U.S. patent application number 14/670237 was filed with the patent office on 2015-10-01 for power semiconductor device.
The applicant listed for this patent is Semikron Elektronik GmbH & Co., KG. Invention is credited to Ingo BOGEN.
Application Number | 20150282339 14/670237 |
Document ID | / |
Family ID | 54066459 |
Filed Date | 2015-10-01 |
United States Patent
Application |
20150282339 |
Kind Code |
A1 |
BOGEN; Ingo |
October 1, 2015 |
POWER SEMICONDUCTOR DEVICE
Abstract
A power semiconductor device comprising: a body, a substrate and
power semiconductor components arranged on and connected to the
substrate. The device has electrically conductive load connection
elements and an integrally formed housing which runs laterally
around the components. The body has a main outer surface which runs
laterally around the components and which is at least partially
covered by an elastic, electrically nonconductive, integrally
formed, structured sealing element which runs laterally around the
components. A section of the sealing element is arranged between
the housing and the main outer surface of the body. The housing and
the main outer surface of the body are pressed against the sealing
element, which seals off the housing from the main outer surface of
the body. The invention provides a compact device whose load
connection elements are reliably electrically insulated from the
body and whose housing is reliably sealed off from the body.
Inventors: |
BOGEN; Ingo; (Nurnberg,
DE) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Semikron Elektronik GmbH & Co., KG |
Nurnberg |
|
DE |
|
|
Family ID: |
54066459 |
Appl. No.: |
14/670237 |
Filed: |
March 26, 2015 |
Current U.S.
Class: |
361/752 |
Current CPC
Class: |
H05K 5/0056 20130101;
H05K 5/0008 20130101; H05K 1/0203 20130101; H05K 1/181 20130101;
H05K 7/1432 20130101 |
International
Class: |
H05K 5/00 20060101
H05K005/00; H05K 1/18 20060101 H05K001/18; H05K 1/02 20060101
H05K001/02 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 26, 2014 |
DE |
10 2014 104 194.1 |
Claims
1. A power semiconductor device, comprising: a metallic basic body;
a substrate connected to said metallic basic body; power
semiconductor components arranged on and connected to said
substrate; electrically conductive load connection elements for
making electrical contact with power semiconductor device; and an
integrally formed first housing part, which runs laterally around
said power semiconductor components; wherein said metallic basic
body has a first main outer surface, which runs laterally around
said power semiconductor components and is covered areally, at
least partially, by an elastic, electrically nonconductive,
integrally formed, structured first sealing element, which runs
laterally around power semiconductor components; wherein a section
of said first sealing element is arranged between said first
housing part and said first main outer surface of said metallic
basic body; and wherein said first housing part and said first main
outer surface of said metallic basic body are arranged pressed
against said first sealing element, and said first sealing element
seals off said first housing part from said first main outer
surface of said metallic basic body.
2. The power semiconductor device of claim 1, wherein at least
about 50% of said first main outer surface is covered areally by
said first sealing element.
3. The power semiconductor device of claim 1 wherein said
electrically conductive load connection elements pass through said
first housing part in the lateral direction towards the outside of
said first housing part; wherein said load connection elements each
have an outer connection section arranged outside said first
housing part; wherein said metallic basic body has a lateral
secondary outer surface; and wherein said first sealing element
covers said lateral secondary outer surface of said metallic basic
body at least in the region of said respective outer connection
section.
4. The power semiconductor device of claim 1, wherein said metallic
basic body is in the form of one of the group consisting of: an
air-type heat sink, a liquid-type heat sink and a baseplate, which
is configured for connection to one of an air-type or liquid-type
heat sink.
5. The power semiconductor device of claim 1, wherein said first
sealing element is neither cohesively connected to said metallic
basic body nor cohesively connected to said first housing part.
6. The power semiconductor device of claim 1, wherein said first
sealing element is an elastomer.
