U.S. patent application number 14/870117 was filed with the patent office on 2016-01-21 for semiconductor structure.
The applicant listed for this patent is Semiconductor Manufacturing International (Shanghai) Corporation. Invention is credited to JINGHUA NI, JIANPING WANG, JINGANG WU.
Application Number | 20160020215 14/870117 |
Document ID | / |
Family ID | 50546256 |
Filed Date | 2016-01-21 |
United States Patent
Application |
20160020215 |
Kind Code |
A1 |
WU; JINGANG ; et
al. |
January 21, 2016 |
SEMICONDUCTOR STRUCTURE
Abstract
Various embodiments provide semiconductor structures and
fabrication methods. In an exemplary method, a semiconductor
substrate can contain a shallow trench isolation (STI) structure
that includes a fuse region. A protective layer can be provided on
the high-K dielectric layer, which is provided on the semiconductor
substrate. A portion of each of the protective layer and the high-K
dielectric layer can be removed from the fuse region to expose the
STI structure. A fuse layer can be formed on the exposed surface of
the STI structure. A portion of the fuse layer, the remaining
portion of the protective layer, and a remaining portion of the
high-K dielectric layer outside of the fuse region can be removed
from the semiconductor substrate to form a fuse structure.
Inventors: |
WU; JINGANG; (Shanghai,
CN) ; WANG; JIANPING; (Shanghai, CN) ; NI;
JINGHUA; (Shanghai, CN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Semiconductor Manufacturing International (Shanghai)
Corporation |
Shanghai |
|
CN |
|
|
Family ID: |
50546256 |
Appl. No.: |
14/870117 |
Filed: |
September 30, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
14022387 |
Sep 10, 2013 |
9177913 |
|
|
14870117 |
|
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Current U.S.
Class: |
257/360 |
Current CPC
Class: |
H01L 23/535 20130101;
H01L 21/76224 20130101; H01L 27/11206 20130101; H01L 2924/0002
20130101; H01L 2924/0002 20130101; H01L 29/0649 20130101; H01L
2924/00 20130101; H01L 23/5256 20130101 |
International
Class: |
H01L 27/112 20060101
H01L027/112; H01L 23/535 20060101 H01L023/535; H01L 29/06 20060101
H01L029/06 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 31, 2012 |
CN |
2012-10428527.5 |
Claims
1.-14. (canceled)
15. A semiconductor structure, comprising: a semiconductor
substrate including a shallow trench isolation (STI) structure
formed therein, the STI structure including a fuse region; a high-K
dielectric layer disposed on the semiconductor substrate outside of
the fuse region; a protective layer disposed on the high-K
dielectric layer; and a fuse structure including a fuse layer
disposed on the STI structure in the fuse region and in direct
contact with a surface of the STI structure.
16. The structure of claim 15, further including a transistor
disposed on a surface portion of the semiconductor substrate,
wherein the transistor includes a gate dielectric layer including
the high-K dielectric layer, and a gate electrode layer including a
metal.
17. The structure of claim 16, wherein the transistor is formed by
forming a dummy gate structure while simultaneously forming the
fuse structure, wherein the dummy gate structure includes a fuse
layer disposed on a portion of each of the protective layer and the
high-K dielectric layer on the semiconductor substrate.
18. The structure of claim 15, wherein the fuse layer is made of
polycrystalline silicon or polycrystalline germanium; the
protective layer is made of titanium nitride, tantalum nitride, or
a combination thereof; and the STI structure is made of silicon
oxide.
19. The structure of claim 15, wherein the fuse layer in the fuse
structure includes: a cathode at one end and an anode at another
end of the fuse layer, and a blowing area between the cathode and
the anode.
20. The structure of claim 15, further including a plurality of
conductive plugs connected with a surface of each of the cathode
and the anode, wherein the plurality of conductive plugs are made
of a material including copper, tungsten, aluminum, or a
combination thereof.
21. The structure of claim 19, wherein: the blowing area has a
width less than at least one of the cathode and the anode;
22. The structure of claim 19, wherein: the cathode has a rectangle
shape and the anode has a trapezoid shape.
23. The structure of claim 19, wherein: the fuse layer is doped
with p-type ions or n-type ions.
