U.S. patent application number 14/482076 was filed with the patent office on 2015-09-24 for method for fabrication pattern of nano material.
The applicant listed for this patent is INHA-INDUSTRY PARTNERSHIP INSTITUTE. Invention is credited to Myung-Soo KIM, Jin-Kyun LEE, Se-Geun PARK, Jung SEOKHEON.
Application Number | 20150266051 14/482076 |
Document ID | / |
Family ID | 54141190 |
Filed Date | 2015-09-24 |
United States Patent
Application |
20150266051 |
Kind Code |
A1 |
PARK; Se-Geun ; et
al. |
September 24, 2015 |
METHOD FOR FABRICATION PATTERN OF NANO MATERIAL
Abstract
The present invention provides a method for fabricating nano
material pattern comprising the steps of forming a perfluorinated
polymer pattern on top of the substrate (step 1); spreading a
dispersion containing the dispersed nano material on the substrate
patterned in step 1) (step 2); and eliminating the perfluorinated
polymer pattern formed on the substrate of step 2) (step 3). The
method for fabricating nano material pattern of the present
invention has advantages over the conventional lift-off method for
the fabrication of nano material pattern, which are easiness in
eliminating the perfluorinated polymer pattern after forming the
nano material pattern with it and no chance of damaging the
substrate, suggesting that the method of the invention is excellent
in fabricating an excellent nano material pattern.
Inventors: |
PARK; Se-Geun; (Seoul,
KR) ; LEE; Jin-Kyun; (Incheon, KR) ; KIM;
Myung-Soo; (Gyeonggi-do, KR) ; SEOKHEON; Jung;
(Incheon, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
INHA-INDUSTRY PARTNERSHIP INSTITUTE |
Incheon |
|
KR |
|
|
Family ID: |
54141190 |
Appl. No.: |
14/482076 |
Filed: |
September 10, 2014 |
Current U.S.
Class: |
427/510 ;
427/282 |
Current CPC
Class: |
H01L 51/444 20130101;
H01L 51/0023 20130101; H01L 31/18 20130101; H01L 51/44 20130101;
Y02E 10/549 20130101 |
International
Class: |
B05D 1/28 20060101
B05D001/28; B05D 1/32 20060101 B05D001/32 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 19, 2014 |
KR |
10-2014-0032052 |
Jun 24, 2014 |
KR |
10-2014-0077598 |
Jun 24, 2014 |
KR |
10-2014-0077599 |
Claims
1. A method for fabricating nano material pattern comprising the
following steps: forming a perfluorinated polymer pattern on top of
the substrate (step 1); spreading a dispersion containing the
dispersed nano material on the substrate patterned in step 1) (step
2); and eliminating the perfluorinated polymer pattern formed on
the substrate of step 2) (step 3).
2. The method for fabricating nano material pattern according to
claim 1, wherein the method to form the pattern of step 1) is
composed of the following steps: preparing a polymer mold in which
a convex part and a concave part are formed (step a); preparing a
polymer solution containing a perfluorinated polymer (step b);
forming a polymer layer on the surface of the convex part of the
polymer mold by spreading the polymer solution prepared in step b)
on the polymer mold prepared in step a) (step c); and transcribing
the polymer layer formed on the surface of the convex part of the
polymer mold by contacting the polymer mold having the polymer
layer formed in step c) with the substrate (step d).
3. The method for fabricating nano material pattern according to
claim 2, wherein the polymer mold of step a) is
hard-polydimethylsiloxane (h-PDMS) or soft-polydimethylsiloxane
(s-PDMS) mold.
4. The method for fabricating nano material pattern according to
claim 2, wherein the polymer solution of step b) includes a fluoro
solvent.
5. The method for fabricating nano material pattern according to
claim 2, wherein the concentration of the perfluorinated polymer of
step b) is 1.about.50 weight % by the total weight of the polymer
solution.
6. The method for fabricating nano material pattern according to
claim 1, wherein the method to form the pattern in step 1) is
composed of the following steps: preparing a polymer mold in which
a convex part and a concave part are formed (step a); preparing a
polymer solution containing a perfluorinated polymer (step b);
forming a polymer layer in the concave part of the polymer mold by
spreading the polymer solution prepared in step b) on the polymer
mold prepared in step a) (step c); and transcribing the polymer
layer formed in the concave part of the polymer mold by contacting
the polymer mold having the polymer layer formed in step c) with
the substrate (step d).
7. The method for fabricating nano material pattern according to
claim 6, wherein the pressure given to the polymer mold of step d)
is 0.1.about.5.0 Mpa.
8. The method for fabricating nano material pattern according to
claim 1, wherein the method to form the pattern in step 1) is
composed of the following steps: preparing a polymer mold in which
a convex part and a concave part are formed (step a); preparing a
polymer solution containing a perfluorinated polymer (step b);
forming a polymer layer on the surface of the convex part and in
the concave part of the polymer mold by spreading the polymer
solution prepared in step b) on the polymer mold prepared in step
a) (step c); transcribing the polymer layer formed on the surface
of the convex part of the polymer mold by contacting the polymer
mold having the polymer layer formed in step c) with the substrate
(step d); and transcribing the polymer layer formed in the concave
part of the polymer mold by contacting the polymer mold finished
with step d) with a new substrate and pressing thereof (step
e).
9. The method for fabricating nano material pattern according to
claim 1, wherein the method to form the pattern in step 1) is
composed of the following steps: preparing a polymer solution
containing a perfluorinated polymer (step a); forming a
perfluorinated polymer thin layer on a substrate by spreading the
polymer solution prepared in step a) on top of the substrate (step
b); layering the patterned mask on top of the perfluorinated
polymer thin layer formed in step b), followed by UV-irradiation
(step c); and eliminating the non-irradiated part in step c) by
using a solvent (step d).
10. The method for fabricating nano material pattern according to
claim 1, wherein the method to form the pattern in step 1) is
composed of the following steps: preparing a polymer solution
containing a perfluorinated polymer (step a); forming a
perfluorinated polymer thin layer on top of the polymer mold by
spreading the polymer solution prepared in step a) thereon (step
b); layering the patterned mask on top of the perfluorinated
polymer thin layer formed in step b), followed by UV-irradiation
(step c); eliminating the non-irradiated part in step c) by using a
solvent (step d); and transcribing the pattern formed in step d) on
the polymer mold by contacting the pattern with a substrate (step
e).
11. The method for fabricating nano material pattern according to
claim 1, wherein the method to form the pattern of step 1) is
selected from the group consisting of microcontact printing,
photolithography, imprint method, inkjet printing, and
dispensing.
12. The method for fabricating nano material pattern according to
claim 1, wherein the perfluorinated polymer of step 1) is a
homopolymer or a copolymer containing poly(perfluoroalkyl
methacrylate) or poly(perfluoroalkyl acrylate).
13. The method for fabricating nano material pattern according to
claim 1, wherein the substrate of step 1) is selected from the
group consisting of silicone substrate, glass substrate, poly
methyl methacrylate (PMMA) substrate, poly vinyl pirrolidone (PVP)
substrate, polystyrene (PS) substrate, polycarbonate (PC)
substrate, polyethersulfone (PES) substrate, cyclic olefin
copolymer (COC) substrate, TAC (triacetylcellulose) substrate,
polyvinyl alcohol substrate, polyimide (PI) substrate,
polyethyleneterephthalate (PET) substrate, and
polyethylenenaphthalate (PEN) substrate.
14. The method for fabricating nano material pattern according to
claim 1, wherein the thickness of the pattern fabricated in step 1)
is 50 nm.about.10 .mu.m.
15. The method for fabricating nano material pattern according to
claim 1, wherein the nano material of step 2) is one or more
materials selected from the group consisting of metal nano wire,
oxide nano wire, carbon nano tube, graphene, metal nano particle,
and oxide nano particle.
16. A method for fabricating nano material pattern comprising the
following steps: forming a perfluorinated polymer pattern on top of
the substrate (step 1); spreading a dispersion containing the
dispersed nano material and a functional material on the substrate
patterned in step 1) (step 2); and eliminating the perfluorinated
polymer pattern formed on the substrate of step 2) (step 3).
17. The method for fabricating nano material pattern according to
claim 16, wherein the method for spreading the dispersion
containing nano material dispersed therein and the functional
material on the substrate in step 2) is one of the methods selected
from the group consisting of the followings: the method comprising
the steps of spreading the nano material dispersion first and then
spreading the functional material, the method comprising the steps
of spreading the functional material first and then spreading the
nano material dispersion; and the method comprising the steps of
spreading the functional material, spreading the nano material
dispersion and then spreading the functional material thereon.
18. The method for fabricating nano material pattern according to
claim 16, wherein the functional material of step 2) is one or more
materials selected from the group consisting of metal oxides,
conducting polymers, UV curable polymers, thermal curable polymers,
and dielectric polymers.
19. The method for fabricating nano material pattern according to
claim 1, wherein the elimination of the perfluorinated polymer
pattern in step 3) is performed by using a fluoro solvent.
20. A method for fabricating nano material pattern comprising the
following steps: forming a perfluorinated polymer pattern on top of
the substrate (step 1); spreading a dispersion containing the
dispersed nano material on the substrate patterned in step 1) (step
2) eliminating the perfluorinated polymer pattern formed on the
substrate of step 2) (step 3); and inserting the nano material
pattern formed by eliminating the perfluorinated polymer pattern in
step 3 into the inside of the substrate (step 4).
21. The method for fabricating nano material pattern according to
claim 20, wherein when the substrate of step 1) is an organic
substrate, step 4) is accomplished by inserting the nano material
pattern into the substrate by giving thermo-compression on top of
the substrate having the nano material pattern thereon.
22. The method for fabricating nano material pattern according to
claim 20, wherein when the substrate of step 1) is an inorganic
substrate, step 4) is accomplished by inserting the nano material
pattern into a new organic substrate by contacting the nano
material pattern generated on the inorganic substrate with the new
organic substrate and then being followed by thermo-compression.
