U.S. patent application number 14/580151 was filed with the patent office on 2015-05-21 for method for manufacturing metal-insulator-metal capacitor structure.
This patent application is currently assigned to UNITED MICROELECTRONICS CORPORATION. The applicant listed for this patent is UNITED MICROELECTRONICS CORPORATION. Invention is credited to YING-TU CHEN, JI FENG, HAI-LONG GU, DUAN-QUAN LIAO.
Application Number | 20150140778 14/580151 |
Document ID | / |
Family ID | 48223134 |
Filed Date | 2015-05-21 |
United States Patent
Application |
20150140778 |
Kind Code |
A1 |
FENG; JI ; et al. |
May 21, 2015 |
METHOD FOR MANUFACTURING METAL-INSULATOR-METAL CAPACITOR
STRUCTURE
Abstract
A method for manufacturing the MIM capacitor structure is
provided. A first damascene electrode layer is formed in the first
opening formed in a first dielectric layer. An insulating barrier
layer is formed to cover the first dielectric layer and the first
damascene electrode layer. A second opening and a third opening are
formed in the second dielectric layer formed on the insulating
barrier layer. The second opening and the third opening are located
above the first damascene electrode layer to expose a portion of
the insulating barrier layer therefrom. The insulating barrier
layer in the third opening is removed to expose a portion of the
first damascene electrode layer. A second damascene electrode layer
is formed in the second opening to be contacted with the insulating
barrier layer and a dual damascene structure is formed in the third
opening to be contacted with the first damascene electrode
layer.
Inventors: |
FENG; JI; (Singapore,
SG) ; LIAO; DUAN-QUAN; (Singapore, SG) ; GU;
HAI-LONG; (Singapore, SG) ; CHEN; YING-TU;
(Singapore, SG) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
UNITED MICROELECTRONICS CORPORATION |
Hsinchu |
|
TW |
|
|
Assignee: |
UNITED MICROELECTRONICS
CORPORATION
Hsinchu
TW
|
Family ID: |
48223134 |
Appl. No.: |
14/580151 |
Filed: |
December 22, 2014 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13292156 |
Nov 9, 2011 |
8946854 |
|
|
14580151 |
|
|
|
|
Current U.S.
Class: |
438/396 |
Current CPC
Class: |
H01L 23/5223 20130101;
H01L 2924/0002 20130101; H01L 21/283 20130101; H01L 2924/0002
20130101; H01L 21/3213 20130101; H01L 28/60 20130101; H01L 2924/00
20130101 |
Class at
Publication: |
438/396 |
International
Class: |
H01L 49/02 20060101
H01L049/02; H01L 21/3213 20060101 H01L021/3213; H01L 21/283
20060101 H01L021/283 |
Claims
1. A method for manufacturing a MIM capacitor, comprising: forming
a first opening in a first dielectric layer; filling a first
damascene electrode layer in the first opening; forming an
insulating barrier layer to cover the first dielectric layer and
the first damascene electrode layer; forming a second dielectric
layer on the insulating barrier layer; forming a second opening and
a third opening in the second dielectric layer, the second opening
and the third opening being located above the first damascene
electrode layer to expose a portion of the insulating barrier layer
therefrom; removing the insulating barrier layer in the third
opening to expose a portion of the first damascene electrode layer;
and forming a second damascene electrode layer in the second
opening to be contacted with the insulating barrier layer and
forming a dual damascene structure in the third opening to be
contacted with the first damascene electrode layer.
2. The method as claimed in claim 1, wherein the step of filling
the first damascene electrode layer in the first opening comprises:
forming a metal layer on the first dielectric layer and filling the
metal layer into the first opening; and removing a portion of the
metal layer outside the first opening to form the first damascene
electrode layer.
3. The method as claimed in claim 2, wherein a chemical mechanical
polishing process is applied to remove the portion of the metal
layer outside the first opening to form the first damascene
electrode layer.
4. The method as claimed in claim 2, wherein the metal layer is a
copper layer.
5. The method as claimed in claim 1, wherein the step of forming
the insulating barrier layer to cover the first dielectric layer
and the first damascene electrode layer comprises: forming the
insulating barrier layer in a single layer structure, and wherein a
material of the insulating barrier layer is selected from a group
consisting of silicon nitride (SiN), silicon carbide (SiC), silicon
carbonitride (SiCN) and silicon oxynitride (SiON).
