Method Of Fabricating A Light Emitting Diode Device

Abstract

The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.

Description

CROSS-REFERENCE TO RELATED APPLICATION

[0001] This application is a continuation application of U.S. application Ser. No. 13/661,272, filed on Oct. 26, 2012, now allowed. The prior U.S. application Ser. No. 13/661,272 claims the priority benefit of Taiwan application serial no. 100143830, filed on Nov. 29, 2011. The entirety of each of the above-mentioned patent applications is hereby incorporated by reference herein and made a part of this specification.

FIELD OF THE INVENTION

[0002] The present invention relates generally to a method of fabricating a light emitting diode (LED) device, and particularly to a method of fabricating an LED device having excellent Ohmic-contact characteristics and light emitting efficiency.

BACKGROUND OF THE INVENTION

[0003] Electricity is an indispensable energy nowadays. No matter lighting devices, home appliances, communication apparatuses, transportation, or industrial equipment, without electricity, none can operate. Current global energy mainly comes from burning petroleum or coal. However, the supply of petroleum or coal is not inexhaustible. If people don't search actively for alternative energy, when petroleum or coal is exhausted, the world will encounter energy crisis. For solving the problem of energy crisis, in addition to developing positively various kinds of renewable energy, it is required to save energy and use energy efficiently for improving the usage efficiency of energy.

[0004] Take lighting equipment as an example. Light equipment is indispensable in human lives. As technologies develop, lighting tools having better luminance and more power saving are gradually provided. Currently, an emerging light source is LED. In comparison with light sources according to prior art, LEDs have the advantage of small size, power saving, good light emitting efficiency, long lifetime, fast response time, no thermal radiation, and no pollution of poisonous materials such as mercury. Thereby, in recent years, the applications of LEDs are wide-spreading. In the past, the brightness of LEDs still cannot replace the light sources according to the prior art. As the technologies advance, high-luminance LEDs (high-power LEDs) are developed recently and sufficient to replace the light sources according to the prior art.

[0005] The epitaxial structure of LED is composed of semiconductor layers of p-type and n-type gallium-nitride family and light emitting layers. The light emitting efficiency of LED is determined by the quantum efficiency of the light emitting layer as well as the extraction efficiency of the LED. The method for increasing the quantum efficiency is mainly to improve the epitaxial quality and the structure of the light emitting layer; the key to increasing the extraction efficiency is to reduce the energy loss caused by reflection of the light emitted by the light emitting layer within the LED.

[0006] Depending on the property of the material of the p-type semiconductor layer and the work function of the metal used as the reflection layer, an Ohmic-contact or a Schottky contact is formed between the p-type semiconductor layer and the reflection layer of a general LED. When the resistance of an Ohmic-contact is too high, the operating characteristics of LED will be affected. It is thereby required to lower the resistance of the Ohmic-contact. The Ohmic-contact characteristics between the p-type semiconductor layer and the reflection layer can be improved by disposing an Ohmic-contact layer therebetween. The Ohmic-contact layer according to the prior art adopts a Ni/Au Ohmic-contact layer and heat treatment is performed on the Ohmic-contact layer for forming a good Ohmic-contact. Nonetheless, the light absorption rate of the Ni/Au Ohmic-contact layer is higher. Besides, the interface between the p-type semiconductor layer and the Ni--Au Ohmic-contact layer is roughened due to the heat treatment and leading to inability in reflecting light. Consequently, the reflection efficiency of the LED will be reduced.

[0007] For solving the problems described above, please refer to FIG. 1, which shows a structure diagram of the LED device according to the prior art. As shown in the figure, an Ohmic-contact layer 11' is disposed between the p-type semiconductor layer 10' and the reflection layer 12'. The Ohmic-contact layer 11' uses a single-layer metal-oxide layer and has high electrical conductivity. Although the Ohmic-contact layer 11' has high electrical conductivity, it lowers the light transmittance, and hence leading to lowering of the light emitting efficiency of the LED. If the Ohmic-contact layer 11' has high light transmittance, its electrical conductivity will be reduced, making the Ohmic-contact characteristics of the Ohmic-contact layer 11' inferior. Thereby, the Ohmic-contact layer 11' according to the prior art, which adopts a single-layer metal-oxide layer, cannot have good Ohmic-contact characteristics while maintaining superior light emitting efficiency.

