U.S. patent application number 14/284884 was filed with the patent office on 2015-02-19 for display unit, method of manufacturing display unit, and electronic apparatus.
This patent application is currently assigned to Sony Corporation. The applicant listed for this patent is Sony Corporation. Invention is credited to Takayoshi Kato, Takashi Sakairi, Mitsuharu Shoji, Seiichi Yokoyama.
Application Number | 20150048328 14/284884 |
Document ID | / |
Family ID | 52099391 |
Filed Date | 2015-02-19 |
United States Patent
Application |
20150048328 |
Kind Code |
A1 |
Kato; Takayoshi ; et
al. |
February 19, 2015 |
DISPLAY UNIT, METHOD OF MANUFACTURING DISPLAY UNIT, AND ELECTRONIC
APPARATUS
Abstract
A display unit includes a plurality of first electrodes provided
to respective pixels; an insulating layer having an opening facing
each of the first electrodes and having an overhang at an edge of
the opening; a charge injection-transport layer being cut or having
higher resistance at the overhang of the insulating layer to
exhibit one or both of a charge injection property and a charge
transport property; an organic layer including one light-emitting
layer or a plurality of light-emitting layers common to all of the
pixels; and a second electrode formed on an entire surface of the
organic layer, the first electrodes, the insulating layer, the
charge injection-transport layer, the organic layer, and the second
electrode being disposed in this order from a substrate side.
Inventors: |
Kato; Takayoshi; (Kanagawa,
JP) ; Yokoyama; Seiichi; (Kanagawa, JP) ;
Shoji; Mitsuharu; (Kanagawa, JP) ; Sakairi;
Takashi; (Kanagawa, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Sony Corporation |
Tokyo |
|
JP |
|
|
Assignee: |
Sony Corporation
Tokyo
JP
|
Family ID: |
52099391 |
Appl. No.: |
14/284884 |
Filed: |
May 22, 2014 |
Current U.S.
Class: |
257/40 ;
438/34 |
Current CPC
Class: |
H01L 51/5209 20130101;
H01L 27/3246 20130101; H01L 51/504 20130101; H01L 27/322 20130101;
H01L 51/5056 20130101; H01L 51/5088 20130101; H01L 51/5218
20130101 |
Class at
Publication: |
257/40 ;
438/34 |
International
Class: |
H01L 27/32 20060101
H01L027/32; H01L 51/52 20060101 H01L051/52; H01L 51/50 20060101
H01L051/50; H01L 51/56 20060101 H01L051/56 |
Foreign Application Data
Date |
Code |
Application Number |
May 29, 2013 |
JP |
2013-112694 |
Claims
1. A display unit comprising: a plurality of first electrodes
provided to respective pixels; an insulating layer having an
opening facing each of the first electrodes and having an overhang
at an edge of the opening; a charge injection-transport layer being
cut or having higher resistance at the overhang of the insulating
layer to exhibit one or both of a charge injection property and a
charge transport property; an organic layer including one
light-emitting layer or a plurality of light-emitting layers common
to all of the pixels; and a second electrode formed on an entire
surface of the organic layer, the first electrodes, the insulating
layer, the charge injection-transport layer, the organic layer, and
the second electrode being disposed in this order from a substrate
side.
2. The display unit according to claim 1, wherein the insulating
layer includes a first inorganic layer and a second inorganic layer
that are laminated in this order from the first electrode side, and
the overhang is a portion of the second inorganic layer, the
portion projecting over from an end edge of the first inorganic
layer toward inside of the opening at the edge of the opening.
3. The display unit according to the display unit according to
claim 2, wherein the first and second inorganic layers are made of
materials that are allowed to obtain etching selectivity and are
different from each other.
4. The display unit according to claim 2, wherein a thickness of
the second inorganic layer is larger than that of the first
inorganic layer.
5. The display unit according to claim 1, wherein the insulating
layer includes a third inorganic layer that is embedded in a region
between the first electrodes and is planarized.
6. The display unit according to claim 5, wherein a thickness of
the third inorganic layer is substantially equal to that of the
first electrode, the insulating layer includes a first inorganic
layer and a second inorganic layer laminated in this order from the
first electrode side on the third inorganic layer, and the overhang
is a portion of the second inorganic layer, the portion projecting
over from an end edge of the first inorganic layer toward inside of
the opening at an edge of the opening.
7. The display unit according to claim 5, wherein a thickness of
the third inorganic layer is larger than that of the first
electrode, the insulating layer includes a fourth inorganic layer
laminated on the third inorganic layer, and the overhang is a
portion of the fourth inorganic layer, the portion projecting over
from an end edge of the third inorganic layer toward inside of the
opening at an edge of the opening.
8. The display unit according to claim 1, wherein each of the first
electrodes includes a metal oxide layer forming a part of the
insulating layer, the insulating layer includes a fifth inorganic
layer on the first electrodes, and the overhang is a portion of the
fifth inorganic layer, the portion projecting over from an inner
wall of the metal oxide layer toward inside of the opening at an
edge of the opening.
9. The display unit according to claim 1, wherein each of the first
electrodes has a depression on a surface thereof, the insulating
layer includes a fifth inorganic layer on the first electrodes, and
the overhang is a portion of the fifth inorganic layer, the portion
projecting over from an inner wall of the depression toward inside
of the opening at an edge of the opening.
10. The display unit according to claim 1, wherein the charge
injection-transport layer includes a hole injection layer.
11. The display unit according to claim 1, wherein the organic
layer is formed by laminating the plurality of light-emitting
layers, and the organic layer emits white light by mixing of light
of colors emitted from the respective light-emitting layers.
12. A method of manufacturing a display unit, the method
comprising: forming a plurality of first electrodes provided to
respective pixels on a substrate; forming an insulating layer on
the plurality of first electrodes, the insulating layer having an
opening facing each of the first electrodes and having an overhang
at an edge of the opening; forming a charge injection-transport
layer on the insulating layer, the charge-injection-transport layer
being cut or having higher resistance at the overhang of the
insulating layer to exhibit one or both of a charge injection
property and a charge transport property; forming, on the charge
injection-transport layer, an organic layer including a
light-emitting layer common to all of the pixels; and forming a
second electrode on an entire surface of the organic layer.
13. The method of manufacturing the display unit according to claim
12, wherein, in the forming of the insulating layer, a first
inorganic layer and a second inorganic layer are formed in this
order on the plurality of the first electrodes, and in a selective
region corresponding to each of the first electrodes, the second
inorganic layer is etched, and then isotropic etching is performed
on the first inorganic layer to form the opening with the
overhang.
14. The method of manufacturing the display unit according to claim
12, wherein, in the forming of the insulating layer, a third
inorganic layer is formed on the plurality of first electrodes to
be embedded in a region between the first electrodes, and the third
inorganic layer is planarized.
15. The method of manufacturing the display unit according to claim
14, wherein the third inorganic layer is planarized until a surface
of each of the first electrodes is exposed, after the third
inorganic layer is planarized, a first inorganic layer and a second
inorganic layer are formed in this order, and in a selective region
corresponding to each of the first electrodes, the second inorganic
layer is etched, and then isotropic etching is performed on the
first inorganic layer to form the opening with the overhang.
16. The method of manufacturing the display unit according to claim
14, wherein the third inorganic layer is planarized to remain with
a predetermined thickness on the first electrodes, a fourth
inorganic layer is formed on the planarized third inorganic layer,
and in a selective region corresponding to each of the first
electrodes, the fourth inorganic layer is etched, and then
isotropic etching is performed on the third inorganic layer to form
the opening with the overhang.
17. The method of manufacturing the display unit according to claim
12, wherein in the forming of the first electrodes, a metal oxide
layer is formed by oxidizing a surface of each of the first
electrodes, and in the forming of the insulating layer, a fifth
inorganic layer is formed on the plurality of first electrodes, and
in a selective region corresponding to each of the first
electrodes, the fifth inorganic layer is etched, and then isotropic
etching is performed on the metal oxide layer to form the opening
with the overhang.
18. The method of manufacturing the display unit according to claim
12, wherein, in the forming of the insulating layer, a fifth
inorganic layer is formed on the plurality of first electrodes, and
in a selective region corresponding to each of the first
electrodes, the fifth inorganic layer is etched, and then isotropic
etching is performed on each of the first electrodes to form a
depression, thereby forming the opening with the overhang.
19. The method of manufacturing the display unit according to claim
12, wherein the charge injection-transport layer includes a hole
injection layer.
20. An electronic apparatus provided with a display unit, the
display unit comprising: a plurality of first electrodes provided
to respective pixels; an insulating layer having an opening facing
each of the first electrodes and having an overhang at an edge of
the opening; a charge injection-transport layer being cut or having
higher resistance at the overhang of the insulating layer to
exhibit one or both of a charge injection property and a charge
transport property; an organic layer including one light-emitting
layer or a plurality of light-emitting layers common to all of the
pixels; and a second electrode formed on an entire surface of the
organic layer, the first electrodes, the insulating layer, the
charge injection-transport layer, the organic layer, and the second
electrode being disposed in this order from a substrate side.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit of Japanese Priority
Patent Application JP 2013-112694 filed May 29, 2013, the entire
contents which are incorporated herein by reference.
BACKGROUND
[0002] The present technology relates to a display unit including
an organic electroluminescence device provided with an insulating
film as a device isolation film, a method of manufacturing the
same, and an electronic apparatus including such a display
unit.
[0003] In recent years, as one flat panel display, an organic EL
display using an organic electroluminescence (EL) device has been
attracting attention. Since the organic EL display does not need a
backlight, reduction in thickness and weight of the organic EL
display is achievable. Moreover, since the organic EL display is a
self-luminous type display, the organic EL display has
characteristics of a wide viewing angle and low power consumption,
and has been developed for practical use.
[0004] Such an organic EL display is allowed to achieve high
contrast and high color reproducibility, for example, by forming
light-emitting layers of respective colors RGB for respective
pixels (color-coding). On the other hand, to enhance resolution,
reduction in pixel pitch is desired. However, the finer the pixel
pitch is, the more difficult the above-described color-coding of
the light-emitting layers becomes. Therefore, a technique of
forming a white light-emitting layer in all pixels and separating
white light into light of colors RGB with use of color filters is
used (for example, refer to Japanese Unexamined Patent Application
Publication No. 2012-216495).
SUMMARY
[0005] In a display unit in Japanese Unexamined Patent Application
Publication No. 2012-216495, an organic layer including a
light-emitting layer is formed over all pixels between a first
electrode and a second electrode provided to each of the pixels. It
is desirable to reduce leakage of a drive current (current leakage
between pixels) in such a configuration.
[0006] It is desirable to provide a display unit capable of
reducing current leakage in a device configuration including a
light-emitting layer common to all pixels, a method of
manufacturing a display unit, and an electronic apparatus.
