U.S. patent application number 14/779664 was filed with the patent office on 2016-02-18 for manufacturing method of semiconductor light-emitting element, and semiconductor light-emitting element.
This patent application is currently assigned to ASAHI KASEI KABUSHIKI KAISHA. The applicant listed for this patent is ASAHI KASEI KABUSHIKI KAISHA. Invention is credited to Koumei TAKEDA, Satoshi YAMADA.
Application Number | 20160049552 14/779664 |
Document ID | / |
Family ID | 51623202 |
Filed Date | 2016-02-18 |
United States Patent
Application |
20160049552 |
Kind Code |
A1 |
TAKEDA; Koumei ; et
al. |
February 18, 2016 |
MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND
SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Abstract
There are provided a setting process configured to set in a
chamber an aluminum nitride substrate in which a semiconductor
layer is formed on a first principal plane, and an oxide film
forming process configured to heat an inside of the chamber with a
water molecule being introduced in the chamber and to form an oxide
film including an amorphous oxide film and/or a crystalline oxide
film on a second principal plane located on an opposite side to the
first principal plane of the aluminum nitride substrate.
Inventors: |
TAKEDA; Koumei; (Tokyo,
JP) ; YAMADA; Satoshi; (Tokyo, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
ASAHI KASEI KABUSHIKI KAISHA |
Tokyo |
|
JP |
|
|
Assignee: |
ASAHI KASEI KABUSHIKI
KAISHA
Tokyo
JP
|
Family ID: |
51623202 |
Appl. No.: |
14/779664 |
Filed: |
March 28, 2014 |
PCT Filed: |
March 28, 2014 |
PCT NO: |
PCT/JP2014/001841 |
371 Date: |
September 24, 2015 |
Current U.S.
Class: |
257/98 ;
438/29 |
Current CPC
Class: |
H01L 21/0242 20130101;
H01L 21/02502 20130101; H01L 33/22 20130101; H01L 21/02513
20130101; H01L 33/20 20130101; H01L 33/32 20130101; C30B 33/005
20130101; H01L 33/44 20130101; C30B 29/403 20130101; H01L 33/0075
20130101; H01L 2933/0025 20130101 |
International
Class: |
H01L 33/22 20060101
H01L033/22; H01L 33/00 20060101 H01L033/00; H01L 33/32 20060101
H01L033/32; H01L 33/44 20060101 H01L033/44 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 29, 2013 |
JP |
2013-074028 |
Oct 31, 2013 |
JP |
2013-227375 |
Claims
1. A manufacturing method of a semiconductor light-emitting
element, the manufacturing method comprising: setting in a chamber
an aluminum nitride substrate in which a semiconductor layer is
formed on a first principal plane; and heating an inside of the
chamber with a water molecule being introduced in the chamber to
form an oxide film including an amorphous oxide film and/or a
crystalline oxide film on a second principal plane located on an
opposite side to the first principal plane of the aluminum nitride
substrate.
2. The manufacturing method of the semiconductor light-emitting
element according to claim 1, wherein in forming the oxide film,
the oxide film having a surface of an uneven structure is
formed.
3. The manufacturing method of the semiconductor light-emitting
element according to claim 1, wherein in forming the oxide film,
relative humidity in the chamber is equal to or higher than 50% and
equal to or lower than 100%.
4. The manufacturing method of the semiconductor light-emitting
element according to claim 1, wherein in forming the oxide film, a
temperature in the chamber is equal to or higher than 100.degree.
C. and equal to or lower than 140.degree. C.
5. The manufacturing method of the semiconductor light-emitting
element according to claim 1, wherein in forming the oxide film,
relative pressure in the chamber is equal to or higher than 0.01
MPa and equal to or lower than 0.3 MPa.
6. A semiconductor light-emitting element, comprising: a
semiconductor layer formed on a first principal plane of an
aluminum nitride substrate; and an oxide film formed on a second
principal plane located on an opposite side to the first principal
plane of the aluminum nitride substrate, the oxide film being
smaller in refractive index than the aluminum nitride substrate,
wherein the oxide film includes an amorphous oxide film and/or a
crystalline oxide film.
7. The semiconductor light-emitting element according to claim 6,
wherein an interface between the oxide film and the aluminum
nitride substrate has an uneven structure.
8. The semiconductor light-emitting element according to claim 6,
wherein a surface of the oxide film has an uneven structure.
9. The semiconductor light-emitting element according to claim 6,
wherein the oxide film is a layered structure made of a plurality
of the oxide films including the amorphous oxide film and the
crystalline oxide film, and wherein the oxide film has an uneven
structure at an interface between the amorphous oxide film and the
crystalline oxide film.
10. The semiconductor light-emitting element according to claim 6,
wherein the oxide film is a layered structure made of a plurality
of the oxide films including the amorphous oxide film and the
crystalline oxide film, and wherein the oxide film includes the
crystalline oxide film on the amorphous oxide film.
11. The semiconductor light-emitting element according to claim 6,
wherein the oxide film includes Al.
12. The semiconductor light-emitting element according to claim 6,
wherein a thickness of the oxide film is equal to or larger than 10
nm and equal to or smaller than 5 .mu.m.
13. The semiconductor light-emitting element according to claim 6,
wherein the oxide film includes at least the amorphous oxide film,
and a thickness of the amorphous oxide film is equal to or larger
than 10 nm and equal to or smaller than 3 .mu.m.
14. The semiconductor light-emitting element according to claim 6,
wherein the oxide film includes at least the crystalline oxide
film, and a thickness of the crystalline oxide film is equal to or
larger than 10 nm and equal to or smaller than 2 .mu.m.
15. The semiconductor light-emitting element according to claim 6,
wherein the semiconductor layer is a group III-V compound
semiconductor layer including an element selected from the group
consisting of at least aluminum, gallium, nitrogen, and indium.
16. The semiconductor light-emitting element according to claim 6,
wherein the second principal plane of the aluminum nitride
substrate is a C plane and an N plane in a hexagonal crystal.
17. A semiconductor light-emitting element obtained by carrying out
a method comprising: a setting process configured to set in a
chamber an aluminum nitride substrate in which a semiconductor
layer is formed on a first principal plane, and an oxide film
forming process configured to heat an inside of the chamber with a
water molecule being introduced in the chamber and to form an oxide
film including an amorphous oxide film and/or a crystalline oxide
film on a second principal plane located on an opposite side to the
first principal plane of the aluminum nitride substrate.
Description
TECHNICAL FIELD
[0001] The present invention relates to a manufacturing method of a
semiconductor light-emitting element, and the semiconductor
light-emitting element, and in particular, relates to a
manufacturing method of a semiconductor light-emitting element in
which a semiconductor layer is formed on an aluminum nitride
substrate, and the semiconductor light-emitting element.
