U.S. patent application number 14/659716 was filed with the patent office on 2015-09-17 for substrate processing apparatus and substrate processing method using substrate processing apparatus.
The applicant listed for this patent is SCREEN HOLDINGS CO., LTD.. Invention is credited to Taiki HINODE, Takashi OTA, Kazuhide SAITO, Kunio YAMADA.
Application Number | 20150262737 14/659716 |
Document ID | / |
Family ID | 54069596 |
Filed Date | 2015-09-17 |
United States Patent
Application |
20150262737 |
Kind Code |
A1 |
HINODE; Taiki ; et
al. |
September 17, 2015 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
USING SUBSTRATE PROCESSING APPARATUS
Abstract
In a substrate processing apparatus, a phosphoric acid aqueous
solution is supplied to a processor, and a liquid collection from
the processor is concurrently performed. Further, a silicon
concentration is adjusted, to supply an adjusted processing liquid
to the processor. Thus, a phosphoric acid aqueous solution film is
formed on the substrate. The liquid film is heated by a heating
device. The heating device has lamp heaters in a casing made of a
silica glass. The phosphoric acid aqueous solution on the substrate
is irradiated with infrared rays. A nitrogen gas flowing in a gas
passage formed in the casing is discharged towards a position
outside an outer periphery of the substrate.
Inventors: |
HINODE; Taiki; (Kyoto-shi,
JP) ; OTA; Takashi; (Kyoto-shi, JP) ; SAITO;
Kazuhide; (Kyoto-shi, JP) ; YAMADA; Kunio;
(Kyoto-shi, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SCREEN HOLDINGS CO., LTD. |
Kyoto |
|
JP |
|
|
Family ID: |
54069596 |
Appl. No.: |
14/659716 |
Filed: |
March 17, 2015 |
Current U.S.
Class: |
216/83 ;
156/345.18 |
Current CPC
Class: |
H01L 21/67017 20130101;
H01L 21/31111 20130101; H01L 21/6708 20130101; H01L 21/0206
20130101 |
International
Class: |
H01B 19/04 20060101
H01B019/04 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 17, 2014 |
JP |
2014-054202 |
Mar 19, 2014 |
JP |
2014-056080 |
Claims
1. A substrate processing apparatus comprising: a processing unit
including a processing liquid nozzle that supplies a processing
liquid to a substrate; a plurality of tanks including a supply
tank, a collection tank and an adjustment tank; and a path changing
mechanism that includes a changeable path of the processing liquid
and sets the path of the processing liquid such that a supply
operation of supplying the processing liquid from the supply tank
to the processing liquid nozzle, a collection operation of
collecting the processing liquid from the processing unit to the
collection tank, and an adjustment operation of adjusting
concentration of the processing liquid stored in the adjustment
tank are concurrently performed, wherein the path changing
mechanism changes the path of the processing liquid such that the
collection tank is changed to the adjustment tank after the
collection operation is finished and changes the path of the
processing liquid such that the adjusted processing liquid is
supplied to the processing unit after the adjustment operation is
finished.
2. The substrate processing apparatus according to claim 1, wherein
the path changing mechanism changes the path of the processing
liquid such that the adjusted processing liquid is supplied from
the adjustment tank to the supply tank after the adjustment
operation is finished and changes the path of the processing liquid
such that the adjustment tank is changed to the collection tank
after the processing liquid is supplied to the supply tank.
3. The substrate processing apparatus according to claim 2, wherein
the plurality of tanks include first, second and third tanks, the
first tank is the supply tank, any one of the second and third
tanks is set as the collection tank, another one of the second and
third tanks is set as the adjustment tank, the path changing
mechanism includes a first processing liquid supply system that
performs the supply operation of supplying the processing liquid
from the first tank to the processing liquid nozzle, a processing
liquid collection system that performs the collection operation of
selectively collecting the processing liquid from the processing
unit to one tank of the second and third tanks, a concentration
adjustment device that performs the adjustment operation of
adjusting concentration of the processing liquid stored in the
other tank of the second and third tanks, and a second processing
liquid supply system that supplies the adjusted processing liquid
from the other tank to the first tank after the adjustment
operation by the concentration adjustment device is finished, the
processing liquid collection system alternately performs the
collection operation from the processing unit to the second tank
and the collection operation from the processing unit to the third
tank, and the concentration adjustment device alternately performs
the adjustment operation in the third tank and the adjustment
operation in the second tank.
4. The substrate processing apparatus according to claim 1, wherein
the path changing mechanism changes the path of the processing
liquid such that the adjustment tank is changed to the collection
tank after the adjustment operation is finished and changes the
path of the processing liquid such that the supply tank is changed
to the collection tank after the supply operation is finished.
5. The substrate processing apparatus according to claim 4, wherein
the plurality of tanks include first, second and third tanks, any
one of the first, second and third tanks is set as the supply tank,
another one of the first, second and third tanks is set as the
collection tank, yet another one of the first, second and third
tanks is set as the adjustment tank, the path changing mechanism
includes a processing liquid supply system that performs the supply
operation of supplying the processing liquid from the first, second
or third tank that is set as the supply tank to the processing
liquid nozzle, a processing liquid collection system that performs
the collection operation of selectively collecting the processing
liquid from the processing unit to the first, second or third tank
that is set as the collection tank, and a concentration adjustment
device that performs the adjustment operation of adjusting
concentration of the processing liquid stored in the first, second
or third tank that is set as the adjustment tank, the processing
liquid supply system sequentially performs the supply operation
from the first tank to the processing liquid nozzle, the supply
operation from the second tank to the processing liquid nozzle, and
the supply operation from the third tank to the processing liquid
nozzle, the processing liquid collection system sequentially
performs the collection operation from the processing unit to the
second tank, the collection operation from the processing unit to
the third tank, and the collection operation from the processing
unit to the first tank, and the concentration adjustment device
sequentially performs the adjustment operation in the third tank,
the adjustment operation in the first tank and the adjustment
operation in the second tank.
6. The substrate processing apparatus according to claim 1, wherein
the substrate includes a first film formed of a first material, and
a second film formed of a second material, the processing liquid
includes a component that selectively etches the first material at
a higher rate than the second material, and the adjustment
operation includes processing for adjusting concentration of the
component in the processing liquid.
7. The substrate processing apparatus according to claim 6, wherein
the first material includes silicon nitride, and the second
material includes silicon oxide, the processing liquid is solution
including silicon and phosphoric acid, and the adjustment operation
includes processing for adjusting concentration of the silicon in
the solution.
8. The substrate processing apparatus according to claim 1, wherein
the processing liquid nozzle supplies a chemical liquid to the
substrate as the processing liquid, the processing unit further
includes a substrate holding device that holds the substrate in a
horizontal attitude and rotates the substrate about an axis in a
vertical direction when the chemical liquid is supplied from the
processing liquid nozzle to the substrate, a heating device for
heating the chemical liquid supplied to the substrate by the
processing liquid nozzle, and a gas supply system that supplies gas
to the heating device, and the heating device includes an infrared
ray generator that generates infrared rays, a first plate-shape
member that is arranged between the infrared ray generator and the
substrate held by the substrate holding device, and transmits
infrared rays, a second plate-shape member that is arranged between
the first plate-shape member and the substrate held by the
substrate holding device, and transmits infrared rays, and a gas
passage to which gas is supplied by the gas supply system is formed
between the first plate-shape member and the second frame-shape
member, and a first discharge opening is provided such that the gas
in the gas passage is discharged towards a position further outward
than an outer periphery of the substrate held by the substrate
holding device.
9. A substrate processing method using a substrate processing
apparatus, wherein the substrate processing apparatus includes a
processing liquid nozzle that supplies a processing liquid to a
substrate, and a plurality of tanks that include a supply tank, an
adjustment tank and a collection tank, and the substrate processing
method includes the steps of: concurrently performing a supply
operation for supplying the processing liquid from the supply tank
to the processing liquid nozzle, a collection operation for
collecting the processing liquid from the processing unit to the
collection tank, and an adjustment operation for adjusting
concentration of the processing liquid stored in the adjustment
tank; changing the collection tank to the adjustment tank after the
collection operation is finished; and changing a path of the
processing liquid such that the adjusted processing liquid is
supplied to the processing unit after the adjustment operation is
finished.
10. A substrate processing apparatus comprising: a substrate
holding device that holds a substrate in a horizontal attitude and
rotates the substrate about an axis in a vertical direction, a
chemical liquid supply system that supplies a chemical liquid to
the substrate held by the substrate holding device, a heating
device for heating the chemical liquid supplied to the substrate by
the chemical liquid supply system, and a gas supply system that
supplies gas to the heating device, wherein the heating device
includes an infrared ray generator that generates infrared rays, a
first plate-shape member that is arranged between the infrared ray
generator and the substrate held by the substrate holding device,
and transmits infrared rays, a second plate-shape member that is
arranged between the first plate-shape member and the substrate
held by the substrate holding device, and transmits infrared rays,
and a gas passage to which gas is supplied by the gas supply system
is formed between the first plate-shape member and the second
frame-shape member, and a first discharge opening is provided such
that the gas in the gas passage is discharged towards a position
further outward than an outer periphery of the substrate held by
the substrate holding device.
11. The substrate processing apparatus according to claim 10,
wherein the first discharge opening discharges the gas in the gas
passage outward of the substrate from a position further outward
than the outer periphery of the substrate in an outward radial
direction of the substrate.
12. The substrate processing apparatus according to claim 10,
wherein the infrared ray generator is provided such that a region
from a center to the outer periphery in a radial direction of the
substrate held by the substrate holding device is irradiated with
infrared rays with the heating device being still above the
substrate held by the substrate holding device.
13. The substrate processing apparatus according to claim 10,
wherein the infrared ray generator is formed in a circular arc
shape to extend along the outer periphery of the substrate held by
the substrate holding device.
14. The substrate processing apparatus according to claim 10,
wherein the plurality of infrared ray generators are provided to be
arranged in a direction from a center portion towards the outer
periphery of the substrate held by the substrate holding
device.
15. The substrate processing apparatus according to claim 10
further comprising a casing that stores the infrared ray generator,
wherein the casing has a bottom portion and has first, second,
third and fourth sidewall portions, the first plate-shape member
and the second plate-shape member constitute the bottom portion of
the casing, the fourth sidewall portion is provided to be located
above the outer periphery of the substrate held by the substrate
holding device, the first sidewall portion is provided to be
opposite to the fourth sidewall portion, and the second and third
sidewall portions are provided to respectively connect both ends of
the first sidewall portion to both ends of the fourth sidewall
portions, the first sidewall portion is constituted by a
plate-shape first inner member that transmits infrared rays, and a
plate-shape first outer member that is located outside of the first
inner member and transmits infrared rays, a first side passage that
communicates with the gas passage is formed between the first inner
member and the first outer member, the second sidewall portion is
constituted by a plate-shape second inner member that transmits
infrared rays, and a plate-shape second outer member that is
located outside of the second inner member and transmits infrared
rays, a second side passage that communicates with the gas passage
is formed, and a second discharge opening that discharges gas in
the second side passage to a position further outward than the
outer periphery of the substrate held by the substrate holding
device is provided, between the second inner member and the second
outer member, the third sidewall portion is constituted by a
plate-shape third inner member that transmits infrared rays, and a
plate-shape third outer member that is located outside of the third
outer member and transmits infrared rays, and a third side passage
that communicates with the gas passage is formed, and a third
discharge opening that discharges gas in the third side passage to
a position further outward than the outer periphery of the
substrate held by the substrate holding device is provided, between
the third inner member and the third outer member.
16. The substrate processing apparatus according to claim 10,
wherein the second and third sidewall members are provided to
extend in a substantially radial direction of the substrate held by
the substrate holding device.
17. The substrate processing apparatus according to claim 10,
wherein the first and second plate-shape members are formed of
glass.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a substrate processing
apparatus that performs various processing on a substrate and a
substrate processing method using the substrate processing
apparatus.
[0003] 2. Description of Related Art
[0004] Conventionally, substrate processing apparatuses have been
used to subject various types of substrates such as semiconductor
wafers, glass substrates for photomasks, glass substrates for
liquid crystal displays, glass substrates for plasma displays,
substrates for optical discs, substrates for magnetic discs,
substrates for magneto-optical discs and other substrates to
various types of processing.
[0005] There is a batch-type substrate processing apparatus that
soaks a plurality of substrates in a processing liquid stored in a
processing tank and performs processing such as etching. For
example, the batch-type substrate processing apparatus described in
JP 2009-94455 A includes a processing tank and a circulation
line.
[0006] In the substrate processing apparatus, a phosphoric acid
aqueous solution is stored in the processing tank, and a substrate
on which a silicon oxide film and a silicon nitride film are formed
is soaked in the phosphoric acid aqueous solution. In this state,
the phosphoric acid aqueous solution overflowing from the
processing tank is collected, and is supplied to the processing
tank again through the circulation line.
[0007] An appropriate amount of silicon is included in the
phosphoric acid aqueous solution, so that etching of the silicon
oxide film by the phosphoric acid aqueous solution is inhibited.
Thus, the silicon nitride film can be selectively etched.
[0008] An additive introduction mechanism and a trapping agent
introduction mechanism are provided in the above-mentioned
substrate processing apparatus in order to keep silicon
concentration of the phosphoric acid aqueous solution within an
appropriate range. The additive introduction mechanism increases
the silicon concentration of the phosphoric acid aqueous solution
by introducing an additive in the processing tank. Further, the
trapping agent introduction mechanism inhibits an excessive
increase in silicon concentration of the phosphoric acid aqueous
solution by introducing a trapping agent in the processing
tank.
BRIEF SUMMARY OF THE INVENTION
[0009] With recent increases in density and integration of devices,
the number of steps of using single-substrate processing
apparatuses instead of the batch-type substrate processing
apparatuses is increased. In a single-substrate processing
apparatus, it is considered that a phosphoric acid aqueous solution
is supplied to a substrate on which a silicon oxide film and a
silicon nitride film are formed and the phosphoric acid aqueous
solution supplied to the substrate is collected to reuse the
collected phosphoric acid aqueous solution via a circulation line,
for example.
[0010] In the single-substrate processing apparatus, however, the
phosphoric acid aqueous solution is supplied to every substrate.
Therefore, it is difficult to keep silicon concentration, of the
phosphoric acid aqueous solution supplied to a plurality of
substrates, constant. In this case, variations in etching amount of
silicon nitride films occur among the plurality of substrates. In
this manner, it is difficult to perform uniform processing with
high accuracy on the plurality of substrates.
[0011] Therefore, it is considered that the silicon concentration
is adjusted for a constant amount of phosphoric acid aqueous
solution and the adjusted phosphoric acid aqueous solution is used
for the processing on the plurality of substrates. In this case,
because it is necessary to adjust the silicon concentration every
time the constant amount of phosphoric acid aqueous solution is
used, the processing of the substrate needs to be temporarily
stopped. Therefore, processing efficiency of the substrates is
reduced.
[0012] An object of the present invention is to provide a substrate
processing apparatus in which uniform processing can be performed
with high accuracy while a reduction in processing efficiency of a
substrate is prevented, and a substrate processing method using the
substrate processing apparatus.
[0013] Further, in a substrate processing apparatus described in JP
2013-197114 A, a substrate having a resist film is held by a
substrate rotation mechanism, and an SPM (a Sulfuric acid/hydrogen
peroxide mixture) is supplied to an upper surface of the substrate
as a resist stripping liquid. The SPM is a liquid mixture of
sulfuric acid (H.sub.2SO.sub.4) and hydrogen peroxide water
(H.sub.2O.sub.2).
[0014] A lamp heater (an infrared lamp) is arranged to be opposite
to the upper surface of the substrate held by the substrate
rotation mechanism in order to increase reactivity between a resist
and the SPM. With a liquid film of the SPM being formed on the
substrate, the substrate is irradiated with infrared rays from the
lamp heater. Thus, the liquid film of the SPM is heated by the lamp
heater.