7. The power semiconductor device of claim 1 wherein said first
sealing element has a thickened portion which runs laterally around
said power semiconductor components; wherein said thickened portion
of said sealing element is arranged between said first housing part
and said first main outer surface of said metallic basic body; and
wherein said thickened portion of said first sealing element seals
off said first housing part from said first main outer surface of
said metallic basic body.
8. The power semiconductor device of claim 1 wherein said first
housing part is connected to said metallic basic body by at least
one screw connection; and wherein said first housing part and said
first main outer surface of said metallic basic body are arranged
pressed against said first sealing element by said at least one
screw connection pressing said first housing part and said metallic
basic body towards one another.
9. A power semiconductor system, comprising: a first power
semiconductor device having a first metallic basic body; a first
substrate connected to said first metallic basic body; a plurality
of first power semiconductor components arranged on and connected
to said first substrate; a plurality of first electrically
conductive load connection elements for making electrical contact
with said first power semiconductor device; and a first integrally
formed first housing part, which runs laterally around said first
power semiconductor components; wherein said first metallic basic
body has a first main outer surface, which runs laterally around
said first power semiconductor components and is covered areally,
at least partially, by a first elastic, electrically nonconductive,
integrally formed, structured first sealing element, which runs
laterally around said power semiconductor components; wherein a
first section of said first sealing element is arranged between
said first housing part and said first main outer surface of said
first metallic basic body; and wherein said first housing part and
said first main outer surface of said first metallic basic body are
arranged pressed against said first sealing element, and said first
sealing element seals off said first housing part from said first
main outer surface of said first metallic basic body; and a second
power semiconductor device having a second metallic basic body; a
second substrate connected to said second metallic basic body; a
plurality of second power semiconductor components arranged on and
connected to said second substrate; a plurality of second
electrically conductive load connection elements for making
electrical contact with said second power semiconductor device; and
a second integrally formed second housing part, which runs
laterally around said second power semiconductor components;
wherein said second metallic basic body includes a first main outer
surface, which runs laterally around said second power
semiconductor components and is covered areally, at least
partially, by an elastic, electrically nonconductive, integrally
formed, structured first sealing element, which runs laterally
around said power semiconductor components; a second main outer
surface, which is arranged opposite said first main outer surface
of said second metallic basic body of said second power
semiconductor device; a second sealing element arranged between
said second main outer surface of said second metallic basic body
of said second power semiconductor device and said first housing
part of said first power semiconductor device, said second sealing
element also sealing off said second main outer surface of said
second metallic basic body of said second power semiconductor
device from said first housing part of said first power
semiconductor device; wherein a second section of said second
sealing element is arranged between said second housing part and
said second main outer surface of said second metallic basic body;
and wherein said second housing part and said second main outer
surface of said second metallic basic body are arranged pressed
against said second sealing element, and said second sealing
element seals off said second housing part from said second main
outer surface of said second metallic basic body.
10. The power semiconductor system of claim 9, wherein said second
sealing element is in the form of a sealing ring.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The invention relates to power semiconductor devices.
[0003] 2. Description of the Related Art
[0004] Generally, known power semiconductor devices, such as, for
example, power semiconductor switches and diodes, are arranged on a
substrate and electrically conductively connected to one another by
a conductor layer of the substrate, and bonding wires and/or a film
composite. The power semiconductor switches in this case generally
are in the form of transistors, such as, for example, IGBTs
(insulated-gate bipolar transistors) or MOSFETs (metal-oxide
semiconductor field-effect transistors) or in the form of
thyristors. The substrate is generally connected directly or
indirectly to a metallic basic body, which is generally in the form
of a heat sink or a baseplate, which is intended for connection to
a heat sink.
[0005] Such power semiconductor components are often electrically
interconnected to form one or more so-called half-bridge circuits,
which are used, for example, for rectifying and inverting electric
voltages and currents.