BACKGROUND ART
[0002] A semiconductor light-emitting element, for example, a
light-emitting diode (LED) of a nitride semiconductor generally
includes a semiconductor stacked part in which an n-type
semiconductor layer, a light-emitting layer, an electron blocking
layer, and a p-type semiconductor layer are sequentially stacked on
a substrate, and an electrode for applying a voltage to the
light-emitting layer.
[0003] Then, the light generated at the light-emitting layer is
emitted to the outside of the semiconductor light-emitting element
from an externally exposed face (top face, side face) or an exposed
face (back face, side face) of the substrate. On this occasion, at
a semiconductor interface or at an interface between the
semiconductor light-emitting element and the air, the incident
light at an angle equal to or larger than a critical angle
propagates in the semiconductor layer while repeating the total
reflection from the limitation of the total reflection to be
decided by a refractive index of the interface. In the meantime,
the light is partially absorbed in the semiconductor layer itself
or is absorbed into the electrode and converted into heat,
resulting in that the light extraction efficiency to the outside
degrades and the light-emitting strength decreases. Therefore,
various concepts have been made to improve the light extraction
efficiency.
[0004] Especially, a technology of improving the light extraction
efficiency by processing the semiconductor element surface so that
the light enters the interface at a critical angle or smaller is
often used. Patent Literature 1 discloses a technique of forming an
uneven structure in which a height is equal to or more than 100 nm
on the surface of a semiconductor layer and/or on the surface of a
sapphire substrate and the base has cone-shaped projections with
different sizes of 1 nm to 500 nm, by using an organic substance
that undergoes phase separation as a mask for dry etching the
surface of the semiconductor layer that forms an interface with its
outside and/or the surface of the sapphire substrate. In addition,
Patent Literature 2 discloses a method of improving the light
extraction efficiency of the light-emitting element, by forming
substantially polygon-shaped unevenness on the surface of the side
where the semiconductor layer of the sapphire substrate is formed
by using the mask and etching.
CITATION LIST
Patent Literature
PLT 1: JP 2003-218383 A
PLT 2: JP 2012-238895 A
SUMMARY
Technical Problem
[0005] The technologies disclosed in Patent Literatures 1 and 2,
however, still have room for improvement in the following
points.
[0006] Like the above-described technologies, in the method of
forming the mask on the processed surface by use of the
photolithography process or the phase separation of the organic
substance and carrying out the etching process with the mask, a
desired uneven pattern can be formed on the substrate surface.
However, in the method of forming the uneven pattern by using the
mask, several stages are necessary for the mask forming process.
Hence, the mass productivity is bad and the manufacturing costs
increase.
[0007] Besides, in the technology of forming the uneven structure
in the dry etching like Patent Literature 1, not only the processed
surface but also the internal semiconductor layer are subject to
etching damages. Hence, the light output of the semiconductor
light-emitting element might be degraded. Moreover, in the
technology of providing the optical pattern of uneven structure
having the light extraction effect on the surface (an interface
between the substrate and the semiconductor layer) of the side on
which the semiconductor layer of the substrate is made to grow as
disclosed in Patent Literature 2, the semiconductor layer has to be
formed on the substrate surface having such an uneven structure.
Hence, the semiconductor layer crystal properties might deteriorate
and the light output might be lowered.
[0008] Therefore, the present invention has been made in view of
the above circumstances, and has an object to provide a
manufacturing method of a semiconductor light-emitting element, in
which the light extraction efficiency of the semiconductor
light-emitting element can be improved, and the mass productivity
is good, while an etching damage onto the semiconductor layer or a
deterioration in crystal property of the semiconductor layer in the
semiconductor light-emitting element is being suppressed, and the
semiconductor light-emitting element.
Solution to Problem
[0009] As a result of earnestly studying how to address the
above-described drawbacks, the inventors of the present invention
have found out that the above-described drawbacks can be addressed
by a manufacturing method of a semiconductor light-emitting
element, and the semiconductor light-emitting element to be
described below.
[0010] That is to say, in one embodiment of the present invention,
there is provided a manufacturing method of a semiconductor
light-emitting element, the manufacturing method including: setting
in a chamber an aluminum nitride substrate in which a semiconductor
layer is formed on a first principal plane; and heating an inside
of the chamber with a water molecule being introduced in the
chamber to form an oxide film including an amorphous oxide film
and/or a crystalline oxide film on a second principal plane located
on an opposite side to the first principal plane of the aluminum
nitride substrate.
BRIEF DESCRIPTION OF DRAWINGS
[0011] FIG. 1 is a schematic view illustrative of a configuration
example of an oxide film forming device 50 suitable for use in one
embodiment of the present invention;
[0012] FIG. 2A to FIG. 2D are cross-sectional views illustrative of
sequential processes in a manufacturing method of a semiconductor
light-emitting element 100 in one embodiment of the present
invention;
[0013] FIG. 3 is a SEM image in which a surface of a second
principal plane processed in Example 1 is observed;
[0014] FIG. 4 is a SEM image in which the second principal plane
processed in Example 1 is observed;
[0015] FIG. 5 is a STEM image in which the second principal plane
processed in Example 1 is observed;
[0016] FIG. 6 is a graph illustrative of outputs that change over
time of the semiconductor light-emitting element subject to
oxidization and crystal growth in Example 1;
[0017] FIG. 7 is a SEM image in which the second principal plane
processed in Example 2 is observed;
[0018] FIG. 8 is a STEM image in which the second principal plane
processed in Example 2 is observed;
[0019] FIG. 9 is a SEM image in which the second principal plane
processed in Example 3 is observed;
[0020] FIG. 10 is a SEM image in which the second principal plane
processed in Example 4 is observed;
[0021] FIG. 11 is a STEM image in which the second principal plane
processed in Example 4 is observed; and
[0022] FIG. 12A and FIG. 12B are schematic cross-sectional views
illustrative of a measuring method of a thickness of an oxide
film.
DESCRIPTION OF EMBODIMENTS
[0023] Hereinafter, embodiments (hereinafter, also referred to as
present embodiment) to carry out the present invention will be
described in detail.
[0024] (Manufacturing Method of Semiconductor Light-Emitting
Element)
[0025] The manufacturing method of the semiconductor light-emitting
element in the present embodiment includes a setting process of
setting up in a chamber an aluminum nitride (AlN) substrate in
which a semiconductor layer is formed on a first principal plane,
and an oxide film forming process of heating the inside of the
chamber with water (H.sub.2O) molecules being introduced in the
chamber, and forming an oxide film including an amorphous oxide
film and/or a crystalline oxide film, on a second principal plane
of the aluminum nitride substrate.
[0026] (Setting Process)
[0027] The setting process in the manufacturing method of the
semiconductor light-emitting element in the present embodiment is a
process of setting up in a chamber the aluminum nitride substrate
in which the semiconductor layer is formed on the first principal
plane.
[0028] The chamber is not particularly limited, as far as the
aluminum nitride substrate can be set up in its inside and water
molecules can be introduced into its inner space. In the oxide film
forming process, when the relative humidity, the temperature, and
the relative pressure are controlled to fall within desired ranges,
respectively, the chamber has a mechanism of controlling the
relative humidity, the temperature, and the relative pressure,
while monitoring them, in one embodiment of the present
invention.