[0008] Accordingly, the present invention provides an LED device and a flip-chip packaged LED device having excellent Ohmic-contact characteristics as well as superior light emitting efficiency.

SUMMARY

[0009] An objective of the present invention is to provide an LED device. The LED device can enhance its Ohmic-contact characteristics effectively while maintaining superior light emitting efficiency.

[0010] A method of fabricating an LED device according to an embodiment of the present invention comprises: sequentially forming a first-type doping layer, a light emitting layer and a second-type doping layer on a substrate; forming an Ohmic-contact layer on the second-type doping layer; forming a material layer and a metal layer on the Ohmic-contact layer, wherein the material layer at least comprises a metal oxide layer; and forming a first electrode and a second electrode the first-type doping layer and the metal layer respectively, wherein the first electrode is electrically connected to the first-type doping layer and the second electrode is electrically connected to the Ohmic-contact layer through the metal layer.

[0011] A method of fabricating an LED device according to an embodiment of the present invention comprises: sequentially forming a first-type doping layer, a light emitting layer and a second-type doping layer on a substrate; forming an Ohmic-contact layer on the second-type doping layer; forming an oxide stacking layer and a metal reflection layer on the Ohmic-contact layer, wherein the oxide stacking layer comprises a plurality of stacked oxide layers; and forming a first electrode and a second electrode the first-type doping layer and the metal reflection layer respectively, wherein the first electrode is electrically connected to the first-type doping layer, the second electrode is electrically connected to the Ohmic-contact layer, and the oxide stacking layer and the metal reflection layer are disposed between the second electrode and the Ohmic-contact layer.

[0012] A method of fabricating an LED device according to an embodiment of the present invention comprises: sequentially forming a first-type doping layer, a light emitting layer and a second-type doping layer on a substrate; forming an Ohmic-contact layer on the second-type doping layer; forming an oxide stacking layer and a metal reflection layer on the Ohmic-contact layer, wherein the oxide stacking layer comprises a plurality of stacked oxide layers; and forming a first electrode and a second electrode the first-type doping layer and the metal reflection layer respectively, wherein the first electrode is electrically connected to the first-type doping layer, the oxide stacking layer and the metal reflection layer are disposed between the second electrode and the Ohmic-contact layer, and the second electrode is electrically connected to the Ohmic-contact layer through the metal reflection layer.

[0013] A method of fabricating an LED device according to an embodiment of the present invention comprises: sequentially forming a first-type doping layer, a light emitting layer and a second-type doping layer on a substrate; forming an Ohmic-contact layer on the second-type doping layer; forming a metal reflection layer and at least one oxide layer on the Ohmic-contact layer, wherein the at least one oxide layer is disposed between the Ohmic-contact layer and the metal reflection layer; and forming a first electrode and a second electrode the first-type doping layer and the metal reflection layer respectively, wherein the first electrode is electrically connected to the first-type doping layer, the second electrode is electrically connected to the Ohmic-contact layer, and the metal reflection layer disposed between the second electrode and the Ohmic-contact layer.

[0014] A method of fabricating an LED device according to an embodiment of the present invention comprises: sequentially forming a first-type doping layer, a light emitting layer and a second-type doping layer on a substrate; forming an Ohmic-contact layer on the second-type doping layer; forming a metal reflection layer and at least one oxide layer on the Ohmic-contact layer; and forming a first electrode and a second electrode the first-type doping layer and the metal reflection layer respectively, wherein the first electrode is electrically connected to the first-type doping layer, the metal reflection layer and the at least one oxide layer are disposed between the second electrode and the Ohmic-contact layer, and the second electrode is electrically connected the Ohmic-contact layer through the metal reflection layer.

