U.S. patent application number 14/535866 was filed with the patent office on 2015-06-18 for chemical mechanical polishing conditioner with high quality abrasive particles.
The applicant listed for this patent is Kinik Company. Invention is credited to Jui-Lin CHOU.
Application Number | 20150165588 14/535866 |
Document ID | / |
Family ID | 53367292 |
Filed Date | 2015-06-18 |
United States Patent
Application |
20150165588 |
Kind Code |
A1 |
CHOU; Jui-Lin |
June 18, 2015 |
CHEMICAL MECHANICAL POLISHING CONDITIONER WITH HIGH QUALITY
ABRASIVE PARTICLES
Abstract
The present invention relates to a chemical mechanical polishing
conditioner with high quality abrasive particles, comprising a
substrate; a binding layer disposed on the substrate; and a
plurality of abrasive particles placed on the binding layer, and
the abrasive particles are placed on the substrate by the binding
layer; wherein the chemical mechanical polishing conditioner with
high quality abrasive particles is moved to pass through a water
jet and a high pressure fluid by a conveying device, and the high
pressure fluid is applied on the abrasive particles through the
water jet to remove one or more than one risk diamond included in
the abrasive particles. Therefore, the present invention can
improve a problem of conventional risk diamond residue on the
conditioner, thereby enhancing the polishing performance and
service time of the conditioner.
Inventors: |
CHOU; Jui-Lin; (Hualien
County, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Kinik Company |
Taipei City |
|
TW |
|
|
Family ID: |
53367292 |
Appl. No.: |
14/535866 |
Filed: |
November 7, 2014 |
Current U.S.
Class: |
451/56 ;
451/443 |
Current CPC
Class: |
B24B 53/017
20130101 |
International
Class: |
B24B 53/017 20060101
B24B053/017 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 16, 2013 |
TW |
102146375 |
Claims
1. A chemical mechanical polishing conditioner with high quality
abrasive particles, comprising: a substrate; a binding layer
disposed on a surface of the substrate; and a plurality of abrasive
particles embedded in the binding layer and fixed to the substrate
by the binding layer; wherein the chemical mechanical polishing
conditioner with high quality abrasive particles is moved to pass
through a water jet and a high pressure fluid by a conveying
device, and the high pressure fluid is applied on the abrasive
particles through the water jet to remove one or more than one risk
diamond included in the abrasive particles.
2. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 1, wherein the risk diamonds have twin
crystal structures, internal crack structures or diamonds embedded
in the binding layer with low encapsulation.
3. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 1, wherein the water jet comprises one
or more than one nozzles.
4. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 3, wherein the water jet comprises
three to five nozzles.
5. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 3, wherein these nozzles have the same
pore sizes of the nozzles.
6. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 3, wherein these nozzles have different
pore sizes of the nozzles.
7. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 3, wherein different spraying angles
are formed by the nozzles.
8. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 1, wherein the water jet is a fixing
mechanism, such that the high pressure fluid is applied to fixing
positions of these abrasive particles.
9. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 1, wherein the water jet is a rotating
mechanism, such that the high pressure fluid is applied to
non-fixing positions of these abrasive particles.
10. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 9, wherein a rotating speed of the
rotating mechanism is 10 rpm to 1,050 rpm.
11. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 1, wherein a pressure of the high
pressure applied to these abrasive particles is 1,000 psi to 32,000
psi.
12. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 1, wherein a moving speed of the
conveying device is 10 mm/min to 1,000 mm/min.
13. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 1, wherein the water jet has a cage
lifter for adjust a spacing between the water jet and the chemical
mechanical polishing conditioner with high quality abrasive
particles.
14. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 1, wherein the high pressure fluid is
pure water, ultra-pure water and non-corrosive fluid.
15. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 1, wherein the abrasive particles are
artificial diamonds, nature diamonds, polycrystalline diamonds or
cubic boron nitride.
16. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 1, wherein the abrasive particles have
a particle size of 30 to 600 .mu.m.
17. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 1, wherein a composition of the binding
layer is made of a ceramic material, a brazing material, an
electroplating material, a metallic material, or a polymer
material.
18. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 17, wherein the brazing material is at
least one selected from the group consisting of iron, cobalt,
nickel, chromium, manganese, silicon, aluminum, and combinations
thereof.
19. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 17, wherein the polymer material is
epoxy resin, polyester resin, polyacrylic resin, phenolic
resin.
20. The chemical mechanical polishing conditioner with high quality
abrasive particles of claim 1, wherein the substrate is made of
stainless steel substrate, mold steel substrate, metal alloy
substrate, ceramic material substrate or polymer material substrate
or combinations thereof.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application claims the benefits of the Taiwan Patent
Application Serial Number 102146375, filed on Dec. 16, 2013, the
subject matter of which is incorporated herein by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a chemical mechanical
polishing conditioner with high quality abrasive particles, and
more particularly to a chemical mechanical polishing conditioner
with high quality abrasive particles which is applied to remove
risk diamonds.
[0004] 2. Description of Related Art
[0005] Chemical mechanical polishing (CMP) is a common polishing
process in various industries, which can be used to grind the
surfaces of various articles, including ceramics, silicon, glass,
quartz, or a metal chip. In addition, with the rapid development of
integrated circuits, chemical mechanical polishing becomes one of
the common techniques for wafer planarization because it can
achieve an object of whole planarization.
[0006] During the chemical mechanical polishing process of
semiconductor, impurities or uneven structure on the surface of a
wafer are removed by contacting the wafer (or the other
semiconductor elements) with a polishing pad and using a polishing
liquid if necessary, through the chemical reaction and mechanical
force. When the polishing pad has been used for a certain period of
time, the polishing performance and efficiency are reduced because
the debris produced in the polishing process may accumulate on the
surface of the polishing pad. Therefore, a conditioner can be used
to condition the surface of the polishing pad, such that the
surface of the polishing pad is re-roughened and maintained at an
optimum condition for polishing. In the process for manufacturing a
conditioner, it is necessary to dispose an abrasive layer by mixing
abrasive particles and a binding layer on the substrate surface,
and to fix the abrasive layer to the surface of the substrate by
brazing or sintering methods. However, during the manufacturing
process of the above conditioner, or when the conditioner
conditions a polishing pad, the diamond particles on the
conditioner may be broken to form risk diamonds, such that the
conditioner may become a defective one. Therefore, it is necessary
to implement a detection process to ensure an expected polishing
effect in the subsequent steps. It is a known method to use an
optical microscope (OM) to perform a visual observation whether a
pad conditioner has any risk diamond or not. When risk diamonds are
observed, the positions would be marked by a marked method (such as
oil pen) and taken a photograph. Finally, the photos are taken
before and after the grinding process which would be compared by a
person, and the risk diamonds are removed by a person or a
mechanical method to avoid the risk diamonds residue on the
conditioner.
[0007] In the known technology, such as Taiwan Patent Publication
No. 201102215, it discloses that methods and systems for removing
dirt and/or debris from a CMP pad surface during CMP pad processing
are provided. In one aspect, a method for removing debris from a
CMP pad surface during CMP processing can include rotating a CMP
pad having a polishing surface, and pressing a CMP pad dresser into
the polishing surface of the CMP pad, the CMP pad dresser having a
plurality of superabrasive particles coupled thereto and oriented
toward the CMP pad. The method can further include spraying a jet
of liquid onto the polishing surface of the CMP pad with sufficient
force to dislodge debris from the polishing surface of the CMP
pad.
[0008] Besides, in the other known technology, such as Taiwan
Patent Issue No. 438650, it discloses that a method for recycling a
diamond wheel in chemical mechanical polishing (CMP) comprises
using a water jet at a high pressure of 1500 to 6000 psi to spray a
deionized (DI) water on the surface of a diamond wheel with
accumulated SiO.sub.2 thereby removing most of the powder scraps;
mounting the diamond wheel on a heating platform at 40.degree. C.
and using a high-pressure CO.sub.2 gas at 0.degree. C. and a
pressure of 800 to 6000 psi, followed by a clean dry air, to flush
the surface of the diamond wheel thereby removing the residual
SiO.sub.2; and mounting the diamond wheel in an ultrasonic water
tank to wash off the remaining impurities by vibrating the DI
water. The use of the above mentioned three steps can remove most
of the SiO.sub.2 on the surface of the diamond wheel and recycle
the diamond wheel.
