U.S. patent application number 14/715191 was filed with the patent office on 2015-11-12 for electrically bonded arrays of transfer printed active components.
The applicant listed for this patent is Semprius, Inc.. Invention is credited to Christopher Bower, Philip Garrou, Matthew Meitl, Etienne Menard.
Application Number | 20150327388 14/715191 |
Document ID | / |
Family ID | 44120924 |
Filed Date | 2015-11-12 |
United States Patent
Application |
20150327388 |
Kind Code |
A1 |
Menard; Etienne ; et
al. |
November 12, 2015 |
Electrically Bonded Arrays of Transfer Printed Active
Components
Abstract
An active component array includes a target substrate having one
or more contacts formed on a side of the target substrate, and one
or more printable active components distributed over the target
substrate. Each active component includes an active layer having a
top side and an opposing bottom side and one or more active
element(s) formed on or in the top side of the active layer. The
active element(s) are electrically connected to the contact(s), and
the bottom side is adhered to the target substrate. Related
fabrication methods are also discussed.
Inventors: |
Menard; Etienne; (Limoges,
FR) ; Bower; Christopher; (Raleigh, NC) ;
Meitl; Matthew; (Durham, NC) ; Garrou; Philip;
(Cary, NC) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Semprius, Inc. |
Durham |
NC |
US |
|
|
Family ID: |
44120924 |
Appl. No.: |
14/715191 |
Filed: |
May 18, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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13638040 |
Feb 25, 2013 |
9049797 |
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PCT/US2011/029365 |
Mar 22, 2011 |
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14715191 |
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61318522 |
Mar 29, 2010 |
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Current U.S.
Class: |
361/783 ;
156/277; 427/98.4 |
Current CPC
Class: |
H01L 24/27 20130101;
H01L 24/32 20130101; H01L 2224/73267 20130101; H01L 2924/15787
20130101; H01L 2224/24011 20130101; H01L 2224/83805 20130101; H01L
24/29 20130101; H01L 27/1214 20130101; H01L 2224/83868 20130101;
H01S 5/02236 20130101; H01L 2224/83874 20130101; H05K 3/10
20130101; H01L 24/02 20130101; H01L 24/08 20130101; H01L 2224/08238
20130101; H01L 2224/81192 20130101; H01L 2924/01005 20130101; H01L
2924/01013 20130101; H01L 2924/01033 20130101; H01L 2224/32227
20130101; H01L 24/82 20130101; H01L 2224/05548 20130101; H01L
2224/3012 20130101; H01L 2924/01006 20130101; H01L 2224/24137
20130101; H01L 24/30 20130101; H01L 2224/02371 20130101; H01L
2224/24998 20130101; H01L 2224/83191 20130101; H01L 2924/0105
20130101; H01L 2924/0132 20130101; H01L 2224/0239 20130101; H01L
2224/83121 20130101; H01L 2924/01047 20130101; H01L 2924/12042
20130101; H01L 24/05 20130101; H01L 2224/056 20130101; H01L
2224/245 20130101; H01L 24/73 20130101; H01L 2224/83859 20130101;
H01L 2224/82007 20130101; H01L 2224/83862 20130101; H01L 2224/29344
20130101; H01L 2224/92244 20130101; H01L 2924/01049 20130101; H01L
21/76898 20130101; H01L 2224/821 20130101; H01L 2224/82102
20130101; H01L 2224/83851 20130101; H01L 2924/01023 20130101; H01L
24/24 20130101; H01L 2224/83871 20130101; H01L 2224/2919 20130101;
H01L 2924/01057 20130101; H01L 2924/01082 20130101; H01L 2224/29101
20130101; H01L 2924/01029 20130101; H01L 2224/76155 20130101; H01L
2224/82106 20130101; H01L 2924/01075 20130101; H01L 24/92 20130101;
H01L 2924/14 20130101; H01L 31/0203 20130101; H01L 2224/29078
20130101; H01L 2224/83855 20130101; H01L 2924/01322 20130101; H01L
2924/15153 20130101; H01L 21/6835 20130101; H01L 2221/68381
20130101; H01L 2224/291 20130101; H01L 2224/83815 20130101; Y10T
29/49139 20150115; H01L 2224/04026 20130101; H01L 2224/24147
20130101; H01L 2224/32146 20130101; H05K 1/18 20130101; H01L
2221/68372 20130101; H01S 5/02276 20130101; Y10T 29/4913 20150115;
H01L 2224/24226 20130101; H01L 2224/80224 20130101; H01L 2224/83093
20130101; H01L 2224/8384 20130101; H01L 2924/01032 20130101; H01L
2924/014 20130101; H01L 2224/29111 20130101; H01L 2224/2929
20130101; H01L 2924/12041 20130101; H01L 2924/12044 20130101; H01L
2224/32104 20130101; H01L 27/14618 20130101; H01L 2224/83192
20130101; H01L 2224/02372 20130101; H01L 2924/01079 20130101; H01L
23/481 20130101; H01L 27/1266 20130101; H01L 2224/80203 20130101;
H01L 2221/6835 20130101; H05K 3/0058 20130101; H01L 24/83 20130101;
H01L 2224/2731 20130101; H01L 2224/92143 20130101; H01L 2924/0133
20130101; H01L 2924/10329 20130101; H01L 2224/291 20130101; H01L
2924/014 20130101; H01L 2224/29344 20130101; H01L 2924/00014
20130101; H01L 2224/29101 20130101; H01L 2924/014 20130101; H01L
2924/00 20130101; H01L 2924/0133 20130101; H01L 2924/01029
20130101; H01L 2924/01047 20130101; H01L 2924/0105 20130101; H01L
2924/0132 20130101; H01L 2924/0105 20130101; H01L 2924/01082
20130101; H01L 2224/13111 20130101; H01L 2924/01029 20130101; H01L
2924/01047 20130101; H01L 2924/00014 20130101; H01L 2224/13111
20130101; H01L 2924/01082 20130101; H01L 2924/00014 20130101; H01L
2224/2919 20130101; H01L 2924/00014 20130101; H01L 2924/12041
20130101; H01L 2924/00 20130101; H01L 2924/12042 20130101; H01L
2924/00 20130101; H01L 2924/14 20130101; H01L 2924/00 20130101 |
International
Class: |
H05K 7/06 20060101
H05K007/06; H05K 3/00 20060101 H05K003/00; H05K 3/10 20060101
H05K003/10 |
Claims
1.-20. (canceled)
21. An electronic component, comprising: an active layer; an
electrical connection in contact with the active layer; and a tab
comprising a broken portion of a tether, the tab extending from a
periphery of the electronic component.
22. The electronic component of claim 21, wherein the electronic
component is a light-emitting diode.
23. An electronic component array comprising a target substrate and
a plurality of electronic components of claim 21 thereon.
24. The electronic component array of claim 23, wherein the target
substrate is different from the active layer.
25. The electronic component array of claim 23, wherein the target
substrate has conductive traces thereon, and wherein each of the
conductive traces is electrically coupled to the electrical
connection of a corresponding electronic component.
26. The electronic component array of claim 23, wherein the target
substrate comprises at least one of a flexible substrate and a
polymer substrate.
27. The electronic component of claim 21, wherein the electrical
connection is electrically coupled to the active layer.
28. The electronic component of claim 21, comprising: a first metal
layer on a first side of the active layer; and a second metal layer
on a second side of the active layer, opposite the first side,
wherein the electrical connection is in electrical contact with the
second metal layer.
29. The electronic component of claim 28, comprising: a first
electrical interconnect at least in part on the second side of the
active layer and electrically connected to the first metal layer;
and a second electrical interconnect at least in part on the second
side of the active layer and electrically connected to the second
metal layer.
30. The electronic component of claim 29, comprising: an insulator
at least partially between the active layer and the first
electrical interconnect.
31. The electronic component of claim 29, wherein the electronic
component is on a target substrate with the second metal layer
therebetween.
