U.S. patent application number 14/705977 was filed with the patent office on 2015-11-12 for light emitting device.
The applicant listed for this patent is Genesis Photonics Inc.. Invention is credited to Jing-En Huang, Kuan-Chieh Huang, Yi-Ru Huang, Yu-Feng Lin, Shao-Ying Ting.
Application Number | 20150325748 14/705977 |
Document ID | / |
Family ID | 54368569 |
Filed Date | 2015-11-12 |
United States Patent
Application |
20150325748 |
Kind Code |
A1 |
Ting; Shao-Ying ; et
al. |
November 12, 2015 |
LIGHT EMITTING DEVICE
Abstract
A light emitting device includes a light emitting unit, a light
transmissive layer and an encapsulant. The light emitting unit
includes a substrate, an epitaxial structure layer disposed on the
substrate, and a first electrode and a second electrode disposed on
the same side of the epitaxial structure layer, respectively. The
light emitting unit is disposed on the light transmissive layer and
at least a part of the first electrode and a part of the second
electrode are exposed by the light transmissive layer. The
encapsulant encapsulates the light emitting unit and at least
exposes a part of the first electrode and a part of the second
electrode. Each of the first electrode and the second electrode
extends outward from the epitaxial structure layer, and covers at
least a part of an upper surface of the encapsulant,
respectively.
Inventors: |
Ting; Shao-Ying; (Tainan
City, TW) ; Huang; Kuan-Chieh; (Tainan City, TW)
; Huang; Jing-En; (Tainan City, TW) ; Lin;
Yu-Feng; (Tainan City, TW) ; Huang; Yi-Ru;
(Tainan City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Genesis Photonics Inc. |
Tainan City |
|
TW |
|
|
Family ID: |
54368569 |
Appl. No.: |
14/705977 |
Filed: |
May 7, 2015 |
Current U.S.
Class: |
257/98 |
Current CPC
Class: |
H01L 33/38 20130101;
H01L 33/46 20130101; H01L 33/52 20130101; H01L 33/54 20130101; H01L
33/62 20130101; H01L 33/486 20130101; H01L 33/502 20130101; H01L
33/40 20130101 |
International
Class: |
H01L 33/38 20060101
H01L033/38; H01L 33/50 20060101 H01L033/50; H01L 33/60 20060101
H01L033/60; H01L 33/40 20060101 H01L033/40; H01L 33/52 20060101
H01L033/52 |
Foreign Application Data
Date |
Code |
Application Number |
May 7, 2014 |
TW |
103116262 |
May 14, 2014 |
TW |
103116987 |
Apr 27, 2015 |
TW |
104113482 |
Claims
1. A light emitting device, comprising: a light emitting unit,
comprising a substrate; an epitaxial structure layer, disposed on
the substrate; and a first electrode and a second electrode,
respectively disposed on a same side of the epitaxial structure
layer; a light transmissive layer, wherein the light emitting unit
is disposed on the light transmissive layer and the light
transmissive layer at least exposes the first electrode and the
second electrode; and an encapsulant, encapsulating the light
emitting unit and at least exposing a part of the first electrode
and a part of the second electrode, wherein the first electrode and
the second electrode respectively extend outward from the epitaxial
structure layer, and respectively cover at least a part of an upper
surface of the encapsulant.
2. The light emitting device as claimed in claim 1, wherein the
first electrode comprises a first electrode portion connected to
the epitaxial structure layer and a first electrode extending
portion connected to the first electrode portion, and the second
electrode comprises a second electrode portion connected to the
epitaxial structure layer and a second electrode extending portion
connected to the second electrode portion, and the first electrode
extending portion and the second electrode extending portion
respectively extend outward to at least a part of the upper surface
of the encapsulant.
3. The light emitting device as claimed in claim 2, wherein the
first electrode extending portion and the second electrode
extending portion are aligned with or contracted inward relative to
an edge of the upper surface of the encapsulant.
4. The light emitting device as claimed in claim 1, further
comprising: one or a plurality of flat surfaces, each comprising
the light transmissive layer and the encapsulant.
5. The light emitting device as claimed in claim 2, wherein the
first electrode extending portion comprises a plurality of first
grating type electrodes, and the second electrode extending portion
comprises a plurality of second grating type electrodes, the first
grating type electrodes are distributed on the first electrode
portion and a part of the upper surface of the encapsulant, and the
second grating type electrodes are distributed on the second
electrode portion and a part of the upper surface of the
encapsulant.
6. The light emitting device as claimed in claim 2, wherein at
least a part of the first electrode extending portion extends from
an edge of the first electrode portion towards a direction away
from the second electrode portion, and at least a part of the
second electrode extending portion extends from an edge of the
second electrode portion towards a direction away from the first
electrode portion.
7. The light emitting device as claimed in claim 2, wherein the
first electrode extending portion and the second electrode
extending portion respectively comprise a plurality of
sub-electrodes separated from each other.
8. The light emitting device as claimed in claim 7, wherein the
first sub-electrodes of the first electrode extending portion are
located in at least one corner away from the second electrode on
the upper surface of the encapsulant, and the second sub-electrodes
of the second electrode extending portion are located in at least
one corner away from the first electrode on the upper surface of
the encapsulant.
9. The light emitting device as claimed in claim 2, wherein the
first electrode extending portion and the second electrode
extending portion respectively comprise an adhesion layer and a
barrier layer disposed between the adhesion layer and the
encapsulant.
10. The light emitting device as claimed in claim 9, wherein a
material of the adhesion layer comprises gold, tin, aluminium,
silver, copper, indium, bismuth, platinum, gold-tin alloy,
tin-silver alloy, tin-silver-copper alloy (Sn--Ag--Cu (SAC) alloy)
or a combination thereof, and a material of the barrier layer
includes nickel, titanium, tungsten, gold or an alloy of a
combination thereof.
11. The light emitting device as claimed in claim 2, wherein the
first electrode and the second electrode respectively comprise a
reflection layer respectively disposed between the electrode
extending portions and the encapsulant.
12. The light emitting device as claimed in claim 11, wherein a
material of the reflection layer comprises gold, aluminium, silver,
nickel, titanium, or an alloy of a combination thereof.
13. The light emitting device as claimed in claim 1, further
comprising: a reflection layer, disposed on the upper surface of
the encapsulant.
14. The light emitting device as claimed in claim 13, wherein at
least a part of the reflection layer is located between the
electrodes and the encapsulant.
15. The light emitting device as claimed in claim 13, wherein a
material of the reflection layer comprises gold, aluminium, silver,
nickel, titanium, distributed Bragg reflector (DBR), a resin layer
doped with reflection particles with high reflectivity or a
combination thereof.
16. The light emitting device as claimed in claim 1, further
comprising: a wavelength conversion material, wrapping the light
emitting unit and at least exposing a part of the first electrode
and a part of the second electrode.
17. The light emitting device as claimed in claim 16, wherein the
wavelength conversion material comprises a fluorescent material or
a quantum dot material.
18. The light emitting device as claimed in claim 16, wherein the
wavelength conversion material is formed on a surface of the light
emitting unit, formed on a surface of the encapsulant or mixed in
the encapsulant.
19. A light emitting device, comprising: a light emitting unit,
comprising: a substrate, an epitaxial structure layer, disposed on
the substrate; and a first electrode and a second electrode,
respectively disposed on a same side of the epitaxial structure
layer opposite to the substrate; a light transmissive layer,
disposed on the light emitting unit and located at one side of the
substrate opposite to the epitaxial structure layer, the first
electrode and the second electrode; and an encapsulant, located
between the light emitting unit and the light transmissive layer,
and encapsulating the light emitting unit and at least exposing a
part of the first electrode and a part of the second electrode,
wherein the first electrode and the second electrode respectively
extend outward from the epitaxial structure layer, and respectively
cover at least a part of an upper surface of the encapsulant.
20. The light emitting device as claimed in claim 19, wherein the
first electrode comprises a first electrode portion connected to
the epitaxial structure layer and a first electrode extending
portion connected to the first electrode portion, and the second
electrode comprises a second electrode portion connected to the
epitaxial structure layer and a second electrode extending portion
connected to the second electrode portion, and the first electrode
extending portion and the second electrode extending portion
respectively extend outward to at least a part of the upper surface
of the encapsulant.
21. The light emitting device as claimed in claim 20, wherein the
first electrode extending portion and the second electrode
extending portion are aligned with or contracted inward relative to
an edge of the upper surface of the encapsulant.
22. The light emitting device as claimed in claim 19, further
comprising: one or a plurality of flat surfaces, each comprising
the light transmissive layer and the encapsulant.
23. The light emitting device as claimed in claim 20, wherein the
first electrode extending portion comprises a plurality of first
grating type electrodes, and the second electrode extending portion
comprises a plurality of second grating type electrodes, the first
grating type electrodes are distributed on the first electrode
portion and a part of the upper surface of the encapsulant, and the
second grating type electrodes are distributed on the second
electrode portion and a part of the upper surface of the
encapsulant.
