U.S. patent application number 14/707454 was filed with the patent office on 2015-08-27 for functional film, liquid immersion member, method of manufacturing liquid immersion member, exposure apparatus, and device manufacturing method.
The applicant listed for this patent is NIKON CORPORATION. Invention is credited to Tsukasa KISHIUME, Yusuke TAKI.
Application Number | 20150241784 14/707454 |
Document ID | / |
Family ID | 51227546 |
Filed Date | 2015-08-27 |
United States Patent
Application |
20150241784 |
Kind Code |
A1 |
KISHIUME; Tsukasa ; et
al. |
August 27, 2015 |
FUNCTIONAL FILM, LIQUID IMMERSION MEMBER, METHOD OF MANUFACTURING
LIQUID IMMERSION MEMBER, EXPOSURE APPARATUS, AND DEVICE
MANUFACTURING METHOD
Abstract
A mesh member including a base material having a mesh portion
and a film of Ti-doped tetrahedral amorphous carbon coated on the
mesh portion. An atomic ratio of Ti to C in a composition of the
film (ta-C:Ti film) is equal to or greater than 0.03 and equal to
or less than 0.09. The atomic ratio of Ti to C is equal to a number
of Ti atoms occupying the film divided by a sum of a number of
carbon atoms having an sp.sup.3 hybrid orbital and a number of
carbon atoms having an sp.sup.2 hybrid orbital occupying the
film.
Inventors: |
KISHIUME; Tsukasa;
(Kawasaki-shi, JP) ; TAKI; Yusuke;
(Sagamihara-shi, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
NIKON CORPORATION |
Tokyo |
|
JP |
|
|
Family ID: |
51227546 |
Appl. No.: |
14/707454 |
Filed: |
May 8, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
14159871 |
Jan 21, 2014 |
9057955 |
|
|
14707454 |
|
|
|
|
61755098 |
Jan 22, 2013 |
|
|
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Current U.S.
Class: |
428/137 |
Current CPC
Class: |
C04B 35/52 20130101;
Y10T 428/265 20150115; Y10T 442/10 20150401; G03F 7/11 20130101;
G03F 7/2041 20130101; Y10T 428/24322 20150115; G03F 7/70341
20130101; Y10T 428/31678 20150401 |
International
Class: |
G03F 7/20 20060101
G03F007/20; C04B 35/52 20060101 C04B035/52 |
Claims
1. A mesh member comprising: a base material having a mesh portion;
and a film of Ti-doped tetrahedral amorphous carbon coated on the
mesh portion, wherein: an atomic ratio of Ti to C in a composition
of the film (ta-C:Ti film) is equal to or greater than 0.03 and
equal to or less than 0.09; and the atomic ratio of Ti to C is
equal to a number of Ti atoms occupying the film divided by a sum
of a number of carbon atoms having an sp.sup.3 hybrid orbital and a
number of carbon atoms having an sp.sup.2 hybrid orbital occupying
the film.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This is a Continuation of application Ser. No. 14/159,871,
filed Jan. 21, 2014, which in turn is a non-provisional application
claiming priority to and the benefit of U.S. provisional
application No. 61/755,098, filed on Jan. 22, 2013. The disclosure
of the prior applications is hereby incorporated by reference
herein in its entirety.
BACKGROUND
[0002] 1. Field of the Invention
[0003] The present invention relates to a functional film, a liquid
immersion member, a method of manufacturing a liquid immersion
member, an exposure apparatus, and a device manufacturing method.
More specifically, the present invention relates to a functional
film having a surface property with both hydrophilic and
antifouling properties, to a liquid immersion member using the
functional film, to a method of manufacturing a liquid immersion
member, to an exposure apparatus, and to a device manufacturing
method.
[0004] 2. Description of Related Art
[0005] In exposure apparatuses used in a photolithography process,
a liquid immersion exposure apparatus that exposes a substrate with
exposure light through liquid is known, for example, as disclosed
in United States patent application, Publication No. 2008/266533
and United States patent application, Publication No.
2005/018155.
SUMMARY
[0006] In liquid immersion exposure apparatuses, components
contained in a resist or a topcoat on the surface of a wafer which
is a substrate may be eluted into liquid (pure water) in a state
where a liquid immersion region is formed on an object such as a
substrate. For this reason, there is the possibility of resist or
topcoat components eluted into liquid (pure water) being
reprecipitated on the surface of a member having the liquid
immersion region formed therein, and the precipitates being peeled
off by a water flow (liquid flow) and being attached to the
substrate. When the substrate is exposed in a state where the
precipitates are attached to the substrate, there is the
possibility of exposure defects (such as, for example, a pattern
defect formed on the substrate) and a defective device. Further,
foreign substances mixed into liquid for any reason are attached to
the member having the liquid immersion region formed therein, and
thus the substrate may be exposed in a state where the attached
foreign substances are mixed into the liquid again.
[0007] For this reason, it is necessary to periodically clean the
member having the liquid immersion region formed therein, and to
remove the precipitates on the surface, but an increase in the
cleaning time and frequency can lead to productivity
deterioration.
[0008] In addition, in order to hold liquid immersion water, the
surface of the member having the liquid immersion region formed
therein is required to have a hydrophilic property. Further, it is
required that the surface of the member as unlikely as possible to
be contaminated. That is, a surface property with both hydrophilic
and antifouling properties is required for the member which is
mounted in the exposure apparatus and has the liquid immersion
region formed therein. Hitherto, functional films having such
surface properties have been not present.
[0009] An object of an aspect of the present invention is to
provide a functional film having a surface property with both
hydrophilic and antifouling properties. In addition, another object
of an aspect of the present invention is to provide a liquid
immersion member, a method of manufacturing a liquid immersion
member, and an exposure apparatus which are capable of reducing the
number of exposure defects and reducing deteriorations in
productivity. Further, another object of an aspect of the present
invention is to provide a device manufacturing method which is
capable of reducing the number of defective devices and reducing
deteriorations in productivity.
[0010] A functional film according to an aspect of the present
invention is a functional film which is applied to a surface of a
base material used in a state of being immersed in liquid, the
functional film including a film of Ti-doped tetrahedral amorphous
carbon (ta-C:Ti film).
[0011] For example, in the aspect described above, in a composition
of the film, a, which is defined by the following Expression (1)
and is an atomic ratio of Ti to C (Ti/C atomic ratio), is equal to
or greater than 0.03 and equal to or less than 0.09.
[ Expression 1 ] .alpha. = ( Ti / C atomic ratio ) = ( number of Ti
atoms ) / { ( number of sp 3 - C atoms ) + ( number of sp 2 - C
atoms ) } ( 1 ) ##EQU00001##
[0012] here, (number of Ti atoms): number of Ti atoms occupying the
film
[0013] (number of sp.sup.3-C atoms): number of carbon atoms having
an sp.sup.3 hybrid orbital occupying the film
[0014] (number of sp.sup.2-C atoms): number of carbon atoms having
an sp.sup.2 hybrid orbital occupying the film
[0015] In the aspect described above, a static contact angle 13 of
pure water at a surface of the film can be equal to or less than 30
degrees.
[0016] In the aspect described above, a contamination index .gamma.
of a surface of the film which is obtained through comparison with
a surface of pure Ti can be equal to or less than 80%.
[0017] In the aspect described above, the base material can be
formed of Ti.
[0018] For example, in the aspect described above, the base
material can be formed of Ti, and a proportion .delta., which is
defined by the following Expression (2), of carbon atoms
(sp.sup.3-C atoms) having an sp.sup.3 hybrid orbital occupying the
film can be equal to or less than 59%.
[ Expression 2 ] .delta. = ( proportion of sp 3 - C atoms ) = (
number of sp 3 - C atoms ) / { ( number of sp 3 - C atoms ) + (
number of sp 2 - C atoms ) + ( number of Ti atoms ) } ( 2 )
##EQU00002##
[0019] here, (number of Ti atoms): number of Ti atoms occupying the
film
[0020] (number of sp.sup.3-C atoms): number of carbon atoms having
an sp.sup.3 hybrid orbital occupying the film
[0021] (number of sp.sup.2-C atoms): number of carbon atoms having
an sp.sup.2 hybrid orbital occupying the film
[0022] A liquid immersion member according to an aspect of the
present invention is a liquid immersion member having a liquid
immersion space formed therein in a state where liquid is held
between an object and the liquid immersion member so that an
optical path of exposure light with which the object is irradiated
is filled with the liquid, wherein the liquid immersion member is
constituted of the base material covered with the functional film
according to the aspect described above, and the base material has
a mesh shape.
[0023] An exposure apparatus according to an aspect of the present
invention is an exposure apparatus that exposes a substrate using
exposure light through liquid, the exposure apparatus including the
liquid immersion member according to the aspect described
above.
[0024] In the aspect described above, the exposure apparatus can
include the liquid immersion member in a portion of a liquid
recovery mechanism that recovers liquid.
[0025] A device manufacturing method according to an aspect of the
present invention includes: a step of exposing a substrate using
the exposure apparatus according to the aspect described above; and
a step of developing the exposed substrate.
[0026] A functional film according to an aspect of the present
invention is a functional film which is applied to a surface of a
base material, the functional film including a film of Ti-doped
tetrahedral amorphous carbon (ta-C:Ti film), wherein in a
composition of the film, a, which is defined by the following
Expression (3) and is an atomic ratio of Ti to C (Ti/C atomic
ratio), is equal to or greater than 0.03 and equal to or less than
0.09.
[ Expression 3 ] .alpha. = ( Ti / C atomic ratio ) = ( number of Ti
atoms ) / { ( number of sp 3 - C atoms ) + ( number of sp 2 - C
atoms ) } ( 3 ) ##EQU00003##
[0027] here, (number of Ti atoms): number of Ti atoms occupying the
film
[0028] (number of sp.sup.3-C atoms): number of carbon atoms having
an sp.sup.3 hybrid orbital occupying the film
[0029] (number of sp.sup.2-C atoms): number of carbon atoms having
an sp.sup.2 hybrid orbital occupying the film
[0030] For example, in the aspect described above, a thickness of
the film is equal to or greater than 10 nm and equal to or less
than 1 .mu.m.
[0031] According to aspects of the present invention, it is
possible to provide a functional film having a surface property
with both hydrophilic and antifouling properties. In addition,
according to aspects of the present invention, it is possible to
provide a liquid immersion member, a method of manufacturing a
liquid immersion member, and an exposure apparatus which are
capable of improving throughput, and reducing the number of
exposure defects and reducing deteriorations in productivity.
Further, according to aspects of the present invention, it is
possible to provide a device manufacturing method which is capable
of reducing the number of defective devices and reducing
deteriorations in productivity.
BRIEF DESCRIPTION OF THE DRAWINGS
[0032] FIG. 1 is a cross-sectional view showing a functional film
according to an embodiment of the present invention.
[0033] FIG. 2A is a schematic configuration diagram showing an
example of an FCVA film formation apparatus.
[0034] FIG. 2B is a diagram showing a method of manufacturing a
liquid immersion member according to a first embodiment.
[0035] FIG. 2C is a diagram showing a method of manufacturing the
liquid immersion member according to the first embodiment.
[0036] FIG. 3 is an exterior photograph obtained by capturing an
image of a film surface of each sample after a contamination
acceleration test.
[0037] FIG. 4 is a diagram showing results obtained by measuring
the quantified degree of contamination and the static contact angle
of pure water with respect to a ta-C film and a ta-C:Ti film having
various Ti/C atomic ratios.
[0038] FIG. 5 is a diagram showing chemical compositions of the
ta-C:Ti film fabricated using a graphite raw material having
various Ti concentrations.
[0039] FIG. 6 is a diagram showing relationships between bias
voltages and the chemical compositions of the ta-C:Ti film.
[0040] FIG. 7 is a schematic configuration diagram showing an
exposure apparatus according to the first embodiment.
[0041] FIG. 8 is a cross-sectional side view showing the vicinity
of the liquid immersion member according to the first
embodiment.
[0042] FIG. 9A is a diagram showing an example of a mesh member
according to the first embodiment.
[0043] FIG. 9B is a diagram showing an example of the mesh member
according to the first embodiment.
[0044] FIG. 9C is a diagram showing an example of the mesh member
according to the first embodiment.
[0045] FIG. 10 is a cross-sectional side view showing the vicinity
of a liquid immersion member according to a second embodiment.
[0046] FIG. 11 is a cross-sectional side view showing the vicinity
of a liquid immersion member according to a third embodiment.
[0047] FIG. 12 is a cross-sectional side view showing the vicinity
of a liquid immersion member according to a fourth embodiment.
[0048] FIG. 13 is a cross-sectional side view showing the vicinity
of a liquid immersion member according to a fifth embodiment.
[0049] FIG. 14 is a cross-sectional side view showing the vicinity
of a liquid immersion member according to a sixth embodiment.
[0050] FIG. 15 is a diagram when the liquid immersion member shown
in FIG. 14 is seen from the upper side.
[0051] FIG. 16 is a diagram when the liquid immersion member shown
in FIG. 14 is seen from the lower side.