[0007] According to an embodiment of the present technology, there
is provided a display unit including: a plurality of first
electrodes provided to respective pixels; an insulating layer
having an opening facing each of the first electrodes and having an
overhang at an edge of the opening; a charge injection-transport
layer being cut or having higher resistance at the overhang of the
insulating layer to exhibit one or both of a charge injection
property and a charge transport property; an organic layer
including one light-emitting layer or a plurality of light-emitting
layers common to all of the pixels; and a second electrode formed
on an entire surface of the organic layer, the first electrodes,
the insulating layer, the charge injection-transport layer, the
organic layer, and the second electrode being disposed in this
order from a substrate side.
[0008] According to an embodiment of the present technology, there
is provided an electronic apparatus provided with a display unit,
the display unit including: a plurality of first electrodes
provided to respective pixels; an insulating layer having an
opening facing each of the first electrodes and having an overhang
at an edge of the opening; a charge injection-transport layer being
cut or having higher resistance at the overhang of the insulating
layer to exhibit one or both of a charge injection property and a
charge transport property; an organic layer including one
light-emitting layer or a plurality of light-emitting layers common
to all of the pixels; and a second electrode formed on an entire
surface of the organic layer, the first electrodes, the insulating
layer, the charge injection-transport layer, the organic layer, and
the second electrode being disposed in this order from a substrate
side.
[0009] In the display unit and the electronic apparatus according
to the embodiments of the present technology, the insulating layer
having an opening facing each of the first electrodes provided to
respective pixels is included, and the overhang is provided at the
edge of the opening of the insulating layer; therefore, the charge
injection-transport layer is formed so as to be cut or to have
higher resistance. Accordingly, in a configuration in which the
organic layer including the light-emitting layer is provided common
to all of the pixels, the charge injection-transport layer is
electrically blocked at a boundary between adjacent pixels.
[0010] According to an embodiment of the present technology, there
is provided a method of manufacturing a display unit, the method
including: forming a plurality of first electrodes provided to
respective pixels on a substrate; forming an insulating layer on
the plurality of first electrodes, the insulating layer having an
opening facing each of the first electrodes and having an overhang
at an edge of the opening; forming a charge injection-transport
layer on the insulating layer, the charge-injection-transport layer
being cut or having higher resistance at the overhang of the
insulating layer to exhibit one or both of a charge injection
property and a charge transport property; forming, on the charge
injection-transport layer, an organic layer including a
light-emitting layer common to all of the pixels; and forming a
second electrode on an entire surface of the organic layer.
[0011] In the method of manufacturing the display unit according to
the embodiment of the present technology, the insulating layer has
an opening facing each of the first electrodes provided to
respective pixels, and has the overhang at the edge of the opening;
therefore, the charge injection-transport layer is formed to be cut
or to have higher resistance at the overhang. Accordingly, in a
configuration in which the organic layer including the
light-emitting layer is provided common to all of the pixels, the
charge injection-transport layer is electrically blocked at a
boundary between adjacent pixels.
[0012] In the display unit and the electronic apparatus according
to the embodiment of the present technology, in a configuration in
which the organic layer including the light-emitting layer is
provided common to all of the pixels by including the insulating
layer having an opening facing each of the first electrodes
provided to respective pixels and having the overhang at the edge
of the opening of the insulating layer, the charge
injection-transport layer is allowed to be electrically blocked at
a boundary between adjacent pixels. Therefore, in the device
configuration including the common light-emitting layer for all of
the pixels, current leakage is allowed to be reduced.
[0013] In the method of manufacturing the display unit according to
the embodiment of the present technology, while the charge
injection-transport layer is electrically blocked at a boundary
between adjacent pixels, a configuration in which the organic layer
including the light-emitting layer is provided common to all of the
pixels by including the insulating layer having an opening facing
each of the first electrodes provided to respective pixels and
having the overhang at the edge of the opening of the insulating
layer is allowed to be formed. Therefore, in the device
configuration including the common light-emitting layer for all of
the pixels, current leakage is allowed to be reduced.
[0014] It is to be understood that both the foregoing general
description and the following detailed description are exemplary,
and are intended to provide further explanation of the technology
as claimed.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] The accompanying drawings are included to provide a further
understanding of the technology, and are incorporated in and
constitute a part of this specification. The drawings illustrate
embodiments and, together with the specification, serve to explain
the principles of the technology.
[0016] FIG. 1 is a diagram illustrating a configuration of a
display unit according to a first embodiment of the present
technology.
[0017] FIG. 2 is a diagram illustrating an example of a pixel drive
circuit illustrated in FIG. 1.
[0018] FIG. 3 is a sectional view illustrating a configuration of
the display unit illustrated in FIG. 1.
[0019] FIG. 4A is an enlarged sectional view around an opening of
an insulating film illustrated in FIG. 3.
[0020] FIG. 4B is a schematic sectional view illustrating a
laminate configuration of an organic EL device illustrated in FIG.
3.
[0021] FIG. 5 is a sectional view for describing a method of
manufacturing the display unit illustrated in FIG. 3.
[0022] FIG. 6A is a sectional view illustrating a process following
FIG. 5.
[0023] FIG. 6B is a sectional view illustrating a process following
FIG. 6A.
[0024] FIG. 6C is a sectional view illustrating a process following
FIG. 6B.
[0025] FIG. 7 is a sectional view illustrating a process following
FIG. 6C.
[0026] FIG. 8 is a sectional view illustrating a process following
FIG. 7.
[0027] FIG. 9 is a sectional view illustrating a process following
FIG. 8.
[0028] FIG. 10 is a sectional view illustrating a process following
FIG. 9.
[0029] FIG. 11 is an enlarged sectional view around an opening of
an insulating film of a device configuration according to
Modification Example 1.
[0030] FIG. 12A is a sectional view for describing a process of
forming the device configuration illustrated in FIG. 11.
[0031] FIG. 12B is a sectional view illustrating a process
following FIG. 12A.
[0032] FIG. 13A is a sectional view illustrating a process
following FIG. 12B.
[0033] FIG. 13B is a sectional view illustrating a process
following FIG. 13A.
[0034] FIG. 13C is a sectional view illustrating a process
following FIG. 13B.
[0035] FIG. 14 is an enlarged sectional view around an opening of
an insulating film of a device configuration according to
Modification Example 2.
[0036] FIG. 15A is a sectional view for describing a process of
forming the device configuration illustrated in FIG. 14.
[0037] FIG. 15B is a sectional view illustrating a process
following FIG. 15A.
[0038] FIG. 15C is a sectional view illustrating a process
following FIG. 15B.
[0039] FIG. 16A is a characteristic diagram illustrating a
relationship between processing time for depression formation and a
height h of an overhang.
[0040] FIG. 16B is a characteristic diagram illustrating the
processing time for depression formation and a width d of the
overhang.
[0041] FIG. 17 is a sectional view illustrating a configuration of
a display unit according to a second embodiment of the present
technology.
[0042] FIG. 18 is an enlarged sectional view of an opening of an
insulating film and a region between pixels illustrated in FIG.
17.
[0043] FIG. 19 is a sectional view for describing a method of
manufacturing the display unit illustrated in FIG. 17.
[0044] FIG. 20A is a sectional view illustrating a process
following FIG. 19.
[0045] FIG. 20B is a sectional view illustrating a process
following FIG. 20A.
[0046] FIG. 20C is a sectional view illustrating a process
following FIG. 20B.
[0047] FIG. 20D is a sectional view illustrating a process
following FIG. 20C.
[0048] FIG. 20E is a sectional view illustrating a process
following FIG. 20D.
[0049] FIG. 21 is a sectional view illustrating a process following
FIG. 20E.
[0050] FIG. 22 is a sectional view illustrating a process following
FIG. 21.
[0051] FIG. 23 is a sectional view of a display unit with a device
configuration according to another modification example.
[0052] FIG. 24 is a sectional view for describing a process of
forming the device configuration illustrated in FIG. 23.
[0053] FIG. 25 is a sectional view of a display unit with a device
configuration according to Modification Example 3.
[0054] FIG. 26 is an enlarged sectional view of an opening of an
insulating film and a region between pixels illustrated in FIG.
25.
[0055] FIG. 27A is a sectional view for describing a method of
manufacturing the display unit illustrated in FIG. 25.
[0056] FIG. 27B is a sectional view illustrating a process
following FIG. 27A.
[0057] FIG. 28A is a sectional view illustrating a process
following FIG. 27B.
[0058] FIG. 28B is a sectional view illustrating a process
following FIG. 28A.
[0059] FIG. 29 is a sectional view of a display unit with a device
configuration according to another modification example.
[0060] FIG. 30 is a plan view illustrating a schematic
configuration of a module including the display unit according to
any of the embodiments and the like.
[0061] FIG. 31 is a perspective view illustrating an appearance of
Application Example 1.
[0062] FIG. 32A is a perspective view illustrating an appearance
viewed from a front side of Application Example 2.
[0063] FIG. 32B is a perspective view illustrating an appearance
viewed from a back side of Application Example 2.
[0064] FIG. 33 is a perspective view illustrating an appearance of
Application Example 3.
[0065] FIG. 34 is a perspective view illustrating an appearance of
Application Example 4.
[0066] FIG. 35A is a front view, a left side view, a right side
view, a top view, and a bottom view in a state in which Application
Example 5 is closed.
[0067] FIG. 35B is a front view and a side view in a state in which
Application Example 5 is opened.
[0068] FIG. 36 is a sectional view illustrating a device
configuration according to another modification example.
DETAILED DESCRIPTION
[0069] Some embodiments of the present technology will be described
detail below referring to the accompanying drawings. It is to be
noted that description will be given in the following order.
[0070] 1. First Embodiment (Example in which an insulating layer is
configured of two layers to form an overhang)
[0071] 2. Modification Example 1 (Example in which an overhang is
formed with use of an oxide layer formed in a surface layer of a
first electrode)
[0072] 3. Modification Example 2 (Example in which a surface of a
first electrode is selectively removed to form an overhang).
[0073] 4. Second Embodiment (Example in which an overhang is formed
while an insulating layer between first electrodes is
planarized)
[0074] 5. Modification Example 3 (Another example of
planarization)
[0075] 6. Application Examples
First Embodiment
Configuration
[0076] FIG. 1 illustrates a configuration of a display unit (a
display unit 1) according to a first embodiment of the present
technology. The display unit 1 is an organic EL display unit, and a
plurality of organic EL devices 10R, 10G, and 10B are arranged as
pixels in a matrix form in a display region 110 of a substrate 11.
The organic EL devices 10R, 10G, and 10B emit red light (with a
wavelength of about 620 nm to about 750 nm), green light (with a
wavelength of about 495 nm to about 570 nm), and blue light (with a
wavelength of about 450 nm to about 495 nm), respectively. A signal
line drive circuit 120 and a scanning line drive circuit 130 for
image display are provided to a periphery of the display region
110.
[0077] An active drive circuit (a pixel drive circuit 140) is
provided in the display region 110. As illustrated in FIG. 2, the
pixel drive circuit 140 includes a drive transistor Tr1 and a write
transistor Tr2, and a capacitor Cs is provided between the
transistors Tr1 and Tr2. The organic EL device 10R (or the organic
EL device 10G or 10B) is connected in series to the transistor Tr1
between a first power supply line (Vcc) and a second power supply
line (GND). The signal line drive circuit 120 supplies an image
signal to a source electrode of the transistor Tr2 through a
plurality of signal lines 120A arranged along a column direction.
