U.S. patent application number 14/878034 was filed with the patent office on 2016-01-28 for method of manufacturing a semiconductor device using photolithographic rinse solution.
The applicant listed for this patent is SAMSUNG ELECTRONICS CO., LTD.. Invention is credited to Hyunwoo KIM, Su Min KIM, Chawon KOH, Hyojin YUN.
Application Number | 20160026090 14/878034 |
Document ID | / |
Family ID | 50066514 |
Filed Date | 2016-01-28 |
United States Patent
Application |
20160026090 |
Kind Code |
A1 |
KOH; Chawon ; et
al. |
January 28, 2016 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING
PHOTOLITHOGRAPHIC RINSE SOLUTION
Abstract
A photolithographic rinse solution includes deionized water, and
a surfactant, the surfactant including a cyclic amine group and at
least one non-amine cyclic group joined to or fused with the cyclic
amine group, wherein the cyclic amine group includes a ring having
a carbon number of 4 to 6, and the non-amine cyclic group includes
a ring having a carbon number of 5 to 8.
Inventors: |
KOH; Chawon; (Yongin-si,
KR) ; KIM; Su Min; (Suwon-si, KR) ; KIM;
Hyunwoo; (Seongnam-si, KR) ; YUN; Hyojin;
(Suwon-si, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SAMSUNG ELECTRONICS CO., LTD. |
Suwon-si |
|
KR |
|
|
Family ID: |
50066514 |
Appl. No.: |
14/878034 |
Filed: |
October 8, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13962173 |
Aug 8, 2013 |
9158204 |
|
|
14878034 |
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Current U.S.
Class: |
430/311 |
Current CPC
Class: |
G03F 7/426 20130101;
H01L 21/0206 20130101; G03F 7/16 20130101; G03F 7/20 20130101; G03F
7/32 20130101; G03F 7/40 20130101 |
International
Class: |
G03F 7/40 20060101
G03F007/40; G03F 7/20 20060101 G03F007/20; G03F 7/32 20060101
G03F007/32; G03F 7/16 20060101 G03F007/16 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 8, 2012 |
KR |
10-2012-0086810 |
Claims
1.-10. (canceled)
11. A method of manufacturing a semiconductor device, the method
comprising: coating a photoresist on a substrate; performing an
exposure process and a development process on the photoresist to
form a photoresist pattern; and cleaning the developed photoresist
pattern with a rinse solution, wherein: the development process is
a negative-tone development (NTD) process; and the rinse solution
includes an organic solvent.
12. The method as claimed in claim 11, wherein the organic solvent
includes one of acetone, ethanol, isopropanol, n-decane (DEC),
n-heptane, n-hexane, n-octane, perfluoroheptane, perfluorohexane,
or perfluorooctane.
13. The method as claimed in claim 11, wherein the organic solvent
has a surface tension within a range of about 5 mN/m to about 25
mN/m.
14. The method as claimed in claim 11, wherein: the rinse solution
includes one of acetone, n-decane (DEC), n-heptane, n-hexane,
n-octane, perfluoroheptane, perfluorohexane, or perfluorooctane;
and the rinse solution further includes one of ethanol,
isopropanol, or t-butyl alcohol.
15.-20. (canceled)
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This is a divisional application based on pending
application Ser. No. 13/962,173, filed Aug. 8, 2013, the entire
contents of which is hereby incorporated by reference.
[0002] Korean Patent Application No. 10-2012-0086810, filed on Aug.
8, 2012, in the Korean Intellectual Property Office, and entitled:
"Photo Lithographic Rinse Solution and Method of Manufacturing A
Semiconductor Device Using the Same," is incorporated by reference
herein in its entirety.
BACKGROUND
[0003] 1. Field
[0004] Embodiments relate to a photolithographic rinse solution and
methods of manufacturing a semiconductor device using the same.
