U.S. patent application number 14/862748 was filed with the patent office on 2016-03-31 for systems and methods of treating a substrate.
The applicant listed for this patent is Semes Co., Ltd.. Invention is credited to Hyung Joon KIM, Hyungchul MOON.
Application Number | 20160093473 14/862748 |
Document ID | / |
Family ID | 55582622 |
Filed Date | 2016-03-31 |
United States Patent
Application |
20160093473 |
Kind Code |
A1 |
MOON; Hyungchul ; et
al. |
March 31, 2016 |
SYSTEMS AND METHODS OF TREATING A SUBSTRATE
Abstract
Substrate treating systems are disclosed. The system may include
a chamber with a processing space, a supporting unit provided in
the processing space to support a substrate, a gas supplying unit
provided in the processing space to supply gas into the processing
space, a plasma source unit generating plasma from the gas, and a
liner unit disposed to enclose the supporting unit. The supporting
unit may include a supporting plate supporting a substrate. The
liner unit may include an inner liner enclosing the supporting
plate and an actuator vertically moving the inner liner.
Inventors: |
MOON; Hyungchul;
(Cheonan-si, KR) ; KIM; Hyung Joon;
(Pyeongtaek-si, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Semes Co., Ltd. |
Cheonan-si |
|
KR |
|
|
Family ID: |
55582622 |
Appl. No.: |
14/862748 |
Filed: |
September 23, 2015 |
Current U.S.
Class: |
216/58 ;
156/345.26; 156/345.33; 156/345.51 |
Current CPC
Class: |
H01J 37/32715 20130101;
H01J 37/32642 20130101; H01L 21/3065 20130101; H01J 37/3244
20130101; H01J 37/32862 20130101; H01L 21/32136 20130101; H01L
21/67069 20130101; H01J 37/32477 20130101; H01J 37/32449 20130101;
H01J 37/32009 20130101; H01J 37/32871 20130101 |
International
Class: |
H01J 37/32 20060101
H01J037/32 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 30, 2014 |
KR |
10-2014-0131914 |
Claims
1. A substrate treating system, comprising: a chamber with a
processing space; a supporting unit provided in the processing
space to support a substrate; a gas supplying unit provided in the
processing space to supply gas into the processing space; a plasma
source unit generating plasma from the gas; and a liner unit
disposed to enclose the supporting unit, wherein the supporting
unit comprises a supporting plate supporting a substrate, and the
liner unit comprises: an inner liner disposed to enclose the
supporting plate; and an actuator vertically moving the inner
liner.
2. The substrate treating system of claim 1, wherein the gas
supplying unit comprises: a main nozzle coupled to a wall of the
chamber to supply the gas into the processing space; and an
auxiliary nozzle provided on the inner liner to supply the gas into
the processing space.
3. The substrate treating system of claim 2, wherein the liner unit
further comprises an outer liner provided in the chamber and shaped
like a ring.
4. The substrate treating system of claim 2, wherein the supporting
unit further comprises a focus ring provided to enclose the
supporting plate and have a circular shape, and the inner liner is
provided to enclose the focus ring.
5. The substrate treating system of claim 4, wherein the gas
comprises a process gas, and the gas supplying unit further
comprises an auxiliary process gas line supplying the process gas
to the auxiliary nozzle.
6. The substrate treating system of claim 4, wherein the gas
comprises a cleaning gas, and the gas supplying unit further
comprises an auxiliary cleaning gas line supplying the cleaning gas
to the auxiliary nozzle.
7. The substrate treating system of claim 4, wherein the gas
comprises a process gas and a cleaning gas, and the gas supplying
unit comprises: an auxiliary process gas line supplying the process
gas to the auxiliary nozzle; and an auxiliary cleaning gas line
supplying the cleaning gas to the auxiliary nozzle.
8. The substrate treating system of claim 4, wherein the inner
liner is provided to have a circular-ring shape, and the inner
liner comprises a plurality of penetration holes formed through the
inner liner along a circumference thereof to connect an internal
space of the inner liner to an outer space.
9. The substrate treating system of claim 8, wherein the
penetration holes are positioned below the auxiliary nozzle.
10. The substrate treating system of claim 7, wherein the liner
unit further comprises a controller controlling the actuator, and
the controller controls the actuator in such a way that a vertical
position of the inner liner is changed depending on a state of a
substrate treating process.
11. The substrate treating system of claim 10, wherein the
controller controls the actuator in such a way that the inner liner
is positioned at a first position in a processing step of supplying
the process gas into the chamber to treat the substrate and is
positioned at a second position lower than the first position in a
waiting step before loading the substrate into the chamber.
12. The substrate treating system of claim 10, wherein the
controller controls the actuator in such a way that the inner liner
is positioned at a third position lower than the first position and
higher than the second position, in a cleaning step of supplying
the cleaning gas into the chamber to remove by-products from a
space between the supporting plate and the focus ring.
13. The substrate treating system of claim 11, wherein the first
position is higher than a top surface of the supporting unit.
14. The substrate treating system of claim 11, wherein the second
position is lower than a top surface of the supporting unit.
15. The substrate treating system of claim 12, wherein the third
position is higher than the top surface of the supporting unit.