6. The method as claimed in claim 1, wherein the step of forming
the insulating barrier layer to cover the first dielectric layer
and the first damascene electrode layer comprises of forming the
insulating barrier layer in a multilayer structure.
7. The method as claimed in claim 6, wherein forming the insulating
barrier layer in the multilayer structure comprises: forming a
first insulating layer on the first dielectric layer, and wherein a
material of the first insulating layer is selected from a group
consisting of silicon nitride (SiN), silicon carbide (SiC), silicon
carbonitride (SiCN) and silicon oxynitride (SiON); and forming a
second insulating layer on the first insulating layer, and wherein
a material of the second insulating layer is selected from a group
consisting of undoped silicate glass (USG), tantalum oxide
(Ta.sub.2O.sub.5), zirconium oxide (ZrO.sub.2) and aluminum oxide
(Al.sub.2O.sub.3).
8. The method as claimed in claim 1, wherein forming the third
opening in the second dielectric layer comprising: forming at least
one via; and forming one trench located above and communicated with
the at least one via.
9. The method as claimed in claim 8, wherein the third opening is
formed by a trench first process, a via first process or a
self-aligned process.
10. The method as claimed in claim 1, wherein the step of removing
the insulating barrier layer in the third opening to expose the
portion of the first damascene electrode layer comprises: forming a
patterned mask layer on the second dielectric layer to cover the
second opening and to expose the third opening; removing the
portion of the insulating barrier layer exposed from the patterned
mask; and removing the patterned mask layer.
11. The method as claimed in claim 1, wherein the step of forming a
second damascene electrode layer in the second opening and forming
a dual damascene structure in the third opening comprises: forming
a metal layer on the second dielectric layer and filling the metal
layer into the second opening to be contacted with the insulating
barrier layer and into the third opening to be contacted with the
first damascene electrode layer; and removing a portion of the
metal layer outside the second opening and the third opening to
form the second damascene electrode layer and the dual damascene
structure.
12. The method as claimed in claim 11, wherein a chemical
mechanical polishing process is applied to remove the portion of
the metal layer outside the second opening and the third opening to
form the second damascene electrode layer and the dual damascene
structure.
13. The method as claimed in claim 11, wherein the metal layer is a
copper layer.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This is a divisional application of U.S. patent application
Ser. No. 13/292156, filed on Nov. 9, 2011, which is currently
pending. The entirety of the above-mentioned patent application is
hereby incorporated by reference herein and made a part of this
specification.
FIELD OF THE INVENTION
[0002] The present invention relates to a capacitor structure, and
particularly to a method for manufacturing a metal-insulator-metal
(MIM) capacitor structure.
BACKGROUND OF THE INVENTION
[0003] Generally, a MIM capacitor comprises two metal electrodes
separated by an insulator. The MIM capacitor has advantages of
small size, stable capacitor value and little parasitic effect, and
so on.
[0004] With the development of the integrated circuit technology,
the MIM capacitor has been widely used so as to improve the
performance of the integrated circuit. Currently, in order to
electrically connect the MIM capacitor with other electronic
components, the MIM capacitor is usually integrated with an
interconnection structure. However, in a conventional process for
integrating the MIM capacitor with the interconnection structure,
it is necessary to form a number of insulating layers and a number
of metal layers. Thus, the conventional process for integrating the
MIM capacitor with the interconnection structure a number of
depositing steps and etching steps, thereby increasing the
production cost and causing the final integrated structure to be
complicated.
SUMMARY OF THE INVENTION
[0005] The present invention also provides a method for
manufacturing a MIM capacitor, which has a simple process so as to
reduce the production cost.
[0006] The present invention provides a method for manufacturing a
MIM capacitor. At first, a first opening is formed in a first
dielectric layer. A first damascene electrode layer is filled in
the first opening. Next, an insulating barrier layer is formed to
cover the first dielectric layer and the first damascene electrode
layer. Next, a second dielectric layer is formed on the insulating
barrier layer. Next, a second opening and a third opening are
formed in the second dielectric layer formed on the insulating
barrier layer. The second opening and the third opening are located
above the first damascene electrode layer to expose a portion of
the insulating barrier layer therefrom. Next, the insulating
barrier layer in the third opening is removed to expose a portion
of the first damascene electrode layer. Next, a second damascene
electrode layer is formed in the second opening to be contacted
with the insulating barrier layer and a dual damascene structure is
formed in the third opening to be contacted with the first
damascene electrode layer.