[0005] 2. Description of the Related Art
[0006] High speed and/or low voltage semiconductor devices have
been desirable for high speed and lower power consumption
electronic devices. The semiconductor devices have become more
highly integrated. Microfabrication techniques such as
photolithographic techniques have been developed for improving the
integration degree of the semiconductor devices.
SUMMARY
[0007] Embodiments are directed to a photolithographic rinse
solution including deionized water and a surfactant. The surfactant
includes a cyclic amine group and at least one non-amine cyclic
group fused with the cyclic amine group. The cyclic amine group
includes a ring having a carbon number of 4 to 6. The non-amine
cyclic group includes a ring having a carbon number of 5 to 8.
[0008] The cyclic amine group may be represented by one of the
following chemical formulas 1 and 2,
##STR00001##
where "R.sub.1" denotes hydrogen or an alkyl group having a carbon
number of 1 to 10.
[0009] The non-amine cyclic group may be an aromatic ring group or
an alicyclic group.
[0010] The surfactant may further include an ester group joined to
the cyclic amine group.
[0011] The cyclic amine group having the ester group joined thereto
may be represented by one of the following chemical formulas 3, 4,
and 5,
##STR00002##
where "A.sub.1" denotes --Z.sub.1 or --C(.dbd.O)--Z.sub.2, each of
"Z.sub.1" and "Z.sub.2" denotes an alkyl group having a carbon
number of 2 to 31 or an alkyl group substituted with fluorine,
"R.sub.1" denotes hydrogen or an alkyl group having a carbon number
of 1 to 10, and "n" denotes an integer of 1 to 20.
[0012] The surfactant may further include an aliphatic group joined
to the ester group.
[0013] The surfactant may be represented by one of the following
chemical formulas 6 to 10,
##STR00003##
where "R.sub.1" denotes hydrogen or an alkyl group having a carbon
number of 1 to 10, "R.sub.2" denotes hydrogen or fluorine,
"R.sub.3" denotes hydrogen or fluorine, "R.sub.4" denotes hydrogen,
fluorine, or an alkyl group having a carbon number of 1 to 10, and
"n" denotes an integer of 1 to 20.
[0014] A concentration of the surfactant in the photolithographic
rinse solution may be within a range of about 0.01 wt % to about
1.0 wt %.
[0015] The photolithographic rinse solution may further include a
fluorine-based non-ionic surfactant or a fluorine-based negative
ionic surfactant.
[0016] The photolithographic rinse solution may further include one
of ethanol, isopropanol, and t-butyl alcohol.
[0017] Embodiments are also directed to a method of manufacturing a
semiconductor device, the method including coating a photoresist on
a substrate, performing an exposure process and a development
process on the photoresist to form a photoresist pattern, and
cleaning the developed photoresist pattern with a rinse solution,
in which the development process is a negative-tone development
(NTD) process. The rinse solution includes an organic solvent.
[0018] The organic solvent may include one of acetone, ethanol,
isopropanol, n-decane (DEC), n-heptane, n-hexane, n-octane,
perfluoroheptane, perfluorohexane, or perfluorooctane.
[0019] The organic solvent may have a surface tension within a
range of about 5 mN/m to about 25 mN/m.
[0020] The rinse solution may include one of acetone, n-decane
(DEC), n-heptane, n-hexane, n-octane, perfluoroheptane,
perfluorohexane, or perfluorooctane. The rinse solution may further
include one of ethanol, isopropanol, or t-butyl alcohol.
[0021] Embodiments are also directed to a method of manufacturing a
semiconductor device, the method including coating a photoresist on
a substrate, performing an exposure process and a development
process on the photoresist to form a photoresist pattern, and
cleaning the developed photoresist pattern with the
photolithographic rinse solution including the surfactant that
includes a cyclic amine group and at least one non-amine cyclic
group joined to or fused with the cyclic amine group, as described
above.
[0022] Embodiments are also directed to a photolithographic rinse
solution including deionized water, and a surfactant, the
surfactant being a polycyclic amine compound substituted with an
ester group.
