U.S. patent application number 14/417229 was filed with the patent office on 2015-07-30 for display unit, method of manufacturing the same, and method of manufacturing electronic apparatus.
This patent application is currently assigned to Sony Corporation. The applicant listed for this patent is Sony Corporation. Invention is credited to Takashi Sakairi.
Application Number | 20150214508 14/417229 |
Document ID | / |
Family ID | 49029149 |
Filed Date | 2015-07-30 |
United States Patent
Application |
20150214508 |
Kind Code |
A1 |
Sakairi; Takashi |
July 30, 2015 |
DISPLAY UNIT, METHOD OF MANUFACTURING THE SAME, AND METHOD OF
MANUFACTURING ELECTRONIC APPARATUS
Abstract
There is provided a method of manufacturing a display unit. The
method includes: forming a plurality of first electrodes (14);
forming a functional layer (15) that covers from the first
electrode (14) to an inter-electrode region; and locally applying
an energy ray (E) to the functional layer (15) to form a
dis-connecting section or a high-resistance section (15D) in the
functional layer in the inter-electrode region.
Inventors: |
Sakairi; Takashi; (Kanagawa,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Sony Corporation |
Tokyo |
|
JP |
|
|
Assignee: |
Sony Corporation
Tokyo
JP
|
Family ID: |
49029149 |
Appl. No.: |
14/417229 |
Filed: |
July 19, 2013 |
PCT Filed: |
July 19, 2013 |
PCT NO: |
PCT/JP2013/004418 |
371 Date: |
January 26, 2015 |
Current U.S.
Class: |
257/40 ;
438/34 |
Current CPC
Class: |
H01L 51/0023 20130101;
H01L 51/006 20130101; H01L 2251/301 20130101; H01L 2251/303
20130101; H01L 27/3244 20130101; H01L 51/5253 20130101; H01L
51/0014 20130101; H01L 51/5012 20130101; H01L 51/5221 20130101;
H01L 51/56 20130101; H01L 27/3246 20130101; H01L 51/5088 20130101;
H01L 51/0081 20130101; H01L 27/322 20130101; H01L 51/0015 20130101;
H01L 51/5206 20130101; H01L 51/005 20130101; H01L 51/0059
20130101 |
International
Class: |
H01L 51/56 20060101
H01L051/56; H01L 51/00 20060101 H01L051/00; H01L 27/32 20060101
H01L027/32; H01L 51/52 20060101 H01L051/52; H01L 51/50 20060101
H01L051/50 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 2, 2012 |
JP |
2012-172181 |
Claims
1. A method of manufacturing a display unit, the method comprising:
forming a plurality of first electrodes; forming a functional layer
that covers from the first electrode to an inter-electrode region;
and locally applying an energy ray to the functional layer to form
a disconnecting section or a high-resistance section in the
functional layer in the inter-electrode region.
2. The method according to claim 1, wherein a barrier is provided
in the inter-electrode region, and the energy ray is applied to the
functional layer covering the barrier.
3. The method according to claim 2, wherein the energy ray is
applied to a surface of the first electrode at an angle of less
than about 90 degrees.
4. The method according to claim 2, wherein the functional layer is
a hole injection layer between the first electrode and an
light-emitting layer.
5. The method according to claim 2, wherein the functional layer is
a light-emitting layer and a hole injection layer between the
light-emitting layer and the first electrode.
6. The method according to claim 5, wherein a second electrode that
is paired with the first electrode is formed with the functional
layer in between after the disconnecting section or the
high-resistance section is provided in the functional layer.
7. The method according to claim 6, wherein the energy ray is
applied to form the disconnecting section and to allow a surface of
a terminal embedded in the barrier to be exposed, and the terminal
is electrically connected to the second electrode.
8. The method according to claim 2, wherein the energy ray is
applied to form the disconnecting section and to shave the barrier,
and a second electrode that is paired with the first electrode is
formed with the functional layer therebetween.
9. The method according to claim 1, wherein the energy ray is
applied to form a gap between the first electrodes adjacent to each
other.
10. The method according to claim 1, wherein one of an ion beam, an
atomic beam, a molecular beam, an electron beam, and a laser beam
is used as the energy ray.
11. A method of manufacturing an electronic apparatus, the method
including manufacturing a display unit, the manufacturing the
display unit comprising: forming a plurality of first electrodes;
forming a functional layer that covers from the first electrode to
an inter-electrode region; and locally applying an energy ray to
the functional layer to form a disconnecting section or a
high-resistance section in the functional layer in the
inter-electrode region.
12. A display unit comprising: a plurality of first electrodes; and
a functional layer covering from the first electrode to an
inter-electrode region, and having a disconnecting section or a
high-resistance section in the inter-electrode region, the
disconnecting section or the high-resistance section being formed
by local application of an energy ray.
13. The display unit according to claim 12, further comprising: a
barrier provided in the inter-electrode region; a second electrode
facing the first electrode with the functional layer in between;
and a terminal embedded in the barrier and electrically connected
to the second electrode.
Description
TECHNICAL FIELD
[0001] The technology relates to a display unit including
functional layers such as a hole injection layer and a
light-emitting layer, a method of manufacturing the display unit,
and a method of manufacturing an electronic apparatus.
BACKGROUND ART
[0002] In recent years, a display using an organic
electroluminescence (EL) device has attracted attention as one of
flat panel displays. The display is a self-luminous type, and thus
has characteristics of wide viewing angle and low power
consumption. In addition, the organic EL device is considered to
have sufficient responsiveness with respect to a high-speed video
signal with high definition, and is being developed toward the
practical use thereof.
[0003] The configuration of the organic EL device in which, for
example, first electrodes, an organic layer including a
light-emitting layer, and a second electrode are stacked in order
is known. In a region between the first electrodes adjacent to each
other (an inter-electrode region), a barrier formed of an
insulating film is provided. As a method of forming the organic
layer, there are two methods mainly, that is, a method in which
light-emitting layers of respective colors of red, green, and blue
are individually evaporated for each device with use of an
evaporation mask, and a method in which light-emitting layers of
respective colors of red, green and blue are stacked and formed to
be common to devices without using an evaporation mask. The latter
method is advantageous in terms of high definition and improvement
in aperture ratio.
[0004] In the latter method, however, leakage of a drive current
easily occurs between adjacent devices through the organic layer
(in particular, a hole injection layer). Due to the leakage
current, a non-light-emitting device emits light caused by
influence from the light-emitting device, which results in color
mixture and lowering in light emission efficiency.
[0005] In contrast, in PTL 1, a method in which a hole injection
layer is increased in resistance between devices by a barrier
provided in an inverted-tapered shape, and thus occurrence of
leakage is prevented is proposed.
CITATION LIST
Patent Literature
[0006] PTL 1: Japanese Unexamined Patent Application Publication
No. 2009-4347
SUMMARY
Technical Problem
[0007] However, resistance of the hole injection layer is not
sufficiently increased by the method in PTL1, and thus development
of a method capable of preventing a leakage current more surely has
been demanded.
[0008] It is desirable to provide a display unit capable of
preventing occurrence of a leakage current more surely, a method of
manufacturing the display unit, and a method of manufacturing an
electronic apparatus.