[0015] A method of fabricating an LED device according to an embodiment of the present invention comprises: sequentially forming a first-type doping layer, a light emitting layer and a second-type doping layer on a substrate; forming an Ohmic-contact layer on the second-type doping layer; forming a material stacking layer on the Ohmic-contact layer, wherein the material stacking layer comprises a plurality of first material layers and a plurality of second material layers alternately stacked, and light transmittance of the first material layers differs from light transmittance of the second material layers; and forming a first electrode and a second electrode the first-type doping layer and the material stacking layer respectively, wherein the first electrode is electrically connected to the first-type doping layer, the second electrode is electrically connected to the Ohmic-contact layer, and the material stacking layer is disposed between the second electrode and the Ohmic-contact layer.

[0016] According to the present invention, the highly conductive Ohmic-contact layer is used for giving good current conduction between the second-type doping layer and the reflection layer of the LED device and thus improving the Ohmic-contact characteristics of the LED device. In addition, the present invention further uses the planarized buffer layer disposed between the Ohmic-contact layer and the reflection layer for making the surface of the Ohmic-contact layer smooth, which facilitates smooth adhesion of the reflection layer to the planarized buffer layer as well as reducing the scattering phenomenon of the reflected light. Thereby, superior light emitting efficiency can be achieved.

BRIEF DESCRIPTION OF THE DRAWINGS

[0017] FIG. 1 shows a structure diagram of the LED device according to the prior art;

[0018] FIG. 2 shows a structure diagram according to a preferred embodiment of the present invention;

[0019] FIG. 3 shows a structure diagram according to another preferred embodiment of the present invention;

[0020] FIG. 4 shows a structure diagram according to another preferred embodiment of the present invention; and

[0021] FIG. 5 shows a structure diagram according to another preferred embodiment of the present invention.

DETAILED DESCRIPTION

[0022] In order to make the structure and characteristics as well as the effectiveness of the present invention to be further understood and recognized, the detailed description of the present invention is provided as follows along with embodiments and accompanying figures.

[0023] FIG. 2 shows a structure diagram according to a preferred embodiment of the present invention. As shown in the figure, the present embodiment provides an LED device 22, which comprises a device substrate 221, a first-type doping layer 222, a light emitting layer 223, a second-type doping layer 224, an Ohmic-contact layer 225, a planarized buffer layer 226, a reflection layer 227, and two electrodes 228, 229. The first-type doping layer 222 is disposed on the device substrate 221; the light emitting layer 223 is disposed on the first-type doping layer 222; and the second-type doping layer 224 is disposed on the light emitting layer 223. According to the present embodiment, the first-type doping layer 222 is an n-type semiconductor layer, and the second-type doping layer 224 is a p-type semiconductor layer. Besides, the Ohmic-contact layer 225 is a metal thin film or a metal-oxide layer with light transmittance higher than 90% and thickness less than 5000 angstroms (.ANG.). The metal thin film can be composed by gold, nickel, platinum, aluminum, chrome, tin, indium, and their mixtures or alloys. The metal-oxide layer is chosen from the group consisting of indium-tin oxide, cerium-tin oxide, antimony-tin oxide, indium-zinc oxide, and zinc oxide.

[0024] Besides, the planarized buffer layer 226 is disposed on the Ohmic-contact layer 225. The planarized buffer layer 226 is a metal-oxide layer with light transmittance greater than 95%; the metal-oxide layer is chosen from the group consisting of indium-tin oxide, cerium-tin oxide, antimony-tin oxide, indium-zinc oxide, and zinc oxide. The reflection layer 227 is disposed on the planarized buffer layer 226. The root-mean-square roughness of the surface between the planarized buffer layer 226 and the reflection layer 227 is less than 20 .ANG.. The reflection layer 227 is chosen from the group consisting of silver, gold, aluminum, and copper. Finally, the two electrodes 228, 229 are disposed on the first-type doping layer 222 and the reflection layer 227, respectively.

[0025] FIG. 3 shows a structure diagram according to another preferred embodiment of the present invention. As shown in the figure, the LED device 22 according to the above embodiment is used in a flip-chip packaged LED device 2, which comprises a packaging substrate 20 and the LED device 22. The LED device 22 is flipped on and connected electrically with the packaging substrate 20. The LED device 22 is connected electrically with the packaging substrate 20 by a eutectic structure 24.