[0006] Such known power semiconductor devices have load connection
elements for guiding load currents, with the aid of which load
connection elements the power semiconductor devices are
electrically conductively connected to external components. These
load currents generally have, in contrast to control currents which
are used for actuating the power semiconductor switches, for
example, a high current intensity. The load connection elements
generally need to be passed through the housing of the power
semiconductor device. In this case, power semiconductor devices
often need to be protected from spraywater, for example, so that
firstly the load connection elements need to be sealed off from the
housing of the power semiconductor device and secondly the housing
of the power semiconductor device must be sealed off from the
metallic basic body of the power semiconductor device.
[0007] Since the load connection elements generally have a
different electrical potential than the basic body of the power
semiconductor device, sufficiently long electrical leakage parts
and air gaps between the load connection elements and the basic
body of the power semiconductor device need to be provided in order
to ensure sufficient electrical insulation. This requirement runs
counter to the general technical requirement of making power
semiconductor devices compact.
SUMMARY OF THE INVENTION
[0008] It is therefore an object of the invention to provide an
improved compact power semiconductor device whose load connection
elements are electrically insulated reliably from the basic body of
the power semiconductor device and whose housing is sealed off
reliably from the basic body.
[0009] This object is achieved by a power semiconductor device
comprising: a substrate and power semiconductor components arranged
on and connected to the substrate, wherein the substrate is
connected directly or indirectly to a metallic basic body, wherein
the power semiconductor device has electrically conductive load
connection elements for making electrical contact with the power
semiconductor device, wherein the power semiconductor device has an
integrally formed first housing part, which runs laterally around
the power semiconductor components, wherein the basic body has a
first main outer surface, which runs laterally around the power
semiconductor components and is covered areally, at least
partially, by an elastic, electrically nonconductive, integrally
formed, structured first sealing element, which runs laterally
around the power semiconductor components, wherein a section of the
first sealing element is arranged between the first housing part
and the first main outer surface of the basic body, wherein the
first housing part and the first main outer surface of the basic
body are arranged pressed against the first sealing element, and
the first sealing element seals off the first housing part from the
first main outer surface of the basic body.
[0010] It has proven to be advantageous if at least the majority of
the first main outer surface is covered areally by the first
sealing element since this provides particularly reliable
electrical insulation of the load connection elements from the
basic body of the power semiconductor device.
[0011] Furthermore, it has also proven to be advantageous if the
electrically conductive load connection elements pass through the
first housing part in the lateral direction towards the outside,
wherein the load connection elements each have an outer connection
section arranged outside the first housing part, wherein the basic
body has a lateral secondary outer surface, wherein the first
sealing element covers the lateral secondary outer surface of the
basic body at least in the region of the respective outer
connection section. As a result, reliable electrical insulation of
the load connection elements from the basic body of the power
semiconductor device is also achieved outside the first housing
part.
[0012] In addition, it has proven to be advantageous if the basic
body is in the form of an air-type or liquid-type heat sink or in
the form of a baseplate, which is intended for connection to an
air-type or liquid-type heat sink. The mentioned designs of the
basic body are conventional designs.
[0013] Furthermore, it has proven to be advantageous if the first
sealing element is neither cohesively connected to the basic body
nor cohesively connected to the first housing part. The first
sealing element can therefore be replaced easily in the event of a
fault.
[0014] Additionally, it has proven to be advantageous if the first
sealing element consists of an elastomer since in this case the
first sealing element has a particularly long life.
[0015] Furthermore, it has proven to be advantageous if the first
sealing element has a thickened portion which runs laterally around
the power semiconductor components, wherein the thickened portion
of the sealing element is arranged between the first housing part
and the first main outer surface of the basic body, wherein the
thickened portion of the first sealing element seals off the first
housing part from the first main outer surface of the basic body.
As a result, particularly reliable sealing-off of the first housing
part from the basic body is achieved.