Solution to Problem
[0009] According to an embodiment of the technology, there is
provided a first method of manufacturing a display unit. The method
includes: forming a plurality of first electrodes; forming a
functional layer that covers from the first electrode to an
inter-electrode region; and locally applying an energy ray to the
functional layer to form a disconnecting section or a
high-resistance section in the functional layer in the
inter-electrode region.
[0010] According to an embodiment of the technology, there is
provided a method of manufacturing an electronic apparatus. The
method includes manufacturing a display unit. The manufacturing the
display unit includes: forming a plurality of first electrodes;
forming a functional layer that covers from the first electrode to
an inter-electrode region; and locally applying an energy ray to
the functional layer to form a disconnecting section or a
high-resistance section in the functional layer in the
inter-electrode region.
[0011] In the method of manufacturing the display unit or the
method of manufacturing the electronic apparatus of the embodiment
of the technology, the disconnecting section or the high-resistance
section is formed in the functional layer by application of the
energy ray, and therefore flow of a current through the functional
layer is blocked by the inter-electrode region.
[0012] According to an embodiment of the technology, there is
provided a display unit including: a plurality of first electrodes;
and a functional layer covering from the first electrode to an
inter-electrode region, and having a disconnecting section or a
high-resistance section in the inter-electrode region, the
disconnecting section or the high-resistance section being formed
by local application of an energy ray.
[0013] In the display unit of the embodiment of the technology,
flow of a current through the functional layer is blocked by the
disconnecting section in the inter-electrode region.
[0014] According to an embodiment of the technology, there is a
second method of manufacturing a display unit. The method includes:
forming a plurality of first electrodes; forming a terminal and a
burrier in an inter-electrode region of the first electrodes, the
terminal being embedded in the barrier; applying an energy ray to
the barrier to expose a surface of the terminal embedded in the
barrier, and electrically connecting the terminal to a second
electrode, the second electrode facing the first electrode with a
functional layer in between.
[0015] In the second method of manufacturing the display unit
according to the embodiment of the technology, the second electrode
is electrically connected to the terminal embedded in the barrier.
Therefore, a region in which an electrode pad for connecting the
second electrode is provided is allowed to be eliminated. For
example, the electrode pad provided in the periphery of the display
region becomes unnecessary, and a region (a peripheral section)
between the display region and a dicing region is allowed to be
decreased. In addition, the barrier is shaved and smoothed by
application of the energy ray, and thus disconnection of the second
electrode is suppressed.
Advantageous Effects of Invention
[0016] According to the display unit, the method of manufacturing
the display unit, and the method of manufacturing the electronic
apparatus according to the respective embodiments of the
technology, a disconnecting section or a high-resistance section is
provided in a functional layer by application of an energy ray.
Consequently, occurrence of a leakage current is more surely
prevented.
[0017] It is to be understood that both the foregoing general
description and the following detailed description are exemplary,
and are intended to provide further explanation of the technology
as claimed.
BRIEF DESCRIPTION OF DRAWINGS
[0018] The accompanying drawings are included to provide a further
understanding of the technology, and are incorporated in and
constitute a part of this specification. The drawings illustrate
embodiments and, together with the specification, serve to explain
the principles of the technology.
[0019] FIG. 1 is a sectional diagram illustrating a structure of a
display unit according to a first embodiment of the technology.
[0020] FIG. 2 is a diagram illustrating an entire configuration of
the display unit illustrated in FIG. 1.
[0021] FIG. 3 is a diagram illustrating an example of a pixel drive
circuit illustrated in FIG. 2.
[0022] FIG. 4 is a sectional diagram illustrating another example
of a barrier illustrated in FIG. 1.
[0023] FIG. 5A is a sectional diagram illustrating a step of
manufacturing the display unit illustrated in FIG. 1.
[0024] FIG. 5B is a sectional diagram illustrating a step following
the step of FIG. 5A.
[0025] FIG. 5C is a sectional diagram illustrating a step following
the step of FIG. 5B.
[0026] FIG. 6A is a sectional diagram illustrating a step following
the step of FIG. 5C.
[0027] FIG. 6B is a sectional diagram illustrating a step following
the step of FIG. 6A.
[0028] FIG. 6C is a sectional diagram illustrating a step following
the step of FIG. 6B.
[0029] FIG. 7A is a sectional diagram illustrating a step following
the step of FIG. 6C.
[0030] FIG. 7B is a sectional diagram illustrating a step following
the step of FIG. 7A.
[0031] FIG. 8A is a sectional diagram illustrating a step following
the step of FIG. 7B.
[0032] FIG. 8B is a sectional diagram illustrating a step following
the step of FIG. 8A.
[0033] FIG. 9A is a sectional diagram illustrating a step following
the step of FIG. 8B.
[0034] FIG. 9B is a sectional diagram illustrating a step following
the step of FIG. 9A.
[0035] FIG. 10 is a sectional diagram illustrating another example
of the step illustrated in FIG. 9A.
[0036] FIG. 11A is a sectional diagram illustrating a step
following the step of FIG. 9B.
[0037] FIG. 11B is a sectional diagram illustrating a step
following the step of FIG. 11A.
[0038] FIG. 12 is a sectional diagram illustrating a structure of a
display unit according to a comparative example.
[0039] FIG. 13 is a sectional diagram illustrating a structure of a
display unit according to a modification 1.
[0040] FIG. 14A is a sectional diagram illustrating a step of
manufacturing the display unit illustrated in FIG. 13.
[0041] FIG. 14B is a sectional diagram illustrating a step
following the step of FIG. 14A.
[0042] FIG. 15 is a sectional diagram illustrating a structure of a
display unit according to a modification 2.
[0043] FIG. 16 is a sectional diagram illustrating a structure of a
display unit according to a second embodiment of the
technology.
[0044] FIG. 17 is a sectional diagram illustrating a step of
manufacturing the display unit illustrated in FIG. 16.
[0045] FIG. 18A is a sectional diagram illustrating another example
of the display unit illustrated in FIG. 16.
[0046] FIG. 18B is a sectional diagram illustrating another example
of the display unit illustrated in FIG. 18A.
[0047] FIG. 19 is a sectional diagram illustrating a structure of a
display unit according to a third embodiment of the technology.
[0048] FIG. 20A is a sectional diagram illustrating an example of a
step of manufacturing the display unit illustrated in FIG. 19.
[0049] FIG. 20B is a sectional diagram illustrating a step
following the step of FIG. 20A.
[0050] FIG. 21A is a sectional diagram illustrating another example
of the step of manufacturing the display unit illustrated in FIG.
19.
[0051] FIG. 21B is a sectional diagram illustrating a step
following the step of FIG. 21A.
[0052] FIG. 22 is a sectional diagram illustrating a structure of a
display unit according to a fourth embodiment of the
technology.
[0053] FIG. 23A is a plan view illustrating the structure of the
display unit illustrated in FIG. 12.
[0054] FIG. 23B is a diagram illustrating a sectional structure
taken along a B-B line in FIG. 23A.
[0055] FIG. 24A is a sectional diagram illustrating a step of
manufacturing the display unit illustrated in FIG. 22.
[0056] FIG. 24B is a sectional diagram illustrating a step
following the step of FIG. 24A.
