
the pre-plating treatment, and a substrate holder for supporting
the lower sides of the substrates and transporting the substrates
between the tanks; a plating module including a plating tank for
carrying out electroless plating of the substrates after the
pre-plating treatment, a water-cleaning tank for cleaning with
water the substrates after the electroless plating, and a substrate
holder for supporting the lower sides of the substrates and
transporting the substrates between the tanks; and an inter-module
substrate transport device for gripping the substrates from above
and transporting the substrates between the pre-plating treatment
module and the plating module. The pre-plating treatment tank is
provided with a pre-plating treatment solution circulation line
having a temperature control function for a pre-plating treatment
solution, and the plating tank is provided with a plating solution
circulation line having a filter and a temperature control function
for a plating solution. The plating solution circulation line is
connected to a flushing line for flushing the interior of the
plating solution circulation line and the interior of the plating
tank.
[0036] By thus providing a substrate holder for each processing
module, the construction of the substrate holder can be simplified.
This can reduce the amount of a liquid chemical, including a
plating solution, brought out of a processing tank, and can reduce
the cleaning time in a cleaning step, thereby increasing the
throughput. Further, flushing of the interior of the plating
solution circulation line and the interior of the plating tank,
e.g., with an etching liquid can be performed easily and quickly
via the flushing line connected to the plating solution circulation
line.
[0037] In a preferred aspect of the present invention, the
pre-plating treatment is a zincate treatment of an Al surface, and
the pre-plating treatment tank is a zincate treatment tank.
[0038] In the case where electroless plating is carried out on a
cupper surface, a Pd catalyst application treatment may be carried
out as a pre-plating treatment.
[0039] In a preferred aspect of the present invention, the
water-cleaning tank of the plating module is provided with a liquid
chemical supply line for supplying a liquid chemical for removing
an oxide film from a surface of a plated film.
[0040] In a preferred aspect of the present invention, at least one
of the pre-plating treatment tank and the water-cleaning tank both
of the pre-plating treatment module and the water-cleaning tank of
the plating module has a QDR (quick dump rinse) function.
[0041] The provision of a QDR function makes it possible to rinse
(clean) a substrate surface with water sufficiently in a short
time, enabling downsizing of the apparatus.
[0042] In a preferred aspect of the present invention, the
pre-plating treatment module and the plating module are housed in a
housing having an air conditioning function for creating a downward
air flow.
[0043] In a preferred aspect of the present invention, the
electroless plating apparatus further comprises a drying unit for
drying the substrates after post-plating cleaning with water.
[0044] In a preferred aspect of the present invention, the
electroless plating apparatus further comprises a substrate station
for temporarily placing thereon the substrates before
processing.
[0045] In a preferred aspect of the present invention, the plating
tank is provided with a plating solution replenishing device for
measuring the metal concentration of the plating solution
immediately before plating and the metal concentration of the
plating solution immediately after plating, calculating the amount
of metal deposited from the difference in the metal concentration
between the plating solutions, comparing the amount of metal
deposited with a target value and, according to the amount of metal
deposited, supplying a replenisher solution having a predetermined
metal concentration to the plating solution.
[0046] The use of the plating solution replenishing device makes it
possible to manage a plating solution based on accurate
determination of the state of the plating solution and the state of
the plating apparatus. It therefore becomes possible to reduce
variation in the thickness of a plated film and to respond to an
unexpected decrease in the plating rate while preventing damage to
a product due to a failure in the plating apparatus.
[0047] In a preferred aspect of the present invention, the metal
concentration of the replenisher solution is corrected and, when
the number of corrections exceeds a preset number of corrections, a
plating solution is re-prepared.
[0048] In a preferred aspect of the present invention, the metal
concentration of the plating solution after replenishing the
plating solution with an amount of metal, corresponding to the
amount of metal deposited during plating, and the metal
concentration of the plating solution immediately before the next
plating are measured and, when the latter metal concentration is
lower than the former metal concentration, the filter is
cleaned.
[0049] According to the electroless plating apparatus of the
present invention having the above construction, it becomes
possible to reduce the amount of a liquid chemical, including a
plating solution, brought out of a processing tank. This can reduce
the cost of the liquid chemical per substrate and, in addition, can
reduce the cleaning time in a cleaning step, thereby increasing the
throughput. Furthermore, flushing of, e.g., the interior of the
plating solution circulation line, e.g., with an etching liquid can
be performed easily and quickly.
[0050] The state of a plating solution and the state of the plating
apparatus may be continually monitored via the metal concentration
of the plating solution. This can avoid the occurrence of a failure
in the plating apparatus, thereby preventing damage to the
product.
[0051] In order to achieve the second object, the present invention
provides another electroless plating apparatus having a substrate
holder for holding a plurality of substrates in a vertical position
and parallel to each other, transporting the substrates and, before
and after the transportation, simultaneously immersing the
substrates in different processing liquids in different processing
tanks. The substrate holder comprises support rods each having a
plurality of support grooves for placing therein peripheral
portions of the substrates to support the substrates; and a water
removal mechanism for removing water that has collected in the
support grooves and their vicinities.
[0052] For example, after withdrawing the substrates, held by the
substrate holder, from a processing liquid, water (processing
liquid) that has collected in the support grooves, for placing
therein peripheral portions of the substrates to support the
substrates, and their vicinities can be removed by the water
removal mechanism. This can minimize the amount of water brought to
the subsequent processing, making it possible to carry out the
subsequent processing more stably.
[0053] In a preferred aspect of the present invention, the water
removal mechanism includes a pressurized gas supply line and a
liquid intrusion prevention line which are to be selectively
connected to an open end of a central hole which is closed at one
end and provided in an interior of each support rod, and which
communicates with the support grooves via communicating holes.
[0054] By supplying a pressurized gas, such as pressurized air,
through the pressurized gas supply line into the central hole and
the communicating holes of each support rod, and jetting the
pressurized gas in the support grooves, water (processing liquid)
that has collected in the support grooves and their vicinities can
be blown off by the pressurized gas. The liquid intrusion
prevention line can prevent a processing liquid from intruding into
the central hole and the communicating holes of each support rod
during processing.
[0055] In a preferred aspect of the present invention, the water
removal mechanism includes a water suction line and a liquid
intrusion prevention line which are to be selectively connected to
an open end of a central hole which is closed at one end and
provided in an interior of each support rod, and which communicates
with the support grooves via communicating holes.
[0056] Water (processing liquid) that has collected in the support
grooves and their vicinities can be removed by suction by vacuuming
the support grooves through the water suction line, the central
hole and the communicating holes. The water (processing liquid)
that has been sucked in may be recovered in a processing tank. This
can reduce the amount of water (processing liquid) brought out of
the processing tank.
[0057] In a preferred aspect of the present invention, the
electroless plating apparatus further comprises a liquid
circulation line for circulating a processing liquid in at least
one of the processing tanks.
[0058] In a preferred aspect of the present invention, the liquid
intrusion prevention line is comprised of a pressurized fluid
supply line for supplying a pressurized fluid into the central
hole.
[0059] In a preferred aspect of the present invention, the
communicating holes open onto surfaces to be plated of the
substrates held by the substrate holder.
[0060] This can mainly remove water remaining in each support
groove on the side of the surface to be plated of each
substrate.
[0061] In a preferred aspect of the present invention, the
electroless plating apparatus further comprises a control section
for controlling a substrate immersion speed at which the
substrates, held by the substrate holder, are immersed in a
processing liquid in at least one of the processing tanks, and a
substrate withdrawal speed at which the substrates are withdrawn
from the processing liquid in the processing tank.
[0062] The control of the substrate immersion speed can reduce the
time it takes to fully immerse the substrates, from the lower ends
to the upper ends, in the processing liquid. The control of the
substrate withdrawal speed can prevent a large amount of water from
remaining on the substrates after withdrawal from the processing
liquid.
[0063] In a preferred aspect of the present invention, the
substrate immersion speed is not less than 100 mm/s, and the
substrate withdrawal speed is not more than 50 mm/s.
[0064] In a preferred aspect of the present invention, the
electroless plating apparatus further comprises a substrate
movement mechanism for vibrating or vertically or horizontally
swinging the substrate holder when immersing the substrates, held
by the substrate holder, in a processing liquid in at least one of
the processing tanks.
[0065] Diffusion of the processing liquid over the surface of each
substrate can be promoted by immersing the substrates, held by the
substrate holder, in the processing liquid while vibrating or
vertically or horizontally swinging the substrate holder.
[0066] In a preferred aspect of the present invention, the
electroless plating apparatus further comprises a pure water jet
mechanism for jetting pure water toward the substrates, held by the
substrate holder, after immersing the substrates in a processing
liquid in at least one of the processing tanks and withdrawing the
substrates from the processing liquid.
[0067] The jet cleaning of the substrates can further reduce the
amount of the processing liquid adhering to the substrates and
brought out of the processing tank.
[0068] The present invention also provides an electroless plating
method comprising placing peripheral portions of a plurality of
substrates in support grooves provided in support rods of a
substrate holder so that the substrates are held in a vertical
position and parallel to each other by the substrate holder;
immersing the substrates, held by the substrate holder, in a first
processing liquid in a first processing tank to carry out first
processing, and withdrawing the substrates after the first
processing from the first processing liquid; moving the substrate
holder, holding the substrates, to a position just above a second
processing tank; and immersing the substrates, held by the
substrate holder, in a second processing liquid in the second
processing tank to carry out second processing, and withdrawing the
substrates after the second processing from the second processing
liquid. Water that has collected in the support grooves and their
vicinities is removed before, during or after the first or second
processing.
[0069] In a preferred aspect of the present invention, water that
has collected in the support grooves and their vicinities is
removed before the substrates are held in a vertical position and
parallel to each other by the substrate holder.
[0070] In a preferred aspect of the present invention, water that
has collected in the support grooves and their vicinities is
removed after the substrates are withdrawn from the first
processing liquid or the second processing liquid.
[0071] In a preferred aspect of the present invention, the
substrates are immersed in the first processing liquid or the
second processing liquid at a speed of not less than 100 mm/s, and
withdrawn from the first processing liquid or the second processing
liquid at a speed of not more than 50 mm/s.
[0072] In a preferred aspect of the present invention, the
substrates held by the substrate holder are immersed in the first
processing liquid or the second processing liquid while vibrating
or vertically or horizontally swinging the substrate holder.
