U.S. patent application number 14/276329 was filed with the patent office on 2014-12-04 for substrate detergent composition.
This patent application is currently assigned to SHIN-ETSU CHEMICAL CO., LTD.. The applicant listed for this patent is SHIN-ETSU CHEMICAL CO., LTD.. Invention is credited to Masaya UENO, Hideyoshi YANAGISAWA.
Application Number | 20140357052 14/276329 |
Document ID | / |
Family ID | 51985578 |
Filed Date | 2014-12-04 |
United States Patent
Application |
20140357052 |
Kind Code |
A1 |
UENO; Masaya ; et
al. |
December 4, 2014 |
SUBSTRATE DETERGENT COMPOSITION
Abstract
The invention provides a substrate detergent composition used
for cleaning a surface of a substrate, comprising: (A) A quaternary
ammonium salt: 0.1 to 2.0% by mass; (B) Water: 0.1 to 0.4% by mass;
and (C) An organic solvent: 94.0 to 99.8% by mass. There can be
provided a substrate detergent composition used for cleaning a
surface of a substrate contaminated with a silicone component whose
water contact angle is 100.degree. or more.
Inventors: |
UENO; Masaya; (Kanra-machi,
JP) ; YANAGISAWA; Hideyoshi; (Annaka, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SHIN-ETSU CHEMICAL CO., LTD. |
Tokyo |
|
JP |
|
|
Assignee: |
SHIN-ETSU CHEMICAL CO.,
LTD.
Tokyo
JP
|
Family ID: |
51985578 |
Appl. No.: |
14/276329 |
Filed: |
May 13, 2014 |
Current U.S.
Class: |
438/458 ;
510/175 |
Current CPC
Class: |
B08B 3/08 20130101; C11D
3/2068 20130101; H01L 21/02074 20130101; C11D 11/0047 20130101;
C11D 7/5022 20130101; C11D 7/3209 20130101; H01L 21/304 20130101;
H01L 21/6835 20130101; H01L 21/02057 20130101; C11D 3/2041
20130101; C11D 3/201 20130101; H01L 21/76254 20130101; C11D 3/30
20130101; H01L 21/31133 20130101; C11D 3/2006 20130101; H01L
2221/68327 20130101; C11D 3/2044 20130101 |
Class at
Publication: |
438/458 ;
510/175 |
International
Class: |
C11D 7/50 20060101
C11D007/50; H01L 21/762 20060101 H01L021/762; H01L 21/02 20060101
H01L021/02 |
Foreign Application Data
Date |
Code |
Application Number |
May 30, 2013 |
JP |
2013-114280 |
Claims
1. A substrate detergent composition used for cleaning a surface of
a substrate, comprising: (A) A quaternary ammonium salt: 0.1 to
2.0% by mass; (B) Water: 0.1 to 0.4% by mass; and (C) An organic
solvent: 94.0 to 99.8% by mass.
2. The substrate detergent composition according to claim 1,
wherein the substrate to be cleaned is a silicon semiconductor
substrate whose water contact angle is 100.degree. or more.
3. The substrate detergent composition according to claim 1,
wherein the quaternary ammonium salt is tetraalkylammonium
hydroxide.
4. The substrate detergent composition according to claim 2,
wherein the quaternary ammonium salt is tetraalkylammonium
hydroxide.
5. The substrate detergent composition according to claim 3,
wherein the tetraalkylammonium hydroxide is tetraethylammonium
hydroxide.
6. The substrate detergent composition according to claim 4,
wherein the tetraalkylammonium hydroxide is tetraethylammonium
hydroxide.
7. The substrate detergent composition according to claim 1,
wherein the organic solvent is an organic solvent containing at
least one hydroxyl group in one molecule and contains at least one
kind of a saturated aliphatic alcohol having 1 to 8 carbon atoms, a
glycol having 2 to 16 carbon atoms and a glycol ether having 4 to
20 carbon atoms.
8. The substrate detergent composition according to claim 2,
wherein the organic solvent is an organic solvent containing at
least one hydroxyl group in one molecule and contains at least one
kind of a saturated aliphatic alcohol having 1 to 8 carbon atoms, a
glycol having 2 to 16 carbon atoms and a glycol ether having 4 to
20 carbon atoms.
