U.S. patent application number 14/733926 was filed with the patent office on 2015-09-24 for methods of forming buried electromechanical structures coupled with device substrates and structures formed thereby.
The applicant listed for this patent is Rajashree Baskaran. Invention is credited to Rajashree Baskaran.
Application Number | 20150266725 14/733926 |
Document ID | / |
Family ID | 51523765 |
Filed Date | 2015-09-24 |
United States Patent
Application |
20150266725 |
Kind Code |
A1 |
Baskaran; Rajashree |
September 24, 2015 |
METHODS OF FORMING BURIED ELECTROMECHANICAL STRUCTURES COUPLED WITH
DEVICE SUBSTRATES AND STRUCTURES FORMED THEREBY
Abstract
Methods of forming integrated MEMS structures are described.
Those methods and structures may include forming at least one MEMS
structure on a first substrate, forming a first bonding layer on a
top surface of the first substrate, and then coupling the first
bonding layer disposed on the first substrate to a second
substrate, wherein the second substrate comprises a device layer.
The bonding may comprise a layer transfer process, wherein an
integrated MEMS device is formed.
Inventors: |
Baskaran; Rajashree;
(Seattle, WA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Baskaran; Rajashree |
Seattle |
WA |
US |
|
|
Family ID: |
51523765 |
Appl. No.: |
14/733926 |
Filed: |
June 8, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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13798600 |
Mar 13, 2013 |
9061890 |
|
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14733926 |
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Current U.S.
Class: |
438/50 |
Current CPC
Class: |
B81B 2201/0235 20130101;
H01L 2224/16 20130101; B81C 1/00238 20130101; H01L 23/315 20130101;
B81C 2203/036 20130101; H01L 2924/0002 20130101; B81B 7/02
20130101; B81B 2201/0271 20130101; B81C 2203/0136 20130101; B81C
2203/035 20130101; B81B 2201/0242 20130101; B81B 2207/012 20130101;
B81C 1/00015 20130101; B81C 2203/0792 20130101; H01L 2924/00
20130101; B81C 2203/0118 20130101; H01L 2924/0002 20130101; H01L
2924/00 20130101 |
International
Class: |
B81C 1/00 20060101
B81C001/00 |
Claims
1. A method of forming a structure comprising: forming at least one
MEMS structure on a first substrate; forming a first bonding layer
on a top surface of the first substrate; and coupling the first
bonding layer disposed on the first substrate to a second
substrate, wherein the coupling is achieved utilizing a layer
transfer process, to form an integrated MEMS structure.
2. The method of claim 1 further comprising wherein the at least
one MEMS structure comprises at least one of a resonator, an
actuator, a gyroscope, a sensor, an accelerometer, a compass, a
moving element.
3. The method of claim 1 further comprising wherein the first
substrate comprises a single crystal silicon substrate.
4. The method of claim 1 further comprising wherein the first
substrate is hermetically sealed utilizing a process above about
1000 degrees Celsius.
5. The method of claim 4 further comprising wherein the first
substrate is sealed utilizing an epitaxial silicon process, wherein
the epitaxial silicon is disposed over substantially the entire top
surface of an upper portion of the first substrate.
6. The method of claim 1 further comprising wherein the second
substrate comprises a device layer.
7. The method of claim 1 further comprising wherein the first
bonding layer comprises one of a metal and an oxide layer.
8. The method of claim 1 further comprising wherein the second
substrate comprises a high voltage IC.
9. The method of claim 1 further comprising wherein the second
substrate comprises one of a CMOS and an RF device.
10. The method of claim 1 further comprising wherein the first
substrate is bonded to the second substrate by utilizing at least
one of an oxide to oxide and a metal to metal layer transfer
process.
11. The method of claim 1 further comprising wherein the second
substrate comprises a second bonding layer disposed on
substantially an entire top surface of the second substrate.