16. The substrate treating system of claim 6, wherein the auxiliary
nozzle is provided through the inner liner to directly supply the
cleaning gas into a space between the focus ring and the supporting
plate.
17. The substrate treating system of claim 6, wherein the auxiliary
nozzle is provided through the inner liner in such a way to allow
the cleaning gas to be supplied in a direction parallel to a top
surface of the supporting plate.
18. A method of treating a substrate, comprising: a processing step
of supplying a process gas into a processing space of a chamber to
treat a substrate loaded on a supporting plate; and a waiting step
of waiting for loading of the substrate in the processing space of
the chamber, wherein an inner liner provided to enclose the
supporting plate is positioned at a first position in the
processing step and at a second position lower than the first
position in the waiting step.
19. The method of claim 18, further comprising a cleaning step for
removing by-products from a space between a focus ring enclosing
the supporting plate and the supporting plate, between the
processing step and the waiting step, wherein in the cleaning step,
the inner liner is positioned at a third position lower than the
first position and higher than the second position.
20. The method of claim 18, wherein, in the processing step, the
process gas is supplied to a main nozzle provided through a wall of
the chamber and to an auxiliary nozzle provided through the inner
liner.
21. The method of claim 20, wherein, in the processing step,
amounts of the process gas supplied to the main nozzle and the
auxiliary nozzle are substantially the same.
22. The method of claim 19, wherein, in the cleaning step, the
cleaning gas is supplied to an auxiliary nozzle provided through
the inner liner.
23. The method of claim 18, wherein the first position is higher
than a top surface of the substrate loaded on the supporting
plate.
24. The method of claim 18, wherein the second position is lower
than a top surface of the substrate loaded on the supporting
plate.
25. The method of claim 19, wherein the third position is higher
than the top surface of the substrate loaded on the supporting
plate.
26. The method of claim 18, wherein the inner liner is provided to
have a circular-ring shape and comprises a plurality of penetration
holes formed through the inner liner along a circumference thereof
to connect an internal space of the inner liner to an outer space,
and in the first position, the penetration holes are positioned at
a level higher than a top surface of the substrate loaded on the
supporting plate.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This U.S. non-provisional patent application claims priority
under 35 U.S.C. .sctn.119 to Korean Patent Application No.
10-2014-0131914, filed on Sep. 30, 2014, in the Korean Intellectual
Property Office, the entire contents of which are hereby
incorporated by reference.
BACKGROUND OF THE INVENTION
[0002] Example embodiments of the inventive concept relate to
systems and methods of treating a substrate, and in particular, to
systems and methods of treating a substrate using plasma.
[0003] Gas is ionized under high temperature environment, strong
electric field, or a radio frequency (RF) electromagnetic field to
form plasma including ions, electrons, and radicals. A process of
fabricating a semiconductor device includes a plasma etching step.
For example, a substrate or a layer formed on the substrate is
etched through physical collision or chemical reaction with ionic
particles contained plasma.
[0004] The etching process is performed in a process chamber. In
detail, plasma is generated by supplying a process gas into a
process chamber and then applying RF power to the process chamber
to excite the process gas. Here, the process gas is supplied into
the process chamber through center or side nozzles respectively
provided at a center region of a top cover of the process chamber
and at a sidewall of the process chamber. The process gas supplied
through the center nozzle is mainly used to etch a center region of
a substrate, whereas the process gas supplied through the side
nozzle is mainly used to etch an edge region of the substrate.
However, an exhaust port is provided between the process chamber
and a supporting plate for supporting the substrate, and thus, a
sizable amount of the process gas supplied through the side nozzle
is not supplied to the edge region of the substrate and is
discharged to the outside through the exhaust port; that is, there
may be a great loss of the supplied process gas.
[0005] In addition, various side rings enclosing the supporting
plate are provided in a substrate treating system. However,
by-products may be produced in a substrate treating process and may
be piled in a space between the supporting plate and the side ring.
The by-products may serve as particles, causing process failures in
a subsequent substrate treating process.
SUMMARY
[0006] Example embodiments of the inventive concept provide a
plasma-based substrate treating system with high process efficiency
and a method of treating a substrate using the same.
[0007] Other example embodiments of the inventive concept provide a
plasma-based substrate treating system capable of reducing loss of
a process gas to be supplied therein and a method of treating a
substrate using the same.
[0008] Still other example embodiments of the inventive concept
provide a plasma-based substrate treating system capable of
reducing a spatial variation in an amount of a process gas supplied
onto a substrate and a method of treating a substrate using the
same.
[0009] Even still other example embodiments of the inventive
concept provide a plasma-based substrate treating system configured
to effectively remove by-products from a space between a supporting
plate and a side ring and a method of treating a substrate using
the same.
[0010] According to example embodiments of the inventive concept, a
substrate treating system may include a chamber with a processing
space, a supporting unit provided in the processing space to
support a substrate, a gas supplying unit provided in the
processing space to supply gas into the processing space, a plasma
source unit generating plasma from the gas, and a liner unit
disposed to enclose the supporting unit. The supporting unit may
include a supporting plate supporting a substrate. The liner unit
may include an inner liner enclosing the supporting plate and an
actuator vertically moving the inner liner.
[0011] In some embodiments, the gas supplying unit may include a
main nozzle coupled to a wall of the chamber to supply the gas into
the processing space, and an auxiliary nozzle provided on the inner
liner to supply the gas into the processing space.
