U.S. patent application number 14/951198 was filed with the patent office on 2016-03-17 for semiconductor device and battery pack.
The applicant listed for this patent is Renesas Electronics Corporation. Invention is credited to Ryosuke Enomoto, Daisuke Kato, Lin Xing.
Application Number | 20160079789 14/951198 |
Document ID | / |
Family ID | 51191752 |
Filed Date | 2016-03-17 |
United States Patent
Application |
20160079789 |
Kind Code |
A1 |
Kato; Daisuke ; et
al. |
March 17, 2016 |
SEMICONDUCTOR DEVICE AND BATTERY PACK
Abstract
In a battery monitoring system included in a secondary battery,
high-accuracy charge control is enabled at low cost. A
semiconductor device includes: a drive unit which drives a
transistor for controlling the charge current of a secondary
battery and which is configured to be capable of selecting one of
plural different voltages as a drive voltage (VGC) for turning on
the transistor; and a data processing control unit which performs
program processing. The data processing control unit generates
condition information including information about the battery level
of the secondary battery based on measured values of the secondary
battery voltage and current and adjusts the charge current of the
secondary battery by changing the drive voltage selection.
Inventors: |
Kato; Daisuke; (Kanagawa,
JP) ; Enomoto; Ryosuke; (Kanagawa, JP) ; Xing;
Lin; (Kanagawa, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Renesas Electronics Corporation |
Tokyo |
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JP |
|
|
Family ID: |
51191752 |
Appl. No.: |
14/951198 |
Filed: |
November 24, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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14082285 |
Nov 18, 2013 |
9231419 |
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14951198 |
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Current U.S.
Class: |
320/162 |
Current CPC
Class: |
G01R 31/3842 20190101;
H02J 7/00711 20200101; H02J 7/0072 20130101; H02J 7/00718 20200101;
Y02E 60/10 20130101; H02J 7/0029 20130101; H02J 7/0031 20130101;
H02J 7/007184 20200101; H02J 7/00302 20200101; H02J 7/00304
20200101; H01M 10/4257 20130101 |
International
Class: |
H02J 7/00 20060101
H02J007/00; G01R 31/36 20060101 G01R031/36 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 23, 2013 |
JP |
2013-010127 |
Claims
1. A semiconductor device for monitoring a condition of a secondary
battery and controlling charging of the secondary battery,
comprising: a voltage measuring unit for measuring a voltage of the
secondary battery; a current measuring unit for measuring a current
of the secondary battery; a drive unit for driving a transistor for
controlling a charge current of the secondary battery; and a data
processing control unit, wherein the data processing control unit,
based on measurement values obtained by the voltage measuring unit
and the current measuring unit, controls the drive unit, wherein
the drive unit is configured to be capable of selecting one of a
plurality of different voltages as a drive voltage for turning on
the transistor, and wherein the data processing control unit
switches selection of the drive voltage.
2. The semiconductor device according to claim 1, wherein the drive
unit includes: a voltage generation circuit for generating a
plurality of voltages; a voltage selection circuit for selecting
one of the voltages generated by the voltage generation circuit
based on an instruction from the data processing control unit; a
drive signal generation unit for generating, based on an
instruction from the data processing control unit, a drive signal
for driving the transistor, and a level shift circuit for
level-shifting the drive signal generated by the drive signal
generation unit to the voltage selected by the voltage selection
circuit.
3. The semiconductor device according to claim 2, further
comprising a regulator circuit for generating a reference voltage
based on the voltage of the secondary battery, wherein the voltage
generation circuit includes a first resistor ladder circuit for
dividing the reference voltage generated by the regulator circuit
into a plurality of voltages.
4. The semiconductor device according to claim 3, wherein the
voltage generation circuit includes a second resistor ladder
circuit for inputting thereto the voltage of the secondary battery
and dividing the voltage into a plurality of voltages.
5. The semiconductor device according to claim 2, further
comprising a PWM signal generation unit for generating a PWM signal
in accordance with a condition for a PWM signal to be generated set
by the data processing control unit, wherein the drive signal
generation unit generates the drive signal with a pulse period and
a duty ratio of the PWM signal generated by the PWM signal
generation unit.
6. The semiconductor device according to claim 2, wherein, when
charging the secondary battery, the data processing control unit
performs processing for: comparing a charge rate calculated based
on a current value measured by the current measuring unit and a
target charge rate; selecting, when the calculated charge rate is
larger than the target charge rate, the drive voltage such that the
calculated charge rate becomes equal to the target charge rate;
selecting, when, after starting charging of the secondary battery,
the voltage of the secondary battery rises to a fully charged
voltage, the drive voltage such that the voltage of the secondary
battery does not exceed the fully charged voltage, and instructing,
when the current value measured by the current measuring unit
becomes smaller than a charge ending current, the drive signal
generation unit to generate the drive signal for turning off the
transistor.
7. The semiconductor device according to claim 5, wherein, when
charging the secondary battery, the data processing control unit
performs processing for: selecting the drive voltage such that the
current value measured by the current measuring unit becomes equal
to a target current value for trickle charging; setting the
condition for the PWM signal to be generated in the PWM signal
generation unit, and causing the PWM signal generation unit to stop
outputting the PWM signal when, after starting charging of the
secondary battery, the voltage of the secondary battery rises to a
first threshold voltage and to restart outputting the PWM signal,
when the voltage of the secondary battery lowers to a secondary
threshold voltage lower than the first threshold voltage.
8. The semiconductor device according to claim 5, wherein, when
charging the secondary battery, the data processing control unit
performs processing for: selecting, when the voltage of the
secondary battery is lower than a third threshold voltage, the
drive voltage such that the current value measured by the current
measuring unit becomes equal to a target current value for
pre-charging; setting the condition for the PWM signal to be
generated in the PWM signal generation unit causing, when, after
starting charging of the secondary battery, the voltage of the
secondary battery rises, generation of the drive signal to be
continued until the voltage of the secondary voltage reaches the
third threshold voltage, and causing, when, after starting charging
of the secondary battery, the voltage of the secondary battery does
not rise, generation of the drive signal to be stopped.
9. The semiconductor device according to claim 5, wherein, when
charging the secondary battery, the data processing control unit
performs processing for: selecting the drive voltage such that the
current value measured by the current measuring unit becomes equal
to a target current value for pulse charging; setting the condition
for the PWM signal to be generated in the PWM signal generation
unit and instructing the PWM signal generation unit to output the
PWM signal; causing, when, after starting charging of the secondary
battery, the voltage of the secondary battery rises to a fully
charged voltage, the PWM signal generation unit to stop outputting
the PWM signal and instructing the drive signal generation unit to
generate a drive signal for turning on the transistor; lowering the
drive voltage so as not to allow the voltage of the secondary
battery to exceed the fully charged voltage, and instructing, when
the current value measured by the current measuring unit becomes
smaller than a charge ending current, the drive signal generation
unit to generate a drive signal for turning off the transistor.
10. (canceled)
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The disclosure of Japanese Patent Application No.
2013-010127 filed on Jan. 23, 2013 including the specification,
drawings and abstract is incorporated herein by reference in its
entirety.
BACKGROUND
[0002] The present invention relates to a semiconductor device and
a battery pack and, more particularly, to a technique effective in
controlling, in a semiconductor device for monitoring the condition
of a secondary battery, charging of the secondary battery.
[0003] With portable devices, typically smartphones, rapidly
spreading in recent years, demand for secondary batteries for
driving such portable devices has been rapidly increasing. Since
secondary batteries are required to drive portable devices for a
long period of time, large-capacity secondary batteries have been
developed by many enterprises and organizations. In using a
secondary battery to drive a portable device for a long period of
time, controlling not only the capacity but also the battery level
of the secondary battery is important. To control the battery level
of a secondary battery, a method dependent on detection of the
output voltage of the secondary battery has been in use. Since,
however, it is a characteristic of secondary batteries that their
output voltages are approximately constant over their normal
operating ranges, the battery level of a secondary battery cannot
be accurately controlled by the method in which the output voltage
of the secondary battery is detected. Hence, it has been difficult
to drive a portable device for a long period of time even by using
a large-capacity secondary battery. Under such circumstances, it is
currently a mainstream approach to install a "battery monitoring
system" on the battery pack side to detect the charge/discharge
current of a secondary battery and accurately control the battery
level of the secondary battery. A battery monitoring system
generally includes an FG-IC (fuel gauge IC), a sense resistor, a
MOS transistor for charge control, a MOS transistor for discharge
control, and a protection circuit (e.g. a thermistor, secondary
protection IC, or fuse) and is provided in a battery pack along
with a secondary battery. For example, the FG-IC includes a
microcontroller and has functions for controlling the battery level
of a secondary battery, controlling MOS transistors for charge and
discharge control, and providing primary protection for the
secondary battery. The sense resistor is used to detect the charge
current and discharge current of the secondary battery as voltage
information. The sense resistor for current detection is required
to be of high accuracy and a low resistance. Generally, therefore,
such a sense resistor is not a resistor element which is formed in
the FG-IC using a semiconductor process involving significant
accuracy variation. An external high-accuracy resistor element is
used as such a sense resistor. The protection circuit such as a
thermistor, secondary protection IC, or fuse monitors the condition
of the battery and, if any abnormal condition is detected, stops
charging or discharging of the battery by turning off the MOS
transistor for charge or discharge control so as to prevent the
battery from entering a dangerous condition. Existing techniques
concerning secondary battery protection functions are disclosed,
for example, in Japanese Unexamined Patent Publication Nos.