[0015] In the single-substrate processing apparatus using a high
temperature chemical liquid, when variations in temperature of the
chemical liquid on the substrate occur, uniform processing cannot
be performed on the substrate. Further, when heating efficiency of
the chemical liquid on the substrate is reduced, processing
efficiency of the substrate by the chemical liquid is reduced.
[0016] Another object of the present invention is to provide a
substrate processing apparatus in which uniform and efficient
processing by a heated chemical liquid can be performed.
[0017] (1) A substrate processing apparatus according to one aspect
of the present invention includes a processing unit including a
processing liquid nozzle that supplies a processing liquid to a
substrate, a plurality of tanks including a supply tank, a
collection tank and an adjustment tank, and a path changing
mechanism that includes a changeable path of the processing liquid
and sets the path of the processing liquid such that a supply
operation of supplying the processing liquid from the supply tank
to the processing liquid nozzle, a collection operation of
collecting the processing liquid from the processing unit to the
collection tank, and an adjustment operation of adjusting
concentration of the processing liquid stored in the adjustment
tank are concurrently performed, wherein the path changing
mechanism changes the path of the processing liquid such that the
collection tank is changed to the adjustment tank after the
collection operation is finished and changes the path of the
processing liquid such that the adjusted processing liquid is
supplied to the processing unit after the adjustment operation is
finished.
[0018] In the substrate processing apparatus, the supply operation
and the collection operation are concurrently performed. The
processing liquid is supplied from the supply tank to the
processing liquid nozzle by the supply operation, and the
processing liquid is collected from the processing unit to the
collection tank by the collection operation. Further, the
concentration of the processing liquid stored in the adjustment
tank is adjusted by the adjustment operation.
[0019] In this case, the processing liquid collected from the
processing unit is not supplied to the adjustment tank. Therefore,
the concentration of the processing liquid can be accurately
adjusted in the adjustment tank. The processing liquid being
adjusted in the adjustment tank is supplied to the processing unit
after the adjustment operation is finished. Here, the adjusted
processing liquid is supplied from the adjustment tank to the
processing liquid nozzle through the supply tank, or is supplied
from the adjustment tank to the processing liquid nozzle. Thus, the
substrate can be processed by the processing liquid in which the
concentration is accurately adjusted. Further, the collection tank
is changed to the adjustment tank after the collection operation is
finished. Thus, the concentration of the processing liquid
collected by the collection operation can be accurately
adjusted.
[0020] In this manner, it is possible to accurately adjust the
concentration of the processing liquid without stopping the supply
operation and the collection operation. As a result, uniform
processing can be performed with high accuracy while a reduction in
processing efficiency of the substrate is prevented.
[0021] (2) The path changing mechanism may change the path of the
processing liquid such that the adjusted processing liquid is
supplied from the adjustment tank to the supply tank after the
adjustment operation is finished and changes the path of the
processing liquid such that the adjustment tank is changed to the
collection tank after the processing liquid is supplied to the
supply tank.
[0022] In this case, the adjusted processing liquid is supplied to
the supply tank after the adjustment operation is finished. Thus,
the adjusted processing liquid is supplied from the adjustment tank
to the processing liquid nozzle through the supply tank. Further,
the adjustment tank is changed to the collection tank, and the
collection tank is changed to the adjustment tank. Thus, it is
possible to accurately adjust the concentration of the processing
liquid without stopping the supply operation and the collection
operation. Further, because the collected processing liquid is not
supplied but the adjusted processing liquid is supplied to the
supply tank, contamination of the supply tank is prevented and the
concentration of the processing liquid in the supply tank is kept
constant.
[0023] (3) The plurality of tanks may include first, second and
third tanks, the first tank may be the supply tank, any one of the
second and third tanks may be set as the collection tank, another
one of the second and third tanks may be set as the adjustment
tank, the path changing mechanism may include a first processing
liquid supply system that performs the supply operation of
supplying the processing liquid from the first tank to the
processing liquid nozzle, a processing liquid collection system
that performs the collection operation of selectively collecting
the processing liquid from the processing unit to one tank of the
second and third tanks, a concentration adjustment device that
performs the adjustment operation of adjusting concentration of the
processing liquid stored in the other tank of the second and third
tanks, and a second processing liquid supply system that supplies
an adjusted processing liquid from the other tank to the first tank
after the adjustment operation by the concentration adjustment
device is finished, the processing liquid collection system may
alternately perform the collection operation from the processing
unit to the second tank and the collection operation from the
processing unit to the third tank, and the concentration adjustment
device may alternately perform the adjustment operation in the
third tank and the adjustment operation in the second tank.
[0024] In this case, the first tank is used as the supply tank.
Thus, the supply operation from the first tank to the processing
liquid nozzle is performed by the first processing liquid supply
system. Further, the second and third tanks are alternately set as
the collection tank and the adjustment tank. Thus, it is possible
to accurately adjust the concentration of the processing liquid
without stopping the supply operation and the collection
operation.
[0025] (4) The path changing mechanism may change the path of the
processing liquid such that the adjustment tank is changed to the
collection tank after the adjustment operation is finished and
changes the path of the processing liquid such that the supply tank
is changed to the collection tank after the supply operation is
finished.
[0026] In this case, the adjustment tank is changed to the supply
tank after the adjustment operation is finished. Thus, the adjusted
processing liquid is supplied from the supply tank after the change
to the processing liquid nozzle. Further, the supply tank is
changed to the collection tank after the supply operation is
finished. Thus, the processing liquid is collected from the
processing unit to the collection tank after the change. Further,
the collection tank is changed to the adjustment tank after the
collection operation is finished. Thus, the concentration of the
processing liquid is adjusted in the adjustment tank after the
change. In this manner, it is possible to accurately adjust the
concentration of the processing liquid without stopping the supply
operation and the collection operation.
[0027] (5) The plurality of tanks may include first, second and
third tanks, any one of the first, second and third tanks may be
set as the supply tank, another one of the first, second and third
tanks may be set as the collection tank, yet another one of the
first, second and third tanks may be set as the adjustment tank,
the path changing mechanism may include a processing liquid supply
system that performs the supply operation of supplying the
processing liquid from the first, second or third tank that is set
as the supply tank to the processing liquid nozzle, a processing
liquid collection system that performs the collection operation of
selectively collecting the processing liquid from the processing
unit to the first, second or third tank that is set as the
collection tank, and a concentration adjustment device that
performs the adjustment operation of adjusting concentration of the
processing liquid stored in the first, second or third tank that is
set as the adjustment tank, the processing liquid supply system may
sequentially perform the supply operation from the first tank to
the processing liquid nozzle, the supply operation from the second
tank to the processing liquid nozzle, and the supply operation from
the third tank to the processing liquid nozzle, the processing
liquid collection system may sequentially perform the collection
operation from the processing unit to the second tank, the
collection operation from the processing unit to the third tank,
and the collection operation from the processing unit to the first
tank, and the concentration adjustment device may sequentially
perform the adjustment operation in the third tank, the adjustment
operation in the first tank and the adjustment operation in the
second tank.
[0028] In this case, each of the first, second and third tanks is
sequentially used as the supply tank, the collection tank and the
adjustment tank. Thus, it is possible to accurately adjust the
concentration of the processing liquid without stopping the supply
operation and the collection operation.
[0029] (6) The substrate may include a first film formed of a first
material, and a second film formed of a second material, the
processing liquid may include a component that selectively etches
the first material at a higher rate than the second material, and
the adjustment operation may include processing for adjusting
concentration of the component in the processing liquid.
[0030] In this case, the component, which selectively etches the
first material at the higher rate than the second material, is
adjusted by the adjustment operation. Thus, out of the first and
second films, the first film can be accurately removed and the
second film can remain.
[0031] (7) The first material may include silicon nitride, and the
second material may include silicon oxide, the processing liquid
may be solution including silicon and phosphoric acid, and the
adjustment operation may include processing for adjusting
concentration of the silicon in the solution.
[0032] Silicon inhibits an etching rate of the silicon oxide. Thus,
the processing liquid is supplied to the substrate, so that the
first film of the first film including the silicon nitride and the
second film including the silicon oxide can be selectively
removed.
[0033] (8) The processing liquid nozzle may supply a chemical
liquid to the substrate as the processing liquid, the processing
unit may further include a substrate holding device that holds the
substrate in a horizontal attitude and rotates the substrate about
an axis in a vertical direction when the chemical liquid is
supplied from the processing liquid nozzle to the substrate, a
heating device for heating the chemical liquid supplied to the
substrate by the processing liquid nozzle, and a gas supply system
that supplies gas to the heating device, and the heating device may
include an infrared ray generator that generates infrared rays, a
first plate-shape member that is arranged between the infrared ray
generator and the substrate held by the substrate holding device,
and transmits infrared rays, a second plate-shape member that is
arranged between the first plate-shape member and the substrate
held by the substrate holding device, and transmits infrared rays,
and a gas passage to which gas is supplied by the gas supply system
may be formed between the first plate-shape member and the second
plate-shape member, and a first discharge opening may be provided
such that the gas in the gas passage is discharged towards a
position further outward than an outer periphery of the substrate
held by the substrate holding device.
[0034] In this case, the chemical liquid is supplied from the
processing liquid nozzle to the substrate held by the substrate
holding device in a horizontal attitude. Further, the infrared rays
are generated by the infrared ray generator of the heating device.
The infrared rays are permeated through the first and second
plate-shape members, and the chemical liquid on the substrate is
irradiated with the infrared rays. Thus, the chemical liquid is
heated.
[0035] At this time, gas is supplied to the gas passage between the
first plate-shape member and the second plate-shape member by the
gas supply system. The gas flows in the gas passage and is
discharged from the first discharge opening. Thus, thermal
conduction from the first plate-shape member, which is heated by
the heat of radiation of the infrared ray generator, to the second
plate-shape member is prevented or reduced. Therefore, even when
the chemical liquid on the substrate or splashes of the chemical
liquid adheres or adhere to the second plate-shape member, reaction
between the second plate-shape member and the chemical liquid is
inhibited. Therefore, fogging is prevented from being generated in
the second plate-shape member, and the chemical liquid on the
substrate is uniformly irradiated with the infrared rays. Further,
the gas in the gas passage is discharged from the first discharge
opening towards a position further outward than the outer periphery
of the substrate. Therefore, the chemical liquid on the substrate
is prevented from being locally cooled by the gas. As a result,
uniform and efficient processing by the heated chemical liquid
becomes possible.
[0036] (9) A substrate processing method according to another
aspect of the present invention is a substrate processing method
using a substrate processing apparatus, wherein the substrate
processing apparatus includes a processing liquid nozzle that
supplies a processing liquid to a substrate, and a plurality of
tanks that include a supply tank, an adjustment tank and a
collection tank, and the substrate processing method includes the
steps of concurrently performing a supply operation for supplying
the processing liquid from the supply tank to the processing liquid
nozzle, a collection operation for collecting the processing liquid
from the processing unit to the collection tank, and an adjustment
operation for adjusting concentration of the processing liquid
stored in the adjustment tank, changing the collection tank to the
adjustment tank after the collection operation is finished, and
changing a path of the processing liquid such that the adjusted
processing liquid is supplied to the processing unit after the
adjustment operation is finished.
[0037] In the substrate processing method, the supply operation and
the collection operation are concurrently performed. The processing
liquid is supplied from the supply tank to the processing liquid
nozzle by the supply operation, and the collection liquid is
collected from the processing unit to the collection tank by the
collection operation. Further, the concentration of the processing
liquid stored in the adjustment tank is adjusted by the adjustment
operation.
[0038] In this case, the processing liquid collected from the
processing unit is not supplied to the adjustment tank. Therefore,
the concentration of the processing liquid can be accurately
adjusted in the adjustment tank. The processing liquid, which is
adjusted in the adjustment tank, is supplied to the processing unit
after the adjustment operation is finished. Here, the adjusted
processing liquid is supplied from the adjustment tank to the
processing liquid nozzle through the supply tank, or is supplied
from the adjustment tank to the processing liquid nozzle. Thus, the
substrate can be processed by the processing liquid in which the
concentration is accurately adjusted. Further, the collection tank
is changed to the adjustment tank after the collection operation is
finished. Thus, the concentration of the processing liquid, which
is collected by the collection operation, can be accurately
adjusted.
[0039] In this manner, it is possible to accurately adjust the
concentration of the processing liquid without stopping the supply
operation and the collection operation. As a result, it is possible
to perform uniform processing with high accuracy while a reduction
in processing efficiency of the substrate is prevented.
[0040] (10) A substrate processing apparatus according to yet
another aspect of the present invention includes a substrate
holding device that holds a substrate in a horizontal attitude and
rotates the substrate about an axis in a vertical direction, a
chemical liquid supply system that supplies a chemical liquid to
the substrate held by the substrate holding device, a heating
device for heating the chemical liquid supplied to the substrate by
the chemical liquid supply system, and a gas supply system that
supplies gas to the heating device, wherein the heating device
includes an infrared ray generator that generates infrared rays, a
first plate-shape member that is arranged between the infrared ray
generator and the substrate held by the substrate holding device,
and transmits infrared rays, a second plate-shape member that is
arranged between the first plate-shape member and the substrate
held by the substrate holding device, and transmits infrared rays,
and a gas passage to which gas is supplied by the gas supply system
is formed between the first plate-shape member and the second
frame-shape member, and a first discharge opening is provided such
that the gas in the gas passage is discharged towards a position
further outward than an outer periphery of the substrate held by
the substrate holding device.
[0041] In this substrate processing apparatus, the chemical liquid
is supplied by the chemical supply system to the substrate held by
the substrate holding device in a horizontal attitude. Further, the
infrared rays are generated by the infrared ray generator of the
heating device. The infrared rays are permeated through the first
and second plate-shape members, and the chemical liquid on the
substrate is irradiated with the infrared rays. Thus, the chemical
liquid is heated.
[0042] At this time, gas is supplied to the gas passage between the
first plate-shape member and the second plate-shape member by the
gas supply system. The gas flows in the gas passage, and is
discharged from the first discharge opening. Thus, thermal
conduction from the first plate-shape member, which is heated by
the heat of radiation of the infrared ray generator, to the second
plate-shape member is prevented or reduced. Therefore, even when
the chemical liquid on the substrate or splashes of the chemical
liquid adheres or adhere to the second plate-shape member, reaction
between the second plate-shape member and the chemical liquid is
inhibited. Therefore, fogging is prevented from being generated in
the second plate-shape member, and the chemical liquid on the
substrate is uniformly irradiated with the infrared rays. Further,
the gas in the gas passage is discharged from the first discharge
opening to a position further outward than the outer periphery of
the substrate. Therefore, the chemical liquid on the substrate is
prevented from locally being cooled by the gas. As a result,
uniform and efficient processing by the heated chemical liquid
becomes possible.
[0043] (11) The first discharge opening may discharge the gas in
the gas passage outward of the substrate from a position further
outward than the outer periphery of the substrate in an outward
radial direction of the substrate.
[0044] In this case, because the gas being discharged from the
first discharge opening is directed from a position further outward
than the outer periphery of the substrate to a position even
further outward than the position in a radial direction of the
substrate, the gas is prevented from flowing on the liquid film of
the chemical liquid supplied to the substrate. Therefore, a
reduction in temperature of the chemical liquid, which is caused
when the gas flows on the liquid film of the chemical liquid
supplied to the substrate, is prevented.
[0045] (12) The infrared ray generator may be provided such that a
region from a center to the outer periphery in a radial direction
of the substrate held by the substrate holding device is irradiated
with infrared rays with the heating device being still above the
substrate held by the substrate holding device.