The scanning line drive circuit 130 sequentially supplies a
scanning signal to a gate electrode of the transistor Tr2 through a
plurality of scanning lines 130A arranged along a row
direction.
[0078] FIG. 3 illustrates a sectional configuration of the display
unit illustrated in FIG. 1. It is to be noted that FIG. 3
illustrates respective regions corresponding to the organic EL
devices 10R, 10G, and 10B. Each of the organic EL devices 10R, 10G,
and 10B has a configuration in which a drive circuit layer 12
including the above-described pixel drive circuit 140, a
planarization layer 13, a first electrode 14 as, for example, an
anode, an insulating layer 15, a hole injection layer (HIL) 17, an
organic layer 18 including a light-emitting layer, and a second
electrode 19 as, for example, a cathode are laminated in this order
from the substrate 11. These organic EL devices 10R, 10G, and 10B
are covered with a protective layer 20. The organic EL devices 10R,
10G, and 10B are sealed on the substrate 11 by bonding a sealing
substrate 23 to the protective layer 20 with an adhesive layer 21
in between. A color filter layer 22 is formed on a surface located
closer to the substrate 11 of the sealing substrate 23. It is to be
noted that the hole injection layer 17 in this embodiment
corresponds to a specific example of "charge injection-transport
layer" in an embodiment of the present technology.
[0079] The display unit 1 may be, for example, a so-called top
emission type organic EL display unit in which light emitted from
the organic layer 18 is extracted from the second electrode 19.
Moreover, in the display unit 1, the organic layer 18 includes a
common light-emitting layer for the organic EL devices 10R, 10G,
and 10B (pixels). Further, each of the hole injection layer 17, the
organic layer 18, and the second electrode 19 is continuously
formed in a solid film form without being patterned for each pixel.
The organic layer 18 may be configured to emit, for example, white
light, and when the white light passes through the color filter
layer 22, the color filter layer 22 may separate the white light
into, for example, light of colors RGB to emit the light of the
colors RGB. Configurations of respective components will be
described below.
[0080] The substrate 11 may be configured of, for example, glass, a
silicon (Si) wafer, a resin, or a conductive substrate. As the
conductive substrate, for example, a substrate of which a surface
is insulated by silicon oxide (SiO.sub.2), a resin, or the like may
be used.
[0081] Although not illustrated, for example, pixel transistors
such as the above-described drive transistor Tr1 and the
above-described write transistor Tr2, the capacitor Cs, and the
like may be formed in the drive circuit layer 12. Each of the pixel
transistors may be, for example, a bottom gate or a top gate thin
film transistor, and may be configured of, for example, a MOSFET
(Metal Oxide Semiconductor Field Effect Transistor).
[0082] The planarization layer 13 is configured to planarize a
surface where the drive circuit layer 12 is formed of the substrate
11. Since a fine connection hole 13A is provided to the
planarization layer 13, the planarization layer 13 may be
preferably made of a material with high pattern precision. A plug
13B made of conductive metal is embedded in the connection hole
13A. The drive transistor Tr1 of the drive circuit layer 12 is
configured to be electrically connected to the first electrode 13
through the plug 13B disposed in the connection hole 13A. Examples
of a material of the planarization layer 13 may include organic
materials such as acrylic and polyimide, and inorganic materials
such as silicon oxide (SiO.sub.2), silicon nitride (SiN.sub.x), and
silicon oxynitride (SiON).
[0083] The first electrodes 14 are provided to respective pixels so
as to be electrically isolated from one another, and also have a
function as a reflective layer. Therefore, the first electrodes 14
may preferably have highest possible reflectivity to enhance light
emission efficiency. However, when the first electrodes 14 are
formed of, for example, a metal material with high reflectivity
such as aluminum (Al), an aluminum alloy, or a silver (Ag) alloy,
in terms of hole injection barrier, it is difficult to use a
material with a high resistance value for a layer (for example, the
hole injection layer 17) in contact with the first electrodes 14.
In other words, a leak current is easily generated at a boundary
between adjacent pixels. As will be described in detail later, in
this embodiment, generation of the leak current is reduced by an
overhang provided to an opening 150 of the insulating layer 15;
therefore, a material with high reflectivity is allowed to be used
for the first electrodes 14.
[0084] Moreover, since each of the first electrodes 14 is used as
an anode, each of the first electrodes 14 may be preferably made of
a material with a high hole injection property. A thickness in a
laminate direction (hereinafter simply referred to as "thickness")
of each of such first electrodes 14 may be, for example, within a
range of about 30 nm to about 1000 nm both inclusive. Moreover, a
pitch of each of the first electrodes 14 (an interval between
adjacent first electrodes 14) may be, for example, within a range
of about 200 nm to about 1000 nm both inclusive. As a material of
the first electrodes 14, a simple substance or an alloy of a metal
element such as chromium (Cr), gold (Au), platinum (Pt), nickel
(Ni), copper (Cu), molybdenum (Mo), tungsten (W), titanium (Ti),
tantalum (Ta), or silver (Ag) may be adopted. A transparent
conductive film made of an oxide of indium and tin (ITO) or the
like may be provided to a surface of each of the first electrodes
14. The thickness of each of the first electrodes is determined as
appropriate by balance between wiring resistance and reflectivity
(surface roughness). It is to be noted that, in a case of a
so-called bottom emission type display unit, each of the first
electrodes 14 is configured of a transparent conductive film.
[0085] In addition to the above-described materials, a simple
substance or an alloy of aluminum (Al) may be used for the first
electrodes 14. In aluminum, a hole injection barrier caused by the
presence of an oxide film on a surface thereof and low work
function in spite of high reflectivity causes an issue; however,
aluminum is allowed to be used for the first electrodes 14 by
providing an appropriate hole injection layer 17. In this case,
each of the first electrodes 14 may have, for example, a
configuration in which a metal layer 14-1 made of titanium,
tungsten, copper, tantalum, molybdenum, or the like and a metal
layer 14-2 made of aluminum are laminated.
[0086] The insulating layer 15 is configured to electrically
isolate the first electrodes 14 for respective pixels from one
another, and to secure insulation between the first electrodes 14
and the second electrode 19. The insulating layer 15 has the
openings 150 facing the respective first electrodes 14, and is
provided to be put over an outer edge of each of the first
electrodes 14 from a surface (a surface facing the second electrode
19) to a side surface (an end surface). The overhang 16 is formed
at an edge of each of the openings 150.
[0087] FIG. 4A illustrates an enlarged view of a configuration
around the opening 150. The insulating layer 15 may have a
configuration in which a first insulating layer 15A and a second
insulating layer 15B are laminated in order from the first
electrode 14. The first insulating layer 15A and the second
insulating layer 15B may be made of, for example, materials allowed
to obtain etching selectivity and different from each other that
are selected from inorganic insulating materials such as silicon
oxide, silicon oxynitride, and aluminum oxide. Since, in a
manufacturing process that will be described later, the overhang 16
is easily formed into a desired shape with use of such inorganic
insulating materials, compared to organic insulating materials (for
example, a photopolymer), such inorganic insulating materials may
be preferable. In this embodiment, for example, the first
insulating layer 15A may be made of silicon nitride or silicon
oxynitride, and the second insulating layer 15B may be made of
silicon oxide. Moreover, the first insulating layer 15A may have,
for example, a thickness of about 10 nm to about 50 nm both
inclusive, and the second insulating layer 15B may have, for
example, a thickness of about 40 nm to about 90 nm both inclusive.
The thicknesses of the first insulating layer 15A and the second
insulating layer 15B are not limited; however, the thickness of the
second insulating layer 15B may be preferably larger than the
thickness of the first insulating layer 15A. In this case, since a
height h and a width d of the overhang 16 are determined mainly by
the thickness of the first insulating layer 15A, to easily cut the
hole injection layer 17 by the overhang 16, the height h may be
preferably large (in other words, the thickness of the first
insulating layer 15A may be preferably large). However, when the
thickness of the first insulating layer 15A is too large, in a
following process of evaporating the organic layer 18, a thin
portion of the organic layer 18 may be easily formed in part.
Moreover, when a total thickness of the first insulating layer 15A
and the second insulating layer 15B is too large, in the process of
evaporating the organic layer 18, deposition may be deteriorated.
Therefore, each of the thicknesses of the first insulating layer
15A and the second insulating layer 15B may be preferably within
the above-described thickness range, and may be preferably set to a
value that does not affect evaporation of the organic layer 18
while securing a thickness capable of cutting the hole injection
layer 17.
[0088] The openings 150 are configured to partition a light
emission region into light emission sub-regions corresponding to
respective pixels (the organic EL devices 10R, 10G, and 10B).
Examples of a planar shape of each of the openings 150 may include,
but not limited to, a rectangular shape, a square shape, and a
circular shape. The hole injection layer 17, the organic layer 18,
and the second electrode 19 are formed as common layers for the
organic EL devices 10R, 10G, and 10B, and are formed not only in
the openings 150 of the insulating layer 15 but also regions other
than the openings 150 (regions between pixels). However, light is
emitted only from portions facing the openings 150 of the
insulating layer 15.
[0089] In this embodiment, at the edge of each of the openings 150,
the second insulating layer 15B projects over from an end edge e1
of the first insulating layer 15A to inside of the opening 150, and
an projecting portion of the second insulating layer 15B is the
overhang 16. In other words, at the edge of each of the openings
150, the first insulating layer 15 is formed so as to position the
end edge e1 thereof behind an end edge e2 of the second insulating
layer 15B. At the overhang 16, at least the hole injection layer 17
is cut or has higher resistance (a region A illustrated in FIG.
4A).
[0090] The height h of the overhang 16 may be preferably within a
range of about 10 nm to about 50 nm both inclusive, and is equal to
the thickness of the first insulating layer 15A in this case. The
height h may be preferably set to a smallest possible value capable
of cutting the hole injection layer 17 in terms of flatness that
will be described later. The width d of the overhang 16 may be
preferably within a range of, for example, about 5 nm to about 50
nm both inclusive. However, the height h and the width d (an aspect
ratio) of the overhang 16 is not limited to the above-described
values, and may be set to values capable of cutting the hole
injection layer 17, based on thicknesses, materials, and etching
conditions of the first insulating layer 15A and the second
insulating layer 15B, a width of the opening 150, a material, a
thickness, and the like of the hole injection layer 17.
[0091] It is to be noted that a layer cut by the overhang 16 is not
limited to the hole injection layer 17, and may be a part or a
whole of the organic layer 18. For example, two layers, i.e., the
hole injection layer 17 and a hole transport layer 18A may be cut,
and the other layers of the organic layer 18 may be continuously
formed. Moreover, for example, compared to the top emission type
display unit, a so-called bottom emission type display unit has
less restrictions on the material and the thickness of the second
electrode; therefore, flexibility of a layer to be cut is high,
and, for example, the hole injection layer 17 and all layers of the
organic layer 18 may be cut.
