U.S. patent application number 14/445126 was filed with the patent office on 2014-11-13 for solid state memory (ssm), computer system including an ssm, and method of operating an ssm.
The applicant listed for this patent is SAMSUNG ELECTRONICS CO., LTD.. Invention is credited to Do-geun Kim, Moon-wook Oh, Chan-ik Park.
Application Number | 20140337566 14/445126 |
Document ID | / |
Family ID | 40363885 |
Filed Date | 2014-11-13 |
United States Patent
Application |
20140337566 |
Kind Code |
A1 |
Oh; Moon-wook ; et
al. |
November 13, 2014 |
SOLID STATE MEMORY (SSM), COMPUTER SYSTEM INCLUDING AN SSM, AND
METHOD OF OPERATING AN SSM
Abstract
In one aspect, data is stored in a solid state memory which
includes first and second memory layers. A first assessment is
executed to determine whether received data is hot data or cold
data. Received data which is assessed as hot data during the first
assessment is stored in the first memory layer, and received data
which is first assessed as cold data during the first assessment is
stored in the second memory layer. Further, a second assessment is
executed to determine whether the data stored in the first memory
layer is hot data or cold data. Data which is then assessed as cold
data during the second assessment is migrated from the first memory
layer to the second memory layer.
Inventors: |
Oh; Moon-wook; (Seoul,
KR) ; Kim; Do-geun; (Seoul, KR) ; Park;
Chan-ik; (Seoul, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SAMSUNG ELECTRONICS CO., LTD. |
SUWON-SI |
|
KR |
|
|
Family ID: |
40363885 |
Appl. No.: |
14/445126 |
Filed: |
July 29, 2014 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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14146870 |
Jan 3, 2014 |
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14445126 |
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14101469 |
Dec 10, 2013 |
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14146870 |
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13647630 |
Oct 9, 2012 |
8626996 |
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14101469 |
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13027299 |
Feb 15, 2011 |
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13647630 |
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12015548 |
Jan 17, 2008 |
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13027299 |
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Current U.S.
Class: |
711/103 |
Current CPC
Class: |
G06F 2212/7202 20130101;
G06F 3/0679 20130101; G06F 3/0647 20130101; G11C 16/10 20130101;
G06F 3/0605 20130101; G06F 3/0649 20130101; G06F 12/08 20130101;
G06F 3/0659 20130101; G06F 3/0658 20130101; G06F 3/0604 20130101;
G06F 12/0246 20130101; G06F 2003/0697 20130101; G11C 11/56
20130101 |
Class at
Publication: |
711/103 |
International
Class: |
G06F 3/06 20060101
G06F003/06 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 14, 2007 |
KR |
10-2007-0081832 |
Claims
1. A memory system, comprising: a first group of memory cells, each
of the first group of memory cells configured to store a first
number of bits per cell; a second group of memory cells, each of
the second group of memory cells configured to store a second
number of bits per cell; and a controller configured to move data
from the first group of memory cells to the second group of memory
cells when the number of available memory cells in the first group
of memory cell is less than a threshold, wherein the first group of
memory cells and the second group of memory cell are included in a
first memory device.
2. The memory system of claim 1, wherein the controller is
configured to selectively move the data from the first group of
memory cells to the second group of memory cells based on a write
access frequency of the data.
3. The memory system of claim 1, wherein the controller is
configured to examine a write count value of each valid data in the
first group of memory cells.
4. The memory system of claim 3, wherein the controller is
configured to classify the data based on the write count value of
each valid data in the first group of memory cells.
5. The memory system of claim 1, wherein the controller is
configured to determine whether the number of the available memory
cells in the first group of memory cells is less than the
threshold.
6. The memory system of claim 5, wherein the controller is
configured to selectively move the data from the first group of
memory cells to the second group of memory cells based on a write
access frequency of the data.
7. The memory system of claim 1, wherein the first group of memory
cells are single-level flash memory cells, and the second group of
memory cells are multi-level flash memory cells.
8. The memory system of claim 1, wherein the first group of memory
cells use a fine-grain mapping and the second group of memory cells
use a coarse-grain mapping such that an operational speed of the
first group of memory cells is faster than an operational speed of
the second group of memory cells.