[0057] FIG. 24C is a sectional diagram illustrating a step
following the step of FIG. 24B.
[0058] FIG. 25A is a sectional diagram illustrating a step
following the step of FIG. 24C.
[0059] FIG. 25B is a sectional diagram illustrating a step
following the step of FIG. 25A.
[0060] FIG. 25C is a sectional diagram illustrating a step
following the step of FIG. 25B.
[0061] FIG. 26 is a plan view illustrating a schematic
configuration of a module including the display unit illustrated in
FIG. 1 and the like.
[0062] FIG. 27 is a perspective view illustrating an appearance of
an application example 1.
[0063] FIG. 28A is a perspective view illustrating an appearance of
an application example 2 viewed from a front side thereof.
[0064] FIG. 28B is a perspective view illustrating the appearance
of the application example 2 viewed from a back side thereof.
[0065] FIG. 29 is a perspective view illustrating an appearance of
an application example 3.
[0066] FIG. 30 is a perspective view illustrating an appearance of
an application example 4.
[0067] FIG. 31A is a diagram illustrating an application example 5
in a closed state.
[0068] FIG. 31B is a diagram illustrating the application example 5
in an open state.
DESCRIPTION OF EMBODIMENTS
[0069] Some embodiments of the present technology will be described
in detail below referring to the accompanying drawings. It is to be
noted that description will be given in the following order.
[0070] 1. First embodiment (a display unit in which a disconnecting
section is provided in a hole injection layer: top-emission
type)
[0071] 2. Modification 1 (a display unit in which a high-resistance
section is provided in a hole injection layer)
[0072] 3. Modification 2 (a display unit in which a disconnecting
section is provided in a hole injection layer: bottom-emission
type)
[0073] 4. Second embodiment (a display unit in which a barrier is
smoothed by application of an energy ray)
[0074] 5. Third embodiment (a display unit in which a disconnecting
section is provided in a light-emitting layer in addition to a hole
injection layer)
[0075] 6. Fourth embodiment (a display unit in which a terminal is
embedded in a barrier)
First Embodiment
[0076] (Entire Configuration of Display Unit)
[0077] FIG. 1 illustrates a sectional structure of a main part of a
display unit (a display unit 1) according to a first embodiment of
the technology. The display unit 1 is a self-luminous display unit
including a plurality of organic EL devices 10, and includes a
pixel drive circuit forming layer L1, a light emitting device
forming layer L2 including the organic EL devices 10, and a counter
substrate 21 in this order on a support substrate 11. The display
unit 1 is a so-called top-emission type display unit having a light
extraction direction on the counter substrate 21 side. The pixel
drive circuit forming layer L1 may include, for example, a signal
line drive circuit and a scan line drive circuit (both not
illustrated) for picture display. Detail of each component will be
described later.
[0078] FIG. 2 illustrates an entire configuration of the display
unit 1. The display unit 1 includes a display region 110 on the
support substrate 11, and is used as an extra-thin organic light
emission color display unit. For example, a signal line drive
circuit 120, a scan line drive circuit 130, and a power supply line
drive circuit 140 that are drivers for picture display may be
provided in the periphery of the display region 110 on the support
substrate 11.
[0079] In the display region 110, the plurality of organic EL
devices 10 (10R, 10G, and 10B) that are arranged two-dimensionally
in a matrix, and a pixel drive circuit 150 driving the organic EL
devices 10 are provided. The organic EL devices 10R, 10G, and 10B
emit light of red, green, and blue, respectively. In the pixel
drive circuit 150, a plurality of signal lines 120A (120A1, 120A2
and so on to 120Am, etc.) and a plurality of power supply lines
140A (140A1 and so on to 140An, etc.) are arranged in a column
direction (Y direction), and a plurality of scan lines 130A (130A1
and so on to 130An, etc.) are arranged in a row direction (X
direction). One of the organic EL devices 10R, 10G, and 10B is
provided in an intersection of each of the signal lines 120A and
each of the scan lines 130A. Both ends of each signal line 120A are
connected to the signal line drive circuit 120, both ends of each
scan line 130A are connected to the scan line drive circuit 130,
and both ends of each power supply line 140A are connected to the
power supply line drive circuit 140.
[0080] The signal line drive circuit 120 supplies, through the
signal line 120A, a signal voltage of a picture signal
corresponding to luminance information supplied from a signal
supply source (not illustrated) to the selected organic EL devices
10R, 10G, and 10B. A signal voltage from the signal line drive
circuit 120 is applied to both ends of the signal line 120A.
[0081] The scan line drive circuit 130 is configured of a shift
register or the like that sequentially shifts (transfers) a start
pulse in synchronization with an input clock pulse. The scan line
drive circuit 130 scans the organic EL devices 10R, 10G, and 10B
for each row at the time of writing the picture signal, and
sequentially supplies the scan signal to each of the scan lines
130A. The scan signal is supplied from the scan line drive circuit
130 to both ends of the scan line 130A.
[0082] The power supply line drive circuit 140 is configured of a
shift resistor or the like that sequentially shifts (transfers) a
start pulse in synchronization with an input clock pulse. The power
supply line drive circuit 140 appropriately supplies one of a first
potential and a second potential that are different from each
other, to both ends of each power supply line 140A in
synchronization with the scan for each column by the signal line
drive circuit 120. As a result, a conduction state or a
non-conduction state of a drive transistor Tr1 described later is
selected.
[0083] The pixel drive circuit 150 is provided in a layer between
the support substrate 11 and the organic EL devices 10, that is, in
the pixel drive circuit forming layer L1 (a TFT layer 12 described
later). FIG. 3 illustrates a configuration example of the pixel
drive circuit 150. The pixel drive circuit 150 is an active drive
circuit including the drive transistor Tr1 and a write transistor
Tr2, a capacitor (a retention capacitance) Cs therebetween, and the
organic EL device 10. The organic EL device 10 is connected in
series with the drive transistor Tr1 between the power supply line
140A and a common power supply line (GND). The drive transistor Tr1
and the write transistor Tr2 are each configured of a typical thin
film transistor (TFT), and the configuration thereof may be an
inverted-staggered structure (a so-called bottom gate type) or a
staggered structure (a top gate type), and is not particularly
limited.
[0084] For example, the write transistor Tr2 has a drain electrode
connected to the signal line 120A, and receives a picture signal
from the signal line drive circuit 120. In addition, the write
transistor Tr2 has a gate electrode connected to the scan line
130A, and receives a scan signal from the scan line drive circuit
130. Further, the write transistor Tr2 has a source electrode
connected to a gate electrode of the drive transistor Tr1.
[0085] For example, the drive transistor Tr1 has a drain electrode
connected to the power supply line 140A, and the drain electrode is
set to one of the first potential and the second potential by the
power supply line drive circuit 140. The drive transistor Tr1 has a
source electrode connected to the organic EL device 10.
[0086] The retention capacitance Cs is formed between the gate
electrode of the drive transistor Tr1 (the source electrode of the
write transistor Tr2) and the drain electrode of the drive
transistor Tr1.
[0087] (Configuration of Main Part of Display Unit)
[0088] Next, with reference to FIG. 1 again, detailed
configurations of the support substrate 11, the pixel drive circuit
forming layer L1, the light-emitting element forming layer L2, the
counter substrate 21, and the like are described. The organic EL
devices 10R, 10G, and 10B have a common configuration which will be
given collectively.
