U.S. patent application number 14/572368 was filed with the patent office on 2015-04-09 for dielectric composition and multilater ceramic electronic component manufactured using the same.
This patent application is currently assigned to SAMSUNG ELECTRO-MECHANICS CO., LTD.. The applicant listed for this patent is SAMSUNG ELECTRO-MECHANICS CO., LTD.. Invention is credited to Chang Hak Choi, Sung Hyung Kang, Doo Young Kim.
Application Number | 20150098166 14/572368 |
Document ID | / |
Family ID | 50384962 |
Filed Date | 2015-04-09 |
United States Patent
Application |
20150098166 |
Kind Code |
A1 |
Kang; Sung Hyung ; et
al. |
April 9, 2015 |
DIELECTRIC COMPOSITION AND MULTILATER CERAMIC ELECTRONIC COMPONENT
MANUFACTURED USING THE SAME
Abstract
There are provided a dielectric composition and a multilayer
ceramic electronic component manufactured using the same, the
dielectric composition including a dielectric grain having a
perovskite structure represented by ABO.sub.3, wherein, when an
imaginary line is drawn in a direction from a center of the
dielectric grain to a grain boundary thereof, a content of rare
earth elements in a region corresponding to 0.75 to 0.95% of the
dielectric grain from the center of the dielectric grain may be 0.5
to 2.5 at %, based on 100 at % of a B-site ion, so that the
multilayer ceramic electronic component manufactured using the
dielectric composition can have excellent reliability and secure a
high dielectric constant.
Inventors: |
Kang; Sung Hyung; (Suwon,
KR) ; Kim; Doo Young; (Suwon, KR) ; Choi;
Chang Hak; (Suwon, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
Suwon |
|
KR |
|
|
Assignee: |
SAMSUNG ELECTRO-MECHANICS CO.,
LTD.
|
Family ID: |
50384962 |
Appl. No.: |
14/572368 |
Filed: |
December 16, 2014 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13842764 |
Mar 15, 2013 |
|
|
|
14572368 |
|
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Current U.S.
Class: |
361/301.4 ;
501/134; 501/139; 501/152 |
Current CPC
Class: |
C04B 2235/3227 20130101;
C04B 2235/3224 20130101; H01G 4/1227 20130101; C04B 2235/3289
20130101; H01G 4/008 20130101; C04B 2235/79 20130101; C04B
2235/3208 20130101; C04B 35/62815 20130101; C04B 35/4682 20130101;
C04B 2235/3225 20130101; C04B 2235/3236 20130101; H01G 4/1236
20130101; C04B 2235/3215 20130101; C04B 2235/3249 20130101; C04B
35/49 20130101; H01G 4/30 20130101; C04B 2235/3229 20130101 |
Class at
Publication: |
361/301.4 ;
501/152; 501/134; 501/139 |
International
Class: |
C04B 35/49 20060101
C04B035/49; H01G 4/12 20060101 H01G004/12; H01G 4/30 20060101
H01G004/30 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 28, 2012 |
KR |
10-2012-0108744 |
Claims
1. A dielectric composition, comprising a dielectric grain having a
perovskite structure represented by ABO.sub.3, wherein, when an
imaginary line is drawn in a direction from a center of the
dielectric grain to a grain boundary thereof, a content of rare
earth elements in the center of the dielectric grain is 0.05 to 2.0
at %, and a content of rare earth elements in the region
corresponding to 75 to 95% of the dielectric grain from the center
of the dielectric grain is 0.5 to 2.0 times that of the content of
rare earth elements in the center of the dielectric grain.
2. The dielectric composition of claim 1, wherein the A includes
one or more selected from a group consisting of barium (Ba),
strontium (Sr), lead (Pb), and calcium (Ca).
3. The dielectric composition of claim 1, wherein the B includes
one or more selected from a group consisting of titanium (Ti) and
zirconium (Zr).
4. The dielectric composition of claim 1, wherein the rare earth
elements include a trivalent ion.
5. The dielectric composition of claim 1, wherein the rare earth
elements include one or more selected from a group consisting of
scandium (Sc), yttrium (Y), lanthanum (La), actinium (Ac), cerium
(Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium
(Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium
(Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and
ruthenium (Ru).
