U.S. patent application number 14/996673 was filed with the patent office on 2016-05-12 for lead wire for solar cell, manufacturing method and storage method thereof, and solar cell.
The applicant listed for this patent is Hitachi Metals, Ltd.. Invention is credited to Hiroyuki AKUTSU, Hiroshi BANDO, Yuju ENDO, Iku HIGASHIDANI, Hiromitsu KURODA, Hajime NISHI, Hiroshi OKIKAWA, Katsunori SAWAHATA, Ken TAKAHASHI.
Application Number | 20160133760 14/996673 |
Document ID | / |
Family ID | 42225671 |
Filed Date | 2016-05-12 |
United States Patent
Application |
20160133760 |
Kind Code |
A1 |
NISHI; Hajime ; et
al. |
May 12, 2016 |
LEAD WIRE FOR SOLAR CELL, MANUFACTURING METHOD AND STORAGE METHOD
THEREOF, AND SOLAR CELL
Abstract
A solar cell lead wire includes a molten solder plated layer on
a strip-shaped conductive material. The thickness of the oxide film
on a surface to the molten solder plate layer is suppressed to be
not more than 7 nm.
Inventors: |
NISHI; Hajime; (Hitachi,
JP) ; ENDO; Yuju; (Hitachi, JP) ; TAKAHASHI;
Ken; (Mito, JP) ; KURODA; Hiromitsu; (Hitachi,
JP) ; AKUTSU; Hiroyuki; (Hitachi, JP) ;
SAWAHATA; Katsunori; (Hitachi, JP) ; BANDO;
Hiroshi; (Hitachi, JP) ; HIGASHIDANI; Iku;
(Hitachi, JP) ; OKIKAWA; Hiroshi; (Hitachi,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Hitachi Metals, Ltd. |
Tokyo |
|
JP |
|
|
Family ID: |
42225671 |
Appl. No.: |
14/996673 |
Filed: |
January 15, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
12998727 |
May 25, 2011 |
9279176 |
|
|
PCT/JP2009/069726 |
Nov 20, 2009 |
|
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14996673 |
|
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Current U.S.
Class: |
136/256 |
Current CPC
Class: |
C23C 28/321 20130101;
C23C 26/02 20130101; C23C 2/02 20130101; C23C 28/345 20130101; H01L
31/02013 20130101; H01L 31/0508 20130101; C23C 6/00 20130101; C23C
28/322 20130101; Y02E 10/50 20130101; H01L 31/0512 20130101; C23C
2/08 20130101 |
International
Class: |
H01L 31/02 20060101
H01L031/02 |
Foreign Application Data
Date |
Code |
Application Number |
Nov 27, 2008 |
JP |
2008-302501 |
Oct 7, 2009 |
JP |
2009-233758 |
Claims
1. A solar cell lead wire comprising a molten solder plated layer
on a strip-shaped conductive material, wherein a thickness of an
oxide film on a surface to the molten solder plate layer is
suppressed to be not more than 7 nm.
2. A solar cell lead wire comprising a molten solder plated layer
on a strip-shaped conductive material, wherein the solar cell lead
wire is packaged in an Al bag, and wherein a thickness of an oxide
film on a surface of the molten solder plate layer is suppressed to
be not more than 7 nm.
Description
REFERENCE TO RELATED APPLICATIONS
[0001] The Present Application is a Continuation Application of
U.S. patent application Ser. No. 12/998,727, filed on May 25, 2011,
now U.S. patent No. tbd.
TECHNICAL FIELD
[0002] The present invention relates to a solar cell lead wire and,
in particular, a solar cell lead wire having an excellent
bondability to a cell, a manufacturing method and a storage method
of the solar cell lead wire, and a solar cell. This application is
based on Japanese Patent Application No. 2008-302501 filed on Nov.
27, 2008, and Japanese Patent Application No. 2009-233758 filed on
Oct. 7, 2009, the entire contents of which are herein incorporated
by reference.
BACKGROUND ART
[0003] In a solar cell, a polycrystalline or single crystal Si cell
is used as a semiconductor substrate.
[0004] A configuration of a conventional solar cell will be
described based on a solar cell 50 of the present invention shown
in FIGS. 4A and 4B. The solar cell 50 is manufactured by bonding
solar cell lead wires 10a and 10b to a predetermined region of a
semiconductor substrate 52, i.e., to a front surface electrode 54
provided on a front surface of the semiconductor substrate 52 and
to a back surface electrode 54 provided on a back surface thereof,
using a solder. Electricity generated in the semiconductor
substrate 52 is transmitted to the outside through the solar cell
lead wire.
[0005] A configuration of a conventional solar cell lead wire will
be described based on a solar cell lead wire 10 of the present
invention shown in FIGS. 1A and 1B. A solar cell lead wire 10 is
provided with a strip-shaped conductive material 12 and a molten
solder plated layer 13 formed on upper and lower surfaces of the
strip-shaped conductive material 12. The strip-shaped conductive
material 12 is, e.g., a circular cross-section conductor
roll-processed into a strip shape, which is called a flat conductor
or a flat wire.
[0006] The molten solder plated layer 13 is formed by supplying a
molten solder on the upper and lower surfaces of the strip-shaped
conductive material 12 using a hot-dip coating method.