2005-312140 and Hei 09(1997)-285033 (hereinafter referred to as
Patent Document 1 and Patent Document 2, respectively).
[0004] As is known from the fact that battery monitoring systems
are provided with many protection functions, secondary batteries
are dangerous. For example, if a secondary battery, typically, a
lithium-ion battery is charged by applying an unnecessarily large
current or an excessively high voltage, it may rupture resulting in
a serious accident. Therefore, charging a secondary battery in an
inappropriate manner must be avoided. This is all the more so,
because inappropriate charging of a secondary battery can degrade
the secondary battery resulting in shortening the battery life.
Hence, besides the protection functions provided in the battery
monitoring system as described above, a charge control device like
the one disclosed in Japanese Unexamined Patent Publication No.
2006-311799 is provided on the charger side of the secondary
battery. For example, as such a charge control device, an IC for
charge control compatible with constant-current, constant-voltage
charging (hereinafter referred to as CCCV charging) is widely used.
In a main-stream configuration of ICs for charge control, analog
control is performed as in a DC/DC converter. In CCCV charging, a
battery is charged, while its battery level is low, using a
constant current and, when the battery nears a fully charged state,
the battery is charged in a manner to keep the battery voltage
constant. To perform CCCV charging of a battery, a sense resistor
for current detection is required so that whether the charge
current is at an appropriate level can be monitored. The sense
resistor, like the one provided in the above battery monitoring
system, is also required to be of high accuracy and a low
resistance. Therefore, a relatively expensive external resistor
element is used as such a sense resistor. Also, in many cases, the
charge control device is provided with, in addition to the IC for
charge control and the sense resistor, an external transistor for
charge control which can turn on/off charging.
SUMMARY
[0005] As described above, a system for controlling a secondary
battery requires, in addition to a high-accuracy charge control
device to be provided on the charger side, a battery monitoring
system to be provided on the battery pack side. Such a
high-accuracy charge control device and a battery monitoring system
used to be provided as separate circuits, contributing to a cost
increase. For example, in a system for secondary battery control, a
sense resistor for charge current detection and an external
transistor for charge control used to be provided in each of a
charge control device and a battery monitoring system. This
contributes toward increasing the system cost.
[0006] In each of Patent Documents 1 and 2, a configuration is
disclosed in which a protection circuit for protecting a secondary
battery from over-charging and over-discharging and a charge
control circuit are provided as a unified unit in a battery pack.
The charge control circuit according to Patent Document 1 performs
constant-current charging by linearly controlling the gate voltage
of a MOS transistor for charge control based on the measurement of
the current flowing through a charge current path and performs
constant-voltage charging by linearly controlling the gate voltage
of the MOS transistor for charge control based on the measurement
of the secondary battery voltage. The charge control circuit
according to Patent Document 2 adjusts the charge current of a
secondary battery by PWM-controlling a MOS transistor for charge
control in accordance with a duty factor set from outside.
[0007] The configuration according to Patent Document 1 makes it
possible to reduce overlapping parts such as sense resistors.
However, the configuration in which a protection circuit and a
charge control circuit are unified is not one designed taking into
consideration a battery monitoring system which is provided with a
battery level control function in addition to a protection function
against over-charging and over-discharging like that of an FG-IC.
Hence, the technique according to Patent Document 1 cannot be
applied, as it is, to a battery monitoring system. With the
configuration according to Patent Document 1 being based on the
assumption that the internal circuit of an existing IC for charge
control will be used, applying the technique to a battery
monitoring system will enlarge the circuit size, possibly inviting
a cost increase. On the other hand, the configuration according
Patent Document 2 provided with no sense resistor for charge
current monitoring may make it possible to reduce the number of
parts. However, since the configuration is not designed to perform
PWM control by monitoring the charge current and determining an
optimum duty factor, it is difficult to stably control the charge
current with high accuracy.
[0008] In the following, means for solving the above problems will
be described. Other objects and novel features of the present
invention will become apparent from the description of this
specification and the accompanying drawings.
[0009] A typical embodiment of the present invention disclosed in
the present application is outlined below.
[0010] The semiconductor device according to the present invention
includes: a drive unit which drives a transistor for controlling
the charge current of a secondary battery and which is configured
to be capable of selecting one of different voltages as a drive
voltage for turning on the transistor; and a data processing
control unit which performs program processing. The data processing
control unit generates condition information including information
about the battery level of the secondary battery based on measured
values of the secondary battery voltage and current and adjusts the
charge current of the secondary battery by changing the drive
voltage selection.
[0011] The advantageous effect of the present invention disclosed
in the present application is summarized below.
[0012] The semiconductor device according to the present invention
enables high-accuracy charge control at low cost in a battery
monitoring system for a secondary battery.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] FIG. 1 shows the configuration of a battery pack having an
IC for battery control according to an embodiment of the present
invention.
[0014] FIG. 2 shows the internal configuration of a drive unit
110.
[0015] FIG. 3 is a processing flowchart of CCCV charging.
[0016] FIG. 4 is a processing flowchart of pre-charging.
[0017] FIG. 5 is a processing flowchart of trickle charging.
[0018] FIG. 6 is a processing flowchart of pulse charging.
DETAILED DESCRIPTION
1. Outline of an Embodiment
[0019] First, a typical embodiment of the invention disclosed in
the present application will be outlined. Note that the reference
numerals used in the attached drawings and referred to, in
parentheses, in the following outline description of a typical
embodiment of the present invention merely denote exemplary
constituent elements included in the concepts of possible
constituent elements.
[0020] [1] Semiconductor Device Capable of Monitoring the Battery
Level and Controlling Charging of a Secondary Battery
[0021] A semiconductor device (10) according to a typical
embodiment of the present invention monitors the condition of a
secondary battery (11) and controls charging of the secondary
battery. The semiconductor device includes a voltage measuring unit
(105) for measuring the voltage of the secondary battery, a current
measuring unit (107) for measuring the current of the secondary
battery, a drive unit (110) which drives a transistor (13) for
controlling the charge current (Ich) of the secondary battery, and
a data processing control unit (102) which executes programmed
processing. The data processing control unit generates, based on
measurement values provided by the voltage measuring unit and the
current measuring unit, condition information about the secondary
battery including battery level information and controls the drive
unit. The drive unit provides plural different voltages selectively
usable as a drive voltage for turning on the transistor. The data
processing control unit adjusts the charge current of the secondary
battery by switching the drive voltage selection.
[0022] The above configuration makes it possible to control, in a
battery monitoring system, the battery level of a secondary battery
and charging of the secondary battery. The semiconductor device can
adjust the charge current by changing the magnitude of the gate
drive voltage for the transistor based on the result of measuring
the charge current of the secondary battery, so that charging of
the secondary battery can be controlled with high accuracy. Charge
control for the secondary battery is realized by means of battery
level control for the secondary battery and programmed processing
performed by the data processing control unit. Therefore, compared
with a case in which a separate analog circuit for charge current
feedback control is required, the increase in chip area can be
suppressed. Furthermore, since charging of the secondary battery
can be controlled by programmed processing, charge control is
compatible not only with CCCV charging but also with various other
charging methods. Hence, compared with cases where an analog
circuit is used, flexible charge control can be realized with ease.
The semiconductor device, therefore, makes it possible to perform
charge control with high accuracy on the battery monitoring system
side without requiring any high-accuracy charge control device to
be provided on the charger side. This facilitates reducing the
overall system cost.