[0012] In some embodiments, the liner unit may further include an
outer liner provided in the chamber and shaped like a ring.
[0013] In some embodiments, the supporting unit may further include
a focus ring provided to enclose the supporting plate and have a
circular shape, and the inner liner may be provided to enclose the
focus ring.
[0014] In some embodiments, the gas may include a process gas and
the gas supplying unit may further include an auxiliary process gas
line supplying the process gas to the auxiliary nozzle.
[0015] In some embodiments, the gas may include a cleaning gas and
the gas supplying unit may further include an auxiliary cleaning
gas line supplying the cleaning gas to the auxiliary nozzle.
[0016] In some embodiments, the gas may include a process gas and a
cleaning gas. The gas supplying unit may include an auxiliary
process gas line supplying the process gas to the auxiliary nozzle,
and an auxiliary cleaning gas line supplying the cleaning gas to
the auxiliary nozzle.
[0017] In some embodiments, the inner liner may be provided to have
a circular-ring shape, and the inner liner may include a plurality
of penetration holes formed through the inner liner along a
circumference thereof to connect an internal space of the inner
liner to an outer space.
[0018] In some embodiments, the penetration holes may be positioned
below the auxiliary nozzle.
[0019] In some embodiments, the liner unit may further include a
controller controlling the actuator, and the controller may control
the actuator in such a way that a vertical position of the inner
liner is changed depending on a state of a substrate treating
process.
[0020] In some embodiments, the controller may control the actuator
in such a way that the inner liner is positioned at a first
position in a processing step of supplying the process gas into the
chamber to treat the substrate and is positioned at a second
position lower than the first position in a waiting step before
loading the substrate into the chamber.
[0021] In some embodiments, the controller may control the actuator
in such a way that the inner liner is positioned at a third
position lower than the first position and higher than the second
position, in a cleaning step of supplying the cleaning gas into the
chamber to remove by-products from a space between the supporting
plate and the focus ring.
[0022] In some embodiments, the first position may be higher than a
top surface of the supporting unit.
[0023] In some embodiments, the second position may be lower than a
top surface of the supporting unit.
[0024] In some embodiments, the third position may be higher than
the top surface of the supporting unit.
[0025] In some embodiments, the auxiliary nozzle may be provided
through the inner liner to directly supply the cleaning gas into a
space between the focus ring and the supporting plate.
[0026] In some embodiments, the auxiliary nozzle may be provided
through the inner liner in such a way to allow the cleaning gas to
be supplied in a direction parallel to a top surface of the
supporting plate.
[0027] According to example embodiments of the inventive concept, a
method of treating a substrate may include a processing step of
supplying a process gas into a processing space of a chamber to
treat a substrate loaded on a supporting plate, and a waiting step
of waiting for loading of the substrate in the processing space of
the chamber. An inner liner provided to enclose the supporting
plate may be positioned at a first position in the processing step
and at a second position lower than the first position in the
waiting step.
[0028] In some embodiments, the method may further include a
cleaning step for removing by-products from a space between a focus
ring enclosing the supporting plate and the supporting plate,
between the processing step and the waiting step. In the cleaning
step, the inner liner may be positioned at a third position lower
than the first position and higher than the second position.
[0029] In some embodiments, in the processing step, the process gas
may be supplied to a main nozzle provided through a wall of the
chamber and to an auxiliary nozzle provided through the inner
liner.
[0030] In some embodiments, in the processing step, amounts of the
process gas supplied to the main nozzle and the auxiliary nozzle
may be substantially the same.
[0031] In some embodiments, in the cleaning step, the cleaning gas
may be supplied to an auxiliary nozzle provided through the inner
liner.
[0032] In some embodiments, the first position may be higher than a
top surface of the substrate loaded on the supporting plate.
[0033] In some embodiments, the second position may be lower than a
top surface of the substrate loaded on the supporting plate.
[0034] In some embodiments, the third position may be higher than
the top surface of the substrate loaded on the supporting
plate.
[0035] In some embodiments, the inner liner may be provided to have
a circular-ring shape and to include a plurality of penetration
holes formed through the inner liner along a circumference thereof
to connect an internal space of the inner liner to an outer space.
In the first position, the penetration holes may be positioned at a
level higher than a top surface of the substrate loaded on the
supporting plate.
BRIEF DESCRIPTION OF THE DRAWINGS
[0036] Example embodiments will be more clearly understood from the
following brief description taken in conjunction with the
accompanying drawings. The accompanying drawings represent
non-limiting, example embodiments as described herein.
[0037] FIG. 1 is a sectional view illustrating a substrate treating
system according to example embodiments of the inventive
concept.
[0038] FIGS. 2 and 3 are perspective views illustrating an inner
liner of FIG. 1.
[0039] FIG. 4 is a sectional view of an auxiliary nozzle provided
in an inner liner of FIG. 1.
[0040] FIGS. 5 through 7 are sectional views exemplarily
illustrating a change in position of an inner liner, when a
substrate treating process is performed.
[0041] FIG. 8 is a table schematically illustrating a substrate
treating method according to example embodiments of the inventive
concept.
[0042] FIG. 9 is a sectional view illustrating a substrate treating
system according to other example embodiments of the inventive
concept.
