U.S. patent application number 14/330045 was filed with the patent office on 2015-03-26 for power module.
The applicant listed for this patent is Delta Electronics (Shanghai) Co., Ltd.. Invention is credited to Shou-Yu HONG, Jian-Hong ZENG, Zhen-Qing ZHAO, Gan-Yu ZHOU.
Application Number | 20150085454 14/330045 |
Document ID | / |
Family ID | 52690755 |
Filed Date | 2015-03-26 |
United States Patent
Application |
20150085454 |
Kind Code |
A1 |
HONG; Shou-Yu ; et
al. |
March 26, 2015 |
POWER MODULE
Abstract
A power module is disclosed. The power module includes a first
substrate, a first metal layer, at least one conductive structure
and at least one power device. The first metal layer is disposed on
the first substrate. The first metal layer has a first thickness
d1. The first thickness d1 satisfies: 5 .mu.m.ltoreq.d1.ltoreq.50
.mu.m. The conductive structure is disposed at a position different
to the first metal layer on the first substrate. The conductive
structure has a second thickness d2. The second thickness d2
satisfies: d2.gtoreq.100 .mu.m. The power device is disposed on the
first substrate, the first metal layer or the conductive structure.
The driving electrode of the power device is electrically connected
to the first metal layer. The power electrode of the power device
is electrically coupled to the conductive structure.
Inventors: |
HONG; Shou-Yu; (Shanghai,
CN) ; ZHOU; Gan-Yu; (Shanghai, CN) ; ZENG;
Jian-Hong; (Shanghai, CN) ; ZHAO; Zhen-Qing;
(Shanghai, CN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Delta Electronics (Shanghai) Co., Ltd. |
Shanghai |
|
CN |
|
|
Family ID: |
52690755 |
Appl. No.: |
14/330045 |
Filed: |
July 14, 2014 |
Current U.S.
Class: |
361/761 ;
361/760 |
Current CPC
Class: |
H01L 2924/13055
20130101; H05K 1/0265 20130101; H01L 23/49833 20130101; H01L
2924/13055 20130101; H01L 2924/181 20130101; H01L 2224/48091
20130101; H01L 2224/73265 20130101; H01L 23/49537 20130101; H01L
23/4334 20130101; H01L 23/36 20130101; H01L 2924/13091 20130101;
H01L 2224/48091 20130101; H01L 25/072 20130101; H01L 23/49568
20130101; H01L 2224/48137 20130101; H05K 2201/10166 20130101; H01L
23/49575 20130101; H01L 2924/13091 20130101; H01L 23/49811
20130101; H01L 2924/181 20130101; H01L 23/49562 20130101; H01L
2924/00 20130101; H01L 2924/00 20130101; H01L 2924/00012 20130101;
H01L 2924/00014 20130101; H01L 23/3735 20130101 |
Class at
Publication: |
361/761 ;
361/760 |
International
Class: |
H05K 1/02 20060101
H05K001/02; H05K 1/11 20060101 H05K001/11; H05K 1/18 20060101
H05K001/18 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 23, 2013 |
CN |
201310435466.X |
Claims
1. A power module, comprising: a first substrate; a first metal
layer, disposed on the first substrate, the first metal layer
having a first thickness d1, wherein the first thickness d1
satisfies: 5 .mu.m.ltoreq.d1.ltoreq.50 .mu.m; at least one
conductive structure, disposed at a position different to the first
metal layer on the first substrate, the conductive structure having
a second thickness d2, wherein the second thickness d2 satisfies:
d2.gtoreq.100 .mu.m; and at least one power device, disposed on the
first substrate, the first metal layer or the conductive structure,
wherein a driving electrode of the power device is electrically
coupled to the first metal layer, and at least one power electrode
of the power device is electrically coupled to the conductive
structure.
2. The power module of claim 1, further comprising: a plurality of
flattening structures, disposed on a surface, which is opposite to
the first substrate, of the first metal layer.
3. The power module of claim 1, further comprising: a bonding
structure, disposed between the power device and the conductive
structure.
4. The power module of claim 1, further comprising: at least one
adhesive structure, disposed between the conductive structure and
the first substrate.
5. The power module of claim 3, wherein the bonding structure is a
solder, a conductive adhesive, a conductive paste or a sintering
paste.
6. The power module of claim 1, further comprising: a second metal
layer, disposed between the first substrate and the conductive
structure, wherein the second metal layer has the same to thickness
as the first metal layer.
7. The power module of claim 1, further comprising: at least one
controlling component or a driving component, disposed on the first
metal layer or on the first substrate, wherein an output electrode
of the controlling component or the driving component is
electrically coupled to the driving electrode of the power
device.
8. The power module of claim 7, further comprising: a passive
component, disposed on the first substrate and/or the first metal
layer.
9. The power module of claim 8, wherein the passive component is a
capacitor, a resistor, a diode or an inductor.
10. The power module of claim 8, wherein the passive component is
formed by printing a paste of the passive component to the first
substrate and/or the first metal layer.
11. The power module of claim 8, further comprising: at least one
circuit board, disposed on the first metal layer, wherein the
controlling component, the driving component or the passive
component is disposed on the circuit board.
12. The power module of claim 1, further comprising: a sealing
body, covering at least the first metal layer, a part of the
conductive structure and the power device, wherein the conductive
structure comprises a locking structure, and the sealing body is
fixed by the locking structure.
13. The power module of claim 12, wherein the locking structure is
a notch, a protrusion or a cavity.
14. The power module of claim 1, further comprising: a third metal
layer, wherein the first substrate comprises a top side and a
bottom side which are relative to each other, the first metal layer
is disposed on the top side of the first substrate and the third
metal layer is disposed on the bottom side of the first
substrate.
15. The power module of claim 14, further comprising: a heat
dissipation structure, disposed below the third metal layer.