[0052] FIG. 17 is an enlarged view showing a portion of the liquid
immersion member shown in FIG. 14.
[0053] FIG. 18 is a flow diagram showing an example of a micro
device manufacturing process.
DESCRIPTION OF EMBODIMENTS
[0054] Hereinafter, embodiments of the present invention will be
described with reference to the accompanying drawings, but the
present invention is not limited thereto.
[0055] <Functional Film>
[0056] FIG. 1 is a cross-sectional view showing a functional film
according to an embodiment of the present invention.
[0057] As a result of having repeated assiduous research in order
to overcome the above-mentioned problems, the inventors have
succeeded in fabricating a functional film with both hydrophilic
and antifouling properties by controlling the Ti content of an
amorphous carbon film.
[0058] As shown in FIG. 1, a functional film 208B according to the
embodiment of the present invention is a functional film which is
applied to the surface of a base material 208A that is used in a
state of being immersed in liquid. The functional film 208B is a
Ti-doped tetrahedral amorphous carbon film (hereinafter, referred
to as a "ta-C:Ti film"). The material of the base material 208A is
not particularly limited, but silicon (Si) or titanium (Ti), for
example, can be used. A structure having the functional film 208B
disposed on the surface of the base material 208A is also called a
sample 208 below.
[0059] In the present embodiment, the functional film (ta-C:Ti
film) 208B can be formed on at least a portion of a region of the
base material 208A which comes into contact with liquid by a
filtered cathodic vacuum arc method (FCVA method).
[0060] An a-C:Ti film can be fabricated using a CVD method such as
a microwave plasma CVD (chemical vapor deposition) method, a
direct-current plasma CVD method, a high-frequency plasma CVD
method, and an effective magnetic field plasma CVD method, or a PVD
method (physical vapor deposition method) such as an ion beam
deposition method, an ion beam sputtering method, a magnetron
sputtering method, a laser evaporation method, a laser sputtering
method, and an arc ion plating method, but the ta-C:Ti film is not
likely to be fabricated.
[0061] In addition, among the above-mentioned deposition methods,
the FCVA method is a deposition method which is capable of
performing coating uniformly even on a base material having a
complicated shape and with a high adhesion force even at room
temperature.
[0062] The FCVA method is a deposition method in which particles
ionized by performing arc discharge on a target are generated, and
a film is formed by guiding only the particles to a substrate. A
schematic configuration diagram of an FCVA apparatus 200 is shown
in FIG. 2A. In the FCVA apparatus 200, an arc plasma generation
chamber 201 having a graphite target 202 installed therein and a
deposition chamber 206 are connected to each other by a space
filter 205. The deposition chamber 206 includes a substrate holder
207 therein. The substrate holder 207 fixes the base material 208A,
and can incline the base material 208A in a .theta.X direction or
rotate the base material in a .theta.Y direction by a driving means
which is not shown. The space filter 205 is bent double in a
-X-axis direction and a Y-axis direction. An electromagnetic coil
203 is wound around the space filter 205, and an ion scan coil 204
is wound in the vicinity of a communication portion with the
deposition chamber 206.
[0063] In order to form the ta-C:Ti film using the FCVA method, a
direct-current voltage is first applied to the graphite target 202
within the arc plasma generation chamber 201, to thereby perform
arc discharge and generate arc plasma. Neutral particles, C.sup.+
ions, Ti.sup.+ ions, Ti.sup.2+ ions, Ti.sup.3+ ions, Ti.sup.4+
ions, and other ions in the generated arc plasma are transported to
the space filter 205. In the course of passing through the space
filter 205, the neutral particles are trapped by the
electromagnetic coil 203, and only the C.sup.+ ions, the Ti.sup.+
ions, the Ti.sup.2+ ions, the Ti.sup.3+ ions, the Ti.sup.4+ ions,
and other ions are guided into the deposition chamber 206. In this
case, the flight direction of an ion stream can be changed to any
direction by the ion scan coil 204. A negative bias voltage is
applied to the base material 208A within the deposition chamber
206. The C.sup.+ ions, the Ti.sup.+ ions, the Ti.sup.2+ ions, the
Ti.sup.3+ ions, the Ti.sup.4+ ions, and other ions which are
ionized by the arc discharge are accelerated by the bias voltage,
and are deposited on the base material 208A as a dense film.
[0064] The ta-C:Ti film formed in this manner is a solid film
constituted of C atoms and Ti atoms, and is classified broadly into
sp.sup.2-C having an sp.sup.2 hybrid orbital and sp.sup.3-C having
an sp.sup.3 hybrid orbital with respect to C.
[0065] In the FCVA method, the proportion of sp.sup.3-C can be
controlled by controlling the bias voltage, and the ta-C film and
the ta-C:Ti film can be formed. Specifically, in the FCVA method,
the content ratio of sp.sup.2-C/sp.sup.3-C in the ta-C film and the
ta-C:Ti film can be controlled by adjusting the bias voltage during
film formation. The ta-C:Ti film having a proportion of sp.sup.3-C
equal to or less than 59% can be formed by adjusting the bias
voltage.
[0066] On the other hand, the Ti content in the ta-C:Ti film can be
controlled by changing the Ti content in a Ti-containing graphite
sintered body used as a raw material.
[0067] In addition, in the FCVA method, only the C.sup.+ ions, the
Ti.sup.+ ions, the Ti.sup.2+ ions, the Ti.sup.3+ ions, the
Ti.sup.4+ ions, and other ions which have substantially the same
flight energy are guided into the deposition chamber 206, and ion
impact energy of various ion particles incident on the base
material 208A can be controlled by controlling the bias voltage
which is applied to the base material 208A. Therefore, uniform film
formation can be performed even in the base material 208A having a
complicated shape.
[0068] Regarding the composition of the ta-C:Ti film, when the
atomic ratio of Ti to C (Ti/C atomic ratio) is defined as .alpha.,
.alpha. is expressed by the following Expression (1), and .alpha.
is equal to or greater than 0.03 and equal to or less than 0.09.
Thereby, the ta-C:Ti film has a surface property with both
hydrophilic and antifouling properties. When a is less than 0.03,
the film has an antifouling property, but does not have a
sufficient hydrophilic property. On the other hand, when a is
greater than 0.09, the film has a super-hydrophilic property, but
does not have a sufficient antifouling property.
[ Expression 1 ] .alpha. = ( Ti / C atomic ratio ) = ( number of Ti
atoms ) / { ( number of sp 3 - C atoms ) + ( number of sp 2 - C
atoms ) } ( 1 ) ##EQU00004##
[0069] Here, (number of Ti atoms): number of Ti atoms occupying the
film
[0070] (number of sp.sup.3-C atoms): number of carbon atoms having
an sp.sup.3 hybrid orbital occupying the film
[0071] (number of sp.sup.2-C atoms): number of carbon atoms having
an sp.sup.2 hybrid orbital occupying the film
[0072] When the static contact angle of pure water at the surface
of the functional film 208B formed of such a ta-C:Ti film is
defined as .beta., .beta. can be set to be equal to or less than 30
degrees. Thereby, the functional film 208B has a hydrophilic
property.
[0073] In addition, when the contamination index of the surface of
the functional film 208B formed of the ta-C:Ti film which is
obtained through comparison with a surface of pure Ti is defined as
.gamma., .gamma. can be set to be equal to or less than 80%.
Thereby, the functional film 208B has an antifouling property.
[0074] In this manner, the functional film 208B formed of the
ta-C:Ti film has a surface property with both hydrophilic and
antifouling properties.
[0075] In addition, when the base material 208A is formed of
titanium (Ti), the proportion .delta. of carbon atoms (sp.sup.3-C
atoms) having an sp.sup.3 hybrid orbital occupying the functional
film which is defined in the following Expression (2) can be set to
be equal to or less than 59%. Thereby, the internal stress of the
functional film 208B is kept low, and a sufficient adhesion force
to the base material 208A can be secured.
[ Expression 2 ] .delta. = ( proportion of sp 3 - C atoms ) = (
number of sp 3 - C atoms ) / { ( number of sp 3 - C atoms ) + (
number of sp 2 - C atoms ) + ( number of Ti atoms ) } ( 2 )
##EQU00005##
[0076] Here, (number of Ti atoms): number of Ti atoms occupying the
film
[0077] (number of sp.sup.3-C atoms): number of carbon atoms having
an sp.sup.3 hybrid orbital occupying the film
[0078] (number of sp.sup.2-C atoms): number of carbon atoms having
an sp.sup.2 hybrid orbital occupying the film
Examples
[0079] Hereinafter, the present invention will be described more
specifically on the basis of examples studied in order to evaluate
the characteristics of the functional film according to the
embodiment of the present invention, but the present invention is
not limited to these examples.
[0080] In the present examples, the sample 208 was fabricated by
forming the Ti-doped tetrahedral amorphous carbon film (ta-C:Ti
film) 208B as a functional film and the pure Ti film as a
comparative experiment, on the base material 208A formed of
plate-like Si, and the characteristics thereof were evaluated.
[0081] "Manufacturing Example"
[0082] The base material 208A was ultrasonically cleaned in an
organic solvent, an alkaline solution, and pure water. The base
material 208A after cleaning was installed so that film formation
was performed on one surface (hereinafter, referred to as the A
surface), on a base material holder within the deposition chamber
of an FCVA film formation apparatus having a configuration as shown
in FIG. 2A. Next, the ta-C:Ti film 208B was formed while inclining
the base material holder so that the angle of the A surface of the
base material 208A (denoted by "208" in FIGS. 2A to 2C) was set to
45 degrees (.phi.=45 degrees in FIG. 2B) with respect to the
emission direction of a carbon ion beam, and rotating the base
material 208A with the substrate holder in such a direction
(.theta.Y direction) that the Y-axis of FIG. 2B was used as a
rotational axis, and the sample 208 was obtained.
[0083] In this case, graphite sintered bodies containing Ti of 0 at
%, 1.0 at %, 1.25 at %, 1.50 at %, 1.8 at %, 2.15 at %, and 4.0 at
%, respectively, as targets were used as raw materials. Arc plasma
was then generated at an arc current of 80 A for each material and
the raw material was evaporated and ionized. The ta-C:Ti film 208B
was formed on the base material 208A by setting a bias voltage to
-1980 V and applying a pulse of 1500 Hz, and the sample 208 was
fabricated. Each film thickness was set to substantially 50 nm by
controlling the film formation time. The film thickness was
measured by a stylus type step profiler. The film thickness is not
limited to 50 nm, but the film thickness between 10 nm and 1,000 nm
may be selected. For example, the thickness of the ta-C:Ti film can
be set to approximately 10, 20, 30, 40, 50, 60, 70, 80, 90, 100,
200, 300, 400, 500, 600, 700, 800, 900, or 1,000 nm. Meanwhile, a
film having a Ti/C atomic ratio of 0 which is fabricated using a
pure graphite sintered body raw material having a Ti content of 0
at % is a ta-C film.
[0084] The chemical composition of each element in the ta-C:Ti film
obtained in this manner was measured. The chemical composition of
each element in the ta-C:Ti film was measured by RBS (Rutherford
backscattering spectrometry) and HFS (hydrogen forward scattering
spectrometry). The results are shown in FIG. 5.
[0085] As obvious from FIG. 5, it can be understood that a
good-quality Ti-containing tetrahedral amorphous carbon film
(ta-C:Ti film) having extremely low concentrations of O and H which
are impurities is obtained. As the Ti concentration in the raw
material increases, the Ti/C atomic ratio of the ta-C:Ti film also
increases.
[0086] In addition, a contamination acceleration test was performed
on the ta-C film and the ta-C:Ti film having a different Ti/C
atomic ratio.
[0087] In the contamination acceleration test, the base material
208A formed of plate-like Si was used, and each ta-C:Ti film 208B
was formed using a target having a different Ti/C atomic ratio as
mentioned above. In addition, the base material 208A formed of pure
Ti was also prepared by way of comparison. The sample 208 was
vertically immersed in a solution containing a topcoat component as
a contamination solution, and was contaminated for 40 hours by a
shaker. The results are shown in FIG. 3.
[0088] FIG. 3 is an exterior photograph obtained by capturing an
image of each sample after the contamination acceleration test from
above. Portions appearing to be white are precipitated contaminants
formed of a topcoat component.
[0089] The ta-C film is almost not contaminated. On the other hand,
the pure Ti base material is considerably contaminated. In the
ta-C:Ti film, it is clearly known that as the Ti/C atomic ratio
increases, the degree of contamination also increases. The area of
the white contaminated region was quantified by performing an image
process on each photograph of FIG. 3.
[0090] FIG. 4 is a diagram showing results obtained by measuring
the quantified degree of contamination and the static contact angle
of pure water with respect to the ta-C film and the ta-C:Ti film
having a different Ti/C atomic ratio.
[0091] The static contact angle of pure water is indicated by
values (.DELTA. marks) measured before irradiation with ultraviolet
rays having a wavelength of 254 nm, after the ta-C:Ti film is
exposed to the atmosphere before the contamination test is
performed, and values (O marks) measured immediately after the
irradiation with ultraviolet rays.