24. The light emitting device as claimed in claim 20, wherein at
least a part of the first electrode extending portion extends from
an edge of the first electrode portion towards a direction away
from the second electrode portion, and at least a part of the
second electrode extending portion extends from an edge of the
second electrode portion towards a direction away from the first
electrode portion.
25. The light emitting device as claimed in claim 20, wherein the
first electrode extending portion and the second electrode
extending portion respectively comprise a plurality of
sub-electrodes separated from each other.
26. The light emitting device as claimed in claim 20, wherein the
first electrode extending portion and the second electrode
extending portion respectively comprise an adhesion layer and a
barrier layer disposed between the adhesion layer and the
encapsulant.
27. The light emitting device as claimed in claim 26, wherein a
material of the adhesion layer comprises gold, tin, aluminium,
silver, copper, indium, bismuth, platinum, gold-tin alloy,
tin-silver alloy, tin-silver-copper alloy (Sn--Ag--Cu (SAC) alloy)
or a combination thereof, and a material of the barrier layer
includes nickel, titanium, tungsten, gold or an alloy of a
combination thereof.
28. The light emitting device as claimed in claim 20, wherein the
first electrode and the second electrode respectively comprise a
reflection layer respectively disposed between the electrode
extending portions and the encapsulant.
29. The light emitting device as claimed in claim 28, wherein a
material of the reflection layer comprises gold, aluminium, silver,
nickel, titanium, or an alloy of a combination thereof.
30. The light emitting device as claimed in claim 19, further
comprising: a reflection layer, disposed on the upper surface of
the encapsulant.
31. The light emitting device as claimed in claim 30, wherein at
least a part of the reflection layer is located between the
electrodes and the encapsulant.
32. The light emitting device as claimed in claim 30, wherein a
material of the reflection layer comprises gold, aluminium, silver,
nickel, titanium, distributed Bragg reflector (DBR), a resin layer
doped with reflection particles with high reflectivity or a
combination thereof.
33. The light emitting device as claimed in claim 19, further
comprising: a wavelength conversion material, wrapping the light
emitting unit and at least exposing a part of the first electrode
and a part of the second electrode.
34. The light emitting device as claimed in claim 33, wherein the
wavelength conversion material comprises a fluorescent material or
a quantum dot material.
35. The light emitting device as claimed in claim 33, wherein the
wavelength conversion material is formed on a surface of the light
emitting unit, formed on a surface of the encapsulant or mixed in
the encapsulant.
36. A light emitting device, comprising: a light emitting unit,
comprising: a substrate, an epitaxial structure layer, disposed on
the substrate; and a first electrode and a second electrode,
respectively disposed on a same side of the epitaxial structure
layer; an encapsulant, encapsulating the light emitting unit and at
least exposing a part of the first electrode and a part of the
second electrode, wherein the first electrode and the second
electrode respectively extend upward from the epitaxial structure
layer without covering an upper surface of the encapsulant.
37. The light emitting device as claimed in claim 36, wherein the
first electrode comprises a first electrode portion and a first
electrode extending portion, and the second electrode comprises a
second electrode portion and a second electrode extending portion,
wherein the first electrode extending portion and the second
electrode extending portion respectively protrude out from the
upper surface of the encapsulant.
38. The light emitting device as claimed in claim 37, wherein the
first electrode extending portion comprises a plurality of first
sub-electrodes separated from each other, and the second electrode
extending portion comprises a plurality of second sub-electrodes
separated from each other.
39. The light emitting device as claimed in claim 36, wherein the
encapsulant has one or a plurality of flat surfaces.
40. The light emitting device as claimed in claim 36, further
comprising: a reflection layer, at least disposed on a part of the
upper surface of the encapsulant.
41. The light emitting device as claimed in claim 40, wherein a
material of the reflection layer comprises gold, aluminium, silver,
nickel, titanium, distributed Bragg reflector (DBR), a resin layer
doped with reflection particles with high reflectivity or a
combination thereof.
42. The light emitting device as claimed in claim 36, further
comprising: a wavelength conversion material, wrapping the light
emitting unit and at least exposing a part of the first electrode
and a part of the second electrode.
43. The light emitting device as claimed in claim 42, wherein the
wavelength conversion material comprises a fluorescent material or
a quantum dot material.
44. The light emitting device as claimed in claim 42, wherein the
wavelength conversion material is formed on a surface of the light
emitting unit, formed on a surface of the encapsulant or mixed in
the encapsulant.
45. A light emitting device, comprising: a light emitting unit,
comprising: a substrate, an epitaxial structure layer, disposed on
the substrate; and a first electrode and a second electrode,
respectively disposed on a same side of the epitaxial structure
layer; and an encapsulant, encapsulating the light emitting unit
and at least exposing a part of the first electrode and a part of
the second electrode, wherein the first electrode and the second
electrode respectively extend outward from the epitaxial structure
layer and respectively cover at least a part of an upper surface of
the encapsulant.
46. The light emitting device as claimed in claim 45, wherein the
first electrode comprises a first electrode portion connected to
the epitaxial structure layer and a first electrode extending
portion connected to the first electrode portion, and the second
electrode comprises a second electrode portion connected to the
epitaxial structure layer and a second electrode extending portion
connected to the second electrode portion, and the first electrode
extending portion and the second electrode extending portion
respectively extend outward to at least a part of the upper surface
of the encapsulant.
47. The light emitting device as claimed in claim 46, wherein the
first electrode extending portion and the second electrode
extending portion are aligned with or contracted inward relative to
an edge of the upper surface of the encapsulant.
48. The light emitting device as claimed in claim 45, wherein the
encapsulant has one or a plurality of flat surfaces.
49. The light emitting device as claimed in claim 46, wherein the
first electrode extending portion comprises a plurality of first
grating type electrodes, and the second electrode extending portion
comprises a plurality of second grating type electrodes, the first
grating type electrodes are distributed on the first electrode
portion and a part of the upper surface of the encapsulant, and the
second grating type electrodes are distributed on the second
electrode portion and a part of the upper surface of the
encapsulant.
50. The light emitting device as claimed in claim 46, wherein at
least a part of the first electrode extending portion extends from
an edge of the first electrode portion towards a direction away
from the second electrode portion, and at least a part of the
second electrode extending portion extends from an edge of the
second electrode portion towards a direction away from the first
electrode portion.
51. The light emitting device as claimed in claim 46, wherein the
first electrode extending portion and the second electrode
extending portion respectively comprise a plurality of
sub-electrodes separated from each other.
52. The light emitting device as claimed in claim 46, wherein the
first electrode extending portion and the second electrode
extending portion respectively comprise an adhesion layer and a
barrier layer disposed between the adhesion layer and the
encapsulant.
53. The light emitting device as claimed in claim 52, wherein a
material of the adhesion layer comprises gold, tin, aluminium,
silver, copper, indium, bismuth, platinum, gold-tin alloy,
tin-silver alloy, tin-silver-copper alloy (Sn--Ag--Cu (SAC) alloy)
or a combination thereof, and a material of the barrier layer
includes nickel, titanium, tungsten, gold or an alloy of a
combination thereof.
54. The light emitting device as claimed in claim 46, wherein the
first electrode and the second electrode respectively comprise a
reflection layer respectively disposed between the electrode
extending portions and the encapsulant.
55. The light emitting device as claimed in claim 54, wherein a
material of the reflection layer comprises gold, aluminium, silver,
nickel, titanium, or an alloy of a combination thereof.
56. The light emitting device as claimed in claim 45, further
comprising: a reflection layer, disposed on the upper surface of
the encapsulant.
57. The light emitting device as claimed in claim 56, wherein at
least a part of the reflection layer is located between the
electrodes and the encapsulant.
58. The light emitting device as claimed in claim 56, wherein a
material of the reflection layer comprises gold, aluminium, silver,
nickel, titanium, distributed Bragg reflector (DBR), a resin layer
doped with reflection particles with high reflectivity or a
combination thereof.
59. The light emitting device as claimed in claim 45, further
comprising: a wavelength conversion material, wrapping the light
emitting unit and at least exposing a part of the first electrode
and a part of the second electrode.
60. The light emitting device as claimed in claim 59, wherein the
wavelength conversion material comprises a fluorescent material or
a quantum dot material.
61. The light emitting device as claimed in claim 59, wherein the
wavelength conversion material is formed on a surface of the light
emitting unit, formed on a surface of the encapsulant or mixed in
the encapsulant.
62. A light emitting device, comprising: a light emitting unit,
comprising: a substrate; an epitaxial structure layer, disposed on
the substrate; and a first electrode and a second electrode,
respectively disposed on a same side of the epitaxial structure
layer; a light transmissive layer, wherein the light emitting unit
is disposed on the light transmissive layer and at least exposes
the first electrode and the second electrode; and an encapsulant,
encapsulating the light emitting unit and at least exposing a part
of the first electrode and a part of the second electrode, wherein
the first electrode and the second electrode respectively extend
upward from the epitaxial structure layer without covering an upper
surface of the encapsulant.
