U.S. patent application number 14/884630 was filed with the patent office on 2016-02-04 for photodiode.
The applicant listed for this patent is Kabushiki Kaisha Toshiba. Invention is credited to Shigeyuki Sakura, Yuichi Tagami.
Application Number | 20160035928 14/884630 |
Document ID | / |
Family ID | 52624788 |
Filed Date | 2016-02-04 |
United States Patent
Application |
20160035928 |
Kind Code |
A1 |
Tagami; Yuichi ; et
al. |
February 4, 2016 |
PHOTODIODE
Abstract
According to one embodiment, a photodiode includes a first
semiconductor layer of a first conductivity type, a second
semiconductor layer of a second conductivity type, a third
semiconductor layer of the first conductivity type, and a film. The
second semiconductor layer is provided in the first semiconductor
layer. The third semiconductor layer is provided in the first
semiconductor layer so as to surround the second semiconductor
layer. Each of one ends of the second and third semiconductor
layers is located at an upper surface of the first semiconductor
layer. The first to third semiconductor layers include first to
third impurity concentrations respectively. The second and third
impurity concentrations are higher than the first impurity
concentration. The film is provided above the third semiconductor
layer, and blocks light to enter into a neighborhood of the third
semiconductor layer.
Inventors: |
Tagami; Yuichi;
(Fukuoka-ken, JP) ; Sakura; Shigeyuki;
(Kanagawa-ken, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Kabushiki Kaisha Toshiba |
Tokyo |
|
JP |
|
|
Family ID: |
52624788 |
Appl. No.: |
14/884630 |
Filed: |
October 15, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
14166176 |
Jan 28, 2014 |
9190550 |
|
|
14884630 |
|
|
|
|
Current U.S.
Class: |
257/435 |
Current CPC
Class: |
H01L 31/03529 20130101;
H01L 31/02164 20130101; Y02E 10/50 20130101; H01L 31/022408
20130101; H01L 31/105 20130101; H01L 31/02005 20130101 |
International
Class: |
H01L 31/105 20060101
H01L031/105; H01L 31/02 20060101 H01L031/02; H01L 31/0352 20060101
H01L031/0352; H01L 31/0216 20060101 H01L031/0216; H01L 31/0224
20060101 H01L031/0224 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 9, 2013 |
JP |
2013-186017 |
Claims
1. A photodiode, comprising: a first semiconductor layer of a first
conductivity type having a first impurity concentration; a second
semiconductor layer of a second conductivity type provided in the
first semiconductor layer, and having a second impurity
concentration higher than the first impurity concentration; a third
semiconductor layer of the first conductivity type provided in the
first semiconductor layer so as to surround the second
semiconductor layer, and having a third impurity concentration
higher than the first impurity concentration; and a film provided
above the third semiconductor layer, and blocking light to enter
into a neighborhood of the third semiconductor layer.
2. The photodiode according to claim 1, wherein a width of the film
is larger than a width of the third semiconductor layer, and an
edge of the film is in the third semiconductor layer side from an
edge of a depletion layer, the depletion layer extending to the
third semiconductor layer side from a pn junction of the first and
second semiconductor layers.
3. The photodiode according to claim 1, wherein the third
semiconductor layer with a polygon shape or a circle shape
surrounds the second semiconductor layer in a shape of polygon or
circle.
4. The photodiode according to claim 1, further comprising a fourth
semiconductor layer of the first conductivity type provided in the
first semiconductor layer, one end of the fourth semiconductor
layer being located at the upper surface of the first semiconductor
layer, and having a width larger than a width of the third
semiconductor layer and a fourth impurity concentration higher than
the first impurity concentration, wherein the end of the third
semiconductor layer is located at a lower surface of the fourth
semiconductor layer.
5. The photodiode according to claim 4, wherein the fourth
semiconductor layer is electrically connected to a common voltage
line.
6. The photodiode according to claim 1, wherein the first
semiconductor layer is provided on a semiconductor substrate of the
first conductivity type.
7. The photodiode according to claim 1, further comprising: a first
electrode electrically connected to the second semiconductor layer;
and a second electrode electrically connected to the third
semiconductor layer.