9. The substrate detergent composition according to claim 3,
wherein the organic solvent is an organic solvent containing at
least one hydroxyl group in one molecule and contains at least one
kind of a saturated aliphatic alcohol having 1 to 8 carbon atoms, a
glycol having 2 to 16 carbon atoms and a glycol ether having 4 to
20 carbon atoms.
10. The substrate detergent composition according to claim 4,
wherein the organic solvent is an organic solvent containing at
least one hydroxyl group in one molecule and contains at least one
kind of a saturated aliphatic alcohol having 1 to 8 carbon atoms, a
glycol having 2 to 16 carbon atoms and a glycol ether having 4 to
20 carbon atoms.
11. The substrate detergent composition according to claim 5,
wherein the organic solvent is an organic solvent containing at
least one hydroxyl group in one molecule and contains at least one
kind of a saturated aliphatic alcohol having 1 to 8 carbon atoms, a
glycol having 2 to 16 carbon atoms and a glycol ether having 4 to
20 carbon atoms.
12. The substrate detergent composition according to claim 6,
wherein the organic solvent is an organic solvent containing at
least one hydroxyl group in one molecule and contains at least one
kind of a saturated aliphatic alcohol having 1 to 8 carbon atoms, a
glycol having 2 to 16 carbon atoms and a glycol ether having 4 to
20 carbon atoms.
13. The substrate detergent composition according to claim 1,
wherein the substrate to be cleaned is a thin substrate with
thickness of 20 to 100 .mu.m.
14. The substrate detergent composition according to claim 2,
wherein the substrate to be cleaned is a thin substrate with
thickness of 20 to 100 .mu.m.
15. The substrate detergent composition according to claim 3,
wherein the substrate to be cleaned is a thin substrate with
thickness of 20 to 100 .mu.m.
16. The substrate detergent composition according to claim 4,
wherein the substrate to be cleaned is a thin substrate with
thickness of 20 to 100 .mu.m.
17. The substrate detergent composition according to claim 5,
wherein the substrate to be cleaned is a thin substrate with
thickness of 20 to 100 .mu.m.
18. The substrate detergent composition according to claim 6,
wherein the substrate to be cleaned is a thin substrate with
thickness of 20 to 100 .mu.m.
19. A thinning process for a substrate in which a semiconductor
circuit is formed comprising: bonding the substrate to a support
body using an adhesive; grinding a back side of the substrate;
delaminating the support body with the adhesive; removing the
adhesive remaining on the substrate surface using the substrate
detergent composition according to claim 1.
20. The thinning process for substrate according to claim 19,
wherein the adhesive is a silicone-based adhesive.
Description
FIELD OF THE INVENTION
[0001] The present invention relates to a substrate detergent
composition.
DESCRIPTION OF THE RELATED ART
[0002] In recent years, finer substrate processing and higher
integration technology has further been developed. Specifically,
conventional methods for mounting a semiconductor in a
3-dimensional structure are employed to achieve higher density and
larger capacity of a substrate. In fact, a 3-dimensional
semiconductor-mounting technology is capable of producing a
semiconductor obtained by laminating thinned semiconductor chips in
a multilayered structure by wire-connecting the same using through
silicon vias (TSV).
[0003] To achieve this technology, it is necessary to introduce an
electrode forming process for thinning a substrate having a formed
semiconductor circuit by backgrinding and further forming a
TSV-containing electrode on a rear surface.
[0004] A system proposed in a substrate-thinning process can be
subjected to processes such as a backgrinding process and back side
electrodes forming process by bonding a substrate in which a
semiconductor circuit is formed on a support substrate such as
silicon and glass using an adhesive. In fact, one of its technical
requirements is to readily exfoliate the support substrate after
completion of the processes, and thereafter it is necessary to
remove an adhesive remaining on a substrate surface in which a
semiconductor circuit is formed and to complete cleaning of a
thin-film semiconductor substrate surface.
[0005] Since the above processes are unfortunately subjected to a
high temperature of 150.degree. C. or more, a silicone-based
heat-resistant adhesive is normally employed. In the meantime, when
a substrate surface is cleaned using only an organic solvent for
dissolving an adhesive, the water contact angle of the substrate
surface is 100.degree. or more. It is thus hard to sufficiently
remove the adhesive. Therefore, it was assumed that problems such
as unfavorable bonding of an encapsulant are caused in subsequent
semiconductor manufacturing processes.