[0007] In one embodiment of the present invention, the step of
filling the first damascene electrode layer in the first opening
includes: forming a metal layer on the first dielectric layer and
filling the metal layer into the first opening; and removing a
portion of the metal layer outside the first opening to form the
first damascene electrode layer.
[0008] In one embodiment of the present invention, a chemical
mechanical polishing process is applied to remove the portion of
the metal layer outside the first opening to form the first
damascene electrode layer.
[0009] In one embodiment of the present invention, the metal layer
is a copper layer.
[0010] In one embodiment of the present invention, the step of
forming the insulating barrier layer to cover the first dielectric
layer and the first damascene electrode layer includes: forming the
insulating barrier layer in a single layer structure, and a
material of the insulating barrier layer is selected from a group
consisting of silicon nitride (SiN), silicon carbide (SiC), silicon
carbonitride (SiCN) and silicon oxynitride (SiON).
[0011] In one embodiment of the present invention, the step of
forming the insulating barrier layer to cover the first dielectric
layer and the first damascene electrode layer includes forming the
insulating barrier layer in a multilayer structure.
[0012] In one embodiment of the present invention, forming the
insulating barrier layer in the multilayer structure includes the
following steps. At first, a first insulating layer is formed on
the first dielectric layer, and a material of the first insulating
layer is selected from a group consisting of silicon nitride (SiN),
silicon carbide (SiC), silicon carbonitride (SiCN) and silicon
oxynitride (SiON). Next, a second insulating layer is formed on the
first insulating layer, and a material of the second insulating
layer is selected from a group consisting of undoped silicate glass
(USG), tantalum oxide (Ta.sub.2O.sub.5), zirconium oxide
(ZrO.sub.2) and aluminum oxide (Al.sub.2O.sub.3).
[0013] In one embodiment of the present invention, forming the
third opening in the second dielectric layer includes: forming at
least one via; and forming one trench located above and
communicated with the at least one via.
[0014] In one embodiment of the present invention, the third
opening is formed by a trench first process, a via first process or
a self-aligned process.
[0015] In one embodiment of the present invention, the step of
removing the insulating barrier layer in the third opening to
expose the portion of the first damascene electrode layer includes
the following steps. At first, a patterned mask layer is formed on
the second dielectric layer to cover the second opening and to
expose the third opening. Next, the portion of the insulating
barrier layer exposed from the patterned mask is removed. Next, the
patterned mask layer is removed.
[0016] In one embodiment of the present invention, the step of
forming a second damascene electrode layer in the second opening
and forming a dual damascene structure in the third opening
includes the following steps. At first, a metal layer is formed on
the second dielectric layer and is filled into the second opening
to be contacted with the insulating barrier layer and into the
third opening to be contacted with the first damascene electrode
layer. Then, a portion of the metal layer outside the second
opening and the third opening is removed to form the second
damascene electrode layer and the dual damascene structure.
[0017] In one embodiment of the present invention, a chemical
mechanical polishing process is applied to remove the portion of
the metal layer outside the second opening and the third opening to
form the second damascene electrode layer and the dual damascene
structure.
[0018] In one embodiment of the present invention, the metal layer
is a copper layer.
[0019] In the method for manufacturing the MIM capacitor according
to the embodiments of the present invention, the first damascene
electrode layer and the second damascene electrode layer are both
formed by a damascene process and are separated by the insulating
barrier layer. The insulating barrier can serve as not only an
insulator of the MIM capacitor, but also an etch stop layer during
forming the second damascene electrode layer. Thus, the MIM
capacitor has a simpler structure, thereby reducing the production
cost. The MIM capacitor further includes the dual damascene
structure formed in the second dielectric layer and the insulating
barrier layer and electrically connected to the first damascene
electrode layer. The dual damascene structure and the second
damascene electrode layer can be formed in a common step. Thus, the
process of integrating the MIM capacitor with an interconnection
structure can be simplified, thereby reducing the production
cost.
BRIEF DESCRIPTION OF THE DRAWINGS
[0020] The present invention will become more readily apparent to
those ordinarily skilled in the art after reviewing the following
detailed description and accompanying drawings, in which:
[0021] FIGS. 1A-1E illustrate a process flow of a method for
manufacturing a MIM capacitor in accordance with a first embodiment
of the present invention.