63. The light emitting device as claimed in claim 62, wherein the
first electrode comprises a first electrode portion and a first
electrode extending portion, and the second electrode comprises a
second electrode portion and a second electrode extending portion,
wherein the first electrode extending portion and the second
electrode extending portion respectively protrude out from the
upper surface of the encapsulant.
64. The light emitting device as claimed in claim 63, wherein the
first electrode extending portion and the second electrode
extending portion are aligned with or contracted inward relative to
an edge of the upper surface of the encapsulant.
65. The light emitting device as claimed in claim 62, further
comprising: one or a plurality of flat surfaces, each comprising
the light transmissive layer and the encapsulant.
66. The light emitting device as claimed in claim 63, wherein the
first electrode extending portion and the second electrode
extending portion respectively comprise a plurality of
sub-electrodes separated from each other.
67. The light emitting device as claimed in claim 66, wherein the
first sub-electrodes and the second sub-electrodes are laminar
electrodes, spherical electrodes, or grating type electrodes.
68. The light emitting device as claimed in claim 62, further
comprising: a reflection layer, at least disposed on a part of the
upper surface of the encapsulant.
69. The light emitting device as claimed in claim 68, wherein a
material of the reflection layer comprises gold, aluminium, silver,
nickel, titanium, distributed Bragg reflector (DBR), a resin layer
doped with reflection particles with high reflectivity or a
combination thereof.
70. The light emitting device as claimed in claim 62, further
comprising: a wavelength conversion material, wrapping the light
emitting unit and at least exposing a part of the first electrode
and a part of the second electrode.
71. The light emitting device as claimed in claim 70, wherein the
wavelength conversion material comprises a fluorescent material or
a quantum dot material.
72. The light emitting device as claimed in claim 70, wherein the
wavelength conversion material is formed on a surface of the light
emitting unit, formed on a surface of the encapsulant or mixed in
the encapsulant.
73. A light emitting device, comprising: a light emitting unit,
comprising: a substrate; an epitaxial structure layer, disposed on
the substrate; and a first electrode and a second electrode,
respectively disposed on a same side of the epitaxial structure
layer opposite to the substrate; a light transmissive layer,
disposed on the light emitting unit and located at one side of the
substrate opposite to the epitaxial structure layer, the first
electrode and the second electrode; and an encapsulant, located
between the light emitting unit and the light transmissive layer,
and encapsulating the light emitting unit and at least exposing a
part of the first electrode and a part of the second electrode,
wherein the first electrode and the second electrode respectively
extend upward from the epitaxial structure layer without covering
an upper surface of the encapsulant.
74. The light emitting device as claimed in claim 73, wherein the
first electrode comprises a first electrode portion and a first
electrode extending portion, and the second electrode comprises a
second electrode portion and a second electrode extending portion,
wherein the first electrode extending portion and the second
electrode extending portion respectively protrude out from the
upper surface of the encapsulant.
75. The light emitting device as claimed in claim 74, wherein the
first electrode extending portion and the second electrode
extending portion are aligned with or contracted inward relative to
an edge of the upper surface of the encapsulant.
76. The light emitting device as claimed in claim 73, further
comprising: one or a plurality of flat surfaces, each comprising
the light transmissive layer and the encapsulant.
77. The light emitting device as claimed in claim 74, wherein the
first electrode extending portion and the second electrode
extending portion respectively comprise a plurality of
sub-electrodes separated from each other.
78. The light emitting device as claimed in claim 77, wherein the
first sub-electrodes and the second sub-electrodes are laminar
electrodes, spherical electrodes, or grating type electrodes.
79. The light emitting device as claimed in claim 73, further
comprising: a reflection layer, at least disposed on a part of the
upper surface of the encapsulant.
80. The light emitting device as claimed in claim 79, wherein a
material of the reflection layer comprises gold, aluminium, silver,
nickel, titanium, distributed Bragg reflector (DBR), a resin layer
doped with reflection particles with high reflectivity or a
combination thereof.
81. The light emitting device as claimed in claim 73, further
comprising: a wavelength conversion material, wrapping the light
emitting unit and at least exposing a part of the first electrode
and a part of the second electrode.
82. The light emitting device as claimed in claim 81, wherein the
wavelength conversion material comprises a fluorescent material or
a quantum dot material.
83. The light emitting device as claimed in claim 81, wherein the
wavelength conversion material is formed on a surface of the light
emitting unit, formed on a surface of the encapsulant or mixed in
the encapsulant.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the priority benefits of Taiwan
application serial no. 103116262, filed on May 7, 2014, Taiwan
application serial no. 104113482, filed on Apr. 27, 2015, and
Taiwan application serial no. 103116987, filed on May 14, 2014. The
entirety of each of the above-mentioned patent applications is
hereby incorporated by reference herein and made a part of this
specification.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The invention relates to a light emitting device, and
particularly relates to a light emitting diode (LED) package
structure.
[0004] 2. Description of Related Art
[0005] In a conventional flip-chip LED package structure, an edge
of an epitaxial structure layer is aligned with or contracted
inward relative to an edge of a substrate, and edges of an N
electrode and a P electrode are aligned with the edge of the
epitaxial structure layer or is spaced by a vertical distance with
the edge of the epitaxial structure layer. Namely, an orthogonal
projection area of the N electrode and the P electrode on the
substrate is smaller than an orthogonal projection area of the
epitaxial structure layer on the substrate. In case of such
configuration, when the flip-chip LED package is to be assembled to
an external circuit, since an electrode area of the N electrode and
the P electrode is relative small, the LED package may have
problems of inaccurate alignment and poor electrode contact in
assembling.
SUMMARY OF THE INVENTION
[0006] The invention is directed to a light emitting device having
a larger electrode area, which avails improving an alignment
accuracy in follow-up assembling.
[0007] The invention provides a light emitting device including a
light emitting unit, a light transmissive layer and an encapsulant.
The light emitting unit includes a substrate, an epitaxial
structure layer disposed on the substrate, and a first electrode
and a second electrode respectively disposed on a same side of the
epitaxial structure layer. The light emitting unit is disposed on
the light transmissive layer and the light transmissive layer at
least exposes the first electrode and the second electrode. The
encapsulant encapsulates the light emitting unit and at least
exposes a part of the first electrode and a part of the second
electrode. The first electrode and the second electrode
respectively extend outward from the epitaxial structure layer, and
respectively cover at least a part of an upper surface of the
encapsulant.
[0008] In an embodiment of the invention, the first electrode
includes a first electrode portion connected to the epitaxial
structure layer and a first electrode extending portion connected
to the first electrode portion, and the second electrode includes a
second electrode portion connected to the epitaxial structure layer
and a second electrode extending portion connected to the second
electrode portion, and the first electrode extending portion and
the second electrode extending portion respectively extend outward
to at least a part of the upper surface of the encapsulant.
[0009] In an embodiment of the invention, the first electrode
extending portion and the second electrode extending portion are
aligned with or contracted inward relative to an edge of the upper
surface of the encapsulant.
[0010] In an embodiment of the invention, the first electrode
portion and the second electrode portion are aligned with or
contracted inward relative to an edge of the epitaxial structure
layer.
[0011] In an embodiment of the invention, the light emitting device
further includes one or a plurality of flat surfaces, and each of
the flat surfaces includes the light transmissive layer and the
encapsulant.
[0012] In an embodiment of the invention, the first electrode
extending portion includes a plurality of first grating type
electrodes, and the second electrode extending portion includes a
plurality of second grating type electrodes, the first grating type
electrodes are distributed on the first electrode portion and a
part of the upper surface of the encapsulant, and the second
grating type electrodes are distributed on the second electrode
portion and a part of the upper surface of the encapsulant.
[0013] In an embodiment of the invention, at least a part of the
first electrode extending portion extends from an edge of the first
electrode portion towards a direction away from the second
electrode portion, and at least a part of the second electrode
extending portion extends from an edge of the second electrode
portion towards a direction away from the first electrode
portion.
[0014] In an embodiment of the invention, the first electrode
extending portion and the second electrode extending portion
respectively include a plurality of sub-electrodes separated from
each other.
[0015] In an embodiment of the invention, the sub-electrodes of the
first electrode extending portion are located in at least one
corner away from the second electrode on the upper surface of the
encapsulant, and the sub-electrodes of the second electrode
extending portion are located in at least one corner away from the
first electrode on the upper surface of the encapsulant.
[0016] In an embodiment of the invention, top surfaces of the first
electrode extending portion and the second electrode extending
portion are substantially coplanar with the upper surface of the
encapsulant.
