U.S. patent application number 14/594918 was filed with the patent office on 2015-08-20 for chemical mechanical polishing conditioner with high performance.
The applicant listed for this patent is Kinik Company. Invention is credited to Chia-Feng CHIU, Jui-Lin CHOU, I-Tsao LIAO, Wen-Jen LIAO, Chia-Chun WANG.
Application Number | 20150231759 14/594918 |
Document ID | / |
Family ID | 53797294 |
Filed Date | 2015-08-20 |
United States Patent
Application |
20150231759 |
Kind Code |
A1 |
CHOU; Jui-Lin ; et
al. |
August 20, 2015 |
CHEMICAL MECHANICAL POLISHING CONDITIONER WITH HIGH PERFORMANCE
Abstract
The present invention relates to a chemical mechanical polishing
conditioner with high performance, comprising a substrate; a
binding layer disposed on the substrate; and a plurality of
abrasive particles fixed directly on the substrate by the binding
layer, or each abrasive particle disposed on a metal fixing seat
and the substrate have a plurality of blind holes and a plurality
of through holes, so that the metal fixing seats are installed into
the blind holes or the through holes, and the metal fixing seat
fixed on the substrate by the binding layer; wherein the abrasive
particles are treated by a surface processing treatment to make the
abrasive particles have specific cutting edge angles, crystal
structures, tip heights, or tip orientations. Therefore, the
present invention can control the profile of each abrasive particle
to accomplish the best polishing performance.
Inventors: |
CHOU; Jui-Lin; (Hualien
County, TW) ; WANG; Chia-Chun; (New Taipei City,
TW) ; LIAO; I-Tsao; (New Taipei City, TW) ;
CHIU; Chia-Feng; (New Taipei City, TW) ; LIAO;
Wen-Jen; (New Taipei City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Kinik Company |
Taipei City |
|
TW |
|
|
Family ID: |
53797294 |
Appl. No.: |
14/594918 |
Filed: |
January 12, 2015 |
Current U.S.
Class: |
451/443 ; 51/298;
51/307; 51/309 |
Current CPC
Class: |
B24B 53/12 20130101;
B24D 18/0072 20130101; B24B 53/017 20130101; B24D 3/06
20130101 |
International
Class: |
B24B 53/017 20060101
B24B053/017; B24D 18/00 20060101 B24D018/00 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 18, 2014 |
TW |
103105288 |
Claims
1. A chemical mechanical polishing conditioner with high
performance, comprising: a substrate; a binding layer disposed on
the substrate; and a plurality of abrasive particles fixed directly
on the substrate by the binding layer, or each abrasive particle
disposed on a metal fixing seat, and the substrate having a
plurality of blind holes or a plurality of through holes, so that
the metal fixing seat is installed into these blind holes or these
through holes, and the metal fixing seat is fixed on the substrate
by the binding layer; wherein the abrasive particles are performed
a surface processing treatment, so that these abrasive particles
have specific cutting edge angles, crystal structures, tip heights
or tip orientations, or these abrasive particles are not performed
a processing treatment.
2. The chemical mechanical polishing conditioner with high
performance of claim 1, wherein the cutting edge angles of these
abrasive particles are 30 degrees to 150 degrees.
3. The chemical mechanical polishing conditioner with high
performance of claim 2, wherein the cutting edge angles of these
abrasive particles are 60 degrees or 90 degrees.
4. The chemical mechanical polishing conditioner with high
performance of claim 1, wherein crystal structure of these abrasive
particles is a tetrahedron, a hexahedron, an octahedron or the
other shape with specific cutting function.
5. The chemical mechanical polishing conditioner with high
performance of claim 1, wherein these abrasive particles have the
same tip heights.
6. The chemical mechanical polishing conditioner with high
performance of claim 1, wherein these abrasive particles have
different tip heights.
7. The chemical mechanical polishing conditioner with high
performance of claim 1, wherein each abrasive particle is fixed on
the metal fixing seat by the abrasive binding layer.
8. The chemical mechanical polishing conditioner with high
performance of claim 1, wherein these abrasive particles have plane
bottom or non-plane bottom.