[0092] Moreover, in a case where the hole injection layer 17 is not
formed, at least the hole transport layer 18A of the organic layer
18 on the first electrode 14 may be cut.
[0093] Further, the hole injection layer 17 may be preferably in an
entirely cut state (a discontinuous state) at the overhang 16, but
is not limited thereto, and as long as the hole injection layer 17
is in a sufficiently high resistance state, the hole injection
layer 17 may be continuously formed in part only or with an
extremely thin thickness.
[0094] Furthermore, a space S is formed between the second
insulating layer 15B and the first electrode 14 by the overhang 16;
however, a part of the hole injection layer 17 and a part of the
organic layer 18 may be formed in the space S, or the space S may
be filled with the organic layer 18.
[0095] The hole injection layer 17 and the organic layer 18 has an
identical laminate configuration in the organic EL devices 10R,
10G, and 10B irrespective of colors of light emitted from the
organic EL devices 10R, 10G, and 10B. FIG. 4B illustrates the
laminate configuration of each of the organic EL devices 10R, 10G,
and 10B. The organic layer 18 may have, for example, a
configuration in which the hole transport layer (HTL) 18A, the
light-emitting layer 18B, an electron transport layer (ETL) 18C,
and an electron injection layer (EIL) 18D are laminated in this
order from the hole injection layer 17. The hole injection layer
17, the organic layer 18, and the second electrode 19 are allowed
to be successively and collectively formed by forming the common
light-emitting layer for all pixels in a solid film form instead of
forming (pattern-forming) light-emitting layers for respective
pixel for color-coding. Moreover, such a configuration may be
applicable to, for example, an extremely small display unit with
high resolution in which an angle of field is several inches or
less and a pixel pitch is several tens of micrometers. It is to be
noted that, in this case, all of the layers of the organic layer 18
are formed without being cut at a boundary between pixels (by the
overhang 16). However, the configuration is not limited thereto,
and some or all of the layers of the organic layer 18 may be cut at
the boundary between pixels (by the overhang 16).
[0096] The hole injection layer 17 is a buffer layer to enhance
hole injection efficiency and to prevent leakage, and may have, for
example, a thickness of about 2 nm to about 10 nm both inclusive.
As will be described in detail later, the hole injection layer 17
is formed on an entire surface of the substrate 11 in a so-called
solid film form without being patterned in a manufacturing process;
however, the hole injection layer 17 is cut or has higher
resistance by the overhang 16 as described above. The hole
injection layer 17 may be made of, for example, a
hexaazatriphenylene derivative represented by Chem. 1 or Chem.
2.
##STR00001##
[0097] where R.sup.1 to R.sup.6 each are independently a
substituted group selected from a group configured of hydrogen, a
halogen, a hydroxyl group, an amino group, an arylamine group, a
substituted or unsubstituted carbonyl group with 20 or less carbon
atoms, a substituted or unsubstituted carbonyl ester group with 20
or less carbon atoms, a substituted or unsubstituted alkyl group
with 20 or less carbon atoms, a substituted or unsubstituted
alkenyl group with 20 or less carbon atoms, a substituted or
unsubstituted alkoxyl group with 20 or less carbon atoms, a
substituted or unsubstituted aryl group with 30 or less carbon
atoms, a substituted or unsubstituted heterocyclic group with 30 or
less carbon atoms, a nitrile group, a cyano group, a nitro group,
and a silyl group, and adjacent groups R.sup.m, where m=1 to 6, may
be joined together through a cyclic structure, and X.sup.1 to
X.sup.6 each are independently a carbon atom or a nitrogen
atom.
##STR00002##
[0098] The hole transport layer 18A is configured to enhance hole
transport efficiency to the light-emitting layer 18B. The
light-emitting layer 18B emits light by the recombination of
electrons and holes in response to the application of an electric
field. The electron transport layer 18C is configured to enhance
electron transport efficiency to the light-emitting layer 18B. The
electron injection layer 18D is configured to enhance electron
injection efficiency to the light-emitting layer 18B.
[0099] For example, the hole transport layer 18A may have a
thickness of about 40 nm, and may be made of
4,4',4''-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA)
or .alpha.-naphthyl phenyl diamine (.alpha.NPD).
[0100] The light-emitting layer 18B is a light-emitting layer
emitting white light by color mixing, and may have, for example, a
configuration in which a red light-emitting layer, a green
light-emitting layer, and a blue light-emitting layer that will be
described below are laminated. However, as long as the
light-emitting layer 18B emits white light, the light-emitting
layer 18D is not limited to such a laminate configuration, and may
have, for example, a configuration in which a blue light-emitting
layer and a yellow light-emitting layer are laminated, or a
configuration in which a blue light-emitting layer and an orange
light-emitting layer are laminated.
[0101] The red light-emitting layer emits red light by the
recombination of some of holes injected from the first electrode 14
and some of electrons injected from the second electrode 19 in
response to the application of an electric field. Such a red
light-emitting layer may include, for example, one or more kinds
selected from a red light-emitting material, a hole transport
material, an electron transport material, a both-charge transport
material. The red light-emitting material may be a fluorescent
material or a phosphorescent material. In this embodiment, for
example, the red light-emitting layer may have a thickness of about
5 nm, and may be made of 4,4'-bis(2,2-diphenylvinyl)biphenyl
(DPVBi) mixed with 30 wt % of
2,6-bis[(4'-methoxydiphenylamino)styryl]-1,5-dicyanonaphthalene
(BSN).
[0102] The green light-emitting layer is configured to emit green
light by the recombination of some of holes injected from the first
electrode 14 and some of electrons injected from the second
electrode 19 in response to the application of an electric field.
Such a green light-emitting layer may include, for example, one or
more kinds selected from a green light-emitting material, a hole
transport material, an electron transport material, and a
both-charge transport material. The green light-emitting material
may be a fluorescent material or a phosphorescent material. In this
embodiment, for example, the green light-emitting layer may have a
thickness of about 10 nm, and may be made of DPVBi mixed with 5 wt
% of Coumarin6.
[0103] The blue light-emitting layer is configured to emit blue
light by the recombination of some of holes injected from the first
electrode 14 and some of electrons injected from the second
electrode 19 in response to the application of an electric field.
Such a blue light-emitting layer may include, for example, one or
more kinds selected from a blue light-emitting material, a hole
transport material, an electron transport material, and a
both-charge transport material. The blue light-emitting material
may be a fluorescent material or a phosphorescent material. In this
embodiment, for example, the blue light-emitting layer may have a
thickness of about 30 nm, and may be made of DPVBi mixed with 2.5
wt % of 4,4'-bis[2-{4-(N,N-diphenylamino)phenyl}yinyl]biphenyl
(DPAVBi).
[0104] For example, the electron transport layer 18C may have a
thickness of about 20 nm, and may be made of
tris(8-hydroxyquinoline) aluminum (Alq3).
[0105] For example, the electron injection layer 18D may have a
thickness of about 0.3 nm, and may be made of LiF, Li.sub.2O, or
the like.
[0106] As will be described later, each of the organic EL devices
10R, 10G, and 10B has a resonance configuration in which the
organic layer 18 is used as a resonance section. Since a distance
from a light emission point to a reflective surface is
appropriately adjustable, the organic layer 18 may preferably have
a film thickness of about 80 nm to about 500 nm both inclusive, and
more preferably a film thickness of about 150 nm to about 350 nm
both inclusive.
[0107] The second electrode 19 is formed on an entire surface of
the organic layer 18 to be put over all of the organic EL devices
10R, 10G, and 10B. The second electrode 19 may be configured of one
of single-layer films of ITO, IZO, ZnO, InSnZnO, an MgAg alloy, Ag,
and the like, or a laminate film including two or more kinds
selected from the single-layer films. It is to be noted that, in a
case of the bottom emission type display unit, materials similar to
those listed as the material of the above-described first electrode
14 may be used for the second electrode 19.
[0108] The protective layer 20 may be made of silicon nitride,
silicon oxide, a metal oxide, or the like. The adhesive layer 21
may be made of, for example, a thermosetting resin or an
ultraviolet curable resin.
[0109] The sealing substrate 23 may be made of a material such as
glass transparent to light emitted from the organic EL devices 10R,
10G, and 10B, and the color filter layer 22 is formed on one
surface of the sealing substrate 23.
[0110] The color filter layer 22 is configured to extract white
light emitted from each of the organic EL devices 10R, 10G, and 10B
as red light, green light, or blue light in each pixel. The color
filter layer 22 may include, for example, a red filter layer 22R
facing the organic EL device 10R, a green filter layer 22G facing
the organic EL device 10G, and a blue filter layer 22B facing the
organic EL device 10B. Moreover, a light-shielding layer BM is
formed in regions between the red filter layer 22R, the green
filter layer 22G, and the blue filter layer 22B, i.e., regions
between pixels. The light-shielding layer BM may be formed as
necessary, and may not be formed.
[0111] The color filter layer 22 may be provided to any one of a
light-incident surface (located closer to the device) and a
light-exit surface of the sealing substrate 21; however, the color
filter layer 22 may be preferably provided to the light-incident
surface of the sealing substrate 21, because the color filter layer
22 is not exposed to a surface, and is allowed to be protected by
the adhesive layer 21. Moreover, since a distance between the
light-emitting layer 18B and the color filter layer 22 is narrowed,
light emitted from the light-emitting layer 18B is allowed to be
prevented from entering an adjacent filter layer of another color
to cause color mixing.
[0112] For example, the above-described display unit 1 may be
manufactured as follows. FIGS. 5 to 10 illustrate an example of
processes of manufacturing the display unit 1 according to this
embodiment.
[Manufacturing Method]
[0113] First, as illustrated in FIG. 5, the drive circuit layer 12
including the pixel drive circuit 140 is formed on the substrate 11
made of the above-described material by a known MOS process, and
then, an entire surface of the drive circuit layer 12 is coated
with, for example, a photopolymer as an organic material of the
above-described materials of the planarization layer 13. The
photopolymer is exposed and developed, and then is patterned into a
predetermined shape to form the planarization layer 13. The
connection hole 13A is formed simultaneously with patterning, and
then a conductive material is embedded in the connection hole 13A
to form the plug 13B.
[0114] After that, the metal layers 14-1 and 14-2 made of, for
example, the above-described materials are formed in this order by,
for example, a sputtering method, and then, for example, wet
etching is performed to form the first electrodes 14 separated for
the respective organic EL devices 10R, 10G, and 10B (respective
pixels).
[0115] Next, the insulating layer 15 including the above-described
opening 150 and the above-described overhang 16 is formed. More
specifically, first, as illustrated in FIG. 6A, the first
insulating layer 15A and the second insulating layer 15B are
laminated in this order on the entire surface of the substrate 11.
At this time, for example, a film of SiON or SiN as the first
insulating layer 15A and, for example, a film of SiO.sub.2 as the
second insulating layer 15B are formed by, for example, a CVD
(Chemical Vapor Deposition) method so as to have the
above-described thicknesses.