[0016] Furthermore, it has proven to be advantageous if the first
housing part is connected to the basic body by one or more screw
connections, wherein the first housing part and the first main
outer surface of the basic body are pressed against the first
sealing element by the screw connections pressing the first housing
part and the basic body together. By the screw connections, firstly
the first housing part is connected to the basic body and secondly
the first housing part and the basic body are pushed towards one
another by the screw connections.
[0017] Furthermore, it has proven successful to use a power
semiconductor device system comprising first and a second power
semiconductor devices, according to the invention, wherein the
basic body of the second power semiconductor device has a second
main outer surface, which is arranged opposite the first main outer
surface of the basic body of the second power semiconductor device,
wherein a second sealing element is arranged between the second
main outer surface of the basic body of the second power
semiconductor device and the first housing part of the first power
semiconductor device and seals off the second main outer surface of
the basic body of the second power semiconductor device from the
first housing part of the first power semiconductor device. As a
result, a particularly compact power semiconductor device system is
provided.
[0018] In addition, it has proven to be advantageous if the second
sealing element is in the form of a sealing ring. A design of the
second sealing element as a sealing ring is a particularly simple
design for sealing.
[0019] Other objects and features of the present invention will
become apparent from the following detailed description considered
in conjunction with the accompanying drawings. It is to be
understood, however, that the drawings are designed solely for
purposes of illustration and not as a definition of the limits of
the invention, for which reference should be made to the appended
claims. It should be further understood that the drawings are not
necessarily drawn to scale and that, unless otherwise indicated,
they are merely intended to conceptually illustrate the structures
and procedures described herein.
BRIEF DESCRIPTION OF THE DRAWINGS
[0020] In the drawings:
[0021] FIG. 1 shows a perspective sectional illustration of a power
semiconductor device according to the invention;
[0022] FIG. 2 shows a perspective illustration of an as yet
incompletely produced power semiconductor device according to the
invention without the first sealing element;
[0023] FIG. 3 shows a first sealing element;
[0024] FIG. 4 shows a perspective illustration of an as yet not
completely produced power semiconductor device according to the
invention having a first sealing element positioned on a basic body
of the power semiconductor device;
[0025] FIG. 5 shows a perspective illustration of a power
semiconductor device according to the invention; and
[0026] FIG. 6 shows a perspective illustration of a power
semiconductor device system according to the invention.
DETAILED DESCRIPTION OF THE PRESENTLY PREFERRED EMBODIMENTS
[0027] FIG. 1 shows a perspective sectional illustration of a power
semiconductor device 1 according to the invention. Power
semiconductor device 1 has a substrate 20, on which power
semiconductor components 23 are arranged and connected to substrate
20. Each respective power semiconductor component 23 is preferably
in the form of a power semiconductor switch or diode. The power
semiconductor switches are in this case generally in the form of
transistors, such as, for example, IGBTs (insulated-gate bipolar
transistors) or MOSFETs (metal-oxide semiconductor field-effect
transistors) or in the form of thyristors. Substrate 20 has an
insulating body 21 (for example made of a ceramic) and an
electrically conductive structured first conducting layer, which is
arranged on a first side of insulating body 21 and is connected to
insulating body 21 and which forms conductor tracks 22 owing to its
structure, within the scope of the exemplary embodiment.
Preferably, substrate 20 has an electrically conductive, preferably
unstructured second conducting layer, wherein insulating body 21 is
arranged between the structured first conducting layer and the
second conducting layer. Substrate 20, as in the exemplary
embodiment, can be in the form of a direct copper bonded substrate
(DCB substrate) or in the form of an insulated metal substrate
(IMS), for example. The conductor tracks of the substrate can also
be formed, for example, by electrically conductive leadframes,
which are arranged on an insulating body, such as, for example, an
electrically nonconductive film. The leadframes and the
electrically nonconductive film to such an extent form a substrate.
