U.S. patent application number 14/188017 was filed with the patent office on 2015-04-16 for vapor deposition apparatus.
This patent application is currently assigned to Samsung Display Co., Ltd.. The applicant listed for this patent is Samsung Display Co., Ltd.. Invention is credited to Myung-Soo Huh, Cheol-Min Jang, Sung-Hun Key, In-Kyo Kim, Sung-Yong Lee.
Application Number | 20150101535 14/188017 |
Document ID | / |
Family ID | 52808557 |
Filed Date | 2015-04-16 |
United States Patent
Application |
20150101535 |
Kind Code |
A1 |
Lee; Sung-Yong ; et
al. |
April 16, 2015 |
VAPOR DEPOSITION APPARATUS
Abstract
A vapor deposition apparatus includes a substrate mount unit on
which a substrate is mounted, a plurality of first nozzle units
which injects a first raw material in a direction of the substrate
mount unit, a plurality of second nozzle units which is alternately
disposed with the plurality of first nozzle units and injects a
second raw material in the direction of the substrate mount unit,
and a plasma module unit which supplies the second raw material to
the plurality of second nozzle units. The second raw material is a
radical, and the substrate mount unit includes an electrostatic
generation part.
Inventors: |
Lee; Sung-Yong;
(Yongin-City, KR) ; Key; Sung-Hun; (Yongin-City,
KR) ; Kim; In-Kyo; (Yongin-City, KR) ; Jang;
Cheol-Min; (Yongin-City, KR) ; Huh; Myung-Soo;
(Yongin-City, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Samsung Display Co., Ltd. |
Yongin-City |
|
KR |
|
|
Assignee: |
Samsung Display Co., Ltd.
Yongin-City
KR
|
Family ID: |
52808557 |
Appl. No.: |
14/188017 |
Filed: |
February 24, 2014 |
Current U.S.
Class: |
118/712 ;
118/723R |
Current CPC
Class: |
C23C 16/45551 20130101;
C23C 16/45563 20130101; C23C 16/45536 20130101; C23C 16/452
20130101 |
Class at
Publication: |
118/712 ;
118/723.R |
International
Class: |
C23C 16/455 20060101
C23C016/455; C23C 16/50 20060101 C23C016/50; C23C 16/52 20060101
C23C016/52 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 10, 2013 |
KR |
10-2013-0120873 |
Claims
1. A vapor deposition apparatus comprising: a substrate mount unit
on which a substrate is mounted; a plurality of first nozzle units
which injects a first raw material in a direction of the substrate
mount unit; a plurality of second nozzle units which is alternately
disposed with the plurality of first nozzle units, injects a second
raw material in the direction of the substrate mount unit; and a
plasma module unit which supplies the second raw material to the
plurality of second nozzle units, wherein the second raw material
is a radical, and the substrate mount unit comprises an
electrostatic generation part.
2. The vapor deposition apparatus of claim 1, wherein the
electrostatic generation part comprises an electrode to which a
direct current voltage is applied.
3. The vapor deposition apparatus of claim 1, wherein each first
nozzle unit among the plurality of first nozzle units selectively
injects the first raw material and a purge gas, in the direction of
the substrate mount unit.
4. The vapor deposition apparatus of claim 3, further comprising a
switch unit which selectively supplies the first raw material and
the purge gas, wherein the each first nozzle unit is connected to
the switch unit.
5. The vapor deposition apparatus of claim 4, wherein the switch
unit comprises: an inflow channel connected to the plurality of
first nozzle units, a first raw material channel and a purge gas
channel each connected to the inflow channel, and a first valve
disposed in the first raw material channel, and a second valve
disposed in the purge gas channel.
6. The vapor deposition apparatus of claim 4, further comprising: a
sensor unit which senses a position of the substrate mount unit,
and a control unit which receives position information
corresponding to the position of the substrate mount unit.
7. The vapor deposition apparatus of claim 6, wherein the control
unit controls an operation of the switch unit according to the
position information.
8. The vapor deposition apparatus of claim 7, wherein the each
first nozzle unit injects the first raw material when the substrate
mount unit is disposed under the plurality of first nozzle
units.
9. The vapor deposition apparatus of claim 1, wherein the plasma
module unit comprises: a plasma generator, a corresponding surface
surrounding the plasma generator, and a plasma generating space
defined between the plasma generator and the corresponding
surface.
10. The vapor deposition apparatus of claim 9, further comprising a
diffusion unit between the plasma module unit and the plurality of
second nozzle units.
11. The vapor deposition apparatus of claim 1, further comprising
an exhaust unit and a purge unit between a first nozzle unit among
the plurality of first nozzle units, and a second nozzle unit among
the plurality of second nozzle units and adjacent to the first
nozzle unit in a moving direction of the substrate mount unit.