[0116] Next, as illustrated in FIG. 6B, only the second insulating
layer 15B of the first insulating layer 15A and the second
insulating layer 15B that are laminated is selectively removed by
etching with use of, for example, a photolithography method to form
an opening 150a in the second insulating layer 15B. More
specifically, formation of a film of a photoresist (not
illustrated) and exposure (patterning) are performed on the second
insulating layer 15B. After that, the second insulating layer 15B
is processed to a surface of the first insulating layer 15A with
use of a condition allowed to obtain etching selectivity between
the first insulating layer 15A and the second insulating layer 15G
by, for example, anisotropic (or isotropic) dry etching (or wet
etching). After the second insulating layer 15B is processed, the
photoresist is removed.
[0117] Next, as illustrated in FIG. 6C, an exposed portion of the
first insulating layer 15A is selectively removed to form the
opening 150. At this time, the first insulating layer 15A is
processed to a surface of the first electrode 14 with use of a
condition allowed to obtain etching selectivity between the first
insulating layer 15A and the second insulating layer 15B by, for
example, isotropic dry etching or isotropic wet etching. Thus,
while the opening 150 is formed, the overhang 16 is allowed to be
formed at the edge of the opening 150 by positioning the end edge
e1 of the first insulating layer 15A behind the end edge e2 of the
second insulating layer 15B.
[0118] After that, as illustrated in FIG. 7, the hole injection
layer 17 made of the above-described material with the
above-described thickness is formed on the entire surface of the
substrate 11 by, for example, a vacuum deposition method, a
sputtering method, or a coating method such as a spin coating
method or a die coating method. At this time, the hole injection
layer 17 is formed in a state in which the hole injection layer 17
is cut by the overhang 16 formed at the opening 150 of the
insulating layer 15 or in a state in which the hole injection layer
17 is continuously formed in part only or with an extremely thin
film by the overhand 16. Thus, in this embodiment, the hole
injection layer 17 is allowed to be formed separately for each
first electrode 14 (each pixel, or each of the organic EL devices
10R, 10G, and 10B) by the overhang 16 without being patterned.
[0119] Next, as illustrated in FIG. 8, the organic layer 18 is
formed by, for example, a vacuum deposition method, a sputtering
method, or a coating method such as a spin coating method or a die
coating method. More specifically, the hole transport layer 18A,
the light-emitting layer 18B, the electron transport layer 18C, and
the electron injection layer 18D made of the above-described
materials are formed in this order on the hole injection layer 17.
At this time, a part (for example, the above-described hole
transport layer 18A) of the organic layer 18 may be cut by the
overhang 16; however, in this case, a state in which the entire
organic layer 18 is continuously formed without being cut is
illustrated.
[0120] Next, as illustrated in FIG. 9, the second electrode 19 made
of the above-described material is formed on the entire surface of
the substrate 11 by, for example, a vacuum deposition method, a
sputtering method, or the like. Thus, the hole injection layer 17,
the organic layer 18, and the second electrode 19 are allowed to be
successively formed on the first electrode 14 in, for example, a
vacuum atmosphere. Moreover, a device configuration in which the
hole injection layer 17, the organic layer 18, and the second
electrode 19 are formed not only in regions directly above the
first electrodes 14 but also in regions between adjacent first
electrodes 14 (between pixels) is formed. Thus, the organic EL
devices 10R, 10G, and 10B are formed.
[0121] Next, as illustrated in FIG. 10, the protective layer 20
made of the above-described material is formed on the organic EL
devices 10R, 10G, and 10B by, for example, a CVD method or a
sputtering method.
[0122] Finally, the sealing substrate 21 is bonded to the
protective layer 20 with the adhesive layer 21 in between. At this
time, the color filter layer 22 is formed on the sealing substrate
21, and the sealing substrate 21 is bonded so as to allow a surface
where the color filter layer 22 is formed of the sealing substrate
21 to face the organic EL devices 10R, 10G, and 10B. Thus, the
display unit 1 illustrated in FIGS. 1 to 3 is completed.
[Functions and Effects]
[0123] In the display unit 1 according to this embodiment, a
scanning signal is supplied from the scanning line drive circuit
130 to the gate electrode of the write transistor Tr2 in each
pixel, and an image signal is supplied from the signal line drive
circuit 120 to a retention capacitor Cs through the writing
transistor Tr2. On/off of the drive transistor Tr1 is controlled,
based on a signal supplied to and retained in the retention
capacitor Cs to inject a drive current Id to each of the organic EL
devices 10R, 10G, and 10B. Holes and electrons are recombined by
injecting the drive current Id into the light-emitting layer 18B of
the organic layer 18 through the first electrodes 14 and the second
electrode 19 to cause light emission.
[0124] When, for example, white light is emitted from the
light-emitting layer 18B in such a manner, the white light is
repeatedly reflected between the first electrode 14 and the second
electrode 19, and is extracted through the second electrode 19, the
color filter layer 22, and the sealing substrate 21. More
specifically, the white light having been emitted from the organic
layer 18 (the light-emitting layer 18B) and having passed through
the second electrode 19 is separated into, for example, light of
colors RGB by the color filter layer 22. In other words, red light,
green light, and blue light of the above-described white light
selectively pass through the red filter layer 22R in the organic EL
device 10R, the green filter layer 22G in the organic EL device
10G, and the blue filter layer 22B in the organic EL device 10B,
respectively. Thus, an image is displayed with use of a combination
of the organic EL devices 10R, 10G, and 10B emitting light of
colors R, G, and B as one pixel.
[0125] It is to be noted that, in the above-described top emission
type display unit 1, light emitted from the light-emitting layer
18B is not blocked by a TFT or the like provided to the drive
circuit layer 12; therefore, the top emission type display unit 1
is superior in light extraction efficiency to the bottom emission
type display unit.
[0126] In this case, as described above, in the display unit 1, the
organic layer 18 includes the common light-emitting layer 18B for
all pixels. Moreover, the hole injection layer 17, the organic
layer 18, and the second electrode 19 are successively formed in a
solid film form without being patterned for each pixel.
[0127] In this case, in the device configuration including such a
common light-emitting layer 18B for all pixels, the overhang 16 is
disposed at the edge of the opening 150 of the insulating layer 15,
and the hole injection layer 17 is cut or has higher resistance by
the overhang 16. In other words, when the overhang 16 is provided
to the insulating layer 15, while the hole injection layer 17, the
organic layer 18, and the second electrode 19 are successively
formed into the solid film form on the first electrode 14, the hole
injection layer 17 is electrically blocked at a boundary between
adjacent pixels.
[0128] As described above, in the display unit 1 according to this
embodiment, the insulating layer 15 having the opening 150 that
faces the first electrode 14 provided to each pixel is included,
and the overhang 16 is provided to the edge of the opening 150;
therefore, the hole injection layer 17 is allowed to be
electrically blocked at a boundary between the pixels. Accordingly,
in the device configuration including the common light-emitting
layer for all pixels, current leakage is allowed to be reduced.
[0129] Moreover, charge injection efficiency (in this case, hole
injection efficiency) is enhanced by reducing the current leakage,
and light emission efficiency is allowed to be enhanced
accordingly. Further, since current leakage to adjacent pixels is
reduced, color mixing is allowed to be reduced. In addition, light
emission (edge light emission) from the organic layer 18 formed
around an edge (a pixel end) of the opening 150 of the insulating
layer 15 is allowed to be reduced to reduce deterioration in
luminance
[0130] Further, since current leakage in the hole injection layer
17 is allowed to be reduced, the thickness of the hole injection
layer 17 is allowed to be increased; therefore, enhancement of hole
injection efficiency, and by extension to light emission efficiency
is achievable.
[0131] On the other hand, the second electrode 19 is an electrode
connecting all of the pixels to one another; therefore, it is ideal
that the second electrode 19 does not have disconnection and has
low resistance. To do so, a surface where the second electrode 19
is formed (i.e., a surface of the organic layer 18) may preferably
have a shape with less projections and less depressions, and has
high flatness, because a difference in level in a shape with
projections and depressions may cause disconnection of the second
electrode 19, and local reduction in film thickness that causes an
increase in resistance. In this embodiment, the insulating layer 15
is formed as a laminate film of the first insulating layer 15A and
the second insulating layer 15B, and two stages of etching, i.e.,
anisotropic etching and isotropic etching are performed on the
laminate film; therefore, while the opening 150 is formed, the
overhang 16 is allowed to be formed. Accordingly, the hole
injection layer 17 is allowed to be cut without forming a large
difference in level on the surface of the insulating layer 15.
Therefore, the device configuration having the above-described
overhang 16 in this embodiment contributes to prevention of
disconnection of the second electrode 19 and reduction in
resistance while reducing a leak current to the hole injection
layer 17.
[0132] Modification examples of the above-described first
embodiment and other embodiments will be described below. In the
following description, like components are denoted by like numerals
as of the above-described first embodiment and will not be further
described.
Modification Example 1
[0133] FIG. 11 illustrates a configuration around an opening of an
insulating layer of a device configuration according to
Modification Example 1. In the above-described first embodiment,
the insulating layer 15 has a two-layer configuration including the
first insulating layer 15A and the second insulating layer 15B to
form the overhang 16. This modification example differs from the
above-described first embodiment in that an insulating layer (an
insulating layer 24) includes an etching sacrificial layer (an
oxide layer 14a) formed on a surface of the first electrode 14.
More specifically, in a device configuration in this modification
example, the insulating layer 24 includes the oxide layer 14a
formed in a part located closer to the surface of the first
electrode 14 and a fifth insulating layer 15E, and the overhang 16
is formed by two stages of etching on these layers.
[0134] As with the insulating layer 15 in the above-described first
embodiment, the insulating layer 24 is configured to electrically
isolate the first electrodes 14 for respective pixels from one
another, and to secure insulation between the first electrodes 14
and the second electrode 19. Moreover, the insulating layer 24 has
the opening 150 facing each of the first electrodes 14, and the
overhang 16 is formed at the edge of the opening 150.
[0135] The oxide layer 14a is made of an oxide of metal forming the
surface of the first electrode 14, and has a thickness
substantially equal to that of the first insulating layer 15A in
the above-described first embodiment. For example, in a case where
the metal layer 14-2 in the first electrode 14 is made of aluminum,
the oxide layer 14a is made of aluminum oxide (Al.sub.2O.sub.3).
The material of the oxide layer 14a is not limited to aluminum
oxide, and alternatively, the oxide layer 14a may be made of
another metal oxide, for example, copper oxide (CuO, Cu.sub.2O),
titanium oxide (TiO.sub.2), or the like. In this modification
example, the height of the overhang 16 is determined by the
thickness of the oxide layer 14a.