[0007] The hot-dip coating method is a method in which the upper
and lower surfaces of the strip-shaped conductive material 12 are
cleaned by acid pickling, etc., and a solder is laminated on the
upper and lower surfaces 12a and 12b of the strip-shaped conductive
material 12 by passing the strip-shaped conductive material 12
through a molten solder bath. As shown in FIG. 1A, the molten
solder plated layer 13 is formed in a shape bulging from a side
portion in a width direction to a center portion, so-called a
mountain-like shape, by an effect of surface tension at the time of
solidification of the molten solder adhered on the upper and lower
surfaces 12a and 12b of the strip-shaped conductive material
12.
[0008] The solar cell lead wire 10 is cut to a predetermined
length, is sucked up by air suction and moved onto a front surface
electrode (grid) 54 of the semiconductor substrate 52, and is
soldered to the front surface electrode 54 of the semiconductor
substrate 52. An electrode band (finger) (not shown) electrically
conducting with the front surface electrode 54 is preliminarily
formed on the front surface electrode 54. The molten solder plated
layer 13 of the solar cell lead wire 10a is brought in contact with
the front surface electrode 54, and soldering is carried out in
this state. The soldering of the solar cell lead wire 10b to the
back surface electrode 55 of the semiconductor substrate 52 is
carried out in the same way.
[0009] Conventionally, the front surface electrode 54 is
impregnated with solder of the same nature as the molten solder
plated layer 13 of the solar cell lead wire 10 in order to impart
good solder bondability (or soldering strength) between the front
surface electrode 54 of the semiconductor substrate 52 and the
solar cell lead wire 10. However, the semiconductor substrate 52
has become thinner in recent years and a problem of damage to the
semiconductor substrate 52 at the time of impregnating the front
surface electrode 54 with the solder has emerged. Therefore,
omission of solder impregnation process performed on the front
surface electrode 54 has been promoted in order to avoid damage to
the semiconductor substrate 52.
[0010] Due to the omission of solder impregnation process which is
performed to impart good solder bondability between the front
surface electrode 54 of the semiconductor substrate 52 and the
solar cell lead wire 10, the case in which sufficient bondability
is not obtain is often seen even in the case of using a solar cell
lead wire which conventionally has no problem of bondability. The
semiconductor substrate 52 is bonded to the solar cell lead wire 10
by a formation of an intermetallic compound (e.g., Ag.sub.3Sn)
between an electrode material of the front surface electrode 54
(e.g., Ag) and a bonding material of the molten solder plated layer
13 (e.g., Sn). This bonding requires that a metal atom of the
solder (Sn) directly collides with a metal atom of the electrode
(Ag) after an oxide film is removed from a surface of the molten
solder plated layer 13 and from a surface of the front surface
electrode 54 due to flux effect, and that diffusion of an Sn atom
present in the solder into a lattice of another atom (Ag) is
enhanced by heating. That is, when the oxide film on the surface of
the molten solder plated layer 13 is very thick, the removal of the
oxide film by flux is not sufficient and a soldering defect
occurs.
[0011] Since the bonding between the semiconductor substrate 52 and
the solar cell lead wire 10 becomes insufficient when the soldering
failure occurs between the front surface electrode 54 and the solar
cell lead wire 10, a module output decreases due to mechanical
removal or conductivity failure.
[0012] The patent document 1 suggests a method in which 0.002 to
0.015 mass % of P is added to solder in order to suppress
generation of an oxide film on the solder surface during
manufacture or in use.
[0013] In the solar cell lead wire of the patent document 1, the
oxide film has a thickness of about 1 to 2 .mu.m without
discoloration up to a heating temperature of 300.degree. C., and
the oxide film has a thickness of about 5 .mu.m with slight
discoloration only after reaching 350.degree. C. On the other hand,
it is described that the oxide film already has a thickness of more
than 6 .mu.m with significant discoloration at 250.degree. C. in
the prior art. Further, the patent document 1 describes that both
the invention and the prior art have an oxide film with a thickness
of about 1 .mu.m in the case without heating.
PRIOR ART DOCUMENT
Patent Document
[0014] [Patent document 1] Japanese patent Laid-Open No.
2002-263880
SUMMARY OF THE INVENTION
Problems to be Solved by the Invention
[0015] As described above, the thickness of the oxide film on the
surface of the molten solder plated layer 13 should be thinned in
order to firmly bond the solar cell lead wire to the semiconductor
substrate. However, according to the patent document 1, the oxide
film of the invention already has a thickness of about 1 .mu.m
(1000 nm) even in a state before heating. Therefore, it is not
sufficient to obtain strong bondability between the semiconductor
substrate, for which the solder impregnation process on the front
surface electrode is omitted, and the solar cell lead wire.
[0016] Therefore, it is an object of the present invention to solve
the above-mentioned problem and to provide a solar cell lead wire
having excellent bondability with a cell, a manufacturing method
and a storage method thereof, and a solar cell.
Means for Solving the Problems
[0017] In order to achieve the above-mentioned object, a feature of
the present invention is a solar cell lead wire comprising a molten
solder plated layer on a strip-shaped conductive material formed
rectangular in a cross section thereof so as to be bonded to a
solar cell, wherein a thickness of an oxide film on a surface of
the molten solder plated layer is not more than 7 nm.
[0018] In the above-mentioned solar cell lead wire, the
strip-shaped conductive material may be a flat wire having a volume
resistivity of not more than 50 .mu..OMEGA.mm.
[0019] In the above-mentioned solar cell lead wire, the
strip-shaped conductive material may comprise any one of Cu, Al, Ag
and Au.