[0009] However, the above-mentioned chemical mechanical polishing
conditioner with a water jet is used to remove debris on the
surfaces of a conditioner or a polishing pad to maintain polishing
performance between the conditioner and the polishing pad during
polishing process. But, the above-mentioned chemical mechanical
polishing conditioner cannot improve a problem of risk diamonds
residue on the conditioner during manufacturing process. Therefore,
there is an urgent need for a chemical mechanical polishing
conditioner with high quality abrasive particles, which is used to
remove risk diamonds on the surface of the conditioner, thereby
avoiding scratches and breakages produced on the polishing pad due
to the risk diamonds during a chemical mechanical polishing
process.
SUMMARY OF THE INVENTION
[0010] An object of the present invention is to provide a chemical
mechanical polishing conditioner with high quality abrasive
particles, which is used to remove risk diamonds on the chemical
mechanical polishing conditioner by a water jet, thereby avoiding
scratches and breakages produced on the polishing pad due to the
risk diamonds during a chemical mechanical polishing process.
[0011] During a manufacturing process of the general chemical
mechanical polishing conditioner, the brazing powder comprising a
metal alloy and the diamond particles are disposed on a surface of
a substrate made of stainless steel and performed a heat brazing
process, such that the diamond particles are fixed on the surface
of the substrate by the brazing ally to complete the chemical
mechanical polishing conditioner. However, during an actual process
for manufacturing the chemical mechanical polishing conditioner, a
part of diamond particles include risk diamonds having twin crystal
structures, internal crack structures or diamonds embedded in the
binding layer with low encapsulation, wherein the risk diamonds may
be come from the source of materials of the diamonds themselves, or
the diamond particles in the brazing process or the conditioner in
the post-processing procedure result in diamond particles having
defects. The risk diamond is different from general diamond
particles with perfect crystal forms which can provide excellent
and stable polishing performance; therefore, the risk diamonds on
the chemical mechanical polishing conditioner are removed by the
water jet and the high pressure fluid of the present invention,
thereby avoiding scratches and breakages produced on the polishing
pad due to the risk diamonds during a chemical mechanical polishing
process. Besides, the chemical mechanical polishing conditioner of
the present invention cannot only remove risk diamonds on the
chemical mechanical polishing conditioner by the water jet and the
high pressure fluid, but also supply diamond particles with perfect
crystal forms for leaving positions after removing risk diamonds to
remain numbers and arrangement patterns of diamond particles
positioned on the surface of original conditioner.
[0012] To achieve the above object, the present invention provides
a chemical mechanical polishing conditioner, comprising: a
substrate; a binding layer disposed on a surface of the substrate;
and a plurality of abrasive particles embedded in a surface of the
binding layer and fixed to the surface of the substrate by the
binding layer; wherein the chemical mechanical polishing
conditioner with high quality abrasive particles is moved to pass
through a water jet and a high pressure fluid by a conveying
device, and the high pressure fluid is applied to the abrasive
particles through the water jet to remove one or more than one risk
diamonds included in the abrasive particles.
[0013] In above-mentioned the chemical mechanical polishing
conditioner with high quality abrasive particles of the present
invention, the risk diamonds can have twin crystal structures,
internal crack structures or diamonds embedded in the binding layer
with low encapsulation; wherein the risk diamonds may be come from
the source of materials of the diamonds themselves, or the diamond
particles in the brazing process or the conditioner in the
post-processing procedure result in diamond particles having
defects. The risk diamond is different from general diamond
particles which can provide excellent and stable polishing
performance. These risk particles have twin crystal structures,
internal crack structures or diamonds embedded in the binding layer
with low encapsulation present in the inside or surface of the
diamond particles; therefore, the intensity and crystal forms of
diamond particles can be destroyed, and the polishing performance
of these risk diamonds become worse.