12. The vapor deposition apparatus of claim 11, further comprising
a first lower plate in which a plurality of slits is defined,
wherein the first lower plate is detachably coupled to a lower end
of the first nozzle unit.
13. The vapor deposition apparatus of claim 12, further comprising
a plurality of second lower plates, and a plurality of slits
defined in each second lower plate, wherein the plurality of second
lower plates is respectively coupled to lower ends of the second
nozzle unit and the purge unit.
14. A vapor deposition apparatus comprising: a substrate mount unit
on which a substrate is mounted, the substrate mount unit
comprising an electrostatic generation part; a plurality of first
nozzle units which injects a first raw material in a direction of
the substrate mount unit; a plurality of second nozzle units which
is alternately disposed with the plurality of first nozzle units
and injects a second raw material having a radical form, in the
direction of the substrate mount unit; a diffusion unit which
distributes the second raw material into the plurality of second
nozzle units; and a plasma module unit which supplies the second
raw material to the diffusion unit, wherein the electrostatic
generation part of the substrate mount unit induces the second raw
material to the substrate mount unit.
15. The vapor deposition apparatus of claim 14, wherein the plasma
module unit comprises: a plasma generator, a corresponding surface
surrounding the plasma generator, and a plasma generating space
defined between the plasma generator and the corresponding
surface.
16. The vapor deposition apparatus of claim 14, wherein each first
nozzle unit among the plurality of first nozzle units selectively
injects the first raw material and a purge gas in the direction of
the substrate mount unit.
17. The vapor deposition apparatus of claim 16, wherein the each
first nozzle unit injects the first raw material when the substrate
mount unit is disposed under the plurality of first nozzle
units.
18. The vapor deposition apparatus of claim 17, further comprising:
a sensor unit which senses a position of the substrate mount unit,
and a control unit which receives position information
corresponding to the position of the substrate mount unit.
19. The vapor deposition apparatus of claim 14, further comprising
an exhaust unit and a purge unit between a first nozzle unit among
the plurality of first nozzle units and a second nozzle unit among
the plurality of second nozzle units and adjacent to the first
nozzle unit in a moving direction of the substrate mount unit.
20. The vapor deposition apparatus of claim 19, further comprising
a plurality of lower plates, and a plurality of slits defined in
each lower plate, wherein the plurality of lower plates is
detachably coupled to respective lower ends of the first nozzle
unit, the second nozzle unit and the purge unit.
Description
[0001] This application claims priority to Korean Patent
Application No. 10-2013-0120873, filed on Oct. 10, 2013, and all
the benefits accruing therefrom under 35 U.S.C. .sctn.119, the
disclosure of which is incorporated herein in its entirety by
reference.
BACKGROUND
[0002] 1. Field
[0003] The invention relates to a vapor deposition apparatus.
[0004] 2. Description of the Related Art
[0005] Each of semiconductor devices, display devices and other
electronic devices includes a plurality of thin films. The
plurality of thin films may be formed through various methods.
Among these, a vapor deposition method may be one among the various
methods.
[0006] The vapor deposition method uses a gas as a raw material for
forming the thin films. Examples of the vapor deposition method
include a chemical vapor deposition ("CVD") method, an atomic layer
deposition ("ALD"), method and other various methods.
[0007] Among these, in the ALD method, one raw material is injected
into a vessel, and then purged and pumped, to adsorb a single
molecular (e.g., atomic) layer or one layer among multiple layers
on a substrate. Then, another raw material is injected into the
vessel, and then purged and pumped, to finally form a desired
single atomic layer or multiple atomic layers.
[0008] Organic light-emitting display devices have wider viewing
angles, better contrast characteristics, and faster response speeds
than other display devices, and thus have drawn attention as a
next-generation display device. Such an organic light-emitting
display apparatus includes an intermediate layer including an
organic emission layer between first and second electrodes which
are opposite to each other, and one or more various thin films.
Here, a deposition process may be performed to form thin films of
the organic light-emitting display devices.
SUMMARY
[0009] One or more exemplary embodiments of the invention include a
vapor deposition apparatus having improved deposition
efficiency.
[0010] According to one or more exemplary embodiment of the
invention, a vapor deposition apparatus includes: a substrate mount
unit on which a substrate is mounted; a plurality of first nozzle
units which injects a first raw material in a direction of the
substrate mount unit; a plurality of second nozzle units which is
alternately disposed with the plurality of first nozzle units and
injects a second raw material in the direction of the substrate
mount unit; and a plasma module unit which supplies the second raw
material to the plurality of second nozzle units. The second raw
material is a radical, and the substrate mount unit includes an
electrostatic generation part.
[0011] The electrostatic generation part may include an electrode
to which a direct current ("DC") voltage may be applied.
[0012] Each first nozzle unit may selectively inject the first raw
material and a purge gas in the direction of the substrate mount
unit.