[0017] In an embodiment of the invention, the first electrode
portion and the first electrode extending portion are seamlessly
connected, and the second electrode portion and the second
electrode extending portion are seamlessly connected.
[0018] In an embodiment of the invention, the first electrode
extending portion and the second electrode extending portion
respectively include an adhesion layer and a barrier layer disposed
between the adhesion layer and the encapsulant.
[0019] In an embodiment of the invention, a material of the
adhesion layer includes gold, tin, aluminium, silver, copper,
indium, bismuth, platinum, gold-tin alloy, tin-silver alloy,
tin-silver-copper alloy (Sn--Ag--Cu (SAC) alloy) or a combination
thereof, and a material of the barrier layer includes nickel,
titanium, tungsten, gold or an alloy of a combination thereof.
[0020] In an embodiment of the invention, the first electrode and
the second electrode respectively include a reflection layer
respectively disposed between the electrode extending portions and
the encapsulant.
[0021] In an embodiment of the invention, a material of the
reflection layer includes gold, aluminium, silver, nickel,
titanium, or an alloy of a combination thereof
[0022] In an embodiment of the invention, the light emitting device
further includes a reflection layer, disposed on the upper surface
of the encapsulant.
[0023] In an embodiment of the invention, at least a part of the
reflection layer is located between the electrodes and the
encapsulant.
[0024] In an embodiment of the invention, a material of the
reflection layer includes gold, aluminium, silver, nickel,
titanium, distributed Bragg reflector (DBR), a resin layer doped
with reflection particles with high reflectivity or a combination
thereof
[0025] In an embodiment of the invention, the light emitting device
further includes a wavelength conversion material wrapping the
light emitting unit and at least exposing a part of the first
electrode and a part of the second electrode.
[0026] In an embodiment of the invention, the wavelength conversion
material includes a fluorescent material or a quantum dot
material.
[0027] In an embodiment of the invention, the wavelength conversion
material is formed on a surface of the light emitting unit, formed
on a surface of the encapsulant or mixed in the encapsulant.
[0028] In an embodiment of the invention, the first sub-electrodes
and the second sub-electrodes are laminar electrodes, spherical
electrodes, or grating type electrodes.
[0029] An embodiment of the invention provides a light emitting
device including a light emitting unit, a light transmissive layer
and an encapsulant. The light emitting unit includes a substrate,
an epitaxial structure layer disposed on the substrate, and a first
electrode and a second electrode respectively disposed on a same
side of the epitaxial structure layer opposite to the substrate.
The light transmissive layer is disposed on the light emitting unit
and is located at one side of the substrate opposite to the
epitaxial structure layer, the first electrode and the second
electrode. The encapsulant is located between the light emitting
unit and the light transmissive layer. The encapsulant encapsulates
the light emitting unit and at least exposes a part of the first
electrode and a part of the second electrode. The first electrode
and the second electrode respectively extend outward from the
epitaxial structure layer, and respectively cover at least a part
of an upper surface of the encapsulant.
[0030] An embodiment of the invention provides a light emitting
device including a light emitting unit and an encapsulant. The
light emitting unit includes a substrate, an epitaxial structure
layer disposed on the substrate, and a first electrode and a second
electrode respectively disposed on a same side of the epitaxial
structure layer. The encapsulant encapsulates the light emitting
unit and at least exposes a part of the first electrode and a part
of the second electrode. The first electrode and the second
electrode respectively extend upward from the epitaxial structure
layer without covering an upper surface of the encapsulant.
[0031] An embodiment of the invention provides a light emitting
device including a light emitting unit and an encapsulant. The
light emitting unit includes a substrate, an epitaxial structure
layer disposed on the substrate, and a first electrode and a second
electrode respectively disposed on a same side of the epitaxial
structure layer. The encapsulant encapsulates the light emitting
unit and at least exposes a part of the first electrode and a part
of the second electrode. The first electrode and the second
electrode respectively extend outward from the epitaxial structure
layer and respectively cover at least a part of an upper surface of
the encapsulant.
[0032] An embodiment of the invention provides a light emitting
device including a light emitting unit, a light transmissive layer
and an encapsulant. The light emitting unit includes a substrate,
an epitaxial structure layer disposed on the substrate, and a first
electrode and a second electrode respectively disposed on a same
side of the epitaxial structure layer. The light emitting unit is
disposed on the light transmissive layer and at least exposes the
first electrode and the second electrode. The encapsulant
encapsulates the light emitting unit and at least exposes a part of
the first electrode and a part of the second electrode. The first
electrode and the second electrode respectively extend upward from
the epitaxial structure layer without covering an upper surface of
the encapsulant.
[0033] An embodiment of the invention provides a light emitting
device including a light emitting unit, a light transmissive layer
and an encapsulant. The light emitting unit includes a substrate,
an epitaxial structure layer disposed on the substrate, and a first
electrode and a second electrode respectively disposed on a same
side of the epitaxial structure layer opposite to the substrate.
The light transmissive layer is disposed on the light emitting unit
and is located at one side of the substrate opposite to the
epitaxial structure layer, the first electrode and the second
electrode. The encapsulant is located between the light emitting
unit and the light transmissive layer, and encapsulates the light
emitting unit and at least exposes a part of the first electrode
and a part of the second electrode. The first electrode and the
second electrode respectively extend upward from the epitaxial
structure layer without covering an upper surface of the
encapsulant.
[0034] According to the above descriptions, since the first
electrode and the second electrode of the light emitting unit
according to an embodiment of the invention extend outward from the
epitaxial structure layer, and may cover at least a part of the
encapsulant, compared to the conventional design of the first
electrode and the second electrode, the light emitting device (the
LED package) according to the embodiment of the invention has a
larger electrode area, and when the light emitting device is to be
assembled to an external circuit, the alignment accuracy of
assembling is effectively improved. Since the first electrode and
the second electrode of the light emitting unit according to an
embodiment of the invention extend upward from the epitaxial
structure layer, and protrude out of the encapsulant, it avails a
follow-up chip bonding process.
[0035] In order to make the aforementioned and other features and
advantages of the invention comprehensible, several exemplary
embodiments accompanied with figures are described in detail
below.
BRIEF DESCRIPTION OF THE DRAWINGS
[0036] The accompanying drawings are included to provide a further
understanding of the invention, and are incorporated in and
constitute a part of this specification. The drawings illustrate
embodiments of the invention and, together with the description,
serve to explain the principles of the invention.
[0037] FIG. 1A is a top view of a light emitting diode (LED)
package structure according to an embodiment of the invention.
[0038] FIG. 1B is a cross-sectional view of the LED package
structure of FIG. 1A viewing along a line A-A.
[0039] FIG. 2A is a top view of an LED package structure according
to another embodiment of the invention.
[0040] FIG. 2B is a cross-sectional view of the LED package
structure of FIG. 2A viewing along a line B-B.
[0041] FIG. 3A is a top view of an LED package structure according
to another embodiment of the invention.
[0042] FIG. 3B is a cross-sectional view of the LED package
structure of FIG. 3A viewing along a line C-C.
[0043] FIG. 4A is a top view of an LED package structure according
to another embodiment of the invention.
[0044] FIG. 4B is a cross-sectional view of the LED package
structure of FIG. 4A viewing along a line D-D.
[0045] FIG. 5A is a top view of an LED package structure according
to another embodiment of the invention.
[0046] FIG. 5B is a cross-sectional view of the LED package
structure of FIG. 5A viewing along a line E-E.
[0047] FIG. 6A is a top view of an LED package structure according
to another embodiment of the invention.
[0048] FIG. 6B is a cross-sectional view of the LED package
structure of FIG. 6A viewing along a line F-F.
[0049] FIG. 7A is a top view of an LED package structure according
to another embodiment of the invention.
[0050] FIG. 7B is a cross-sectional view of the LED package
structure of FIG. 7A viewing along a line G-G.
[0051] FIG. 8A is a top view of an LED package structure according
to another embodiment of the invention.
[0052] FIG. 8B is a cross-sectional view of the LED package
structure of FIG. 8A viewing along a line H-H.
[0053] FIG. 9A is a top view of an LED package structure according
to another embodiment of the invention.
[0054] FIG. 9B is a cross-sectional view of the LED package
structure of FIG. 9A viewing along a line I-I.
[0055] FIG. 10A is a top view of an LED package structure according
to another embodiment of the invention.
[0056] FIG. 10B is a cross-sectional view of the LED package
structure of FIG. 10A viewing along a line J-J.
[0057] FIG. 11A is a top view of an LED package structure according
to another embodiment of the invention.
[0058] FIG. 11B is a cross-sectional view of the LED package
structure of FIG. 11A viewing along a line K-K.
[0059] FIG. 12A is a top view of an LED package structure according
to another embodiment of the invention.
[0060] FIG. 12B is a cross-sectional view of the LED package
structure of FIG. 12A bonded to a circuit board in a flip-chip
manner and viewing along a line L-L.