[0029] (Oxide Film Forming Process)
[0030] In the oxide film forming process in the manufacturing
method of the semiconductor light-emitting element in the present
embodiment, the inside of the chamber is heated with the water
molecules being introduced in the chamber, so as to form an oxide
film including an amorphous oxide film and/or a crystalline oxide
film on the second principal plane of the aluminum nitride
substrate.
[0031] In addition, the oxide film is formed by controlling process
conditions (such as the relative humidity, the temperature, the
relative pressure, and a process time), in one embodiment. The
oxide film may be a monolayer of the amorphous oxide film or the
crystalline oxide film, or may be a stack of the amorphous oxide
film and the crystalline oxide film.
[0032] Note that it is known that a natural oxide film is formed on
the surface of the aluminum nitride substrate by exposing the
aluminum nitride substrate in the atmosphere. However, it has been
confirmed from Examples to be described later that no improvement
in the light extraction efficiency is made in the natural oxide
film, but effects of the improvement in the light extraction
efficiency from the second principal plane are brought out by the
oxide film including the amorphous oxide film and/or the
crystalline oxide film on the second principal plane of the
aluminum nitride substrate, the oxide film being obtained by
intentionally heating the inside of the chamber with the water
molecules being introduced in the chamber.
[0033] From a viewpoint of forming an oxide film that further
improves the light extraction efficiency, the relative humidity in
the chamber in the oxide film forming process may be equal to or
higher than 50% and equal to or lower than 100%, in one embodiment,
or may be equal to or higher than 65% and equal to or lower than
100%, in another embodiment.
[0034] In addition, from a viewpoint of forming the oxide film that
further improves the light extraction efficiency, the temperature
in the chamber in the oxide film forming process may be equal to or
higher than 100.degree. C. and equal to or lower than 140.degree.
C., in one embodiment, or may be equal to or higher than
105.degree. C. and equal to or lower than 121.degree. C., in
another embodiment.
[0035] Further, from a viewpoint of forming the oxide film that
further improves the light extraction efficiency, the relative
pressure force (gauge pressure) in the chamber in the oxide film
forming process may be equal to or higher than 0.01 MPa and equal
to or lower than 0.3 MPa, in one embodiment, or may be equal to or
higher than 0.01 MPa and equal to or lower than 0.1 MPa, in another
embodiment.
[0036] Hereinafter, a mechanism of forming the oxide film in the
oxide film forming process will be described. In the oxide film
forming process in the present embodiment, the inside of the
chamber is heated with the water molecules being existent in the
chamber to form the oxide film including the amorphous oxide film
and/or the crystalline oxide film on the second principal plane of
the aluminum nitride substrate. Therefore, as compared to the
condition where a natural oxide film is formed, it is supposed that
steam easily reacts with the second principal plane of the aluminum
nitride substrate and the oxide film including the amorphous oxide
film and/or the crystalline oxide film with effects of the light
extraction improvement is formed. The amorphous oxide film with
effects of the light extraction improvement remarkably is formed,
in one embodiment, when the second principal plane of the aluminum
nitride substrate is processed at the temperature equal to or
higher than 100.degree. C., the relative humidity equal to or
higher than 50%, the pressure force higher than the atmospheric
pressure.
[0037] In addition, when the temperature in the chamber is high
(for example, higher than 105.degree. C.), it has been confirmed in
Examples to be described later that the crystalline oxide film
having a surface of an uneven structure tends to be formed. It is
supposed that the crystalline oxide film is formed by hydrothermal
synthesis.
[0038] As the oxide film including aluminum (Al), aluminum oxide,
hydration aluminum oxide, aluminum hydroxide, or a membrane in
which the above aluminum and aluminum nitride are mixed can be
given, but the oxide film including aluminum is not limited to
them. In the oxide film forming process, by controlling at least
one of the temperature, the relative humidity, the relative
pressure, and any combination thereof, the reaction of the second
principal plane of the aluminum nitride substrate and the steam is
controlled, so that the oxide film or the uneven form of the
surface can be controlled.
[0039] In the oxide film forming process in the present embodiment,
plasma or the like used by dry etching is not used. Accordingly,
since no etching damage is made onto the semiconductor layer, a
reduction in the light-emitting efficiency caused by the etching
damage is suppressed.
[0040] In addition, in the oxide film forming process in the
present embodiment, after the semiconductor layer is formed, the
oxide film having an uneven structure on the second principal plane
of the aluminum nitride substrate is formed. Such an uneven
structure is formed on the second principal plane, instead that an
optical pattern with the light extraction effect is formed on a
surface of a side where the semiconductor layer of the substrate
(an interface between the substrate and the semiconductor layer) is
made to grow. Thus, since no effect is given to the crystal defect
occurrence at the time of the semiconductor layer growth, there is
no reduction in the light-emitting efficiency caused by the crystal
defect.
[0041] (Aluminum Nitride Substrate)
[0042] As to the aluminum nitride substrate used in the
manufacturing method of the semiconductor light-emitting element in
the present embodiment, any aluminum nitride substrate may be used
as far as it includes a constituent element mainly including
aluminum (Al) and nitrogen (N).
[0043] In addition, any aluminum nitride substrate is used as far
as it has the first principal plane on which a semiconductor layer
is formed and the second principal plane on which an oxide film is
formed in the oxide film forming process. The shape of the aluminum
nitride substrate is not limited in particular, may be a form of
wafer, or may be a form of individual tip. The first principal
plane and the second principal plane face each other in
substantially parallel to each other, in one embodiment.
[0044] In addition, the above aluminum nitride substrate may
include various kinds of dopants or impurities, if necessary. The
above aluminum nitride substrate may be a polycrystal or single
crystal. The single crystal is used from a viewpoint of forming the
semiconductor layer with good crystal properties, in one
embodiment.
[0045] Further, the method of manufacturing the aluminum nitride
substrate is not limited in particular. For example, aluminum
nitride obtained by a sublimation method, HVPE (Hydride Vapor Phase
Epitaxy), MOCVD (Metal Organic Chemical Vapor Deposition), MBE
(Molecular Beam Epitaxy), or the like can be used.
[0046] From a viewpoint of flatness and crystal property
improvement of the semiconductor layer, the first principal plane
of the aluminum nitride substrate may be an Al plane, in one
embodiment, or may be a C plane and Al plane in a hexagonal
crystal, in another embodiment. Furthermore, from a viewpoint of
efficiently forming the oxide film in the present embodiment, the
second principal plane of the aluminum nitride substrate may be a C
plane and N plane in the hexagonal crystal, in yet another
embodiment.
[0047] Moreover, in the manufacturing method of the semiconductor
light-emitting element in the present embodiment, from a viewpoint
of further improving the effects in the light extraction efficiency
improvement, the second principal plane of the aluminum nitride
substrate is a plane that has not been subject to CMP (Chemical
Mechanical Polishing), in further another embodiment.