Description
CROSS-REFERENCES TO RELATED APPLICATIONS
[0001] This application claims priority to Chinese Patent
Application No. CN201210428527.5, filed on Oct. 31, 2012, the
entire contents of which are incorporated herein by reference.
FIELD OF THE DISCLOSURE
[0002] The present disclosure relates to the field of semiconductor
fabrication technology and, more particularly, relates to
semiconductor structures and fabrication methods.
BACKGROUND
[0003] With the miniaturization and increasing complexity of
semiconductor technologies, semiconductor devices become more
easily affected by various defects or impurities. Failure of a
single metal wire, diode, or transistor often constitutes defects
of an entire chip. To solve this problem, conventional solutions
include use of fuses or fusible links formed in the integrated
circuits (ICs) to ensure usability of the ICs.
[0004] Fuses are used to connect redundant circuits in the ICs.
When defects are detected in a circuit, the fuses can be used to
repair or replace the defective circuit. In addition, fuses can
provide a programming function. A chip may include a circuit, a
device array, and a programming circuit. With data externally
inputted, the circuit design may include a programming circuit. For
example, in a programmable read-only memory (PROM), an open circuit
is produced by blowing open a fuse, having a logic state "1", while
an unopened fuse maintains a connected state having a logic state
"0".
[0005] Conventional fuse structures include a polysilicon fuse
structure. The polysilicon fuse structure is usually simultaneously
formed when forming a transistor having a high-K gate dielectric
layer and a metal gate layer formed by a gate last process. In the
gate last process, a dummy gate structure is formed on a
semiconductor substrate. The dummy gate structure includes a high-K
dielectric layer, a protective layer on the high-K
dielectric-layer, and a polysilicon layer on the protective layer.
A metal layer is then used to replace the polysilicon layer to form
the gate structure of the transistor.
[0006] During the gate last process, when the dummy gate structure
is formed on the semiconductor substrate, the polysilicon fuse
structure is formed on a shallow trench isolation (STI) structure.
FIGS. 1-2 depict formation of a conventional semiconductor
structure.
[0007] In FIG. 1, a semiconductor substrate 100 is provided
including a STI structure 101 formed therein. A high-K dielectric
layer 102 is formed on the semiconductor substrate 100 and on an
STI structure 101. A protective layer 103 is formed on the high-K
dielectric layer 102. A polysilicon layer 104 is formed on the
protective layer 103.
[0008] In FIG. 2, a portion of each of the polysilicon layer 104,
the protective layer 103, and the high-K dielectric layer 102 is
removed from the semiconductor substrate 100 and from the shallow
trench isolation structure 101 by an etching process. A dummy gate
structure 110 is thus formed on the semiconductor substrate 100,
and a fuse structure 120 is formed on the shallow trench isolation
structure 101.
[0009] The dummy gate structure 110 includes: a high-K dielectric
layer 102a, a protective layer 103a on the high-K dielectric layer
102a, and a polysilicon layer 104a on the protective layer 103a.
The fuse structure 120 includes: a high-K dielectric layer 102b, a
protective layer 103b on the high-K dielectric layer 102b, and a
polysilicon layer 104b on the protective layer 103b. After the
dummy gate structure 110 is formed, the polysilicon layer 104a of
the dummy gate structure 110 is removed from the protective layer
103a. A metal gate layer is then formed on the protective layer
103a to form a gate structure of the transistor.
[0010] Problems arise, however, because the fuse structure formed
on the protective layer and the high-K dielectric layer provides
unstable device performance.
BRIEF SUMMARY OF THE DISCLOSURE
[0011] According to various embodiments, there is provided a method
for forming a semiconductor structure. A semiconductor substrate
can be provided including a shallow trench isolation (STI)
structure formed therein. The STI structure can include a fuse
region. A high-K dielectric layer can be provided on the
semiconductor substrate including the STI structure. A protective
layer can be provided on the high-K dielectric layer. A portion of
each of the protective layer and the high-K dielectric layer can be
removed from the fuse region to expose a first surface portion of
the STI structure in the fuse region. A fuse layer can be formed on
each surface of a remaining portion of the protective layer and the
exposed first surface portion of the STI structure. A portion of
the fuse layer, the remaining portion of the protective layer, and
a remaining portion of the high-K dielectric layer can be removed
from the semiconductor substrate to expose a second surface portion
of the STI structure outside of the fuse region. A fuse structure
can be formed.