[0073] The electroless plating apparatus and the electroless
plating method of the present invention having the above
constructions, despite using a high-productivity batch processing
method, can minimize the amount of water brought from the preceding
processing step, thereby making it possible to perform a sequence
of successive processing steps in a stable and uniform manner.
[0074] In order to achieve the third object, the present invention
provides yet another electroless plating apparatus comprising a
plating tank for holding therein a plating solution while creating
an upward flow of the plating solution; a substrate holder for
holding a plurality of substrates in a vertical position and
parallel to each other, and immersing the substrates in the plating
solution in the plating tank; and a plurality of guide plates each
for surrounding the periphery of each of the substrates, held by
the substrate holder and immersed in the plating solution, and
creating a flow of the plating solution around the periphery of the
substrate, said flow being continuous with a flow of the plating
solution flowing along a surface of the substrate.
[0075] By thus forming a flow of the plating solution, which is
continuous with the flow of the plating solution flowing along a
surface of each substrate, around the periphery of the substrate,
it becomes possible to prevent the occurrence of flow turbulence in
the plating solution around the periphery of each substrate. This
makes it possible to form a plated film, having enhanced in-plane
uniformity of the thickness and the shape, on the surface of each
substrate.
[0076] In a preferred aspect of the present invention, the distance
between each of the substrates held by the substrate holder and the
guide plate, surrounding the periphery of the substrate, is 1 to 10
mm.
[0077] The distance between each substrate and each guide plate is
desirably as small as possible, but in practice, it is preferably
in the range of 1 to 10 mm in view of machining accuracy, etc.
[0078] In a preferred aspect of the present invention, the guide
plates are connected by a plurality of connecting plates, each
connecting adjacent two guide plates and extending linearly and
vertically, to form a grid-like structure.
[0079] This can increase the strength and the stability of the
guide plates while preventing the occurrence of flow turbulence in
the plating solution flowing upwardly at the sides of the
substrates.
[0080] In a preferred aspect of the present invention, the guide
plates consist of lower guide plates for surrounding the
peripheries of the lower halves of the substrates held by the
substrate holder and immersed in the plating solution, and upper
guide plates for surrounding the peripheries of the upper halves of
the substrates, the lower guide plates being mounted to the
substrate holder and the upper guide plates being mounted to the
back surface of a lid for opening/closing the top opening of the
plating tank.
[0081] In a preferred aspect of the present invention, the guide
plates consist of lower guide plates for surrounding the
peripheries of the lower halves of the substrates held by the
substrate holder and immersed in the plating solution, and upper
guide plates for surrounding the peripheries of the upper halves of
the substrates, the lower guide plates being mounted to an interior
surface of the plating tank and the upper guide plates being
mounted to the back surface of a lid for opening/closing the top
opening of the plating tank.
[0082] The thus-constructed electroless plating apparatus of the
present invention can form a flow of a plating solution, which is
continuous with the flow of the plating solution flowing along a
surface of each substrate, around the periphery of the substrate.
This makes it possible to prevent the occurrence of flow turbulence
in the plating solution around the periphery of each substrate,
thereby forming a plated film, having enhanced in-plane uniformity
of the thickness and the shape, on the surface of each
substrate.
BRIEF DESCRIPTION OF THE DRAWINGS
[0083] FIG. 1 is a cross-sectional view illustrating bonding of
microbumps;
[0084] FIG. 2 is a cross-sectional view illustrating TSV
bonding;
[0085] FIG. 3 is a graph showing the relationship between the
amount of zinc displaced (plated) and the processing time (sec) in
a zincate treatment of an Al surface;
[0086] FIG. 4 is a graph showing the relationship between the
amount of aluminum etched and the processing time (sec) in a
zincate treatment of an Al surface;
[0087] FIG. 5 is a perspective view of a substrate holder used in a
conventional electroless plating apparatus;
[0088] FIG. 6 is a diagram illustrating the flow of a plating
solution as observed when substrates, held by the substrate holder
shown in FIG. 5, are simultaneously immersed in the plating
solution flowing upward;
[0089] FIG. 7A is a cross-sectional view showing a substrate having
a bump pad, and FIG. 7B is a cross-sectional view showing the
substrate after forming an Ni plated film and an Au plated film on
the bump pad by electroless plating;
[0090] FIG. 8 is an overall plan view of an electroless plating
apparatus according to an embodiment of the present invention;
[0091] FIG. 9 is a schematic front view of a substrate holding tool
of an inter-module substrate transport device;
[0092] FIG. 10 is a right side view of the substrate holding tool
of FIG. 9;
[0093] FIG. 11 is a schematic vertical sectional front view showing
a zincate treatment tank and a substrate holder of a zincate
treatment module;
[0094] FIG. 12 is a schematic sectional side view showing the
zincate treatment tank and the substrate holder of the zincate
treatment module;
[0095] FIG. 13 is a schematic vertical sectional front view showing
a water-cleaning tank and the substrate holder of the zincate
treatment module;
[0096] FIG. 14 is a schematic vertical sectional front view showing
an Ni plating tank and a substrate holder of an Ni plating
module;
[0097] FIG. 15 is a flow chart showing a sequence of processing
steps performed by the electroless plating apparatus shown in FIG.
8;
[0098] FIG. 16 is a flow chart illustrating the management of an Ni
plating solution for use in electroless Ni plating;
[0099] FIG. 17 is a schematic vertical sectional front view of an
electroless plating apparatus according to another embodiment of
the present invention, illustrating the apparatus when immersing
substrates in a processing liquid (nitric acid) in a pre-cleaning
tank;
[0100] FIG. 18 is a schematic vertical sectional front view
illustrating the electroless plating apparatus shown in FIG. 17
upon processing of the substrates in a pre-cleaning module;
[0101] FIG. 19 is a schematic vertical sectional front view
illustrating the electroless plating apparatus shown in FIG. 17
when transferring the substrates from the substrate holder of the
pre-cleaning module to the substrate holder of a zincate treatment
module;
[0102] FIG. 20 is a schematic vertical sectional front view
illustrating the electroless plating apparatus shown in FIG. 17
when immersing the substrates in a zincate solution in a zincate
treatment tank;
[0103] FIG. 21 is a schematic vertical sectional front view
illustrating the electroless plating apparatus shown in FIG. 17
when withdrawing the substrates from the zincate solution in the
zincate treatment tank after immersing the substrates in the
zincate solution in the zincate treatment tank;
[0104] FIG. 22 is a schematic vertical sectional front view
illustrating the electroless plating apparatus shown in FIG. 17
when immersing the substrates in a plating solution in an Au
plating tank;
[0105] FIG. 23 is a schematic vertical sectional front view
illustrating the electroless plating apparatus shown in FIG. 17
when withdrawing the substrates from the plating solution in the Au
plating tank;
[0106] FIG. 24 is a schematic vertical sectional front view showing
the pre-cleaning tank and the substrate holder of the pre-cleaning
module;
[0107] FIG. 25 is a schematic sectional side view showing the
pre-cleaning tank and the substrate holder of the pre-cleaning
module;
[0108] FIG. 26 is a schematic vertical sectional front view showing
the water-cleaning tank and the substrate holder of the
pre-cleaning module;
[0109] FIG. 27 is a schematic diagram showing, together with a
water removal mechanism, an enlarged cross-section of a portion of
a support rod provided in the substrate holder of the pre-cleaning
module;
[0110] FIG. 28A is a cross-sectional view taken along line A-A of
FIG. 27, and FIG. 28B is a cross-sectional view equivalent to FIG.
28A, showing a variation of the support rod;
[0111] FIG. 29 is a schematic diagram showing, together with a
water removal mechanism, an enlarged cross-section of a portion of
a support rod provided in the substrate holder of the zincate
treatment module;
[0112] FIG. 30 is an enlarged cross-sectional view of a main
portion of another example of a support rod provided in a substrate
holder;
[0113] FIG. 31 is an enlarged cross-sectional view of a main
portion of yet another example of a support rod provided in a
substrate holder;
[0114] FIG. 32 is an enlarged cross-sectional view of a main
portion of yet another example of a support rod provided in a
substrate holder;
[0115] FIG. 33A is an external view of a plated wafer sample having
an Ni plated film formed on an Al surface of an unpatterned wafer,
and an Au plated film formed on the Ni plated film, the plated
films having been formed by a sequence of electroless plating
processing steps according to the present invention, FIG. 33B is an
external view of a reference wafer sample, FIG. 33C is an external
view of another reference wafer sample, and FIG. 33D is an external
view of yet another reference wafer sample;
[0116] FIG. 34A shows an in-plane film thickness distribution map
of a plated wafer sample having an Ni plated film formed on an Al
surface of a patterned wafer, and an Au plated film formed on the
Ni plated film, the plated films having been formed by a sequence
of electroless plating processing steps according to the present
invention, and FIG. 34B shows an external view and a
cross-sectional view of the wafer sample after a zincate
treatment;
[0117] FIG. 35A shows an in-plane film thickness distribution map
of a reference wafer sample having an Ni plated film formed on an
Al surface of a patterned wafer, and an Au plated film formed on
the Ni plated film, the plated films having been formed by
conventional common electroless plating, and FIG. 35B shows an
external view and a cross-sectional view of the wafer sample after
a zincate treatment;
[0118] FIG. 36 is a schematic vertical sectional front view showing
an Ni plating tank and a substrate holder, provided in an
electroless plating apparatus according to yet another embodiment
of the present invention;
[0119] FIG. 37 is a schematic sectional side view showing the Ni
plating tank and the substrate holder, provided in the electroless
plating apparatus shown in FIG. 36;
[0120] FIG. 38 is a schematic view of a lid for opening/closing the
top opening of the Ni plating tank;
[0121] FIG. 39 is a diagram illustrating the flow of a plating
solution as observed when substrates, each surrounded by an upper
guide plate and a lower guide plate, are simultaneously immersed in
the plating solution flowing upward;
[0122] FIG. 40 is a schematic vertical sectional front view showing
yet another Ni plating tank and a substrate holder;
[0123] FIG. 41 is a schematic sectional side view of the Ni plating
tank and the substrate holder shown in FIG. 40;
[0124] FIG. 42 is a perspective view of a grid-like lower guide
plate structure comprised of lower guide plates connected by
connecting plates;
[0125] FIG. 43 is a front view showing a lower guide plate
structure and an upper guide plate structure, surrounding the
peripheries of substrates; and
[0126] FIG. 44 is a cross-sectional view taken along line B-B of
FIG. 43.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0127] Preferred embodiments of the present invention will now be
described in detail with reference to the drawings. The same
reference numerals will be used throughout the drawings and the
description to refer to the same or like members, components, etc.,
and a duplicate description thereof will be omitted.
