U.S. patent application number 14/292388 was filed with the patent office on 2015-05-07 for broadband connection structure and method.
This patent application is currently assigned to National Chiao Tung University. The applicant listed for this patent is National Chiao Tung University. Invention is credited to Chien-Nan Kuo, Chun-Hsing Li.
Application Number | 20150123749 14/292388 |
Document ID | / |
Family ID | 53006615 |
Filed Date | 2015-05-07 |
United States Patent
Application |
20150123749 |
Kind Code |
A1 |
Li; Chun-Hsing ; et
al. |
May 7, 2015 |
BROADBAND CONNECTION STRUCTURE AND METHOD
Abstract
A broadband connection structure is disclosed. The broadband
connection structure includes a carrier and a chip. The carrier
includes a first resonator. The chip includes a second resonator
and configured on the carrier using a flip-chip method. The first
resonator is connected to the second resonator via a magnetic field
and an electric field existing therebetween to transmit a broadband
signal between the carrier and the chip. A broadband connection
method is also disclosed.
Inventors: |
Li; Chun-Hsing; (Hsinchu,
TW) ; Kuo; Chien-Nan; (Hsinchu, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
National Chiao Tung University |
Hsinchu |
|
TW |
|
|
Assignee: |
National Chiao Tung
University
Hsinchu
TW
|
Family ID: |
53006615 |
Appl. No.: |
14/292388 |
Filed: |
May 30, 2014 |
Current U.S.
Class: |
333/24R ;
333/219 |
Current CPC
Class: |
H04B 5/0075 20130101;
H04B 5/0031 20130101; H01L 24/00 20130101 |
Class at
Publication: |
333/24.R ;
333/219 |
International
Class: |
H01P 5/02 20060101
H01P005/02 |
Foreign Application Data
Date |
Code |
Application Number |
Nov 7, 2013 |
TW |
102140587 |
Claims
1. A broadband connection structure, comprising: a carrier
including a first resonator; and a chip including a second
resonator and configured on the carrier in a flip-chip method,
wherein the first resonator is connected to the second resonator
via a magnetic field and an electric field existing therebetween to
transmit a broadband signal between the carrier and the chip.
2. A broadband connection structure as claimed in claim 1, wherein:
the first resonator includes a first equivalent inductor, and the
carrier includes a first split-rectangular conducting wire
constituting the first equivalent inductor; the second resonator
includes a second equivalent inductor, and the chip further
includes a second split-rectangular conducting wire constituting
the second equivalent inductor; the first split-rectangular
conducting wire has two first terminals, and the second
split-rectangular conducting wire has two second terminals; and the
broadband signal is a differential signal.
3. A broadband connection structure as claimed in claim 2, wherein
the first equivalent inductor and the second equivalent inductor
couple the broadband signal via the magnetic field
therebetween.
4. A broadband connection structure as claimed in claim 2, wherein
the differential signal is input to the first terminals, coupled to
the second split-rectangular conducting wire via the magnetic field
and the electric field and output from the second terminals.
5. A broadband connection structure as claimed in claim 2, wherein
the differential signal is input to the second terminals, coupled
to the first split-rectangular conducting wire via the magnetic
field and the electric field and output from the first
terminals.
6. A broadband connection structure as claimed in claim 2, further
comprising: a virtual ground plane set between the first terminals
and between the second terminals, and each of the first and second
split-rectangular conducting wires is symmetric with respect to the
virtual ground plane so that the carrier and the chip have an
identical ground potential.
7. A broadband connection structure as claimed in claim 2, wherein
the first split-rectangular conducting wire has a length and a
width, the broadband connection structure has an operable
bandwidth, and one of the length and the width is less than
one-fifth of a wavelength to which a lowest frequency in the
operable bandwidth corresponds.
8. A broadband connection structure as claimed in claim 2, wherein:
the carrier further includes: a first substrate; and a first
insulating layer between the first substrate and the first
split-rectangular conducting wire; the chip further includes: a
second substrate; and a second insulating layer between the second
substrate and the second split-rectangular conducting wire; and the
first substrate and the second substrate are formed from one of an
identical material and different materials.
9. A broadband connection structure as claimed in claim 8, wherein:
the first resonator further includes a first equivalent capacitor
formed from the first split-rectangular conducting wire, the first
insulating layer and the first substrate; and the second resonator
further includes a second equivalent capacitor formed from the
second split-rectangular conducting wire, the second insulating
layer and the second substrate constitute.
10. A broadband connection structure as claimed in claim 2,
wherein: the first split-rectangular conducting wire has a first
parasitic capacitance; the second split-rectangular conducting wire
has a second parasitic capacitance; the first resonator further
includes a first equivalent capacitor formed from the first
parasitic capacitance; and the second resonator further includes a
second equivalent capacitor formed from the second parasitic
capacitance.
11. A broadband connection structure as claimed in claim 2, further
comprising: a gap between the carrier and the chip; and an
equivalent coupling capacitor formed from the first
split-rectangular conducting wire, the second split-rectangular
conducting wire and the gap, and coupling the broadband signal via
the electric field.
12. A broadband connection structure, comprising: a first chip
including a first resonator; and a second chip including a second
resonator and placed on the first chip by a flip-chip method,
wherein the first resonator is coupled to the second resonator by a
magnetic field and an electric field existing therebetween to
transmit a broadband signal between the first chip and the second
chip.
13. A broadband connection structure as claimed in claim 12,
wherein: the first resonator includes a first equivalent inductor
and a first equivalent capacitor; the first chip further includes a
first transmission line, and the first transmission line includes:
a first conducting wire acting as the first equivalent inductor, a
first substrate, and a first dielectric layer; and the first chip
has a first parasitic capacitance formed from the first conducting
wire, the first dielectric layer and the first substrate and acting
as the first equivalent capacitor.
14. A broadband connection structure as claimed in claim 13,
wherein: the second resonator includes a second equivalent inductor
and a second equivalent capacitor; the second chip further includes
a second transmission line, and the second transmission line
includes: a second conducting wire acting as the second equivalent
inductor, a second substrate, and a second dielectric layer; and
the second chip has a second parasitic capacitance formed from the
second conducting wire, the second dielectric layer and the second
substrate and acting as the second equivalent capacitor.
15. A broadband connection structure as claimed in claim 14,
further comprising: a gap between the first and the second chips;
and an equivalent coupling capacitor formed from the first
conducting wire, the gap and the second conducting wire and
coupling the broadband signal via the electric field.
16. A broadband connection structure as claimed in claim 12,
wherein: the first resonator having a first quality factor
parameter is coupled to the second resonator having a second
quality factor parameter to form a resonant coupling network; the
resonant coupling network has an M-like signal gain band including
a bandwidth and a signal gain flatness; the first resonator and the
second resonator have a mutual inductance therebetween and a
coupling capacitance; and the bandwidth is a function of the mutual
inductance and the coupling capacitance, the signal gain flatness
is a function of one of the first quality factor parameter and the
second quality factor parameter.
17. A broadband connection method, comprising steps of: configuring
a first resonator on a carrier and a second resonator on a chip;
and forming a resonant coupling network by a magnetic coupling and
an electric coupling between the first resonator and the second
resonator to transmit a broadband signal between the carrier and
the chip.
18. A method as claimed in claim 17, further comprising steps of:
providing a first split-rectangular conducting wire on the carrier
to act as a first equivalent inductor, and providing a second
split-rectangular conducting wire on the chip to act as a second
equivalent inductor; placing the chip on the carrier by a flip-chip
method; and forming the magnetic coupling by using the first
equivalent inductor and the second equivalent inductor.
19. A method as claimed in claim 17, further comprising steps of:
configuring a first conducting layer in the first resonator;
configuring a second conducting layer in the second resonator; and
coupling the first conducting layer and the second conducting layer
to form an electric field.
