U.S. patent application number 14/714564 was filed with the patent office on 2015-09-03 for light-emitting device.
The applicant listed for this patent is Epistar Corporation. Invention is credited to Chao-Hsing CHEN.
Application Number | 20150249192 14/714564 |
Document ID | / |
Family ID | 49756264 |
Filed Date | 2015-09-03 |
United States Patent
Application |
20150249192 |
Kind Code |
A1 |
CHEN; Chao-Hsing |
September 3, 2015 |
LIGHT-EMITTING DEVICE
Abstract
A method of manufacturing a light-emitting device includes
forming a first optical element on a first carrier, wherein the
first optical element comprises an opening; forming a
light-emitting element in the opening; forming a second carrier on
the first optical element; removing the first carrier after forming
the second carrier on the first optical element; and forming a
conductive structure under the first optical element.
Inventors: |
CHEN; Chao-Hsing; (Tainan,
TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Epistar Corporation |
Hsinchu |
|
TW |
|
|
Family ID: |
49756264 |
Appl. No.: |
14/714564 |
Filed: |
May 18, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13527139 |
Jun 19, 2012 |
9034672 |
|
|
14714564 |
|
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Current U.S.
Class: |
257/98 |
Current CPC
Class: |
H01L 2224/48091
20130101; H01L 33/501 20130101; H01L 2933/0066 20130101; H01L
33/486 20130101; H01L 33/507 20130101; H01L 33/483 20130101; H01L
2924/12044 20130101; H01L 2224/48091 20130101; H01L 33/58 20130101;
H01L 33/60 20130101; H01L 33/505 20130101; H01L 33/56 20130101;
H01L 2933/0058 20130101; H01L 33/48 20130101; H01L 2224/73265
20130101; H01L 33/52 20130101; H01L 2924/00014 20130101; H01L 33/62
20130101; H01L 2924/00 20130101; H01L 2924/12044 20130101; H01L
33/54 20130101 |
International
Class: |
H01L 33/48 20060101
H01L033/48; H01L 33/62 20060101 H01L033/62; H01L 33/60 20060101
H01L033/60; H01L 33/58 20060101 H01L033/58; H01L 33/50 20060101
H01L033/50; H01L 33/52 20060101 H01L033/52 |
Claims
1. A light-emitting device, comprising: a first optical element
comprises an opening; a light-emitting element in the opening; a
second optical element on the light-emitting element; an oxide
layer between the light-emitting element and the second optical
element; and two separated conductive structures under the
light-emitting element.
2. The light-emitting device of claim 1, wherein the oxide layer
comprises a wavelength-converting material.
3. The light-emitting device of claim 1, wherein one of the
separated conductive structures comprises a portion not covered by
the light-emitting element.
4. The light-emitting device of claim 1, further comprising an
insulating-diffusing layer between the light-emitting element and
one of the two separated conductive structures.
5. The light-emitting device of claim 1, wherein the oxide layer is
formed conformably around a contour of the light-emitting
element.
6. The light-emitting device of claim 1, wherein the first optical
element has an inclined surface.
7. The light-emitting device of claim 1, wherein the first optical
element has a height larger than that of the light-emitting
element.
8. The light-emitting device of claim 1, wherein the second optical
element comprises a transparent material.
9. The light-emitting device of claim 1, further comprising an
encapsulant formed between the light-emitting element and the
second optical element.
10. A light-emitting device, comprising: a light-emitting element;
a first optical element on the light-emitting element; an oxide
layer formed on the light-emitting element; an encapsulant formed
between the light-emitting element and the first optical element;
and two separated conductive structures under the light-emitting
element and comprise a part not covered by the light-emitting
element.
11. The light-emitting device of claim 10, further comprising a
carrier on the first optical layer.
12. A light-emitting device, comprising: a first optical element
comprising an opening; a light-emitting element formed in the
opening; a second optical element on the light-emitting element; a
carrier on the second optical element; [FIG. 2C] a
wavelength-converting layer formed on the light-emitting element;
and two separated conductive structures under the light-emitting
element and comprise a part not covered by the light-emitting
element.