[0023] The polycyclic amine compound may include a cyclic amine
group and at least one non-amine cyclic group fused with the cyclic
amine group, the amine group being substituted with the ester
group.
[0024] The polycyclic amine compound substituted with an ester
group may be represented by one of the following chemical formulas
6 to 10,
##STR00004##
where "R.sub.1" denotes hydrogen or an alkyl group having a carbon
number of 1 to 10, each of "R.sub.2" and "R.sub.3" denotes hydrogen
or fluorine, "R.sub.4" denotes hydrogen, fluorine, or an alkyl
group having a carbon number of 1 to 10, and "n" denotes an integer
of 1 to 20.
[0025] The polycyclic amine compound substituted with an ester
group may be represented by one of the following chemical formulas
11 to 13:
##STR00005##
[0026] The photolithographic rinse solution may be for cleaning a
developed photoresist pattern.
BRIEF DESCRIPTION OF THE DRAWINGS
[0027] Features will become apparent to those of skill in the art
by describing in detail exemplary embodiments with reference to the
attached drawings in which:
[0028] FIGS. 1 to 3 illustrate molecule structural formulas of
surfactants according to exemplary embodiments;
[0029] FIG. 4 a schematic cross-sectional view for explaining a
cause of generating a collapse of a photoresist pattern;
[0030] FIG. 5 illustrates a flowchart illustrating a method of
manufacturing a semiconductor device using a photolithographic
rinse solution according to exemplary embodiments;
[0031] FIG. 6 illustrates a schematic block diagram illustrating an
example of electronic systems including semiconductor device
according to exemplary embodiments; and
[0032] FIG. 7 illustrates a schematic block diagram illustrating an
example of memory cards including semiconductor device according to
exemplary embodiments.
DETAILED DESCRIPTION
[0033] Example embodiments will now be described more fully
hereinafter with reference to the accompanying drawings; however,
they may be embodied in different forms and should not be construed
as limited to the embodiments set forth herein. Rather, these
embodiments are provided so that this disclosure will be thorough
and complete, and will fully convey exemplary implementations to
those skilled in the art.
[0034] In the drawing figures, the dimensions of layers and regions
may be exaggerated for clarity of illustration. Like reference
numerals refer to like elements throughout.
[0035] The terminology used herein is for the purpose of describing
particular embodiments only and is not intended to limit the
invention. As used herein, the singular terms "a," "an" and "the"
are intended to include the plural forms as well, unless the
context clearly indicates otherwise. As used herein, the term
"and/or" includes any and all combinations of one or more of the
associated listed items.
[0036] According to some embodiments, a photolithographic rinse
solution includes deionized water (DI water) and a surfactant. The
surfactant may have a concentration within a range of about 0.01 wt
% to about 1.0 wt % in the photolithographic rinse solution.
[0037] The surfactant may be a surfactant compound that includes
cyclic amine group and a non-amine cyclic group joined to or fused
with the cyclic amine group. The cyclic amine group may include a
ring having a carbon number of 4 to 6. For example, the cyclic
amine group may be expressed as one of the following chemical
formulas 1 and 2.
##STR00006##
[0038] In chemical formulas 1 and 2, "R.sub.1" denotes hydrogen, or
an alkyl group having a carbon number of 1 to 10. The non-amine
cyclic group joined to the cyclic amine group may include a ring
having a carbon number of 5 to 8. The non-amine cyclic group may be
an aromatic ring group or an alicyclic group. For example, the
non-amine cyclic group may be a benzene group or a cyclohexane
group. The cyclic amine group may be a bulky cyclic amine group
combined with at least one of the non-amine cyclic group.
[0039] The surfactant compound may further include an ester group
connected to the cyclic amine. For example, the cyclic amine group
connected to the ester group may be expressed as one of the
following chemical formulas 3, 4, and 5.