32. The electronic component of claim 31, comprising: an adhesive
layer between the electrical connection and the target
substrate.
33. The electronic component of claim 32, wherein the adhesive
layer electrically connects the electrical connection to an
electrical contact on the target substrate.
34. The electronic component of claim 33, wherein the adhesive
layer comprises a conductive layer.
35. The electronic component of claim 33, wherein the adhesive
layer comprises a material configured to transition between a
nonconductive state and a conductive state responsive to curing
thereof.
36. The electronic component of claim 33, wherein the adhesive
layer comprises at least one of a eutectic layer, a conductive
film, and conductive nano-particles.
37. The electronic component of claim 21, wherein the active layer
comprises a crystalline, microcrystalline, polycrystalline, or
amorphous semiconductor layer.
Description
CLAIM OF PRIORITY
[0001] The present application is a continuation of U.S. patent
application Ser. No. 13/638,040, having a filing date of Feb. 25,
2013, which application is a 35 U.S.C. .sctn.371 national phase
application of PCT International Application No. PCT/US2011/029365,
entitled "Electrically Bonded Arrays Of Transfer Printed Active
Components", having an international filing date of Mar. 22, 2011,
which claims priority from U.S. Provisional Patent Application No.
61/318,522 entitled "Active Backplane," filed on Mar. 29, 2010 with
the United States Patent and Trademark Office, the disclosures of
which are incorporated by reference herein in their entireties.
FIELD OF THE INVENTION
[0002] The present invention is an apparatus and method for
providing a target substrate with electrically active components
distributed thereon.
BACKGROUND OF THE INVENTION
[0003] Large substrates with electronically active components
distributed over the extent of the substrate may be used in a
variety of electronic systems, for example imaging devices such as
flat-panel liquid crystal or OLED display devices and/or in digital
radiographic plates. Large substrates with electrically active
components are also found in flat-panel solar cells.
[0004] The electronically active components on flat-panel
substrates are typically formed by sputtering a layer of inorganic
semiconductor material or by spin-coating organic material over the
entire substrate and processing the layer to form electronic
components. However, such coatings typically have relatively poor
electronic characteristics. Inorganic semi-conductor materials can
be processed to improve their electronic characteristics, for
example amorphous silicon can be treated to form low-temperature or
high-temperature polycrystalline silicon. In other process methods,
microcrystalline semiconductor layers can be formed by used an
underlying seeding layer. These methods typically improve the
electron mobility of the semiconductor, but the performance of the
resulting layer may still be worse than is often desirable. The
substrate and layer of semiconductor material are typically
photo-lithographically processed to define electronically active
components, such as transistors. Such transistors are known as
thin-film transistors (TFTs) since they are formed in a thin layer
of semiconductor material, typically silicon. In these devices, the
substrate is often made of glass, for example Corning.RTM.
Eagle.RTM. or Jade.TM. glass designed for display applications.
Photo-lithographic methods used to form the active components are
known in the art.
[0005] These traditional techniques have some significant
limitations. Despite processing methods used to improve the
performance of thin-film transistors, such transistors have a
performance lower than the performance of traditional integrated
circuits formed in mono-crystalline semiconductor material.
Semiconductor material and active components can be desired only on
portions of the substrate, leading to wasted material and increased
material and processing costs. The substrate materials can be
limited by processing steps that may be necessary to process the
semiconductor material and the photo-lithographic steps that may be
used to pattern the active components. For example, plastic
substrates have a relatively limited chemical and heat tolerance
and do not typically survive photo-lithographic processing.
Furthermore, the manufacturing equipment needed to process large
substrates with thin-film circuitry is relatively expensive.
[0006] In an alternative manufacturing technique, a
mono-crystalline semiconductor wafer is employed as the substrate.
While this approach can provide substrates with similar performance
as integrated circuits, the size of such substrates is typically
limited, for example, to a 12-inch diameter circle, and the wafers
are relatively expensive compared to other substrate materials such
as glass or polymer.
[0007] In yet another approach, thin layers of semiconductor are
bonded to a substrate and then processed. Such a method is known as
semiconductor-on-glass or silicon-on-glass (SOG) and is described,
for example, in U.S. Patent Application Publication No.
2008/0224254, dated Sep. 18, 2004. If the semiconductor material is
crystalline, high-performance thin-film circuits can be obtained.
However, the bonding technique can be expensive, and the processing
equipment for the substrates to form the thin-film active
components on large substrates remains relatively expensive.
[0008] Also, it relatively large integrated circuits can be
provided in a surface mountable package that is directly adhered to
a substrate. However, these integrated circuits are relatively
large and additional layers may not be easily formed over the
integrated circuits.
[0009] Publication number 11-142878 of the Patent Abstracts of
Japan entitled "Formation of Display Transistor Array Panel"
describes etching a substrate to remove it from a thin-film
transistor array on which the TFT array was formed. TFT circuits
formed on a first substrate can be transferred to a second
substrate by adhering the first substrate and the TFTs to the
surface of the second substrate and then etching away the first
substrate, leaving the TFTs bonded to the second substrate. However
this method requires etching a significant quantity of material and
risks damaging the exposed TFT array.
[0010] An alternative method of locating material on a substrate is
described in U.S. Pat. No. 7,127,810. In this method, a first
substrate carries a thin-film object to be transferred to a second
substrate. An adhesive is applied to the object to be transferred
or to the second substrate in the desired location of the object.
The substrates are aligned and brought into contact. A laser beam
irradiates the object to abrade the transferring thin film so that
the transferring thin film adheres to the second substrate. The
first and second substrates are separated, peeling the film in the
abraded areas from the first substrate and transferring it to the
second substrate. In one embodiment, a plurality of objects is
selectively transferred by employing a plurality of laser beams to
abrade selected areas. Objects to be transferred can include
thin-film circuits.
[0011] U.S. Pat. No. 6,969,624 describes a method of transferring a
device from a first substrate onto a holding substrate by
selectively irradiating an interface with an energy beam. The
interface is located between a device for transfer and the first
substrate and includes a material that generates ablation upon
irradiation, thereby releasing the device from the substrate. For
example, a light-emitting device (LED) is made of a nitride
semiconductor on a sapphire substrate. The energy beam is directed
to the interface between the sapphire substrate and the LED nitride
semiconductor releasing the LED and allowing the LED to adhere to a
holding substrate coated with an adhesive. The adhesive is then
cured. These methods, however, require the patterned deposition of
adhesive on the object(s) or on the second substrate. Moreover, the
laser beam that irradiates the object is typically shaped to match
the shape of the object, and the laser abrasion can damage the
object to be transferred. Furthermore, the adhesive cure takes
time, which can reduce the throughput of the manufacturing
system.
[0012] In another method for transferring active components from
one substrate to another, described in "AMOLED Displays using
Transfer-Printed Integrated Circuits" published in the Proceedings
of the 2009 Society for Information Display International Symposium
Jun. 2-5, 2009, in San Antonio Tex., US, vol. 40, Book 2, ISSN
0009-0966X, paper 63.2 p. 947, small integrated circuits are formed
in a wafer and released from the wafer by etching beneath the
circuits. A PDMS stamp is pressed against the wafer and the
circuits adhered to the stamp. The circuits are then pressed
against a substrate coated with an adhesive, adhered to the
substrate, and the adhesive is subsequently cured. This method,
however, requires the construction of conductive metal traces over
both the integrated circuits and substrate. Because the integrated
circuits have a relatively large relief profile, for example 10
microns, forming such connections can be difficult. Furthermore,
forming the conductive metal traces after the integrated circuits
are adhered to the substrates typically subjects the integrated
circuits and substrate to photo-lithographic processing steps and
can require additional layers of material.
SUMMARY OF THE INVENTION
[0013] It should be appreciated that this Summary is provided to
introduce a selection of concepts in a simplified form, the
concepts being further described below in the Detailed Description.
This Summary is not intended to identify key features or essential
features of this disclosure, nor is it intended to limit the scope
of the disclosure.