Description
CROSS-REFERENCES TO RELATED APPLICATION
[0001] This application claims the benefit of priority from Korean
Patent Application No. 10-2014-0032052, filed on Mar. 19, 2014, in
the Korean Intellectual Property Office, Korean Patent Application
No. 10-2014-0077598, filed on Jun. 24, 2014, in the Korean
Intellectual Property Office and Korean Patent Application No.
10-2014-0077599, filed on Jun. 24, 2014, in the Korean Intellectual
Property Office the contents of which are incorporated herein by
reference in its entirety.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a method for fabricating
nano material pattern.
[0004] 2. Description of the Related Art
[0005] Indium tin oxide (ITO), one of the representative
transparent electrode materials, has been widely applied to a
variety of devices including liquid crystal display, organic light
emitting display, touch screen, electroluminescent device, and
photoelectric cell, etc. As the area of flat display gets larger,
sheet resistance becomes a problem of the conventional ITO applied
thereto. When ITO is applied to flexible display, cracks happen to
be developed, which limits the use of ITO.
[0006] To overcome the above problem, an alternative for ITO such
as metal nano wire, carbon nano tube, graphene, and conducting
polymer has been tried and a technique to use a metal thin film
with a mesh pattern is under development.
[0007] Such materials as metal nano wire, carbon nano tube, and
graphene are used as the form of dispersion which can be prepared
by dispersing the said material in a specific solvent, in order to
make a film. At this time, the method for fabrication of a pattern
based on such dispersion is limited.
[0008] The conventional method for fabrication of a specific
material pattern based on dispersion is composed of the following
processes: spraying the dispersion to a material for coating; and
etching the coated material to form a pattern. For example, Korean
Patent Publication No. 10-2013-0048717 describes the nanowire-based
transparent conductors and methods of patterning same.
Particularly, that invention is related to the partial etching to
form low-visible or invisible patterns.
[0009] There is another invention related to the method for
preparing nano wire comprising the steps of oxidizing copper nano
wire by laser irradiation; and reducing the oxidized copper nano
wire to generate the sintered nano wire, and the method for
fabrication of nano wire pattern (Korean Patent No. 10-1357179).
The method comprising the steps of coating patterned mold with
silver nano wire and directly transcribing the coated silver nano
wire on the substrate has also been reported (Nano. Res., 3, 564,
2010). Another example is the method for fabrication of a pattern
by treating the substrate partially with dopamine to increase
hydrophilicity (ACS Appl. Mater. Interfaces., 4, 1855, 2012).
[0010] The most common method used in the semiconductor
manufacturing process, so called `lift-off`, is characterized by
the steps of forming a photoresist pattern on a substrate via
photolithography; and then eliminating the photoresist by coating
the substrate with a material requiring fabrication. However, the
dispersion can hardly be used in the next procedure. The
disadvantages of the method are firstly difficulty in photoresist
patterning on an organic substrate and secondly elimination of the
photoresist pattern by a specific solvent used as the dispersion
(for example, IPA, ethanol, etc). Even if the photoresist pattern
is not eliminated somehow, nano material such as nano wire can be
separated by a solvent such as acetone during the elimination
process of photoresist pattern, which is also a problem.
[0011] Therefore, when fabricating a material in a dispersion is
induced according to the method of lift-off, it is not supposed for
the dispersion solvent to eliminate a polymer pattern formed on an
organic substrate and it is not supposed for the polymer pattern to
react with nano material like nano wire in order to prevent the
nano material from being off from the substrate. The solvent that
eliminates the patterned polymer should not affect the organic
substrate.
[0012] In the course of studying a method for fabricating nano
material pattern that can satisfy the above conditions, the present
inventors succeeded in forming a polymer pattern by applying
perfluorinated polymer on a substrate and accordingly developed a
method for fabricating nano material pattern by using the
dispersion prepared by spraying nano material on the formed polymer
pattern, leading to the completion of this invention.
SUMMARY OF THE INVENTION
[0013] It is an object of the present invention to provide a method
for fabricating nano material pattern.
[0014] To achieve the above object, the present invention provides
a method for fabricating nano material pattern comprising the
following steps:
[0015] forming a perfluorinated polymer pattern on top of the
substrate (step 1);
[0016] spreading a dispersion containing the dispersed nano
material on the substrate patterned in step 1) (step 2); and
[0017] eliminating the perfluorinated polymer pattern formed on the
substrate of step 2) (step 3).
[0018] The present invention also provides a method for fabricating
nano material pattern comprising the following steps:
[0019] forming a perfluorinated polymer pattern on top of the
substrate (step 1);
[0020] spreading a dispersion containing the dispersed nano
material and a functional material on the substrate patterned in
step 1) (step 2); and
[0021] eliminating the perfluorinated polymer pattern formed on the
substrate of step 2) (step 3).
[0022] In addition, the present invention provides a method for
fabricating nano material pattern comprising the following
steps:
[0023] forming a perfluorinated polymer pattern on top of the
substrate (step 1);
[0024] spreading a dispersion containing the dispersed nano
material on the substrate patterned in step 1) (step 2)
[0025] eliminating the perfluorinated polymer pattern formed on the
substrate of step 2) (step 3); and
[0026] inserting the nano material pattern formed by eliminating
the perfluorinated polymer pattern in step 3 into the inside of the
substrate (step 4).
Advantageous Effect
[0027] As explained hereinbefore, the method for fabricating nano
material pattern of the present invention makes the elimination of
a perfluorinated polymer pattern easy after forming the nano
material pattern by using a perfluorinated polymer according to the
conventional lift-off and also makes the fabrication of an
excellent nano material pattern easy without damaging the substrate
or the nano material.
BRIEF DESCRIPTION OF THE DRAWINGS
[0028] The application of the preferred embodiments of the present
invention is best understood with reference to the accompanying
drawings, wherein:
[0029] FIG. 1.about.FIG. 5 are photographs of the nano material
patterns fabricated in example 1.about.example 5 of the present
invention, observed under scanning electron microscope (SEM);
[0030] FIG. 6.about.FIG. 8 are photographs of the nano material
patterns containing the functional materials fabricated in example
9.about.example 11 of the present invention, observed under
scanning electron microscope (SEM);
[0031] FIG. 9 is a schematic diagram illustrating an example of the
methods for inserting the nano material pattern into the inside of
the substrate in step 4) of the method of the invention;
[0032] FIG. 10 and FIG. 11 are photographs of the nano material
patterns inserted in the substrate in examples 12 and 13 of the
present invention, observed under scanning electron microscope
(SEM).
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0033] The present invention provides a method for fabricating nano
material pattern comprising the following steps:
[0034] forming a perfluorinated polymer pattern on top of a
substrate (step 1);
[0035] spreading a dispersion containing the dispersed nano
material on the substrate patterned in step 1) (step 2);
[0036] and eliminating the perfluorinated polymer pattern formed on
the substrate of step 2) (step 3).
[0037] Hereinafter, the method for fabricating nano material
pattern of the present invention is described in more detail, step
by step.
[0038] In the method for fabricating nano material pattern of the
present invention, step 1) is to form a perfluorinated polymer
pattern on top of a substrate.
[0039] In step 1), the perfluorinated polymer pattern is formed on
top of a generally used substrate.
[0040] Particularly, the perfluorinated polymer of step 1) is a
homopolymer or a copolymer containing poly(perfluoroalkyl
methacrylate) or poly(perfluoroalkyl acrylate). At this time, alkyl
of the poly(perfluoroalkyl methacrylate) or poly(perfluoroalkyl
acrylate) is C.sub.3.about.C.sub.20 straight chain or branched
chain alkyl, and more preferably C.sub.6.about.C.sub.12 straight
chain or branched chain alkyl. The said polymer can contain at
least 6 fluoro groups (--F). It also can be a copolymer having
solubility with a perfluorinated solvent obtained by
copolymerization between a proper amount of a non-fluorinated
monomer with poly(perfluoroalkyl methacrylate), or a commercialized
amorphous polymer material such as CYTOP, TEFLOON AF, etc. For
example, it can be poly(1H,1H,2H,2H-Perfluorodecyl methacrylate
(PFDMA).
[0041] The substrate of step 1) can be any substrate as long as it
has excellent adhesiveness with the perfluorinated polymer, but is
preferably exemplified by silicone substrate, glass substrate, poly
methyl methacrylate (PMMA) substrate, poly vinyl pirrolidone (PVP)
substrate, polystyrene (PS) substrate, polycarbonate (PC)
substrate, polyethersulfone (PES) substrate, cyclic olefin
copolymer (COC) substrate, TAC (triacetylcellulose) substrate,
polyvinyl alcohol substrate, polyimide (PI) substrate,
polyethyleneterephthalate (PET) substrate, and
polyethylenenaphthalate (PEN) substrate, etc.
[0042] Further, the method to form the pattern of step 1) is
selected from the group consisting of microcontact printing,
photolithography, imprint method, inkjet printing, and dispensing,
but not always limited thereto.
[0043] At this time, the method to form the pattern of step 1) can
be composed of the following steps:
[0044] preparing a polymer mold in which a convex part and a
concave part are formed (step a);
[0045] preparing a polymer solution containing a perfluorinated
polymer (step b);
[0046] forming a polymer layer on the surface of the convex part of
the polymer mold by spreading the polymer solution prepared in step
b) on the polymer mold prepared in step a) (step c); and
[0047] transcribing the polymer layer formed on the surface of the
convex part of the polymer mold by contacting the polymer mold
having the polymer layer formed in step c) with the substrate (step
d).
[0048] Particularly, step a) is to prepare a polymer mold in which
a convex part and a concave part are formed.
[0049] More specifically, step a) is to prepare a polymer mold with
a convex part and a concave part formed therein in order to create
a wanted pattern. At this time, the polymer mold can be prepared by
using a proper template and the gap between the convex part and the
concave part, and width and depth of them can be regulated to make
a wanted pattern of the polymer mold.