20. A method as claimed in claim 17, wherein the first resonator
has a first magnetic field, and the second resonator has a second
magnetic field, the method further comprising a step of: coupling
the first magnetic field and the second magnetic field.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] The application claims the benefit of Taiwan Patent
Application No. 102140587, filed on Nov. 7, 2013, at the Taiwan
Intellectual Property Office, the disclosure of which is
incorporated herein in its entirety by reference.
FIELD OF THE INVENTION
[0002] The present disclosure relates to a broadband connection
structure, specifically to a broadband connection structure for
connecting a chip and a carrier or a chip and another chip.
BACKGROUND OF THE INVENTION
[0003] Wire bonding is a conventional method of making connections
between a chip and a carrier or a chip and another chip. However, a
relatively high inductance of wire bonds will lead to bandwidth
limitations for the signal transmissions. Therefore, wire bonding
is commonly used in a structure that transmits low-frequency
signals.
[0004] Please refer to FIG. 1, which is a schematic diagram showing
a connection structure 10 in the prior art. The connection
structure 10 includes chips 104 and 106 and material 108, wherein
the chip 104 is electrically connected to the chip 106 using a
ribbon structure 102. However, in this connection mode, the two
chips must be at the same height and thus the additional material
108 is usually added under the thinner chip 106 in an additional
step during the manufacturing process, which causes increased cost.
Although the inductance of the ribbon structure 102 is lower than
that of the wire bonds, for transmissions of high-frequency and
broadband signals, the operable frequency range is still limited
(e.g. less than 100 GHz) due to the high inductance of the ribbon
structure 102.
[0005] Please refer to FIG. 2, which is a schematic diagram showing
a connection structure 20 in the prior art. The connection
structure 20 includes a carrier 204, a chip 202 stacked on the
carrier 204 using a flip-chip method, and a connecting unit 206,
e.g. a bumper, configured on a connecting face 208 of the chip 202.
The connecting unit 206 is capable of connecting the chip 202 and
the carrier 204 after being heated and pressed, and via which
signals between the chip 202 and the carrier 204 can be
transmitted. When the connecting unit 206 is a bumper, the large
size thereof will cause a severe parasitic effect, and thus the
operable bandwidth of signal transmissions between the chip 202 and
the carrier 204 is limited.
[0006] Please refer to FIG. 3, which is a schematic diagram showing
a connection structure 30 in the prior art. In the connection
structure 30, the chip and the carrier share the same substrate.
The connection structure 30 includes connecting pads 301 and 302,
conducting wires 303 and 304, equivalent loads 305 and 306, and
wire bonds 307 and 308 connecting the connecting pad 301 to the
connecting pad 302. Typically, the connecting pads 301 and 302 have
a width of 200 .mu.m, the conducting wires 303 and 304 have a
length of 190 .mu.m and a width of 100 .mu.m, the wire bonds 307
and 308 have a width of 25 .mu.m and a length of 32 .mu.m, and the
distance between the connecting pads 301 and 302 is about 225
.mu.m. The equivalent loads 305 and 306 are preferably 50 ohm. In
the connection structure 30, the conducting wires 303 and 304 are
used as equivalent inductors, and the connecting pads 301 and 302
are used as equivalent capacitors. The microwave circuit 3012
includes the equivalent load 305, the conducting wire 303 and the
connecting pad 301. The microwave circuit 3013 includes the
equivalent load 306, the conducting wire 304 and the connecting pad
302. The connection structure 30 can realize a low-pass filter of
orders 1 through 5 and transmit signals between two microwave
circuits 3012 and 3013 via the wire bonds 307 and 308.
[0007] Unfortunately, such connection structure 30 has a large area
and high cost, so it can be applied to neither signal transmission
between two separate chips, nor that between an independent chip
and an independent carrier. Furthermore, the connection structure
30 has the parasitic effect due to the difference between the
ground potentials of the microwave circuit 3012 and 3013, and thus
the bandwidth for signal transmissions is limited.
[0008] Please refer to FIG. 4, which is a schematic diagram showing
a package structure 40 for transmitting signals in the THz
frequency band in the prior art. The package structure 40 includes
a chip 401 and a waveguide 403. The chip 401 includes a chip body
4010 and a dipole antenna 402. In the package structure 40, signals
from the chip body 4010 can be radiated to the waveguide 403 via
the dipole antenna 402. The waveguide 403 can be further connected
to other chips or carriers to transmit signals in the THz frequency
band. Although the package structure 40 has a less insertion loss,
the dipole antenna 402 on the chip body 4010 usually occupies a
large area and thus causes an increase in cost. Due to the large
volume of the waveguide 403, which typically has a length L1 of
about 1000 .mu.m, a width W1 of about 600 .mu.m and a height H1 of
about 600 .mu.m, the package structure 40 cannot be used to realize
the miniaturized terahertz signal transmission system, and cannot
be placed in handheld electronic products.
[0009] Please refer to FIG. 5, which is a schematic diagram of a
transmission device 50 in the prior art. The transmission device 50
includes chips 501, 502 and 503 and spacer layers 504 and 505. The
spacer layer 504 is located between chips 501 and 502, and the
spacer layer 505 is located between chips 502 and 503. The chip 501
includes a transmitting circuit 5011, a receiving circuit 5012, a
transmitting coil 5013 and a receiving coil 5014 on the top surface
thereof as indicated in FIG. 5. Similarly, the chip 502 includes a
transmitting circuit 5021, a receiving circuit 5022, a transmitting
coil 5023 and a receiving coil 5024, and the chip 503 includes a
transmitting circuit 5031, a receiving circuit 5032, a transmitting
coil 5033 and a receiving coil 5034.
[0010] In FIG. 5, the transmitting coil 5013 and the receiving coil
5024 can convey digital signals via inductive coupling, and the
digital signals are decoded in the receiving circuit 5022. However,
the high attenuation of the transmission device 50 in the intensity
of the transmitted digital signals is unsuitable for applications
using connection structures, and due to a relatively narrow range
of data transmission bandwidth, signal transmissions in the THz
frequency band or millimetric wave band cannot be achieved. Because
of the high signal attenuation, the amplitude of the signals output
by the transmitting circuit must be large enough to allow the
receiving circuit to demodulate the digital signals correctly.
Based on this aspect, the transmission device 50 uses both the
transmitting circuit and the receiving circuit to effectively
convey signals, but this has the disadvantages of high cost and
high power consumption. Furthermore, the transmission device 50 has
another disadvantage, the need of thinning the chips 501, 502 and
503, and thus an additional process is required. Based on the
above, the high-cost transmission device 50 is not a good choice
for transmissions between a chip and a carrier or between
chips.
[0011] Please refer to FIG. 6, which is a schematic diagram showing
a near field communication (NFC) system 60 in the prior art. The
system 60 includes resonators 601 and 602, wherein the resonator
601 includes a ring conductor 6011 and an equivalent capacitor
6012, and the resonator 602 includes a ring conductor 6021 and an
equivalent capacitor 6022. The resonators 601 and 602 are separated
by a distance D, which is generally at least larger than thousands
of .mu.m. Because the NFC system 60 transmits power using a near
field method, the resonators 601 and 602 are required to have large
quality factors, e.g. over 100, but it is hard to generate a high
quality factor for the transmissions between a chip and a carrier
or between chips. In addition, the NFC system 60 has a narrow
operable bandwidth (tens of MHz) and a bulky size. Therefore, the
NFC system 60 is not a good choice for transmissions between a chip
and a carrier or between chips.
[0012] To overcome the problems mentioned above, a novel broadband
connection structure and method are disclosed in the present
disclosure after a lot of research, analysis and experiments by the
inventors.