[0046] In this case, because the region from the center to the
outer periphery in the radial direction of the substrate is
simultaneously irradiated with the infrared rays, the entire
chemical liquid on the substrate is more uniformly heated by the
rotation of the substrate.
[0047] (13) The infrared ray generator may be formed in a circular
arc shape to extend along the outer periphery of the substrate held
by the substrate holding device.
[0048] In this case, the chemical liquid on the substrate is
uniformly irradiated with the infrared rays in a circumferential
direction of the substrate. Thus, the chemical liquid on the
substrate is more uniformly heated in the circumferential
direction.
[0049] (14) The plurality of infrared ray generators may be
provided to be arranged in a direction from a center portion
towards the outer periphery of the substrate held by the substrate
holding device.
[0050] In this case, the chemical liquid on the substrate can be
efficiently heated in a region in the radial direction of the
substrate.
[0051] (15) The substrate processing apparatus may further include
a casing that stores the infrared ray generator, wherein the casing
may have a bottom portion and have first, second, third and fourth
sidewall portions, the first plate-shape member and the second
plate-shape member may constitute the bottom portion of the casing,
the fourth sidewall portion may be provided to be located above the
outer periphery of the substrate held by the substrate holding
device, the first sidewall portion may be provided to be opposite
to the fourth sidewall portion, and the second and third sidewall
portions may be provided to respectively connect both ends of the
first side portion to both ends of the fourth sidewall portions,
the first sidewall portion may be constituted by a plate-shape
first inner member that transmits infrared rays, and a plate-shape
first outer member that is located outside of the first inner
member and transmits infrared rays, a first side passage that
communicates with the gas passage may be formed between the first
inner member and the first outer member, the second sidewall
portion may be constituted by a plate-shape second inner member
that transmits infrared rays, and a plate-shape second outer member
that is located outside of the second inner member and transmits
infrared rays, a second side passage that communicates with the gas
passage may be formed, and a second discharge opening that
discharges gas in the second side passage to a position further
outward than the outer periphery of the substrate held by the
substrate holding device may be provided, between the second inner
member and the second outer member, the third sidewall portion may
be constituted by a plate-shape third inner member that transmits
infrared rays, and a plate-shape third outer member that is located
outside of the third outer member and transmits infrared rays, and
a third side passage that communicates with the gas passage may be
formed, and a third discharge opening that discharges gas in the
third side passage to a position further outward than the outer
periphery of the substrate held by the substrate holding device may
be provided, between the third inner member and the third outer
member.
[0052] In this case, the infrared rays being generated by the
infrared ray generator is permeated through the first inner member
and the first outer member of the first sidewall portion, and the
chemical liquid on the substrate is irradiated with the infrared
rays. Further, the infrared rays are permeated through the second
inner member and the second outer member of the second sidewall
portion, and the chemical liquid on the substrate is irradiated
with the infrared rays. Further, the infrared rays are permeated
through the third inner member and the third outer member of the
third sidewall portion, and the chemical liquid on the substrate is
irradiated with the infrared rays. Thus, heating efficiency of the
chemical liquid is improved.
[0053] At this time, gas is supplied to the first, second and third
side passages. The gas flows in the first, second and third side
passages, and is discharged from the second and third discharge
openings. Thus, thermal conduction from the first, second and third
inner members, which is heated by the heat of radiation of the
infrared ray generator, to the first, second and third outer
members is prevented or reduced. Therefore, even when the chemical
liquid on the substrate or splashes of the chemical liquid adheres
or adhere to the first, second or third outer member, reaction
between the first, second or third outer member and the chemical
liquid is inhibited. Therefore, fogging is prevented from being
generated in the first, second or third outer member, and the
chemical liquid on the substrate is uniformly irradiated with the
infrared rays. Further, the gas in the second and third side
passages is discharged from the respective second and third
discharge openings to positions further outward than the outer
periphery of the substrate. Therefore, the chemical liquid on the
substrate is prevented from being cooled by the gas. As a result,
uniform and efficient processing of the substrate by the heated
chemical liquid becomes possible.
[0054] (16) The second and third sidewall members may be provided
to extend in a substantially radial direction of the substrate held
by the substrate holding device.
[0055] In this case, the chemical liquid on the substrate can be
uniformly heated, and the size and weight of the heating device can
be reduced.
[0056] (17) The first and second plate-shape members may be formed
of glass.
[0057] In this case, because the first and second plate-shape
members have high transmittance with respect to the infrared rays,
the chemical liquid on the substrate can be efficiently heated.
[0058] Other features, elements, characteristics, and advantages of
the present invention will become more apparent from the following
description of preferred embodiments of the present invention with
reference to the attached drawings.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING
[0059] FIG. 1 is a schematic view showing the configuration of a
substrate processing apparatus according to a first embodiment;
[0060] FIG. 2 is a time chart showing contents of operations
respectively related to first, second and third tanks of FIG.
1;
[0061] FIG. 3 is a schematic view showing the operations of the
substrate processing apparatus from a time t1 to a time t7 of FIG.
2;
[0062] FIG. 4 is a schematic view showing the operations of the
substrate processing apparatus from the time t1 to the time t7 of
FIG. 2;
[0063] FIG. 5 is a schematic view showing the operations of the
substrate processing apparatus from the time t1 to the time t7 of
FIG. 2;
[0064] FIG. 6 is a schematic view showing the operations of the
substrate processing apparatus from the time t1 to the time t7 of
FIG. 2;
[0065] FIG. 7 is a schematic view showing the operations of the
substrate processing apparatus from the time t1 to the time t7 of
FIG. 2;
[0066] FIG. 8 is a time chart according to a first comparative
example for explaining effects of the substrate processing
apparatus according to the first embodiment;
[0067] FIG. 9 is a time chart according to a second comparative
example for explaining the effects of the substrate processing
apparatus according to the first embodiment;
[0068] FIGS. 10A and 10B are diagrams for explaining the effects of
the substrate processing apparatus according to the first
embodiment;
[0069] FIG. 11 is a schematic view showing the configuration of a
substrate processing apparatus according to a second
embodiment;
[0070] FIGS. 12A to 12C are diagrams for explaining effects of the
substrate processing apparatus according to the second
embodiment;
[0071] FIG. 13 is a schematic view showing the configuration of a
substrate processing apparatus according to a third embodiment;
[0072] FIG. 14 is a plan view of a heating device of FIG. 13;
[0073] FIG. 15 is a plan view showing a state in which a cover
member is removed from a casing of FIG. 14;
[0074] FIG. 16 is a side view of one side of the heating device of
FIG. 14 as viewed in a direction of the arrow Q of FIG. 3;
[0075] FIG. 17 is a side view of another side of the heating device
of FIG. 14 as viewed in a direction of the arrow R of FIG. 3;
[0076] FIG. 18 is a cross sectional view taken along the line A-A
of FIG. 14;
[0077] FIG. 19 is a cross sectional view taken along the line B-B
of FIG. 14;
[0078] FIG. 20 is a cross sectional view taken along the line C-C
of FIG. 16;
[0079] FIG. 21 is a horizontal cross sectional view showing a flow
of a nitrogen gas in the heating device;
[0080] FIG. 22 is a vertical cross sectional view showing the flow
of the nitrogen gas in the heating device; and
[0081] FIG. 23 is a side view of the heating device when a liquid
film of a phosphoric acid aqueous solution is heated.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0082] A substrate processing apparatus and a substrate processing
method using the substrate processing apparatus according to one
embodiment of the present invention will be described below with
reference to drawings. In the following description, a substrate
refers to a semiconductor wafer, a glass substrate for a liquid
crystal display, a glass substrate for a PDP (Plasma Display
Panel), a glass substrate for a photo-mask, a substrate for an
optical disc, or the like.
[1] First Embodiment
[0083] A substrate processing apparatus according to the present
embodiment is a single-substrate processing apparatus that
processes substrates one by one. In the substrate processing
apparatus, a high temperature phosphoric acid aqueous solution
(H.sub.3PO.sub.4+H.sub.2O) including silicon is supplied as a
processing liquid to a substrate on which a silicone oxide film
made of silicon oxide (SiO.sub.2) and a silicon nitride film made
of silicon nitride (Si.sub.3N.sub.4) are formed. In this case, the
phosphoric acid aqueous solution includes silicon, so that an
etching rate of the silicone oxide film is reduced. Thus, the
silicon nitride film is selectively etched.
[0084] Silicon is present in the phosphoric acid aqueous solution
because the silicon nitride film is etched by the phosphoric acid
aqueous solution or a liquid concentrate including silicon
particles is mixed in the phosphoric acid aqueous solution, for
example.
[0085] (1) Configuration of Substrate Processing Apparatus
[0086] FIG. 1 is a schematic view showing the configuration of the
substrate processing apparatus according to the first embodiment.
As shown in FIG. 1, the substrate processing apparatus 100 mainly
includes a processor 1, a first tank 5, a second tank 6, a third
tank 7, a new liquid supply device 8 and a controller 9. Further,
the processor 1 includes a spin chuck 2, a processing liquid nozzle
3, a heating device 4 and a cup CU. In the processor 1, the
plurality of substrates W are sequentially processed one by
one.
[0087] The spin chuck 2 has a spin motor 2a, a spin base 2b and a
plurality of chuck pins 2c. The spin motor 2a is provided such that
a rotation shaft is parallel to a vertical direction. The spin base
2a has a disc shape and is attached to an upper end of the rotation
shaft of the spin motor 2a in a horizontal attitude. The plurality
of chuck pins 2c are provided on an upper surface of the spin base
2b, and hold a peripheral edge of the substrate W. With the
plurality of chuck pins 2c holding the substrate W, the spin motor
2a is operated. Thus, the substrate W is rotated about a vertical
axis.
[0088] While the mechanical spin chuck 2 holding the peripheral
edge of the substrate W is used in the present example as described
above, the invention is not limited to this. A suction-type spin
chuck, which holds a lower surface of the substrate W by suction,
may be used instead of the mechanical spin chuck.
[0089] The processing liquid nozzle 3 and the heating device 4 are
provided to be movable between a position above the substrate W
held by the spin chuck 2 and a waiting position beside the
substrate W. The processing liquid nozzle 3 supplies the phosphoric
acid aqueous solution supplied from the first tank 5 to the
substrate W rotated by the spin chuck 2.
[0090] When the phosphoric acid aqueous solution is supplied from
the processing liquid nozzle 3 to the substrate W, the heating
device 4 is arranged at a position opposite to an upper surface of
the substrate W. The heating device 4 includes a lamp heater that
generates infrared rays, and heats the substrate W and the
processing liquid supplied to the substrate W by heat of radiation.
For example, a tungsten-halogen lamp, a xenon arc lamp, a graphite
heater or the like can be used as the lamp heater.
[0091] A heating temperature of the substrate W by the heating
device 4 is set higher than a boiling point corresponding to
phosphoric acid concentration of the phosphoric acid aqueous
solution (not less than 140.degree. C. and not more than
160.degree. C., for example). Thus, a temperature of the phosphoric
acid aqueous solution on the substrate W is increased to the
boiling point corresponding to the phosphoric acid concentration,
and an etching rate of the silicon nitride film by the phosphoric
acid aqueous solution is increased.
[0092] On the other hand, when silicon concentration in the
phosphoric acid aqueous solution is within an appropriate range, an
etching rate of the silicone oxide film by the phosphoric acid
aqueous solution is kept sufficiently lower than an etching rate of
the silicon nitride film. As a result, the silicon nitride film on
the substrate W is selectively etched as described above.
[0093] The cup CU is provided to surround the spin chuck 2. The cup
CU is lowered at a time of carrying of the substrate W into the
spin chuck 2 and a time of carrying of the substrate W out from the
spin chuck 2, and is lifted at a time of supply of the phosphoric
acid aqueous solution to the substrate W.
[0094] At the time of supply of the phosphoric acid aqueous
solution to the rotating substrate W, an upper end of the cup CU is
located at a position further upward than the substrate W. Thus,
the phosphoric acid aqueous solution being shaken off from the
substrate W is caught by the cup CU. The phosphoric acid aqueous
solution being caught by the cup CU is sent to the second tank 6 or
the third tank 7 as described below.
[0095] The first tank 5 includes a circulation tank 5a and a
storage tank 5b. The circulation tank 5a and the storage tank 5b
are arranged to be adjacent to each other, and are configured such
that an overflowing liquid from one tank (the circulation tank 5a,
for example) flows into the other tank (the storage tank 5b, for
example). A phosphoric acid concentration meter S1 and a silicon
concentration meter S2 are provided in the circulation tank 5a. The
phosphoric acid concentration meter S1 outputs the phosphoric acid
concentration of the phosphoric acid aqueous solution, and the
silicon concentration meter S2 outputs the silicon concentration of
the phosphoric acid aqueous solution. A liquid surface sensor S3,
which outputs a height of a liquid surface of the phosphoric acid
aqueous solution, is provided in the storage tank 5b. A DIW
(Deionized Water) supply system 91, a nitrogen (N.sub.2) gas supply
system 92 and a phosphoric acid aqueous solution supply system 93
are connected to the storage tank 5b.
[0096] A first supply pipe 10 is provided to connect the storage
tank 5b of the first tank 5 to the processing liquid nozzle 3 of
the processor 1. A pump 15, a heater 14, a filter 13, a valve 12
and a heater 11 are inserted into the first supply pipe 10 in this
order from the storage tank 5b towards the processing liquid nozzle
3.
[0097] A circulation pipe 16 is provided to connect a portion, of
the first supply pipe 10, that is located between the filter 13 and
the valve 12 to the circulation tank 5a. A valve 17 is inserted
into the circulation pipe 16. Further, the DIW supply system 91 is
connected to a portion, of the first supply pipe 10, that is
located between the heater 11 and the processing liquid nozzle
3.
[0098] Each of the second and third tanks 6, 7 has the same
configuration as the first tank 5, and includes each of circulation
tanks 6a, 7a and each of storage tanks 6b, 7b. A phosphoric acid
concentration meter S1 and a silicon concentration meter S2 are
provided in each of the circulation tanks 6a, 7a. A liquid surface
sensor S3 is provided in each of the storage tanks 6b, 7b, and a
DIW supply system 91, a nitrogen gas supply system 92 and a
phosphoric acid aqueous solution supply system 93 are connected to
each of the storage tanks 6b, 7b.
[0099] A second supply pipe 20 is provided to connect the storage
tank 5b of the first tank 5 to each of the storage tanks 6b, 7b of
each of the second and third tanks 6, 7. The second supply pipe 20
has one main pipe 20a and two branch pipes 20b, 20c. The branch
pipes 20b, 20c are connected to the main pipe 20a. The main pipe
20a is connected to the storage tank 5b of the first tank 5, and
the two branch pipes 20b, 20c are respectively connected to the
storage tanks 6b, 7b of the respective second and third tanks 6,
7.
[0100] A pump 24, a heater 23, a filter 22 and a valve 21 are
inserted into the one branch pipe 20b in this order from the
storage tank 6b towards the main pipe 20a. A circulation pipe 25 is
provided to connect a portion, of the branch pipe 20b, that is
located between the filter 22 and the valve 21 to the circulation
tank 6a. A valve 26 is inserted into the circulation pipe 25.
[0101] A pump 34, a heater 33, a filter 32 and a valve 31 are
inserted into the other branch pipe 20c in this order from the
storage tank 7b towards the main pipe 20a. A circulation pipe 35 is
provided to connect a portion, of the branch pipe 20c, that is
located between the filter 32 and the valve 31 to the circulation
tank 7a. A valve 36 is inserted into the circulation pipe 35.