16. The power module of claim 1, further comprising: a heat
dissipation structure, disposed below the first substrate.
17. The power module of claim 1, further comprising: a sealing
body, covering at least the first metal layer, a part of the
conductive structure and the power device, wherein the sealed body
comprises an upper surface and a bottom surface which are relative
to each other.
18. The power module of claim 17, further comprising: a second
substrate, wherein the first substrate is separated from the second
substrate, the first substrate is closer to the bottom surface and
the second substrate is closer to the upper surface.
19. The power module of claim 18, further comprising: a fourth
metal layer, wherein the second substrate comprises a front side
and a bottom side which are relative to each other, the front side
of the second substrate is closer to the first substrate than the
bottom side of the second substrate, and the fourth metal layer is
disposed on the front side of the second substrate.
20. The power module of claim 19, further comprising: a connector,
electrically connected to one of the first metal layer and the
conductive structure and the fourth metal layer.
21. The power module of claim 18, further comprising: a fifth metal
layer, wherein the second substrate comprises a front side and a
bottom side which are relative to each other, the front side of the
second metal layer is closer to the first substrate than the bottom
side of the second substrate, and the fifth metal layer is disposed
on the bottom side of the second substrate.
22. The power module of claim 17, further comprising: a metal
conductive layer, disposed on a surface of the sealing body.
23. The power module of claim 1, wherein the first substrate
comprises a plurality of sub-substrates, and the plurality of
sub-substrates are separated from each other.
24. The power module of claim 1, further comprising: a case,
comprising an accommodating space; and a sealing paste, disposed
within the accommodating space, wherein the sealing paste covers at
least the first metal layer, a part of the conductive structure,
and the power device.
25. The power module of claim 24, further comprising: a heat
dissipation structure, disposed below the first substrate and the
first substrate is disposed within the accommodating space.
26. The power module of claim 25, further comprising: a third metal
layer, disposed between the first substrate and the heat
dissipation structure, wherein the third metal layer is disposed
within the accommodating space.
27. The power module of claim 1, further comprising: a plurality of
metal layout layers and a plurality of insulating layers, printed
on the first substrate in an interlaced manner, wherein the
plurality of metal layout layers are electrically connected to each
other.
28. A power module, comprising: a first substrate; a first metal
layer, disposed on the first substrate, the first metal layer
having a first thickness d1, wherein the first thickness d1
satisfies: 5 .mu.m.ltoreq.d1.ltoreq.50 .mu.m; at least one
conductive structure, disposed at a position different to the first
metal layer on the first substrate, the conductive structure having
a second thickness d2, wherein the second thickness d2 satisfies:
d2.gtoreq.100 .mu.m; a driving component, disposed on the first
substrate or the first metal layer; and at least one power device,
disposed on the first substrate, the first metal layer or the
conductive structure, wherein a driving electrode of the power
device is electrically coupled to the driving component, and at
least one power electrode of the power device is electrically
coupled to the conductive structure.
29. The power module of claim 28, further comprising: a circuit
board, disposed on the first metal layer, and the driving component
is disposed on the circuit board.
30. The power module of claim 29, further comprising: at least one
passive component, disposed on the first substrate, the first metal
layer or the circuit board, wherein the passive component is
electrically connected to the driving component.
Description
RELATED APPLICATIONS
[0001] This application claims priority to China Application Serial
Number 201310435466.X, filed Sep. 23, 2013, which is herein
incorporated by reference.
BACKGROUND
[0002] 1. Technical Field
[0003] Embodiments of the present invention relate to a power
module. More particularly, embodiments of the present invention
relate to a power module for a power converter.
[0004] 2. Description of Related Art
[0005] A semiconductor power device is an indispensable part in a
conventional power converter. Power density of a power device
corresponds to an output power of the power module per unit volume.
For the same output power, the higher the power density, the
smaller the power module, so less space is occupied. Therefore,
having a high power density has always been an industrial
requirement for power modules. To increase the power density of a
power device, an integrated power module (IPM) is developed. The
IPM integrates a number of semiconductor devices into a package, so
high output power can be achieved with a small volume, ultimately
increasing the power density.
[0006] Most of the current IPMs utilize direct bonded cooper (DBC)
substrates. During the manufacturing process of such substrate, a
high-temperature sintering process is applied to a ceramic tile and
a sheet of copper. A copper layer formed by the sintering process
can then be etched to form conductive tracks. However the
high-temperature sintering process requires high energy consumption
and therefore does not meet the trend of energy-saving. Further,
the power module has a high requirement for flow capacity, so the
copper layer of the DBC substrate generally requires being thicker
than 0.1 millimeters (mm). However, as the copper layer gets
thicker, the copper layer needs to be eroded deeper for etching.
Due to etching's isotropic characteristics, a lateral etching of
the copper layer becomes wider as the copper layer is being eroded
deeper. Through such operation, widths of the conductive tracks and
gaps between the conductive tracks are increased, meaning the
widths of the conductive tracks and the gaps between the conductive
tracks are constrained to a certain degree. Consequently the layout
area of the electrical circuit per unit volume is decreased. On the
other hand, in situations where an even higher current carrying
capacity is desired, a thicker copper layer, such as one having a
thickness of 0.5 mm, is usually required. However, such thickness
is difficult to achieve, due to the coefficient of thermal
expansion (CTE) of the high-temperature sintering process for DCB
substrates. As a result, the output power of the power module per
unit volume is reduced, thereby causing the power density of the
power module to drop.