SUMMARY OF THE INVENTION
[0013] In accordance with one aspect of the present disclosure, a
broadband connection structure is disclosed. The broadband
connection structure comprises a carrier and a chip. The carrier
includes a first resonator, and the chip includes a second
resonator and is configured on the carrier using a flip-chip
method. The first resonator is connected to the second resonator
via a magnetic field and an electric field existing therebetween to
transmit a broadband signal between the carrier and the chip.
[0014] In accordance with another aspect of the present disclosure,
a broadband connection structure is disclosed. The broadband
connection structure includes a first chip including a first
resonator and a second chip including a second resonator and placed
on the first chip using a flip-chip method. The first resonator is
coupled to the second resonator via a magnetic field and an
electric field existing therebetween to transmit a broadband signal
between the first chip and the second chip.
[0015] In accordance with a further aspect of the present
disclosure, a broadband connection method is disclosed. The method
includes steps of configuring a first resonator on a carrier and a
second resonator on a chip, and forming a resonant coupling network
via a magnetic coupling and an electric coupling between the first
resonator and the second resonator to transmit a broadband signal
between the carrier and the chip.
[0016] The above objectives and advantages of the present
disclosure will become more readily apparent to those ordinarily
skilled in the art after reviewing the following detailed
descriptions and accompanying drawings, in which:
BRIEF DESCRIPTION OF THE DRAWINGS
[0017] FIG. 1 is a schematic diagram showing a connection structure
in the prior art.
[0018] FIG. 2 is a schematic diagram showing another connection
structure in the prior art.
[0019] FIG. 3 is a schematic diagram showing another connection
structure in the prior art.
[0020] FIG. 4 is a schematic diagram showing a package structure
for transmitting signals in the THz frequency band in the prior
art.
[0021] FIG. 5 is a schematic diagram of a transmission device in
the prior art.
[0022] FIG. 6 is a schematic diagram showing a near field
communication (NFC) system in the prior art.
[0023] FIG. 7(a) is a schematic diagram showing a connection
structure for a chip and a carrier according to a first preferred
embodiment of the present disclosure.
[0024] FIG. 7(b) is a schematic diagram showing a broadband
connection structure according to the first preferred embodiment of
the present disclosure.
[0025] FIG. 7(c) is a schematic diagram showing an equivalent
circuit of the broadband connection structure according to the
first preferred embodiment of the present disclosure.
[0026] FIG. 8(a) is a schematic diagram showing a broadband
connection structure according to the first preferred embodiment of
the present disclosure.
[0027] FIG. 8(b) is a cross-sectional diagram showing a broadband
connection structure according to the first preferred embodiment of
the present disclosure.
[0028] FIG. 8(c) is a schematic diagram showing a virtual ground
plane of the broadband connection structure in FIG. 8(a).
[0029] FIG. 9 is a schematic diagram showing scattering-parameters
of a resonant coupling network of the first preferred embodiment of
the present disclosure.
[0030] FIG. 10(a) is a schematic diagram showing the gain band of
the resonant coupling network of the present disclosure.
[0031] FIG. 10(b) is a schematic diagram showing relationships
between signal gain flatness Rflat1 and parameter Q.sub.LOADS.
[0032] FIG. 10(c) is a schematic diagram showing relationships
between bandwidth and parameter k.
[0033] FIG. 10(d) is a schematic diagram showing relationships
among Rflat1, parameter k and parameter Q.sub.LOADS or parameter
Q.sub.LOADP.
[0034] FIG. 11(a) is a schematic diagram showing a broadband
connection structure according to a second preferred embodiment of
the present disclosure.
[0035] FIG. 11(b) is a sectional drawing of the broadband
connection structure in FIG. 11(a) with the flip-chip stack of
chips.
[0036] FIG. 12 is a schematic diagram showing a method for
transmitting a broadband signal according to the present
disclosure.
[0037] FIG. 13 is a schematic diagram showing a broadband
connection method according to the present disclosure.
[0038] FIG. 14(a) is a schematic diagram showing magnetic field
coupling of a third preferred embodiment of the present
disclosure.
[0039] FIG. 14(b) is a schematic diagram showing electric field
coupling of a third preferred embodiment of the present
disclosure.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[0040] The present disclosure will now be described more
specifically with reference to the following embodiments. It is to
be noted that the following descriptions of preferred embodiments
in this disclosure are presented herein for the purposes of
illustration and description only; it is not intended to be
exhaustive or to be limited to the precise form disclosed.
[0041] Please refer to FIG. 7(a), which is a schematic diagram
showing a connection structure 72 for a chip and a carrier
according to a first preferred embodiment of the present
disclosure. The connection structure 72 includes a carrier 701 and
a chip 702. The carrier 701 includes a first resonator 7011, and
the chip 702 includes a second resonator 7021. The chip 702 is
stacked on the carrier 701 using a flip-chip method to form a
broadband connection structure 70, as shown in FIG. 7(b). A
broadband signal Sig1_In is input into the second resonator 7021,
and then a broadband signal Sig1_Out is output from the first
resonator 7011. Preferably, the broadband signals Sig1_In and
Sig1_Out are differential signals.
[0042] Please refer to FIG. 7(b), which is a schematic diagram
showing a broadband connection structure 70 according to the first
preferred embodiment of the present disclosure. The chip 702 may be
fixed to the carrier 701 by a connecting pad (not shown) on the
carrier 701 and a solder ball on the chip 702. After the chip 702
is flipped and fixed on the carrier 701, the second resonator 7021
and the first resonator 7011 form a resonant coupling network 703.
The transmissions of the broadband signals Sig1_In and Sig1_Out are
achieved by using magnetic field coupling of equivalent inductors,
electric field coupling of equivalent capacitors and the resonant
coupling network 703, which will be detailed hereafter.
[0043] Please refer to FIG. 7(c), which is a schematic diagram
showing an equivalent circuit of the broadband connection structure
70 in FIG. 7(b) according to the first preferred embodiment of the
present disclosure. The chip 702 includes a load Z.sub.P, an
equivalent inductor L.sub.P and an equivalent capacitor C.sub.P.
The carrier 701 includes a load Z.sub.S, an equivalent inductor
L.sub.S and an equivalent capacitor C.sub.S. The second resonator
7021 includes the equivalent inductor L.sub.P and the equivalent
capacitor C.sub.P, and the first resonator 7011 includes the
equivalent inductor L.sub.S and the equivalent capacitor C.sub.S.
When the chip 702 is configured on the carrier 701 using a
flip-chip method, the first resonator 7011 and the second resonator
7021 are separated by a gap to form an equivalent capacitor C.sub.C
in FIG. 7(c). The equivalent capacitor C.sub.C uses an electric
field formed between the chip 702 and the carrier 701 to couple the
broadband signals Sig1_In and Sig1_Out. The equivalent inductors
L.sub.P and L.sub.S use a magnetic field formed between the chip
702 and the carrier 701 to couple the broadband signals Sig1_In and
Sig1_Out.
[0044] Please refer to FIGS. 8(a) and 8(b), which are respectively
a schematic diagram and a cross-sectional diagram showing a
broadband connection structure 74 according to the first preferred
embodiment of the present disclosure. The broadband connection
structure 70 in FIG. 7(b) can be realized by the broadband
connection structure 74 in FIG. 8(a). In FIGS. 8(a) and 8(b), the
broadband connection structure 74 includes a carrier 701 and a chip
702 configured on the carrier 701 using a flip-chip method. The
carrier 701 includes a first resonator 7011, and the chip 702
includes a second resonator 7021. The first resonator 7011 includes
a first split-rectangular conducting wire 741, which has a width
W.sub.M1 and a length L.sub.M1. The second resonator 7021 includes
a second split-rectangular conducting wire 742, which has a width
W.sub.M2 and a length L.sub.M2. The first split-rectangular
conducting wire 741 and the second split-rectangular conducting
wire 742 are concentric, split and referred to as "split rings"
despite their rectangular shape. Specifically, although the first
split-rectangular conducting wire 741 and the second
split-rectangular conducting wire 742 are shaped like rectangles,
they are not limited to that shape. There is a magnetic field and
an electric field between the first resonator 7011 and the second
resonator 7021, through which the first resonator 7011 is coupled
to the second resonator 7021 to form the resonant coupling network
703 to transmit the broadband signal Sig1_In or Sig1_Out between
the carrier 701 and the chip 702. The carrier 701 and the chip 702
are separated by a gap denoted as "Gap1" in FIG. 8(a). The distance
of Gap1 (D.sub.GAP1) is small enough to generate the magnetic field
coupling and the electric field coupling between the chip 702 and
the carrier 701. Preferably, the distance D.sub.GAP1 is about
several .mu.m to about tens .mu.m.