[0092] First, a description is given of results obtained by
measuring the static contact angle of pure water before the
irradiation with ultraviolet rays.
[0093] In a case where the Ti/C atomic ratio was 0 (zero: Ti is not
contained), that is, in a case of the ta-C film, the static contact
angle of pure water was approximately 40 degrees to 60 degrees
before the irradiation with ultraviolet rays.
[0094] On the other hand, it was found that the static contact
angle of pure water of the Ti-doped ta-C:Ti film was approximately
40 degrees to 80 degrees before the irradiation with ultraviolet
rays and the water-repellent property was high. In addition, it was
also confirmed that as the Ti/C atomic ratio became larger, the
contact angle of pure water tended to become larger. Meanwhile,
when pure Ti was also evaluated as the comparative example, it was
found that in a case of pure Ti, the static contact angle of pure
water was 70 degrees to 80 degrees and the water-repellent property
was very high.
[0095] Next, a description is given of results obtained by
measuring the static contact angle of pure water after the
irradiation with ultraviolet rays.
[0096] When the Ti/C atomic ratio was 0 (zero: Ti is not
contained), it was found that the contact angle was remarkably
reduced to approximately 28 degrees by the irradiation with
ultraviolet rays, as compared to before the irradiation with
ultraviolet rays (approximately 40 degrees to 60 degrees).
[0097] Similarly to this, it was found that it was possible to
reduce the contact angle by the irradiation with ultraviolet rays
with respect to the ta-C:Ti film. A detailed description will be
provided below.
[0098] In a sample of a region I of which the Ti/C atomic ratio
(.alpha.) was less than 0.03, the contact angle of pure water was
approximately 40 degrees to 60 degrees before the irradiation with
ultraviolet rays. On the other hand, similarly to a case where Ti
was not contained, it was found that the contact angle of pure
water was reduced to approximately 28 degrees by the irradiation
with ultraviolet rays. In the region I, even when the Ti
concentration is changed, great fluctuations in numerical values
are not observed.
[0099] Next, in a region II of which the Ti/C atomic ratio
(.alpha.) is equal to or greater than 0.03 and equal to or less
than 0.09, it was found that the contact angle of pure water was
approximately 45 degrees to 65 degrees before the irradiation with
ultraviolet rays, but became less than 28 degrees by the
irradiation with ultraviolet rays. In addition, in the region II,
it was also found that as the Ti/C atomic ratio (.alpha.)
increased, the contact angle of pure water decreased
drastically.
[0100] In addition, in a region III of which the Ti/C atomic ratio
(.alpha.) was greater than 0.09, it was found that the region had
properties resembling those of pure Ti due to the high Ti
concentration in the film, the contact angle of pure water was
approximately 50 degrees to 70 degrees before the irradiation with
ultraviolet rays, but the region was brought into a
super-hydrophilic state having a contact angle of substantially 0
(zero) due to the irradiation with ultraviolet rays.
[0101] Meanwhile, it was also confirmed that the static contact
angle of pure water for pure Ti was 70 degrees to 80 degrees and
the water-repellent property was very high before the irradiation
with ultraviolet rays, but the region was brought into a
super-hydrophilic state having a contact angle of substantially 0
due to the irradiation with ultraviolet rays.
[0102] In this manner, in the Ti-doped ta-C:Ti film, it turned out
that the contact angle of pure water greatly changed due to the
irradiation with ultraviolet rays. That is, the contact angle of
pure water decreases drastically, and the film surface has a
hydrophilic property. In addition, in the relationship with the
Ti/C atomic ratio, it was found that as compared to a tendency
before the irradiation with ultraviolet rays (as the Ti/C atomic
ratio increases, the contact angle of pure water increases), the
tendency after the irradiation with ultraviolet rays showed
entirely different behavior.
[0103] Next, the degrees of contamination of the ta-C:Ti films of
the respective regions I to III were evaluated. The degrees of
contamination were relatively quantified (standardized by the area
of the contaminated region of pure Ti) by setting the area of the
contaminated region of pure Ti to 1. The smaller numerical value
represents that the degree of contamination is low. In other words,
the smaller numerical value shows that the film is not likely to be
contaminated.
[0104] From FIG. 4, it can be understood that as the Ti/C atomic
ratio (.alpha.) increases, the quantified degree of contamination
(shown by .diamond. marks) tends to become larger, that is, to be
easily contaminated.
[0105] The region I of which the Ti/C atomic ratio (.alpha.) was
less than 0.03 had the degree of contamination of less than 0.15,
and was not likely to be contaminated. In addition, in the range of
the region I, even when the Ti concentration changed, great
fluctuations in numerical values were not observed. Next, the
region II of which the Ti/C atomic ratio (.alpha.) was equal to or
greater than 0.03 and equal to or less than 0.09 showed a sharp
increase in the degree of contamination as a became larger. In
addition, the region III of which the Ti/C atomic ratio (.alpha.)
was greater than 0.09 had properties resembling those of pure Ti
due to the high Ti concentration in the film, had a degree of
contamination of equal to or greater than 0.7, and was much more
likely to be contaminated. In addition, in the range of the region
III, even when the Ti concentration was changed, great fluctuations
in numerical values were not seen, but a tendency of saturation was
shown.
[0106] From the above, regarding the antifouling property of the
ta-C:Ti film, the degree of contamination was equal to less than
0.15 in the region I of which a was less than 0.03, and the region
was not likely to be contaminated. However, in this region, the
contact angle was large, and the hydrophilic property was not
sufficient.
[0107] On the other hand, regarding the hydrophilic property of the
ta-C:Ti film, the region III of which a was greater than 0.09 was
brought into a super-hydrophilic state where the contact angle of
pure water was 0 (zero). However, the region III had a degree of
contamination equal to or greater than 0.7, had the same level as
that of pure Ti, and was much more likely to be contaminated.
[0108] On the other hand, in the region II in which a was equal to
or greater than 0.03 and equal to or less than 0.09, it was found
that the contact angle was small, the degree of contamination was
also kept low, and both the antifouling property and the
hydrophilic property were provided. Particularly, it was found that
a sample in a region IIS in which a was equal to or greater than
0.04 and equal or less than 0.05 had an excellent balance of both
the antifouling property and the hydrophilic property, and
particularly good characteristics were shown.
[0109] A property required for the mesh surface of the liquid
immersion exposure apparatus may simply be the ability to hold
liquid immersion water, and thus a moderate hydrophilic property in
which the static contact angle of pure water is less than
approximately 30 degrees is good enough without a super-hydrophilic
property being required. Preferably, the contact angle is equal to
or less than 20 degrees. On the other hand, it is preferable that
the antifouling property be higher. In other words, it is
preferable that the surface is unlikely to be contaminated.
Consequently, it can be concluded that the ta-C:Ti film having the
Ti concentration of the region II in FIG. 4 is a ta-C:Ti film
having both the antifouling property and the hydrophilic property.
Particularly, it was clarified that the ta-C:Ti film having the Ti
concentration of the region IIS of which the Ti/C atomic ratio
(.alpha.) is equal to or greater than 0.04 and equal or less than
0.05 had excellent characteristics.
[0110] It can be understood from FIG. 5 that such a ta-C:Ti film
serving as the region IIS of which the Ti/C atomic ratio (.alpha.)
is equal to or greater than 0.04 and equal or less than 0.05 can be
fabricated by using a graphite sintered body raw material having a
Ti content of 1.25 at % or 1.5 at %.
[0111] The sp.sup.2-C/sp.sup.3-C atomic ratio of the ta-C:Ti film
fabricated using the graphite sintered body raw material having a
Ti content of 1.5 at % was measured. The atomic ratio of sp.sup.2-C
atoms to sp.sup.3-C atoms was measured by X-ray photoelectron
spectroscopy (XPS).
[0112] In addition, the ta-C:Ti film was fabricated by changing a
bias voltage. The chemical composition of each element of the
obtained ta-C:Ti film was measured. The results are shown in FIG.
6.
[0113] Meanwhile, the base material 208A formed of Si was used in
the sample 208 for chemical composition measurement. The base
material 208A formed of Ti was used in the sample 208 for stress
measurement.
[0114] From FIG. 6, it turned out that it was possible to change
the sp.sup.2-C/sp.sup.3-C atomic ratio by changing the bias
voltage.
[0115] It can be understood that the proportion (.delta.) of
sp.sup.3-C atoms in all the elements constituting the ta-C:Ti film
is equal to or less than 59 at %. The value is important. When the
sp.sup.3-C atomic ratio (.delta.) exceeds 60 at %, compressive
stress is increased, and thus an adhesion force is not able to be
secured substantially in various applications. Therefore, in order
to secure an adhesion force, the proportion of sp.sup.3-C atoms in
all the elements constituting the film can be set to be equal to or
less than 59 at %. Further, the proportion of sp.sup.3-C atoms is
preferably equal to or less than 49 at %.
[0116] Meanwhile, as the bias voltage, any voltage value between
-190 V and -3,000 V may be selected. Thereby, the ta-C:Ti film
having low compressive stress is obtained. On the other hand, when
any voltage value between floating and -150 V is selected, the
ta-C:Ti film having high compressive stress is obtained. In this
case, an adhesion force to a Ti mesh becomes weak.
[0117] In addition, as understood from FIG. 6, even when the bias
voltage is changed, the Ti/C atomic ratio in the ta-C:Ti film
remains constant with no change. On the other hand, even when an
arc current capable of changing an evaporation rate is changed, the
Ti/C atomic ratio (.alpha.) in the ta-C:Ti film remains constant
with no change. Therefore, the chemical composition and the Ti/C
atomic ratio (.alpha.) of the ta-C:Ti film can be unmistakably
controlled only by the Ti concentration in the raw material.
[0118] In the liquid immersion exposure apparatus including the
liquid immersion member constituted by a mesh member obtained by
forming the film of the region II, a continuous exposure operation
was able to be performed while moving a stage at high speed in a
state where liquid immersion water was held, and the contamination
rate of the liquid immersion member was approximately one-fifth of
that of the related art. Therefore, the frequency of stopping the
apparatus for the purpose of cleaning and exchanging the liquid
immersion member was also one-fifth of that, and thus it was
possible to provide a liquid immersion exposure apparatus having
much higher throughput than that of an apparatus of the related
art.
[0119] As described above, the functional film formed of the
ta-C:Ti film according to the embodiment of the present invention
has both good hydrophilic and antifouling properties.
[0120] Such a functional film is used, and thus it is possible to
provide a liquid immersion member, a method of manufacturing the
liquid immersion member, and an exposure apparatus, which are
capable of improving throughput, reducing the number of exposure
defects, and reducing deteriorations in productivity. Further, it
is possible to provide a device manufacturing method capable of
reducing the number of defective devices and reducing
deteriorations in productivity.
[0121] Hereinafter, the liquid immersion member and the exposure
apparatus using the functional film according to the embodiment of
the present invention will be described.
[0122] Meanwhile, in the following description, an XYZ orthogonal
coordinate system is set, and a positional relationship between
respective members will be described with reference to the XYZ
orthogonal coordinate system. A predetermined direction within the
horizontal plane is set to an X-axis direction, a direction
orthogonal to the X-axis direction within the horizontal plane is
set to a Y-axis direction, and a direction (that is, vertical
direction) perpendicular to each of the X-axis direction and the
Y-axis direction is set to a Z-axis direction. In addition,
rotational (tilting) directions around an X-axis, a Y-axis, and a
Z-axis are set to a .theta.X direction, a .theta.Y direction, and a
.theta.Z direction, respectively. In each embodiment described
later, all the base materials of a mesh member 24 (porous member)
covered with the functional film are formed of Ti.
First Embodiment
[0123] A first embodiment will be described below. FIG. 7 is a
schematic configuration diagram showing an example of an exposure
apparatus EX according to the first embodiment. In FIG. 7, the
exposure apparatus EX includes a mask stage 1 that movably holds a
mask M, a substrate stage 2 that movably holds a substrate P, a
first drive system 1D that moves the mask stage 1, a second drive
system 2D that moves the substrate stage 2, an interferometer
system 3 capable of measuring positional information of the mask
stage 1 and the substrate stage 2, an illumination system IL that
illuminates the mask M with exposure light EL, a projection optical
system PL that projects an image of a pattern of the mask M,
illuminated with the exposure light EL, onto the substrate P, and a
control apparatus 4 that controls an operation of the entire
exposure apparatus EX.
[0124] The mask M includes a reticle on which a device pattern
projected onto the substrate P is formed. The mask M includes a
transmissive mask having a predetermined pattern formed on a
transparent plate such as, for example, a glass plate using a
light-shielding film such as chromium. Meanwhile, a reflective mask
can also be used as the mask M. The substrate P is a substrate for
manufacturing a device. The substrate P includes, for example, a
base material such as a semiconductor wafer like a silicon wafer on
which a photosensitive film is formed. The photosensitive film is a
film formed of a photosensitive material (photoresist). In
addition, the substrate P may include a film other than the
photosensitive film. For example, the substrate P may include an
antireflection film, and may include a protective film (topcoat
film) that protects the photosensitive film.
