U.S. patent application number 14/173758 was filed with the patent office on 2015-08-06 for zig-zag mimo head reducing space between three sensors.
This patent application is currently assigned to HGST NETHERLANDS B.V.. The applicant listed for this patent is HGST Netherlands B.V.. Invention is credited to Hideki MASHIMA, Iwata NORIHIRO, Tsutomu YASUDA, Nobuo YOSHIDA.
Application Number | 20150221329 14/173758 |
Document ID | / |
Family ID | 53506822 |
Filed Date | 2015-08-06 |
United States Patent
Application |
20150221329 |
Kind Code |
A1 |
MASHIMA; Hideki ; et
al. |
August 6, 2015 |
ZIG-ZAG MIMO HEAD REDUCING SPACE BETWEEN THREE SENSORS
Abstract
The embodiments disclosed generally relate to a magnetic
recording head having three magnetoresistive effect elements. The
structure comprises a first magnetoresistive effect element on a
lower magnetic shield layer. Additionally, two lower electrodes are
disposed on the two sides of the first magnetoresistive effect
element. A second magnetoresistive effect element is disposed on a
lower electrode while a third magnetoresistive effect element on
another lower electrode. An upper magnetic shield layer is disposed
between the second magnetoresistive effect element and the third
magnetoresistive effect element. The upper magnetic shield also
serves as an electrode of the first magnetoresistive effect
element.
Inventors: |
MASHIMA; Hideki;
(Odawara-Shi, JP) ; YOSHIDA; Nobuo;
(Hiratsuka-Shi, JP) ; NORIHIRO; Iwata;
(Odawara-Shi, JP) ; YASUDA; Tsutomu; (Odawara-Shi,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
HGST Netherlands B.V. |
Amsterdam |
|
NL |
|
|
Assignee: |
HGST NETHERLANDS B.V.
Amsterdam
NL
|
Family ID: |
53506822 |
Appl. No.: |
14/173758 |
Filed: |
February 5, 2014 |
Current U.S.
Class: |
360/315 |
Current CPC
Class: |
G11B 5/3954 20130101;
G11B 5/3948 20130101; G11B 5/3977 20130101; G11B 5/3951 20130101;
G11B 5/3163 20130101; G11B 5/398 20130101; G11B 5/3912 20130101;
G11B 5/3929 20130101 |
International
Class: |
G11B 5/39 20060101
G11B005/39 |
Claims
1. A magnetic recording head, comprising: a first magnetoresistive
effect element disposed on a first lower electrode; a second lower
electrode disposed adjacent a first side of the first
magnetoresistive effect element; a third lower electrode disposed
adjacent a second side of the first magnetoresistive effect
element; a second magnetoresistive effect element disposed on the
second lower electrode; a third magnetoresistive effect element
disposed on the third lower electrode; and a first upper electrode
disposed between the second magnetoresistive effect element and the
third magnetoresistive effect element.
2. The magnetic recording head of claim 1, further comprising a
first insulating layer disposed on the first lower electrode, and
between the first side of the first magnetoresistive effect element
and the second lower electrode.
3. The magnetic recording head of claim 2, wherein the first
insulating layer is further disposed between the second side of the
first magnetoresistive effect element and the third lower
electrode.
4. The magnetic recording head of claim 3, further comprising a
second insulating layer disposed between the second
magnetoresistive effect element and the first upper electrode.
5. The magnetic recording head of claim 4, wherein the second
insulating layer is further disposed between the third
magnetoresistive effect element and the first upper electrode.
6. The magnetic recording head of claim 5, wherein the first upper
electrode is disposed on the first magnetoresistive effect
element.
7. The magnetic recording head of claim 6, wherein the first upper
electrode is disposed on the second magnetoresistive effect
element.
8. The magnetic recording head of claim 7, wherein the first upper
electrode is disposed on the third magnetoresistive effect
element.
9. The magnetic recording head of claim 8, wherein the first upper
electrode comprises Ir, Ru, W, Au, Ag, Cu, Mo, Ni, Co, or Fe, a
metal alloy that includes these metals, or a stacked film that
includes these metals.
10. The magnetic recording head of claim 9, wherein the second
lower electrode and the third lower electrode each comprise Ir, Ru,
W, Au, Ag, Cu, Mo, Ni, Co, or Fe, a metal alloy that includes these
metals, or a stacked film that includes these metals.