[0014] According to some embodiments of the present invention, an
active component array includes a plurality of printable electronic
components, where each of the electronic components includes an
active layer having at least one active element on a first surface
thereof and a conductive element on a second surface thereof
opposite the first surface, and where the conductive element on the
second surface is configured to provide an electrical coupling to
the at least one active element on the first surface. The plurality
of electronic components is printed on a substrate different from
the active layer, where the substrate includes electrical contacts
on a surface thereof. The conductive element on the second surface
of each of the electronic components is in contact with a
respective one of the electrical contacts.
[0015] In some embodiments, each of the electronic components
includes a tab adjacent a periphery thereof, where the tab
comprises a broken portion of a tether configured to releasably
adhere the respective electronic component to an anchor portion of
the active layer on a source substrate. In some embodiments, the
substrate comprises a target substrate, and, in each of the
electronic components, the first surface is configured to be
adhered to a stamp to transfer the respective electronic component
from the source substrate to the target substrate.
[0016] In some embodiments, the array further includes an adhesive
layer between the second surface of each of the electronic
components and the surface of the substrate.
[0017] In some embodiments, the adhesive layer comprises a
conductive layer between the conductive element of each of the
electronic components and the respective one of the electrical
contacts.
[0018] In some embodiments, the adhesive layer comprises a material
configured to transition between a nonconductive state and a
conductive state responsive to curing thereof.
[0019] In some embodiments, the adhesive layer comprises a eutectic
layer, a conductive film, and/or conductive nano-particles.
[0020] In some embodiments, each of the electronic components
includes a via extending therethrough from the first surface to the
second surface, and the conductive element extends through the via
from the at least one active component on the first surface to the
second surface.
[0021] In some embodiments, in each of the electronic components,
the conductive element protrudes from the second surface.
[0022] In some embodiments, in each of the electronic components,
the conductive element extends from the at least one active
component on the first surface to the second surface around a
periphery of the active layer.
[0023] In some embodiments, in each of the electronic components,
the conductive element is a diode comprising a first doped layer
and a second doped layer having a conductivity type opposite that
of the first doped layer.
[0024] In some embodiments, the substrate comprises a target
substrate including conductive traces thereon, and ones of the
conductive traces are coupled to ones of the electrical
contacts.
[0025] In some embodiments, the substrate comprises a flexible
and/or a polymer substrate.
[0026] In some embodiments, the active layer comprises a
crystalline, microcrystalline, polycrystalline, or amorphous
semiconductor layer.
[0027] In some embodiments, the substrate including the plurality
of electronic components printed thereon defines a surface mount
package for a chip-level device.
[0028] According to further embodiments of the present invention, a
method of fabricating an active component array includes providing
a plurality of printable electronic components, where each of the
electronic components includes an active layer having at least one
active element on a first surface thereof and a conductive element
on a second surface thereof opposite the first surface, and where
the conductive element on the second surface is configured to
provide an electrical coupling to the at least one active element
on the first surface; and printing the plurality of electronic
components on a substrate different from the active layer and
including electrical contacts on a surface thereof such that the
conductive element on the second surface of each of the electronic
components is in contact with a respective one of the electrical
contacts.
[0029] In some embodiments, each of the electronic components
includes a tab adjacent a periphery thereof, where the tab
comprises a broken portion of a tether configured to releasably
adhere the respective electronic component to an anchor portion of
the active layer on a source substrate.
[0030] In some embodiments, the substrate comprises a target
substrate, and printing the plurality of electronic components on
the target substrate includes: providing the plurality of
electronic components releasably adhered to the source substrate by
respective tethers; pressing a stamp on the source substrate to
break the respective tethers and adhere the first surface of each
of the electronic components to the stamp; aligning the stamp
including the plurality of electronic components thereon with the
electrical contacts on the surface of the target substrate;
pressing the stamp on the target substrate such that the conductive
element on the second surface of each of the electronic components
contacts a respective one of the electrical contacts on the surface
of the target substrate; and separating the stamp from the target
substrate to print the plurality of electrical components
thereon.
[0031] In some embodiments, providing the plurality of electronic
components includes: providing the source substrate including a
sacrificial layer thereon and the active layer on the sacrificial
layer; processing the active layer to define the plurality of
electronic components respectively including the at least one
active element on the first surface thereof, respective trenches
extending around each of the electronic components, and the
respective tethers connecting each of the electronic components to
respective anchor portions of the active layer; and removing
portions of the sacrificial layer between the plurality of
electronic components and the source substrate such that the
plurality of electronic components are releasably adhered to the
source substrate by the respective tethers.
[0032] In some embodiments, pressing the stamp on the target
substrate is preceded by providing an adhesive layer between the
second surface of each of the electronic components and the surface
of the target substrate.
[0033] In some embodiments, the adhesive layer comprises a
conductive layer provided between the conductive element of each of
the electronic components and the respective one of the electrical
contacts on the target substrate.
[0034] In some embodiments, separating the stamp from the target
substrate is preceded by curing the adhesive layer to adhere the
plurality of electronic components to the target substrate, where
an adhesive strength of the adhesive layer is greater than that
used to adhere the first surface of each of the electronic
components to the stamp.
[0035] In some embodiments, the adhesive layer comprises a material
configured to transition between a nonconductive state and a
conductive state responsive to the curing thereof.
[0036] In some embodiments, curing comprises selectively
irradiating portions of the adhesive layer through the target
substrate, the stamp, and/or the electronic components using light,
heat, and/or electromagnetic energy.
[0037] In some embodiments, the adhesive layer comprises a eutectic
layer, an anisotropic conductive film, and/or conductive
nano-particles.
[0038] In some embodiments, the conductive nano-particles are
provided in a colloid, and the colloid is deposited on the surface
of the target substrate using an inkjet dispenser or
micro-dispenser to define the adhesive layer.
[0039] In some embodiments, each of the electrical contacts
includes a eutectic layer, and the eutectic layer is reflowed after
pressing the stamp on the target substrate such that the conductive
element on the second surface of each of the electronic components
is in contact with the respective one of the electrical
contacts
[0040] According to still further embodiments of the present
invention, an active component array comprises: a target substrate
having one or more contacts formed on a side of the target
substrate; and one or more active components distributed over the
target substrate, each active component including an active layer
having a top side and an opposing bottom side and one or more
active element(s) formed on or in the top side of the active layer,
wherein the active element(s) are electrically connected to the
contact(s), and wherein the bottom side is adhered to the target
substrate.
[0041] In some embodiments, the array further includes: a via
formed through the active layer and located over, and aligned with,
at least one contact; and a metal layer formed on at least a
portion of the via extending over at least a portion of the top
side of the active component, the metal layer being in electrical
communication with at least one active element and at least one
contact.
[0042] In some embodiments, the array further includes a metal
layer formed on at least a portion of the top side of the active
component, the side of the active component, and the bottom side of
the active component, the metal layer being in electrical
communication with at least one active element and with at least
one contact.
[0043] In some embodiments, the active layer includes a first doped
semiconductor layer formed on the bottom side of the active
component, a semiconductor layer formed between the first doped
semiconductor and the active element(s), and a second doped
semiconductor layer formed between the semiconductor and the active
element(s), where the second doped semiconductor layer is doped
with a charge opposite the doped charge of the first doped
semiconductor layer.
[0044] In some embodiments, the array further includes a patterned
layer formed over at least a portion of the active component and
over at least a portion of the target substrate, where the
patterned layer is in electrical communication with the active
element(s). In some embodiments, the patterned layer forms
conductive traces that are in electrical contact with an active
element.
[0045] In some embodiments, the array further includes an adhesive
formed over at least a portion of the active component and at least
a portion of the target substrate separate from the active
component.
[0046] In some embodiments, the array further includes an
electrically conductive material located between and in electrical
communication with the metal layer and a contact.
[0047] In some embodiments, the electrically conductive material
adheres the active component to the target substrate.
