U.S. patent application number 14/435558 was filed with the patent office on 2015-09-17 for substrate processing device.
The applicant listed for this patent is SCREEN HOLDINGS CO., LTD.. Invention is credited to Akio Hashizume, Takashi Ota.
Application Number | 20150258582 14/435558 |
Document ID | / |
Family ID | 50487930 |
Filed Date | 2015-09-17 |
United States Patent
Application |
20150258582 |
Kind Code |
A1 |
Hashizume; Akio ; et
al. |
September 17, 2015 |
SUBSTRATE PROCESSING DEVICE
Abstract
A substrate processing apparatus includes a substrate holding
unit that holds a substrate in a horizontal position, a processing
liquid supplying unit that supplies the processing liquid to the
surface of the substrate held by the substrate holding unit, a
substrate rotating unit that rotates the substrate held by the
substrate holding unit, a heater that opposes the substrate held by
the substrate holding unit, a heater supporting member that
supports the heater independently of the substrate holding unit and
a moving unit that moves at least one of the substrate holding unit
and the heater supporting member such that the heater and the
substrate held by substrate holding unit approach/leave each
other.
Inventors: |
Hashizume; Akio; (Kyoto,
JP) ; Ota; Takashi; (Kyoto, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SCREEN HOLDINGS CO., LTD. |
Kyoto-shi, Kyoto |
|
JP |
|
|
Family ID: |
50487930 |
Appl. No.: |
14/435558 |
Filed: |
August 29, 2013 |
PCT Filed: |
August 29, 2013 |
PCT NO: |
PCT/JP2013/073195 |
371 Date: |
April 14, 2015 |
Current U.S.
Class: |
156/345.15 ;
134/105; 134/56R; 156/345.23 |
Current CPC
Class: |
H01L 21/31138 20130101;
B08B 3/08 20130101; G03F 7/42 20130101; B05C 11/08 20130101; H01L
21/31133 20130101; B05C 9/14 20130101; H01L 21/67051 20130101; B05C
11/1015 20130101; H01L 21/67109 20130101; H01L 21/67034
20130101 |
International
Class: |
B08B 3/08 20060101
B08B003/08; B05C 9/14 20060101 B05C009/14; B05C 11/10 20060101
B05C011/10; B05C 11/08 20060101 B05C011/08 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 16, 2012 |
JP |
2012-229139 |
Claims
1. A substrate processing apparatus that uses a processing liquid
to process a substrate, the substrate processing apparatus
comprising: a substrate holding unit that holds the substrate; a
processing liquid supplying unit that supplies the processing
liquid to a surface of the substrate held by the substrate holding
unit; a substrate rotating unit that rotates the substrate held by
the substrate holding means unit; a heater supporting member that
supports a heater independently of the substrate holding unit and a
moving unit that moves at least one of the substrate holding unit
and the heater supporting member such that the heater and the
substrate held by the substrate holding unit approach/leave each
other.
2. The substrate processing apparatus according to claim 1, wherein
the heater includes an opposing surface that is parallel to and
opposite the substrate held by the substrate holding unit, and
heats the substrate with radiation heat of the opposing surface,
and the opposing surface is divided into a plurality of opposing
regions that can make amounts of heat generated per unit area
differ from each other.
3. The substrate processing apparatus according to claim 2, wherein
the amounts of heat generated per unit area in the plurality of
opposing regions are set such that as the opposing regions extend
away from a rotation axis by rotation of the substrate with the
substrate rotating unit, the amounts are increased.
4. The substrate processing apparatus according to claim 2, wherein
the plurality of opposing regions include a circular region with
the rotation axis as a center and one or a plurality of annular
regions that surround an outer circumference of the circular
region.
5. The substrate processing apparatus according to claim 4, wherein
at least one of the annular regions is divided into a plurality of
divided regions in a circumferential direction, and the plurality
of divided regions are provided such that the divided regions can
make the amounts of heat generated per unit area of the opposing
surface differ from each other.
6. The substrate processing apparatus according to claim 1, wherein
the substrate holding unit includes a plate-shaped base portion and
a substrate supporting portion that is attached to the base portion
and that supports the substrate while the substrate supporting
portion is spaced apart from the base portion, and the heater is
disposed so as to be housed in a space partitioned by the base
portion and the substrate supported by the substrate supporting
portion.
7. The substrate processing apparatus according to claim 6, wherein
the heater supporting member includes a support rod which is
inserted through the base portion without contact with the base
portion in a thickness direction and whose one end is coupled to
the heater.
8. The substrate processing apparatus according to claim 1, wherein
the processing liquid supplying unit selectively supplies plural
kinds of the processing liquid to the surface of the substrate, and
the substrate processing apparatus further comprising a control
portion that controls the moving unit so that the positional
relationship between the substrate and the heater corresponds to
the kind of the processing liquid supplied to the substrate.
9. The substrate processing apparatus according to claim 8, the
control portion controls the heater so that an output level of the
heater corresponds to the kind of the processing liquid supplied to
the substrate.
Description
TECHNICAL FIELD
[0001] The present invention relates to a substrate processing
apparatus that processes substrates such as semiconductor wafers,
glass substrates for liquid crystal display devices, substrates for
plasma display devices, substrates for FED (Field Emission Display)
devices, substrates for optical disks, substrates for magnetic
disks, substrates for magneto-optical disks, substrates for
photomasks, ceramic substrates and substrates for solar cell.
BACKGROUND ART
[0002] In production processes for semiconductor devices or liquid
crystal display devices, for example, processing for supplying a
processing liquid to surfaces of substrates, such as semiconductor
wafers or glass substrates for liquid crystal display panels, to
clean the surface of the substrate with the processing liquid are
performed.
[0003] For example, a substrate processing apparatus that performs
cleaning processing of a single substrate processing type to
process a single at a time includes a spin chuck that rotates the
substrate while holding the substrate substantially horizontally
and a nozzle that supplies a processing liquid to the surface of
the substrate rotated by the spin chuck.
[0004] In the processing of the substrate, the substrate is rotated
together with the spin base of the spin chuck. Then, a chemical
liquid is supplied from the nozzle around the rotation center of
the surface of the substrate being rotated. The chemical liquid
supplied onto the surface of the substrate receives a centrifugal
force produced by the rotation of the substrate and flows on the
surface of the substrate toward a peripheral edge portion. In this
way, the chemical liquid flows over the entire surface of the
substrate, and thus chemical liquid processing on the surface of
the substrate is achieved.
[0005] Then, after the chemical liquid processing, rinse processing
is performed that washes away the chemical liquid adhered to the
substrate with pure water. In other words, the pure water is
supplied from the nozzle to the surface of the substrate that is
being rotated by the spin chuck, and the pure water is spread by
receiving the centrifugal force produced by the rotation of the
substrate, with the result that the chemical liquid adhered to the
surface of the substrate is washed away.
[0006] As the substrate processing apparatus of the single
substrate processing type described above, a substrate processing
apparatus as disclosed in Patent Literature 1 below is known that
incorporates a heater in the spin base of the spin chuck and that
heats the substrate placed on the spin base to a high temperature.
Hence, the chemical liquid on the part in contact with the surface
of the substrate is increased in temperature, and thus it is
possible to enhance the processing capacity of the chemical liquid,
with the result that the processing rate in the chemical liquid
processing can be enhanced.
CITATION LIST
Patent Literature
[0007] Patent Literature 1: Japanese Patent Application Publication
No. 2008-4879
SUMMARY OF INVENTION
Technical Problem
[0008] After the completion of the chemical liquid processing
(high-temperature processing), when it is necessary to perform
processing (low-temperature processing) at a low temperature, while
the temperature of the substrate is sufficiently decreased, it is
necessary to wait for the start of the low-temperature processing.
However, the temperature of the heater is not decreased immediately
after the heater is turned from on (driven state) to off. Hence, a
certain time after the heater is turned off, the heater continues
to heat the substrate. Hence, it takes a long time to sufficiently
decrease the temperature of the heater, with the result that the
entire processing time may be prolonged.
[0009] There is a case where in the chemical liquid processing
(high-temperature processing), the surface temperature (the
temperature of the heater) of the spin base is heated to an
extremely high temperature. However, since power needs to be
supplied via a rotating electrical contact to the heater
incorporated in the rotatable spin base, the amount of power
supplied to the heater is limited, with the result that there is an
upper limit for the set temperature of the heater. Hence, it is
likely that it is impossible to heat the substrate to a desired
high temperature.