11. The magnetic recording head of claim 1, further comprising: a
second upper electrode coupled to the second magnetoresistive
effect element; and a third upper electrode coupled to the third
magnetoresistive effect element, wherein an insulating layer is
disposed between the first upper electrode and both the second
magnetoresistive effect element and the third magnetoresistive
effect element, and wherein the first upper electrode is disposed
on the first magnetoresistive effect element.
12-20. (canceled)
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] Embodiments disclosed herein generally relate to a current
perpendicular to plane (CPP) type magnetoresistive effect head as a
magnetic reproduction head, and a magnetic recording and
reproduction device in which the CPP type magnetoresistive effect
head is installed.
[0003] 2. Description of the Related Art
[0004] Magnetoresistive effect magnetic heads are used as sensors
for reproducing magnetic information recorded on magnetic media in
high density magnetic recording devices such as hard disks, and is
a part that greatly affects the performance of magnetic recording
technology.
[0005] In recent years, magnetic reproduction heads are used that
use the so-called giant magnet resistive effect (hereafter referred
to as GMR), and so on, namely the magnetoresistive effect of a
multilayer film in which ferromagnetic metal layers are stacked
with nonmagnetic intermediate layers therebetween. The first GMR
heads used were the current in plane (CIP) type in which an
electrical signal flows parallel within the plane of a sensor film.
In order to increase the recording density, the tunneling magnet
resistive effect (TMR) head and the current perpendicular to a
plane giant magnet resistive effect (GMR) head were developed
considering the advantage of high output with narrow tracks and
narrow gaps, so in recent years TMR heads have become the
mainstream in magnetic reproduction heads. Unlike the conventional
GMR head, the TMR head and the CPP-GMR head are CPP type heads in
which electrical signals flow in the direction perpendicular to the
film surface, and this is the major difference from CIP type heads
in which the electrical signal flows parallel within the plane of
the sensor film.
[0006] In order to respond to the demand for even higher density
recording in recent years, the effective track width of
magnetoresistive sensors has been made narrower, but this has
caused the element resistance to increase, the noise to increase,
and sensitivity to reduce, and has produced the separate issue that
it is difficult to increase the sensitivity. In order to further
increase the density three element type magnetic heads have been
proposed as shown in FIG. 1.
[0007] The magnetic head in FIG. 1 includes a lower
shield/electrode layer 101 having two magnetoresistive effect
elements 113, 114 disposed thereover. An insulating layer 4 is
disposed over the lower shield layer 101 and along a portion of the
two magnetoresistive effect elements 113, 114. Over the insulating
layer 104, an element side layer 110 is present. The element side
layer 110 is also disposed between the two magnetoresistive effect
elements 113, 114. A mask pattern 118 is formed over the element
side layer, insulating layer 104 and magnetoresistive effect
element 113 while an upper electrode forming film 119 is formed
over the element side layer 110, insulating layer 104 and
magnetoresistive effect element 114. Another insulating layer 104
is formed over the mask pattern 118, exposed element side layer 110
and upper electrode forming film 119. A second upper electrode 120
is then formed over the upper electrode forming film 119 and the
element side layer 110. A magnetoresistive effect element 102,
magnetic domain control film 117 and upper shield layer 112 are
formed thereover.
[0008] The advantage of three element magnetic heads is that by
producing a magnetic head having several elements whose size is
larger than the bit size of the medium, it is possible to read the
bit data from the differences of the plurality of signals obtained.
Because the element size can be larger than for a single element,
noise can be controlled and sensitivity increased.
[0009] Each of the elements of the three element type reproduction
element can be produced at a size that is larger than the recording
bit size, but in order to extract the signal it is necessary to
provide wiring layers between the first magnetoresistive effect
element and the first magnetoresistive effect element and the
second magnetoresistive effect element, the third magnetoresistive
effect element. Therefore if terminals are provided, the distance
between each element is increased and the distance between shields
is increased.
[0010] It is an object of the disclosure to reduce the vertical
distance between sensors in a three element type reproduction
element, to reduce the distance between shields, and to reduce the
lead gap.
