U.S. patent application number 14/516548 was filed with the patent office on 2015-08-27 for method of manufacturing light emitting diode package.
The applicant listed for this patent is SAMSUNG ELECTRONICS CO., LTD.. Invention is credited to Nam Goo CHA, Kyoung Jun KIM, Yong Min KWON.
Application Number | 20150243853 14/516548 |
Document ID | / |
Family ID | 53883060 |
Filed Date | 2015-08-27 |
United States Patent
Application |
20150243853 |
Kind Code |
A1 |
CHA; Nam Goo ; et
al. |
August 27, 2015 |
METHOD OF MANUFACTURING LIGHT EMITTING DIODE PACKAGE
Abstract
A method of manufacturing a light emitting diode (LED) package
may include forming a light emitting structure having a first
conductivity-type semiconductor layer, an active layer and a second
conductivity-type semiconductor layer on a growth substrate,
forming first and second electrodes connected to the first and
second conductivity-type semiconductor layers, respectively,
bonding a first surface of a light transmissive substrate opposite
to a second surface thereof to the light emitting structure,
identifying positions of the first and second electrodes that are
seen through the second surface of the light transmissive
substrate, forming one or more through holes in the light
transmissive substrate to correspond to the first and second
electrodes, and forming first and second via electrodes by filling
the through holes with a conductive material.
Inventors: |
CHA; Nam Goo; (Ansan-Si,
KR) ; KWON; Yong Min; (Seoul, KR) ; KIM;
Kyoung Jun; (Yongin-Si, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SAMSUNG ELECTRONICS CO., LTD. |
Suwon-Si |
|
KR |
|
|
Family ID: |
53883060 |
Appl. No.: |
14/516548 |
Filed: |
October 16, 2014 |
Current U.S.
Class: |
438/27 ;
438/26 |
Current CPC
Class: |
H01L 33/0095 20130101;
H01L 33/62 20130101; H01L 2933/0066 20130101; H01L 2933/0033
20130101; H01L 33/16 20130101; H01L 33/486 20130101; H01L 33/0093
20200501; H01L 2224/16225 20130101; H01L 2224/94 20130101 |
International
Class: |
H01L 33/48 20060101
H01L033/48; H01L 33/62 20060101 H01L033/62 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 21, 2014 |
KR |
10-2014-0020167 |
Claims
1. A method of manufacturing a light emitting diode (LED) package,
comprising: providing a light transmissive substrate; forming a
light emitting structure including a first conductivity-type
semiconductor layer, an active layer and a second conductivity-type
semiconductor layer; forming a first electrode connected to the
first conductivity-type semiconductor layer; forming a second
electrode connected to the second conductivity-type semiconductor
layer; mounting the light emitting structure on the light
transmissive substrate by bonding a first surface of the light
transmissive substrate to the light emitting structure; identifying
positions of the first and second electrodes through a second
surface of the light transmissive substrate, the second surface of
the light transmissive substrate being an opposite surface of the
first surface of the light transmissive substrate; forming a
plurality of through holes in the light transmissive substrate, the
plurality of through holes including a first through hole
corresponding to the first electrode and a second through hole
corresponding to the second electrode; forming a first via
electrode by filling the first through hole with a conductive
material; and forming a second via electrode by filling the second
through hole with the conductive material.
2. The method of claim 1, wherein the light transmissive substrate
is formed of an insulating material.
3. The method of claim 2, wherein the insulating material includes
SiO.sub.2.
4. The method of claim 1, further comprising polishing the second
surface of the light transmissive substrate through a chemical and
mechanical polishing process after bonding the first surface of the
light transmissive substrate to the light emitting structure.
5. The method of claim 1, wherein bonding the first surface of the
light transmissive substrate to the light emitting structure is
performed by applying a light transmissive adhesive to a first
surface of the light emitting structure and bonding the first
surface of the light transmissive substrate to the light
transmissive adhesive.
6. The method of claim 5, wherein the light transmissive adhesive
includes water glass or silicone.
7. The method of claim 1, wherein the light transmissive substrate
is bonded to the light emitting structure at a temperature of
approximately 400.degree. C. or below.
8. The method of claim 1, wherein bonding the first surface of the
light transmissive substrate to the light emitting structure is
performed through anodic bonding.
9. The method of claim 1, wherein bonding the first surface of the
light transmissive substrate to the light emitting structure is
performed through fusion bonding.
10. The method of claim 1, wherein the light transmissive substrate
is formed to have a thickness of approximately 10 .mu.m to 500
.mu.m.
11. The method of claim 1, wherein the light emitting structure is
formed of GaN.
12. The method of claim 1, further comprising forming a wavelength
conversion layer on a second surface of the light emitting
structure.
13. The method of claim 12, further comprising forming an
encapsulation body to enclose the light emitting structure and the
wavelength conversion layer.
14. A method of manufacturing a light emitting diode (LED) package,
comprising: providing a light transmissive substrate; forming a
light emitting structure including a first conductivity-type
semiconductor layer, an active layer and a second conductivity-type
semiconductor layer on a growth substrate; forming a first
electrode connected to the first conductivity-type semiconductor
layer; forming a second electrode connected to the second
conductivity-type semiconductor layer; disposing a first alignment
key on a first surface of the light emitting structure; forming a
first via electrode and a second via electrode by penetrating
through the light transmissive substrate, the first via electrode
corresponding to the first electrode, the second via electrode
corresponding to the second electrode; disposing a second alignment
key on a first surface of the light transmissive substrate; and
mounting the light emitting structure on the light transmissive
substrate by bonding the first surface of the light transmissive
substrate to the first surface of the light emitting structure,
wherein the light transmissive substrate is arranged to allow the
second alignment key to correspond to the first alignment key, and
the light emitting structure is seen through a second surface of
the light transmissive substrate, the second surface of the light
transmissive substrate being opposite to the first surface of the
light transmissive substrate.
15. The method of claim 14, further comprising removing the growth
substrate.
16. The method of claim 14, further comprising determining
positions of the light transmissive substrate and the light
emitting structure by capturing images of the first alignment key
and the second alignment key.
17. The method of claim 14, wherein the light transmissive
substrate is transparent.
18. The method of claim 14, wherein the forming the light emitting
structure on the growth substrate includes sequentially stacking
the first conductivity-type semiconductor layer, the active layer
and the second conductivity-type semiconductor layer.