[0013] The vapor deposition apparatus may further include a switch
unit which selectively supplies the first raw material and the
purge gas, and each first nozzle unit may be connected to the
switch unit.
[0014] The switch unit may include an inflow channel connected to
the plurality of first nozzle units, a first raw material channel
and a purge gas channel each connected to the inflow channel, and a
first valve disposed in the first raw material channel, and a
second valve disposed in the purge gas channel.
[0015] The vapor deposition apparatus may further include a sensor
unit which senses a position of the substrate mount unit, and a
control unit which receives position information corresponding to
the position of the substrate mount unit.
[0016] The control unit may control an operation of the switch unit
according to the position information.
[0017] Each first nozzle unit may inject the first raw material
when the substrate mount unit is disposed under the plurality of
first nozzle units.
[0018] The plasma module unit may include a plasma generator, a
corresponding surface surrounding the plasma generator, and a
plasma generating space defined between the plasma generator and
the corresponding surface.
[0019] The vapor deposition apparatus may further include a
diffusion unit between the plasma module unit and the plurality of
second nozzle units.
[0020] The vapor deposition apparatus may further include an
exhaust unit and a purge unit between a first nozzle unit among the
plurality of first nozzle units, and a second nozzle unit among the
plurality of second nozzle units and adjacent to the first nozzle
unit in a moving direction of the substrate mount unit.
[0021] The vapor deposition apparatus may further include a first
lower plate in which a plurality of slits is defined, and the first
lower plate may be detachably coupled to a lower end of the first
nozzle unit.
[0022] The vapor deposition apparatus may further include a
plurality of second lower plates, and a plurality of slits defined
in each second lower plate. The plurality of second lower plates
may be respectively coupled to lower ends of the second nozzle unit
and the purge unit.
[0023] According to one or more exemplary embodiments of the
invention, a vapor deposition apparatus includes: a substrate mount
unit on which a substrate is mounted, the substrate mount unit
including an electrostatic generation part; a plurality of first
nozzle units injecting a first raw material in a direction of the
substrate mount unit; a plurality of second nozzle units which is
alternately disposed with the plurality of first nozzle units and
injects a second raw material having a radical form in the
direction of the substrate mount unit; a diffusion unit which
distributes the second raw material into the plurality of second
nozzle units; and a plasma module unit which supplies the second
raw material into the plurality of second nozzle units. The
electrostatic generation part of the substrate mount unit induces
the second raw material to the substrate mount unit.
[0024] The plasma module unit may include a plasma generator, a
corresponding surface surrounding the plasma generator, and a
plasma generating space defined between the plasma generator and
the corresponding surface.
[0025] Each first nozzle unit may selectively inject the first raw
material and a purge gas in the direction of the substrate mount
unit.
[0026] Each first nozzle unit may inject the first raw material
when the substrate mount unit is disposed under the plurality of
first nozzle units.
[0027] The vapor deposition apparatus may further include a sensor
unit which senses a position of the substrate mount unit, and a
control unit which receives position information corresponding to
the position of the substrate mount unit.
[0028] The vapor deposition apparatus may further include an
exhaust unit and a purge unit between a first nozzle unit among the
plurality of first nozzle units and a second nozzle unit among the
plurality of second nozzle units and adjacent to the first nozzle
unit in a moving direction of the substrate mount unit.
[0029] The vapor deposition apparatus may further include a
plurality of lower plates, and a plurality of slits defined in each
lower plate. The plurality of lower plates is detachably coupled to
respective lower ends of the first nozzle unit, the second nozzle
unit and the purge unit.
BRIEF DESCRIPTION OF THE DRAWINGS
[0030] These and/or other features will become apparent and more
readily appreciated from the following description of the exemplary
embodiments, taken in conjunction with the accompanying drawings in
which:
[0031] FIG. 1 is a schematic perspective view of an exemplary
embodiment of a vapor deposition apparatus according to the
invention;
[0032] FIG. 2 is a schematic cross-sectional view illustrating
portion A of the vapor deposition apparatus of FIG. 1;
[0033] FIG. 3 is a schematic cross-sectional view illustrating an
exemplary embodiment of a section of a first nozzle unit of the
vapor deposition apparatus of FIG. 1.
[0034] FIG. 4 is a schematic plan view illustrating an exemplary
embodiment of a lower plate of the vapor deposition apparatus of
FIG. 1;
[0035] FIG. 5 is a schematic cross-sectional view of an exemplary
embodiment of an organic light-emitting display device according to
the invention; and
[0036] FIG. 6 is an enlarged view illustrating portion F of FIG.
5.
DETAILED DESCRIPTION
[0037] Since the invention may have diverse modified embodiments,
exemplary embodiments are illustrated in the drawings and are
described in the detailed description of the invention. However,
this does not limit the invention within specific embodiments and
it should be understood that the invention covers all the
modifications, equivalents, and replacements within the idea and
technical scope of the invention. In describing the invention, when
it is determined that the detailed description of the known art
related to the invention may obscure the gist of the invention, the
detailed description thereof will be omitted.