[0048] In some embodiments, the electrically conductive material is
a eutectic material.
[0049] In some embodiments, the electrically conductive material is
an unpatterned anisotropic conductive film.
[0050] In some embodiments, the active element(s) includes
electronic circuitry.
[0051] In some embodiments, the active layer is a crystalline
semiconductor.
[0052] According to yet further embodiments of the present
invention, a method of making an active component array comprises:
providing a target substrate having one or more contacts formed on
a side of the substrate; providing one or more active components,
each active component including an active layer having a top side
and an opposing bottom side and one or more active elements formed
on or in the top side of the active layer, the active substrate
having an electrical communication between one or more active
elements and a pad on the back side of the active; distributing the
one or more active components over the target substrate with the
pad located over, and aligned to, at least one contact; and
adhering the bottom side to the target substrate.
[0053] In some embodiments, the method further includes forming a
via from the top side to the bottom side through the active layer,
forming the pad with a metal layer over at least a portion of the
via in electrical contact with at least one active element.
[0054] In some embodiments, the active layer is formed of a
semiconductor material and the method further includes forming a
first doped semiconductor layer on the bottom side of the active
component, forming a semiconductor layer between the first doped
semiconductor and the active element(s), and forming a second doped
semiconductor layer between the semiconductor and the active
element(s), wherein the second doped semiconductor layer is doped
with a charge opposite the doped charge of the first doped
semiconductor layer.
[0055] In some embodiments, providing and distributing the one or
more active components over the target substrate further include
providing an active substrate having a sacrificial layer formed
over the active substrate and an active layer formed on the
sacrificial layer; processing the active substrate to form one or
more active components having active element(s) in or on the active
layer, an electrical connection in electrical communication with
one or more active element(s) and a pad located on the bottom side
of the active layer, and a trench around each of the active
component(s), the trench extending through the active layer to the
sacrificial layer, forming separated active components; removing
the sacrificial layer except for breakable tethers to release the
active components from a remainder of the active substrate;
pressing a stamp against the top side active component(s) to
thereby break the tethers and adhere the active components to the
stamp; and pressing the active components against the target
substrate in alignment with the contacts to adhere the active
components to the target substrate.
[0056] In some embodiments, the method further includes providing
an electrically conductive adhesive over the target substrate or
active components before the active components are pressed against
the target substrate.
[0057] In some embodiments, the electrically conductive adhesive is
cured to adhere the active component(s) to the target
substrate.
[0058] In some embodiments, the electrically conductive adhesive is
a eutectic material, an anisotropic conductive film, or a colloid
including metal nano-particles.
[0059] In some embodiments, the method further includes depositing
the colloid in a pattern with an inkjet dispenser or
micro-dispenser.
[0060] In some embodiments, the method further includes curing the
metal nano-particles with a laser to form an electrical
conductor.
[0061] In some embodiments, the cure is done by a laser through the
target substrate, through the active layer, a via in the active
layer, or though a stamp used to apply the active components to the
target substrate.
[0062] In some embodiments, at least one metal layer is welded to
at least one contact.
[0063] In some embodiments, at least one contact includes a
eutectic material or is coated with a eutectic material, and the
method further includes reflowing the eutectic material.
[0064] In some embodiments, the active components are active-matrix
pixel controllers, light-emitting diodes, photo-diodes, edge
lasers, or photovoltaic elements.
[0065] In some embodiments, the contacts include eutectic material
or have a eutectic material coating.
[0066] Embodiments of the present invention provide
high-performance active components over large substrates at a
reduced cost in materials and manufacturing equipment, with fewer
processing steps and material layers.
[0067] Other methods and/or devices according to some embodiments
will become apparent to one with skill in the art upon review of
the following drawings and detailed description. It is intended
that all such additional embodiments, in addition to any and all
combinations of the above embodiments, be included within this
description, be within the scope of the invention, and be protected
by the accompanying claims.
BRIEF DESCRIPTION OF THE DRAWINGS
[0068] FIG. 1A is a cross section illustrating an embodiment of the
present invention having a via;
[0069] FIG. 1B is a cross section illustrating an embodiment of the
present invention having doped semiconductor layers;
[0070] FIG. 1C is a cross section illustrating an embodiment of the
present invention having a metal conductor;
[0071] FIG. 2 is a perspective of the device elements illustrated
in the cross section of FIG. 1A;
[0072] FIG. 3 is a cross section illustrating the use of an
insulating layer on a semiconductor according to an embodiment of
the present invention;
[0073] FIGS. 4A and 4B are cross sections including a patterned
layer illustrating another embodiment of the present invention;
[0074] FIG. 5 is a top view illustrating the structure of FIGS. 4A
and 4B;
[0075] FIG. 6A is a cross section including a patterned
electrically conductive material according to an embodiment of the
present invention;
[0076] FIG. 6B is a cross section including an unpatterned
electrically conductive material according to another embodiment of
the present invention;
[0077] FIG. 6C is a cross section including patterned sintered
nano-particles according to another embodiment of the present
invention;
[0078] FIG. 6D is a cross section illustrating the exposure of an
unpatterned electrically conductive material through a mask
according to an embodiment of the present invention;
[0079] FIG. 6E is a cross section illustrating the patterned
exposure of an unpatterned electrically conductive material
according to an embodiment of the present invention;
[0080] FIG. 6F is a cross section that illustrates an embodiment of
the present invention including a eutectic material before
reflowing;
[0081] FIG. 6G is a cross section that illustrates an embodiment of
the present invention including a eutectic material after
reflowing;
[0082] FIG. 7 is a flow diagram illustrating an embodiment of the
method of the present invention;
[0083] FIGS. 8A-8E are flow diagrams illustrating portions of
various methods of the present invention;
[0084] FIG. 9 is a flow diagram illustrating an alternative
embodiment of the method of the present invention;
[0085] FIG. 10 is a flow diagram illustrating the use of an
electrically conductive adhesive in an alternative embodiment of
the method of the present invention;
[0086] FIGS. 11A-11G are cross sections of the elements of active
components at different stages of construction according to an
embodiment of the method of the present invention;
[0087] FIG. 12 is a top view illustrating the structure of FIG.
11G;
[0088] FIGS. 13A-13C are cross sections of the metal layer in a via
at different stages of construction according to an embodiment of
the method of the present invention;
[0089] FIG. 14 is a cross section illustrating doped semiconductor
layers according to an embodiment of the present invention;
[0090] FIG. 15 is a flow diagram illustrating an experimental
method according to an alternative embodiment of the method of the
present invention;
[0091] FIG. 16 is a cross section illustrating an experimental
device made according to an embodiment of the present
invention;
[0092] FIG. 17 is a photograph of an experimental device made
according to an embodiment of the present invention; and
[0093] FIG. 18 is a photograph of the experimental device of FIG.
17 emitting light.
[0094] The figures are not drawn to scale since the individual
elements of the drawings have too great a size variation to permit
depiction to scale.
DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION
[0095] The present invention now will be described more fully
hereinafter with reference to the accompanying drawings, in which
embodiments of the invention are shown. However, this invention
should not be construed as limited to the embodiments set forth
herein. Rather, these embodiments are provided so that this
disclosure will be thorough and complete, and will fully convey the
scope of the invention to those skilled in the art. In the
drawings, the thickness of layers and regions are exaggerated for
clarity. Like numbers refer to like elements throughout.
[0096] It will be understood that when an element such as a layer,
region or substrate is referred to as being "on" or extending
"onto" another element, it can be directly on or extend directly
onto the other element or intervening elements may also be present.
In contrast, when an element is referred to as being "directly on"
or extending "directly onto" another element, there are no
intervening elements present. It will also be understood that when
an element is referred to as being "in contact with" or "connected
to" or "coupled to" another element, it can be directly contacting
or connected to or coupled to the other element or intervening
elements may be present. In contrast, when an element is referred
to as being "in direct contact with" or "directly connected to" or
"directly coupled to" another element, there are no intervening
elements present.