[0089] The support substrate 11 is formed of glass, a silicon (Si)
wafer, resin, a conductive material, or the like. The support
substrate 11 may be formed of a transmissive material or a
non-transmissive material because light is extracted from the
counter substrate 21 in the top-emission type. When a conductive
substrate is used, a surface is insulated by silicon oxide
(SiO.sub.2) or resin.
[0090] The pixel drive circuit forming layer L1 has a stacked
structure including the TFT layer 12 and a planarization layer 13.
In the pixel drive circuit forming layer L1, the drive transistor
Tr1 and the write transistor Tr2 that configure the pixel drive
circuit 150 are provided, and the signal line 120A, the scan line
130A, and the power supply line 140A (not illustrated) are also
embedded.
[0091] The configuration of the TFT (the drive transistor Tr1 and
the write transistor Tr2) of the TFT layer 12 is not particularly
limited, and for example, a semiconductor layer may be formed using
amorphous silicon (a-Si), an oxide semiconductor, an organic
semiconductor, or the like. In addition, the drive transistor Tr1
and the write transistor Tr2 may be configured of metal oxide
semiconductor field effect transistor (MOSFET).
[0092] The planarization layer 13 planarizes the surface of the
support substrate 11 formed with the pixel drive circuit 150, and
may be preferably formed of a material having higher pattern
accuracy because fine connection hole 13H is to be provided. The
drive transistor Tr1 of the TFT layer 12 is electrically connected
to the organic EL device 10 (a first electrode 14 described later)
through the connection hole 13H provided in the planarization layer
13. The connection hole 13H is provided with a plug formed of a
conductive metal. Examples of the material of the planarization
layer 13 may include an organic material such as polyimide, and an
inorganic material such as silicon oxide (SiO.sub.2), silicon
nitride (SiNx), and silicon oxynitride (SiON).
[0093] In the light-emitting device forming layer L2, the organic
EL devices 10, the barrier 19, and a protective layer 18 covering
the organic EL devices 10 and the barrier 19 are provided.
[0094] Each of the organic EL device 10 is configured by stacking
the first electrode 14 as an anode electrode, the organic layer
including the hole injection layer 15 and the light-emitting layer
16, and a second electrode 17 as a cathode electrode in order from
the support substrate 11 side.
[0095] The first electrode 14 is provided for each organic EL
device 10, and the plurality of first electrodes 14 are arranged to
be distanced from one another on the planarization layer 13. The
first electrode 14 has a function as an anode and a function as a
reflective layer, and may be desirably formed of a material having
high reflectance and high hole injection property. Such a first
electrode 14 may have, for example, a thickness in a stacking
direction (hereinafter, simply referred to as a thickness) of 30 nm
or more and 1000 nm or less, and examples of the material thereof
may include metal elements such as chromium (Cr), gold (Au),
platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), tungsten
(W), titanium (Ti), tantalum (Ta), aluminum (Al), and silver (Ag),
and an alloy thereof. For example, the first electrode 14 of the
display unit 1 may have a stacked structure of first electrodes 14A
and 14B. For example, titanium may be used for the first electrode
14A in a lower layer (on the planarization layer 13 side), and
aluminum may be used for the first electrode 14B in an upper layer
(on the hole injection layer 15 side).
[0096] The barrier 19 is provided between the first electrodes 14
adjacent to each other (in an inter-electrode region), and covers
an end of the surface of the first electrode 14 (the first
electrode 14B). The barrier 19 rises from the surface of the first
electrode 14 toward the second electrode 17 side, and surrounds the
first electrode 14 with the side surface of the barrier 19 (an
opening). The barrier 19 is provided to ensure insulation property
between the first electrode 14 and the second electrode 17 and
between the organic EL devices 10 adjacent to each other, and to
control the light-emitting region into a desired shape accurately.
The opening of the barrier 19 on the first electrode 14 corresponds
to the light-emitting region. For example, the size of the opening
of the barrier 19 may be uniform from the first electrode 14 to the
second electrode 17 (in a depth direction), namely, the
cross-sectional surface (XZ cross-sectional surface) of the barrier
19 has a substantially rectangular shape. As illustrated in FIG. 4,
the cross-sectional surface of the barrier 19 may have a forward
tapered shape, and the opening may be increased from the first
electrode 14 toward the second electrode 17. For example, the
barrier 19 may be formed of silicon oxide, silicon nitride, or
silicon oxynitride, and may have a thickness of 10 nm or more.
[0097] The organic layer including the hole injection layer 15 and
the light-emitting layer 16 has the same structure irrespective of
the color of light emitted from the organic EL device 10 (10R, 10G,
and 10B), and may be configured by stacking, for example, the hole
injection layer 15, a hole transport layer (not illustrated), the
light-emitting layer 16, an electron transport layer (not
illustrated), and an electron injection layer (not illustrated) in
this order from the first electrode 14 side. The hole injection
layer 15 is a buffer layer for increasing hole injection efficiency
and for preventing leakage. In the first embodiment, a
disconnecting section 15D of the hole injection layer 15 is
provided in the inter-electrode region. Accordingly, occurrence of
a leakage current through the hole injection layer 15 is allowed to
be prevented.
[0098] Although the detail will be described later, the
disconnecting section 15D is a section formed by removing the hole
injection layer 15 by irradiation of the energy ray. The current
flowing between the organic EL devices 10 through the hole
injection layer 15 is blocked by the disconnecting section 15D.
Although the disconnection section 15D is preferably formed over
the inter-electrode region, may be provided in at least a part of
the inter-electrode region. For example, the disconnecting section
15D may be provided at the same position (planar view) as the
surface of the barrier 19 (FIG. 1).
[0099] For example, the hole injection layer 15 may have a
thickness of 1 nm or more and 300 nm or less, and may be formed of
a hexaazatriphenylene derivative illustrated in Chemical Formula 1
or 2.
##STR00001##
[0100] where R.sup.1 to R.sup.6 each are independently a
substituted group selected from a group of hydrogen, halogen, a
hydroxyl group, an amino group, an arylamino group, a substituted
or unsubstituted carbonyl group with 20 or less carbon atoms, a
substituted or unsubstituted carbonyl ester group with 20 or less
carbon atoms, a substituted or unsubstituted alkyl group with 20 or
less carbon atoms, a substituted or unsubstituted alkenyl group
with 20 or less carbon atoms, a substituted or unsubstituted
alkoxyl group with 20 or less carbon atoms, a substituted or
unsubstituted aryl group with 30 or less carbon atoms, a
substituted or unsubstituted heterocyclic group with 30 or less
carbon atoms, a nitrile group, a cyano group, a nitro group, and a
silyl group, and adjacent groups R.sup.m, where m=1 to 6, may be
joined together through a cyclic structure, and X.sup.1 to X.sup.6
each are independently a carbon atom or a nitrogen atom.