[0038] It will be understood that although the terms of first and
second are used herein to describe various elements, these elements
should not be limited by these terms. Terms are only used to
distinguish one component from other components.
[0039] In the following description, the technical terms are used
only for explaining a specific exemplary embodiment while not
limiting the invention. The terms of a singular form may include
plural forms unless referred to the contrary. In the drawings, the
thickness or size of each layer is exaggerated, omitted, or
schematically illustrated for convenience in description and
clarity.
[0040] In addition, in describing each constituent element, when
each constituent element is described to be formed "on" or "under"
thereof, on and under all include those to be formed directly or
through other constituent elements, and the criteria regarding on
and under will be described based on the drawings. As used herein,
connected may refer to elements being physically, electrically
and/or fluidly connected to each other.
[0041] Hereinafter, exemplary embodiments of the invention are
described in more detail with reference to the accompanying
drawings and, while describing of the accompanying drawings, the
same or corresponding components are given with the same number.
Therefore, its overlapping description will be omitted.
[0042] Embodiments of the invention are described herein with
reference to cross-section illustrations that are schematic
illustrations of idealized embodiments (and intermediate
structures) of the invention. As such, variations from the shapes
of the illustrations as a result, for example, of manufacturing
techniques and/or tolerances, are to be expected. Thus, embodiments
of the invention should not be construed as limited to the
particular shapes of regions illustrated herein but are to include
deviations in shapes that result, for example, from
manufacturing.
[0043] All methods described herein can be performed in a suitable
order unless otherwise indicated herein or otherwise clearly
contradicted by context. The use of any and all examples, or
exemplary language (e.g., "such as"), is intended merely to better
illustrate the invention and does not pose a limitation on the
scope of the invention unless otherwise claimed. No language in the
specification should be construed as indicating any non-claimed
element as essential to the practice of the invention as used
herein.
[0044] Hereinafter, the invention will be described in detail with
reference to the accompanying drawings.
[0045] FIG. 1 is a schematic perspective view of an exemplary
embodiment of a vapor deposition apparatus according to the
invention, FIG. 2 is a schematic cross-sectional view illustrating
portion A of the vapor deposition apparatus of FIG. 1, FIG. 3 is a
schematic cross-sectional view illustrating a section of an
exemplary embodiment of a first nozzle unit of the vapor deposition
apparatus of FIG. 1, and FIG. 4 is a schematic plan view
illustrating an exemplary embodiment of a lower plate of the vapor
deposition apparatus of FIG. 1.
[0046] Referring to FIGS. 1 to 4, an exemplary embodiment of a
vapor deposition apparatus 100 according to the invention may
include a substrate mount unit P on which a substrate S is mounted,
a plurality of first nozzle units 110 which injects a first raw
material in a direction of the substrate mount unit P, a plurality
of second nozzle units 120 which injects a second raw material in a
direction of the substrate mount unit P, and a plasma module unit
150 supplying the second raw material to the plurality of second
nozzle units 120.
[0047] Although not shown, the vapor deposition apparatus 100 may
include a chamber (not shown) in which the substrate S and the
substrate mount unit P are accommodated. The chamber may be
connected to a pump (not shown) to control a pressure atmosphere
within the chamber during a deposition process performed in the
chamber. Also, the chamber may include at least one entrance (not
shown) through which the substrate S is load or unloaded to and
from the chamber, and a driving unit (not shown) for transferring
or moving the substrate mount unit P.
[0048] The substrate mount unit P may mount the substrate S thereon
and transfer the substrate S into the chamber (not shown). The
substrate mount unit P may include a fixing unit (not shown) for
fixing the substrate S with respect to the substrate mount unit P.
The fixing unit (not shown) may be a clamp, a pressing unit, an
adhesion material or other various kinds of units. The substrate
mount unit P moves or reciprocates along one direction during the
deposition process to adjust a thickness of a thin film deposited
on the substrate S during the deposition process.
[0049] Also, the substrate mount unit P may include an
electrostatic generation part. In one exemplary embodiment, for
example, the electrostatic generation part may include an electrode
W within the substrate mount unit P. When a direct current ("DC")
voltage is applied to the electrostatic generation part and/or the
electrode W, the electrode W may generate static electricity. The
static electricity generated in the substrate mount unit P may
induce ions to the substrate mount unit P. In detail, as described
below, as the second raw material having a radical form increases
in directivity and mobility, dissipation of the second raw material
may be minimized, and also, an amount of second raw material
reaching the substrate S may increase to improve deposition
efficiency of the vapor deposition apparatus 100.