[0010] Hence, it is an object of the present invention to provide a
substrate processing apparatus that can perform low-temperature
processing immediately after high-temperature processing using a
heater.
[0011] It is another object of the present invention to provide a
substrate processing apparatus that can heat, with a heater, a
substrate to a desired high-temperature.
Solution To Problem
[0012] A substrate processing apparatus according to the present
invention is adapted to process a substrate, and includes a
substrate holding means that holds the substrate; a processing
liquid supplying means that supplies the processing liquid to a
surface of the substrate held by the substrate holding means; a
substrate rotating means that rotates the substrate held by the
substrate holding means; a heater that is disposed opposite the
substrate held by the substrate holding means and that heats the
substrate; a heater supporting member that supports the heater
independently of the substrate holding means and a moving means
that moves at least one of the substrate holding member and the
heater supporting member such that the heater and the substrate
held by the substrate holding means approach/leave each other.
[0013] With this arrangement, it is possible to change the spacing
between the heater and the substrate held by the substrate holding
means. When the spacing between the heater and the substrate is
narrow, the substrate is heated by the heater to a high
temperature. Then, in this state, the spacing between the heater
and the substrate is significantly increased, and thus it is
possible to reduce the amount of heat given to the substrate. In
this way, it is possible to cool the substrate. In other words, a
short time after high-temperature processing using the heater,
low-temperature processing can be performed.
[0014] Since the heater is not supported by the substrate holding
means, even while the substrate is being rotated, the heater is not
rotated but remains stationary. In other words, it is not necessary
to provide an arrangement of a rotatable heater, and hence the
supply of power to the heater does not need to be performed via a
rotating electrical contact. Hence, since the amount of power
supplied to the heater is not limited, it is possible to heat the
substrate to a desired high temperature.
[0015] In one preferred embodiment of the invention, the heater
includes an opposing surface that is parallel to and opposite the
substrate held by the substrate holding means, and heats the
substrate with radiation heat of the opposing surface, and the
opposing surface is divided into a plurality of opposing regions
that can make the amounts of heat generated per unit area differ
from each other.
[0016] For example, when the opposing surface of the heater has a
larger area, it is difficult to keep the temperature of the heater
uniform over the entire area of the opposing surface.
[0017] With this arrangement, the opposing surface of the heater is
divided into a plurality of opposing regions, and the opposing
regions are individually adjusted in temperature. Hence, for
example, the respective opposing regions are adjusted to be a
uniform temperature, and thus it is possible to keep the entire
area of the opposing surface at the uniform temperature.
[0018] In this case, preferably, the amounts of heat generated per
unit area in the plurality of opposing regions are set such that as
the opposing regions extend away from a rotation axis by rotation
of the substrate with the substrate rotating means, the amounts are
increased.
[0019] For example, when a high-temperature processing liquid is
supplied from the processing liquid supplying means to the center
portion on the surface of the substrate, though the processing
liquid has a high temperature immediately after the processing
liquid is supplied to the center portion of the surface of the
substrate, in the process of flowing from the center portion of the
substrate to the peripheral edge portion of the substrate, the
temperature of the liquid is decreased. Hence, on the surface of
the substrate, the temperature of the processing liquid is
relatively high in the center portion, the temperature of the
processing liquid is relatively low in the peripheral edge portion,
the temperature of the center portion of the surface of the
substrate is relatively high by heat exchange between the
processing liquid and the ambient atmosphere and the like and the
temperature of the peripheral edge portion of the surface of the
substrate is relatively low. Consequently, variations in processing
rate on the surface of the substrate such as in which the
processing by the processing liquid proceeds fast in the center
portion of the surface of the substrate and the processing by the
processing liquid proceeds relatively slow in the circumferential
portion of the surface of the substrate may be produced.
[0020] The amounts of heat generated per unit area in the plurality
of opposing regions are set such that as the opposing regions
extend away from a rotation axis by rotation of the substrate, the
amounts are increased, and thus the temperature of the processing
liquid can be uniform over the entire area of the substrate. In
this way, over the entire area of the surface of the substrate, the
uniform processing using the processing liquid can be
performed.
[0021] The plurality of opposing regions may include a circular
region with the rotation axis in the center and one or a plurality
of annular regions that surround the outer circumference of the
circular region.
[0022] In this case, preferably, at least one of the annular
regions is divided into a plurality of divided regions in a
circumferential direction, and the plurality of divided regions are
provided such that the divided regions can make the amounts of heat
generated per unit area in the opposing surface differ from each
other.
[0023] When the opposing surface of the heater has a larger area,
it is difficult to keep the temperature of the heater uniform in
the circumferential direction of the opposing surface. However,
with this arrangement, the opposing surface of the heater is
divided into a plurality of opposing regions in the circumferential
direction, and the opposing regions can be individually adjusted in
temperature. In this way, even when the opposing surface of the
heater has a larger area, it is possible to keep the opposing
surface at a uniform temperature in the circumferential
direction.
[0024] The substrate holding means may include a plate-shaped base
portion and a substrate supporting portion that is attached to the
base portion and that supports the substrate while the substrate
supporting portion is spaced apart from the base portion, and the
heater may be disposed so as to be housed in a space partitioned by
the base portion and the substrate supported by the substrate
supporting portion.
[0025] In this case, preferably, the heater supporting member
includes a support rod which is inserted through the base portion
without contact with the base portion in a thickness direction and
whose one end is coupled to the heater. In this arrangement, the
support rod is inserted through the base portion without contact
with the base portion in the thickness direction. Hence, the heater
disposed so as to be housed in the space between the base portion
and the substrate can be supported independently of the substrate
holding means. In this way, it is possible to realize the support
of the heater described above with a relatively simple
arrangement.
[0026] The aforementioned and other objects, features, and effects
of the present invention will be clarified by the following
description of preferred embodiments with reference to the
accompanying drawings.
BRIEF DESCRIPTION OF DRAWINGS
[0027] FIG. 1 is a cross-sectional view schematically showing the
arrangement of a substrate processing apparatus according to a
first preferred embodiment of the present invention.
[0028] FIG. 2 is a perspective view showing the arrangement of a
heater shown in FIG. 1.
[0029] FIG. 3 is a block diagram showing the electrical arrangement
of the substrate processing apparatus shown in FIG. 1.
[0030] FIG. 4 is a process diagram for illustrating a first
processing example of a resist removing processing performed by the
substrate processing apparatus shown in FIG. 1.
[0031] FIG. 5 is a timing chart for illustrating the processing
example of FIG. 4.
[0032] FIGS. 6A to 6C are schematic drawings for illustrating the
processing example of FIG. 4.
[0033] FIGS. 6D to 6F are schematic drawings for illustrating steps
following FIG. 6C.
[0034] FIGS. 6G to 6I are schematic drawings for illustrating steps
following FIG. 6F.
[0035] FIG. 6J is a schematic drawing for illustrating a step
following FIG. 6I.
[0036] FIG. 7 is a timing chart for illustrating a second
processing example of the resist removing processing performed by
the substrate processing apparatus shown in FIG. 1.
[0037] FIG. 8 is a plan view schematically showing the arrangement
of a substrate processing apparatus according to a second preferred
embodiment of the present invention.
[0038] FIG. 9 is a plan view schematically showing the arrangement
of a substrate processing apparatus according to a third preferred
embodiment of the present invention.
[0039] FIG. 10 is a plan view schematically showing the arrangement
of a substrate processing apparatus according to a fourth preferred
embodiment of the present invention.
DESCRIPTION OF EMBODIMENTS
[0040] FIG. 1 is a cross-sectional view schematically showing the
arrangement of a substrate processing apparatus 1 according to a
first preferred embodiment of the present invention. The substrate
processing apparatus 1 is an apparatus of a single substrate
processing type that is used in processing which removes an
unnecessary resist from the surface of the wafer W, after, for
example, ion implantation processing for implanting an impurity to
the surface (main surface) of a silicon wafer (hereinafter referred
to as a "wafer") W, which is an example of a substrate, and dry
etching processing.
[0041] The substrate processing apparatus 1 includes a spin chuck
(substrate holding means) 2 that holds the wafer W horizontally to
rotate it within a processing chamber 6 partitioned by a dividing
wall (not shown), a heater 3 that is disposed opposite the lower
surface of the wafer W held by the spin chuck 2 and that heats the
wafer W from below, a first chemical liquid nozzle (processing
liquid supplying means) 4 that supplies a sulfuric acid/hydrogen
peroxide mixture liquid (SPM liquid) to the surface (upper surface)
of the wafer W held by the spin chuck 2 and a second chemical
liquid nozzle (processing liquid supplying means) 5 that supplies a
SC1 (ammonia-hydrogen peroxide mixture) to the surface (upper
surface) of the wafer W held by the spin chuck 2.