[0061] FIG. 13 is a top view of an LED package structure according
to another embodiment of the invention.
[0062] FIG. 14 is a cross-sectional view of an LED package
structure according to another embodiment of the invention.
[0063] FIG. 15A is a top view of an LED package structure according
to another embodiment of the invention.
[0064] FIG. 15B is a cross-sectional view of the LED package
structure of FIG. 15A viewing along a line M-M.
[0065] FIG. 16A is a top view of an LED package structure according
to another embodiment of the invention.
[0066] FIG. 16B is a cross-sectional view of the LED package
structure of FIG. 16A viewing along a line N-N.
[0067] FIG. 17A is a top view of an LED package structure according
to another embodiment of the invention.
[0068] FIG. 17B is a cross-sectional view of the LED package
structure of FIG. 17A viewing along a line P-P.
[0069] FIG. 18A is a cross-sectional view of an LED package
structure of FIG. 1B bonded to a circuit board through a flip-chip
bonding manner.
[0070] FIG. 18B is a partial enlarged view of a region M1 in FIG.
18A.
DESCRIPTION OF EMBODIMENTS
[0071] FIG. 1A is a top view of a light emitting device according
to an embodiment of the invention. FIG. 1B is a cross-sectional
view of the light emitting device of FIG. 1A viewing along a line
A-A. Referring to FIG. 1A and FIG. 1B, in the present embodiment,
the light emitting device 100a includes a light transmissive layer
110, a light emitting unit 120a, and an encapsulant 130a. The light
emitting unit 120a is, for example, a light emitting diode (LED),
and includes a substrate 122, an epitaxial structure layer 124, a
first electrode 126a and a second electrode 128a. The epitaxial
structural layer 124 is disposed on the substrate 122. In the
present embodiment, a periphery of the epitaxial structure layer
124 is aligned with a periphery of the substrate 122. The first
electrode 126a is disposed on one side of the epitaxial structure
layer 124. The second electrode 128a is disposed on the epitaxial
structure layer 124, where the second electrode 128a and the first
electrode 126a are located on the same side of the epitaxial
structure layer 124 opposite to the substrate 122, and the first
electrode 126a and the second electrode 128a have an interval d
therebetween. The light emitting unit 120a is disposed on the light
transmissive layer 110, and the light transmissive layer 110 is
located at one side of the substrate 122 of the light emitting unit
120a that is opposite to the epitaxial structure layer 124, the
first electrode 126a and the second electrode 128a, and at least
exposes a part of the first electrode 126a and a part of the second
electrode 128a. The encapsulant 130a is disposed on the light
transmissive layer 110, and is located between the light emitting
unit 120a and the light transmissive layer 110, where the
encapsulant 120a encapsulates the light emitting unit 120a and
exposes at least a part of the first electrode 126a and a part of
the second electrode 128a, and the first electrode 126a and the
second electrode 128a respectively extend outward from the
epitaxial structure layer 124, and respectively cover at least a
part of an upper surface 132a of the encapsulant 130a. In detail,
the epitaxial structure layer 124 at least includes a first
semiconductor layer (not shown), a light emitting layer (not shown)
and a second semiconductor layer (not shown) electrically connected
to each other in a sequence, where the first electrode 126a is
electrically connected to the first semiconductor layer, and the
second electrode 128a is electrically connected to the second
semiconductor layer. In the present embodiment, an edge of the
encapsulant 130a is aligned with an edge of the light transmissive
layer 110, such that the light emitting device 100a has one or a
plurality of flat surfaces.
[0072] In detail, the light transmissive layer 110 of the present
embodiment is adapted to guide the light emitted by the light
emitting unit 120a and is pervious to the light, where a material
of the light transmissive layer 110 is, for example, a transparent
inorganic material, which includes but is not limited to glass or
ceramic; or a transparent organic material, which includes but is
not limited to silicone, epoxy resin, or various resins, and a
light transmittance of the light transmissive layer 110 is at least
50%, preferably. A pattern of the light transmissive layer 110 can
be a flat light transmissive plate or a light transmissive layer
with other shapes. In other embodiments of the invention, the light
emitting device 100a may not include the light transmissive layer
110, and the encapsulant 130a has one or a plurality of flat
surfaces. The light emitting unit 120a is, for example, a flip-chip
LED chip, where a material of the substrate122 of the light
emitting unit 120a is, for example, sapphire, gallium nitride,
gallium oxide, silicon carbide or zinc oxide, though the invention
is not limited thereto. Moreover, the first electrode 126a of the
present embodiment includes a first electrode portion 126a1 and a
first electrode extending portion 126a2. The second electrode 128a
includes a second electrode portion 128a1 and a second electrode
extending portion 128a2. Edges of the first electrode portion 126a1
and the second electrode portion 128a1 are aligned with or not
aligned with (for example, contracted inward relative to) the edge
of the epitaxial structure layer 124. The first electrode extending
portion 126a2 is located on the first electrode portion 126a1, and
extends outward to cover the upper surface 132a of the encapsulant
130a. The second electrode extending portion 128a2 is located on
the second electrode portion 128a1, and extends outward to cover
the upper surface 132a of the encapsulant 130a. Here, the first
electrode portion 126a1 and the first electrode extending portion
126a2 may adopt the same material or different materials, and the
second electrode portion 128a1 and the second electrode extending
portion 128a2 may also adopt the same material or different
materials, which is not limited by the invention. In the present
embodiment, the first electrode extending portion 126a2
respectively extends upward from the first electrode portion 126a1
and extends along a direction away from the second electrode
portion 128a1, and the second electrode extending portion 128a2
respectively extends upward from the second electrode portion 128a1
and extends along a direction away from the first electrode portion
126a1.
[0073] Moreover, a material of the encapsulant 130a is, for
example, a transparent inorganic material or organic material,
where the inorganic material includes but is not limited to glass
or ceramic, and the organic material includes but is not limited to
silicone, epoxy resin, or various resins. The light emitting device
100a further includes at least one wavelength conversion material,
where the wavelength conversion material includes but is not
limited to a fluorescent material or a quantum dot material. The
wavelength conversion material 134a can be doped in the encapsulant
130a for changing a wavelength of the light emitted by the light
emitting unit 120a. In other embodiments of the invention, a
wavelength conversion material layer can be directly formed on a
surface of the light emitting unit 120a, and at least a part of the
first electrode 126a and a part of the second electrode 128a are
exposed, and the wavelength conversion material layer is located
between the encapsulant 130a and the light emitting unit 120a, and
a method for forming the wavelength conversion material layer
includes but is not limited to spray coating or adhering. In
another embodiment of the invention, the wavelength conversion
material layer can be formed on the surface of the encapsulant
130a, and at least a part of the first electrode 126a and a part of
the second electrode 128a are exposed, and the encapsulant 130a is
located between the wavelength conversion material layer and the
light emitting unit 120a, and a method for forming the wavelength
conversion material layer includes but is not limited to spray
coating or adhering. Certainly, in other embodiments, the light
emitting device 100a may not include the wavelength conversion
material, which is still a technical scheme adopted by the
invention without departing from the protection range of the
invention.
[0074] In brief, since the first electrode 126a and the second
electrode 128a of the present embodiment have the first electrode
extending portion 126a2 and the second electrode extending portion
128a2 covering the upper surface 132a of the encapsulant 130a,
compared to the conventional design of the first electrode and the
second electrode, the light emitting device 100a (for example, the
LED package) of the present embodiment has a larger electrode area.
Moreover, when the LED package 100a is to be assembled to an
external circuit (not shown), the design of the first electrode
126a and the second electrode 128a avails improving the alignment
accuracy of the LED package in assembling and avoiding a
conventional problem of poor electrode contact. To be specific,
since the first electrode extending portion 126a2 and the second
electrode extending portion 128a2 respectively enlarge the areas of
the first electrode portion 126a1 and the second electrode portion
128a1, when the first electrode 126a and the second electrode 128a
are respectively bonded to a circuit board through a solder paste,
conductive bumps or other conductive connection material, due to
overflow of the conductive connection material (for example, the
solder paste), the solder paste on the first electrode 126a and the
solder paste on the second electrode 128a are contacted to cause a
short circuit. Therefore, by adopting the first electrode extending
portion 126a2 and the second electrode extending portion 128a2 of
the present embodiment, the light emitting device 100a has a larger
electrode area, so that when the light emitting device 100a is
bonded to the circuit board through the solder paste, the situation
of short circuit caused by overflow of the solder paste is
mitigated or avoided, so as to ensure bonding reliability.