[0022] FIG. 2 illustrates a schematic view of a MIM capacitor with
an interconnection structure fabricated in accordance with the
first embodiment of the present invention.
[0023] FIGS. 3A-3H illustrate a process flow of a method for
manufacturing a MIM capacitor in accordance with a second
embodiment of the present invention.
[0024] FIG. 4 illustrates a schematic view of a MIM capacitor with
an interconnection structure fabricated in accordance with the
second embodiment of the present invention.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0025] The present invention will now be described more
specifically with reference to the following embodiments. It is to
be noted that the following descriptions of preferred embodiments
of this invention are presented herein for purpose of illustration
and description only. It is not intended to be exhaustive or to be
limited to the precise form disclosed.
[0026] FIGS. 1A-1E illustrate a process flow of a method for
manufacturing a MIM capacitor in accordance with a first embodiment
of the present invention.
[0027] Referring to FIG. 1A, in the present embodiment, for
example, a first damascene electrode layer 120 is formed in a first
dielectric layer 110 by a damascene process. In detail, at first, a
first opening 112 is formed in the first dielectric layer 110.
Then, a metal layer (e.g., a copper layer) is formed on the first
dielectric layer 110 and filled into the first opening 112.
Thereafter, a chemical mechanical polishing process is applied to
the metal layer so that a portion of the metal layer outside the
first opening 112 is removed. Thus, the first damascene electrode
layer 120 is formed and filled in the first opening 112. In the
present embodiment, the first damascene electrode layer 120 is a
copper damascene layer.
[0028] Referring to FIG. 1B, next, an insulating barrier layer 130
is formed to cover the first dielectric layer 110 and the first
damascene electrode layer 120. The insulating barrier layer 130 is
a single layer structure. A material of the insulating barrier
layer 130 can include silicon nitride (SiN), silicon carbide (SiC),
silicon carbonitride (SiCN), silicon oxynitride (SiON) or other
high dielectric constant materials. In the present embodiment, a
dielectric constant of the insulating barrier layer 130 is, for
example, 5. A thickness of the insulating barrier layer 130 is in a
range from 200 to 1500 angstroms.
[0029] Referring to FIG. 1C, next, a second dielectric 140 is
formed on and contacted with the insulating barrier layer 130. In
the present embodiment, a material of the second dielectric 140 and
a material of the first dielectric layer 110 are, for example,
oxide.
[0030] Referring to FIG. 1D to FIG. 1E, in the present embodiment,
for example, a second damascene electrode layer 150 is formed in
the second dielectric layer 140 by a damascene process. In detail,
at first, referring to FIG. 1D, a second opening 142 is formed in
the second dielectric layer 140 and is located above the first
damascene electrode layer 120 so as to expose a portion of the
insulating barrier layer 130.
[0031] During forming the second opening 142 in the second
dielectric layer 140, the insulating barrier layer 130 can serve as
an etch stop layer. That is, due to the etching selectivity of the
second dielectric layer 140 and the insulating barrier layer 130,
the etching process for forming the second opening 142 in the
second dielectric layer 140 will stop on the insulating barrier
layer 130. Thus, after the second opening 142 is formed, a portion
of insulating barrier layer 130 is exposed from the second opening
142.
[0032] Referring to FIG. 1E, next, a metal layer (e.g., a copper
layer) is formed on the second dielectric layer 140 and filled into
the second opening 142 to cover the portion of the insulating
barrier layer 230 exposed from the second opening 142. Then, a
chemical mechanical polishing process is applied to the metal layer
so that a portion of the metal layer outside the second opening 142
is removed. Thus, the second damascene electrode layer 150
contacted with the insulating barrier layer 130 is formed and
filled in the second opening 142. In the present embodiment, the
second damascene electrode layer 150 is a copper damascene
layer.
[0033] After the second damascene electrode layer 150 is formed,
the MIM capacitor 100 is manufactured by the method in accordance
with the first embodiment. In detail, the MIM capacitor 100
includes the first dielectric layer 110, the first damascene
electrode layer 120, the insulating barrier layer 130, the second
dielectric layer 140 and the second damascene electrode layer 150.
The first damascene electrode layer 120 is formed in the first
dielectric layer 110. The insulating barrier layer 130 covers the
first dielectric layer 110 and the first damascene electrode layer
120, and is the single layer structure. The second dielectric layer
140 is formed on and contacted with the insulating barrier layer
130. The second damascene electrode layer 150 is formed in the
second dielectric layer 140, is located above the first damascene
electrode layer 120 and is contacted with the insulating barrier
layer 130.