9. The memory system of claim 1, wherein the controller is
configured to move the data from the first group of memory cells to
the second group of memory cells at periodic intervals when the
number of available memory cells of the first group of memory cells
is less than the threshold.
10. The memory system of claim 1, wherein a first-type data is
initially stored in the first group of memory cells and a
second-type data is stored in the second group of memory cells, the
first-type data having an access frequency that is greater than a
predetermined access frequency, the second-type data having an
access frequency that is lower than the predetermined access
frequency.
11. The memory system of claim 10, wherein the first-type data
includes directory information and logging information, and the
second-type data includes image files, sound files and program
code.
12. A method of managing data in a memory system that includes a
first memory and a second memory, the method comprising:
determining whether the number of available memory cells of the
first memory is less than a threshold; and moving data in the first
memory to the second memory when the number of available memory
cells of the first memory is less than the threshold.
13. The method of claim 12, wherein the data is selectively moved
from the first memory to the second memory based on a write access
frequency of the data.
14. The method of claim 12, wherein both the first memory and the
second memory include multi-level memory cells, the number of bit
per cell in the second memory being greater than the number of bit
per cell in the first memory.
15. The method of claim 12, wherein the first memory includes
single-level memory cells, and the second memory includes
multi-level memory cells.
16. The method of claim 12, wherein the first memory and the second
memory are a single integrated memory that is divided into a first
group and a second group such that the first group is allocated as
the first memory and the second group is allocated as the second
memory.
17. The method of claim 12, wherein a storage capacity of the
second memory is greater than a storage capacity of the first
memory.
18. A method of managing data in a memory system comprising a first
memory device that includes a first memory and a second memory, the
method comprising: determining whether available memory cells of
the first memory is greater than a first threshold; and maintaining
the available memory cells of the first memory above the threshold
by moving to the second memory data that is stored in the first
memory and has an access frequency lower than a second threshold,
wherein the first memory includes single-level memory cells, and
the second memory includes multi-level memory cells.
19. The method of claim 18, further comprising determining whether
the second memory have available memory cells to receive the data
from the first memory.
20. The method of claim 19, wherein the data is moved from the
first memory to the second memory only if the second memory is
determined to have the available memory cells to receive the data
from the first memory.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This is a continuation of co-pending application Ser. No.
14/146, 870, filed Jan. 3, 2014, which is a continuation of
co-pending application Ser. No. 14/101,469, filed Dec. 10, 2013,
which is a divisional of application Ser. No. 13/647,630, filed
Oct. 9, 2012, which issued as U.S. Pat. No. 8,626,996, on Jan. 7,
2014, and which is a divisional of abandoned application Ser. No.
13/027,299, filed Feb. 15, 2011, which is a divisional of abandoned
application Ser. No. 12/015,548, filed Jan. 17, 2008, which is
incorporated herein by reference in its entirety.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention generally relates to memory systems,
and more particularly, the present invention relates to a solid
state memory (SSM), a computer system which includes an SSM, and a
method of operating an SSM. Examples of the SSM include the main
memory of a computer system and the solid state drive (SSD) of a
computer system.
[0004] A claim of priority is made to Korean Patent Application No.
2007-0081832, filed Aug. 14, 2007, the entirety of which is
incorporated herein by reference.
[0005] 2. Description of the Related Art
[0006] A solid state drive (SSD) is a data storage device that
typically emulates a conventional hard disk drive (HDD), thus
easily replacing the HDD in most applications. In contrast to the
rotating disk medium of an HDD, an SSD utilizes solid state memory
to store data. With no moving parts, an SSD largely eliminates seek
time, latency and other electro-mechanical delays and failures
associated with a conventional HDD.
[0007] An SSD is commonly composed of either NAND flash
(non-volatile) or SDRAM (volatile).
[0008] SSDs based on volatile memory such as SDRAM are
characterized by fast data access and are used primarily to
accelerate applications that would otherwise be held back by the
latency of disk drives. The volatile memory of the DRAM-based SSDs
typically requires the inclusion of an internal battery and a
backup disk system to ensure data persistence. If power is lost,
the battery maintains power for sufficient duration of copy data
from the SDRAM to the backup disk system. Upon restoration of
power, data is copied back from the backup disk to SDRAM, at which
time the SSD resumes normal operations.