19. A method of forming a light emitting diode (LED) package,
comprising: providing a transparent light transmissive substrate
having a first surface and a second surface, the first surface of
the light transmissive substrate being opposite to the second
surface of the light transmissive substrate; forming a light
emitting structure having a first surface and a second surface, the
first surface of the light emitting structure being opposite to the
second surface of the light emitting structure; aligning a position
of the light emitting structure relative to a position of the light
transmissive substrate by identifying the light emitting structure
seen through the light transmissive substrate; and mounting the
light emitting structure on the light transmissive substrate by
bonding the first surface of the light transmissive substrate to
the first surface of the light emitting structure.
20. The method of claim 19, further comprising forming one or more
electrodes connected to the light emitting structure, and forming
one or more electrodes corresponding the one or more electrodes.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the benefit of Korean Patent
Application No. 10-2014-0020167 filed on Feb. 21, 2014, with the
Korean Intellectual Property Office, the disclosure of which is
incorporated herein by reference.
TECHNICAL FIELD
[0002] The present disclosure relates to a light emitting diode
(LED) package and a method of manufacturing the LED package.
BACKGROUND
[0003] A light emitting diode (LED) is a device including a
material that emits light using electric energy. The energy
generated through an electron-hole recombination in semiconductor
junction parts is converted into light that is to be emitted
therefrom. LEDs are commonly used as light sources in illumination
devices, display devices, and the like.
[0004] In particular, a recent increase in development and
employment of gallium nitride-based LEDs, and the commercialization
of mobile device keypads, turn signal lamps, camera flashes, and
the like, using the gallium nitride-based LEDs, have led to an
acceleration of the development of general lighting devices using
the LEDs. The LEDs have been used for small portable products, and
recently the LEDs are also used for large-sized products having a
high output and a high efficiency, such as backlight units of large
TVs, headlamps of vehicles, general lighting devices, and the
like.
[0005] Accordingly, a method of reducing manufacturing costs for
the mass production of LED packages is provided.
SUMMARY
[0006] An exemplary embodiment in the present disclosure may
provide a novel method of manufacturing alight emitting diode (LED)
package in order to reduce manufacturing costs.
[0007] According to an exemplary embodiment in the present
disclosure, a method of manufacturing the light emitting diode
(LED) package may include forming a light emitting structure having
a first conductivity-type semiconductor layer, an active layer and
a second conductivity-type semiconductor layer on a growth
substrate, and forming first and second electrodes connected to the
first and second conductivity-type semiconductor layers,
respectively. The method also includes bonding a first surface of a
light transmissive substrate opposite to a second surface thereof
to the light emitting structure, identifying positions of the first
and second electrodes that are seen through the second surface of
the light transmissive substrate, forming one or more through holes
in regions of the light transmissive substrate that correspond to
the first and second electrodes, and forming first and second via
electrodes by filling the through holes with a conductive
material.
[0008] The light transmissive substrate may be formed of an
insulating material.
[0009] The insulating material may include SiO.sub.2.
[0010] The method may further include polishing the second surface
of the light transmissive substrate through a chemical and
mechanical polishing process after the bonding of the light
transmissive substrate.
[0011] The bonding of the light transmissive substrate to the light
emitting structure may be performed by applying a light
transmissive adhesive to a surface of the light emitting structure
and bonding the light transmissive substrate to the light
transmissive adhesive.
[0012] The light transmissive adhesive may include water glass or
silicone.
[0013] The light transmissive substrate may be bonded to the light
emitting structure at a temperature of approximately 400.degree. C.
or below.
[0014] The bonding of the light transmissive substrate to the light
emitting structure may be performed through anodic bonding.
[0015] The bonding of the light transmissive substrate to the light
emitting structure may also be performed through fusion
bonding.
[0016] The light transmissive substrate may be formed to have a
thickness of approximately 10 .mu.m to 500 .mu.m.
[0017] The growth substrate may be formed of Si.
[0018] According to still another exemplary embodiment in the
present disclosure, a method of manufacturing a light emitting
diode (LED) package may include forming a light emitting structure
including a first conductivity-type semiconductor layer, an active
layer and a second conductivity-type semiconductor layer on the
growth substrate, and forming first and second electrodes connected
to the first and second conductivity-type semiconductor layers,
respectively. The method also includes disposing a first alignment
key on an upper surface of the light emitting structure, preparing
a light transmissive substrate having a first surface and a second
surface opposite to the first surface, forming first and second via
electrodes penetrating through the first and second surfaces in
regions of the light transmissive substrate that correspond to the
first and second electrodes, disposing a second alignment key on at
least one of the first and second surfaces, and bonding the first
surface of the light transmissive substrate to the upper surface of
the light emitting structure. The light transmissive substrate is
arranged to allow the second alignment key on the light
transmissive substrate to correspond to the first alignment key on
the light emitting structure which is seen through the second
surface of the light transmissive substrate.
[0019] The light transmissive substrate may be formed of an
insulating material.
[0020] The insulating material may include SiO.sub.2.
BRIEF DESCRIPTION OF DRAWINGS
[0021] The above and other aspects, features and advantages of the
present disclosure will be more clearly understood from the
following detailed description taken in conjunction with the
accompanying drawings, in which:
[0022] FIG. 1 is a cross-sectional view of a light emitting diode
(LED) package according to an exemplary embodiment of the present
disclosure;
[0023] FIGS. 2 through 10 are views illustrating major processes in
a method of manufacturing the LED package according to the
exemplary embodiment of the present disclosure;
[0024] FIG. 11 is a side cross-sectional view of a light emitting
structure applicable to the LED package according to the exemplary
embodiment of the present disclosure;
[0025] FIGS. 12 and 13 are views illustrating major processes in a
method of manufacturing the LED package according to another
exemplary embodiment of the present disclosure;
[0026] FIGS. 14 and 15 illustrate examples of a backlight unit to
which the LED package according to the exemplary embodiment of the
present disclosure is applied;
[0027] FIG. 16 illustrates an example of a lighting device to which
the LED package according to the exemplary embodiment of the
present disclosure is applied; and
[0028] FIG. 17 illustrates an example of a headlamp to which the
LED package according to the exemplary embodiment of the present
disclosure is applied.
DETAILED DESCRIPTION
[0029] Exemplary embodiments of the present disclosure will now be
described in detail with reference to the accompanying
drawings.
[0030] The disclosure may, however, be exemplified in many
different forms and should not be construed as being limited to the
specific embodiments set forth herein. Rather, these embodiments
are provided so that this disclosure will be thorough and complete,
and will fully convey the scope of the disclosure to those skilled
in the art.