9. The chemical mechanical polishing conditioner with high
performance of claim 1, wherein the metal fixing seat has a plane
top or a blind hole at the top.
10. The chemical mechanical polishing conditioner with high
performance of claim 1, wherein the abrasive particles are
artificial diamonds, nature diamonds, polycrystalline diamonds or
cubic boron nitride.
11. The chemical mechanical polishing conditioner with high
performance of claim 1, wherein the abrasive particles have a
particle size of 30 to 2000 .mu.m.
12. The chemical mechanical polishing conditioner with high
performance of claim 1, wherein a composition of the binding layer
is made of a ceramic material, a brazing material, an
electroplating material, a metallic material, or a polymer
material.
13. The chemical mechanical polishing conditioner with high
performance of claim 7, wherein a composition of the abrasive
binding layer is made of a ceramic material, a brazing material, an
electroplating material, a metallic material, or a polymer
material.
14. The chemical mechanical polishing conditioner with high
performance of claim 12, wherein the brazing material is at least
one selected from the group consisting of iron, cobalt, nickel,
chromium, manganese, silicon, aluminum, and combinations
thereof.
15. The chemical mechanical polishing conditioner with high
performance of claim 12, wherein the polymer material is epoxy
resin, polyester resin, polyacrylic resin, phenolic resin.
16. The chemical mechanical polishing conditioner with high
performance of claim 1, wherein the substrate is made of stainless
steel substrate, mold steel substrate, metal alloy substrate,
ceramic material substrate or polymer material substrate or
combinations thereof.
17. The chemical mechanical polishing conditioner with high
performance of claim 1, wherein the substrate has a plurality of
blind holes, so that the metal fixing seat is installed into each
blind hole.
18. A method for manufacturing chemical mechanical polishing
conditioner with high performance, comprising: providing a
plurality of abrasive particles and a substrate having a binding
layer; providing a surface processing treatment to make the
abrasive particles have specific cutting edge angles, crystal
structures, tip heights, or tip orientations; and fixing directly
each abrasive particle on the substrate by the binding layer; or
fixing each abrasive particle on the metal fixing seat, so that the
metal fixing seat is fixed on the substrate by the binding
layer.
19. The method for manufacturing chemical mechanical polishing
conditioner with high performance of claim 18, wherein the surface
process treatment is a mechanical polishing method, a chemical
etching method, or a laser processing method.
20. The method for manufacturing chemical mechanical polishing
conditioner with high performance of claim 18, wherein a fixing
method of the binding layer is ceramic sintering method, a brazing
method, an electroplating method, a metal sintering method, or a
polymer hardening method.
21. The method for manufacturing chemical mechanical polishing
conditioner with high performance of claim 18, wherein each
abrasive particle is fixed on the metal fixing seat by the abrasive
binding layer.
22. The method for manufacturing chemical mechanical polishing
conditioner with high performance of claim 21, wherein the fixing
method of the abrasive binding layer is ceramic sintering method, a
brazing method, an electroplating method, a metal sintering method,
or a polymer hardening method.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application claims the benefits of the Taiwan Patent
Application Serial Number 103105288, filed on Feb. 18, 2014, the
subject matter of which is incorporated herein by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a chemical mechanical
polishing conditioner, and more particularly to a chemical
mechanical polishing conditioner including a plurality of abrasive
particles which are performed surface treatments.
[0004] 2. Description of Related Art
[0005] Chemical mechanical polishing (CMP) is a common polishing
process in various industries, which can be used to grind the
surfaces of various articles, including ceramics, silicon, glass,
quartz, or a metal chip. In addition, with the rapid development of
integrated circuits, chemical mechanical polishing becomes one of
the common techniques for wafer planarization because it can
achieve an object of whole planarization.
[0006] During the chemical mechanical polishing process of
semiconductor, impurities or uneven structure on the surface of a
wafer are removed by contacting the wafer (or the other
semiconductor elements) with a polishing pad and using a polishing
liquid if necessary, through the chemical reaction and mechanical
force. When the polishing pad has been used for a certain period of
time, the polishing performance and efficiency are reduced because
the debris produced in the polishing process may accumulate on the
surface of the polishing pad. Therefore, a conditioner can be used
to condition the surface of the polishing pad, such that the
surface of the polishing pad is re-roughened and maintained at an
optimum condition for polishing. In the process for manufacturing a
conditioner, it is necessary to dispose an abrasive layer by mixing
abrasive particles and a binding layer on the substrate surface,
and to fix the abrasive layer to the surface of the substrate by
brazing or sintering methods.