[0050] The preparation of the polymer mold of step a) is also
accomplished by spreading a polymer on the master, the template
with pattern formed therein. At this time, in the pattern of the
polymer mold, lines are evenly formed at the intervals of
0.5.about.50 .mu.m in the thickness of 0.1.about.10 .mu.m. The
height of the line is 0.1.about.10 .mu.m, but not always limited
thereto, and in fact the polymer mold can have a variety of
patterns according to the patterns of the master, the template.
[0051] Further, the polymer mold of step a) can be
hard-polydimethylsiloxane (h-PDMS) mold or
soft-polydimethylsiloxane (s-PDMS) mold, but
hard-polydimethylsiloxane mold is more preferred.
[0052] Next, step b) is to prepare a polymer solution containing
the perfluorinated polymer.
[0053] Particularly, step b) is to prepare a polymer solution to
form a polymer layer on the mold prepared in step a) by dissolving
the perfluorinated polymer in a solvent.
[0054] At this time, the polymer solution of step b) can include a
fluoro solvent, and the fluoro solvent can be hydrofluoroether
(HFE), hydrofluorocarbon, perfluorocarbon, and highly fluorinated
aromatic solvent, but any solvent that can dissolve the
perfluorinated polymer can be used without limitation.
[0055] The concentration of the perfluorinated polymer of step b)
is preferably 1.about.50 weight % by the total weight of the
polymer solution. If the concentration of the perfluorinated
polymer of step b) is less than 1 weight % by the total weight of
the polymer solution, it is difficult to spread the polymer
solution on the polymer mold to form a polymer layer, more
precisely difficult to form a polymer layer evenly on the surface
of the convex part of the polymer mold. It is also difficult with
that concentration to use the formed pattern as a mask because the
thickness of the formed layer would be several nm. On the other
hand, if the concentration is more than 50 weight %, it is
difficult to spread it evenly because of the excessive polymer.
[0056] Next, step c) is to form a polymer layer on the surface of
the convex part of the polymer mold by spreading the polymer
solution prepared in step b) on the polymer mold prepared in step
a).
[0057] Microcontact printing is performed based on the difference
of adhesion force among materials (a polymer mold, a polymer to
form a pattern, and a substrate). When the difference of adhesion
force between a mold and a polymer and between a polymer and a
substrate is big, transcription can be successfully accomplished.
The said adhesion force is related to surface energy of each
material. To change the surface energy, a mold is treated with
oxygen plasma or coated with a specific chemical solution. However,
in the case of a device requiring an organic substrate, such
surface treatment might affect the organic substrate to reduce
properties of the device.
[0058] The said method facilitates patterning without any
additional surface treatment. To do so in this invention, a polymer
layer is formed on the surface of the convex part of the polymer
mold by using the polymer mold prepared in step a) and the
perfluorinated polymer having weak adhesion force.
[0059] Particularly, the method for spreading in step c) is not
limited to a specific one as long as it can form a polymer layer
evenly, but spin coating is preferred. At this time, the spin
coating is performed at 500.about.3,000 rpm for 10.about.120
seconds.
[0060] Next, step d) is to transcribe the polymer layer formed on
the surface of the convex part of the polymer mold by contacting
the polymer mold with the polymer layer formed thereon with a
substrate.
[0061] In step d), the polymer mold with the polymer layer composed
of the perfluorinated polymer is contacted with a substrate by
microcontact printing, that is, a pattern is fabricated by
transcribing the polymer layer formed on the surface of the convex
part of the polymer mold on a substrate.
[0062] The substrate of step d) can be any substrate as long as it
has excellent adhesiveness with the perfluorinated polymer, but is
preferably exemplified by silicone substrate, glass substrate, poly
methyl methacrylate (PMMA) substrate, poly vinyl pirrolidone (PVP)
substrate, polystyrene (PS) substrate, polycarbonate (PC)
substrate, polyethersulfone (PES) substrate, cyclic olefin
copolymer (COC) substrate, TAC (triacetylcellulose) substrate,
polyvinyl alcohol substrate, polyimide (PI) substrate,
polyethyleneterephthalate (PET) substrate, and
polyethylenenaphthalate (PEN) substrate, etc.
[0063] At this time, the transcription of the polymer layer in step
d) is accomplished by taking advantage of the difference of
adhesion force between the polymer mold and the polymer layer and
between the polymer layer and the substrate. When the difference of
adhesion force between them is big, transcription can be
successfully accomplished to fabricate the pattern on the
substrate.
[0064] The thickness of the polymer pattern formed by the
transcription performed in step d) is preferably 50.about.500 nm.
The thickness of the pattern fabricated by the transcription in
step d) is the same as the thickness of the polymer layer layered
on the surface of the convex part of the polymer mold, which is
50.about.500 nm.
[0065] Further, the method to form the pattern of step 1) is
exemplified by another procedure comprising the following
steps:
[0066] preparing a polymer mold in which a convex part and a
concave part are formed (step a);
[0067] preparing a polymer solution containing a perfluorinated
polymer (step b);
[0068] forming a polymer layer in the concave part of the polymer
mold by spreading the polymer solution prepared in step b) on the
polymer mold prepared in step a) (step c); and
[0069] transcribing the polymer layer formed in the concave part of
the polymer mold by contacting the polymer mold having the polymer
layer formed in step c) with the substrate (step d).
[0070] Particularly, step a) is to prepare a polymer mold in which
a convex part and a concave part are formed.
[0071] More specifically, step a) is to prepare a polymer mold with
a convex part and a concave part formed therein in order to create
a wanted pattern. At this time, the polymer mold can be prepared by
using a proper template and the gap between the convex part and the
concave part, and width and depth of them can be regulated to make
a wanted pattern of the polymer mold.
[0072] The preparation of the polymer mold of step a) can be
accomplished by spreading a polymer on the master, the template
with pattern formed therein. At this time, in the pattern of the
polymer mold, lines are evenly formed at the intervals of
0.5.about.50 .mu.m in the thickness of 0.1.about.10 .mu.m. The
height of the line is 0.1.about.10 .mu.m, but not always limited
thereto, and in fact the polymer mold can have a variety of
patterns according to the patterns of the master, the template.
[0073] Further, the polymer mold of step a) can be
hard-polydimethylsiloxane (h-PDMS) mold or
soft-polydimethylsiloxane (s-PDMS) mold, but
hard-polydimethylsiloxane mold is more preferred.
[0074] Next, step b) is to prepare a polymer solution containing
the perfluorinated polymer.
[0075] Particularly, step b) is to prepare a polymer solution to
form a polymer layer on the mold prepared in step a) by dissolving
the perfluorinated polymer in a solvent.
[0076] At this time, the polymer solution of step b) can include a
fluoro solvent, and the fluoro solvent can be hydrofluoroether
(HFE), hydrofluorocarbon, perfluorocarbon, and highly fluorinated
aromatic solvent, but any solvent that can dissolve the
perfluorinated polymer can be used without limitation.
[0077] The concentration of the perfluorinated polymer of step b)
is preferably 1.about.50 weight % by the total weight of the
polymer solution. If the concentration of the perfluorinated
polymer of step b) is less than 1 weight % by the total weight of
the polymer solution, it is difficult to spread the polymer
solution on the polymer mold to form a polymer layer, more
precisely difficult to form a polymer layer evenly on the surface
of the convex part of the polymer mold. It is also difficult with
that concentration to use the formed pattern as a mask because the
thickness of the formed layer would be several nm. On the other
hand, if the concentration is more than 50 weight %, it is
difficult to spread it evenly because of the excessive polymer.
[0078] Next, step c) is to form a polymer layer in the concave part
of the polymer mold by spreading the polymer solution prepared in
step b) on the polymer mold prepared in step a).
[0079] Microcontact printing is performed based on the difference
of adhesion force among materials (a polymer mold, a polymer to
form a pattern, and a substrate). When the difference of adhesion
force between a mold and a polymer and between a polymer and a
substrate is big, transcription can be successfully accomplished.
The said adhesion force is related to surface energy of each
material. To change the surface energy, a mold is treated with
oxygen plasma or coated with a specific chemical solution. However,
in the case of a device requiring an organic substrate, such
surface treatment might affect the organic substrate to reduce
properties of the device.
[0080] The said method facilitates patterning without any
additional surface treatment. To do so, a polymer layer is formed
in the concave part of the polymer mold in step c) by using the
polymer mold prepared in step a) and the perfluorinated polymer
having weak adhesion force.
[0081] Particularly, the method for spreading in step c) is not
limited to a specific one as long as it can form a polymer layer
evenly, but spin coating is preferred. At this time, the spin
coating is performed at 500.about.3,000 rpm for 10.about.120
seconds.
[0082] Next, step d) is to transcribe the polymer layer formed in
the concave part of the polymer mold by contacting the polymer mold
with the polymer layer formed therein with a substrate, followed by
pressing thereof.
[0083] In step d), the polymer mold with the polymer layer composed
of the perfluorinated polymer is contacted with a substrate by
microcontact printing, and then the polymer layer formed in the
concave part of the polymer mold is transcribed on the substrate
with pressure to fabricate a pattern.
[0084] The substrate of step d) can be any substrate as long as it
has excellent adhesiveness with poly(perfluoroalkyl methacrylate)
or poly(perfluoroalkyl acrylate, but is preferably exemplified by
silicone substrate, glass substrate, poly methyl methacrylate
(PMMA) substrate, poly vinyl pirrolidone (PVP) substrate,
polystyrene (PS) substrate, polycarbonate (PC) substrate,
polyethersulfone (PES) substrate, cyclic olefin copolymer (COC)
substrate, TAC (triacetylcellulose) substrate, polyvinyl alcohol
substrate, polyimide (PI) substrate, polyethyleneterephthalate
(PET) substrate, and polyethylenenaphthalate (PEN) substrate,
etc.
[0085] In step d), the pressure given to the polymer mold is
0.1.about.5.0 Mpa. If the pressure given to the polymer mold in
step d) is less than 0.1 Mpa, it is difficult to accomplish the
transcription of the perfluorinated polymer in the polymer mold. If
the pressure given to the polymer mold is more than 5.0 Mpa, the
polymer pattern formed thereon is slightly crushed or the polymer
mold becomes damaged.