[0043] It should be noted that these figures are intended to
illustrate the general characteristics of methods, structure and/or
materials utilized in certain example embodiments and to supplement
the written description provided below. These drawings are not,
however, to scale and may not precisely reflect the precise
structural or performance characteristics of any given embodiment,
and should not be interpreted as defining or limiting the range of
values or properties encompassed by example embodiments. For
example, the relative thicknesses and positioning of molecules,
layers, regions and/or structural elements may be reduced or
exaggerated for clarity. The use of similar or identical reference
numbers in the various drawings is intended to indicate the
presence of a similar or identical element or feature.
DETAILED DESCRIPTION
[0044] Example embodiments of the inventive concepts will now be
described more fully with reference to the accompanying drawings,
in which example embodiments are shown. Example embodiments of the
inventive concepts may, however, be embodied in many different
forms and should not be construed as being limited to the
embodiments set forth herein; rather, these embodiments are
provided so that this disclosure will be thorough and complete, and
will fully convey the concept of example embodiments to those of
ordinary skill in the art. In the drawings, the thicknesses of
layers and regions are exaggerated for clarity. Like reference
numerals in the drawings denote like elements, and thus their
description will be omitted.
[0045] It will be understood that when an element is referred to as
being "connected" or "coupled" to another element, it can be
directly connected or coupled to the other element or intervening
elements may be present. In contrast, when an element is referred
to as being "directly connected" or "directly coupled" to another
element, there are no intervening elements present. Like numbers
indicate like elements throughout. As used herein the term "and/or"
includes any and all combinations of one or more of the associated
listed items. Other words used to describe the relationship between
elements or layers should be interpreted in a like fashion (e.g.,
"between" versus "directly between," "adjacent" versus "directly
adjacent," "on" versus "directly on").
[0046] It will be understood that, although the terms "first",
"second", etc. may be used herein to describe various elements,
components, regions, layers and/or sections, these elements,
components, regions, layers and/or sections should not be limited
by these terms. These terms are only used to distinguish one
element, component, region, layer or section from another element,
component, region, layer or section. Thus, a first element,
component, region, layer or section discussed below could be termed
a second element, component, region, layer or section without
departing from the teachings of example embodiments.
[0047] Spatially relative terms, such as "beneath," "below,"
"lower," "above," "upper" and the like, may be used herein for ease
of description to describe one element or feature's relationship to
another element(s) or feature(s) as illustrated in the figures. It
will be understood that the spatially relative terms are intended
to encompass different orientations of the device in use or
operation in addition to the orientation depicted in the figures.
For example, if the device in the figures is turned over, elements
described as "below" or "beneath" other elements or features would
then be oriented "above" the other elements or features. Thus, the
exemplary term "below" can encompass both an orientation of above
and below. The device may be otherwise oriented (rotated 90 degrees
or at other orientations) and the spatially relative descriptors
used herein interpreted accordingly.
[0048] The terminology used herein is for the purpose of describing
particular embodiments only and is not intended to be limiting of
example embodiments. As used herein, the singular forms "a," "an"
and "the" are intended to include the plural forms as well, unless
the context clearly indicates otherwise. It will be further
understood that the terms "comprises", "comprising", "includes"
and/or "including," if used herein, specify the presence of stated
features, integers, steps, operations, elements and/or components,
but do not preclude the presence or addition of one or more other
features, integers, steps, operations, elements, components and/or
groups thereof.
[0049] Unless otherwise defined, all terms (including technical and
scientific terms) used herein have the same meaning as commonly
understood by one of ordinary skill in the art to which example
embodiments of the inventive concepts belong. It will be further
understood that terms, such as those defined in commonly-used
dictionaries, should be interpreted as having a meaning that is
consistent with their meaning in the context of the relevant art
and will not be interpreted in an idealized or overly formal sense
unless expressly so defined herein.
[0050] FIG. 1 is a sectional view illustrating a substrate treating
system according to example embodiments of the inventive concept,
FIGS. 2 and 3 are perspective views illustrating an inner liner of
FIG. 1, and FIG. 4 is a sectional view of an auxiliary nozzle
provided in an inner liner of FIG. 1. Referring to FIGS. 1 through
4, a substrate treating system 10 may be configured to treat a
substrate or wafer W using plasma. The substrate treating system 10
may include a chamber 100, a supporting unit 200, a gas supplying
unit 300, a plasma source unit 400, a liner unit 500, and a baffle
unit 600.
[0051] The chamber 100 may be configured to define a top open
space. The chamber 100 may provide a processing space, in which a
substrate treating process will be performed. The chamber 100 may
include a body 110 and a window 120.
[0052] The body 110 may be provided to define a top open internal
space therein. The internal space of the body 110 may be used as a
space for the substrate treating process. The body 110 may be
formed of a metallic material. For example, the body 110 may be
formed of an aluminum-containing material. The body 110 may be
grounded. An exhausting hole 102 may be formed through a bottom
surface of the body 110. The exhausting hole 102 may be used as a
path for exhausting by-products produced in the substrate treating
process and a process gas remaining in the body 110 to the outside
of the body 110.
[0053] The window 120 may be provided on the body 110 to cover the
open top of the body 110. The window 120 may be provided to have a
plate-shaped structure and to seal the internal space of the body
110. The window 120 may be formed of or include a dielectric
material.