[0026] The Ohmic-contact characteristics between the second-type doping layer 224 and the reflection layer 227 in the above embodiment is enhanced mainly by means of the Ohmic-contact layer 225. Because the Ohmic-contact layer 225 has high electrical conductivity, the current conduction between the second-type doping layer 224 and the reflection layer 227 can be improved effectively, and thus enhancing the Ohmic-contact characteristics between the second-type doping layer 224 and the reflection layer 227.

[0027] Because the Ohmic-contact layer 225 has high electrical conductivity, its light transmittance is lowered. In order to maintain the light transmittance of the Ohmic-contact layer 225, its thickness is less than 5000 .ANG.. Thereby, the light emitted by the light emitting layer 223 will not be absorbed too much by the Ohmic-contact layer 225, and hence enabling the light emitting efficiency of the LED device unaffected.

[0028] Because the thickness of the Ohmic-contact layer 225 is very thin, its surface is relatively rougher. For avoiding the scattering phenomenon on the reflected light produced by the surface of the Ohmic-contact layer 225, according to the present embodiment, the planarized buffer layer 226 is used for mending the surface of the Ohmic-contact layer 225. The thickness of the planarized buffer layer 226 is between 500 to 5000 .ANG. for reducing effectively the scattering phenomenon on the reflected light produced by the surface of the Ohmic-contact layer 225. The root-mean-square roughness of the surface between the planarized buffer layer 226 and the reflection layer 227 is less than 20A for adhering the reflection layer 227 smoothly to the planarized buffer layer 226. In addition, the reflection layer 227 can have the effect of mirror reflection by means if the planarized buffer layer 226.

[0029] The thickness of the Ohmic-contact layer 225 according to the present embodiment is thinner with light transmittance greater than 90%. Thereby, the light emitted by the light emitting layer 223 will not be absorbed too much by the Ohmic-contact layer 225; most of the light can transmit the Ohmic-contact layer 225. Besides, the light transmittance of the planarized buffer layer 226 is higher than 95%. Most of the light can transmit the planarized buffer layer 226 and reach the reflection layer 227. Hence, the light emitting efficiency of the LED device 22 will not be affected.

[0030] By comparing the present invention with the prior art, it is known that according to the prior art, only the Ohmic-contact layer, which is a single-layer metal-oxide layer, is disposed between the reflection layer and the second-type doping layer. By making the Ohmic-contact layer highly electrically conductive, its light transmittance will be lowered, leading to reduction in the light emitting efficiency of the LED device, which, in turn, lowers the light emitting efficiency of the flip-chip packaged LED device. If the Ohmic-contact layer is thinned, its surface will be rough, resulting in scattering of the reflected light. The LED device 22 according to the present invention adopts the planarized buffer layer 226 disposed on the thin Ohmic-contact layer 225 for reducing the scattering phenomenon on the reflected light owing to the surface of the Ohmic-contact layer 225. In addition, the Ohmic-contact layer 225 according to the present embodiment can make the Ohmic-contact characteristics between the second-type doping layer 224 and the reflection layer 227 superior without affecting the light emitting efficiency of the LED device 22. Accordingly, the light emitting efficiency of the flip-chip packaged LED device 2 will not be affected either.

[0031] FIG. 4 shows a structure diagram according to another preferred embodiment of the present invention. As shown in the figure, in addition to the embodiment shown in FIG. 2, the LED device 22 further comprises a cover layer 230 disposed between the reflection layer 227 and the electrode 229 and extending to the sidewall of the reflection layer 227. The cover layer 230 is used for prevent the migration phenomenon of the metal ions in the reflection layer 227.