6. The dielectric composition of claim 1, wherein the dielectric
grain includes one or more selected from a group consisting of
Ba.sub.mTiO.sub.3(0.995.ltoreq.m.ltoreq.1.010),
(Ba.sub.1-xCa.sub.x).sub.m(Ti.sub.1-yZr.sub.y)O.sub.3(0.995.ltoreq.m.ltor-
eq.1.010, 0.ltoreq.x.ltoreq.0.10, 0<y.ltoreq.0.20), and
Ba.sub.m(Ti.sub.1-xZr.sub.x)O.sub.3(0.995.ltoreq.m.ltoreq.1.010,
x.ltoreq.0.10); and Ba.sub.mTiO.sub.3(0.995.ltoreq.m.ltoreq.1.010),
(Ba.sub.1-xCa.sub.x).sub.m(Ti.sub.1-yZr.sub.y)O.sub.3(0.995.ltoreq.m.ltor-
eq.1.010, 0.ltoreq.x.ltoreq.0.10, 0<y.ltoreq.0.20), and
Ba.sub.m(Ti.sub.1-xZr.sub.x)O.sub.3 (0.995.ltoreq.m.ltoreq.1.010,
x.ltoreq.0.10), in which one or more rare earth elements are
partially dissolved.
7. A multilayer ceramic electronic component, comprising: a ceramic
body including dielectric layers each having an average thickness
of 0.48 .mu.m or less; and internal electrodes disposed to face
each other with the dielectric layer therebetween within the
ceramic body, wherein the dielectric layer includes a dielectric
composition, the dielectric composition including a dielectric
grain having a perovskite structure represented by ABO.sub.3, in
which, when an imaginary line is drawn in a direction from a center
of the dielectric grain to a grain boundary thereof, a content of
rare earth elements in the center of the dielectric grain is 0.05
to 2.0 at %, and a content of rare earth elements in the region
corresponding to 75 to 95% of the dielectric grain from the center
of the dielectric grain is 0.5 to 2.0 times that of the content of
rare earth elements in the center of the dielectric grain.
8. The multilayer ceramic electronic component of claim 7, the A
includes one or more selected from a group consisting of barium
(Ba), strontium (Sr), lead (Pb), and calcium (Ca).
9. The multilayer ceramic electronic component of claim 7, wherein
the B includes one or more selected from a group consisting of
titanium (Ti) and zirconium (Zr).
10. The multilayer ceramic electronic component of claim 7, wherein
the rare earth elements include a trivalent ion.
11. The multilayer ceramic electronic component of claim 7, wherein
the rare earth elements include one or more selected from a group
consisting of scandium (Sc), yttrium (Y), lanthanum (La), actinium
(Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium
(Pm), samarium (Sm), europium (Eu), gadolinium (Cd), terbium (Tb),
dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium
(Yb), and ruthenium (Ru).
12. The multilayer ceramic electronic component of claim 7, wherein
the dielectric grain includes one or more selected from a group
consisting of Ba.sub.mTiO.sub.3(0.995.ltoreq.m.ltoreq.1.010),
(Ba.sub.1-xCa.sub.x).sub.m(Ti.sub.1-yZr.sub.y)O.sub.3(0.995.ltoreq.m.ltor-
eq.1.010, 0.ltoreq.x.ltoreq.0.10, 0<y.ltoreq.0.20), and
Ba.sub.m(Ti.sub.1-xZr.sub.x)O.sub.3(0.995.ltoreq.m.ltoreq.1.010,
x.ltoreq.0.10); and Ba.sub.mTiO.sub.3(0.995.ltoreq.m.ltoreq.1.010),
(Ba.sub.1-xCa.sub.x).sub.m(Ti.sub.1-yZr.sub.y)O.sub.3(0.995.ltoreq.m.ltor-
eq.1.010, 0.ltoreq.x.ltoreq.0.10, 0<y.ltoreq.0.20), and
Ba.sub.m(Ti.sub.1-xZr.sub.x)O.sub.3 (0.995.ltoreq.m.ltoreq.1.010,
x.ltoreq.0.10), in which one or more rare earth elements are
partially dissolved.
13. The multilayer ceramic electronic component of claim 7, wherein
the dielectric layer has a dielectric constant of 4000 or greater.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. application Ser.
No. 13/842,764, filed Mar. 15, 2013, which claims the benefit under
35 U.S.C. .sctn.119(a) of Korean Patent Application No.
10-2012-0108744 filed on Sep. 28, 2012, in the Korean Intellectual
Property Office, the disclosure of which is incorporated herein by
reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a dielectric composition
having excellent dielectric properties and electrical properties
and a multilayer ceramic electronic component manufactured using
the same.