[0006] To overcome these technical disadvantages, introduction of a
detergent composition capable of sufficiently removing a remaining
adhesive with a short period of time without corrosion of a
substrate surface is strongly desired. Unfortunately, however, it
did not lead to development of a detergent composition capable of
sufficiently cleaning a surface of a substrate contaminated with a
silicone component with a short period of time (Patent Document
1).
PRIOR ART DOCUMENT
Patent Document
[0007] Patent Document 1: Japanese Patent Laid-Open Publication No.
2013-010888
SUMMARY OF THE INVENTION
[0008] The present invention was made in view of the above
situation, and has an object to provide a substrate detergent
composition used for cleaning a surface of a substrate such as a
silicon semiconductor substrate, a surface of which is contaminated
with e.g. a silicone component whose water contact angle is
100.degree. or more.
[0009] To solve the problems as mentioned above, the present
invention provides a substrate detergent composition used for
cleaning a surface of a substrate, comprising:
(A) A quaternary ammonium salt: 0.1 to 2.0% by mass; (B) Water: 0.1
to 0.4% by mass; and (C) An organic solvent: 94.0 to 99.8% by
mass.
[0010] Use of the above detergent composition can efficiently clean
a substrate without corrosion thereof.
[0011] Also, the substrate to be cleaned can be a silicon
semiconductor substrate whose water contact angle is 100.degree. or
more, generally 100 to 120.degree..
[0012] That mostly derives from a silicone-based adhesive
composition remaining on the substrate surface, and when an
elemental analysis on the substrate surface is executed using X-ray
photoelectron spectroscopy device, a content of silicon atom
derived from silicone-based adhesive is generally 10% by mass or
more, particularly 20% by mass or more related to the entire
elements detected before cleaning taken as 100% by mass.
[0013] Furthermore, a silicon substrate used in the present
application can be used for a thin substrate processing step which
is used for a package of compact semiconductor used to wire a
silicon substrate in which a circuit is formed with e.g. a metal
wiring. A thinning process can be achieved by attaching a laminated
body which forms a polymer adhesive on a support body to a silicon
substrate which has normal thickness, and by cutting and polishing
a back side of the silicon substrate. Illustrative example of the
support body includes a glass substrate and a silicon
substrate.
[0014] Furthermore, an adhesive used for thinning process is not
necessary after the process. Therefore, the adhesive is removed by
organic solvent, however, particularly a silicone-based adhesive is
hard to remove, and the adhesive remains 10% by mass or more on the
substrate.
[0015] Accordingly, a detergent composition of the present
invention can sufficiently clean a silicon semiconductor substrate
surface contaminated with a silicone component whose water contact
angle is 100.degree. or more with a short period of time. The water
contact angle can be determined at less than 100.degree..
Specifically, it is preferable to obtain a substrate whose water
contact angle is reduced to 10 to 30.degree., preferably 10 to
20.degree.. By determining a water contact angle at less than
100.degree., an effect such as adhesive strength to an encapsulant
can be remarkably improved in cases of use for a laminated body of
e.g. semiconductor package.
[0016] In addition, the quaternary ammonium salt is preferably
tetraalkylammonium hydroxide, particularly tetraethylammonium
hydroxide.
[0017] Accordingly, the quaternary ammonium salt is preferably a
quaternary ammonium hydroxide.
[0018] Preferably, the organic solvent is an organic solvent
containing at least one hydroxyl group in one molecule and contains
at least one kind of a saturated aliphatic alcohol having 1 to 8
carbon atoms, a glycol having 2 to 16 carbon atoms and a glycol
ether having 4 to 20 carbon atoms.
[0019] Accordingly, the substrate detergent composition of the
present invention can contain the above-shown organic solvent.
[0020] As described above, by cleaning a substrate such as a
silicon semiconductor substrate using the substrate detergent
composition of the present invention, a favorable cleaning property
can be obtained with a short period of time to achieve efficient
cleaning of a silicon semiconductor substrate without corrosion
thereof, and a durable substrate used for a semiconductor package
without corrosion of a substrate surface can be obtained as a thin
silicon semiconductor substrate.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0021] The present invention will be described in detail.
[0022] As stated above, development of a detergent composition
capable of sufficiently cleaning a substrate such as a silicon
semiconductor substrate with a short period of time and efficiently
and favorably cleaning the same has conventionally been
desired.