Power semiconductor components 23 are preferably connected to
conductor tracks 22 cohesively (for example by a soldered or
sintered layer). In FIG. 1, for reasons of clarity, the soldered
layer which cohesively connects power semiconductor components 23
to conductor tracks 22 is not illustrated. As an alternative or in
addition, power semiconductor components 23 can be connected to
conductor tracks 22, for example, by a pressure connection, by, for
example, a pressure being exerted on power semiconductor components
23 in the direction of conductor tracks 22.
[0028] It will be mentioned that power semiconductor components 23
are electrically conductively connected to one another on their
side remote from substrate 20 by, for example, bonding wires and/or
a film composite and to conductor tracks 22 of substrate 20,
corresponding to the desired electrical circuit, which is intended
to implement power semiconductor device 1. For reasons of clarity,
these electrical connections are not shown in FIG. 1.
[0029] Substrate 20 is connected directly or indirectly to a
metallic basic body 3. Within the scope of the exemplary
embodiment, metallic basic body 3 has a frame element 3a running
around power semiconductor components 23 and a bottom element 3b,
which is connected cohesively (for example by a welded connection)
to frame element 3a. Metallic basic body 3, within the scope of the
exemplary embodiment, is in the form of a liquid-type heat sink.
Metallic basic body 3 could also be in the form of an air-type heat
sink, for example, which preferably has cooling fins and/or cooling
pins, or in the form of a baseplate, which is intended for
connection to an air-type or liquid-type heat sink. Metallic basic
body 3 within the scope of the exemplary embodiment forms a channel
27, through which a cooling liquid (for example water) flows. The
cooling liquid enters or leaves the channel 27 via openings 18 (see
FIG. 2). Within the scope of the exemplary embodiment, substrate 20
is arranged on a cooling plate 25 provided with cooling pins 26,
which protrude into channel 27, and is connected to cooling plate
25. Cooling plate 25 forms a cover for an opening 45 of metallic
basic body 3 and is connected to metallic basic body 3. Substrate
20 is connected to metallic basic body 3 via cooling plate 25 and
therefore indirectly. Alternatively, substrate 20 could also be
connected directly to metallic basic body 3 by, for example,
substrate 20 being arranged on metallic basic body 3 and being
connected to metallic basic body 3.
[0030] The direct or indirect connection of substrate 20 to
metallic basic body 3 can be cohesive, for example (for example by
a single or a plurality of soldered or sintered layers). As an
alternative or in addition, the direct or indirect connection of
substrate 20 to metallic basic body 3 can take place, for example,
by a pressure connection by, for example, a pressure being exerted
on substrate in the direction of metallic basic body 3. However,
other connection types are of course also possible, and would be
known and appreciated by one of ordinary skill in the art.
[0031] Furthermore, power semiconductor device 1 has an integrally
formed first housing part 5 which runs laterally around power
semiconductor components 23. It will be mentioned here that first
housing part 5 does not necessarily run laterally around power
semiconductor components 23 on the same plane on which power
semiconductor components 23 are arranged, but can also run
laterally around power semiconductor components 23 slightly above
power semiconductor components 23. First housing part 5 is
preferably made of plastic.
[0032] In order to make electrical contact between power
semiconductor device 1 and the external electrical line devices,
such as, for example, electrically conductive rails or cables,
power semiconductor device 1 has electrically conductive load
connection elements 7. Load connection elements 7 are used for
conducting load currents. The load currents which flow through load
connection elements 7 in this case generally have a high current
intensity in comparison with control currents which are used, for
example, for actuating power semiconductor components when power
semiconductor components are in the form of power semiconductor
switches. Load connection elements 7 each have an outer connection
section 7a arranged outside first housing part 5 and an inner
connection section 7b arranged within first housing part 5 of power
semiconductor device 1. Furthermore, power semiconductor device 1
has electrically conductive connecting elements 6, which connect
substrate 20, more precisely the first conducting layer of
substrate 20, to the electrically conductive load connection
elements 7. Load connection elements 7 can also be formed
integrally with the respectively associated connecting elements
6.