[0014] In above-mentioned the chemical mechanical polishing
conditioner with high quality abrasive particles of the present
invention, the water jet can include one or a plurality of nozzles,
and the number of the nozzles included in the water jet may be
randomly varied based on the user's requirements or quality
requirements of these diamond particles; wherein in an aspect of
the present invention, the water jet can include two to ten
nozzles, and in another aspect of the present invention, the water
jet can include three to five nozzles. Besides, in above-mentioned
the chemical mechanical polishing conditioner with high quality
abrasive particles of the present invention, pore sizes of the
nozzles of these water jets may be randomly varied based on the
user's requirements or quality requirements of these diamond
particles; wherein in an aspect of the present invention, these
water jets can have the same pore sizes of the nozzles; and in
another aspect of the present invention, these water jets can have
different pore sizes of the nozzles, but the present invention is
not limited thereto.
[0015] In above-mentioned the chemical mechanical polishing
conditioner with high quality abrasive particles of the present
invention, the different spray angles can be formed by these
nozzles of the present invention, which is different from a
traditional water jet limited to a washing function through a
single nozzle and a single angle. The water jet of the present
invention may be randomly varied based on the user's requirements
or quality requirements of these diamond particles to form various
spray angles toward these abrasive particles on the surface of the
conditioner. Besides, in above-mentioned the chemical mechanical
polishing conditioner with high quality abrasive particles of the
present invention, the water jet can be a fixing mechanism, such as
a fixing water jet, such that the high pressure fluid is applied to
fixing positions of these abrasive particles by the fixing water
jet or the nozzles to remove the risk diamonds included in these
abrasive particles. Alternatively, the water jet is a rotating
mechanism, such as a rotating water jet, such that the high
pressure fluid is applied to non-fixing positions of these abrasive
particles by a continuous rotating water jet or the nozzles.
[0016] In above-mentioned the chemical mechanical polishing
conditioner with high quality abrasive particles of the present
invention, a rotating speed of the rotating mechanism may be
randomly varied based on the user's requirements or quality
requirements of these diamond particles; wherein the rotating speed
of the rotating mechanism can be 5 rpm to 2,000 rpm, and in an
aspect of the present invention, the rotating speed of the rotating
mechanism can be 10 rpm to 1,050 rpm. Besides, in above-mentioned
the chemical mechanical polishing conditioner with high quality
abrasive particles of the present invention, a pressure of the high
pressure fluid applied to these abrasive particles may be randomly
varied based on the user's requirements or quality requirements of
these diamond particles; wherein the pressure of the high pressure
fluid applied to these abrasive particles can be 300 psi
(lb.sub.f/in.sup.2) to 40,000 psi, and in an aspect of the present
invention, the pressure of the high pressure fluid applied to these
abrasive particles can be 1,000 psi to 32,000 psi.
[0017] In above-mentioned the chemical mechanical polishing
conditioner with high quality abrasive particles of the present
invention, the chemical mechanical polishing conditioner with high
quality abrasive particles can be moved to pass through a water jet
and a high pressure fluid by a conveying device, such that the high
pressure fluid is applied to the abrasive particles through the
water jet to remove one or more than one risk diamonds included in
the abrasive particles. Furthermore, a moving speed of the
conveying device may be randomly varied based on the user's
requirements or quality requirements of these diamond particles;
wherein the moving speed of the conveying device can be 10 mm/min
to 1,000 mm/min.
[0018] In above-mentioned the chemical mechanical polishing
conditioner with high quality abrasive particles of the present
invention, the water jet can has a cage lifter for adjusting a
spacing between the water jet and the chemical mechanical polishing
conditioner with high quality abrasive particles, and adjusting the
pressure of the high pressure fluid applied to these abrasive
particles by varying the spacing while the pressure of the high
pressure fluid is a constant. Besides, the spacing between the
water jet and the conditioner with high quality abrasive particles
may be randomly varied based on the user's requirements or quality
requirements of these diamond particles, but the present invention
is not be limited thereto.