[0034] Particularly, in the MIM capacitor 100, the insulating
barrier layer 130 can further serve as a capacitor dielectric layer
between the first damascene electrode layer 120 and the second
damascene electrode layer 150. In other words, in the method for
manufacturing the MIM capacitor 100, it is not necessary to deposit
extra dielectric layers between the two electrode layers (i.e., the
first damascene electrode layer 120 and the second damascene
electrode layer 150). Thus, the method can reduce the production
cost of the MIM capacitor and manufacture the MIM capacitor 100
with a simple structure.
[0035] It is noted that, during forming the second opening 142, a
portion of the insulating barrier layer 130 can be etched due to an
over etch effect. Thus, after forming the second opening 142, a
final thickness of the insulating barrier layer 130 is determined
by an original deposition thickness of the insulating barrier layer
130 and an etching rate of an etchant for etching the second
dielectric layer 140 to the insulating barrier layer 130.
[0036] According to the method for manufacturing the MIM capacitor
100, it is also noted that, the fabrication of the MIM capacitor
100 can be integrated with a fabrication of an interconnection
structure. FIG. 2 illustrates a schematic view of a MIM capacitor
with an interconnection structure of an integrated circuit.
Referring to FIG. 2, in the present embodiment, an interconnection
structure 30, for example, a dual damascene interconnection
structure, is shown, which includes conductive wire layers 31, 32
and contact plugs 33, 34 electrically connecting the first
conductive layers 31, 32. To integrate the process, the
interconnection structure 30 is formed in the first dielectric
layer 110 and the second dielectric layer 140. The conductive wire
layer 31 and the contact plug 33 can be formed in the process of
forming the first damascene electrode layer 120. The conductive
wire layer 32 and the contact plug 34 can be formed in the process
of forming the second damascene electrode layer 150. It is noted
that, the insulating barrier layer 130 may not formed in the region
for forming the interconnection structure 30.
[0037] FIGS. 3A-3H illustrate a process flow of a method for
manufacturing a MIM capacitor in accordance with a second
embodiment of the present invention.
[0038] Referring to FIG. 3A, in the present embodiment, for
example, a first damascene electrode layer 220 is formed in a first
dielectric layer 210 by a damascene process. In detail, at first, a
first opening 212 is formed in the first dielectric layer 210.
Then, a metal layer (e.g., a copper layer) is formed on the first
dielectric layer 210 and filled into the first opening 212.
Thereafter, a chemical mechanical polishing process is applied to
the metal layer so that a portion of the metal layer outside the
first opening 212 is removed. Thus, the first damascene electrode
layer 220 is formed and filled in the first opening 212. In the
present embodiment, the first damascene electrode layer 220 is a
copper damascene layer.
[0039] Referring to FIG. 3B, next, an insulating barrier layer 230
is formed to cover the first dielectric layer 210 and the first
damascene electrode layer 220. The insulating barrier layer 230 can
be a single layer structure. A material of the insulating barrier
layer 230 can include silicon nitride (SiN), silicon carbide (SiC),
silicon carbonitride (SiCN), silicon oxynitride (SiON) or other
high dielectric constant materials. A thickness of the insulating
barrier layer 130 is in a range from 200 to 1500 angstroms. The
insulating barrier layer 230 can also be a multilayer structure,
for example, including a first insulating layer (not shown) and a
second insulating layer (not shown). The first insulating layer is
formed on the first dielectric layer 210 and the first damascene
electrode layer 220 and the second insulating layer is formed on
the first insulating layer. A material of the first insulating
layer is selected from a group consisting of silicon nitride (SiN),
silicon carbide (SiC), silicon carbonitride (SiCN) and silicon
oxynitride (SiON). A material of the second insulating layer is
selected from a group consisting of undoped silicate glass (USG),
tantalum oxide (Ta.sub.2O.sub.5), zirconium oxide (ZrO.sub.2) and
aluminum oxide (Al.sub.2O.sub.3). A thickness of the first
insulating layer is in a range from 200 to 1500 angstroms. A
thickness of the second insulating layer is in a range from 100 to
1000 angstroms.