[0128] The following description illustrates an exemplary case
where a substrate W, such as a semiconductor wafer, having an Al
bump pad 45, e.g., having a diameter D of several .mu.m, is
prepared, as shown in FIG. 7A and, as shown in FIG. 7B, a zinc
plated film 46 is formed by displacement plating on a surface of
the bump pad 45 by carrying out a zincate treatment as a
pre-plating treatment on a surface of the substrate W, and an Ni
plated film 47, e.g., having a thickness of 1.6 .mu.m, is formed by
electroless plating on a surface of the zinc plated film 46, and
then an Au plated film 48, e.g., having a thickness of 0.1 .mu.m,
is formed by displacement plating (electroless plating) on a
surface of the Ni plated film 47.
[0129] FIG. 8 is an overall plan view schematically showing the
construction of an electroless plating apparatus according to an
embodiment of the present invention. As shown in FIG. 8, the
electroless plating apparatus includes a generally-rectangular
housing 50 having an air conditioning function for creating a
downward air flow, and loading ports 52, disposed adjacent to the
housing 50, each for placing thereon a substrate cassette for
storing a large number of substrates, such as semiconductor wafers.
The loading port 52 can be mounted with an open cassette, a SMIF
(standard mechanical interface) pod or a FOUP (front opening
unified pod).
[0130] In the housing 50 are arranged in series, starting from the
module farthest from the loading ports 52, a pre-cleaning module 58
including a pre-cleaning tank 54 and a water-cleaning tank 56, a
zincate treatment (pre-plating treatment) module 64 including a
zincate treatment tank (pre-plating treatment tank) 60 for carrying
out a zincate treatment as a pre-plating treatment and a
water-cleaning tank 62, an Ni plating module 70 including an Ni
plating tank 66 and a water-cleaning tank 68, an Au plating module
76 including an Au plating tank 72 and a water-cleaning tank 74,
and a drying unit 78.
[0131] The pre-cleaning module 58 is provided with a vertically and
horizontally movable substrate holder 80a for transporting a
plurality of substrates between the pre-cleaning tank 54 and the
water-cleaning tank 56, and immersing the substrates in a
processing liquid in the pre-cleaning tank 54 and a processing
liquid in the water-cleaning tank 56. Similarly, the zincate
treatment module 64 is provided with a substrate holder 80b for
transporting the substrates between the zincate treatment tank 60
and the water-cleaning tank 62, the Ni plating module 70 is
provided with a substrate holder 80c for transporting the
substrates between the Ni plating tank 66 and the water-cleaning
tank 68, and the Au plating module 76 is provided with a substrate
holder 80d for transporting the substrates between the Au plating
tank 72 and the water-cleaning tank 74.
[0132] At least one of the zincate treatment tank 60 and the
water-cleaning tank 62 both of the zincate treatment module 64, the
water-cleaning tank 68 of the Ni plating module 70 and the
water-cleaning tank 74 of the Au plating module 76 preferably has a
QDR (quick dump rinse) function. The provision of a QDR function
makes it possible to rinse (clean) a substrate surface with water
sufficiently in a short time and enables downsizing of the
apparatus.
[0133] An inter-module substrate transport device 86, including a
substrate holding tool 84, which is movable along a guide 82, is
disposed parallel to the substrate holders 80a-80d and the drying
unit 78 for transferring a plurality of substrates between the
substrate holders 80a-80d and the drying unit 78.
[0134] By thus providing the substrate holders 80a-80d in the
processing modules 58, 64, 70 and 76, respectively, separately from
the inter-module substrate transport device 86, the construction of
the substrate holders 80a-80d can be simplified. This can reduce
the amount of a liquid chemical, including a plating solution,
brought out of a processing tank, and can reduce the cleaning time
in a cleaning step, thereby increasing the throughput. The
substrate holders 80a-80d are each provided with a substrate
movement mechanism for vertically moving or vibrating substrates as
necessary.
[0135] In this embodiment, the inter-module substrate transport
device 86 is used also to transport substrates, held by the
substrate holding tool 84, to the drying unit 78 to dry the
substrates.
[0136] In the housing 50 and beside the loading ports 52 is
disposed a movable substrate carry-in/carry-out transport device 90
for simultaneously carrying substrates from the loading ports 52
into the housing 50, or simultaneously carrying substrates from the
housing 50 to the loading ports 52. A substrate station 92 for
temporarily placing substrates thereon is disposed between the
substrate carry-in/carry-out transport device 90 and the drying
unit 78.
[0137] The substrate carry-in/carry-out transport device 90
simultaneously receives, e.g., 25 substrates stored in the loading
ports 52 and transports the substrates to the substrate station 92,
where the substrates are temporarily placed in a vertical position.
This operation is repeated twice so that, e.g., 50 substrates are
temporary placed in a vertical position on the substrate station
92. The inter-module substrate transport device 86 simultaneously
receives, e.g., 50 substrates from the substrate station 92,
transports the substrates to the pre-cleaning module 58 and
simultaneously transfers the substrates to the substrate holder 80a
of the pre-cleaning module 58. On the other hand, substrates after
processing are temporarily placed on the substrate station 92 and,
by the reverse operation to the above-described operation, are
returned to the loading ports 52 by the substrate
carry-in/carry-out transport device 90.
[0138] In this embodiment, the pre-cleaning tank 54 uses nitric
acid as a pre-cleaning liquid to remove a surface oxide film from a
substrate W, and to remove a surface of a zinc plated film formed
by displacement plating on a surface of a bump pad 45 (see FIG. 7A)
during a double zincate treatment. A pre-cleaning liquid (nitric
acid) storage tank 100 for storing the pre-cleaning liquid (nitric
acid) is disposed outside the housing 50, and a pre-cleaning liquid
supply line 102 extending from the pre-cleaning liquid storage tank
100 is connected to the pre-cleaning tank 54.
[0139] A zincate solution storage tank 104 for storing a zincate
solution, e.g., a sodium hydroxide-based solution containing zinc
oxide, is disposed outside the housing 50, and a zincate solution
supply line 106 extending from the zincate solution storage tank
104 is connected to the zincate treatment tank 60.
[0140] An Ni plating solution storage tank 108 for storing an Ni
plating solution, and a flushing liquid storage tank 110 for
storing a flushing liquid (etching liquid), which is nitric acid in
this embodiment, for use in the below-described flushing are
disposed outside the housing 50, and an Ni plating solution supply
line 112 extending from the Ni plating solution storage tank 108
and a flushing line 114 extending from the flushing liquid storage
tank 110 are connected to the Ni plating tank 66.
[0141] Further, an Au plating solution storage tank 116 for storing
an Au plating solution, and a flushing liquid storage tank 118 for
storing a flushing liquid (etching liquid), which is a mixture of
nitric acid and hydrochloric acid in this embodiment, for use in
the below-described flushing are disposed outside the housing 50,
and an Au plating solution supply line 120 extending from the Au
plating solution storage tank 116 and a flushing line 122 extending
from the flushing liquid storage tank 118 are connected to the Au
plating tank 72.
[0142] The Ni plating solution storage tank 108 is provided with a
plating solution analyzer 124 for analyzing an Ni plating solution
to measure the metal (Ni) ion concentration, the pH, etc. of the Ni
plating solution. Similarly, the Au plating solution storage tank
116 is provided with a plating solution analyzer 126 for analyzing
an Au plating solution to measure the metal (Au) ion concentration,
the pH, etc. of the Au plating solution.
[0143] FIG. 9 is a schematic front view of the substrate holding
tool 84 of the inter-module substrate transport device 86, and FIG.
10 is a schematic right side view of the substrate holding tool 84.
As shown in FIGS. 9 and 10, the substrate holding tool 84 includes
a base portion 130 and pairs of openable/closable transport arms
132. The transport arms 132 in the open state are lowered from
above a plurality of (e.g., 50) substrates W, arranged in a
vertical position and parallel to each other, and the substrate
holding tool 84 simultaneously grasps the substrates W by closing
the transport arms 132. The holding of the substrates W is released
by the reverse operation. To prevent contamination in each tank,
the transport arms 132 are cleaned at a proper time.
[0144] FIG. 11 is a schematic vertical sectional front view showing
the zincate treatment tank 60 and the substrate holder 80b of the
zincate treatment module 64, and FIG. 12 is a schematic sectional
side view showing the zincate treatment tank 60 and the substrate
holder 80b of the zincate treatment module 64. As shown in FIGS. 11
and 12, the zincate treatment tank 60 includes an inner tank 140
and an outer tank 142, with an overflow tank 144 being formed
between the inner tank 140 and the outer tank 142. To the bottom of
the overflow tank 144 of the zincate treatment tank 60 is connected
one end of a zincate solution (pre-plating treatment solution)
circulation line 152 having a pump 146, a temperature controller
148 and a filter 150. The other end of the zincate solution
circulation line 152 is connected to the bottom of the inner tank
140. A straightening plate 154 for straightening the flow of the
zincate solution is disposed at the bottom of the inner tank
140.
[0145] By the actuation of the pump 146, the zincate solution in
the zincate treatment tank 60 is circulated through the zincate
solution circulation line 152, the inner tank 140 and the overflow
tank 144 while the zincate solution is filtered by the filter 150
and controlled, e.g., at 50.degree. C. by the temperature
controller 148. In the zincate solution circulation line 152, the
upstream side of the pump 146 and the downstream side of the filter
150 are connected by a short-circuit line 156. The above-described
zincate solution supply line 106 extending from the zincate
solution storage tank 104 is connected to the zincate solution
circulation line 152.
[0146] The pre-cleaning tank 54 has a similar construction to the
zincate treatment tank 60. However, the temperature controller 148
may be omitted in the pre-cleaning tank 54 because the processing
liquid (nitric acid) generally does not need control of its
temperature (generally used at room temperature).