[0012] According to various embodiments, there is also provided a
semiconductor structure. The semiconductor structure can include a
semiconductor substrate including a shallow trench isolation (STI)
structure formed therein. The STI structure can include a fuse
region. A high-K dielectric layer can be disposed on the
semiconductor substrate outside of the fuse region. A protective
layer can be disposed on the high-K dielectric layer. A fuse
structure can include a fuse layer disposed on the STI structure in
the fuse region and in direct contact with a surface of the STI
structure.
[0013] As disclosed herein, a protective layer can be formed on a
high-K dielectric layer. The high-K dielectric layer can be formed
on a semiconductor substrate containing an STI structure. A portion
of each of the high-K dielectric layer and the protective layer in
a fuse region can be removed to expose a first surface portion of
the STI structure. A fuse layer can be formed on each surface of
the remaining protective layer, the STI structure, and the
semiconductor substrate (for example, which may also be used to
form a transistor). The fuse layer in the fuse region can be formed
directly on surface of the STI structure. When portions of each of
the fuse layer, the high-K dielectric layer, and the protective
layer outside of the fuse region are subsequently removed, a fuse
structure can be formed in direct contact with the STI structure.
Thus, electric current can be prevented from occurring between the
fuse structure and the STI structure. High voltages applied to blow
open the fuse structure are then able to be entirely applied to the
fuse structure. Therefore, desired blowing effect of the fuse
structure can be obtained. Device performance of the formed fuse
structure can be stable.
[0014] Further, a first patterned photoresist layer can be used as
an etch mask to remove a portion of each of the high-K dielectric
layer and the protective layer from the fuse region. A second
patterned photoresist layer can be used as an etch mask to remove
portions of the fuse layer, the high-K dielectric layer, and the
protective layer outside of the fuse region. Because the surface
area covered by the first patterned photoresist layer and the
surface area exposed by the second patterned photoresist layer are
the same, reversed photoresist materials can be used for the first
patterned photoresist layer and the second patterned photoresist
layer. A same photo mask can be used for the exposure processes to
form the first patterned photoresist layer and the second patterned
photoresist layer. There is no need to use a second photo mask.
Manufacturing process can be simplified and manufacturing cost can
be saved.
[0015] Other aspects or embodiments of the present disclosure can
be understood by those skilled in the art in light of the
description, the claims, and the drawings of the present
disclosure.
BRIEF DESCRIPTION OF THE DRAWINGS
[0016] FIGS. 1-2 depict formation of a conventional semiconductor
structure;
[0017] FIGS. 3-9 depict cross-sectional views of an exemplary
semiconductor structure at various stages during its formation in
accordance with various disclosed embodiments;
[0018] FIG. 10 depicts a top view of an exemplary fuse structure
shown in FIG. 9 in accordance with various disclosed embodiments;
and
[0019] FIGS. 11-12 depict exemplary methods for forming a
semiconductor structure in accordance with various disclosed
embodiments.
DETAILED DESCRIPTION
[0020] Reference will now be made in detail to exemplary
embodiments of the disclosure, which are illustrated in the
accompanying drawings. Wherever possible, the same reference
numbers will be used throughout the drawings to refer to the same
or like parts.
[0021] A fuse structure formed with a dummy gate structure of a
transistor (e.g., having a high-K gate dielectric layer) may have
unstable device performance. For example, referring to FIGS. 1-2,
in order to form a transistor including a high-K gate dielectric
layer 102a and a metal gate layer (not shown), a dummy gate
structure 110 needs to be formed first. The dummy gate structure
110 includes the high-K dielectric layer 102a, a protective layer
103a formed on the high-K dielectric layer 102a, and a polysilicon
layer 104a formed on the protective layer 103a.
[0022] The protective layer 103a is used to protect the underlying
high-K dielectric layer 102a and/or the metal gate layer formed
thereon. The protective layer 103a can be used to protect the
high-K dielectric layer 102a when subsequently forming the metal
gate layer on the protective layer 103a. Specifically, the
protective layer 103a can prevent metal atoms from diffusing from
the metal gate layer into the high-K dielectric layer 102a.