[0042] As the spin chuck 2, for example, a clamping type spin chuck
is adopted. The spin chuck 2 includes a cylindrical rotation shaft
11 that extends vertically, a disk-shaped spin base (base portion)
12 that is attached to the upper end of the rotation shaft 11 in a
horizontal position, a plurality of clamping members (substrate
supporting portion) 13 that are disposed on the spin base 12 and a
spin motor (substrate rotating means) 14 that is coupled to the
rotation shaft 11. The spin chuck 2 brings the respective clamping
members 13 into contact with the circumferential end surface of the
wafer W, and thereby can hold the wafer W by clamping it from the
circumference. Then, with the wafer W held by the plurality of
clamping members 13, the rotation drive force of the spin motor 14
is input to the rotation shaft 11, and thus the wafer W is rotated
around a vertical rotation axis A1 that passes through the center
of the wafer W.
[0043] The first chemical liquid nozzle 4 is, for example, a
straight type nozzle that discharges the SPM liquid in a state of
continuous flow. A SPM liquid supplying pipe 16 through which a
predetermined high-temperature (for example, about 160.degree. C.)
SPM liquid is supplied from a SPM liquid supply source is connected
to the first chemical liquid nozzle 4. A SPM liquid valve 17 for
opening and closing the SPM liquid supplying pipe 16 is provided in
the SPM liquid supplying pipe 16. When the SPM liquid valve 17 is
opened, the SPM liquid is supplied from the SPM liquid supplying
pipe 16 to the first chemical liquid nozzle 4 whereas when the SPM
liquid valve 17 is closed, the supply of the SPM liquid from the
SPM liquid supplying pipe 16 to the first chemical liquid nozzle 4
is stopped. A first nozzle movement mechanism 18 is coupled to the
first chemical liquid nozzle 4. The first nozzle movement mechanism
18 moves the first chemical liquid nozzle 4 between an upper
position (on the rotation axis A1) of the rotation center of the
wafer W held by the spin chuck 2 and a home position provided in a
position on the side of the spin chuck 2.
[0044] The second chemical liquid nozzle 5 is, for example, a
straight type nozzle that discharges the SC1 in a state of
continuous flow. A SC1 supplying pipe 19 through which the SC1
whose temperature is adjusted to a predetermined high temperature
(for example, about 60.degree. C.) is supplied from a SC1 supply
source is connected to the second chemical liquid nozzle 5. A SC1
valve 20 for opening and closing the SC1 supplying pipe 19 is
provided in the SC1 supplying pipe 19. When the SC1 valve 20 is
opened, the SC1 is supplied from the SC1 supplying pipe 19 to the
second chemical liquid nozzle 5 whereas when the SC1 valve 20 is
closed, the supply of the SC1 from the SC1 supplying pipe 19 to the
second chemical liquid nozzle 5 is stopped. A second nozzle
movement mechanism 21 is coupled to the second chemical liquid
nozzle 5. The second nozzle movement mechanism 21 moves the second
chemical liquid nozzle 5 between the upper position (on the
rotation axis A1) of the rotation center of the wafer W held by the
spin chuck 2 and the home position provided in a position on the
side of the spin chuck 2.
[0045] The substrate processing apparatus 1 further includes a
room-temperature rinse liquid nozzle (processing liquid supplying
means) 30 and a high-temperature rinse liquid nozzle (processing
liquid supplying means) 35. The room-temperature rinse liquid
nozzle 30 is a straight type nozzle that discharges DIW (deionized
water), which is an example of the rinse liquid, in a state of
continuous flow. The DIW of room temperature (for example, about
25.degree. C., the same temperature as the room temperature (RT) of
the processing chamber 6) is discharged from the room-temperature
rinse liquid nozzle 30. The room-temperature rinse liquid nozzle 30
is disposed with its discharge port facing the center portion on
the upper surface of the wafer W held by the spin chuck 2. A
room-temperature rinse liquid supplying pipe 31 through which the
DIW whose temperature is maintained at room temperature is supplied
from a rinse liquid supply source is connected to the
room-temperature rinse liquid nozzle 30. A room-temperature rinse
liquid valve 32 for opening and closing the room-temperature rinse
liquid supplying pipe 31 is provided in the room-temperature rinse
liquid supplying pipe 31. When the room-temperature rinse liquid
valve 32 is opened, the DIW of room temperature is supplied from
the room-temperature rinse liquid supplying pipe 31 to the
room-temperature rinse liquid nozzle 30, and the DIW of room
temperature is discharged from the room-temperature rinse liquid
nozzle 30 to the center portion on the upper surface of the wafer
W.
[0046] The high-temperature rinse liquid nozzle 35 is, for example,
a straight type nozzle that discharges the DIW (deionized water),
which is an example of the rinse liquid, in a state of continuous
flow. The DIW of a predetermined high temperature (for example,
about 80.degree. C.) is discharged from the high-temperature rinse
liquid nozzle 35. The high-temperature rinse liquid nozzle 35 is
disposed with its discharge port facing the center portion on the
upper surface of the wafer W held by the spin chuck 2. A
high-temperature rinse liquid supplying pipe 36 through which the
DIW whose temperature is heated to a high temperature is supplied
from a rinse liquid supply source is connected to the
high-temperature rinse liquid nozzle 35. A high-temperature rinse
liquid valve 37 for opening and closing the high-temperature rinse
liquid supplying pipe 36 is provided in the high-temperature rinse
liquid supplying pipe 36. When the high-temperature rinse liquid
valve 37 is opened, the DIW of high temperature is supplied from
the high-temperature rinse liquid supplying pipe 36 to the
high-temperature rinse liquid nozzle 35, and the DIW of high
temperature is discharged from the high-temperature rinse liquid
nozzle 35 to the center portion on the upper surface of the wafer
W.
[0047] The heater 3 has a disk shape whose diameter is
substantially equal to that of the wafer W or is slightly smaller
than that of the wafer W, and has a horizontal position. The heater
3 includes a first heater plate 3A that is disk-shaped
concentrically with the rotation axis A1, an annular second heater
plate 3B that surrounds the outer circumference of the first heater
plate 3A and an annular third heater plate 3C that surrounds the
outer circumference of the second heater plate 3B. The heater 3 is
disposed in a space 39 between the upper surface of the spin base
12 and the lower surface of the wafer W held by the spin chuck
2.
[0048] FIG. 2 is a perspective view showing the arrangement of the
heater 3. The heater 3 will be described with reference to FIGS. 1
and 2.
[0049] The first heater plate 3A is disk-shaped, and a first
resistor 28A (see FIG. 1) is incorporated in a main body made of
ceramic. On the upper surface of the first heater plate 3A, a first
opposing surface (circular region) 29A that is horizontally flat
and is circular is formed.
[0050] The second heater plate 3B is annular plate-shaped, and a
second resistor 28B (see FIG. 1) is incorporated in a main body
made of ceramic. On the upper surface of the second heater plate
3B, a second opposing surface (annular region) 29B that is
horizontally flat and is annular is formed.
[0051] The third heater plate 3C is annular plate-shaped, and a
third resistor 28C (see FIG. 1) is incorporated in a main body made
of ceramic. On the upper surface of the third heater plate 3C, a
third opposing surface (annular region) 29C that is horizontally
flat and is annular is formed.
[0052] The second heater plate 3B is coupled and fixed via a
coupling unit (not shown) to the first heater plate 3A. In its
fixed state, there is little clearance between the inner
circumference of the second heater plate 3B and the outer
circumference of the first heater plate 3A. The third heater plate
3C is coupled and fixed via a coupling unit (not shown) to the
second heater plate 3B. In its fixed state, there is little
clearance between the inner circumference of the third heater plate
3C and the outer circumference of the second heater plate 3B.
[0053] With the first to third heater plates 3A to 3C coupled to
each other, first to third opposing surfaces 29A to 29C are
included in the same horizontal surface. The first opposing surface
29A is opposite a center region (circular region having about one
third of the wafer diameter with the rotation center of the wafer W
as the center) on the lower surface of the wafer W. The second
opposing surface 29B is opposite a middle region (region other than
the center region and an outer circumferential region, which will
be subsequently described) on the lower surface of the wafer W. The
third opposing surface 29C is opposite the outer circumferential
region (outside region of a circle, with the rotation center of the
wafer W as the center, having about two thirds of the diameter of
the wafer W) on the lower surface of the wafer W. The heater 3 is
supported by a support rod (heater supporting member) 25 from
below.