SUMMARY
[0007] The present invention provides a power module. The power
module comprises a first substrate, a first metal layer, at least
one conductive structure, at least one power device. The first
metal layer is disposed on the first substrate. The first metal
layer has a first thickness d1. The first thickness d1 satisfies: 5
.mu.m.ltoreq.d1.ltoreq.50 .mu.m. The at least one conductive
structure is disposed at a position different to the first metal
layer on the first substrate. The conductive structure has a second
thickness d2. The second thickness d2 satisfies: d2.gtoreq.100
.mu.m. The at least one power device is disposed on the first
substrate, the first metal layer or the conductive structure. The
driving electrode of the power device is electrically coupled to
the first metal layer, and at least one power electrode of the
power device is electrically coupled to the conductive
structure.
[0008] An aspect of the present invention provides a power module.
The power module comprises a first substrate, a first metal layer,
at least a conductive structure, a driving component and at least a
power device. The first metal layer is disposed on the first
substrate. The first metal layer has a first thickness d1. The
first thickness d1 satisfies: 5 .mu.m.ltoreq.d1.ltoreq.50 .mu.m.
The conductive structure is disposed at a position different to the
first metal layer on the first substrate. The conductive structure
has a second thickness d2. The second thickness d2 satisfies:
d2.gtoreq.100 .mu.m. The driving component is disposed on the first
substrate or the first metal layer. The at least one power device
is disposed on the first substrate, the first metal layer or the
conductive structure. The driving electrode of the power device is
electrically coupled to the driving component, and the at least one
power electrode of the power device is electrically coupled to the
conductive structure.
[0009] In summary, a driving electrode of the power device is
electrically coupled to the first metal layer or a driving
component on the first metal layer. The gap within the first metal
layer is formed by isotropic etching, and since the thickness of
the first metal layer is merely between 5 .mu.m and 50 .mu.m, a
width of the lateral etching is not too large, thereby effectively
reducing a size of the gap of the first metal layer. Through such
operation, the gap of the first metal layer can be narrower than
the gap between wiring routes of a conventional direct bonded
cooper (DBC) substrate. As a result the layout density per unit
area can be increased, thus increasing the power density.
[0010] It is to be understood that both the foregoing general
description and the following detailed description are by examples,
and are intended to provide further explanation of the invention as
claimed.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] The accompanying drawings are included to provide a further
understanding of the invention, and are incorporated in and
constitute a part of this specification. The drawings illustrate
embodiments of the invention and, together with the description,
serve to explain the principles of the invention. In the
drawings,
[0012] FIG. 1 is a diagram illustrating a cross-sectional view of a
power module according to a first embodiment of the present
invention;
[0013] FIG. 2 is a circuit diagram illustrating a power module
according to a first embodiment of the present invention;
[0014] FIG. 3 is another circuit diagram illustrating a power
module according to a first embodiment of the present
invention;
[0015] FIG. 4 is a diagram illustrating a cross-sectional view of a
power module according to a second embodiment of the present
invention;
[0016] FIG. 5 is diagram illustrating a cross-sectional view of a
power module according to a third embodiment of the present
invention;
[0017] FIG. 6 is a diagram illustrating a cross-sectional view of a
power module according to a fourth embodiment of the present
invention;
[0018] FIG. 7 is a diagram illustrating a cross-sectional view of a
power module according to a fifth embodiment of the present
invention;
[0019] FIG. 8 is a diagram illustrating a cross-sectional view of a
power module according to a sixth embodiment of the present
invention;
[0020] FIG. 9 is a diagram illustrating a cross-sectional view of a
power module according to a seventh embodiment of the present
invention;
[0021] FIG. 10 is a diagram illustrating a cross-sectional view of
a power module according to an eighth embodiment of the present
invention;
[0022] FIG. 11 is a diagram illustrating a cross-sectional view of
a power module according to a ninth embodiment of the present
invention;
[0023] FIG. 12 is a diagram illustrating a cross-sectional view of
a power module according to a tenth embodiment of the present
invention;
[0024] FIG. 13 is a diagram illustrating a cross-sectional view of
a power module according to an eleventh embodiment of the present
invention;
[0025] FIG. 14 is a diagram illustrating a cross-sectional view of
a power module according to a twelfth embodiment of the present
invention;
[0026] FIG. 15 is a diagram illustrating a cross-sectional view of
a power module according to a thirteenth embodiment of the present
invention;
[0027] FIG. 16 is a diagram illustrating a cross-sectional view of
a power module according to a fourteenth embodiment of the present
invention;
[0028] FIG. 17 is a diagram illustrating a cross-sectional view of
a power module according to a fifteenth embodiment of the present
invention;
[0029] FIG. 18 is a diagram illustrating a cross-sectional view of
a power module according to a sixteenth embodiment of the present
invention; and
[0030] FIG. 19 is a diagram illustrating a cross-sectional view of
a power module according to a seventeenth embodiment of the present
invention.
DESCRIPTION OF THE EMBODIMENTS
[0031] Reference will now be made in detail to the present
embodiments of the invention, examples of which are illustrated in
the accompanying drawings. Wherever possible, the same reference
numbers are used in the drawings and the description to refer to
the same or like parts.