[0031] In the drawings, the shapes and dimensions of elements may
be exaggerated for clarity, and the same reference numerals will be
used throughout to designate the same or like elements.
[0032] With reference to FIG. 1, a light emitting diode (LED)
package 100 according to an exemplary embodiment of the present
disclosure may include a mounting substrate 140' having first and
second via electrodes 142a and 142b, a light emitting structure 120
mounted on the mounting substrate 140', a wavelength conversion
layer 170 disposed on an upper surface of the light emitting
structure 120, an encapsulation body 160 disposed to enclose the
light emitting structure 120 and the wavelength conversion layer
170.
[0033] The first and second via electrodes 142a and 142b may be
formed in the mounting substrate 140', and the light emitting
structure 120 may be mounted on the first and second via electrodes
142a and 142b, such that first and second electrodes 130a and 130b
of the light emitting structure 120 are electrically connected to
the first and second via electrodes 142a and 142b.
[0034] Specifically, the first and second via electrodes 142a and
142b may be formed to penetrate through a first surface of the
mounting substrate 140' on which the light emitting structure 120
is mounted and a second surface of the mounting substrate 140'
opposite to the first surface. First and second bonding pads 143a
and 143b may be formed on the second surface of the mounting
substrate 140' to which ends of the first and second via electrodes
142a and 142b are exposed, so that both surfaces of the mounting
substrate 140' are electrically connected to each other. The
mounting substrate 140' may be a substrate used for manufacturing a
package in a wafer state, which is a so-called wafer level package
(WLP). Since both surfaces of the mounting substrate 140' are flat,
the size of the package, in which the light emitting structure 120
is mounted on the mounting substrate 140', may be reduced to the
size of the light emitting structure 120.
[0035] Here, the mounting substrate 140' may be formed of a light
transmissive material. Specifically, the light transmissive
material may be light transmissive resin or glass that may have
insulating properties and may be resistant to heat. The light
transmissive resin may include at least one of
polymethylmethacrylate (PMMA) and polycarbonate (PC), and the glass
may include SiO.sub.2. Since such transparent glass has light
transmission properties, an object disposed on one surface of the
glass substrate may be identified from a direction of another
surface of the glass substrate. Accordingly, when the mounting
substrate 140' is formed of the light transmissive material, the
positions of the via electrodes may be easily identified in a
process of manufacturing an LED package. Details thereof will be
provided in the manufacturing process to be described below.
[0036] The light emitting structure 120 may be mounted on the
mounting substrate 140' and may include a first conductivity-type
semiconductor layer 121, an active layer 122 and a second
conductivity-type semiconductor layer 123 sequentially disposed
from an upper portion of the light emitting structure 120. The
first and second conductivity-type semiconductor layers 121 and 123
may be n-type and p-type semiconductor layers formed of nitride
semiconductors, respectively. The present disclosure is not limited
thereto. However, according to the present exemplary embodiment,
the first and second conductivity type semiconductor layers 121 and
123 may be understood as referring to the n-type and the p-type
semiconductor layers, respectively. The first and second
conductivity type semiconductor layers 121 and 123 may be formed of
a material having a composition of Al.sub.xIn.sub.yGa.sub.(1-x-y)N,
where 0.ltoreq.x<1, 0.ltoreq.y<1 and 0.ltoreq.x+y<1. For
example, GaN, AlGaN, InGaN, or the like, may be used therefor.
[0037] The active layer 122 may be a layer for emitting visible
light having a wavelength of approximately 350 nm to 680 nm. The
active layer 122 may be formed of undoped nitride semiconductor
layers having a single-quantum-well (SQW) structure or a
multi-quantum-well (MQW) structure. For example, the active layer
122 may have the MQW structure in which quantum barrier layers and
quantum well layers having a composition of
Al.sub.xIn.sub.yGa.sub.(1-x-y)N (where 0.ltoreq.x<1,
0.ltoreq.y<1, and 0.ltoreq.x+y<1) are alternately stacked,
such that the active layer 122 may have a predetermined energy
bandgap and emit light through the recombination of electrons and
holes in quantum wells. In the case of the MQW structure, an
InGaN/GaN structure may be used, for example. The first and second
conductivity type semiconductor layers 121 and 123 and the active
layer 122 may be formed using crystal growth processes such as
metal organic chemical vapor deposition (MOCVD), molecular beam
epitaxy (MBE), hydride vapor phase epitaxy (HVPE), and the
like.
[0038] The light emitting structure 120 may be used as an LED chip
having a flip-chip structure after the removal of a growth
substrate, and a buffer layer may be further included in order to
reduce crystal defects during the growth of the semiconductor
layers.
[0039] The first and second electrodes 130a and 130b are provided
to allow the first and second conductivity-type semiconductor
layers 121 and 123 to be electrically connected to a power source.
The first and second electrodes 130a and 130b may be disposed to
ohmic-contact the first and second conductivity type semiconductor
layers 121 and 123, respectively.
[0040] The first and second electrodes 130a and 130b may be formed
of a single layer or multilayer structure made of a conductive
material having an ohmic contact with the respective first and
second conductivity type semiconductor layers 121 and 123. For
example, the first and second electrodes 130a and 130b may be
formed by depositing or sputtering at least one of gold (Au),
silver (Ag), copper (Cu), zinc (Zn), aluminum (Al), indium (In),
titanium (Ti), silicon (Si), germanium (Ge), tin (Sn) magnesium
(Mg), tantalum (Ta), chromium (Cr), tungsten (W), ruthenium (Ru),
rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum
(Pt), and a transparent conductive oxide (TCO). The first and
second electrodes 130a and 130b may be disposed on the surface of
the mounting substrate 140' on which the light emitting structure
120 is mounted.
[0041] Various types of LED chips may be employed in the present
exemplary embodiment. FIG. 11 is a side cross-sectional view of an
LED chip applicable to the LED package according to an exemplary
embodiment of the present disclosure.
[0042] An LED chip 300 illustrated in FIG. 11 may include a
substrate 310, a base layer B disposed on the substrate 310, and a
plurality of light emitting nanostructures L disposed on the base
layer B.
[0043] The substrate 310 may be an insulating substrate, a
conductive substrate or a semiconductor substrate. For example, the
substrate 310 may be formed of sapphire, SiC, Si,
MgAl.sub.2O.sub.4, MgO, LiAlO.sub.2, LiGaO.sub.2, GaN or the like.