[0020] In the above-mentioned solar cell lead wire, the
strip-shaped conductive material may comprise any one of tough
pitch Cu, low-oxygen Cu, oxygen-free Cu, phosphorus deoxidized Cu
and high purity Cu having a purity of not less than 99.9999%.
[0021] In the above-mentioned solar cell lead wire, the molten
solder plated layer may comprise a Sn-based solder, or, a Sn-based
solder alloy using Sn as a first component and containing not less
than 0.1 mass % of at least one element selected from the group
consisting of Pb, In, Bi, Sb, Ag, Zn, Ni and Cu as a second
component.
[0022] Another feature of the present invention is a method of
manufacturing a solar cell lead wire comprising forming a
strip-shaped conductive material by roll-processing or
slit-processing a wire, heat-treating the strip-shaped conductive
material in a continuous electrical heating or continuous heating
furnace or a batch heating equipment, and when subsequently
performing solder plating on the strip-shaped conductive material
by supplying a molten solder, adjusting a plating temperature
thereof to not more than a liquidus-line temperature of the solder
plus 120.degree. C.
[0023] In the above-mentioned method of manufacturing a solar cell
lead wire, solder plating may be performed on the strip-shaped
conductive material by supplying a molten solder at a plating
operating atmospheric temperature of not more than 30.degree. C.
and at a relative humidity of not more than 65% of the plating
operating atmosphere.
[0024] Still another feature of the present invention is a storage
method of a solar cell lead wire, comprising storing the
above-mentioned solar cell lead wire after packing with a packing
material having an oxygen permeability of not more than 1
mL/m.sup.2dayMPa and a water vapor permeability of not more than
0.1 g/m.sup.2day.
[0025] In the above-mentioned storage method of a solar cell lead
wire, the above-mentioned solar cell lead wire may be stored at a
temperature of not more than 30.degree. C. and at a relative
humidity of not more than 65% in an unpacked state or in a state
that the packing is opened.
[0026] Still another feature of the present invention is a solar
cell comprising the above-mentioned solar cell lead wire that is
soldered to front and back surface electrodes of a semiconductor
substrate by using a solder in a molten solder plated layer
thereof.
Effect of the Invention
[0027] According to the present invention, it is possible to obtain
a solar cell lead wire having excellent bondability with a
cell.
BRIEF DESCRIPTION OF THE DRAWINGS
[0028] FIG. 1A is a transverse sectional view showing a solar cell
lead wire in a preferred embodiment of the present invention.
[0029] FIG. 1B is a perspective view showing a strip-shaped
conductive material which is one of the raw materials for the solar
cell lead wire of FIG. 1A.
[0030] FIG. 2 is a transverse sectional view showing a solar cell
lead wire in another preferred embodiment of the present
invention.
[0031] FIG. 3 is a schematic view showing a hot-dip plating
equipment for forming a molten solder plated layer in the present
embodiment.
[0032] FIG. 4A is a transverse sectional view showing a solar cell
in which the solar cell lead wire shown in FIG. 1A is used.
[0033] FIG. 4B is a top view showing the solar cell shown in FIG.
4A in which the solar cell lead wire is used.
[0034] FIG. 5 is a top view showing an example of a solar cell
module using the solar cell shown in FIG. 4.
MODE FOR CARRYING OUT THE INVENTION
[0035] A preferred embodiment of the present invention will be
explained in detail as below in conjunction with appended
drawings.
[0036] As shown in FIG. 1, a solar cell lead wire 10 of the present
invention is formed by supplying a molten solder on upper and lower
surfaces of the strip-shaped conductive material 12 and being
plated at an outlet port of a solder bath.
[0037] A wire (a wire rod having a circular cross section) is
roll-processed and is heat-treated in a continuous electrical
heating furnace or a batch-type heating equipment, thereby forming
the strip-shaped conductive material 12.
[0038] FIG. 1B shows a perspective view of the strip-shaped
conductive material 12, in which an upper surface 12a and a lower
surface 12b are formed to be flat surfaces, a side surface 12c is
formed to be convexly bulged shape and an edge surface 12d is
formed by cutting to an appropriate length.
[0039] FIG. 3 shows a hot-dip solder plating equipment.
[0040] A hot-dip plating equipment 41 is provided with a solder
bath 43 for storing molten solder (plating molten solder) 42 formed
of molten solder S, an upstream guide roller 44 provided in the
molten solder 42 to guide the strip-shaped conductive material 12
fed from a feeder into the molten solder 42, and a downstream guide
roller 45 provided downstream of the solder bath 43 to guide the
solar cell lead wire 10, which is made by passing the molten solder
42 and the upstream guide roller 44, to a winder.
[0041] Here, the temperature of the molten solder 43 needs to be
set to higher than the melting point of the solder used, however,
Sn in the solder is easily diffused in the molten state and is
bonded to oxygen in the air, and thus, oxide film generation is
remarkably enhanced. In addition, an operating atmospheric
temperature and a level of humidity also contribute to promote
oxide film generation. Therefore, it is desirable that the
temperature of the molten solder be below the liquidus-line
temperature of the solder used plus 120.degree. C. (the lower limit
is the liquidus-line temperature plus 50.degree. C.), the plating
operating atmospheric temperature be 30.degree. C. or less (the
lower limit is 10.degree. C.), and relative humidity in the plating
operating atmosphere be 65% or less (the lower limit is 10%).
[0042] By the above-mentioned manufacturing method, it is possible
to manufacture a solar cell lead wire in which an oxide film on a
surface of solder plated layer has a thickness of 3.0 nm or less
(the lower limit is 0.5 nm).