Further, the protective layer 103a can prevent process-generated
impurities from entering into the subsequently-formed metal gate
layer through the high-K dielectric layer 102a. In addition, the
protective layer 103a can protect the high-K dielectric layer 102a
from being damaged when removing the dummy gate layer, i.e., the
polysilicon layer 104a. The protective layer 103a is often made of
titanium nitride or tantalum nitride, which is electrically
conductive.
[0023] A fuse structure 120 formed with the dummy gate structure of
the transistor includes a high-K dielectric layer 102b, a
protective layer 103b disposed on the high-K dielectric layer 102b,
and a polysilicon layer 104b disposed on the protective layer 103b
as shown in FIG. 2. Because the protective layer 103b is
conductive, electrical conduction may occur between the polysilicon
layer 104b and the STI structure 101 during operation of the fuse
structure 120. Further, voltages applied to blow open the fuse
structure 120 are high voltages. However, under these high
voltages, some electric charges can pass through the high-K
dielectric layer 102b.
[0024] Therefore, when the high voltages are applied to the two
ends of the polysilicon layer 104b in the fuse structure 120 to
blow open the polysilicon layer 104b, the applied voltages are not
completely used for blowing open the polysilicon layer 104b and may
be further used in an additional conduction path due to the
conductivity of the protective layer 103b (and/or sometimes the
gate dielectric layer). Consequently, unstable operation
performance of the fuse structure may be generated.
[0025] As disclosed herein, after a high-K dielectric layer and a
protective layer are formed on a semiconductor substrate containing
shallow trench isolation (STI) structure therein, the protective
layer and the high-K dielectric layer can be removed from a fuse
region for forming a fuse structure. The subsequently-formed fuse
structure, e.g., formed by polysilicon, can be in direct contact
with the shallow trench isolation structure. In the case when the
fuse structure is blown open, the fuse structure can avoid the
problems that the applied high voltages are not completely used for
blowing open the fuse structure. The disclosed semiconductor
structures and methods can thus ensure the blowing effect of the
fuse structure. Stable operation performance can be obtained for
the fuse structure.
[0026] FIGS. 3-9 depict cross-sectional views of an exemplary
semiconductor structure at various stages during its formation,
while FIGS. 11-12 depict exemplary methods for forming a
semiconductor structure in accordance with various disclosed
embodiments. For example, the structures are described
corresponding to the methods, the structures and the methods are
not limited to each other in any manner.
[0027] In Step 1110 of FIG. 11 and referring to FIG. 3, a
semiconductor substrate 200 is provided. The semiconductor
substrate 200 can contain an isolation structure, e.g., a shallow
trench isolation (STI) structure 201. The STI structure 201 can
include a fuse region 232.
[0028] The semiconductor substrate 200 can be used to provide a
working platform for subsequent processes. For example, the
material of the semiconductor substrate 200 can be silicon,
silicon-germanium, silicon carbide, silicon-on-insulator, silicon
nitride, and/or Group III-V compounds (e.g., gallium arsenide,
etc.).
[0029] The STI structure 201 can be made of a material including,
e.g., silicon oxide. A fuse structure can be subsequently formed on
a surface of the STI structure 201, e.g., in the fuse region 232.
The fuse region 232 in the STI structure 201 defines a
corresponding position of the fuse structure to be subsequently
formed on the STI structure 201.
[0030] The semiconductor substrate 200 can have a portion outside
of the STI structure 201 and used to form a transistor. The
transistor can include, for example, a PMOS transistor, a NMOS
transistor, and/or a CMOS transistor. The fuse structure can be
formed during a formation process of the transistor. For example,
when the transistor includes a metal gate structure, a fuse
structure can be formed simultaneously when forming a dummy gate
structure of the transistor. The dummy gate structure can include a
dummy gate layer, a protective layer, and a high-K dielectric
layer.
[0031] Referring to FIG. 4, a high-K dielectric layer 202 is formed
on the semiconductor substrate 200 containing the STI structure 201
(e.g., in Step 1120 of FIG. 11). A protective layer 203 is formed
on the high-K dielectric layer 202 (e.g., in Step 1130 of FIG.
11).