[0019] In above-mentioned the chemical mechanical polishing
conditioner with high quality abrasive particles of the present
invention, the high pressure fluid can be any fluid capable of
removing risk diamonds, such as pure water, ultra-pure water,
non-corrosive fluid, and the like or combinations thereof, but the
present invention is not be limited thereto. The above-mentioned
ultra-pure water means the water in which main impurities are
removed through an ion exchange resin method, an activated carbon
method and a filter membrane method under a resistivity reached
18.2 M.OMEGA.cm at a temperature of 25.degree. C., and corrosion or
destruction produced on the binding layer of the conditioner due to
the high pressure fluid can be reduced.
[0020] In above-mentioned the chemical mechanical polishing
conditioner with high quality abrasive particles of the present
invention, these abrasive particles may be artificial diamonds,
nature diamonds, polycrystalline diamonds or cubic boron nitride.
In a preferred aspect of the present invention, the abrasive
particles may be artificial diamonds. Furthermore, in
above-mentioned the chemical mechanical polishing conditioner with
high quality abrasive particles of the present invention, the
abrasive particles may have a particle size of 30 to 600 .mu.m. In
a preferred aspect of the present invention, the abrasive particles
may have a particle size of 200 .mu.m.
[0021] In above-mentioned the chemical mechanical polishing
conditioner with high quality abrasive particles of the present
invention, the compositions of the binding layer or the abrasive
particles may be varied based on the polishing conditions and
requirements, which includes: a ceramic material, a brazing
material, an electroplating material, a metallic material, or a
polymer material, but the present invention is not limited thereto.
In an aspect of the present invention, the binding layer can be
made of a brazing material, wherein the brazing material can be at
least one selected from the group consisting of iron, cobalt,
nickel, chromium, manganese, silicon, aluminum, and combinations
thereof. In another aspect of the present invention, the polymer
material can be epoxy resin, polyester resin, polyacrylic resin, or
phenolic resin. Besides, in above-mentioned the chemical mechanical
polishing conditioner with high quality abrasive particles of the
present invention, the materials and sizes of the substrate may be
varied based on the polishing conditions and requirements; wherein
the materials of the substrate can be stainless steel, mold steel,
metal alloy, ceramic material or polymer material etc., but the
present invention is not be limited thereto. In a preferred aspect
of the present invention, the material of the substrate may be a
stainless steel substrate.
[0022] In summary, according to the chemical mechanical polishing
conditioner with high quality abrasive particles of the present
invention, the risk diamonds included in the abrasive particles can
be removed, thereby avoiding scratches and breakages produced on
the polishing pad due to the risk diamonds during a chemical
mechanical polishing process.
BRIEF DESCRIPTION OF THE DRAWINGS
[0023] The above and other objects, features and other advantages
of the present invention will be more clearly understood from the
following detailed description taken in conjunction with the
accompanying drawings, in which:
[0024] FIG. 1A shows a schematic diagram of a device of the
chemical mechanical polishing conditioner with high quality
abrasive particles of the present invention.
[0025] FIG. 1B shows a schematic diagram of the chemical mechanical
polishing conditioner with high quality abrasive particles
according to Example 1 of the present invention.
[0026] FIG. 2 shows a schematic diagram of the chemical mechanical
polishing conditioner with high quality abrasive particles
according to Example 2 of the present invention.
[0027] FIG. 3 shows a schematic diagram of the chemical mechanical
polishing conditioner with high quality abrasive particles
according to Example 3 of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[0028] Hereinafter, the actions and the effects of the present
invention will be explained in more detail via specific examples of
the invention. However, these examples are merely illustrative of
the present invention and the scope of the invention should not be
construed to be defined thereby.
Example 1
[0029] The chemical mechanical polishing conditioner with high
quality abrasive particles of the present invention can be used to
remove the risk diamonds on the chemical mechanical polishing
conditioner, thereby avoiding scratches and breakages produced on
the polishing pad due to the risk diamonds during a chemical
mechanical polishing process. Please refer to FIG. 1, FIG. 1A shows
a schematic diagram of a device of the chemical mechanical
polishing conditioner with high quality abrasive particles of the
present invention, and FIG. 1B shows a schematic diagram of the
chemical mechanical polishing conditioner with high quality
abrasive particles according to Example 1 of the present invention.