[0043] In addition, even when the manufactured solar cell lead wire
is packed with a packing material having an oxygen permeability of
1 mL/m.sup.2dayMPa or less and a water vapor permeability of 0.1
g/m.sup.2day or less, or is unpacked, or is in a state that the
packing is opened, it is possible to suppress thickness growth of
the oxide film to 7 nm or less (the lower limit is 0.5 nm) under
the storage conditions of a temperature of 30.degree. C. or less
(the lower limit is 10.degree. C.) and 65% or less relative
humidity (the lower limit is 10%).
[0044] As described above, the solar cell lead wire 10 of the
present invention has an oxide film of 7 nm or less in thickness on
the surface of the molten solder plated layer 13 so that the
bonding to the front and back surface electrodes of the
semiconductor substrate is strong. This facilitates removal of the
oxide film at the time of solder bonding and allows the solar cell
lead wire 10 to be firmly soldered to the front and back surface
electrodes. That is, it is possible to prevent a decrease in module
output caused by mechanical removal or conductivity failure.
[0045] For the strip-shaped conductive material 12, for example, a
flat wire having a volume resistivity of 50 .mu..OMEGA.mm or less
is used.
[0046] By roll-processing the flat wire, it is possible to obtain
the strip-shaped conductive material 12 having a horizontal
cross-sectional shape as shown in FIG. 1B, or the strip-shaped
conductive material 12 can be obtained by slit-processing.
[0047] The strip-shaped conductive material 12 is formed of any one
of Cu, Al, Ag and Au, or any one of tough pitch Cu, low-oxygen Cu,
oxygen-free Cu, phosphorus deoxidized Cu and high purity Cu having
a purity of 99.9999% or more.
[0048] As the molten solder plated layer, a Sn-based solder (a
Sn-based solder alloy) is used. In the Sn-based solder, Sn is used
as a first component which has the heaviest component weight, and
0.1 mass % or more of at least one element selected from the group
consisting of Pb, In, Bi, Sb, Ag, Zn, Ni and Cu is contained as a
second component.
[0049] The effect of the present embodiment will be explained
below.
[0050] For soldering the solar cell lead wire 10 shown in FIG. 1A
to the front surface electrode 54 and the back surface electrode 55
of the semiconductor substrate 52 shown in FIG. 4, a heating
temperature of the solar cell lead wire 10 or the semiconductor
substrate 52 is controlled to a temperature near the melting point
of the solder in the molten solder plated layer 13. The reason is
that a thermal expansion coefficient of the strip-shaped conductive
material 12 of the solar cell lead wire 10 (e.g., copper) is
largely different from that of the semiconductor substrate 52 (Si).
Heat stress which causes generation of crack on the semiconductor
substrate 52 is generated due to the difference in the thermal
expansion coefficient. Low temperature bonding should be performed
in order to decrease the heat stress. Thus, the heating temperature
of the solar cell lead wire 10 or the semiconductor substrate 52 is
controlled to a temperature near the melting point of the solder in
the molten solder plated layer 13.
[0051] In the above-mentioned heating method during the bonding,
the semiconductor substrate 52 is placed on a hot plate, and heat
from the hot plate is used together with heat from upside of the
solar cell lead wire 10 placed on the semiconductor substrate
52.
[0052] In order to increase the contact area of the front surface
electrode 54 and the back surface electrode 55 of the semiconductor
substrate 52 with the molten solder plated layer 13 for obtaining
sufficient heat conduction from the semiconductor substrate 52 to
the molten solder plated layer 13, the solar cell lead wire 10
including the molten solder plated layer 13 should be formed in a
rectangular shape.
[0053] However, since the oxide film on the surface of the molten
solder plated layer is thick in the conventional solar cell lead
wire, oxide film removal by flux used at the time of solder bonding
to the front surface electrode 54 is insufficient, which causes a
soldering defect, and as a result, problems arise such that
mechanical removal occurs or that sufficient output is not obtained
due to conductivity failure.
[0054] Since the oxide film on the surface of the molten solder
plated layer 13 to be the upper and lower surfaces of the solar
cell lead wire 10 in the present embodiment has a thickness of 7 nm
or less, the oxide film removal by flux is facilitated and
soldering reliability is satisfactory, hence, the above-mentioned
conventional problem can be solved.
[0055] Here, the oxide film thickness can be defined by time of
decreasing to half of the oxidation peak value in a depth profile
obtained by Auger analysis.
[0056] Next, Table 1 shows physicality of the material of the
strip-shaped conductive material used in the present invention.
TABLE-US-00001 TABLE 1 Material Cu Ag Au Al Thermal expansion
coefficient (.times.10.sup.-6/.degree. C.) 17.0 19.0 29.1 23.5 0.2%
proof stress (MPa) 40 55 30 20 Volume resistivity(.mu..OMEGA. mm)
16.9 16.3 22.0 26.7
[0057] The strip-shaped conductive material 12 is preferably a
material having relatively small volume resistivity, which is 50
.mu..OMEGA.mm or less. Such a material includes Cu, Al, Ag and Au,
etc., as shown in Table 1.
[0058] The volume resistivity of the Ag is the lowest among Cu, Al,
Ag and Au. Therefore, when Ag is used as the strip-shaped
conductive material 12, it is possible to maximize power generation
efficiency of a solar cell using the solar cell lead wire 10. When
Cu is used as the strip-shaped conductive material, it is possible
to reduce cost of the solar cell lead wire. When Al is used as the
strip-shaped conductive material, it is possible to reduce weight
of the solar cell lead wire 10.