12. A method of forming a structure comprising: forming a moveable
and a fixed structure in a first substrate; forming a sacrificial
conformal material around the fixed structure and on a top surface
of the first substrate; forming openings in the sacrificial
material disposed on the top surface of the first substrate;
forming a high temperature material in the openings; forming a
first bonding layer on the high temperature material; and layer
transferring the first substrate onto a second substrate, wherein
the second substrate comprises a device layer.
13. The method of claim 12 further comprising wherein the moveable
and fixed structures comprise portions of a MEMS device.
14. The method of claim 12 further comprising wherein the layer
transfer comprises an oxide to oxide layer transfer process.
15. The method of claim 12 further comprising wherein the high
temperature material comprises an epitaxially grown material.
16. The method of claim 12 further comprising wherein the first
substrate comprises a silicon on insulator substrate.
17. The method of claim 12 further comprising wherein the second
substrate comprises a device substrate comprising a second bonding
layer on a top surface.
18. The method of claim 17 further comprising wherein the second
bonding layer is layer transferred to the first bonding layer of
the first substrate.
19. The method of claim 12 further comprising wherein the device
layer comprises one of an RFIC and a high voltage IC.
20. The method of claim 12 further comprising wherein the
sacrificial material is removed utilizing a vapor HF process.
21. The method of claim 12 further comprising wherein a donor wafer
is released from the second substrate during the layer transfer
process.
22. The method of claim 13 further comprising wherein MEMS devices
are coupled to the second substrate by forming conductive contacts
between portions of individual device structures within the second
substrate and the MEMS structures.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This is a Divisional Application of U.S. patent application
Ser. No. 13/798,600, filed on Mar. 13, 2013, which is presently
pending, the entire contents of which is hereby incorporated by
reference in its entirety for all purposes.
BACKGROUND OF THE INVENTION
[0002] As microelectronic technology advances for higher
performance, increasing number of sensors, such as accelerometers,
gyroscopes and compasses, for example, are being used in such
applications as mobile phones and tablets. Many different types of
microelectronic devices/chips, such as complementary metal oxide
semiconductor (CMOS) chips, for example, may be used together with
such sensors in many computing and communication platforms.
BRIEF DESCRIPTION OF THE DRAWINGS
[0003] While the specification concludes with claims particularly
pointing out and distinctly claiming certain embodiments, the
advantages of these embodiments can be more readily ascertained
from the following description of the invention when read in
conjunction with the accompanying drawings in which:
[0004] FIGS. 1A-1B represent cross-sectional views of structures
according to various embodiments.
[0005] FIGS. 2A-2G represent cross-sectional views of structures
according to embodiments.
[0006] FIG. 2H represents a flow chart of a method according to
embodiments.
[0007] FIG. 3 represents a cross-sectional view of a structure
according to embodiments.
[0008] FIG. 4 represents a schematic of a system according to
embodiments.
DETAILED DESCRIPTION OF THE PRESENT INVENTION
[0009] In the following detailed description, reference is made to
the accompanying drawings that show, by way of illustration,
specific embodiments in which the methods and structures may be
practiced. These embodiments are described in sufficient detail to
enable those skilled in the art to practice the embodiments. It is
to be understood that the various embodiments, although different,
are not necessarily mutually exclusive. For example, a particular
feature, structure, or characteristic described herein, in
connection with one embodiment, may be implemented within other
embodiments without departing from the spirit and scope of the
embodiments. In addition, it is to be understood that the location
or arrangement of individual elements within each disclosed
embodiment may be modified without departing from the spirit and
scope of the embodiments. The following detailed description is,
therefore, not to be taken in a limiting sense, and the scope of
the embodiments is defined only by the appended claims,
appropriately interpreted, along with the full range of equivalents
to which the claims are entitled. In the drawings, like numerals
may refer to the same or similar functionality throughout the
several views.
[0010] Methods and associated structures of forming and utilizing
microelectronic structures, such as integrated
microelectromechanical systems (MEMS) structures, are described.