[0048] (Semiconductor Layer)
[0049] The semiconductor layer formed on the first principal plane
of an aluminum nitride substrate used in the manufacturing method
of the semiconductor light-emitting device in the present
embodiment is not limited in particular, as far as it emits light
when electricity is supplied to the semiconductor layer.
[0050] The semiconductor layer may be a single layer, or may have a
layered structure in which plural semiconductor layers having
different constituent elements or different ratios of the
constitution elements are stacked. From a viewpoint of improving
the light-emitting efficiency, the semiconductor layer may have a
layered structure in one embodiment. Such a layered structure may
have an n-type semiconductor layer, a light-emitting layer, an
electron blocking layer, and a p-type semiconductor layer, in
another embodiment. Such a layered structure further includes a
contact layer that lowers a contact resistance with an electrode in
a region in contact with the electrode for supplying the
electricity, in yet another embodiment.
[0051] From a viewpoint of improving the light-emitting efficiency,
the light-emitting layer has a multiplex quantum well structure
(MQW, Multi-Quantum Well), in one embodiment.
[0052] From a viewpoint of controlling an emission wavelength, the
semiconductor layer may be a compound semiconductor, in one
embodiment, may be a group III-V compound semiconductor, in another
embodiment, may be a group III-V compound semiconductor layer
including an element selected from a group consisting of aluminum,
gallium, nitrogen and indium, in yet another embodiment, or may be
a nitride compound semiconductor, in further another embodiment. A
constitution element or a composition ratio of the semiconductor
layer can be selected in various ways depending on what light of
wavelength should be emitted. When the nitride compound
semiconductor is used, for example, gallium nitride, aluminum
nitride, indium nitride, boron nitride, or a mixed crystal thereof
can be used, but the nitride compound semiconductor is not limited
to them.
[0053] In addition, from a viewpoint of extracting the light
effectively from the second principal plane of the aluminum nitride
substrate, a mesa structure, an n-electrode, and a p-electrode may
be formed on the first principal plane of the aluminum nitride
substrate, in one embodiment, instead of forming the electrode on
the second principal plane of the aluminum nitride substrate.
[0054] (Oxide Film)
[0055] The oxide film formed by the manufacturing method of the
semiconductor light-emitting element in the present embodiment is
not limited in particular, as far as it is an oxide film including
an amorphous oxide film and/or a crystalline oxide film (that is,
only the amorphous oxide film, only the crystalline oxide film, or
both of the amorphous oxide film and the crystalline oxide film may
be included).
[0056] From a viewpoint of improving the light-emitting efficiency,
the amorphous oxide film may be an oxide film including Al, in one
embodiment. In addition, from a viewpoint of improving the
light-emitting efficiency, it may be an oxide film having an uneven
structure, in another embodiment. That is, the interface between
the oxide film and the aluminum nitride substrate may have an
uneven structure, or the surface of the oxide film (that is, a
plane on an opposite side to the plane in contact with the aluminum
nitride substrate of the oxide film) may have an uneven structure,
in yet another embodiment. In addition, the oxide film may have a
layered structure having plural oxide films including the amorphous
oxide film and the crystalline oxide film, and the oxide film may
have an uneven structure at the interface between the amorphous
oxide film and the crystalline oxide film. The crystalline oxide
film is a polycrystal including Al, in one embodiment. Further, the
oxide film may have a layered structure having plural oxide films
including the amorphous oxide film and the crystalline oxide film,
and the oxide film may have a structure having the crystalline
oxide film on the amorphous oxide film.
[0057] As to such an uneven structure at the interface between the
oxide film and the aluminum nitride substrate, when the height of
the uneven structure to be described later is smaller than 10 nm,
the structure is assessed to be flat (there is no uneven
structure). When the height is equal to or larger than 10 nm, the
structure is assessed to be uneven. From a viewpoint of improving
the extraction efficiency, the height of the uneven structure may
be equal to or larger than 10 nm and equal to or smaller than 2
.mu.m, in one embodiment, may be equal to or larger than 50 nm and
equal to or smaller than 1 .mu.m, in another embodiment, or may be
equal to or larger than 100 nm and equal to or smaller than 500 nm,
in yet another embodiment.
[0058] The height of the uneven structure is measured by using an
image obtained by capturing a cross section of the oxide film with
a STEM (Scanning Transmission Electron Microscope) (image
magnification: 40000 times). Firstly, a reference line parallel to
an interface between the aluminum nitride substrate and the
semiconductor layer is arranged below the uneven structure not to
overlap the uneven structure. Next, a distance from the reference
line to the uneven structure (the interface between the surface of
the oxide film and/or the oxide film and the aluminum nitride
substrate) is read for 3 .mu.m in width with respect to the
reference line. A ten-point average roughness R is calculated,
which is a difference between an average of the distances (Yp) from
the top having the longest distance to the top having the fifth
longest distance and an average of the distances (Yv) from the
bottom having the shortest distance to the bottom having the fifth
shortest distance. The top and the bottom mean regions where the
inclination is parallel to the reference line. It is to be noted
that when there is no top or bottom in a range of 3 .mu.m in width
with respect to the reference line, the height of the uneven
structure is supposed to zero. In addition, when the total number
of the tops and the bottoms in the range of 3 .mu.m in width with
respect to the reference line is equal to or larger than 1 and
equal to or smaller than 20, after moving to an adjacent field of
vision from the image-captured area, the cross-sectional images are
captured until the total number is at least 20.
[0059] The above-described ten-point average roughness R is
calculated for different five points of cross sections, so that the
average value of the ten-point average roughness R at five points
of cross sections is supposed to be the height of the uneven
structure.
[0060] The oxide film may include aluminum as a constitution
element. As the oxide film including aluminum, as described above,
aluminum oxide, hydration aluminum oxide, aluminum hydroxide, or a
film in which the above aluminum is mixed with aluminum nitride may
be used, but the oxide film is not limited to them.
[0061] The refractive index of such an oxide film is lower than the
refractive index of aluminum nitride which is a material of the
substrate. In particular, the refractive indexes of the
above-described aluminum oxide, hydration aluminum oxide, and
aluminum hydroxide are lower than the refractive index of aluminum
nitride.
[0062] The thickness of the oxide film is not limited in
particular. However, as no effect in the light extraction
efficiency improvement can be expected at the thickness of the
natural oxide film or so, the thickness of the oxide film may be
equal to or larger than 10 nm or equal to or smaller than 5 .mu.m,
in one embodiment, or may be equal to or larger than 100 nm or
equal to or smaller than 5 .mu.m, in another embodiment. When the
oxide film has a layered structure of the amorphous oxide film and
the crystalline oxide film, from a viewpoint of improving the light
extraction efficiency, the thickness of the amorphous oxide film
may be equal to or larger than 10 nm or equal to or smaller than 3
.mu.m, in one embodiment, may be equal to or larger than 50 nm or
equal to or smaller than 2.5 .mu.m, in another embodiment, or may
be equal to or larger than 100 nm or equal to or smaller than 2
.mu.m, in yet another embodiment. The thickness of the crystalline
oxide film may be equal to or larger than 10 nm or equal to or
smaller than 2 .mu.m, in one embodiment, may be equal to or larger
than 50 nm or equal to or smaller than 1.5 .mu.m, in another
embodiment, or may be equal to or larger than 100 nm or equal to or
smaller than 1 .mu.m, in yet another embodiment.