[0059] When Cu is used as the strip-shaped conductive material, any
one of tough pitch Cu, low-oxygen Cu, oxygen-free Cu, phosphorus
deoxidized Cu and high purity Cu having a purity of 99.9999% or
more may be used for the Cu. In order to minimize the 0.2% proof
stress of the strip-shaped conductive material, it is advantageous
to use highly-pure Cu. Therefore, when the high purity Cu having a
purity of 99.9999% or more is used, it is possible to decrease the
0.2% proof stress of the strip-shaped conductive material. When the
tough pitch Cu or the phosphorus deoxidized Cu is used as the
strip-shaped conductive material 12, it is possible to reduce cost
of the solar cell lead wire.
[0060] A solder used for the molten solder plated layer includes a
Sn-based solder, or a Sn-based solder alloy in which Sn is used as
a first component and 0.1 mass % or more of at least one element
selected from the group consisting of Pb, In, Bi, Sb, Ag, Zn, Ni
and Cu is contained as a second component.
[0061] These solders may contain 1000 ppm or less of trace element
as a third component.
[0062] Next, a method of manufacturing the solar cell lead wire of
the present invention will be explained.
[0063] Firstly, a strip-shaped conductive material is formed by
roll-processing a wire rod having a circular cross section (shot
shown) which is a row material, or by slit-processing a plate. The
strip-shaped conductive material is heat-treated in a continuous
electrical heating furnace, a continuous heating furnace or a
batch-type heating equipment. Then, a molten solder plated layer is
formed by supplying a molten solder using a plating line such as
shown in FIG. 3.
[0064] Here, the temperature of the molten solder needs to be set
to higher than the melting point of the solder used, however, Sn in
the solder is easily diffused in the molten state and is bonded to
oxygen in the air, and thus, oxide film generation is remarkably
enhanced. In addition, a manufacturing atmospheric temperature and
a level of humidity also contribute to promote oxide film
generation. Therefore, it is desirable that the temperature of the
molten solder be below the liquidus-line temperature of the solder
used plus 120.degree. C., the plating operating atmospheric
temperature be 30.degree. C. or less and relative humidity in the
plating operating atmosphere be 65% or less. In this regard, the
temperature of the molten solder indicates a value measured by a
contact-type thermometer at a position within 5 cm from the inlet
or outlet port to let the strip-shaped conductive material into or
out from the molten solder, and the plating operating atmospheric
temperature and the relative humidity indicate values measured at 5
m from a plating line.
[0065] By the above-mentioned manufacturing method, it is possible
to manufacture a solar cell lead wire in which an oxide film on a
surface of solder plated layer has a thickness of 3.0 nm or less.
The oxide film thickness shown here is an average value of the data
obtained by performing Auger analysis at 5 points on the
solder-plated surface (the upper or lower surface). Meanwhile, by
SERA (Sequential Electrochemical Reduction Analysis), it is
possible to confirm that the component of the oxide film shown here
is an oxide of tin (Sn) (SnO: tin oxide (II), SnO.sup.2: tin oxide
(IV)). The oxide film thickness obtained by the SERA analysis,
which is SnO film thickness plus SnO.sup.2 film thickness, is
substantially equivalent to the oxide film thickness obtained by
the Auger analysis.
[0066] In addition, even when the manufactured solar cell lead wire
is packed with a packing material having an oxygen permeability of
1 mL/m.sup.2dayMPa or less and a water vapor permeability of 0.1
g/m.sup.2day or less, or is unpacked, or is in a state that the
packing is opened, it is possible to suppress thickness growth of
the oxide film to 7 nm or less under the storage conditions of a
temperature of 30.degree. C. or less and 65% or less relative
humidity.
[0067] As a processing method for processing a raw material into a
strip-shaped conductive material, both a rolling process and a slit
processing are applicable. The rolling process is a method to form
a round wire into a rectangle by rolling. When the strip-shaped
conductive material is formed by the rolling process, it is
possible to form a long strip-shaped conductive material having a
uniform width in a longitudinal direction. Materials having various
widths can be dealt by the slit processing. In other words, even
when a width of a raw conductive material is not uniform in a
longitudinal direction or even when various raw conductive
materials having different widths are used, it is possible to form
a long strip-shaped conductive material having a uniform width in a
longitudinal direction by the slit processing.
[0068] It is possible to improve softening characteristics of the
strip-shaped conductive material by heat treating the strip-shaped
conductive material. Improving the softening characteristics of the
strip-shaped conductive material is advantageous to reduce the 0.2%
proof stress. A heat treatment method includes, e.g., continuous
electrical heating, continuous heating and batch-type heating. The
continuous electrical heating and the continuous heating are
preferable for continuously heat treating over a long length. When
stable heat treatment is required, the batch-type heating is
preferable. From the point of view of preventing oxidation, it is
preferable to use a furnace with an inert gas atmosphere such as
nitrogen, etc., or a hydrogen reduction atmosphere.
[0069] The furnace with an inert gas atmosphere or with a hydrogen
reduction atmosphere is provided by the continuous electrical
heating furnace, the continuous heating furnace or the batch-type
heating equipment.