[0032] FIG. 5 shows a structure diagram according to another preferred embodiment of the present invention. As shown in the figure, the present embodiment provides another LED device 22. The difference between the LED device 22 and the one in FIG. 2 is that the LED device 22 according to the present embodiment has a plurality of Ohmic-contact layers 225a and a plurality of planarized buffer layers 226a stacked together. Each Ohmic-contact layer 225a has the characteristics of high electrical conductivity and high refractivity. Thereby, before part of the light emitted by the light emitting layer 223 reaches the reflection layer 227, the light has already been refracted by the plurality of Ohmic-contact layers 225a for enhancing the light emitting efficiency of the flip-chip packages LED device 2. Besides, the plurality of planarized buffer layers 226a have the effect of smoothening each Ohmic-contact layer 225a. Hence, the scattering phenomenon on the reflected light caused by the surface of each Ohmic-contact layer 225a can be avoided.

[0033] To sum up, the present invention provides an LED device and a flip-chip packages LED device. The LED device is flipped on and connected electrically with the packaging substrate and thus forming the flip-chip packaged LED device. The LED device has the Ohmic-contact layer and the planarized buffer layer. The Ohmic-contact layer enhances the current conduction between the second-type doping layer and the reflection layer and thus improving the Ohmic-contact characteristics of the LED device. The planarized buffer layer smoothens the surface of the Ohmic-contact layer, which enables the reflection layer to attach to the planarized buffer layer smoothly and achieving the effect of mirror reflection as well as reducing the scattering phenomenon of the reflected light. By disposing the Ohmic-contact layer and the planarized buffer layer, the LED device and the flip-chip packages LED device according to the present invention can have superior Ohmic-contact characteristics without affecting the light emitting efficiency thereof.

[0034] Accordingly, the present invention conforms to the legal requirements owing to its novelty, nonobviousness, and utility. However, the foregoing description is only embodiments of the present invention, not used to limit the scope and range of the present invention. Those equivalent changes or modifications made according to the shape, structure, feature, or spirit described in the claims of the present invention are included in the appended claims of the present invention.

Claims

1. A method of fabricating a light emitting diode device, comprising: sequentially forming a first-type doping layer, a light emitting layer and a second-type doping layer on a substrate; forming an Ohmic-contact layer on the second-type doping layer; forming a material layer and a metal layer on the Ohmic-contact layer, wherein the material layer at least comprises a metal oxide layer; and forming a first electrode and a second electrode the first-type doping layer and the metal layer respectively, wherein the first electrode is electrically connected to the first-type doping layer and the second electrode is electrically connected to the Ohmic-contact layer through the metal layer.

2. The method of claim 1, wherein a light transmittance of the Ohmic-contact layer is greater than 90%.

3. The method of claim 1, wherein a light transmittance of the material layer is greater than 95%.

4. The method of claim 1 further comprising: forming a cover layer, wherein the cover layer is disposed on the metal layer and extends to a sidewall of the metal layer.

5. The method of claim 1, wherein a portion of the light emitted from the light emitting layer passes through the Ohmic-contact layer as well as the material layer and is reflected by the metal layer.

6. A method of fabricating a light emitting diode device, comprising: sequentially forming a first-type doping layer, a light emitting layer and a second-type doping layer on a substrate; forming an Ohmic-contact layer on the second-type doping layer; forming an oxide stacking layer and a metal reflection layer on the Ohmic-contact layer, wherein the oxide stacking layer comprises a plurality of stacked oxide layers; and forming a first electrode and a second electrode the first-type doping layer and the metal reflection layer respectively, wherein the first electrode is electrically connected to the first-type doping layer, the second electrode is electrically connected to the Ohmic-contact layer, and the oxide stacking layer and the metal reflection layer are disposed between the second electrode and the Ohmic-contact layer.

7. The method of claim 6, wherein a light transmittance of the Ohmic-contact layer is greater than 90%.

8. The method of claim 6 further comprising: forming a cover layer, wherein the cover layer is disposed between the metal reflection layer and the second electrode.

9. The method of claim 6, wherein a portion of the light emitted from the light emitting layer passes through the Ohmic-contact layer and is reflected by the metal reflection layer.