[0075] It should be noticed that in the present embodiment, an edge
of the first electrode extending portion 126a2 and an edge of the
second electrode extending portion 128a2 are aligned with an edge
of the encapsulant 130a and an edge of the light transmissive layer
110, besides that the electrode area is enlarged to increase the
alignment accuracy, such design can be more simple in a
manufacturing process, so as to save a manufacturing time, and a
reason thereof is that the encapsulant 130a can encapsulate a
plurality of the light emitting units 120a having the first
electrode portion 126a1 and the second electrode portion 128a1 in
one process, and after the first electrode extending portion 126a2
and the second electrode extending portion 128a2 are simultaneously
plated, a cutting process is performed to form the light emitting
device 100a (for example, the LED package structure).
[0076] It should be noticed that reference numbers of the
components and a part of contents of the aforementioned embodiment
are also used in the following embodiment, wherein the same
reference numbers denote the same or like components, and
descriptions of the same technical contents are omitted. The
aforementioned embodiment can be referred for descriptions of the
omitted parts, and detailed descriptions thereof are not repeated
in the following embodiment.
[0077] FIG. 2A is a top view of a light emitting device according
to another embodiment of the invention. FIG. 2B is a
cross-sectional view of the light emitting device of FIG. 2A
viewing along a line B-B. Referring to FIG. 2A and FIG. 2B, the
light emitting device 100b of the present embodiment is similar to
the light emitting device 100a of FIG. 1A and FIG. 1B, and a main
difference therebetween is that the first electrode extending
portion 126b2 of the first electrode 126b is composed of a
plurality of first grating type electrodes R1, and the second
electrode extending portion 128b2 of the second electrode 128b is
composed of a plurality of second grating type electrodes R2. A
part of the first grating type electrodes R1 and a part of the
second grating type electrodes R2 respectively extend upward from
the first electrode portion 126b1 and the second electrode portion
128b1, and a part of the first grating type electrodes R1 and a
part of the second grating type electrodes R2 are disposed on the
upper surface 132a of the encapsulant 130a.
[0078] The first grating type electrodes R1 are arranged in
intervals (for example, equally spaced) and expose a part of the
first electrode portion 126b1 and a part of the encapsulant 130a.
The second grating type electrodes R2 are arranged in intervals
(for example, equally spaced) and expose a part of the second
electrode portion 128b1 and a part of the encapsulant 130a.
Particularly, each of the first grating type electrodes R1 has a
first top surface T1, and each of the second grating type
electrodes R2 has a second top surface T2. The first top surfaces
T1 of the first gating type electrodes R1 and the second top
surfaces T2 of the second grating type electrodes R2 are
substantially coplanar. In this way, when the light emitting device
100b is subsequently assembled to an external circuit (not shown),
the design of the first electrode 126a and the second electrode
128b of the light emitting unit 120b can provide a good assembling
flatness and a larger electrode area to facilitate subsequent
assembling of the LED package structure 100b.
[0079] FIG. 3A is a top view of a light emitting device according
to another embodiment of the invention. FIG. 3B is a
cross-sectional view of the light emitting device of FIG. 3A
viewing along a line C-C. Referring to FIG. 3A and FIG. 3B, the
light emitting device 100c of the present embodiment is similar to
the light emitting device 100b of FIG. 2A and FIG. 2B, and a main
difference therebetween is that the first electrode extending
portion 126c2 of the present embodiment is composed of a plurality
of first grating type electrodes R1', and the second electrode
extending portion 128c2 is composed of a plurality of second
grating type electrodes R2', where the first grating type
electrodes R1' and the second grating type electrodes R2' are
further disposed at the interval d between the first electrode 126c
and the second electrode 128c. In this way, the electrode area of
the light emitting unit 120c can extend to the encapsulant 130a
from the epitaxial structure layer 124, such that the light
emitting device 100c has a larger electrode area to achieve a
simple manufacturing process, and avail improving the alignment
accuracy of subsequent assembling process. It should be noticed
that the connection between the grating type electrodes and the
circuit board can be implemented through an anisotropic conductive
adhesive.
[0080] FIG. 4A is a top view of a light emitting device according
to another embodiment of the invention. FIG. 4B is a
cross-sectional view of the light emitting device of FIG. 4A
viewing along a line D-D. Referring to FIG. 4A and FIG. 4B, the
light emitting device 100d of the present embodiment is similar to
the light emitting device 100a of FIG. 1A and FIG. 1B, and a main
difference therebetween is that the encapsulant 130d of the present
embodiment further wraps the first electrode 126d and the second
electrode 128d and exposes the upper surfaces of the above
electrodes, and the encapsulant 130d fills up the interval d
between the first electrode 126d and the second electrode 128d,
where a sidewall of the first electrode extending portion 126d2 and
a sidewall of the second electrode extending portion 128d2 are also
wrapped by the encapsulant 130d. Moreover, the edge of the first
electrode extending portion 126d2 and the edge of the second
electrode extending portion 128d2 are contracted relative to the
edge of the encapsulant 130d and the edge of the light transmissive
layer 110. A first upper surface S1 of the first electrode
extending portion 126d2 and a second upper surface S2 of the second
electrode extending portion 128d2 are substantially coplanar with
the upper surface 132d of the encapsulant 130d. Namely, the first
electrode extending portion 126d2 is disposed on the first
electrode portion 126d1, and the first upper surface S1 of the
first electrode extending portion 126d2 is substantially coplanar
with the upper surface 132d of the encapsulant 130d. The second
electrode extending portion 128d2 is disposed on the second
electrode portion 128d1, and the second upper surface S2 of the
second electrode extending portion 128d2 is substantially coplanar
with the upper surface 132d of the encapsulant 130d. In this way,
when the light emitting device 100d is electrically connected to an
external circuit (not shown), the design of the first electrode
126d and the second electrode 128d of the light emitting unit 120d
results in a fact that the light emitting device 100d has no
assembling gap in assembling, so as to effectively prevent moisture
and oxygen from entering the light emitting device 100d.
[0081] FIG. 5A is a top view of a light emitting device according
to another embodiment of the invention. FIG. 5B is a
cross-sectional view of the light emitting device of FIG. 5A
viewing along a line E-E. Referring to FIG. 5A and FIG. 5B, the
light emitting device 100e of the present embodiment is similar to
the light emitting device 100d of FIG. 4A and FIG. 4B, and a main
difference therebetween is that the first electrode extending
portion 126e2 and the first electrode portion 126e1 of the present
embodiment have a seamless connection therebetween, and the second
electrode extending portion 128e2 and the second electrode portion
128e1 have a seamless connection therebetween. Namely, the first
electrode extending portion 126e2 and the first electrode portion
126e1 of the first electrode 126e of the light emitting unit 120e
are formed integrally, and the second electrode extending portion
128e2 and the second electrode portion 128e1 of the second
electrode 128e are formed integrally, such that integrity of the
light emitting device 100e is better so as to achieve better
reliability.
[0082] FIG. 6A is a top view of a light emitting device according
to another embodiment of the invention. FIG. 6B is a
cross-sectional view of the light emitting device of FIG. 6A
viewing along a line F-F. Referring to FIG. 6A and FIG. 6B, the
light emitting device 100f of the present embodiment is similar to
the light emitting device 100d of FIG. 4A and FIG. 4B, and a main
difference therebetween is that the edge of the first electrode
extending portion 126f2 and the edge of the second electrode
extending portion 128f2 are aligned with the edge of the
encapsulant 130f and the edge of the light transmissive unit 110,
and are not wrapped by the encapsulant 130f. Now, the first
electrode extending portion 126f2 of the light emitting unit 120f
is disposed on the first electrode portion 126f1, and the first
upper surface S1' of the first electrode extending portion 126f2 is
substantially coplanar with the upper surface 132f of the
encapsulant 130f. The second electrode extending portion 128f2 of
the light emitting unit 120f is disposed on the second electrode
portion 128f1, and the second upper surface S2' of the second
electrode extending portion 128f2 is substantially coplanar with
the upper surface 132f of the encapsulant 130f.
[0083] FIG. 7A is a top view of a light emitting device according
to another embodiment of the invention. FIG. 7B is a
cross-sectional view of the light emitting device of FIG. 7A
viewing along a line G-G. Referring to FIG. 7A and FIG. 7B, the
light emitting device 100g of the present embodiment is similar to
the light emitting device 100f of FIG. 6A and FIG. 6B, and a main
difference therebetween is that the first electrode extending
portion 126g2 and the first electrode portion 126g1 of the present
embodiment have a seamless connection therebetween, and the second
electrode extending portion 128g2 and the second electrode portion
128g1 have a seamless connection therebetween. Namely, the first
electrode extending portion 126g2 and the first electrode portion
126g1 of the first electrode 126g of the light emitting unit 120g
are formed integrally, and the second electrode extending portion
128g2 and the second electrode portion 128g1 of the second
electrode 128g are formed integrally.