[0032] The high-K dielectric layer 202 can be formed by a process
including, e.g., a chemical vapor deposition process or a physical
vapor deposition process. In one embodiment, a chemical vapor
deposition process can be used to form the high-K dielectric layer
202. The high-K dielectric layer 202 on the semiconductor substrate
200 can be used to form a gate dielectric layer of the transistor
to be formed on the semiconductor substrate 200 in subsequent
processes. The high-K dielectric layer 202 can be made of a high-K
dielectric material including, for example, hafnium oxide,
zirconium oxide, hafnium silicon oxide, lanthanum oxide, zirconium
silicon oxide, titanium oxide, tantalum oxide, barium strontium
titanium oxide, barium titanium oxide, strontium titanium oxide
and/or aluminum oxide. The high-K dielectric material used can
reduce thickness of the gate dielectric layer yet with improved
isolation effect. The high-K dielectric material can be suitable
for the ICs having small sizes.
[0033] The protective layer 203 can be formed by a process
including, e.g., a chemical vapor deposition process or a physical
vapor deposition process. In one embodiment, the protective layer
203 can be formed by the chemical vapor deposition process. The
protective layer 203 can be formed on the high-K dielectric layer
202. The protective layer 203 formed over the semiconductor
substrate 200 can be a part of a gate structure of the
subsequently-formed transistor. The protective layer 203 can
protect the underlying surface of the high-K dielectric layer 202
from being damaged during subsequent processes, e.g., when removing
the dummy gate layer. In addition, in a thermal annealing process
to activate source/drain regions, the protective layer 203 over the
semiconductor substrate 200 can prevent a gate electrode layer from
being contaminated by gas(es) released from the gate dielectric
layer of the transistor to be formed. The protective layer 203 can
be made of a material including, e.g., titanium nitride, tantalum
nitride, or a combination thereof.
[0034] In one case when a fuse layer is formed on the protective
layer 203 in a subsequent process, between the fuse layer and the
STI structure may include the protective layer 203 and high-K
dielectric layer 202 that are possibly electrical conductive.
Therefore, when high voltages are applied to blow open the fuse
structure, the high voltages may also be applied to the high-K
dielectric layer 202 and/or the protective layer 203 to generate
electric current. The blowing effect of the formed fuse structure
is then affected, and the device performance of the fuse structure
may be unstable.
[0035] As disclosed herein, to prevent generation of electric
current in the addition conduction path between the fuse layer and
the STI structure and to improve device performance of the fuse
structure to be formed, the high-K dielectric layer 202 and the
protective layer 203 can be removed prior to forming the fuse
layer. That is, the fuse layer can be formed directly on the STI
structure 201, and thus can provide the formed semiconductor
structure with stable performance.
[0036] In Step 1140 of FIG. 11 and referring to FIG. 5, a first
patterned photoresist layer 204 is formed on the protective layer
203. The first patterned photoresist layer 204 can expose a surface
portion of the protective layer 203 corresponding to the fuse
region 232 in the STI structure 201.
[0037] The first patterned photoresist layer 204 can be formed by
first spin-coating a photoresist material on the protective layer
203. The photoresist material can be a positive photoresist
material or a negative photoresist material. A photo mask (not
shown) can be used in an exposure process of the photoresist
material coated on the protective layer 203. Such photoresist
material can then be baked and hardened to form the first patterned
photoresist layer 204 to expose the surface portion of the
protective layer 203 in the fuse region 232.
[0038] In various embodiments, the region covered by the first
patterned photoresist layer 204 in FIG. 5 can be the same as the
region exposed by a second patterned photoresist layer (e.g., 206
in FIG. 8) that is subsequently-formed. In one embodiment, the
first patterned photoresist layer 204 and the second patterned
photoresist layer can use different types of photoresist materials,
e.g., one uses a positive photoresist material and the other uses a
negative photoresist material. In this case, a same photo mask may
be used in the exposure processes to respectively form the first
patterned photoresist layer 204 and the second patterned
photoresist layer. The region exposed by the first patterned
photoresist layer 204 can be the same as the region covered by the
second patterned photoresist layer. As a result, there is no need
to use a second photo mask for forming the second patterned
photoresist layer. The process flow can then be simplified, and the
manufacturing cost can be reduced.
[0039] Still in Step 1140 of FIG. 11 and referring to FIG. 6, the
first patterned photoresist layer 204 is used as an etch mask to
etch the protective layer 203 and the high-K dielectric layer 202
until the STI structure 201 is exposed.