10. A method of fabricating a light emitting diode device, comprising: sequentially forming a first-type doping layer, a light emitting layer and a second-type doping layer on a substrate; forming an Ohmic-contact layer on the second-type doping layer; forming an oxide stacking layer and a metal reflection layer on the Ohmic-contact layer, wherein the oxide stacking layer comprises a plurality of stacked oxide layers; and forming a first electrode and a second electrode the first-type doping layer and the metal reflection layer respectively, wherein the first electrode is electrically connected to the first-type doping layer, the oxide stacking layer and the metal reflection layer are disposed between the second electrode and the Ohmic-contact layer, and the second electrode is electrically connected to the Ohmic-contact layer through the metal reflection layer.

11. The method of claim 10, wherein a light transmittance of the Ohmic-contact layer is greater than 90%.

12. The method of claim 10 further comprising: forming a cover layer, wherein the cover layer is disposed between the metal reflection layer and the second electrode.

13. The method of claim 10, wherein a portion of the light emitted from the light emitting layer passes through the Ohmic-contact layer and is reflected by the metal reflection layer.

14. A method of fabricating a light emitting diode device, comprising: sequentially forming a first-type doping layer, a light emitting layer and a second-type doping layer on a substrate; forming an Ohmic-contact layer on the second-type doping layer; forming a metal reflection layer and at least one oxide layer on the Ohmic-contact layer, wherein the at least one oxide layer is disposed between the Ohmic-contact layer and the metal reflection layer; and forming a first electrode and a second electrode the first-type doping layer and the metal reflection layer respectively, wherein the first electrode is electrically connected to the first-type doping layer, the second electrode is electrically connected to the Ohmic-contact layer, and the metal reflection layer disposed between the second electrode and the Ohmic-contact layer.

15. The method of claim 14, wherein a light transmittance of the Ohmic-contact layer is greater than 90%.

16. The method of claim 14, wherein a light transmittance of the oxide layer is greater than 95%.

17. The method of claim 14 further comprising: forming a cover layer, wherein the cover layer is disposed between the metal reflection layer and the second electrode.

18. The method of claim 14, wherein a portion of the light emitted from the light emitting layer passes through the Ohmic-contact layer as well as the oxide layer and is reflected by the metal reflection layer.

19. A method of fabricating a light emitting diode device, comprising: sequentially forming a first-type doping layer, a light emitting layer and a second-type doping layer on a substrate; forming an Ohmic-contact layer on the second-type doping layer; forming a metal reflection layer and at least one oxide layer on the Ohmic-contact layer; and forming a first electrode and a second electrode the first-type doping layer and the metal reflection layer respectively, wherein the first electrode is electrically connected to the first-type doping layer, the metal reflection layer and the at least one oxide layer are disposed between the second electrode and the Ohmic-contact layer, and the second electrode is electrically connected the Ohmic-contact layer through the metal reflection layer.

20. The method of claim 19, wherein a light transmittance of the Ohmic-contact layer is greater than 90%.

21. The method of claim 19, wherein a light transmittance of the oxide layer is greater than 95%.

22. The method of claim 19 further comprising: forming a cover layer, wherein the cover layer is disposed between the metal reflection layer and the second electrode.

23. The method of claim 19, wherein a portion of the light emitted from the light emitting layer passes through the Ohmic-contact layer and is reflected by the metal reflection layer.

24. A method of fabricating a light emitting diode device, comprising: sequentially forming a first-type doping layer, a light emitting layer and a second-type doping layer on a substrate; forming an Ohmic-contact layer on the second-type doping layer; forming a material stacking layer on the Ohmic-contact layer, wherein the material stacking layer comprises a plurality of first material layers and a plurality of second material layers alternately stacked, and light transmittance of the first material layers differs from light transmittance of the second material layers; and forming a first electrode and a second electrode the first-type doping layer and the material stacking layer respectively, wherein the first electrode is electrically connected to the first-type doping layer, the second electrode is electrically connected to the Ohmic-contact layer, and the material stacking layer is disposed between the second electrode and the Ohmic-contact layer.

25. The method of claim 24, wherein a light transmittance of the Ohmic-contact layer is greater than 90%.

26. The method of claim 24 further comprising: forming a metal layer disposed between the second electrode and the Ohmic-contact layer.

27. The method of claim 26, wherein a portion of the light emitted from the light emitting layer passes through the Ohmic-contact layer and is reflected by the metal layer.