[0084] FIG. 8A is a top view of a light emitting device according
to another embodiment of the invention. FIG. 8B is a
cross-sectional view of the light emitting device of FIG. 8A
viewing along a line H-H. Referring to FIG. 8A and FIG. 8B, the
light emitting device 100h of the present embodiment is similar to
the light emitting device 100g of FIG. 7A and FIG. 7B, and a main
difference therebetween is that the first electrode 126h of the
light emitting unit 120h of the present embodiment further includes
a first connection portion 126h3 connecting the first electrode
portion 126h1 and the first electrode extending portion 126h2. An
extending direction of the first connection portion 126h3 is
perpendicular to an extending direction of the first electrode
portion 126h1 and an extending direction of the first electrode
extending portion 126h2. The first electrode portion 126h1, the
first connection portion 126h3 and the first electrode extending
portion 126h2 may have a seamless connection therebetween. The
second electrode 128h of the light emitting unit 120h further
includes a second connection portion 128h3 connecting the second
electrode portion 128h1 and the second electrode extending portion
128h2. An extending direction of the second connection portion
128h3 is perpendicular to an extending direction of the second
electrode portion 128h1 and an extending direction of the second
electrode extending portion 128h2. The second electrode portion
128h1, the second connection portion 128h3 and the second electrode
extending portion 128h2 may have a seamless connection
therebetween. The first upper surface S1'' of the first electrode
extending portion 126h2 and the second upper surface S2'' of the
second electrode extending portion 128h2 are substantially coplanar
with the upper surface 132h of the encapsulant 130h. The
encapsulant 130h fills up the interval d between the first
electrode 126h and the second electrode 128h. The edge of the first
electrode extending portion 126h2 and the edge of the second
electrode extending portion 128h2 are aligned with the edge of the
encapsulant 130h and the edge of the light transmissive layer
110.
[0085] FIG. 9A is a top view of a light emitting device according
to another embodiment of the invention. FIG. 9B is a
cross-sectional view of the light emitting device of FIG. 9A
viewing along a line I-I. Referring to FIG. 9A and FIG. 9B, the
light emitting device 100i of the present embodiment is similar to
the light emitting device 100h of FIG. 8A and FIG. 8B, and a main
difference therebetween is that the sidewall of the first electrode
extending portion 126i2 and the sidewall of the second electrode
extending portion 128i2 are wrapped by the encapsulant 130i in this
embodiment. Namely, the first electrode 126i, the second electrode
128i, the epitaxial structure layer 124 and the substrate 122 of
the light emitting unit 120i are encapsulated by the encapsulant
130i, though the upper surfaces of the above electrodes are
exposed. The first electrode extending portion 126i2 of the first
electrode 126i is connected to the first electrode portion 126i1
through the first connection portion 126i3, and the first surface
S1''' of the first electrode extending portion 126i2 is
substantially coplanar with the upper surface 132i of the
encapsulant 130i. Moreover, the second electrode extending portion
128i2 of the second electrode 128i is connected to the second
electrode portion 128i1 through the second connection portion
128i3, and the second surface S2''' of the second electrode
extending portion 128i2 is substantially coplanar with the upper
surface 132i of the encapsulant 130i.
[0086] FIG. 10A is a top view of a light emitting device (LED
package) according to another embodiment of the invention. FIG. 10B
is a cross-sectional view of the light emitting device of FIG. 10A
viewing along a line J-J. Referring to FIG. 10A and FIG. 10B, the
light emitting device (LED package) 100j of the present embodiment
is similar to the light emitting device 100a of FIG. 1A, and
differences therebetween are as follows. In the LED package 100j of
the present embodiment, the first electrode extending portion 126j2
includes a plurality of first sub-electrodes 126j21, 126j22
separated from each other, and the second electrode extending
portion 128j2 includes a plurality of second sub-electrodes 128j21,
128j22 separated from each other. In the present embodiment, the
first sub-electrodes 126j21, 126j22 are located at two adjacent
corners of the encapsulant, and the second sub-electrodes 128j21,
128j22 are located at the other two adjacent corners of the
encapsulant. In other words, the first sub-electrodes 126j21,
126j22 extend from the edge of the first electrode portion 126j1
along a direction away from the second electrode portion 128j1, and
the second sub-electrodes 128j21, 128j22 extend from the edge of
the second electrode portion 128j1 along a direction away from the
first electrode portion 126j1, so that the sub-electrodes 126j21,
126j22, 128j21, 128j22 respectively extend to four corners of the
supper surface of the light emitting device 100j. Moreover, in the
present embodiment, the encapsulant 130j encapsulates the first
electrode portion 126j1 and the second electrode portion 128j1, and
the sub-electrodes 126j21, 126j22, 128j21 and 128j22 extend to
cover the encapsulant 130j. In the present embodiment, the LED
package 100j may further include a light transmissive layer 110,
and the encapsulant 130j is disposed on the light transmissive
layer 110. Compared to FIG. 1B, FIG. 10B only illustrates a
situation that the LED package 100j is turned off to facilitate
flip-chip bonding.
[0087] In the LED package 100j of the present embodiment, since the
sub-electrodes 126j21, 126j22, 128j21, 128j22 configured at the
four corners of the upper surface of the LED package 100j can be
respectively bonded to the circuit board through four solder
pastes, and the four solder pastes configured at the four corners
can disperse a stress in case of reflow. In this way, after the LED
package 100j is bonded to the circuit board and cooled down, the
LED package 100j is avoid to be shifted by an angle relative to a
predetermined position, so as to ensure a yield of the bonding
process.
[0088] FIG. 11A is a top view of an LED package according to
another embodiment of the invention. FIG. 11B is a cross-sectional
view of the LED package of FIG. 11A viewing along a line K-K.
Referring to FIG. 11A and FIG. 11B, the LED package 100k of the
present embodiment is similar to the LED package 100j of FIG. 10A
and
[0089] FIG. 10B, and differences therebetween are as follows. In
the LED package 100k of the present embodiment, the areas that the
first sub-electrodes 126k21, 126k22 of the first electrode
extending portion 126k2 respectively cover the first electrode
portion 126k1 are relatively small, and the first sub-electrodes
126k21, 126k22 respectively cover two adjacent corners of the first
electrode portion 126k1, where the two adjacent corners are
respectively close to the two adjacent corners of the upper surface
of the LED package 100k. Moreover, the areas that the second
sub-electrodes 128k21, 128k22 of the second electrode extending
portion 128k2 respectively cover the second electrode portion 128k1
are relatively small, and the second sub-electrodes 128k21, 128k22
respectively cover two adjacent corners of the second electrode
portion 128k1, where the two adjacent corners are respectively
close to the two adjacent corners of the upper surface of the LED
package 100k.
[0090] FIG. 12A is a top view of an LED package according to
another embodiment of the invention. FIG. 12B is a cross-sectional
view of the LED package of FIG. 12A bonded to a circuit board in a
flip-chip manner and viewing along a line L-L. Referring to FIG.
12A and FIG. 12B, the LED package 1001 of the present embodiment is
similar to the LED package 100k of FIG. 11A and FIG. 11B, and
differences therebetween are as follows. In the LED package 1001 of
the present embodiment, the first sub-electrodes 126121-126128 of
the first electrode extending portion 12612 are grouped into two
first sub-electrode groups 1261a and 1261b, where each of the first
sub-electrode groups 1261a and 1261b respectively includes a part
of the first sub-electrodes. For example, as shown in FIG. 12A, the
first sub-electrode group 1261a includes four first sub-electrodes
126121-126124, and the first sub-electrode group 1261b includes
four first sub-electrodes 126125-126128. Moreover, the second
sub-electrodes 128121-128128 of the second electrode extending
portion 12812 are grouped into two second sub-electrode groups
1281a and 1281b, where each of the second sub-electrode groups
1281a and 1281b respectively includes a part of the second
sub-electrodes. For example, as shown in FIG. 12A, the second
sub-electrode group 1281a includes four second sub-electrodes
128121-128124, and the second sub-electrode group 1281b includes
four second sub-electrodes 128125-128128. In the present
embodiment, the two first sub-electrode groups 1261a and 1261b are
respectively disposed at two adjacent corners on the upper surface
of the LED package 1001, and the two second sub-electrode groups
1281a and 1281b are respectively disposed at the other two adjacent
corners on the upper surface of the LED package 1001.
[0091] The light emitting device 1001 can be bonded to the circuit
board 50 through the flip-chip bonding manner. For example, the two
first sub-electrode groups 1261a, 1261b are respectively bonded to
electrode pads 52 (for example, the electrode pads 52 located to
the left as shown in FIG. 12B) on the circuit board 50 through two
cured solder pastes 60, and the two second sub-electrode groups
1281a, 1281b are respectively bonded to electrode pads 52 (for
example, the electrode pads 52 located to the right as shown in
FIG. 12B) on the circuit board 50 through two cured solder pastes
60. Since the solder pastes 60 can be filled in an interval between
two adjacent sub-electrodes before curing, a bonding force between
the solder pastes 60 and the first sub-electrodes 126121-126128 and
a bonding force between the solder pastes 60 and the second
sub-electrodes 128121-128128 can be effectively enhanced, so as to
improve reliability of the light emitting device 1001 bonded to the
circuit board 50.