[0054] The support rod 25 is inserted, through a through hole 24
passing through the spin base 12 and the rotation shaft 11 in a
vertical direction, along the rotation axis A1 in the a vertical
direction (the direction of the thickness of the spin base 12). The
upper end (one end) of the support rod 25 is fixed to the heater 3.
The lower end (the other end) of the support rod 25 is fixed to a
peripheral member below the spin chuck 2, and thus the support rod
25 is held in a vertical position. The support rod 25 is not in
contact with the spin base 12 or the rotation shaft 11 within the
through hole 24, and thus the heater 3 is not supported by the spin
chuck 2. In other words, the heater 3 and the spin chuck 2 are
independent of each other. Hence, even when the spin chuck 2
rotates the wafer W, the heater 3 is not rotated but remains
stationary (non-rotation state).
[0055] A feeder 26A for the first resistor 28A, a feeder 26B for
the second resistor 28B and a feeder 26C for the third resistor 28C
are inserted through the through hole 24. The upper ends of the
feeders 26A, 26B and 26C are connected to the first, second and
third resistors 28A, 28B and 28C, respectively. In the substrate
processing apparatus 1, the power supply to the resistors 28A, 28B
and 28C is performed without intervention of a rotating electrical
contact.
[0056] If a rotatable heater is adopted, it is necessary to perform
power supply to the heater via a rotating electrical contact. In
this case, since the power supply is performed with intervention of
the rotating electrical contact, the amount of power supply to the
heater is limited, with the result that there is a possibility that
wafer W cannot be heated to a desired high temperature.
[0057] On the other hand, in the substrate processing apparatus 1,
since the power supply to the resistors 28A, 28B and 28C is
performed without intervention of a rotating electrical contact,
the amount of power supply is not limited. In this way, it is
possible to heat the wafer W to a desired high temperature.
[0058] Power is supplied to the first resistor 28A, thus the first
resistor 28A generates heat and the first heater plate 3A is
brought into a heated state. In this way, the first opposing
surface 29A functions as a heat generating surface. Power is
supplied to the second resistor 28B, thus the second resistor 28B
generates heat and the second heater plate 3B is brought into a
heated state. In this way, the second opposing surface 29B
functions as a heat generating surface. Furthermore, power is
supplied to the third resistor 28C, thus the third resistor 28C
generates heat and the third heater plate 3C is brought into a
heated state. In this way, the third opposing surface 29C functions
as a heat generating surface. The first opposing surface 29A, the
second opposing surface 29B and the third opposing surface 29C
constitute an opposing surface 29. Here, the power supply to the
first, second and third resistors 28A, 28B and 28C is individually
performed, and the amount of power to each of the resistors 28A,
28B and 28C is individually controlled. Hence, it is possible to
individually control the amount of heat generated (the surface
temperatures of the first opposing surface 29A, the second opposing
surface 29B and the third opposing surface 29C) by the first,
second and third heater plates 3A, 3B and 3C.
[0059] A heater lift mechanism (moving means) 23 that raises and
lowers the heater 3 while maintaining the horizontal position is
coupled to the support rod 25. The heater lift mechanism 23 is
arranged with, for example, a ball screw and a motor. By the drive
of the heater lift mechanism 23, the heater 3 is raised and lowered
between a zero height position (leaving position, see FIG. 6A and
the like) HL0 where its lower surface is separate from the upper
surface of the spin base 12 with a predetermined minute spacing
left therebetween and a third height position (close position, see
FIG. 6B and the like) HL3 where the opposing surface 29 of the
heater 3 is disposed to oppose the lower surface of the wafer W
with a minute spacing W3. In this way, it is possible to change the
spacing between the heater 3 and the wafer W.
[0060] FIG. 3 is a block diagram showing the electrical arrangement
of the substrate processing apparatus 1.
[0061] The substrate processing apparatus 1 has a control portion
40 including a microcomputer. The control portion 40 controls the
operations of the spin motor 14, the first and second nozzle
movement mechanisms 18 and 21 and the like. The control portion 40
controls the amount of heat generated by the heater 3. The control
portion 40 controls the opening and closing operation on the SPM
liquid valve 17, the SC1 valve 20, the room-temperature rinse
liquid valve 32 and the high-temperature rinse liquid valve 37.
[0062] FIG. 4 is a process diagram for illustrating a first
processing example of a resist removing processing performed by the
substrate processing apparatus 1. FIG. 5 is a timing chart for
mainly illustrating the details of control by the control portion
40 from a SPM liquid supplying step in step S3 to spin drying in
step S7, which will be subsequently described. FIGS. 6A to 6J are
schematic drawings for illustrating the first processing example.
In FIGS. 6A to 6J, the illustration of the arrangement below the
spin base 12 is omitted.
[0063] The first processing example of the resist removing
processing will be described below with reference to FIGS. 1 to 5
and FIGS. 6A to 6J.
[0064] In the preferred embodiment, with respect to the first,
second and third heater plates 3A, 3B and 3C of the heater 3 in an
on-state, the amount of heat generated per unit area of the third
opposing surface 29C is set higher than the amount of heat
generated per unit area of the second opposing surface 29B. The
amount of heat generated per unit area of the second opposing
surface 29B is set higher than the amount of heat generated per
unit area of the first opposing surface 29A. In other words, the
amount of heat generated per unit area of the first to third
opposing surfaces 29A, 29B and 29C is set such that it is increased
as they extend away from the rotation axis A1. From a different
point of view, the temperature TC1 of the third opposing surface
29C is set higher than the surface temperature TB1 of the second
opposing surface 29B, and the surface temperature TB1 of the second
opposing surface 29B is set higher than the surface temperature TA1
of the first opposing surface 29A (TC1>TB1>TA1).
[0065] When the heater 3 is turned on, the heater 3 is disposed
close to the wafer W, and thus the wafer W is heated by the heater
3.
[0066] In the resist removing processing, a transport robot (not
shown) is controlled, and the unprocessed wafer W is transported
into the processing chamber 6 (see FIG. 1) (step S1). As shown in
FIG. 6A, the wafer W is passed to the spin chuck 2 with its surface
facing upward. Here, the heater 3 has already been turned on
(driven state), and the height position of the heater 3 is the zero
height level HL0. Furthermore, the first and second chemical liquid
nozzles 4 and 5 are disposed in the home position so as not to
interfere with the transport of the wafer W. In the first
processing example, during the resist removing processing, the
amount of heat generated per unit area of each of the first to
third opposing surfaces 29A, 29B and 29C is kept at a previously
set value. In other words, the output level of the heater 3 is not
changed.
[0067] When the wafer W is held by the spin chuck 2, as shown in
FIG. 6B, the control portion 40 controls the heater lift mechanism
23 to raise the heater 3 to the third height level HL3, which is
the uppermost level by controlling the heater lift mechanism 23.
When the heater 3 is at the third height level HL3, the spacing W3
between the lower surface of the wafer W held by the spin chuck 2
and the opposing surface 29 of the heater 3 is, for example, 0.5
mm.
[0068] The wafer W held by the spin chuck 2 with the heater 3 at
the third height level HL3 is heated with radiation heat from the
heater 3. After the heater 3 is raised, the first, second and third
opposing surfaces 29A, 29B and 29C are parallel to the lower
surface of the wafer W. Hence, the amount of heat per unit area
given by the heater 3 to a part of the wafer W opposing the third
opposing surface 29C is higher than the amount of heat per unit
area given to a part of the wafer W opposing the second opposing
surface 29B. The amount of heat per unit area given by the heater 3
to the part of the wafer W opposing the second opposing surface 29B
is higher than the amount of heat per unit area given to a part of
the wafer W opposing the first opposing surface 29A. In other
words, the amount of heat per unit area given to the wafer W is set
higher as the opposing surface extends away from the rotation axis
A1. Although variations in temperature of the wafer W are produced
through the heating by the heater 3, the surface temperature of the
wafer W is heated to about 160.degree. C.
[0069] The control portion 40 controls the first nozzle movement
mechanism 18 to move the first chemical liquid nozzle 4 above the
rotation center of the wafer W.