[0063] The thickness of the oxide film is measured by capturing a
cross-sectional image of the oxide film with STEM. The measurement
direction (axis) of the thickness is set to a direction
perpendicular to the interface between the aluminum nitride
substrate and the semiconductor layer. For example, as illustrated
in FIG. 12A, when the interface between the oxide film and the
aluminum nitride substrate is flat, a value measured at one point
is supposed to be the thickness of the oxide film. In addition,
when the oxide film or the aluminum nitride substrate has an uneven
structure, since a dent and a projection appear repeatedly, the
depth is different depending on the measurement point. For example,
as illustrated in FIG. 12B, when the interface between the oxide
film and the aluminum nitride substrate (substrate) has an uneven
structure, such an uneven structure of the substrate is supposed to
be a reference and an average value of values measured with all
dents and projections of the uneven structure of the substrate is
supposed to the thickness of the oxide film. The image
magnification is 300000 times, when the thickness of the oxide film
is 10 nm to 100 nm, the image magnification is 20000 times, when
the thickness of the oxide film is 100 nm to 3 .mu.m. The image
magnification is 5000 times, when the thickness of the oxide film
is 3 .mu.m to 5 .mu.m.
[0064] The whole aspect of the mechanism of improving the light
extraction efficiency of the semiconductor light-emitting element
is not still clear with the oxide film formed in the manufacturing
method of the semiconductor light-emitting element in the present
embodiment. However, the structure has the oxide film having the
refractive index smaller than that of the aluminum nitride
substrate on the second principal plane of the aluminum nitride
substrate. Therefore, it is supposed that the critical angle
defined in Snell's law can be designed to be large at the interface
between the aluminum nitride substrate and the oxide film, the
reflection of the incident light is restrained due to the large
critical angle, and the extraction efficiency increases. Further,
it is supposed that since the oxide film formed in the present
embodiment has a density or composition continuously or
discontinuously changing, a reflection of the light at the
interface between the substrate and the oxide film is restrained,
and the light extraction efficiency is improved.
[0065] In particular, when the oxide film has the layered structure
of the amorphous oxide film and the crystalline oxide film, it is
supposed that the light extraction efficiency by the
above-mentioned mechanism can be remarkably improved. Furthermore,
when at least one of the surface of the oxide film, the interface
of the oxide film (for example, the interface between the amorphous
oxide film and the crystalline oxide film), and the interface
between the oxide film and the aluminum nitride substrate has an
uneven structure, the light extraction efficiency improvement
caused by the light scattering effect can occur, too. Also, by
forming the uneven structure on the oxide film in consideration of
the light scattering effect, the semiconductor light-emitting
element that further improves the light extraction efficiency is
made available.
[0066] (Example of Process Flow)
[0067] Next, referring to the drawings, a process flow in the
present embodiment will be described with an example. Here, a
manufacturing process will be sequentially described from an
aluminum nitride substrate to a completion of a semiconductor
light-emitting element in the present embodiment. In addition, an
oxide film forming device suitable for use in the present
embodiment will be described.
[0068] FIG. 1 is a schematic view illustrative of a configuration
example of an oxide film forming device 50 suitable for use in the
present embodiment. FIG. 2A to FIG. 2D are cross-sectional views
illustrative of sequential processes in a manufacturing method of a
semiconductor light-emitting element 100 in the present
embodiment.
[0069] In this process flow, firstly, the oxide film forming device
50 is prepared beforehand so that an oxide film 20 is formed on a
second principal plane 1b of an aluminum nitride substrate 1 (that
is to say, to carry out the setting process and the oxide film
forming process).
[0070] As illustrated in FIG. 1, the oxide film forming device 50
includes a chamber 51 that can be sealed to maintain its inside at
an atmospheric pressure or higher, a stage 53 arranged at the
inside of the chamber 51 to be capable of supporting the aluminum
nitride substrate (for example, wafer) 1, a nozzle 55 arranged at
an upper center in the chamber 51, an H.sub.2O supply source 61
configured to supply water (H.sub.2O) molecules into the chamber 51
through the nozzle 55, a heater 81 arranged at a circumference of
the chamber 51 and configured to heat the inside of the chamber 51,
and a controller 90 configured to control the H.sub.2O supply
source 61 and the heater 81, respectively, so that the relative
humidity and the temperature in the chamber 51 fall within ranges
set beforehand (that is, predefined ranges). Also, although not
illustrated, a heater may be built in the stage 53, so that such a
heater built in the stage 53 may heat the inside of the
chamber.
[0071] Here, the value of the relative pressure (gauge pressure) in
the chamber 51 is determined by the relative humidity and the
temperature in the chamber 51. The relative pressure in the chamber
51 is not an independent parameter. The relative pressure in the
chamber 51 is controlled by the controller 90 (or is set beforehand
by a device manager who manages the oxide film forming device 50).
By setting the temperature and the relative humidity in the chamber
51 to be higher than a stand-by state, the relative pressure can be
relatively higher than the atmospheric pressure. Further, although
not illustrated, the oxide film forming device 50 may be provided
with a pressure pump capable of intentionally controlling the
relative pressure in the chamber 51.
[0072] Further, the H.sub.2O supply source 61 may include a water
tank, which is not illustrated in the oxide film forming device 50,
and a heater for the water tank (a different heater from the heater
for heating the chamber), so that the water in the water tank may
be heated with the heater for the water tank to supply the water
which has changed into gas into the chamber 51 through the nozzle
55. In this case, the relative humidity in the chamber 51 depends
on the output from the heater for the water tank and an ambient
temperature in the chamber. The output from the heater for the
water tank may be controlled by the controller 90, or may take a
value set beforehand by the device manager.
[0073] The aluminum nitride substrate 1 is prepared next. As
illustrated in FIG. 2A, the aluminum nitride substrate 1 has a
first principal plane 1a, and a second principal plane 1b located
on the opposite side to the first principal plane 1a. As
illustrated in FIG. 2B, an n-type semiconductor layer 11, a
light-emitting layer 13, an electron blocking layer 15, and a
p-type semiconductor layer 17 are sequentially stacked on the first
principal plane 1a of the aluminum nitride substrate 1 to form the
semiconductor layer 10 including these layers. The semiconductor
layer 10 is formed in MBE method or MOCVD method, for example.