8. The photodiode according to claim 1, wherein the third
semiconductor layer is substantially equal to the first
semiconductor layer in thickness.
9. The photodiode according to claim 6, wherein the semiconductor
substrate is electrically connected to a common voltage line.
10. The photodiode according to claim 1, further comprising an
insulating film with translucency provided on at least the first
and third semiconductor layers, wherein the film is provided on the
insulating film.
11. The photodiode according to claim 1, wherein the film surrounds
the second semiconductor layer in plan view.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application is a Continuation of application Ser. No.
14/166,176, filed on Jan. 28, 2014, which is based upon and claims
the benefit of priority from the prior Japanese Patent Application
2013-186017, filed on Sep. 9, 2013, the entire contents of which
are incorporated herein by reference.
FIELD
[0002] Embodiments described herein are generally related to a
photodiode.
BACKGROUND
[0003] In the back ground art, lateral pin photodiodes are known.
The lateral pin photodiode has a p-type semiconductor layer, an
i-type semiconductor layer and an n-type semiconductor layer. The
p-type semiconductor layer and the n-type semiconductor layer are
disposed parallel to a surface of a semiconductor substrate. The
i-type semiconductor layer is interposed between the p-type
semiconductor layer and the n-type semiconductor layer.
[0004] The lateral pin photodiode detects light to enter into the
i-type semiconductor layer.
[0005] When the i-type semiconductor layer is a p-type
semiconductor layer with a sufficiently low impurity concentration,
the n-type semiconductor layer and the i-type semiconductor layer
form a pn-junction. A depletion layer of the pn-junction extends to
the p-type semiconductor layer side rather than the n-type
semiconductor layer side. When light enters into the i-type
semiconductor layer, the light is absorbed inside the i-type
semiconductor layer to generate carrier.
[0006] The carrier which is generated inside the depletion layer
flows as drift current. The carrier which is generated outside the
depletion layer flows as diffusion current. As a result, a
sufficient response speed of the lateral pin photodiode is not
obtained.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] FIGS. 1A and 1B are views showing a photodiode according to
an embodiment. FIG. 1A is the plan view of the photodiode. FIG. 1B
is the cross-sectional view of the photodiode taken along a line
A-A of FIG. 1A.
[0008] FIG. 2 is a graph showing response characteristics of the
photodiode according to the embodiment in comparison with a
photodiode of a comparative example.
[0009] FIGS. 3A and 3B are views showing the photodiode of the
comparative example according to the embodiment. FIG. 3A is the
plan view of the photodiode. FIG. 3B is the cross-sectional view of
the photodiode taken along a line B-B of FIG. 3A.
[0010] FIGS. 4A, 4B, 5A, 5B and 6 are cross-sectional views showing
steps of manufacturing the photodiode in order according to the
embodiment.
[0011] FIG. 7 is a cross-sectional view showing another photodiode
according to the embodiment.
[0012] FIG. 8 is a cross-sectional view showing another photodiode
according to the embodiment.
DETAILED DESCRIPTION
[0013] According to one embodiment, a photodiode includes a first
semiconductor layer of a first conductivity type, a second
semiconductor layer of a second conductivity type, a third
semiconductor layer of the first conductivity type, and a film. The
first semiconductor layer has a first impurity concentration. The
second semiconductor layer is provided in the first semiconductor
layer, an one end of the second semiconductor layer being located
at an upper surface of the first semiconductor layer, and has a
second impurity concentration higher than the first impurity
concentration. The third semiconductor layer is provided in the
first semiconductor layer so as to surround the second
semiconductor layer, an one end of the second semiconductor layer
being located at the upper surface of the first semiconductor
layer, and has a third impurity concentration higher than the first
impurity concentration. The film is provided above the third
semiconductor layer, and blocks light to enter into a neighborhood
of the third semiconductor layer.
[0014] Embodiments will be described below with reference to the
drawings. In the drawings, the same reference numerals show the
same or similar portions. The same portions in the drawings are
denoted by the same numerals and a detailed explanation of the same
portions is appropriately omitted, and different portions will be
described.