[0007] In the known technology, such as Taiwan Patent Issue No.
1306048, it discloses that CMP pad dressers with superabrasive
particles oriented into an attitude that controls CMP pad
performance, and methods associated therewith are disclosed and
described. The controlled CMP pad performance may be selected to
optimize CMP pad dressing rate and dresser wear. Further, a method
for controlling CMP pad dresser performance in a CMP pad dresser as
part of the pad dresser fabrication process, the pad dresser
employing a plurality of superabrasive particles comprising:
orienting the superabrasive particles into an attitude that
provides an anticipated performance characteristic; and securing
the securing the superabrasive particles to a substrate in said
attitude.
[0008] Besides, in the other known technology, such as Japanese
Patent Publication No. 2006130586, it discloses that among a number
of diamond abrasive grains, a group of diamond abrasive grains
having a higher percentage content of diamond abrasive grains where
the proportion of area occupied by crystal orientation 111 face is
larger than that of the other faces is selected, and this group of
diamond abrasive grains are dispersed in a plating liquid to be
plated on the surface 2 of a base material 1 dipped in a plating
solution, whereby among a number of diamond abrasive grains plated
on the surface 2 of the base material 1, the proportion of diamond
abrasive grains A1, A2, A4 to A6, A8, A9, the crystal orientation
111 faces (a) of which are oriented substantially parallel to the
surface 2 of the base material 1 ranges from 65 to 95%, and the
X-ray reflection intensity of the crystal orientation 111 face of
the diamond abrasive grains is 2500 CPS or more.
[0009] However, in the above-mentioned chemical mechanical
polishing conditioner, tip orientations, crystalline forms of
abrasive particles or the abrasive particles are mainly used to
form different angles of inclination, and the tip orientations of
the abrasive particles are controlled to promote the polishing
performance of the conditioner. But, the abrasive particles of the
above-mentioned chemical mechanical polishing conditioner are
limited to their crystal forms, such as hexoctahedron, so that
cutting edge angles of the abrasive particles cannot avoid the
fixing cutting edge angles due to their structures. Therefore,
there is an urgent need for a chemical mechanical polishing
conditioner with high performance, which is used to control
profiles of each abrasive particle to achieve an optimum polishing
performance.
SUMMARY OF THE INVENTION
[0010] An object of the present invention is to provide a chemical
mechanical polishing conditioner with high performance, which is
used to control profiles of each abrasive particle to achieve an
optimum ability of cutting. Besides, the abrasive particles can
avoid limitations of their crystal form based on a condition of
profiles of each abrasive particle to obtain an optimum cutting
edge angle.
[0011] To achieve the above object, the present invention provides
a chemical mechanical polishing conditioner with high performance,
comprising: a substrate; a binding layer disposed on the substrate;
and a plurality of abrasive particles fixed directly on the
substrate by the binding layer, or each abrasive particle disposed
on a metal fixing seat; wherein the substrate have a plurality of
blind holes or a plurality of through holes, so that the metal
fixing seats are installed into the blind holes or the through
holes, and the metal fixing seat are fixed on the substrate by the
binding layer; wherein the abrasive particles are treated by a
surface processing treatment, so that the abrasive particles have
specific cutting edge angles, crystal structures, tip heights, or
tip orientations. Further, the cutting edge angles, crystal
structures, tip heights, or tip orientations may be randomly varied
based on the user's requirements or processing conditions;
alternatively, the abrasive particles are not treated by a surface
processing treatment, so that the abrasive particles are formed by
a specific ration or a specific arrangement to control the surface
characteristics of the polishing pad. The present invention is
different form a traditional chemical mechanical polishing
conditioner of which the polishing performance are limited to their
crystal forms, such as hexoctahedron, of the abrasive particles
(artificial diamonds or synthetic diamond). The chemical mechanical
polishing conditioner with high performance of the present
invention can be designed to the abrasive particles with specific
profiles, so that the polishing performance is not limited to their
crystal forms, such as hexoctahedron.