[0070] When the raising of the heater 3 is completed, as shown in
FIG. 6C, the control portion 40 controls the spin motor 14 to start
the rotation of the wafer W (step S2). The wafer W is accelerated
to a predetermined liquid processing speed (for example, 500 to
1000 rpm), and thereafter is maintained at the liquid processing
speed.
[0071] When the movement of the first chemical liquid nozzle 4 is
completed, as shown in FIG. 6C, the control portion 40 opens the
SPM liquid valve 17 to discharge the SPM liquid of, for example,
160.degree. C. from the first chemical liquid nozzle 4. The SPM
liquid discharged from the first chemical liquid nozzle 4 is
supplied to the center portion of the surface of the wafer W being
rotated (step S3: the SPM liquid supplying step). The SPM liquid
supplied to the surface of the wafer W receives a centrifugal force
produced by the rotation of the wafer W, and flows to the
peripheral edge portion on the surface of the wafer W. In this way,
the SPM liquid is spread over the entire surface of the wafer W,
and the resist formed on the surface of the wafer W is peeled by
the strong oxidizing power of peroxomonosulfuric acid contained in
the SPM liquid. The resist is lifted off from the surface of the
wafer W is made to flow away by the SPM liquid and is removed from
the surface of the wafer W. In this way, the reaction between the
resist on the surface of the wafer W and the SPM liquid is
facilitated, and the removal of the resist from the surface of the
wafer W proceeds.
[0072] The SPM liquid supplied to the center portion of the surface
of the wafer W performs heat exchange with the ambient atmosphere
and the like. Hence, in the course of flowing from the center
portion of the surface of the wafer W to the peripheral edge
portion, heat is removed from the wafer W to the SPM liquid. Then,
as a result of the heat exchange between the SPM liquid and the
wafer W, heat may be removed from the peripheral edge portion of
the wafer W. The amount of heat removed from the wafer W is
increased as the surface of the wafer W extends to the peripheral
edge portion of the surface of the wafer W.
[0073] However, in the preferred embodiment, as the wafer W extends
away from the rotation axis A1, a higher amount of heat per unit
area is given to the wafer W. More specifically, here, the amount
of heat generated per unit area of the first, second and third
opposing surfaces 29A, 29B and 29C is set such that the amount of
heat given to the wafer W and the amount of heat removed from the
wafer W are uniform in the individual portions of the wafer W.
Consequently, the surface temperature of the wafer W is distributed
uniformly over the entire area at about 160.degree. C. In this way,
the processing using the SPM liquid can be performed over the
entire surface of the wafer W.
[0074] When a predetermined resist removal time has elapsed since
the start of the discharge of the SPM liquid from the first
chemical liquid nozzle 4, the control portion 40 closes the SPM
liquid valve 17 to return the first chemical liquid nozzle 4 from
the rotation center of the wafer W to the home position. As shown
in FIG. 6D, the control portion 40 controls the heater lift
mechanism 23 to lower the heater 3 to a second height level HL2
that is a height position lower than the third height level HL3.
When the heater 3 is at the second height level HL2, a spacing W2
between the lower surface of the wafer W held by the spin chuck 2
and the opposing surface 29 of the heater 3 is about 10 mm. In this
state, although variations in temperature are produced by the
radiation heat from the heater 3, the wafer W held by the spin
chuck 2 is heated to about 80.degree. C. In other words, the wafer
W whose temperature is about 160.degree. C. is cooled by the
lowering of the heater 3.
[0075] Then, while the rotation speed of the wafer W is being
maintained at the liquid processing speed, as shown in FIG. 6E, the
control portion 40 opens the high-temperature rinse liquid valve 37
to supply the DIW of about 80.degree. C. from the discharge port of
the high-temperature rinse liquid nozzle 35 to around the rotation
center of the wafer W (step S4: an intermediate rinse step). The
DIW supplied to the surface of the wafer W receives the centrifugal
force produced by the rotation of the wafer W, and flows to the
peripheral edge portion on the surface of the wafer W. In this way,
the SPM liquid adhered to the surface of the wafer W is washed
away. Here, since heat from the heater 3 is given via the wafer W
to the DIW flowing on the surface, the DIW is prevented from being
lowered in temperature from about 80.degree. C., and flows to the
peripheral edge portion of the wafer W.
[0076] The wafer W may be damaged if the DIW of room temperature is
suddenly supplied to the wafer W whose temperature has so far been
heated to a high temperature of about 160.degree. C. Hence, the DIW
whose temperature is warmed at about 80.degree. C. is used to
perform rinsing. However, even in this case, it is necessary to
wait for the start of the intermediate rinse step in step S4 until
the wafer W is lowered in temperature to at least about 90.degree.
C.
[0077] However, the heater 3 is not lowered in temperature
immediately after the heater 3 is turned from on to off . Hence,
when the heater 3 is disposed at the third height level HL3, for a
certain time after the heater 3 is turned off, the heater 3
continues to heat the wafer W with a large amount of heat. Hence,
it is necessary to take a considerably long time to sufficiently
lower the temperature of the heater 3, with the result that the
processing time of the entire resist removing processing may be
prolonged.
[0078] On the other hand, in the preferred embodiment, after the
completion of the SPM liquid supplying step in step S3, the spacing
between the heater 3 and the wafer W is increased from the spacing
W3 to the spacing W2, thus reducing the added amount of heat to the
wafer W. In this way, it is possible to cool the wafer W.
Consequently, within a short time after the completion of the SPM
liquid supplying step in step S3, it is possible to start the
intermediate rinse step in step S4.
[0079] When the supply of the DIW is continued over a predetermined
intermediate rinse time, the high-temperature rinse liquid valve 37
is closed, and the supply of the DIW to the surface of the wafer W
is stopped. As shown in FIG. 6F, the control portion 40 controls
the heater lift mechanism 23 t lower the heater 3 to a first height
level HL1 that is a height position lower than the second height
level HL2. When the heater 3 is at the first height level HL1, the
spacing W1 between the lower surface of the wafer W held by the
spin chuck 2 and the opposing surface 29 of the heater 3 is, for
example, 20 mm.
[0080] The wafer W held by the spin chuck 2 with the heater 3 at
the first height level HL1 is heated with the radiation heat from
the heater 3. When the heater 3 is lowered to the first height
level HL1, the first, second and third opposing surfaces 29A, 29B
and 29C are parallel to the lower surface of the wafer W. Hence,
the amount of heat per unit area given by the heater 3 to the part
of the wafer W opposing the third opposing surface 29C is higher
than the amount of heat per unit area given to the part of the
wafer W opposing the second opposing surface 29B. The amount of
heat per unit area given by the heater 3 to the part of the wafer W
opposing the second opposing surface 29B is higher than the amount
of heat per unit area given to the part of the wafer W opposing the
first opposing surface 29A. In other words, the amount of heat per
unit area given to the wafer W is set higher as the opposing
surface extends away from the rotation axis A1. Although variations
in temperature of the wafer W are produced through the heating by
the heater 3, the surface temperature of the wafer W is heated to
about 60.degree. C. In other words, the surface temperature of the
wafer W is lowered from about 80.degree. C. as it is to about
60.degree. C. by the lowering of the heater 3. The control portion
40 controls the second nozzle movement mechanism 21 to move the
second chemical liquid nozzle 5 to a position above the wafer
W.
[0081] After the completion of the movement of the second chemical
liquid nozzle 5, as shown in FIG. 6G, the control portion 40 opens
the SC1 valve 20 to discharge the SC1 of, for example, about
60.degree. C. from the second chemical liquid nozzle 5. Since the
SC1 has a liquid temperature of about 60.degree. C., the processing
capacity of the SC1 is high. The SC1 discharged from the second
chemical liquid nozzle 5 is supplied to the center portion on the
surface of the wafer W being rotated (step S5: a SC1 supplying
step). The SC1 supplied to the surface of the wafer W receives the
centrifugal force produced by the rotation of the wafer W, and
flows to the peripheral edge portion on the surface of the wafer W.
In this way, the SC1 is supplied to the entire surface of the wafer
W uniformly, and it is possible to remove, by the chemical
capability of the SC1, foreign matter such as a resist residue and
particles adhered to the surface of the wafer W.
[0082] The SC1 liquid supplied to the center portion of the surface
of the wafer W performs heat exchange with the ambient atmosphere
and the like. Hence, in the course of flowing from the center
portion on the surface of the wafer W to the peripheral edge
portion, heat is removed from the wafer W to the SC1. Then, as a
result of the heat exchange between the SC1 and the wafer W, heat
may be removed from the peripheral edge portion of the wafer W. The
amount of heat removed from the wafer W is increased as the surface
of the wafer W extends to the peripheral edge portion.