Description
REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation application of U.S.
patent application Ser. No. 13/527,139, filed Jun. 19, 2012, now
pending, the entirety of which is hereby incorporated by
reference.
BACKGROUND
[0002] 1. Technical Field
[0003] The present disclosure relates to a light-emitting device,
and more particularly, to a light-emitting device having multiple
optical elements.
[0004] 2. Description of the Related Art
[0005] An optoelectronic device, such as a light-emitting diode
(LED) package, has been applied widely to optical display devices,
traffic signals, data storing devices, communication devices,
illumination devices, and medical apparatuses. The LED can be
connected with other elements to form a light-emitting device. FIG.
1 illustrates a schematic view of a conventional light-emitting
device. A conventional light-emitting device 1 includes a submount
12 with a circuit 14; a solder 16 on the submount 12, wherein an
LED 11 is adhesively fixed on the submount 12 by the solder 16; and
an electrical-connecting structure 18 electrically connecting the
n-type electrode 15 with the circuit 14. The submount 12 can be a
lead frame or a mounting substrate for circuit design and heat
dissipation of the light-emitting apparatus 1. However, because of
the trend of small and slim commercial electronic product, the
development of the optoelectronic device also enters an era of
miniature package. One promising packaging design for semiconductor
and optoelectronic device is the Chip-Level Package (CLP).
SUMMARY OF THE DISCLOSURE
[0006] A method of manufacturing a light-emitting device includes
forming a first optical element on a first carrier, wherein the
first optical element comprises an opening; forming a
light-emitting element in the opening; forming a second carrier on
the first optical element; removing the first carrier after forming
the second carrier on the first optical element; and forming a
conductive structure under the first optical element.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] The accompanying drawings are included to provide easy
understanding of the application, are incorporated herein and
constitute a part of this specification. The drawings illustrate
embodiments of the application and, together with the description,
serve to illustrate the principles of the application.
[0008] FIG. 1 illustrates a cross-sectional view of a conventional
light-emitting device.
[0009] FIGS. 2A-2D illustrate a flow chart of the manufacturing
process of a light-emitting device in accordance with an embodiment
of the present application.
[0010] FIG. 3 illustrates a cross-sectional view of a
light-emitting device in accordance with another embodiment of the
present application.
[0011] FIG. 4 illustrates a cross-sectional view of a
light-emitting device in accordance with another embodiment of the
present application.
[0012] FIG. 5 illustrates a cross-sectional view of a
light-emitting device in accordance with another embodiment of the
present application.
[0013] FIG. 6 illustrates a schematic diagram of a light-generating
device in accordance with an embodiment of the present
application.
[0014] FIG. 7 illustrates a schematic diagram of a back light
module in accordance with an embodiment of the present
application.
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0015] To better and concisely explain the disclosure, the same
name or the same reference number given or appeared in different
paragraphs or figures along the specification should has the same
or equivalent meanings while it is once defined anywhere of the
disclosure.
[0016] The following shows the description of the embodiments of
the present disclosure in accordance with the drawings.
[0017] FIGS. 2A-2D illustrate a flow chart of the manufacturing
process of a light-emitting device 2 in accordance with an
embodiment of the present disclosure. Referring to FIG. 2A, a first
optical element 22 is formed on a first carrier 20 and includes an
opening 222 to expose the first carrier 20. A light-emitting
element 24 is formed on the exposed portion of the first carrier 20
and a wavelength-converting layer 26 is formed on the
light-emitting element 24, as shown in FIG. 2B. In another
embodiment, an electronic component (not shown) can be formed on
the first carrier 20 as well. Referring to FIG. 2C, a second
optical element 28 is formed on the wavelength-converting layer 26.
A bonding layer 21 is formed under a second carrier 23, and/or on
the first optical element 22 and the second optical element 28. The
second carrier 23 is bonded to the second optical element 28
through a bonding process. The first carrier 20 is removed. A
conductive structure 25 is formed under the first optical element
22 and the light-emitting element 24 to form the light-emitting
device 2, wherein the conductive structure 25 is electrically
connected with the light-emitting element 24.