[0136] The fifth insulating layer 15E may be made of a material
allowed to obtain etching selectivity with the metal oxide forming
the oxide layer 14a selected from inorganic insulating film
materials such as silicon oxide, silicon nitride, and silicon
oxynitride. For example, in this embodiment, in a case where the
oxide layer 14a is made of aluminum oxide, as the fifth insulating
layer 15E, for example, silicon oxide or silicon oxynitride may be
used. Moreover, the thickness of the fifth insulating layer 15E is
substantially equal to that of the second insulating layer 15B in
the above-described first embodiment. Although the thicknesses of
the oxide layer 14a and the fifth insulating layer 15E are not
limited, the thickness of the fifth insulating layer 15E may be
preferably larger than that of the oxide layer 14a.
[0137] In this modification example, the fifth insulating layer 15E
has a portion projecting over from an end edge (an inner wall S1)
of the oxide layer 14a at the edge of the opening 150 of the
insulating layer 24, and the projecting portion is the overhang 16.
In other words, at the edge of the opening 150, the oxide layer 14a
is formed so as to position the inner wall S1 thereof behind an end
edge e5 of the fifth insulating layer 15E. At the overhang 16, at
least the hole injection layer 17 is cut or have lower resistance
(a region A illustrated in FIG. 11).
[0138] For example, such a device configuration may be formed as
follows. First, as illustrated in FIG. 12A, as with the
above-described first embodiment, the drive circuit layer 12, the
planarization layer 13, and the first electrodes 14 are formed on
the substrate 11. After that, as illustrated in FIG. 12B, the oxide
layer 14a is formed by oxidizing a portion located closer to a
surface of the metal layer 14-2 (a portion from the surface of the
metal layer 14-2 to, for example, a thickness of about 5 nm to
about 50 nm) of the first electrode 14.
[0139] After that, as illustrated in FIG. 13A, the fifth insulating
layer 15E made of the above-described material with the
above-described thickness is formed on the entire surface of the
substrate 11 by, for example, a CVD method. Next, as illustrated in
FIG. 13B, the opening 150a is formed in the fifth insulating layer
15E by anisotropic dry etching with use of, for example, a
photolithography method. At this time, the fifth insulating layer
15E is processed to a surface of the oxide layer 14a with use of a
condition allowed to obtain etching selectivity between the fifth
insulating layer 15E and the oxide layer 14a by, for example,
anisotropic dry etching. Next, as illustrated in FIG. 13C, the
opening 150 is formed by selectively removing an exposed portion of
the oxide layer 14a. At this time, the oxide layer 14a is processed
to the surface of the first electrode 14 with use of the condition
allowed to obtain etching selectivity between the fifth insulating
layer 15E and the oxide layer 14a by, for example, isotropic dry
etching or isotropic wet etching. Thus, while the opening 150 is
formed, the overhang 16 is allowed to be formed at the edge of the
opening 150 by positioning the inner wall s1 of the oxide layer 14a
behind the end edge e5 of the fifth insulating layer 15E.
[0140] As in this modification example, the overhang 16 may be
formed with use of the oxide layer 14a formed by oxidizing the
surface of the first electrode 14 and the fifth insulating layer
15E formed on the oxide layer 14a, and even in such a case, effects
similar to those in the above-described first embodiment are
allowed to be obtained. Moreover, the overhang 16 is allowed to be
formed by performing a process of oxidizing the surface of the
first electrode 14 instead of a CVD process on an inorganic
insulating film. Therefore, there are advantages that the number of
CVD processes is allowed to be reduced, compared to the
above-described first embodiment, and manufacturing processes are
allowed to be simplified.
Modification Example 2
[0141] FIG. 14 illustrates a configuration around an opening of an
insulating layer of a device configuration according to
Modification Example 2. In the above-described Modification Example
1, the overhang 16 is formed with use of the oxide layer 14a on the
surface of the first electrode 14; however, as in this modification
example, the overhang 16 may be formed by directly processing the
first electrode 14.
[0142] More specifically, in this modification example, a
depression 14b is formed in the surface of the first electrode 14
(the surface of the metal layer 14-2), and the fifth insulating
layer 15E is provided so as to overlap a part of the depression 14b
on the first electrode 14. The fifth insulating layer 15 has a role
similar to the above-described insulating layers 15 and 24.
[0143] In the above-described configuration, the fifth insulating
layer 15E has a portion projecting over from an inner wall s2 of
the depression 14b to inside of the opening 150 at the edge of the
opening 150 of the fifth insulating layer 15E, and the projecting
portion is the overhang 16. In other words, at the edge of the
opening 150, the depression 14b is formed so as to position the
inner wall s2 thereof behind the end edge e5 of the fifth
insulating layer 15E. At the overhang 16, at least the hole
injection layer 17 is cut or has lower resistance (the region A
illustrated in FIG. 14).
[0144] For example, this device configuration may be formed as
follows. First, as illustrated in FIG. 15A, as with the
above-described first embodiment, after the drive circuit layer 12,
the planarization layer 13, and the first electrodes 14 are formed
on the substrate 11, as with the above-described Modification
Example 1, the fifth insulating layer 15E is formed on the entire
surface of the substrate 11 by, for example, a CVD method. Next, as
illustrated in FIG. 15B, the opening 150a is formed in the fifth
insulating layer 15E by, for example, anisotropic dry etching. At
this time, the fifth insulating layer 15E is processed to the
surface of the first electrode 14 with use of a condition allowed
to obtain etching selectivity between the fifth insulating layer
15E and the first electrode 14 (for example, aluminum) by
anisotropic dry etching with use of, for example, a
photolithography method. Next, as illustrated in FIG. 15C, the
opening 150 is formed by selectively removing an exposed portion
located closer to the surface of first electrode 14. At this time,
the first electrode 14 is processed with use of the condition
allowed to obtain etching selectivity between the fifth insulating
layer 15E and the first electrode 14 by, for example, isotropic wet
etching. Thus, while the opening 150 is formed, the depression 14b
is formed, and the overhang 16 is allowed to be formed at the edge
of the opening 150 by positioning the inner wall s2 of the
depression 14b behind the end edge e5 of the fifth insulating layer
15E.
[0145] FIG. 16A illustrates a relationship between processing time
(seconds) and the height h of the overhang 16 (=a depth of the
depression 14b) in a case where the depression 14b is formed by
processing the first electrode 14 (aluminum) by isotropic dry
etching. Moreover, FIG. 16B illustrates a relationship between the
above-described processing time and the width d of the overhang 16.
It is to be noted that FIGS. 16A and 16B illustrate results of
processing that are the same as each other, and "left", "center",
and "right" in the diagrams indicate positions in a wafer plane.
There is correlation between the processing time and the aspect
ratio of the overhang 16, and this is applicable to not only this
modification example, but also the above-described first embodiment
and the like.
Second Embodiment
Configuration
[0146] FIG. 17 illustrates a sectional configuration of a display
unit (a display unit 2) according to a second embodiment of the
present technology. In the above-described first embodiment, the
insulating layer 15 is configured of a laminate film of the first
insulating layer 15A and the second insulating layer 15B; however,
the, an insulating layer (an insulating layer 25) in this
embodiment differs from the insulating layer 15 in the
above-described first embodiment in that the insulating layer 25 is
configured of a three-layer laminate film, and a region between
pixels in the insulating layer 25 is planarized.
[0147] As with the insulating layer 15 in the above-described first
embodiment, the insulating layer 25 is configured to electrically
isolate the first electrodes 14 for respective pixels from one
another, and to secure insulation between the first electrodes 14
and the second electrode 19. Moreover, the insulating layer 25 has
the opening 150 facing each of the first electrodes 14, and the
overhang 16 is formed at the edge of the opening 150.
[0148] FIG. 18 is an enlarged view of a configuration around the
opening 150 and a region between the first electrodes 14 (between
pixels). In this embodiment, a third insulating layer 15C may be
embedded in, for example, a region between adjacent first
electrodes 14. The first insulating layer 15A and the second
insulating layer 15B that are described in the above-described
first embodiment are laminated in this order on the third
insulating layer 15C and the first electrodes 14, and a portion of
the second insulating layer 15B forms the overhang 16. Thus, in
this embodiment, the insulating layer 25 is a three-layer film
configured of the first insulating layer 15A, the second insulating
layer 15B, and the third insulating layer 15C. In such a
configuration, in a region directly above the first electrode 14,
the opening 150 and the overhang 16 are formed by performing
etching similar to that in the above-described first embodiment on
the first insulating layer 15A and the second insulating layer 15B.
On the other hand, in a region between the first electrodes 14
(between pixels), a surface of the third insulating layer 15C is
planarized to be located at a level substantially equal to the
level of the surface of the first electrode 14, and the first
insulating layer 15A and the second insulating layer 15B are
laminated on the third insulating layer 15C. A thickness of the
third insulating layer 15C is substantially equal to that of the
first electrode 14. A material forming the third insulating layer
15C is not specifically limited; however, examples of the material
of the third insulating layer 15C may include inorganic insulating
materials such as silicon oxide, silicon nitride, and silicon
oxynitride. Moreover, the third insulating layer 15C may be formed
by a typical plasma CVD method, or may be a so-called HDP film
formed by a high density plasma CVD method.
[Manufacturing Method]
[0149] For example, the display unit 2 may be formed as follows.
FIGS. 19 to 22 illustrate an example of processes of manufacturing
the display unit 2 according to this embodiment.
[0150] First, as illustrated in FIG. 19, as with the
above-described first embodiment, the drive circuit layer 12, the
planarization layer 13, and the first electrodes 14 are formed on
the substrate 11.
[0151] After that, the insulating layer 25 is formed. More
specifically, first, as illustrated in FIG. 20A, the third
insulating layer 15C made of the above-described material is formed
by, for example, a CVD method or the like. At this time, the third
insulating layer 15C is formed on the entire surface of the
substrate 11 so as to have a thickness thick enough for the third
insulating layer 15C to be embedded in a depression region between
the first electrodes 14 and to be put over the first electrodes
14.
[0152] Next, as illustrated in FIG. 20B, a surface of the third
insulating layer 15C is polished by, for example, a CMP (Chemical
Mechanical Polishing) method to be planarized. At this time,
polishing starts from the surface (a top surface) of the third
insulating layer 15C, and when a surface (a top surface) of the
first electrode 14 is exposed, the polishing is finished with use
of, for example, EPD (End Point Detection) or the like.
[0153] Alternatively, there is a characteristic that, in a case
where the third insulating layer 15C is formed by, for example, a
HDP method, flatness is obtained by forming the third insulating
layer 15C with a large thickness. Therefore, for example, after, in
a process in FIG. 20A, the third insulating layer 15C is formed
with a thickness large enough to obtain sufficient flatness, in a
process in FIG. 20B, the third insulating layer 15C may be etched
back until the third insulating layer 15C has a thickness
substantially equal to that of the first electrode 14.
[0154] Thus, the third insulating layer 15C is formed so as to be
embedded in the region between the first electrodes 14 and to
planarize the region between the first electrodes 14.
[0155] After that, as illustrated in FIG. 20C, as with the
above-described first embodiment, the first insulating layer 15A
and the second insulating layer 15B are formed in this order on the
entire surface of the substrate 11. Next, as illustrated in FIG.