[0004] 2. Description of the Related Art
[0005] A perovskite powder, a ferroelectric ceramic material, has
been used as a raw material of electronic components, such as a
multilayer ceramic capacitor (MLCC), a ceramic filter, a
piezoelectric element, a ferroelectric memory, a thermistor, a
varistor, and the like.
[0006] Barium titanate (BaTiO.sub.3) is a high dielectric material
having a perovskite structure, and has been used as a dielectric
material for a multilayer ceramic capacitor.
[0007] Today, with the trend for slimness, compactness, high
capacitance, high reliability, and the like, in electronic
components, a ferroelectric particle is required to have a small
size as well as an excellent dielectric constant and
reliability.
[0008] If the particle diameter of a barium titanate powder, a main
component of a dielectric layer, is large, surface roughness of the
dielectric layer may be increased, and thus, a short circuit ratio
may be increased and insulation resistance may be defective.
[0009] For this reason, as a main component of the dielectric
layer, the barium titanate powder is required to be
finely-granulated.
[0010] However, as a barium titanate powder is finely granulated
and the dielectric layer of a multilayer ceramic electronic
component is thinner, a reduction in capacitance, short circuit
defects, reliability defects, and the like, may occur.
[0011] For this reason, the development of multilayer ceramic
electronic components securing a dielectric constant in a
dielectric layer and having excellent reliability is still in
demand.
RELATED ART DOCUMENT
[0012] (Patent Document 1) Japanese Patent Laid-Open Publication
No. 2008-239407
SUMMARY OF THE INVENTION
[0013] An aspect of the present invention provides a dielectric
composition having excellent dielectric properties and electrical
properties and a multilayer ceramic electronic component
manufactured using the same.
[0014] According to an aspect of the present invention, there is
provided a dielectric composition including: a dielectric grain
having a perovskite structure represented by ABO.sub.3 , wherein,
when an imaginary line is drawn in a direction from a center of the
dielectric grain to a grain boundary thereof, a content of rare
earth elements in a region corresponding to 75to95% of the
dielectric grain from the center of the dielectric grain may be 0.5
to 2.5 at %, based on 100 at % of a B-site ion.
[0015] The content of rare earth elements in the region
corresponding to 75 to 95% of the dielectric grain from the center
of the dielectric grain may be 0.05 to 2.0 times a content of rare
earth elements in the center of the dielectric grain.
[0016] Here, the A may include one or more selected from a group
consisting of barium (Ba), strontium (Sr), lead (Pb), and calcium
(Ca).
[0017] Here, the B may include one or more selected from a group
consisting of titanium (Ti) and zirconium (Zr).
[0018] The rare earth elements may include a trivalent ion.
[0019] The rare earth elements may include one or more selected
from a group consisting of scandium (Sc), yttrium (Y), lanthanum
(La), actinium (Ac), cerium (Ce) praseodymium (Pr), neodymium (Nd),
promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd),
terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium
(Tm), ytterbium (Yb), and ruthenium (Ru).
[0020] The dielectric grain may include one or more selected from a
group consisting of Ba.sub.mTiO.sub.3
(0.995.ltoreq.m.ltoreq.1.010),
(Ba.sub.1-xCa.sub.x).sub.m(Ti.sub.1-yZr.sub.y)O.sub.3
(0.995.ltoreq.m.ltoreq.1.010, 0.ltoreq.x.ltoreq.1.10,
0.ltoreq.y.ltoreq.0.20), and
Ba.sub.m(Ti.sub.1-xZr.sub.x)O.sub.3(0.995.ltoreq.m.ltoreq.1.010,
x.ltoreq.0.10); and Ba.sub.mTiO.sub.3
(0.995.ltoreq.m.ltoreq.1.010),
(Ba.sub.1-xCa.sub.x).sub.m(Ti.sub.1-yZr.sub.y)O.sub.3
(0.995.ltoreq.m.ltoreq.1.010, 0.ltoreq.x.ltoreq.0.10,
0<y.ltoreq.0.20), and Ba.sub.m(Ti.sub.1-xZr.sub.x)O.sub.3
(0.995.ltoreq.m.ltoreq.1.010, x.ltoreq.0.10), in which one or more
rare earth elements are partially dissolved.