[0009] However, most SSD manufacturers use non-volatile flash
memory to create more rugged and compact alternatives to DRAM-based
SSDs. These flash memory-based SSDs, also known as flash drives, do
not require batteries, allowing makers to more easily replicate
standard hard disk drives. In addition, non-volatile flash SSDs
retain memory during power loss.
[0010] As is well know in the art, single-level cell (SLC) flash is
capable of storing one bit per memory cell, while multi-level cell
(MLC) flash is capable of storing two or more bits per memory cell.
As such, in order to increase capacity, flash SSDs may utilize
multi-level cell (MLC) memory banks. However, flash SSDs generally
suffer from relatively slow random write speeds, and this
operational drawback is further exasperated with relatively slow
speeds of MLC flash. As such, it has been suggested to equip SSDs
with two types of flash storage media--lower capacity SLC memory
banks and higher capacity MLC memory banks. With such a
configuration, frequently used data (e.g., directory and/or log
information) can be stored in the faster SLC banks, while less
frequently used data (e.g., music files, images, etc.) can be
stored in the slower MLC banks.
SUMMARY OF THE INVENTION
[0011] According to an aspect of the present invention, data is
stored in a solid state memory which includes first and second
memory layers. A first assessment is executed to determine whether
received data is hot data or cold data. Received data which is
assessed as hot data during the first assessment is stored in the
first memory layer, and received data which is assessed as cold
data during the first assessment is stored in the second memory
layer. Further, a second assessment is executed to determine
whether the data stored in the first memory layer is hot data or
cold data. Data which is then assessed as cold data during the
second assessment is migrated from the first memory layer to the
second memory layer.
[0012] According to another aspect of the present invention, a
method of storing received data in a solid state memory includes
initially storing hot data in a high-speed memory layer and, and
then migrating a portion of the data stored in the high-speed
memory layer to a low-speed memory layer for storing cold data.
[0013] According to yet another aspect of the present invention, a
solid state memory system includes a first memory layer, a second
memory layer, and a memory controller. The memory controller is
configured to execute a first assessment of whether received data
is hot data or cold data, to store received data which is assessed
as hot data during the first assessment in the first memory layer,
and to store received data which is assessed as cold data during
the first assessment in the second memory layer. The memory
controller is further configured to execute a second assessment of
whether the data stored in the first memory layer is hot data or
cold data, and to migrate data which is assessed as cold data
during the second assessment from the first memory layer to the
second memory layer.
[0014] According to still another aspect of the present invention,
a solid state memory system is configured to operatively connect to
a computer operating system and comprises first and second memory
layers. An operational speed of the first memory layer is greater
than an operational speed of the second memory layer, and the first
memory area is operationally hidden from the computer operating
system when the solid state memory is operatively connected to the
computer operating system.
[0015] According to another aspect of the present invention, a
computer system includes a processor and a memory. The solid state
memory includes a high-speed memory layer and a low-speed memory
layer, and the high-speed memory area is operationally hidden from
the processor.
BRIEF DESCRIPTION OF THE DRAWINGS
[0016] The above and other aspects and features of the present
invention will become readily apparent from the detailed
description that follows, with reference to the accompanying
drawings, in which:
[0017] FIG. 1 is a block diagram of a solid state drive (SSD)
according to an embodiment of the present invention;
[0018] FIGS. 2 and 3 are block diagrams for describing a
non-volatile storage media in the SSD of FIG. 1 according to an
embodiment of the present invention;
[0019] FIGS. 4 and 5 are block diagrams for describing alternative
ways of coupling a non-volatile storage media to an interface in
the SSD of FIG. 1 according to embodiments of the present
invention;
[0020] FIGS. 6 through 8 are flow charts for use in describing
methods of allocating data to regions of a non-volatile storage
media in the SSD of FIG. 1 according to embodiments of the present
invention;
[0021] FIG. 9 is a block diagram of the computer system including
an SSD according to an embodiment of the present invention; and
[0022] FIGS. 10 and 11 are block diagrams of a main memory
according to embodiments of the present invention.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0023] The present invention will now be described by way of
preferred, but non-limiting, embodiments of the invention. It is
emphasized here that the invention is not limited by the exemplary
embodiments described below, and that instead the scope of the
invention is delimited by the appended claims.