Those methods/structures may include forming at least one MEMS
structure on a first substrate, forming a first bonding layer on a
top surface of the first substrate, and then coupling the first
bonding layer disposed on the first substrate to a second
substrate, wherein the second substrate comprises a device layer.
The bonding may comprise a layer transfer process, wherein an
integrated MEMS device is formed. The integrated MEMS structures of
the various embodiments disclosed herein enable the decoupling of
sensor fabrication from chip/device fabrication.
[0011] FIGS. 1A-1B illustrate cross-sectional views of embodiments
of forming microelectronic structures, such as integrated MEMS
structures. In an embodiment, a first substrate 100 may comprise
any suitable material with which to form at least one MEMS
structure. In an embodiment, the first substrate 100 may comprise
at least one of a silicon on insulator material, a non-silicon
material, a single crystal silicon material, a polysilicon
material, a piezoelectric material and/or other electromechanical
transduction sensitive material. The substrate 100 may comprise a
fixed element 102, and a moveable element 104. The fixed element
102 may be fixed to a lower portion 101 of the first substrate 100
by the use of an adhesion layer 114.
[0012] The moveable element 104 and the fixed element 102 may
comprise portions of a MEMS device(s), wherein the MEMS device may
comprise at least one of a sensor, a microsensor, a resonator, an
actuator, a microactuator, a transducer, a gyroscope, an
accelerometer, and a compass, for example. The first substrate 100
may comprise at least one of any type of MEMS structure, according
to a particular application. In general MEMS technology refers to
very small or miniaturized mechanical and electro-mechanical
devices driven by electricity. The MEMS structures of the first
substrate may be formed by any suitable fabrication processes.
There may be at least one MEMS devices/structures, and in some
cases there may be a plurality of MEMS structures disposed within
the first substrate 100, although for purposes of illustration
portions of one MEMS is depicted in the figures.
[0013] The first substrate 100 may further comprise at least one
pillar structure 106. An upper portion 108 of the first substrate
100 may be disposed on the pillar 106. In an embodiment, the upper
portion 108 and the pillar 106 may comprise a high temperature
material, such as an epitaxially grown material, for example. In an
embodiment, the pillar and upper portion 106, 108 may comprise an
epitaxially grown silicon material. In an embodiment, the upper
portion 108 of the first substrate 100 may hermetically seal the at
least one MEMS device of the first substrate 100. In an embodiment,
the upper portion 108 may surround the perimeter of the MEMS
structure 130.
[0014] The first substrate 100 may further comprise a first bonding
layer 110, that may be disposed on a top surface 109 of the upper
portion of the substrate 108. In an embodiment, the first bonding
layer 110 may be disposed over substantially the entire top surface
109 of the upper portion 108 of the first substrate 100. In an
embodiment, a gap 112 may exist between the lower portion 101 and
the upper portion 108 of the first substrate 100. In an embodiment,
a second substrate 120 may comprise a donor portion 121, an
implanted region 122, and a device layer 126, wherein the device
layer 126 may comprise any type of device, such as a
microelectronic device/die and a CMOS device/chip.
[0015] The device layer 126 may comprise circuitry elements such as
transistor structures including trigate and nanowire transistor
structures, and any other suitable circuitry elements. The
circuitry elements may comprise logic circuitry for use in a
processor die, for example. Metallization layers and insulative
material may be included in the device layer 126, as well as
conductive contacts/bumps that may couple metal
layers/interconnects to external devices. In an embodiment, the
bumps may comprise copper. In an embodiment, the second substrate
120 may further comprise a second bonding layer 124. In an
embodiment, the second bonding layer 124 may comprise any type of
material that may be bonded to the first bonding layer 110 of the
first substrate 100. In an embodiment, the second bonding layer 124
may be disposed over an entire top surface 123 of the device layer
126. In an embodiment, a layer transfer process 128, which may
comprise an oxide to oxide or a metal to metal bonding process, for
example, may be employed to bond the first substrate 100 to the
second substrate 120 to form an integrated MEMS structure 130 (FIG.