[0125] The exposure apparatus EX of the present embodiment is a
liquid immersion exposure apparatus that exposes the substrate P
with the exposure light EL through liquid LQ. The exposure
apparatus EX includes a liquid immersion member 6 capable of
forming a liquid immersion space LS so that at least a portion of
an optical path K of the exposure light EL is filled with the
liquid LQ. The liquid immersion space LS is a space which is filled
with the liquid LQ. In the present embodiment, water (pure water)
is used as the liquid LQ.
[0126] In the present embodiment, the liquid immersion space LS is
formed so that the optical path K of the exposure light EL emitted
from a terminal optical element 5 which is closest to the image
plane of the projection optical system PL among a plurality of
optical elements of the projection optical system PL is filled with
the liquid LQ. The terminal optical element 5 has an emission
surface 5U for emitting the exposure light EL toward the image
plane of the projection optical system PL. The liquid immersion
space LS is formed so that the optical path K between the terminal
optical element 5 and an object disposed at a position facing the
emission surface 5U of the terminal optical element 5 is filled
with the liquid LQ. The position facing the emission surface 5U
includes an irradiation position of the exposure light EL emitted
from the emission surface 5U.
[0127] The liquid immersion member 6 is disposed in the vicinity of
the terminal optical element 5. The liquid immersion member 6 has a
lower surface 7. In the present embodiment, the object capable of
facing the emission surface 5U can face the lower surface 7. When
the surface of the object is disposed at the position facing the
emission surface 5U, at least a portion of the lower surface 7 and
the surface of the object face each other. When the emission
surface 5U and the surface of the object face each other, the
liquid LQ can be held between the emission surface 5U and the
surface of the object. In addition, when the lower surface 7 of the
liquid immersion member 6 and the surface of the object face each
other, the liquid LQ can be held between the lower surface 7 and
the surface of the object. The liquid immersion space LS is formed
by the liquid LQ held between the emission surface 5U and the lower
surface 7 on one side and the surface of the object on the other
side.
[0128] In the present embodiment, the object capable of facing the
emission surface 5U and the lower surface 7 includes an object
movable on the emission side (image plane side) of the terminal
optical element 5, and includes an object movable to the position
facing the emission surface 5U and the lower surface 7. In the
present embodiment, the object includes at least one of the
substrate stage 2 and the substrate P held by the substrate stage
2. Meanwhile, in the following, for the purpose of simplifying
description, a state where the emission surface 5U and the lower
surface 7 on one side and the surface of the substrate P on the
other side face each other will be chiefly described by way of
example. However, the same is true of a case where the emission
surface 5U and the lower surface 7 on one side and the surface of
the substrate stage 2 on the other side face each other.
[0129] In the present embodiment, the liquid immersion space LS is
formed so that a region (local region) of a portion of the surface
of the substrate P disposed at the position facing the emission
surface 5U and the lower surface 7 is covered with the liquid LQ,
and an interface (a meniscus or an edge) LG of the liquid LQ is
formed between the surface of the substrate P and the lower surface
7. That is, in the present embodiment, the exposure apparatus EX
adopts a local liquid immersion system in which the liquid
immersion space LS is formed so that a portion of a region on the
substrate P including a projection region PR of the projection
optical system PL is covered with the liquid LQ during the exposure
of the substrate P.
[0130] The illumination system IL illuminates a predetermined
illumination region IR with the exposure light EL having a uniform
illuminance distribution. The illumination system IL illuminates at
least a portion of the mask M disposed in the illumination region
IR with the exposure light EL having a uniform illuminance
distribution. As the exposure light EL emitted from the
illumination system IL, for example, emission lines (g line, h
line, and i line) emitted from a mercury lamp, far-ultraviolet
light (DUV light) such as KrF excimer laser light (having a
wavelength of 248 nm) and ArF excimer laser light (having a
wavelength of 193 nm), vacuum-ultraviolet light (VUV light) such as
F.sub.2 laser light (having a wavelength of 157 nm), and the like
are used. In the present embodiment, as the exposure light EL, ArF
excimer laser light which is ultraviolet light (far-ultraviolet
light) is used.
[0131] The mask stage 1 has a mask holding portion 1H that holds
the mask M. The mask holding portion 1H can cause the mask M to be
removed therefrom. In the present embodiment, the mask holding
portion 1H holds the mask M so that the pattern forming surface
(lower surface) of the mask M and the XY plane are substantially
parallel to each other. The first drive system 1D includes an
actuator such as a linear motor. The mask stage 1 can move within
the XY plane by the operation of the first drive system 1D in a
state where the mask M is held. In the present embodiment, the mask
stage 1 can move in three directions of the X-axis direction, the
Y-axis direction, and the .theta.Z direction in a state where the
mask M is held by the mask holding portion 1H.
[0132] The projection optical system PL irradiates a predetermined
projection region PR with the exposure light EL. The projection
optical system PL projects an image of a pattern of the mask M, at
a predetermined projection magnification, onto at least a portion
of the substrate P disposed in the projection region PR. The
plurality of optical elements of the projection optical system PL
are held by a lens barrel PK. The projection optical system PL of
the present embodiment is a reduction system of which the
projection magnification is, for example, 1/4, 1/5, 1/8 or the
like. Meanwhile, the projection optical system PL may be any of an
equalization system and a magnification system. In the present
embodiment, an optical axis AX of the projection optical system PL
is substantially parallel to the Z-axis. In addition, the
projection optical system PL may be any of a refraction system
which does not include a reflective optical element, a reflection
system which does not include a refractive optical element, and a
reflection and refraction system which includes a reflective
optical element and a refractive optical element. In addition, the
projection optical system PL may form any of an inverted image and
an erected image.
[0133] The substrate stage 2 can move on a guide surface 8G of a
base member 8. In the present embodiment, the guide surface 8G is
substantially parallel to the XY plane. The substrate stage 2 can
move within the XY plane along the guide surface 8G in a state
where the substrate P is held.
[0134] The substrate stage 2 has a substrate holding portion 2H
that holds the substrate P. The substrate holding portion 2H can
releasably hold the substrate P. In the present embodiment, the
substrate holding portion 2H holds the substrate P so that the
exposure surface (surface) of the substrate P and the XY plane are
substantially parallel to each other. The second drive system 2D
includes an actuator such as a linear motor. The substrate stage 2
can move within the XY plane by the operation of the second drive
system 2D in a state where the substrate P is held. In the present
embodiment, the substrate stage 2 can move in six directions of the
X-axis direction, the Y-axis direction, the Z-axis direction, the
.theta.X direction, the .theta.Y direction, and the .theta.Z
direction in a state where the substrate P is held by the substrate
holding portion 2H.
[0135] The substrate stage 2 has an upper surface 2T disposed in
the vicinity of the substrate holding portion 2H. In the present
embodiment, the upper surface 2T is flat, and is substantially
parallel to the XY plane. In addition, the substrate stage 2 has a
concave portion 2C. The substrate holding portion 2H is disposed
inside the concave portion 2C. In the present embodiment, the upper
surface 2T and the surface of the substrate P held by the substrate
holding portion 2H are disposed in substantially the same plane
(are flush with each other).
[0136] The interferometer system 3 measures positional information
of the mask stage 1 and the substrate stage 2 in the XY plane. The
interferometer system 3 includes a laser interferometer 3A that
measures the positional information of the mask stage 1 in the XY
plane and a laser interferometer 3B that measures the positional
information of the substrate stage 2 in the XY plane. The laser
interferometer 3A irradiates a reflective surface 1R disposed on
the mask stage 1 with measurement light, and measures the
positional information of the mask stage 1 (mask M) regarding the
X-axis direction, the Y-axis direction, and the .theta.Z direction,
using the measurement light through the reflective surface 1R. The
laser interferometer 3B irradiates a reflective surface 2R disposed
on the substrate stage 2 with measurement light, and measures the
positional information of the substrate stage 2 (substrate P)
regarding the X-axis direction, the Y-axis direction, and the
.theta.Z direction, using the measurement light through the
reflective surface 2R.
[0137] In addition, in the present embodiment, a focusing and
leveling detection system (not shown in the drawing) that detects
positional information of the surface of the substrate P held by
the substrate stage 2 is disposed. The focusing and leveling
detection system detects the positional information of the surface
of the substrate P regarding the Z-axis direction, the .theta.X
direction, and the .theta.Y direction.
[0138] When the substrate P is exposed, the positional information
of the mask stage 1 is measured by the laser interferometer 3A, and
the positional information of the substrate stage 2 is measured by
the laser interferometer 3B. The control apparatus 4 brings the
first drive system 1D into operation on the basis of the
measurement result of the laser interferometer 3A, and executes
position control of the mask M held by the mask stage 1. In
addition, the control apparatus 4 brings the second drive system 2D
into operation on the basis of the measurement result of the laser
interferometer 3B and the detection result of the focusing and
leveling detection system, and executes position control of the
substrate P held by the substrate stage 2.
[0139] The exposure apparatus EX of the present embodiment is a
scanning-type exposure apparatus (so-called scanning stepper) that
projects an image of the pattern of the mask M onto the substrate P
while synchronously moving the mask M and the substrate P in a
predetermined scanning direction. When the substrate P is exposed,
the control apparatus 4 controls the mask stage 1 and the substrate
stage 2, and moves the mask M and the substrate P in a
predetermined scanning direction within the XY plane intersecting
the optical path (optical axis AX) of the exposure light EL. In the
present embodiment, the scanning direction (synchronous movement
direction) of the substrate P is set to the Y-axis direction, and
the scanning direction (synchronous movement direction) of the mask
M is also set to the Y-axis direction. The control apparatus 4
moves the substrate P in the Y-axis direction with respect to the
projection region PR of the projection optical system PL, and moves
the mask M in the Y-axis direction with respect to the illumination
region IR of the illumination system IL in synchronization with the
movement of the substrate P in the Y-axis direction, while
irradiating the substrate P with the exposure light EL through the
projection optical system PL and the liquid LQ of the liquid
immersion space LS on the substrate P. Thereby, the substrate P is
exposed with the exposure light EL, and the image of the pattern of
the mask M is projected onto the substrate P.
[0140] Next, an example of the liquid immersion member 6 according
to the present embodiment and a method of manufacturing the liquid
immersion member 6 will be described with reference to the
accompanying drawings. FIG. 8 is a cross-sectional side view
showing the vicinity of the liquid immersion member 6.
[0141] Meanwhile, in the following description, a case where the
surface of the substrate P is disposed at the position facing the
emission surface 5U of the terminal optical element 5 and the lower
surface 7 of the liquid immersion member 6 is described by way of
example. However, as described above, objects, such as the upper
surface 2T of the substrate stage 2, other than the substrate P can
also be disposed at the position facing the emission surface 5U of
the terminal optical element 5 and the lower surface 7 of the
liquid immersion member 6. In addition, in the following
description, the emission surface 5U of the terminal optical
element 5 may be referred to as the lower surface 5U of the
terminal optical element 5.
[0142] The liquid immersion member 6 can form the liquid immersion
space LS so that the optical path K of the exposure light EL
between the terminal optical element 5 and the substrate P is
filled with the liquid LQ. The liquid immersion member 6 is an
annular member, and is disposed so as to surround the optical path
K of the exposure light EL. In the present embodiment, the liquid
immersion member 6 includes a side plate portion 12 disposed in the
vicinity of the terminal optical element 5, and a lower plate
portion 13 of which at least a portion is disposed between the
lower surface 5U of the terminal optical element 5 and the surface
of the substrate P, in the Z-axis direction.
[0143] Meanwhile, the liquid immersion member 6 may be not an
annular member. For example, the liquid immersion member 6 may be
disposed in a portion of the vicinity of the optical path K of the
exposure light EL emitted from the terminal optical element 5 and
the emission surface 5U.
[0144] The side plate portion 12 faces an outer circumferential
surface 14 of the terminal optical element 5, and a predetermined
gap is formed between the side plate portion and an inner
circumferential surface 15 which is formed along the outer
circumferential surface.
[0145] The lower plate portion 13 has an opening 16 in the center
thereof. The exposure light EL emitted from the lower surface 5U
can pass through the opening 16. For example, the exposure light EL
emitted from the lower surface 5U during the exposure of the
substrate P passes through the opening 16, and the surface of the
substrate P is irradiated with the exposure light through the
liquid LQ. In the present embodiment, the exposure light EL in the
opening 16 is long and rectangular (slit-shaped) in cross-sectional
shape in the X-axis direction. The opening 16 has a shape according
to the cross-sectional shape of the exposure light EL. That is, the
opening 16 in the XY plane is rectangular (slit-shaped) in shape.
In addition, the cross-sectional shape of the exposure light EL in
the opening 16 and the shape of the projection region PR of the
projection optical system PL in the substrate P are substantially
the same as each other.
[0146] In addition, the liquid immersion member 6 includes a supply
port 31 that supplies the liquid LQ used to form the liquid
immersion space LS, and a recovery port 32 that suctions and
recovers at least a portion of the liquid LQ on the substrate
P.