[0024] FIG. 1 illustrates a block diagram of a solid state drive
(SSD) 1000 according to an embodiment of the present invention. As
shown, the SSD 1000 of this example includes an SSD controller 1200
and non-volatile storage media 1400.
[0025] The SSD controller 1200 includes first and second interfaces
1210 and 1230, a controller 1220, and a memory 1240.
[0026] The first interface 1210 functions as a data I/O interface
with a host device, such as a host central processing unit (CPU)
(not shown). Non-limiting examples of the first interface 1210
include Universal Serial Bus (USB) interfaces, Advanced Technology
Attachment (ATA) interfaces, Serial ATA (SATA) interfaces, Small
Computer System Interface (SCSI) interfaces.
[0027] The second interface 1230 functions as a data I/O interface
with the non-volatile storage media 1400. In particular, the second
interface 1230 is utilized to transmit/receive various commands,
addresses and data to/from the non-volatile storage media 1400. As
will be apparent to those skilled in the art, a variety of
different structures and configurations of the second interface
1230 are possible, and thus a detailed description thereof is
omitted here for brevity.
[0028] The controller 1220 and memory 1240 are operatively
connected between the first and second interfaces 1210 and 1230,
and together function to control/manage the flow of data between
the host device (not shown) and the non-volatile storage media
1400. The memory 1240 may, for example, be an DRAM type of memory
device, and the controller 1220 may, for example, include a central
processing unit (CPU), a direct memory access (DMA) controller, and
an error correction control (ECC) engine. Examples of controller
functionality may be found in commonly assigned U.S. Patent
Publication 2006-0152981, which is incorporated herein by
reference. The operations generally executed by controller 1220
(and memory 1240) to transfer data between the host device (not
shown) and SSD memory banks are understood by those skilled in the
art, and thus a detailed description thereof is omitted here for
brevity. Rather, the operational description presented later herein
is primarily focused on inventive aspects relating to various
embodiments of the invention.
[0029] Still referring to FIG. 1, the non-volatile storage media
1400 of this example includes a high-speed non-volatile memory
(NVM) 1410 and a low-speed non-volatile memory (NVM) 1420. As the
names suggest, the high-speed NVM 1410 is capable of operating at a
relatively higher speed (e.g., random write speed) when compared to
the low-speed NVM 1420.
[0030] In an exemplary embodiment, the high-speed NVM 1410 is
single-level cell (SLC) flash memory, and the low-speed NVM 1420 is
multi-level cell (MLC) flash memory. However, the invention is not
limited in this respect. For example, the high-speed NVM 1410 may
instead be comprised of phase-change random access memory (PRAM),
or MLC flash memory in which one bit per cell is utilized. Also,
the high-speed NVM 1410 and the low-speed NVM 1420 may be comprised
of the same type of memory (e.g., SLC or MLC or PRAM), where the
operational speed is differentiated by fine-grain mapping in the
high-speed NVM 1410 and coarse-grain mapping in the low-speed NVM
1420.
[0031] Generally, the high-speed NVM 1410 is utilized to store
frequently accessed (written) data such as meta data, and the
low-speed NVM 1420 is utilized to store less frequently accessed
(written) data such as media data. In other words, as will
discussed later herein, a write frequency of data in the high-speed
NVM 1410 is statistically higher than a write frequency of data in
the low-speed NVM 1420. Also, due to the nature of the respective
data being stored, the storage capacity of the low-speed NVM 1420
will typically be much higher than that of the high-speed NVM
1410.
[0032] In an exemplary embodiment, the high-speed NVM 1410 is
hidden from an external operating system connected to the SSD. This
aspect of the embodiment is illustrated in FIGS. 2 and 3.