[0086] At this time, the transcription of the polymer layer in step
d) is accomplished by taking advantage of the difference of
adhesion force between the polymer mold and the polymer layer and
between the polymer layer and the substrate. When the difference of
adhesion force between them is big, transcription can be
successfully accomplished to fabricate the pattern on the
substrate.
[0087] The thickness of the polymer pattern fabricated by the
transcription in step d) is preferably 0.1.about.10 .mu.m. The
thickness of the fluoro-polymer formed in the concave part of the
polymer mold can be properly regulated by the depth of the concave
part of the polymer mold, by which a thick polymer pattern can be
fabricated.
[0088] Further, the method to form the pattern of step 1) is
exemplified by another procedure comprising the following
steps:
[0089] preparing a polymer mold in which a convex part and a
concave part are formed (step a);
[0090] preparing a polymer solution containing a perfluorinated
polymer (step b);
[0091] forming a polymer layer on the surface of the convex part
and in the concave part of the polymer mold by spreading the
polymer solution prepared in step b) on the polymer mold prepared
in step a) (step c);
[0092] transcribing the polymer layer formed on the surface of the
convex part of the polymer mold by contacting the polymer mold
having the polymer layer formed in step c) with the substrate (step
d); and
[0093] transcribing the polymer layer formed in the concave part of
the polymer mold by contacting the polymer mold finished with step
d) with a new substrate and pressing thereof (step e).
[0094] Particularly, step a) is to prepare a polymer mold in which
a convex part and a concave part are formed.
[0095] More specifically, step a) is to prepare a polymer mold with
a convex part and a concave part formed therein in order to create
a wanted pattern. At this time, the polymer mold can be prepared by
using a proper template and the gap between the convex part and the
concave part, and width and depth of them can be regulated to make
a wanted pattern of the polymer mold.
[0096] The preparation of the polymer mold of step a) can be
accomplished by spreading a polymer on the master, the template
with pattern formed therein. At this time, in the pattern of the
polymer mold, lines are evenly formed at the intervals of
0.5.about.50 .mu.m in the thickness of 0.1.about.10 .mu.m. The
height of the line is 0.1.about.10 .mu.m, but not always limited
thereto, and in fact the polymer mold can have a variety of
patterns according to the patterns of the master, the template.
[0097] Further, the polymer mold of step a) can be
hard-polydimethylsiloxane (h-PDMS) mold or
soft-polydimethylsiloxane (s-PDMS) mold, but
hard-polydimethylsiloxane mold is more preferred.
[0098] Next, step b) is to prepare a polymer solution containing
the perfluorinated polymer.
[0099] Particularly, step b) is to prepare a polymer solution to
form a polymer layer on the mold prepared in step a) by dissolving
the perfluorinated polymer in a solvent.
[0100] At this time, the polymer solution of step b) can include a
fluoro solvent, and the fluoro solvent can be hydrofluoroether
(HFE), hydrofluorocarbon, perfluorocarbon, and highly fluorinated
aromatic solvent, but any solvent that can dissolve the
perfluorinated polymer can be used without limitation.
[0101] The concentration of the perfluorinated polymer of step b)
is preferably 1.about.50 weight % by the total weight of the
polymer solution. If the concentration of the perfluorinated
polymer of step b) is less than 1 weight % by the total weight of
the polymer solution, it is difficult to spread the polymer
solution on the polymer mold to form a polymer layer, more
precisely difficult to form a polymer layer evenly on the surface
of the convex part of the polymer mold. It is also difficult with
that concentration to use the formed pattern as a mask because the
thickness of the formed layer would be several nm. On the other
hand, if the concentration is more than 50 weight %, it is
difficult to spread it evenly because of the excessive polymer.
[0102] Next, step c) is to form a polymer layer on the surface of
the convex part and in the concave part of the polymer mold by
spreading the polymer solution prepared in step b) on the polymer
mold prepared in step a).
[0103] Microcontact printing is performed based on the difference
of adhesion force among each material (a polymer mold, a polymer to
form a pattern, and a substrate). When the difference of adhesion
force between a mold and a polymer and between a polymer and a
substrate is big, transcription can be successfully accomplished.
The said adhesion force is related to surface energy of each
material. To change the surface energy, a mold is treated with
oxygen plasma or coated with a specific chemical solution. However,
in the case of a device requiring an organic substrate, such
surface treatment might affect the organic substrate to reduce
properties of the device.
[0104] The said method facilitates patterning without any
additional surface treatment. To do so, a polymer layer is formed
on the surface of the convex part and in the concave part of the
polymer mold in step c) by using the polymer mold prepared in step
a) and the perfluorinated polymer having weak adhesion force.
[0105] Particularly, the method for spreading in step c) is not
limited to a specific one as long as it can form a polymer layer
evenly, but spin coating is preferred. At this time, the spin
coating is performed at 500.about.3,000 rpm for 10.about.120
seconds.
[0106] Next, step d) is to transcribe the polymer layer on the
surface of the convex part of the polymer mold by contacting the
polymer mold with the polymer layer formed in step c) with a
substrate.
[0107] In step d), the polymer mold with the polymer layer composed
of the perfluorinated polymer is contacted with a substrate by
microcontact printing to transcribe the polymer layer formed on the
surface of the convex part of the polymer mold to fabricate a
pattern.
[0108] The substrate of step d) can be any substrate as long as it
has excellent adhesiveness with the perfluorinated polymer, but is
preferably exemplified by silicone substrate, glass substrate, poly
methyl methacrylate (PMMA) substrate, poly vinyl pirrolidone (PVP)
substrate, polystyrene (PS) substrate, polycarbonate (PC)
substrate, polyethersulfone (PES) substrate, cyclic olefin
copolymer (COC) substrate, TAC (triacetylcellulose) substrate,
polyvinyl alcohol substrate, polyimide (PI) substrate,
polyethyleneterephthalate (PET) substrate, and
polyethylenenaphthalate (PEN) substrate, etc.
[0109] At this time, the transcription of the polymer layer in step
d) is accomplished by taking advantage of the difference of
adhesion force between the polymer mold and the polymer layer and
between the polymer layer and the substrate. When the difference of
adhesion force between them is big, transcription can be
successfully accomplished to fabricate the pattern on the
substrate.
[0110] The thickness of the polymer pattern formed by the
transcription performed in step d) is preferably 10.about.500 nm.
The thickness of the pattern fabricated by the transcription in
step d) is the same as the thickness of the polymer layer layered
on the surface of the convex part of the polymer mold, which is
10.about.500 nm.
[0111] Next, step e) is to transcribe the polymer layer formed in
the concave part of the polymer mold by contacting the polymer mold
finished with step d) with a new substrate and pressing
thereof.
[0112] In step e), the polymer mold with the polymer layer composed
of the perfluorinated polymer is contacted with a substrate by
microcontact printing, and then the polymer layer formed in the
concave part of the polymer mold is transcribed on a new substrate
with pressure to fabricate a pattern.
[0113] The substrate of step e) can be any substrate as long as it
has excellent adhesiveness with the perfluorinated polymer, but is
preferably exemplified by silicone substrate, glass substrate, poly
methyl methacrylate (PMMA) substrate, poly vinyl pirrolidone (PVP)
substrate, polystyrene (PS) substrate, polycarbonate (PC)
substrate, polyethersulfone (PES) substrate, cyclic olefin
copolymer (COC) substrate, TAC (triacetylcellulose) substrate,
polyvinyl alcohol substrate, polyimide (PI) substrate,
polyethyleneterephthalate (PET) substrate, and
polyethylenenaphthalate (PEN) substrate, etc.
[0114] In step e), the pressure given to the polymer mold is
0.1.about.5.0 Mpa. If the pressure given to the polymer mold in
step e) is less than 0.1 Mpa, it is difficult to accomplish the
transcription of the perfluorinated polymer in the polymer mold. If
the pressure given to the polymer mold is more than 5.0 Mpa, the
polymer pattern formed thereon is slightly crushed or the polymer
mold becomes damaged.
[0115] At this time, the transcription of the polymer layer in step
e) is accomplished by taking advantage of the difference of
adhesion force between the polymer mold and the polymer layer and
between the polymer layer and the substrate. When the difference of
adhesion force between them is big, transcription can be
successfully accomplished to fabricate the pattern on the
substrate.
[0116] The thickness of the polymer pattern fabricated by the
transcription in step e) is preferably 0.1.about.10 .mu.m. The
thickness of the fluoro-polymer formed in the concave part of the
polymer mold can be properly regulated by the depth of the concave
part of the polymer mold, by which a thick polymer pattern can be
fabricated.
[0117] Further, the method to form the pattern of step 1) is
exemplified by another procedure comprising the following
steps:
[0118] preparing a polymer solution containing a perfluorinated
polymer (step a); and
[0119] fabricating a perfluorinated polymer thin layer pattern on a
substrate with the polymer solution prepared in step a) by
ink-jetting (step b).
[0120] Particularly, step a) is to prepare a polymer solution
containing the perfluorinated polymer.
[0121] In step a), to form the perfluorinated polymer thin layer, a
polymer solution comprising the perfluorinated polymer is
prepared.
[0122] At this time, the polymer solution of step a) can include a
fluoro solvent, and the fluoro solvent can be hydrofluoroether
(HFE), hydrofluorocarbon, perfluorocarbon, and highly fluorinated
aromatic solvent, but any solvent that can dissolve the
perfluorinated polymer can be used without limitation.
[0123] The concentration of the perfluorinated polymer of step a)
is preferably 1.about.50 weight % by the total weight of the
polymer solution. If the concentration of the perfluorinated
polymer of step a) is less than 1 weight % by the total weight of
the polymer solution, the thickness of the polymer thin layer
formed by spreading the polymer solution on the substrate would be
a few nm, so that it is difficult to use the pattern as a mask. On
the contrary, if the concentration is more than 50 weight %,
viscosity increases owing to the excessive polymer, which troubles
inkjet printing.
[0124] Next, step b) is to fabricate a perfluorinated polymer thin
layer pattern on top of the substrate by using the polymer solution
prepared in step a) as an inkjet printing solution.