[0023] Inventors of the present invention carried out an extensive
investigation to find that a substrate can efficiently be cleaned
without corrosion thereof using a detergent composition containing
a specific mixture ratio of a quaternary ammonium salt, water and
an organic solvent, and the present invention was accomplished.
[0024] The present invention will be described in detail, but it is
not restricted thereto.
[0025] The detergent composition of the present invention used for
cleaning a surface of a substrate comprises:
(A) A quaternary ammonium salt: 0.1 to 2.0% by mass; (B) Water: 0.1
to 0.4% by mass; and (C) An organic solvent: 94.0 to 99.8% by
mass.
Quaternary Ammonium Salt
[0026] A quaternary ammonium salt capable of fulfilling the
objective of the present invention is e.g. a quaternary ammonium
hydroxide and a quaternary ammonium chloride. Illustrative example
thereof includes tetraalkylammonium which contains linear alkyl
group having 1 to 5 carbon atoms, trialkylhydroxyalkylammonium
hydroxide which contains alkyl group having 1 to 5 carbon atoms or
hydroxyalkyl group having 1 to 5 carbon atoms, tetramethylammonium
hydroxide (TMAH), tetraethylammonium hydroxide (TEAH),
tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide
(TBAH), trimethyl(hydroxyethyl)ammonium hydroxide (commonly named
as choline), and triethyl(hydroxyethyl)ammonium hydroxide.
Preferably used out of the above substances are tetraalkylammonium
hydroxide, particularly tetraethylammonium hydroxide (TEAH) in view
of cleaning property and stability of a detergent.
Organic Solvent
[0027] An organic solvent for fulfilling the objective of the
present invention is not particularly restricted, but contains at
least one hydroxyl group in one molecule. Illustrative example
thereof includes a saturated aliphatic alcohol having 1 to 8 carbon
atoms, preferably having 2 to 7 carbon atoms, and more preferably
having 3 to 6 carbon atoms; a glycol having 2 to 16 carbon atoms,
preferably having 3 to 14 carbon atoms, and more preferably having
5 to 12 carbon atoms; and a glycol ether having 4 to 20 carbon
atoms, 4 to 18 carbon atoms, and 4 to 15 carbon atoms, and one or
more solvents can be mixed to use. Illustrative example of the
saturated aliphatic monohydric alcohol includes methanol, ethanol,
n-propyl alcohol, isopropyl alcohol, 1-butanol, 2-butanol, isobutyl
alcohol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 3-pentanol,
2-methyl-1-butanol, isopentyl alcohol, sec-butyl alcohol,
Cert-pentyl alcohol, 3-methyl-2-butanol, neopentyl alcohol,
1-hexanol, 2-methyl-1-pentanol, 4-methyl-2-pentanol,
2-ethyl-1-butanol, 1-heptanol, 2-heptanol, 3-heptanol, 1-octanol,
2-octanol, 2-ethyl-1-hexanol, cyclohexanol, 1-methylcyclohexanol,
2-methylcyclohexanol, 3-methylcyclohexanol, 4-methylcyclohexanol,
and 2-ethylhexyl alcohol. Illustrative example of the glycol
includes ethylene glycol, propylene glycol, butylene glycol,
hexylene glycol, diethylene glycol, dipropylene glycol,
trimethylene glycol, triethylene glycol, tetramethylene glycol, and
tetraethylene glycol. Illustrative example of the glycol ether
includes ethylene glycol monomethyl ether, ethylene glycol
monoethyl ether, ethylene glycol mono n-propyl ether, ethylene
glycol mono n-butyl ether, diethylene glycol monomethyl ether,
diethylene glycol monoethyl ether, diethylene glycol monopropyl
ether, diethylene glycol monobutyl ether, diethylene glycol
monohexyl ether, triethylene glycol monomethyl ether, triethylene
glycol monoethyl ether, propylene glycol monomethyl ether,
propylene glycol monoethyl ether, propylene glycol monopropyl
ether, propylene glycol monobutyl ether, dipropylene glycol
monomethyl ether, dipropylene glycol monoethyl ether, tripropylene
glycol monomethyl ether, and 3-methoxy-3-methyl-1-butanol.
Preferably used out of the above substances are higher organic
solvent having 6 to 12 carbon atoms, particularly propylene glycol
monobutyl ether.