[0102] A collection pipe 50 is provided to connect the cup CU of
the processor 1 to each of the storage tanks 6b, 7b of each of the
second and third tanks 6, 7. The collection pipe 50 has one main
pipe 50a and two branch pipes 50b, 50c. The branch pipes 50b, 50c
are connected to the main pipe 50a. The main pipe 50a of the
collection pipe 50 is connected to the cup CU, and the two branch
pipes 50b, 50c are respectively connected to the storage tanks 6b,
7b of the respective second and third tanks 6, 7. A valve 51 is
inserted into the branch pipe 50b, and a valve 52 is inserted into
the branch pipe 50c.
[0103] The new liquid supply device 8 has a mixing tank 8a and a
supply device that supplies liquid in the mixing tank 8a to the
outside. A phosphoric acid aqueous solution supply system 93 and a
silicon (Si) liquid concentrate supply system 94 are connected to
the new liquid supply device 8. Further, a silicon concentration
meter S2 is provided in the mixing tank 8a.
[0104] In the mixing tank 8a of the new liquid supply device 8, a
phosphoric acid aqueous solution and a silicon liquid concentrate,
which are respectively supplied from the phosphoric acid aqueous
solution supply system 93 and the silicon liquid concentrate supply
system 94, are mixed at a predetermined ratio in advance. Thus, a
phosphoric acid aqueous solution having predetermined silicon
concentration (hereinafter referred to as reference silicon
concentration) is produced as a new processing liquid, and is kept
at a predetermined temperature. In the present example, liquid in
which silicon particles are dissolved in the phosphoric acid
aqueous solution is used as the silicon liquid concentrate.
[0105] Further, in the new liquid supply device 8, silicon
concentration in the mixing tank 8a can be adjusted to a value
different from the reference silicon concentration. For example,
with the phosphoric acid aqueous solution having the reference
silicon concentration being stored in the mixing tank 8a, the
silicon liquid concentrate is added in the mixing tank 8a. Thus,
the silicon concentration in the mixing tank 8a can be made higher
than the reference silicon concentration. Further, with the
phosphoric acid aqueous solution having the reference silicon
concentration being stored in the mixing tank 8a, a phosphoric acid
aqueous solution is added in the mixing tank 8a. Thus, the silicon
concentration in the mixing tank 8a can be made lower than the
reference silicon concentration.
[0106] A third supply pipe 40 is provided to connect the new liquid
supply device 8 to each of the storage tanks 6b, 7b of each of the
second and third tanks 6, 7. The third supply pipe 40 has one main
pipe 40a and two branch pipes 40b, 40c. The branch pipes 40b, 40c
are connected to the main pipe 40a. The main pipe 40a of the third
supply pipe 40 is connected to the new liquid supply device 8, and
the two branch pipes 40b, 40c are respectively connected to the
storage tanks 6b, 7b of the respective second and third tanks 6, 7.
A valve 41 is inserted into the branch pipe 40b, and a valve 42 is
inserted into the branch pipe 40c.
[0107] The controller 9 is constituted by a CPU (Central Processing
Unit) and a memory, a microcomputer or the like. A system program
is stored in the memory of the controller 9. The controller 9
controls the operation of each constituent element of the substrate
processing apparatus 100.
[0108] For example, the controller 9 switches between an open state
and a close state of each valve 12, 17, 21, 26, 31, 36, 41, 42, 51,
52 based on a height of the liquid surface that is output from each
liquid surface sensor S3. Further, the controller 9 controls each
DIW supply system 91, each nitrogen gas supply system 92 and each
phosphoric acid aqueous solution supply system 93 based on
phosphoric acid concentration that is output from each phosphoric
acid concentration meter S1. Further, the controller 9 controls the
new liquid supply device 8, each phosphoric acid aqueous solution
supply system 93 and each silicon liquid concentrate supply system
94 based on silicon concentration that is output from each silicon
concentration meter S2.
[0109] (2) Operation of Substrate Processing Apparatus
[0110] A series of operations of the substrate processing apparatus
100 performed when the plurality of substrates W are processed by
the processor 1 will be described. FIG. 2 is a time chart showing
the contents of operations respectively related to the first,
second and third tanks 5, 6, 7 of FIG. 1. FIGS. 3 to 7 are
schematic views showing the operations of the substrate processing
apparatus 100 from a time t1 to a time t7 of FIG. 2.
[0111] In the first, second and third tanks 5, 6, 7, a first
reference height L1 and a second reference height L2 are set in
each of the storage tanks 5b, 6b, 7b. The first reference height L1
is set in the vicinity of a bottom portion of each of the storage
tanks 5b, 6b, 7b, and the second reference height L2 is set higher
than the first reference height L1 and in the vicinity of an upper
end of each of the storage tanks 5b, 6b, 7b.
[0112] The first reference height L1 is set to a height of the
liquid surface when about one fifth of the maximum capacity of each
storage tank 5b, 6b, 7b of liquid is stored in each storage tank
5b, 6b, 7b, for example. Further, the second reference height L2 is
set to a height of the liquid surface when about four fifth of the
maximum capacity of each storage tank 5b, 6b, 7b of liquid is
stored in each storage tank 5b, 6b, 7b, for example.
[0113] In the initial state, a phosphoric acid aqueous solution
having predetermined phosphoric acid concentration (hereinafter
referred to as reference phosphoric acid concentration) and the
reference silicon concentration is stored in each of the first and
second tanks 5, 6. In each of the first and second tanks 5, 6, the
height of the liquid surface of the phosphoric acid aqueous
solution is kept at the second reference height L2.
[0114] Further, a phosphoric acid aqueous solution not having the
reference phosphoric acid concentration and the reference silicon
concentration is stored in the third tank 7. In the third tank 7,
the height of the liquid surface of the phosphoric acid aqueous
solution is kept at the first reference height L1. The all valves
12, 17, 21, 26, 31, 36, 41, 42, 51, 52 shown in FIG. 1 are
closed.
[0115] When the substrate processing apparatus 100 is turned on
from the initial state, operations of the heaters 11, 14, 23, 33,
the pumps 15, 24, 34 and the new liquid supply device 8 of FIG. 1
is started. In this state, the first substrate W is carried into
the spin chuck 2 of the processor 1. Further, the substrate W is
held and rotated by the spin chuck 2.
[0116] At the subsequent time t1 of FIG. 2, the controller 9 of
FIG. 1 opens the valves 12, 17 of FIG. 1. Thus, as indicated by a
thick arrow A1 in FIG. 3, the phosphoric acid aqueous solution in
the storage tank 5b is sucked by the pump 15, and is sent to the
filter 13 through the heater 14. The heater 14 heats the phosphoric
acid aqueous solution passing through the first supply pipe 10 to a
predetermined temperature (150.degree. C., for example). The filter
13 removes unnecessary deposits and the like by filtering the
phosphoric acid aqueous solution.
[0117] As indicated by a thick arrow A2 in FIG. 3, part of the
phosphoric acid aqueous solution, which has passed through the
heater 14 and the filter 13, is sent to the processing liquid
nozzle 3 while being further heated by the heater 11. Thus, the
phosphoric acid aqueous solution having the reference phosphoric
acid concentration and the reference silicon concentration is
supplied to the substrate W together with DIW from the processing
liquid nozzle 3. The DIW is suitably supplied from the DIW supply
system 91 to a portion located between the heater 11 and the supply
liquid nozzle 3.
[0118] On the other hand, as indicated by a thick arrow A3 in FIG.
3, the rest of the phosphoric acid aqueous solution, which has
passed through the heater 14 and the filter 13, is returned to the
circulation tank 5a of the first tank 5 through the circulation
pipe 16. In the first tank 5, the phosphoric acid aqueous solution
overflowing from the circulation tank 5a flows into the storage
tank 5b. In this manner, the phosphoric acid aqueous solution in
the storage tank 5b passes through the first supply pipe 10, the
circulation pipe 16 and the circulation tank 5a while being heated
and filtered to return to the storage tank 5b. Thus, the
temperature and cleanliness of the phosphoric acid aqueous solution
in the storage tank 5b are kept substantially constant.
[0119] As described above, an operation of keeping temperature and
cleanliness of the phosphoric acid aqueous solution in the storage
tank 5b constant by heating and filtering of part of the phosphoric
acid aqueous solution stored in the storage tank 5b and returning
of the part of the phosphoric acid aqueous solution to the storage
tank 5b is referred to as a circulation temperature control.
[0120] At the time t1, the controller 9 of FIG. 1 further opens the
valve 52 of FIG. 1. Thus, as indicated by a thick arrow A4 in FIG.
3, the used phosphoric acid aqueous solution, which is collected by
the cup CU of the processor 1, is sent to the storage tank 7b of
the third tank 7 through the main pipe 50a and the branch pipe 50c.
In this manner, an operation of sending the used phosphoric acid
aqueous solution that has been supplied to the substrate W to the
storage tank 7b is referred to as a liquid collection.
[0121] At the time t1, the controller 9 of FIG. 1 further opens the
valves 26, 36 of FIG. 1. Thus, as indicated by thick arrows A5, A6,
the circulation temperature control similar to the first tank 5 is
also performed in the second tank 6 and the third tank 7.
[0122] Here, when the liquid collection and the circulation
temperature control are performed in the third tank 7, phosphoric
acid concentration of the phosphoric acid aqueous solution stored
in the storage tank 7b is different from the reference phosphoric
acid concentration. Therefore, the controller 9 of FIG. 1 controls
the DIW supply system 91, the nitrogen gas supply system 92 and the
phosphoric acid aqueous solution supply system 93 based on the
output of the phosphoric acid concentration meter S1 of the third
tank 7 such that the phosphoric acid concentration in the storage
tank 7b becomes closer to the reference phosphoric acid
concentration.
[0123] For example, when the output from the phosphoric acid
concentration meter S1 is higher than the reference phosphoric acid
concentration, the controller 9 controls the DIW supply system 91
such that the DIW is supplied to the storage tank 7b. Thus, the
phosphoric acid concentration in the storage tank 7b is reduced,
and is adjusted to the reference phosphoric acid concentration.
[0124] Further, when the output from the phosphoric acid
concentration meter S1 is lower than the reference phosphoric acid
concentration, the controller 9 controls the phosphoric acid
aqueous solution supply system 93 such that a phosphoric acid
aqueous solution having higher phosphoric acid concentration than
the reference phosphoric acid concentration is supplied to the
storage tank 7b. Thus, the phosphoric acid concentration in the
storage tank 7b is increased, and is adjusted to the reference
phosphoric acid concentration.
[0125] Further, when the output from the phosphoric acid
concentration meter S1 is lower than the reference phosphoric acid
concentration, the controller 9 controls the nitrogen gas supply
system 92 such that a nitrogen gas is supplied to the storage tank
7b. In this case, evaporation of the phosphoric acid aqueous
solution in the storage tank 7b is promoted. Thus, the phosphoric
acid concentration in the storage tank 7b is increased, and is
adjusted to the reference phosphoric acid concentration.
[0126] The controller 9 may supply one of the phosphoric acid
aqueous solution having high phosphoric acid concentration and the
nitrogen gas to the storage tank 7b, or may supply both to the
storage tank 7b in order to increase the phosphoric acid
concentration in the storage tank 7b.
[0127] As described above, an operation of adjusting the phosphoric
acid concentration of the phosphoric acid aqueous solution in the
storage tank 7b to the reference phosphoric acid concentration is
referred to as a phosphoric acid concentration adjustment.
[0128] As shown in FIG. 2, supply of the phosphoric acid aqueous
solution to the processing liquid nozzle 3 and the circulation
temperature control are started in the first tank 5 at the time t1.
The circulation temperature control is also started in the second
tank 6 and the third tank 7. In the third tank 7, the liquid
collection and the phosphoric acid concentration adjustment are
started.
[0129] The supply of the phosphoric acid aqueous solution from the
first tank 5 to the processing liquid nozzle 3 is continued until
the processing of the substrate W is finished. Further, the
circulation temperature control in the first tank 5, the second
tank 6 and the third tank 7 is continued until the processing of
the substrate W is finished.
[0130] When it is detected by the liquid surface sensor S3 that the
height of the liquid surface in the storage tank 5b of the first
tank 5 is lowered by a predetermined height from the second
reference height L2, the controller 9 of FIG. 1 opens the valve 21
of FIG. 1 (the time t2).
[0131] Thus, the supply of the phosphoric acid aqueous solution
from the second tank 6 to the first tank 5 is started. As indicated
by a thick arrow A7 in FIG. 4, part of the phosphoric acid aqueous
solution, which has flowed in the branch pipe 20b from the storage
tank 6b of the second tank 6 to pass through the filter 22, is sent
to the storage tank 5b of the first tank 5 through the main pipe
20a. In this manner, the phosphoric acid aqueous solution having
the reference phosphoric acid concentration and the reference
silicon concentration is supplied from the second tank 6 to the
first tank 5. Thus, the height of the liquid surface in the storage
tank 5b is lifted towards the second reference height L2, and the
height of the liquid surface in the storage tank 6b is lowered from
the second reference height L2 (see outlined arrows in FIG. 4)
[0132] When it is detected by the liquid surface sensor S3 that the
height of the liquid surface in the storage tank 5b of the first
tank 5 has reached the second reference height L2, the controller 9
of FIG. 1 stops the supply of the phosphoric acid aqueous solution
from the second tank 6 to the first tank 5 by closing the valve 21
of FIG. 1 (the time t3).
[0133] While the phosphoric acid aqueous solution is supplied from
the second tank 6 to the first tank 5 from the time t2 to the time
t3, the liquid collection and the phosphoric acid concentration
adjustment are concurrently performed in the third tank 7. Thus,
the height of the liquid surface in the storage tank 7b of the
third tank 7 is lifted from the first reference height L1 (see an
outlined arrow in FIG. 4).
[0134] The liquid collection in the third tank 7 is stopped and the
liquid collection in the second tank 6 is started at the time t3.
That is, the controller 9 closes the valve 52 and opens the valve
51 of FIG. 1. Thus, the used phosphoric acid aqueous solution,
which has been collected by the cup CU of the processor 1, is sent
to the storage tank 6b of the second tank 6 (see a thick arrow A8
in FIG. 5). The phosphoric acid concentration adjustment is
concurrently performed with the liquid collection in the second
tank 6.
[0135] Here, in the single-substrate processing apparatus, part of
the processing liquid is discarded by rinse processing and the
like. Therefore, all of the processing liquid that is used for the
processing of the substrate W cannot be collected. Therefore, even
when the height of the liquid surface in the storage tank 6b is
lowered from the second reference height L2 to the first reference
height L1 with the height of the liquid surface in the storage tank
5b being kept at the second reference height L2, the height of the
liquid surface in the storage tank 7b is not lifted from the first
reference height L1 to the second reference height L2.
[0136] The controller 9 of FIG. 1 controls the valve 42 and the new
liquid supply device 8 of FIG. 1 based on the outputs of the liquid
surface sensor S3 of the third tank 7 (FIG. 1) and the silicon
concentration meter S2 such that the height of the liquid surface
in the storage tank 7b is lifted to the second reference height L2
and the silicon concentration of the phosphoric acid aqueous
solution in the storage tank 7b becomes closer to the reference
silicon concentration.
[0137] For example, when the output from the silicon concentration
meter S2 of the third tank 7 is equal to the reference silicon
concentration, the controller 9 opens the valve 42 of FIG. 1. Thus,
as indicated by a thick arrow A9 in FIG. 5, the phosphoric acid
aqueous solution having the reference phosphoric acid concentration
and the reference silicon concentration is supplied from the new
liquid supply device 8 to the third tank 7. As a result, the height
of the liquid surface in the storage tank 7b is lifted to the
second reference height L2, and the silicon concentration in the
storage tank 7b is kept at the reference silicon concentration.
[0138] The controller 9 of the present example can adjust the
silicon concentration in the mixing tank 8a of the new liquid
supply device 8 to a value different from the reference silicon
concentration based on the silicon concentration meter S2 provided
in the new liquid supply device 8.