SUMMARY OF THE INVENTION
[0011] The embodiments disclosed generally relate to a magnetic
recording head having three magnetoresistive effect elements. The
structure comprises a first magnetoresistive effect element on a
lower magnetic shield layer. Additionally, two lower electrodes are
disposed on the two sides of the first magnetoresistive effect
element. A second magnetoresistive effect element is disposed on a
lower electrode while a third magnetoresistive effect element on
another lower electrode. An upper magnetic shield layer is disposed
between the second magnetoresistive effect element and the third
magnetoresistive effect element. The upper magnetic shield also
serves as an electrode of the first magnetoresistive effect
element.
[0012] In one embodiment, a magnetic recording head comprises a
first magnetoresistive effect element disposed on a first lower
electrode; a second lower electrode disposed adjacent a first side
of the first magnetoresistive effect element; a third lower
electrode disposed adjacent a second side of the first
magnetoresistive effect element; a second magnetoresistive effect
element disposed on the second lower electrode; a third
magnetoresistive effect element disposed on the third lower
electrode; and a first upper electrode disposed between the second
magnetoresistive effect element and the third magnetoresistive
effect element.
[0013] In another embodiment, a magnetic recording head comprises a
lower magnetic shield; a first upper electrode; and a first
magnetoresistive effect element, a second magnetoresistive
effective element and a third magnetoresistive effect element
disposed between the lower magnetic shield and the first upper
element. The second magnetoresistive effect element is disposed on
the lower magnetic shield; the third magnetoresistive effect
element is disposed on the lower magnetic shield; a first lower
electrode is disposed on the lower magnetic shield and between the
second magnetoresistive effect element and the third
magnetoresistive effect element; the first magnetoresistive effect
element is disposed on the first lower electrode; and the first
upper electrode is disposed on the first magnetoresistive effect
element.
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] So that the manner in which the above recited features can
be understood in detail, a more particular description of the
invention, briefly summarized above, may be had by reference to
embodiments, some of which are illustrated in the appended
drawings. It is to be noted, however, that the appended drawings
illustrate only typical embodiments of this invention and are
therefore not to be considered limiting of its scope, for the
invention may admit to other equally effective embodiments.
[0015] FIG. 1 is a schematic illustration of the configuration of a
CPP magnetic recording head.
[0016] FIG. 2 is a schematic illustration of the configuration of a
CPP magnetic recording head according to one embodiment.
[0017] FIGS. 3A-3L are schematic illustrations of a CPP magnetic
recording head at various stages of manufacturing according to the
first embodiment.
[0018] FIGS. 4A-4M are schematic illustrations of a CPP magnetic
recording head at various stages of manufacturing according to the
second embodiment.
[0019] FIGS. 5A-5M are schematic illustrations of a CPP magnetic
recording head at various stages of manufacturing according to the
first embodiment.
[0020] To facilitate understanding, identical reference numerals
have been used, where possible, to designate identical elements
that are common to the figures. It is contemplated that elements
disclosed in one embodiment may be beneficially utilized on other
embodiments without specific recitation.
DETAILED DESCRIPTION
[0021] In the following, reference is made to embodiments of the
invention. However, it should be understood that the invention is
not limited to specific described embodiments. Instead, any
combination of the following features and elements, whether related
to different embodiments or not, is contemplated to implement and
practice the invention. Furthermore, although embodiments of the
invention may achieve advantages over other possible solutions
and/or over the prior art, whether or not a particular advantage is
achieved by a given embodiment is not limiting of the invention.
Thus, the following aspects, features, embodiments and advantages
are merely illustrative and are not considered elements or
limitations of the appended claims except where explicitly recited
in a claim(s). Likewise, reference to "the invention" shall not be
construed as a generalization of any inventive subject matter
disclosed herein and shall not be considered to be an element or
limitation of the appended claims except where explicitly recited
in a claim(s).
[0022] The embodiments disclosed generally relate to a magnetic
recording head having three magnetoresistive effect elements. The
structure comprises a first magnetoresistive effect element on a
lower magnetic shield layer. Additionally, two lower electrodes are
disposed on the two sides of the first magnetoresistive effect
element. A second magnetoresistive effect element is disposed on a
lower electrode while a third magnetoresistive effect element on
another lower electrode. An upper magnetic shield layer is disposed
between the second magnetoresistive effect element and the third
magnetoresistive effect element. The upper magnetic shield also
serves as an electrode of the first magnetoresistive effect
element.