Embodiment
[0015] A photodiode in accordance with an embodiment will be
described with reference to FIGS. 1A and 1B. FIGS. 1A and 1B are
views showing the photodiode of the embodiment. FIG. 1A is the plan
view of the photodiode. FIG. 1B is the cross-sectional view of the
photodiode taken along a line A-A of FIG. 1A, viewed from the
arrows.
[0016] The photodiode of the embodiment is a lateral pin-photodiode
having a p-type semiconductor layer, an i-type semiconductor layer
and a n-type semiconductor layer. The p-type semiconductor layer
and the n-type semiconductor layer are disposed parallel to a
surface of a semiconductor substrate. The i-type semiconductor
layer is interposed between the p-type semiconductor layer and the
n-type semiconductor layer.
[0017] The lateral pin photodiode detects light to enter into the
i-type semiconductor layer. Hereinafter, the lateral pin photodiode
is simply referred to as the photodiode.
[0018] As shown in FIGS. 1A and 1B, a photodiode 10 of the
embodiment is provided on a semiconductor substrate 11. The
semiconductor substrate 11 is a p-type (a first conductivity type)
silicon substrate, for example. A p-type first semiconductor layer
12 is provided on the semiconductor substrate 11. The first
semiconductor layer 12 has a first impurity concentration of
approximately 1E13cm.sup.-3 and a thickness of approximately 10
.mu.m, for example. Since the first impurity concentration is low
enough, the first semiconductor layer 12 is considered to be an
i-type semiconductor layer.
[0019] An n-type (a second conductivity type) second semiconductor
layer 13 is provided in the first semiconductor layer 12, an one
end of the second semiconductor layer 13 is located at an upper
surface 12a of the first semiconductor layer 12. The second
semiconductor layer 13 has a shape of column, for example. The
second semiconductor layer 13 has a second impurity concentration
of approximately 1E18 to 1E19 cm.sup.-3, and a thickness of
approximately 3 to 4 .mu.m, for example. The second impurity
concentration is higher than the first impurity concentration.
[0020] A p-type third semiconductor layer 14 is provided in the
first semiconductor layer 12 so as to surround the second
semiconductor layer 13, an one end of the third semiconductor layer
14 is located at the upper surface 12a of the first semiconductor
layer 12. The third semiconductor layer 14 has a third impurity
concentration of approximately 1E18 to 1E19 cm.sup.-3, and a
thickness of approximately 3 to 4 .mu.m, for example. The third
impurity concentration is higher than the first impurity
concentration.
[0021] The distance between the second semiconductor layers 13 is
approximately 10 to 20 .mu.m. A width of the third semiconductor
layer 14 is approximately 1 to 2 .mu.m.
[0022] The third semiconductor layer 14 has a hexagonal shape in
which the second semiconductor layer 13 is center, for example. Two
or more second semiconductor layers 13 and two or more third
semiconductor layers 14 are provided, and are arranged in a
honeycomb shape.
[0023] The lateral pin photodiode 10 is formed of the third
semiconductor layer 14, the first semiconductor layer 12, and the
second semiconductor layer 13. The third semiconductor layer 14 is
an anode of the photodiode 10, and the second semiconductor layer
13 is a cathode of the photodiode 10.
[0024] An insulating film 15 with translucency is provided on the
first semiconductor layer 12, the second semiconductor layer 13,
and the third semiconductor layer 14. The insulating film 15 is a
silicon dioxide film, for example.
[0025] A film 16 is provided above the third semiconductor layer
14. The film 16 is provided on the third semiconductor layer 14
through the insulating film 15. The film 16 is a metallic film, for
example.
[0026] In plan view, the edge of the film 16 is outside the edge of
the third semiconductor layer 14 and inside an edge of a depletion
layer. The depletion layer extends to the third semiconductor layer
14 side from a pn junction of the first semiconductor layer 12 and
the second semiconductor layer 13. A width of the depletion layer
is dependent on the first impurity concentration of the first
semiconductor layer 12 and the second impurity concentration of the
second semiconductor layer 13, and is approximately 3 to 5
.mu.m.
[0027] More specifically, a width of the film 16 is larger than the
width of the third semiconductor layer 14.