[0040] Referring to FIG. 3C, next, a second dielectric 240 is
formed on and contacted with the insulating barrier layer 230. In
the present embodiment, a material of the second dielectric 240 and
a material of the first dielectric layer 210 are, for example,
oxide. The method for manufacturing the MIM capacitor in the second
embodiment is similar to the method for manufacturing the MIM
capacitor in the first embodiment except the following steps after
forming the second dielectric 240.
[0041] Referring to FIG. 3D to FIG. 3H, in the present embodiment,
for example, a second damascene electrode layer 250 is formed in
the second dielectric layer 240 by a damascene process and a dual
damascene structure 260 is formed in the second dielectric layer
240 and the insulating barrier layer 230 by a dual damascene
process. It is noted that, in fact, the second damascene electrode
layer 250 and the dual damascene structure 260 are formed in a
common damascene process.
[0042] In detail, referring to FIG. 3D, a second opening 242 and a
third opening 244 are formed in the second dielectric layer 240 and
are located above the first damascene electrode layer 220 so as to
expose a portion of the insulating barrier layer 230, respectively.
The third opening 244 includes at least a via 246 and a trench 245
located above and communicated with the via 246. In the present
embodiment, the third opening 244 includes one trench 245 and one
via corresponding to the one trench 245. In another embodiment, the
third opening can also includes one trench and a number of vias. In
other words, the number and the location of the trench 245 and the
via 246 are determined by the interconnection demand. It is noted
that, the third opening 244 can be formed by a trench first
process, a via first process or a self-aligned process, which are
not described here.
[0043] For example, the second opening 242 and the third opening
244 can be formed by a photolithography process. During forming the
second opening 242 and the third opening 244 in the second
dielectric layer 140, the insulating barrier layer 230 can serve as
an etch stop layer. That is, due to the etching selectivity of the
second dielectric layer 240 and the insulating barrier layer 230,
the etching process for forming the second opening 242 and the
third opening 244 in the second dielectric layer 240 will stop on
the insulating barrier layer 230. Thus, after the second opening
242 and the third opening 244 are formed, a portion of insulating
barrier layer 230 is exposed from the second opening 242 and the
third opening 244, respectively.
[0044] It is noted that, during forming the second opening 242 and
the third opening 244, a portion of the insulating barrier layer
230 can be etched due to an over etch effect. Thus, after forming
the second opening 242 and the third opening 244, a final thickness
of the insulating barrier layer 230 is determined by an original
deposition thickness of the insulating barrier layer 230 and an
etching rate of an etchant for etching the second dielectric layer
240 to the insulating barrier layer 230.
[0045] Next, the portion of the insulating barrier layer 230
exposed from the third opening 244 is removed so as to expose a
portion of the first damascene electrode layer 220, thereby forming
the dual damascene opening 262. In the present embodiment,
referring to FIG. 3E, a patterned mask layer 270 is formed on the
second dielectric layer 240 to cover the second dielectric layer
240 and the second opening 242 and to expose the third opening 244.
For example, a material of the patterned mask layer 270 can be a
photoresist material.
[0046] Referring to FIG. 3F, next, the portion of the insulating
barrier layer 230 exposed from the patterned mask 270 is removed.
For example, an etchant for etching the insulating barrier layer
230 is selected to etch the insulating barrier layer 230 exposed
from the patterned mask 270 so that the portion of the insulating
barrier layer 230 exposed from the patterned mask 270 is removed so
as to expose the portion of the first damascene electrode layer
220. It is noted that, other suitable method for removing the
portion of the insulating barrier layer 230 exposed from the
patterned mask 270 can also be used. Referring to 3G, next, the
patterned mask layer 270 is removed, thereby forming the dual
damascene opening 262 in the second dielectric layer 240 and the
insulating barrier layer 230.
[0047] Referring to FIG. 3H, next, a metal layer (e.g., a copper
layer) is formed on the second dielectric layer 240 and is filled
into the second opening 242 to cover the portion of the insulating
barrier layer 230 exposed from the second opening 242 and is filled
into the dual damascene opening 262 to cover the portion of the
first damascene electrode layer 220 exposed from the dual damascene
opening 262. Then, a chemical mechanical polishing process is
applied to the metal layer so that a portion of the metal layer
outside the second opening 242 and the dual damascene opening 262
is removed. Thus, the second damascene electrode layer 250
contacted with the insulating barrier layer 230 is formed and
filled in the second opening 242, and the dual damascene structure
260 electrically connected to the first damascene electrode layer
220 is formed and filled in the dual damascene opening 262. In the
present embodiment, the second damascene electrode layer 250 is a
copper damascene layer, and the dual damascene structure 260 is a
copper dual damascene layer. That is, a material of the second
damascene electrode layer 250 is identical to a material of the
dual damascene structure 260.