##STR00002##
[0101] The hole transport layer is to increase the hole transport
efficiency to the light-emitting layer 16. For example, the hole
transport layer may have a thickness of about 40 nm, and may be
formed of 4,4',4''-tris(3-metylphenylphenylamino)triphenylamine
(m-MTDATA) or alpha-naphtylphenyldiamine (alpha NPD). The hole
transport layer, the light-emitting layer 16, the electron
transport layer, and the electron injection layer are common to all
of the organic EL devices 10, and are also provided in the
inter-electrode region. In other words, in the disconnecting
section 15D of the hole injection layer 15, for example, the hole
transport layer may be in contact with the barrier 19.
[0102] The light-emitting layer 16 is a light-emitting layer for
emitting white light, and for example, may include a red
light-emitting layer, a green light-emitting layer, and a blue
light-emitting layer (all not illustrated) that are stacked between
the first electrode 14 and the second electrode 17. The red
light-emitting layer, the green light-emitting layer, and the blue
light-emitting layer generate red light, green light, and blue
light, respectively, by recombination of a part of holes that are
injected from the first electrode 14 through the hole injection
layer 15 and the hole transport layer and a part of electrons that
are injected from the second electrode 17 through the electron
injection layer and the electron transport layer, in response to
application of an electric field.
[0103] For example, the red light-emitting layer may include one or
more of a red light-emitting material, a hole transport material,
an electron transport material, and a both charge transport
material. The red light-emitting material may be a fluorescent
material or a phosphorescent material. For example, the red
light-emitting layer may have a thickness of about 5 nm, and may be
formed of 4,4-bis(2,2-diphenylvinyl)biphenyl (DPVBi) mixed with 30
wt % of
2,6-bis<(4'-methoxydiphenylamino)styryl>-1,5-dicyanonaphtaren
(BSN).
[0104] For example, the green light-emitting layer may include one
or more of a green light-emitting material, a hole transport
material, an electron transport material, and a both charge
transport material. The green light-emitting material may be a
fluorescent material or a phosphorescent material. For example, the
green light-emitting layer may have a thickness of about 10 nm, and
may be formed of DPVBi mixed with 5 wt % of Coumarin 6.
[0105] For example, the blue light-emitting layer may include one
or more of a blue light-emitting material, a hole transport
material, an electron transport material, and a both charge
transport material. The blue light-emitting material may be a
fluorescent material or a phosphorescent material. For example, the
blue light-emitting layer may have a thickness of about 30 nm, and
may be formed of DPVBi mixed with 2.5 wt % of
4,4'-bis<2-{4-(N,N-diphenylamino)phenyl}vinyl>biphenyl
(DPAVBi).
[0106] The electron transport layer is to increase the electron
transport efficiency to the light-emitting layer 16, and for
example, may be formed of 8-hydroxyquinorinaluminum (Al3) with a
thickness of about 20 nm. The electron injection layer is to
increase the electron injection efficiency to the light-emitting
layer 16, and for example, may be formed of LiF, Li.sub.2O, or the
like with a thickness of about 0.3 nm.
[0107] The second electrode 17 is paired with the first electrode
14 with the organic layer in between, and is provided on the
electron injection layer so as to be insulated from the first
electrode 14 and so as to be common to the organic EL devices 10.
The second electrode 17 is formed of a light-transmissive
transparent material, and may be formed of, for example, an alloy
of aluminum (Al, magnesium (Mg), silver (Ag), calcium (Ca), or
sodium (Na). Among them, an alloy of magnesium and silver (Mg--Ag
alloy) is preferable because the alloy has a conductivity and small
absorbability in a thin film state. Although the ratio of magnesium
and silver in the Mg--Ag alloy is not particularly limited, the
ratio is desirably within a range of Mg:Ag=20:1 to 1:1 in film
thickness. Alternatively, as the material of the second electrode
17, an alloy of aluminum (Al and lithium (Li) (Al--Li alloy) may be
used, or indium tin oxide (ITO), zinc oxide (ZnO), alumina-doped
zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium zinc oxide
(IZO), indium titanium oxide (ITiO), indium tungsten oxide (IWO),
or the like may be used.
[0108] For example, the protective layer 18 may be formed of an
insulating resin material such as polyimide, similarly to the
planarization layer 13.
[0109] The counter substrate 21 seals the organic EL devices 10
together with an adhesive layer (not illustrated) such as a
thermosetting resin. The counter substrate 21 is formed of a
transparent glass material or a transparent plastic material that
allows light generated in the light-emitting layer 16 to pass
therethrough. A color filter (not illustrated) is provided on one
surface of the counter substrate 21. The color filter includes a
red filter, a green filter, and a blue filter that are arranged in
order corresponding to the organic EL devices 10R, 10G, and 10B,
respectively. Although the color filter may be provided on any of
the surfaces of the counter substrate 21, is preferably provided on
a surface on the organic EL devices 10 side. This is because the
color filter is not exposed on the surface and is protected by the
protective layer 18 (or the adhesive layer). In addition, this is
because a distance between the light-emitting layer 16 and the
color filter is decreased so as to prevent the light emitted from
the light-emitting layer 16 from entering adjacent other color
filter to cause color mixture.
[0110] Such a display unit 1 may be manufactured in the following
way, for example (FIG. 5A to FIG. 11B).
[0111] First, the pixel drive circuit 150 (the TFT layer 12)
including the drive transistor Tr1 is formed on the support
substrate 11 made of the above-described material, and for example,
a photosensitive resin is then applied on the entire surface of the
support substrate 11. The photosensitive resin is subjected to
exposure and development to be patterned into a predetermined
shape, and thus the planarization layer 13 is formed. At the same
time as the patterning, the contact hole 13H and the plug are
formed (FIG. 5A).
[0112] Subsequently, as illustrated in FIG. 5B, a metal film 14AM
made of titanium with a thickness of about 2 nm or more, and a
metal film 14BM made of aluminum with a thickness of about 20 nm or
more are formed by, for example, sputtering in order on the
planarization layer 13. Then, a resist 22 is applied on the metal
film 14BM (FIG. 5C), and the metal film 14M (the metal films 14AM
and 14BM) is patterned using photolithography. Specifically, after
the resist 22 is exposed, dry etching is performed (FIG. 6A), and
the resist 22 is removed by ashing and washing to form the first
electrode 14 divided for each organic EL device 10 (FIG. 6B).
[0113] Subsequently, as illustrated in FIG. 6C, an insulating film
19M made of, for example, silicon oxide is formed to have a
thickness of, for example, 20 nm or more on the entire surface of
the support substrate 11. At this time, the insulating film 19M is
formed to be larger in thickness than the first electrode 14. The
insulating film 19M is formed using, for example, plasma chemical
vapor deposition (CVD) that is capable of forming a conformal film.
High density plasma (HPD) may be used to fill a gap (to prevent
formation of pore) between the first electrodes 14. After the
insulating film 19M is formed, the barrier 19 is formed by
photolithography and etching. Specifically, first, a resist 23 is
applied on the insulating film 19M, and is then exposed (FIG. 7A).
Then, etching is performed to form an opening on the insulating
film 19M (FIG. 7B), and the resist 23 is removed by ashing and
washing (FIG. 8A). As a result, the barrier 19 is formed.