1B). In an embodiment, the second bonding layer 224 may be directly
bonded to the device layer 226, and the device layer 226 may be
directly bonded to the first bonding layer 210.
[0016] In an embodiment, the integrated MEMS structure/device 130
may comprise the first substrate 100 bonded to the second substrate
120, wherein the first bonding layer 110 of the first substrate 100
is bonded to the second bonding layer 124 of the second substrate
120. In an embodiment, the integrated MEMS structure 130 may
comprise any suitable types of material for the first and the
second substrates, and may comprise any types and numbers of MEMS
devices according to the particular application. For example, in an
embodiment, device layer of the second substrate of the integrated
MEMS structures 130 may comprise a high voltage integrated circuit
(IC) comprising non-silicon materials, and the first substrate 100
may comprise a select sensor. In another embodiment, the device
layer of the integrated MEMS structure may comprise a radio
frequency (RF) chip.
[0017] FIGS. 2A-2G depict cross-sectional views of additional
embodiments of forming integrated MEMS structures. In FIG. 2A, a
substrate 200, which may comprise a silicon on insulator substrate
200 in an embodiment, may comprise a fixed element 202 and a
moveable element 204. The fixed element 202 and the moveable
element 204 may comprise portions of at least one MEMS
structure/device. In an embodiment, the fixed element 202 may
comprise anchors and or electrodes. In an embodiment, the fixed
element 202 may be fixed to a lower portion of the substrate 201 by
an adhesion layer 214, such as an oxide layer in some cases.
[0018] In an embodiment, a sacrificial conformal material 205 may
be formed around the moveable element 204 and on a top surface of
the substrate 200 (FIG. 2B). The sacrificial conformal layer 205
may comprise a dielectric material, such as an oxide or nitride
dielectric material, for example. The sacrificial conformal
material 205 may be patterned and etched using any suitable
patterning and etching techniques, to form openings 207, such as
contact openings 207, in the sacrificial conformal material 205. In
an embodiment, a high temperature material 213 may be formed within
the openings 207, and may be formed on a top surface of the
sacrificial conformal material 205 (FIG. 2C).
[0019] In an embodiment, the high temperature material 213 may
comprise an epitaxially grown material, such as an epitaxial
material comprising silicon, for example, and may be formed/grown
at a temperature between about 500 to about 1000 degrees Celsius.
In an embodiment, the high temperature material 213 may be
patterned and etched to form desired features according to the
particular application. The sacrificial conformal material 205 may
be subsequently removed from the substrate 200 using any suitable
removal/etching technique (FIG. 2D). In an embodiment, the
sacrificial conformal material 205 may be removed utilizing a vapor
HF etching process, for example. In an embodiment, pillar
structures 206 and an upper portion 208 comprising the high
temperature material may be formed.
[0020] A gap (which may comprise an air gap) may exist around the
moveable element 204 and between the pillar structures 206. The
pillar structures 206 and the upper portion 208 of the high
temperature material may provide a seal for the substrate 200
comprising the MEMS devices, and may further comprise a hermetic
seal. The high temperature material may surround a perimeter of the
first substrate comprising the MEMS devices in an embodiment.
[0021] A bonding layer 210 may be formed on a top surface 209 of
the upper portion 208 of the high temperature material (FIG. 2E).
The bonding layer 210 may comprise any suitable material with which
to bond the first substrate 200, with another substrate, by
utilizing a bonding process, such as a layer transfer process. In
an embodiment, the bonding layer 210 may comprise a dielectric
layer, such as a chemical vapor deposition (CVD) dielectric
material or a thermally grown oxide or nitride material. In another
embodiment, the bonding layer 210 may comprise a polished silicon
material, or a conductive material, such as a metal.