[0018] The first carrier 20 and/or the second carrier 23 support
the first optical element 22, the second optical element 28, and
the light-emitting element 24. The material of the first carrier 20
and/or the second carrier 23 includes conductive material such as
Diamond Like Carbon (DLC), Metal Matrix Composite (MMC), Ceramic
Matrix Composite (CMC), Polymer Matrix Composite (PMC), Cu, Al, Si,
Mo, Cu--Sn, Cu--Zn, Cu--Cd, Ni--Sn, Ni--Co, Au alloy, SiC, GaP,
GaAsP, InP, LiGaO.sub.2, or LiAlO.sub.2, or insulating material
such as diamond, glass, polymer, epoxy, quartz, acryl,
Al.sub.2O.sub.3, ZnO, or MN.
[0019] The first optical element 22 and/or the second optical
element 28 can guide and/or extract light emitted from the
light-emitting element 24 to the environment for improving the
light extraction efficiency of the light-emitting device 2. The
material of the first optical element 22 and/or the second optical
element 28 can be transparent material such as epoxy, polyimide
(PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), Sub,
acrylic resin, polymethyl methacrylate (PMMA), polyethylene
terephthalate (PET), polycarbonate (PC), polyetherimide,
fluorocarbon polymer, glass, Al.sub.2O.sub.3, SINR, spin-on-glass
(SOG), or the combination thereof. In another embodiment, the first
optical element 22 can be reflector including metal such as Cu, Al,
Sn, Au, Ag, Ti, Ni, Ag--Ti, Ni--Sn, Au alloy, Ni--Ag, Ti--Al, or
the combination thereof. In another embodiment, a reflective layer
can be formed on the surfaces of the first topical element 22 to
reflect the light from the light-emitting element 24. The material
of the reflective layer can be the same as the aforementioned
metal. The light from the light-emitting element 24 can be
reflected by the first optical element 22 for improving the light
extraction efficiency of the light-emitting device 2. The shape of
the second optical element 28 includes but is not limited to
triangle, semicircle, quarter circle, trapezoid, pentagon, or
rectangle in the cross-sectional view. An encapsulant can be formed
between the second optical element 28 and the light-emitting
element 24 in another embodiment to improve the light extraction
efficiency of the light-emitting device 2.
[0020] The light-emitting element 24 can be LED or Organic LED
(OLED) and emit a first light with a first wavelength. The
wavelength-converting layer 26 can receive the first light and
generate a second light with a second wavelength, wherein the
second wavelength is different from the first wavelength. The
material of the wavelength-converting layer 26 can be phosphor such
as yttrium aluminum garnet, silicate garnet, vanadate garnet, mixed
oxides, alkaline earth metal silicates, alkaline earth metal
sulfides, selenides, alkaline earth metal thiogallates, metal
nitrides, metal oxo-nitrides and mixed molybdate-tungstate
families, or mixed glass phosphors. The material of the
wavelength-converting layer 26 can be semiconductor including more
than one element selected from a group consisting of Ga, Al, In,
As, P, N, Zn, Cd, and Se as well. The wavelength-converting layer
26 can be disposed on the light-emitting element 24 or be formed
conformably around the contour thereof.
[0021] The bonding layer 21 can adhesively connect the first
optical element 22 and/or the second optical element 28 with the
second carrier 23. The material of the bonding layer 21 can be
transparent material such as polyimide, BCB, PFCB, MgO, Sub, epoxy,
acrylic resin, COC, PMMA, PET, PC, polyetherimide, fluorocarbon
polymer, glass, Al.sub.2O.sub.3, SiO.sub.x, TiO.sub.2, SiN.sub.x,
SOG, and so on. The bonding layer 21 can be UV tape or foam as
well.