[0050] The first nozzle units 110 may inject the first raw material
in the direction of the substrate mount unit P. The first nozzle
units 110 may be considered as defined in a body of the vapor
deposition apparatus 100, or may be considered as including a flow
path or flow channel for the first raw material and the portion of
the body in which the flow path or flow channel defined. The first
raw material may be supplied from a supply tank (not shown) to the
first nozzle units 110. Here, the first raw material is supplied to
the first nozzle units 110 in a horizontal direction. The
horizontal direction may be defined in a plane of the body of the
vapor deposition apparatus, such as in a Z-direction within a Y-Z
plane with respect to FIG. 1. The horizontal direction may be
parallel to a plane of the substrate mount unit P. That is, the
first raw material supplied to the first nozzle units 110 in
parallel with the substrate mount unit P, may be injected in the
direction of the substrate mount unit P by the first nozzle units
110. An injection direction may be defined in a direction opposite
to the X-direction with respect to FIG. 1. In one exemplary
embodiment, the injection direction of the first raw material may
be considered orthogonal to a supply direction of the first raw
material.
[0051] The first nozzle units 110 may inject the first raw material
in the direction of the substrate mount unit P as well as
selectively inject a purge gas. In one exemplary embodiment, for
example, if the substrate mount unit P is not disposed under the
first nozzle units 110, the first nozzle units 110 may inject the
purge gas instead of the first raw (e.g., source) material. That
is, since the first nozzle units 110 intermittently supply the
first raw material according to a position of the substrate mount
unit P, a consumed amount of first raw material may decrease.
[0052] For this, the first nozzle units 110 are connected to a
switch unit 170. The switch unit 170 includes an inflow pipe (e.g.,
inflow channel) 172 connected to the first nozzle units 110, a
first raw material pipe 173 and purge gas pipe 174 connected to the
inflow pipe 172, and a first valve 175 disposed in the first raw
material pipe 173 and a second valve 176 disposed in the purge gas
pipe 174 to selectively supply the first raw material or the purge
gas into the first nozzle units 110, respectively.
[0053] In detail, if the substrate mount unit P is disposed under
the first nozzle units 110, the first valve 175 may be opened and
the second valve 176 may be closed, to supply the first raw
material to the first nozzle units 110. With the second valve 176
closed while the first valve 175 is opened, the purge gas may not
be supplied into the inflow pipe 172. Conversely, if the substrate
mount unit P is not disposed under the first nozzle units 110, the
first valve 175 may be closed and the second valve 176 may be
opened to supply the purge gas to the first nozzle units 110. With
the first valve 175 closed while the second valve 176 is opened,
the first raw material may not be supplied into the inflow pipe
172.
[0054] Thus, since the raw material is selectively supplied, an
overall consumed amount of first raw material may decrease, and
injection of the first raw material into the chamber (not shown)
when the substrate mount unit P is not disposed under the first
nozzle units 110 may be reduced or effectively prevented to
minimize contamination of the inside of the chamber (not shown) due
to the first raw material. Also, in a conventional vapor deposition
apparatus, a stabilizing plate is disposed on each of opposing
sides of a related-art substrate mount unit to prevent unnecessary
or unneeded first raw material from being injected into the
chamber. Since the raw material is selectively supplied into the
chamber with one or more exemplary embodiment of a vapor deposition
apparatus according to the invention, the conventional stabilizing
plate may be omitted to reduce an overall length or dimension of
the vapor deposition apparatus 100.
[0055] The vapor deposition apparatus 100 may further include a
sensor unit (not shown) sensing a position of the substrate mount
unit P. The sensed position of the substrate mount unit P may be
used to control an operation of the switch unit 170 according to a
position of the substrate mount unit P. The vapor deposition
apparatus 100 may further include a control unit (not shown)
receiving position information of the substrate mount unit P from
the sensor unit (not shown), and the received position information
may be used to further control the operation of the switch unit
170.
[0056] A plurality of lower plates 160 is respectively detachably
coupled to lower ends of the first nozzle units 110. The lower
plate 160 may serve as a shower head type element to distribute and
disperse material received thereby and passing therethrough. The
lower plate 160 includes a plate-shaped body 162, and a plurality
of slits 164 defined in the body 162 to uniformly inject the first
raw material from the first nozzle units 110. The plurality of
slits 164 may expose an inner area of the first nozzle units 110 in
which the first raw material flows, to an outside of the first
nozzle units 110 such that the first raw material may flow from the
inner area to outside the first nozzle units 110. An individual
lower plate 160 may be a single, unitary, indivisible member, and
may solely define the slits 164.
[0057] Although the plurality of discrete slits 164 arranged in one
line is illustrated in FIG. 4, the invention is not limited
thereto. In an alternative exemplary embodiment, for example, the
plurality of discrete slits 164 may be arranged in a plurality of
rows extended in a length direction of the body 162 and arranged in
a width direction perpendicular to the length direction of the body
162, or circularly and/or concentrically arranged. A shape of an
individual slit 164 is not limited to the circular planar shape
shown in FIG. 1, and exemplary embodiments of the slit 164 may
include various planar shapes suitable for the purpose described
herein. Since the lower plates 160 are respectively detachably
coupled to the first nozzle units 110, replacing and cleaning
processes thereof may be relatively easily performed. Also, lower
plates 160 may be respectively detachably coupled to lower ends of
the plurality of second nozzle units 120 and/or purge units 130a
and 130b.