[0054] The supporting unit 200 may be positioned in the body 110.
The supporting unit 200 may be configured to support the substrate
W. The supporting unit 200 may include an electrostatic chuck
configured to hold the substrate W using an electrostatic force.
Alternatively, the supporting unit 200 may be configured to hold
the substrate W using other ways such as a mechanical clamping. For
the sake of simplicity, the description that follows will refer to
an example of the present embodiment in which an electrostatic
chuck is used as the supporting unit 200.
[0055] The electrostatic chuck 200 may include a supporting plate
210, a lower electrode 220, a heater 230, a lower plate 240, a
lower power 260, an insulating plate 270, and a focus ring 280.
[0056] The supporting plate 210 may be used as an upper part of the
electrostatic chuck 200. The supporting plate 210 may be shaped
like a circular disk and may be formed of a dielectric material.
The substrate W may be loaded on a top surface of the supporting
plate 210. The top surface of the supporting plate 210 may have a
radius smaller than that of the substrate W. Accordingly, if the
substrate W is loaded on the supporting plate 210, an edge region
of the substrate W may be positioned outside the supporting plate
210.
[0057] The lower electrode 220 and the heater 230 may be buried in
the supporting plate 210. The lower electrode 220 may be positioned
on the heater 230. The lower electrode 220 may be electrically
connected to a first power supply 223. The first power supply 223
may be configured to supply a DC power, allowing for the
electrostatic chuck 200 to fasten the substrate W. A switch 222 may
be installed between the lower electrode 220 and the first power
supply 223. The lower electrode 220 may be electrically connected
to the first power supply 223, depending on an on/off state of the
switch 222. For example, in the case where the switch 222 is in an
on state, a DC current may be applied to the lower electrode 220. A
current applied to the lower electrode 220 may make it possible for
the lower electrode 220 to exert an electrostatic force to the
substrate W, and thus, the substrate W may be fastened on the
supporting plate 210.
[0058] The heater 230 may be electrically connected to a second
power supply 233. In the heater 230, the electric current supplied
from the second power supply 233 may be converted to heat energy.
The heat energy may be transmitted to the substrate W through the
supporting plate 210. For example, the heat energy generated in the
heater 230 may allow for the substrate W to be heated to a specific
temperature. The heater 230 may be provided in the form of a
coil-shaped heating wire. In some embodiments, a plurality of
heaters 230 may be provided in the supporting plate 210.
[0059] The lower plate 240 may be positioned below the supporting
plate 210. A bottom surface of the supporting plate 210 may be
attached to a top surface of the lower plate 240 by an adhesive
layer 236. The lower plate 240 may be formed of an
aluminum-containing material. The top surface of the lower plate
240 may be higher at a center region thereof than at an edge region
thereof, thereby having staircase structure. The center region of
the top surface of the lower plate 240 may have substantially the
same or similar area as that of the bottom surface of the
supporting plate 210 and may be adhered to the bottom surface of
the supporting plate 210.
[0060] The lower plate 240 may be provided to have at least one
path for circulating a heat transfer medium. For example, the heat
transfer medium may contain an inert gas (e.g., helium gas). In
some embodiments, the lower plate 240 may be configured in such a
way that a pathway can be circulated therein. For example, the
lower plate 240 may be provided to have a second circulation
conduit 242, through which the coolant for cooling the lower plate
240 is circulated. The cooling of the lower plate 240 may be
performed in such a way that the substrate W is cooled down to a
specific temperature.
[0061] The insulating plate 270 may be provided below the lower
plate 240. The insulating plate 270 may be provided to have the
substantially same or similar size as the lower plate 240. The
insulating plate 270 may be positioned between the lower plate 240
and the chamber 100. The insulating plate 270 may be formed of an
insulating material to electrically isolate the lower plate 240 and
the chamber 100 from each other.
[0062] The lower power 260 may be connected to the lower plate 240
to supply an electric power to the lower plate 240. The lower power
260 may be configured to generate an electric power with radio
frequency. In some embodiments, the lower power 260 may be
grounded.
[0063] The focus ring 280 may be provided at an edge region of the
electrostatic chuck 200. The focus ring 280 may be shaped like a
ring and may be provided along a circumference of the supporting
plate 210. The focus ring 280 may include an inner part 282 and an
outer part 281. The inner part 282 may be position at an inner
region of the focus ring 280. The inner part 282 may be provided to
have a top surface lower than that of the outer part 281. In some
embodiments, the inner part 282 may be provided to have a top
surface coplanar with that of the supporting plate 210. The inner
part 282 may support the edge region of the substrate W located
outside the supporting plate 210. The outer part 281 may be
positioned outside the inner part 282. The outer part 281 may be
provided to face a side portion of the substrate W loaded on the
supporting plate 210. The outer part 281 may be provided to enclose
the edge region of the substrate W.
[0064] The gas supplying unit 300 may include main nozzles 310 and
320 and an auxiliary nozzle 330.
[0065] The main nozzles 310 and 320 may supply gas into the
processing space. The gas supplying unit 300 may include a
plurality of main nozzles 310 and 320. The main nozzles 310 and 320
may be provided through a wall of the chamber 100. As an example,
the main nozzles 310 and 320 may be provided through top and side
walls, respectively, of the chamber 100. In some embodiments, the
main nozzle may include an upper nozzle 310 and a side nozzle 320.