[0022] The conductive structure 25 is for receiving external
voltage. The materials of the conductive structure 25 can be
transparent conductive material and/or metal material. The
transparent conductive material includes but is not limited to ITO,
InO, SnO, CTO, ATO, AZO, ZTO, ZnO, IZO, DLC, GZO, and so on. The
metal material includes but is not limited to Cu, Al, In, Sn, Au,
Pt, Zn, Ag, Ti, Ni, Pb, Pd, Ge, Ni, Cr, Cd, Co, Mn, Sb, Bi, Ga, W,
Be, Ag--Ti, Cu--Sn, Cu--Zn, Cu--Cd, Sn--Pb--Sb, Sn--Pb--Zn, Ni--Sn,
Ni--Co, Ag--Cu, Ge--Au, Au alloy, and so on. The area of the bottom
surface of the conductive structure 25 is larger than that of the
light-emitting element 24. It can be at least 2 times area of the
bottom surface of the light-emitting element 24. The conductive
structure 25 can effectively release the heat from the
light-emitting element 24 for improving the efficiency thereof. In
addition, there is an insulating-diffusing layer (not shown) formed
between the light-emitting element 24 and the conductive structure
25 in another embodiment. The insulating-diffusing layer can
reflect and diffuse the light from the light-emitting element 24 to
improve the light extraction efficiency of the light-emitting
device 2. The material of the insulating-diffusing layer includes
but is not limited to epoxy, SiO.sub.x, Al.sub.2O.sub.3, TiO.sub.2,
silicone, resin, or the combination thereof. In another embodiment,
a reflective layer can be formed between the light-emitting element
24 and the conductive structure 25 to reflect the light from the
light-emitting element 24. The material of the reflective layer can
be the same as the aforementioned metal. The light from the
light-emitting element 24 can be reflected by the reflective layer
for improving the light extraction efficiency of the light-emitting
device 2.
[0023] FIG. 3 shows another embodiment that a light-emitting device
3 is similar to the light-emitting device 2. In addition, the
light-emitting device 3 includes a second optical element 30 which
has a top surface at the same elevation as that of the first
optical element 22 in a cross-sectional view. The top surface of
the second optical element 30 is flat so it benefits the bonding
process and reinforcing the structure of the light-emitting device
2. FIG. 4 shows another embodiment that a light-emitting device 4
is similar to the light-emitting device 2. In addition, the
light-emitting device 4 includes a second optical element 40 which
has a top surface lower than that of the first optical element 22.
Therefore, other optical elements can be formed easily on the
second optical element 40 to tune the optical field for the
application.
[0024] Referring to FIG. 5, a light-emitting device 5 is similar to
the light-emitting device 2. In addition, the light-emitting device
5 includes an electronic component 50 such as rectifier, protection
component, capacity, resistance, and so on. The electronic
component 50 having various functions can control the current of
the light-emitting element 24 based of the requirement of the
application. It can be formed within the step of forming the
light-emitting element 24 of the above manufacturing process.
Preferably, the amount of the electronic component 50 and the
light-emitting element 24 can be more than two, so the steps of the
manufacturing process are reduced and the cost of the manufacturing
is lowered. The electronic component 50 and the light-emitting
element 24 can be electrically connected by the conductive
structure 25. The light-emitting device 5 further includes a
wavelength-converting layer 52 on the second optical element
28.
[0025] FIG. 6 illustrates a schematic diagram of a light-generating
device 6. The light-generating device 6 includes the light-emitting
device of anyone of the foregoing embodiments of the present
application. The light-generating device 6 can be an illumination
device such as a street light, a lamp of vehicle, or an
illustration source for interior. The light-generating device 6 can
be also a traffic sign or a backlight of a backlight module of an
LCD. The light-generating device 6 includes a light source 61
adopting any foregoing light-emitting devices; a power supplying
system 62 providing current to the light source 61; and a control
element 63 controlling the power supplying system 62.
[0026] FIG. 7 illustrates a schematic diagram of a backlight module
7. A backlight module 7 includes the light-generating device 6 of
the foregoing embodiment and an optical element 71. The optical
element 71 can process the light generated by the light-generating
device 6 for LCD application, such as scattering the light emitted
from the light-generating device 6.
[0027] It will be apparent to those having ordinary skill in the
art that various modifications and variations can be made to the
devices in accordance with the present disclosure without departing
from the scope or spirit of the disclosure. In view of the
foregoing, it is intended that the present disclosure covers
modifications and variations of this disclosure provided they fall
within the scope of the following claims and their equivalents.
* * * * *