[0040] Each of the protective layer 203 and the high-K dielectric
layer 202 can be etched by, for example, a dry etch and/or a wet
etch. For example, the dry etch can be an anisotropic dry etch, and
the wet etch can be an isotropic wet etch.
[0041] The first patterned photoresist layer 204 can expose a
surface portion of the protective layer 203 in the fuse region 232.
A portion of each of the protective layer 203 and the high-K
dielectric layer 202 can be removed from the fuse region 232 by the
etching process to expose a first surface portion of the STI
structure 201. The fuse layer can then be formed directly on the
exposed first surface portion of the STI structure 201 in the fuse
region 232. That is, the subsequently-formed fuse layer can be in
direct contact with the surface of the STI structure 201. In an
operation to blow open the fuse structure to be formed, no electric
leakage can be generated between the fuse layer and the STI
structure 201. Device performance of the fuse structure can be
stable.
[0042] In Step 1150 of FIG. 11 and referring to FIG. 7, the first
patterned photoresist layer 204 is removed from the structure shown
in FIG. 6 and a fuse layer 205 is formed on a remaining portion of
the protective layer 203 and on the STI structure 201 in the fuse
region 232.
[0043] The fuse layer 205 can be made of a material including, for
example, polycrystalline silicon, polycrystalline germanium, or any
other suitable materials. The formation process of the fuse layer
205 can include a chemical vapor deposition process or a physical
vapor deposition process. The fuse layer 205, formed on the
protective layer 203 and on the semiconductor substrate 200, can be
used to form the dummy gate layer in subsequent processes in a
region for forming the transistor, in addition to subsequently
forming the fuse structure.
[0044] The fuse layer 205 can have an electrical resistance such
that the electrical resistance can cause the subsequently-formed
fuse structure to generate heat in response to a certain voltage
applied to the formed fuse structure. The fuse structure can
include a blowing region having a width that is sufficiently narrow
for an easy blow-open. In one embodiment, the fuse layer 205 can
include polycrystalline silicon or polycrystalline germanium and
can be doped with p-type ions or n-type ions to increase electrical
resistance of the resultant fuse layer. The subsequently-formed
fuse structure can then be more stable. The p-type ions can
include, for example, boron ions and/or indium ions. The n-type
ions can include, for example, phosphor ions and/or arsenic ions.
Process for doping ions in the fuse layer 205 can include, for
example, an ion implantation process or an in-situ doping
process.
[0045] In Step 1160 of FIG. 11 and referring to FIG. 8, a second
patterned photoresist layer 206 is formed on the fuse layer 205.
The second patterned photoresist layer 206 can expose a surface
portion of the fuse layer 205 that is outside of the fuse region
232. The second patterned photoresist layer 206 can be formed using
a same process for forming the first patterned photoresist layer
204 (as shown in FIG. 5).
[0046] The photoresist materials used for the first patterned
photoresist layer 204 and the second patterned photoresist layer
206 can be different types and can respond to an exposure process
in an opposite or reversed manner. For example, when the first
patterned photoresist layer 204 uses a positive photoresist
material, the second patterned photoresist layer 206 can use a
negative photoresist material. Alternatively, when the first
patterned photoresist layer 204 uses a negative photoresist
material, the second patterned photoresist layer 206 can use a
positive photoresist material.
[0047] Additionally, a same photo mask can be used in the exposure
processes of the first patterned photoresist layer 204 and the
second patterned photoresist layer 206. In this case, one photo
mask is used sufficiently for fabricating the disclosed
semiconductor structure. This simplifies the manufacturing process
and saves the manufacturing cost.
[0048] As described above, the second patterned photoresist layer
206 can be formed over the STI structure 201 to cover the surface
portion corresponding to the fuse region 232, while the first
patterned photoresist layer 204 can expose the surface portion
corresponding to the fuse region 232. Therefore, patterns in the
first patterned photoresist layer 204 and the second patterned
photoresist layer 206 can be reversed or complementary. Positive
photoresist materials can be used for one of the first and second
patterned photoresist layers 204 and 206, while negative
photoresist materials can be used for the other of the first and
second patterned photoresist layers 204 and 206. The same photo
mask can be used to form the first and second patterned photoresist
layers 204 and 206.