[0028] To obtain a substrate detergent composition of the present
invention, components of a detergent composition can be mixed in no
specific manner. The components may be mixed in an optional order,
and 2 or 3 components of a basic detergent composition may be
blended beforehand. Then, a remaining component may be mixed, or
all the components may be mixed altogether.
[0029] The detergent composition of the present invention is
preferably produced so that troubles such as deposition and liquid
separation are not caused.
[0030] Specifically, the concentration of a component (A): a
quaternary ammonium salt is 0.1 to 2.0% by mass related to the
entire components, preferably 0.2 to 1.5% by mass, and more
preferably 0.3 to 1.2% by mass. The component (A), if a
concentration thereof is under 0.1% by mass, might show an
insufficient property of cleaning a thin semiconductor substrate
surface. In cases where the concentration exceeds 2.0% by mass, the
property of cleaning might not be obtained, resulting in corrosion
of a silicon semiconductor substrate.
[0031] The concentration of a component (B): water is 0.1 to 0.4%
by mass, preferably 0.1 to 3.0% by mass, and more preferably 0.5 to
2.5% by mass. The component (B), if a concentration thereof is
under 0.1% by mass, might provide an insufficient property of
cleaning a thin semiconductor substrate surface. In cases where the
concentration exceeds 4.0% by mass, the property of cleaning might
not be obtained, resulting in corrosion of a silicon semiconductor
substrate.
[0032] The concentration of a component (C): an organic solvent
having at least one hydroxyl group in one molecule is 94.0 to 99.8%
by mass, preferably 95.5 to 99.7% by mass, and more preferably 96.3
to 99.6% by mass. The component (C), if a concentration thereof is
under 94.0% by mass, might fail to dissolve a small amount of an
adhesive component, leading to insufficient property of cleaning.
In cases where the concentration exceeds 99.8% by mass, the effect
of cleaning cannot be obtained.
[0033] As stated above, the detergent composition can be produced
by determining an optimal ratio of concentrations of all the
components, and other components can optionally be added.
[0034] The detergent composition of the present invention is not
restricted to a silicon semiconductor substrate, but to a germanium
substrate, a gallium-arsenic substrate, a gallium-phosphorus
substrate, a gallium-arsenic-aluminum substrate, an aluminum-plated
silicon substrate, a copper-plated silicon substrate, a
silver-plated silicon substrate, a gold-plated silicon substrate, a
titanium-plated silicon substrate, a silicon nitride film-forming
silicon substrate, a silicon oxide film-forming silicon substrate,
a polyimide film-forming silicon substrate, a glass substrate, a
quartz substrate, a liquid crystal substrate, and an organic EL
substrate.
[0035] The present invention which can clean a substrate having
normal thickness is particularly effective to a thin substrate
processed and cut whose thickness is preferably 20 to 100 .mu.m,
more preferably 20 to 70 .mu.m.
[0036] As a cleaning method, a substrate remaining organic matter
such as a silicone resin can be cleaned by immersed in or sprayed
with a detergent composition of the present invention, preferably
washed and dried for 30 seconds to 30 minutes, more preferably 1 to
10 minutes. Furthermore, in some cases, it may be heated in view of
dispersibility.
[0037] Furthermore, the obtained substrate without corrosion
further can be performed plating and sputtering treatment, and used
for a compact semiconductor package.
EXAMPLE
[0038] The present invention will be described in more detail with
reference to Examples and Comparative Examples, but the present
invention is not restricted thereto.
[0039] Production of a substrate
[0040] An adhesive layer was formed on an 8-inch silicon
semiconductor substrate (200 mm in diameter, thickness: 725 .mu.m)
with a film thickness of 10 .mu.m by a spin-coating method, using a
silicone resin nonane solution adhesive. Using an 8-inch glass
substrate (a glass wafer) as a support substrate, the support
substrate and a silicon semiconductor substrate having an adhesive
layer were bonded in a vacuum bonding device at 200.degree. C. to
produce a laminated body composed of the wafer, the adhesive layer
and the support substrate. Thereafter, a back side of the silicon
semiconductor substrate was ground using a grinder, so that the
final thickness of the substrate was 50 .mu.m. Subsequently, the
silicon semiconductor substrate in a laminated substrate was
horizontally fixed and the support substrate was exfoliated.