[0028] Since the film 16 prevents a portion of light 19a from
entering into the first semiconductor layer 12 when the edge of the
film 16 is outside the edge of the depletion layer, a detection
sensitivity of the photodiode 10 becomes lower. Accordingly, it is
not preferable that the edge of the film 16 is outside the edge of
the depletion layer.
[0029] An electrode (a first electrode) 17 is provided on the
insulating film 15. The electrode 17 is electrically connected to
the second semiconductor layer 13 through a via penetrating the
insulating film 15. The electrode 17 is a cathode electrode of the
photodiode 10. An electrode (a second electrode) not shown is
electrically connected to the third semiconductor layer 14. The
second electrode is an anode electrode of the photodiode 10.
[0030] The light 19 which enters into the first semiconductor layer
12 is absorbed inside the first semiconductor layer 12 to generate
carrier (electron-hole pair). The photodiode 10 outputs the
generated carrier as photo current. The outputted photo current is
taken into a signal processing circuit (not shown). The photo
current sequentially reaches the third semiconductor layer 14 from
the second semiconductor layer 13 by way of the electrode 17, the
signal processing circuit, and the electrode (the second electrode)
which is not shown.
[0031] Much light 19a among the light 19 enters into the first
semiconductor layer 12. Meanwhile, the film 16 prevents the light
19b from entering into a neighborhood 18 of the third semiconductor
layer 14.
[0032] The light 19a which enters into the first semiconductor
layer 12 is absorbed inside the first semiconductor layer 12 to
generate carrier. The generated carrier is accelerated by electric
field in the depletion layer of the pn junction to flow as drift
current with high speed.
[0033] When a p-type semiconductor layer and an n-type
semiconductor layer are joined, conduction electron and hole couple
in the pn junction to form a depletion layer in which majority
carrier is lacking. In the depletion layer, the n-type
semiconductor layer side is charged in positive, and the p-type
semiconductor layer side is charged in negative. Accordingly,
electric field to pull back electron and hole to the n-type
semiconductor layer and the p-type semiconductor layer respectively
is generated, and voltage difference (diffusion potential) is
generated at the both ends of the depletion layer. When carrier is
injected into the depletion layer, the injected carrier serves as
drift current which flows in accordance with the electric field.
The higher the impurity concentration is, the larger the diffusion
potential becomes.
[0034] When the pn junction is a step junction, the diffusion
potential is expressed as VD=(kT/q) ln(Na.times.Nd/ni.sup.2). K
denotes Boltzmann constant, T denotes absolute temperature, q
denotes electric charge, NA denotes acceptor density, ND denotes
donor density, and ni denotes intrinsic carrier density.
[0035] FIG. 2 is a graph showing response characteristics of the
photodiode 10 in comparison with a photodiode of a comparative
example. FIGS. 3A and 3B are views showing the photodiode of the
comparative example. FIG. 3A is the plan view of the photodiode.
FIG. 3B is the cross-sectional view of the photodiode taken along a
line B-B of FIG. 3A, viewed from the arrows. Firstly, the
photodiode of the comparative example will be described.
[0036] As shown in FIGS. 3A and 3B, a photodiode 30 of a
comparative example has the same fundamental structure as the
photodiode 10 shown in FIGS. 1A and 1B. The photodiode 30 is
different from the photodiode 10 in that the photodiode 30 does not
include the film 16.
[0037] Since the photodiode 30 does not include the film 16, the
light 19b among the light 19 reaches a portion of the first
semiconductor layer 12 which is the neighborhood 18 of the third
semiconductor layer 14. The light 19b which reaches the first
semiconductor layer 12 is absorbed inside the first semiconductor
layer 12 to generate carrier.
[0038] Since the neighborhood 18 of the third semiconductor 14 is
separated from the edge of the depletion layer (transition region)
of the pn junction formed by the first semiconductor layer 11 and
the second semiconductor layer 12, the neighborhood 18 of the third
semiconductor 14 is a region which is not sufficiently depleted.
Accordingly, the carrier which is generated in the neighborhood 18
of the third semiconductor 14 is not affected by the electric field
to flow as diffusion current.