[0023] FIG. 2 shows a configuration in principle of the disclosed
embodiments. In the structure, the second lower electrode 215 and
the third lower electrode 216 are provided on the two sides of the
first magnetoresistive effect element 102, and the upper shield
layer 112 is used as a common electrode for each of the
magnetoresistive effect elements 102, 113, 114, so it is possible
to reduce the distance between the three elements 102, 113, 114,
and it is possible to reduce the distance between the lower
magnetic shield layer 101 and the upper magnetic shield layer 112,
so it is possible to have a narrow lead gap.
[0024] In general, the method of manufacturing the reproduction
magnetic head includes: forming a lower magnetic shield layer 101;
forming a magnetoresistive effect film 302 on the lower magnetic
shield layer 101; forming a track pattern mask 303 on the
magnetoresistive film 302; etching the magnetoresistive effect film
302 to form the magnetoresistive effect element 102; stacking an
insulating layer 104 and lower electrode film 305 while leaving the
track pattern mask 303 in place; removing the track pattern mask
303 and separating a second lower electrode 215 and a third lower
electrode 216; forming a second magnetoresistive effect film 306 on
the second lower electrode 215 and the third lower electrode 216;
forming a second track pattern mask 308 on the second
magnetoresistive effect film 306; etching the second
magnetoresistive effect film 306 to form second and third
magnetoresistive effect elements 113, 114; stacking a second
insulating layer 209 and an element side layer 110 while leaving
the track pattern mask 308 in place; forming a mask 311 for forming
an upper shield; exposing a first magnetoresistive effect element
102 by removing a part of the second insulating layer that is
exposed using the mask 311 for forming an upper shield as the mask;
stacking an upper magnetic shield layer 112; and removing the mask
111 for forming the upper shield 112.
FIRST EMBODIMENT
[0025] Next, the process of manufacturing the reproduction magnetic
head according to a first embodiment is explained with reference to
FIGS. 3A-3L. As shown in FIG. 3A, a lower magnetic shield layer 101
made from NiFe is provided on an Al.sub.2O.sub.3--TiC wafer that
forms a slider parent material, with an Al.sub.2O.sub.3 film
therebetween (neither shown on the drawings). Next a
magnetoresistive effect film 302 having a free layer, a barrier
layer, and a fixed layer is formed using the sputtering method. The
magnetoresistive effect film 302 is made from, for example, a 1 nm
Ta substrate layer, a 5 nm IrMn antiferromagnetic layer, a 2 nm
CoFeB fixed layer, a tunnel insulation layer made from MgO, and a
free layer made from a stacked film of 5 nm of CoFeB and 2 nm of
NiFe.
[0026] As shown in FIG. 3B, a track pattern mask 303 is formed on
the magnetoresistive effect film 302 so as to provide at track
width of 5 to 50 nm, for example 20 nm. Next, the magnetoresistive
effect film 302 is etched using the track pattern mask 303 as a
mask by Ar ion milling or RIE, to expose the lower shield layer 101
and form the first magnetoresistive effect element 102.
[0027] As shown in FIG. 3C, an insulating layer 104 is deposited as
is a lower electrode 305. A material with low electrical
resistivity may be used in the lower electrode 305. The lower
electrode 305 and be combined with a side shield (not shown) in
which case a soft magnetic material with a retention force of 3 Oe
or less, a metal alloy including a soft magnetic material, or a
stacked film that includes a soft magnetic material is preferable.
The lower electrode may be combined with a magnetic domain control
film; in which case a ferromagnetic material with retention force
of 500 Oe or higher, a metal alloy that includes a ferromagnetic
material, or a stacked film that includes a ferromagnetic material
is preferable. In the embodiment shown in FIG. 3C, a lower
electrode 305 made from CoPt having a thickness between 5 and 100
nm, for example, 13 nm, is deposited using the long throw
sputtering method (LTS) which has excellent straightness.