[0021] According to another aspect of the present invention, there
is provided a multilayer ceramic electronic component, including: a
ceramic body including dielectric layers each having an average
thickness of 0.48 .mu.m or less; and internal electrodes disposed
to face each other with the dielectric layer therebetween within
the ceramic body, wherein the dielectric layer includes a
dielectric composition, the dielectric composition including a
dielectric grain having a perovskite structure represented by
ABO.sub.3, in which, when an imaginary line is drawn in a direction
from a center of the dielectric grain to a grain boundary thereof,
a content of rare earth elements in a region corresponding to 75 to
95% of the dielectric grain from the center of the dielectric grain
is 0.5 to 2.5 at %, based on 100 at % of a B-site ion.
[0022] The content of rare earth elements in the region
corresponding to 75 to 95% of the dielectric grain from the center
of the dielectric grain may be 0.05 to 2.0 times a content of rare
earth elements in the center of the dielectric grain.
[0023] Here, the A may include one or more selected from a group
consisting of barium (Ba), strontium (Sr), lead (Pb), and calcium
(Ca).
[0024] Here, the B may include one or more selected from a group
consisting of titanium (Ti) and zirconium (Zr).
[0025] The rare earth elements may include a trivalent ion.
[0026] The rare earth elements may include one or more selected
from a group consisting of scandium (Sc), yttrium (Y), lanthanum
(La), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium
(Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium
(Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er),
thulium (Tm), ytterbium (Yb), and ruthenium (Ru).
[0027] The dielectric layer may have a dielectric constant of 4000
or greater.
BRIEF DESCRIPTION OF THE DRAWINGS
[0028] The above and other aspects, features and other advantages
of the present invention will be more clearly understood from the
following detailed description taken in conjunction with the
accompanying drawings, in which:
[0029] FIG. 1 is a schematic view showing a core-shell structure of
a dielectric grain according to an embodiment of the present
invention;
[0030] FIG. 2 is an enlarged view of area S of FIG. 1;
[0031] FIG. 3 is a perspective view schematically showing a
multilayer ceramic capacitor according to an embodiment of the
present invention; and
[0032] FIG. 4 is a cross-sectional view taken along line B-B' of
FIG. 3.
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0033] Hereinafter, embodiments of the present invention will be
described in detail with reference to the accompanying drawings.
The invention may, however, be embodied in many different forms and
should not be construed as being limited to the embodiments set
forth herein. Rather, these embodiments are provided so that this
disclosure will be thorough and complete, and will fully convey the
scope of the invention to those skilled in the art. In the
drawings, the shapes and dimensions of elements may be exaggerated
for clarity, and the same reference numerals will be used
throughout to designate the same or like elements.
[0034] FIG. 1 is a schematic view showing a core-shell structure of
a dielectric grain, according to an embodiment of the present
invention.
[0035] FIG. 2 is an enlarged view of area S of FIG. 1.
[0036] Referring to FIGS. 1 and 2, a dielectric composition
according to an embodiment of the present invention may include a
dielectric grain 10 having a perovskite structure represented by
ABO.sub.3. Here, when an imaginary line is drawn in a direction
from a center C of the dielectric grain 10 to a grain boundary b
thereof, the content of rare earth elements in a region
corresponding to 75 to 95% of the dielectric grain 10 from the
center C thereof may be 0.5 to 2.5 at %, based on 100 at % of a
B-site ion.
[0037] Hereinafter, the dielectric composition according to the
embodiment of the present invention will be described in
detail.
[0038] According to the embodiment of the present invention, the
dielectric composition may include the dielectric grain 10 having a
perovskite structure represented by ABO.sub.3.
[0039] In addition, the A may include one or more selected from the
group consisting of barium (Ba), strontium (Sr), lead (Pb), and
calcium (Ca), but is not limited thereto.
[0040] As the B, any material that can be situated in site B in the
perovskite structure may be used, but is not particularly limited
thereto, and examples thereof may include one or more selected from
the group consisting of titanium (Ti) and zirconium (Zr).