[0022] In an embodiment, the first substrate 200 may be bonded to a
second substrate 220 (FIG. 2F). In an embodiment, a top surface of
a second bonding layer 224 disposed on a device layer 226 of the
second substrate 220 may be bonded with the top surface 211 of the
first bonding layer 210 utilizing a layer transfer process 228. In
an embodiment, the second bonding layer 224 may comprise any
material that is capable of bonding with the first bonding layer
210. In an embodiment, the second bonding layer 224 may comprise
such materials as a dielectric material, such as a CVD or a
thermally grown oxide or nitride material, a polished silicon
material, or a conductive material. The second substrate 220 may
further comprise a separating layer 222, which may comprise an ion
implanted layer, such as a hydrogen implanted layer, in some cases,
wherein the separating layer 222 may be cleaved/separated from a
donor portion 221 of the second substrate 220.
[0023] In an embodiment, the second substrate 220 may be layer
transferred utilizing the layer transfer process 228 to bond with
the first substrate 200, wherein the device layer 226 is joined to
the first substrate 200 by the bonding between the first and second
bonding layers 210, 224 (FIG. 2G). The donor portion 221 of the
second substrate 220 may be removed/separated from the second
substrate 220 by cleaving the donor portion 221 at the separating
layer 222. Thus, an integrated MEMS device/structure 230 may be
formed, wherein the formation of the MEMS structures are decoupled
from the device layer 226 fabrication. The device layer 226 may
comprise any type of device, such as a CMOS device, an RF IC, a
high voltage IC etc.
[0024] In an embodiment, further patterning and etching may be
performed on the integrated MEMS device 130, wherein conductive
contacts may be formed between portions of the MEMS structures of
the first substrate 200 and portions/devices of the device layer
226 of the second substrate 220. For example, conductive contact
structures may be formed between at least one of a transistor, a
capacitor and a resistor of the device layer 226 and the moveable
element 204 of the first substrate 200. In an embodiment, the
bonding layers 210, 224 may provide isolation for such conductive
contact structures. In an embodiment, the integrated MEMS device
130 may be further coupled with additional devices/die, and may
comprise a portion of a system on a chip, either alone or combined
with additional chips/devices so coupled, in some embodiments.
[0025] FIG. 2H depicts a flow chart of a method of forming an
integrated MEMS structure according to another embodiment. At step
250, at least one MEMS structure may be formed on a first
substrate. At step 260 a first bonding layer may be formed on the
first substrate. At step 270, the first bonding layer on the first
substrate may be coupled to a second bonding layer of a second
substrate, wherein the second substrate comprises a device layer.
At step 280, conductive contacts maybe formed between the at least
one MEMS structure and the device layer. In an embodiment, the
device layer may comprise one of a microelectronic memory die and a
central processing unit die in some cases, but may comprise any
type of suitable device 114 according to the particular application
in other cases. In an embodiment, the device layer may be further
coupled with a package structure, such as an organic core package,
and a coreless, bumpless build up layer (BBUL) package
structure.
[0026] In an embodiment, the device layer may be coupled with any
suitable type of package structures capable of providing electrical
communications between a microelectronic device, such as a die and
a next-level component to which the package structures may be
coupled (e.g., a circuit board). In another embodiment, the device
layer may be coupled with a package structure that may comprise any
suitable type of package structures capable of providing electrical
communication between a die and an upper integrated circuit (IC)
package coupled with the device layer.
[0027] A device layer described in the various Figures herein may
comprise a silicon logic die or a memory die, for example, or any
type of suitable microelectronic device/die. In some embodiments
the device layer may further comprise a plurality of dies, which
may be stacked upon one another, depending upon the particular
embodiment. In some cases the die(s) of the device layer may be
located/attached/embedded on either the front side, back side or
on/in some combination of the front and back sides of a package
structure. In an embodiment, the die(s) may be partially or fully
embedded in a package structure of the embodiments.