First Embodiment
[0032] FIG. 1 is a diagram illustrating a cross-sectional view of a
power module according to a first embodiment of the present
invention. As shown in FIG. 1, the power module comprises a sealing
body 100 and a first substrate 210. A first metal layer 210, a
second metal layer 314, conductive structures 410, 420 and 430, and
at least one power device 500 are disposed on the first substrate
210. The first substrate 210 is disposed in the sealing body 100.
The sealing body 100 covers at least the first metal layer 312, the
conductive structures 410 and 430, a part of the conductive
structure 420 and the power device 500 for protection. The
conductive structure 420 has an exposed part 422. The exposed part
422 is exposed out of the sealing body 100, and electrically
connects to an external device. The exposed part 422 can be
realized by a lead frame, for instance. The first substrate 210
comprises a top side 212 and a bottom side 214 which are relative
to each other. The first metal layer 312 is disposed on the top
side 212 of the first substrate 210. The first metal layer 312 is
thinner than the conductive structures 410, 420 and 430. The second
metal layer 314 is disposed between the first substrate 210 and
each of the conductive structures 410, 420 and 430, so as to carry
the conductive structures 410, 420 and 430. The second metal layer
314 and the first metal layer 312 have the same thickness. In
another embodiment, the thickness of the second metal layer 314 can
be different to that of the first metal layer 312. The second metal
layer 314 can be formed on the first substrate 210 via a process
(e.g., etching, vapor deposition, sputtering or electroplating,
etc.) independently. The second metal layer 314 can also be formed
on the first substrate 210 via the same process as the first metal
layer 312. In addition, the second metal layer 314 and the first
metal layer 312 can be formed on the first substrate 210 via a
process at the same time. The first metal layer 312 is not covered
by the conductive structure 410. The first metal layer 312 is
merely at a position different to the conductive structure 410 on
the first substrate 210. In the other embodiment, copper paste and
the first substrate 210 are sintered to form the first metal layer
312, at the same time, the copper and the first substrate 210 are
sintered to form the conductive structure 410.
[0033] Practically, the first metal layer 312 and the conductive
structure 410 are at the top side 212 of the first substrate, but
the vertical projections of the first metal layer 312 and the
conductive structure 410 on the top side 212 are not overlapped.
The power device comprises a driving electrode 510 and a plurality
of power electrodes 520 and 530. The driving electrode 510 and the
power electrode 520 are disposed at a side, which is furthest away
from the conductive structure 410, of the power device 500. The
power electrode 530 is disposed at a side, which is closest to the
conductive structure 410, of the power device 500. In other words,
the power electrode 530 is disposed on the conductive structure 410
and is electrically connected to the conductive structure 410. The
driving electrode 510 is electrically connected to the first metal
layer 312. The power electrode 520 is electrically connected to the
power device 500 on the conductive structure 420. The power
electrode of the power device 500 on the conductive structure 420
is electrically connected to the conductive structure 420.
[0034] Since the driving electrode 510 can be wired to the first
metal layer 312, the power device 500 can utilize the first metal
layer 312 for circuit layouts. In the present embodiment, the first
metal layer 312 is of a first thickness d1. The first thickness d1
satisfies the condition of 5 .mu.m.ltoreq.d1.ltoreq.50 .mu.m. In
another embodiment, the first metal layer 312 comprising a gap 316,
so the material around the gap 316 can form a routing pattern. In
another embodiment, the gap 316 within the first metal layer 312 is
formed by isotropic etching. Since the thickness of the first metal
layer 312 is merely between 5 .mu.m and 50 .mu.m, the first metal
layer 312 is relatively thin, so the lateral etching of the first
metal layer 312 is not too large, thereby effectively reducing a
size of the gap 316 of the first metal layer 312. Through such
operation, the gap 316 of the first metal layer 312 can be narrower
than that of a conventional direct bonded cooper (DBC) substrate,
and a width of the wiring route of the first metal layer can be
narrower than that of the conventional DBC substrate. As a result
the layout area per unit volume can be increased, thus increasing
the power density. In another embodiment, the first metal layer 312
can be formed on the first substrate 210 by utilizing processes
other than etching. For instance, the first metal layer 312 can be
formed on the first substrate 210 by vapor deposition, sputtering
or electroplating, etc. Hence the first metal layer 312 is not
affected by etching's isotropic characteristics, so the gap 316 and
the width of the wiring routes can all be controlled to be even
narrower. In addition, since the first metal layer 312 does not
have to go through the high-temperature sintering process with the
first substrate 210, the energy consumption of the manufacturing
process can be reduced.
[0035] In the present embodiment, each of the conductive structure
410 has a second thickness d2. The second thickness d2 satisfies
the condition of d2.gtoreq.100 .mu.m, so as to meet a flow capacity
requirement of the power module. On the other hand, since the gap
316 within the first metal layer 312 is directly formed by the
process (such as etching, etc.) that produces the first metal layer
312, the size of the gap 316 is not affected by the thickness of
the conductive structure 410. Therefore, a thicker conductive
structure 410 can be utilized to achieve a higher flow capacity,
without having to consider the size of the gap 316.
[0036] The first thickness d1 corresponds to a one-dimensional
length of the first metal layer 312, measured in a direction of the
normal of the top side 212 of the first substrate 210 which is
horizontal to the first metal layer 312. Similarly, the second
thickness d2 corresponds to a one-dimensional length of the
conductive structure 410, measured in a direction of the normal of
the top side 212 of the first substrate 210 which is horizontal to
the conductive structure 410.
[0037] In the present embodiment, the power device 500 can be a
three-port device such as a MOSFET or an IGBT, etc., but the
present invention is not limited thereto. Taking a MOSFET with 3
pins as an example, as shown in FIG. 2, the driving electrode 510
can be the gate (terminal G), the power electrode 520 can be the
source (terminal S) and the power electrode 530 can be the drain
(terminal D). The gate 510 and the source 520 are at a top side,
which is further away from the conductive structure 410, of the
MOSFET (as illustrated by FIG. 1). The drain 530 is disposed on the
conductive structure 410 and is electrically connected to the
conductive structure 410. A circuit that applies a voltage in
between the driving electrode 510 (the gate) and the power
electrode 520 (the source) is a driving circuit, where a source of
the driving circuit is of the same electrode as the power electrode
520 (the source). In the present embodiment, since the driving
electrode 510 is electrically connected to the first metal layer
312, at least a part of the driving circuit can be realized by the
first metal layer 312. Also, since the gap 316 within the first
metal layer 312 is narrower, the wiring routes of the driving
circuit can be implemented even closer to each other, so as to
increase a driving capability. Taking a MOSFET with 4 pins as an
example, as shown in FIG. 3, the MOSFET with 4 pins differs to the
MOSFET with 3 pins in that an electrode 522 is led-out from the
source 520. A circuit that applies a voltage in between the driving
electrode 510 (the gate) and the electrode 522 is the driving
circuit. In the present embodiment, since the electrode 522 is
electrically connected to the first metal layer 312, at least a
part of the driving circuit can be realized by the first metal
layer 312. Also, since the gap 316 within the first metal layer 312
is narrower, the wiring routes of the driving circuit can be
implemented to be even closer to each other, so as to increase a
driving capability.