[0092] FIG. 13 is a top view of a light emitting device according
to another embodiment of the invention. Referring to FIG. 13, the
light emitting device 100m of the present embodiment is similar to
the light emitting device 100j of FIG. 10A, and differences
therebetween are as follows. In the light emitting device 100m of
the present embodiment, the first sub-electrodes 126m21, 126m23 of
the first electrode extending portion 126m2 are respectively
disposed at two adjacent corners on the upper surface of the light
emitting device 100m, and the first sub-electrode 126m22 is
disposed between the first sub-electrode 126m21 and the first
sub-electrode 126m23. Moreover, the second sub-electrodes 128m21,
128m23 of the second electrode extending portion 128m2 are
respectively disposed at another two adjacent corners on the upper
surface of the light emitting device 100m, and the second
sub-electrode 128m22 is disposed between the second sub-electrode
128m21 and the second sub-electrode 128m23.
[0093] In other embodiments of the invention, the number and
configuration of the first sub-electrodes and the second
sub-electrodes can be modified, which is not limited by the
invention.
[0094] FIG. 14 is a cross-sectional view of a light emitting device
according to another embodiment of the invention. Referring to FIG.
14, the light emitting device 100n of the present embodiment is
similar to the light emitting device 100a of FIG. 1B, and
differences therebetween are as follows. In the present embodiment,
the light emitting device 100n further includes a reflection layer
140n, which is at least disposed on the upper surface 132a of the
encapsulant 130a. In the present embodiment, at least a part of the
reflection layer 140n is disposed between the first electrode 126a
and the upper surface 132a of the encapsulant 130a, and between the
second electrode 128a and the upper surface 132a of the encapsulant
130a. To be specific, the reflection layer 140n can be disposed
between the first electrode extending portion 126a2 and the upper
surface 132a of the encapsulant 130a and between the second
electrode extending portion 128a2 and the upper surface 132a of the
encapsulant 130a. The reflection layer 140a is, for example, gold,
aluminium, silver, nickel, titanium, distributed Bragg reflector
(DBR), a resin layer doped with reflection particles with high
reflectivity (for example, a silicone layer or an epoxy resin
layer) or a combination thereof. The reflection layer 140n can
reflect the light emitted by the light emitting unit 120a to the
light transmissive layer 110, such that the light can effectively
emit out from the light transmissive layer 110. When the reflection
layer 140n is made of an insulation material, the reflection layer
140n can be connected in a whole piece to cover the entire upper
surface 132a of the encapsulant 130a. However, when the reflection
layer 140n is made of a conductive material or a metal material,
the part of the reflection layer 140n disposed under the first
electrode extending portion 126a2 has to be separated from the part
of the reflection layer 140n disposed under the second electrode
extending portion 128a2 to avoid short circuit.
[0095] FIG. 15A is a top view of a light emitting device according
to another embodiment of the invention. FIG. 15B is a
cross-sectional view of the light emitting device of FIG. 15A
viewing along a line M-M. Referring to FIG. 15A and FIG. 15B, the
light emitting device 100p of the present embodiment is similar to
the light emitting device 100f of FIG. 6A and FIG. 6B, and
differences therebetween are as follows. In the light emitting
device 100p of the present embodiment, the first electrode 126p and
the second electrode 128p extend upward from the epitaxial
structure layer 124 to protrude out from the upper surface 132a of
the encapsulant 130a. In the present embodiment, neither the first
electrode 126p nor the second electrode 128p covers the upper
surface 132a of the encapsulant 130a.
[0096] To be specific, the first electrode extending portion 126p2
of the first electrode 126p is disposed on the first electrode
portion 126a1 and protrudes out from the upper surface 132a of the
encapsulant 130a, and the second electrode extending portion 128p2
of the second electrode 128p is disposed on the second electrode
portion 128a1 and protrudes out from the upper surface 132a of the
encapsulant 130a. In the present embodiment, neither the first
electrode extending portion 126p2 nor the second electrode
extending portion 128p2 covers the upper surface 132a of the
encapsulant 130a, and the first electrode extending portion 126p2
and the second electrode extending portion 128p2 are substantially
coplanar. In another embodiment, the first electrode 126p and the
second electrode 128p can also extend upward from the epitaxial
structure layer 124 without protruding out from the upper surface
132a of the encapsulant 130a. For example, the upper surface of the
first electrode extending portion 126p2 (i.e. the surface facing
away from the epitaxial structure layer 124), the upper surface of
the second electrode extending portion 128p2 (i.e. the surface
facing away from the epitaxial structure layer 124) and the upper
surface 132a of the encapsulant 130a are substantially
coplanar.
[0097] In the present embodiment, by increasing heights of the
first electrode 126p and the second electrode 128p through the
first electrode extending portion 126p2 and the second electrode
extending portion 128p2, it avails a follow-up chip bonding
process.
[0098] FIG. 16A is a top view of a light emitting device according
to another embodiment of the invention. FIG. 16B is a
cross-sectional view of the light emitting device viewing along a
line N-N of FIG. 16A. Referring to FIG. 16A and FIG. 16B, the light
emitting device 100q of the present embodiment is similar to the
light emitting device 100p of FIG. 15A and FIG. 15B, and
differences therebetween are as follows. In the light emitting
device 100q of the present embodiment, the first electrode
extending portion extending upward includes a plurality of first
sub-electrodes 126q2 separated from each other, and the second
electrode extending portion extending upward includes a plurality
of second sub-electrodes 128q2 separated from each other.
[0099] FIG. 17A is a top view of a light emitting device according
to another embodiment of the invention. FIG. 17B is a
cross-sectional view of the light emitting device of FIG. 17A
viewing along a line P-P. Referring to FIG. 17A and FIG. 17B, the
light emitting device 100r of the present embodiment is similar to
the light emitting device 100q of FIG. 16A and FIG. 16B, and a main
difference therebetween is that the first sub-electrodes 126q2 and
the second sub-electrodes 128q2 of the light emitting device 100q
are laminar electrodes, and the first sub-electrodes 126r2 and the
second sub-electrodes 128r2 of the light emitting device 100r of
the present embodiment are spherical electrodes, which can be
formed according to a ball planting technique.
[0100] FIG. 18A is a cross-sectional view of a light emitting
device of FIG. 1B bonded to a circuit board through a flip-chip
bonding manner FIG. 18B is a partial enlarged view of a region M1
in FIG. 18A. Referring to FIG. 18A and FIG. 18B, the light emitting
device 100a can be bonded to the circuit board 50 through the
flip-chip bonding manner. For example, the first electrode
extending portion 126a2 and the second electrode extending portion
128a2 are respectively bonded to the two electrode pads 52 on the
circuit board 50 through two cured solder pastes 60.
[0101] In the present embodiment, the first electrode extending
portion 126a2 and the second electrode extending portion 128a2
respectively include an adhesion layer L1 and a barrier layer L2
disposed between the adhesion layer L1 and the encapsulant 130a. A
material of the adhesion layer L1 includes gold, tin, aluminium,
silver, copper, indium, bismuth, platinum, gold-tin alloy,
tin-silver alloy, tin-silver-copper alloy (Sn--Ag--Cu (SAC) alloy)
or a combination thereof, and a material of the barrier layer L2
includes nickel, titanium, tungsten, gold or an alloy of a
combination thereof The adhesion layer L1 is easy to be bonded with
the solder pastes 60, and the barrier layer L2 can effectively
prevent the material of the solder pastes 60 from invading the
encapsulant 130a to contaminate the light emitting device 100a
during the bonding process.
[0102] In the present embodiment, the first electrode extending
portion 126a2 and the second electrode extending portion 128a2
further respectively include a reflection layer L3, which is at
least disposed between the barrier layer L2 and the encapsulant
130a. The reflection layer L3 can reflect the light coming from the
epitaxial structure layer 124 to improve a light usage rate. In the
present embodiment, a material of the reflection layer L3 includes
gold, aluminium, silver, nickel, titanium or an alloy of a
combination thereof.
[0103] In summary, the first electrode and the second electrode of
the light emitting unit according to the embodiment of the
invention extend outward from the epitaxial structure layer to
cover the encapsulant, namely, the light emitting device of the
invention has a larger electrode area, so that when the light
emitting device is to be assembled to an external circuit, the
alignment accuracy of assembling is effectively improved. Since the
first electrode and the second electrode of the light emitting unit
according to the embodiment of the invention extend upward from the
epitaxial structure layer, and protrude out of the encapsulant, it
avails a follow-up chip bonding process.
[0104] It will be apparent to those skilled in the art that various
modifications and variations can be made to the structure of the
invention without departing from the scope or spirit of the
invention. In view of the foregoing, it is intended that the
invention cover modifications and variations of this invention
provided they fall within the scope of the following claims and
their equivalents.
* * * * *