[0125] The substrate of step b) can be any substrate as long as it
has excellent adhesiveness with the perfluorinated polymer, but is
preferably exemplified by silicone substrate, glass substrate, poly
methyl methacrylate (PMMA) substrate, poly vinyl pirrolidone (PVP)
substrate, polystyrene (PS) substrate, polycarbonate (PC)
substrate, polyethersulfone (PES) substrate, cyclic olefin
copolymer (COC) substrate, TAC (triacetylcellulose) substrate,
polyvinyl alcohol substrate, polyimide (PI) substrate,
polyethyleneterephthalate (PET) substrate, and
polyethylenenaphthalate (PEN) substrate, etc.
[0126] Further, the method to form the pattern of step 1) is
exemplified by another procedure comprising the following
steps:
[0127] preparing a polymer solution containing a perfluorinated
polymer (step a); and
[0128] fabricating a polymer pattern on a substrate with the
polymer solution prepared in step a) by dispensing (step b).
[0129] Particularly, step a) is to prepare a polymer solution
containing the perfluorinated polymer.
[0130] In step a), to form the perfluorinated polymer thin layer, a
polymer solution comprising the perfluorinated polymer is
prepared.
[0131] At this time, the polymer solution of step a) can include a
fluoro solvent, and the fluoro solvent can be hydrofluoroether
(HFE), hydrofluorocarbon, perfluorocarbon, and highly fluorinated
aromatic solvent, but any solvent that can dissolve the
perfluorinated polymer can be used without limitation.
[0132] The concentration of the perfluorinated polymer of step a)
is preferably 1.about.50 weight % by the total weight of the
polymer solution. If the concentration of the perfluorinated
polymer of step a) is less than 1 weight % by the total weight of
the polymer solution, the thickness of the formed pattern would be
a few nm, so that it is difficult to use the pattern as a mask. On
the contrary, if the concentration is more than 50 weight %,
spreading is hard to be accomplished due to the excessive
polymer.
[0133] Next, step b) is to fabricate a polymer pattern on a
substrate with the polymer solution prepared in step a) by
dispensing.
[0134] The substrate of step b) can be any substrate as long as it
has excellent adhesiveness with the perfluorinated polymer, but is
preferably exemplified by silicone substrate, glass substrate, poly
methyl methacrylate (PMMA) substrate, poly vinyl pirrolidone (PVP)
substrate, polystyrene (PS) substrate, polycarbonate (PC)
substrate, polyethersulfone (PES) substrate, cyclic olefin
copolymer (COC) substrate, TAC (triacetylcellulose) substrate,
polyvinyl alcohol substrate, polyimide (PI) substrate,
polyethyleneterephthalate (PET) substrate, and
polyethylenenaphthalate (PEN) substrate, etc.
[0135] Also, the method to form the pattern of step 1) is
exemplified by another procedure comprising the following
steps:
[0136] preparing a polymer solution containing a perfluorinated
polymer (step a);
[0137] forming a perfluorinated polymer thin layer on a substrate
by spreading the polymer solution prepared in step a) on top of the
substrate (step b);
[0138] layering the patterned mask on top of the perfluorinated
polymer thin layer formed in step b), followed by UV-irradiation
(step c); and
[0139] eliminating the non-irradiated part in step c) by using a
solvent (step d).
[0140] Particularly, step a) is to prepare a polymer solution
containing the perfluorinated polymer.
[0141] In step a), to form the perfluorinated polymer thin layer, a
polymer solution comprising the perfluorinated polymer is
prepared.
[0142] At this time, the polymer solution of step a) can include a
fluoro solvent, and the fluoro solvent can be hydrofluoroether
(HFE), hydrofluorocarbon, perfluorocarbon, and highly fluorinated
aromatic solvent, but any solvent that can dissolve the
perfluorinated polymer can be used without limitation.
[0143] The perfluorinated polymer of step a) can be any copolymer
including most of monomers that are able to form image pattern with
perfluoroalkyl methacrylate monomer by UV irradiation.
[0144] The concentration of the perfluorinated polymer of step a)
is preferably 1.about.50 weight % by the total weight of the
polymer solution. If the concentration of the perfluorinated
polymer of step a) is less than 1 weight % by the total weight of
the polymer solution, it is difficult to spread the polymer
solution on the polymer mold to form a polymer layer. More
precisely, it is difficult to form a polymer layer evenly on the
surface of the convex part of the polymer mold. It is also
difficult with that concentration to use the formed pattern as a
mask because the thickness of the formed layer would be several nm.
On the other hand, if the concentration is more than 50 weight %,
it is difficult to spread it evenly because of the excessive
polymer.
[0145] Next, step b) is to form a perfluorinated polymer thin layer
by spreading the polymer solution prepared in step a) on top of the
substrate.
[0146] In step b), the polymer solution is spread on top of the
substrate by the conventional coating method to form the
perfluorinated polymer thin layer thereon.
[0147] Particularly, the method for spreading in step b) is not
limited to a specific one as long as it can form a polymer layer
evenly, but spin coating is preferred. At this time, the spin
coating is performed at 500.about.3,000 rpm for 10.about.120
seconds.
[0148] Next in step c), the patterned mask is layered on top of the
perfluorinated polymer thin layer formed in step b), followed by
UV-irradiation.
[0149] To form a perfluorinated polymer pattern by
photolithography, in step c), the patterned mask is layered on top
of the perfluorinated polymer thin layer formed in step b),
followed by UV-irradiation selectively on the perfluorinated
polymer thin layer.
[0150] Next, step d) is to eliminate the non-irradiated part of
step c) by using a solvent.
[0151] In step d), a perfluorinated polymer pattern is formed after
eliminating the non-irradiated part of the perfluorinated polymer
thin layer by using a solvent.
[0152] At this time, the solvent of step d) is not limited as long
as it can eliminate the perfluorinated polymer. For example, the
solvent of step d) can include a fluoro solvent, and the fluoro
solvent can be hydrofluoroether (HFE), hydrofluorocarbon,
perfluorocarbon, and highly fluorinated aromatic solvent.
[0153] The thickness of the perfluorinated polymer pattern of step
d) can be 50 nm.about.10 .mu.m and the thickness varies from the
preparation methods.
[0154] The method to form the pattern of step 1) is also
exemplified by another procedure comprising the following
steps:
[0155] preparing a polymer solution containing a perfluorinated
polymer (step a);
[0156] forming a perfluorinated polymer thin layer on top of the
polymer mold by spreading the polymer solution prepared in step a)
thereon (step b);
[0157] layering the patterned mask on top of the perfluorinated
polymer thin layer formed in step b), followed by UV-irradiation
(step c);
[0158] eliminating the non-irradiated part in step c) by using a
solvent (step d); and
[0159] transcribing the pattern formed in step d) on the polymer
mold by contacting the pattern with a substrate (step e).
[0160] Particularly, step a) is to prepare a polymer solution
containing the perfluorinated polymer.
[0161] In step a), to form the perfluorinated polymer thin layer, a
polymer solution comprising the perfluorinated polymer is
prepared.
[0162] At this time, the polymer solution of step a) can include a
fluoro solvent, and the fluoro solvent can be hydrofluoroether
(HFE), hydrofluorocarbon, perfluorocarbon, and highly fluorinated
aromatic solvent, but any solvent that can dissolve the
perfluorinated polymer can be used without limitation.
[0163] The perfluorinated polymer of step a) can be any copolymer
including most of monomers that are able to form image pattern with
perfluoroalkyl methacrylate monomer by UV irradiation.
[0164] The concentration of the perfluorinated polymer of step a)
is preferably 1.about.50 weight % by the total weight of the
polymer solution. If the concentration of the perfluorinated
polymer of step a) is less than 1 weight % by the total weight of
the polymer solution, it is difficult to spread the polymer
solution on the polymer mold to form a polymer layer. More
precisely, it is difficult to form a polymer layer evenly on the
surface of the convex part of the polymer mold. It is also
difficult with that concentration to use the formed pattern as a
mask because the thickness of the formed layer would be several nm.
On the other hand, if the concentration is more than 50 weight %,
it is difficult to spread it evenly because of the excessive
polymer.
[0165] Next, step b) is to form a perfluorinated polymer thin layer
by spreading the polymer solution prepared in step a) on top of the
polymer mold.
[0166] In step b), a perfluorinated polymer thin layer is formed on
top of the polymer mold by spreading the polymer solution prepared
in step a) thereon.
[0167] At this time, the polymer mold of step b) can be any plain
polymer mold without any pattern, for example
hard-polydimethylsiloxane (h-PDMS) mold or
soft-polydimethylsiloxane (s-PDMS) mold, but
hard-polydimethylsiloxane mold is more preferred.
[0168] Particularly, the method for spreading in step b) is not
limited to a specific one as long as it can form a polymer layer
evenly, but spin coating is preferred. At this time, the spin
coating is performed at 500.about.3,000 rpm for 10.about.120
seconds.
[0169] Next in step c), the patterned mask is layered on top of the
perfluorinated polymer thin layer formed in step b), followed by
UV-irradiation.
[0170] To form a perfluorinated polymer pattern by
photolithography, in step c), the patterned mask is layered on top
of the perfluorinated polymer thin layer formed in step b),
followed by UV-irradiation selectively on the perfluorinated
polymer thin layer.
[0171] Next, step d is to fabricate a pattern by eliminating the
non-irradiated part in step c) by using a solvent.
[0172] In step d), a perfluorinated polymer pattern is formed after
eliminating the non-irradiated part of the perfluorinated polymer
thin layer by using a solvent.
[0173] At this time, the solvent of step d) is not limited as long
as it can eliminate the perfluorinated polymer. For example, the
solvent of step d) can include a fluoro solvent, and the fluoro
solvent can be hydrofluoroether (HFE), hydrofluorocarbon,
perfluorocarbon, and highly fluorinated aromatic solvent.
[0174] Step e) is to transcribe the pattern fabricated in step d)
on the surface of the polymer mold by contacting the pattern with a
substrate.