[0038] As shown in FIG. 1, only the driving electrode 510 is
electrically connected to the first metal layer 312 and the power
electrode 520 is electrically connected to the power device on the
conductive structure 420. In another embodiment however, the
electrode 522 which is led-out from the power electrode 520 can
also be electrically connected to the first metal layer 312. In
other words, the driving electrode 510 and the electrode 522 which
are led-out from the power electrode 520 can all be wired to the
first metal layer 312, and by performing circuit layouts through
the first metal layer 312, which comprises the gap 316 (i.e., the
gap 316 is narrow), the power density can be increased. For
instance, if the power electrode 520 is the source, the electrode
522 which is led-out from the source can be wired directly to the
first metal layer 312.
[0039] In the present embodiment, the power module can further
comprise a plurality of bonding structures, such as bonding layers
610 and 620. The bonding layer 610 is disposed between the power
device 500 and each of the conductive structures 410, 420 and 430,
so as to fix the power device 500 on the conductive structures 410,
420 and 430, as well as to electrically connect the conductive
structure 410 to the power electrode 530 of the power device 500.
The bonding layer 620 is disposed between the second metal layer
314 and each of the conductive structures 410, 420 and 430, so as
to fix the conductive structures 410, 420 and 430 on the second
metal layer 314. The bonding layers 610 and 620 can be a solder, a
conductive adhesive, a conductive paste or a sintering paste, etc.
Materials of the bonding layers 610 and 620 can be the same or
different. For instance, the bonding layer 610 can be a solder and
the bonding layer 620 can be a sintering paste. In the present
embodiment, the first substrate 210 can be a ceramic substrate.
Second Embodiment
[0040] FIG. 4 is a diagram illustrating a cross-sectional view of a
power module according to a second embodiment of the present
invention. The present embodiment differs to the first embodiment
mainly in that the power module of the present embodiment further
comprises a plurality of flattening structures 318. The flattening
structure 318 is disposed on a surface, which is opposite to the
first substrate 210, of the first metal layer 312. The flattening
structure 318 has a flat upper surface, which is suitable for
wirings. For instance, the flattening structure 318 can be realized
by a coating of platted nickel, silver, nickel gold or platted
palladium, etc., on the first metal layer 312. Other technical
features of the present embodiment are similar to those of the
first embodiment, so relative descriptions are omitted
hereinafter.
Third Embodiment
[0041] FIG. 5 is diagram illustrating a cross-sectional view of a
power module according to a third embodiment of the present
invention. The present embodiment differs to the first embodiment
mainly in that the power module of the present embodiment further
comprises an adhesive structure 710. The adhesive structure 710 is
disposed between the conductive structure 410 and the first
substrate 210, so as to conduct the heat of the conductive
structure 410 to the first substrate 210. By also referring to FIG.
1 and FIG. 3 together, it can be observed that the adhesive
structure 710 has replaced the second metal layer 314 and the
bonding layer 620 under the conductive structure 410. Since the
second metal layer 314 is omitted in the present embodiment, the
manufacturing cost of the second metal layer 314 can be further
saved. In the present embodiment, the adhesive structure 710 can be
disposed below the conductive structure 410 so as to fill the gap
between the conductive structures 410 and 420. Through such
operation, the sealing body 100 and the first substrate 210 can be
combined more closely by the adhesive structure 710. The adhesive
structure 710 can be a thermal paste or a thermal film, etc., but
the present invention is not limited thereto. Other technical
features of the present embodiment are similar to those of the
first embodiment, so relative descriptions are omitted
hereinafter.
Fourth Embodiment
[0042] FIG. 6 is a diagram illustrating a cross-sectional view of a
power module according to a fourth embodiment of the present
invention. The present embodiment differs to the first embodiment
mainly in that the power module of the present embodiment further
comprises a third metal layer 320. The third metal layer 320 is
disposed on the bottom side 214 of the first substrate 210, so as
to reduce electromagnetic noise and prevent moist infiltration. The
third metal layer 320 can be a metal conductive layer which is
disposed on a surface of the sealing body 100, so as to reduce
electromagnetic noise and prevent moist infiltration. Other
technical features of the present embodiment are similar to those
of the first embodiment, so relative descriptions are omitted
hereinafter.
Fifth Embodiment
[0043] FIG. 7 is a diagram illustrating a cross-sectional view of a
power module according to a fifth embodiment of the present
invention. The present embodiment differs to the first embodiment
mainly in that the power module of the present embodiment further
comprises a second substrate 220. The sealing body 100 comprises a
bottom surface 110 and an upper surface 120 which are relative to
each other. The first substrate 210 and the second substrate 220
are separated from each other. The first substrate 210 is closer to
the bottom surface 110 and the second substrate 220 is closer to
the upper surface 120. In other words, the first substrate 210 and
the second substrate 220 are disposed within the sealing object 100
in a vertical symmetry, so as to prevent the power module from
warpage or deformation.