The upper nozzle 310 may be provided through the top wall of the
chamber 100. The upper nozzle 310 may be positioned on a center of
the substrate. The upper nozzle 310 may supply gas onto the
substrate. The upper nozzle 310 may be configured to have at least
one ejection hole 311. The ejection hole 311 may supply a process
gas to a center region of an excitation space IS. The upper nozzle
310 may be supported by a nozzle supporting rod (not shown) and may
be positioned through the window 120.
[0066] The side nozzle 320 may be provided to surround the
excitation space IS and may be shaped like a ring. The side nozzle
320 may be provided through the sidewall of the chamber 100. The
side nozzle 320 may be configured to have at least one ejection
hole 321. The ejection hole 321 may be inclined toward the
supporting unit 200. The side nozzle 320 may supply gas to an edge
region of the excitation space IS.
[0067] A main gas storage 360 may be configured to store the
process gas. The process gas stored in the main gas storage 360 may
be supplied to the upper nozzle 310 and the side nozzle 320. A main
gas supplying line 361 may be provided to connect the main gas
storage 360 to the upper and side nozzles 310 and 320. The main gas
supplying line 361 may supply the process gas stored in the main
gas storage 360 to the upper nozzle 310 and the side nozzle 320. A
valve 362 may be provided on the main gas supplying line 361. The
valve 362 may be used to control a flow rate of the process gas
passing through the main gas supplying line 361.
[0068] The auxiliary nozzle 330 may be provided through an inner
liner 510 to be described below. The auxiliary nozzle 330 may be
provided to define an ejection hole 332 of the inner liner 510. In
some embodiments, a plurality of ejection holes 332 may be disposed
along a circumference of the inner liner 510. The auxiliary nozzle
330 may include a vertical conduit 331 and the ejection hole 332.
The vertical conduit 331 may extend in a vertical direction from
bottom to top of the inner liner 510. An end of the vertical
conduit 331 may be connected to the ejection hole 332. The ejection
hole 332 may extend in a direction from the vertical conduit 331
toward the supporting unit 200. The ejection hole 332 may be
configured to eject the supplied gas toward the edge region of the
substrate. In certain embodiments, the auxiliary nozzle 330 may be
provided to have a structure coupled to the inner liner 510.
[0069] In some embodiments, the auxiliary nozzle 330 of the inner
liner 510 may be configured to supply a process gas and a cleaning
gas. In other example embodiments, the auxiliary nozzle 330 of the
inner liner 510 may be configured to supply the process gas to the
edge region of the substrate. In still other example embodiments,
the auxiliary nozzle 330 of the inner liner 510 may be configured
to directly supply the cleaning gas into a space between the focus
ring 280 and the supporting plate 210. In even other example
embodiments, the auxiliary nozzle 330 of the inner liner 510 may be
configured to supply the process or cleaning gas in a direction
parallel to the top surface of the supporting plate 210.
[0070] An auxiliary process gas storage 373 may be provided to
store a process gas. The auxiliary process gas line 371 may be
provided to connect the auxiliary process gas storage 373 to the
auxiliary nozzle 330. The process gas may be supplied to the
auxiliary nozzle 330 through the auxiliary process gas line 371. A
valve 375 may be provided on the auxiliary process gas line 371.
The valve 375 may be used to control a flow rate of the process gas
passing through the auxiliary process gas line 371.
[0071] An auxiliary cleaning gas storage 374 may be provided to
store a cleaning gas. An auxiliary cleaning gas line 372 may be
provided to connect the auxiliary cleaning gas storage 374 to the
auxiliary nozzle 330. The auxiliary cleaning gas line 372 may be
used to supply cleaning gas in the auxiliary cleaning gas storage
374 to the auxiliary nozzle 330. The auxiliary nozzle 330 may be
provided to supply the cleaning gas into a space between the focus
ring 280 and the supporting plate 210. A valve 376 may be provided
on the auxiliary cleaning gas line 372. The valve 376 may be used
to control a flow rate of the cleaning gas passing through the
auxiliary cleaning gas line 372. As an example, the cleaning gas
may contain an inactive or inert gas (e.g., nitrogen gas or argon
gas).
[0072] The plasma source unit 400 may be configured to transform
the process gas, which is supplied in the chamber 100, into plasma.
In some embodiments, the plasma source unit 400 may include an
inductively-coupled-plasma (ICP) source. For example, the plasma
source unit 400 may include an antenna room 410, an antenna 420,
and a plasma power 430. The antenna room 410 may be provided to
have a bottom-open cylindrical structure. The antenna room 410 may
be provided to have an empty space. The antenna room 410 may be
provided to have a diameter corresponding to that of the chamber
100. The antenna room 410 may have a bottom structure allowing the
antenna room 410 to be attached to or detached from the window 120.
The antenna 420 may be provided in the antenna room 410. The
antenna 420 may be provided to have a spiral or coil structure with
a plurality of windings and may be coupled to the plasma power 430.
The antenna 420 may be supplied with an electric power provided
from the plasma power 430. The plasma power 430 may be positioned
outside the chamber 100. In the case where the electric power is
applied to the antenna 420, an electromagnetic field may be
generated in the processing space of the chamber 100. The process
gas may be excited into a plasma state by the electromagnetic
field.