20D, as with the above-described first embodiment, the opening 150a
is formed in the second insulating layer 15B by anisotropic dry
etching with use of, for example, a photolithography method. Next,
as illustrated in FIG. 20E, as with the above-described first
embodiment, while the opening 150 is formed by, for example,
isotropic etching, the overhang 16 is formed at the edge of the
opening 150.
[0156] After that, as illustrated in FIG. 21, as with the
above-described first embodiment, the hole injection layer 17 is
formed. Even in this embodiment, the hole injection layer 17 is
allowed to be formed in a state in which the hole injection layer
17 is cut by the overhang 16 or in a state in which the hole
injection layer 17 is continuously formed in part only or with an
extremely thin film by the overhang 16; therefore, the hole
injection layer 17 is allowed to be formed separately for each
first electrode 14 without being patterned.
[0157] Next, as illustrated in FIG. 22, as with the above-described
first embodiment, the organic layer 18 and the second electrode 19
are formed in this order. Thus, the organic EL devices 10R, 10G,
and 10B are formed. Moreover, although not illustrated, as with the
above-described first embodiment, after the protective layer 20 is
formed, the sealing substrate 21 and the color filter layer 22 are
bonded to the protective layer 20 with the adhesive layer 21 in
between. Thus, the display unit 2 illustrated in FIG. 17 is
completed.
[0158] As described above, even in this embodiment, the device
configuration in which the hole injection layer 17, the organic
layer 18, and the second electrode 19 are formed on not only the
region directly above each of the first electrodes 14 but also the
region between adjacent first electrodes 13 is formed. Even in such
a device configuration, in this embodiment, as described above, the
region between the first electrodes 14 is planarized by the
insulating layer 25 (more specifically, the third insulating layer
15C); therefore, flatness of the hole injection layer 17 and the
organic layer 18 continuously formed in a solid film form is
improved more than in the first embodiment. Therefore, in this
embodiment, a case where, for example, an MgAg alloy is evaporated
in a process of forming the second electrode 19, or the like,
prevention of disconnection of the second electrode 19 and
reduction in resistance are achievable more easily than in the
above-described first embodiment.
[Functions and Effects]
[0159] Even in the display unit 2 according to this embodiment, as
with the above-described first embodiment, white light emitted from
the light-emitting layer 18B of the organic layer 18 is separated
into, light of colors by the color filter 22 to be extracted as
color light of R, G, or B. Thus, an image is displayed. In this
embodiment, in the device configuration including such a common
light-emitting layer 18B for all of the pixels, the hole injection
layer 17 is cut or has higher resistance by the overhang 16
provided to the opening 150 of the insulating layer 25, and is
electrically blocked between the adjacent pixels. Therefore,
effects similar to those in the above-described first embodiment
are allowed to be obtained.
[0160] Moreover, as described above, it is ideal that flatness in
the second electrode 19 is high, and in this embodiment, in the
second electrode 19, flatness is high and projections and
depressions are reduced; therefore, variation in film thickness
caused by a difference in level is reduced. More specifically, a
difference in level between the first electrodes 14 may be reduced
to, for example, about 0 nm to about 70 nm. As a result, sheet
resistance in the second electrode 19 is reduced, and charge
(electron in this case) injection efficiency is enhanced.
[0161] On the other hand, the film thickness of the second
electrode 19 is preferably as thin as possible in terms of light
extraction; however, there is a possibility that resistance is
increased by reduction in thickness. In this embodiment, sheet
resistance is allowed to be reduced by flatness of the second
electrode 19; therefore, reduction in thickness of the second
electrode 19 is allowable. Accordingly, reduction in thickness is
achievable without increasing resistance, thereby resulting in an
improvement in light emission characteristics.
[0162] It is to be noted that, in the above-described second
embodiment, the device configuration in which the overhang 16 is
formed in the insulating layer 25 and the region between pixels are
planarized is described; however, a configuration and effects
specific to a planarized portion of the insulating layer 25 in the
above description are applicable to a device configuration in which
the overhang 16 is not formed (for example, a device configuration
illustrated in FIG. 23).
[0163] In the device configuration illustrated in FIG. 23, an
insulating layer (an insulating layer 25a) configured to
electrically isolate the first electrodes 14 for respective pixels
from one another is configured of the third insulating layer 15C
that is configured to planarize a region between the first
electrodes 14 and an upper insulating layer 151 that is formed on
the third insulating layer 15C. For example, as with the
above-described second embodiment, the insulating layer 25a may be
formed on the entire surface of the substrate 11 by, for example, a
CVD method after forming layers until the third insulating layer
15C (after performing polishing by CMP). After that, an opening 152
is formed in the upper insulating layer 151 by etching with use of,
for example, a photolithography method. It is to be noted that
processes other than a process of forming the insulating layer 25a
are similar to those in the above-described first embodiment.
[0164] The hole injection layer 17, the organic layer 18, and the
second electrode 19 are formed in this order on the insulating
layer 25a. With such a configuration, flatness of the second
electrode 19 is enhanced, and the above-described prevention of
disconnection and the above-described reduction in resistance are
achievable.
[0165] However, as with the above-described second embodiment,
since this configuration in which the insulating layer 25 has the
overhang 16 and is planarized between pixels is allowed to achieve
prevention of disconnection of the second electrode and reduction
in resistance while reducing current leakage, this configuration is
superior in light emission efficiency and device
characteristics.
Modification Example 3
[0166] FIG. 25 illustrates a sectional configuration of a display
unit according to Modification Example 3. FIG. 26 is an enlarged
view of a configuration around the opening 150 and a region between
the first electrodes 14 (between pixels). In the above-described
second embodiment, the thickness of the third insulating layer 15C
in the insulating layer 25 is substantially equal to that of the
first electrode 14; however, as in an insulating layer (an
insulating layer 26), the thickness of the third insulating layer
15C may be larger than that of the first electrode 14.
[0167] The insulating layer 26 has a role similar to that of the
insulating layers 15 and 25 in the above-described embodiments, and
includes the opening 150 facing each of the first electrodes 14.
The overhang 16 is formed at the edge of the opening 150. The
insulating layer 26 has a two-layer configuration in which a fourth
insulating layer 15D is laminated on the third insulating layer 15C
in a region between the first electrodes 14. In this modification
example, the third insulating layer 15C has a larger thickness than
the first electrode 14, and is formed so as to be put over a side
surface and a part of a top surface of the second electrode 14. In
this modification example, with such a configuration, the height h
of the overhang 16 is determined by a difference (for example,
about 10 nm to about 50 nm) in thickness between the third
insulating layer 15C and the first electrode 14.
[0168] The fourth insulating layer 15D may be made of a material
allowed to obtain etching selectivity with a material forming the
third insulating layer 15C selected from inorganic insulating film
materials such as silicon oxide, silicon nitride, and silicon
oxynitride. Moreover, the fourth insulating layer 15D may have, for
example, a thickness of about 40 nm to about 90 nm both inclusive.
The thicknesses of the third insulating layer 15C and the fourth
insulating layer 15D are not limited; however, the thickness of the
fourth insulating layer 15D may be preferably larger than that of
the third insulating layer 15C.
[0169] In this modification example, at the edge of the opening 150
of the insulating layer 26, the fourth insulating layer 15D
projects over from the end edge e3 of the third insulating layer
15C, and an projecting portion of the fourth insulating layer 15D
is the overhang 16. In other words, at the edge of the opening 150,
the third insulating layer 15C is formed so as to position the end
edge e3 thereof behind an end edge e4 of the fourth insulating
layer 15D. At the overhang 16, at least the hole injection layer 17
is cut or has lower resistance.
[0170] For example, such an insulating layer 26 may be formed as
follows. For example, as illustrated in FIG. 27A, the third
insulating layer 15C is formed on the entire surface of the
substrate 11 so as to have a thickness thick enough for the third
insulating layer 15C to be embedded in a depression region between
the first electrodes 14 and to be put over the first electrodes 14.
Next, as illustrated in FIG. 27B, the surface of the third
insulating layer 15C is polished by, for example, a CMP (Chemical
Mechanical Polishing) method to be planarized. At this time,
polishing start from the surface (the top surface) of the third
insulating layer 15C, and the polishing is finished after a lapse
of predetermined time. At this time, processing time is adjusted so
as to allow the third insulating layer 15C to remain with a
predetermined thickness t (=the height h) on the first electrodes
14. It is to be noted that, in a case where the third insulating
layer 15C is formed by a HDP method, processing to allow the third
insulating layer 15C to remain with the above-described thickness t
may be performed by, for example, etching back such as dry
etching.
[0171] As described above, in this modification example, the third
insulating layer 15C is formed with the thickness t on the first
electrode 14 while planarizing the region between the first
electrodes 14.
[0172] After that, as illustrated in FIG. 28A, the fourth
insulating layer 15D made of the above-described material with the
above-described thickness is formed by, for example, a CVD method.
Next, as illustrated in FIG. 28B, an opening is formed in the
fourth insulating layer 15D by anisotropic dry etching with use of,
for example, a photolithography method. Next, the opening 150 is
formed by performing, for example, isotropic dry etching or
isotropic wet etching on an exposed portion of the third insulating
layer 15C, and the overhang 16 is formed at the edge of the opening
150. Thus, the insulating layer 26 is formed.
[0173] As with this modification example, when the third insulating
layer 15C is planarized, the third insulating layer 15C may remain
with a predetermined thickness on the first electrode 14, and the
overhang 16 may be formed with use of the remaining third
insulating layer 15C. In such a case, while flatness between the
first electrodes 14 is enhanced, a leak current is allowed to be
reduced. Therefore, effects similar to those in the above-described
second embodiment are allowed to be obtained. Moreover, since the
insulating layer 26 is configured of two layers, compared to the
above-described second embodiment in which the insulating layer 26
is configured of three layers, the number of processes is allowed
to be reduced.
[0174] It is to be noted that a configuration, a forming process,
and effects specific to the planarized portion of the insulating
layer 26 in the above-described Modification Example 3 are
applicable to a device configuration in which the overhang 16 is
not formed (for example, a device configuration illustrated in FIG.
29).
[0175] In the device configuration illustrated in FIG. 29, only the
third insulating layer 15C described in the above-described
Modification Example 3 electrically isolates the first electrodes
14 for respective pixels from one another, and planarizes the
region between the first electrodes 14. Such a device configuration
is allowed to be formed by forming the third insulating layer 15C
in, for example, a similar manner to the above-described
Modification Example 3, and then forming the hole injection layer
17, the organic layer 18, and the second electrode 19 in this order
in a similar manner to the above-described first embodiment. Thus,
flatness of the second electrode 19 is allowed to be enhanced, and
the above-described prevention of disconnection and the
above-described reduction in resistance are achievable.