[0045] In FIG. 8(a), the broadband signal Sig1_In is an alternating
current (AC) signal, which may be composed of differential signals
Sig1_In+ and Sig1_In-. The width W.sub.M1 or the length L.sub.M1 is
preferably equal to or smaller than 1/5 of a wavelength .lamda.1 to
which a lowest frequency in the operable bandwidth corresponds. For
example, the value of the width W.sub.M1 or the length L.sub.M1 is
in a range of 1/5 to 1/10 of the wavelength .lamda.1. Therefore,
the size of either the first split-rectangular conducting wire 741
or the second split-rectangular conducting wire 742 is quite small,
which will facilitate chip packaging for mobile devices. The common
length of wire antennas transmitting signals via electromagnetic
waves is equal to 1/2 or 1/4 of the wavelength for the signal
transmission to obtain optimal impedance matching. In the present
disclosure, signals are transmitted by the magnetic field coupling
and the electric field coupling, and the width W.sub.M1 or the
length L.sub.M1 of the wire can be smaller than 1/5 of the
wavelength of the signal transmission or even less. In this aspect,
the package structure for the chip 702 is minimized because no
large-sized antenna is integrated in the chip 702. The first
split-rectangular conducting wire 741 and the second
split-rectangular conducting wire 742 may have other shapes, e.g.
circular, elliptical or polygonal shapes. Preferably, they have the
same and symmetric shape, which will be conducive for the chip 702
and the carrier 701 to have the same virtual ground potential.
Similarly, the broadband signal Sig1_Out is an AC signal and may be
composed of differential signals Sig1_Out+ and Sig1_Out-. The
differential signals Sig1_In+ and Sig1_In- are input from Port2 and
pass through the resonant coupling network 703, and afterward, the
differential signals Sig1_Out+ and Sig1_Out- are output from
Port1.
[0046] In FIG. 8(b), the chip 702 includes a substrate 7022, a
dielectric layer 7023, a conducting layer 7025 and a passivation
layer 7024. Preferably, the conducting layer 7025 is a metal layer,
which is usually a top metal layer in the semiconductor fabrication
process. The passivation layer 7024 is used to prevent the surface
of the conducting layer 7025 from a chemical reaction, which may
corrode the chip 702. Similarly, the carrier 701 includes a
substrate 7012, a dielectric layer 7013, a conducting layer 7015
and a passivation layer 7014. Preferably, the conducting layer 7015
is a metal layer. The passivation layer 7014 is used to prevent the
carrier 701 from corrosion caused by a chemical reaction on the
surfaces of the conducting layer 7015. The metal layer 7025
includes the second split-rectangular conducting wire 742 forming
the equivalent inductor L.sub.P The metal layer 7015 includes the
first split-rectangular conducting wire 741 forming the equivalent
inductor L.sub.S. The equivalent inductor L.sub.P and the
equivalent inductor L.sub.S couple the broadband signals Sig1_In
and Sig1_Out via the magnetic field existing therebetween. The
dielectric layers 7013 and 7023 include grounding pads 705 and 706
electrically connected to the end of the ground potential.
[0047] Please refer to FIGS. 8(a) and 8(b). The second
split-rectangular conducting wire 742, the insulating layer 7023
and the substrate 7022 form the equivalent capacitor C.sub.P.
Alternatively, the chip 702 can use the parasitic capacitance of
the second split-rectangular conducting wire 742 to form the
equivalent capacitor C.sub.P. Similarly, the first
split-rectangular conducting wire 741, the insulating layer 7013
and the substrate 7012 form the equivalent capacitor C.sub.S.
Alternatively, the equivalent capacitor C.sub.S can be formed from
the parasitic capacitance of the first split-rectangular conducting
wire 741. The equivalent inductor L.sub.S and the equivalent
capacitor C.sub.S are included in the first resonator 7011, and the
equivalent inductor L.sub.P and the equivalent capacitor C.sub.P
are included in the second resonator 7021. The first
split-rectangular conducting wire 741, the Gap1 and the second
split-rectangular conducting wire 742 constitute the equivalent
capacitor C.sub.C to couple the broadband signals Sig1_In and
Sig1_Out via the electric field.
[0048] In FIG. 8(a), the first split-rectangular conducting wire
741 has a symmetric shape and a symmetric conducting structure 743,
and the second split-rectangular conducting wire 742 has a
symmetric shape and a symmetric conducting structure 744 as well.
The differential signals Sig1_In+ and Sig1_In- are input to the
symmetric conducting structure 744 and coupled to the symmetric
conducting structure 743 via the magnetic field and the electric
field, and finally the differential signals Sig1_Out+ and Sig1_Out-
are output from the symmetric conducting structure 743.
Alternatively, the differential signals Sig1_In+ and Sig1_In- can
be input to the symmetric conducting structure 743 and coupled to
the symmetric conducting structure 744 via the magnetic field and
the electric field, and finally the differential signals Sig1_Out+
and Sig1_Out- are output from the symmetric conducting structure
744. The equivalent inductances VLP and VLS of the equivalent
inductors L.sub.P and L.sub.S and the equivalent capacitance VC of
the equivalent capacitor C.sub.C can be adjusted to allow the
operable bandwidth of this structure to cover the desired frequency
band, such as the millimetric wave band or the THz frequency band.
The equivalent inductance VLS can be adjusted by changing the width
W.sub.M1 and the length L.sub.M1 of the first split-rectangular
conducting wire 741, and the equivalent inductance VLP can be
adjusted by changing the width W.sub.M2 and the length L.sub.M2 of
the second split-rectangular conducting wire 742. The equivalent
capacitance VC can be adjusted by changing the thickness T.sub.M1
of the first split-rectangular conducting wire 741 and the
thickness T.sub.M2 of the second split-rectangular conducting wire
742. The thickness T.sub.M1 and the thickness T.sub.M2 are
associated with areas of two plates constituting the equivalent
capacitor C.sub.C. One skilled in the art knows that the
capacitance of parallel plate capacitors is given by C=.di-elect
cons..times.A/d, where .di-elect cons. is permittivity of the
dielectric between two parallel plates, A is the area of the
plates, and d is the separation distance between the two parallel
plates. Therefore, the equivalent capacitance VC of the equivalent
capacitor C.sub.C can be adjusted using the variables mentioned in
the above equation. Because the broadband connection structure 74
does not realize a substantial connection to transmit the broadband
signals Sig1_In and Sig1_Out, the chip 702 and the carrier 701 in
FIG. 8(b) can be made of the same or different materials and do not
need to share an identical substrate. That is, the substrate 7012
and the substrate 7022 in FIG. 8(b) may be made of the same or
different materials, which increases flexibility in the fabrication
process.