[0070] Meanwhile, in the solar cell lead wire 10 of the present
invention, upper and lower molten solder plated layers 13 are
formed flat as shown in FIG. 2 by supplying the molten solder on
the upper and lower surfaces of the strip-shaped conductive
material 12 and sandwiching the plated strip-shaped conductive
material 12 at an outlet port of a solder bath to adjust the
plating thickness. Here, "flat" indicates that asperity on the
plated surface has a height of 3 .mu.m or less. In addition, the
oxide film formed on the surface of the molten solder plated layer
13 is formed in the same manner as explained with reference to
FIGS. 1A and 1B.
[0071] A wire (a wire rod having a circular cross section) is
roll-processed and is heat-treated in a continuous electrical
heating furnace, a continuous heating furnace or a batch-type
heating equipment, thereby forming the strip-shaped conductive
material 12.
[0072] This configuration suppress an amount of solder to be
supplied when the conductor width of the strip-shaped conductive
material 12 shown in FIG. 2 is equivalent to an electrode width,
i.e., the shape in FIG. 2 prevents solder used for bonding the
strip-shaped conductive material to the semiconductor substrate
from being excessively supplied to a bonding portion of the front
or back surface electrode and from flowing out to a portion other
than the electrodes, thereby preventing a cell light-receiving
surface from diminishing. As a result, it is possible to obtain the
solar cell lead wire 10 excellent in shadow loss suppression.
[0073] In addition, it is possible to place the strip-shaped
conductive material on the front and back surface electrodes in an
orderly manner, which allows strong solder-bondability. Then, since
the plated layer is flat, adhesion to an air suction jig is high
and it is less likely to fall off when being moved. Furthermore,
the flat plated layer facilitates to obtain a stable laminated
state at the time of winding around a bobbin, and deformation of
the winding is less likely to occur. Therefore, the problem, in
which a lead wire is tangled due to the deformation of the winding
and is not pulled out, is solved.
[0074] Next, a solar cell of the present invention will be
explained in detail.
[0075] As shown in FIGS. 4A and 4B, in a solar cell 50 of the
present invention, the solar cell lead wires 10 which have been
described above are soldered to the front surface electrode 54 and
the back surface electrode 55 of the semiconductor substrate 52 by
the solder in the molten solder plated layer 13 in which the oxide
film on the plated surface has a thickness of 7 nm or less. For the
solar cell 50, solder impregnation of the front surface electrode
54 and the back surface electrode 55 of the semiconductor substrate
52 is not necessary since the solar cell lead wire 10 having a
solder plated layer in which an oxide film on the plated surface
has a thickness of 7 nm or less is used. Therefore, it is possible
to avoid damage caused by performing the solder impregnation of an
electrode of a thinned semiconductor substrate. In this regard,
however, the solar cell lead wire 10 of the present invention is
applicable to a semiconductor substrate of the type in which an
electrode is impregnated with solder, and the application thereof
is not limited to a semiconductor substrate of the type in which an
electrode is not impregnated with solder.
[0076] In the present invention, the oxide film on the surface of
the molten solder plated layer 13 as a bonded surface between the
solar cell lead wire 10 and the front surface electrode 54 as well
as the back surface electrode 55 is very thin such as 7 nm or less.
Therefore, the oxide film is easily broken by flux effect at the
time of solder bonding to the front surface electrode 54 and the
back surface electrode 55 of the semiconductor substrate 52 and
satisfactory solder wettability is obtained, which makes the solder
bonding of the molten solder plated layer 13 to the front surface
electrode 54 and the back surface electrode 55 strong. In other
words, the joint with high bonding strength is obtained between the
solar cell lead wire 10 and the semiconductor substrate 52.
[0077] In the solar cell 50 of the present invention, since the
bonding strength between the solar cell lead wire 10 and the
semiconductor substrate 52 is high, it is possible to improve a
manufacturing yield and module output of the solar cell module.
[0078] Meanwhile, the solar cell 50 is used for a solar cell module
51 which is formed by, e.g., horizontally and vertically arraying
and arranging plural solar cells 50 as shown in FIG. 5. In this
case, for example, a solar cell lead wire 10 bonded to a front
surface electrode 54f of one solar cell 50 is linearly
solder-connected to a solar cell lead wire 10 bonded to a front
surface electrode 54f of another solar cell 50, thereby
electrically connecting between vertically adjacent cells.
[0079] The solar cell lead wire 10 bonded to the front surface
electrode 54f of the one solar cell 50 may be solder-connected to a
solar cell lead wire bonded to a back surface electrode of the
other solar cell 50 at a different level to electrically connect
between vertically adjacent cells.
EXAMPLES
Example 1
[0080] A Cu material as a raw conductive material was
roll-processed, thereby forming a strip-shaped conductive material
in a rectangular shape of 2.0 mm in width and 0.16 mm in thickness.
The strip-shaped conductive material was heat-treated in a
batch-type heating equipment, and further, Sn-3% Ag-0.5% Cu solder
plating (liquidus-line temperature of 220.degree. C.) was applied
on the peripheral surface of the strip-shaped conductive material
in the hot-dip plating equipment shown in FIG. 3 (at molten solder
temperature of 340.degree. C., workplace temperature of 30.degree.
C. and humidity in the workplace of 62 RH %), thereby forming a
molten solder plated layer (a plating thickness is 20 .mu.m at a
middle portion) on upper and lower surfaces of the strip-shaped
conductive material (a conductor is a heat-treated Cu). From the
above, the solar cell lead wire of FIG. 1A was obtained. After
that, oxide film thickness measurement (Auger analysis) and bonding
strength measurement were immediately conducted.