[0074] Next, as illustrated in FIG. 2C, the semiconductor layer 10
is patterned in a mesa shape by using a photolithography technique
and an etching technique. Then, an insulating film 31 is deposited
on the first principal plane 1a of the aluminum nitride substrate 1
to cover the semiconductor layer 10 that has been patterned in the
mesa shape (that is to say, in a mesa structure). The insulating
film 31 is a silicon oxide (SiO2) film, for example, and is formed
in CVD method, for example.
[0075] Then, by using well-known photolithography technique and
etching technique, the insulating film 31 is partially removed to
form contact holes having bottoms of the n-type semiconductor layer
11 and the p-type semiconductor layer 17, respectively.
[0076] Subsequently, by using a photolithography technique and a
lift off technique, metal membranes are selectively deposited to
embed the contact holes. The metal membranes are deposited in a
vacuum deposition method, for example. Thus, an electrode portion
33 electrically connected to the n-type semiconductor layer 11 and
an electrode portion 35 electrically connected to the p-type
semiconductor layer 17 are formed.
[0077] Next, the aluminum nitride substrate 1 in which the
electrode portion 35 is formed is set on the stage 53 of the oxide
film forming device 50 illustrated in FIG. 1. Here, as illustrated
in FIG. 1, the aluminum nitride substrate 1 is set on the stage 53
with the second principal plane 1b of the aluminum nitride
substrate 1 facing upward (that is to say, facing the nozzle 55
side) (the setting process).
[0078] Then, the chamber 51 is heated with the water molecules
being introduced in the chamber 51. Accordingly, as illustrated in
FIG. 2D, the second principal plane 1b of the aluminum nitride
substrate 1 is subject to a heating process to form the oxide film
20 including an amorphous oxide film 21 on the second principal
plane 1b (the oxide film forming process).
[0079] Here, the controller 90 illustrated in FIG. 1 is configured
to control the H.sub.2O supply source 61 and the heater 81, so that
the heating process conditions (the relative humidity, the
temperature, the relative pressure, the process time) of the
aluminum nitride substrate 1 fall within predefined ranges. Also,
the controller 90 may be configured to control the heating process
conditions to further form a crystalline oxide film 23 having a
surface of an uneven structure on the amorphous oxide film 21 of
the second principal plane 1b. The crystalline oxide film 23 is
formed at the same time with the amorphous oxide film 21 in the
oxide film forming process.
[0080] Then, after the oxide film 20 is formed on the second
principal plane 1b of the aluminum nitride substrate 1, the
aluminum nitride substrate 1 is taken out from the chamber 51 of
the oxide film forming device 50. Through the above-mentioned
processes, the semiconductor light-emitting element 100 in the
present embodiment is manufactured.
[0081] (Effects of Embodiments)
[0082] According to embodiments of the present invention, the
inside of the chamber 51 is heated with the water molecules being
introduced in the chamber 51 in which the aluminum nitride
substrate 1 is arranged. Thus, it is possible to form the oxide
film 20 including the amorphous oxide film 21 and/or the
crystalline oxide film 23, which are smaller in refraction index
than the aluminum nitride substrate 1, on the second principal
plane 1b of the aluminum nitride substrate 1. As a result, it is
made possible to remarkably improve the light extraction efficiency
from the second principal plane 1b of the aluminum nitride
substrate 1.
[0083] In addition, in the process of forming the oxide film 20 as
described above (that is to say, the oxide film forming process),
the etching process does not have to be carried out on the surface
of the oxide film 20 or the second principal plane 1b of the
aluminum nitride substrate 1. Accordingly, the mass productivity is
good and an etching damage to the aluminum nitride substrate 1 or
the semiconductor layer 10 can be suppressed.
[0084] Furthermore, the above-described oxide film forming process
is carried out after the semiconductor layer 10 is formed. In this
manner, the oxide film is formed on the second principal plane,
instead that an optical pattern of an uneven structure with the
light extraction effect is arranged on the surface on which the
semiconductor layer of the substrate is made to grow (the interface
between the substrate and the semiconductor layer). Thus, since the
oxide film forming process does not affect a crystal defect
occurrence at the time of the semiconductor layer growth, a
degradation in the crystal property of the semiconductor layer 10
can be suppressed.
EXAMPLES
[0085] The present invention will be described in more detail based
on Examples. It is to be noted that the present invention is not
limited to the following Examples, and can be changed as
necessary.
Example 1
[0086] By use of a MOCVD (Metal Organic Chemical Vapor Deposition)
device, a wafer in which an n-type semiconductor layer including
aluminum, gallium, and nitrogen, an MQW (Multiple Quantum Well)
light-emitting layer, an electron blocking layer, and a p-type
semiconductor layer are sequentially formed on an aluminum nitride
substrate, and was subject to well-known lithography technique and
dry etching technique to make a mesa structure from which the
n-type semiconductor layer is exposed, so that electrodes were
vapor-deposited on both p-type semiconductor layer and the n-type
semiconductor layer, and the second principal plane of the aluminum
nitride substrate was ground. In this manner, six semiconductor
light-emitting elements of the ultraviolet region were
manufactured.
[0087] Then, an electrical current of 100 mA was applied to each of
the semiconductor light-emitting elements, and the light-emitting
intensity of each semiconductor light-emitting element was measured
and recorded as an initial value.
[0088] Next, each semiconductor light-emitting element was set in a
chamber and held for 1000 hours under conditions that the
temperature was 121.degree. C., the relative humidity was 100%, and
the relative pressure was 0.1 MPa (the setting process, the oxide
film forming process).
[0089] In the meanwhile, after 50 hours, 100 hours, 250 hours, 350
hours, 450 hours, 550 hours, 750 hours, and 1000 hours elapsed from
the start of the process, each semiconductor light-emitting element
was taken out once. The electrical current of 100 mA was applied,
and the light-emitting intensity of each semiconductor
light-emitting element was measured and recorded.
[0090] FIG. 3 and FIG. 4 illustrate SEM (Scanning Electron
Microscope) images on the second principal plane of the aluminum
nitride substrate of the semiconductor light-emitting element,
after the semiconductor light-emitting element is subject to the
process for 500 hours and then taken out from the chamber. FIG. 3
and FIG. 4 exhibit that the film having an uneven structure is
formed on the second principal plane.
[0091] FIG. 5 illustrates a cross-sectional STEM image (20000
times) of the aluminum nitride substrate. From FIG. 5, it is
understood that a first layer having a thickness of 550 nm on the
second principal plane of the aluminum nitride substrate, and a
second layer having a thickness of 300 nm and an uneven surface are
formed. When the height of the uneven structure was measured from
the cross-sectional STEM images (40000 times) of five places, the
height of the uneven structure on the surface of the second layer
was 160 nm and the height of the uneven structure at the interface
between the first layer and the second principal plane of the
aluminum nitride substrate was 140 nm. In addition, the height of
the uneven structure at the interface between the first layer and
the second layer was less than 10 nm, and it was flat. When the
compositions and properties of the respective layers were analyzed
by EDX (Energy Dispersive X-ray spectrometry) and electron beam
diffraction, it was understood that the first layer was an
amorphous oxide film with Al:O=1:3, and the second layer was a
crystalline oxide film with Al:O=1:3.