[0044] In the present embodiment, the power module can further
comprise a fourth metal layer 330. The second substrate 220
comprises a top side 222 and a bottom side 224 which are relative
to each other. The top side 222 of the second substrate 220 is
closer to the first substrate 210 than the bottom side 224. The
fourth metal layer 330 is disposed on the top side 222 of the
second substrate 220. Through such operation, the fourth metal
layer 330 on the second substrate 220 can be utilized for circuit
layouts, even if the first metal layer 312 does not have a
sufficient area for circuit layouts. For instance, an electronic
component 730 can be disposed on the fourth metal layer 330.
[0045] In the present embodiment, the power module can further
comprise a connector 720. The connector 720 is electrically
connected to the conductive structure 420 and the fourth metal
layer 330, so the electronic component 730 on the fourth metal
layer 330 can be electrically connected to the conductive structure
420. Further, the connector 720 can also support the second
substrate 220 and the first substrate 210. In another embodiment,
the connector 720 can also be electrically connected to the first
metal layer 312 and the fourth metal layer 330. Other technical
features of the present embodiment are similar to those of the
first embodiment, so relative descriptions are omitted
hereinafter.
Sixth Embodiment
[0046] FIG. 8 is a diagram illustrating a cross-sectional view of a
power module according to a sixth embodiment of the present
invention. The present embodiment differs to the fifth embodiment
mainly in that the power module of the present embodiment further
comprises a fifth metal layer 340. The fifth metal layer 340 is
disposed on the bottom side 224 of the second substrate 220, so as
to reduce electromagnetic noise and prevent moist infiltration. The
fifth metal layer 340 can be a metal conductive layer, which is
disposed on the surface of the sealing body 100, so as to reduce
electromagnetic noise and prevent moist infiltration. Other
technical features of the present embodiment are similar to those
of the fifth embodiment, so relative descriptions are omitted
hereinafter.
Seventh Embodiment
[0047] FIG. 9 is a diagram illustrating a cross-sectional view of a
power module according to a seventh embodiment of the present
invention. The present embodiment differs to the first embodiment
mainly in that the first substrate 210 comprises a plurality of
sub-substrates 210a and 210b. The sub-substrates 210a and 210b are
separated from each other. When the first substrate 210 is warped
due to heat, the longer the first substrate 210 is, the higher the
warpage height. Since the first substrate 210 of the present
embodiment is divided to at least two separate sub-substrates 210a
and 210b, the sub-substrate 210a or the sub-substrate 210b must be
shorter than the whole first substrate 210. Through such operation,
when the sub-substrates 210a and the sub-substrate 210b are warped
due to heat, the corresponding warpage height is lower, so the
warpage is reduced to a certain extent.
[0048] In the present embodiment, the first metal layer 312 is
disposed on the sub-substrates 210a and 210b. The conductive
structure 410 and the power device 500 can be disposed on the
sub-substrate 210a, and the conductive structure 420 and the power
device 500 can be disposed on the sub-substrate 210b. The power
devices 500 can be electrically connected by bonding wires. Other
technical features of the present embodiment are similar to those
of the fifth embodiment, so relative descriptions are omitted
hereinafter.
Eighth Embodiment
[0049] FIG. 10 is a diagram illustrating a cross-sectional view of
a power module according to an eighth embodiment of the present
invention. The present embodiment differs to the first embodiment
mainly in that the shapes of the conductive structures 410 and 420
are different to those of the first embodiment. More specifically,
the conductive structure 410 comprises a body 412 and a locking
structure 414. The sealing body 100 is fixed by the locking
structure 414. More specifically, the locking structure 414 is
extended out of the body 412 and is covered by the sealing body
100. Hence the locking structure 414 is fixed within the sealing
body 100. In other words, the body 412 of the conductive structure
410 is not smooth without fluctuant forms, as the locking structure
414 is extended out of the body 412. Through such operation, a
force that fixes the sealing body 100 and the conductive structure
410 together can be increased, so the sealing body 100 is less
likely to detach from the conductive structure 410. Similarly, the
conductive structure 420 also comprises a body 424 and a locking
structure 426. The locking structure 426 is fixed to the sealing
body 100. More specifically, the locking structure 426 is extended
out of the body 424 and is fixed within the sealing body 100, so
the sealing body 100 is less likely to detach from the conductive
structure 420. In another embodiment, each of the locking
structures 414 and 426 can be a notch, a protrusion or a cavity,
etc., but the present invention is not limited thereto. Other
technical features of the present embodiment are similar to those
of the first embodiment, so relative descriptions are omitted
hereinafter.
Ninth Embodiment
[0050] FIG. 11 is a diagram illustrating a cross-sectional view of
a power module according to a ninth embodiment of the present
invention. The present embodiment differs to the first embodiment
mainly in that the power module of the present embodiment further
comprises a heat dissipation structure 740. The conductive
structure 410 is disposed on the top side 212 of the first
substrate 210. The heat dissipation structure 740 is disposed on
the bottom side 214 of the first substrate 210, meaning the heat
dissipation structure 740 is disposed below the first substrate
210. Through such operation, after the heat of the power device 500
on the conductive structure 410 is conducted to the first substrate
210, the heat dissipation structure 740 can then conduct the heat
to an external environment.
[0051] In the present embodiment, the power module can further
comprise an adhesive layer 630. The adhesive layer 630 is disposed
between the bottom side 214 of the first substrate 210 and the heat
dissipation structure 740, so as to fix the first substrate 210 to
the heat dissipation structure 740. The adhesive layer 630 can be a
thermal paste or a thermal film, etc., so the heat can be conducted
to the heat dissipation structure 740 more effectively. Other
technical features of the present embodiment are similar to those
of the first embodiment, so relative descriptions are omitted
hereinafter.
Tenth Embodiment
[0052] FIG. 12 is a diagram illustrating a cross-sectional view of
a power module according to a tenth embodiment of the present
invention. The present embodiment differs to the ninth embodiment
mainly in that the power module of the present embodiment further
comprises a third metal layer 320. The third metal layer 320 is
disposed at the bottom side 214 of the first substrate 210.