[0048] Still, referring to FIG. 3H, the MIM capacitor 200 is
manufactured by the method in accordance with the second
embodiment. The MIM capacitor 200 includes the first dielectric
layer 210, the first damascene electrode layer 220, the insulating
barrier layer 230, the second dielectric layer 240, the second
damascene electrode layer 250 and the dual damascene structure 260.
The first damascene electrode layer 220 is filled in the first
dielectric layer 210. The insulating barrier layer 230 is formed on
the first dielectric layer 210 and the first damascene electrode
layer 220. The second dielectric layer 240 is formed on the
insulating barrier layer 230. The second damascene electrode layer
250 is formed in the second dielectric layer 240, is located above
the first damascene electrode layer 220 and is contacted with the
insulating barrier layer 230. The dual damascene structure 260 is
formed in the second dielectric layer 240 and the insulating
barrier layer 230, is located above the first damascene electrode
layer 220 and is electrically connected to the first damascene
electrode layer 220.
[0049] In the present embodiment, the second damascene electrode
layer 250 and the dual damascene structure 260 are formed at the
same time by using a dual damascene process. Thus, it is not
necessary to deposit extra dielectric layers and metal layers,
thereby simplifying the MIM capacitor 200 with the interconnection
structure and reducing the production cost. Thus, the method can
reduce the production cost of the MIM capacitor and manufacture the
MIM capacitor 100 with a simple structure. Furthermore, the
insulating barrier layer 230 can further serve as an etch stop
layer and a capacitor dielectric layer between the first damascene
electrode layer 220 and the second damascene electrode layer 250.
In other words, in the method for manufacturing the MIM capacitor
200, it is not necessary to deposit extra dielectric layers between
the two electrode layers (i.e., the first damascene electrode layer
220 and the second damascene electrode layer 250).
[0050] According to the method for manufacturing the MIM capacitor
200, it is also noted that, the fabrication of the MIM capacitor
200 can be integrated with a fabrication of an interconnection
structure of an integrated circuit. FIGS. 4 illustrate a schematic
view of a MIM capacitor with an interconnection structure of an
integrated circuit. Referring to FIG. 4, in the present embodiment,
an interconnection structure 40, for example, a dual damascene
interconnection structure, is shown, which includes conductive wire
layers 41, 42 and contact plugs 43, 44 electrically connecting the
conductive layers 41, 42. To integrate the process, the
interconnection structure 40 is formed in the first dielectric
layer 210 and the second dielectric layer 240. The first conductive
wire layer 41 and the contact plug 43 can be formed in the process
of forming the second damascene electrode layer 250 and the dual
damascene structure 260, the second conductive wire layer 42 and
the contact plug 44 can be formed in the process of forming the
first damascene electrode layer 220. It is noted that, the
insulating barrier layer 230 may not formed in the region for
forming the interconnection structure 40.
[0051] In the MIM capacitor and the method for manufacturing the
MIM capacitor of the present invention, the first damascene
electrode layer and the second damascene electrode layer are both
formed by a damascene process and are separated by the insulating
barrier layer. The insulating barrier can serve as not only an
insulator of the MIM capacitor, but also an etch stop layer during
forming the second damascene electrode layer. Thus, the MIM
capacitor has a simple structure, thereby reducing the production
cost. In another embodiment, the MIM capacitor can further includes
the dual damascene structure formed in the second dielectric layer
and the insulating barrier layer and electrically connected to the
first damascene electrode layer. The dual damascene structure and
the second damascene electrode layer can be formed in a common
step. Thus, the process of integrating the MIM capacitor with an
interconnection structure can be simplified, thereby reducing the
production cost.
[0052] While the invention has been described in terms of what is
presently considered to be the most practical and preferred
embodiments, it is to be understood that the invention needs not be
limited to the disclosed embodiment. On the contrary, it is
intended to cover various modifications and similar arrangements
included within the spirit and scope of the appended claims which
are to be accorded with the broadest interpretation so as to
encompass all such modifications and similar structures.
* * * * *