[0039] A distance between the second semiconductor layer 13 and the
third semiconductor layer 14 is approximately 5 to 10 .mu.m, and is
larger than the width of the depletion layer with approximately 3
to 5 .mu.m. When the pn junction is a step junction, the width of
the depletion layer is expressed as W= (2.epsilon./q)
(1/NA+1/ND)VD). .epsilon. denotes permittivity of semiconductor
layer.
[0040] In FIG. 2, a broken line 21 indicates light signal which
enters into photodiodes 10, 30, solid line 22 indicates response
characteristics of the photodiode 10, and a chain line 23 indicates
response characteristics of the photodiode 30.
[0041] As shown in FIG. 2, it is assumed that the light 19 with
rectangular wave form is entered at time t1. A rise time of the
photodiode 10 is approximately same as a rise time of the
photodiode 30.
[0042] It is assumed that the light 19 with rectangular wave form
is cut off at time t2. A response of the photodiode 10 falls at
time t3. A response of the photodiode 30 falls at time t4 longer
than time t3. A fall time of the photodiode 10 is shorter than a
fall time of the photodiode 30.
[0043] Since the photodiode 30 of the comparative example does not
include the film 16, the carrier still remains in the neighborhood
18 of the third semiconductor layer 14 after cutting off the light
19. Since the remaining carrier flows as diffusion current with
slow speed, the rise time of the photodiode 30 becomes inevitably
long.
[0044] On the other hand, since the photodiode 10 of the embodiment
includes the film 16, the carrier which remains in the neighborhood
18 of the third semiconductor layer 14 after cutting off the light
19 does not exist. Accordingly, the diffusion current with slow
speed does not flow. As a result, the film 16 enables the rise time
of the photodiode 10 to shorten.
[0045] A method of manufacturing the photodiode 10 will be
explained. FIGS. 4A, 4B, 5A, 5B and 6 are cross-sectional views
showing steps of manufacturing the photodiode 10 in order.
[0046] As shown in FIG. 4A, the first semiconductor layer 12 is
epitaxially grown on the silicon substrate 11 by vapor phase growth
method, for example. dichlorosilane (SiH.sub.2Cl.sub.2) gas is used
as a process gas, for example. diborane (B.sub.2H.sub.6) gas is
used as a dopant gas, for example.
[0047] As shown in FIG. 4B, a resist film 41 having an opening 41a
to expose a portion of the first semiconductor layer 12 in which
the second semiconductor layer 13 is to be formed is formed on the
first semiconductor layer 12 by photolithography method. The second
semiconductor layer 13 is formed by implanting phosphor ion (P+)
into the portion of the first semiconductor layer 12 using the
resist film 41 as a mask.
[0048] As shown in FIG. 5A, a resist film 42 having a honeycomb
shaped opening 42a to expose a portion of the first semiconductor
layer 12 in which the third semiconductor layer 14 is to be formed
is formed on the first semiconductor layer 12 by photolithography
method. The third semiconductor layer 14 is formed by implanting
boron ion (B+) into the portion of the first semiconductor layer 12
using the resist film 42 as a mask.
[0049] As shown in FIG. 5B, a silicon oxide film as the insulating
film 15 is formed on the first to third semiconductor layers 12,
13, 14 by chemical vapor deposition (CVD) method, for example. An
opening 44 to expose a portion of the second semiconductor layer 13
is formed in the insulating film 15 by photolithography method.
[0050] As shown in FIG. 6, a metallic film 45 to fill the opening
44 and cover the insulating film 15 is formed by sputtering method,
for example. The metallic film 45 is an aluminum film, for example.
A resist film 46 having an opening 46a to expose a portion of the
metallic film 45 except a region in which the film 16 and the
electrode 17 are to be formed is formed on the metallic film 45 by
photolithography method.
[0051] The metallic film 45 is removed using the resist film 46 as
a mask by reactive ion etching (RIE) method, for example.
Accordingly, the electrode 17 which is electrically connected to
the second semiconductor layer 13 and the film 16 which blocks the
light 19b entering into the neighborhood 18 of the third
semiconductor layer 14 are simultaneously formed.