[0073] The liner unit 500 may be configured to supply gas onto the
top surface of the substrate. In some embodiments, the liner unit
500 may be configured to supply the process and/or cleaning gas
into the processing space and to exhaust by-products, which may be
produced during a substrate treating process, to an exhausting
hole. The liner unit 500 may further include an outer liner 130, an
actuator 550, and a controller 570, in addition to the inner liner
510.
[0074] The outer liner 130 may be provided in the body 110. The
outer liner 130 may be provided to have a space with open top and
bottom. The outer liner 130 may be provided to have a cylindrical
shape. The outer liner 130 may have a radius, which may correspond
or equal to that of an inner space of the body 110. The outer liner
130 may be provided along an inner side wall of the body 110. The
outer liner 130 may include a supporting ring 131, which is
provided on the body 110 and is extended from a top surface of the
body 110 toward the outside. The supporting ring 131 may be
provided in the form of a ring-shaped plate and may protrude
outward from an outer circumference of the outer liner 130. The
supporting ring 131 may be disposed on the body 110 and may be
supported by the outer liner 130. The outer liner 130 may be formed
of the same material as the body 110. The outer liner 130 may be
formed of an aluminum-containing material. The outer liner 130 may
protect the inner side wall of the body 110. During excitation of a
process gas, arc discharge may occur in the chamber 100. Such an
arc discharge may lead to damage of the chamber 100. However,
according to example embodiments of the inventive concept, the
outer liner 130 provided on the inner side surface of the body 110
may make it possible to prevent the inner side surface of the body
110 from being damaged by the arc discharge.
[0075] The inner liner 510 may be provided to enclose the
supporting unit 200. The inner liner 510 may be provided in the
form of a ring. The auxiliary nozzle 330 may be provided through
the inner liner 510. A plurality of penetration holes 511 may be
formed in the inner liner 510 to connect an internal space of the
inner liner 510 to an outer space along a circumference of the
inner liner 510. The plurality of penetration holes 511 may be
formed below the auxiliary nozzle 330. The penetration holes 511
may be perpendicular to a circumferential surface of the inner
liner 510 and may be provided to form a plurality of columns
parallel to each other. The by-products produced during a substrate
treating process may be exhausted through the penetration holes
511.
[0076] The actuator 550 may be connected to the inner liner 510.
The actuator 550 may allow the inner liner 510 to be moved in a
vertical direction.
[0077] The controller 570 may control the actuator 550. For
example, the controller 570 may control the actuator 550 in such a
way that a vertical level of the inner liner 510 is changed
depending on a state of the substrate treating process.
[0078] As an example, in a processing step A, a process gas for
treating a substrate may be supplied into the chamber 100, and the
controller 570 may control the actuator 550 in such a way that, in
the processing step A, the inner liner 510 is positioned at a first
position R1. In a cleaning step B, a cleaning gas may be supplied
to remove by-products from a space between the supporting plate 210
and the focus ring 280, and the controller 570 may control the
actuator 550 in such a way that, in the cleaning step B, the inner
liner 510 is positioned at a third position R3. In a waiting step
C, a substrate may wait for loading in the chamber 100, and the
controller 570 may control the actuator 550 in such a way that, in
the waiting step C, the inner liner 510 is positioned at a second
position R2. Here, the first position R1 may be higher than a top
surface of the supporting unit 200 in a vertical level. The second
position R2 may be lower than the top surface of the supporting
unit 200 in the vertical level. The third position R3 may be higher
than the top surface of the supporting unit 200 in the vertical
level.
[0079] The first position R1 may be higher than the second position
R2 and the third position R3. The second position R2 may be lower
than the third position R3. The third position R3 may be lower than
the first position R1 and higher than the second position R2.
[0080] Since the auxiliary nozzle 330 is provided in the inner
liner 510, it is possible to effectively supply a process gas to an
edge region of a substrate and thereby to reduce an amount of the
process gas to be lost. Furthermore, since the penetration hole 511
is provided in the inner liner 510, it is possible to exhaust
by-products, which may be produced in the substrate treating
process, to the outside, and thereby to improve process efficiency
of the substrate treating process.
[0081] The baffle unit 600 may be positioned between the inner
sidewall of the body 110 and the supporting unit 200. The baffle
may be provided in the form of a circular ring. A plurality of
penetration holes may be provided through the baffle. The process
gas supplied into the body 110 may be exhausted to the exhausting
hole 102 through the penetration holes of the baffle unit 600. The
flow of the process gas may be controlled depending on shapes of
the baffle unit 600 and the penetration holes.
[0082] FIGS. 5 through 7 are sectional views exemplarily
illustrating a change in position of an inner liner, when a
substrate treating process is performed, and FIG. 8 is a table
schematically illustrating a substrate treating method according to
example embodiments of the inventive concept. Hereinafter, an
example of a substrate treating process will be described with
reference to FIGS. 5 through 8. As an example, substrates may
include first and second groups of substrates, and the substrate
treating process may be sequentially performed on the first and
second groups.
[0083] The substrate treating process may include a processing step
A, a cleaning step B, and a waiting step C.