[0114] Then, as illustrated in FIG. 8B, the hole injection layer 15
is formed by, for example, an evaporation method on the entire
surface of the support substrate 11, and the hole injection layer
15 covering from the first electrode 14 to the barrier 19 in the
inter-electrode region is provided. After that, en energy ray E
having directivity is applied to the hole injection layer 15 (FIG.
9A) to form the disconnecting section 15D (FIG. 9B). For example,
an ion beam, an atomic beam, a molecular beam, an electron beam, a
laser beam, and the like may be used as the energy ray E. For
example, by performing ion-milling using an argon (Ar) ion beam as
the energy ray E, the hole injection layer 15 in the
inter-electrode region is removed, and thus the disconnecting
section 15D is formed. The energy ray E is applied to the surface
of the first electrode 14 at a low angle of, for example, 1 degree
or more and less than 90 degrees. The barrier 19 is raised compared
with the surface of the first electrode 14. Therefore, the energy
ray E applied at a low angle is blocked by the barrier 19, and the
hole injection layer 15 on the first electrode 14 is prevented from
being removed. As described above, the energy ray E is locally
applied to the hole injection layer 15 in the inter-electrode
region with use of the shape of the barrier 19 so that the
disconnecting section 15D is allowed to be formed by self-alignment
without using a mask or the like. In this case, only the hole
injection layer 15 is selectively removed by the application of the
energy ray E. The hole injection layer 15 is extremely smaller in
thickness than the barrier 19 or the like in the lower layer, and
thus provision of the disconnecting section 15D does not affects
the light-emitting layer 16, the second electrode 17, and the like
in the upper layer.
[0115] As illustrated in FIG. 10, after the barrier 19 and the hole
injection layer 15 are formed without patterning the metal film
14M, the energy ray E may be applied. By application of the energy
ray E, the disconnecting section 15D of the hole injection layer 15
and the metal film 14M in a lower layer of the barrier 19 are
removed to form a gap. In other words, the gap between the first
electrodes 14 adjacent to each other is formed.
[0116] After the disconnecting section 15D is provided in the hole
injection layer 15, as illustrated in FIG. 11A, the hole transport
layer (not illustrated), the light-emitting layer 16, the electron
transport layer (not illustrated), the electron injection layer
(not illustrated), and the second electrode 17 are formed by, for
example, an evaporation method in this order on the entire surface
of the support substrate 11. As a result, the organic EL device 10
is formed.
[0117] Subsequently, the protective layer 18 is formed by, for
example, CVD or sputtering on the organic EL device 10 (FIG. 11B).
Finally, the counter substrate 21 provided with the color filter is
bonded to the protective layer 18 with the adhesive layer (not
illustrated) in between to complete the display unit 1.
[0118] In the display unit 1, the scan signal is supplied from the
scan line drive circuit 130 to each of the organic EL devices 10
(10R, 10G, and 10B) through the gate electrode of the write
transistor Tr2, and the picture signal is supplied from the signal
line drive circuit 120 through the write transistor Tr2 and is
retained in the retention capacitance Cs. Specifically, the drive
transistor Tr1 is controlled to be turned on or off in response to
the signal retained in the retention capacitance Cs, and thus a
drive current Id is injected to each of the organic EL devices 10.
This causes recombination of holes and electrons, thereby resulting
in light emission. The light is extracted after passing through the
second electrode 17, the color filter (not illustrated), and the
counter substrate 21.
[0119] In this case, since the disconnecting section 15D of the
hole injection layer 15 is provided in the inter-electrode region
by application of the energy ray E, occurrence of a leakage current
through the hole injection layer 15 is allowed to be prevented.
[0120] FIG. 12 illustrates a sectional structure of a display unit
(a display unit 100) according to a comparative example. In the
display unit 100, a disconnecting section is not provided in a hole
injection layer 151, and the hole injection layers 151 in
respective organic EL devices 100E are connected to one another.
Accordingly, a drive current flows between the organic EL devices
100E through the hole injection layer 151, which may result in
occurrence of leakage. In particular, in a white emission type
display, the organic layer is not colored individually for each
organic EL device, and thus occurrence of leakage easily becomes an
issue.
[0121] In Patent Literature 1, a method of increasing resistance of
a hole injection layer between devices by a barrier provided in an
inverted-tapered shape to prevent occurrence of leakage is
proposed. However, it is difficult to increase the resistance
sufficiently by the method. In addition, the barrier is deformed
into a tapered shape by thermal treatment after the formation of
the hole injection layer, and thus an organic layer such as the
hole injection layer may be deteriorated by heat.
[0122] In contrast, in the display unit 1, since the disconnecting
section 150 of the hole injection layer 15 is formed by application
of the energy ray E, flow of the current through the hole injection
layer 15 is blocked by the inter-electrode region. Accordingly,
occurrence of leakage through the hole injection layer 15 is
allowed to be suppressed more surely. Moreover, appropriately
selecting the energy ray E prevents characteristic deterioration of
the organic EL device 10. For example, heat is not generated by
application of an ion beam, and thus the characteristics of the
organic EL device 10 are maintained without deterioration. Further,
the energy ray E is locally applied to the hole injection layer 15
in the inter-electrode region with use of the shape of the barrier
19, and thus the disconnecting section 15D is allowed to be formed
by self alignment without using a mask or the like.
[0123] As described above, in the display unit 1 of the first
embodiment, since the disconnecting section 15D of the hole
injection layer 15 is provided in the inter-electrode region by
application of the energy ray E, occurrence of leakage through the
hole injection layer 15 is allowed to be prevented more surely.
[0124] Hereinafter, modifications of the first embodiment and other
embodiments will be described, and like numerals are used to
designate substantially like components of the first embodiment,
and the description thereof will be appropriately omitted.
[0125] <Modification 1>
[0126] FIG. 13 illustrates a sectional structure of a display unit
(a display unit 1A) according to a modification 1. The display unit
1A has a high-resistance section 15H of the hole injection layer 15
in the inter-electrode region. Except for this point, the display
unit 1A has a structure, function, and effects similar to those of
the display unit 1.
[0127] As illustrated in FIG. 14A, the high-resistance section 15H
of the hole injection layer 15 is a section to which the energy ray
E has been applied similarly to the first embodiment. In the
high-resistance section 15H, the hole injection layer 15 is not
removed, and the material thereof is modified by application of the
energy ray E to have the high resistance (FIG. 14B). Accordingly,
occurrence of a leakage current through the hole injection layer 15
is allowed to be prevented, similarly to the dis-connecting section
15D.
[0128] <Modification 2>
[0129] FIG. 15 illustrates a sectional structure of a display unit
(a display unit 1B) according to a modification 2. In the display
unit 1B, a picture is displayed on the support substrate 11 side.
In other words, the display unit 1B is a so-called bottom-emission
type display unit. Except for this point, the display unit 1B has a
structure, function, and effects similar to those of the display
unit 1.
[0130] In the display unit 1B, the support substrate 11 and the
first electrode 14 are each formed of a transparent material, and
the second electrode 17 is formed of a reflective material. Light
emitted from the light-emitting layer 16 is extracted after passing
through the first electrode 14 and the support substrate 11. The
high-resistance section 15H may be provided in place of the
disconnecting section 15D (FIG. 13).