[0033] Metallic basic body 3 has a first main outer surface 4,
which runs laterally around power semiconductor components 23 and
which is covered areally, at least partially, by an elastic,
electrically nonconductive, integrally formed, structured first
sealing element 11 which runs laterally around power semiconductor
components 23 (see also FIGS. 2-4). It will be mentioned here that
first sealing element 11 does not necessarily run laterally around
power semiconductor components 23 on the same plane on which power
semiconductor components 23 are arranged, but can also run
laterally around power semiconductor components 23 slightly below
or above power semiconductor components 23. A section 53 of first
sealing element 11 is arranged between first housing part 5 and
first main outer surface 4 of metallic basic body 3. A further
section 54 of first sealing element 11 is not arranged between
first housing part 5 and first main outer surface 4 of metallic
basic body 3, but is arranged in the interior of first housing part
5. First main outer surface 4 preferably extends on one plane, and
can have a plurality of main outer surface sections 4a and 4b,
which are separated from one another by at least one groove 35 in
metallic basic body 3, for example. First sealing element 11
preferably covers the at least one groove 35 of metallic basic body
3.
[0034] First sealing element 11 preferably consists of an
elastomer, such as, for example, silicone or an
ethylene-propylene-diene-rubber. The silicone is preferably in the
form of a crosslinked liquid silicone rubber or in the form of a
crosslinked solid silicone rubber.
[0035] First sealing element 11 is preferably neither cohesively
connected to metallic basic body 3 nor cohesively connected to
first housing part 5 and to such an extent is preferably in the
form of an individual part which is removable from metallic basic
body 3. Alternatively, first sealing element 11 can be cohesively
connected to metallic basic body 3. First sealing element 11 is
structured and preferably has, owing to its structure, one or more
cutouts 14 or 37. The inner walls of cutouts 14 run around power
semiconductor components 23. Furthermore, first sealing element 11
preferably has structure elements 15 protruding from a main surface
12 of first sealing element 11 (see FIG. 3).
[0036] First sealing element 11 preferably covers the majority
(i.e., more than about 50%) of first main outer surface 4 of
metallic basic body 3 and can also completely cover in particular
first main outer surface 4 of metallic basic body 3.
[0037] First housing part 5 and first main outer surface 4 of
metallic basic body 3 are arranged pressed against first sealing
element 11, with the result that first sealing element 11 seals off
first housing part 5 from first main outer surface 4 of metallic
basic body 3.
[0038] First sealing element 11 therefore has a dual function in
accordance with the invention. Firstly, first sealing element 11
reliably seals off first housing part 5 from metallic basic body 3
so that the housing of power semiconductor device 1 is sealed off
reliably from metallic basic body 3 of power semiconductor device
1, and secondly first sealing element 11 within first housing part
5 extends electrical leakage parts and air gaps between load
connection elements 7 and metallic basic body 3 of power
semiconductor device 1, with the result that power semiconductor
device 1 can have a compact design since the physical size of power
semiconductor device 1 can be reduced and nevertheless the
electrical leakage paths and air gaps required for reliable
electrical insulation can be realized.
[0039] Preferably, first housing part 5 is connected to metallic
basic body 3 by screw connections, wherein first housing part 5 and
first main outer surface 4 of metallic basic body 3 are arranged
pressed against first sealing element 11 within the scope of the
exemplary embodiment by the screw connections pressing first
housing part 5 and metallic basic body 3 towards one another. In
order to realize the screw connections, within the scope of the
exemplary embodiment, metallic basic body 3 preferably has holes 46
arranged in elevations 19 and provided with an internal thread (see
FIG. 2), and first housing part 5 has depressions 32 with a
respective hole provided in the bottom of said depressions, through
which depressions the shafts of screws 47 are passed and screwed
into the internal thread of holes 46. It will be mentioned that,
for reasons of clarity, only one screw 47 is illustrated in FIG. 1.