[0139] When the output from the silicon concentration meter S2 of
the third tank 7 is lower than the reference silicon concentration,
the controller 9 controls the new liquid supply device 8 such that
the silicon concentration in the mixing tank 8a is lifted. Thus, a
phosphoric acid aqueous solution having the silicon concentration
higher than the reference silicon concentration is supplied from
the new liquid supply device 8 to the third tank 7. As a result,
the height of the liquid surface in the storage tank 7b is lifted
to the second reference height L2, and the silicon concentration in
the storage tank 7b is lifted to be adjusted to the reference
silicon concentration.
[0140] Further, when the output from the silicon concentration
meter S2 of the third tank 7 is higher than the reference silicon
concentration, the controller 9 controls the new liquid supply
device 8 such that the silicon concentration in the mixing tank 8a
is reduced. Thus, a phosphoric acid aqueous solution having silicon
concentration lower than the reference silicon concentration is
supplied from the new liquid supply device 8 to the third tank 7.
As a result, the height of the liquid surface in the storage tank
7b is lifted to the second reference height L2, and the silicon
concentration in the storage tank 7b is reduced to be adjusted to
the reference silicon concentration.
[0141] As described above, an operation of lifting the height of
the liquid surface in the storage tank 7b to the second reference
height L2 and adjusting silicon acid concentration of the
phosphoric acid aqueous solution in the storage tank to the
reference silicon acid concentration is referred to as a silicon
concentration adjustment.
[0142] At a time of the silicon concentration adjustment, part of
the phosphoric acid aqueous solution stored in the storage tank 7b
may be discarded through a discard pipe (not shown). Even in such a
case, the phosphoric acid aqueous solution including silicon is
supplied from the new liquid supply device 8 to the storage tank
7b. Therefore, shortage of the phosphoric acid aqueous solution,
which is used for the processing of the substrate W, is
prevented.
[0143] In the silicon concentration adjustment, the silicon
concentration and the phosphoric acid concentration of the
phosphoric acid aqueous solution are adjusted. For example,
similarly to the phosphoric acid concentration adjustment, the
controller 9 of FIG. 1 controls the DIW supply system 91, the
nitrogen gas supply system 92 and the phosphoric acid aqueous
solution supply system 93 based on the output from the phosphoric
acid concentration meter S1 of the third tank 7 such that the
phosphoric acid concentration becomes closer to the reference
phosphoric acid concentration. Thus, even when the phosphoric acid
aqueous solution being supplied from the new liquid supply device 8
to the third tank 7 does not have the reference phosphoric acid
concentration, the phosphoric acid concentration in the storage
tank 7b is adjusted to the reference phosphoric acid
concentration.
[0144] When it is detected by the phosphoric acid concentration
meter S1 and the silicon concentration meter S2 that the phosphoric
acid aqueous solution having the reference phosphoric acid
concentration and the reference silicon concentration is stored in
the storage tank 7b of the third tank 7, the controller 9 stops the
supply of the phosphoric acid aqueous solution from the new liquid
supply device 8 to the third tank 7, and finishes the silicon
concentration adjustment in the third tank 7 (the time t4).
[0145] As shown in FIGS. 2 and 5, the supply of the phosphoric acid
aqueous solution from the first tank 5 to the processor 1 is
continued from the time t3 to the time t4, so that a height of the
liquid surface in the storage tank 5b is lowered from the second
reference height L2. Further, the liquid collection is continued in
the second tank 6, so that a height of the liquid surface in the
storage tank 6b is lifted from the first reference height L1.
[0146] In the present embodiment, a time period, which is required
from the time when the silicon concentration adjustment is started
until the time when the silicon concentration adjustment is
completed in the second tank 6 and the third tank 7, is
sufficiently short as compared to a time period that is required
from the time when the height of the liquid surface in the storage
tank 5b is lowered from the second reference height L2 to the first
reference height L1 by the processing of the substrate W.
[0147] The controller 9 of FIG. 1 may determine the time t4 at
which the silicon concentration adjustment is completed when a
state, in which a height of the liquid surface in the storage tank
7b is equal to the second reference height L2 and the phosphoric
acid concentration and silicon concentration in the storage tank 7b
are at the reference phosphoric acid concentration and the
reference silicon concentration, is continued for a constant time
period.
[0148] The controller 9 starts to supply the phosphoric acid
aqueous solution having the reference phosphoric acid concentration
and the reference silicon concentration from the third tank 7
towards the first tank 5 at the time t4. Thus, as indicated by a
thick arrow A10 in FIG. 6, part of the phosphoric acid aqueous
solution, which has flowed in the branch pipe 20c from the storage
tank 7b of the third tank 7 to pass through the filter 32 is sent
to the storage tank 5b of the first tank 5 through the main pipe
20a. Thus, a height of the liquid surface in the storage tank 5b of
the first tank 5 is lifted towards the second reference height
L2.
[0149] When it is detected that a height of the liquid surface of
the first tank 5 is equal to the second reference height L2, the
controller 9 stops the supply of the phosphoric acid aqueous
solution from the third tank 7 to the first tank 5 (the time t5).
In the second tank 6, a height of the liquid surface in the storage
tank 6b is lifted by the liquid collection from the time t3 to the
time t5.
[0150] At the time t5, the liquid collection in the second tank 6
is stopped, and the liquid collection in the third tank 7 is
started. That is, the controller 9 closes the valve 51 and opens
the valve 52 of FIG. 1. Thus, the used phosphoric acid aqueous
solution, which has been collected by the cup CU of the processor
1, is sent to the storage tank 7b of the third tank 7 (see the
thick arrow A4 of FIG. 7). The phosphoric acid concentration
adjustment is concurrently performed with the liquid collection in
the third tank 7.
[0151] Further, from the time t5, the silicon concentration
adjustment in the second tank 6 is started. That is, the controller
9 opens the valve 41 of FIG. 1 and controls the new liquid supply
device 8. Thus, as indicated by a thick arrow A11 in FIG. 7, the
phosphoric acid aqueous solution in which the silicon concentration
is adjusted is supplied from the new liquid supply device 8 to the
second tank 6. Further, the silicon concentration of the phosphoric
acid aqueous solution in the storage tank 6b is kept at the
reference silicon concentration.
[0152] When it is detected by the silicon concentration meter S2
that the phosphoric acid aqueous solution having the reference
phosphoric acid concentration and the reference silicon
concentration is stored in the storage tank 6b of the second tank
6, the controller 9 of FIG. 1 stops the supply of the phosphoric
acid aqueous solution from the new liquid supply device 8 to the
second tank 6 and finishes the silicon concentration adjustment in
the second tank 6 (the time t6).
[0153] As shown in FIGS. 2 and 7, the supply of the phosphoric acid
aqueous solution from the first tank 5 to the processor 1 is
continued from the time t5 to the time t6, so that the height of
the liquid surface in the storage tank 5b is lowered from the
second reference height L2. Further, because the liquid collection
is continued in the third tank 7, the height of the liquid surface
in the storage tank 7b is lifted from the first reference height
L1. The phosphoric acid concentration adjustment is concurrently
performed with the liquid collection in the third tank 7.
[0154] As shown in FIG. 2, the supply of the phosphoric acid
aqueous solution is performed from the second tank 6 to the first
tank 5 from the time t6. Thus, the height of the liquid surface in
the storage tank 6b of the second tank 6 is lowered from the second
reference height L2, and the height of the liquid surface in the
storage tank 5b of the first tank 5 is lifted towards the second
reference height L2. The supply of the phosphoric acid aqueous
solution from the second tank 6 to the first tank 5 is performed
until the height of the liquid surface of the first tank 5 reaches
the second reference height L2 (the time t7).
[0155] At the time t7 and later, the operation being performed from
the time t3 to the time t5 and the operation being performed from
the time t5 to the time t7 are repeated until the processing of the
substrates W is stopped. Thus, the phosphoric acid aqueous solution
having the reference phosphoric acid concentration and the
reference silicon concentration is always kept in the first tank
5.
[0156] In the first tank 5, moisture of part of the phosphoric acid
aqueous solution may evaporate. In this case, the phosphoric acid
concentration and silicon concentration of the phosphoric acid
aqueous solution stored in the storage tank 5b is changed.
Therefore, the controller 9 may perform the phosphoric acid
concentration adjustment in the first tank 5 based on the output of
the phosphoric acid concentration meter S1 of the first tank 5.
Further, the controller 9 may output an abnormal signal when the
output of the silicon concentration meter S2 of the first tank 5
indicates an abnormal value.
[0157] Further, when the phosphoric acid aqueous solution is not
supplied to the first tank 5 due to abnormality or the like of the
apparatus, the height of the liquid surface in the storage tank 5b
may be lower than the first reference height L1. Therefore, the
controller 9 may output the abnormal signal when the output of the
liquid surface sensor S3 of the first tank 5 indicates a level that
is lower than the first reference height L1.
[0158] (3) Effects
[0159] In the substrate processing apparatus 100 according to the
first embodiment, the processing liquid being used in the processor
1 is collected and reused. Therefore, the substrate processing can
be performed with the small amount of processing liquid. Further,
the processing liquid is constantly supplied from the first tank 5
to the processor 1. Therefore, downtime is not generated in the
substrate processing apparatus 100, so that the substrate
processing can be performed with high productivity.
[0160] There is a problem that the concentration is unstable and
fluctuates because a rinse liquid and the like are mixed in the
collected processing liquid from the processor 1. Therefore, the
processing liquid in the second tank 6 (or the third tank 7)
collecting the processing liquid from the processor 1 has the
unstable phosphoric acid concentration and silicon concentration
during the liquid collection period. Therefore, the second tank 6
(or the third tank 7) collecting the processing liquid from the
processor 1 cannot directly supply the processing liquid to the
processor 1.
[0161] In the substrate processing apparatus 100, the concentration
adjustment is performed for a predetermined time period (a period
from the time t5 to the time t6 (or the time t3 to the time t4))
after the collection of the processing liquid from the processor 1
is finished. Thus, the processing liquid, which is adjusted to have
the reference phosphoric acid concentration and the reference
silicon concentration, can be supplied from the second tank 6 (or
the third tank 7) to the first tank 5.
[0162] If the above-mentioned concentration adjustment is performed
after the liquid collection in a case in which there are only two
tanks, a time period in which one of the liquid collection and the
substrate processing is stopped is generated.
[0163] FIG. 8 is a first comparative example in which the
above-mentioned concentration adjustment (the silicon concentration
adjustment including the phosphoric acid concentration adjustment)
is performed on a processing liquid stored in each tank in the case
in which there are only two tanks. The two tanks being used in the
first comparative example are referred to as a tank A and a tank B.
The tank A supplies the processing liquid to a processor 1 in a
period from a time t1 to a time t3. The tank B collects the
processing liquid from the processor 1 from the time t1 to the time
t2. The tank B then performs the concentration adjustment (the
adjustment of the silicon concentration and phosphoric acid
concentration of the processing liquid) while the liquid collection
is stopped from the time t2 to the time t3. The adjustment of the
silicon concentration and phosphoric acid concentration is
performed from the time t2 to a time t3, so that the processing
liquid in the tank B can be stabilized to have the reference
silicon concentration and the reference phosphoric acid
concentration.
[0164] The tank B supplies the processing liquid to the processor 1
from the time t3 to a time t5. On the other hand, the tank A
performs the liquid collection from the time t3 to a time t4, and
performs the concentration adjustment while the liquid collection
is stopped from the time t4 to the time t5.
[0165] In this manner, in the first comparative example, a period
in which the liquid collection is stopped (a period from the time
t2 to the time t3, and a period from the time t4 to the time t5) is
generated. The processing liquid, which has been used in the
processor 1 during this period, is discarded without being
collected, so that the processing liquid cannot be effectively
utilized.
[0166] FIG. 9 is a second comparative example in which the
above-mentioned concentration adjustment (the silicon concentration
adjustment including the phosphoric acid concentration adjustment)
is performed on the processing liquid stored in each tank in the
case in which there are only two tanks. Similarly to the first
comparative example, two tanks being used in the second comparative
example are referred to as a tank A and a tank B. The tank A
supplies the processing liquid to a processor 1 during a period
from a time t1 to a time t2. The tank B collects the processing
liquid from the processor 1 during the period from the time t1 to
the time t2. During a period from the time t2 to a time t3, the
concentration adjustment in the tank B is performed while supply of
the processing liquid from the tank A to the processor 1 is
stopped.
[0167] The tank B supplies the processing liquid from the processor
1 during a period from the time t3 to a time t4. The tank A
collects the processing liquid from the processor 1 during the
period from the time t3 to the time t4. During a period from the
time t4 to a time t5, the concentration adjustment in the tank A is
performed while supply of the processing liquid from the tank B to
the processor 1 is stopped.
[0168] In this manner, in the second comparative example, downtime
in which substrate processing in the processor 1 is stopped (during
the period from the time t2 to the time t3 and during the period
from the time t4 to the time t5) is generated, so that productivity
of the substrate processing is reduced.
[0169] In a case of the substrate processing apparatus 100
according to the first embodiment, the processing liquid collection
is not stopped dissimilarly to the first comparative example. That
is, as shown in FIG. 2, the liquid collection is constantly
alternately performed in the second tank 6 and the third tank 7.
Therefore, the substrate processing apparatus 100 can efficiently
utilize the processing liquid.
[0170] Further, in the case of the substrate processing apparatus
100 according to the first embodiment, the downtime is not
generated dissimilarly to the second comparative example. That is,
as shown in FIG. 2, the first tank 5 continues to constantly supply
the processing liquid towards the processor 1. Therefore, the
substrate processing apparatus 100 can perform the substrate
processing with high productivity.
[0171] FIGS. 10A and 10B are diagrams for explaining the effects of
the substrate processing apparatus 100 according to the first
embodiment. The operation being performed from the time t4 to the
time t5 of FIG. 2 in the first, second and third tanks 5, 6, 7 is
shown in FIG. 10A. Further, the operation being performed from the
time t6 to the time t7 of FIG. 2 in the first, second and third
tanks 5, 6, 7 is shown in FIG. 10B.
[0172] As shown in FIGS. 10A and 10B, the supply operation of the
phosphoric acid aqueous solution from the first tank 5 to the
processor 1 (see thick solid arrows) and the liquid collection from
the processor 1 to the second tank 6 or the third tank 7 (see thick
dotted lines) are concurrently performed. The phosphoric acid
aqueous solution is supplied from the first tank 5 to the
processing liquid nozzle 3 of FIG. 1 by the supply operation.
Further, the phosphoric acid aqueous solution is collected from the
processor 1 to the second tank 6 or the third tank 7 by the liquid
collection. Further, the silicon concentration in the third tank 7
or the second tank 6 is adjusted by the silicon concentration
adjustment.
[0173] In this case, the phosphoric acid aqueous solution being
collected from the processor 1 is not supplied to a tank in which
the silicon concentration adjustment is performed. Therefore, the
silicon concentration can be accurately adjusted in the tank in
which the silicon concentration adjustment is performed.
[0174] As shown in FIGS. 10A and 10B, the adjusted processing
liquid is supplied to the processor 1 through the first tank 5
after the silicon concentration adjustment is completed (see thick
one-dot dash arrows). Thus, the substrate W can be processed by the
phosphoric acid aqueous solution in which the concentration is
accurately adjusted. Further, the tank in which the liquid
collection is performed is changed to a tank for the silicon
concentration adjustment after the liquid collection is finished.
Thus, the silicon concentration of the collected phosphoric acid
aqueous solution can be accurately adjusted.
[0175] In this manner, it is possible to accurately adjust the
silicon concentration of the phosphoric acid aqueous solution
without stopping the supply operation of the phosphoric acid
aqueous solution to the processor 1 and the liquid collection. As a
result, uniform processing can be performed with high accuracy
while a reduction in processing efficiency of the substrates W is
prevented.