Further, the heat dissipation structure 740 is disposed below the
third metal layer 320. More specifically, the third metal layer 320
is disposed between the bottom side 214 of the first substrate 210
and the adhesive layer 630, so as to conduct the heat from the
first substrate 210 to the adhesive layer 630. The third metal
layer 320 can also lower the electromagnetic noise. Other technical
features of the present embodiment are similar to those of the
first embodiment, so relative descriptions are omitted
hereinafter.
Eleventh Embodiment
[0053] FIG. 13 is a diagram illustrating a cross-sectional view of
a power module according to an eleventh embodiment of the present
invention. The present embodiment differs to the first embodiment
mainly in that the sealing body 100 in the first embodiment is
replaced by a case 810 and a sealing paste 820 in the present
embodiment. The case 810 is disposed on the first substrate 210 and
the case 810 has an accommodating space 812. The sealing paste 820
is within the accommodating space 812. The sealing paste 820 covers
at least the first metal layer 312, the conductive structures 410,
420 and 430, and the power device 500 for protection. The exposed
part 422 is exposed out of the case 810. Other technical features
of the present embodiment are similar to those of the first
embodiment, so relative descriptions are omitted hereinafter.
Twelfth Embodiment
[0054] FIG. 14 is a diagram illustrating a cross-sectional view of
a power module according to a twelfth embodiment of the present
invention. The present embodiment differs to the eleventh
embodiment mainly in that the power module of the present
embodiment further comprises a third metal layer 320, an adhesive
layer 630 and a heat dissipation structure 740. The third metal
layer 320 is disposed at the bottom side 214 of the first substrate
210. The heat dissipation structure 740 is disposed below the third
metal layer 320. The adhesive layer 630 is disposed between the
third metal layer 320 and the heat dissipation structure 740. The
case 810 is disposed on the heat dissipation structure 740. The
first substrate 210, the first metal layer 312, the second metal
layer 320, the conductive structures 410, 420 and 430 and the power
device 500 are disposed within the accommodating space 812. The
adhesive paste 820 covers at least the first substrate 210, the
first metal layer 312, the conductive structures 410, 420 and 430,
and the power device 500 for protection. The exposed part 422 is
exposed out of the case 810. According to the above-mentioned
structure, the heat generated by the power device 500 can be
conducted to the heat dissipation structure 740 and the heat
dissipation structure 740 can then conduct the heat to an external
environment. In another embodiment, the power module can further
comprise a heat dissipation structure. The heat dissipation
structure is disposed below the first substrate 210 mentioned
above. The case 810 is disposed on the heat dissipation structure.
The first substrate 210, the first metal layer 312, the conductive
structures 410, 420 and 430 and the power device 500 are disposed
within the accommodating space 812. The adhesive paste 820 covers
at least the first substrate 210, the first metal layer 312, the
conductive structures 410, 420 and 430, and the power device 500
for protection. The heat generated by the power device 500 can be
conducted to the heat dissipation structure 740, so the heat
dissipation structure 740 can then conduct the heat to an external
environment. Other technical features of the present embodiment are
similar to those of the first embodiment and the eleventh so
relative descriptions are omitted hereinafter.
Thirteenth Embodiment
[0055] FIG. 15 is a diagram illustrating a cross-sectional view of
a power module according to a thirteenth embodiment of the present
invention. The present embodiment differs to the first embodiment
mainly in that the power module of the present embodiment can
further comprise a driving component 910. The driving component 910
is disposed on the first metal layer 312. The driving electrode 510
of the power device 500 is electrically connected to an output
electrode of the driving component 910. The driving component 910
can be a driving chip, which drives the power device 500 through
the driving electrode 510. In other words, in the present
embodiment, the driving electrode 510 of the power device 500 can
be wired directly to the driving component 910. Although only one
driving component 910 is illustrated in FIG. 15, a number of the
driving component 910 is not limited to one. There can be a
plurality of driving components 910 and the present invention is
not limited thereto. One driving component can correspond to one
power device 500, or to a plurality of power device 500. In another
embodiment, when a lower surface of the driving component 910 is
not electrically led-out, the driving component 910 can be disposed
directly on the first substrate 210. An electrode on an upper
surface of the driving component 910 can be electrically connected
to the first metal layer 312 via methods such as conjunction
wirings, etc., and the driving electrode 510 of the power device
500 can be wired directly to the first metal layer 312. Through
such operation, a driving circuit can be formed. In another
embodiment, the driving electrode 510 of the power device 500 and
the driving component 910 can be electrically connected by wiring
to the first metal layer 312 respectively. In another embodiment,
the driving component 910 can also be replaced by a controlling
component. The controlling component can be a controller chip,
which controls the power device 500 via the driving electrode 510.
The controlling component can be disposed on the first metal layer
312 or on the first substrate 210. An output electrode of the
controlling component can be electrically connected to the driving
electrode 510 of the power device 500, so as to control the power
device 500. Other technical features of the present embodiment are
similar to those of the first embodiment, so relative descriptions
are omitted hereinafter.
Fourteenth Embodiment
[0056] FIG. 16 is a diagram illustrating a cross-sectional view of
a power module according to a fourteenth embodiment of the present
invention. The present embodiment differs to the thirteenth
embodiment mainly in that the power module of the present
embodiment can further comprise a passive component 920. The
passive component 920 is disposed on the first substrate 210. More
specifically, the passive component 920 is disposed on the first
metal layer 312 and is electrically connected to the driving
component 910. The passive component 920 can be a capacitor, a
resistor, a diode or an inductor, etc., but the present invention
is not limited thereto. Although only one passive component 920 is
illustrated in FIG. 16, a number of the passive component 920 is
not limited to one. There can be a plurality of passive components
920 and the present invention is not limited thereto. Other
technical features of the present embodiment are similar to those
of the first embodiment and the thirteenth embodiment, so relative
descriptions are omitted hereinafter.