Second Embodiment
[0131] FIG. 16 illustrates a sectional structure of a display unit
(a display unit 2) according to a second embodiment. In the display
unit 2, by application of the energy ray E, the hole injection
layer 15 is removed and a part of the barrier 19 is shaved. Except
for this point, the display unit 2 has a structure, function, and
effects similar to those of the display unit 1.
[0132] As illustrated in FIG. 17, when the energy ray E is applied
to the hole injection layer 15, selection of the kind of the energy
ray E allows etching of the surface of the barrier 19. For example,
when an argon ion beam is applied to the barrier 19 formed of
silicon oxide, the barrier 19 is etched. The etched barrier 19 is
smoothed compared with the time of formation, and a step between
the barrier 19 and the first electrode 14 is decreased. In such a
way, smoothing the barrier 19 prevents disconnection of the second
electrode 17 on the barrier 19.
[0133] As illustrated in FIGS. 18A and 18B, the energy ray E may be
applied to the barrier 19 having a projection 19P. Providing the
projection 19P allows control of etching of the barrier 19 by
application of the energy ray E. The size and the shape of the
projection 19P may be appropriately adjusted, and the
cross-sectional surface of the projection 19P may be, for example,
a square shape (FIG. 18A) or a triangular shape (FIG. 18B).
Third Embodiment
[0134] FIG. 19 illustrates a sectional structure of a display unit
(a display unit 3) according to a third embodiment. In the display
unit 3, the disconnecting section 15D of the hole injection layer
15 and a disconnecting section (a disconnecting section 16D) of the
light-emitting layer 16 are provided in the inter-electrode region.
Except for this point, the display unit 3 has a structure,
function, and effects similar to those of the display unit 1.
[0135] The disconnecting section 16D of the light-emitting layer 16
is a section in which the light-emitting layer 16 is removed by
application of the energy ray E. When the light-emitting layer 16
on the barrier 19 (in the inter-electrode region) is removed, a
step formed in the second electrode 17 between the organic EL
devices 10 is decreased, and thus disconnection of the second
electrode 17 is allowed to be prevented. Moreover, providing the
disconnecting section 16D in addition to the disconnecting section
15D more effectively prevents occurrence of a leakage current.
[0136] For example, as illustrated in FIG. 20A, the disconnecting
section 16D of the light-emitting layer 16 may be formed together
with the disconnecting section 15D of the hole injection layer 15
by application of the energy ray E (FIG. 20B) after the hole
injection layer 15 and the light-emitting layer 16 are successively
formed.
[0137] Alternatively, as illustrated in FIG. 21A, after the
disconnecting section 15D is formed in the hole injection layer 15,
the light-emitting layer 16 is formed, and then the disconnecting
section 16D of the light-emitting layer 16 may be formed by
application of the energy ray E again (FIG. 21B).
Fourth Embodiment
[0138] FIG. 22 illustrates a sectional structure of a display unit
(a display unit 4) according to a fourth embodiment. In the display
unit 4, the disconnecting section 16D is provided in the
light-emitting layer 16 similarly to the above-described display
unit 3. In addition, a terminal (a terminal 17T) electrically
connected to the second electrode 17 is embedded in the barrier 19.
Except for this point, the display unit 4 has a structure,
function, and effects similar to those of the display unit 1.
[0139] The terminal 17T may be formed of, for example, tungsten,
titanium, aluminum, or titanium nitride (TiN), and is embedded in
the barrier 19 so that the surface thereof is exposed. The surface
of the terminal 17T is in contact with the second electrode 17, and
the terminal 17T is electrically connected to the second electrode
17. For example, the terminal 17T may be connected to the common
power supply line (GND) (FIG. 3).
[0140] In the display unit 100 according to the comparative
example, the second electrode 17 is provided in a region wider than
the display region 110, and is electrically connected to an
electrode pad 117T that is arranged so as to surround the display
region 110 (FIGS. 23A and 23B). In the display unit 100, it is
necessary to provide such an electrode pad 117T outside of the
display region 110, and a region (a peripheral region) between the
display region 110 and a dicing region 111 is accordingly
increased. In addition, a mask is used to form the electrode pad
117T, and therefore it is necessary to provide an area for margin
between the display region 110 and the electrode pad 117T. For
example, a bonding pad 118 may be provided outside of the electrode
pad 117T.
[0141] In the display unit 4, in place of the above-described
electrode pad 117T, the terminal 17T is provided so that the
peripheral region is allowed to be decreased. In addition, the
disconnecting section 16D of the light-emitting layer 16 prevents
disconnection of the second electrode 17. Although it is sufficient
to provide the disconnecting section 16D so that the second
electrode 17 and the terminal 17T are in contact with each other
(FIG. 22), the disconnecting section 16D may be provided over a
wider region (FIG. 19). FIG. 24A to FIG. 25C illustrate a method of
manufacturing the display unit 4.
[0142] First, as described for the display unit 1, after the first
electrode 14 is formed, the terminal 17T is formed in the
inter-electrode region. Next, the barrier 19 is formed so that the
terminal 17T is embedded therein and is totally covered therewith
(FIG. 24A). Subsequently, the hole injection layer 15 is formed
over the entire surface of the support substrate 11 (FIG. 24B), and
the energy ray E is then applied to form the disconnecting section
15D of the hole injection layer 15 (FIG. 24C). After the
disconnecting section 15D is formed, the light-emitting layer 16 is
formed over the entire surface of the substrate 11 (FIG. 25A), and
the energy ray E is applied thereto again. As a result, the
disconnecting section 16D is formed in the light-emitting layer 16,
and the barrier 19 is shaved so that the surface of the terminal
17T is exposed (FIG. 25B). After that, the second electrode 17 is
formed to be electrically connect with the terminal 17T (FIG. 25C).
When the barrier 19 is shaved and smoothed in addition to providing
the disconnecting section 16D in the light-emitting layer 16, the
disconnection of the second electrode 17 is more surely prevented.
Hereinafter, as with the display unit 1, the protective layer 18
and the counter substrate 21 are provided to complete the display
unit 4.
[0143] (Module)
[0144] Any of the display units 1, 1A, 1B, 2, 3, and 4 of the
above-described embodiments and the modifications may be
incorporated in various kinds of electronic apparatuses such as
application examples 1 to 5 described below as a module illustrated
in FIG. 26, for example. In particular, it is suitable for a
microdisplay demanded to have high definition, such as a view
finder of a video camcorder or a single-lens reflex camera, and a
head-mount display. For example, the module may have a region 210
exposed from the counter substrate 21 on a side of the support
substrate 11, and may have an external connection terminal (not
illustrated) that is formed of an extended wire of the signal line
drive circuit 120 and an extended wire of the scan line drive
circuit 130 in the exposed region 210. The external connection
terminal may be provided with a flexible printed circuit (FPC) 220
for inputting and outputting signals.
APPLICATION EXAMPLE 1
[0145] FIG. 27 illustrates an appearance of a television to which
the display unit of any of the embodiments and the modifications is
applied. The television may have, for example, a picture display
screen section 300 including a front panel 310 and a filter glass
320, and the picture display screen section 300 is configured of
the display unit according to any of the embodiments and the
modifications.