[0028] The various embodiments of the integrated MEMS structures
included herein enable the decoupling of device fabrication, such
as CMOS fabrication, and MEMS fabrication. The embodiments also
allow for the continued decrease in scale of device layer circuitry
without impacting MEMS feature size. By decoupling MEMS
fabrication, hermetic seal formation is enabled because of the
incorporation of a high temperature epitaxial seal. High voltage
IC's with select sensors utilizing non-Silicon CMOS, as well as RF
filters and RF switch applications are enabled, which may operate
above about 31.8 GHz, for example. Inertial sensors such as
accelerometers and gyroscopes can be implemented with a chipset or
a system on a chip. Timing resonators are enabled that may be
buried under the CMOS for use in mobile communication IC's for
lower power applications and improved system performance.
[0029] Turning now to FIG. 3, illustrated is an embodiment of a
computing system 300. The system 300 includes a number of
components disposed on a mainboard 310 or other circuit board.
Mainboard 310 includes a first side 312 and an opposing second side
314, and various components may be disposed on either one or both
of the first and second sides 312, 314. In the illustrated
embodiment, the computing system 300 includes a package structure
340 disposed on the mainboard's first side 312, wherein the package
structure 340 may comprise any of the integrated MEMS structure
embodiments described herein.
[0030] System 300 may comprise any type of computing system, such
as, for example, a hand-held or mobile computing device (e.g., a
cell phone, a smart phone, a mobile internet device, a music
player, a tablet computer, a laptop computer, a nettop computer,
etc.). However, the disclosed embodiments are not limited to
hand-held and other mobile computing devices and these embodiments
may find application in other types of computing systems, such as
desk-top computers and servers.
[0031] Mainboard 310 may comprise any suitable type of circuit
board or other substrate capable of providing electrical
communication between one or more of the various components
disposed on the board. In one embodiment, for example, the
mainboard 310 comprises a printed circuit board (PCB) comprising
multiple metal layers separated from one another by a layer of
dielectric material and interconnected by electrically conductive
vias. Any one or more of the metal layers may be formed in a
desired circuit pattern to route--perhaps in conjunction with other
metal layers--electrical signals between the components coupled
with the board 310. However, it should be understood that the
disclosed embodiments are not limited to the above-described PCB
and, further, that mainboard 310 may comprise any other suitable
substrate.
[0032] In addition to the package structure 340, one or more
additional components may be disposed on either one or both sides
312, 314 of the mainboard 310. By way of example, as shown in the
figures, components 301a may be disposed on the first side 312 of
the mainboard 310, and components 301b may be disposed on the
mainboard's opposing side 314. Additional components that may be
disposed on the mainboard 310 include other IC devices (e.g.,
processing devices, memory devices, signal processing devices,
wireless communication devices, graphics controllers and/or
drivers, audio processors and/or controllers, etc.), power delivery
components (e.g., a voltage regulator and/or other power management
devices, a power supply such as a battery, and/or passive devices
such as a capacitor), and one or more user interface devices (e.g.,
an audio input device, an audio output device, a keypad or other
data entry device such as a touch screen display, and/or a graphics
display, etc.), as well as any combination of these and/or other
devices.
[0033] In one embodiment, the computing system 300 includes a
radiation shield. In a further embodiment, the computing system 300
includes a cooling solution. In yet another embodiment, the
computing system 300 includes an antenna. In yet a further
embodiment, the assembly 300 may be disposed within a housing or
case. Where the mainboard 310 is disposed within a housing, some of
the components of computer system 300--e.g., a user interface
device, such as a display or keypad, and/or a power supply, such as
a battery--may be electrically coupled with the mainboard 310
(and/or a component disposed on this board) but may be mechanically
coupled with the housing.