[0012] In the chemical mechanical polishing conditioner with high
performance of the present invention, the present invention is
different from the original artificial diamonds which can only have
the cutting edge angle of 70 degree or 90 degree. The cutting edge
angle of theses abrasive particles may be randomly varied based on
the user's requirements or polishing processing conditions; wherein
the cutting edge angle of theses abrasive particles may be 30
degree to 150 degree, and in an aspect of the present invention,
the cutting edge angle of theses abrasive particles may be 60
degree to 90 degree. Besides, in the chemical mechanical polishing
conditioner with high performance of the present invention, the
crystal structure of these abrasive particles may be randomly
varied based on a surface processing treatment and the user's
requirements or polishing processing conditions; wherein the
crystal structure of these abrasive particles may be a tetrahedron,
a hexahedron, an octahedron, or the other shape with specific
cutting function, but the present invention is not limited thereto.
In an aspect of the present invention, the crystal structure of
these abrasive particles may be a hexahedron. Besides, in the
chemical mechanical polishing conditioner with high performance of
the present invention, the substrate has a plurality of blind holes
or a plurality of through holes, so that the metal fixing seats are
installed into the blind holes or the through holes.
[0013] In the chemical mechanical polishing conditioner with high
performance of the present invention, the tip heights of these
abrasive particles may be randomly varied based on the user's
requirements or polishing conditions, so that these abrasive
particles may have the same tip heights, or theses abrasive
particles may have different tip heights. In an aspect of the
present invention, these abrasive particles may have the same tip
heights; alternatively, these abrasive particles are controlled by
metal fixing seats with different protrusion heights, so that these
abrasive particles have the same tip heights. In another aspect of
the present invention, the abrasive particles may have different
tip heights; wherein the abrasive particles may have different tips
through surface treatments; alternatively, the abrasive particles
are controlled by metal fixing seats with different protrusion
heights, so that these abrasive particles have different tip
heights.
[0014] In the chemical mechanical polishing conditioner with high
performance of the present invention, each abrasive particle may be
fixed on the metal fixing seats by an abrasive binding layer;
wherein these abrasive particles may have plane bottoms or
non-plane bottoms, and the metal fixing seat may have a plane top
or blind holes at the top. In an aspect of the present invention,
theses abrasive particles having plane bottoms may be disposed on
the fixing seats having plane tops, so that theses abrasive
particles having plane bottoms are corresponded with the metal
fixing seats having the plane tops. Besides, theses abrasive
particles having plane bottoms also may be not disposed directly on
the substrate instead of through the metal fixing seats. On the
other hand, theses abrasive particles having non-plane bottoms may
be corresponded with the metal fixing seats having blind holes at
the top, so that theses abrasive particles having non-plane bottoms
are corresponded with the metal fixing seats having blind holes at
the top.
[0015] In the chemical mechanical polishing conditioner with high
performance of the present invention, these abrasive particles may
be artificial diamonds, nature diamonds, polycrystalline diamonds
or cubic boron nitride. In a preferred aspect of the present
invention, the abrasive particles may be artificial diamonds.
Furthermore, in the chemical mechanical polishing conditioner with
high performance of the present invention, the abrasive particles
may have a particle size of 30 to 2000 .mu.m. In an aspect of the
present invention, these abrasive particles disposed on the metal
fixing seats may have larger particle sizes such as 800 .mu.m;
wherein the metal fixing seats may be designed as metal bars with
cylindrical shapes and the external diameters of the metal fixing
seats may be 1 mm to 10 mm, the external diameters of the metal
fixing seats are preferably 3 mm; therefore, 60 to 70 metal fixing
seats may generally be installed into the substrate of the
conditioner having external diameters of 4 inch.