[0147] In the present embodiment, the lower plate portion 13 of the
liquid immersion member 6 is disposed in the vicinity of the
optical path of the exposure light EL. An upper surface 33 of the
lower plate portion 13 is directed toward the +Z-axis direction,
and the upper surface 33 and the lower surface 5U face each other
with a predetermined gap interposed therebetween. The supply port
31 can supply the liquid LQ to an internal space 34 between the
lower surface 5U and the upper surface 33. In the present
embodiment, the supply port 31 is provided on each of both sides in
the Y-axis direction with respect to the optical path K.
[0148] The supply port 31 is connected to a liquid supply device 35
through a channel 36. The liquid supply device 35 can send out the
liquid LQ which is cleaned and temperature-regulated. The channel
36 includes a supply channel 36A formed inside the liquid immersion
member 6, and a channel 36B formed by a supply tube that connects
the supply channel 36A to the liquid supply device 35. The liquid
LQ sent out from the liquid supply device 35 is supplied to the
supply port 31 through the channel 36. The supply port 31 supplies
the liquid LQ from the liquid supply device 35 to the optical path
K.
[0149] The recovery port 32 is connected to a liquid recovery
device 37 through a channel 38. The liquid recovery device 37
includes a vacuum system, and can suction and recover the liquid
LQ. The channel 38 includes a recovery channel 38A formed inside
the liquid immersion member 6, and a channel 38B formed by a
recovery tube that connects the recovery channel 38A to the liquid
recovery device 37. By the liquid recovery device 37 being
operated, the liquid LQ recovered from the recovery port 32 is
recovered to the liquid recovery device 37 through the channel
38.
[0150] In the present embodiment, the mesh member 24 (porous
member) is disposed in the recovery port 32 of the liquid immersion
member 6. At least a portion of the liquid LQ between the substrate
P and the mesh member is recovered through the recovery port 32
(mesh member 24). The lower surface 7 of the liquid immersion
member 6 includes a land surface 21 disposed in the vicinity of the
optical path K of the exposure light EL, and a liquid recovery
region 22 provided outside the land surface 21 with respect to the
optical path K of the exposure light EL. In the present embodiment,
the liquid recovery region 22 includes the surface (lower surface)
of the mesh member 24.
[0151] In the following description, the liquid recovery region 22
may be referred to as the recovery surface 22.
[0152] The land surface 21 can hold the liquid LQ between the
surface of the substrate P and the land surface. In the present
embodiment, the land surface 21 is directed toward the -Z-axis
direction, and includes the lower surface of the lower plate
portion 13. The land surface 21 is disposed in the vicinity of the
opening 16. In the present embodiment, the land surface 21 is flat,
and is substantially parallel to the surface (XY plane) of the
substrate P. In the present embodiment, the land surface 21 in the
XY plane is rectangular in outer shape, but may have other shapes,
for example, a circular shape.
[0153] The recovery surface 22 can recover at least a portion of
the liquid LQ between the lower surface 5U and the lower surface 7
on one side and the surface of the substrate P on the other side.
The recovery surface 22 is disposed on each of both sides in the
Y-axis direction (scanning direction) with respect to the optical
path K of the exposure light EL. In the present embodiment, the
recovery surface 22 is disposed in the vicinity of the optical path
K of the exposure light EL. That is, the recovery surface 22 is
disposed in an annular rectangular shape in the vicinity of the
land surface 21. In addition, in the present embodiment, the land
surface 21 and the recovery surface 22 are disposed in
substantially the same plane (are flush with each other).
Meanwhile, the land surface 21 and the recovery surface may not be
disposed in the same plane.
[0154] The recovery surface 22 includes the surface (lower surface)
of the mesh member 24, and recovers the liquid LQ which is in
contact with the recovery surface 22 through holes of the mesh
member 24.
[0155] FIG. 9A is an enlarged plan view showing the mesh member 24
of the present embodiment, and FIG. 9B is a cross-sectional view
taken along an arrow of line A-A in FIG. 9A. As shown in FIGS. 9A
and 9B, in the present embodiment, the mesh member 24 is a thin
plate member in which a plurality of small holes 24H are formed.
The mesh member 24 is a member in which the plurality of holes 24H
are formed by processing a thin plate member, and is also called a
mesh plate.
[0156] The mesh member 24 has a lower surface 24B facing the
surface of the substrate P, and an upper surface 24A located on the
opposite side to the lower surface 24B. The lower surface 24B has
the recovery surface 22 formed thereon. The upper surface 24A comes
into contact with the recovery channel 38A. The holes 24H are
formed between the upper surface 24A and the lower surface 24B.
That is, the holes 24H are formed so as to penetrate through the
upper surface 24A and the lower surface 24B. In the following
description, the hole 24H may be referred to as the through-hole
24H.
[0157] In the present embodiment, the upper surface 24A and the
lower surface 24B are substantially parallel to each other. That
is, in the present embodiment, the upper surface 24A and the lower
surface 24B are substantially parallel to the surface of the
substrate P (XY plane). In the present embodiment, the through-hole
24H penetrates between the upper surface 24A and the lower surface
24B in substantially parallel to the Z-axis direction. The liquid
LQ can flow through the through-hole 24H. The liquid LQ on the
substrate P is drawn into the recovery channel 38A through the
through-hole 24H.
[0158] In the present embodiment, the through-hole (opening) 24H in
the XY plane is circular in shape. In addition, the size of the
through-hole (opening) 24H in the upper surface 24A and the size of
the through-hole (opening) 24H in the lower surface 24B are
substantially equal to each other. Meanwhile, the shape of the
through-hole 24H in the XY plane may be shapes other than a
circular shape, for example, polygonal shapes such as a pentagonal
shape and a hexagonal shape. In addition, the diameter or shape of
the through-hole (opening) 24H in the upper surface 24A may be
different from the diameter or shape of the through-hole (opening)
24H in the lower surface 24B.
[0159] In the present embodiment, the control apparatus 4 brings
the liquid recovery device 37 including the vacuum system into
operation, and generates a pressure difference between the upper
surface 24A and the lower surface 24B of the mesh member 24, to
thereby recover the liquid LQ from the mesh member 24 (recovery
surface 22). The liquid LQ recovered from the recovery surface 22
is recovered to the liquid recovery device 37 through the channel
38.
[0160] There is the possibility of substances (for example, organic
substances such as a resist and a topcoat) eluted from the
substrate P into the liquid LQ, during the exposure of the
substrate P, being reprecipitated on the surface of the member
constituting the liquid immersion member 6. When precipitates are
generated in a region which is in contact with the liquid LQ of the
liquid immersion member 6, there is the possibility of the
precipitates being peeled off by a liquid flow (water flow) and
being attached to the substrate P.
[0161] In the present embodiment, the functional film as described
above, that is, the Ti-doped tetrahedral amorphous carbon film
(ta-C:Ti film) is formed in at least a portion of the region which
is in contact with the liquid LQ of the liquid immersion member 6.
The ta-C:Ti film is chemically inactive, and has a property
excellent in an adhesion force to a ground (base material) on which
the film is to be formed. In addition, the ta-C:Ti film of the
present embodiment has both a hydrophilic property and an
antifouling property.
[0162] For this reason, in the present embodiment, in a region of
the liquid immersion member 6 where the ta-C:Ti film is formed,
even when a chemical affinity with a resist component or a topcoat
component eluted into the adjoining liquid LQ is low, and the
wetting and drying of the liquid LQ are repeated, the adhesion and
reprecipitation of the resist component or the topcoat component in
the liquid LQ are not likely to occur. Therefore, it is possible to
effectively reduce the number of exposure defects due to the
reprecipitation of the topcoat component on the surface of the
liquid immersion member 6 in the region which is in contact with
the liquid LQ, the peeling-off of the reprecipitates, and the
attachment thereof to the surface of the substrate P during
exposure. It is thereby possible to improve throughput.
[0163] In the present embodiment, a portion having the ta-C:Ti film
formed on the surface of the liquid immersion member 6 is not
particularly limited as long as it is a region which comes into
contact with the liquid LQ. The portion may have only to be formed
on at least a portion of a region which comes into contact with the
liquid LQ of the liquid recovery region 22 (recovery port 32 and
mesh member 24), the land surface 21, the lower plate portion 13,
and the side plate portion 12. The ta-C:Ti film can be configured
to be formed in a region in which the reprecipitation of the resist
component or the topcoat component has a tendency to occur, and a
region which has a tendency to be influenced by the liquid flow of
the liquid LQ, among these members constituting the liquid
immersion member 6.
[0164] With such a configuration, it is possible to suppress the
reprecipitation of the resist component or the topcoat component,
and to suppress the peeling-off of the reprecipitates and the
adhesion thereof to the substrate P. The region in which the
reprecipitation of the resist component or the topcoat component
has a tendency to occur and the region which has a tendency to be
influenced by the liquid flow of the liquid LQ include particularly
the recovery port 32 (mesh member 24) of the liquid recovery region
22. The ta-C:Ti film is formed on the surface of the recovery port
32 (mesh member 24), and thus it is possible to effectively
suppress the reprecipitation of the resist component or the topcoat
component, the peeling-off of the reprecipitates, and the adhesion
of the reprecipitates to the substrate P, and to reduce the number
of exposure defects.
[0165] In addition, according to the present embodiment, since the
reprecipitation of the resist component or the topcoat component on
the liquid immersion member 6 is not likely to occur, it is
possible to reduce the frequency of cleaning of the liquid
immersion member 6. In addition, the ta-C:Ti film is formed on the
surface of the liquid immersion member 6. Thereby, even when the
reprecipitation of the resist component or the topcoat component is
caused by a repeated exposure process, a low chemical affinity
between the surface of the liquid immersion member 6 and the resist
component or the topcoat component gives rise to a weak adhesion
force therebetween, and thus it is possible to shorten the cleaning
time of the reprecipitates. Therefore, according to the present
embodiment, since the frequency and time of the cleaning work can
be reduced, it is possible to shorten the downtime of the liquid
immersion exposure apparatus, and to reduce deteriorations in
productivity.
[0166] In the present embodiment, the base material of the liquid
immersion member 6 is made of Ti. Thereby, the internal stress of
the ta-C:Ti film is kept low, and thus it is possible to secure a
sufficient adhesion force to the base material of the liquid
immersion member 6. Meanwhile, the base material of the liquid
immersion member 6 may be corrosive-resistant metal products or
ceramic products made of stainless steel, Al or the like.
[0167] The thickness of the ta-C:Ti film formed in at least a
portion of the liquid immersion member 6 is not particularly
limited, but can be set to be equal to or greater than 5 nm, and is
preferably 10 nm to 1 .mu.m. As the ta-C:Ti film, a film having
hydrogen scarcely contained therein can be used.
[0168] FIG. 9C is a cross-sectional view taken along an arrow
showing an example when the ta-C:Ti film is formed in the mesh
member 24 of the recovery port 32 in the present embodiment.
[0169] In the present embodiment, as shown in FIG. 9C, the ta-C:Ti
film is formed on the lower surface 24B, the inner wall surface of
the through-hole 24H, and the upper surface 24A. The thicknesses of
the ta-C:Ti film on the lower surface 24B, the inner wall surface
of the through-hole 24H, and the upper surface 24A are not
particularly limited. A continuous ta-C:Ti film may be formed
without being formed in an island shape in order to obtain an
effect obtained by forming a chemically inactive ta-C:Ti film, and
the thicknesses thereof can be set to be equal to or greater than 5
nm, preferably 10 nm to 1 .mu.m. For example, the thicknesses of
the ta-C:Ti film can be set to approximately 10, 20, 30, 40, 50,
60, 70, 80, 90, 100, 200, 300, 400, 500, 600, 700, 800, 900, or
1,000 nm. The thicknesses of the ta-C:Ti film formed on the lower
surface 24B, the upper surface 24A, and the inner wall surface of
the through-hole 24H may be substantially the same as or different
from each other. The thickness of the ta-C:Ti film on the inner
wall surface of the through-hole 24H can be adjusted by the hole
diameter of the through-hole 24H. Meanwhile, the ta-C:Ti film may
be formed on only the lower surface 24B and/or the upper surface
24A.
[0170] In the present embodiment, as shown in FIG. 9C, when the
ta-C:Ti film is formed in the mesh member 24 of the recovery port
32, the film formation can be performed using an FCVA method which
is capable of performing uniform film formation even on the inner
wall surface of the fine through-hole 24H.
[0171] As shown in FIG. 9C, a description will be given of a method
of forming the ta-C:Ti film on the upper surface 24A, the lower
surface 24B, and the inner wall surface of the through-hole 24H of
the mesh member 24 using an FCVA method.
[0172] First, in the FCVA apparatus 200 shown in FIG. 2A, the mesh
member 24 is installed on the substrate holder 207 so that the
upper surface 24A of the mesh member 24 faces the flight direction
(Y-axis direction) of C.sup.+ ion particles. Next, as shown in FIG.