The base layer B may be formed of a nitride semiconductor
containing Al.sub.xIn.sub.yGa.sub.1-x-yN (where 0.ltoreq.x<1,
0.ltoreq.y<1, and 0.ltoreq.x+y<1), and may be doped with an
n-type impurity such as Si to be converted to have a particular
conductivity-type.
[0044] An insulating layer M having a plurality of openings may be
disposed on the base layer B for growth of the light emitting
nanostructures L (especially, nanocores 321). Portions of the base
layer B may be exposed through the openings, and the nanocores 321
may be formed on the exposed portions of the base layer B. That is,
the insulating layer M may be used as a mask for growth of the
nanocores 321. The insulating layer M may be formed of an
insulating material such as SiO.sub.2 or SiN.sub.x that may be used
in a semiconductor growth process.
[0045] The light emitting nanostructures L may include the first
conductivity-type semiconductor nanocore 321. The light emitting
nanostructures L may also include an active layer 322 and a second
conductivity-type semiconductor layer 323 sequentially disposed on
the surface of the nanocore 321.
[0046] Similar to the base layer B, the nanocore 321 may be doped
with the n-type impurity and be formed of the nitride semiconductor
containing Al.sub.xIn.sub.yGa.sub.1-x-yN (where 0.ltoreq.x<1,
0.ltoreq.y<1, and 0.ltoreq.x+y<1). For example, the nanocore
321 may be formed of n-type GaN. The active layer 322 may have the
MQW structure in which quantum well layers and quantum barrier
layers are alternately stacked. For example, in a case in which the
active layer 322 is formed of the nitride semiconductor, a
GaN/InGaN structure may be used therefor. Alternatively, the active
layer 322 may have the SQW structure. The second conductivity-type
semiconductor layer 323 may be a crystal doped with a p-type
impurity and containing Al.sub.xIn.sub.yGa.sub.1-x-yN (where
0.ltoreq.x<1, 0.ltoreq.y<1, and 0.ltoreq.x+y<1).
[0047] The LED chip 300 may include a contact electrode 335 in the
ohmic contact with the second conductivity-type semiconductor layer
323. The contact electrode 335 used in the present exemplary
embodiment may be formed of a transparent electrode material in
order to allow light to be emitted in a direction toward the light
emitting nanostructures L. For example, the contact electrode 335
may be formed of the transparent electrode material such as ITO. As
necessary, graphene may be used therefor.
[0048] The contact electrode 335 is not limited thereto, and may
include Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au or the like. In
addition, the contact electrode 335 may have two or more layers
formed of Ni/Ag, Zn/Ag, Ni/Al, Zn/Al, Pd/Ag, Pd/Al, Ir/Ag, Ir/Au,
Pt/Ag, Pt/Al, Ni/Ag/Pt, or the like. As necessary, a reflective
electrode structure may be used to allow the LED chip 300 to have a
flip-chip structure.
[0049] An insulating filler 336 may be formed in space between the
light emitting nanostructures L. An insulating material such as
SiO.sub.2 or SiN.sub.x may be used for the insulating filler 336.
Specifically, in order to facilitate the filling of the space
between the light emitting nanostructures L, TEOS
(TetraEthylOrthoSilane), BPSG (BoroPhospho Silicate Glass),
CVD-SiO.sub.2, SOG (Spin-on Glass), or SOD (Spin-on Delectric) may
be used for the insulating filler 336. According to exemplary
embodiments, the contact electrode 335 may be formed to fill all or
some of the space between the light emitting nanostructures L.
[0050] In addition, the LED chip 300 may include first and second
electrodes 330a and 330b. The first electrode 330a may be disposed
on an exposed region of the base layer B, and the second electrode
330b may be disposed on an extended and exposed region of the
contact electrode 335.
[0051] The LED chip 300 may further include a passivation layer
337. The passivation layer 337 may be used to protect the light
emitting nanostructures L together with the insulating filler 336.
The passivation layer 337 may cover and protect the entirety of the
semiconductor region and may firmly fix the first and second
electrodes 330a and 330b in place. The passivation layer 337 may be
formed of a material identical or similar to the material of the
insulating filler 336.
[0052] In the present exemplary embodiment, a tip portion of the
nanocore 321 may have inclined crystal planes (e.g. planes)
different from side crystal planes (e.g. m planes) of the nanocore
321. A current blocking intermediate layer 334 may be formed in the
tip portion of the nanocore 321. The current blocking intermediate
layer 334 may be disposed between the active layer 322 and the
nanocore 321. The current blocking intermediate layer 334 may be
formed of a material having high electrical resistance in order to
block a leakage current that may be caused at the tip portion of
the nanocore 321. For example, the current blocking intermediate
layer 334 may be a semiconductor layer not doped intentionally, or
may be a semiconductor layer doped with a second conductivity-type
impurity different from that of the nanocore 321. For example, in a
case in which the nanocore 321 is formed of n-type GaN, the current
blocking intermediate layer 334 may be an undoped GaN layer or a
GaN layer doped with a p-type impurity such as magnesium (Mg). Such
a current blocking intermediate layer 334 may be a high resistance
region formed of the same material (for example, GaN) but obtained
with various doping concentrations or doping materials, without
being particularly distinguished from an adjacent layer. For
example, GaN may be grown, while an n-type impurity is supplied
thereto, to form the nanocore 321. GaN may continue to be grown,
while the supply of the n-type impurity is blocked or the p-type
impurity such as magnesium (Mg) is supplied thereto, to form the
desired current blocking intermediate layer 334. Alternatively,
while GaN for the nanocore 321 is being grown, a source of aluminum
(Al) and/or indium (In) may be additionally supplied to form the
current blocking intermediate layer 334 having a different
composition of Al.sub.xIn.sub.yGa.sub.1-x-yN (where
0.ltoreq.x<1, 0.ltoreq.y<1, and 0.ltoreq.x+y<1).
[0053] Referring to FIG. 1, the wavelength conversion layer 170 may
be disposed on the upper surface of the light emitting structure
120. The wavelength conversion layer 170 may be formed as a sheet
having a substantially uniform thickness. The wavelength conversion
layer 170 may be a film in which a B-stage material semi-cured at a
room temperature and converted to a liquid phase when heated is
dispersed together with a phosphor.