[0016] In the chemical mechanical polishing conditioner with high
performance of the present invention, these abrasive particles are
fixed directly on the substrate by the binding layer;
alternatively, each abrasive particle is disposed on the metal
fixing seat and the metal fixing seat is fixed on the substrate by
the binding layer; wherein the compositions of the binding layer
may be varied based on the polishing conditions and requirements,
which includes: a ceramic material, a brazing material, an
electroplating material, a metallic material, or a polymer
material, but the present invention is not limited thereto.
Besides, in the chemical mechanical polishing conditioner with high
performance of the present invention, the polymer material can be
epoxy resin, polyester resin, polyacrylic resin, or phenolic resin,
and the brazing material can be at least one selected from the
group consisting of iron, cobalt, nickel, chromium, manganese,
silicon, aluminum, and combinations thereof. In an aspect of the
present invention, the compositions of the binding layer are
preferably epoxy resin.
[0017] In the chemical mechanical polishing conditioner with high
performance of the present invention, each abrasive particle may be
fixed on the metal fixing seat by the abrasive binding layer;
wherein the compositions of the abrasive binding layer may be
varied based on the polishing conditions and requirements, which
includes: a ceramic material, a brazing material, an electroplating
material, a metallic material, or a polymer material, but the
present invention is not limited thereto. Besides, in the chemical
mechanical polishing conditioner with high performance of the
present invention, the polymer material can be epoxy resin,
polyester resin, polyacrylic resin, or phenolic resin, and the
brazing material can be at least one selected from the group
consisting of iron, cobalt, nickel, chromium, manganese, silicon,
aluminum, and combinations thereof. In an aspect of the present
invention, the compositions of the binding layer are preferably
nickel-based metal brazing material.
[0018] Besides, in the chemical mechanical polishing conditioner
with high performance of the present invention, the materials and
sizes of the substrate may be varied based on the polishing
conditions and requirements; wherein the materials of the substrate
can be stainless steel substrate, mold steel substrate, metal alloy
substrate, ceramic material substrate or polymer material substrate
or combinations thereof, but the present invention is not be
limited thereto. In a preferred aspect of the present invention,
the material of the substrate may be a stainless steel substrate.
Further, in the chemical mechanical polishing conditioner with high
performance of the present invention, the substrate may have a
plurality of blind holes, so that the metal fixing seats may be
installed into each blind hole.
[0019] Another object of the present invention is to provide a
method for manufacturing chemical mechanical polishing conditioner
with high performance, the method for manufacturing chemical
mechanical polishing conditioner may control the figures of each
abrasive particle to achieve the optimum ability of cutting.
Besides, theses abrasive particles can avoid limitations of theirs
crystal forms based on a condition of profiles of a single abrasive
particle to obtain an optimum cutting edge angle.
[0020] To achieve the above object, the present invention is to
provide a method for manufacturing chemical mechanical polishing
conditioner with high performance, comprising: providing a
plurality of abrasive particles and a substrate having a binding
layer; providing a surface processing treatment to make the
abrasive particles have specific cutting edge angles, crystal
structures, tip heights, or tip orientations. Further, each
abrasive particle may be fixed on the substrate by the binding
layer; alternatively, each abrasive particle is disposed on the
metal fixing seat and the metal fixing seat is fixed on the
substrate by the binding layer.
[0021] In the method for manufacturing chemical mechanical
polishing conditioner with high performance, the surface processing
treatment may be a mechanical polishing method, a chemical etching
method, or a laser processing method; in an aspect of the present
invention, the surface processing treatment may be a mechanical
polishing method. Besides, in the method for manufacturing chemical
mechanical polishing conditioner with high performance, the fixing
method of the binding layer may be a ceramic sintering method, a
brazing method, an electroplating method, a metal sintering method,
or a polymer hardening method, but the present invention is not
limited thereto. In an aspect of the present invention, the fixing
method of the binding layer is the polymer hardening method.
[0022] In the method for manufacturing chemical mechanical
polishing conditioner with high performance, each abrasive particle
is disposed on the metal fixing seat, and the metal fixing seats
are fixed on the substrate by the binding layer; wherein each
abrasive particle is fixed on the metal fixing seat by the abrasive
binding layer, and the fixing method of the abrasive binding layer
may be a ceramic sintering method, a brazing method, an
electroplating method, a metal sintering method, or a polymer
hardening method. In an aspect of the present invention, the fixing
method of the abrasive binding layer is metal brazing method.