[0049] Please refer to FIG. 8(c), which is a schematic diagram
showing a virtual ground plane 745 of the broadband connection
structure 74. The first split-rectangular conducting wire 741
includes a first symmetric portion 747, and the second
split-rectangular conducting wire 742 includes a second symmetric
portion 748. The virtual ground plane 745 is perpendicular to the
first split-rectangular conducting wire 741 and the second
split-rectangular conducting wire 742. Each of the first symmetric
portion 747 and the second symmetric portion 748 is symmetric with
respect to the virtual ground plane 745 so that the carrier 701 and
the chip 702 have an identical ground potential, which can prevent
any parasitic effect generated between the carrier 701 and the chip
702. Also, each of the symmetric conducting structures 743 and 744
is axially symmetric with respect to an axis 746 included in the
virtual ground plane 745. The first split-rectangular conducting
wire 741 and the second split-rectangular conducting wire 742 are
concentrically stacked and the stacked structure is symmetric with
respect to an axis 749. When the signal Sig1_In+ of the
differential signals Sig1_In+ and Sig1_In- has a voltage of V1_In+,
and the other signal Sig1_In- in the differential signals has a
voltage of V1_In-, the ground potential formed on the virtual
ground plane 745 is equal to V1_In+-V1_In-. Similarly, when the
signal Sig1_Out+ in the differential signals Sig1_Out+ and
Sig1_Out- has a voltage of V1_Out+, and the signal Sig1_Out- has a
voltage of V1_Out-, the ground potential formed on the virtual
ground plane 745 is equal to V1_Out+-V1_Out-. The voltages at turns
7441 and 7442 of the symmetric conducting structure 744 are
respectively V2_In+ and V2_In-, which are different from the
voltages V1_In+ and V1_In- due to the inductive effect. Because of
the small Gap1 (as shown in FIG. 8(a)), the voltages at the turns
7441 and 7442 have a tiny difference, which is small enough to be
ignored, from those of portions of the first split-rectangular
conducting wire 741 directly below the turns 7441 and 7442.
Therefore, for the second split-rectangular conducting wire 741 and
the first split-rectangular conducting wire 742, the voltage on the
virtual ground plane 745 near the turns 7441 and 7442 and that on
the virtual ground plane 745 near the portions of the first
split-rectangular conducting wire 741 directly below the turns 7441
and 7442 can be considered an identical ground potential.
[0050] Please refer to FIG. 9, which is a schematic diagram showing
scattering-parameters of the resonant coupling network 703 of the
first preferred embodiment of the present disclosure. In this case,
the defined bandwidth is in a range of 150 GHz to 250 GHz, while
other operation frequency ranges can be realized as well by similar
methods described in this disclosure. In FIG. 9, the horizontal
axis shows the operation frequency in unit of GHz of the broadband
signals Sig1_In and Sig1_Out. The vertical axis represents a return
loss or gain of parameters S11, S22, S21 and S12 in unit of GHz,
which are respectively denoted by rectangles, triangles, diamonds
and circles. The parameters S11, S22, S21 and S12 respectively
represent forward return loss, reverse return loss, forward gain
and reverse gain of the resonant coupling network 703.
[0051] In FIG. 9, the parameter S11 is smaller than -25 dB in the
frequency band BW1 (about 150 GHz to 250 GHz), which means that
when the broadband signal Sig1_In is input from Port2 (as shown in
FIG. 8(b)), the forward return loss generated in the frequency band
BW1 is low. Namely, during the transmission of the broadband signal
Sig1_In in the frequency band BW1, the forward return loss is
small. The parameter S21 is larger than -1 dB in the frequency band
BW2 (about 140 GHz.about.260 GHz), which means that when the
broadband signal Sig1_In is input from Port2, the forward gain
generated in the frequency band BW2 is large. Namely, the energy
loss is less than 1 dB after the broadband signal Sig1_In is
transmitted from the chip 702 to the carrier 701, which is
particularly beneficial for the forward transmissions of the
broadband signals Sig1_In and Sig1_Out. Similarly, the parameter
S22 is smaller than -25 dB in the frequency band BW1, which means
that when the broadband signal Sig1_Out is input from Port1 (as
shown in FIG. 8(b), the reverse return loss in the frequency band
BW1 is low. Namely, during the transmission of the broadband signal
Sig1_Out in the frequency band BW1, the reverse return loss is
small. The parameter S12 is larger than -1 dB in the frequency band
BW2, which means that when the broadband signal Sig1_Out is input
from Port1, the reverse gain generated in the frequency band BW2 is
large. The energy loss less than 1 dB after the transmission of the
broadband signal Sig1_Out from the carrier 701 to the chip 702 is
particularly beneficial for the reverse transmissions of the
broadband signals Sig1_In and Sig1_Out. As shown in FIG. 9,
preferred transmission properties can be obtained in the
intersection region (about 150 GHz.about.250 GHz) of the frequency
bands BW1 and BW2. Based on the above, it can be seen that
bi-directional transmission of the broadband signals Sig1_In and
Sig1_Out between the chip 702 and the carrier 701 has good
transmission properties in the THz frequency band. One skilled in
the art will be aware that the first preferred embodiment of the
present disclosure used in the package of the chip 702 and the
carrier 701 can be applied to the package of chips as well.
[0052] Please refer to FIG. 10(a), which is a schematic diagram
showing the gain band of the resonant coupling network 703 of the
present invention. In FIG. 10(a), the horizontal axis shows the
operation frequency band of the resonant coupling network 703, and
the vertical axis shows the gain of the parameter S21, wherein
.omega..sub.L and .omega..sub.H are two frequencies at the gain
peaks, and .omega..sub.min represents the frequency with the
minimum gain between the two gain-peak frequencies .omega..sub.L
and .omega..sub.H. Based on FIG. 10(a) illustrating features of the
gain band of the forward gain, one skilled in the art will
appreciate the features of the gain bands of reverse gains. The
resonant coupling network 703 has a M-like signal gain band 704,
which includes two gain-peak frequencies .omega..sub.L and
.omega..sub.H, and a frequency .omega..sub.min between the two
gain-peak frequencies .omega..sub.L and .omega..sub.H with a gain
lower than that at .omega..sub.L or .omega..sub.H. The M-like
signal gain band 704 further includes a bandwidth BW3 and a signal
gain flatness Rflat1. The signal gain flatness Rflat1 is determined
by the gain difference between .omega..sub.min and .omega..sub.L
and the gain difference between .omega..sub.min and
.omega..sub.H.
[0053] Please refer to FIG. 7(c). The first resonator 7011 and the
second resonator 7021 have a mutual inductance M1 and a coupling
capacitance C.sub.C existing therebetween. The value of the mutual
inductance M1 is directly proportional to the length L.sub.M1 and
the width W.sub.M1 of the first split-rectangular conducting wire
741. Also, the value of the mutual inductance M1 is directly
proportional to the length L.sub.M2 and the width W.sub.M2 of the
second split-rectangular conducting wire 742. In addition, the
value of the coupling capacitance C.sub.C is directly proportional
to the thickness T.sub.M1 of the first split-rectangular conducting
wire 741 and the thickness T.sub.M2 of the second split-rectangular
conducting wire 742. In addition, the length L.sub.M1 and the width
W.sub.M1 of the first split-rectangular conducting wire 741 are
directly proportional to the value of the equivalent inductor
L.sub.S. Also, the length L.sub.M2 and the width W.sub.M2 of the
second split-rectangular conducting wire 742 are directly
proportional to the value of the equivalent inductor L.sub.P. In
addition, the thickness T.sub.M1 of the first split-rectangular
conducting wire 741 is directly proportional to the capacitance of
the equivalent capacitor C.sub.S, and the thickness T.sub.M2 of the
second split-rectangular conducting wire 742 is directly
proportional to the capacitance of the equivalent capacitor
C.sub.P. Please refer to FIGS. 7(c) and 10(a). The bandwidth BW3 is
associated with the mutual inductance M1 and the coupling
capacitance C.sub.C, and the signal gain flatness Rflat1 is
associated with a first quality factor parameter Q.sub.LOADS of the
first resonator 7011 or a second quality factor parameter
Q.sub.LOADP of the second resonator 7021, where the parameter
Q.sub.LOADS=the capacitance of the equivalent capacitor
C.sub.S.times..omega..sub.0.times.the impedance of the load
Z.sub.S, the parameter Q.sub.LOADP=the capacitance of the
equivalent capacitor C.sub.P.times..omega..sub.0.times.the load
Z.sub.P, Q.sub.LOADS=Q.sub.LOADP, and W.sub.0=1/((the inductance of
the equivalent inductor L.sub.P.times.the capacitance of the
equivalent capacitor C.sub.P).times.(1-k.sup.2)).sup.1/2 or
.omega..sub.0=1/((the inductance of the equivalent inductor
L.sub.S.times.the capacitance of the equivalent capacitor
C.sub.S).times.(1-k.sup.2)).sup.1/2. The parameter k is a function
of the mutual inductance M1 and the coupling capacitance C.sub.C.