Afterward, the support substrate was immersed in a nonane solution
for 6 minutes, and the adhesive layer was removed and dried to
produce a cleaning-test silicon semiconductor substrate. At that
time, a water contact angle of the substrate surface was
108.degree., and an elemental analysis on the substrate surface by
X-ray photoelectron spectroscopy device showed a content of silicon
atom was 23%. Note that silicon derived from silicon substrate was
excluded from the content of silicon atom.
Example 1
[0041] A TMAH pentahydrate (4 g), water (1 g) and a
1-butoxy-2-propanol (95 g) were prepared into a 500 ml flask
equipped with an agitator, a cooling unit and a thermometer,
agitated at room temperature and the TMAH pentahydrate was
dissolved to obtain a detergent composition "A".
Example 2
[0042] A 25% TPAH aqueous solution (4 g) and a 1-propoxy-2-propanol
(96 g) were prepared into a 500 ml flask equipped with an agitator,
a cooling unit and a thermometer, and uniformly agitated at room
temperature to obtain a detergent composition "B".
Example 3
[0043] A 37% TBAH methanol solution (2.7 g), water (0.3 g) and a
1-butanol (97 g) were prepared into a 500 ml flask equipped with an
agitator, a cooling unit and a thermometer, and uniformly agitated
at room temperature to obtain a detergent composition "C".
Example 4
[0044] A 35% TEAH aqueous solution (1.5 g) and a
1-butoxy-2-propanol (98.5 g) were prepared into a 500m1 flask
equipped with an agitator, a cooling unit and a thermometer, and
uniformly agitated at room temperature to obtain a detergent
composition "D".
Example 5
[0045] A 35% TEAH aqueous solution (1.5 g), water (0.5 g), a
1-hexanol (49 g) and a 1-butoxy-2-propanol (49 g) were prepared
into a 500 ml flask equipped with an agitator, a cooling unit and a
thermometer, and uniformly agitated at room temperature to obtain a
detergent composition "E".
Example 6
[0046] A 35% TEAH aqueous solution (2.86 g), water (0.14 g), a
dipropylene glycol (48.5 g) and a 1-butoxy-2-propanol (48.5 g) were
prepared into a 500 ml flask equipped with an agitator, a cooling
unit and a thermometer, and uniformly agitated at room temperature
to obtain a detergent composition "F".
Example 7
[0047] A 35% TEAH aqueous solution (5.71 g), water (0.09 g), a
methanol (47.15 g) and a 1-propoxy-2-propanol (47.15 g) were
prepared into a 500 ml flask equipped with an agitator, a cooling
unit and a thermometer, and uniformly agitated at room temperature
to obtain a detergent composition "G".
Comparative Example 1
[0048] A 35% TEAR aqueous solution (0.14 g), water (0.86 g) and a
1-butoxy-2-propanol (99 g) were prepared into a 500 ml flask
equipped with an agitator, a cooling unit and a thermometer, and
agitated at room temperature to obtain a detergent composition
"H".
Comparative Example 2
[0049] A TMAH pentahydrate (6 g), water (2 g) and a
1-butoxy-2-propanol (92 g) were prepared into a 500 ml flask
equipped with an agitator, a cooling unit and a thermometer,
agitated at room temperature, and the TMAH pentahydrate was
dissolved to obtain a detergent composition "I". However, a water
layer was separated to obtain no favorable detergent
composition.
Comparative Example 3
[0050] Water (3 g) and a 1-propoxy-2-propanol (97 g) were prepared
into a 500 ml flask equipped with an agitator, a cooling unit and a
thermometer, and uniformly agitated at room temperature to obtain a
detergent composition "J".
Comparative Example 4
[0051] A 10% TMAH propylene glycol solution (5 g) and a
1-butoxy-2-propanol (95 g) were prepared into a 500 ml flask
equipped with an agitator, and uniformly agitated at room
temperature to obtain a detergent composition "K".
Examples 1 to 7, Comparative Examples 1 to 4
[0052] The silicon semiconductor substrate was cleaned by immersed
for 6 minutes using the detergent compositions "A" to "K". Each of
the detergent compositions was evaluated as follows. Table 1 shows
a ratio of each composition and the results.
Appearance
[0053] The appearance of each detergent composition was visually
confirmed. In confirmation of such problems as precipitation of
deposition and separation of a water layer, each case was
evaluated, using symbols "0" (no problem found) and "x" (problem
found).