[0175] In step e), the pattern formed on the surface of the polymer
mold is transcribed on a substrate by contacting the pattern with
the substrate to minimize the damage on the substrate.
[0176] The substrate of step e) can be any substrate as long as it
has excellent adhesiveness with the perfluorinated polymer, but is
preferably exemplified by silicone substrate, glass substrate, poly
methyl methacrylate (PMMA) substrate, poly vinyl pirrolidone (PVP)
substrate, polystyrene (PS) substrate, polycarbonate (PC)
substrate, polyethersulfone (PES) substrate, cyclic olefin
copolymer (COC) substrate, TAC (triacetylcellulose) substrate,
polyvinyl alcohol substrate, polyimide (PI) substrate,
polyethyleneterephthalate (PET) substrate, and
polyethylenenaphthalate (PEN) substrate, etc.
[0177] At this time, the transcription of the polymer layer in step
e) is accomplished by taking advantage of the difference of
adhesion force between the polymer mold and the perfluorinated
polymer pattern and between the perfluorinated polymer pattern and
the substrate. When the difference of adhesion force between them
is big, transcription can be successfully accomplished to fabricate
the pattern on the substrate.
[0178] As described hereinbefore, the perfluorinated polymer
pattern can be fabricated by a variety of methods and at this time
the thickness of the pattern is 50 nm.about.10 .mu.m, suggesting
that patterns with different thicknesses can be fabricated
according to diverse methods.
[0179] In the method for fabricating nano material pattern of the
present invention, step 2) is to spread the dispersion containing
nano material dispersed therein on the substrate having the pattern
of step 1) fabricated thereon.
[0180] In step 2), the dispersion containing nano material
dispersed therein is spread on the substrate on which the
perfluorinated polymer pattern was fabricated in step 1) so as to
spread the nano material included in the dispersion on the area
where the perfluorinated polymer pattern has not been
fabricated.
[0181] Particularly, the nano material of step 2 is exemplified by
metal nano wire, oxide nano wire, carbon nano tube, graphene, metal
nano particle, and oxide nano particle, etc.
[0182] The dispersion of step 2) can be any solvent that is able to
disperse nano material, and alcohols are the examples. More
precisely, isopropylalcohol (IPA) and ethanol are preferred
examples. The solvent used for making the dispersion of step 2) is
preferably the one that does not dissolve the perfluorinated
polymer pattern.
[0183] In the method for fabricating nano material pattern of the
present invention, step 3) is to eliminate the perfluorinated
polymer pattern fabricated on the substrate in step 2).
[0184] To fabricate a nano material pattern by the conventional
lift-off technique, such a solvent as acetone is used to eliminate
a polymer pattern. At this time, exfoliation of nano material
caused by the solvent like acetone is a problem.
[0185] Therefore, in this invention, such a solvent that does not
exfoliate nano material is used. By using the solvent that does not
exfoliate nano material, the perfluorinated polymer pattern is
eliminated to fabricate a nano material pattern. As a result, an
excellent nano material pattern can be fabricated.
[0186] Particularly, the perfluorinated polymer pattern can be
eliminated by using a solvent in step 3). At this time, the solvent
is preferably a fluoro solvent. The fluoro solvent can be
hydrofluoroether (HFE), hydrofluorocarbon, perfluorocarbon, and
highly fluorinated aromatic solvent, but any solvent that can
dissolve the perfluorinated polymer can be used without
limitation.
[0187] The present invention also provides a method for fabricating
nano material pattern comprising the following steps:
[0188] forming a perfluorinated polymer pattern on top of the
substrate (step 1);
[0189] spreading a dispersion containing the dispersed nano
material and a functional material on the substrate patterned in
step 1) (step 2); and
[0190] eliminating the perfluorinated polymer pattern formed on the
substrate of step 2) (step 3).
[0191] Hereinafter, the method for fabricating nano material
pattern of the present invention is described in more detail, step
by step.
[0192] First, in the method for fabricating nano material pattern
of the invention, step 1) is to form a perfluorinated polymer
pattern on top of the substrate. This procedure is as described
above, so that the explanation is not repeated herein.
[0193] Next, in the method for fabricating nano material pattern of
the invention, step 2) is to spread the dispersion containing nano
material dispersed therein and the functional material on the
substrate patterned in step 1).
[0194] In step 2), the dispersion containing nano material
dispersed therein and the functional material are spread on the
substrate on which the perfluorinated polymer pattern was
fabricated in step 1) so as to spread them on the area where the
perfluorinated polymer pattern has not been fabricated.
[0195] Particularly, to spread the dispersion containing nano
material dispersed therein and the functional material on the
substrate in step 2), one of the following methods can be used; the
dispersion containing nano material dispersed therein is spread
first and then the functional material is spread; the functional
material is first spread and then the dispersion containing nano
material dispersed therein is spread thereon; or the functional
material is spread and then the dispersion containing nano material
dispersed therein is layered and then the functional material is
spread thereon again.
[0196] For example, the nano material pattern can be formed by the
processes of spreading the dispersion containing nano material
dispersed therein and then spreading the functional material, by
which the nano material pattern has the structure in which the nano
material and the functional material are layered in that order. The
nano material pattern can also be formed by the processes of
spreading the functional material first and then spreading the
dispersion containing nano material dispersed therein, by which the
nano material pattern has the structure in which the functional
material and the nano material are layered in that order.
[0197] The nano material pattern can also be generated by the
processes of spreading the functional material, spreading the
dispersion containing nano material dispersed therein, and then
spreading the functional material again, resulting in the nano
material pattern having the structure in which functional
material/nano material/functional material are layered in that
order.
[0198] Particularly, the nano material of step 2) is exemplified by
metal nano wire, oxide nano wire, carbon nano tube, graphene, metal
nano particle, and oxide nano particle, etc.
[0199] The dispersion of step 2) can be any solvent that is able to
disperse nano material, and alcohols are the examples. More
precisely, isopropylalcohol (IPA) and ethanol are preferred
examples. The solvent used for making the dispersion of step 2) is
preferably the one that does not dissolve the perfluorinated
polymer pattern.
[0200] Further, the functional material of step 2) is selected from
the group consisting of inorganic substances such as metal oxides,
and organic substances such as conducting polymers, UV curable
polymers, thermal curable polymers, and dielectric polymers. In
addition to the said organic substances, antioxidants or nano
particles can also be included.
[0201] For example, the conducting polymer herein can be selected
from the group consisting of
poly(3,4-ethylenedioxythiophene)polystyrene sulfonate (PEDOT:PSS),
polyaniline, polyacetylene, polypyrrole, polythiophene,
poly(3-alkyl thiophene) (P3AT), polyphenylene, polyfuran, and
polyphenylene sulfide.
[0202] The UV curable polymer herein can be bisphenol A-type epoxy
resin or polyurethane. The thermal curable polymer can be phenol
resin, epoxy resin, or unsaturated polyester resin. The said
dielectric polymer can be selected from the group consisting of
polymethyl methacrylate (PMMA), polyvinylpyrrolidone (PVP),
polyethylene (PE), polyvinyl chloride (PVC), polyvinylidene
fluoride (PVDF), polytetrafluoroethylene (PTFE), perfluoroalkoxy
(PFA), and nylon, but not always limited thereto.
[0203] In the spreading of step 2), the inorganic substance such as
metal oxide can be spread by plasma deposition. The organic
substance can be spread by spin coating, spray coating, dip
coating, or dispensing, but not always limited thereto and any
method applicable for the spreading a functional material
(inorganic substance or organic substance) can be used without
limitation.
[0204] After spreading the functional material in step 2),
post-treatment such as UV irradiation or heat treatment can be
performed according to the characteristics of the functional
material.
[0205] Further, the substrate can be etched before the coating with
the nano material and the functional material of step 2) in order
to make some room for the nano material and the functional material
to be inserted. The substrate etching can be accomplished by Dry or
Wet method according to the properties of the substrate used.
[0206] Next, in the method for fabricating nano material pattern of
the invention, step 3) is to eliminate the perfluorinated polymer
pattern formed on the substrate in step 2). This procedure is as
described above, so that the explanation is not repeated
herein.
[0207] The present invention also provides a method for fabricating
nano material pattern comprising the following steps:
[0208] forming a perfluorinated polymer pattern on top of the
substrate (step 1);
[0209] spreading a dispersion containing the dispersed nano
material on the substrate patterned in step 1) (step 2)
[0210] eliminating the perfluorinated polymer pattern formed on the
substrate of step 2) (step 3); and
[0211] inserting the nano material pattern formed by eliminating
the perfluorinated polymer pattern in step 3 into the inside of the
substrate (step 4).
[0212] Hereinafter, the method for fabricating nano material
pattern of the present invention is described in more detail, step
by step.
[0213] First, in the method for fabricating nano material pattern
of the invention, step 1) is to form a perfluorinated polymer
pattern on top of the substrate. This procedure is as described
above, so that the explanation is not repeated herein.
[0214] Next, in the method for fabricating nano material pattern of
the invention, step 2) is to spread the dispersion containing nano
material dispersed therein on the substrate patterned in step 1).
This procedure is as described above, so that the explanation is
not repeated herein.
[0215] Next, in the method for fabricating nano material pattern of
the invention, step 3) is to eliminate the perfluorinated polymer
pattern formed on the substrate in step 2). This procedure is as
described above, so that the explanation is not repeated
herein.
[0216] In the method for fabricating nano material pattern of the
invention, step 4) is to insert the nano material pattern formed
after eliminating the perfluorinated polymer pattern in step 3)
into the inside of the substrate.
[0217] Particularly, step 4) is to insert the nano material pattern
remaining after the elimination of the perfluorinated polymer
pattern in step 3) into the substrate.
[0218] In a preferred embodiment of the present invention, to
insert the nano material into the substrate in step 4), when the
substrate of step 1) at this time is an organic substrate,
thermo-compression is given on top of the substrate with the nano
material pattern fabricated thereon, as shown in FIG. 1(a).