[0049] In an exemplary embodiment, the transistor can be
simultaneously formed when forming the fuse structure. For example,
in addition to forming the second patterned photoresist layer 206
to cover the fuse region 232 of the STI structure 201, a third
patterned photoresist layer can be formed on a surface portion of
the fuser layer 205 over the semiconductor substrate 200 for
forming a dummy gate layer of a transistor. The formation process
of the third patterned photoresist layer can be the same as that
for the first patterned photoresist layer 204. After a subsequent
etching process, the fuse structure can be formed and the dummy
gate layer of the transistor can be formed at the same time.
[0050] Still in Step 1160 of FIG. 11 and referring to FIG. 9, the
second patterned photoresist layer 206 is used as an etch mask to
etch the structure depicted in FIG. 8 (e.g., including the fuse
layer 205, the protective layer 203, and the high-K dielectric
layer 202). The high-K dielectric layer 202 and the protective
layer 203, and portion(s) of the fuse layer 205 that are outside of
the fuse region 232 can be removed from the semiconductor substrate
200 to leave a remaining portion of the fuse layer 205a used as a
fuse structure formed on surface of the STI structure 201 in the
fuse region 232 and to expose the semiconductor substrate 200
including a second surface portion of the STI structure 201 outside
of the fuse region 232.
[0051] The fuse layer 205, the protective layer 203, and the high-K
dielectric layer 202 can be etched, e.g., by a dry etch or a wet
etch. In various embodiments, the dry etch can be an anisotropic
dry etch, and the wet etch can be an isotropic wet etch.
Optionally, after corresponding etching process(es) are completed,
the second patterned photoresist layer 206 and/or the third
patterned photoresist layer used for forming the transistor can be
removed.
[0052] The second patterned photoresist layer 206 can cover the
surface portion of the fuse layer 205 in the fuse region 232. After
the etching process, the fuse structure 205a can be formed on the
first surface portion of the STI structure 201 in fuse region 232
and can expose the second surface portion of the STI structure 201
outside of the fuse region 232. The material of the fuse structure
205a can be polycrystalline silicon, polycrystalline germanium, or
any other suitable materials. In one embodiment, the
polycrystalline silicon or polycrystalline germanium can be doped
with p-type ions or n-type ions to increase electrical resistance
of the fuse structure 205a and to improve stability of the fuse
structure 205a. In addition, the fuse structure 205a can be formed
directly on surface of the STI structure 201. Electric leakage can
be prevented between the fuse structure 205a and the STI structure
201. Device performance of the fuse structure 205a can be
improved.
[0053] In various embodiments, in addition to forming fuse
structures/devices on the semiconductor substrate 200, various
other semiconductor devices can be formed on the semiconductor
substrate 200. Exemplary semiconductor devices can include
transistors, formed by incorporating with the formation of the
disclosed fuse structures/devices. For example, a transistor may be
formed on the semiconductor substrate 200 in a region for forming
the transistor. Such region for forming the transistor can also
include the high-K dielectric layer 202 formed on the semiconductor
substrate 200 and the protective layer 203 formed on the high-K
dielectric layer 202, as similarly shown in FIG. 4.
[0054] FIG. 12 depicts an exemplary method for optionally forming a
transistor on a same semiconductor substrate (e.g., as shown in
FIG. 4) as for forming the disclosed fuse structure. The formation
of the transistor can be incorporated with the formation of the
fuse structure.
[0055] For example, a third patterned photoresist layer can be
formed on a portion of the fuse layer 205 in the region for forming
a transistor (e.g., in Step 1255 of FIG. 12). The third patterned
photoresist layer can be used as an etch mask to etch and remove a
corresponding portion of each layer on the semiconductor substrate
to form a dummy gate structure in the region for forming the
transistor (e.g., in Step 1260 of FIG. 12). This can be performed
while simultaneously removing the portion of each layer on the
semiconductor substrate 200 outside of the fuse region 232 to form
the fuse structure 205a. After the etching process, the dummy gate
structure can include a gate dielectric layer, a covering layer,
and a dummy gate layer formed on the semiconductor substrate 200.
The gate dielectric layer can be formed by etching the high-K
dielectric layer 202. The covering layer can be formed by etching
the protective layer 203. The dummy gate layer can be formed by
etching the fuse layer 205.