[0054] Specifically, the semi-cured material may be B-stage
silicone. Here, the wavelength conversion layer 170 may be formed
of a single layer or multiple layers. In a case in which the
wavelength conversion layer 170 is formed of the multiple layers,
different types of phosphor may be provided in respective layers.
The wavelength conversion layer 170 may be formed by mixing the
B-stage resin with the phosphor. For example, a polymer binder
including a resin, a hardener, a hardening catalyst and the like is
mixed with a phosphor to form a B-stage composite.
[0055] The phosphor may be used to convert a wavelength of light to
a wavelength of yellow, red, or green light. Types of phosphor may
be determined based on the wavelength of light emitted from the
active layer 122 of the light emitting structure 120. Specifically,
the phosphor may have the following compositions and colors:
[0056] Oxide-based phosphors: Yellow and Green
Y.sub.3Al.sub.5O.sub.12:Ce, Tb.sub.3Al.sub.5O.sub.12:Ce,
Lu.sub.3Al.sub.5O.sub.12:Ce;
[0057] Silicate-based phosphors: Yellow and Green
(Ba,Sr).sub.2SiO.sub.4:Eu, Yellow and Orange
(Ba,Sr).sub.3SiO.sub.5:Ce;
[0058] Nitride-based phosphors: Green .beta.-SiAlON:Eu, Yellow
La.sub.3Si.sub.6O.sub.11:Ce, Orange .alpha.-SiAlON:Eu, Red
CaAlSiN.sub.3:Eu, Sr.sub.2Si.sub.5N.sub.8:Eu,
SrSiAl.sub.4N.sub.7:Eu;
[0059] Fluoride-based phosphors: KSF-based Red
K.sub.2SiF.sub.6:Mn.sup.4+.
[0060] Phosphor compositions should basically conform to
Stoichiometry, and respective elements may be substituted with
different elements of respective groups of the periodic table. For
example, strontium (Sr) may be substituted with barium (Ba),
calcium (Ca), magnesium (Mg), or the like, of alkaline earths (II
group). Yttrium (Y) may be substituted with terbium (Tb), lutetium
(Lu), scandium (Sc), gadolinium (Gd), or the like, of lanthanoids.
Also, europium (Eu), an activator, may be substituted with cerium
(Ce), terbium (Tb), praseodymium (Pr), erbium (Er), ytterbium (Yb),
or the like, according to a desired energy level. The activator may
be used alone, or a subactivator, or the like, may be additionally
used to change light emitting characteristics.
[0061] In addition, materials such as quantum dots (QDs), or the
like, may be used as materials in place of phosphors. Phosphors and
quantum dots may be used in combination.
[0062] A quantum dot may have a structure including a core (3 nm to
10 nm) such as CdSe, InP, or the like, a shell (0.5 nm to 2 nm)
such as ZnS, ZnSe, or the like, and a ligand for stabilizing the
core and the shell. The quantum dot may create various colors
according to sizes.
[0063] Table 1 below shows types of phosphor in application fields
of white light emitting devices using blue LEDs (wavelength: 440 nm
to 460 nm).
TABLE-US-00001 TABLE 1 Purpose Phosphors LED TV BLU
.beta.-SiAlON:Eu.sup.2+ (Ca, Sr) AlSiN.sub.3:Eu.sup.2+
La.sub.3Si.sub.6O.sub.11:Ce.sup.3+ K.sub.2SiF.sub.6:Mn.sup.4+
Lighting Devices Lu.sub.3Al.sub.5O.sub.12:Ce.sup.3+
Ca-.alpha.-SiAlON:Eu.sup.2+ La.sub.3Si.sub.6N.sub.11:Ce.sup.3+ (Ca,
Sr) AlSiN.sub.3:Eu.sup.2+ Y.sub.3Al.sub.5O.sub.12:Ce.sup.3+
K.sub.2SiF.sub.6:Mn.sup.4+ Side Viewing
Lu.sub.3Al.sub.5O.sub.12:Ce.sup.3+ (Mobile, Notebook PC)
Ca-.alpha.-SiAlON:Eu.sup.2+ La.sub.3Si.sub.6N.sub.11:Ce.sup.3+ (Ca,
Sr) AlSiN.sub.3:Eu.sup.2+ Y.sub.3Al.sub.5O.sub.12:Ce.sup.3+ (Sr,
Ba, Ca, Mg).sub.2SiO.sub.4:Eu.sup.2+ K.sub.2SiF.sub.6:Mn.sup.4+
Electrical Components Lu.sub.3Al.sub.5O.sub.12:Ce.sup.3+ (Vehicle
Head Lamp, etc.) Ca-.alpha.-SiAlON:Eu.sup.2+
La.sub.3Si.sub.6N.sub.11:Ce.sup.3+ (Ca, Sr) AlSiN.sub.3:Eu.sup.2+
Y.sub.3Al.sub.5O.sub.12:Ce.sup.3+ K.sub.2SiF.sub.6:Mn.sup.4+
[0064] The resin used in the wavelength conversion layer 170 may be
a resin having high adhesive properties, high light transmittance,
high resistance to heat and moisture, high photorefraction, and the
like. Epoxy resin or silicone resin which is an inorganic polymer
may be used therefor. In order to secure high adhesive properties,
a silane material or the like may be used as an additive for
improving adhesive strength.
[0065] By using such a wavelength conversion layer 170, the LED
package 100 emitting white light may be provided. The LED package
100 may include active layers that emit light having different
wavelengths, so that the LED package 100 can emit white light
without using the phosphor. For example, in the LED package 100
having the light emitting nanostructures L (see FIG. 11), the
active layers that emit light having different wavelengths under
the same growth conditions may be formed by changing the sizes of
nanocores and/or distances between the nanocores, whereby desired
white light may be produced.
[0066] The encapsulation body 160 may be disposed to enclose the
light emitting structure 120 and the wavelength conversion layer
170. Accordingly, the encapsulation body 160 may protect the light
emitting structure 120 and the wavelength conversion layer 170 from
moisture and heat, and the distribution of light emitted from the
light emitting structure 120 may be adjusted by changing a shape of
a surface of the encapsulation body 160.
[0067] The encapsulation body 160 may be formed of a light
transmissive material. Specifically, the encapsulation body 160 may
be formed of an insulating resin having light transmissive
properties such as a composition selected among a silicon resin, a
modified silicon resin, an epoxy resin, a urethane resin, an
oxetane resin, an acrylic resin, a polycarbonate resin, a polyimide
resin, and a combination thereof. However, the material of the
encapsulation body 160 is not limited thereto, and an inorganic
material having high light resistance such as glass, silica gel or
the like may be used.