BRIEF DESCRIPTION OF THE DRAWINGS
[0023] The above and other objects, features and other advantages
of the present invention will be more clearly understood from the
following detailed description taken in conjunction with the
accompanying drawings, in which:
[0024] FIG. 1A shows a block flow diagram of a chemical mechanical
polishing conditioner with high performance of the present
invention.
[0025] FIG. 1B shows a schematic diagram of a chemical mechanical
polishing conditioner with high performance of the present
invention.
[0026] FIGS. 2A to 2D show schematic diagrams of the chemical
mechanical polishing conditioner with high performance according to
Example 2 of the present invention.
[0027] FIGS. 3A to 3D show schematic diagrams of the chemical
mechanical polishing conditioner with high performance according to
Example 3 of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[0028] Hereinafter, the actions and the effects of the present
invention will be explained in more detail via specific examples of
the invention. However, these examples are merely illustrative of
the present invention and the scope of the invention should not be
construed to be defined thereby.
Example 1
[0029] Please refer to FIGS. 1A and 1B, FIG. 1A shows a block flow
diagram of a chemical mechanical polishing conditioner with high
performance of the present invention, and FIG. 1B shows a schematic
diagram of a chemical mechanical polishing conditioner with high
performance of the present invention. Please refer to FIGS. 1A and
1B, in the chemical mechanical polishing conditioner with high
performance according to Example 1 of the present invention, first,
these abrasive particles 12 are disposed on a metal fixing seat
(not shown); wherein the these abrasive particles 12 are artificial
diamonds with particle size of 300 .mu.m. Secondly, these abrasive
particles 12 are performed a surface processing treatment, so that
these abrasive particles have specific cutting edge angle (.theta.)
of 90 degree. Please refer to FIG. 1B, theses abrasive particles
can avoid limitations of theirs crystal forms based on a condition
of figure of a single abrasive particle to obtain an optimum
cutting edge angle (.theta.), and the crystal structures of these
abrasive particles 12 are hexahedrons. The cutting edge angle
(.theta.) and the crystal structures may be randomly varied based
on the user's requirements or processing conditions. Further, these
abrasive particles 12 are separated from the metal fixing seats
(not shown); finally, a substrate 10 made of stainless steel
material and a binding layer 11 made of nickel-based metallic
brazing material are provided, and these abrasive particles 12 are
fixed on the binding layer 12 by a heat brazing method, and then
the binding layer is fixed on the substrate 10 to form a chemical
mechanical polishing conditioner 1 with high performance of the
present invention, as shown in FIG. 1B; wherein these abrasive
particles 12 are disposed by using a known diamond distribution
technique (for example, template distribution), and the spacing and
arrangement of the abrasive particles 12 are controlled by the
template (not shown in figures). Besides, these abrasive particles
12 have the same tip heights and these abrasive particles 12 all
have tips upwards to form tip directionality; alternatively, the
abrasive particles 12 are modified based on the user's requirements
or polishing processing conditions to have the same tip
directionality or different tip directionality.
Example 2
[0030] Please refer to FIG. 2, FIG. 2 shows schematic diagrams of
the chemical mechanical polishing conditioner with high performance
according to Example 2 of the present invention. The device of the
chemical mechanical polishing conditioner 20 with high performance
of Example 2 is substantially the same as the above Example 1, but
the differences are that the abrasive particles 12 of Example 1 are
fixed directly on the substrate by the binding layer 11, and the
abrasive particles 22 of Example 2 are disposed on the metal fixing
seat 23. Please refer to FIG. 2A, each abrasive particle 22 is
disposed on the metal fixing seat 23 having plane top; wherein
these abrasive particles 22 are artificial diamonds with particle
size of 800 .mu.m. Besides, the metal fixing seat 23 having the
plane top is a cylinder figure of which the external diameter is 3
mm and each abrasive particle 22 is fixed on the metal fixing seat
23 having plane top by the abrasive binding layer (not shown in
figures) made of metal brazing alloy. Further, please refer to FIG.