[0034] FIG. 4 is a schematic of a computer system 400 according to
an embodiment. The computer system 400 (also referred to as the
electronic system 400) as depicted can embody/include a package
structure/integrated MEMS structure that includes any of the
several disclosed embodiments and their equivalents as set forth in
this disclosure. The computer system 400 may be a mobile device
such as a netbook computer. The computer system 400 may be a mobile
device such as a wireless smart phone. The computer system 400 may
be a desktop computer. The computer system 400 may be a hand-held
reader. The computer system 400 may be integral to an automobile.
The computer system 400 may be integral to a television.
[0035] In an embodiment, the electronic system 400 is a computer
system that includes a system bus 420 to electrically couple the
various components of the electronic system 400. The system bus 420
is a single bus or any combination of busses according to various
embodiments. The electronic system 400 includes a voltage source
430 that provides power to the integrated circuit 410. In some
embodiments, the voltage source 430 supplies current to the
integrated circuit 410 through the system bus 420.
[0036] The integrated circuit 410 is electrically, communicatively
coupled to the system bus 420 and includes any circuit, or
combination of circuits according to an embodiment, including the
package/device of the various embodiments included herein. In an
embodiment, the integrated circuit 410 includes a processor 412
that can include any type of packaging structures according to the
embodiments herein. As used herein, the processor 412 may mean any
type of circuit such as, but not limited to, a microprocessor, a
microcontroller, a graphics processor, a digital signal processor,
or another processor. In an embodiment, the processor 412 includes
any of the embodiments of the package structures disclosed herein.
In an embodiment, SRAM embodiments are found in memory caches of
the processor.
[0037] Other types of circuits that can be included in the
integrated circuit 410 are a custom circuit or an
application-specific integrated circuit (ASIC), such as a
communications circuit 414 for use in wireless devices such as
cellular telephones, smart phones, pagers, portable computers,
two-way radios, and similar electronic systems. In an embodiment,
the processor 412 includes on-die memory 416 such as static
random-access memory (SRAM). In an embodiment, the processor 412
includes embedded on-die memory 416 such as embedded dynamic
random-access memory (eDRAM).
[0038] In an embodiment, the integrated circuit 410 is complemented
with a subsequent integrated circuit 411. In an embodiment, the
dual integrated circuit 411 includes embedded on-die memory 417
such as eDRAM. The dual integrated circuit 411 includes an RFIC
dual processor 413 and a dual communications circuit 415 and dual
on-die memory 417 such as SRAM. The dual communications circuit 415
may be configured for RF processing.
[0039] At least one passive device 480 is coupled to the subsequent
integrated circuit 411. In an embodiment, the electronic system 400
also includes an external memory 440 that in turn may include one
or more memory elements suitable to the particular application,
such as a main memory 442 in the form of RAM, one or more hard
drives 444, and/or one or more drives that handle removable media
446, such as diskettes, compact disks (CDs), digital variable disks
(DVDs), flash memory drives, and other removable media known in the
art. The external memory 440 may also be embedded memory 448. In an
embodiment, the electronic system 400 also includes a display
device 450, and an audio output 460. In an embodiment, the
electronic system 400 includes an input device such as a controller
470 that may be a keyboard, mouse, touch pad, keypad, trackball,
game controller, microphone, voice-recognition device, or any other
input device that inputs information into the electronic system
400. In an embodiment, an input device 470 includes a camera. In an
embodiment, an input device 470 includes a digital sound recorder.
In an embodiment, an input device 470 includes a camera and a
digital sound recorder.
[0040] Although the foregoing description has specified certain
steps and materials that may be used in the methods of the
embodiments, those skilled in the art will appreciate that many
modifications and substitutions may be made. Accordingly, it is
intended that all such modifications, alterations, substitutions
and additions be considered to fall within the spirit and scope of
the embodiments as defined by the appended claims. In addition, the
Figures provided herein illustrate only portions of exemplary
microelectronic devices and associated package structures that
pertain to the practice of the embodiments. Thus the embodiments
are not limited to the structures described herein.
* * * * *