[0097] It will also be understood that, although the terms first,
second, etc. may be used herein to describe various elements, these
elements should not be limited by these terms. These terms are only
used to distinguish one element from another. For example, a first
element could be termed a second element, and, similarly, a second
element could be termed a first element, without departing from the
scope of the present invention.
[0098] Furthermore, relative terms, such as "lower" or "bottom" and
"upper" or "top," may be used herein to describe one element's
relationship to another element as illustrated in the Figures. It
will be understood that relative terms are intended to encompass
different orientations of the device in addition to the orientation
depicted in the Figures. For example, if the device in one of the
figures is turned over, elements described as being on the "lower"
side of other elements would then be oriented on "upper" sides of
the other elements. The exemplary term "lower", can therefore,
encompasses both an orientation of "lower" and "upper," depending
of the particular orientation of the figure. Similarly, if the
device in one of the figures is turned over, elements described as
"below" or "beneath" other elements would then be oriented "above"
the other elements. The exemplary terms "below" or "beneath" can,
therefore, encompass both an orientation of above and below.
[0099] The terminology used in the description of the invention
herein is for the purpose of describing particular embodiments only
and is not intended to be limiting of the invention. As used in the
description of the invention and the appended claims, the singular
forms "a", "an" and "the" are intended to include the plural forms
as well, unless the context clearly indicates otherwise. It will
also be understood that the term "and/or" as used herein refers to
and encompasses any and all possible combinations of one or more of
the associated listed items. It will be further understood that the
terms "comprises" and/or "comprising," when used in this
specification, specify the presence of stated features, integers,
steps, operations, elements, and/or components, but do not preclude
the presence or addition of one or more other features, integers,
steps, operations, elements, components, and/or groups thereof.
[0100] Embodiments of the invention are described herein with
reference to cross-section illustrations that are schematic
illustrations of idealized embodiments (and intermediate
structures) of the invention. As such, variations from the shapes
of the illustrations as a result, for example, of manufacturing
techniques and/or tolerances, are to be expected. Thus, embodiments
of the invention should not be construed as limited to the
particular shapes of regions illustrated herein but are to include
deviations in shapes that result, for example, from manufacturing.
In other words, the regions illustrated in the figures are
schematic in nature and their shapes are not intended to illustrate
the actual shape of a region of a device and are not intended to
limit the scope of the invention.
[0101] Unless otherwise defined, all terms used in disclosing
embodiments of the invention, including technical and scientific
terms, have the same meaning as commonly understood by one of
ordinary skill in the art to which this invention belongs, and are
not necessarily limited to the specific definitions known at the
time of the present invention being described. Accordingly, these
terms can include equivalent terms that are created after such
time. It will be further understood that terms, such as those
defined in commonly used dictionaries, should be interpreted as
having a meaning that is consistent with their meaning in the
present specification and in the context of the relevant art and
will not be interpreted in an idealized or overly formal sense
unless expressly so defined herein. All publications, patent
applications, patents, and other references mentioned herein are
incorporated by reference in their entireties.
[0102] Referring to FIGS. 1A-1C and to FIG. 7, an active component
array comprises a target substrate 10 having one or more contact
pads or contacts 12 formed on a side of the target substrate 10 and
provided in step 100. One or more active components 20 are provided
in step 105 and distributed over the target substrate 10 in step
110, each active component 20 including an active layer 24 having a
top side 70 and an opposing bottom side 72 and one or more active
element(s) 22 formed on or in the top side 70 of the active layer
24. The active element(s) 22 are electrically connected to the
contact(s) 12, and the bottom side 72 is adhered to the target
substrate 10 in step 115.
[0103] As used herein, an active component array (also referred to
herein as an active component) is any substrate having active
components located thereon. The active components can include
electronic circuits, computing circuits, or optical elements that
either emit or absorb light. The circuits can be either analog or
digital, and can include transistors, capacitors, resistors, or
other electronic elements. The active component array can include
heterogeneous components distributed over the target, either
regularly or irregularly. Substrates can be glass, polymer, metal,
or semiconductor, for example silicon, GaAs, or other III-V
materials.
[0104] Referring to FIG. 1A, in one embodiment of the active
component array of the present invention, one or more via(s) 30 are
formed through the active layer 24 and are located over, and
aligned with, at least one contact 12. The bottom side 72 is
adhered to the target substrate 10. The active elements 22 can
include electronic circuitry, for example transistors 23. A metal
layer 32 is formed on at least a portion of the via 30 extending
over at least a portion of the top side 70 of the active component
20, the metal layer 32 being in electrical contact with at least
one active element 22 and at least one contact 12. In this way, the
active elements 22 can electrically communicate through the metal
layer 32 in the via 30 through the contact 12 to interact with
other elements located on, or electrically connected to, the target
substrate 10, for example external controllers (not shown)
controlling the distributed active components 20.
[0105] Referring to FIG. 2, a perspective view of an active
component 20 with active elements 22 and a via 30 passing through
the active component 20 from the top side of the active layer 24 to
the bottom side is shown in alignment with a contact 12 formed on a
target substrate 10.
[0106] Referring to FIG. 3, an insulating layer 25, for example an
oxide layer or dielectric layer, can be used to insulate any metal
layers (e.g. 32) from the underlying active layer 24. Because, in
some embodiments of the present invention, the active layer 24 is a
semiconductor (e.g. crystalline silicon), it is helpful to insulate
the semiconductor from current-carrying wires to reduce and/or
present undesirable electrical responses in the materials. This
insulating layer 25 is not shown in the remaining figures (except
FIG. 16), but is understood to be useful in any embodiments that
use a metal current carrying wires. In another embodiment of the
present invention, the layer 25 can comprise a semiconductor layer
doped with a charge opposite the doped charge of the underlying
active layer 24 to provide at least a partial electrical insulation
when a negative voltage bias is maintained between the p and n
doped semiconductor layers.
[0107] Referring back to FIG. 1B and to FIG. 14, in another
embodiment of the active component array of the present invention,
the active layer 24 further comprises a first doped semiconductor
layer 90 formed on the bottom side 72 of the active component 20, a
semiconductor layer 92 formed between the first doped semiconductor
90 and the top side 70, and a second doped semiconductor layer 94
formed between the semiconductor 92 and the top side 70, wherein
the second doped semiconductor layer 94 is doped with a charge
opposite the doped charge of the first doped semiconductor layer
90. The semiconductor layers 90, 92, 94 are in contact. For
example, the semiconductor layer 92 can be crystalline silicon, the
first doped semiconductor layer 90 can be crystalline silicon with
a p++ doping and the second semiconductor layer 94 can be
crystalline silicon with an n++ doping. This stacked structure can
be formed using, for example, well-established implantation,
epitaxial growth, or wafer-bonding processes, or a combination of
such processes, known in the art. The three layers then form a
diode 27 through which current can pass from an active element 22
on the top side 70 of the active layer 24 to the bottom side 72 and
thence to the contact 12. In an alternate embodiment of the present
invention, the semiconductor layers 90, 94, can be doped in reverse
to promote current flow in the other direction. The flow of current
to and from the active elements 22 and the contacts 12 are
facilitated by interconnections 29 within the active layer 24 that
can be used as electrical connections between the active elements
22 and between the active elements 22 and the contacts 12. Means
for constructing active elements in a crystalline semiconductor,
electrical connections (e.g. metal wire layers), and doping
crystalline layers are known in the integrated circuit
photolithographic art.
[0108] In yet another embodiment of the present invention
illustrated in FIG. 1C, a metal layer 32 is formed on at least a
portion of the top side 70 of the active component 20, the side of
the active component 20, and the bottom side 72 of the active
component 20, the metal layer 32 being in electrical communication
with at least one active element 22 and with at least one contact
12.