[0028] Next, the track pattern mask 303 is removed by lifting off
or by chemical mechanical polishing (CMP) as shown in FIG. 3D. The
lower electrode 305 is now divided to form the second lower
electrode 215 and the third lower electrode 216. A second
magnetoresistive effect film 306 is formed having a free layer, a
barrier layer, and a fixed layer by the sputtering method as shown
in FIG. 3E. The magnetoresistive effect film 306 is made from, for
example, a 1 nm Ta substrate layer, a 5 nm IrMn antiferromagnetic
layer, a 2 nm CoFeB fixed layer, a tunnel insulation film made from
MgO, and a free layer made from a stacked film of 5 nm CoFeB, 2 nm
NiFe. A CMP stopper layer 307 is formed. The CMP stopper layer 307
is preferably any of the metal materials Ta, Ti, W, Nb, V, Zr, and
Ir, or, a metal alloy that includes these metals, or, an oxide that
includes these metals, or, a nitride that includes these metals,
or, any of SiC, SiN, and DLC.
[0029] Next, a second track pattern mask 308 is formed on the CMP
stopper layer 307 in which the track width is 5 to 30 nm, for
example 20 nm, by spacer type double patterning using an ArF liquid
immersion light exposure machine as shown in FIG. 3F. An ArF light
exposure machine or an ArF liquid immersion light exposure machine
may be used for forming the track mask 308. The light exposure
machine may use normal light exposure and double patterning as the
light exposure method, using an ArF light exposure machine or an
ArF liquid immersion light exposure machine, or extreme ultraviolet
lithography (EUV).
[0030] Next, the second magnetoresistive effect element 113 and the
third magnetoresistive effect element 114 are formed by Ar ion
milling or RIE using the second track patterning mask 308 as the
mask, by etching the second magnetoresistive effect film 306 and
exposing the second lower electrode 215 and the third lower
electrode 216. Next, a second insulation film 209 is formed from
Al.sub.2O.sub.3 with a thickness of 1 to 30 nm, for example, 2 nm,
using the sputtering method as shown in FIG. 3G. Then, an element
side layer 110 is deposited. The element side layer 110 may be
combined with a side shield; in which case a soft magnetic material
with a retention force of 3 Oe or less, a metal alloy that includes
a soft magnetic material, or a stacked film that includes a soft
magnetic material is preferable. The element side layer 110 may be
combined with a magnetic domain control layer in which case a
ferromagnetic material with a retention force of 500 Oe or higher,
a metal alloy that includes a ferromagnetic material, or a stacked
film that includes a ferromagnetic material is preferable. Here,
after forming an insulating film 209 made from Al.sub.2O.sub.3 with
a thickness of 1 to 30 nm, for example 2 nm, using the sputtering
method, for example a lower electrode 305 made from CoPt with a
thickness of 5 to 100 nm, for example 13 nm, is deposited using the
long throw sputtering method (LTS), which has excellent
straightness.
[0031] Next, a mask 311 for an upper shield is formed as shown in
FIG. 3H. A portion of the second insulation layer 209 and a portion
of the element side layer 110 are exposed by Ar ion milling or RIE
using the mask 311 for the upper shield as a mask, to expose the
first magnetoresistive effect element 102 as shown in FIG. 3I.
[0032] Next, an upper shield layer 112 made from NiFe is deposited
by sputtering or by plating as shown in FIG. 3J. Then, the second
insulation layer 209, the element side layer magnetic domain
control film 110, the mask 311 for forming the upper shield, and
the upper shield layer 112 deposited on the second track patterning
mask 308 are removed by performing a flattening process by CMP
using the CMP stopper layer 307 as a CMP stopper as shown in FIG.
3K. The CMP stopper layer 307 and a portion of the element side
layer 110 are removed by Ar ion milling or RIE, then the upper
magnetic shield layer 112 is provided using the sputtering method,
to complete the basic configuration of the magnetic reproduction
head according to the first embodiment as shown in FIG. 3L.
SECOND EMBODIMENT
[0033] Next, a manufacturing process for a magnetic reproduction
head according to a second embodiment is explained with reference
to FIGS. 4A-4M. First a lower magnetic shield layer 101 made from
NiFe is provided on an Al.sub.2O.sub.3--TiC wafer that forms a
slider parent material, with an Al.sub.2O.sub.3 film therebetween
(neither shown on the drawings). Then, a magnetoresistive effect
film 402 having a free layer, a barrier layer, and a fixed layer is
formed using the sputtering method as shown in FIG. 4A. The
magnetoresistive effect film 402 is made from, for example, a 1 nm
Ta substrate layer, a 5 nm IrMn antiferromagnetic layer, a 2 nm
CoFeB fixed layer, a tunnel insulation film made from MgO, and a
free layer made from a stacked film of 5 nm of CoFeB and 2 nm of
NiFe.