[0023] [2] Details of the Drive Unit
[0024] The drive unit included in the semiconductor device
described in [1] above includes a voltage generation circuit (1104,
1105) for generating plural voltages and a voltage selection
circuit (1101) which selects, based on an instruction from the data
processing control unit, one of the voltages generated by the
voltage generation circuit. The drive unit further includes a drive
signal generation unit (1100, 1103) which generates a drive signal
(VGC) for driving the transistor based on an instruction form the
data processing control unit and a level shifting circuit (1102)
which shifts the level of the drive signal generated by the drive
signal generation unit into the voltage selected by the voltage
selection circuit.
[0025] According to the above configuration, drive voltage
switching control by the data processing control unit can be
realized with ease.
[0026] [3] Dividing Reference Voltage
[0027] The semiconductor device described in [2] above further
includes a regulator circuit (104) which generates a reference
voltage (VREF1) based on the voltage of the secondary battery. The
voltage generation circuit includes a first resistor ladder circuit
(1104) for dividing the reference voltage generated by the
regulator circuit into plural voltages.
[0028] According to the above configuration, it is easy to generate
plural voltages out of which one can be selected as the drive
voltage.
[0029] [4] Dividing Secondary Battery Voltage VCC
[0030] In the semiconductor device described in [3] above, the
voltage generation circuit includes a second resistor ladder
circuit (1105) for dividing the input secondary battery voltage
(VCC) into plural voltages.
[0031] According to the above configuration, voltages higher than
the internal supply voltage provided by the regulator circuit can
be generated as voltages selectable as the drive voltage. This
makes it possible to use a drive voltage selected from widely
ranging voltages, so that the charge current variation range can be
widened.
[0032] [5] PWM Control of Charge Current
[0033] The semiconductor device described in any one of [2] to [4]
above further includes a PWM signal generation unit (116) which
generates a PWM signal in accordance with the conditions set by the
data processing control unit. The drive signal generation unit
generates a drive signal corresponding to the pulse period and duty
ratio of the PWM signal generated by the PWM signal generation
unit.
[0034] According to the above configuration, in addition to drive
voltage magnitude selection, charge current magnitude adjustment by
means of changing the duty ratio of the PWM signal is enabled, so
that charge control with increased flexibility is made
possible.
[0035] [6] CCCV Charging
[0036] In the semiconductor device described in any one of [1] to
[5] above, when charging the secondary battery, the data processing
control unit performs processing (S102) in which the charge rate
calculated based on the current value measured by the current
measuring unit and a target charge rate are compared and processing
(S103, S104) in which, when the calculated charge rate is higher
than the target charge rate, the drive voltage is selected such
that the calculated charge rate and the target charge rate are
equalized. The data processing control unit further performs
processing (S106, S107) in which, when, after starting of charging,
the secondary battery voltage has risen to a fully charged voltage,
the drive voltage selection is changed such that the voltage of the
secondary battery does not exceed the fully charged voltage.
Furthermore, when the current value measured by the current
measuring unit becomes smaller than a charge ending current, the
data processing control unit performs processing (S108) in which
the drive signal generation unit is instructed to generate a drive
signal for turning off the transistor.
[0037] According to the above arrangement, CCCV charging can be
easily realized in the battery monitoring system.
[0038] [7] Trickle Charging
[0039] In the semiconductor device described in [1] or [6] above,
when charging the secondary battery, the data processing control
unit performs processing (S302 to S304) in which the drive voltage
is selected such that the current value measured by the current
measuring unit and a target current value for trickle charging are
equalized and processing (S305) in which conditions for the PWM
signal to be generated are set in the PWM signal generation unit.
The data processing control unit further performs processing (S306
to S309) in which, when, after starting of charging, the voltage of
the secondary battery has risen to a first threshold voltage
(VTH1), the PWM signal generation unit is made to stop outputting
the PWM signal and, when the voltage of the secondary battery has
lowered to a second threshold voltage (VTH2) lower than the first
threshold voltage, the PWM signal generation unit is made to
restart outputting the PWM signal.
[0040] According to the above arrangement, trickle charging can be
easily realized.
[0041] [8] Pre-Charging
[0042] In the semiconductor device described in any of [5] to [7]
above, when charging the secondary battery, the data processing
control unit performs processing (S201 to S206) in which, when the
voltage of the secondary battery is lower than a third threshold
voltage (VTH0), the drive voltage is selected such that the current
value measured by the current measuring unit and a target current
value for pre-charging are equalized and processing (S207) in which
conditions for the PWM signal to be generated are set in the PWM
signal generation unit. The data processing control unit further
performs processing (S211) in which, when, after starting of
charging, the voltage of the secondary battery rises, generation of
the drive signal is continued until the voltage of the secondary
battery reaches the third threshold voltage and processing (S210)
in which, when, after starting of charging, the voltage of the
secondary battery does not rise, generation of the drive signal is
stopped.
[0043] According to the above arrangement, pre-charging can be
easily realized in a battery monitoring system. Even though
enabling pre-charging in a battery monitoring system used to
require a transistor for pre-charging having a large on-resistance
to be disposed in parallel with a transistor for charge control,
the present semiconductor device that can adjust the on-resistance
of the transistor for charge control by changing the drive voltage
does not require the transistor for pre-charging.
[0044] [9] Pulse Charging
[0045] In the semiconductor device described in any of [5] to [8]
above, when charging the secondary battery, the data processing
control unit performs processing (S402 to S404) in which the drive
voltage is selected such that the current value measured by the
current measuring unit and a target current value for pulse
charging are equalized and processing (S405) in which conditions
for the PWM signal to be generated are set in the PWM signal
generation unit and the PWM signal generation unit is instructed to
output the PWM signal. The data processing control unit further
performs processing (S407, S408) in which, when, after starting of
charging, the secondary battery voltage has risen to a fully
charged voltage, the PWM signal generation unit is made to stop
outputting the PWM signal and in which the drive signal generation
unit is instructed to generate a drive signal for turning on the
transistor. Furthermore, the data processing control unit performs
processing (S409, S410) in which the drive voltage is lowered so as
not to allow the voltage of the secondary battery to exceed the
fully charged voltage. Still furthermore, the data processing
control unit performs processing (S411) in which, when the current
value measured by the current measuring unit becomes smaller than
the charge ending current, the drive signal generation unit is
instructed to generate a drive signal for turning off the
transistor.
[0046] According to the above arrangement, pulse charging and
constant-voltage charging can be easily realized in a battery
monitoring system.
[0047] [10] Battery Pack with a Battery Monitoring System Capable
of Charge Control
[0048] A battery pack (1) according to a typical embodiment of the
present invention includes a first power terminal (T1), a second
power terminal (T2), and the secondary battery (11) that is coupled
between the first power terminal and the second power terminal and
that includes a single or plural cells. The battery pack further
includes a first transistor (13) which is for controlling the
charge current of the secondary battery and which is disposed in a
current path formed through the secondary battery between the first
power terminal and the second power terminal, a second transistor
(14) for controlling the discharge current of the secondary
battery, a sense resistor (12) disposed in the current path, and
the semiconductor device (10) described in any of [1] to [9] above.
The semiconductor device is enabled by the voltage measuring unit
to measure the voltage across the secondary battery, is enabled by
the current measuring unit to measure the current flowing through
the sense resistor, and is enabled by the drive unit to drive the
first and the second transistor.
[0049] According to the above arrangement, it is possible on the
battery pack side to monitor the battery condition and control
charging of the battery. Therefore, the battery charger to be used
is required to have a simple-structured IC for charge control
capable of constant current output and is not required to be
provided with any high-accuracy, charge control device. Without the
battery charger requiring any high-function IC for charge control,
sense resistor, or transistor for charge control, the number of
parts of the battery charger can be reduced to promote reducing the
overall system cost.
2. Details of Embodiment
[0050] The present embodiment will be described in further detail
below.