Fifteenth Embodiment
[0057] FIG. 17 is a diagram illustrating a cross-sectional view of
a power module according to a fifteenth embodiment of the present
invention. The present embodiment differs to the fourteenth
embodiment mainly in that the passive component 930 can be formed
by applying/printing a material of the passive component 930
directly to the first substrate 210 and the respective electrically
led-out part of the passive component 930 can be formed directly
via the first metal layer 312. For instance, a resistive material
can be printed on the first substrate 210 to form a resistor, where
two electrodes of the resistor can be formed by covering the
resistive material directly on the first metal layer 312. More
specifically, a material of the first metal layer 312 is firstly
printed and the resistive material is then printed to a desired
location. Two ends of the resistive material cover corresponding
positions of the first metal layer 312. The first metal layer 312
and the resistor can then be formed by sintering. The first metal
layer 312 can also be formed first before printing the resistive
material to a desired location to form a resister. In another
embodiment, the resistive material can also be printed on the first
metal layer 312 to form a resistor. In yet another embodiment, the
resistive material can be printed on both of the first substrate
210 and the first metal layer 312 to form a resistor. Similarly, a
sandwich-like structure of a metal layer/a high di-electric
material layer/a metal layer can be printed onto the first metal
layer 312 in an interlaced manner, so as to form a capacitor.
Similarly, a sandwich-like structure of a high permeability
material/a metal/a high permeability material can be printed onto
the first metal layer 312 in an interlaced manner, so as to form an
inductor (such method can also be utilized to form a hollow
inductor or a semi-hollow inductor). Similarly, a sandwich-like
structure of a metal layer/a high di-electric material layer/a
metal layer can be printed onto the first substrate 210 in an
interlaced manner, so as to form a capacitor. Similarly, a
sandwich-like structure of a high permeability material/a metal/a
high permeability material can be printed onto the first substrate
210 in an interlaced manner, so as to form an inductor. In another
embodiment, a sandwich-like structure of a metal layer/a high
di-electric material layer/a metal layer can be printed onto the
first substrate 210 and the first metal layer 312 in an interlaced
manner, so as to form a capacitor. In yet another embodiment, a
sandwich-like structure of a high permeability material/a metal/a
high permeability material metal layer can be printed, in an
interlaced manner, onto the first substrate 210 and the first metal
layer 312 to form an inductor.
[0058] In another embodiment, a plurality of metal layout layers
(the metal layout layers can be designed to become different
circuit patterns according to practical needs) and a plurality of
insulating layers can be formed on the first substrate 210 through
a printing process, meaning the metal layout layers and the
insulating layers are printed, in an interlaced manner, onto the
first substrate 210. A multi-layer layout can be realized by having
a perforation in the insulating layer to electrically connect
different locations of an upper metal wiring layer and a lower
metal wiring layer (i.e., the upper and the lower metal wiring
layers can be neighboring metal wiring layers or non-neighboring
metal wiring layers), so as to increase the layout density. Other
technical features of the present embodiment are similar to those
of the first embodiment, the thirteenth embodiment and the
fourteenth embodiment, so relative descriptions are omitted
hereinafter.
Sixteenth Embodiment
[0059] FIG. 18 is a diagram illustrating a cross-sectional view of
a power module according to a sixteenth embodiment of the present
invention. The present embodiment differs to the thirteenth
embodiment mainly in that the power module of the present
embodiment can further comprise a passive component 920 and a
circuit board 940. The circuit board 940 is disposed on the first
metal layer 312. The driving component 910 and the passive
component 920 are disposed on the circuit board 940. Since a layout
density of the circuit board 940 is high, the controlling
component, the driving component 910 and the passive component 920
are preferred to be disposed on the circuit board 940. Further, a
material of the circuit board 940 can be a heat insulating
material, which blocks the heat from flowing to the driving
component 910 as the driving component 910 may be damaged by the
heat. The circuit board 940 can be a printed circuit board (PCB),
but the present invention is not limited thereto. Other technical
features of the present embodiment are similar to those of the
first embodiment and the thirteenth embodiment, so relative
descriptions are omitted hereinafter.
Seventeenth Embodiment
[0060] FIG. 19 is a diagram illustrating a cross-sectional view of
a power module according to a seventeenth embodiment of the present
invention. The present embodiment differs to the previous
embodiments mainly in that the power device 500a of the present
embodiment is different to the power device 500 in previous
embodiments. More specifically, a power electrode and a driving
electrode of the power device 500a are disposed to a top side,
which is furthest away from of the first substrate 210, of the
power device 500. In other words, the driving electrode 510 and the
power electrodes 520 and 530a are disposed on the top side of the
power device 500. The driving electrode 510 can be wired to the
first metal layer 312. The power electrodes 520 and 530a can be
wired to the conductive structure 410 and the conductive structure
420 respectively. In another embodiment, since the power electrode
530a is disposed at the top side of the power device 500a, a bottom
side of the power device 500a does not require a conductive
structure to be implemented. Rather, the conductive structure can
be disposed on the first substrate 210 directly, or can be disposed
on the first metal layer directly, so as to save the cost of the
conductive structure.
[0061] Although the present invention has been described in
considerable detail with reference to certain embodiments thereof,
other embodiments are possible. Therefore, the spirit and scope of
the appended claims should not be limited to the description of the
embodiments contained herein.
[0062] It will be apparent to those skilled in the art that various
modifications and variations can be made to the structure of the
present invention without departing from the scope or spirit of the
invention. In view of the foregoing, it is intended that the
present invention cover modifications and variations of this
invention provided they fall within the scope of the following
claims and their equivalents.
* * * * *