Structure elements 15 of first sealing element 11 preferably
surround elevations 19. Elevations 19 are preferably in the form of
truncated cones.
[0040] Preferably, first sealing element 11 has a thickened portion
16, which runs laterally around power semiconductor components 23,
wherein thickened portion 16 of first sealing element 11 is
arranged between first housing part 5 and first main outer surface
4 of metallic basic body 3, wherein thickened portion 16 of first
sealing element 11 seals off first housing part 5 particularly
reliably from first main outer surface 4 of metallic basic body 3.
Thickened portion 16 preferably forms a first bulge formed in the
direction of first housing part 5 and/or a second bulge formed in
the direction of metallic basic body 3.
[0041] Within the scope of the exemplary embodiment, electrically
conductive load connection elements 7 extend outwards through first
housing part 5 in the lateral direction, wherein load connection
elements 7 each have an outer connection section 7a, which is
arranged outside first housing part 5, wherein metallic basic body
3 has a lateral secondary outer surface 10 (see FIG. 2), wherein
first sealing element 11 covers lateral secondary outer surface 10
of metallic basic body 3 at least in the region 48 of the
respective outer connection section 7a. The respective outer
connection section 7a is preferably arranged on a lateral outer
side of first housing part 5. For reasons of clarity, only one
region 48 is illustrated in FIG. 1. Load connection elements 7
preferably extend through cutouts 17 in first housing part 5,
wherein seals 50 are arranged between load connection elements 7
and first housing part 5 for sealing purposes, said seals closing
cutouts 17. Preferably, first sealing element 11 covers the
majority (i.e., at least about 50%) and in particular all of
lateral secondary outer surface 10 of metallic basic body 3.
Lateral secondary outer surface 10 preferably extends perpendicular
to first main outer surface 4 of metallic basic body 3. By this
measure, first sealing element 11 also extends electrical leakage
paths and air gaps between load connection elements 7 and metallic
basic body 3 of power semiconductor device 1 outside first housing
part 5, with the result that power semiconductor device 1 can be
particularly compact since the physical size of power semiconductor
device 1 can be reduced and nevertheless the electrical leakage
path and air gaps required for reliable electrical insulation can
still be realized.
[0042] FIG. 2 shows a perspective illustration of an as yet
incompletely produced power semiconductor device 1 according to the
invention without a first sealing element 11, which is illustrated
in FIG. 3. Within the scope of the exemplary embodiment, power
semiconductor device 1 has power semiconductor modules 9, which
each have, in the interior of their power semiconductor module
housing 51, substrate 20 illustrated by way of example in FIG. 1
and power semiconductor components 23. The respective power
semiconductor module 9 has control connection elements 12, which
are used for actuating those power semiconductor components 23
which are in the form of power semiconductor switches in the
exemplary embodiment. Furthermore, power semiconductor device 1 has
driver circuits, preferably for actuating the power semiconductor
switches, said driver circuits being arranged on a printed circuit
board 24. It will be mentioned that, within the scope of the
exemplary embodiment, a DC voltage is inverted into a three-phase
AC voltage or a three-phase AC voltage is rectified into a DC
voltage by power semiconductor device 1 and the three power
semiconductor modules 9, respectively.
[0043] In a first mounting step, first sealing element 11
illustrated by way of example in FIG. 3 is positioned on first main
outer surface 4 of metallic basic body 3 so that the arrangement
illustrated in FIG. 4 is produced. In the exemplary embodiment,
first sealing element 11 covers the majority (i.e., more than about
50%) of first main outer surface 4 of metallic basic body 3. In the
exemplary embodiment, relatively small main outer surface sections
4a of first main outer surface 4 in whose direct vicinity
preferably no load connection elements 7 are arranged remain
uncovered by first sealing element 11.