[0041] The dielectric grain may include one or more selected from
the group consisting of Ba.sub.mTiO.sub.3
(0.995.ltoreq.m.ltoreq.1.010),
(Ba.sub.1-xCa.sub.x).sub.m(Ti.sub.1-yZr.sub.y)O.sub.3
(0.995.ltoreq.m.ltoreq.1.010, 0.ltoreq.x.ltoreq.0.10,
0<y.ltoreq.0.20), and
Ba.sub.m(Ti.sub.1-xZr.sub.x)O.sub.3(0.995.ltoreq.m.ltoreq.1.010,
x.ltoreq.0.10); and Ba.sub.mTiO.sub.3(0.995.ltoreq.m.ltoreq.1.010),
(Ba.sub.1-xCa.sub.x).sub.m(Ti.sub.1-yZr.sub.y)O.sub.3
(0.995.ltoreq.m.ltoreq.1.010, 0.ltoreq.x.ltoreq.0.10,
0<y.ltoreq.0.20), and Ba.sub.m(Ti.sub.1-xZr.sub.x)O.sub.3
(0.995.ltoreq.m.ltoreq.1.010, x.ltoreq.0.10), in which one or more
rare earth elements are partially dissolved, but is not limited
thereto.
[0042] Generally, as the dielectric grain included in the
dielectric composition is finely-granulated and a dielectric layer
of a multilayer ceramic electronic component manufactured using the
dielectric grain has a reduced thickness, short circuit defects,
reliability defects, and the like, may occur.
[0043] Moreover, it is difficult to perform dispersion at the time
of preparing slurry using a fine-granulated dielectric powder,
which may cause reliability degradation in the multilayer ceramic
electronic component manufactured by using the dielectric
composition.
[0044] In order to overcome deterioration in reliability, a
dielectric grain having rare earth elements completely dissolved
therein and a perovskite structure oxide as a base material may be
preferably used.
[0045] That is, in order to solve short circuit defects,
reliability defects, and the like, due to the dielectric layer of
the multi layer ceramic electronic component having a reduced
thickness, it is necessary to control the content of rare earth
elements in the dielectric grain having a perovskite structure.
[0046] According to the embodiment of the present invention, when
an imaginary line is drawn in a direction from the center C of the
dielectric grain 10 to the grain boundary b thereof, the content of
rare earth elements in a region corresponding to 75 to 95% of the
dielectric grain 10 from the center C thereof may be 0.5 to 2.5 at
%, based on 100 at % of the B-site ion.
[0047] The dielectric grain 10 may include a core 1 and a shell 2
and have a core-shell structure.
[0048] The content of rare earth elements may be a content thereof
in a region corresponding to 75 to 95% of the dielectric grain 10
from the center C of the dielectric grain 10 when an imaginary line
is drawn in the direction from the center C of the dielectric grain
10 to the grain boundary b thereof.
[0049] FIG. 1 shows a region corresponding to 75 to 95% of the
dielectric grain 10 from the center C of the dielectric grain 10
when an imaginary line is drawn in the direction from the center C
of the dielectric grain 10 to the grain boundary b thereof.
[0050] The imaginary line drawn in the direction from the center C
of the dielectric grain 10 to the grain boundary b thereof is not
particularly limited thereto, and for example, the imaginary line
may be drawn from the center C of the dielectric grain 10 to the
grain boundary b thereof in which the shell is thickest.
[0051] By controlling the content of rare earth elements to satisfy
0.5 to 2.5 at %, based on 100 at % of the B-site ion, short circuit
defects, reliability defects, and the like, of the multilayer
ceramic electronic component manufactured by using the dielectric
composition including the dielectric grain can be solved.
[0052] If the content of rare earth elements is below 0.5 at %,
based on 100 at % of the B-site ion, the dielectric grain 10 has a
core-shell structure the same as a core-shell structure of a
dielectric grain according to the related art, which may be
ineffective in improvements in reliability.
[0053] Meanwhile, if the content of rare earth elements is above
2.5 at %, based on 100 at % of the B-site ion, a desired high
dielectric constant may not be obtained.
[0054] According to the embodiment of the present invention, the
content of rare earth elements in the region corresponding to 75 to
95% of the dielectric grain 10 from the center C thereof may be
0.05 to 2.0 times the content of rare earth elements in the center
C of the dielectric grain 10.
[0055] The content of rare earth elements in the region
corresponding to 75 to 95% of the dielectric grain 10 from the
center C thereof is controlled to be 0.05 to 2.0 times the content
of rare earth elements in the center C of the dielectric grain 10,
whereby the multilayer ceramic electronic component manufactured
using the dielectric grain 10 may secure a high dielectric constant
and improved reliability.