[0176] Further, because the collected phosphoric acid aqueous
solution is not supplied but the adjusted phosphoric acid aqueous
solution is supplied to the first tank 5 of the present example,
contamination of the first tank 5 is prevented, and the phosphoric
acid concentration and silicon concentration of the phosphoric acid
aqueous solution in the first tank 5 is kept constant.
[2] Second Embodiment
[0177] In the first embodiment, the first tank 5 is only used to
supply the phosphoric acid aqueous solution to the processor 1.
Further, the second tank 6 and the third tank 7 are used to collect
the phosphoric acid aqueous solution and adjust the silicon
concentration and phosphoric acid concentration of the phosphoric
acid aqueous solution.
[0178] However, the phosphoric acid aqueous solution may be
supplied from each of the first tank 5, the second tank 6 and the
third tank 7 to the processor 1. Further, each of the first tank 5,
the second tank 6 and the third tank 7 may be used to collect the
phosphoric acid aqueous solution and adjust the silicon
concentration and phosphoric acid concentration of the phosphoric
acid aqueous solution.
[0179] FIG. 11 is a schematic view showing the configuration of a
substrate processing apparatus according to the second embodiment.
The substrate processing apparatus 100 of FIG. 11 has the same
configuration as the substrate processing apparatus 100 of FIG. 1
except for the following points.
[0180] As shown in FIG. 11, in the present example, the main pipe
20a of the second supply pipe 20 of FIG. 1 is connected to a
portion, of a first supply pipe 10, that is located between a valve
12 and a heater 11. Further, a pipe having one main pipe 50a and
three branch pipes 50b, 50c, 50d is used as a collection pipe 50.
The branch pipes 50b, 50c, 50d are connected to the main pipe 50a.
The main pipe 50a of the collection pipe 50 is connected to a cup
CU, and the three branch pipes 50d, 50b, 50c are respectively
connected to storage tanks 5b, 6b, 7b of first, second and third
tanks 5, 6, 7. A valve 51 is inserted into the branch pipe 50b, a
valve 52 is inserted into the branch pipe 50c and a valve 53 is
inserted into the branch pipe 50d.
[0181] Further, a pipe having one main pipe 40a and three branch
pipes 40b, 40c, 40d is used as a third supply pipe 40. The branch
pipes 40b, 40c are connected to the main pipe 40a. The main pipe
40a of the third supply pipe 40 is connected to a new liquid supply
device 8, and the two branch pipes 40b, 40c are respectively
connected to the storage tanks 6b, 7b of the respective second and
third tanks 6, 7. A valve 41 is inserted into the branch pipe 40b,
and a valve 42 is inserted into the branch pipe 40c.
[0182] The branch pipe 40d is connected to a portion, of the branch
pipe 40b, that is located at the upstream of the valve 41. The
branch pipe 40d is connected to the storage tank 5b of the first
tank 5. A valve 43 is inserted into the branch pipe 40d.
[0183] The above-mentioned configuration enables the phosphoric
acid aqueous solution stored in each of the first, second and third
tanks 5, 6, 7 to be supplied to a processor 1 by opening of one
valve of valves 12, 21, 31 and closing of another valve of valves
12, 21, 31 in the substrate processing apparatus 100 of the present
example.
[0184] Further, it is possible to selectively supply the phosphoric
acid aqueous solution collected by the cup CU of the processor 1 to
any one of the first, second and third tanks 5, 6, 7 by opening one
valve of the valves 51, 52, 53 and closing another valve of the
valves 51, 52, 53. That is, the liquid collection can be performed
in each of the first, second and third tanks 5, 6, 7.
[0185] Further, it is possible to selectively supply the phosphoric
acid aqueous solution in which the silicon concentration and the
phosphoric acid concentration are adjusted to any one of the first,
second and third tanks 5, 6, 7 by the new liquid supply device 8 by
opening one valve of the valves 41, 42, 43 and closing another
valve of the valves 41, 42, 43. That is, the silicon concentration
adjustment can be performed in each of the first, second and third
tanks 5, 6, 7.
[0186] FIGS. 12A to 12C are diagrams for explaining the effects of
the substrate processing apparatus according to the second
embodiment. FIG. 12A shows an example in which the supply operation
of the phosphoric acid aqueous solution from the first tank 5 to
the processor 1 (see a thick solid arrow) and the liquid collection
from the processor 1 to the second tank 6 (see a thick dotted arrow
in FIG. 12) are concurrently performed.
[0187] FIG. 12B shows an example in which the supply operation of
the phosphoric acid aqueous solution from the third tank 7 to the
processor 1 (see a thick solid arrow) and the liquid collection
from the processor 1 to the first tank 5 (see a thick dotted arrow)
are concurrently performed.
[0188] FIG. 12C shows an example in which the supply operation of
the phosphoric acid aqueous solution from the second tank 6 to the
processor 1 (see a thick solid arrow) and the liquid collection
from the processor 1 to the third tank 7 (see a thick dotted arrow)
are concurrently performed.
[0189] In the present example, as shown in FIGS. 12A to 12C, the
phosphoric acid aqueous solution is supplied from any one tank of
the first, second and third tanks 5, 6, 7 to the processing liquid
nozzle 3 of FIG. 1, and the phosphoric acid aqueous solution is
collected from the processor 1 to another tank. Further, the
silicon concentration adjustment including the adjustment of the
phosphoric acid concentration is performed in the tank in which
neither the supply operation nor the liquid collection is
performed. Thus, the silicon concentration and the phosphoric acid
concentration can be accurately adjusted.
[0190] The adjusted phosphoric acid aqueous solution is supplied
from the tank that is used for the silicon concentration adjustment
to the processor 1 after the silicon concentration adjustment is
completed. Thus, the substrate W can be processed by the phosphoric
acid aqueous solution in which the concentration is accurately
adjusted. Further, the tank in which the liquid collection is
performed is changed to the tank for the silicon concentration
adjustment. Thus, the silicon concentration of the collected
phosphoric acid aqueous solution can be accurately adjusted.
[0191] In this manner, it is possible to accurately adjust the
silicon concentration and phosphoric acid aqueous solution of the
phosphoric acid aqueous solution without stopping the supply
operation of the phosphoric acid aqueous solution to the processor
1 and the liquid collection. As a result, uniform processing can be
performed with high accuracy while a reduction in processing
efficiency of the substrates W is prevented.
[3] Third Embodiment
[0192] A substrate processing apparatus according to the present
embodiment is a single-substrate processing apparatus that
processes substrates one by one. In the substrate processing
apparatus, a high temperature phosphoric acid aqueous solution
(H.sub.3PO.sub.4+H.sub.2O) including siloxane is supplied as a high
temperature chemical liquid to a substrate on which a silicone
oxide film made of silicon oxide (SiO.sub.2) and a silicon nitride
film made of silicon nitride (Si.sub.3N.sub.4) are formed. In this
case, the phosphoric acid aqueous solution includes siloxane, so
that an etching rate of the silicone oxide film is reduced. Thus,
the silicon nitride film is selectively etched.
[0193] Siloxane is a collective term for a compound including a
Si--O--Si bond of compounds that are made of dioxide, oxygen and
hydrogen, and is represented by a general formula
(H.sub.3SiO--H.sub.2SiO).sub.n--SiH.sub.3).
[0194] In the following description, a liquid mixture of ammonia
water and hydrogen peroxide water is referred to as SC1. Further,
deionized water is referred to as DIW.
[0195] (1) Configuration of Substrate Processing Apparatus
[0196] FIG. 13 is a schematic view showing the configuration of the
substrate processing apparatus according to the third embodiment.
As shown in FIG. 13, the substrate processing apparatus 500 mainly
includes a processor 501, an SC1 supply device 102, a rinse liquid
supply device 103, a phosphoric acid aqueous solution supply device
104, a DIW supply device 105, a nitrogen gas supply device 106 and
a controller 109.
[0197] The processor 501 has a chamber 190. The chamber 190 has
four side surface portions, a ceiling portion and a bottom portion.
A transport opening 191 for transporting substrates W between
outside of the chamber 190 and inside of the chamber 190 is formed
at one side surface portion of the chamber 190. A shutter 192 for
opening and closing the transport opening 191 is provided at the
one side surface portion. Further, a FFU (Fan Filter Unit) 193,
which generates a downward air flow in the chamber 190, is provided
on the ceiling of the chamber 190.
[0198] A spin chuck 111, a cup 112, an SC1 nozzle 113, a rinse
nozzle 114, a phosphoric acid nozzle 115, a support arm 116, an arm
driving device 117, the chamber 190 and a heating device 200 are
provided inside of the chamber 190.
[0199] The spin chuck 111 has a spin motor 11a, a spin base 11b and
a plurality of chuck pins 11c. The spin motor 11a is provided such
that a rotation shaft is parallel to a vertical direction. The spin
base 11b has a disc shape, and is attached to an upper end of the
rotation shaft of the spin motor 11a in a horizontal attitude. The
plurality of chuck pins 11c are provided on an upper surface of the
spin base 11b, and holds a peripheral edge of a substrate W. With
the plurality of spin chucks 11c holding the substrate W, the spin
motor 11a is operated. Thus, the substrate W is rotated about a
vertical axis.
[0200] While the mechanical spin chuck 111 holding the peripheral
edge of the substrate W is used in the present example as described
above, the invention is not limited to this. A suction-type spin
chuck, which holds a lower surface of the substrate W by suction,
may be used instead of the mechanical spin chuck.
[0201] The SC1 nozzle 113 and the rinse nozzle 114 are respectively
provided to be movable between a processing position above the
substrate W held by the spin chuck 111 and a waiting position
beside the substrate W.
[0202] An SC1 supply system P1 is provided to connect the SC1
supply device 102 to the SC1 nozzle 113. The SC1 nozzle 113
supplies the SC1 supplied from the SC1 supply device 102 to the
substrate W rotated by the spin chuck 111.
[0203] A rinse liquid supply system P2 is provided to connect the
rinse liquid supply device 103 to the rinse nozzle 114. The rinse
nozzle 114 supplies a rinse liquid supplied from the rinse liquid
supply device 103 to the substrate W rotated by the spin chuck 111.
In the present example, the DIW is used as the rinse liquid. As the
rinse liquid, carbonated water, ozonated water, magnetic water,
regenerated water (hydrogen water) or ionized water, or an organic
solvent such as IPA (isopropyl alcohol) can be used instead of the
DIW.
[0204] Inside of the chamber 190, the arm driving device 117
extending upward from the bottom portion is provided at a position
beside the spin chuck 111. The bar-shaped support arm 116 is
attached to an upper end of the arm driving device 117 to extend in
a horizontal direction. The heating device 200 is attached to a tip
end of the support arm 116. Further, the phosphoric acid nozzle 115
is fixed to a portion of the heating device 200.
[0205] The arm driving device 117 includes a motor, for example,
and rotates the tip end of the support arm 116 about a rotation
shaft of the motor. Thus, the phosphoric acid nozzle 115 and the
heating device 200 are provided to be movable between the
processing position above the substrate W held by the spin chuck 11
and the waiting position beside the substrate W.
[0206] The heating device 200 includes a plurality of lamp heaters
HT1 to HT4 that generate electromagnetic waves (see FIG. 14), and
heats the substrate W and the phosphoric acid aqueous solution
supplied to the substrate W by heat of radiation from above the
substrate W. The electromagnetic waves being generated from the
plurality of lamp heaters HT1 to HT4 mainly include infrared rays
and have wavelengths not less than ultraviolet rays and not more
than far infrared rays. In the present example, tungsten-halogen
lamps are used as the lamp heaters HT1 to HT4. Xenon arc lamps,
graphite heaters or the like may be used as the lamp heaters HT1 to
HT4 instead of the tungsten-halogen lamps.
[0207] A phosphoric acid supply system P3 is provided to connect
the phosphoric acid aqueous solution supply device 104 to the
phosphoric acid nozzle 115. A DIW supply system P4 is provided to
connect the DIW supply device 105 to the phosphoric acid nozzle
115. The phosphoric acid nozzle 115 supplies the phosphoric acid
aqueous solution supplied from the phosphoric acid aqueous solution
supply device 104 and the DIW supplied from the DIW supply device
105 to the substrate W rotated by the spin chuck 111.
[0208] Here, the phosphoric acid aqueous solution being supplied
from the phosphoric acid aqueous solution supply device 104 to the
phosphoric acid nozzle 115 is heated to a boiling point
corresponding to the phosphoric acid concentration (not less than
140.degree. C. and not more than 160.degree. C., for example).
Further, siloxane is included in the phosphoric acid aqueous
solution supplied to the phosphoric acid nozzle 115.
[0209] A nitrogen gas supply system P5 is provided to connect the
nitrogen gas supply device 106 to the heating device 200. Thus, a
nitrogen gas is supplied from the nitrogen gas supply device 106 to
the heating device 200. The function of the nitrogen gas supplied
to the heating device 200 will be described below.
[0210] Each of the SC1 supply system P1, the rinse liquid supply
system P2, the phosphoric acid supply system P3, the DIW supply
system P4 and the nitrogen gas supply system P5 is constituted by a
pipe into which a valve, a heater, a filter, a pump and the like
are inserted.
[0211] Further, the cup 112 is provided to surround the spin chuck
111 in the chamber 190. The cup 112 is lowered at a time of
carrying of the substrate W into the spin chuck 111 and a time of
carrying of the substrate W out from the spin chuck 111, and is
lifted at a time of supply of the processing liquid (the SC1, the
DIW and the phosphoric acid aqueous solution in the present
example) to the substrate W.
[0212] At the time of supply of the processing liquid to the
rotating substrate W, an upper end of the cup 112 is located at a
position further upward than the substrate W. Thus, a processing
liquid being shaken off from the substrate W is caught by the cup
112. The processing liquid being caught by the cup 112 is discarded
through the discard pipe. Part or all of the processing liquid
being caught by the cup 112 may be reutilized.
[0213] An exhaust duct (not shown) is coupled to a bottom portion
of the cup 112. An atmosphere inside of the cup 112 is discharged
to the outside of the chamber 190 via this exhaust duct.
[0214] The controller 109 is constituted by a CPU (Central
Processing Unit) and a memory, or a microcomputer and the like. A
system program is stored in the memory of the controller 109. The
controller 109 controls the operation of each constituent element
of the substrate processing apparatus 500.
[0215] (2) Summary of Operation of Substrate Processing
Apparatus
[0216] The controller 109 controls the operation of each
constituent element of the substrate processing apparatus 500 such
that a series of processing described below is performed. First,
the substrate W is carried into the chamber 190, and the carried
substrate W is held by the spin chuck 111. A silicone oxide film
and a silicon nitride film are formed on the main surface (the
upper surface in the present example) of the carried substrate
W.
[0217] Next, the substrate being held by the spin chuck 111 is
rotated. Further, the arm driving device 117 of the FIG. 13 is
operated, so that the phosphoric acid nozzle 115 is moved to a
position above the center of the substrate W held by the spin chuck
111.
[0218] The phosphoric acid aqueous solution including siloxane is
supplied from the phosphoric acid aqueous solution supply device
114 to the phosphoric acid nozzle 115 at a position with the tip
end of the phosphoric acid nozzle 115 being opposite to the center
of the substrate W. Thus, a liquid film of the phosphoric acid
aqueous solution is formed on the upper surface of the rotating
substrate W, and the silicon nitride film of the silicon oxide film
and the silicon nitride film on the substrate W is selectively
etched.