[0056] When the fuse structure 205a and the transistor are formed
simultaneously, manufacturing process steps can be reduced. After
the dummy gate structure is formed, an insulating (or dielectric)
layer can be formed on the semiconductor substrate 200 and on both
sides of the dummy gate structure (e.g., in Step 1262 of FIG. 12).
The dummy gate layer of the dummy gate structure can then be
removed to form an opening surrounded by the insulating layer and
the semiconductor substrate. The opening can be filled with a metal
to form a gate electrode layer (e.g., in Step 1264 of FIG. 12).
After the gate electrode layer is formed, the insulating layer can
be removed. Sidewall spacers can be formed on the sidewalls of the
gate electrode layer (or the gate structure) and on the surface of
the semiconductor substrate 200 (e.g., in Step 1266 of FIG. 12).
Source/drain regions can be formed in the semiconductor substrate
200 on both sides of the gate electrode layer or the sidewall
spacers (e.g., in Step 1268 of FIG. 12). The transistor including
the high-K gate dielectric layer and the metal gate electrode layer
can then be formed. The transistor can be, for example, a PMOS
transistor, an NMOS transistor, and/or a CMOS transistor.
[0057] FIG. 10 depicts top view of the exemplary fuse structure
shown in FIG. 9 in accordance with various disclosed embodiments.
As shown, an exemplary fuse structure can be the fuse structure
205a formed on the STI structure 201. The fuse structure 205a can
include a cathode 222a at one end and an anode 222b at another end
of the fuse structure 205a. Between the cathode and the anode, the
fuse structure 205a can include a blowing area 222c. The blowing
area 222c can include a width less than the cathode 222a (and/or
the anode 222b). The blowing area 222c having narrower width can be
easily opened when the fuse structure 205a is blown open.
[0058] In various embodiments, the cathode 222a and the anode 222b
can have different shapes for electrical connections. For example,
as shown in FIG. 10, the cathode 222a can have a rectangle shape
connecting to one end of the blowing area 222c, while the anode
222b can have a trapezoid shape connecting to the other end of the
blowing area 222c.
[0059] After formation of the fuse structure 205a is completed, a
plurality of conductive plugs can be formed on surface of each of
the cathode 222a and the anode 222b. The conductive plugs can be
made of a material including, e.g., copper, tungsten, aluminum, or
a combination thereof. The conductive plugs can be used to apply a
bias voltage to the cathode 222a and/or the anode 222b to blow-open
the fuse structure 205a.
[0060] In one certain embodiment, an exemplary semiconductor
structure can include removal of a high-k dielectric material and a
protective layer (e.g., a TiN layer) for providing a poly
electrical fuse (e-fuse) function in a 28 nm HK (i.e., high-k)
first gate-last process. A poly e-fuse device can be formed with
reliable performance and can be compatible with the HK first
gate-last process flow. During an exemplary process, the high-k
dielectric layer and the protective layer can be selectively
removed from the semiconductor substrate (e.g., a wafer), before a
fuse layer (e.g., an amorphous or polysilicon film) is deposited on
surface of the wafer. The fuse resistance can be maintained
sufficiently high and the e-fuse function can be more reliable
without having an additional conductive current path between the
fuse structure and the semiconductor substrate. For example, the
electrical resistance after programming can be determined solely by
a silicide (i.e., self-aligned silicide) poly film.
[0061] Note that the high-K dielectric layer and the protective
layer in the fuse region are removed before the fuse layer is
formed. The formed fuse layer can be in direct contact with the STI
structure. Leakage current can be prevented between the fuse
structure and the STI structure during the blowing process of the
fuse structure. Device performance of the formed fuse structure can
be maintained stable.
[0062] The fuse structure can be formed simultaneously when forming
the dummy gate structure of the transistor. Manufacturing process
steps can be simplified. On the other hand, the first patterned
photoresist layer can be made of a positive photoresist (or in
another case a negative photoresist), while the second patterned
photoresist layer can be made of a negative photoresist (or in
another case a positive photoresist). A same photo mask can be used
for the exposure processes for forming the first and second
patterned photoresist layers. Manufacturing cost can be saved.
[0063] The embodiments disclosed herein are exemplary only. Other
applications, advantages, alternations, modifications, or
equivalents to the disclosed embodiments are obvious to those
skilled in the art and are intended to be encompassed within the
scope of the present disclosure.
* * * * *