2B, by operating the substrate holder 207 through driving means
which is not shown in the drawing, the mesh member 24 is rotated in
the .theta.X direction, and is inclined so that the plane of the
upper surface 24A is set to have an angle .PHI. with respect to the
Y-axis which is the flight direction of C.sup.+ ions. Further, the
ta-C:Ti film is formed while rotating the mesh member in the
.theta.Y direction through driving means (not shown in the drawing)
of the substrate holder 207. By installing and rotating the mesh
member 24 in such a manner and performing film formation, the
C.sup.+ ions reach not only the upper surface 24A of the mesh
member 24, but also the inner wall surface of the through-hole 24H,
thereby allowing the ta-C:Ti film to be formed. Meanwhile, the tilt
angle .PHI. of the plane of the upper surface 24A of the mesh
member 24 with respect to the Y-axis (flight direction of C.sup.+
ions) is not particularly limited as long as it is an angle at
which the C.sup.+ ions reach the inside of the through-hole 24H of
the mesh member 24 and the ta-C:Ti film can be formed on the inner
wall surface of the through-hole 24H. For example, the tilt angle
can be set to 45 degrees.
[0173] After the ta-C:Ti film is formed on the upper surface 24A
side of the mesh member 24, the mesh member 24 is removed from the
substrate holder 207, and the mesh member 24 having one surface
(upper surface 24A) on which the film is formed is installed on the
substrate holder 207 so that the lower surface 24B faces the flight
direction (Y-axis direction) of C.sup.+ ion particles. Next, the
ta-C:Ti film is formed on the lower surface 24B side of the mesh
member 24 in the same procedure as that of the aforementioned film
formation method of the upper surface 24A side while rotating the
mesh member at the tilt angle .PHI. in the .theta.Y direction. The
tilt angle .PHI. of the plane of the lower surface 24B with respect
to the Y-axis when the ta-C:Ti film is formed on the lower surface
24B side of the mesh member 24 can be set to the same as the tilt
angle .PHI. of the plane of the lower surface 24A with respect to
the Y-axis when film formation is performed on the upper surface
24A side. By installing the mesh member 24 and performing film
formation so that the tilt angle .PHI. during the film formation on
the upper surface 24A side and the tilt angle .PHI. during the film
formation of the lower surface 24B side are the same as each other,
it is possible to achieve the uniformity of the thickness of the
ta-C:Ti film formed on the inner wall surface of the through-hole
24H. The ta-C:Ti film is formed on the upper surface 24A, the lower
surface 24B, and the inner wall surface of the through-hole 24H of
the mesh member 24 using the above-mentioned method, and thus it is
possible to manufacture the liquid immersion member 6 according to
the present embodiment.
[0174] In the liquid immersion member 6 of the present embodiment,
a region having a ta-C:Ti film formed on the surface thereof has a
liquid-repellent property, but at least a portion of the ta-C:Ti
film can be set to have a lyophilic property in order to hold the
liquid LQ to form the liquid immersion space LS, and supply and
recover the liquid LQ smoothly. Meanwhile, in the present
embodiment, the term "liquid-repellent property" indicates that a
contact angle when pure water is dropped on the surface exceeds 50
degrees, and the term "lyophilic property" indicates that a contact
angle when pure water is dropped on the surface is equal to or less
than 50 degrees.
[0175] The change of the region having the ta-C:Ti film of the
liquid immersion member 6 formed therein from a liquid-repellent
property to a lyophilic property can be performed by irradiating a
region desired to be set to have a lyophilic property in the region
having the ta-C:Ti film formed therein, with ultraviolet rays in
the atmosphere. When the ta-C:Ti film is set to have a hydrophilic
property, ultraviolet rays having a wavelength of 254 nm can be
used.
[0176] In addition, the hydrophilic property may deteriorate due to
contaminants (resist component or topcoat component) attached to
the surface of the ta-C:Ti film, but the lyophilic property can be
reinstated by irradiation with ultraviolet rays.
[0177] In this case, ultraviolet rays having a wavelength of 254 nm
can also be used.
[0178] As described above, according to the liquid immersion member
of the present embodiment, the ta-C:Ti film is formed in at least a
portion of the region which comes into contact with the liquid LQ
of the liquid immersion member 6. Thereby, in the region having the
ta-C:Ti film formed therein, even when a chemical affinity with the
resist component or the topcoat component eluted into the adjoining
liquid LQ is low, and the wetting and drying of the liquid LQ are
repeated, the adhesion and reprecipitation of the resist component
or the topcoat component in the liquid LQ are not likely to occur.
Therefore, it is possible to effectively reduce the number of
exposure defects due to the reprecipitation of the resist component
or the topcoat component on the surface of the liquid immersion
member 6 in the region which is in contact with the liquid LQ, the
peeling-off of the reprecipitates, and the attachment thereof to
the surface of the substrate P during exposure.
[0179] In addition, according to the liquid immersion member of the
present embodiment, since the reprecipitation of the resist
component or the topcoat component on the liquid immersion member 6
is not likely to occur, it is possible to reduce the frequency of
cleaning work of the liquid immersion member 6. In addition, the
ta-C:Ti film is formed on the surface of the liquid immersion
member 6. Thereby, even when the reprecipitation of the resist
component or the topcoat component is caused by a repeated exposure
process, a low chemical affinity between the surface of the liquid
immersion member 6 and the resist component or the topcoat
component can cause these components to be dissolved and washed by
a water flow, and a weak adhesion force therebetween can also cause
the cleaning work time of the reprecipitates to be shortened.
Therefore, according to the present embodiment, since the frequency
and time of the cleaning work can be reduced, it is possible to
shorten the downtime of the liquid immersion exposure apparatus,
and to reduce deteriorations in productivity.
[0180] Further, according to the method of manufacturing the liquid
immersion member of the present embodiment, it is possible to
effectively reduce the number of exposure defects, and to provide a
liquid immersion member capable of reducing deteriorations in
productivity by reducing the frequency and time of cleaning
work.
Second Embodiment
[0181] Next, a second embodiment will be described. In the
following description, configuration portions which are the same as
or equivalent to those of the above-mentioned embodiment are
denoted by the same reference numerals and signs, and thus the
description thereof will be simplified or omitted.
[0182] FIG. 10 is a cross-sectional side view showing a portion of
a liquid immersion member 6B according to the second embodiment. As
shown in FIG. 10, the lower surface 7 of the liquid immersion
member 6B is constituted by a first land surface 51, and a second
land surface 52 provided on the outer circumference of the first
land surface, and the first land surface 51 and the second land
surface 52 are disposed in substantially the same plane (are flush
with each other). The supply channel 36A is formed by the side
plate portion 12 provided facing the outer circumferential surface
14 of the terminal optical element 5, and an outer circumferential
surface 57. A recovery port 53 includes the surface of a mesh
member 54, and is disposed so as to face the outer circumferential
surface 57 without facing the substrate P. In the liquid immersion
member 6B of the present embodiment, the liquid LQ having flowed
into a void 56 through a first opening 55 formed between the first
land surface 51 and the second land surface 52 is suctioned and
recovered through the mesh member 54 of the recovery port 53.
Meanwhile, in the present embodiment, the liquid immersion member
6B having a configuration as disclosed in Japanese Unexamined
Patent Application, First Publication No. 2008-182241 may be
used.
[0183] In the present embodiment, among configuration members of
the liquid immersion member 6B, regions having the ta-C:Ti film
formed on the surfaces thereof include configuration members of
regions which come into contact with the liquid LQ, as is the case
with the first embodiment. The configuration members are, for
example, the recovery port 53, the mesh member 54, the first land
surface 51, the second land surface 52, and the outer
circumferential surface 57. Above all, it is preferable that the
ta-C:Ti film be formed on the second land surface 52 which comes
into contact with an interface LG of the liquid LQ, and the mesh
member 54 which is the recovery port 53 that recovers the liquid
LQ. Meanwhile, a configuration of the mesh member 54 and a method
of forming the ta-C:Ti film on the mesh member 54 are the same as
those in the first embodiment.
[0184] In the present embodiment, since the reprecipitation of the
resist component or the topcoat component in the liquid LQ can also
be suppressed, it is possible to reduce the number of exposure
defects caused by the adhesion of the reprecipitates to the
substrate P due to the peeling-off thereof. In addition, since the
frequency of cleaning processes can be reduced by suppressing the
reprecipitation of the resist component or the topcoat component,
it is possible to reduce deteriorations in productivity.
Third Embodiment
[0185] Next, a third embodiment will be described. In the following
description, configuration portions which are the same as or
equivalent to those of the above-mentioned embodiment are denoted
by the same reference numerals and signs, and thus the description
thereof will be simplified or omitted.
[0186] FIG. 11 is a cross-sectional side view showing a portion of
a liquid immersion member 6C according to the third embodiment. As
shown in FIG. 11, in the liquid immersion member 6C, a supply
channel 61H formed by a supply member 61 installed around the
terminal optical element 5 is configured such that a supply port 62
faces the substrate P. A recovery channel 63H formed on the outer
circumference of the supply member 61 by a recovery member 63 is
configured such that a recovery port 64 faces the substrate P. A
trap member 65 is installed on the outer circumference of the
recovery member 63. A trap surface 66 is a surface (that is a lower
surface) of the trap member 65 which is directed toward the
substrate P side, and is inclined with respect to the horizontal
plane as shown in FIG. 6. In the liquid immersion member 6C of the
present embodiment, the liquid LQ supplied from the supply port 62
to the substrate P in a substantially vertical direction to the
substrate surface is supplied so as to be wet and spread between
the lower surface 5U of the terminal optical element 5 and the
substrate P. In addition, the liquid LQ of the liquid immersion
space LS is suctioned and recovered by the recovery port 64 in a
substantially vertical direction from the substrate surface.
Meanwhile, in the present embodiment, the liquid immersion member
6C having a configuration as disclosed in Japanese Unexamined
Patent Application, First Publication No. 2005-109426 may be
used.
[0187] In the present embodiment, among configuration members of
the liquid immersion member 6C, regions having the ta-C:Ti film
formed on the surfaces thereof include configuration members of
regions which come into contact with the liquid LQ, as is the case
with the first embodiment. The configuration members may be any of
the supply member 61, the recovery member 63, and the trap member
65 (trap surface 66).
[0188] In the present embodiment, since the reprecipitation of the
resist component or the topcoat component in the liquid LQ can also
be suppressed, it is possible to reduce the number of exposure
defects caused by the adhesion of the reprecipitates to the
substrate P due to the peeling-off thereof. In addition, since the
frequency of cleaning processes can be reduced by suppressing the
reprecipitation of the resist component or the topcoat component,
it is possible to reduce deteriorations in productivity.
Fourth Embodiment
[0189] Next, a fourth embodiment will be described. In the
following description, configuration portions which are the same as
or equivalent to those of the above-mentioned embodiment are
denoted by the same reference numerals and signs, and thus the
description thereof will be simplified or omitted.
[0190] FIG. 12 is a cross-sectional side view showing a portion of
a liquid immersion member 6D according to a fourth embodiment. As
shown in FIG. 12, in the liquid immersion member 6D, a pressure
regulating recovery channel 71A, a pressure regulating supply
channel 72A, a supply channel 73A, a recovery channel 74A, and an
auxiliary recovery channel 75A are formed in this order from the
inner circumferential side of the liquid immersion member 6D toward
the outer circumferential side in the vicinity of the terminal
optical element 5. On the lower surface 7 of the liquid immersion
member 6D, a pressure regulating recovery port 71B, a pressure
regulating supply port 72B, a supply port 73B, a recovery port 74B,
and an auxiliary recovery port 75B are formed in this order from
the inner circumferential side of the liquid immersion member 6D
toward the outer circumferential side in the vicinity of the
terminal optical element 5 so as to face the substrate P.
[0191] In the liquid immersion member 6D of the present embodiment,
the liquid LQ supplied from the supply port 73B is wet and spread
on the substrate P, to form a liquid immersion region LS. The
liquid LQ of the liquid immersion region LS is suctioned and
recovered from the recovery port 74B. When the liquid LQ of the
liquid immersion region LS on the substrate P fails to be recovered
in the recovery port 74B, the liquid which has not been recovered
flows outside the recovery port 74B, but can be recovered through
the auxiliary recovery port 75B. In addition, during the exposure
of the substrate P, the liquid LQ of the liquid immersion space LS
is recovered from the pressure regulating recovery port 71B, or the
liquid LQ is supplied from the pressure regulating supply port 72B
to the liquid immersion space LS, thereby allowing the liquid
immersion region LS to be controlled to a desired shape and
pressure. Meanwhile, in the present embodiment, the liquid
immersion member 6D having a configuration as disclosed in Japanese
Unexamined Patent Application, First Publication No. 2005-223315
may be used.
[0192] In the present embodiment, among configuration members of
the liquid immersion member 6D, regions having the ta-C:Ti film
formed on the surfaces thereof include configuration members
disposed in regions which come into contact with the liquid LQ, as
is the case with the first embodiment.