[0058] The second nozzle units 120 are alternately disposed with
the plurality of first nozzle units 110 and inject the second raw
material having the radical form in the direction of the substrate
mount unit P. The second nozzle units 120 may be considered as
defined in the body of the vapor deposition apparatus 100, or may
be considered as including a flow path or flow channel for the
second raw material and the portion of the body in which the flow
path or flow channel defined. The second raw material having the
radical form may be supplied into the second nozzle units 120 from
the plasma module unit 150.
[0059] The plasma module unit 150 may be disposed inside or outside
the chamber (not shown) and include a plasma generating unit (not
shown) for generating plasma.
[0060] The plasma generating unit (not shown) may include a plasma
generator to which a voltage is applied, a corresponding surface
surrounding the plasma generator, and a plasma generating space
defined between the plasma generator (not shown) and the
corresponding surface. The plasma generator may be a cylindrical
electrode to which a voltage is applied, and the corresponding
surface may be a grounded electrode surrounding the plasma
generator. However, the invention is not limited thereto. In one
exemplary embodiment, for example, the plasma generator may be
grounded, and a voltage may be applied to the corresponding
surface.
[0061] In the plasma generating unit (not shown), when a pulse
voltage is applied to the plasma generator to generate a potential
difference between the plasma generator and the corresponding
surface, plasma may be generated in the plasma generating space.
Then, when the second raw material is injected into the plasma
generating space (not shown) in which the plasma is generated, the
second raw material may have the radical form. Also, since the
plasma is generated within the plasma module unit 150 spaced apart
from a region in which the deposition process is performed, damage
of the substrate S due to the plasma may be reduced or effectively
prevented.
[0062] The vapor deposition apparatus 100 may further include a
diffusion unit 152 disposed between the plasma module unit 150 and
the second nozzle units 120. The diffusion unit 152 may diffuse the
second raw material supplied from the plasma module unit 150 to
distribute the second raw material into the plurality of second
nozzle units 120. Since the plasma module unit 150 may commonly
supply the second raw material to the plurality of second nozzle
units 120, the diffusion unit 152 distributes the second raw
material into the plurality of second nozzle units 120.
[0063] In one exemplary embodiment, for example, the diffusion unit
152 may include a pipe or channel (not shown) connected to the
plurality of second nozzle units 120. Alternatively, the diffusion
unit 152 may include a plurality of plates (not shown). The
plurality of plates (not shown) may be provided as several layers
in a cross-sectional or thickness direction (e.g., X-direction) of
the vapor deposition apparatus 100. A plurality of holes through
which the second raw material passes may be defined in each of the
plates (not shown) to adjust a moving path of the second raw
material through the diffusion unit 152, thereby uniformly
supplying the second raw material from the plasma module unit 150
to the plurality of nozzle units 120.
[0064] The second raw material injected through the plurality of
second nozzle units 120 may be induced in the direction of the
substrate mount unit P by the static electricity generated in the
substrate mount unit P. That is, since the second raw material
having the radical form increases in directivity and mobility, the
second raw material having the radical form that may be easily
dissipated may more easily reach the substrate S. Thus,
uncontrolled or stray dissipation of the second raw material may be
minimized, and an amount of second raw material reaching the
substrate S may increase to improve the deposition efficiency of
the vapor deposition apparatus 100.
[0065] The purge units 130a and 130b and exhaust units 140a and
140b may be further provided between the first and second nozzle
units 110 and 120. The purge units 130a and 130b and exhaust units
140a and 140b may be considered as defined in the body of the vapor
deposition apparatus 100, or may be considered as including a flow
path or flow channel and the portion of the body in which the flow
path or flow channel defined.
[0066] If it is assumed that the substrate mount unit P moves in a
Y-direction, the purge units 130a and 130b may include a first
purge unit 130a disposed at a position following the first nozzle
unit 110 and a second purge unit disposed at a position following
the second nozzle unit 120. Likewise, the exhaust units 140a and
140b may include a first exhaust unit 140a disposed at a position
following the first nozzle unit 110 and a second exhaust unit 140b
disposed at a position following the second nozzle unit 120 with
respect to the same Y-moving direction of the substrate mount unit
P.
[0067] The first purge unit 130a and the second purge unit 130b
inject the purge gas in a direction of the substrate S. The purge
gas may be a gas which does not affect the deposition process and
does not actively contribute to a material being deposited on the
substrate S, e.g., an argon gas or a nitrogen gas. The purge gas
may pass from an inner area of the purge units 130a and 130b to an
outside of the purge units 130a and 130b, via the slits 164 defined
in the body 162 of the lower plate 160, but the invention is not
limited thereto.