Examples 2, 3, 4 and 5
[0081] A strip-shaped conductive material was formed in the same
manner as the solar cell lead wire 10 of Example 1, was
heat-treated in a batch-type heating equipment, and further, Sn-3%
Ag-0.5% Cu solder plating (liquidus-line temperature of 220.degree.
C.) was applied on the peripheral surface of the strip-shaped
conductive material in the hot-dip plating equipment shown in FIG.
3 (at molten solder temperature of 340.degree. C., workplace
temperature of 30.degree. C. and humidity in the workplace of 65 RH
%), thereby forming a molten solder plated layer (a plating
thickness is 20 .mu.m at a middle portion) on upper and lower
surfaces of the strip-shaped conductive material (a conductor is a
heat-treated Cu). Furthermore, in Example 2, the manufactured solar
cell lead wire was not packed and was stored in a constant
temperature and humidity bath for 3 months under the conditions of
30.degree. C..times.65 RH %, and then, the oxide film thickness
measurement (Auger analysis) and the bonding strength measurement
were conducted. In Examples 3 to 5, the manufactured solar cell
lead wire was packed in a degassed Al-bag (12 .mu.m of antistatic
PET/9 .mu.m of Al foil/15 .mu.m of nylon/50 .mu.m of antistatic
LLDPE, oxygen permeability of 1 mL/m.sup.2dayMPa and a water vapor
permeability of 0.1 g/m.sup.2day) and was stored in a constant
temperature and humidity bath for 3 months under the conditions of
60.degree. C..times.95 RH % in Example 3, the conditions of
70.degree. C..times.95 RH % in Example 4 and the conditions of
80.degree. C..times.95 RH % in Example 5, and then, the oxide film
thickness measurement (Auger analysis) and the bonding strength
measurement were conducted.
Examples 6 and 7
[0082] A strip-shaped conductive material was formed in the same
manner as the solar cell lead wire 10 of Example 1, was
heat-treated in a batch-type heating equipment, and further, Sn-3%
Ag-0.5% Cu solder plating (liquidus-line temperature of 220.degree.
C.) was applied on the peripheral surface of the strip-shaped
conductive material in the hot-dip plating equipment shown in FIG.
3 (at molten solder temperature of 340.degree. C., workplace
temperature of 20.degree. C. and humidity in the workplace of 50 RH
% in Example 6, and at molten solder temperature of 340.degree. C.,
workplace temperature of 30.degree. C. and humidity in the
workplace of 65 RH % in Example 7), thereby forming a molten solder
plated layer (a plating thickness is 20 .mu.m at a middle portion)
on upper and lower surfaces of the strip-shaped conductive material
(a conductor is a heat-treated Cu). Furthermore, in Example 6,
after making the solar cell lead wire, the oxide film thickness
measurement (Auger analysis) and the bonding strength measurement
were immediately conducted. In Example 7, the manufactured solar
cell lead wire was packed in a degassed Al-bag(12 .mu.m of
antistatic PET/9 .mu.m of Al foil/15 .mu.m of nylon/50 .mu.m of
antistatic LLDPE, oxygen permeability of 1 mL/m.sup.2dayMPa and a
water vapor permeability of 0.1 g/m.sup.2day) and was stored in a
constant temperature and humidity bath for 3 months under the
conditions of 85.degree. C..times.95 RH %, and then, the oxide film
thickness measurement (Auger analysis) and the bonding strength
measurement were conducted.
Comparative Example 1
[0083] A strip-shaped conductive material was formed in the same
manner as the solar cell lead wire 10 of Example 1, was
heat-treated in a batch-type heating equipment, and further, Sn-3%
Ag-0.5% Cu solder plating (liquidus-line temperature of 220.degree.
C.) was applied on the peripheral surface of the strip-shaped
conductive material in the hot-dip plating equipment shown in FIG.
3 (at molten solder temperature of 350.degree. C., workplace
temperature of 35.degree. C. and humidity in the workplace of 70 RH
%), thereby forming a molten solder plated layer (a plating
thickness is 20 .mu.m at a middle portion) on upper and lower
surfaces of the strip-shaped conductive material (a conductor is a
heat-treated Cu). After that, the oxide film thickness measurement
(Auger analysis) and the bonding strength measurement were
immediately conducted.
Comparative Examples 2 and 3
[0084] A strip-shaped conductive material was formed in the same
manner as the solar cell lead wire 10 of Example 1, was
heat-treated in a batch-type heating equipment, and further, Sn-3%
Ag-0.5% Cu solder plating (liquidus-line temperature of 220.degree.
C.) was applied on the peripheral surface of the strip-shaped
conductive material in the hot-dip plating equipment shown in FIG.
3 (at molten solder temperature of 340.degree. C., workplace
temperature of 30.degree. C. and humidity in the workplace of 65 RH
%), thereby forming a molten solder plated layer (a plating
thickness is 20 .mu.m at a middle portion) on upper and lower
surfaces of the strip-shaped conductive material (a conductor is a
heat-treated Cu). Furthermore, in Comparative Example 2, the
manufactured solar cell lead wire was not packed and was stored in
a constant temperature and humidity bath for 3 months under the
conditions of 60.degree. C..times.95 RH %, and then, the oxide film
thickness measurement (Auger analysis) and the bonding strength
measurement were conducted. In Comparative Example 3, the
manufactured solar cell lead wire was packed in a degassed
Al-deposited bag (12 .mu.m of Al-deposited PET/15 .mu.m of nylon/50
.mu.m of antistatic LLDPE, oxygen permeability of 10
mL/m.sup.2dayMPa and a water vapor permeability of 10 g/m.sup.2day)
and was stored in a constant temperature and humidity bath for 3
months under the conditions of 60.degree. C..times.95 RH %, and
then, the oxide film thickness measurement (Auger analysis) and the
bonding strength measurement were conducted.