APPLICATION EXAMPLES
[0176] Any of the display units according to the above-described
embodiments and the above-described modification examples is
incorporated into various electronic apparatuses such as
Application Examples 1 to 5 that will be described later as, for
example, a module illustrated in FIG. 30. In particular, the
display units according to the above-described embodiments and the
above-described modification examples are suitable for electronic
apparatuses, such as a viewfinder of a video camera and a
single-lens reflex camera and a head-mounted display, that demand
high resolution and is used by zooming an image before eyes. In
this module, for example, a region 210 exposed from the sealing
substrate 21 and the adhesive layer 21 may be provided on a side of
the substrate 11, and an external connection terminal (not
illustrated) may be formed in the region 210 by extending wiring of
the signal line drive circuit 120 and the scanning line drive
circuit 130. In the external connection terminal, a flexible
printed circuit (FPC) 220 for signal input and output may be
provided.
Application Example 1
[0177] FIG. 31 illustrates an appearance of a television. The
television may include, for example, an image display screen
section 300 including a front panel 310 and a filter glass 320, and
the image display screen section 300 is configured of any one of
the display units according to the above-described embodiments and
the like.
Application Example 2
[0178] FIGS. 32A and 32B illustrate an appearance of a digital
camera. The digital camera may include, for example, a
light-emitting section 410 for a flash, a display section 420, a
menu switch 430, and a shutter button 440, and the display section
420 is configured of any one of the display units according to the
above-described embodiments and the like.
Application Example 3
[0179] FIG. 33 illustrates an appearance of a notebook personal
computer. The notebook personal computer may include, for example,
a main body 510, a keyboard 520 for operation of inputting
characters and the like, and a display section 530 for displaying
of an image, and the display section 530 is configured of any one
of the display units according to the above-described embodiments
and the like.
Application Example 4
[0180] FIG. 34 illustrates an appearance of a video camera. The
video camera may include, for example, a main section 610, a lens
620 provided on a front surface of the main section 610 and for
shooting of an image of an object, a shooting start/stop switch
630, and a display section 640, and the display section 640 is
configured of any one of the display units according to the
above-described embodiments and the like.
Application Example 5
[0181] FIGS. 35A and 25B illustrate an appearance of a cellular
phone. The cellular phone may be formed by connecting, for example,
a top-side enclosure 710 and a bottom-side enclosure 720 to each
other by a connection section (hinge section) 730, and the cellular
phone may include a display 740, a sub-display 750, a picture light
760, and a camera 770. The display 740 or the sub-display 750 is
configured of any one of the display units according to the
above-described embodiments and the like.
[0182] Although the present technology is described referring to
the embodiments and the modification examples, the present
technology is not limited thereto, and may be variously modified.
For example, in the above-described embodiments and the like, the
insulating layer that electrically isolates the first electrodes 14
for respective pixels from one another is configured of a laminate
film, and the overhang is formed by performing etching or the like
in two stages; however, as a technique of forming the overhang is
not limited to the above-described technique, and any of various
techniques may be used. For example, as illustrated in FIG. 36, the
edge of the opening 150 of an insulating layer 31 is formed in a
tapered shape to provide a space S between the insulating layer 31
and the first electrode 14. Thus, the overhang 30 is allowed to be
formed. Such an inverse tapered shape may be formed by, for
example, dry etching.
[0183] Moreover, in the above-described embodiments and the like, a
case where the first electrode 14 serves as the anode, and the
second electrode 19 serves as the cathode is described; however,
the first electrode 14 may serve as the cathode, and the second
electrode 19 may serve as the anode. In this case, since the
electron injection layer and the electron transport layer are
formed on the first electrode 14, the electron injection layer or
both of the electron injection layer and the electron transport
layer are cut or have higher resistance by the overhang of the
insulating layer.
[0184] Further, the material and thickness of each layer are not
limited to those described in the above-described embodiments and
the like, and each layer may be made of any other material with any
other thickness.
[0185] It is to be noted that the present technology may have the
following configurations.
[0186] (1) A display unit including, in order from a substrate:
[0187] a plurality of first electrodes provided to respective
pixels;
[0188] an insulating layer having an opening facing each of the
first electrodes and having an overhang at an edge of the
opening;
[0189] a charge injection-transport layer being cut or having
higher resistance at the overhang of the insulating layer to
exhibit one or both of a charge injection property and a charge
transport property;
[0190] an organic layer including one light-emitting layer or a
plurality of light-emitting layers common to all of the pixels;
and
[0191] a second electrode formed on an entire surface of the
organic layer,
[0192] the first electrodes, the insulating layer, the charge
injection-transport layer, the organic layer, and the second
electrode being disposed in this order from a substrate side.
[0193] (2) The display unit according to (1), in which
[0194] the insulating layer includes a first inorganic layer and a
second inorganic layer that are laminated in this order from the
first electrode side, and
[0195] the overhang is a portion of the second inorganic layer, the
portion projecting over from an end edge of the first inorganic
layer toward inside of the opening at the edge of the opening.
[0196] (3) The display unit according to (2), in which the first
and second inorganic layers are made of materials that are allowed
to obtain etching selectivity and are different from each
other.
[0197] (4) The display unit according to (2) or (3), in which a
thickness of the second inorganic layer is larger than that of the
first inorganic layer.
[0198] (5) The display unit according to any one of (1) to (4), in
which the insulating layer includes a third inorganic layer that is
embedded in a region between the first electrodes and is
planarized.
[0199] (6) The display unit according to (5), in which
[0200] a thickness of the third inorganic layer is substantially
equal to that of the first electrode,
[0201] the insulating layer includes a first inorganic layer and a
second inorganic layer laminated in this order from the first
electrode side on the third inorganic layer, and
[0202] the overhang is a portion of the second inorganic layer, the
portion projecting over from an end edge of the first inorganic
layer toward inside of the opening at an edge of the opening.
[0203] (7) The display unit according to (5), in which
[0204] a thickness of the third inorganic layer is larger than that
of the first electrode,
[0205] the insulating layer includes a fourth inorganic layer
laminated on the third inorganic layer, and
[0206] the overhang is a portion of the fourth inorganic layer, the
portion projecting over from an end edge of the third inorganic
layer toward inside of the opening at an edge of the opening.
[0207] (8) The display unit according to any one of (1) to (7), in
which
[0208] each of the first electrodes includes a metal oxide layer
forming a part of the insulating layer,
[0209] the insulating layer includes a fifth inorganic layer on the
first electrodes, and
[0210] the overhang is a portion of the fifth inorganic layer, the
portion projecting over from an inner wall of the metal oxide layer
toward inside of the opening at an edge of the opening.
[0211] (9) The display unit according to any one of (1) to (8), in
which
[0212] each of the first electrodes has a depression on a surface
thereof,
[0213] the insulating layer includes a fifth inorganic layer on the
first electrodes, and
[0214] the overhang is a portion of the fifth inorganic layer, the
portion projecting over from an inner wall of the depression toward
inside of the opening at an edge of the opening.
[0215] (10) The display unit according to any one of (1) to (9), in
which the charge injection-transport layer includes a hole
injection layer.
[0216] (11) The display unit according to any one of (1) to (10),
in which the organic layer is formed by laminating the plurality of
light-emitting layers, and the organic layer emits white light by
mixing of light of colors emitted from the respective
light-emitting layers.
[0217] (12) A method of manufacturing a display unit, the method
including:
[0218] forming a plurality of first electrodes provided to
respective pixels on a substrate;
[0219] forming an insulating layer on the plurality of first
electrodes, the insulating layer having an opening facing each of
the first electrodes and having an overhang at an edge of the
opening;
[0220] forming a charge injection-transport layer on the insulating
layer, the charge-injection-transport layer being cut or having
higher resistance at the overhang of the insulating layer to
exhibit one or both of a charge injection property and a charge
transport property;
[0221] forming, on the charge injection-transport layer, an organic
layer including a light-emitting layer common to all of the pixels;
and
[0222] forming a second electrode on an entire surface of the
organic layer.
[0223] (13) The method of manufacturing the display unit according
to (12), in which, in the forming of the insulating layer, a first
inorganic layer and a second inorganic layer are formed in this
order on the plurality of the first electrodes, and in a selective
region corresponding to each of the first electrodes, the second
inorganic layer is etched, and then isotropic etching is performed
on the first inorganic layer to form the opening with the
overhang.
[0224] (14) The method of manufacturing the display unit according
to (12), in which in the forming of the insulating layer, a third
inorganic layer is formed on the plurality of first electrodes to
be embedded in a region between the first electrodes, and the third
inorganic layer is planarized.
[0225] (15) The method of manufacturing the display unit according
to (14), in which
[0226] the third inorganic layer is planarized until a surface of
each of the first electrodes is exposed,
[0227] after the third inorganic layer is planarized, a first
inorganic layer and a second inorganic layer are formed in this
order, and
[0228] in a selective region corresponding to each of the first
electrodes, the second inorganic layer is etched, and then
isotropic etching is performed on the first inorganic layer to form
the opening with the overhang.
[0229] (16) The method of manufacturing the display unit according
to (14), in which
[0230] the third inorganic layer is planarized to remain with a
predetermined thickness on the first electrodes,
[0231] a fourth inorganic layer is formed on the planarized third
inorganic layer, and
[0232] in a selective region corresponding to each of the first
electrodes, the fourth inorganic layer is etched, and then
isotropic etching is performed on the third inorganic layer to form
the opening with the overhang.
[0233] (17) The method of manufacturing the display unit according
to (12), in which
[0234] in the forming of the first electrodes, a metal oxide layer
is formed by oxidizing a surface of each of the first electrodes,
and
[0235] in the forming of the insulating layer, a fifth inorganic
layer is formed on the plurality of first electrodes, and in a
selective region corresponding to each of the first electrodes, the
fifth inorganic layer is etched, and then isotropic etching is
performed on the metal oxide layer to form the opening with the
overhang.
[0236] (18) The method of manufacturing the display unit according
to (12), in which, in the forming of the insulating layer, a fifth
inorganic layer is formed on the plurality of first electrodes, and
in a selective region corresponding to each of the first
electrodes, the fifth inorganic layer is etched, and then isotropic
etching is performed on each of the first electrodes to form a
depression, thereby forming the opening with the overhang.
[0237] (19) The method of manufacturing the display unit according
to (12), in which the charge injection-transport layer includes a
hole injection layer.
[0238] (20) An electronic apparatus provided with a display unit,
the display unit including, in order from a substrate:
[0239] a plurality of first electrodes provided to respective
pixels;
[0240] an insulating layer having an opening facing each of the
first electrodes and having an overhang at an edge of the
opening;
[0241] a charge injection-transport layer being cut or having
higher resistance at the overhang of the insulating layer to
exhibit one or both of a charge injection property and a charge
transport property;
[0242] an organic layer including one light-emitting layer or a
plurality of light-emitting layers common to all of the pixels;
and
[0243] a second electrode formed on an entire surface of the
organic layer,
[0244] the first electrodes, the insulating layer, the charge
injection-transport layer, the organic layer, and the second
electrode being disposed in this order from a substrate side.
[0245] It should be understood by those skilled in the art that
various modifications, combinations, sub-combinations, and
alterations may occur depending on design requirements and other
factors insofar as they are within the scope of the appended claims
or the equivalents thereof.
* * * * *