[0193] In the present embodiment, since the reprecipitation of the
resist component or the topcoat component in the liquid LQ can also
be suppressed, it is possible to reduce the number of exposure
defects caused by the adhesion of the reprecipitates to the
substrate P due to the peeling-off thereof. In addition, since the
frequency of cleaning processes can be reduced by suppressing the
reprecipitation of the resist component or the topcoat component,
it is possible to reduce deteriorations in productivity.
Fifth Embodiment
[0194] Next, a fifth embodiment will be described. In the following
description, configuration portions which are the same as or
equivalent to those of the above-mentioned embodiment are denoted
by the same reference numerals and signs, and thus the description
thereof will be simplified or omitted.
[0195] FIG. 13 is a cross-sectional side view showing a portion of
a liquid immersion member 6E according to the fifth embodiment. As
shown in FIG. 13, in the liquid immersion member 6E, a gap 81 is
defined between a wall 82a and a wall 83a, and a separation chamber
84 provided continuously with the gap 81 is included. The liquid LQ
is introduced into the separation chamber 84 through the gap 81.
Liquid and gas are separated by the separation chamber 84.
[0196] A gas recovery path 85 and a liquid recovery path 87 are
provided continuously with the separation chamber 84. The gas
separated by the separation chamber 84 is recovered from the gas
recovery path 85 through a film 86. The separated liquid is
recovered from the liquid recovery path 87.
[0197] In the present embodiment, among configuration members of
the liquid immersion member 6E, regions having the ta-C:Ti film
formed on the surfaces thereof include configuration members
disposed in regions which come into contact with the liquid LQ, as
is the case with the first embodiment.
[0198] Particularly, in the present embodiment, it is preferable
that a mesh member 89 having the ta-C:Ti film formed therein be
disposed in an inlet portion of the liquid recovery path 87.
[0199] In the present embodiment, since the reprecipitation of the
resist component or the topcoat component in the liquid LQ can also
be suppressed, it is possible to reduce the number of exposure
defects caused by the adhesion of the reprecipitates to the
substrate P due to the peeling-off thereof. In addition, since the
frequency of cleaning processes can be reduced by suppressing the
reprecipitation of the resist component or the topcoat component,
it is possible to reduce deteriorations in productivity.
Sixth Embodiment
[0200] Next, a sixth embodiment will be described. In the following
description, configuration portions which are the same as or
equivalent to those of the above-mentioned embodiment are denoted
by the same reference numerals and signs, and thus the description
thereof will be simplified or omitted.
[0201] FIG. 14 is a cross-sectional side view showing an example of
a liquid immersion member 103 according to the sixth embodiment,
FIG. 15 is a diagram when the liquid immersion member 103 is seen
from the upper side (+Z side), FIG. 16 is a diagram when the liquid
immersion member 103 is seen from the lower side (-Z side), and
FIG. 17 is an enlarged view showing a portion of FIG. 14.
[0202] In the present embodiment, the liquid immersion member 103
includes a plate portion 131 of which at least a portion is
disposed so as to face an emission surface 107, a main body portion
132 of which at least a portion is disposed so as to face a lateral
side 108F of a terminal optical element 108, and a channel forming
member 133. In the present embodiment, the plate portion 131 and
the main body portion 132 are formed integrally with each other. In
the present embodiment, the channel forming member 133 is different
from the plate portion 131 and the main body portion 132. In the
present embodiment, the channel forming member 133 is supported by
the main body portion 132. Meanwhile, the channel forming member
133, the plate portion 131 and the main body portion 132 may be
formed integrally with each other.
[0203] Meanwhile, the lateral side 108F is disposed in the vicinity
of the emission surface 107. In the present embodiment, the lateral
side 108F is inclined upward toward the outside with respect to a
radial direction for the optical path K. Meanwhile, the radial
direction for the optical path K includes a radial direction for
the optical axis AX of the projection optical system PL, and
includes a direction perpendicular to the Z-axis.
[0204] The liquid immersion member 103 has an opening 115 at a
position facing the emission surface 107. The exposure light EL
emitted from the emission surface 107 passes through the opening
115, and the substrate P can be irradiated with the exposure light.
In the present embodiment, the plate portion 131 includes an upper
surface 116A facing at least a portion of the emission surface 107,
and a lower surface 116B capable of facing the surface of the
substrate P. The opening 115 includes a hole which is formed so as
to link the upper surface 116A to the lower surface 116B. The upper
surface 116A is disposed in the vicinity of the upper end of the
opening 115, and the lower surface 116B is disposed in the vicinity
of the lower end of the opening 115.
[0205] In the present embodiment, the upper surface 116A is flat.
The upper surface 116A is substantially parallel to the XY plane.
Meanwhile, at least a portion of the upper surface 116A may be
inclined with respect to the XY plane, and may include a curved
surface. In the present embodiment, the lower surface 116B is flat.
The lower surface 116B is substantially parallel to the XY plane.
Meanwhile, at least a portion of the lower surface 116B may be
inclined with respect to the XY plane, and may include a curved
surface. The lower surface 116B holds the liquid LQ between the
surface of the substrate P and the lower surface.
[0206] As shown in FIG. 16, in the present embodiment, the outer
shape of the lower surface 116B is octagonal. Meanwhile, the outer
shape of the lower surface 116B may be an arbitrary polygonal shape
such as, for example, a quadrilateral shape or a hexagonal shape.
In addition, the outer shape of the lower surface 116B may be
circular, elliptical or the like.
[0207] The liquid immersion member 103 includes a supply port 117
capable of supplying the liquid LQ, a recovery port 118 capable of
recovering the liquid LQ, a recovery channel 119 in which the
liquid LQ recovered from the recovery port 118 flows, and a
discharge portion 120 that separates and discharges the liquid LQ
and gas G of the recovery channel 119.
[0208] The supply port 117 can supply the liquid LQ to the optical
path K. In the present embodiment, the supply port 117 supplies the
liquid LQ to the optical path K in at least a portion of the
exposure of the substrate P. The supply port 117 is disposed in the
vicinity of the optical path K so as to face the optical path K. In
the present embodiment, the supply port 117 supplies the liquid LQ
to a space SR between the emission surface 107 and the upper
surface 116A. At least a portion of the liquid LQ supplied from the
supply port 117 to the space SR is supplied to the optical path K,
and is supplied onto the substrate P through the opening 115.
Meanwhile, at least a portion of at least one supply port 117 may
face the lateral side 108F.
[0209] The liquid immersion member 103 includes a supply channel
129 connected to the supply port 117. At least a portion of the
supply channel 129 is formed inside the liquid immersion member
103. In the present embodiment, the supply port 117 includes an
opening formed at one end of the supply channel 129. The other end
of the supply channel 129 is connected to a liquid supply device
135 through a channel 134 which is formed by a supply tube
134P.
[0210] The liquid supply device 135 can send out the liquid LQ
which is cleaned and temperature-regulated. The liquid LQ sent out
from the liquid supply device 135 is supplied to the supply port
117 through the channel 134 and the supply channel 129. The supply
port 117 supplies the liquid LQ from the supply channel 129 to the
optical path K (space SR).
[0211] The recovery port 118 can recover at least a portion of the
liquid LQ on the substrate P (on the object). The recovery port 118
recovers at least a portion of the liquid LQ on the substrate P in
the exposure of the substrate P. The recovery port 118 is directed
toward the -Z direction. In at least a portion of the exposure of
the substrate P, the surface of the substrate P faces the recovery
port 118.
[0212] In the present embodiment, the liquid immersion member 103
includes a first member 128 having the recovery port 118. The first
member 128 includes a first surface 128B, a second surface 128A
directed toward a direction different from that of the first
surface 128B, and a plurality of holes 128H that link the first
surface 128B to the second surface 128A. In the present embodiment,
the recovery port 118 includes the holes 128H of the first member
128. In the present embodiment, the first member 128 is a mesh
member (porous member) having a plurality of holes (openings or
pores) 128H. Meanwhile, the first member 128 may be a mesh filter
in which numerous small holes are formed in a mesh shape. That is,
various members having holes capable of recovering the liquid LQ
can be applied to the first member 128.
[0213] At least a portion of the recovery channel 119 is formed
inside the liquid immersion member 103. In the present embodiment,
an opening 132K is formed at the lower end of the recovery channel
119. The opening 132K is disposed in at least a portion of the
vicinity of the lower surface 116B. The opening 132K is formed at
the lower end of the main body portion 132. The opening 132K is
directed downward (-Z direction). In the present embodiment, the
first member 128 is disposed in the opening 132K. The recovery
channel 119 includes a space between the main body portion 132 and
the first member 128.
[0214] The first member 128 is disposed in at least a portion of
the vicinity of the optical path K (lower surface 116B). In the
present embodiment, the first member 128 is disposed in the
vicinity of the optical path K. Meanwhile, the annular first member
128 may be disposed in the vicinity of the optical path K (lower
surface 116B), and a plurality of first members 128 may be
discretely disposed in the vicinity of the optical path K (lower
surface 116B).
[0215] In the present embodiment, the first member 128 is a
plate-shaped member. The first surface 128B is one surface of the
first member 128, and the second surface 128A is the other surface
of the first member 128. In the present embodiment, the first
surface 128B faces a space SP on the lower side (-Z direction side)
of the liquid immersion member 103. The space SP includes, for
example, a space between a lower surface 114 of the liquid
immersion member 103 and a surface of an object (such as the
substrate P) facing the lower surface 114 of the liquid immersion
member 103. When the liquid immersion space LS is formed on the
object (such as the substrate P) facing the lower surface 114 of
the liquid immersion member 103, the space SP includes the liquid
immersion space (liquid space) LS and a gas space GS.
[0216] In the present embodiment, the first member 128 is disposed
in the opening 132K so that the first surface 128B faces the space
SP and the second surface 128A faces the recovery channel 119. In
the present embodiment, the first surface 128B and the second
surface 128A are substantially parallel to each other. The first
member 128 is disposed in the opening 132K so that the second
surface 128A is directed toward the +Z direction and the first
surface 128B is directed toward the opposite direction (-Z
direction) to the second surface 128A. In addition, in the present
embodiment, the first member 128 is disposed in the opening 132K so
that the first surface 128B and the second surface 128A, and the XY
plane are substantially parallel to each other.
[0217] In the following description, the first surface 128B may be
referred to as the lower surface 128B, and the second surface 128A
may be referred to as the upper surface 128A.
[0218] Meanwhile, the first member 128 may not be plate-shaped. In
addition, the lower surface 128B and the upper surface 128A may be
non-parallel to each other. In addition, at least a portion of the
lower surface 128B may be inclined with respect to the XY plane,
and may include a curved surface. In addition, at least a portion
of the upper surface 128A may be inclined with respect to the XY
plane, and may include a curved surface.
[0219] The hole 128H is formed so as to link the lower surface 128B
to the upper surface 128A. A fluid (including at least one of the
gas G and the liquid LQ) can flow through the hole 128H of the
first member 128. In the present embodiment, the recovery port 118
includes an opening of the lower end of the hole 128H on the lower
surface 128B side. The lower surface 128B is disposed in the
vicinity of the lower end of the hole 128H, and the upper surface
128A is disposed in the vicinity of the upper end of the hole
128H.
[0220] The recovery channel 119 is connected to the hole 128H
(recovery port 118) of the first member 128. The first member 128
recovers at least a portion of the liquid LQ on the substrate P
(object) facing the lower surface 128B, from the hole 128H
(recovery port 118). The liquid LQ recovered from the hole 128H of
the first member 128 flows through the recovery channel 119.
[0221] In the present embodiment, the lower surface 114 of the
liquid immersion member 103 includes the lower surface 116B and the
lower surface 128B. In the present embodiment, the lower surface
128B is disposed in at least a portion of the vicinity of the lower
surface 116B. In the present embodiment, the annular lower surface
128B is disposed in the vicinity of the lower surface 116B.
Meanwhile, a plurality of lower surfaces 128B may be discretely
disposed in the vicinity of the lower surface 116B (optical path
K).
[0222] In the present embodiment, the first member 128 includes a
first portion 381 and a second portion 382. In the present
embodiment, the second portion 382 is disposed outside the first
portion 381 with respect to a radial direction for the optical path
K. In the present embodiment, the second portion 382 is configured
such that the inflow of the gas G from the space SP through the
hole 128H to the recovery channel 119 is suppressed further than in
the first portion 381. In the present embodiment, the width of the
first portion 381 is smaller than the width of the second portion
382 with respect to a radial direction for the optical path K.
[0223] In the present embodiment, in the second portion 382, the
inflow resistance of the gas G from the space SP through the hole
12811 to the recovery channel 119 is greater than in the first
portion 381.
[0224] The first portion 381 and the second portion 382 have a
plurality of holes 128H, respectively. For example, in a state
where the liquid immersion space LS is formed in the space SP,
there is a possibility that some of the holes 128H out of the
plurality of holes 128H of the first portion 381 may come into
contact with the liquid LQ of the liquid immersion space LS, and
that some of the holes 128H may not come into contact with the
liquid LQ of the liquid immersion space LS. In addition, there is a
possibility that some of the holes 128H out of the plurality of
holes 12811 of the second portion 382 may come into contact with
the liquid LQ of the liquid immersion space LS, and that some of
the holes 128H may not come into contact with the liquid LQ of the
liquid immersion space LS.