Specifically, the parameter k is directly proportional to either
the coupling capacitance C.sub.C or the mutual inductance M1. Based
on the above, the mutual inductance M1 can be adjusted by adjusting
the widths W.sub.M1 and W.sub.M2 or the lengths L.sub.M1 and
L.sub.M2, and the coupling capacitance C.sub.C can be adjusted by
adjusting the thickness T.sub.M1 of the first split-rectangular
conducting wire 741 and the thickness T.sub.M2 of the second
split-rectangular conducting wire 742.
[0054] Please refer to FIG. 10(b), which is a schematic diagram
showing relationship between signal gain flatness Rflat1 and
parameter Q.sub.LOADS. The horizontal axis shows the normalized
operation frequency band of the resonant coupling network 703. The
vertical axis represents the normalized gain of the parameter S21.
.omega..sub.min denotes the frequency with a minimum gain between
the two gain-peak frequencies .omega..sub.L and .omega..sub.H. As
shown in FIG. 10(b), the larger the parameter Q.sub.LOADS is, the
larger will be the slope of the curve between the two gain-peak
frequencies .omega..sub.L and .omega..sub.H, which represents that
the signal gain flatness Rflat1 is not flat. A flat gain with a
small gain variation is desired, and thus in FIG. 10(b), the
parameter Q.sub.LOADS is preferred to be 4.
[0055] Please refer to FIG. 10(c), which is a schematic diagram
showing relationship between bandwidth and parameter k. The
frequencies .omega..sub.min1, .omega..sub.min2 and .omega..sub.min3
respectively represent the frequencies with the minimum gains
between two gain-peak frequencies .omega..sub.L1 and W.sub.H1,
.omega..sub.L2 and .omega..sub.H2, and .omega..sub.L3 and
.omega..sub.H3. The bandwidths between two gain-peak frequencies
.omega..sub.L1 and .omega..sub.H1, .omega..sub.L2 and
.omega..sub.H2, and .omega..sub.L3 and .omega..sub.H3 are BW3, BW4
and BW5, respectively. With the increase of the parameter k from
0.3 to 0.5 to 0.7, the bandwidth is increased from BW4 to BW3 to
BW5. The value of the parameter k can be increased by increasing
the width WM1, the length L.sub.M1 or the thickness T.sub.M1 of the
first split-rectangular conducting wire 741 or the width W.sub.M2,
the length L.sub.M2 or the thickness T.sub.M2 of the second
split-rectangular conducting wire 742. However, it is preferred
that the first and the second split-rectangular conducting wires
have symmetric shapes to have a better effect of a common virtual
ground. In order to have a wide range of bandwidth and a better
gain property, the flatness of signals between .omega..sub.L,
.omega..sub.H should be stabilized. By using the adjustment manner
above, the bandwidth and gain properties of the broadband signals
Sig1_In and Sig1_Out can be optimized.
[0056] Specifically, in order to achieve good gain flatness of the
M-like signals, while also maintaining a wide operation frequency
band, the length L.sub.M1 and the width W.sub.M1 of the first
split-rectangular conducting wire 741 and the length L.sub.M2 and
the width W.sub.M2 of the second split-rectangular conducting wire
742 can be increased to increase the mutual inductance M1, and the
coupling capacitance C.sub.C can be increased by increasing the
thickness T.sub.M1 of the first split-rectangular conducting wire
741 and the thickness T.sub.M2 of the second split-rectangular
conducting wire 742. The increase in the mutual inductance M1 and
the coupling capacitance C.sub.C will cause an increase in the
value of the parameter k, but will also cause an increase in the
parameter Q.sub.LOADS or Q.sub.LOADS, which will lead to the
degradation of the signal gain flatness Rflat1. Therefore, the
parameters k, Q.sub.LOADS and Q.sub.LOADS should be adjusted
properly to obtain the optimal effect.
[0057] Please refer to FIG. 10(d), which is a schematic diagram
showing the relationship among Rflat1, parameter k and parameter
Q.sub.LOADS or parameter Q.sub.LOADP. The horizontal axis shows the
parameter k, and the vertical axis represents either the parameter
Q.sub.LOADS or parameter Q.sub.LOADP. The parameter Rflat1 is a
parameter that represents the signal gain flatness, i.e. the gain
variation. Therefore, the parameter Rflat1 with a small value
indicates a small variation in gain and thus a flat gain. Based on
FIG. 10(d), it can be seen that the parameter k is inversely
proportional to either the parameter Q.sub.LOADS or the parameter
Q.sub.LOADP.
[0058] When the broadband signals Sig1_In and Sig1_Out are in the
frequency of hundreds of Gigahertz, the capacitor will have poor
capacitance and even minor inductance. That is, such a capacitor
has a low ratio of stored energy to consumed energy. In this case,
an increase in the number of parallel capacitors is unlikely to
generate better resonance characteristics. Therefore, the use of
the parasitic capacitance inherent in the inductor itself as the
capacitor connected to the inductor in the resonator can not only
simplify the resonator structure, but is also favourable to the
improvement of the resonance characteristic.
[0059] Please refer to FIG. 11(a), which is a schematic diagram
showing a broadband connection structure 80 according to a second
preferred embodiment of the present disclosure. The broadband
connection structure 80 includes a chip 801 and a chip 802, wherein
the chip 802 is stacked on the chip 801 using a flip-chip method.
The chip 801 includes a resonator 803, and the chip 802 includes a
resonator 804, wherein there are a magnetic field and an electric
field existing between the resonator 803 and the resonator 804.
Coupling between the resonator 803 and the resonator 804 can be
realized by the magnetic field coupling and the electric field
coupling so as to transmit a broadband signal Sig2_In or Sig2_Out
between the chip 801 and the chip 802. The broadband signal Sig2_In
is an AC signal and composed of differential signals Sig2_In+ and
Sig2_In-.
[0060] Please refer to FIG. 11(b), which is a sectional drawing of
the broadband connection structure 80 in FIG. 11(a) with the
flip-chip stack of chips. In the second preferred embodiment of the
present disclosure, the broadband connection structure 80 is used
to package the chip 801 and the chip 802. One skilled in the art
will appreciate that the broadband connection structure 80 can be
used to package a chip and a carrier as well. The broadband
connection structure 80 has an equivalent circuit similar to that
shown in FIG. 7(7). Please refer to FIGS. 11(a), 11(b) and 7(c).
The resonator 803 includes an equivalent inductor L.sub.S and an
equivalent capacitor C.sub.S, and the resonator 804 includes an
equivalent inductor L.sub.P and an equivalent capacitor C.sub.P.