2B, these abrasive particles 22 are performed a surface processing
treatment, so that abrasive particles 22 have cutting edge angle
(.theta.) of 90 degree. The cutting edge angle may be randomly
varied based on the user's requirements or polishing processing
conditions. Finally, please refer to FIG. 2C, the metal fixing seat
23 with the plane top is installed into the substrate with a
plurality of blind holes, and the metal fixing seat 23 with the
plane top is fixed on the substrate 20 by the binding layer 21, as
shown in FIG. 2C; alternatively, please refer to FIG. 2D, the metal
fixing seat 23 with the plane top is installed into the substrate
with a plurality of through holes, and the metal fixing seat 23
with the plane top is fixed on the substrate 20 by the binding
layer 21 to form a chemical mechanical polishing conditioner 2 with
high performance of the present invention. Please refer to FIG. 2D,
the binding layer 21 is not present on the front of the substrate,
in an aspect of the present invention, 70 metal fixing seats 23
with the plane tops may installed into the 4 inch substrate.
Example 3
[0031] Please refer to FIGS. 3A to 3C, FIGS. 3A to 3C show
schematic diagrams of the chemical mechanical polishing conditioner
with high performance according to Example 3 of the present
invention. The device of the chemical mechanical polishing
conditioner with high performance of Example 3 is substantially the
same as the above Example 2, but the differences are that these
abrasive particles having plane bottoms are disposed on the metal
fixing seat with plane tops in Example 2, but these abrasive
particles having non-plane bottoms are disposed on the metal fixing
seat with blind holes at top, so that these abrasive particles
having non-plane bottoms are corresponded to the metal fixing seat
with blind holes at top. Please refer to FIG. 3A, first, theses
abrasive particles 32 having non-plane bottoms are disposed on the
metal fixing seat 33 with blind holes at top; wherein theses
abrasive particles 32 are artificial diamonds with particle size of
800 .mu.m, and the metal fixing seats 33 are cylinder figures of
which the external diameter is 3 mm, and each abrasive particles 32
is fixed on the metal fixing seat 33 having blind holes at top by
the abrasive binding layer (not shown in figures) made of metal
brazing alloy. Further, please refer to FIG. 3B, theses abrasive
particles 32 are performed a surface processing treatment, so that
the abrasive particles 32 have cutting edge angle (.theta.) of 90
degree; alternatively, cutting edge angle of these abrasive
particles 22 may be randomly varied based on the user's
requirements or processing conditions. Finally, please refer to
FIG. 3C, theses abrasive particles 32 with non-plane bottoms and
the metal fixing seats with blind holes at top are installed into
the substrate having a plurality of blind holes 34, and the metal
fixing seats 33 with blind holes at top are fixed on the substrate
by the binding layer 31 to form the chemical mechanical polishing
conditioner 3 with high performance of the present invention.
Alternatively, please refer to FIG. 3D, the metal fixing seat 33
having plane top is installed into the substrate having a plurality
of through holes 35, and the metal fixing seat 33 having plane top
is fixed on the substrate 30 by the binding layer 31 to form the
chemical mechanical polishing conditioner 3 with high performance
of the present invention. Please refer to FIG. 3D, the binding
layer 31 is not present on the front of the substrate; besides,
these abrasive particles 32 are controlled by the metal fixing
seats so that have these abrasive particles 32 have the same tip
heights or different tip heights.
[0032] In the chemical mechanical polishing conditioner with high
performance of the present invention, in an Example, these abrasive
particles are disposed on the substrate; and in another Example,
these abrasive particles are disposed on the metal fixing seats.
The cutting edge angles, crystal structures, tip heights or tip
orientations may be randomly varied based on the user's
requirements or processing conditions in the two Examples, thereby
controlling the figures of each abrasive particle, so that these
abrasive particles avoid hexoctahedron to manufacture a
predetermined form; therefore, an ideal cutting edge angle is
obtained to achieve an optimum polishing performance.
[0033] It should be understood that these examples are merely
illustrative of the present invention and the scope of the
invention should not be construed to be defined thereby, and the
scope of the present invention will be limited only by the appended
claims.
* * * * *