[0147] As shown in FIGS. 11 and 12, the substrate holder 80b
includes a pair of side plates 164 located in opposite positions at
a predetermined distance from each other, and a plurality of
support rods 166, extending between the side plates 164, for
supporting peripheral portions of substrates W from below.
[0148] The substrate holder 80b of the zincate treatment module 64
can support the lower sides of a plurality of (e.g., 50) substrates
W on the support rods 166, so that the substrates W can be smoothly
transferred between the substrate holder 80b and the substrate
holding tool 84 of the inter-module substrate transport device 86,
which grips the substrates W from above. The other substrate
holders 80a, 80c, 80d have the same construction as the substrate
holder 80b.
[0149] FIG. 13 is a schematic vertical sectional front view showing
the water-cleaning tank 62 and the substrate holder 80b of the
zincate treatment module 64. The water-cleaning tank 62 uses pure
water as a processing liquid. The water-cleaning tank 62 includes
an inner tank 170 and an outer tank 172, with an overflow tank 174
being formed between the inner tank 170 and the outer tank 172. A
pure water supply line 176 is connected to the bottom of the inner
tank 170, and a water discharge line 178 is connected to the bottom
of the overflow tank 174. Pure water, which has been supplied
through the pure water supply line 176 into the inner tank 170,
fills the inner tank 170, and then overflows the inner tank 170 and
flows into the overflow tank 174, and is discharged through the
water discharge line 178.
[0150] The other water-cleaning tanks 56, 68, 74 have the same
construction as the water-cleaning tank 62. As shown by the
imaginary line in FIG. 13, in the case of the water-cleaning tanks
68, 74 of the plating modules 70, 76, a liquid chemical supply line
180 for supplying a liquid chemical for removing an oxide film from
a surface of a plated film may be connected to the bottom of the
inner tank 170.
[0151] FIG. 14 is a schematic vertical sectional front view showing
the Ni plating tank 66 and the substrate holder 80c of the Ni
plating module 70. As described above, the substrate holder 80c has
the same construction as the above-described substrate holder 80b.
The same reference numerals will therefore be used for the same
members or components, and a duplicate description thereof will be
omitted.
[0152] As shown in FIG. 14, the Ni plating tank 66 includes an
inner tank 190 and an outer tank 192, with an overflow tank 194
being formed between the inner tank 190 and the outer tank 192. To
the bottom of the overflow tank 194 of the Ni plating tank 66 is
connected one end of a plating solution circulation line 202 having
a pump 196, a temperature controller 198 and a filter 200. The
other end of the plating solution circulation line 202 is connected
to the bottom of the inner tank 190. To the bottom of the inner
tank 190 is also connected a straightening plate 204 for
straightening the flow of an Ni plating solution.
[0153] By the actuation of the pump 196, the plating solution in
the Ni plating tank 66 is circulated through the plating solution
circulation line 202, the inner tank 190 and the overflow tank 194
while the plating solution is filtered by the filter 200 and
controlled, e.g., at 80.degree. C. by the temperature controller
198. In the plating solution circulation line 202, the upstream
side of the pump 196 and the downstream side of the filter 200 are
connected by a short-circuit line 206.
[0154] The above-described Ni plating solution supply line 112
extending from the Ni plating solution storage tank 108 and the
above-described flushing line 114 extending from the flushing
liquid storage tank 110 are connected to the plating solution
circulation line 152. After removing the Ni plating solution from
the Ni plating tank 66 and the plating solution circulation line
202, the interior of the plating solution circulation line 202 and
the interior of the Ni plating solution storage tank 108 can be
flushed with a flushing liquid (etching liquid) by introducing the
flushing liquid (etching liquid), such as nitric acid, into the Ni
plating solution storage tank 108 through the flushing line 114 and
the plating solution circulation line 202, and circulating the
flushing liquid by the pump 196.
[0155] The overflow tank 194 is provided with a plating solution
analyzer 210 for analyzing the Ni plating solution in the overflow
tank 194 to measure the metal (Ni) ion concentration, the pH, etc.
of the Ni plating solution, and a plating solution replenishing
device 212 for supplying a replenisher solution having a
predetermined metal concentration to the Ni plating solution in the
overflow tank 194 based on the results of analysis by the plating
solution analyzer 210.
[0156] The Au plating tank 72 has a similar construction to the Ni
plating tank 66, except that the temperature of an Au plating
solution in the Au plating tank 72 is controlled, e.g., at
75.degree. C.
[0157] A sequence of processing steps performed by the electroless
plating apparatus shown in FIG. 8 will now be described with
reference also to FIG. 15.
[0158] First, as described above, a plurality of (e.g., 50)
substrates W, which have been temporarily placed on the substrate
station 92, are grasped from above by the substrate holding tool 84
of the inter-module substrate transport device 86, and the
substrates W are transported to the pre-cleaning module 58. The
substrate holder 80a of the pre-cleaning module 58 simultaneously
receives the substrates W from the substrate holding tool 84 of the
inter-module substrate transport device 86 and holds the substrates
W each in a vertical position. At this moment, the substrate holder
80a lies just above the pre-cleaning tank 54.
[0159] The substrate holder 80a is then lowered to immerse the
substrates W, held by the substrate holder 80a, in a processing
liquid (nitric acid) in the pre-cleaning tank 54. The substrates W
are kept immersed in the processing liquid, e.g., for one minute to
remove an oxide film from the surface of each substrate W.
[0160] Next, the substrates W, held by the substrate holder 80a,
are withdrawn from the processing liquid (nitric acid) in the
pre-cleaning tank 54, and are moved to a position just above the
water-cleaning tank 56. The substrate holder 80a is then lowered to
immerse the substrates W, held by the substrate holder 80a, in a
processing liquid (pure water) in the water-cleaning tank 56. The
substrates W are kept immersed in the processing liquid (pure
water), e.g., for 5 minutes to clean the surface of each substrate
W with water. Thereafter, the substrates W, held by the substrate
holder 80a, are withdrawn from the processing liquid (pure water)
in the water-cleaning tank 56.
[0161] Next, the substrates W, held in a vertical position by the
substrate holder 80a, are transferred via the substrate holding
tool 84 of the inter-module substrate transport device 86 to the
substrate holder 80b of the zincate treatment module 64. The
substrate holder 80b lies just above the zincate treatment tank
60.
[0162] Next, the substrate holder 80b is lowered to immerse the
substrates W, held by the substrate holder 80b, in a processing
liquid (zincate solution) in the zincate treatment tank 60. The
substrates W are kept immersed in the processing liquid, e.g., for
30 seconds to carry out a first zincate treatment of a surface of
an Al bump pad 45 (see FIG. 7A) of each substrate W. Thereafter,
the substrates W, held by the substrate holder 80b, are withdrawn
from the processing liquid (zincate solution) in the zincate
treatment tank 60.
[0163] Next, the substrates W, held by the substrate holder 80b,
are moved to a position just above the water-cleaning tank 62. The
substrate holder 80b is then lowered to immerse the substrates W,
held by the substrate holder 80b, in a processing liquid (pure
water) in the water-cleaning tank 62. The substrates W are kept
immersed in the processing liquid (pure water), e.g., for one
minute to clean the surface of each substrate W with water.
Thereafter, the substrates W, held by the substrate holder 80b, are
withdrawn from the processing liquid (pure water) in the
water-cleaning tank 62.
[0164] The above-described cycle of processing steps: immersion of
the substrates in nitric acid; the subsequent cleaning of the
substrates with water; immersion of the substrates in the zincate
solution; and the subsequent cleaning of the substrates with water,
are repeated twice. Thus, the substrates are subjected to a double
zincate treatment. Rough zinc (zinc plated film) is formed by the
first zincate treatment on the surface of the Al bump pad 45 (see
FIG. 7A) of each substrate. The zinc (zinc plated film) is removed
by the second processing with nitric acid, and the surface of the
bump pad 45 can be densely displaced by zinc by the second zincate
treatment. A zinc plated film 46, as shown in FIG. 7B, is formed in
this manner.
[0165] Next, the substrates W after the double zincate treatment
are transferred via the substrate holding tool 84 of the
inter-module substrate transport device 86 to the substrate holder
80c of the Ni plating module 70. The substrates W, held in a
vertical position by the substrate holder 80c, are immersed in an
Ni plating solution, e.g., at 80.degree. C. in the Ni plating tank
66, e.g., for 50 minutes to form an Ni plated film 47, as shown in
FIG. 7B. The substrates W after the Ni plating are cleaned with
water by immersing the substrates in a processing liquid (pure
water) in the water-cleaning tank 68, e.g., for 5 minutes.
[0166] Next, the substrates W after the Ni plating are transferred
via the substrate holding tool 84 of the inter-module substrate
transport device 86 to the substrate holder 80d of the Au plating
module 76. The substrates W, held in a vertical position by the
substrate holder 80d, are then immersed in an Au plating solution,
e.g., at 75.degree. C. in the Au plating tank 72, e.g., for 10
minutes to form an Au plated film 48, as shown in FIG. 7B. The
substrates W after the Au plating are cleaned with water by
immersing the substrates in a processing liquid (pure water) in the
water-cleaning tank 74, e.g., for 5 minutes.
[0167] Next, the substrates W after the Au plating are held by the
substrate holding tool 84 of the inter-module substrate transport
device 86 and transported to the drying unit 78, where the
substrates W are dried, e.g., by air blowing or by a drying method
using an IPA (isopropyl alcohol) vapor.
[0168] The substrate holding tool 84 of the inter-module substrate
transport device 86 transports the substrates W after drying to the
substrate station 92 and places the substrates W on the substrate
station 92. The substrates W on the substrate station 92 are
retuned by the substrate carry-in/carry-out transport device 90 to
the loading ports 52. The sequence of the electroless plating
processing steps is thus completed.
[0169] When electroless Ni plating is carried out in the
above-described manner, using a batch processing method, substances
such as Ni adhere to inside surfaces of the Ni plating tank 66 and
the plating solution circulation line 202. It is therefore
necessary to flush out such substances, adhering to the inside
surfaces of the Ni plating tank 66 and the plating solution
circulation line 202, e.g., with an etching liquid after processing
of, e.g., 100 substrates.