[0051] FIG. 1 shows the configuration of a battery pack having an
IC for battery control according to the present embodiment. A
battery pack 1 shown in FIG. 1 is for installation in an electronic
device such as a mobile terminal, for example, a smartphone, a
notebook computer or a power-assisted bicycle. When installed in an
electronic device, the battery pack 1 functions as a power supply
required to operate the electronic circuit of the device. It can be
charged as required by being coupled to a charger 2. Changes in the
condition of the battery included in the battery pack 1 caused when
the battery is charged or discharged are detected in real time by
an IC 10 for battery control. The result of the detection is
transmitted to the electronic device in which the battery pack 1 is
installed. The battery pack 1 includes a battery 11, the IC 10 for
battery control, a sense resistor 12, a MOS transistor 13 for
charging, a MOS transistor 14 for discharging, and other parts such
as a protection circuit, not shown. The battery pack 1 is sealed,
for example, by an insulating resin. The battery pack 1 is provided
with terminals T1, T2, T3, and T4. The terminal T1 is a positive
(+) terminal and the terminal T4 is a negative (-) terminal. The
terminal T2 is a data receiving terminal and the terminal T3 is a
data transmitting terminal. The terminals T1 and T4 of the battery
pack 1 are, for example, coupled to the charger 2 so that the
battery pack 1 can be charged by the charger 2. The charger 2
includes, for example, a power supply unit 20 which generates a DC
voltage based on an AC power supply and a constant-current circuit
210 which generates a constant current based on the DC voltage
supplied by the power supply unit 20. The battery pack 1 is charged
by having a constant current (hereinafter referred to as "input
current IIN") generated by the constant current circuit 210 of the
charger 2 supplied thereto. The battery pack 1 having been charged
is installed in an electronic device, for example, one of those
mentioned above and supplies power, via the terminals T1 and T4, to
the electronic circuit of the electronic device. The terminals T2
and T3 are used for communication between the battery pack 1 and
the electronic device in which the battery pack 1 is installed or
the charger 2.
[0052] The battery 11 is an assembled battery including, for
example, electrically series-coupled cell groups each including
electrically parallel-coupled cells capable of being charged and
discharged. The battery 11 may be, for example, a rechargeable
lithium-ion battery or nickel-hydrogen battery or a fuel battery.
The capacity of the battery 11 can be increased by increasing the
number of cells parallel-coupled in each cell group. The voltage of
the battery 11 can be increased by increasing the number of
series-coupled cell groups. In cases where the power consumption of
the electronic device in which the battery pack 1 is installed is
small, the battery pack 11 may be composed of a single cell.
[0053] The IC 10 for battery control, sense resistor 12, MOS
transistor 13 for charging, and MOS transistor 14 for discharging
make up a battery monitoring system.
[0054] The IC 10 for battery control is a semiconductor device
having a function for monitoring the condition of the battery 11
and outputting information about the detected battery condition
such as a battery level, a protection function for protecting the
battery 11 from stresses such as overcurrent and overvoltage, and a
function for controlling charging and discharging of the battery
11. Namely, the IC 10 for battery control is provided with the
protection function and charge control function in addition to the
known functions of an FG-IC. The IC 10 for battery control is
formed, though not limited to, on a semiconductor substrate such as
a single-crystal silicon substrate using known technology for
semiconductor integrated circuit fabrication. The IC 10 for battery
control is, for example, a microcontroller. An external terminal CG
of the IC 10 for battery control is coupled to the gate terminal of
the MOS transistor 13 for charging. An external terminal DG of the
IC 10 for battery control is coupled to the external terminal of
the MOS transistor 14 for discharging. External terminals ISENS1
and ISENS0 of the IC 10 for battery control are coupled to the
sense resistor 12. The MOS transistor 13 for charging and the MOS
transistor 14 for discharging may be, though not limited to,
n-channel MOS transistors. The sense resistor 12 is a resistive
element for detecting a discharge current of the battery 11. It is
a high-accuracy external resistor. The MOS transistor 13 for
charging, MOS transistor 14 for discharging, and sense resistor 12
are coupled in series to a current path extending from the terminal
T1 to the terminal T4 via the battery 11. Turning on/off of the MOS
transistors 13 and 14 is controlled by the IC 10 for battery
control as being described in detail later. Referring to FIG. 1,
the node coupling the negative pole of the battery 11 and the sense
resistor 12 and the potential of the node are denoted as a first
ground "GND1" and the node coupling the MOS transistor 13 for
charging and the terminal T4 and the potential of the node are
denoted as a second ground "GND2".
[0055] The IC 10 for battery control includes, though not limited
to, a communication circuit 101, a data processing control unit
102, a storage unit 103, a high-accuracy power supply (CREG) 104, a
voltage measuring circuit 105, an oscillator 106, a current
measuring circuit 107, a protection function circuit 108, a power
supply circuit 109, a drive unit 110, a switch circuit 111, and a
PWM signal generation unit (PWM) 116.
[0056] The switch circuit 111 selectively supplies one of plural
analog signals (voltages) to the voltage measuring circuit 105. The
analog signals include, for example, an output signal of a
temperature detection thermistor (not shown) disposed near the
battery 11 in addition to voltages generated, using a voltage
dividing resistor 115, by dividing the voltage VBAT on the positive
side of the battery 11 obtained via the terminal VIN and voltages
generated, using a voltage dividing resistor 114, by dividing the
voltage obtained via the terminal VCC. The reference code "VCC"
represents not only the terminal but also the voltage at the
terminal. The voltage measuring circuit 105 measures the voltage
selected by the switch circuit 111, converts the voltage into a
digital signal and sends it to the data processing control unit
102. For example, the voltage measuring circuit 105 measures the
voltage VBAT on the positive side of the battery 11 using the first
ground GND1 as a reference. The result of voltage measurement is
sent to the data processing control unit 102 after being converted
into a digital signal.
[0057] The current measuring circuit 107 measures the charge and
discharge currents of the battery 11 by monitoring, via the
terminals ISENS0 and ISENS1, the voltage across the sense resistor
12. For example, when the battery 11 starts supplying power to an
electronic device or starts being charged, the current measuring
unit 107 subjects, at a predetermined period, the voltage across
the sense resistor 12 to A/D conversion and generates information
about the measurement of charge or discharge current. The
measurement information thus generated is sent to the data
processing control unit 102.
[0058] The oscillator 106 generates various clock signals for the
digital circuit of the IC 10 for battery control. The clock signals
generated are supplied to various parts of the IC 10 for battery
control. The clock signals include, for example, a clock signal CLK
for operation of the data processing control unit 102 and a
reference clock signal supplied to the PWM signal generation unit
116.
[0059] The PWM signal generation unit (PWM) generates a PWM signal
SPWM based on the reference clock signal supplied from the
oscillator 106. For example, the PWM signal generation unit 116
includes a control register for controlling outputting and stopping
of the PWM signal and a condition setting register for setting
conditions for the PWM signal to be generated. The PWM signal
generation unit 116 generates a desired PWM signal SPWM in
accordance with settings, made by the data processing control unit
102, in the control register and the condition setting register.
The conditions for the PWM signal to be generated include, for
example, a target PWM signal frequency and a target PWM signal duty
ratio.
[0060] The high-accuracy power supply 104 generates constant
voltages of various levels based on the voltage inputted from
outside to the IC 10 for battery control. The high-accuracy power
supply 104 is, for example, a regulator circuit which generates
voltages based on the bandgap voltage of silicon. The high-accuracy
power supply 104 is coupled with an external stabilizing capacitor
17 via a terminal CAP. The voltages generated by the high-accuracy
power supply 104 are supplied to various parts as voltages with
relatively high stability, for example, a voltage supplied to a
voltage dividing resistor or a reference voltage for a comparator
(comparison circuit). To be concrete, the high-accuracy power
supply 104 generates a reference voltage VREF1 (1.7 V, for example)
for generating a drive voltage for the MOS transistor 13 for
charging being described later in addition to a reference voltage
VREF2 for an overvoltage detection circuit 113, a reference voltage
VREF3 for an overcurrent detection circuit 112, and reference
voltages for the voltage measuring circuit 105 and the current
measuring circuit 107.
[0061] The power supply circuit 109 obtains the voltage supplied
from the battery 11 via the external terminal VCC and generates, by
stepping down the voltage, operation voltages for the principal
circuits of the IC 10 for battery control.
[0062] The protection function circuit 108 is a function unit for
protecting the battery 11 from stresses such as overvoltage and
overcurrent. The protection function circuit 108 includes, for
example, the overcurrent detection circuit 112 and the overvoltage
detection circuit 113. The overcurrent detection circuit 112
obtains the terminal voltage of the sense resistor 12 via the
terminals ISENS0 and ISENS1 and, based on the voltage obtained,
detects an overcurrent state of the battery 11. The overvoltage
detection circuit 113 divides, using the voltage dividing resistor
114, the voltage inputted via the terminal VCC and, based on the
divided voltage, detects an overvoltage state of the battery 11. A
result PRC of overcurrent detection by the overcurrent detection
circuit 112 and a result PRV of overvoltage detection by the
overvoltage detection circuit 113 are sent to the drive unit
110.