[0068] The first and second exhaust units 140a and 140b exhaust in
a direction opposite to that of (e.g., away from) the substrate S,
byproducts separated from the substrate S by the purge gas, and
extra or unconsumed first and second raw materials which do not
react during the deposition process.
[0069] Hereinafter, an exemplary embodiment of a method for forming
a thin film on the substrate S by using the vapor deposition
apparatus 100 will be described with reference to FIGS. 1 to 3.
Also, an exemplary embodiment of a structure in which an
Al.sub.xO.sub.y thin film is formed on the substrate S while the
substrate mount unit P moves in the Y-direction of FIG. 1 will be
described as an example. However, the invention is not limited
thereto. In one exemplary embodiment, for example, the substrate
mount unit P may reciprocate in the Y-direction indicated in the
figures, and in a direction opposite to the Y-direction.
[0070] A method for forming a thin film on the substrate S by using
the vapor deposition apparatus 100 includes mounting a substrate S
that is an object on which a raw material is deposited, on the
substrate mount unit P. When the substrate mount unit P, such as
having the substrate mounted thereon, is disposed under one or more
of the first nozzle units 110, a position of the substrate mount
unit P is sensed by a sensor unit (not shown). The first nozzle
unit 110 injects the first raw material in a direction of the
substrate S under the control of a control unit (not shown) which
receives position information sensed by the sensor unit.
[0071] In one exemplary embodiment, for example, the first raw
material may be a gas including aluminum (Al) atoms such as
trimethyl aluminium ("TMA") that is in a gas state. Thus, a layer
including adsorbed Al may be formed on a top surface of the
substrate S. The formed adsorption layer may include a chemical
adsorption layer and a physical adsorption layer. Here, the
physical adsorption layer having relatively weak intermolecular
coupling force may be separated from the substrate S by the purge
gas injected from the first purge unit 130a that is disposed at a
position following the first nozzle unit 110 with respect to a
traveling direction of the substrate S. Also, the physical
adsorption layer which has been separated from the substrate S may
be effectively removed from the substrate S through pumping of the
first exhaust unit 140a disposed at a position following the first
nozzle unit 110 with respect to the traveling direction of the
substrate S.
[0072] In succession, the substrate mount unit P may continuously
move along the Y-direction, and the second nozzle unit 120 may
inject the second raw material onto the substrate S. The second raw
material has a radical shape. The second raw material may react
with the chemical adsorption layer formed by the first raw material
that is previously adsorbed on the substrate S or may be
substituted for a portion of the chemical adsorption layer, to
finally form a desired deposition layer including adsorbed
material, for example, an Al.sub.xO.sub.y layer. However, the
superfluous or remaining second raw material may remain on the
substrate S as a physical adsorption layer.
[0073] The physical adsorption layer formed by the second raw
material remaining on the substrate S may be separated from the
substrate S by the purge gas injected from the second purge unit
130b disposed at a position following the second nozzle unit 120
with respect to the traveling direction of the substrate S, and
then be effectively removed from the substrate S through pumping of
the second exhaust unit 140b disposed at a position following the
second nozzle unit 120 with respect to the traveling direction of
the substrate S. Thus, a desired single molecular or atomic layer
(e.g., thin film layer) may be formed on the substrate S.
[0074] As discussed above, the substrate mount unit P may include
an electrostatic generation part for inducing the second raw
material toward the substrate mount unit P. Thus, the second raw
material may increase in directivity and mobility, and an amount of
second raw material that participates in the above-described
chemical reaction may increase to improve the deposition efficiency
of the vapor deposition apparatus 100.
[0075] Also, as the substrate mount unit P continuously moves in
the Y-direction, the substrate mount unit P may be positioned to
not overlap the first nozzle unit 110. Here, the sensor unit (not
shown) may sense a position of the substrate mount unit P, and then
the control unit (not shown) receiving the position information may
control the switch unit 170 to inject the purge gas from the first
purge unit 130a instead of the first raw material from the first
nozzle unit 110. Thus, the consumption of the first raw material
may be reduced to minimize contamination of the inside of the
chamber (not shown) due to the first raw material.
[0076] FIG. 5 is a schematic cross-sectional view of an exemplary
embodiment of an organic light-emitting display device which may be
manufactured by using the vapor deposition apparatus of FIG. 1, and
FIG. 6 is an enlarged view illustrating portion F of FIG. 5.
[0077] In detail, FIGS. 5 and 6 illustrate an organic
light-emitting display apparatus which may be manufactured by using
the above-described vapor deposition apparatus (see reference
numeral 100 of FIG. 1).