[0170] In this embodiment, when the need of flushing arises, an Ni
plating solution is removed from the Ni plating tank 66 and the
plating solution circulation line 202, and flushing of the interior
of the Ni plating tank 66 and the interior of the plating solution
circulation line 202, e.g., with an etching liquid is performed by
introducing a flushing liquid, for example nitric acid which is
commonly used for etching of Ni, through the flushing line 114 into
the Ni plating tank 66 and the plating solution circulation line
202 and circulating the flushing liquid through the circulation
system. Flushing of the interior of the Ni plating tank 66 and the
interior of the plating solution circulation line 202, e.g., with
an etching liquid can thus be performed easily and quickly.
[0171] The same holds for the Au plating tank 72. However, in the
case of the Au plating tank 72, a mixture of nitric acid and
hydrochloric acid, which is commonly used for etching of Au, for
example, may be used as a flushing liquid.
[0172] Management of an Ni plating solution for use in electroless
Ni plating will now be described with reference to the flow chart
shown in FIG. 16.
[0173] First, plating conditions, such as a pattern opening ratio
of a substrate and plating time, are set (step 1). The amount of
metal deposited by plating can be determined, from a predetermined
film forming rate, as a target amount F (plating condition) of
metal deposited. Next, the metal concentration A of a plating
solution upon its preparation is measured (step 2), and a
determination is made as to whether the metal concentration A of
the plating solution upon its preparation falls within a specified
metal concentration range (step 3). If the metal concentration A of
the plating solution upon its preparation does not fall within the
specified range, the plating solution is replenished with the metal
(step 4), and the process is returned to step 3. When the
replenishment of the plating solution with the metal (step 4) is
repeated twice, it is determined that there is an abnormality in
the apparatus (step 5), and an alarm may be triggered.
[0174] If it is determined that the metal concentration A of the
plating solution upon its preparation falls within the specified
range, the metal concentration B of the plating solution
immediately before plating is measured (step 6). Step 3 may be
skipped when plating is carried out shortly after the preparation
of the plating solution. Plating is actually carried out (step 7),
and the metal concentration C of the plating solution immediately
after plating is measured (step 8).
[0175] Next, the actual amount F (B, C) of metal actually deposited
by plating is calculated from the concentration difference between
the metal concentration B of the plating solution immediately
before plating and the metal concentration C of the plating
solution immediately after plating and from a known amount of the
plating solution, and the actual amount F (B, C) of metal deposited
thus calculated is compared with the target amount F (plating
condition) of metal deposited (step 9). The degree of aging of the
plating solution is determined by the comparison, and a decrease in
the plating rate associated with the aging is corrected.
[0176] In particular, when the actual amount F (B, C) of metal
deposited is lower than the target amount F (plating condition) of
metal deposited (F (B, C)<F (plating condition)), the metal
concentration of a replenisher solution is corrected to a value
predetermined, e.g., by actual measurement (step 10). When the
actual amount F (B, C) of metal deposited is equal to or higher
than the target amount F (plating condition) of metal deposited (F
(B, C).gtoreq.F (plating condition)), on the other hand, no
correction is made to the metal concentration of the replenisher
solution. The replenisher solution is supplied from the plating
solution replenishing device 212 (see FIG. 14) to the plating
solution according to the amount of metal deposited (step 11), and
the metal concentration D of the plating solution immediately after
the supply of the replenisher solution is measured (step 12). By
managing the plating solution in this manner, the lifetime of the
plating solution can be increased while minimizing a change in the
plating rate.
[0177] When carrying out the next plating, the metal concentration
B of the plating solution immediately before plating is re-measured
(step 12). The difference is calculated between the metal
concentration D of the plating solution immediately after the
supply of the replenisher solution and the metal concentration B of
the plating solution immediately before plating, and a
determination is made as to whether the metal concentration of the
plating solution has been decreasing with time (step 13). In
particular, if the difference between the metal concentration D of
the plating solution immediately after the supply of the
replenisher solution and the metal concentration B of the plating
solution immediately before plating is positive (D-B>0), it is
determined that a certain amount of the plating metal has deposited
in the plating apparatus (the Ni plating tank 66 and the plating
solution circulation line 202). Therefore, the filter 200 (see FIG.
14) is cleaned, e.g., with an etching liquid (step 15), and the
process is returned to step 11.
[0178] If the difference between the metal concentration D of the
plating solution immediately after the supply of the replenisher
solution and the metal concentration B of the plating solution
immediately before plating is zero or negative (D-B.ltoreq.0), a
determination is made as to whether the number "n" of corrections
to the metal concentration of the replenisher solution exceeds a
predetermined number "nr" of corrections (step 16). If the number
"n" of corrections does not exceed the predetermined number "nr"
(n.ltoreq.nr), the process is returned to step 7. If the number "n"
of corrections exceeds the predetermined number "nr" (n>nr), a
plating solution is re-prepared (step 17), and the process is
returned to the start.
[0179] Thus, the plating amount (which can be converted to the
thickness of plated film) is determined from the metal
concentrations of a plating solution before and after plating and,
according to the difference between the calculated plating amount
and an estimated plating amount, a replenisher solution having a
predetermined metal concentration is supplied to the plating
solution. At this moment, the metal concentration of the plating
solution may be either returned to the initial metal concentration
or made higher than the initial metal concentration by supplying
the replenisher solution to the plating solution. By managing the
plating solution in the above-described manner, it becomes possible
to prevent the plating rate from decreasing due to a factor other
than the metal concentration of the plating solution and reduce a
change in the thickness of a plated film as a whole, and to respond
to an unexpected decrease in the plating rate.
[0180] FIGS. 17 through 23 are schematic vertical sectional front
views of an electroless plating apparatus according to another
embodiment of the present invention, illustrating the apparatus in
sequence of process steps. As shown in FIGS. 17 through 23, the
electroless plating apparatus comprises a pre-cleaning module 254
including a pre-cleaning tank 250 and a water-cleaning tank 252, a
zincate treatment module 260 including a zincate treatment tank 256
and a water-cleaning tank 258, an Ni plating module 266 including
an Ni plating tank 262 and a water-cleaning tank 264, an Au plating
module 272 including an Au plating tank 268 and a water-cleaning
tank 270, and a drying module 276 including a drying unit 274.
[0181] The pre-cleaning module 254 is provided with a vertically
and horizontally movable substrate holder 280a for transporting a
plurality of substrates between the pre-cleaning tank 250 and the
water-cleaning tank 252. Similarly, the zincate treatment module
260 is provided with a substrate holder 280b, the Ni plating module
266 is provided with a substrate holder 280c, the Au plating module
272 is provided with a substrate holder 280d, and the drying module
276 is provided with a substrate holder 280e.
[0182] An inter-module substrate transport device 290, including a
substrate holding tool 288 which is movable along a guide 286, is
disposed parallel to the substrate holders 280a-280e for
transferring a plurality of substrates between the substrate
holders 280a-280e.
[0183] The substrate holder 280a is provided with a control section
for controlling a substrate immersion speed at which substrates W,
held by the substrate holder 280a, are immersed in a processing
liquid in a processing tank, for example, at a speed of not less
than 100 mm/s, and controlling a substrate withdrawal speed at
which the substrates W, held by the substrate holder 280a, are
withdrawn from the processing liquid in the processing tank, for
example, at a speed of not more than 50 mm/s. The substrate holder
280a is also provided with a substrate movement mechanism for
vibrating or vertically or horizontally swinging the substrate
holder 280a when immersing substrates W, held by the substrate
holder 280a, in a processing liquid in a processing tank. The
provision of such control section and movement mechanism also holds
for the substrate holders 280b, 280c and 280d.
[0184] The substrate holder 280a includes a pair of side plates
292a located in opposite positions at a predetermined distance from
each other, and a plurality of support rods 294a, extending between
the side plates 292a, for supporting peripheral portions of
substrates W. Similarly, the substrate holder 280b includes a pair
of side plates 292b and a plurality of support rods 294b, the
substrate holder 280c includes a pair of side plates 292c and a
plurality of support rods 294c, the substrate holder 280d includes
a pair of side plates 292d and a plurality of support rods 294d,
and the substrate holder 280e includes a pair of side plates 292e
and a plurality of support rods 294e.
[0185] In this embodiment, above the Au plating tank 268 is
disposed a pure water jet nozzle (not shown) for jetting pure water
toward substrates W held by the substrate holder 280d, which have
been withdrawn from a processing liquid (Au plating solution) in
the Au plating tank 268.
[0186] FIG. 24 is a schematic vertical sectional front view showing
the pre-cleaning tank 250 and the substrate holder 280a of the
pre-cleaning module 254, and FIG. 25 is a schematic sectional side
view showing the pre-cleaning tank 250 and the substrate holder
280a of the pre-cleaning module 254. In this embodiment, the
pre-cleaning tank 250 uses nitric acid as a processing liquid to
remove a surface oxide film from a substrate W, and to remove the
surface of a zinc plated film formed by displacement plating on a
surface of a bump pad 45 (see FIG. 7A) during a double zincate
treatment. The pre-cleaning tank 250 includes an inner tank 300 and
an outer tank 302, with an overflow tank 304 being formed between
the inner tank 300 and the outer tank 302. To the bottom of the
overflow tank 304 of the pre-cleaning tank 250 is connected one end
of a processing liquid circulation line 312 having a pump 306, a
temperature controller 308 and a filter 310. The other end of the
processing liquid circulation line 312 is connected to the bottom
of the inner tank 300. A straightening plate 314 for straightening
the flow of the processing liquid is disposed at the bottom of the
inner tank 300.
[0187] By the actuation of the pump 306, the processing liquid
(nitric acid) in the pre-cleaning tank 250 is circulated through
the processing liquid circulation line 312, the inner tank 300 and
the overflow tank 304 while the processing liquid is filtered by
the filter 310 and, if necessary, controlled at a certain
temperature by the temperature controller 308. The temperature
controller 308 may be omitted because the processing liquid (nitric
acid) in the pre-cleaning tank 250 generally does not need control
of its temperature (generally used at room temperature).
[0188] Except for the use of different processing liquids, the
zincate treatment tank 256, the Ni plating tank 262 and the Au
plating tank 268 each have the same construction as the
pre-cleaning tank 250. A zincate solution, e.g., a sodium
hydroxide-based solution containing zinc oxide, is used as a
processing liquid, e.g., at 50.degree. C. in the zincate treatment
tank 256. An Ni plating solution is used as a processing liquid,
e.g., at 80.degree. C. in the Ni plating tank 262. An Au plating
solution is used as a processing liquid, e.g., at 75.degree. C. in
the Au plating tank 268.