[0092] In addition, FIG. 6 illustrates a graph of outputs changing
over time with respect to the process time with initial values
being 0 hours. The horizontal axis of FIG. 6 indicates the process
time (hr), whereas the vertical axis indicates the change rate (%)
in the optical output. (1) to (6) in FIG. 6 are respective data of
the six semiconductor light-emitting elements, as described above.
It is understood that the outputs after the process (50 hours to
1000 hours) are increased by 30 to 80% from the initial values
before the process (0 hours). That is to say, it is understood that
in a state where there are water molecules on the second principal
plane of the aluminum nitride substrate, the light extraction
efficiency is remarkably improved by processing the semiconductor
light-emitting elements in the chamber.
Example 2
[0093] Except that the second principal plane of the semiconductor
light-emitting element was ground and then CMP was further carried
out, the semiconductor light-emitting element obtained by a method
similar to Example 1 was held for 50 hours under conditions that
the temperature was 121.degree. C., the relative humidity was 100%,
and the relative pressure was 0.1 MPa.
[0094] FIG. 7 illustrates a SEM image of the second principal plane
of the aluminum nitride substrate of the semiconductor
light-emitting element after the process. From FIG. 7, it is
understood that an oxide film having a surface of an uneven
structure is formed in a similar manner to Example 1.
[0095] FIG. 8 illustrates a cross-sectional STEM image (20000
times) of the aluminum nitride substrate. From FIG. 8, it is
understood that an amorphous oxide film (the first layer) having a
thickness of 1400 nm on the second principal plane of the aluminum
nitride substrate, and a crystalline oxide film (the second layer)
having a thickness of 250 nm of an uneven surface are formed. The
heights of the uneven structures were measured from the
cross-sectional STEM images (40000 times) of five places. The
height of the uneven structure on the surface of the second layer
was 100 nm, and the heights of the uneven structures at the
interface between the first layer and the aluminum nitride
substrate and at the interface between the second layer and the
first layer were less than 10 nm, and it was flat.
[0096] In addition, when the light-emitting intensities were
compared before and after the process, the light-emitting intensity
was improved by 10% after the process. When Example 2 is compared
with Example 1, it is understood that the interface between the
aluminum nitride substrate and the first layer having an uneven
structure like Example 1 is suitable from a viewpoint of improving
the light-emitting efficiency, in one embodiment. In addition, in
order to form the uneven structure at the interface between the
aluminum nitride substrate and the first layer like Example 1, it
is understood that the state of the second principal plane of the
aluminum nitride substrate before the inside of the chamber is
subject to a heating process with the water molecules being
introduced in the chamber would affect forming of the uneven
structure. To be specific, it is understood that the uneven
structure tends to be easily formed at the interface between the
aluminum nitride substrate and the first layer after the second
principal plane is ground.
Example 3
[0097] Except that the second principal plane of the semiconductor
light-emitting element was ground and then CMP was further carried
out, the semiconductor light-emitting element obtained by a method
similar to Example 1 was held for 50 hours under conditions that
the temperature was 121.degree. C., the relative humidity was 65%,
and the relative pressure was 0.03 MPa.
[0098] FIG. 9 illustrates a SEM image of the second principal plane
of the aluminum nitride substrate of the semiconductor
light-emitting element after the process. From FIG. 9, it is
understood that an oxide film having a surface of an uneven
structure is formed in Example 3 in a similar manner to Example
1.
[0099] When the light-emitting intensities were compared before and
after the process, the light-emitting intensity was improved by 15%
after the process. Accordingly, it is understood that the relative
humidity of 65% or more is necessary for forming the oxide film
capable of improving the light extraction efficiency.
Example 4
[0100] Except that the second principal plane of the semiconductor
light-emitting element was ground and then CMP was further carried
out, the semiconductor light-emitting element obtained by a method
similar to Example 1 was held for 50 hours under conditions that
the temperature was 105.degree. C., the relative humidity was 100%,
and the relative pressure was 0.02 MPa.
[0101] FIG. 10 illustrates a SEM image of the second principal
plane of the aluminum nitride substrate of the semiconductor
light-emitting element after the process. In Example 4, the surface
state of the second principal plane before the process was same as
those in Examples 2 and 3, whereas the surface state after the
process was largely different from those in Examples 2 and 3 and
was flat similar to the second principal plane before the process.
Accordingly, it is supposed that the surface shape largely depends
on the temperature.
[0102] FIG. 11 illustrates a cross-sectional STEM image (500000
times) of the aluminum nitride substrate. From FIG. 11, it is
understood that the first layer having a thickness of 32.7 nm is
formed on the second principal plane of the aluminum nitride
substrate. In addition, it is understood that the interface between
the first layer and the aluminum nitride substrate has a flat
structure.
[0103] Further, as for the sample of Example 4, the light-emitting
intensity was improved by 15% by the above process. Accordingly, it
is supposed that when the oxide film of at least 32.7 nm is formed,
the light extraction efficiency improves.
Comparative Example 1
[0104] Except that the second principal plane of the semiconductor
light-emitting element was ground and then CMP was further carried
out, the semiconductor light-emitting element obtained by a method
similar to Example 1 was held for 50 hours under conditions that
the temperature was 25.degree. C., the relative humidity was 100%,
and the relative pressure was 0 MPa.
[0105] The oxide film of 10 nm or more was not formed by the above
process, and the light-emitting intensity did not improve. That is,
it is understood that unless the inside of the chamber is heated,
any oxide film thick enough to be capable of improving the light
extraction efficiency is not formed on the second principal plane
of the aluminum nitride substrate.
Comparative Example 2
[0106] Except that the second principal plane of the semiconductor
light-emitting element was ground and then CMP was further carried
out, the semiconductor light-emitting element obtained by a method
similar to Example 1 was held for 50 hours under conditions that
the temperature was 121.degree. C., the relative humidity was 0%,
and the relative pressure was 0 MPa.
[0107] The oxide film of 10 nm or more was not formed by the above
process, and the light-emitting intensity did not improve. That is
to say, it is understood that in a state where the relative
humidity is too low (the water molecules are not introduced
substantially), any oxide film thick enough to be capable of
improving the light extraction efficiency is not formed on the
second principal plane of the aluminum nitride substrate.
[0108] Table 1 illustrates process conditions and the
light-emitting intensity improvement rates of Examples and
Comparative examples together.
[0109] (Table 1)
TABLE-US-00001 TABLE 1 light-emit- process conditions ting
intensity second temper- relative improvement main ature humidity
time rate plane [.degree. C.] [%] [hrs] [%] example 1 grinding 121
100 50~1000 30~80 example 2 CMP 121 100 50 10 example 3 CMP 121 65
50 15 example 4 CMP 105 100 50 15 comparative CMP 25 100 50 not
improved example 1 comparative CMP 121 0 50 not improved example
2
[0110] (Others)
[0111] It is to be noted that the present invention is not limited
to the above-described embodiments. It should be apparent that
modifications and adaptations to those embodiments may occur based
on knowledge of one skilled in the art and such modifications and
adaptations should be included in the scope of the present
invention.