[0034] Next, a track pattern mask 403 is formed on the
magnetoresistive effect film 402 so as to provide a track width of
5 to 50 nm, for example 20 nm as shown in FIG. 4B. Then, the
magnetoresistive effect film 402 is etched using the track pattern
mask 403 as a mask by Ar ion milling or RIE, to expose the lower
shield layer 101 and form the first magnetoresistive effect element
102. A lower electrode 405 is deposited wherein a material with low
electrical resistivity may be used. Also the lower electrode 405
can be combined with a side shield; in which case a soft magnetic
material with retention force of 3 Oe or less, a metal alloy
including a soft magnetic material, or a stacked film that includes
a soft magnetic material is preferable. Additionally, the lower
electrode 405 may be combined with a magnetic domain control film;
in which this case a ferromagnetic material with retention force of
500 Oe or higher, a metal alloy that includes a ferromagnetic
material, or a stacked film that includes a ferromagnetic material
is preferable. As shown in FIG. 4C, a lower electrode 405 made from
CoPt having a thickness between 5 and 100 nm, for example 13 nm, is
deposited using the long throw sputtering method (LTS) which has
excellent straightness as shown in FIG. 4C.
[0035] Next, the track pattern mask 403 is removed by lifting off
or by chemical mechanical polishing (CMP) as shown in FIG. 4D such
that the lower electrode 405 is divided to form the second lower
electrode 215 and the third lower electrode 216. Thereafter, a
second magnetoresistive effect film 406 is formed having a free
layer, a barrier layer, and a fixed layer by the sputtering method.
The magnetoresistive effect film 406 is made from, for example, a 1
nm Ta substrate layer, a 5 nm IrMn antiferromagnetic layer, a 2 nm
CoFeB fixed layer, a tunnel insulation film made from MgO, and a
free layer made from a stacked film of 5 nm CoFeB, 2 nm NiFe. A CMP
stopper layer 407 then formed on the magnetoresistive effect film
406 as shown in FIG. 4E. The CMP stopper layer 407 is preferably
any of the metal materials Ta, Ti, W, Nb, V, Zr, Ir, or, a metal
alloy that includes these metals, or, an oxide that includes these
metals, or, a nitride that includes these metals, or, any of SiC,
SiN, and DLC.
[0036] Next, a track wide pattern mask 424 is formed on the CMP
stopper layer 407 in which the track width is 50 to 200 nm, for
example 100 nm as shown in FIG. 4F.
[0037] Next, the second magnetoresistive effect film 406 is etched
by Ar ion milling or RIE using the track wide pattern mask 424 as a
mask, to expose the second lower electrode 215 and the third lower
electrode 216. Then, a second insulation film 209 is formed from
Al.sub.2O.sub.3 with a thickness of 1 to 30 nm, for example 2 nm,
using the sputtering method. Thereafter, an element side layer 110
is deposited. The element side layer 110 may be combined with a
side shield; in which case a soft magnetic material with a
retention force of 3 Oe or less, a metal alloy that includes a soft
magnetic material, or a stacked film that includes a soft magnetic
material is preferable. Additionally, the element side layer 110
may be combined with a magnetic domain control layer; in which case
a ferromagnetic material with a retention force of 500 Oe or
higher, a metal alloy that includes a ferromagnetic material, or a
stacked film that includes a ferromagnetic material is preferable.
Here, after forming an insulating film 209 made from
Al.sub.2O.sub.3 with a thickness of 1 to 30 nm, for example 2 nm,
using the sputtering method, side layer 110 made from CoPt with a
thickness of 5 to 100 nm, for example 13 nm, is deposited using the
long throw sputtering method (LTS), which has excellent
straightness as shown in FIG. 4G.
[0038] Thereafter, the second insulation layer 209 and the element
side layer magnetic domain control film 110 deposited on the track
wide pattern mask 424 are removed by carrying out a flattening
process by CMP using the CMP stopper layer 407 as a CMP stopper,
and flattening the surface as shown in FIG. 4H.