[0189] FIG. 26 is a schematic vertical sectional front view showing
the water-cleaning tank 252 and the substrate holder 280a of the
pre-cleaning module 254. The water-cleaning tank 252 uses pure
water as a processing liquid. The water-cleaning tank 252 includes
an inner tank 320 and an outer tank 322, with an overflow tank 324
being formed between the inner tank 320 and the outer tank 322. A
pure water supply line 326 is connected to the bottom of the inner
tank 320, and a water discharge line 328 is connected to the bottom
of the overflow tank 324. Pure water, which has been supplied
through the pure water supply line 326 into the inner tank 320,
fills the inner tank 320, and then overflows the inner tank 320 and
flows into the overflow tank 324, and is discharged through the
water discharge line 328. Each of the other water-cleaning tanks
258, 264, 270 have the same construction as the water-cleaning tank
252.
[0190] FIG. 27 is a schematic diagram showing, together with a
water removal mechanism, an enlarged cross-section of a portion of
a support rod 294a provided in the substrate holder 280a of the
pre-cleaning module 254. FIG. 28A is a cross-sectional view taken
along line A-A of FIG. 27, and FIG. 28B is a cross-sectional view
equivalent to FIG. 28A, showing a variation of the support rod.
[0191] As shown in FIGS. 27 and 28A, the support rod 294a has a
plurality of support grooves 330 for placing therein peripheral
portions of substrates W to support the substrates W in a vertical
position. The support grooves 330 are arranged at a predetermined
pitch, e.g., at a pitch of 5 mm, in the longitudinal direction of
the support rod 294a. A central hole 332, closed at one end, is
provided in the interior of the support rod 294a. The central hole
332 communicates with the support grooves 330 via communicating
holes 334a each consisting of a plurality of holes. To the open end
of the central hole 332 is connected a water removal mechanism 336a
for removing water that has collected in the support grooves 330
and their vicinities.
[0192] The water removal mechanism 336a includes a pressurized gas
supply line 338 and, in this embodiment, a liquid circulation line
340a for circulating a processing liquid through the central hole
332. The pressurized gas supply line 338 and the liquid circulation
line 340a are to be selectively connected to the open end of the
central hole 332 of the support rod 294a. The pressurized gas
supply line 338 is connected to a pressurized gas supply source 342
for supplying, for example, high-pressure air, and has an on-off
valve 344a provided anterior to the junction with the liquid
circulation line 340a. The liquid circulation line 340a has a pump
346 and an on-off valve 344b provided anterior to the junction with
the pressurized gas supply line 338, and opens, e.g., into the
water-tank 252 as schematically shown in FIG. 27.
[0193] By closing the on-off valve 344b of the liquid circulation
line 340a and opening the on-off valve 344a of the pressurized gas
supply line 338, a high-pressure gas, such as air, is introduced
into the central hole 332 and the communicating holes 334a of the
support rod 294a, and jetted in the support grooves 330 to blow off
water that has collected in the support grooves 330 and their
vicinities. The removal of water may be performed either when
substrates W are not supported or supported with their peripheral
portions placed in the support grooves 330.
[0194] When, for example, substrates W held by the substrate holder
280a are immersed in a processing liquid (pure water) in the
water-cleaning tank 252 for water cleaning of the substrates W, the
on-off valve 344b of the liquid circulation line 340a is opened and
the on-off valve 344a of the pressurized gas supply line 338 is
closed. This allows the processing liquid (pure water) in the
water-cleaning tank 252 to pass through the central hole 332 of the
support rod 294a and return to the water-cleaning tank 252 in a
circulatory manner. The interiors of the communicating holes 334a
and the central hole 332 can be cleaned by thus allowing the
processing liquid (pure water) in the water-cleaning tank 252 to
circulate through the communicating holes 334a and the central hole
332.
[0195] In this embodiment, as shown in FIG. 28A, in the support rod
294a of the substrate holder 280a, the central hole 332
communicates with each support groove 330 via each communicating
hole 334a consisting of a plurality of holes. However, as shown in
FIG. 28B, the central hole 332 may communicate with each support
groove 330 via a fan-shaped slit-like communicating hole 334b. This
holds for the support rods 294b-294d of the substrate holders
280b-280d. It is possible to omit the communicating holes 334a: the
central hole 332 may communicate directly with each support groove
330.
[0196] FIG. 29 is a schematic diagram showing, together with a
water removal mechanism, an enlarged cross-section of a portion of
a support rod 294b provided in the substrate holder 280b of the
zincate treatment module 260. As with the above-described support
rod 294a, the support rod 294b has a plurality of support grooves
330 for placing therein peripheral portions of substrates W to
support the substrates W in a vertical position, as shown in FIG.
29. A central hole 332, closed at one end, is provided in the
interior of the support rod 294b. The central hole 332 communicates
with the support grooves 330 via communicating holes 334a each
consisting of a plurality of holes. To the open end of the central
hole 332 is connected a water removal mechanism 336b for removing
water that has collected in the support grooves 330 and their
vicinities.
[0197] The water removal mechanism 336b includes a water suction
line 350 and, in this embodiment, a liquid intrusion prevention
line 340b which is a pressurized fluid supply line. The water
suction line 350 and the liquid intrusion prevention line 340b are
to be selectively connected to the open end of the central hole 332
of the support rod 294b. The water suction line 350 is connected to
a water suction source 352, for example, a vacuum pump, and has an
on-off valve 344c provided anterior to the junction with the liquid
intrusion prevention line (pressurized fluid supply line) 340b. The
liquid intrusion prevention line 340b is connected to a fluid
supply source 354 for pressurizing and supplying a gas such as
N.sub.2 gas or air, or a liquid such as pure water, and has an
on-off valve 344d provided anterior to the junction with the water
suction line 350.
[0198] By closing the on-off valve 344d of the liquid intrusion
prevention line 340b and opening the on-off valve 344c of the water
suction line 350, water that has collected in the support grooves
330 and their vicinities is sucked in through the communicating
holes 334a and the central hole 332 of the support rod 294b. As
with the above-described support rod 294a, the removal of water may
be performed either when substrates W are not supported or
supported with their peripheral portions placed in the support
grooves 330. The water (zincate treatment solution) that has been
sucked in through the water suction line 350 is returned to the
zincate treatment tank 256.
[0199] When, for example, substrates W held by the substrate holder
280b are immersed in a processing liquid (zincate solution) in the
zincate treatment tank 256 for zincate treatment of the substrates
W, the on-off valve 344d of the liquid intrusion prevention line
340b is opened and the on-off valve 344c of the water suction line
350 is closed so that a gas, such as N.sub.2 gas or air, is passed
through the central hole 332 and the communicating holes 334a of
the support rod 294b, and is jetted in the support grooves 330.
This can prevent the processing liquid (zincate solution) in the
zincate treatment tank 256 from intruding through the communicating
holes 334a into the central hole 332. In order to avoid
precipitation from the processing liquid in the communicating holes
334a and the central hole 332, both having a small diameter,
intrusion of the processing liquid into those holes should be
prevented as much as possible.
[0200] As with the above-described support rod 294a, support
grooves 330 are provided also in each support rod 294c of the
substrate holder 280c of the Ni plating module 266 and in each
support rod 294d of the substrate holder 280d of the Au plating
module 272. The support grooves 330 of each support rod 294c or
294d communicate with a central hole 332, closed at one end and
provided in the interior of the support rod, via communicating
holes 334a each consisting of a plurality of holes. To the open end
of the central hole 332 is connected a water removal mechanism 336b
having the same construction as described above, including a water
suction line 350 and a liquid intrusion prevention line 340b which
is a pressurized fluid supply line.
[0201] A sequence of processing steps performed by the electroless
plating apparatus of this embodiment will now be described with
reference to FIGS. 17 through 23 and to the above-described FIG.
15.
[0202] First, as shown in FIG. 17, the substrate holder 280a of the
pre-cleaning module 254 simultaneously receives a plurality of
substrates W from the substrate holding tool 288 of the
inter-module substrate transport device 290 and holds the
substrates W each in a vertical position. At this moment, the
substrate holder 280a lies just above the pre-cleaning tank 250.
The substrates W held by the substrate holder 280a are arranged at
a predetermined pitch, with a peripheral portion of each substrate
W lying in a support groove 330 of each support rod 294a.
[0203] The substrate holder 280a is lowered to immerse the
substrates W, held by the substrate holder 280a, in a processing
liquid (nitric acid) in the pre-cleaning tank 250. The substrates W
are kept immersed in the processing liquid, e.g., for one minute to
remove an oxide film from the surface of each substrate W. If
necessary, while immersing the substrates W in the processing
liquid (nitric acid), the on-off valve 344b of the liquid
circulation line 340a may be opened and the on-off valve 344a of
the pressurized gas supply line 338 may be closed so that the
processing liquid (nitric acid) is sucked into the communicating
holes 334a of each support rod 294a, passed through the liquid
circulation line 340a and returned to the pre-cleaning tank 250 in
a circulatory manner. This holds for the below-described
embodiment.
[0204] Next, as shown in FIG. 18, the substrates W, held by the
substrate holder 280a, are withdrawn from the processing liquid
(nitric acid) in the pre-cleaning tank 250, and are moved to a
position just above the water-cleaning tank 252. The substrate
holder 280a is then lowered to immerse the substrates W, held by
the substrate holder 280a, in a processing liquid (pure water) in
the water-cleaning tank 252. The substrates W are kept immersed in
the processing liquid (pure water), e.g., for 5 minutes to clean
the surface of each substrate W with water. As described above,
during the water cleaning of the substrates W, the interiors of the
communicating holes 334a and the central hole 332 may be cleaned by
allowing the processing liquid (pure water) in the water-cleaning
tank 252 to circulate through the communicating holes 334a and the
central hole 332. Thereafter, the substrates W, held by the
substrate holder 280a, are withdrawn from the processing liquid
(pure water) in the water-cleaning tank 252 at a controlled speed,
e.g., not more than 50 mm/s. By thus controlling the substrate
withdrawal speed, e.g., at a speed of not more than 50 mm/s, the
processing liquid (pure water) can be prevented from remaining on
the surfaces of the substrates W in a large amount.