The equivalent inductor L.sub.S is formed from a transmission line
83, which preferably is a microstrip. The transmission line 83
includes a conducting layer 830, a dielectric layer 833 and a
substrate 832. The conducting layer 830 includes a conducting wire
831 serving as the equivalent inductor L.sub.S. A parasitic
capacitance formed by the conducting wire 831, the dielectric layer
833 and the substrate 832 acts as the equivalent capacitor C.sub.S.
The equivalent inductor L.sub.P is formed from a transmission line
84. The transmission line 84 includes a conducting layer 840, a
dielectric layer 843 and a substrate 842. The conducting layer 840
includes a conducting wire 841. The conducting wire 841 acts as the
equivalent inductor L.sub.P. A parasitic capacitance formed by the
conducting wire 841, the dielectric layer 843 and the substrate 842
acts as the equivalent capacitor C.sub.P. The equivalent inductors
L.sub.S and L.sub.P couple the broadband signals Sig2_In and
Sig2_Out through the magnetic field existing therebetween.
[0061] As shown in FIG. 11(b), there is a gap, denoted as "Gap2",
between the two chips 801 and 802 in the broadband connection
structure 80. The distance (D.sub.GAP2) of the Gap2 between the
conducting wires 831 and 841 is very small. The conducting wire
831, the Gap2 and the conducting wire 841 form the equivalent
coupling capacitor C.sub.C and use the electric field to couple the
broadband signals Sig2_In and Sig2_Out. The differential signals
constituting the broadband signal Sig2_In are input into the
transmission line 84 and then coupled to the transmission line 83
through the magnetic field and the electric field to output the
differential signals constituting the broadband signal Sig2_Out.
Alternatively, the differential signals constituting the broadband
signal Sig2_In are input into the transmission line 83 and then
coupled to the transmission line 84 through the magnetic field and
the electric field to output the differential signals constituting
the broadband signal Sig2_Out. The transmission line 84 and the
transmission line 83 have similar symmetric shapes, which are
symmetric with a virtual plane. A virtual ground is formed on the
virtual plane, so that the chip 801 and the chip 802 have the same
ground potential, which can prevent a parasitic effect from being
generated between the chip 801 and the chip 802.
[0062] In FIG. 11(b), the two transmission lines 83 and 84 form a
resonant coupling network 87. The substrates 832 and 842 may be
directly and electrically connected to the ground potential end.
Alternatively, the substrates 832 and 842 may be electrically
connected to portions 85 and 86 of the chips, respectively, with
the portions 85 and 86 electrically connected to the ground
potential end. The conducting wire 831 has a length, 831L,
preferably equal to or smaller than 1/5, e.g. about 1/5.about.
1/10, of a wavelength to which a lowest frequency in the operable
bandwidth of this structure corresponds. The width 831W or the
length 831L of the conducting wire 831 will affect the coupling
capacitance C.sub.C, and the length 831L of the conducting wire 831
will affect the inductance VLS of the equivalent inductor L.sub.S.
Similarly, the width 841W or the length 841L of the conducting wire
841 will affect the coupling capacitance C.sub.C, and the length
841L of the conducting wire 841 will affect the inductance VLP of
the equivalent inductor L.sub.P The conducting wire 831 and the
conducting wire 841 have a very small size and their projections
completely overlap in a vertical direction.
[0063] In the second preferred embodiment, the resonant coupling
network 87 has an equivalent circuit the same as that shown in FIG.
7(c), a M-like signal gain band the same as that shown in FIG.
10(a), relationships between signal gain flatness Rflat1 and
parameter Q.sub.LOADS the same as those shown in FIG. 10(b), and
relationships between bandwidths of the broadband signals Sig2_In
and Sig2_Out and parameter k the same as those shown in FIG. 10(c).
Please refer to FIG. 11(b), FIGS. 10(a) to (c) and FIG. 7(c). The
resonant coupling network 87 has an M-like signal gain band 704,
and the descriptions therefor are similar to the illustrations for
FIG. 10(a) and thus are omitted here. The value of the coupling
capacitance C.sub.C between the first resonator 7011 and the second
resonator 7021 of the resonant coupling network 87 is directly
proportional to the width 831W of the conducting wire 831 and the
width 841W of the conducting wire 841. The mutual inductance M1
between the first resonator 7011 and the second resonator 7021 of
the resonant coupling network 87 is directly proportional to the
length 831L and the length 841L. Either the length 831L or the
length 841L is directly proportional to the values of the
equivalent inductors L.sub.S and L.sub.P Either the width 831W or
the width 841W is directly proportional to the values of the
equivalent capacitor C.sub.S and C.sub.P. The inductance of each of
the equivalent inductors L.sub.S and L.sub.P can be adjusted by
adjusting the length 831L of the conducting wire 831 and the length
841L of the conducting wire 841, and the capacitance of each of the
equivalent capacitors C.sub.S and C.sub.P can be adjusted by
adjusting the widths 831W and 841W. The mutual inductance M1 and
the inductances of the equivalent inductors L.sub.S and L.sub.P are
in direct proportion, and the capacitance of the coupling
capacitance C.sub.C is directly proportional to the capacitances of
the equivalent capacitors C.sub.S and C.sub.P. Based on the above,
one skilled in the art can realize how to adjust the values of the
mutual inductance M1 and the coupling capacitance C.sub.C via the
sizes of the conducting wires 831 and 841.
[0064] In order to achieve good gain flatness of the M-like
signals, while maintaining a wide operation frequency band, the
lengths 831L and 841L of the conducting wires 831 and 841 can be
increased to increase the mutual inductance M1, and the widths 831W
and 841W can also be increased to raise the coupling capacitance
C.sub.C. The increase in the mutual inductance M1 and the coupling
capacitance C.sub.C will cause an increase in the parameter
Q.sub.LOADS or parameter Q.sub.LOADS, which will lead to a worse
signal gain flatness Rflat1. However, the increase in the parameter
Q.sub.LOADS or Q.sub.LOADS, i.e. a worse signal gain flatness, is
conducive to forming two distinct operation frequencies so as to
transmit different signals at two different frequencies.
[0065] Please refer to FIG. 12, which is a schematic diagram
showing a method for transmitting a broadband signal according to
the present disclosure. In step S101, a first resonator 7011 or 803
including a first magnetic field and a first conducting layer 7015
or 830 is provided. In addition, a second resonator 7012 or 804
including a second magnetic field and a second conducting layer
7025 or 840 is provided. In step S102, the two magnetic fields are
coupled. In step S103, the two conducting layers 7015/830 and
7025/840 are coupled to generate an electric field for transmitting
a broadband signal Sig1_In, Sig1_Out, Sig2_In or Sig2_Out.
[0066] Please refer to FIG. 13, which is a schematic diagram
showing a broadband connection method according to the present
disclosure. In step S201, a first resonator 7011 is configured on a
carrier 701, and a second resonator 7021 is configured on a chip
702. In step S202, a broadband signal is provided to the first
resonator 7011 or the second resonator 7021. In step S203, a
resonant coupling network 703 is formed by a magnetic coupling and
an electric coupling between the first resonator 7011 and the
second resonator 7021 to transmit a broadband signal Sig1_In or
Sig1_Out between the carrier 701 and the chip 702. In step S203,
the method to generate the magnetic coupling and the electric
coupling can be realized by flipping over the chip 702 to make its
top side face down and then configuring the chip 702 on the carrier
701.
[0067] Please refer to FIGS. 14(a) and 14(b), which are schematic
diagrams respectively showing the magnetic field coupling and
electric field coupling of a third preferred embodiment of the
present disclosure. The transmitting device 90 used to transmit a
broadband signal Sig3_In or Sig3_Out includes a first resonator
901, a second resonator 902 and a device body 94 receiving the
first resonator 901 and the second resonator 902. The first
resonator 901 includes a first magnetic field 91 and a first
conducting layer 903. The second resonator 902 being in
communication connection with the first resonator 901 includes a
second magnetic field 92 and a second conducting layer 904. The
first conducting layer 903 and the second conducting layer 904
couple to each other to form therebetween an electric field 93, and
the two magnetic fields 91 and 92 are coupled to each other to
transmit the broadband signals Sig3_In and Sig3_Out.