[0225] In the present embodiment, the first portion 381 can recover
the liquid LQ from the hole 128H that comes into contact with the
liquid LQ (liquid LQ on the substrate P) of the space SP to the
recovery channel 119. In addition, the first portion 381 suctions
the gas G from the hole 128H which does not come into contact with
the liquid LQ to the recovery channel 119.
[0226] That is, the first portion 381 can recover the liquid LQ of
the liquid immersion space LS from the hole 128H facing the liquid
immersion space LS to the recovery channel 119, and suctions the
gas G from the hole 128H facing the gas space GS located outside
the liquid immersion space LS to the recovery channel 119.
[0227] In other words, the first portion 381 can recover the liquid
LQ of the liquid immersion space LS from the hole 128H facing the
liquid immersion space LS to the recovery channel 119, and suctions
the gas G from the hole 128H which does not face the liquid
immersion space LS to the recovery channel 119.
[0228] That is, when the interface LG of the liquid LQ of the
liquid immersion space LS is present between the first portion 381
and the substrate P, the first portion 381 recovers the liquid LQ
to the recovery channel 119 together with the gas G. Meanwhile, in
the interface LG, both the liquid LQ and the gas G may be suctioned
from the hole 128H facing the liquid immersion space LS and the gas
space GS.
[0229] The second portion 382 can recover the liquid LQ from the
hole 128H which comes into contact with the liquid LQ (liquid LQ on
the substrate P) of the space SP to the recovery channel 119. In
addition, the second portion 382 is configured such that the inflow
of the gas G from the hole 128H which does not come into contact
with the liquid LQ to the recovery channel 119 is suppressed.
[0230] That is, the second portion 382 can recover the liquid LQ of
the liquid immersion space LS from the hole 128H facing the liquid
immersion space LS to the recovery channel 119, and is configured
such that the inflow of the gas G from the hole 128H facing the gas
space GS located outside the liquid immersion space LS to the
recovery channel 119 is suppressed.
[0231] In the present embodiment, the second portion 382 recovers
substantially only the liquid LQ to the recover channel 119, and
does not recover the gas G to the recovery channel 119.
[0232] In the present embodiment, among configuration members of
the liquid immersion member, regions having the ta-C:Ti film formed
on the surfaces thereof include configuration members disposed in
regions which come into contact with the liquid LQ, as is the case
with the first embodiment.
[0233] In the present embodiment, since the reprecipitation of the
resist component or the topcoat component in the liquid LQ can also
be suppressed, it is possible to reduce the number of exposure
defects caused by the adhesion of the reprecipitates to the
substrate P due to the peeling-off thereof. In addition, since the
frequency of cleaning processes can be reduced by suppressing the
reprecipitation of the resist component or the topcoat component,
it is possible to reduce deteriorations in productivity.
[0234] Particularly, in the liquid immersion member of the present
embodiment, the recovery pressure of liquid is high. The ta-C:Ti
film according to the embodiment of the present invention is used
in such a liquid immersion member, thereby allowing the
above-mentioned effect to be exhibited more sufficiently.
[0235] Meanwhile, in the each embodiment mentioned above, the
optical path on the emission side (image plane side) of the
terminal optical element 5 of the projection optical system PL is
filled with the liquid LQ. However, as disclosed in, for example,
PCT International Publication No. WO2004/019128, it is possible to
adopt the projection optical system PL in which the optical path on
the incident side (object plane side) of the terminal optical
element is also filled with the liquid LQ.
[0236] Meanwhile, in the each embodiment mentioned above, water is
used as the liquid LQ, but liquids other than water may be
used.
[0237] In addition, in the present embodiment, the ta-C:Ti film is
provided on the surface of the liquid immersion member 6, and is
set to have a hydrophilic property by irradiation with ultraviolet
rays, but a portion of the liquid immersion member may be set to
have a water-repellent property. The ta-C:Ti film having a
hydrophilic property is provided in a portion which comes into
contact with the liquid, and the ta-C:Ti film having a
water-repellent property is provided on the outer circumference
thereof, thereby allowing an effect of holding the liquid in the
portion having a hydrophilic property to be expected. Meanwhile, it
is possible to combine the portion having a water-repellent
property with the portion having a hydrophilic property by
irradiation with ultraviolet rays, in a state where the ta-C:Ti
film is formed and then is covered with a light-shielding
member.
[0238] Meanwhile, as the substrate P of each of the present
embodiments mentioned above, not only a semiconductor wafer for a
semiconductor device, but also a glass substrate for a display
device, a ceramic wafer for a thin-film magnetic head, or an
original plate (synthetic silica, silicon wafer) of a mask or a
reticle used in the exposure apparatus and the like are
applied.
[0239] The exposure apparatus EX can also be applied to a
step-and-repeat type projection exposure apparatus (stepper) in
which the sequential step movement is performed on the substrate P
by collectively exposing the patterns of the mask M in the state
where the mask M and the substrate P are stopped, in addition to a
step-and-scan type scanning exposure apparatus (scanning stepper)
that scans and exposes the pattern of the mask M by synchronously
moving the mask M and the substrate P.
[0240] Further, in the step-and-repeat type exposure, after a
reduced image of a first pattern is transferred onto the substrate
P using the projection optical system in the state where the first
pattern and the substrate P are substantially stopped, a reduced
image of a second pattern may be partially overlapped with the
first pattern using the projection optical system to perform
collective exposure onto the substrate P in the state where the
second pattern and the substrate P are substantially stopped
(stitch-type collective exposure apparatus). In addition, the
stitch-type exposure apparatus can also be applied to a
step-and-stitch type exposure apparatus which partially overlaps at
least two patterns with each other on the substrate P to transfer
them, and sequentially moves the substrate P.
[0241] In addition, for example, as disclosed in U.S. Pat. No.
6,611,316, the present invention can also be applied to an exposure
apparatus which synthesizes patterns of two masks on the substrate
through the projection optical system, and substantially
simultaneously double-exposes one shot region on the substrate by
one-time scanning exposure and the like. In addition, the present
invention can also be applied to a proximity-type exposure
apparatus, a mirror projection aligner and the like.
[0242] In addition, the exposure apparatus EX may be a twin stage
type exposure apparatus which includes a plurality of substrate
stages, as disclosed in, for example, U.S. Pat. No. 6,341,007, U.S.
Pat. No. 6,208,407, U.S. Pat. No. 6,262,796 and the like. In this
case, a recovery channel which has a recovery port disposed at the
end thereof and which is provided with a trapping surface may be
provided in each of the plurality of substrate stages, and may be
provided in some of the substrate stages.
[0243] In addition, the exposure apparatus EX may be an exposure
apparatus which includes a substrate stage that holds a substrate
and a measurement stage in which a reference member having a
reference mark formed therein and/or various photoelectronic
sensors are mounted and which does not hold the substrate to be
exposed, as disclosed in, for example, U.S. Pat. No. 6,897,963,
United States patent application, Publication No. 2007/0,127,006
and the like. In addition, the above exposure apparatus can also be
applied to an exposure apparatus including a plurality of substrate
stages and measurement stages. In this case, a recovery channel
which has a recovery port disposed at the end thereof and which is
provided with a trapping surface may be disposed in the measurement
stage.
[0244] The type of exposure apparatus EX is also not limited to a
semiconductor device fabrication exposure apparatus that exposes
the pattern of a semiconductor device on the substrate P, but can
be widely applied to, for example, exposure apparatuses that are
used to fabricate liquid crystal display devices or displays, and
exposure apparatuses that are used to manufacture thin film
magnetic heads, image capturing devices (CCDs), micromachines,
MEMS, DNA chips, reticles or masks, and the like.
[0245] Meanwhile, in each of the present embodiments mentioned
above, the position information of each of the stages is measured
using an interferometer system that includes laser interferometers,
but the present invention is not limited thereto; for example, an
encoder system that detects a scale (diffraction grating) provided
to each of the stages may be used.
[0246] Meanwhile, in the embodiments described above, an optically
transmissive mask wherein a predetermined light-shielding pattern
(or phase pattern or dimming pattern) is formed on an optically
transmissive substrate is used; however, instead of such a mask, a
variable shaped mask (also called an electronic mask, an active
mask, or an image generator), wherein a transmissive pattern, a
reflective pattern, or a light emitting pattern is formed based on
electronic data of the pattern to be exposed, as disclosed in, for
example, U.S. Pat. No. 6,778,257, may be used. In addition, instead
of a variable shaped mask that includes a non-emissive type image
display device, a pattern forming apparatus that includes a
self-luminous type image display device may be provided.
[0247] In each of the embodiments mentioned above, although the
exposure apparatus that includes the projection optical system PL
has been described by way of example, the present invention can
nevertheless be applied to an exposure apparatus and an exposing
method that do not use the projection optical system PL. For
example, the immersion space can be formed between an optical
member such as a lens and the substrate, and the substrate can be
irradiated with the exposure light through the optical member.
[0248] In addition, the present invention can also be applied to an
exposure apparatus (lithographic system) that, by forming
interference fringes on the substrate P, exposes the substrate P
with a line-and-space pattern, as disclosed in, for example, PCT
International Publication No. WO2001/035,168.
[0249] The exposure apparatus EX of the above-mentioned embodiments
is manufactured by assembling various subsystems including each
component falling within the scope of the claims so that
predetermined mechanical, electrical, and optical accuracies are
maintained. In order to secure these various accuracies, before and
after this assembly, adjustment to achieve optical accuracy with
respect to various optical systems and adjustment to achieve
mechanical accuracy with respect to various mechanical systems are
performed. Processes of assembling the exposure apparatus from
various subsystems include the connection of mechanical components,
the wiring and connection of electrical circuits, the piping and
connection of pneumatic circuits, and the like, among various
subsystems. There is a process of assembling each individual
subsystem prior to the process of assembling the exposure apparatus
from various subsystems. When the process of assembling the
exposure apparatus from the various subsystems is terminated, a
comprehensive adjustment is performed to ensure the various
accuracies of the exposure apparatus as a whole. Meanwhile, it is
preferable to manufacture the exposure apparatus in a clean room in
which, for example, the temperature and the cleanliness level are
controlled.
[0250] As shown in FIG. 18, a micro-device such as a semiconductor
device is manufactured by a step 501 of designing functions and
performance of the micro-device, a step 502 of fabricating a mask
(reticle) on the basis of the design step, a step 503 of
manufacturing a substrate which is a base material of the device, a
substrate processing step 504 including a step of exposing the
substrate with exposure light from a pattern of the mask using the
exposure apparatus of the above-mentioned embodiment and a step of
developing the exposed substrate, a device assembling step
(including manufacturing processes such as dicing, bonding, and
packaging) 505, an inspecting step 506, and the like.
[0251] Meanwhile, the features of each of the embodiments mentioned
above can be combined as appropriate. In addition, there may be
cases in which some of the components are not used. In addition,
each disclosure of every Japanese Unexamined Patent Application,
First Publication and United States patent related to the exposure
apparatus and the like recited in each of the embodiments and
modified examples described above is hereby incorporated by
reference in its entirety to the extent permitted by national laws
and regulations.
[0252] As an example, in the above-mentioned embodiment, a
description has been given of the functional film which is applied
to the surface of the base material used in a state of being
immersed in liquid, but the present invention is not limited
thereto. The functional film of the present invention can be
applied to the surfaces of various base materials other than the
base material used in a state of being immersed in liquid.
[0253] Specifically, the functional film 308B according to an
embodiment of the present invention is a functional film applied to
the surface of the base material 308A, and includes a film of
Ti-doped tetrahedral amorphous carbon (ta-C:Ti film). In the
composition of the film, .alpha., which is defined by the following
Expression (3) and which is the atomic ratio of Ti to C (Ti/C
atomic ratio) is equal to or greater than 0.03 and equal to or less
than 0.09.
[ Expression 3 ] .alpha. = ( Ti / C atomic ratio ) = ( number of Ti
atoms ) / { ( number of sp 3 - C atoms ) + ( number of sp 2 - C
atoms ) } ( 3 ) ##EQU00006##
[0254] here, (number of Ti atoms): number of Ti atoms occupying the
film
[0255] (number of sp.sup.3-C atoms): number of carbon atoms having
a sp.sup.3 hybrid orbital occupying the film
[0256] (number of sp.sup.2-C atoms): number of carbon atoms having
a sp.sup.2 hybrid orbital occupying the film
[0257] The thickness of the ta-C:Ti film can be set to be, for
example, equal to or greater than 10 nm and equal to or less than 1
.mu.m. Specifically, the thickness of the ta-C:Ti film can be set
to be approximately 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, 200,
300, 400, 500, 600, 700, 800, 900, or 1,000 nm. Meanwhile, the
thickness of the ta-C:Ti film is not limited thereto.
[0258] The functional film 308B described above has the
characteristics of being chemically stable and being not likely to
be contaminated, and thus can be used as not only a liquid
immersion member, but also a protective film of an optical member
or the like.
* * * * *