[0083] However, in the preferred embodiment, as the wafer W extends
away from the rotation axis A1, a higher amount of heat per unit
area is given to the wafer W. More specifically, here, the amount
of heat generated per unit area of the first, second and third
opposing surfaces 29A, 29B and 29C is set such that the amount of
heat given to the wafer W and the amount of heat removed from the
wafer W are uniform in the individual portions of the wafer W.
Consequently, the surface temperature of the wafer W is distributed
uniformly over the entire area at about 60.degree. C. In this way,
the processing using the SC1 can be performed over the entire
surface of the wafer W.
[0084] When the supply of the SC1 is continued over a predetermined
SC1 supply time, the control portion 40 closes the SC1 valve 20. As
shown in FIG. 6H, the control portion 40 controls the heater lift
mechanism 23 to lower the heater 3 to the zero height level HL0
that is a height position lower than the first height level HL1.
When the heater 3 is at the zero height level HL0, a spacing W0
between the lower surface of the wafer W held by the spin chuck 2
and the opposing surface 29 of the heater 3 is, for example, 40 mm.
In this state, the spacing between the heater 3 and the wafer W
held by the spin chuck 2 is excessively extended, and thus only a
small amount of radiation heat reaches the wafer W from the heater
3, with the result that the effect on the wafer W is small. In
other words, the wafer W is not heated by the heater 3. Here, the
surface temperature of the wafer W remains a room temperature.
[0085] Then, with the rotation speed of the wafer W maintained at
the liquid processing speed, as shown in FIG. 6I, the control
portion 40 opens the room-temperature rinse liquid valve 32 to
supply the DIW of room temperature from the discharge port of the
room-temperature rinse liquid nozzle 30 to around the rotation
center of the wafer W (step S6: a final rinse step). The DIW
supplied to the surface of the wafer W receives the centrifugal
force produced by the rotation of the wafer W, and flows to the
peripheral edge portion of the wafer W on the surface of the wafer
W. In this way, the SC1 adhered to the surface of the wafer W is
washed away.
[0086] Here, since the surface temperature of the wafer W is a room
temperature, the DIW is prevented from being heated via the wafer
W.
[0087] In the intermediate rinse step of step S4 and the final
rinse step of step S6, instead of the DIW, as the rinse liquid,
carbonated water, electrolytic ion water, ozone water, reduced
water (hydrogen water), magnetic water or the like can be
adopted.
[0088] Then, although the spin drying (step S7), which will be
subsequently described, is performed, as shown in FIG. 6H, before
the spin drying is performed, the control portion 40 controls the
heater lift mechanism 23 to raise the heater 3 from the zero height
level HL0 to the first height level HL1.
[0089] After the heater 3 is disposed at the first height level
HL1, as shown in FIG. 6J, the control portion 40 drives the spin
motor 14 to increase the rotation speed of the wafer W to a
predetermined high rotation speed (for example, 1500 to 2500 rpm),
and swings away the DIW adhered to the wafer W to perform the spin
drying (step S7). By the spin drying, the DIW adhered to the wafer
W is removed.
[0090] Although variations in temperature of the wafer W are
produced by the radiation heat from the heater 3 at the first
height level HL1, the surface temperature of the wafer W is heated
to about 60.degree. C. Hence, the DIW adhered to the wafer W is
more likely to be evaporated, and thus it is possible to reduce the
time necessary for the spin drying.
[0091] When the spin drying is performed for a previously
determined spin drying time, the control portion 40 drives the spin
motor 14 to stop the rotation of the spin chuck 2. The control
portion 40 also turns off the heater 3 (non-driven state) and
controls the heater lift mechanism 23 to lower the heater 3 to the
zero height level HL0. In this way, the resist removing processing
for one wafer W is completed, and the processed wafer W is
transported by the transport robot from the processing chamber 6
(step S8).
[0092] A second processing example of the resist removing
processing performed by the substrate processing apparatus 1 will
then be described. FIG. 7 is a timing chart for illustrating the
second processing example. In the second processing example, as in
the first processing example, the individual steps shown in FIG. 4
are performed. The second processing example differs from the first
processing example in that, in each of the steps, not only the
spacing between the heater 3 and the wafer W but also the output
level of the heater 3 (the outputs of the heater plates 3A, 3B and
3C) is made to differ.
[0093] In the second processing example of FIG. 7, in the SPM
liquid supplying step (see FIG. 4) in step S3, the output level is
set at a third output level PL3 at which the amount of heat
generated per unit area of the heater 3 is the largest.
[0094] In the SPM liquid supplying step, as in the first processing
example, the heater 3 is at the third height level HL3. Although
variations in temperature of the wafer W are produced through the
heating by the heater 3, the surface temperature of the wafer W is
heated to about 160.degree. C.
[0095] In the intermediate rinse step (see FIG. 4) in step S4, the
output level is set at a second output level PL2 at which the
amount of heat generated per unit area of the heater is smaller
than the third output level PL3. In the intermediate rinse step, as
in the first processing example, the heater 3 is at the second
height level HL2. Although variations in temperature of the wafer W
are produced through the heating by the heater 3, the surface
temperature of the wafer W is heated to about 80.degree. C.
[0096] In the SC1 supplying step (see FIG. 4) in step S5, the
output level is set at a first output level PL1 at which the amount
of heat generated per unit area of the heater 3 is smaller than the
second output level PL2. In the SC1 supplying step, as in the first
processing example, the heater 3 is at the first height level HL1.
Although variations in temperature of the wafer W are produced
through the heating by the heater 3, the surface temperature of the
wafer W is heated to about 60.degree. C.
[0097] In the final rinse step (see FIG. 4) in step S6, the output
level is set at a zero output level PL0 at which heat is not
generated by the heater 3. In the final rinse step, as in the first
processing example, the heater 3 is at the zero height level HL0.
In this state, the wafer W is not heated by the heater 3. Hence,
the surface temperature of the wafer W remains a room temperature
(for example, about 25.degree. C., the same temperature as the room
temperature (RT) of the processing chamber 6).
[0098] At the zero output level PL0, the amount of heat from the
heater 3 may be set small such that the radiation heat from the
heater 3 located at the zero height level HL0 little affects the
wafer W.
[0099] As described above, the output level of the heater 3 is
minimized when the wafer W is not heated, and thus while the heater
3 is kept in an on-state, it is possible to stop the heating the
wafer W. When the heater 3 is temporarily turned off, it may be
necessary to take a long time to increase the temperature of the
heater 3 to a high temperature when the wafer W is heated again. On
the other hand, in this case, the heater 3 is not turned off, and
thus thereafter, it is possible to reduce a time necessary to
increase the temperature when the wafer W is heated again.
[0100] It is a matter of course that even when the output level of
the heater 3 is any one of the output levels PL0, PL1, PL2 and PL3,
the amount of heat generated per unit area of the third opposing
surface 29C is set larger than the amount of heat generated per
unit area of the second opposing surface 29B, and the amount of
heat generated per unit area of the second opposing surface 29B is
set larger than the amount of heat generated per unit area of the
first opposing surface 29A.
[0101] Although as indicated by solid lines of FIG. 7, the output
level of the heater 3 can be gradually changed (over a long time),
as indicated by dashed lines of FIG. 7, it may be changed rapidly
(in an extremely short time).
[0102] Furthermore, although as indicated by the solid lines of
FIG. 7, the height position of the heater 3 may be changed
simultaneously when the output level of the heater 3 is changed, as
indicated by the dashed lines of FIG. 7, it may be changed before
the change of the output level of the heater 3.
[0103] FIG. 8 is a plan view schematically showing the arrangement
of a substrate processing apparatus 100 according to a second
preferred embodiment of the present invention. In FIG. 8, portions
corresponding to the portions indicated in the first preferred
embodiment described above are identified with the same symbols as
in FIGS. 1 to 7, and their description will be omitted.
[0104] The substrate processing apparatus 100 differs from the
substrate processing apparatus 1 according to the first preferred
embodiment in that, instead of the heater 3, a heater 103 is
provided. As with the heater 3, the heater 103 has a disk shape
whose diameter is substantially equal to that of the wafer W or is
slightly smaller than that of the wafer W, and has a horizontal
position. The heater 103 includes, instead of the third heater
plate 3C, a heater plate 101 consisting of a plurality of (in FIG.