[0109] As described herein, the active elements formed on or in the
top side of the active layer are, on average, closer to the top
side than the bottom side. The active elements can extend into the
active layer close to the bottom side of the active layer. The
active layer can be a semiconductor layer, for example a
crystalline semiconductor such as crystalline silicon. Portions of
the active elements can be formed on top of the active layer and
can be formed in layers within the active layer, for example by
using photolithographic processes known in the integrated circuit
art. In general, as described herein, the top side of the active
layer is the process side of the active layer 24 for
photo-lithographic processes. Note, however, that layers (e.g.
metal layers or wires) can be formed on the bottom side of the
active layer over other layers as are described below. The active
layer 24 is then deposited and formed over the metal layers or
wires.
[0110] In various embodiments of the present invention, the active
component array of the present invention can be used, for example,
to form an active-matrix where the active components are organized
into an array controlling a corresponding array of elements, for
example pixels in a display or a digital radiographic plate. In
another example, the active components can be light-emitters, for
example light-emitting diodes or LEDs, or a vertical cavity
side-emission laser (e.g. edge laser). In yet another example, the
active components can serve to convert incident light into
electricity, forming a photovoltaic device, for example with
photo-diodes. In cases where it is desirable to collect or emit
light efficiently, the contacts or any metal layers formed beneath
the active layer can reflect incident light that passes through the
active component back through the active component. In the case in
which an active component serves to convert light to electrical
current, this reflection provides an improved absorption of light
by the active component. In the case in which the active component
emits light, or controls the emission of light by other layers, the
reflection provides improved emission of light.
[0111] Referring further to FIGS. 4A and 4B, a patterned layer 42
can be formed over an adhesive layer 40, for example an adhesive
resin that can cover a portion of the active component 20. The
patterned layer 42 can also extend over at least a portion of the
active component 20 and over at least a portion of the target
substrate 10 separate from the active component 20, and can be in
electrical communication with the active element 22, providing an
alternative means of electrically communicating with the active
elements 22. The adhesive layer 40 can cover only a relatively
small portion of the target substrate 10 so that the patterned
layer 42 is formed largely on the target substrate 10 (as shown in
FIG. 4A) or the adhesive layer 40 can extend over much of the
target substrate 10 so that the patterned layer 42 is formed
largely on the adhesive layer 40 (as shown in FIG. 4B). The
patterned layer 42 can be in electrical contact with the metal
layer 32 or contact 12 (not shown). In some embodiments of the
present invention, the patterned layer 42 forms conductive traces
that are in electrical contact with an active element 22. The
conductive traces can be metal lines formed using photolithographic
methods, and can communicate electrical signals to and from the
active elements 22. FIG. 5 is a top view of a target substrate 10
having an array of active components 20 electrically connected with
conductive traces. Conductive trace 42A is electrically connected
to contacts 12 and then to active elements (not shown) while
conductive trace 42B is electrically connected over the top side of
the active components 20 to active elements (not shown).
[0112] In one embodiment of the present invention, a metal layer 32
(for example as illustrated in FIGS. 1A, 1B, and 1C) can be in
direct electrical connection with a contact 12. If appropriate
materials (e.g. a metal such as gold) are employed for the metal
layer and the contact, the metals can weld when placed in direct
contact, especially when placed in direct contact under pressure or
heat. The welding effect can be enhanced with the application of
heat or radiation, for example by using a laser to irradiate the
contact 12. Thus a strong electrical and mechanical bond can be
formed between the contact 12 and a metal layer 32 on the bottom
side of the active layer 24.
[0113] According to an alternative embodiment of the present
invention, electrical communication between an active element and
the contact on the target substrate can be enhanced by improving
the electrical connection between the metal layers and the contacts
by providing an electrically conductive material between each metal
layer and contact. Referring to FIG. 6A, an active component 20 has
an active layer 24 with a via 30 formed through the active layer 24
coated with a metal layer 32. The metal layer 32 is formed over the
via and a portion of the metal layer 32 electrically connects to an
active element 22. The metal layers 32 and via 30 are aligned with
the contacts 12. Referring also to FIG. 10, an electrically
conductive material 50 is located in step 143 between the metal
layer 32 and the contact 12. The electrically conductive material
50 can be an adhesive for example, coated on the target substrate
10 or on the active components 20. The active components 20 are
then pressed in alignment with the contacts 12 against the target
substrate in step 145. The active components 20 are adhered to the
target substrate 10 with the electrically conductive adhesive
material 50 in step 150 and the material 50 is cured in step 160,
forming an electrical connection between the metal layer 32 and the
contact 12. The electrically conductive adhesive material 50 can
permanently adhere the active component 20 to the target substrate
10 after the electrically conductive adhesive material 50 is cured.
The electrically conductive adhesive material 50 can be a curable
material that is not electrically conductive when applied to the
target substrate 10 or the metal layers 32 but is subsequently
cured and thereby becomes electrically conductive. The electrically
conductive material 50 can be a eutectic material, for example a
solder.
[0114] Alternatively, as illustrated in FIG. 6B, the electrically
conductive material 50 can be an anisotropic conductive film. In
another embodiment (FIG. 6C), the electrically conductive material
50 comprises sintered metal nano-particles. In some embodiments,
the electrically conductive material 50 can be patterned and
located, for example only on the contacts or metal layers (as shown
in FIG. 6A). Such an arrangement can be useful, for example with
solders or conductive inks, to prevent electrical shorts between
separate contacts. In other embodiments, shown in FIG. 6B, the
electrically conductive material 50 is unpatterned and located, for
example everywhere under an active component. By unpatterned is
meant that the electrically conductive material 50 is not patterned
in the area between the active component 20 and the target
substrate 10. Such an arrangement can be used, for example with
anisotropic conductive films that, when cured (e.g. by pressure),
may prevent electrical shorts between separate contacts by only
conducting electrical current through the film between the contacts
12 and the metal layer 32.
[0115] Alternatively, as illustrated in FIG. 6F, the active
components 20 are adhered to the target substrate 10 using a
patterned adhesive layer 40. The patterned electrically conductive
contact can be a eutectic material 51 or have a eutectic material
coating (e.g. contact 12, not shown separately from the eutectic
material 51), for example solder, with a thickness less than or
equal to the thickness of the patterned adhesive layer 40. Thermal
and electrical contacts between the eutectic material 51 and the
metal layers 32 can be established by reflowing the eutectic
material 51 as illustrated in FIG. 6G. Referring to FIG. 6G, the
eutectic material 51 has been reflowed to form a curved surface
that contacts the metal layers 32 to establish electrical
communication with the metal layer 32. Reflow soldering is a
process known in the prior art in which a solder paste (a sticky
mixture of powdered solder and flux) is used to temporarily attach
one or several electrical components to their contact pads, after
which the entire assembly is subjected to controlled heat, which
melts the solder, permanently connecting the joint. In a further
embodiment of the present invention, a eutectic layer can be
incorporated on the metal layer 32 to establish electrical
communication between the metal layer 32 and an underlying
contact.
[0116] A variety of means can be employed to cure the electrically
conductive material 50. For example, referring to FIG. 6D, a source
of electromagnetic radiation can emit unpatterned electromagnetic
radiation 80 (for example light, ultraviolet radiation, or infrared
radiation) through a mask 82 that patterns the exposure of
electromagnetic radiation onto the target substrate 10. Referring
to FIG. 6E, in an alternative method, a light source 84 that
exposes a limited area, for example a laser, can directly expose a
desired area, such as the contact to heat the limited area or
expose it to radiation that cures the electrically conductive
material 50 without the need for a mask. Additional,
light-absorbing materials can be integrated into the contacts 12 or
electrically conductive material 50 to increase the amount of heat
or radiation absorbed. Electromagnetic radiation can also be
directed through the via 30 and metal layer 32 to heat or expose
the electrically conductive material 50.