##STR00007##
[0040] In chemical formulas 3, 4, and 5, "A.sub.1" denotes
--Z.sub.1 or --C(.dbd.O)--Z.sub.2, each of "Z.sub.1" and "Z.sub.2"
denotes an alkyl group having a carbon number of 2 to 31, the alkyl
group being unsubstituted or substituted with fluorine, "R.sub.1"
denotes hydrogen or an alkyl group having a carbon number of 1 to
10, and "n" denotes an integer of 1 to 20. The ester group may
connect a hydrophilic group (N) in the cyclic amine to a
hydrophobic group described below.
[0041] In chemical formulae 1 through 5, it is to be understood
that the non-amine cyclic group may be joined to or fused with the
cyclic amine group at any suitable ring position(s) on the cyclic
amine.
[0042] The surfactant compound may further include an aliphatic
compound combined with the ester group.
[0043] The surfactant compound may be expressed as one of the
following chemical formulas 6 to 10.
##STR00008##
[0044] In chemical formulas 6 to 10, "R.sub.1" denotes hydrogen or
an alkyl group having a carbon number of 1 to 10, each of "R.sub.2"
and "R.sub.3" denotes hydrogen or fluorine, "R.sub.4" denotes
hydrogen, fluorine, or an alkyl group having a carbon number of 1
to 10, and "n" denotes an integer of 1 to 20. Nitrogen (N) in the
cyclic amine may have hydrophilicity. The R.sub.2, R.sub.3, and
R.sub.4 in the aliphatic group combined with the ester group may
have hydrophobicity.
[0045] Furthermore, in chemical formulas 6 through 10, it may be
understood that a cyclohexane group, for example, may be joined to
or fused with the cyclic amine group at any suitable ring
position(s) on the cyclic amine, instead of the benzene group
joined to or fused with the cyclic amine group.
[0046] FIGS. 1 to 3 illustrate structural formulas of surfactant
compounds according to some embodiments. (The structural formulas
are also referred to herein as chemical formulas 11 to 13.)
Referring to FIGS. 1 to 3, each of the surfactants according to
some embodiments may include a cyclic amine group fused with a
benzene ring, forming, for example, an indoline group, and a
fluorine-based aliphatic group connected the cyclic amine group by
way of the ester group. The molecule structural formula illustrated
in FIG. 1 represents a surfactant compound in which R.sub.1 is
hydrogen and an alkyl group partially substituted with fluorine is
joined the cyclic amine group by way of an ester group. The
molecule structural formula illustrated in FIG. 2 represents a
surfactant compound which R.sub.1 is hydrogen and in which an alkyl
group substituted with fluorine is joined to the cyclic amine group
by way of a carbonyl group and an ester group. The molecule
structural formula illustrated in FIG. 3 represents a surfactant
compound in which the R.sub.1 is CH.sub.3 and which an alkyl group
substituted with fluorine is joined with the cyclic amine group by
way of a carbonyl group and an ester group. Nitrogen and fluorine
in the surfactant compounds may function as a hydrophilic moiety
and the hydrophobic moiety, respectively.
[0047] According to an embodiment, DI water including the
surfactant may be used as a photolithographic rinse solution,
thereby lessening the possibility of collapse of a photoresist
pattern.
[0048] A width of the photoresist pattern may be made smaller in
order to provide high integration of a semiconductor device.
However, the photoresist pattern may be kept at a predetermined
thickness for etching a lower layer under the photoresist pattern.
Thus, an aspect ratio of the photoresist pattern may increase,
increasing the risk that the photoresist pattern could collapse. A
collapse of the photoresist pattern could occur, for example, as
the result of a capillary force caused by the surface tension of a
rinse solution used in a photolithography process.
[0049] FIG. 4 illustrates a schematic cross-sectional view for
explaining a possible cause of a collapse of a photoresist pattern.