[0219] When the substrate of step 1) is an inorganic substrate,
step 4) is accomplished by inserting the nano material pattern into
a new organic substrate by contacting the nano material pattern
generated on the inorganic substrate with the new organic substrate
and then being followed by thermo-compression, as shown in FIG.
1(b).
[0220] At this time, the organic substrate can be selected from the
group consisting of poly methyl methacrylate (PMMA) substrate, poly
vinyl pirrolidone (PVP) substrate, polystyrene (PS) substrate,
polycarbonate (PC) substrate, polyethersulfone (PES), cyclic olefin
copolymer (COC) substrate, TAC (Triacetylcellulose) substrate,
polyvinyl alcohol substrate, polyimide (PI) substrate,
polyethyleneterephthalate (PET) substrate, and
polyethylenenaphthalate (PEN) substrate.
[0221] The present invention also provides a substrate on which a
nano material pattern is fabricated by the above method.
[0222] By using the substrate on which a nano material pattern is
fabricated of the present invention, damage of the substrate and
nano material can be minimized by using a fluoro solvent during the
pattern elimination process. Therefore, this substrate can be
widely applied to the fields requiring organic devices.
[0223] Practical and presently preferred embodiments of the present
invention are illustrative as shown in the following Examples.
[0224] However, it will be appreciated that those skilled in the
art, on consideration of this disclosure, may make modifications
and improvements within the spirit and scope of the present
invention.
Manufacturing Example 1
Preparation of Perfluorinated Polymer Pattern 1
[0225] Step 1: Photoresist master (Photoresist, AZ 7220) was formed
on a silicone substrate, which was then coated with
poly(dimethylsiloxane) (PDMS) by spin coating, followed by
hardening at 120.degree. C. As a result, a polymer mold was
prepared.
[0226] At this time, the polymer mold was soft-polydimethylsiloxane
(s-PDMS, Sylgard 184, Dow Corning) and the pattern was 90 .mu.m
line and space in which the height difference between the convex
part and the concave part was 3 .mu.m.
[0227] Step 2: 1H,1H,2H,2H-perfluorodecyl methacrylate (FDMA) was
dissolved in hydrofluoroether to prepare a mixed solution
containing the polymer at the concentration of 11 weight % by the
total weight of the solution.
[0228] Step 3: The mixed solution prepared in step 2) was spread on
the polymer mold prepared in step 1), followed by spin coating at
1,000 rpm for 30 seconds to form poly(1H,1H,2H,2H-perfluorodecyl
methacrylate) (PFDMA).
[0229] Step 4: The convex part of the polymer mold wherein
poly(1H,1H,2H,2H-perfluorodecyl methacrylate) was formed in step 3)
was contacted with a silicone substrate to fabricate a
poly(1H,1H,2H,2H-perfluorodecyl methacrylate polymer pattern having
the width of 90 .mu.m.
Manufacturing Example 2
Preparation of Perfluorinated Polymer Pattern 2
[0230] Step 1: Photoresist (AZ 7220) patterns in the width of
.mu.m.about.100 .mu.m were formed on a silicone substrate
containing 1 .mu.m thick silicone oxide film and then the silicone
oxide film was dry-etched. The prepared silicone master was coated
with poly(dimethylsiloxane) (PDMS) by spin coating, followed by
hardening at 120.degree. C. As a result, a polymer mold was
prepared.
[0231] At this time, the polymer mold was hard-polydimethylsiloxane
(h-PDMS, HS-8900, HSSTS). The line width of the convex part was
fixed as 50 .mu.m, and the line width of the concave part was 5
.mu.m.about.100 .mu.m. The height difference between the convex
part and the concave part was 1 .mu.m.
[0232] Step 2: 1H,1H,2H,2H-perfluorodecyl methacrylate (FDMA) was
dissolved in hydrofluoroether to prepare a mixed solution
containing the polymer at the concentration of 9 weight % by the
total weight of the solution.
[0233] Step 3: The mixed solution prepared in step 2) was spread on
the polymer mold prepared in step 1), followed by spin coating at
1,000 rpm for 30 seconds to form poly(1H,1H,2H,2H-perfluorodecyl
methacrylate) (PFDMA).
[0234] Step 4: The convex part of the polymer mold wherein
poly(1H,1H,2H,2H-perfluorodecyl methacrylate) was formed in step 3)
was contacted with a glass substrate to fabricate a
poly(1H,1H,2H,2H-perfluorodecyl methacrylate polymer pattern having
the width of 50 .mu.m.
Manufacturing Example 3
Preparation of Perfluorinated Polymer Pattern 3
[0235] Step 1: Photoresist (AZ 4620) patterns in the width of
.mu.m.about.100 .mu.m were formed on a silicone substrate. The
prepared photoresist master was coated with poly(dimethylsiloxane)
(PDMS) by spin coating, followed by hardening at 120.degree. C. As
a result, a polymer mold was prepared.
[0236] At this time, the polymer mold was hard-polydimethylsiloxane
(h-PDMS, HS-8900, HSSTS). The line width of the convex part was
fixed as 50 .mu.m, and the line width of the concave part was 5
.mu.m.about.100 .mu.m. The height difference between the convex
part and the concave part was 5 .mu.m.
[0237] Step 2: 1H,1H,2H,2H-perfluorodecyl methacrylate (FDMA) was
dissolved in hydrofluoroether to prepare a mixed solution
containing the polymer at the concentration of 15 weight % by the
total weight of the solution.
[0238] Step 3: The mixed solution prepared in step 2) was spread on
the polymer mold prepared in step 1), followed by spin coating at
1,000 rpm for 30 seconds to form poly(1H,1H,2H,2H-perfluorodecyl
methacrylate) (PFDMA).
[0239] Step 4: The convex part of the polymer mold wherein
poly(1H,1H,2H,2H-perfluorodecyl methacrylate) was formed in step 3)
was contacted with a polyethylenenaphthalate (PEN) substrate to
fabricate a poly(1H,1H,2H,2H-perfluorodecyl methacrylate polymer
pattern having the width of 50 .mu.m.
Manufacturing Example 4
Preparation of Perfluorinated Polymer Pattern 4
[0240] Step 1: Photoresist (DNR L-300) pattern with a specific
shape was formed on a silicone substrate. The prepared photoresist
master was coated with poly(dimethylsiloxane) (PDMS) by spin
coating, followed by hardening at 120.degree. C. As a result, a
polymer mold was prepared.
[0241] At this time, the polymer mold was (s-PDMS, Sylgard 184, Dow
Corning). The height difference between the convex part and the
concave part was 2 .mu.m.
[0242] Step 2: 1H,1H,2H,2H-perfluorodecyl methacrylate (FDMA) was
dissolved in hydrofluoroether to prepare a mixed solution
containing the polymer at the concentration of 13 weight % by the
total weight of the solution.
[0243] Step 3: The mixed solution prepared in step 2) was spread on
the polymer mold prepared in step 1), followed by spin coating at
1,000 rpm for 30 seconds to form poly(1H,1H,2H,2H-perfluorodecyl
methacrylate) (PFDMA).
[0244] Step 4: The polymer mold wherein
poly(1H,1H,2H,2H-perfluorodecyl methacrylate) was formed in step 3)
was contacted with a silicone substrate to fabricate a
poly(1H,1H,2H,2H-perfluorodecyl methacrylate polymer pattern.
Manufacturing Example 5
Preparation of Perfluorinated Polymer Pattern 5
[0245] Step 1: Photoresist (DNR L-300) pattern was formed on a
silicone substrate. The prepared photoresist master was coated with
poly(dimethylsiloxane) (PDMS) by spin coating, followed by
hardening at 120.degree. C. As a result, a polymer mold was
prepared.
[0246] At this time, the polymer mold was soft-polydimethylsiloxane
(s-PDMS, Sylgard 184, Dow Corning). The width of the convex part
was 5 .mu.m, and the width of the concave part was 8 .mu.m. The
height difference between the convex part and the concave part was
2 .mu.m.
[0247] Step 2: 1H,1H,2H,2H-perfluorodecyl methacrylate (FDMA) was
dissolved in hydrofluoroether to prepare a mixed solution
containing the polymer at the concentration of 13 weight % by the
total weight of the solution.
[0248] Step 3: The mixed solution prepared in step 2) was spread on
the polymer mold prepared in step 1), followed by spin coating at
1,000 rpm for 30 seconds to form poly(1H,1H,2H,2H-perfluorodecyl
methacrylate) (PFDMA).
[0249] Step 4: The convex part of the polymer mold wherein
poly(1H,1H,2H,2H-perfluorodecyl methacrylate) was formed in step 3)
was contacted with a glass substrate to fabricate a
poly(1H,1H,2H,2H-perfluorodecyl methacrylate polymer pattern having
the width of 5 .mu.m.
Manufacturing Example 6
Preparation of Perfluorinated Polymer Pattern 6
[0250] After finishing step 4) of Manufacturing Example 1, the
polymer mold was contacted with a new silicone substrate. Then, 0.2
Mpa of pressure was given to transcribe the
poly(1H,1H,2H,2H-perfluorodecyl methacrylate) formed in the concave
part of the polymer mold on the silicone substrate, resulting in
the fabrication of a polymer pattern.
Manufacturing Example 7
Preparation of Perfluorinated Polymer Pattern 7
[0251] Step 1:
3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl
methacrylate and 2-nitrobenzyl methacrylate were dissolved in
hydrofluoroether (HFE 7600, 3M) to prepare a mixed solution
containing the polymer at the concentration of 10 weight % by the
total weight of the solution.
[0252] Step 2: The mixed solution prepared in step 1) was spread on
a silicone substrate, followed by spin coating at 1,000 rpm for 30
seconds to form fluoro photoresist.
[0253] Step 3: The patterned mask was placed on top of the fluoro
photoresist thin layer formed in step 2), followed by
UV-irradiation.
[0254] Step 4: The non-irradiated perfluorinated polymer in step 3)
was eliminated by using HFE 7200, the fluoro solvent, resulting in
the fabrication of a polymer pattern.