[0033] Referring collectively to FIGS. 2 and 3, the high-speed NVM
1410 of the example of this embodiment is a hidden region--that is,
the high-speed NVM 1410 is cannot be seen (directly addressed) by
the external operating system (OS). Rather, the address space shown
relative to the OS view is only the low-speed NVM 1420. On the
other hand, the address space shown relative to the Flash
Translation Layer (FTL) is both the high-speed NVM 1410 and the
low-speed NVM 1420. The FTL translates an address provided by the
OS into a physical address of the non-volatile storage media 1400
(i.e., a physical address within the high-speed NVM 1410 or the
low-speed NVM 1420).
[0034] Turning to the block diagrams of FIGS. 4 and 5, there are a
number of different ways in which the high-speed NVM 1410 and the
low-speed NVM 1420 can be operative connected to the controller
1220 (FIG. 1) via the interface 1230. In the example of FIG. 4, the
high-speed NVM 1410 and the low-speed NVM 1420 communicate via the
interface 1230 using common interface channels. In the example of
FIG. 5, the high-speed NVM 1410 and the low-speed NVM 1420
communicate via the interface 1230 using separate interface
channels.
[0035] It is again noted, however, that the high-speed NVM 1410 and
the low-speed NVM 1420 need not be composed of different types of
memory. That is, a single type of memory may be operationally
segregated into a high-speed layer and a low-speed layer. For
example, the grain mapping in the two layers may differ, or the
number of bits utilized per cell in the two layers may differ.
Further, the high-speed memory layer and the low-speed memory layer
may be segregated at the chip level (e.g., contained in different
memory chips), or within the same memory chip (e.g., contained in
different memory blocks or groups of memory cells of the same
memory chip).
[0036] An operational description of the SSD according to
embodiments of the present invention is presented next.
[0037] According to an embodiment of the present invention in which
data is stored in the SSD, a first assessment is executed to
determine whether received data is hot data or cold data. As will
be understood by those skilled in the art, "hot" data is a term of
art that refers to data which is frequently written or updated
(requiring write access), such a directory information and/or
logging information. "Cold" data is all other data, i.e., data
which is not frequently written or updated, such as image files,
sound files, program code and so on. Cold data may be written once
or infrequently, but read frequently. Thus, it is the frequency of
write access that separates hot data from cold.
[0038] Received data which is assessed as hot data during the first
assessment is stored in the high-speed NVM 1410, and received data
which is first assessed as cold data during the first assessment is
stored in the low-speed NVM 1420.
[0039] Then, a second assessment is executed to determine whether
the data stored in the high-speed NVM 1410 is hot data or cold
data. In other words, the data stored in the high-speed NVM 1410
reassessed to determine with the data should be reclassified as
cold data. Data which is then assessed as cold data during the
second assessment is migrated from the high-speed NVM 1410 to the
low-speed NVM 1420.
[0040] By periodically migrating data which initially determined to
be hot data from the high-speed NVM 1410 to the low-speed NVM 1420,
the size of the high-speed NVM 1410 can be reduced. This can
potentially result in cost savings, and increase the overall
storage capacity of the SSD (e.g., by allowing for more space for
the high-capacity MLC layer).
[0041] The second assessment and migration of data to the low-speed
NVM 1420 can be programmed to occur, for example, when the unused
capacity of the high-speed NVM 1410 is less than a preset value.
Alternately, for example, the second assessment and migration of
data to the low-speed NVM 1420 can be programmed to occur at given
periodic intervals, or when the SSD is idle. Examples of an idle
state may include periods in which no read/write request is
received from the host, or when the activation ratio or intensity
of read/write requests is less than a threshold.
[0042] FIG. 6 is a flow chart for use in describing the first
assessment and storage (write) of data in the SSD according to an
embodiment of the present invention.
[0043] Initially, at step 100, a write command, an address and data
are received. Then, at step 110, a determination is made as to
whether the received data is classified as hot data. If the
received data is classified as hot data, the received data is
stored in the high-speed NVM 1410 at step 120. On the other hand,
if the received data is not classified as hot data, the received
data is stored in the low-speed NVM 1420 at step 130.