[0039] Next, a pattern mask 418 with a mask width of 20 to 100 nm,
for example 30 nm, is formed on the CMP stopper layer 407 as shown
in FIG. 4I. After removing a portion of the exposed CMP stopper
layer 407 and a portion of the element side layer 110 by Ar ion
milling using the pattern mask 418 as a mask, an upper electrode
forming film 419 is formed covering the mask pattern 418.
Preferably, the upper electrode forming film 419 is a material with
low electrical resistivity.
[0040] Then, the mask pattern 418 is removed by lifting off or by
chemical mechanical polishing (hereafter referred to as CMP) as
shown in FIG. 4J. The upper electrode forming film 419 is divided
to form the second upper electrode 420 and the third upper
electrode 421.
[0041] Next, a third insulation layer 422 made from Al.sub.2O.sub.3
is formed on the second upper electrode 420 and the third upper
electrode 421 using the sputtering method and having a thickness of
1 to 30 nm, for example 2 nm as shown in FIG. 4K. Then, a trench
pattern 423 is formed over the third insulation layer 422 as shown
in FIG. 4L. The third insulation layer 422 is removed by Ar ion
milling using a trench pattern 423 as a mask, to expose the first
magnetoresistive effect element 102.
[0042] After removing the trench pattern 423 by lifting off, an
upper magnetic shield layer 112 is provided by the sputtering
method, thereby completing the basic configuration of the magnetic
reproduction head according to the second embodiment as shown in
FIG. 4M.
THIRD EMBODIMENT
[0043] Next, a process of manufacturing a magnetic reproduction
head according to a third embodiment is explained with reference to
FIGS. 5A-5M. First, a lower magnetic shield layer 101 made from
NiFe is provided on an Al.sub.2O.sub.3--TiC wafer that forms a
slider parent material, with an Al.sub.2O.sub.3 film therebetween
(neither shown on the drawings). Next a second magnetoresistive
effect film 506 having a free layer, a barrier layer, and a fixed
layer is formed using the sputtering method as shown in FIG. 5A.
The magnetoresistive effect film 506 is made from, for example, a 1
nm Ta substrate layer, a 5 nm IrMn antiferromagnetic layer, a 2 nm
CoFeB fixed layer, a tunnel insulation layer made from MgO, and a
free layer made from a stacked film of 5 nm of CoFeB and 2 nm of
NiFe. Then, a CMP stopper layer 507 is formed. The CMP stopper
layer 507 is preferably any of the metal materials Ta, Ti, W, Nb,
V, Zr, Ir, or, a metal alloy that includes these metals, or, an
oxide that includes these metals, or, a nitride that includes these
metals, or, any of SiC, SiN, and DLC.
[0044] Next, a track wide pattern mask 524 is formed on the CMP
stopper layer 507 in which the track width is 50 to 200 nm, for
example 100 nm, as shown in FIG. 5B. The second magnetoresistive
effect film 506 is etched by Ar ion milling or RIE using the using
the track wide pattern mask 524 as a mask, to expose the lower
magnetic shield layer 101. A second insulation film 509 is formed
from Al.sub.2O.sub.3 with a thickness of 1 to 30 nm, for example 2
nm, using the sputtering method. The element side layer 110 is
deposited. The element side layer 110 may be combined with a side
shield; in which case a soft magnetic material with a retention
force of 3 Oe or less, a metal alloy that includes a soft magnetic
material, or a stacked film that includes a soft magnetic material
is preferable. Additionally, the element side layer 110 may be
combined with a magnetic domain control layer; in which case a
ferromagnetic material with a retention force of 500 Oe or higher,
a metal alloy that includes a ferromagnetic material, or a stacked
film that includes a ferromagnetic material is preferable. After
forming the insulating film 509 made from Al.sub.2O.sub.3 with a
thickness of 1 to 30 nm, for example 2 nm, using the sputtering
method, for example an element side layer 110 made from CoPt with a
thickness of 5 to 100 nm, for example 13 nm, is deposited using the
long throw sputtering method (LTS), which has excellent
straightness as shown in FIG. 5C.