Manufacturing Example 8
Preparation of Perfluorinated Polymer Pattern 8
[0255] Step 1:
3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl
methacrylate and 2-nitrobenzyl methacrylate were dissolved in
hydrofluoroether (HFE 7600, 3M) to prepare a mixed solution
containing the polymer at the concentration of 10 weight % by the
total weight of the solution.
[0256] Step 2: The mixed solution prepared in step 1) was spread on
a silicone substrate, followed by spin coating at 1,000 rpm for 30
seconds to form fluoro photoresist.
[0257] Step 3: The patterned mask was placed on top of the fluoro
photoresist thin layer formed in step 2), followed by
UV-irradiation.
[0258] Step 4: The non-irradiated perfluorinated polymer in step 3)
was eliminated by using HFE 7200, the fluoro solvent, resulting in
the fabrication of a polymer pattern.
[0259] Step 5: A polymer pattern was fabricated by contacting the
substrate having the polymer pattern fabricated in step 4) on a
silicone substrate.
Manufacturing Example 9
Preparation of Perfluorinated Polymer Pattern 9
[0260] A polymer pattern was fabricated by the same manner as
described in Manufacturing Example 4 except that the
poly(1H,1H,2H,2H-perfluorodecyl methacrylate polymer pattern is
generated by contacting with a polyethylenenaphthalate (PEN)
substrate in step 4) of Manufacturing Example 4.
Manufacturing Example 10
Preparation of Perfluorinated Polymer Pattern 10
[0261] A polymer pattern was fabricated by the same manner as
described in Manufacturing Example 4 except that the
poly(1H,1H,2H,2H-perfluorodecyl methacrylate polymer pattern is
generated by contacting with a glass substrate in step 4) of
Manufacturing Example 4.
Example 1
Preparation of Nano Material Pattern 1
[0262] Step 1: The substrate having the pattern fabricated in
Manufacturing Example 1 was prepared.
[0263] Step 2: A dispersion was prepared by adding silver nano wire
to isopropyl alcohol (IPA) at the concentration of 0.5 weight % by
the weight of the total solution and dispersing thereof. The
prepared dispersion was spread on the substrate prepared in step
1).
[0264] Step 3: The perfluorinated polymer pattern on the substrate
spread with the silver nano wire dispersion prepared in step 2) was
eliminated by using HFE 7200, the fluoro solvent, to fabricate a
silver nano wire pattern in the width of 90 .mu.m.
Example 2
Preparation of Nano Material Pattern 2
[0265] A silver nano wire pattern was fabricated by the same manner
as described in Example 1 except that the substrate having the
pattern fabricated in Manufacturing Example 2 was used in step 1)
of Example 1.
Example 3
Preparation of Nano Material Pattern 3
[0266] A silver nano wire pattern was fabricated by the same manner
as described in Example 1 except that the substrate having the
pattern fabricated in Manufacturing Example 3 was used in step 1)
of Example 1.
Example 4
Preparation of Nano Material Pattern 4
[0267] A silver nano wire pattern was fabricated by the same manner
as described in Example 1 except that the substrate having the
pattern fabricated in Manufacturing Example 4 was used in step 1)
of Example 1.
Example 5
Preparation of Nano Material Pattern 5
[0268] Step 1: The substrate having the pattern fabricated in
Manufacturing Example 5 was prepared.
[0269] Step 2: A dispersion was prepared by adding carbon nano tube
to isopropyl alcohol (IPA) at the concentration of 0.5 weight % by
the weight of the total solution and dispersing thereof. The
prepared dispersion was spread on top of the substrate prepared in
step 1).
[0270] Step 3: The perfluorinated polymer pattern on the substrate
spread with the carbon nano tube dispersion in step 2) was
eliminated by using HFE 7300, the fluoro solvent, to fabricate a
carbon nano tube pattern in the width of 8 .mu.m.
Example 6
Preparation of Nano Material Pattern 6
[0271] A silver nano wire pattern was fabricated by the same manner
as described in Example 1 except that the substrate having the
pattern fabricated in Manufacturing Example 6 was used in step 1)
of Example 1.
Example 7
Preparation of Nano Material Pattern 7
[0272] A silver nano wire pattern was fabricated by the same manner
as described in Example 1 except that the substrate having the
pattern fabricated in Manufacturing Example 7 was used in step 1)
of Example 1.
Example 8
Preparation of Nano Material Pattern 8
[0273] A silver nano wire pattern was fabricated by the same manner
as described in Example 1 except that the substrate having the
pattern fabricated in Manufacturing Example 8 was used in step 1)
of Example 1.
Example 9
Preparation of Nano Material Pattern 9
[0274] Step 1: The substrate having the pattern fabricated in
Manufacturing Example 4 was prepared.
[0275] Step 2: A dispersion was prepared by adding silver nano wire
to isopropyl alcohol (IPA) at the concentration of 0.5 weight % by
the weight of the total solution and dispersing thereof. The
prepared dispersion was spread on top of the substrate prepared in
step 1).
[0276] Then, a functional material dispersion was prepared by
adding poly(3,4-ethylenedioxythiophene):polystyrene sulfonate
(PEDOT:PSS) to isopropyl alcohol (IPA) (0.1 weight %) to isopropyl
alcohol (IPA) at the ratio of 1:4 (v/v) and dispersing thereof. The
prepared functional material dispersion was spread on top of the
substrate layered with the silver nano wire in order to form the
PEDOT:PSS layer thereon.
[0277] Step 3: The perfluorinated polymer pattern on the substrate
on which the silver nano wire and the PEDOT:PBS layer had been
formed in step 2) was eliminated by using HFE 7300, the fluoro
solvent, to fabricate a silver nano wire/PEDOT:PSS pattern in the
width of 25 .mu.m.
Example 10
Preparation of Nano Material Pattern 10
[0278] A silver nano wire/PEDOT:PSS pattern was fabricated by the
same manner as described in Example 9 except that the substrate
having the pattern fabricated in Manufacturing Example 9 was used
in step 1) of Example 9.
Example 11
Preparation of Nano Material Pattern 11
[0279] Step 1: The substrate having the pattern fabricated in
Manufacturing Example 4 was prepared.
[0280] Step 2: A dispersion was prepared by adding carbon nano tube
to isopropyl alcohol (IPA) at the concentration of 0.1 weight % by
the weight of the total solution and dispersing thereof. The
prepared dispersion was spread on top of the substrate prepared in
step 1).
[0281] Then, a functional material dispersion was prepared by
adding polyvinylpyrrolidone (0.01 weight %) to isopropyl alcohol
(IPA) at the ratio of 1:4 (v/v) and dispersing thereof. The
prepared functional material dispersion was spread on top of the
substrate layered with the carbon nano tube in order to form the
polyvinylpyrrolidone layer thereon.
[0282] Step 3: The perfluorinated polymer pattern on the substrate
on which the carbon nano tube and the polyvinylpyrrolidone layer
had been formed in step 2) was eliminated by using HFE 7300, the
fluoro solvent, to fabricate a carbon nano
tube/polyvinylpyrrolidone pattern in the width of 5 .mu.m.
Example 12
Preparation of Nano Material Pattern 12
[0283] Step 1: The substrate having the pattern fabricated in
Manufacturing Example 4 was prepared.
[0284] Step 2: A dispersion was prepared by adding silver nano wire
to isopropyl alcohol (IPA) at the concentration of 0.5 weight % by
the weight of the total solution and dispersing thereof. The
prepared dispersion was spread on top of the substrate prepared in
step 1).
[0285] Step 3: The perfluorinated polymer pattern on the substrate
spread with the silver nano wire dispersion in step 2) was
eliminated by using HFE 7300, the fluoro solvent, to fabricate a
silver nano wire pattern in the width of 25 .mu.m.
[0286] In the above, the polyethylenenaphthalate (PEN) substrate
was placed on the glass substrate with the silver nano wire pattern
formed thereon, to which 300 KPa pressure was given at 100.degree.
C. in order to insert the silver nano wire into the
polyethylenenaphthalate substrate.
Example 13
Preparation of Nano Material Pattern 13
[0287] Step 1: The substrate having the pattern fabricated in
Manufacturing Example 10 was prepared.
[0288] Step 2: A dispersion was prepared by adding silver nano wire
to isopropyl alcohol (IPA) at the concentration of 0.5 weight % by
the weight of the total solution and dispersing thereof. The
prepared dispersion was spread on top of the substrate prepared in
step 1).
[0289] Step 3: The perfluorinated polymer pattern on the substrate
spread with the silver nano wire dispersion in step 2) was
eliminated by using HFE 7300, the fluoro solvent, to fabricate a
silver nano wire pattern in the width of 25 .mu.m.
[0290] In the above, the silver nano wire was inserted into the
polyethylenenaphthalate (PEN) substrate having the silver nano wire
pattern fabricated thereon by pressing the top of the substrate
with 300 KPa at 100.degree. C.
Experimental Example 1
Observation Under Scanning Electron Microscope
[0291] The surface morphologies of the substrates having the nano
material patterns fabricated in Examples 1.about.5, and 9.about.13
were observed under scanning electron microscope (SEM) and the
results are shown in FIGS. 1.about.5, FIG. 10 and FIG. 11.
[0292] As shown in FIG. 1.about.FIG. 5, it was confirmed that the
nano materials of the invention, silver nano wire and carbon nano
tube, formed an even pattern.
[0293] As shown in FIG. 6.about.FIG. 8, the nano materials of the
invention showed a regular pattern in which silver nano wire and
carbon nano tube, the nano materials of the present invention, were
layered evenly.
[0294] As shown in FIG. 10 and FIG. 11, silver nano wire, the nano
material of the present invention, was inserted in the organic
substrate to form a regular pattern.
[0295] Those skilled in the art will appreciate that the
conceptions and specific embodiments disclosed in the foregoing
description may be readily utilized as a basis for modifying or
designing other embodiments for carrying out the same purposes of
the present invention. Those skilled in the art will also
appreciate that such equivalent embodiments do not depart from the
spirit and scope of the invention as set forth in the appended
Claims.
* * * * *