[0219] At this time, with the liquid film of the phosphoric acid
aqueous solution being formed, the heating device 200 is opposite
to a portion of the upper surface of the substrate W, and electric
currents flow in the lamp heaters. Thus, infrared rays are
generated from the lamp heaters, and the portion, of the substrate
W, being opposite to the heating device 200 and the liquid film of
the phosphoric acid aqueous solution are heated by the heat of
radiation. In this case, the phosphoric acid aqueous solution being
formed on the rotating substrate W is kept at a temperature close
to a boiling point corresponding to the phosphoric acid
concentration. Thus, an etching rate of the silicon nitride film
can be kept high.
[0220] Here, when moisture of the phosphoric acid aqueous solution
on the substrate W is evaporated, pyrophosphoric acid
(H.sub.4P.sub.2O.sub.7) is produced in the phosphoric acid aqueous
solution. The pyrophosphoric acid etches the silicone oxide film.
Therefore, when the phosphoric acid aqueous solution is heated to
the boiling point, a ratio of an etching amount of silicon nitride
film relative to an etching amount of silicone oxide film
(hereinafter referred to as an etching selection ratio) is
reduced.
[0221] Therefore, in the present example, the DIW is suitably
supplied from the DIW supply device 105 to the phosphoric acid
nozzle 115 during heating of the liquid film of the phosphoric acid
aqueous solution in order to inhibit the silicon oxide film from
being etched by the pyrophosphoric acid. Thus, because the same
amount of DIW as the evaporated water is supplied to the liquid
film of the phosphoric acid aqueous solution, generation of the
pyrophosphoric acid is reduced. As a result, the etching selection
ratio can be kept high.
[0222] Thereafter, the supply of the phosphoric acid aqueous
solution and the DIW to the substrate W is stopped as a
predetermined time period elapses. Further, the phosphoric acid
nozzle 115 and the heating device 200 are moved to the waiting
position beside the substrate W. Further, the phosphoric acid
aqueous solution on the substrate W is shaken off.
[0223] Subsequently, the rinse nozzle 114 is moved to the
processing position above the substrate W, and a rinse liquid is
supplied to the rotating substrate W. Thus, a remaining phosphoric
acid aqueous solution on the substrate W is washed off by the rinse
liquid.
[0224] Next, the supply of the rinse liquid to the substrate W is
stopped, and the rinse nozzle 114 is moved to the waiting position.
Further, the SC1 nozzle 113 is moved to the processing position,
and the SC1 is supplied to the substrate W. Thereafter, the supply
of the SC1 to the substrate W is stopped, and the rinse liquid is
supplied to the substrate W. Finally, the supply of the rinse
liquid to the substrate W is stopped, and the rinse liquid on the
substrate W is shaken off to be dried. The dried and processed
substrate W is carried out from the chamber 190.
[0225] (3) Configuration of Heating Device
[0226] FIG. 14 is a plan view of the heating device 200 of FIG. 13.
FIG. 14 shows a state of the heating device 200 when the liquid
film of the phosphoric acid aqueous solution is heated. As shown in
FIG. 14, the heating device 200 includes a casing 210, a cover
member 250 and a plurality (four in the present example) of lamp
heaters HT1 to HT4. The lamp heaters HT1 to HT4 are stored in the
casing 210. The cover member 250 is provided to cover an upper
portion of the casing 210. The heating device 200 has a
substantially sectorial planer external shape.
[0227] FIG. 15 is a plan view showing the cover member 250 being
detached from the casing 210 of FIG. 14, FIG. 16 is a side view of
one side of the heating device 200 of FIG. 14 as viewed in a
direction of the arrow Q of FIG. 15, and FIG. 17 is a side view of
the other side of the heating device 200 of FIG. 14 as viewed in
the direction of the arrow R of FIG. 15. FIG. 18 is a cross
sectional view taken along the line A-A of FIG. 14, FIG. 19 is a
cross sectional view taken along the line B-B of FIG. 14 and FIG.
20 is a cross sectional view taken along the line C-C of FIG.
16.
[0228] As shown in FIG. 15, the four lamp heaters HT1 to HT4 are
arranged in one direction in the casing 210. Each lamp heater HT1
to HT4 has the configuration in which a filament is arranged in a
silica pipe. Further, each lamp heater HT1 to HT4 has a curved
portion HTa being formed in a circular arc shape and a linear
portion HTb extending upward from both ends of the curved portion
THa (see FIG. 18, described below). A terminal is provided at the
upper end of each linear portion HTb.
[0229] Wirings (not shown) are respectively connected to two
terminals of each lamp heater HT1 to HT4. The wirings being
connected to each lamp heater HT1 to HT4 are drawn out to the
outside of the casing 210 via through holes (not shown) formed in
the cover member 250, and are connected to a power device. Electric
currents flow in the lamp heaters HT1 to HT4 through each wiring,
so that the infrared rays are mainly generated from the curved
portions HTa.
[0230] Hereinafter, the four lamp heaters HT1 to HT4 are
respectively referred to as a first lamp heater HT1, a second lamp
heater HT2, a third lamp heater HT3 and a fourth lamp heater
HT4.
[0231] The first lamp heater HT1, the second lamp heater HT2, the
third lamp heater HT3 and the fourth lamp heater HT4 are arranged
in this order from a rotational center of the substrate W in an
outward radial direction of the substrate W.
[0232] With the heating device 200 being located at the processing
position, the heating device 200 is supported by the support arm
116 such that the first lamp heater HT1 being located at an
innermost position is arranged at a position close to the
rotational center of the substrate W and the fourth lamp heater HT4
being located at an outermost position is arranged at a position
slightly leaned towards the rotational center of the substrate W
than a position right over the outer periphery of the substrate W.
Therefore, the first to fourth lamp heaters HT1 to HT4 can heat a
sectorial-shape region extending from the center to the outer
periphery of the substrate W all at once.
[0233] Further, a heating profile of the first to fourth lamp
heaters HT1 to HT4 on the upper surface of the substrate W are set
such that a temperature of the liquid film of the phosphoric acid
aqueous solution on the substrate W can be increased at a constant
speed in a radial direction of the substrate W. For example, it is
difficult to increase the temperature of the region of the outer
periphery of the substrate W and its vicinity due to being cooled
by an air stream caused by the rotation of the substrate W. In the
present embodiment, in order to compensate this, the third lamp
heater HT3 is located at a position slightly leaned towards the
outer periphery of the substrate as compared to a case in which the
first to fourth lamp heaters HT1 to HT4 are arranged at equal
intervals in the radial direction of the substrate W. That is, the
distance between the third lamp heater HT3 and the fourth lamp
heater HT4 is set smaller than the distance between the first lamp
heater HT1 and the second lamp heater HT2. Thus, the region of the
outer periphery of the substrate W and its vicinity can be heated
with a relatively larger amount of heat than a region of the
rotational center of the substrate W.
[0234] Further, curvature of the first to fourth lamp heaters HT1
to HT4 when seen in top view is substantially equal to curvature of
the outer periphery of the substrate W.
[0235] As described below, the etching of the substrate W is
performed with the heating device 200 being fixed at the processing
position while the substrate W is rotated. The first to fourth lamp
heaters HT1 to HT4 of the heating device 200 can heat the
sectorial-shape region extending from the center to the outer
periphery of the substrate W all at once. Further, the heating
profile of the first to fourth lamp heaters HT1 to HT4 are set such
that the temperature of the liquid film of the phosphoric acid
aqueous solution is increased at the constant speed in the radial
direction of the substrate W. Further, the curvature of the first
to fourth lamp heaters HT1 to HT4 is substantially equal to the
curvature of the outer periphery of the substrate W. Therefore, the
first to fourth lamp heaters HT1 to HT4 can increase the
temperature of the liquid film of the phosphoric acid aqueous
solution at a constant speed not only in the radial direction but
also in a circumferential direction of the substrate W. Thus,
in-plane uniformity of the etching rate of the substrate W can be
increased.
[0236] Infrared rays being mainly generated from the first to
fourth lamp heaters HT1 to HT4 of the present example include near
infrared rays, intermediate infrared rays and far infrared rays,
and have wavelengths of not less than about 750 nm and not more
than about 1000 nm.
[0237] A flange plate 211 made of a silica glass is provided at an
upper end of the casing 210. A plurality of through holes 211h are
formed at substantially constant intervals in the flange plate
211.
[0238] A plurality of screw holes corresponding to the plurality of
through holes 211h of the flange plate 211 are formed in the cover
member 250 of FIG. 14. A plurality of screws SC are fitted into the
plurality of screw holes of the cover member 250 through the
plurality of through holes 211h of the flange plate 211. Thus, the
cover member 250 is attached to the casing 210 via the flange plate
211.
[0239] The cover member 250 is made of PTFE
(polytetrafluoroethylene), for example. A resin material, such as
PVC (polyvinyl chloride), PPS (polyphenylenesulfide), PFA
(Tetrafluoroethylene Perfluoroalkylvinylether Copolymer) or the
like besides the PTFE can be used as a material for the cover
member 250.
[0240] As shown in FIGS. 18 and 19, a reflection plate RF for
reflecting the infrared rays, which is emitted upward from the
first to fourth lamp heaters HT1 to HT4, downward is provided at a
center portion of a lower surface of the cover member 250.
[0241] As shown in FIG. 20, the casing 210 has a first sidewall
portion SW1, a second sidewall portion SW2, a third sidewall
portion SW3 and a fourth sidewall portion SW4. The first sidewall
portion SW1 is opposite to the fourth sidewall portion SW4. The
second sidewall portion SW2 and the third sidewall portion SW3 are
provided to respectively connect both ends of the first sidewall
portion SW1 to both ends of the fourth sidewall portion SW4.
[0242] The first sidewall portion SW1 is constituted by a
plate-shape first inner member 222a and a plate-shape first outer
member 212a located outside of the first inner member 222a. A first
side passage GS1 is formed between the first inner member 222a and
the first outer member 212a.
[0243] The second sidewall portion SW2 is constituted by a
plate-shape second inner member 222b and a plate-shape second outer
member 212b located outside of the second inner member 222b. A
second side passage GS2 is formed to communicate with the first
side passage GS1, and a discharge opening 292 extending in the
vertical direction is provided to extend along the one lateral side
of the fourth sidewall portion SW4, between the second inner member
222b and the second outward member 212b.
[0244] The third sidewall portion SW3 is constituted by a
plate-shape third inner member 222c and a plate-shape third outer
member 212c located outside of the third inner member 222c. A third
side passage GS3 is formed to communicate with the first side
passage GS1, and a discharge opening 293 extending in the vertical
direction is provided to extend along the other lateral side of the
fourth sidewall portion SW4, between the third inner member 222c
and the third outer member 212c.
[0245] The fourth sidewall portion SW4 is constituted by a
plate-shape member 223. The plate-shape member 223 has a
rectangular elongated plate-shape that is curved in a circular arc
shape. It is desirable that curvature of the plate-shape member 223
coincides with the curvature of the outer periphery of the
substrate W.
[0246] As shown in FIG. 19, the first sidewall portion SW1 and the
fourth sidewall portion SW4 are joined to the lower surface of the
flange plate 211 by welding. Further, as shown in FIG. 18, the
second sidewall portion SW2 and the third sidewall portion SW3 are
joined to the lower surface of the flange plate 211 by welding.
[0247] The first and third inner members 222a to 222c, the first to
third outer members 212a to 212c and the plate-shape member 223 are
respectively made of silica glasses that transmit infrared rays.
The first to third inner members 222a to 222c may be integrally
formed with one another or separately formed from one another.
Further, the first to third outer members 212a to 212c may be
integrally formed with one another or separately formed from one
another.
[0248] As shown in FIGS. 18 and 19, the casing 210 further has a
bottom portion BM. The bottom portion BM is constituted by a first
plate-shape member 224 and a second plate-shape member 213 that is
located below the first plate-shape member 224. The first
plate-shape member 224 and the second plate-shape member 213 are
made of silica glasses that transmits infrared rays. The first
plate-shape member 224 is joined to lower ends of the first to
third inner members 222a to 222c and a lower end of the plate-shape
member 223 by welding. The second plate-shape member 213 is joined
to lower ends of the first to third outer members 212a to 212c by
welding.
[0249] A gas passage GS0 communicating with the above-mentioned
first side passage GS1, the second side passage GS2 and the third
side passage GS3 is formed, and a discharge opening 291 extending
in the horizontal direction along the lower side of the fourth
sidewall portion SW4 is provided, between the first plate-shape
member 224 and the second plate-shape member 213.
[0250] As shown in FIG. 17, the discharge openings 292, 293, 291
extend along both lateral sides and a lower side of the fourth
sidewall portion SW4.
[0251] As shown in FIGS. 15 and 16, a gas introduction pipe 214 is
joined to a portion in the vicinity of the upper end of the second
outer member 212b by welding. The gas introduction pipe 214 is made
of a silica glass, and is provided to communicate with the third
side passage GS3 between the third outer member 212c and the third
inner member 222c, and a space outside of the casing 210.
[0252] As shown in FIG. 14, the heating device 200 is supported by
the support arm 116 of FIG. 13 to be still with the fourth sidewall
portion SW4 being located substantially right over the outer
periphery of the substrate W and the first sidewall portion SW1
being located in the vicinity of the center of the substrate W at a
time of heating of the phosphoric acid aqueous solution on the
rotating substrate W. At this time, the first plate-shape member
224 and the second plate-shape member 213, which constitute the
bottom portion BM of FIG. 17, are arranged to be parallel to the
upper surface of the substrate W. The second sidewall portion SW2
and the third sidewall portion SW3 extend in the radial direction
of the substrate W. Further, the discharge openings 292, 293, 291
of FIG. 17 are located substantially right over the outer periphery
of the substrate W. The discharge openings 292, 293, 291 may be
located above positions further outward than the outer periphery of
the substrate W. Either way, the discharge openings 292, 293, 291
are arranged at positions at which the nitrogen gas can be
discharged in the outward radial direction of the substrate W from
a position further outward in the outward radial direction of the
substrate W than the outer periphery of the substrate W, that is,
an outer periphery of the liquid film of the phosphoric acid
aqueous solution formed on the upper surface of the substrate
W.
[0253] (4) Function and Effects of Nitrogen Gas Supplied to Heating
Device
[0254] In the heating device 200 having the above-mentioned
configuration, the nitrogen gas supply system P5 of FIG. 13 is
connected to the gas introduction pipe 214 of FIGS. 15 and 16. A
room-temperature nitrogen gas is supplied from the nitrogen gas
supply device 106 of FIG. 13 to the third side passage GS3 in the
casing 210 through the nitrogen gas supply system P5 and the gas
introduction pipe 214.
[0255] FIG. 21 is a horizontal cross sectional view showing a flow
of the nitrogen gas in the heating device 200, and FIG. 22 is a
vertical cross sectional view showing the flow of the nitrogen gas
in the heating device 200.
[0256] The room-temperature nitrogen gas supplied from the gas
introduction pipe 214 to the third side passage GS3 flows in the
third side passage GS3, the first side passage GS1, the second side
passage GS2 and the gas passage GS0 as indicated by the thick
arrows in FIGS. 21 and 22, and is discharged from the discharge
openings 291, 292, 293.
[0257] FIG. 23 is a side view of the heating device 200 when the
liquid film of the phosphoric acid aqueous solution is heated. As
shown in FIG. 23, the phosphoric acid aqueous solution is supplied
from the phosphoric acid nozzle 115 to the substrate W held by the
spin chuck 111, and the liquid film of the phosphoric acid aqueous
solution is formed on the rotating substrate W.
[0258] At this time, the number of rotations of the substrate W is
kept about 1 rpm to 500 rpm, for example.
[0259] Further, the distance D1 between a lower surface of the
heating device 200 (a lower surface of the second plate-shape
member 213) and the upper surface of the substrate W held by the
spin chuck 111 is set to 5 mm, for example. Further, the distance
D2 between the upper end of the cup 112 and the upper surface of
the substrate W held by the spin chuck 111 is set to 22 mm, for
example.