[0044] Then, first housing part 5 is arranged on first sealing
element 11 and is connected to metallic basic body 3 by screw
connections, wherein, to such an extent, first housing part 5 and
first main outer surface 4 of metallic basic body 3 are arranged
pressed against first sealing element 11 once they have been
screwed together. FIG. 5 shows a perspective illustration of the
completely mounted power semiconductor device 1 according to the
invention.
[0045] As illustrated by way of example in FIG. 1 and FIG. 5, a
second sealing element 28, preferably in the form of a sealing
ring, is preferably arranged on that side 52 of first housing part
5 which is remote from first main outer surface 4 of metallic basic
body 3. Second sealing element 28 provides sealing with respect to
a second housing part, which is preferably in the form of, or acts
as, a cover for first housing part 5. Second sealing element 28 or
the sealing ring can be in the form of, for example, an individual
part which is removable from the remote side 52 of first housing
part 5 or an element which is cohesively connected to the remote
side 52 of first housing part 5. Second sealing element 28 or the
sealing ring can be foamed, for example, onto the remote side 52 of
first housing part 5. The cover closes power semiconductor device 1
at the top. It will be mentioned here that the second housing part
can also be formed integrally with first housing part 5, with the
result that the housing of power semiconductor device 1 according
to the invention can also only consist of first housing part 5.
Furthermore, it will be mentioned that the housing of power
semiconductor device 1 can also have more than two housing
parts.
[0046] It is particularly advantageous if, as described below, a
plurality of power semiconductor devices according to the invention
are arranged next to one another in a row to form a power
semiconductor device system and the basic body of one power
semiconductor device forms the cover for the first housing part of
the directly adjacent power semiconductor device.
[0047] FIG. 6 shows, by way of example, a power semiconductor
device system 30 comprising a first power semiconductor device 1
according to the invention and a second power semiconductor device
1' also according to the invention. Metallic basic body 3' of the
second power semiconductor device 1' has a second main outer
surface 31', which is arranged opposite first main outer surface 4'
of metallic basic body 3' of second power semiconductor device 1',
wherein a second sealing element 28 is arranged between second main
outer surface 31' of metallic basic body 3' of second power
semiconductor device 1' and first housing part 5 of first power
semiconductor device 1, which second sealing element 28 seals off
second main outer surface 31' of metallic basic body 3' of second
power semiconductor device 1' from first housing part 5 of first
power semiconductor device 1.
[0048] Power semiconductor device system 30 can of course also have
further power semiconductor devices according to the invention
which are arranged next to one another in a similar way to first
and second power semiconductor devices 1 and 1'.
[0049] It will be mentioned at this juncture that features of
various exemplary embodiments of the invention, so long as the
features are not mutually exclusive, can of course be combined with
one another as desired.
[0050] In the preceding Detailed Description, reference was made to
the accompanying drawings, which form a part of his disclosure, and
in which are shown illustrative specific embodiments of the
invention. In this regard, directional terminology, such as "top",
"bottom", "left", "right", "front", "back", etc., is used with
reference to the orientation of the Figure(s) with which such terms
are used. Because components of embodiments can be positioned in a
number of different orientations, the directional terminology is
used for purposes of ease of understanding and illustration only
and is not to be considered limiting.
[0051] Additionally, while there have been shown and described and
pointed out fundamental novel features of the invention as applied
to a preferred embodiment thereof, it will be understood that
various omissions and substitutions and changes in the form and
details of the devices illustrated, and in their operation, may be
made by those skilled in the art without departing from the spirit
of the invention. For example, it is expressly intended that all
combinations of those elements and/or method steps which perform
substantially the same function in substantially the same way to
achieve the same results are within the scope of the invention.
Moreover, it should be recognized that structures and/or elements
and/or method steps shown and/or described in connection with any
disclosed form or embodiment of the invention may be incorporated
in any other disclosed or described or suggested form or embodiment
as a general matter of design choice. It is the intention,
therefore, to be limited only as indicated by the scope of the
claims appended hereto.
* * * * *