[0063] The drive unit 110 controls turning on/off of the MOS
transistor 13 for charging and MOS transistor 14 for discharging
based on the control signals from the data processing control unit
102, results of overcurrent and overvoltage detection by the
overcurrent detection circuit 112 and overvoltage detection circuit
113, and the PWM signal SPWM from the PWM signal generation unit
116. Details of the drive unit 110 will be described later.
[0064] The MOS transistor 13 for charging is turned on to charge
the battery 11 and is turned off to stop charging of the battery
11. For trickle charging and pulse charging being described later,
turning on/off of the MOS transistor 13 for charging is controlled
at a predetermined pulse period and a duty ratio. When the MOS
transistor 13 for charging is off, the battery 11 cannot be charged
but it can discharge via a parasitic diode 15 coupled in parallel
to the MOS transistor 13 for charging.
[0065] The MOS transistor 14 for discharging is turned on to
discharge the battery 11 and is turned off to stop discharging of
the battery 11. When the MOS transistor 14 for discharging is off,
the battery 11 cannot be discharged but it can be charged via a
parasitic diode 16 coupled in parallel to the MOS transistor 14 for
discharging.
[0066] The communication circuit 101 transmits, based on
instructions from the data processing control unit 102, data TxD to
outside via the terminal T3 of the IC 10 for battery control. The
communication circuit 101 also receives data RxD from outside via
the terminal T2 of the IC 10 for battery control and transmits the
received data to the data processing control unit 102. For example,
information about the condition of the battery 11 generated by the
data processing control unit 102 including, for example, battery
level information is transmitted to the above-mentioned electronic
circuit via the terminal T3, whereas various control data about
charging/discharging of the battery 11 is transmitted from the
electronic circuit to the IC 10 for battery control via the
terminal T2. As long as the communication circuit 101 enables data
transmission and reception, the configuration thereof and the
communication method used thereby are not limited to particular
ones. For example, the communication circuit 101 may perform either
wireless communication or wired communication. Even though, in FIG.
1, for convenience sake, one each terminal for transmission and
reception is shown, there may be more terminals for transmission
and for reception. Namely, the number of communication terminals is
not defined.
[0067] The storage unit 103 is a non-volatile storage unit for
storing data. It is composed of, for example, a flash memory.
Various information is pre-stored in the storage unit 103. Such
information includes, for example, information used to control
charging of the battery 11, being described later (e.g. battery
level information, target charge rate information, and trickle
charge current information) in addition to information about
characteristics of the battery 11, the number of parallel-coupled
cells per cell group, the number of series-coupled cell groups, and
information about differences between individual cells. Also, a
program for making the data processing control unit 102 carry out
various arithmetic operations and trimming information for the IC
10 for battery control is pre-stored in the storage unit 103.
Furthermore, the results of arithmetic operations performed by the
data processing control unit 102 can be stored in the storage unit
103. The IC 10 for battery control may include more than one
storage unit 103. Namely, the above information may be divided for
storage in plural storage units 103 or may be stored together in a
single storage unit 103. The storage unit configuration and method
of storage are not particularly defined.
[0068] The data processing control unit 102 is a program processing
device which executes various operations in accordance with the
program stored in the storage unit 103. The data processing control
unit 102 includes, for example, a CPU and a RAM. Based on the
program stored in the storage unit 103 and the results of
measurement made by the voltage measuring circuit 105 and current
measuring circuit 107, the data processing control unit 102
performs predetermined arithmetic processing for detecting the
battery condition and generates information about the condition of
the battery 11. The information about the battery condition
includes, for example, FCC (full charge capacity) information
indicating the battery capacity available from the battery 11 in a
fully charged state by allowing the battery to be discharged at a
predetermined discharge rate to a discharge ending voltage, RC
(remaining capacity) information indicating the remaining capacity
of the battery 11, and SOC (state of charge) information indicating
the state of charging of the battery 11. The data processing
control unit 102 transmits the information about the battery
condition generated by the above processing to outside via the
communication circuit 101 and stores the information in the storage
unit 103 as required.
[0069] Furthermore, the data processing control unit 102 controls
charging of the battery 11 by controlling the drive unit 110 based
on the program stored in the storage unit 103 and the results of
measurement made by the voltage measuring circuit 105 and current
measuring circuit 107. To be concrete, the data processing control
unit 102 adjusts the charge current of the battery 11 by
controlling the MOS transistor 13 for charging via the drive unit
10 in accordance with the program stored in the storage unit 103
and, thereby, realizes charge control compatible with, for example,
CCCV charging, trickle charging, pre-charging, and pulse charging.
How the drive unit 110 is controlled for charging of the battery 11
and the internal configuration of the drive unit 110 will be
described in detail below.
[0070] FIG. 2 shows the internal configuration of the drive unit
110. For the convenience of description, out of the functional
units of the battery pack 1, only those related with controlling of
the drive unit 110 are shown in FIG. 2.
[0071] As shown in FIG. 2, the drive unit 110 includes a drive
signal generation unit 1107, a level shift circuit (LVSFT) 1102, a
voltage selection circuit (VSEL_CIR) 1101, and resistor ladder
circuits 1104 and 1105 as voltage generation circuits.
[0072] The drive signal generation unit 1107 includes, for example,
a logic circuit (LGC_CIR) 1100 and pre-driver circuits 1103 and
1106. The logic circuit 1100 generates control signals for
instructing turning on/off of the MOS transistor 13 for charging
and MOS transistor 14 for discharging, respectively, based on the
control signals from the data processing control unit 102, the
detection result PRC from the overcurrent detection circuit 112,
the detection result PRV from the overvoltage detection circuit
113, and the PWM signal SPWM. These control signals are digital
signals (e.g. high-level voltage VCC and low-level voltage
GND2).
[0073] The pre-driver circuit 1106 generates a drive signal VGD for
driving the MOS transistor 14 for discharging based on a control
signal for instructing turning on/off of the MOS transistor 14 for
discharging outputted from the logic circuit 1100. The drive signal
VGD is outputted from the terminal DG and is supplied to the gate
terminal of the MOS transistor 14 for discharging.
[0074] The pre-driver circuit 1103 generates a drive signal VGC for
driving the MOS transistor 13 for charging based on a control
signal for turning on/off the MOS transistor 13 for charging
outputted from the logic circuit 1100. The drive signal VGC is
supplied to the level shift circuit 1102.
[0075] The resistor ladder circuit 1104 generates plural voltages
VREF_0 to VREF_n (n being an integer of 1 or larger) by
resistor-dividing the reference voltage FREF1. When the reference
voltage VREF1 is 1.7 V, plural voltages VREF_0 to VREF_n not
exceeding 1.7 V can be generated.
[0076] The resistor ladder circuit 1105 generates plural voltages
VCC_0 to VCC_m (m being an integer of 1 or larger) by
resistor-dividing the voltage VCC. When the maximum value of the
voltage VCC is, for example, 2.7 V, plural voltages VCC_0 to VCC_m
not exceeding 2.7 V can be generated.
[0077] The voltage selection circuit 1101 receives voltages VREF_0
to VREF_n and VCC_0 to VCC_m and outputs one of the voltages
selected based on a selection signal SEL from the data processing
control unit 102. The voltage selection circuit 1101 includes,
though not limited to, plural switch circuits which are turned
on/off under control by the selection signal SEL. The voltage VSEL
selected by the voltage selection circuit 1101 is supplied to the
level shift circuit 1102.
[0078] The level shift circuit 1102 level-shifts the drive signal
VGC supplied from the pre-driver circuit 1103 to the output voltage
VSEL of the voltage selection circuit 1101. For example, the drive
signal VGC with a high level VCC and a low level GND2 is
level-shifted into a signal with a high level VSEL and a low level
GND2. The level-shifted drive signal VGC is outputted from the
terminal CG and is supplied to the gate terminal of the MOS
transistor 13 for charging.
[0079] When discharging the battery 11, in accordance with control
signals from the data processing control unit 102, the logic
circuit 1100 outputs a control signal for turning off the MOS
transistor 13 for charging and also outputs a control signal for
turning on the MOS transistor 14 for discharging. At this time, the
drive signal VGD for the MOS transistor 14 for discharging is set
to a high level (voltage VCC) and the drive signal VGC for the MOS
transistor 13 for charging is set to a low level (GND2). When,
during discharging, a short-circuit current is detected by the
overcurrent detection circuit 112, the logic circuit 1100 outputs a
control signal for turning off the MOS transistor 14 for
discharging. This sets the drive signal VGD to the low level (GND2)
causing the discharge current to be shut off.