[0068] A lens unit 180 may be further formed on the encapsulation
body 160. A shape of the lens unit 180 may be adjusted to control
the distribution of light emitted from the light emitting structure
120. The lens unit 180 may be formed of a light transmissive
material, like the encapsulation body 160. Specifically, the lens
unit 180 may be formed of the insulating resin having the light
transmissive properties such as the composition selected among the
silicon resin, the modified silicon resin, the epoxy resin, the
urethane resin, the oxetane resin, the acrylic resin, the
polycarbonate resin, the polyimide resin, and the combination
thereof. However, the material of the lens unit 180 is not limited
thereto, and the inorganic material having the high light
resistance such as glass, silica gel or the like may be used.
[0069] With reference to FIGS. 2 through 10, a method of
manufacturing the LED package according to the exemplary embodiment
of the present disclosure will be described below.
[0070] First of all, the light emitting structure 120 including the
first conductivity-type semiconductor layer 121, the active layer
122 and the second conductivity-type semiconductor layer 123 may be
formed on a growth substrate 110.
[0071] The growth substrate 110 may be provided as a semiconductor
growth substrate, and may be formed of an insulating material, a
conductive material or a semiconductor material, such as sapphire,
SiC, Si, MgAl.sub.2O.sub.4, MgO, LiAlO.sub.2, LiGaO.sub.2, GaN or
the like. In a case of the growth substrate 110 formed of sapphire,
a crystal having Hexa-Rhombo R3C symmetry, a sapphire substrate has
a lattice constant of 13.001 .ANG. along a C-axis and a lattice
constant of 4.758 .ANG. along an A-axis, and includes a C (0001)
plane, an A (11-20) plane, an R (1-102) plane, and the like. Here,
the C plane is mainly used as a substrate for nitride semiconductor
growth because the C plane facilitates growth of a nitride film and
is stable at high temperatures. Meanwhile, in a case in which the
growth substrate 110 is formed of Si, a Si substrate may be easily
formed to have a large diameter and may be relatively cheap,
whereby manufacturing yields may be improved. Although not shown,
prior to the forming of the light emitting structure 120, a buffer
layer may be further formed on one surface of the growth substrate
110 on which the first conductivity-type semiconductor layer 121 is
to be formed.
[0072] The light emitting structure 120 may be formed by
sequentially stacking the first conductivity-type semiconductor
layer 121, the active layer 122 and the second conductivity-type
semiconductor layer 123.
[0073] The first and second conductivity-type semiconductor layers
121 and 123 may be formed of a nitride semiconductor material
having a composition expressed by Al.sub.xIn.sub.yGa.sub.(1-x-y)N,
(where 0.ltoreq.x<1, 0.ltoreq.y<1, and 0.ltoreq.x+y<1),
and doped with n-type and p-type impurities, respectively, of which
GaN, AlGaN, and InGaN are representative semiconductor materials.
In addition, Si, Ge, Se, Te, C or the like may be used as the
n-type impurities, and Mg, Zn, Be or the like may be used as the
p-type impurities. The first and second conductivity-type
semiconductor layers 121 and 123 may be formed by using a
semiconductor growth method such as metal organic chemical vapor
deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor
phase epitaxy (HVPE), or the like. Specifically, according to the
present exemplary embodiment, the first and second
conductivity-type semiconductor layers 121 and 123 may be formed by
growing GaN on the above-described Si growth substrate 110.
[0074] A mesa-etched surface M may be formed in a region of the
light emitting structure 120. The region of the first
conductivity-type semiconductor layer 121 exposed through a
mesa-etching process may be used as a device separation region. The
mesa-etched surface M may be formed by an appropriate etching
process such as inductive coupled plasma reactive ion etching
(ICP-RIE).
[0075] Next, as illustrated in FIGS. 3 and 4, the first and second
electrodes 130a and 130b may be formed on the first and second
conductivity-type semiconductor layers 121 and 123, respectively.
The first and second electrodes 130a and 130b may include Ag, Ni,
Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au or the like, and may have two or
more layer structure formed of Ni/Ag, Zn/Ag, Ni/Al, Zn/Al, Pd/Ag,
Pd/Al, Ir/Ag. Ir/Au, Pt/Ag, Pt/Al, Ni/Ag/Pt or the like. This
manufacturing process may be performed on a wafer scale as
illustrated in FIG. 4. The first and second electrodes 130a and
130b may have different shapes and may be spaced apart from each
other, and the shapes and arrangements thereof are not limited to
those illustrated in FIG. 4.
[0076] In addition, the other surface of the growth substrate 110
opposite to one surface thereof on which the light emitting
structure 120 is grown may be processed through micromachining
using a chemical mechanical polishing (CMP) method, thereby forming
a thin growth substrate 110'. Here, the CMP method is performed for
planarization of a surface of an object through a combination of
chemical and mechanical actions. However, the present disclosure is
not limited thereto. Thus, a portion of the other surface of the
growth substrate 110 may be chemically etched, or the process of
making the growth substrate 110 thin may be omitted if the growth
substrate is sufficiently thin.
[0077] Meanwhile, an oxide film may be formed on the light emitting
structure 120 to cover the first and second electrodes 130a and
130b, and a surface of the oxide film may be flattened, such that
bonding of a light transmissive substrate 140 may be further
facilitated in a follow-up process.
[0078] Thereafter, as illustrated in FIGS. 5 and 6, the light
transmissive substrate 140 may be bonded to the light emitting
structure 120. The light transmissive substrate 140 may have a
first surface and a second surface opposite to the first surface.
As illustrated in FIG. 6, the light transmissive substrate 140 may
be provided as a wafer. As described above, the light transmissive
substrate 140 may be formed of an insulating material, and light
transmissive resin or glass may be used therefor. Here, the light
transmissive resin may include at least one of
polymethylmethacrylate (PMMA) and polycarbonate (PC), and the glass
may include SiO.sub.2. In addition, the light transmissive
substrate 140 may have a thickness of approximately 10 .mu.m to 500
.mu.m.