APPLICATION EXAMPLE 2
[0146] FIGS. 28A and 28B each illustrate an appearance of a digital
camera to which the display unit of any of the embodiments and the
modifications is applied. The digital camera may have, for example,
a light-emitting section 410 for a flash, a display section 420, a
menu switch 430, and a shutter button 440, and the display section
420 is configured of the display unit according to any of the
embodiments and the modifications.
APPLICATION EXAMPLE 3
[0147] FIG. 29 illustrates an appearance of a notebook personal
computer to which the display unit of any of the embodiments and
the modifications is applied. The notebook personal computer may
have, for example, a main body 510, a keyboard 520 for input
operation of characters and the like, and a display section 530
displaying a picture, and the display section 530 is configured of
the display unit according to any of the embodiments and the
modifications.
APPLICATION EXAMPLE 4
[0148] FIG. 30 illustrates an appearance of a video camcorder to
which the display unit of any of the embodiments and the
modifications is applied. The video camcorder may have, for
example, a main body section 610, a lens 620 that is used for
shooting a subject and is provided on a front side surface of the
main body section 610, a start-stop switch 630 for shooting, and a
display section 640, and the display section 640 is configured of
the display unit according to any of the embodiments and the
modifications.
APPLICATION EXAMPLE 5
[0149] FIGS. 31A and 31B each illustrates an appearance of a mobile
phone to which the display unit of any of the embodiments and the
modifications is applied. The mobile phone may be configured of,
for example, an upper housing 710 and a lower housing 720 that are
connected by a connection section (a hinge section) 730, and may
have a display 740, a sub-display 750, a picture light 760, and a
camera 770. The display 740 or the sub-display 750 is configured of
the display unit according to any of the embodiments and the
modifications.
[0150] Hereinbefore, although the technology has been described
with reference to the embodiments and the modifications, the
technology is not limited to the above-described embodiments and
the like, and various modifications may be made. For example, the
material, the thickness, the formation method, the formation
condition, and the like of each layer are not limited to those
described in the above-described embodiments and the like, and each
layer may be formed of any other material with any other thickness
by any other formation method under any other formation
condition.
[0151] Moreover, in the above-described embodiments and the like,
the case where, as the light-emitting layer 16, the light-emitting
layer for emitting white light including three layers of the red
light-emitting layer, the green light-emitting layer, and the blue
light-emitting layer has been described. However, the configuration
of the light-emitting layer 16 for emitting white light is not
particularly limited, and may be configured by stacking
light-emitting layers of two colors that are in complementary color
relationship to each other, for example, an orange light-emitting
layer and a blue light-emitting layer, or a blue-green
light-emitting layer and a red light-emitting layer. Further, the
light-emitting layer 16 is not limited to the light-emitting layer
for emitting white light, and is applicable to a display unit for a
single color in which, for example, only a green light-emitting
layer is formed. In addition, the light-emitting layer 16 may be
applied to a display unit in which the light-emitting layer 16 is
colored individually for each organic EL device 10.
[0152] Furthermore, for example, in the above-described embodiments
and the like, the case where the first electrode 14 serves as an
anode and the second electrode 17 serves as a cathode has been
described. Alternatively, the anode and the cathode may be
inverted, and the first electrode 14 may serve as a cathode and the
second electrode 17 may serve as an anode. In addition, the display
units 3 and 4 may be a bottom-emission display unit.
[0153] Note that the technology may be configured as follows.
[0154] (1) A method of manufacturing a display unit, the method
including:
[0155] forming a plurality of first electrodes;
[0156] forming a functional layer that covers from the first
electrode to an inter-electrode region; and
[0157] locally applying an energy ray to the functional layer to
form a disconnecting section or a high-resistance section in the
functional layer in the inter-electrode region.
[0158] (2) The method according to (1), wherein
[0159] a barrier is provided in the inter-electrode region, and
[0160] the energy ray is applied to the functional layer covering
the barrier.
[0161] (3) The method according to (1) or (2), wherein the energy
ray is applied to a surface of the first electrode at an angle of
less than about 90 degrees.
[0162] (4) The method according to (2) or (3), wherein the
functional layer is a hole injection layer between the first
electrode and an light-emitting layer.
[0163] (5) The method according to (2) or (3), wherein the
functional layer is a light-emitting layer and a hole injection
layer between the light-emitting layer and the first electrode.
[0164] (6) The method according to any one of (2) to (5), wherein a
second electrode that is paired with the first electrode is formed
with the functional layer in between after the disconnecting
section or the high-resistance section is provided in the
functional layer.
[0165] (7) The method according to (6), wherein the energy ray is
applied to form the disconnecting section and to allow a surface of
a terminal embedded in the barrier to be exposed, and
[0166] the terminal is electrically connected to the second
electrode.
[0167] (8) The method according to any one of (2) to (5),
wherein
[0168] the energy ray is applied to form the disconnecting section
and to shave the barrier, and
[0169] a second electrode that is paired with the first electrode
is formed with the functional layer therebetween.
[0170] (9) The method according to any one of (1) to (8), wherein
the energy ray is applied to form a gap between the first
electrodes adjacent to each other.
[0171] (10) The method according to any one of (1) to (9), wherein
one of an ion beam, an atomic beam, a molecular beam, an electron
beam, and a laser beam is used as the energy ray.
[0172] (11) A method of manufacturing an electronic apparatus, the
method including manufacturing a display unit, the manufacturing
the display unit including:
[0173] forming a plurality of first electrodes;
[0174] forming a functional layer that covers from the first
electrode to an inter-electrode region; and
[0175] locally applying an energy ray to the functional layer to
form a disconnecting section or a high-resistance section in the
functional layer in the inter-electrode region.
[0176] (12) A display unit including:
[0177] a plurality of first electrodes; and
[0178] a functional layer covering from the first electrode to an
inter-electrode region, and
[0179] having a disconnecting section or a high-resistance section
in the inter-electrode region, the disconnecting section or the
high-resistance section being formed by local application of an
energy ray.
[0180] (13) The display unit according to (12), further
including:
[0181] a barrier provided in the inter-electrode region;
[0182] a second electrode facing the first electrode with the
functional layer in between; and
[0183] a terminal embedded in the barrier and electrically
connected to the second electrode.
[0184] The present disclosure contains subject matter related to
that disclosed in Japanese Priority Patent Application JP
2012-172181 filed in the Japan Patent Office on Aug. 2, 2012, the
entire contents of which is hereby incorporated by reference.
[0185] It should be understood by those skilled in the art that
various modifications, combinations, sub-combinations, and
alternations may occur depending on design requirements and other
factors insofar as they are within the scope of the appended claims
or the equivalents thereof.
REFERENCE SIGNS LIST
[0186] 1, 1A, 1B, 2, 3, 4 display unit [0187] 10, 10R, 10G, 10B
organic EL device [0188] L1 pixel drive circuit forming layer
[0189] L2 light-emitting device forming layer [0190] 11 support
substrate [0191] 12 TFT layer [0192] 13 planarization layer [0193]
13H connection hole [0194] 14, 14A, 14B first electrode [0195] 15
hole injection layer [0196] 15D, 16D disconnecting section [0197]
16 light-emitting layer [0198] 17 second electrode [0199] 17T
terminal [0200] 18 protective layer [0201] 19 barrier [0202] 21
counter substrate
* * * * *