[0112] In one embodiment of the present invention, there is
provided a manufacturing method of a semiconductor light-emitting
element, the manufacturing method including: setting in a chamber
an aluminum nitride substrate in which a semiconductor layer is
formed on a first principal plane; and heating an inside of the
chamber with a water molecule being introduced in the chamber to
form an oxide film including an amorphous oxide film and/or a
crystalline oxide film on a second principal plane located on an
opposite side to the first principal plane of the aluminum nitride
substrate.
[0113] In addition, in the above-described manufacturing method of
the semiconductor light-emitting element, in forming the oxide
film, the oxide film having a surface of an uneven structure may be
formed.
[0114] Further, in the above-described manufacturing method of the
semiconductor light-emitting element, in forming the oxide film,
relative humidity in the chamber may be equal to or higher than 50%
and equal to or lower than 100%.
[0115] Furthermore, in the above-described manufacturing method of
the semiconductor light-emitting element, in forming the oxide
film, a temperature in the chamber may be equal to or higher than
100.degree. C. and equal to or lower than 140.degree. C.
[0116] Moreover, in the above-described manufacturing method of the
semiconductor light-emitting element, in forming the oxide film,
relative pressure in the chamber may be equal to or higher than
0.01 MPa and equal to or lower than 0.3 MPa.
[0117] In another embodiment of the present invention, there is
provided a semiconductor light-emitting element, including: a
semiconductor layer formed on a first principal plane of an
aluminum nitride substrate; and an oxide film formed on a second
principal plane located on an opposite side to the first principal
plane of the aluminum nitride substrate, the oxide film being
smaller in refractive index than the aluminum nitride substrate,
wherein the oxide film includes an amorphous oxide film and/or a
crystalline oxide film.
[0118] In addition, in the above-described semiconductor
light-emitting element, an interface between the oxide film and the
aluminum nitride substrate may have an uneven structure.
[0119] Further, in the above-described semiconductor light-emitting
element, a surface of the oxide film may have an uneven
structure.
[0120] Furthermore, in the above-described semiconductor
light-emitting element, the oxide film may be a layered structure
made of a plurality of the oxide films including the amorphous
oxide film and the crystalline oxide film, and the oxide film may
have an uneven structure at an interface between the amorphous
oxide film and the crystalline oxide film.
[0121] In addition, in the above-described semiconductor
light-emitting element, the oxide film may be a layered structure
made of a plurality of the oxide films including the amorphous
oxide film and the crystalline oxide film, and the oxide film may
include the crystalline oxide film on the amorphous oxide film.
[0122] Further, in the above-described semiconductor light-emitting
element, the oxide film may include Al.
[0123] Furthermore, in the above-described semiconductor
light-emitting element, a thickness of the oxide film may be equal
to or larger than 10 nm and equal to or smaller than 5 .mu.m.
[0124] Moreover, in the above-described semiconductor
light-emitting element, the oxide film may include at least the
amorphous oxide film, and a thickness of the amorphous oxide film
may be equal to or larger than 10 nm and equal to or smaller than 3
.mu.m.
[0125] In addition, in the above-described semiconductor
light-emitting element, the oxide film may include at least the
crystalline oxide film, and a thickness of the crystalline oxide
film may be equal to or larger than 10 nm and equal to or smaller
than 2 .mu.m.
[0126] Further, in the above-described semiconductor light-emitting
element, the semiconductor layer may be a group III-V compound
semiconductor layer including an element selected from the group
consisting of at least aluminum, gallium, nitrogen, and indium.
[0127] Furthermore, in the above-described semiconductor
light-emitting element, the second principal plane of the aluminum
nitride substrate may be a C plane and an N plane in a hexagonal
crystal.
[0128] In yet another embodiment of the present invention, there is
provided, a semiconductor light-emitting element obtained by
carrying out a method including: a setting process configured to
set in a chamber an aluminum nitride substrate in which a
semiconductor layer is formed on a first principal plane, and an
oxide film forming process configured to heat an inside of the
chamber with a water molecule being introduced in the chamber and
to form an oxide film including an amorphous oxide film and/or a
crystalline oxide film on a second principal plane located on an
opposite side to the first principal plane of the aluminum nitride
substrate.
Advantageous Effects
[0129] In one embodiment of the present invention, the inside of
the chamber is heated with the water molecules being introduced in
the chamber where the aluminum nitride film is arranged. Thus, it
is possible to form an oxide film, including an amorphous oxide
film and/or a crystalline oxide film and having a refractive index
smaller than that of the aluminum nitride film, on the second
principal plane of the aluminum nitride film. As a result, it is
possible to remarkably improve the light extraction efficiency from
the second principal plane of the aluminum nitride film.
[0130] In addition, in the process of forming the above-described
oxide film (that is, oxide film forming process), no mask has to be
formed with the use of a photolithography technique. Further, no
dry etching process has to be carried out on the surface of the
oxide film or the second principal plane of the aluminum nitride
film. Accordingly, the mass productivity is good, and an etching
damage onto the aluminum nitride film or the semiconductor layer
can be suppressed.
[0131] Furthermore, in the oxide film forming process, after the
semiconductor layer is formed, an oxide film is formed on the
second principal plane. An uneven structure is formed on the second
principal plane, instead that an optical pattern with the light
extraction efficiency is arranged on a surface (at the interface
between the substrate and the semiconductor layer) of the substrate
on which the semiconductor layer is made to grow. Hence, a
degradation in crystal property of the semiconductor layer can be
suppressed without affecting a crystal defect occurrence at the
time of the semiconductor layer growth in the oxide film forming
process.
INDUSTRIAL APPLICABILITY
[0132] The present invention relates to a manufacturing method of a
semiconductor light-emitting element, and the semiconductor
light-emitting element, in particular, relates to an element with a
high light-emitting efficiency in a nitride semiconductor
light-emitting element formed on an aluminum nitride substrate.
REFERENCE SIGNS LIST
[0133] 1 aluminum nitride substrate [0134] 1a first principal plane
[0135] 1b second principal plane [0136] 10 semiconductor layer
[0137] 11 n-type semiconductor layer [0138] 13 light-emitting layer
[0139] 15 electron blocking layer [0140] 17 p-type semiconductor
layer [0141] 20 oxide film [0142] 21 amorphous oxide film [0143] 23
crystalline oxide film [0144] 31 insulating film [0145] 33, 35
electrode portion [0146] 50 oxide film forming device [0147] 51
chamber [0148] 53 stage [0149] 55 nozzle [0150] 61 H.sub.2O supply
source [0151] 81 heater [0152] 90 controller [0153] 100
semiconductor light-emitting element
* * * * *