[0056] If the content of rare earth elements in the region
corresponding to 75 to 95% of the dielectric grain 10 from the
center C thereof is less than 0.05 times the content of rare earth
elements in the center C of the dielectric grain 10, improvements
in reliability may not be obtained.
[0057] If the content of rare earth elements in the region
corresponding to 75 to 95% of the dielectric grain 10 from the
center C thereof is more than 2.0 times the content of rare earth
elements in the center C of the dielectric grain 10, a desired high
dielectric constant may not be obtained.
[0058] The content of rare earth elements in the center C of the
dielectric grain is not particularly limited, and may be for
example 0.05 to 2.0 at %, based on 100 at % of the B-site ion.
[0059] The rare earth elements may include a trivalent ion, but is
not limited thereto.
[0060] The rare earth elements may not be particularly limited, and
may include one or more selected from the group consisting of
scandium (Sc), yttrium (Y), lanthanum (La), actinium (Ac), cerium
(Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium
(Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium
(Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and
ruthenium (Ru), for example.
[0061] The dielectric grain of the dielectric composition according
to the embodiment of the present invention may be produced by the
following method.
[0062] The perovskite powder is powder having a structure of
ABO.sub.3. In the embodiment of the present invention, a metal
oxide is an element source corresponding to site B and a metal salt
is an element source corresponding to site A.
[0063] First, a perovskite particle nucleus may be formed by mixing
the metal salt and the metal oxide.
[0064] The metal oxide may be one or more selected from the group
consisting of titanium (Ti) and zirconium (Zr).
[0065] Titania and zirconia are very easily hydrolysable, and thus,
if they are mixed with pure water without additional additive,
hydrous titanium or hydrous zirconium may be precipitated in a gel
form.
[0066] The hydrous metal oxide may be washed to remove impurities
therefrom.
[0067] More specifically, the hydrous metal oxide is filtered by
pressure, to remove a residual solution, and then filtered while
being washed with pure water, to remove impurities present on a
particle surface.
[0068] Next, pure water and acid or a base may be added to the
hydrous metal oxide.
[0069] The pure water may be put into hydrous me al oxide powder
obtained after filtering, and then the mixture was stirred by a
high-viscosity stirrer at a temperature of 0.degree. C. to
60.degree. C. for 0.1 to 72 hours, thereby preparing a hydrous
metal oxide slurry.
[0070] Acid or abase maybe added to the prepared slurry. Here, the
acid or base may be used as a peptizing agent, and may be added in
0.00001 to 0.2 moles, based on the content of hydrous metal
oxide.
[0071] The acid is not particularly limited as long as it is
commonly used, and examples thereof may include hydrochloric acid,
nitric acid, sulfuric acid, phosphoric acid, formic acid, acetic
acid, polycarboxylic acid, and the like, which may be used alone or
in combination of at least two thereof.
[0072] The base is not particularly limited as long as it is
commonly used, and examples thereof may include tetramethyl
ammonium hydroxide, tetra ethyl ammonium hydroxide, and the like,
which may be used alone or in combination of at least two
thereof.
[0073] The metal salt may be barium hydroxide or a combination of a
rare earth salt and barium hydroxide.
[0074] The rare earth salt may be scandium (Sc), yttrium (Y),
lanthanum (La), actinium (Ac), cerium (Ce), praseodymium (Pr),
neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu),
gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho),
erbium (Er), thulium (Tm), ytterbium (Yb), ruthenium (Ru) or the
like, but are not limited thereto.
[0075] The forming of the perovskite particle nucleus may performed
at 60.degree. C. to 150.degree. C.
[0076] Next, the perovskite particle nucleus is input into a
hydrothermal reactor and subjected to hydrothermal treatment, such
that the perovskite particle nucleus may be grown in the
hydrothermal reactor.
[0077] Next, an aqueous metal salt solution is inputted into the
hydrothermal reactor by using a high-pressure pump, to prepare a
mixture liquid. The mixture liquid is heated to obtain a dielectric
grain having a perovskite structure represented by ABO.sub.3.
[0078] The aqueous metal salt solution is not particularly limited,
and may be, for example, one or more selected from the group
consisting of nitrate and acetate.
[0079] FIG. 3 is a perspective view schematically showing a
multilayer ceramic capacitor according to an embodiment of the
present invention.
[0080] FIG. 4 is a cross-sectional view taken along line B-B' of
FIG. 3.