8, for example, four) divided members 102. Each of the divided
members 102 is arc plate-shaped and has the same elements. A
plurality of (four) divided members 102 are combined, and thus the
annular heater plate 101 is formed. As with the first heater plate
3A, each of the divided members 102 is a resistor-type ceramic
heater in which a resistor is incorporated in a main body made of
ceramic. On the surface of each of the divided members 102, an
opposing region (divided region) 104 opposite the lower surface of
the wafer W held by the spin chuck 2 is formed. A plurality of
opposing regions 104 constitute an opposing surface 129.
[0105] In this case, power is individually supplied to the resistor
of each of the divided members 102, and the amount of power
supplied to each of the resistors is individually controlled.
Hence, it is possible to individually control the amount of heat
generated on the opposing region 104 of each of the divided members
102 (the surface temperature of the divided members 102).
[0106] In the second preferred embodiment, the opposing surface 129
of the heater 103 is divided into a plurality of opposing regions
104 in a circumferential direction, and the temperatures of the
opposing regions 104 are individually adjusted. In this way, even
when as in the heater 103, the opposing surface 129 has a larger
area, it is possible to maintain the opposing surface 129 at a
uniform temperature in the circumferential direction. Hence, it is
possible to maintain the entire area of the opposing surface 129 at
a uniform temperature.
[0107] Incidentally, even when such an arrangement is adopted,
minute variations in temperature may be produced in the individual
portions of the opposing surface 129 in the circumferential
direction. However, in the SPM liquid supplying step (S3), the
intermediate rinse step (S4), the SC1 supplying step (S5) and the
spin drying (S7), in which the wafer W is heated, the wafer W is
rotated with respect to the heater 103, and the opposing regions
104 opposite a predetermined position on the surface of the wafer W
are changed one after another. Hence, the temperatures of the
opposing regions 104 are made roughly uniform, and thus it is
possible to maintain the uniformity of the surface temperature of
the wafer W. Due to the reasons described above, the amounts of
heat generated by the opposing regions 104 (the amounts of heat
given to the wafer W) are not required to be exactly uniform, it is
possible to simplify the temperature control of the opposing
regions 104.
[0108] The arrangement of the heater plate 101 is not limited to
the arrangement in which the heater plate 101 is divided into a
plurality of divided members 102, and it may adopt an arrangement
in which a plurality of resistors are incorporated in one annular
main body and it is possible to individually control the amount of
power supplied to each of the resistors.
[0109] FIG. 9 is a plan view schematically showing the arrangement
of a substrate processing apparatus 200 according to a third
preferred embodiment of the present invention.
[0110] The substrate processing apparatus 200 differs from the
substrate processing apparatus 1 according to the first preferred
embodiment in that, instead of the heater 3, a heater 203 is
provided. As with the heater 3, the heater 203 has a disk shape
whose diameter is substantially equal to that of the wafer W or is
slightly smaller than that of the wafer W, and has a horizontal
position. In the opposing surface 229 of the heater 203, a large
number of honeycomb-shaped heater portions 201 are formed in which
the opposing surface 229 is divided into the radial direction and
the circumferential direction. Each of the heater portions 201 has
the same elements. In each of the heater portions 201, a resistor
is disposed. Power is individually supplied to the resistors of the
heater portions 201, and the amount of power supplied to the
resistors is individually controlled. Hence, it is possible to
individually control the amount of heat generated by the heater
portions 201 (the surface temperature of the heater portions
201).
[0111] In the third preferred embodiment, the opposing surface 229
of the heater 203 is divided into a plurality of heater portions
201 both in the circumferential direction and in the radial
direction, and the heater portions 201 are individually adjusted in
temperature. In the third preferred embodiment, the temperature of
the plurality of heater portions 201 (the amount of heat generated
per unit area) is set such that as the opposing surface extends
away from the rotation axis A1, it is increased. In other words, as
in the first preferred embodiment, in the opposing surface 229, a
temperature distribution is formed in which as the opposing surface
extends away from the rotation axis A1, the temperature is
increased. Hence, the temperature of the processing liquid (the SPM
liquid, the SC1 or the like) flowing on the surface of the wafer W
can be made uniform over the entire area of the wafer W, and the
uniform processing using the processing liquid can be performed
over the entire surface of the wafer W.
[0112] The temperature of the plurality of heater portions 201 (the
amount of heat generated per unit area) is set at a uniform
temperature in the circumferential direction. Since the individual
portions of the opposing surface 229 are individually controlled to
have the uniform temperature in the circumferential direction, even
when as in the heater 203, the opposing surface 229 has a larger
area, it is possible to maintain the opposing surface 229 at the
uniform temperature in the circumferential direction.
[0113] Incidentally, even when such an arrangement is adopted,
minute variations in temperature may be produced in the individual
portions of the opposing surface 229. However, in the SPM liquid
supplying step (S3), the intermediate rinse step (S4), the SC1
supplying step (S5) and the spin drying (S7), in which the wafer W
is heated, the wafer W is rotated with respect to the heater 203,
and the heater portions 201 opposing a predetermined position on
the surface of the wafer W are changed one after another. Hence,
the temperatures of the heater portions 201 are made roughly
uniform, and thus it is possible to maintain the uniformity of the
surface temperature of the wafer W. Due to the reasons described
above, the amounts of heat generated by the heater portions 201
(the amounts of heat given to the wafer W) are not required to be
exactly uniform, it is possible to simplify the temperature control
of the heater portions 201.
[0114] The substrate holding means is not limited to the
arrangement in which the spin base such as the spin base is
included.
[0115] FIG. 10 is a cross-sectional view schematically showing the
arrangement of a substrate processing apparatus 300 according to a
fourth preferred embodiment of the present invention.
[0116] The substrate processing apparatus 300 mainly differs from
the substrate processing apparatus 1 according to the first
preferred embodiment in that, as the substrate holding means, a
spin chuck (substrate holding means) 301 not including the spin
base is included. The substrate processing apparatus 300
significantly differs from the substrate processing apparatus 1 in
that the spin chuck 301 is housed in a sealed chamber 302 having a
hermetically sealed internal space.
[0117] The spin chuck 301 includes an annular-plate-shaped motor
rotor (substrate rotating means) 303 that is rotatably provided
with the vertically extending rotation axis A1 as the rotation
center, a plurality of (for example, six) clamping members 304 that
are disposed on the upper surface of the motor rotor 303 and an
annular motor stator 305 (substrate rotating means) that is
disposed outside the sealed chamber 302 so as to surround the side
of the motor rotor 303. The motor stator 305 is annular with the
rotation axis A1 as the rotation center, and the inner
circumference of the motor stator 305 is disposed with a minute
spacing apart from the outer circumference of the motor rotor
303.
[0118] The motor rotor 303 includes a back yoke 316 and a magnet
317. The back yoke 316 is a magnetic component that prevents the
leakage of magnetic flux to maximize the magnetic force of the
magnet 317. The back yoke 316 is annular and has a predetermined
thickness in the axial direction. A plurality of magnets 317 are
provided and are attached such that they are aligned in the
circumferential direction on the outer circumferential surface of
the back yoke 316.
[0119] The motor stator 305 is arranged with an unillustrated coil
or the like, clamps a cup 306, which will be subsequently described
and surrounds the motor rotor 303.
[0120] The spin chuck 301 brings the clamping members 304 into
contact with the peripheral edge surface of the wafer W, and
thereby can hold the wafer W by sandwiching it from the
circumference. Then, with the wafer W held by the plurality of
clamping members 304, power is supplied from an unillustrated power
supply to the motor rotor 303 and the motor stator 305, and thus
the wafer W is rotated together with the motor rotor 303 around the
vertical rotation axis A1 passing through the center of the wafer
W.
[0121] The sealed chamber 302 is arranged by combining the
bottomed-cylindrical cup 306 in which the spin chuck 301 is housed
and a lid member 308 which blocks the upper portion opening 307 of
the cup 306. In the cup 306, the motor rotor 303 and the clamping
members 304 of the spin chuck 301 are disposed to be housed, and in
particular, the motor rotor 303 is disposed in a position close
both to the bottom wall of the cup 306 and to the outer
circumferential wall of the cup 306.
[0122] The lid member 308 is bottomed-cylindrical with an opening
facing downward. In the lid member 308, a processing liquid nozzle
(processing liquid supplying means) 309 is inserted through a
position on the rotation axis A1 of the wafer
[0123] W. The processing liquid including the SPM liquid, the
high-temperature DIW, the SC1 and the DIW described above is
supplied to the processing liquid nozzle 309, and the processing
liquid is discharged from a discharge port formed in the lower end
of the processing liquid nozzle 309.