[0117] The electrically conductive material can comprise a variety
of materials. In particular, eutectic materials combining multiple
different metals can be used, for example mixtures of tin and lead,
mixtures of indium, gold, and copper, mixtures of gallium and
indium, or mixtures of tin, silver, and copper. The electrically
conductive materials can be patterned through screen printing or
other patterning methods including photo-lithographic methods or
micro-dispensing methods. In one embodiment of the present
invention, nano-metals, for example nano-meter-sized metal
particles of, for example, noble metals, silver, or gold, can be
dispensed in a liquid carrier through, for example, an inkjet or
other micro-dispensing patterned-application device. These
materials can be cured by heat, supplied, for example by baking or
through the patterned application of energy, for example a laser
through the target substrate or through the active component to
form an electrically conductive sintered particulate conductor. In
another embodiment of the present invention, an oxide layer can be
formed on a metal contact. Once the metal layer is aligned and
adjacent to the metal contact, the patterned application of energy
to the metal contact can drive metal through the oxide layer to
form an electrical connection between the metal layer and the metal
contact. As noted above, the metal layer and the contact can be
welded.
[0118] The steps of forming the various elements of the present
invention can be performed in different orders, depending on the
needs of the manufacturing process and various embodiments of the
present invention. Referring to FIG. 8A, the step 105 of providing
the active components can further include the steps of providing an
active substrate in step 106, forming active elements 22 on the
active substrate 28, for example by employing photolithographic
processes known in the art, in step 107. A via through the active
substrate is formed in step 108 to complete the active
component.
[0119] In an alternative embodiment of the present invention,
referring to FIG. 8B, the via can be formed before the active
elements. For example, step 105 of providing the active components
can further include the steps of providing an active substrate in
step 106, forming a via through the active substrate in step 108,
and forming active elements on the active substrate, for example by
employing known photolithographic processes in step 107.
[0120] In yet another alternative embodiment of the present
invention, referring to FIG. 8C, the via can be formed after the
active components are distributed over the target substrate. For
example, an active substrate can be provided in step 106, the
active elements formed in step 107, the active components
distributed over the target substrate in step 110, and a via formed
through the active substrate in step 108.
[0121] In yet another method of the present invention illustrated
in FIG. 8D, the step 106 of providing an active substrate further
comprises the optional step of depositing a metal layer as a
conductive pad in optional step 170 followed by the step of forming
a first doped semiconductor layer on the bottom side of the active
component in step 175. In step 180, a semiconductor layer is formed
followed by forming a second doped semiconductor layer in step 185,
wherein the second doped semiconductor layer is doped with a charge
opposite the doped charge of the first doped semiconductor layer.
The remainder of the active layer and the active elements can be
formed over the second doped semiconductor layer and can include
metal interconnects, doped elements, and the like to form an
integrated circuit, using known methods.
[0122] In another method of the present invention, illustrated in
FIG. 8E, a metal pad is formed in step 170, followed by the
formation of the active layer and active elements in the active
layer. Metal traces are then formed in step 190 to electrically
connect the active elements to the metal pad. This can be done
after the location of the active components over the contacts so
that the contacts are located in alignment and in electrical
communication with the metal pad.
[0123] Referring to FIG. 9 and to FIGS. 11A-11G, a printing process
using a stamp to transfer active components from a wafer to a
target substrate can be employed in some embodiments of the present
invention. Referring to FIGS. 9 and 11A, an active substrate 28 is
provided in step 106 and a sacrificial layer 26 formed on the
active substrate in step 120. An active layer 24 is then formed on
the sacrificial layer 26 in step 125. The active substrate 28 can
be a semiconductor, for example crystalline silicon, the
sacrificial layer 26 can include an oxide layer, and the active
layer 24 can be a semiconductor, for example crystalline silicon.
These materials and layers can be deposited and processed using
known photolithographic methods.
[0124] After the sacrificial layer and the active layer are
deposited on the active substrate, the active substrate can be
processed to form active components in or on the active layer, for
example using silicon foundry fabrication processes. Additional
layers of material can be added as well as other materials such as
metals, oxides, nitrides and other materials known in the
integrated-circuit art. Each active component can be a complete
semiconductor integrated circuit and includes, for example,
transistors. The active components can have different sizes, for
example, 1000 square microns or 10,000 square microns, 100,000
square microns, or 1 square mm, or larger, and can have variable
aspect ratios, for example 2:1, 5:1, or 10:1. The active components
can have a thickness of 5-20 microns, 20-50 microns, or 50-100
microns. Substrates of this size cannot typically be handled using
traditional techniques, for example surface mounting
techniques.
[0125] Referring to FIG. 11B, active components 20 are formed on or
in the top side of the active layer in step 107, for example, using
traditional methods to manufacture integrated circuits and known in
the photolithographic arts. Active elements 22 (FIG. 11C) can be
formed in the active components 20. The active elements can be
electronic circuits. As shown in FIG. 11D, a via 30 is formed
through the active component 20 and active layer 24 in step 108.
Once the vias 30 are formed and coated with a metal layer 32, a
trench 60 is formed around the active components 20 (FIG. 11E) in
step 130, except for breakable tethers 62 connecting the active
components 20 to an anchor area 66 (shown in the top view of FIG.
12) of the active layer 24. The trenches structurally isolate the
active components from each other and the remainder of the active
layer. The trench extends through the active layer to the
sacrificial layer. The trenches can be formed before the active
components are processed, or can be formed as a part of the active
component formation process.
[0126] In an alternative embodiment, the vias can be formed in the
same step as the trenches and the metal layers coated subsequently.
The sacrificial layer 26 except for the tethers 62 is removed in
step 135, so that the active components 20 are released from the
active substrate 28, except for the connecting tethers 62 to the
anchor area 66 of the active layer 24 (FIG. 11G).
[0127] In another embodiment of the present invention, the vias can
be completely filled with metal to provide additional conductivity
and mechanical and environmental robustness. Alternatively, using
the structure of FIG. 1B, step 125 of forming the active layer can
include the steps of forming a sacrificial layer 26 on an active
substrate 28, and then sequentially forming the doped and undoped
semiconductor layers of FIG. 14, using semiconductor processing
methods known in the art. If a metal layer is desired on the bottom
of the active layer, it can first be formed over the sacrificial
layer, for example, using semiconductor processing methods known in
the art, and the subsequent active layers formed over the metal and
sacrificial layers.
[0128] The sacrificial layer is 26 then removed, for example by
etching with hydrofluoric acid to release the active components 20
from the active substrate 28. The active components 20 are
completely detached from the active substrate 28, except for
tethers 62 connecting the active components 20 to an anchor area 66
of the active layer 24 that remains attached to the active
substrate 28 and sacrificial layer 26. The relative width of the
space between the active components in the active layer and the
relative size and aspect ratio of the active components are chosen
together with the etch rate and conditions to properly separate the
active components from the source substrate without removing the
anchor areas. The tethers can be protected from the etch step by
coating the tethers with an etch-resistant material or forming the
tethers from different, etch-resistant materials (using
photo-lithographic processes).
[0129] When employed within a via, the metal layer 32 can be formed
to protrude or extend slightly beneath the lower surface of the
active layer 24 as illustrated in FIGS. 13A-13C. Referring to FIG.
13A, an active component 20 formed over a sacrificial layer 26 and
active substrate 28 has a via 30 located between two active
elements 22. The etching process for the via 30 can undercut the
sacrificial layer 26 at the sides of the via 30 and beneath the via
30. Referring to FIG. 13B, the metal layer 32 deposited in the via
30 then extends down to the remaining sacrificial layer 26 material
below the active layer 24. The subsequent removal of the
sacrificial layer 26, shown in FIG. 13C, leaves the metal layer
extending slightly beneath the active layer 24. By extending the
metal layer 32 beneath the active layer 24, the metal layer 32 has
improved electrical communication with the contacts formed on the
target substrate.