[0079] The light transmissive substrate 140 may be bonded to the
light emitting structure 120 by applying a light transmissive
adhesive such as water glass or silicone to an upper surface of the
light emitting structure 120 and heating the same at a temperature
of approximately 400.degree. C. or below. In addition, the light
transmissive substrate 140 and the light emitting structure 120 may
be bonded to each other through anodic bonding or fusion bonding at
a temperature of approximately 400.degree. C. or below. In a case
in which the light transmissive substrate 140 is bonded to the
light emitting structure 120 at a relatively low temperature of
approximately 400.degree. C. or below, damage to the light emitting
structure 120 from the heat may be reduced as compared with a case
in which the bonding process is performed at a relatively high
temperature. In particular, in the case of the LED package to which
light emitting nanostructures Las illustrated in FIG. 11 are
applied, it is necessary to precisely adjust the concentration of
indium (In) in order to obtain active layers that emit light having
different wavelengths. In the case in which the light transmissive
substrate 140 is bonded to the light emitting nanostructures L at a
relatively high temperature, indium (In) contained within the
active layers may be dispersed due to the heat, resulting in a
change in concentration of indium (In) within the active layers.
Such a change in concentration of indium (In) within the active
layers may cause a change in wavelength of light emitted from the
LED package, resulting in deterioration of reliability of the LED
package. Therefore, when the light transmissive substrate 140 is
bonded at the relatively low temperature as in the present
exemplary embodiment, such a change in the wavelength of the light
emitted from the LED package may be prevented.
[0080] Due to the light transmissive properties of the light
transmissive substrate 140, a contact surface between the light
transmissive substrate 140 and the light emitting structure 120 may
be seen through the transparent light transmissive substrate, and
the positions of the first and second electrodes 130a and 130b of
the light emitting structure 120 may be easily identified.
Therefore, it is easy to determine the positions of the via
electrodes 142a and 142b to be connected to the first and second
electrodes 130a and 130b in a follow-up process.
[0081] The positions of the first and second electrodes 130a and
130b of the light emitting structure 120 may be identified using an
optical instrument C of a general exposure system. In general,
since a Si substrate or the like used as the mounting substrate
140' is opaque, the positions of the electrodes of the light
emitting structure 120 are not identified using such an optical
instrument C of a general exposure system. In this case, a
relatively expensive instrument such as an infrared camera is
generally used to identify the positions of the first and second
electrodes 130a and 130b. According to the exemplary embodiment of
the present disclosure, such an existing opaque substrate is
replaced with the transparent, light transmissive substrate, and
thus the positions of the electrodes may be easily identified using
the optical instrument C of a general exposure system. Accordingly,
manufacturing costs and time of the LED package may be reduced.
[0082] Meanwhile, the other surface of the light transmissive
substrate 140 opposite to one surface thereof in contact with the
light emitting structure 120 may be processed through
micromachining using a chemical mechanical polishing (CMP) method,
thereby allowing the light transmissive substrate 140 to have a
reduced thickness. However, the present disclosure is not limited
thereto. Thus, a portion of the other surface of the light
transmissive substrate 140 may be chemically etched, or the process
of making the light transmissive substrate 140 thin may be omitted
if the light transmissive substrate 140 is sufficiently thin.
[0083] Next, as illustrated in FIG. 7, first and second through
holes 141a and 141b may be formed in the light transmissive
substrate 140. The first and second through holes 141a and 141b may
be formed in regions corresponding to the first and second
electrodes 130a and 130b of the light emitting structure 120.
[0084] The first and second through holes 141a and 141b may be
provided as at least one pair of holes in a first direction
perpendicular to one surface of the light transmissive substrate
140 which is in contact with the light emitting structure 120. The
first and second through holes 141a and 141b may be provided as
tube-like space penetrating through the light transmissive
substrate 140 in the first direction. The spaces may have various
shapes such as a cylindrical shape, a polyprism shape, or the like.
In the present exemplary embodiment, the space may be formed to
have a cylindrical shape.
[0085] The first and second through holes 141a and 141b may be
formed by dry-etching the light transmissive substrate 140 through
oxide-deep reactive ion etching (oxide-DRIE) or the like. However,
this process is not limited thereto, and various types of dry or
wet etching may be used. Alternatively, the first and second
through holes 141a and 141b may be formed by laser-drilling.
[0086] Then, as illustrated in FIG. 8, the first and second through
holes 141a and 141b may be filled with a conductive material such
as a metal or the like, thereby forming the first and second via
electrodes 142a and 142b.
[0087] The first and second via electrodes 142a and 142b may be
formed by preparing a paste using a conductive material including
Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au or the like and filling
the first and second through holes 141a and 141b with the paste, or
may be formed through plating.
[0088] In the present exemplary embodiment, since the first and
second via electrodes 142a and 142b may be formed in the light
transmissive substrate 140 that is formed of an insulating material
such as glass, it is not necessary to form an oxide film on inner
surfaces of the via electrodes for electrical insulation, unlike a
substrate formed of a semiconductor material such as Si. Therefore,
the process of forming the via electrodes may be simplified.
[0089] Thereafter, as illustrated in FIG. 9, a support substrate
150 may be bonded to the bottom of the light transmissive substrate
140, and the thin growth substrate 110' may be removed. In a case
in which the light transmissive substrate 140 is used as the growth
substrate, the thin growth substrate may not be removed. An
adhesive 151 may be further applied to the bottom of the light
transmissive substrate 140. The support substrate 150 is a support
body for preventing damage to the light emitting structure 120 in a
follow-up process, and various types of substrate may be used
therefor. In the present exemplary embodiment, a Si substrate may
be used.
[0090] Then, as illustrated in FIG. 10, the wavelength conversion
layer 170 may be disposed on the light emitting structure 120, and
the encapsulation body 160 may be formed to enclose the light
emitting structure 120 and the wavelength conversion layer 170. In
addition, the lens unit 180 may be bonded to the top of the
encapsulation body 160. A breaking process for separating
individual LED packages 100 may be performed using a blade B.
Finally, the LED package 100 of FIG. 1 may be manufactured.
[0091] Hereinafter, a method of manufacturing an LED package
according to another exemplary embodiment of the present disclosure
will be described. FIGS. 12 and 13 are views illustrating major
processes in a method of manufacturing the LED package according to
another exemplary embodiment of the present disclosure.
[0092] The manufacturing method according to the present exemplary
embodiment is different from that the method according to the
previous exemplary embodiment. In the method shown in FIGS. 12 and
13, a light transmissive substrate 240 may be bonded to a light
emitting structure 220 after via electrodes are formed in the light
transmissive substrate 240. Since details of the other processes
are identical to those described in the previous exemplary
embodiment, different processes will mainly be described
hereinafter.