[0084] In the processing step A, a process gas may be supplied into
the processing space of the chamber 100 (or onto a substrate loaded
on the supporting plate 210) to process the substrate. In the
processing step A, the process gas may be supplied through the
auxiliary nozzle 330 of the inner liner 510. In the processing step
A, the inner liner 510 may be positioned at a first position R1.
Here, the first position R1 may be higher than that of the
substrate loaded on the supporting plate 210. When the inner liner
510 is positioned at the first position R1, the penetration hole
511 may be positioned at a level higher than a top surface of the
substrate loaded on the supporting plate 210. In the case where the
inner liner 510 is positioned at the first position R1 in the
processing step A, it is possible to increase a gas density on the
edge region of the substrate and thereby to improve efficiency of
the substrate treating process. In the case where by-products are
produced in the substrate-treating process, they may be exhausted
to the outside through the penetration hole 511 of the inner liner
510.
[0085] The cleaning step B may be performed after the processing
step A. The cleaning step B may be performed after performing the
processing step A on one of the substrates of the first group and
before performing the processing step A on another of the
substrates of the first group. The cleaning step B may be performed
to remove the by-products from a space between the focus ring 280
and the supporting plate 210. In the cleaning step B, the inner
liner 510 may be positioned at a third position R3. The third
position R3 may be higher than that of the top surface of the
substrate loaded on the supporting plate 210. The third position R3
may be lower than the first position R1 in a vertical level. In the
cleaning step B, a cleaning gas may be supplied through the
auxiliary nozzle 330 of the inner liner 510. As a result of the
supply of the cleaning gas, the by-products may be removed from the
space between the focus ring 280 and the supporting plate 210, and
this may make it possible to improve process efficiency in a
subsequent processing step A. If the cleaning step B of a substrate
is finished, the substrate may be unloaded from the chamber 100,
and then, the processing step A and the cleaning step B may be
sequentially performed on a new substrate selected from the first
group.
[0086] If the processing and cleaning steps A and B for the first
group of substrates are finished, the waiting step C may be
performed before the processing and cleaning steps A and B on the
second group of substrates. In the waiting step C, one of the
substrates of the second group may be loaded in the processing
space of the chamber 100. In the waiting step C, the inner liner
510 may be positioned at a second position R2. The second position
R2 may be lower than the top surface of the substrate loaded on the
supporting plate 210. The second position R2 may be lower than the
first position R1 and the third position R3.
[0087] FIG. 9 is a sectional view illustrating a substrate treating
system according to other example embodiments of the inventive
concept. A substrate treating system 20 may be configured to have
substantially the same features as that of FIG. 1. However, in the
substrate treating system 20, the auxiliary process gas line 371
and the auxiliary cleaning gas line 372 may be connected to the
side nozzle 320. The process and cleaning gases, which are
respectively supplied from the process and cleaning gas storages
373 and 374, may be supplied to the excitation space IS through
both of the side nozzle 320 and the auxiliary nozzle 330. As an
example, amounts or flow rates of the process and cleaning gases
supplied through the side and auxiliary nozzles 320 and 330 may be
substantially the same. Alternatively, the amounts or flow rates of
the process and cleaning gases supplied through the side and
auxiliary nozzles 320 and 330 may be different from each other.
[0088] Unlike the afore-described example, the main nozzle and the
auxiliary nozzle may be configured to supply both of the process
and cleaning gases.
[0089] In addition, according to example embodiments of the
inventive concept, the supporting unit may be an electrostatic
chuck, but in other example embodiments, the supporting unit may
have one of various structures capable of supporting a substrate.
For example, the supporting unit may be a vacuum chuck fastening a
substrate using a vacuum pressure.
[0090] In the afore-described example, a plasma etching process has
been described as an example of a substrate treating process, but
example embodiments of the inventive concept are not limited
thereto. For example, the substrate treating process may be one of
various other plasma processes (e.g., deposition, ashing, and
cleaning processes).
[0091] In the afore-described example, the ICP source has been
described as an example of the plasma generator (e.g., the plasma
source unit), but various other plasma systems (e.g., a
capacitively-coupled plasma (CCP) or electron cyclotron resonance
(ECR) plasma source), may be used as the plasma generator.
[0092] According to example embodiments of the inventive concept,
an auxiliary nozzle may be provided through an inner liner, and
this may make it possible to improve process efficiency of a
substrate treating system.
[0093] According to other example embodiments of the inventive
concept, the auxiliary nozzle may be used to supply a process gas
into a process chamber, and this may make it possible to reduce
loss of the supplied process gas.
[0094] According to still other example embodiments of the
inventive concept, the auxiliary nozzle may be configured to supply
the process gas onto an edge region of a substrate, and this may
make it possible to uniformly supply the process gas onto the
substrate without spatial variation in amount of the process gas
supplied on the substrate.
[0095] According to even other example embodiments of the inventive
concept, the auxiliary nozzle may be used to supply a cleaning gas
for removing by-products from a space between a supporting plate
and a focus ring, and this may make it possible to further improve
process efficiency of the substrate treating process.
[0096] While example embodiments of the inventive concepts have
been particularly shown and described, it will be understood by one
of ordinary skill in the art that variations in form and detail may
be made therein without departing from the spirit and scope of the
attached claims.
* * * * *