[0205] After withdrawing the substrates W from the processing
liquid (pure water), the on-off valve 344b of the liquid
circulation line 340a is closed and the on-off valve 344a of the
pressurized gas supply line 338 is opened so that a high-pressure
gas, such as air, is introduced into the central hole 332 and the
communicating holes 334a of each support rod 294a, and jetted in
the support grooves 330 to blow off water that has collected in the
support grooves 330 and their vicinities. Most of the water that
has been blown off returns to the water-cleaning tank 252. Thus,
the amount of water brought out of the water-cleaning tank 252 can
be reduced. Further, water that has collected at the lower end of a
substrate can also be removed to a considerable extent. This can
reduce the adverse effect of mixing of water into a zincate
solution on the next zincate treatment.
[0206] Next, as shown in FIG. 19, the substrates W, held in a
vertical position by the substrate holder 280a, are transferred via
the substrate holding tool 288 of the inter-module substrate
transport device 290 to the substrate holder 280b of the zincate
treatment module 260. The substrate holder 280b lies just above the
zincate treatment tank 256. Before the substrate holder 280b holds
the substrates W, the on-off valve 344d of the liquid intrusion
prevention line 340b is closed and the on-off valve 344c of the
water suction line 350 is opened so that water that has collected
in the support grooves 330 and their vicinities is sucked in
through the communicating holes 334a and the central hole 332 of
each support rod 294b.
[0207] Next, as shown in FIG. 20, the substrate holder 280b is
lowered to immerse the substrates W, held by the substrate holder
280b, in a processing liquid (zincate solution) in the zincate
treatment tank 256. The substrates W are kept immersed in the
processing liquid, e.g., for 30 seconds to carry out a first
zincate treatment of a surface of an Al bump pad 45 (see FIG. 7A)
of each substrate W. When the substrates W held by the substrate
holder 280b are immersed in the processing liquid (zincate
solution), the on-off valve 344d of the liquid intrusion prevention
line 340b is opened and the on-off valve 344c of the water suction
line 350 is closed. This prevents the processing liquid in the
zincate treatment tank 256 from intruding through the communicating
holes 334a into the central hole 332 in each support rod 294b. The
same holds true for the below-described embodiment.
[0208] The substrate immersion speed at which the substrates W,
held by the substrate holder 280b, are immersed in the processing
liquid (zincate solution) in the zincate treatment tank 256 is
controlled, for example, at a speed of not less than 100 mm/s. Such
a controlled substrate immersion speed, for example, of not less
than 100 mm/s. can reduce the time it takes to fully immerse the
substrates W, from the lower ends to the upper ends, in the
processing liquid (zincate solution). When immersing the substrates
W in the processing liquid (zincate solution), the substrate holder
280b is preferably vibrated or vertically or horizontally swung by
the substrate movement mechanism. This can promote diffusion of the
processing liquid over the surface of each substrate W.
[0209] Next, as shown in FIG. 21, the substrates W, held by the
substrate holder 280b, are withdrawn from the processing liquid
(zincate solution) in the zincate treatment tank 256 at a
controlled speed, e.g., not more than 50 mm/s. By controlling the
substrate withdrawal speed, e.g. at a speed of not more than 50
mm/s, the processing liquid (zincate solution) can be prevented
from remaining on the surfaces of the substrates W in a large
amount. This in turn can prevent non-uniform processing and, in
addition, can prevent an increase in the amount of the processing
liquid brought out of the zincate treatment tank 256.
[0210] After withdrawing the substrates W from the processing
liquid (zincate solution), the on-off valve 344d of the liquid
intrusion prevention line 340b is closed and the on-off valve 344c
of the water suction line 350 is opened so that water (zincate
solution) that has collected in the support grooves 330 and their
vicinities is sucked in through the communicating holes 334a and
the central hole 332 of each support rod 294b. By thus removing
water (zincate solution) by suction from the support grooves 330
and reusing it, the amount of water (zincate solution) brought out
of the zincate treatment tank 256 can be minimized.
[0211] Next, the substrates W, held by the substrate holder 280b,
are moved to a position just above the water-cleaning tank 258. The
substrate holder 280b is then lowered to immerse the substrates W,
held by the substrate holder 280b, in a processing liquid (pure
water) in the water-cleaning tank 258. The substrates W are kept
immersed in the processing liquid (pure water), e.g., for one
minute to clean the surface of each substrate W with water. During
the water cleaning of the substrates W, the interiors of the
communicating holes 334a and the central hole 332 of each support
rod 294b may be cleaned by passing the processing liquid (pure
water) through the liquid intrusion prevention line 340b and
jetting the liquid in the support grooves 330. Thereafter, the
substrates W held by the substrate holder 280b are withdrawn from
the processing liquid (pure water) in the water-cleaning tank
258.
[0212] The above-described cycle of processing steps: immersion of
the substrates in nitric acid; the subsequent cleaning of the
substrates with water; immersion of the substrates in the zincate
solution; and the subsequent cleaning of the substrates with water,
are repeated twice. Thus, the substrates are subjected to a double
zincate treatment. Rough zinc (zinc plated film) is formed by the
first zincate treatment on the surface of the Al bump pad 45 (see
FIG. 7A) of the each substrate. The zinc (zinc plated film) is
removed by the second processing with nitric acid, and the surface
of the bump pad 45 can be densely displaced by zinc by the second
zincate treatment. A zinc plated film 46, as shown in FIG. 7B, is
formed in this manner.
[0213] Next, the substrates W after the double zincate treatment
are transferred via the substrate holding tool 288 of the
inter-module substrate transport device 290 to the substrate holder
280c of the Ni plating module 266. The substrates W, held in a
vertical position by the substrate holder 80c, are immersed in a
processing liquid (Ni plating solution), e.g., at 80.degree. C. in
the Ni plating tank 262, e.g., for 50 minutes to form an Ni plated
film 47, as shown in FIG. 7B. The substrates W after the Ni plating
are cleaned with water by immersing the substrates in a processing
liquid (pure water) in the water-cleaning tank 264, e.g., for 5
minutes.
[0214] Next, the substrates W after the Ni plating are transferred
via the substrate holding tool 288 of the inter-module substrate
transport device 290 to the substrate holder 280d of the Au plating
module 272. As shown in FIG. 22, the substrate holder 280d is
lowered to immerse the substrates W, held in a vertical position by
the substrate holder 280d, in a processing liquid (Au plating
solution), e.g., at 75.degree. C. in the Au plating tank 268. The
substrates W are kept immersed, e.g., for 10 minutes to form an Au
plated film 48, as shown in FIG. 7B.
[0215] Next, as shown in FIG. 23, the substrates W, held by the
substrate holder 280d, are withdrawn from the processing liquid (Au
plating solution) in the Au plating tank 268 at a controlled speed,
e.g., not more than 50 mm/s. Thereafter, water (Au plating
solution) that has collected in the support grooves 330 and their
vicinities is removed by suction as in the above-described manner.
Thereafter, pure water is jetted from the pure water jet nozzle
toward the substrates W held by the substrate holder 280d, thereby
cleaning off water (Au plating solution) adhering to the substrates
W and returning the Au plating solution to the Au plating tank 268.
The amount of pure water jetted may be such as to replenish pure
water that has been lost by processing of the substrates. The water
jet cleaning can further reduce the amount of the Au plating
solution, which is generally expensive, brought out of the Au
plating tank 268.
[0216] A pure water jet nozzle may be provided above the Ni plating
tank 262 to clean off an Ni plating solution, adhering to
substrates after Ni plating, with pure water jetted from the pure
water jet nozzle and return the Ni plating solution to the Ni
plating tank 262.
[0217] Next, the substrates W after the Au plating are immersed in
a processing liquid (pure water) in the water-cleaning tank 280,
e.g., for 5 minutes to clean the substrates W with water.
[0218] Next, the substrates W after the Au plating are transferred
via the substrate holding tool 288 of the inter-module substrate
transport device 290 to the substrate holder 280e of the drying
module 276. The substrates W, held in a vertical position by the
substrate holder 280e, are dried in the drying unit 274, e.g., by
air blowing or by a drying method using IPA (isopropyl alcohol)
vapor.
[0219] The substrate holding tool 288 of the inter-module substrate
transport device 290 receives the substrates W after drying from
the substrate holder 280e, and transports the substrates W, e.g.,
to a substrate stage. The sequence of the electroless plating
processing steps is thus completed.
[0220] As shown in FIG. 30, when substrates W are supported by the
support rods 294a of the substrate holder 280a such that the
surfaces Wa to be plated of the substrates W face in the same
direction, the central hole 332 of each support rod 294a may
communicate with the support grooves 330 via communicating holes
334c each having an opening that faces a surface Wa to be plated of
a substrate W.
[0221] As shown in FIG. 31, when substrates W are supported by the
support rods 294a of the substrate holder 280a such that the
surfaces Wa to be plated of the substrates W face alternately in
opposite directions, the central hole 332 of each support rod 294a
may communicate with the support grooves 330 via communicating
holes 334d each having a Y-shaped cross-section so that the hole
334d faces the opposing surfaces Wa to be plated of two adjacent
substrates W. As shown in FIG. 32, it is possible to provide
additional communicating holes 334e each having a Y-shaped
cross-section so that the hole 334e faces the opposing back
surfaces Wa of two adjacent substrates W.
[0222] This also holds for the support rods 294b-294e of the other
substrate holders 280b-280e.
[0223] FIG. 33A is an external view of a plated wafer sample having
a 6 .mu.m Ni plated film formed on a 1 .mu.m Al surface layer of an
unpatterned wafer, and a 0.1 .mu.m Au plated film formed on the Ni
plated film, the plated films having been formed by a sequence of
electroless plating processing steps performed by the electroless
plating apparatus shown in FIGS. 17 through 23.