[0085] From the results of the Auger analysis of the thickness of
the oxidation film on the surface of the solder plating of the
solar cell lead wire in these Examples 1, 2, 3, 4, 5, 6 and 7 and
Comparative Examples 1, 2 and 3, it was found that the thickness of
the oxidation film is thin which is 7 nm or less in all of Examples
1, 2, 3, 4 and 5 while the thickness of the oxidation film is thick
which is more than 7 nm in all of Comparative Examples 1, 2 and 3.
Here, the oxide film thickness is defined by time of decreasing to
half of the oxidation peak value in a depth profile (sputtering
time (sec) vs. composition ratio (at %)) obtained by Auger
analysis, and was calculated by the formula below.
Oxide film thickness (nm)=sputtering rate converted to SiO.sup.2
(nm/min).times.time of decreasing to half of the oxidation peak
value (min)
[0086] An adequate amount of rosin-based flux was applied to the
solar cell lead wires of these Examples 1, 2, 3, 4, 5, 6 and 7 and
Comparative Examples 1, 2 and 3, each solar cell lead wire was
placed on a copper plate and was heated by a hot plate (kept at
260.degree. C. for 30 minutes), and the solar cell lead wire was
soldered to a semiconductor substrate of 155 mm.times.155
mm.times.16 .mu.m having two bus bar electrodes (without pre-solder
impregnation of the electrode) as shown in FIGS. 4A and 4B.
Furthermore, in order to evaluate the bonding strength of these
solar cell lead wires, which are soldered to the semiconductor
substrate, with respect to the semiconductor substrate, 90.degree.
peeling test (testing speed: 10 mm/min, peeled length: 15 mm) was
conducted.
[0087] Evaluation results of Examples 1, 2, 3, 4, 5, 6 and 7 and
Comparative Examples 1, 2 and 3 are shown in Table 2.
TABLE-US-00002 TABLE 2 Examples Comparative Examples 1 2 3 4 5 6 7
1 2 3 Plating temperature 340.degree. C. 340.degree. C. 340.degree.
C. 340.degree. C. 340.degree. C. 340.degree. C. 340.degree. C.
340.degree. C. 340.degree. C. 340.degree. C. Workplace 30.degree.
C. 30.degree. C. 30.degree. C. 30.degree. C. 30.degree. C.
20.degree. C. 30.degree. C. 30.degree. C. 30.degree. C. 30.degree.
C. temperature Humidity in 65 RH % 65 RH % 65 RH % 65 RH % 65 RH %
50 RH % 65 RH % 70 RH % 65 RH % 65 RH % workplace Packing material
Not used Not used Al-bag Al-bag Al-bag Not used Al-bag Not used Not
used Al- deposited bag Storage temperature Not 30.degree. C.
60.degree. C. 70.degree. C. 80.degree. C. Not 85.degree. C. Not
60.degree. C. 60.degree. C. stored stored stored Storage humidity
Not 65 RH % 95 RH % 95 RH % 95 RH % Not 95 RH % Not 95 RH % 95 RH %
stored stored stored Oxidation film 3.0 nm 3.5 nm 3.8 nm 5.4 nm 6.7
nm 0.5 nm 7.0 nm 7.2 nm 10.1 nm 8.8 nm thickness Bonding strength
.largecircle. .largecircle. .largecircle. .largecircle.
.largecircle. .largecircle. .largecircle. X X X
[0088] In Table 2, the section of "Plating temperature" indicates
the temperature of the molten solder plating. The section of
"Workplace temperature" indicates the temperature of the workplace
where the plating operation was carried out. The section of
"Humidity in workplace" indicates the relative humidity of the
workplace where the plating operation was carried out. The section
of "Packing material" indicates a packing bag used for storing in a
constant temperature and humidity bath. The section of "Storage
temperature" indicates the temperature in the constant temperature
and humidity bath. The section of "Storage humidity" indicates the
relative humidity in the constant temperature and humidity bath.
The section of "Oxidation film thickness" indicates the thickness
of the oxide film on the surface of the solder plated layer derived
from a depth profile by Auger analysis (average value of n=5). The
section of "Bonding strength" indicates the results of the
90.degree. peeling test in which the copper plate and the solar
cell lead wire were pulled to test the extent of pull force by
which the bonding is peeled, and O (circle) indicates the pull
force of 10N or more and X (cross) indicates the pull force of less
than 10N.
[0089] From the results of the "bonding strength" evaluation shown
in Table 2, it was found that Examples 1, 2, 3, 4, 5, 6 and 7 in
which the oxide film has a thickness of 7 nm or less are excellent
in bonding strength while Comparative Examples 1, 2 and 3 in which
the oxide film has a thickness of more than 7 nm are poor in
bonding strength. As described above, from the evaluation results
of Examples 1, 2, 3, 4, 5, 6 and 7 and Comparative Examples 1, 2
and 3, it was confirmed that the solar cell lead wire 10 in the
present embodiment is excellent in bonding strength.
DESCRIPTION OF REFERENCE NUMERAL
[0090] 10 solar cell lead wire [0091] 12 strip-shaped conductive
material [0092] 13 molten solder plated layer
* * * * *