[0045] The second insulation layer 509 and the element side layer
magnetic domain control film 110 deposited on the track wide
pattern mask 524 are removed by carrying out a flattening process
by CMP using the CMP stopper layer 507 as a CMP stopper, and
flattening the surface as shown in FIG. 5D. A pattern mask 518 with
a mask width of 20 to 100 nm, for example 30 nm, is formed on the
CMP stopper layer 507. After removing a portion of the exposed CMP
stopper layer 507 and a portion of the element side layer 110 by Ar
ion milling using the pattern mask 518 as a mask, an upper
electrode forming film 519 is formed covering the mask pattern 518
as shown in FIG. 5E. The upper electrode forming film 519 is a
material with low electrical resistivity.
[0046] The mask pattern 518 is removed by lifting off or by
chemical mechanical polishing (hereafter referred to as CMP) as
shown in FIG. 5F. The upper electrode forming film 519 is divided
to form the second upper electrode 520 and the third upper
electrode 521.
[0047] A third insulation layer 522 made from Al.sub.2O.sub.3 is
formed on the second upper electrode 520 and the third upper
electrode 521 using the sputtering method and having a thickness of
1 to 30 nm, for example 2 nm as shown in FIG. 5G. Thereafter, a
trench pattern 523 is formed as shown in FIG. 5H. The third
insulation layer 522 is removed by Ar ion milling using the trench
pattern 523 as a mask, to expose the lower shield 101.
[0048] After removing the trench pattern 523 by lifting off, a
first lower electrode 525 is formed as shown in FIG. 5I. The first
lower electrode 525 may be combined with a magnetic shield; in
which case a soft magnetic material with retention force of 3 Oe
are less, a metal alloy that contains a soft magnetic material, or
a stacked film that contains a soft magnetic material is
preferable. In the embodiment shown in FIG. 5I, a film of NiFe with
thickness of 1 to 50 nm, for example 30 nm, is formed using the
sputtering method.
[0049] Next, a flattening process is carried out by ion milling or
CMP, and then a magnetoresistive effect film 502 having a free
layer, a barrier layer, and a fixed layer is formed using the
sputtering method as shown in FIG. 5J. The magnetoresistive effect
film 502 is made from, for example, a 1 nm Ta substrate layer, a 5
nm IrMn antiferromagnetic layer, a 2 nm CoFeB fixed layer, a tunnel
insulation film made from MgO, and a free layer made from a stacked
film of 5 nm CoFeB, 2 nm NiFe.
[0050] Then, a track pattern mask 503 is formed on the
magnetoresistive effect film 502 provided with a track width of 5
to 50 nm, for example 20 nm. The magnetoresistive effect film 502
is etched by Ar ion milling or RIE using the track pattern mask 503
as a mask, to expose the second upper electrode 520 and the third
upper electrode 521 and form the first magnetoresistive effect
element 102. Thereafter, a lower electrode 505 is deposited. The
material may be a low electrical resistivity material.
Additionally, the lower electrode 505 may be combined with a side
shield; in which case a soft magnetic material having a retention
force of 3 Oe or less, a metal alloy that includes a soft magnetic
material, or a stacked film that includes a soft magnetic material
is preferable. The lower electrode 505 may also be combined with a
magnetic domain control film; in which case a ferromagnetic
material having a retention force of 500 Oe or higher, a metal
alloy that includes a ferromagnetic material, or a stacked film
that includes a ferromagnetic material is preferable. In the
embodiment shown in FIG. 5K, the lower electrode 505 is made from
CoPt having a thickness of 5 to 100 nm, for example 13 nm, is
deposited using the long throw sputtering method (LTS) which has
excellent straightness.
[0051] Next, the track pattern mask 503 is removed by lifting off
or by chemical mechanical polishing (hereafter referred to as CMP)
as shown in FIG. 5L. The lower electrode 505 is divided to form the
second lower electrode 215 and the third lower electrode 216.
Finally, the upper magnetic shield layer 112 is provided using the
sputtering method, to complete the basic configuration of the
magnetic reproduction head according to the third embodiment as
shown in FIG. 5M
[0052] As shown in FIGS. 2, 3L, 4M and 5M, the magnetoresistive
effect elements are closer together and thus, the vertical distance
between sensors is reduced, the distance between shields is
reduced, and the lead gap is reduced.
[0053] While the foregoing is directed to exemplary embodiments,
other and further embodiments of the invention may be devised
without departing from the basic scope thereof, and the scope
thereof is determined by the claims that follow.
* * * * *