[0124] In the lower end of the outer circumferential wall of the
lid member 308, a sealing ring 310 is provided over the entire
circumference. When the lid member 308 is at the closed position,
the lower end of the outer circumferential wall of the lid member
308 and the upper end of the outer circumferential wall of the cup
306 are brought into contact through the sealing ring 310, and thus
the interior of the sealed chamber 302 arranged with the lid member
308 and the cup 306 is kept a hermetically sealed space.
[0125] The substrate processing apparatus 300 includes a heater 311
that is disposed opposite the lower surface of the wafer W held by
the spin chuck 301 and that heats the wafer W from below, a heater
stage 313 that supports the heater 311 from below and a heater lift
mechanism (moving means) 312 that raises and lowers the heater 311
while maintaining the horizontal position. The heater 311 is
disposed in a region inside the motor rotor 303 in plan view, and
has the same arrangement as the heater 3 of the first preferred
embodiment. The heater lift mechanism 312 is arranged with, for
example, a ball screw and a motor. The heater lift mechanism 312 is
coupled to the heater stage 313 and raises and lowers the heater
311 together with the heater stage 313.
[0126] In the substrate processing apparatus 300, for example,
various types of processing such as the first processing example
and the second processing example described above are performed. In
this case, as in the first preferred embodiment, by the drive of
the heater lift mechanism 312, the heater 311 is raised and lowered
between the zero height position (leaving position, see FIG. 6A and
the like) HL0 and the third height position (close position, see
FIG. 6B and the like) HL3. Specifically, the height position of the
heater 311 is switched between the zero height level HL0, the first
height level HL1 (see FIG. 6F and the like), the second height
level HL2 (see FIG. 6D and the like) and the third height level
HL3. In other words, the spacing between the heater 311 and the
wafer W can be changed.
[0127] In the fourth preferred embodiment, when the spacing between
the heater 311 and the wafer W is narrow, the wafer W is heated by
the heater 311 to a high temperature. Then, in this state, the
spacing between the heater 311 and the wafer W is increased, and
thus it is possible to reduce the amount of heat given to the wafer
W, with the result that it is possible to cool the wafer W. It is
also possible to achieve the same action effects as described in
the first preferred embodiment.
[0128] Although the four preferred embodiments of the present
invention have been described above, the present invention can also
be practiced with other preferred embodiments.
[0129] For example, the fourth preferred embodiment can be combined
with the second preferred embodiment or the third preferred
embodiment. In other words, instead of the heater 311 in the fourth
preferred embodiment, it is possible to adopt the heater 103 in the
second preferred embodiment or the heater 203 in the third
preferred embodiment.
[0130] Although in the first and second preferred embodiments, it
has been described that the heater 3 or 103 is arranged with a
plurality of plate heaters 3A, 3B, 3C and 101, the arrangement of a
heater may be adopted in which a plurality of resistors are
incorporated into a disk-shaped main body and the amount of power
supplied to the resistors can be individually controlled.
[0131] Although in the second preferred embodiment, the arrangement
in which the third opposing surface 29C is divided has been
described as an example, the first opposing surface 29A or the
second opposing surface 29B may be divided.
[0132] As indicated by a dashed line in FIG. 1, a temperature
sensor 300 is incorporated into the heater 3, 103, 203 or 311, and
when a temperature detected by the temperature sensor 300 is
lowered to a previously determined temperature, the subsequent
processing (for example, the intermediate rinse processing in step
S6) may be performed.
[0133] Although as the heaters 3, 103, 203 and 311, the
resistor-type ceramic heater has been described as an example, an
infrared heater such as a halogen lamp can be adopted as the
heater.
[0134] Although the case where in order to change the spacing
between the heater 3, 103, 203 or 311 and the wafer W, the heater 3
is raised and lowered has been described as an example, the spin
chuck 2 may be raised and lowered. Both the heater 3 and the spin
chuck 2 may be raised and lowered.
[0135] In the SPM liquid supplying step in step S3 in the first and
second processing examples, the first chemical liquid nozzle 4 is
made to reciprocate between the rotation center of the wafer W and
the peripheral edge portion, and thus a supply position on the
surface of the wafer W to which the SPM liquid is guided from the
first chemical liquid nozzle 4 may reciprocate within a range from
the rotation center of the wafer W to the peripheral edge portion
of the wafer W while drawing an arc-shaped trail intersecting the
direction of the rotation of the wafer W. In this case, the SPM
liquid can be supplied more uniformly over the entire surface of
the wafer W.
[0136] In the SC1 supplying step of step S5 in the first and second
processing examples, the second chemical liquid nozzle 5 is made to
reciprocate between the rotation center of the wafer W and the
peripheral edge portion, and thus a supply position on the surface
of the wafer W to which the SC1 is guided from the second chemical
liquid nozzle 5 may reciprocate within the range from the rotation
center of the wafer W to the peripheral edge portion of the wafer W
while drawing an arc-shaped trail intersecting the direction of the
rotation of the wafer W. In this case, the SC1 can be supplied more
uniformly over the entire surface of the wafer W.
[0137] Although in the preferred embodiments described above, the
case where a scan nozzle is adopted as the first and second
chemical liquid nozzles 4 and 5 has been described as an example,
the first and second chemical liquid nozzles 4 and 5 may be a fixed
nozzle. In this case, the first and second chemical liquid nozzles
4 and 5 are fixed and disposed above the spin chuck 2 with the
discharge port thereof facing the center portion on the upper
surface of the wafer W held by the spin chuck 2.
[0138] Although in the preferred embodiments described above, the
case where the substrate processing apparatus 1, 100, 200 or 300 is
used to perform the resist removing processing on the wafer W has
been described as an example, the invention can be applied to a
substrate processing apparatus used on other processing. In this
case, as the chemical liquid used in the processing, a chemical
liquid corresponding to the details of processing on the surface of
the wafer W is used. For example, when cleaning processing that
removes particles from the surface of the wafer W is performed, the
SC1 (ammonia-hydrogen peroxide mixture) or the like is used.
Moreover, when cleaning processing that etches an oxide film or the
like from the surface of the wafer W is performed, hydrofluoric
acid, BHF (Buffered HF) or the like is used, and when polymer
removing processing is performed that removes a resist residue
which is left as a polymer on the surface of the wafer W after
peeling the resist, a polymer removing liquid such as the SC1 is
used. For cleaning processing that removes a metal contaminant,
hydrofluoric acid, SC2 (hydrochloric acid/hydrogen peroxide
mixture), the SPM liquid (sulfuric acid/hydrogen peroxide mixture)
or the like is used.
[0139] Although in this case, the case where the DIW is used as the
rinse liquid has been described as an example, the rinse liquid is
not limited to the DIW, and as the rinse liquid, carbonated water,
electrolytic ion water, ozone water, hydrochloric acid water of
dilution concentration (for example, about 10 to 100 ppm), reduced
water (hydrogen water) or the like can be adopted.
[0140] Although the preferred embodiments of the present invention
have been described in detail, these are simply specific examples
used to clarify the technical details of the present invention, the
present invention should not be interpreted as these specific
examples alone and the scope of the present invention is limited by
only the scope of claims accompanied.
[0141] This application corresponds to Japanese Patent Application
No. 2012-229139 filed in Japan Patent Office on Oct. 16, 2012, and
all the disclosure of this application is incorporated herein by
reference.
REFERENCE SIGNS LIST
[0142] 1, 100, 200, 300 substrate processing apparatus [0143] 2,
301 spin chuck [0144] 3, 103, 203, 311 heater [0145] 4 first
chemical liquid nozzle [0146] 5 second chemical liquid nozzle
[0147] 12 spin base [0148] 13 clamping member [0149] 14 spin motor
[0150] 23 heater lift mechanism [0151] 25 support rod [0152] 29,
129, 229 opposing surface [0153] 29A first opposing surface [0154]
29B second opposing surface [0155] 29C third opposing surface
[0156] 30 room-temperature rinse liquid nozzle [0157] 35
high-temperature rinse liquid nozzle [0158] 39 space [0159] 104
opposing region (divided region) [0160] 303 motor rotor [0161] 305
motor stator [0162] 309 processing liquid nozzle [0163] 312 heater
lift mechanism [0164] 313 heater stage [0165] A1 rotation axis W
wafer
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