[0081] Referring to FIGS. 3 and 4, a multilayer ceramic electronic
component according to an embodiment of the present invention may
include: a ceramic body 110 including dielectric layers 11 each
having an average thickness of 0.48 .mu.m or less; and internal
electrodes 21 and 22 disposed to face each other with the
dielectric layer 11 therebetween within the ceramic body 110. Here,
the dielectric layer 11 may include the dielectric composition, the
dielectric composition including the dielectric grain 10 having a
perovskite structure represented by ABO.sub.3, in which when an
imaginary line is drawn in a direction from the center C of the
dielectric grain 10 to the grain boundary b thereof, the content of
rare earth elements in a region corresponding to 75 to 95% of the
dielectric grain 10 from the center C thereof may be 0.5 to 2.5 at
%, based on 100 at % of the B-site ion.
[0082] Hereinafter, the multilayer ceramic electronic component
according to the embodiment of the present invention, particularly,
the multilayer ceramic capacitor, will be described, but the
present invention is not limited thereto.
[0083] In the multilayer ceramic capacitor according to the
embodiment of the present invention, "length direction", "width
direction" , and "thickness direction" will be defined as the `L`
direction, the `W` direction, and the `T` direction, of FIG. 3.
Here, the `thickness direction` may be used to have the same
concept as a direction in which dielectric layers are laminated,
that is, a `lamination direction`.
[0084] According to the embodiment of the present invention, a raw
material for forming the dielectric layer 11 is not particularly
limited as long as sufficient capacitance can be obtained thereby.
For example, the raw material maybe a barium titanate (BaTiO.sub.3)
powder.
[0085] The multi layer ceramic capacitor manufactured by using the
barium titanate (BaTiO.sub.3) powder has a high room-temperature
dielectric constant and excellent insulation resistance and
withstand voltage characteristics, and thus, reliability thereof
can be improved.
[0086] The multilayer ceramic capacitor according to the embodiment
of the present invention may include the dielectric grain in which
when an imaginary line is drawn in a direction from the center C of
the dielectric grain to the grain boundary b thereof, the content
of rare earth elements in a region corresponding to 75 to 95% of
the dielectric grain from the center C thereof may be 0.5 to 2.5 at
%, based on 100 at % of the B-site ion, such that the multilayer
ceramic capacitor has a high room-temperature dielectric constant
and excellent insulation resistance and withstand voltage
characteristics, and thus, reliability thereof can be improved.
[0087] As a material for forming the dielectric layer 11, various
ceramic additives, organic solvents, plasticizers, binders,
dispersants, or the like may be added to powder, such as the barium
titanate (BaTiO.sub.3) powder, depending on the objects of the
present invention.
[0088] The average thickness of the dielectric layer 11 may be, but
is not particularly limited to, for example, 0.48 .mu.m or
less.
[0089] The dielectric composition according to the embodiment of
the present invention has better effects when the average thickness
of the dielectric layer 11 is 0.48 .mu.m or less. That is, the
multilayer ceramic capacitor manufactured by using the dielectric
composition has excellent reliability when the average thickness of
the dielectric layer is 0.48 .mu.m or less.
[0090] The dielectric constant of the dielectric layer 11 may be,
but is not particularly limited to, for example, 4000 or
greater.
[0091] The other features of the present embodiment overlap the
features of the dielectric grain according to the aforementioned
embodiment of the present invention, and thus, descriptions thereof
will be omitted.
[0092] A material for forming the first and second internal
electrodes 21 and 22 is not particularly limited. For example, they
may be formed by using a conductive paste made of one or more of
silver (Ag), lead (Pb), platinum (Pt), nickel (Ni) and copper
(Cu).
[0093] The multilayer ceramic capacitor according to the embodiment
of the present invention may further include a first external
electrode 31 electrically connected to the first internal electrode
21 and a second external electrode 32 electrically connected to the
second internal electrode 22.
[0094] The first and second external electrodes 31 and 32 may be
electrically connected to the respective first and second internal
electrodes 21 and 22 so as to form capacitance, and the second
external electrode 32 maybe connected to a potential different from
that of the first external electrode 31.
[0095] A material for forming the first and second external
electrodes 31 and 32 is not particularly limited as long as the
first and second external electrodes 31 and 32 can be electrically
connected to the first and second internal electrodes 21 and 22 so
as to form capacitance, and may include one or more selected from
the group consisting of copper (Cu), nickel (Ni), silver (Ag), and
silver-palladium (Ag--Pd).