As shown in FIG. 1, the chemical mechanical polishing conditioner
10 with high quality abrasive particles of the present invention,
comprising: a substrate 101 made of stainless steel material; a
binding layer 102 made of a nickel-based metallic brazing material;
and a plurality of abrasive particles 103 embedded in the binding
layer 102 by a heat-brazing method, and these abrasive particles
103 fixed to the surface of the substrate by the binding layer 102;
wherein these abrasive particles 103 are formed of artificial
diamonds having particle sizes of 200 .mu.m, and the abrasive
particles 103 are disposed by using a known diamond distribution
technique (for example, template distribution), and the spacing and
arrangement of the abrasive particles 12 are controlled by the
template (not shown in figures). Besides, a few risk diamonds 104
having twin crystal structures, internal crack structures or
diamonds embedded in the binding layer with low encapsulation are
present in the above-mentioned these abrasive particles 103.
[0030] As shown in FIG. 1, the chemical mechanical polishing
conditioner with high quality abrasive particles 10 can be moved to
pass through a water jet 12 and a high pressure fluid 13 by a
conveying device 11; wherein the water jet 12 comprises four
nozzles 120 connecting to a same main pipe. Further, the high
pressure fluid 13 is pure water and is applied to the surface of
the chemical mechanical polishing conditioner 10 by the water jet
12. The high pressure fluid 13 can be control toward these abrasive
particles 103 in vertical direction or a vertical angle through the
nozzles 120, and these abrasive particles 103 are received a stress
from the high pressure fluid 13, such that the risk diamonds 104
having twin crystal structures, internal crack structures or
diamonds embedded in the binding layer with low encapsulation are
removed due to worse adhesive strength between the risk diamonds
104 and the binding layer 102 to remove one or more than one risk
diamonds 104 included in the abrasive particles 103. Besides, in
the chemical mechanical polishing conditioner 10 with high quality
abrasive particles of Example 1, a pressure of the high pressure
fluid 13 applied to the abrasive particles 103 is 1,000 psi to
32,000 psi, and a moving speed of the conveying device 11 is 10
mm/min to 1,000 mm/min. Furthermore, the above-mentioned water jet
12 further comprises a cage lifter 14 for adjusting the spacing
between the water jet 12 and the chemical mechanical polishing
conditioner 10, and adjusting the pressure of the high pressure
fluid 13 applied to these abrasive particles 103 by varying the
spacing.
[0031] As shown in FIG. 1B, the chemical mechanical polishing
conditioner 10 with high quality abrasive particles is made as
following. The binding layer 102 made of a metallic brazing alloy
and these abrasive particles 103 are disposed on the surface of the
substrate 101 made of stainless steel, and then these abrasive
particles 103 are fixed on the surface of the substrate 101 by the
binding layer 102 after performing a heat-brazing method to
accomplish the chemical mechanical polishing conditioner 10 with
high quality abrasive particles. However, the risk diamonds have
twin crystal structures, internal crack structures or diamonds
embedded in the binding layer with low encapsulation include in
these abrasive particles 103; therefore, the water jet 12 (please
refer to FIG. 1A together) and the high pressure fluid 13 of the
present invention are used to remove risk diamonds 104 on the
chemical mechanical polishing conditioner 10, thereby avoiding
scratches and breakages produced on the polishing pad due to the
risk diamonds 104 during a chemical mechanical polishing
process.
Example 2
[0032] Please refer to FIG. 2, FIG. 2 shows a schematic diagram of
the chemical mechanical polishing conditioner with high quality
abrasive particles according to Example 2 of the present invention.