[0093] As illustrated in FIG. 12, the light emitting structure 220
is similar to the light emitting structure 120 of FIG. 3, except
that a first alignment key 233 is formed on an exposed surface of
the light emitting structure 220. In addition, first and second via
electrodes 242a and 242b and bonding pads 243a and 243b may be
formed in a light transmissive substrate 240 before the light
transmissive substrate 240 is bonded to the light emitting
structure 220. Furthermore, a second alignment key 244 may be
formed to correspond to the first alignment key 233 on a surface of
the light transmissive substrate 240 which is bonded to the light
emitting structure 220.
[0094] As illustrated in FIG. 13, the light emitting structure 220
and the light transmissive substrate 240 may be bonded to each
other after the first alignment key 233 and the second alignment
key 244 are arranged using an optical instrument C of a general
exposure system. In general, a Si substrate or the like used as the
mounting substrate is opaque, causing difficulties in identifying
the positions of the alignment keys disposed on the mounting
substrate and the light emitting structure using such the optical
instrument C of the general exposure system. Therefore, the
positions of the mounting substrate and the light emitting
structure have been determined by capturing images of the alignment
keys disposed on the mounting substrate and the light emitting
structure, and analyzing the positions of the alignment keys prior
to the bonding thereof. This process has required an expensive
imaging device capable of capturing the images of the alignment
keys disposed on the mounting substrate and the light emitting
structure at the same time. In the present exemplary embodiment,
such an existing opaque substrate is replaced with the transparent,
light transmissive substrate, and thus the first alignment key 233
disposed on the light emitting structure 220 which is seen through
the transparent, light transmissive substrate 240 and the second
alignment key 244 disposed on the light transmissive substrate 240
may be easily arranged using the optical instrument C of the
general exposure system. Accordingly, manufacturing costs and time
of the LED package may be reduced.
[0095] The LED package according to the above-described exemplary
embodiments may be advantageously applied to various products.
[0096] FIGS. 14 and 15 illustrate examples of a backlight unit to
which the LED package according to the exemplary embodiment of the
present disclosure is applied.
[0097] Referring to FIG. 14, the backlight unit 1000 includes at
least one light source 1001 mounted on a substrate 1002 and at
least one optical sheet 1003 disposed above the light source 1001.
The aforementioned semiconductor light emitting device or the
aforementioned package having the semiconductor light emitting
device may be used as the light source 1001. The light source 1001
in the backlight unit 1000 of FIG. 14 emits light toward a liquid
crystal display (LCD) device disposed thereabove.
[0098] A light source 2001 mounted on a substrate 2002 in a
backlight unit 2000 as another example illustrated in FIG. 15 emits
light laterally, and the light is incident to a light guide plate
2003 such that the backlight unit 2000 may serve as a surface light
source. The light travelling to the light guide plate 2003 may be
emitted upwardly, and a reflective layer 2004 may be disposed below
a lower surface of the light guide plate 2003 in order to improve a
light extraction efficiency.
[0099] FIG. 16 is an exploded perspective view illustrating an
example of a lighting device to which the semiconductor light
emitting device according to the exemplary embodiment of the
present disclosure is applied.
[0100] A lighting device 3000 is illustrated, for example, as a
bulb-type lamp in FIG. 16, and includes a light emitting module
3003, a driver 3008, and an external connector 3010.
[0101] In addition, the lighting device 3000 may further include
exterior structures such as external and internal housings 3006 and
3009, a cover 3007, and the like. The light emitting module 3003
may include a light source 3001 having the aforementioned
semiconductor light emitting device package structure or a
structure similar thereto, and a circuit board 3002 on which the
light source 3001 is mounted. For example, first and second
electrodes of the semiconductor light emitting device may be
electrically connected to an electrode pattern of the circuit board
3002. In the present exemplary embodiment, a single light source
3001 is mounted on the circuit board 3002. However, a plurality of
light sources may be mounted thereon as necessary.
[0102] The external housing 3006 may serve as a heat radiator. The
external housing 3006 may include a heat sink plate 3004 directly
contacting the light emitting module 3003 to thereby improve heat
dissipation, and heat radiating fins 3005 surrounding a lateral
surface of the lighting device 3000. The cover 3007 may be disposed
above the light emitting module 3003 and may have a convex lens
shape. The driver 3008 may be disposed inside the internal housing
3009 and be connected to the external connector 3010 such as a
socket structure to receive power from an external power source. In
addition, the driver 3008 may convert the received power into power
appropriate for driving the light source 3001 of the light emitting
module 3003 and supply the converted power thereto. For example,
the driver 3008 may be configured as an AC-DC converter, a
rectifying circuit part, or the like.
[0103] FIG. 17 illustrates an example of a headlamp to which the
semiconductor light emitting device according to the exemplary
embodiment of the present disclosure is applied.
[0104] With reference to FIG. 17, a headlamp 4000 used in a vehicle
or the like may include a light source 4001, a reflector 4005 and a
lens cover 4004. The lens cover 4004 may include a hollow guide
part 4003 and a lens 4002. The light source 4001 may include the
aforementioned semiconductor light emitting device or the
aforementioned package having the same.
[0105] The headlamp 4000 may further include a heat radiator 4012
externally dissipating heat generated in the light source 4001. The
heat radiator 4012 may include a heat sink 4010 and a cooling fan
4011 in order to effectively dissipate heat. In addition, the
headlamp 4000 may further include a housing 4009 allowing the heat
radiator 4012 and the reflector 4005 to be fixed thereto and
supporting them. The housing 4009 may include a body 4006 and a
central hole 4008 formed in one surface thereof, to which the heat
radiator 4012 is coupled.
[0106] The housing 4009 may include a forwardly open hole 4007
formed in another surface thereof integrally connected to one
surface thereof and bent in a direction perpendicular thereto. The
reflector 4005 may be fixed to the housing 4009, such that light
generated in the light source 4001 may be reflected by the
reflector 4005, pass through the forwardly open hole 4007, and be
emitted outwardly.
[0107] As set forth above, in the method of manufacturing the LED
package according to exemplary embodiments of the present
disclosure, the light transmissive substrate is used to effectively
simplify the arrangement of electrodes, whereby manufacturing costs
of the LED package may be reduced.
[0108] While exemplary embodiments have been shown and described
above, it will be apparent to those skilled in the art that
modifications and variations could be made without departing from
the spirit and scope of the present disclosure as defined by the
appended claims.
* * * * *