[0224] FIG. 33B is an external view of a reference wafer sample
having a 6 .mu.m Ni plated film formed on a 1 .mu.m Al surface
layer of an unpatterned wafer, and a 0.1 .mu.m Au plated film
formed on the Ni plated film, the plated films having been formed
by conventional common electroless plating. FIG. 33C is an external
view of a reference wafer sample having a 6 .mu.m Ni plated film
formed on a 1 .mu.m Al surface layer of an unpatterned wafer, and a
0.1 .mu.m Au plated film formed on the Ni plated film, the plated
films having been formed by conventional common electroless plating
except that after cleaning the wafer (substrate) with pure water by
immersing the wafer in the pure water, the wafer is withdrawn from
the pure water at a speed of not more than 50 mm/s, and
subsequently the wafer is immersed in a zincate solution at an
immersion speed of not less than 100 mm/s. FIG. 33D is an external
view of a reference wafer sample having a 6 .mu.m Ni plated film
formed on a 1 .mu.m Al surface layer of an unpatterned wafer, and a
0.1 .mu.m Au plated film formed on the Ni plated film, the plated
films having been formed by conventional common electroless plating
except that when immersing the wafer in a zincate solution, the
wafer is vibrated or swung.
[0225] As can be seen in FIGS. 33A through 33D, the streaked
appearance of the reference wafer sample of FIG. 33B can be
improved by withdrawing the wafer from the cleaning water at a
speed of not more than 50 mm/s, and subsequently immersing the
wafer in the zincate solution at an immersion speed of not less
than 100 mm/s (see FIG. 33C), or by immersing the wafer in the
zincate solution while vibrating or swinging the wafer (see FIG.
33D). A plated wafer having a good appearance can be obtained by
additionally performing the removal of water that has collected in
the support grooves and their vicinities of the support rods of the
substrate holders (see FIG. 33A).
[0226] FIG. 34A shows an in-plane film thickness distribution map
of a plated wafer sample having a 6 .mu.m Ni plated film formed on
a 1 .mu.m Al surface layer (bump pad) of a patterned wafer, and a
0.1 .mu.m Au plated film formed on the Ni plated film, the plated
films having been formed by a sequence of electroless plating
processing steps performed by the electroless plating apparatus
shown in FIGS. 17 through 23. FIG. 34B shows an external view and a
cross-sectional view of the wafer sample after a zincate
treatment.
[0227] FIG. 35A shows an in-plane film thickness distribution map
of a reference wafer sample having a 6 .mu.m Ni plated film formed
on a 1 .mu.m Al surface layer (bump pad) of a patterned wafer, and
a 0.1 .mu.m Au plated film formed on the Ni plated film, the plated
films having been formed by conventional common electroless
plating. FIG. 35B shows an external view and a cross-sectional view
of the reference wafer sample after a zincate treatment.
[0228] As can be seen in FIGS. 34A through 35B, the plated wafer
sample of FIG. 34A, having the plated films formed according to the
present invention, has a significantly reduced variation in the
in-plane film thickness distribution. This is considered to be due
to enhanced uniformity in the amount of zinc displaced (plated).
Further, the plated wafer sample according to the present invention
has a decreased roughness on the bump pad and reduced damage to the
bump pad.
[0229] While the water removal mechanism 336a, including the
pressurized gas supply line 338 and the liquid circulation line
340a for circulating a processing liquid through the central hole
332 of each support rod 294a, and the water removal mechanism 336b,
including the water suction line 350 and the liquid intrusion
prevention line 340b which is a pressurized fluid supply line, have
been described, it is possible to arbitrarily combine one of a
pressurized gas supply line and a water suction line and one of a
liquid circulation line and a pressurized fluid supply line to make
up a water removal mechanism for use in the present invention.
[0230] FIG. 36 is a schematic vertical sectional front view showing
an Ni plating tank 380 and a substrate holder 384, provided in an
electroless plating apparatus according to yet another embodiment
of the present invention. FIG. 37 is a schematic sectional side
view showing the Ni plating tank 380 and the substrate holder 384,
provided in the electroless plating apparatus shown in FIG. 36. As
shown in FIGS. 36 and 37, the Ni plating tank 380 includes an inner
tank 420 for holding therein an Ni plating solution as a processing
liquid and an outer tank 422, with an overflow tank 424 being
formed between the inner tank 420 and the outer tank 422. To the
bottom of the overflow tank 424 of the Ni plating tank 380 is
connected one end of a plating solution circulation line 432 having
a pump 426, a temperature controller 428 and a filter 430. The
other end of the plating solution circulation line 432 is connected
to the bottom of the inner tank 420. A straightening plate 434 for
straightening the flow of the plating solution is disposed at the
bottom of the inner tank 420.
[0231] A lid 436 for closing the top opening of the Ni plating tank
380 to prevent evaporation of the Ni plating solution held in the
tank 380 is provided openably and closably via hinges 438 (see FIG.
38) at the top of the Ni plating tank 380.
[0232] The substrate holder 384 includes a side plate 440 and a
plurality of support rods 442, each extending horizontally with one
end secured to the side plate 440, for supporting substrates W from
below. The substrate holder 384 can hold a plurality of (e.g., 50)
substrates W parallel to each other by the support rods 442.
[0233] Lower guide plates 450 are secured to the support rods 442
and are each disposed in a position which surrounds the periphery
of the lower half of one of the substrates W held by the substrate
holder 384. The thickness of each lower guide plate 450 is set
equal to the thickness of each substrate W so that the front
surface (back surface) of a substrate W, held by the substrate
holder 384, becomes flush with the front surface (back surface) of
the corresponding lower guide plate 450 surrounding the periphery
of the lower half of the substrate W.
[0234] The distance between a substrate W, held by the substrate
holder 384, and the corresponding lower guide plate 450,
surrounding the periphery of the lower half of the substrate W, is
set at 1 to 10 mm. This distance is desirably as small as possible,
but in practice, it is preferably in the range of 1 to 10 mm in
view of machining accuracy, etc.
[0235] On the other hand, as schematically shown in FIG. 36, to the
back surface of the lid 436, which opens/closes the top opening of
the Ni plating tank 380, are mounted upper guide plates 452 which,
when the lid 436 is closed, each lie in a position surrounding the
periphery of the upper half of one of the substrates W held by the
substrate holder 384. As with the lower guide plates 450, the
thickness of each upper guide plate 452 is set equal to the
thickness of each substrate W, and the distance between a substrate
W, held by the substrate holder 384, and the corresponding upper
guide plate 452, surrounding the periphery of the upper half of the
substrate W, is set at 1 to 10 mm.
[0236] With this structure, when substrates W, held by the
substrate holder 384, are immersed in a plating solution in the Ni
plating tank 380, and when the lid 436 is closed, substantially the
entire periphery of each substrate W is surrounded by the lower
guide plate 450 and the upper guide plate 452.
[0237] When an upward flow of the plating solution is created in
the Ni plating tank 380 while the substrates W, held by the
substrate holder 384 and substantially surrounded by the lower
guide plates 450 and the upper guide plates 452, are immersed in
the plating solution, a flow of the plating solution, continuous
with an upward flow of the plating solution flowing along a surface
of each substrate W, is formed around the periphery of the
substrate W, as shown in FIG. 39. A flow of the plating solution,
flowing in a direction away from a lower guide plate 450, is
created in the vicinity of the lowest portion of the lower guide
plate 450 by collision of the plating solution with the lower guide
plate 450, whereas a flow of the plating solution, flowing in a
direction closer to an upper guide plate 452, is created in the
vicinity of the highest portion of the upper guide plate 452. Such
flows of the plating solution, however, do not affect the flow of
the plating solution flowing along the periphery of each substrate
W.
[0238] Thus, by forming a flow of the plating solution, which is
continuous with the flow of the plating solution flowing along a
surface of each substrate W, in the vicinity of the periphery of
the substrate W, it becomes possible to prevent the occurrence of
flow turbulence in the plating solution in the vicinity of the
periphery of each substrate W. This can enhance the in-plane
uniformity of the thickness and the shape of a plated film formed
on each substrate W.
[0239] According to the Ni plating tank 380, substrates W, held in
a vertical position by the substrate holder 384, are immersed in an
Ni plating solution, e.g., at 80.degree. C. in the Ni plating tank
380, e.g., for 50 minutes to form an Ni plated film 47, as shown in
FIG. 7B.
[0240] The pump 426 is driven during the plating to create an
upward flow of the plating solution in the Ni plating tank 380, as
shown in FIG. 39. As described above, a flow of the plating
solution, continuous with an upward flow of the plating solution
flowing along a surface of each substrate W, is formed around the
periphery of each substrate W which is substantially surrounded by
the lower guide plate 450 and the upper guide plate 452. The Ni
plated film 47, formed on the surface of each substrate W, can
therefore have enhanced in-plane uniformity of the thickness and
the shape.
[0241] As shown in FIGS. 40 and 41, it is possible to fix the lower
guide plates 450 to the lower inner surface of the inner tank 420
of the Ni plating tank 380. Thus, when substrates W held by the
substrate holder 384 are immersed in a plating solution in the Ni
plating tank 380, the periphery of the lower half of each substrate
W is surrounded by each lower guide plates 450 secured to the inner
tank 420 of the Ni plating tank 380.
[0242] As shown in FIGS. 42 and 43, the peripheries of substrates
W, held by the substrate holder 384 and immersed in a plating
solution in the plating tank 380, may be surrounded by a lower
grid-like guide plate structure 456, comprised of lower guide
plates 450 connected by a plurality of connecting plates 454 each
connecting two adjacent lower guide plates 450 and extending
linearly and vertically, and an upper grid-like guide plate
structure 458, comprised of upper guide plates 452 connected by a
plurality of connecting plates (not shown) each connecting two
adjacent upper guide plates 452 and extending linearly and
vertically.
[0243] When the peripheries of substrates W, held by the substrate
holder 384 and immersed in a plating solution in the plating tank
380, are surrounded by the lower grid-like guide plate structure
456 and the upper grid-like guide plate structure 458, grid-like
flow passages are formed in positions lateral to and on opposite
sides of the substrates W, as shown in FIG. 44. This can prevent
the occurrence of flow turbulence in the plating solution flowing
upwardly at the sides of the substrates W. Furthermore, the use of
the lower guide plate structure 456 has the advantage that the
strength and the stability of the lower guide plates 450 can be
increased by reinforcing them with the connecting plates 454. The
same holds true for the upper guide plate structure 458.
[0244] The same construction as described above with reference to
the Ni plating tank 380 may be employed also for the Au plating
apparatus 72 shown in FIG. 8 or for the Au plating apparatus 268
shown in FIGS. 17 through 23.
[0245] While the present invention has been described with
reference to preferred embodiments, it is understood that the
present invention is not limited to the embodiments described
above, but is capable of various changes and modifications within
the scope of the inventive concept as expressed herein.
* * * * *