[0080] When charging the battery 11, basically, in accordance with
control signals from the data processing control unit 102, the
logic circuit 1100 outputs a control signal for turning on the MOS
transistor 13 for charging and also outputs a control signal for
turning off the MOS transistor 14 for discharging. When, during
charging, an overvoltage state or an overcurrent state is detected
by the overcurrent detection circuit 112 or the overvoltage
detection circuit 113, the logic circuit 1100 outputs a control
signal for turning off the MOS transistor 13 for charging. This
sets the drive signal VGC to low level (GND2) causing charging of
the battery 11 to be discontinued.
[0081] For charging of the battery 11, the charge current is
adjusted by a combination of signal level switching control for the
drive signal VGD supplied to the MOS transistor 13 for charging and
PWM control for the MOS transistor 13 for charging.
[0082] In signal level switching control for the drive signal VGD,
switching made by the data processing control unit 102 of the
selection signal SEL changes the output voltage VSEL of the voltage
selection circuit 1101, causing the magnitude of the drive signal
VGD used to turn on the MOS transistor 13 for charging to be
changed. This causes the on-resistance of the MOS transistor 13 for
charging to be adjusted, so that the charge current of the battery
11 can be adjusted. The voltage selection circuit 1101 can select a
voltage out of the voltages VREF_0 to VREF_n generated by
resistor-dividing the reference voltage VREF1 plus the voltages
VCC_0 to VCC_m generated by resistor-dividing the voltage VCC, so
that the range of the gate drive voltage that can be supplied to
the gate of the MOS transistor 13 for charging can be widened. For
example, when a gate drive voltage for the MOS transistor 13 for
charging is to be generated based on the reference voltage VREF
(e.g. 1.7 V) supplied from the high-accuracy power supply 14, the
gate drive voltage cannot exceed the reference voltage VREF1.
Generating the gate drive voltage based on the voltage VCC (e.g.
2.7 V to 4.2 V), however, allows the gate drive voltage to exceed
the reference voltage REF1 (1.7 V). Thus, the charge current
adjustment range can be widened.
[0083] In PWM control for the MOS transistor 13 for charging,
first, the data processing control unit 102 sets desired conditions
(pulse period and duty ratio) for the PWM signal to be generated in
the PWM signal generation unit 116. In accordance with the
conditions thus set, the PWM signal generation unit 116 generates a
PWM signal SPMW. The PWM signal SPMW is inputted to the logic
circuit 1100. The logic circuit 1100 generates a control signal
which alternates between a high level and a low level in accordance
with the pulse period and duty ratio of the PWM signal. In
accordance with the control signal, the pre-driver circuit 1103
generates the drive signal VGC (pulse signal). The level shift
circuit 1102 shifts the high level voltage of the drive signal VGC
from "VCC" to "VSEL". The drive signal VGC is then supplied to the
gate terminal of the MOS transistor 13 for charging. In this way,
the MOS transistor 13 for charging is PWM-controlled causing the
charge current of the battery 11 to be an intermittent current. The
average value of the PWM-controlled charge current can be changed
by adjusting the pulse period and duty ratio of the PWM signal
SPWM.
[0084] Charge control performed by the IC 10 for battery control
will be concretely described below in terms of CCCV charging,
pre-charging, trickle charging, and pulse charging.
[0085] First, an example case of CCCV charging will be described.
In CCCV charging, as described in the foregoing, a battery is
charged by a constant current while the battery level is low and,
when the battery nears a fully charged state, charging is adjusted
so as to make the battery voltage constant.
[0086] FIG. 3 is a processing flowchart of CCCV charging. In the
present example, the initial value of the output voltage VSEL of
the voltage selection circuit 1101 is assumed to be other than a
minimum voltage (e.g. VREF_0).
[0087] First, when an input current IIN for charging the battery 11
is inputted from the charger 2, the data processing control unit
102 starts charging the battery 11 by turning on the transistor 13
for charging (S101). To be concrete, the data processing unit 102
instructs the voltage selection circuit 1101 to output the
initially set voltage VSEL and the logic circuit 1100 to turn on
the MOS transistor 13 for charging. Namely, the data processing
unit 102 instructs outputting of a high-level (VCC) drive signal
VGC. As a result, a gate drive voltage (DC voltage) equal to the
voltage VSEL selected by the voltage selection circuit 1101 is
supplied to the gate terminal of the MOS transistor 13 for
charging. Next, the data processing control unit 102 calculates the
charge rate based on the charge current Ich measured by the current
measuring circuit 107 and determines whether or not the charge rate
is higher than a target value (S102). The charge rate is an index
represented by Ich/Cbat, where Ich is a charge current (A) and Cbat
is a battery capacity (Ah), and is usually represented in units of
C, for example, 1C and 0.5C. For example, a charge rate of 1C
represents the amount of current that can charge/discharge the
whole capacity of the battery in an hour. Information about a
target charge rate for CCCV charging is pre-stored, for example, in
the storage unit 103 to be read by the data processing control unit
102 when making the above determination.
[0088] The processing in step S102 will be concretely described
below. The data processing control unit 102 calculates the charge
rate by calculating ICH/Cbat based on the value of the charge
current Ich measured by the current measuring circuit 107 and the
value of the battery capacity Cbat of the battery 11 read from the
storage unit 103. The data processing control unit 102 then
determines whether or not the calculated charge rate is larger than
the target charge rate for CCCV charging read from, for example,
the storage unit 103. When the calculated charge rate is higher
than the target charge rate, the data processing control unit 102
changes the selection signal SEL so as to reduce the output voltage
VSEL of the voltage selection circuit 1101 (S103). The data
processing control unit 102 then calculates the charge rate again
based on the value of the charge current Ich measured by the
current measuring circuit 107 and determines whether or not the
calculated charge rate equals the target charge rate (S104). When
it is determined that the calculated charge rate does not equal the
target value, the data processing control unit 102 again changes
the selection signal SEL so as to have the next lower voltage VSEL
outputted from the voltage selection circuit 1101 for comparison
with the target value. This process is repeated (so as to obtain a
calculated charge rate closer to the target value) until the last
calculated charge rate equals the target value (S103 and S104).
When it is determined that the last calculated charge rate equals
the target value, charging of the battery 11 is continued at the
charge rate until the value of the voltage VBAT measured by the
voltage measuring circuit 105 reaches a fully charged voltage
(S105). In this way, constant-current charging of the battery 11 is
carried out.
[0089] Subsequently, when the voltage VBAT of the battery 11
reaches a fully charged voltage, control for switching from
constant-current charging to constant-voltage charging is started.
To be concrete, the data processing control unit 102 reduces the
charge current Ich by switching the selection signal SEL so as to
reduce the output voltage VSEL of the voltage selection circuit
1101 (S106). The data processing control unit 102 then determines
whether or not the voltage VBAT of the battery 11 is higher than
the fully charged voltage (S107). The fully charged voltage is an
upper-limit voltage to which the battery can be charged.
Information about the fully charged voltage is pre-stored, for
example, in the storage unit 103 to be read by the data processing
unit 102 when making the above determination. When the voltage VBAT
is higher than the fully charged voltage, the data processing
control unit 102 again switches the selection signal SEL so as to
gradually reduce the voltage VBAT. This process is repeated until
the voltage VBAT equals or is lower than the fully charged voltage
(S106 and S107).
[0090] When the voltage VBAT equals or becomes lower than the fully
charged voltage, the data processing control unit 102 determines
whether or not the value of the charge current Ich measured by the
current measuring circuit 107 is larger than a charge ending
current (S108). The charge ending current represents a charge
current value to be a reference for determining whether charging
has been completed. Information about the charge ending current is
pre-stored, for example, in the storage unit 103 to be read by the
data processing control unit 102 when making the above
determination. When the charge current Ich is larger than the
charge ending current, processing returns to step S107 to continue
constant-voltage charging. Subsequently, when the value of the
charge current Ich equals or becomes smaller than the charge ending
current, the data processing control unit 102 determines that
charging of the battery has been completed and turns off the MOS
transistor 13 for charging so as to end the charging.
[0091] Next, pre-charging will be described. In pre-charging, a
battery is charged at a charge rate lower than a normal charge rate
(the charge rate for CCCV charging). Generally, a battery is
pre-charged when its voltage has lowered to a level much lower than
its normal voltage, for example, after being left unused for an
extended period of time. Such a battery is pre-charged at a low
charge rate for safety as a means of determining whether or not the
battery is rechargeable.
[0092] FIG. 4 is a processing flowchart of pre-charging. First, the
data processing control unit 102 determines whether or not the
voltage VBAT of the battery 11 measured by the voltage measuring
circuit 105 is equal to or higher than the normally chargeable
voltage VTH0 (S201). The normally chargeable voltage VTH0
represents a battery voltage used as a reference for determining
whether or not the battery can be charged in a normal manner (e.g.
by CCCV charging or by pulse charging). Information about the
normally chargeable voltage VTH0 is pre-stored, for example, in the
storage unit 103 to be read by the data processing control unit 102
when making the above determination.