Referring to FIG. 4, photoresist patterns 20 may be developed on a
substrate 10. After the photoresist patterns 20 are developed, the
photoresist patterns 20 may be cleaned by a photolithographic rinse
solution 30. During this process, the rinse solution 30 may be
present between the photoresist patterns 20. A capillary force
applied to walls of the photoresist pattern 20 may be calculated
with reference to FIG. 4 and equation 1:
.sigma. = 6 .gamma.cos .theta. d ( H L ) 2 [ equation 1 ]
##EQU00001##
[0050] In equation 1, "H" denotes a height of the photoresist
pattern 20, "L" denotes a width of the photoresist pattern 20, "d"
denotes a distance between the patterns 20, ".gamma." denotes the
surface tension of the rinse solution 30, ".theta." denotes a
contact angle of the pattern 20 and the rinse solution 30, and "6"
denotes a proportional constant. Referring to FIG. 4 and equation
1, it can be seen that the capillary force .sigma. is proportional
to the surface tension .gamma. of the rinse solution 30. Thus, if
the surface tension .gamma. of the rinse solution 30 can be
reduced, the risk of collapse of the photoresist pattern may be
reduced.
[0051] The photolithographic rinse solution according to some
embodiments may include a surfactant having a hydrophobic group for
reducing the surface tension thereof. For example, the hydrophobic
group in the surfactant may include fluorine. The surface tension
may be related to an attractive force between molecules. The DI
water may have a large surface tension due to hydrogen bonding
between molecules thereof. On the other hand, the surfactant may
have a small surface tension due to a small attractive force
between the hydrophobic groups. When the surfactant including the
hydrophobic groups is added to the DI water, the hydrophobic groups
of the surfactant may be located on the surface of the rinse
solution including the surfactant and the DI water. Thus, the
surface of the rinse solution may be covered by the hydrophobic
groups, so that the surface tension of the rinse solution may be
reduced. As a result, it may be possible to prevent or minimize
likelihood of collapse of the photoresist patterns.
[0052] Accordingly, the surfactant included in the
photolithographic rinse solution may also prevent the photoresist
pattern from dissolving. The surfactant may include the hydrophilic
group in the form of a bulky compound. In an embodiment, the bulky
compound may include a cyclic amine group and a non-amine cyclic
group joined to or fused with the cyclic amine group (forming, for
example, an indoline group). The surfactant may include a
hydrophilic group in the form of the nitrogen (N) in the cyclic
amine group. Nitrogen positive ions in the surfactant may react
with negative ions (e.g., OH--) of a surface of the photoresist
pattern, such that the surfactant may be drawn to penetrate the
surface of the photoresist pattern. In this case, however, the
surfactant may have steric hindrance due to the bulky cyclic amine
group being combined with the non-amine cyclic group. The steric
hindrance of the surfactant may restrain the rinse solution from
penetrating the surface of the photoresist pattern, so that the
dissolution of the photoresist pattern may be prevented or
minimized. Additionally, the nitrogen positive ions in the bulky
cyclic amine group may electrostatically interact with the negative
ions (e.g., OH--) of the surface of the photoresist pattern, such
that the surfactant may be adsorbed on the surface of the
photoresist pattern. As a result, line width roughness (LWR) of the
surface of the photoresist pattern can be improved.
[0053] The photolithographic rinse solution according to some
embodiments may further include a fluorine-based non-ionic
surfactant or a fluorine-based negative ionic surfactant. For
example, the fluorine-based non-ionic surfactant may be
RfCH.sub.2CH.sub.2O(CH.sub.2CH.sub.2O).sub.xH (where "x" denotes an
integer of 0 to 20, "Rf" denotes F(CF.sub.2CF.sub.2)y, and "y"
denotes an integer of 1 to 10). The fluorine-based non-ionic
surfactant or the fluorine-based negative ionic surfactant may have
a concentration of about 0.01 wt % to about 1.0 wt % in the
photolithographic rinse solution. The fluorine-based non-ionic
surfactant or the fluorine-based negative ionic surfactant may be
added for increasing solubility of the surfactant including the
cyclic amine group in the photolithographic rinse solution.