[0096] Hereafter, the present invention will be described in detail
with reference to examples, but is not limited thereto.
[0097] Examples of the present invention were manufactured by using
a dielectric composition including a dielectric grain having a
perovskite structure represented by ABO.sub.3, in which, when an
imaginary line is drawn in a direction from a center of the
dielectric grain to a grain boundary thereof, a content of rare
earth elements in a region corresponding to 75 to 95% of the
dielectric grain from the center thereof may be 0.5 to 2.5 at %,
based on 100 at % of a B-site ion.
[0098] Comparative Examples were manufactured by preparing a
dielectric composition including a dielectric grain having the same
composition as that of the examples of the present invention,
except that numeral ranges were outside of the foregoing numeral
ranges of the present invention.
[0099] Table 1 below shows results in which capacitance and
dielectric loss were compared according to the content of rare
earth elements in a different position of the dielectric grain.
[0100] The capacitance and the dielectric loss were measured at 1
kHz and 0.5V by using an LCR meter, after the dielectric
composition was heated and then one hour had elapsed. Reliability
evaluation was performed by counting the number of defective
samples among 40 samples under the conditions of 130.degree. C.,
8V, and 4 hours.
[0101] Capacitances of the samples were measured, and the samples
were determined to be good or bad, based on 2.68 as a minimum
capacitance.
TABLE-US-00001 TABLE 1 Content of Rare Earth Elements in Different
Reliability Position Of Dielectric Grain Evaluation Center of
Region Corresponding to 0.75 to 0.95% (Number Grain (c) from Center
of Dielectric Grain of Rare Rare Times that of a content of
Defective Earth Content Earth rare earth elements in the Products/
Elements (at %) Elements Center of Grain (c) Capacitance 40 ea) 1
Dy 0.05 Dy 1.2 3.10 19 2* Dy 0.02 Dy, Y 0.4 3.33 34 3 Dy 0.2 Dy 0.5
3.22 18 4 Dy 0.4 Dy, Ho 2.5 2.76 10 5 Dy 0.8 Dy, Y 2.3 2.78 7 6 Dy
1.5 Dy, Y 2.0 2.70 5 7 Dy 2.0 Dy 1.0 2.71 6 8* Dy 2.5 Dy, Y 2.7
1.92 2 9 Y 0.1 Dy, Y 0.5 3.00 18 10 Y 1.0 Dy, Y 1.2 2.85 8 11* Y
2.1 Dy, Y 0.4 2.43 26 12 Y 0.6 Y, Ho 1.1 2.76 13 13 Y 1.8 Y 1.0
2.68 15 14 Y 0.05 Y 1.5 2.79 19 15* Ho 0.0 Ho 2.0 2.98 28 16 Ho 1.0
Dy 1.0 2.90 13 17* Ho 2.2 Ho 1.0 2.33 14 *: Comparative Example
[0102] It can be seen from Table 1 above that each of Samples 1, 3
to 7, 9, 10, 12 to 14, and 16 was a multilayer ceramic capacitor
manufactured by using the dielectric grain satisfying the numeral
range of the present invention, and capacitance thereof was high
and reliability thereof was excellent.
[0103] Whereas, it can be seen that each of Samples 2, 8, 11, 15,
and 17 was outside of the numeral range of the present invention,
and had defects in capacitance or reliability, or both capacitance
and reliability.
[0104] Resultantly, the multilayer ceramic capacitor according to
the embodiment of the present invention was manufactured by using a
dielectric composition including a dielectric grain having a
perovskite structure represented by ABO.sub.3, in which, when an
imaginary line is drawn in a direction from a center of the
dielectric grain to a grain boundary thereof, rare earth elements
in a region corresponding to 75 to 95% of the dielectric grain from
the center thereof has a content of 0.5 to 2.5 at %, based on 100
at % of a B-site ion, and thus had a high room-temperature
dielectric constant, high capacitance and excellent
reliability.
[0105] As set forth above, according to the embodiments of the
present invention, the multilayer ceramic electronic component
manufactured using the dielectric composition can have to excellent
reliability and secure a high dielectric constant.
[0106] While the present invention has been shown and described in
connection with the embodiments, it will be apparent to those
skilled in the art that modifications and variations can be made
without departing from the spirit and scope of the invention as
defined by the appended claims.
* * * * *