[0093] When the voltage VBAT is equal to or higher than the
normally chargeable voltage VTH0, processing advances to a step for
starting normal charging (e.g. CCCV charging or pulse charging).
When the voltage VBAT is smaller than the normally chargeable
voltage VTH0, the data processing control unit 102 sets the voltage
VSEL outputted by the voltage selection circuit 106 to a minimum
voltage (S202). The data processing control unit 102 next
determines whether or not the charger 2 is coupled to the battery
11 (S203). With the charger 2 coupled to the battery 11, when the
input current IIN for charging the battery 11 is inputted from the
charger 2, the data processing control unit 102 turns on the
transistor 13 for charging to start charging the battery 11 (S204).
To be concrete, the data processing control unit 102 instructs the
voltage selection circuit 1101 to output the voltage VSEL at a
minimum level and the logic circuit 1100 to generate the drive
signal VGC of a high level (VCC). As a result, a gate drive voltage
equal to the voltage VSEL (minimum voltage) selected by the voltage
selection circuit 1101 is supplied to the gate terminal of the MOS
transistor 13 for charging.
[0094] Next, the data processing control unit 102 determines
whether or not the charge current Ich measured by the current
measuring circuit 107 is smaller than a pre-charge current IPRCH
(S205). The pre-charge current IPRCH represents a target charge
current value for pre-charging (a maximum charge current value).
Information about the pre-charge current IPRCH is pre-stored, for
example, in the storage unit 103 to be read by the data processing
control unit 102 when making the above determination.
[0095] When the charge current Ich is smaller than the pre-charge
current IPRCH, the data processing control unit 102 switches the
selection signal SEL to increase the output voltage VSEL of the
voltage selection circuit 1101 (S206). As a result, the charge
current Ich increases. Subsequently, the data processing control
unit 102 repeats increasing the output voltage VSEL of the voltage
selection circuit 1101 until the charge current Ich measured by the
current measuring circuit 107 equals or exceeds the pre-charge
current IPRCH (S205, S206). When the measured charge current Ich
equals or exceeds the pre-charge current IPRCH, the data processing
control unit 102 sets conditions for the PWM signal to be generated
in the PWM signal generation unit 116 and instructs the PWM signal
generation unit 116 to output the PWM signal SPWM (S207).
Information about the conditions (e.g. pulse period and duty ratio)
for the PWM signal to be generated at the time of pre-charging is
pre-stored, for example, in the storage unit 103. The data
processing control unit 102 reads the pre-stored information from
the storage unit 103 and sets the information in the PWM signal
generation unit 116. As a result, the charge current starts being
PWM-controlled (S208). To be concrete, the logic circuit 1100
included in the drive unit 110 generates the drive signal VGC in
accordance with the pulse period and duty ratio of the PWM signal
SPWM and, thereby, periodically turns on/off the MOS transistor 13
for charging, causing the charge current to be intermittently
controlled.
[0096] After a predetermined period of time, the data processing
control unit 102 stops PWM-controlling the charge current (S209).
To be concrete, the data processing control unit 102 instructs the
PWM signal generation unit 116 to stop outputting the PWM signal
SPWM and the logic circuit 1100 to output the drive signal VGC of a
low level (GND2). Next, the data processing control unit 102
determines whether or not the voltage VBAT of the battery 11
measured by the voltage measuring circuit 107 has risen since the
charging was started (S210). When it is determined that the voltage
VBAT has not risen, the data processing control unit 102 determines
that the battery 11 cannot be charged and stops charging the
battery 11. When the voltage VBAT is determined to have risen, the
data processing control unit 102 determines whether or not the
voltage VBAT is equal to or higher than the normally chargeable
voltage VTH0 (S211). When the voltage VBAT is lower than the
normally chargeable voltage VTH0, processing returns to step S208
to restart PWM-control of the charge current. Charging of the
battery 11 is continued until the voltage VBAT becomes equal to or
higher than the normally chargeable voltage VTH0. When the voltage
VBAT becomes equal to or higher than the normally chargeable
voltage VTH0, the battery 11 is determined to be chargeable in a
normal manner. Processing then advances to a step for starting
normal charging, for example, the above-described CCCV charging or
the pulse charging being described later. Pre-charging is realized
as described above.
[0097] To realize pre-charging of a battery, it has been necessary
to use a transistor for pre-charging having a large on-resistance
coupled in parallel with a transistor for charge control. The IC 10
for battery control makes it possible to adjust the on-resistance
of the MOS transistor 13 for charging by changing the selection of
the voltage VSEL by the voltage selection circuit 1101, so that no
transistor for pre-charging is required.
[0098] Next, trickle-charging will be described. The trickle
charging is for maintaining a fully charged state of a battery by
charging the battery with a very small current after the battery is
fully charged.
[0099] FIG. 5 is a processing flowchart of trickle charging. In the
following, an example case in which trickle charging is started
after completion of CCCV charging will be described. In the present
example, it is assumed that the voltage selected when CCCV charging
is completed has been set as the initial value of the output
voltage VSEL of the voltage selection circuit 1101.
[0100] First, when the input current IIN for charging the battery
11 is inputted, the data processing control unit 102 turns on the
transistor 13 for charging, thereby causing charging of the battery
11 to be started (S301). To be concrete, the data processing
control unit 102 instructs the voltage selection circuit 1101 to
start outputting the voltage VSEL selected when the CCCV charging
was completed and the logic circuit 1100 to generate the drive
signal VGC of a high level (VCC). As a result, a gate drive voltage
(DC voltage) equal to the voltage VSEL selected by the voltage
selection circuit 1101 is supplied to the gate terminal of the MOS
transistor 13 for charging.
[0101] The data processing control unit 102 determines whether or
not the charge current Ich measured by the current measuring
circuit 107 is larger than a trickle charge current ITRCH (S302).
The trickle charge current ITRCH represents a target value (a
maximum charge current value) of the charge current for trickle
charging. Information about the trickle charge current ITRCH is
pre-stored, for example, in the storage unit 103 to be read by the
data processing control unit 102 when making the above
determination. When the charge current Ich is not larger than the
trickle charge current ITRCH, processing skips to step S305, being
described later, for setting conditions for the PWM signal to be
generated. Since trickle charging is made with a very small
current, the charge current Ich rarely becomes smaller than the
trickle charge current ITRCH.
[0102] When the charge current Ich is larger than the trickle
charge current ITRCH, the data processing control unit 102 switches
the selection signal SEL so as to reduce the output voltage VSEL of
the voltage selection circuit 1101 (S303). As a result, the charge
current Ich is reduced. Subsequently, the data processing control
unit 102 repeats decreasing in stages the output voltage VSEL of
the voltage selection circuit 1101 until the charge current Ich
measured by the current measuring circuit 107 becomes equal to or
smaller than the trickle charge current ITRCH (S303, S304). When
the measured charge current Ich becomes equal to or smaller than
the trickle charge current ITRCH, the data processing control unit
102 sets conditions for the PWM signal to be generated in the PWM
signal generation unit 116 and instructs the PWM signal generation
unit 116 to output the PWM signal SPWM (S305). To be concrete,
information about the conditions (e.g. pulse period and duty ratio)
to be set when trickle-charging a battery and to be met by the PWM
signal to be generated is pre-stored, for example, in the storage
unit 103. The data processing control unit 102 reads the
information pre-stored in the storage unit 103 and sets the
information in the PMW signal generation unit 116. As a result, the
charge current starts being PWM-controlled (S306). To be concrete,
the logic circuit 1100 included in the drive unit 110 generates the
drive signal VGC in accordance with the pulse period and duty ratio
of the PWM signal SPWM and, thereby, periodically turns on/off the
MOS transistor 13 for charging, causing the charge current to be
intermittently controlled.
[0103] Subsequently, the data processing control unit 102 continues
PWM-controlling the charge current until the voltage VBAT of the
battery 11 measured by the voltage measuring circuit 105 reaches or
exceeds the trickle-charge ending voltage VTH1 (S307). The
trickle-charge ending voltage VTH1 represents a charge voltage
value used as a reference for stopping the trickle charging.
Information about the trickle-charge ending voltage VTH1 is
pre-stored, for example, in the storage unit 103 to be read by the
data processing control 102 when making the above
determination.