[0054] The photolithographic rinse solution according to some
embodiments may further include alcohol. For example, the alcohol
may be one of ethanol, isopropanol, and t-butyl alcohol. The
alcohol may have a concentration of about 0.1 wt % to about 10 wt %
in the photolithographic rinse solution. The alcohol may be added
for solvating and then removing a residue of the photoresist.
[0055] FIG. 5 illustrates a flowchart showing a method of
manufacturing a semiconductor device using a photolithographic
rinse solution according to exemplary embodiments. Referring to
FIG. 5, a photoresist may be coated on a substrate (S10). An
exposure process and a development process may be performed on the
photoresist coated on the substrate to form a photoresist pattern
(S20). A light source used in the exposure process may be an
extreme ultraviolet ray (EUV), and the development process may be a
positive-tone development (PTD) process. After the formation of the
photoresist pattern, the photoresist pattern may be cleaned using
the rinse solution according to embodiments (S30). Thus, it may be
possible to prevent or minimize likelihood of the collapse and
dissolution phenomenon and to improve the line width roughness
(LWR).
[0056] According to other embodiments, a photolithographic rinse
solution may include an organic solvent. For example, the organic
solvent may include one of acetone, ethanol, isopropanol, n-decane
(DEC), n-heptane, n-hexane, n-octane, perfluoroheptane,
perfluorohexane, and perfluorooctane. The organic solvent may have
a low surface tension within a range of about 5 mN/m to about 25
mN/m.
[0057] According to this embodiment, the photolithographic rinse
solution includes the organic solvent having the low surface
tension. Accordingly, it may be possible to prevent or minimize the
collapse of the photoresist pattern. As described above, a
photoresist pattern may be at risk of collapse due to the capillary
force caused by the surface tension of the rinse solution. In
contrast, according to this embodiment, the photolithographic rinse
solution may include the organic solvent that provides a low
surface tension within the range of about 5 mN/m to about 25 mN/m.
Accordingly, it may be possible to prevent or minimize the collapse
of the photoresist pattern.
[0058] The photolithographic rinse solution according to this
embodiment may further include alcohol. For example, if the
photolithographic rinse solution includes one of the above organic
solvents other than ethanol or isopropanol (such as, for example,
acetone, ethanol, isopropanol, n-decane (DEC), n-heptane, n-hexane,
n-octane, perfluoroheptane, perfluorohexane, or perfluorooctane),
the photolithographic rinse solution may further include an
alcohol. For example, the alcohol may be one of ethanol,
isopropanol, and t-butyl alcohol may have a concentration within a
range of about 0.1 wt % to about 10 wt % in the photolithographic
rinse solution. The alcohol may be added to the photolithographic
rinse solution for solving and then removing a residue of the
photoresist.
[0059] Referring to FIG. 5, a photoresist may be coated on a
substrate (S10), and then an exposure process and a development
process may be performed on the photoresist coated on the substrate
to form a photoresist pattern (S20). A light source of the exposure
process may be an extreme ultraviolet ray (EUV), and the
development process may be a negative-tone development (NTD)
process. After the formation of the photoresist pattern, the
photoresist pattern may be cleaned by the photolithographic rinse
solution according to above-described embodiments (S30). The
photolithographic rinse solution according to the above-described
embodiments may be used to clean the photoresist pattern formed by
the NTD process. Accordingly, it may be possible to prevent or
reduce the likelihood of collapse of the photoresist pattern formed
by the NTD process.
[0060] FIG. 6 illustrates a schematic block diagram depicting an
example of an electronic system including a semiconductor device
that is manufactured according to exemplary embodiments.
[0061] Referring to FIG. 6, an electronic system 1100 according to
an embodiment may include a controller 1110, an input/output (I/O)
unit 1120, a memory device 1130, an interface unit 1140 and a data
bus 1150. At least two of the controller 1110, the I/O unit 1120,
the memory device 1130 and the interface unit 1140 may communicate
with each other through the data bus 1150. The data bus 1150 may
correspond to a path through which electrical signals are
transmitted.