[0260] In this state, electric currents respectively flow in the
first to fourth lamp heaters HT1 to HT4 of the heating device 200,
so that the infrared rays are generated from the first to fourth
lamp heaters HT1 to HT4. Part of the generated infrared rays are
permeated through the first plate-shape member 224 and the second
plate-shape member 213, and the liquid film of the phosphoric acid
aqueous solution on the substrate W is irradiated with the infrared
rays. Further, the rest of the generated infrared rays are
permeated through the first to third inner members 222a to 222c
(see FIG. 21) and the first to third outer members 212a to 212c
(see FIG. 21), and the liquid film of the phosphoric acid aqueous
solution on the substrate W is irradiated with the infrared rays.
Thus, the liquid film of the phosphoric acid aqueous solution is
heated.
[0261] In this case, the temperatures of the first plate-shape
member 224 and the first to third inner members 222a to 222c are
also increased by the heat of radiation from the first to fourth
lamp heaters HT1 to HT4 and the heat that is conducted from the
first to fourth lamp heaters HT1 to HT4. Further, the temperatures
of the second plate-shape member 213 and the first to third outer
members 212a to 212c are increased by the heat of radiation from
the first to fourth lamp heaters HT1 to HT4 and the like.
[0262] The heating device 200 is close to the upper surface of the
substrate W, so that splashes of the phosphoric acid aqueous
solution may splash from the liquid film of the phosphoric acid
aqueous solution and the like and adhere to the second plate-shape
member 213 and the first to third outer members 212a to 212c.
Further, a lower surface of the second plate-shape member 213 may
directly come into contact with the phosphoric acid aqueous
solution depending on the size of the distance D1 of FIG. 23 and
the thickness of the liquid film of the phosphoric acid aqueous
solution.
[0263] When the high temperature phosphoric aqueous solution
adheres to the second plate-shape member 213 and the first to third
outer members 212a to 212c, corrosion reaction or the like may
occur between the silica glass in the member and the phosphoric
acid aqueous solution, so that fogging occurs in the surfaces of
the second plate-shape member 213 and the first to third outer
members 212a to 212c.
[0264] In the heating device 200 according to the present
embodiment, as indicated by the thick dotted arrows in FIG. 23, the
room-temperature nitrogen gas flows in the first to third side
passages GS1 to GS3 (see FIG. 21) and the gas passage GS0, and is
discharged from the discharge openings 291, 292, 293 (see FIGS. 21
and 22).
[0265] The room-temperature nitrogen gas flows, so that the first
to third side passages GS1 to GS3 (see FIG. 21) and the gas passage
GS0 are cooled. Thus, increases in temperatures of the first
plate-shape member 224, the first to third inner members 222a to
222c, the second plate-shape member 213 and the first to third
outer members 212a to 212c are inhibited. Thus, even if splashes of
the phosphoric acid aqueous solution adhere to the second
plate-shape member 214 and the first to third outer members 212a to
212c, each member does not react with the phosphoric acid aqueous
solution, so that fogging does not occur in the surface.
[0266] In this manner, fogging does not occur in the first
plate-shape member 224, the first to third inner members 222a to
222c, the second plate-shape member 213 and the first to third
outer members 212a to 212c, so that transparency is maintained.
Therefore, the infrared rays being generated from the first to
fourth lamp heaters HT1 to HT4 are permeated without being
prevented by these members, and the liquid film of the phosphoric
acid aqueous solution on the substrate W is uniformly irradiated
with the infrared rays.
[0267] Further, the discharge openings 291 to 293 of the heating
device 200 are located at positions further outward than the outer
periphery of the substrate W (and the liquid film of the phosphoric
acid aqueous solution formed on the upper surface) in the outward
radial direction of the substrate W when seen in top view.
Therefore, the nitrogen gas discharged from the discharge openings
291 to 293 is discharged to the outside of the chamber 190 from a
duct of the bottom portion of the cup 112 (not shown) without
passing through a space above the liquid film of the phosphoric
acid aqueous solution. Therefore, the nitrogen gas being discharged
from the discharge openings 291 to 293 is prevented from locally
cooling the liquid film of the phosphoric acid aqueous
solution.
[0268] An etching rate of the silicone oxide film and the silicon
nitride film on the substrate W by the phosphoric acid aqueous
solution is largely depended on a temperature of the phosphoric
acid aqueous solution. For example, the etching rate is high at a
position at which a liquid temperature of the phosphoric acid
aqueous solution is high, and the etching rate is low at another
position at which the liquid temperature of the phosphoric acid
aqueous solution is low. Therefore, when the liquid film of the
phosphoric acid aqueous solution on the substrate W is locally
cooled, in-plane uniformity of the etching rate of the substrate W
by the phosphoric acid aqueous solution may be impaired.
[0269] In the present heating device 200, the nitrogen gas being
discharged from the discharge openings 291, 292, 293 is prevented
from locally cooling the phosphoric acid aqueous solution on the
substrate W. Therefore, the in-plane uniformity of the etching rate
is not impaired due to the nitrogen gas discharged from the heating
device 200. As a result, uniform etching processing of the silicone
oxide film and the silicon nitride film by the heated phosphoric
acid aqueous solution becomes possible.
[0270] In the present embodiment, at least one of a temperature and
a flow rate of the nitrogen gas supplied to the heating device 200
is preferably adjusted such that the temperatures of the second
plate-shape member 213 and the first to third outer members 212a to
212c are kept at not less than the room temperature (about
23.degree. C.) and not more than 100.degree. C., for example. In
this case, even when the phosphoric acid aqueous solution adheres
to the second plate-shape member 213 and the first to third outer
members 212a to 212c, fogging is prevented from being generated in
the surfaces of the second plate-shape member 213 and the first to
third outer members 212a to 212c.
[0271] In the present embodiment, with the heating device 200 being
supported at the processing position above the substrate W, the
first to fourth lamp heaters HT1 to HT4 are arranged in the radial
direction of the substrate W such that the region from the center
to the outer periphery in the radial direction of the substrate W
is irradiated with infrared rays. Thus, the region from the center
to the outer periphery in the radial direction of the substrate W
is simultaneously irradiated with infrared rays at the time of
heating of the phosphoric acid aqueous solution. Therefore, the
entire phosphoric acid aqueous solution on the substrate W is
uniformly heated by the rotation of the substrate W.
[0272] Further, each of the first to fourth lamp heaters HT1 to HT4
is formed in a circular arc shape to extend along the outer
periphery of the substrate W. Thus, the phosphoric acid aqueous
solution on the substrate W is uniformly irradiated with infrared
rays in the circumferential direction of the substrate W. Thus, the
phosphoric acid aqueous solution on the substrate W is uniformly
heated in the circumferential direction.
[4] Other Embodiments
[0273] (1) While the phosphoric acid aqueous solution being a
chemical liquid is used as the processing liquid and the phosphoric
acid concentration and silicon concentration of the phosphoric acid
aqueous solution are adjusted in the first and second embodiments,
the invention is not limited to this. Another chemical liquid,
which requires the concentration adjustment, may be used according
to the content of processing of the substrate W.
[0274] As another chemical liquid, buffered hydrogen fluoride
(BHF), diluted hydrofluoric acid (DHF), hydrofluoric acid (HF),
hydrochloric acid, sulfuric acid, nitric acid, acetic acid, oxalic
acid, an aqueous solution such as ammonia water or a liquid mixture
of these may be used, for example. Further, as the liquid mixture,
a liquid mixture (SPM) of high temperature sulfuric acid
(H.sub.2SO.sub.4) and hydrogen peroxide (H.sub.2O.sub.2), a mixed
solution (SC1) of ammonia and hydrogen peroxide water, or a liquid
mixture (SC2) of hydrochloric acid (HC1) and hydrogen peroxide
water can be used, for example.
[0275] Even when these chemical liquids are used, the concentration
of the specific component in the chemical liquid is adjusted in the
tank in which the liquid collection is not performed. Thus,
accurate concentration adjustment of the chemical liquid becomes
possible.
[0276] (2) While the first, second and third tanks 5, 6, 7 are used
as tanks for storing the phosphoric acid aqueous solution in the
above-mentioned processor 1 in the first and second embodiments,
the invention is not limited to this. The larger number of tanks
may be provided in the substrate processing apparatus 100.
[0277] (3) In the above-mentioned processor 1, the processing
liquid nozzle 3 supplying the phosphoric acid aqueous solution to
the substrate W is provided in the first and second embodiments.
Additionally, in the processor 1, a rinse liquid nozzle supplying a
rinse liquid to the substrate W may be provided or another
processing liquid nozzle supplying another chemical liquid other
than the phosphoric acid aqueous solution to the substrate W may be
provided. This varies the contents of processing of the substrate W
in the processor 1.
[0278] As the rinse liquid, pure water, carbonated water, ozonated
water, magnetic water, regenerated water (hydrogen water) or
ionized water, or an organic solvent such as IPA (isopropyl
alcohol) can be used.
[0279] (4) While the silicon concentration of the phosphoric acid
aqueous solution being used for the processing of the substrate W
is adjusted to the reference silicon concentration in the silicon
concentration adjustment in the first and second embodiments, the
invention is not limited to this. The silicon concentration of the
phosphoric acid aqueous solution may be adjusted within a
predetermined range including the reference silicon concentration
in the silicon concentration adjustment. In this case, it is
possible to shorten a time period required for the silicon
concentration adjustment by enlarging the adjustment range as
necessary.
[0280] (5) In the substrate processing apparatus 100 according to
the first and second embodiments, the heating device 200 according
to the third embodiment may be used as the heating device 4. In
this case, the SC1 supply device 102, the rinse liquid supply
device 103 and the nitrogen gas supply device 106 of FIG. 13 are
further provided in the substrate processing apparatus 100
according to the first and second embodiments. Thus, in the
substrate processing apparatus 100 according to the first and
second embodiments, similar processing to the third embodiment can
be performed. As a result, the phosphoric acid aqueous solution on
the substrate W is uniformly heated, and uniform and efficient
processing becomes possible.
[0281] (6) In the third embodiment, with the heating device 200
being at the processing position, the discharge openings 291 to 293
are located at positions further outward than the outer periphery
of the substrate W (and the liquid film of the phosphoric acid
aqueous solution formed on the upper surface) in the outward radial
direction of the substrate W when seen in top view. However, the
discharge openings 291 to 293 may be located at positions slightly
further inward than the outer periphery of the substrate W in the
inward radial direction of the substrate W.
[0282] (7) While a silica glass transmitting infrared rays is used
as the material that constitutes the first to fourth sidewall
portions SW1 to SW4 and the bottom portion BM of the casing 210 in
the third embodiment, the invention is not limited to this. As the
material that constitutes the first to fourth sidewall portions SW1
to SW4 and the bottom portion BM, an inorganic matter (a sapphire
glass and the like) such as another glass that transmits infrared
rays, or resin may be used instead of the silica glass.
[0283] (8) While the nitrogen gas is used as the gas that is
supplied to the heating device 200 in the third embodiment, the
invention is not limited to this. Another inert gas such as argon
may be used as the gas supplied to the heating device 200 instead
of the nitrogen gas.
[0284] (9) The heating device 200 according to the third embodiment
is used to heat the phosphoric acid aqueous solution. However, the
invention is not limited to this. The heating device 200 may be
used to heat another chemical liquid that requires processing at a
high temperature. There are a liquid mixture (SPM) of sulfuric acid
(H.sub.2SO.sub.4), hydrogen peroxide (H.sub.2O.sub.2) and the like
as another chemical liquid.
[5] Correspondences Between Constituent Elements in Claims and
Parts in Preferred Embodiments
[0285] In the following paragraphs, non-limiting examples of
correspondences between various elements recited in the claims
below and those described above with respect to various preferred
embodiments of the present invention are explained.
[0286] (1) In the first and second embodiments, the substrate
processing apparatus 100 is an example of a substrate processing
apparatus, the processing liquid nozzle 3 is an example of a
processing liquid nozzle, the processor 1 is an example of a
processing unit, the first tank 5 is an example of a supply tank,
the second tank 6 is an example of a collection tank, the third
tank 7 is an example of an adjustment tank, and the first, second
and third tanks 5, 6, 7 are examples of a plurality of tanks.
[0287] Further, the supply operation of the phosphoric acid aqueous
solution to the processing liquid nozzle 3 is an example of a
supply operation, the liquid collection operation is an example of
a collection operation, the silicon concentration adjustment
including the adjustment of the phosphoric acid concentration is an
example of an adjustment operation, the first supply pipes 10, the
pumps 15, 24, 34, the valves 12, 17, 21, 26, 31, 36, 41, 42, 43,
51, 52, 53, the circulation pipes 16, 25, 35, the second supply
pipe 20, the third supply pipe 40 and the collection pipe 50 are
examples of a path changing mechanism.
[0288] Further, the first, second and third tanks 5, 6, 7 are
respectively examples of first, second and third tanks, the first
supply pipe 10, the valve 12 and the pump 15 of FIG. 1 are examples
of a first processing liquid supply system, the collection pipe 50,
the valves 51, 52 of FIG. 1 are examples of a processing liquid
collection system of claim 3, the new liquid supply device 8 is an
example of a concentration adjustment device, the second supply
pipe 20, the valves 21, 31 and the pumps 24, 34 are examples of a
second processing liquid supply system, the first supply pipe 10,
the valves 12, 21, 31, the pumps 15, 24, 34 and the second supply
pipe 20 of FIG. 11 are examples of a processing liquid supply
system, and the collection pipe 50 and the valves 51, 52, 53 of
FIG. 11 are examples of a processing liquid collection system of
claim 5. Further, the silicon nitride film is an example of a first
film, and the silicone oxide film is an example of a second
film.
[0289] (2) In the third embodiment, the substrate processing
apparatus 500 is an example of a substrate processing apparatus,
the substrate W is an example of a substrate, the spin chuck 111 is
an example of a substrate holding device, the phosphoric acid
aqueous solution supply device 104 and the phosphoric acid supply
system P3 are examples of a chemical liquid supply system, the
heating device 200 is an example of a heating device, the nitrogen
gas supply device 106 and the nitrogen gas supply system P5 are
examples of a gas supply system, the first to fourth lamp heaters
HT1 to HT4 are examples of an infrared ray generator, the first
plate-shape member 224 is an example of a first plate-shape member,
the second plate-shape member 213 is an example of a second
plate-shape member, the gas passage GS0 is an example of a gas
passage and the discharge opening 291 is an example of a first
discharge opening.
[0290] Further, the casing 210 is an example of a casing, the
bottom portion BM is an example of a bottom portion, the first
sidewall portion SW1 is an example of a first sidewall portion, the
second sidewall portion SW2 is an example of a second sidewall
portion, the third sidewall portion SW3 is an example of a third
sidewall portion, the fourth sidewall portion SW4 is an example of
a fourth sidewall portion, the first inner member 222a is an
example of a first inner member, the first outer member 212a is an
example of a first outer member, the first side passage GS1 is an
example of a first side passage, the second inner member 222b is an
example of a second inner member, the second outer member 212b is
an example of a second outer member, the second side passage GS2 is
an example of a second side passage, the discharge opening 292 is
an example of a second discharge opening, the third inner member
222c is an example of a third inner member, the third outer member
212c is an example of a third outer member, the third side passage
GS3 is an example of a third side passage, and the discharge
opening 293 is an example of a third discharge opening.
[0291] (3) As each of constituent elements recited in the claims,
various other elements having configurations or functions described
in the claims can be also used.
[0292] While preferred embodiments of the present invention have
been described above, it is to be understood that variations and
modifications will be apparent to those skilled in the art without
departing the scope and spirit of the present invention. The scope
of the present invention, therefore, is to be determined solely by
the following claims.
INDUSTRIAL APPLICABILITY
[0293] The present invention can be effectively utilized for
processing of a substrate.
* * * * *