[0104] When the voltage VBAT reaches or exceeds the trickle-charge
ending voltage VTH1, the data processing control unit 102 causes
PWM control of the charge current to be stopped (S308). To be
concrete, the data processing control unit 102 instructs the PWM
signal generation unit 116 to stop outputting the PWM signal SPWM
and the logic circuit 1100 to output the drive signal VGC of a low
level (GND2). Subsequently, monitoring the voltage VBAT of the
battery 11 measured by the voltage measuring circuit 107, the data
processing control unit 102 determines whether or not the voltage
VBAT is equal to or lower than a trickle-charge starting voltage
VTH2 (S309). The trickle-charge starting voltage VTH2 represents a
charge voltage value used as a reference for restarting trickle
charging. Information about the trickle-charge starting voltage
VTH2 is pre-stored, for example, in the storage 103 to be read by
the data processing control unit 102 when making the above
determination.
[0105] When the voltage VBAT is larger than the trickle-charge
starting voltage VTH2, the data processing control unit 102
continues monitoring the voltage VBAT of the battery 11 in a state
with charging stopped (S309). When the voltage VBAT is equal to or
lower than the trickle-charge starting voltage VTH2, processing
returns to step S306 causing the data processing control unit 102
to restart PWM-controlling the charge current. Subsequently, steps
S306 to S309 are performed repeatedly so as to keep the battery 11
in a fully charged state.
[0106] Next, pulse charging will be described. In pulse charging,
the charge current is set to be larger than the charge current for
CCCV charging, and the charge current is intermittently controlled
(pulse-controlled) so as to complete charging in a shorter time
than required for normal CCCV charging.
[0107] FIG. 6 is a processing flowchart of pulse charging. In the
present example, the initial value of the output voltage VSEL of
the voltage selection circuit 1101 is assumed to be other than a
minimum voltage (e.g. VREF_0).
[0108] First, when the input current IIN is inputted from the
charger 2, the data processing control unit 102 turns on the
transistor 13 for charging, thereby causing charging of the battery
11 to be started (S401). To be concrete, the data processing
control unit 102 instructs the voltage selection circuit 1101 to
start outputting the initial voltage VSEL and the logic circuit
1100 to output the drive signal VGC of a high level (VCC). As a
result, a drive voltage (DC voltage) equal to the voltage VSEL
selected by the voltage selection circuit 1101 is supplied to the
gate terminal of the MOS transistor 13 for charging.
[0109] The data processing control unit 102 determines whether or
not the charge current Ich measured by the current measuring
circuit 107 is larger than the pulse-charge current IPLCH (S402).
The pulse-charge current IPLCH represents a target charge current
value (a maximum charge current) for pulse charging. Information
about the pulse-charge current IPLCH is pre-stored, for example, in
the storage unit 103 to be read by the data processing control unit
102 when making the above determination.
[0110] When the charge current Ich is not larger than the
pulse-charge current IPLCH, processing skips to step S405, being
described later, for setting conditions for the PWM signal to be
generated. When the charge current Ich is larger than the trickle
charge current ITRCH, the data processing control unit 102 switches
the selection SEL to reduce the output voltage VSEL of the voltage
selection circuit 1101 (S403). As a result, the charge current Ich
is reduced. Subsequently, the data processing control unit 102
repeats decreasing in stages the output voltage VSEL of the voltage
selection circuit 1101 until the charge current Ich measured by the
current measuring circuit 107 becomes equal to or smaller than the
pulse-charge current IPLCH (S403, S404). When the charge current
Ich becomes equal to or smaller than the pulse-charge current
IPLCH, the data processing control unit 102 sets conditions for the
PWM signal to be generated in the PWM signal generation unit 116
and instructs the PWM signal generation unit 116 to output the PWM
signal SPWM (S405). To be concrete, information about the
conditions (e.g. pulse period and duty ratio) for the PWM signal to
be generated is pre-stored in the storage unit 103. The data
processing control unit 102 reads the information pre-stored in the
storage unit 103 and sets the information in the PMW signal
generation unit 116. As a result, the charge current starts being
PWM-controlled (S406). To be concrete, the logic circuit 1100
included in the drive unit 110 generates the drive signal VGC in
accordance with the pulse period and duty ratio of the PWM signal
SPWM and, thereby, periodically turns on/off the MOS transistor 13
for charging, causing the charge current to be intermittently
controlled.
[0111] Subsequently, the data processing control unit 102 continues
PWM-controlling the charge current until the voltage VBAT of the
battery 11 measured by the voltage measuring circuit 105 reaches a
fully charged voltage (S407). When the voltage VBAT reaches or
exceeds the fully charged voltage, the data processing control unit
102 stops PWM-controlling the charge current (S408). To be
concrete, the data processing control unit 103 instructs the PWM
signal generation unit 116 to stop outputting the PWM signal SPWM
and the logic circuit 1100 to output the drive signal VGC of a low
level (GND2). The data processing control unit 102 then starts
control for switching from charging by PWM control (pulse charging)
to constant-voltage charging. To be concrete, the data processing
control unit 102 reduces the charge current Ich by switching the
selection signal SEL so as to reduce the output voltage VSEL of the
voltage selection circuit 1101 (S409). The data processing control
unit 102 determines whether or not the voltage VBAT of the battery
11 is higher than the fully charged voltage (S410). When the
voltage VBAT is higher than the fully charged voltage, the data
processing unit 104 repeats reducing, in stages, the output voltage
VSEL of the voltage selection circuit 1101 until the voltage VBAT
becomes equal to or lower than the fully charged voltage (S409 and
S410).
[0112] When the voltage VBAT becomes equal to or lower than the
fully charged voltage, the data processing control unit 102
determines whether or not the value of the charge current Ich
measured by the current measuring circuit 107 is larger than the
charge ending current (S411). When the charge current Ich is larger
than the charge ending current, processing returns to step S410 to
continue constant-voltage charging. When the value of the charge
current Ich becomes equal to or smaller than the charge ending
current, the data processing control unit 102 determines that
charging has been completed and turns off the MOS transistor 13 for
charging, thereby stopping the charging.
[0113] As described above, according to the IC 10 for battery
control of the present embodiment, in addition to battery level
control for the battery 11, charging of the battery 11 can also be
controlled. Also, the IC 10 for battery control can adjust the
charge current by changing the magnitude of the gate drive voltage
supplied to the MOS transistor 13 for charging based on the result
of measurement of the charge current of the battery 11, so that
high-accuracy charge control is enabled. The IC 10 for battery
control adjusts the charge current not by linearly controlling the
gate drive voltage of the MOS transistor for charging while
monitoring the charge current. The IC 10 for battery control
optimizes the charge current by changing, in stages, the gate drive
voltage for the MOS transistor for charging in accordance with
program processing by the CPU. Namely, according to the IC 10 for
battery control, charging of a battery can be controlled by
monitoring the condition of the battery and program processing, so
that, compared with cases in which a known FG-IC circuit
configuration including an analog circuit for charge control is
used, an increase in the chip area can be inhibited. Since charging
is controlled by program processing, various types of charging such
as trickle charging, pre-charging, and pulse charging can be
controlled in addition to the CCCV charging. Therefore, compared
with cases in which charging is controlled using an analog circuit,
flexible charge control can be easily realized. Also, with the IC
10 for battery control included in the battery pack 1, the
condition of the battery can be monitored and charging of the
battery can be controlled both on the battery pack side. Therefore,
when an IC for charge control with a simple configuration capable
of constant-current output like the above charger 2 is available,
charge control is enabled without requiring any high-accuracy
charge control device on the charger side. Namely, it is not
necessary to provide on the charger side any high-function IC for
charge control or sense resistor or any transistor for charge
control. This makes it possible to reduce the number of parts
required and reduce the overall system cost.
[0114] Even though the invention made by the present inventors has
been concretely described based on an embodiment, the invention is
not limited to the embodiment and can be modified in various ways
within the scope of the invention.
[0115] For example, the voltage generation circuit included in the
drive unit 110 is not limited to the resistor ladder circuits 1104
and 1105 and may be configured differently as long as plural
voltages can be generated. Even though, in the configuration of the
above embodiment, the pre-driver circuit 1103 is provided between
the logic circuit 1100 and the level shift circuit 1102, a
different circuit configuration may be used as long as the control
signal outputted from the logic circuit 1100 can be supplied, after
being shifted to the level of the voltage VSEL, to the gate
terminal of the MOS transistor 13 for charging. Also, the IC 10 for
battery control formed on a single chip in the above embodiment is
not limited to the single-chip configuration. Namely, it may have a
multi-chip configuration.
* * * * *