[0068] The specific structure of the transmitting device 90 is the
same as or similar to the first or second preferred embodiment of
the present disclosure, as shown in FIGS. 8(a)-8(b) or FIG. 11(b),
and has similar circuit features. As to how the shape or size of
the conductors of the first and second conducting layers 903 and
904 affects the parameters k, Q.sub.LOADS and Q.sub.LOADP, and how
the adjustments of the parameters k, Q.sub.LOADS and Q.sub.LOADP
affect the bandwidth of the broadband signals Sig3_In and Sig3_Out
are described above and thus are omitted here.
[0069] Some embodiments of the present disclosure are described in
the following.
[0070] 1. A broadband connection structure comprises a carrier and
a chip. The carrier includes a first resonator. The chip includes a
second resonator and is configured on the carrier using a flip-chip
method. The first resonator is connected to the second resonator
via a magnetic field and an electric field existing therebetween to
transmit a broadband signal between the carrier and the chip.
[0071] 2. A broadband connection structure of Embodiment 1, wherein
the first resonator includes a first equivalent inductor, and the
carrier includes a first split-rectangular conducting wire
constituting the first equivalent inductor; the second resonator
includes a second equivalent inductor, and the chip further
includes a second split-rectangular conducting wire constituting
the second equivalent inductor; the first split-rectangular
conducting wire has two first terminals, and the second
split-rectangular conducting wire has two second terminals; and the
broadband signal is a differential signal.
[0072] 3. A broadband connection structure of any one of the above
embodiments, wherein the first equivalent inductor and the second
equivalent inductor couple the broadband signal via the magnetic
field therebetween.
[0073] 4. A broadband connection structure of any one of the above
embodiments, wherein the differential signal is input to the first
terminals, coupled to the second split-rectangular conducting wire
via the magnetic field and the electric field and output from the
second terminals.
[0074] 5. A broadband connection structure of any one of the above
embodiments, wherein the differential signal is input to the second
terminals, coupled to the first split-rectangular conducting wire
via the magnetic field and the electric field and output from the
first terminals.
[0075] 6. A broadband connection structure of any one of the above
embodiments, further comprising: a virtual ground plane set between
the first terminals and between the second terminals, and each of
the first and second split-rectangular conducting wires is
symmetric with respect to the virtual ground plane so that the
carrier and the chip have an identical ground potential.
[0076] 7. A broadband connection structure of any one of the above
embodiments, wherein the first split-rectangular conducting wire
has a length and a width, the broadband connection structure has an
operable bandwidth, and one of the length and the width is less
than one-fifth of a wavelength to which a lowest frequency in the
operable bandwidth corresponds.
[0077] 8. A broadband connection structure of any one of the above
embodiments, wherein the carrier further includes a first substrate
and a first insulating layer between the first substrate and the
first split-rectangular conducting wire; the chip further includes
a second substrate and a second insulating layer between the second
substrate and the second split-rectangular conducting wire; and the
first substrate and the second substrate are formed from one of an
identical material and different materials.
[0078] 9. A broadband connection structure of any one of the above
embodiments, wherein the first resonator further includes a first
equivalent capacitor formed from the first split-rectangular
conducting wire, the first insulating layer and the first
substrate; and the second resonator further includes a second
equivalent capacitor formed from the second split-rectangular
conducting wire, the second insulating layer and the second
substrate constitute.
[0079] 10. A broadband connection structure of any one of the above
embodiments, wherein the first split-rectangular conducting wire
has a first parasitic capacitance; the second split-rectangular
conducting wire has a second parasitic capacitance; the first
resonator further includes a first equivalent capacitor formed from
the first parasitic capacitance; and the second resonator further
includes a second equivalent capacitor formed from the second
parasitic capacitance.
[0080] 11. A broadband connection structure of any one of the above
embodiments further comprises a gap between the carrier and the
chip; and an equivalent coupling capacitor formed from the first
split-rectangular conducting wire, the second split-rectangular
conducting wire and the gap and coupling the broadband signal via
the electric field.
[0081] 12. A broadband connection structure of any one of the above
embodiments further comprises a first chip including a first
resonator; and a second chip including a second resonator and
placed on the first chip by a flip-chip method, wherein the first
resonator is coupled to the second resonator by a magnetic field
and an electric field existing therebetween to transmit a broadband
signal between the first chip and the second chip.
[0082] 13. A broadband connection structure of Embodiment 12,
wherein the first resonator includes a first equivalent inductor
and a first equivalent capacitor, and the first chip further
includes a first transmission line. The first transmission line
includes a first conducting wire acting as the first equivalent
inductor, a first substrate, and a first dielectric layer. The
first chip has a first parasitic capacitance formed from the first
conducting wire, the first dielectric layer and the first substrate
and acting as the first equivalent capacitor.
[0083] 14. A broadband connection structure of any one of
Embodiments 12-13, wherein the second resonator includes a second
equivalent inductor and a second equivalent capacitor. The second
chip further includes a second transmission line, and the second
transmission line includes a second conducting wire acting as the
second equivalent inductor, a second substrate, and a second
dielectric layer. The second chip has a second parasitic
capacitance formed from the second conducting wire, the second
dielectric layer and the second substrate and acting as the second
equivalent capacitor.
[0084] 15. A broadband connection structure of any one of
Embodiments 12-14 further comprises a gap between the first and the
second chips; and an equivalent coupling capacitor formed from the
first conducting wire, the gap and the second conducting wire and
coupling the broadband signal via the electric field.
[0085] 16. A broadband connection structure of any one of
Embodiments 12-15, wherein the first resonator having a first
quality factor parameter is coupled to the second resonator having
a second quality factor parameter to form a resonant coupling
network; the resonant coupling network has an M-like signal gain
band including a bandwidth and a signal gain flatness; the first
resonator and the second resonator have a mutual inductance
therebetween and a coupling capacitance; and the bandwidth is a
function of the mutual inductance and the coupling capacitance, the
signal gain flatness is a function of one of the first quality
factor parameter and the second quality factor parameter.
[0086] 17. A broadband connection method comprises steps of
configuring a first resonator on a carrier and a second resonator
on a chip and forming a resonant coupling network through a
magnetic coupling and an electric coupling between the first
resonator and the second resonator to transmit a broadband signal
between the carrier and the chip.
[0087] 18. A broadband connection method of Embodiment 17 further
comprises steps of providing a first split-rectangular conducting
wire on the carrier to act as a first equivalent inductor, and
providing a second split-rectangular conducting wire on the chip to
act as a second equivalent inductor, placing the chip on the
carrier using a flip-chip method, and forming the magnetic coupling
using the first equivalent inductor and the second equivalent
inductor.
[0088] 19. A broadband connection method of any one of Embodiments
17-18 further comprises steps of configuring a first conducting
layer in the first resonator, configuring a second conducting layer
in the second resonator, and coupling the first conducting layer
and the second conducting layer to form an electric field.
[0089] 20. A broadband connection method of any one of Embodiments
17-19, wherein the first resonator has a first magnetic field, and
the second resonator has a second magnetic field. The method
further comprises a step of coupling the first magnetic field and
the second magnetic field.
[0090] While the disclosures here describe the terms of what is
presently considered to be the most practical and preferred
embodiments, it is to be understood that the disclosure needs not
be limited to the disclosed embodiments. On the contrary, it is
intended to cover various modifications and similar arrangements
included within the spirit and scope of the appended claims which
are to be accorded with the broadest interpretation so as to
encompass all such modifications and similar structures.
* * * * *