The device of the chemical mechanical polishing conditioner 10 with
high quality abrasive particles of Example 2 is substantially the
same as the above Example 1, but the differences are that the
nozzles 120 of Example 1 can control the high pressure fluid 13
toward these abrasive particles 103 in vertical angle; however the
nozzles 220 of Example 2 can control the high pressure fluid 23
toward these abrasive particles 203 in various angles, such that
the risk diamonds 204 having twin crystal structures, internal
crack structures or diamonds embedded in the binding layer with low
encapsulation are removed due to worse adhesive strength between
the risk diamonds 204 and the binding layer 202. Further, the
angles of the high pressure fluid 23 toward abrasive particles 203
may be randomly varied based on the requirements. The present
invention is different from the nozzles of the traditional water
jet which is only designed as a single nozzle and a single spraying
angle; therefore, the traditional water jet only has functions for
removing debris and cleaning, and cannot accomplish functions for
removing the risk diamonds 204 of the present invention. As shown
in FIG. 2, the water jet 22 comprises four nozzles 220, and the
nozzles 220 can control the high pressure fluid 23 (shown as dotted
arrow in FIG. 2) toward these abrasive particles 203 on the surface
of the chemical mechanical polishing conditioner 20 in different
directions; therefore, each pressure applied to these abrasive
particles 203 is also different, such that the risk diamonds having
twin crystal structures, internal crack structures or diamonds
embedded in the binding layer with low encapsulation can be removed
from the binding layer 202 on the substrate 201 to avoid scratches
and breakages produced on the polishing pad due to the risk
diamonds during a chemical mechanical polishing process.
Example 3
[0033] Please refer to FIG. 3, FIG. 3 shows a schematic diagram of
the chemical mechanical polishing conditioner with high quality
abrasive particles according to Example 3 of the present invention.
The device of the chemical mechanical polishing conditioner 10 with
high quality abrasive particles of Example 3 is substantially the
same as the above Example 1, but the differences are that the water
jet 12 of Example 1 is a fixing water jet, such that the high
pressure fluid 13 is applied to the fixing positions of these
abrasive particles 103 through the fixing water jet 12 or nozzles
120; however, the water jet 32 of Example 3 is a rotary water jet,
such that the high pressure fluid 33 is applied to the non-fixing
positions of these abrasive particles 303 through the water jet 32
or nozzles 320 rotated continuously. As shown in FIG. 3, the water
jet 32 is a rotary water jet, such that the high pressure fluid 33
is applied to the non-fixing positions of these abrasive particles
303 through the water jet 32 or nozzles 320 rotated continuously;
wherein the rotating speed of the water jet 32 is 10 rpm to 1,050
rpm, and the rotating speed may be varied based on the user's
requirements. The high pressure fluid 33 is applied to non-fixing
positions of these abrasive particles 303, such that the risk
diamonds 304 having twin crystal structures, internal crack
structures or diamonds embedded in the binding layer with low
encapsulation are more easily removed from the binding layer 302 on
the substrate 301 to shorten a treatment time of the high pressure
fluid 33 applied to these abrasive particles 303, and to remove
effectively the risk diamonds 304 on the chemical mechanical
polishing conditioner 30, thereby improving service life of the
polishing pad.
[0034] In above-mentioned the chemical mechanical polishing
conditioner with high quality abrasive particles of the present
invention, the water jet may be varied based on the polishing
conditions or the user's requirements, such as the number of the
nozzles, pore sizes of the nozzles, the angles of the high pressure
toward these abrasive particles, the designs of the fixing
mechanism or the rotating mechanism, and adjusting the spacing
between the water jet and the chemical mechanical polishing
conditioner by the cage lifter. Further, various parameters of the
rotating speed of rotating mechanism, the pressure of the high
pressure fluid applied to these abrasive particles and the moving
speed of the conveying device are adjusted to accomplish the user's
requirements or quality requirements of these abrasive particles.
Therefore, the risk diamonds in the abrasive particles can be
removed effectively by the chemical mechanical polishing
conditioner with high quality abrasive particles of the present
invention to avoid scratches and breakages produced on the
polishing pad during a chemical mechanical polishing process.
[0035] It should be understood that these examples are merely
illustrative of the present invention and the scope of the
invention should not be construed to be defined thereby, and the
scope of the present invention will be limited only by the appended
claims.
* * * * *