[0062] The controller 1110 may include at least one of a
microprocessor, a digital signal processor, a microcontroller, or
other logic devices having a similar function to any one of the
microprocessor, the digital signal processor and the
microcontroller. The I/O unit 1120 may include a keypad, a keyboard
and/or a display unit. The memory device 1130 may store data and/or
commands. The memory device 1130 may include at least one
semiconductor device manufactured using the photolithographic rinse
solution according to embodiments. The memory device 1130 may
further include a type of semiconductor memory device that is
different from the semiconductor devices described above. The
interface unit 1140 may operate by wireless or cable. For example,
the interface unit 1140 may include an antenna for wireless
communication or a transceiver for cable communication.
[0063] The electronic system 1100 may be applied to a personal
digital assistant (PDA), a portable computer, a web tablet, a
wireless phone, a mobile phone, a digital music player, a memory
card or other electronic products. The other electronic products
may receive or transmit information data by wireless
communication.
[0064] FIG. 7 illustrates a schematic block diagram depicting an
example of memory cards including semiconductor device according to
exemplary embodiments.
[0065] Referring to FIG. 7, a memory card 1200 according to an
embodiment may include a memory device 1210. The memory device 1210
may include at least one semiconductor device manufactured
according to the embodiments described above. The memory device
1210 may further include a type of semiconductor memory device that
is different from the semiconductor devices manufactured according
to the embodiments described above. The memory card 1200 may
further include a memory controller 1220 that controls data
communication between a host 1230 and the memory device 1210.
[0066] According to embodiments, the photolithographic rinse
solution may prevent or reduce the likelihood of collapse and
dissolution of the photoresist pattern and may improve the line
width roughness (LWR) of the photoresist pattern.
[0067] By way of summation and review, a photolithographic
technique may be used for defining fine electronic circuits on a
substrate when the semiconductor devices are formed. In a
photolithographic technique, light may be irradiated to a
photoresist coated on a substrate through a mask having printed
circuit patterns, so that the circuit patterns of the mask are
projected on the substrate. G-line, I-line, KrF, or ArF light
sources may be used as the light source in the photolithographic
technique. Recently, as the electronic circuit patterns have become
finer, extreme ultraviolet rays (EUV) have been used as the light
source to form fine and sophisticated photoresist patterns.
[0068] As the widths of photoresist patterns in semiconductor
devices has been reduced with the high integration of the
semiconductor devices, the thicknesses of the photoresist patterns
have maintained predetermined values for etching lower layers.
Thus, the aspect ratio of photoresist patterns has rapidly
increased. Due to high aspect ratios, there is a greater risk that
photoresist patterns could lean and/or collapse. After a
photoresist pattern is developed using a developing solution, the
photoresist pattern may be cleaned using deionized water to remove
the developing solution. However, deionized water that is present
between photoresist patterns may have a high surface tension, such
that a laterally attractive force may occur between the photoresist
patterns. Thus, photoresist patterns cleaned with only deionized
water may susceptible to leaning or collapsing. Additionally, the
photoresist patterns may be susceptible to collapsing due to a
capillary force caused by the surface tension of a rinse solution
when the rinse solution between the photoresist patterns is dried
by a spin method after the developing process.
[0069] A surfactant may be added into a rinse solution for
minimizing the collapse of the photoresist patterns. However, a
surfactant may penetrate a surface of the photoresist pattern to
cause a pattern dissolving phenomenon.
[0070] In contrast, embodiments provide a photolithographic rinse
solution that may prevent a collapse of a photoresist pattern.
[0071] Embodiments also provide photolithographic rinse solution
that may prevent the dissolution of a photoresist pattern and may
improve the line width roughness of the photoresist pattern.
[0072] Example embodiments have been disclosed herein, and although
specific terms are employed, they are used and are to be
interpreted in a generic and descriptive sense only and not for
purpose of limitation. Accordingly, it will be understood by those
of skill in the art that various changes in form and details may be
made without departing from the spirit and scope of the present
invention as set forth in the following claims.
* * * * *