[0052] As described above, since the photodiode 10 of the
embodiment has the film 16 to block the light 19b which enters into
the neighborhood 18 of the third semiconductor layer 14, the
carrier is not generated into the neighborhood 18 of the third
semiconductor layer 14. Accordingly, since the carrier which
remains into the neighborhood 18 of the third semiconductor layer
14 when the light 19 is cut off does not exist, the fall time of
the photodiode 10 can be shortened. As a result, a photodiode with
a fast response speed is obtained.
[0053] The description has been made here as to the case where the
third semiconductor layer 14 has the honeycomb shape. However,
another shape such as a ring shape and a grid shape may be
available as long as the third semiconductor layer 14 surrounds the
second semiconductor layer 13. Since a distance between the second
semiconductor layer 13 and the third semiconductor layer 14 becomes
constant when the third semiconductor layer 14 has the ring shape,
a distance between the third semiconductor layer 14 and the edge of
the depletion layer also becomes constant. An advantage that a
margin of the film 16 is increased is obtained. The margin means an
acceptable range of the position of the edge of the film 16, for
example.
[0054] The description has been made as to the case where a reverse
bias voltage is not applied to the photodiode 10. However, the
reverse bias voltage may be applied to the photodiode 10. Since the
depletion layer further extends to the third semiconductor layer 14
side by applying reverse bias voltage to the photodiode 10, an
advantage that the margin of the film 16 is further increased is
obtained.
[0055] The description has been made as to the case where the first
conductivity type is p-type and the second conductivity type is
n-type. However, the same advantage may be obtained when the first
conductivity type is the n-type and the second conductivity type is
the p-type. FIG. 7 is a cross-sectional view showing a photodiode
50 in which the first conductivity type is the n-type and the
second conductivity type is the p-type.
[0056] The photodiode 50 is the same as the photodiode 10 shown in
FIGS. 1A and 1B except the conductivity type. The explanation of
the photodiode 50 is omitted.
[0057] A shield layer to shield electromagnetic noise may be
provided on the photodiode. FIG. 8 is a cross-sectional view
showing a photodiode having a shield layer.
[0058] As shown in FIG. 8, in a photodiode 60, a p-type fourth
semiconductor layer (a shield layer) 61 is provided in the first
semiconductor layer 12, an one end of the fourth semiconductor
layer 61 is located at the upper surface 12a of the first
semiconductor layer 12, the third semiconductor layer 14 is
provided in the first semiconductor layer 12, an one end of the
third semiconductor layer 14 is located at the other end of the
fourth semiconductor layer 61.
[0059] A width of the fourth semiconductor layer 61 is larger than
the width of the third semiconductor layer 14. The fourth
semiconductor layer 61 has a fourth impurity concentration of
approximately 1E18 cm.sup.-3 and a thickness of approximately 0.2
.mu.m. The fourth impurity concentration is higher than the first
impurity concentration. The width of the fourth semiconductor layer
61 is not especially limited unless the fourth semiconductor layer
61 is in contact with the second semiconductor layer 13.
[0060] The fourth semiconductor layer 61 and the substrate 11 are
connected to ground (a common voltage line). Since the first
semiconductor layer 12 is interposed between the fourth
semiconductor layer 61 and the substrate 11 which are connected to
the ground, the electromagnetic noise is prevented from entering
into the first semiconductor layer 12. The fourth semiconductor
layer 61 functions as a shield layer to shield the electromagnetic
noise.
[0061] Since the fourth semiconductor layer 61 has the width within
a range in which absorption of the light 19 is disregarded, the
fourth semiconductor layer 61 does not affect a detection
sensitivity of the photodiode 60.
[0062] While certain embodiments have been described, these
embodiments have been presented by way of example only, and are not
intended to limit the scope of the inventions. Indeed, the novel
embodiments described herein may be embodied in a variety of other
forms; furthermore, various omissions, substitutions and changes in
the form of the embodiments described herein may be made without
departing from the spirit of the inventions. The accompanying
claims and their equivalents are intended to cover such forms or
modifications as would fall within the scope and spirit of the
inventions.
* * * * *