Evaluation of a Property of Cleaning a surface of a Substrate
[0054] The silicon semiconductor substrate produced was cleaned
using detergent compositions "A" to "H", "J" and "K". Specifically,
after the silicon semiconductor substrate was immersed in the
detergent compositions "A" to "H", "J" and "K" for a certain period
of time, it was washed with pure water for one minute to confirm
the water contact angle of a silicon semiconductor substrate
surface dried. The water contact angle before cleaning was
108.degree.. In cases where the time required for making the
contact angle under 30.degree. was under 6 minutes, the silicon
semiconductor substrate surface was evaluated with a symbol of
"oo". In cases where the time required for making the contact angle
less than 30.degree. was over 6 minutes and under 10 minutes, the
silicon semiconductor substrate surface was evaluated with symbols
of "0". In cases where the time required for making the contact
angle under 30.degree. 10 minutes or more, the silicon
semiconductor substrate surface was evaluated with symbols of "x",
respectively.
[0055] Measurement device: Contact Angle Meter DM-301 manufactured
by Kyowa Interface Science Co., LTD.
Water Contact Angle After Cleaning of a Substrate Surface
[0056] A produced silicon semiconductor substrate was cleaned using
detergent compositions "A" to "H", "J" and "K". Specifically, after
the silicon semiconductor substrate was immersed in the detergent
compositions "A" to "H", "J" and "K" for 6 minutes, it was
washed-with pure water for one minute to confirm the water contact
angle of a silicon semiconductor substrate surface dried using
above-mentioned device.
Substrate Surface Analysis After Cleaning
[0057] A produced silicon semiconductor substrate was cleaned using
detergent compositions "A" to "H", "J" and "K". Specifically, after
the silicon semiconductor substrate was immersed in the detergent
compositions "A" to "H", "J" and "K" for 6 minutes, it was washed
with pure water for one minute to execute elemental analysis on a
silicon semiconductor substrate surface dried using X-ray
photoelectron spectroscopy device, and analyze a content of
silicon.
[0058] Measurement device: AXIS-Ultra DLD manufactured by Kratos
Analytical Limited.
TABLE-US-00001 TABLE 1 Compara- Compara- Compara- Compara- Exam-
Exam- Exam- Exam- Exam- Exam- Exam- tive tive tive tive ple 1 ple 2
ple 3 ple 4 ple 5 ple 6 ple 7 Example 1 Example 2 Example 3 Example
4 Detergent A B C D E F G H I J K composition TMAH 2 3 TEAH 0.5 0.5
1 2 0.05 0.5 TPAH 1 TBAH 1 Water 3 3 0.3 1 1.5 2 3.8 0.95 5 3
Methanol 1.7 47.1 1-butanol 97 1-hexanol 49 Propylene 4.5 glycol
Dipropylene 48.5 glycol 1-propoxy- 96 47.1 97 2-propanol
1-butoxy-2- 95 98.5 49 48.5 99 92 95 propanol Appearance
.smallcircle. .smallcircle. .smallcircle. .smallcircle.
.smallcircle. .smallcircle. .smallcircle. .smallcircle. x
.smallcircle. Contact angle .smallcircle. .smallcircle.
.smallcircle. .smallcircle..smallcircle. .smallcircle..smallcircle.
.smallcircle..smallcircle. .smallcircle. x -- x after cleaning
Contact angle 35 32 35 18 25 23 33 85 -- 108 63 after cleaning
(angle) content of 4 4 3 <1 1 1 4 20 -- 23 17 silicon atom after
cleaning
[0059] Table 1 shows that in the Examples 1 to 7 that meet
requirements of the substrate detergent composition of the present
invention, a favorable property of cleaning can be obtained with a
short period of time, resulting in no corrosion of a substrate.
[0060] Meanwhile, in the Comparative Examples 1 to 4 that don't
meet requirements of the substrate detergent composition of the
present invention, a favorable property of cleaning cannot be
obtained, resulting in corrosion of a substrate.
[0061] From these observations, it was confirmed that the substrate
detergent composition of the present invention can obtain a
favorable property of efficiently cleaning a silicon semiconductor
substrate with a short period of time without corrosion of a
substrate even in a thin substrate.
[0062] It must be stated here that the present invention is not
restricted to the embodiments shown by Examples. The embodiments
shown by Examples are merely examples so that any embodiments
composed of substantially the same technical concept as disclosed
in the claims of the present invention and expressing a similar
effect are included in the technical scope of the present
invention.
* * * * *