[0078] An organic light-emitting display apparatus 10 is disposed
on a substrate 30. The substrate 30 may include a glass, plastic or
metal material.
[0079] A buffer layer 31 provides a planarized surface on the
substrate 30. The buffer layer 31 may include an insulation
material for reducing or effectively preventing moisture and
foreign substances from permeating in a direction of the substrate
30.
[0080] A thin film transistor ("TFT") 40, a capacitor 50 and an
organic light-emitting device 60 are disposed on the buffer layer
31. The TFT 40 includes an active layer 41, a gate electrode 42,
and source and drain electrodes 43. The organic light-emitting
device 60 includes a first electrode 61, a second electrode 62, and
an intermediate layer 63.
[0081] The capacitor 50 includes a first capacitor electrode 51 and
a second capacitor electrode 52.
[0082] In detail, the active layer 41 has a predetermined pattern
and is disposed on a top surface of the buffer layer 31. The active
layer 41 may include an inorganic semiconductor material such as
silicon, an organic semiconductor material, or an oxide
semiconductor material. In an exemplary embodiment of manufacturing
an organic light-emitting display apparatus, the active layer 41
may be formed by doping a P-type or N-type dopant. The first
capacitor electrode 51 may be disposed in the same layer as the
gate electrode 42 and include a same material as the gate electrode
42.
[0083] A gate insulation layer 32 is disposed on the active layer
41. The gate electrode 42 is disposed on the gate insulation layer
32 to correspond to the active layer 41. An interlayer dielectric
33 is disposed to cover the gate electrode 42. The source and drain
electrodes 43 are disposed on the interlayer dielectric 33 to
contact a predetermined region of the active layer 41 via a contact
hole defined in various layers of the organic light-emitting
display apparatus. The second capacitor electrode 52 may be in a
same layer (e.g., a same single layer) as the source and drain
electrodes 43, and may include a same material as the source and
drain electrodes 43.
[0084] A passivation layer 34 is disposed to cover the source and
drain electrodes 43. A separate insulation layer (not shown) may be
further disposed on the passivation layer 34 to planarize the thin
film transistor 40.
[0085] The first electrode 61 is disposed on the passivation layer
34. The first electrode 61 is electrically connected to one of the
source and drain electrodes 43 via a contact hole defined in the
passivation layer 34. Also, a pixel defining layer 35 is disposed
to cover the first electrode 61. A predetermined opening 64 is
defined in the pixel defining layer 35. The intermediate layer 63
including the organic light-emitting layer is disposed within a
region limited by the opening 64. The second electrode 62 is
disposed on the intermediate layer 63 within the opening 64.
[0086] An encapsulation layer 70 is disposed on the second
electrode 62. The encapsulation layer 70 may include an organic or
inorganic material. Alternatively, the encapsulation layer 70 may
have a structure in which the organic and inorganic materials are
alternately stacked on each other.
[0087] In an exemplary embodiment of manufacturing an organic
light-emitting display apparatus, the encapsulation layer 70 may be
formed by using the above-described vapor deposition apparatus (see
reference numeral 100 of FIG. 1). That is, the substrate 30
including the second electrode 62 disposed thereon may pass through
the above-described vapor deposition apparatus (see reference
numeral 100 of FIG. 1) to form a desired layer, such as a thin film
layer.
[0088] Particularly, the encapsulation layer 70 may include an
inorganic layer member 71 and an organic layer member 72. Also, the
inorganic layer member 71 may include a plurality of layers 71a,
71b and 71c, and the organic layer member 72 may include a
plurality of layers 72a, 72b and 72c. Here, the plurality of layers
71a, 71b and 71c of the inorganic layer member 71 may be
respectively formed by using the vapor deposition apparatus (see
reference numeral 100 of FIG. 1).
[0089] However, exemplary embodiments of the invention are not
limited thereto. That is, other layers such as the buffer layer 31,
the gate insulation layer 32, the interlayer dielectric 33, the
passivation layer 34 and/or the pixel defining layer 35 of the
organic light-emitting display device 10 may be formed by using the
vapor deposition apparatus (see reference numeral 100 of FIG.
1).
[0090] Also, other various thin films such as the active layer 41,
the gate electrode 42, the source and drain electrodes 43, the
first electrode 61, the intermediate layer 63 and/or the second
electrode 62 may also be formed by using the vapor deposition
apparatus (see reference numeral 100 of FIG. 1).
[0091] As described above, when the vapor deposition apparatus (see
reference numeral 100 of FIG. 1) is utilized, properties of the
deposition films formed in the organic light-emitting display
device 10 may be improved to improve electrical and image quality
properties of the organic light-emitting display device 10.
[0092] One or more exemplary embodiment of the vapor deposition
apparatus according to the invention may have an improved
deposition efficiency.
[0093] Accordingly, a person having ordinary skill in the art will
understand from the above that various modifications and other
equivalent embodiments are also possible.
* * * * *