[0130] Referring back to FIG. 9, a stamp, for example made of PDMS
and having protrusions matched to the location, size, and shape of
each active component is provided and then pressed in alignment
against the top side of the released active components to break the
tethers and adhere the active components to the stamp protrusions
in step 140. As such, some or all of the active components include
at least one tab, where each tab includes a broken portion of the
tether used to connect the active component to the anchor area of
the active layer. The active components are then aligned with the
target substrate and adhered to the target substrate by pressing
the stamp including the active components against the target
substrate in step 145. A curable electrically conductive adhesive
can be located between the target substrate contacts and the metal
layers in the vias of the active components to assist in adhering
the active components to the target substrate. The curable
electrically conductive adhesive can then be cured in step 150 to
adhere the active components to the target substrate.
[0131] One method of curing the electrically conductive adhesive is
to expose the adhesive in the desired locations between the metal
layer and the contacts to patterned electromagnetic light provided,
for example, by a laser (as shown in FIG. 6E). In one embodiment,
the laser light is directed through the target substrate, in
another embodiment the light is directed through the via and active
layer. In a further embodiment, the laser light can be directed
through the stamp.
[0132] In various embodiments of the present invention, the via can
be formed before the one or more active components are distributed
over the target substrate or after the one or more active
components are distributed over the target substrate.
[0133] Some embodiments of the present invention provide a
high-performance active substrate with a reduced number of layers
and process steps and provides more robust electrical
interconnections. In some embodiments of the present invention, the
active components are small integrated circuits formed in a
semiconductor wafer substrate, for example gallium arsenide or
silicon, which can have a crystalline structure. Processing
technologies for these materials typically employ high heat and
reactive chemicals. However, by employing transfer technologies
that do not stress the active component or substrate materials,
more benign environmental conditions can be used compared to
thin-film transistor manufacturing processes. Thus, the present
invention has an advantage in that flexible substrates (e.g.
polymer substrates) that are less tolerant of extreme processing
conditions (e.g. heat, chemical, or mechanical processes) can be
employed either for the active substrate or target substrate or
both. Furthermore, it has been demonstrated that crystalline
silicon substrates have strong mechanical properties and, in small
sizes, can be relatively flexible and tolerant of mechanical
stress, particularly for substrates of 5 micron, 10 micron, 20
micron, 50 micron, or even 100-micron thicknesses. Alternatively,
the active layer can be a microcrystalline, polycrystalline, or
amorphous semiconductor layer.
[0134] Once all of the active components to be used in a process
are transferred, the active substrate can be stripped of the
remaining active layer and sacrificial layer materials and cleaned.
A second sacrificial layer can be formed over the active substrate
and a second active layer formed over the second sacrificial layer.
The process of constructing new active components can then be
repeated, thereby reusing the active substrate.
[0135] In various methods of the present invention, laser beams are
used to selectively cure the electrically conductive adhesive areas
between the contacts and the metal layers. In one embodiment, the
adhesive areas can be sequentially exposed. In another embodiment,
multiple areas can be simultaneously exposed; thereby increasing
the number of active components simultaneously adhered. An
alternative method employing a mask can also adhere multiple active
components at one time, thereby increasing the rate at which target
substrates can be populated. Means known in the art for scanning
and controlling lasers can be employed, as well as light sources
used in conjunction with aligned masks, particularly as are known
in the photo-lithographic arts.
[0136] In comparison to thin-film manufacturing methods, using
densely populated active substrates and transferring active
components to a target substrate that requires only a sparse array
of active components located thereon does not waste or require
active layer material on a target substrate. The present invention
is also useful in transferring active components made with
crystalline semiconductor materials that have much higher
performance than thin-film active components. Furthermore, the
flatness, smoothness, chemical stability, and heat stability
requirements for a target substrate useful in the present invention
are greatly reduced because the adhesion and transfer process is
not significantly limited by the target substrate material
properties. Manufacturing and material costs are reduced because of
high utilization rates of expensive materials (e.g. the active
substrate) and reduced material and processing requirements for the
target substrate.
[0137] In an experimental demonstration, the structure illustrated
in FIG. 1C was constructed and adhered to a target substrate with
an electrically conductive material. Referring to FIG. 15, a target
substrate was prepared in step 200 by patterning suitable metal
traces, metal contacts, and fiducial marks on the surface of the
target substrate. Optional photo-resist wells were constructed in
optional step 205 to contain a liquid carrier (ink) with metal
nano-particles. The photo-resist wells served to form dams that
prevent the liquid carrier ink from spreading over the target
substrate in undesirable locations. In step 210, a nano-particulate
ink including noble metal nano-particles (in this case Au
nano-particles) and a soft conformable material carrier was
dispensed by an inkjet printer onto the target substrate. The soft
conformable material carrier "ink" was a polymer, useful for
rheological control and particulate stabilization. In particular,
it is useful to prevent nano-particulate agglomeration by
emulsifying the ink or providing coatings on the nano-particles.
Other carriers, e.g. solvents, and particle combinations can be
employed by those knowledgeable in the art, and the present
invention is not limited to this particular example.
[0138] Having prepared the target substrate, active components were
prepared by forming an active layer over a sacrificial layer on an
active crystalline GaAs substrate. The active components were
released from the active substrate by etching away the sacrificial
layer, except for tethers, as described above. A PDMS stamp was
used to separate the active components from the active substrate,
breaking the tethers, and the active components were printed onto
the target substrate in alignment with the contacts and the
dispensed ink in step 215. An optional curing step was employed to
treat the ink and improve the electrical characteristics of the
interface between the active component and the contact in step 220.
A variety of cure methods can be used, for example baking or
exposure to electromagnetic radiation, patterned or unpatterned,
from a variety of sources, for example a laser. Solvents, if
present, can be driven off from the ink and the nano-particles can
be sintered or annealed in contact with the active component and
the target substrate contact. For example, gold particles can be
used to form a GaAs--Au eutectic material that can provide a good
electrical connection with the target substrate. Once the active
component was adhered and electrically connected to the target
substrate, further target substrate processing was employed in step
225 to make a complete device, e.g. including fabrication of
dielectric interconnection layers and film interconnect
metallization.
[0139] The completed experimental device is illustrated in FIG. 16.
Referring to FIG. 16, the active component 20 is a printed
opto-electronic device (for example a solar cell, photo-diode, LED,
or VCSEL) with an electrical connection on the bottom side, as
described above. The electrically conductive layer 50 was a
colloidal, inkjettable ink containing noble metal particles forming
an electrical connection between the metal contact 12 and the
bottom side 72 of the active component 20. The target substrate 10
is a carrier chip or interposing substrate, for example a ceramic
substrate, a printed-circuit board, or a wafer. The metal layer 32
is an ohmic metal contact to the active component semiconductor
material and can include Au--Ge--Ni metals. A dielectric isolation
layer 25 prevents unwanted electrical effects with the active
substrate and also serves to further adhere the active component 20
to the target substrate (as does the adhesive 40 in FIG. 4A).
Patterned layer 42 forms electrical interconnects between the metal
layer 32 and the back side of the target substrate 10 and
electrical interconnects between the contact 12 and the back side
of the target substrate 10. The patterned layer can comprise, for
example, plated Cu--Ni--Au and the two interconnects can form an
anode and cathode for the active component 20.
[0140] The entire package, including the target substrate 10, the
active component 20, and the electrical interconnects 42 comprise a
surface-mount package for an inorganic opto-electronic chip-level
device. FIG. 17 is a photograph of the experimental device
including a ceramic target substrate 10 with a metal contact 12
underlying an InGaP/GaAs solar cell/LED active component 20 with an
inkjet-deposited and annealed Au nano-particle electrically
conductive ink material 50 forming an electrical connection between
the metal contact 12 and the active component 20. Metal layer 32
forms an ohmic contact with the active component 20 and serves as a
probe point, that together with the metal contact 12 can be used to
energize the active component 20. FIG. 18 is a photograph of the
energized opto-electronic device emitting light.
[0141] The invention has been described in detail with reference to
particular embodiments thereof, but it will be understood that
variations and modifications can be effected within the spirit and
scope of the invention.
* * * * *