[0044] It should be noted that data stored in the low-speed NVM
1420 at step 130 may first be "passed through" the high-speed NVM
1410. In other words, the data may first be briefly (temporarily)
stored in the high-speed NVM 1410, and then stored in the low-speed
NVM. In this case, the high-speed NVM 1410 essentially acts as a
memory buffer for the low-speed NVM 1420.
[0045] FIG. 7 is a flow chart for use in describing the first
assessment and storage (write) of data in the SSD according to
another embodiment of the present invention.
[0046] Initially, at step 300, a write command, an address and data
are received. Then, at steps 310a through 310e, a determination is
made as to whether the received data is to be classified as hot
data. If the received data is classified as hot data, and if there
is sufficient available space in the high-speed NVM 1410 (step
320), the received data is stored in the high-speed NVM 1410 at
step 340. On the other hand, if the received data is not to be
classified as hot data, or if there is insufficient available space
in the high-speed NVM 1410, the received data is stored in the
low-speed NVM 1420 at step 330.
[0047] There are a number of different ways in which the received
data might be classified as hot data, and steps 310a through 310e
of FIG. 7 represent a non-exhaustive list of decision processes
which can be used in the classification. These steps can be used in
combinations of two or more, or individually, depending on the
desired level of accuracy in the first assessment of the received
data.
[0048] At step 310a, a determination is made as to whether the
operating system (OS) has provided information that the data is hot
data. If so, the data is classified as hot data, and the process
proceeds to step 320.
[0049] At step 310b, a determination is made as to whether the
write count of the logical block address has exceeded a
predetermined threshold. If so, the data is classified as hot data,
and the process proceeds to step 320.
[0050] At step 310c, a determination is made as to whether the
request size of the data is less then predetermined threshold
(e.g., less than 32 KB). If so, the data is classified as hot data,
and the process proceeds to step 320.
[0051] At step 310d, a determination is made as to whether there is
a non-sequential address increment relative to the previously
received command. If so, the data is classified as hot data, and
the process proceeds to step 320.
[0052] At step 310e, a determination is made as to whether a merge
operation is likely to be induced in the low-speed NVM. If so, the
data is classified as hot data, and the process proceeds to step
320.
[0053] Although not shown in FIG. 7, in the case where insufficient
space exists in the high-speed NVM (step 320), and alternative
would be to create available space by migrating already stored cold
data of the high-speed NVM to the low-speed NVM, and then storing
the new hot data in the high-speed NVM.
[0054] Also, with reference to above-described processes of FIGS. 6
and 7, it is noted that the embodiments thereof are not limited to
storing all of the hot and cold data in the high-speed and
low-speed NVMs, respectively. For example, some of the data
initially assessed as cold data may be stored in the high-speed
NVM. Also, though less preferable, some of the data initially
assessed as hot data may be stored in the low-speed NVM.
[0055] FIG. 8 is a flow chart for use in describing an example of
the second assessment and migration of data to the low-speed NVM in
the SSD according to an embodiment of the present invention.
[0056] Initially, at step 410, a determination is made as to
whether an unused memory capacity of the high-speed NVM is less
than a predetermined threshold value. As suggested previously, this
step can be supplemented with (or replaced with) a periodic
execution step in which step 410 (or step 420 below) is executed at
periodic intervals, and/or with a SSD idle determination step in
which step 410 (or step 420) is executed at periodic intervals.
[0057] Next, at step 420, a determination is made as to whether
data stored in the high-speed NVM is hot data, i.e., whether the
data may be reclassified as cold data.
[0058] Then, at step 430, reclassified cold data which stored in
the high-speed NVM is migrated to the low-speed NVM.
[0059] There are a number of different ways in which the
determination of step 420 may be executed. For example, it is
possible to examine the write count value of each valid data in the
high-speed NVM, and to then reclassify data having low write counts
as cold data. Alternately, it is possible to carry out a FIFO-type
assessment in which old (first come) valid data is reclassified as
cold data.
[0060] With reference to above-described process of FIG. 8, it is
noted that the embodiment thereof is not limited to migrating all
of the cold data to the low-speed NVM. For example, some of the
data assessed as cold data may be retained in the high-speed
NVM.
[0061] FIG. 9 is a block diagram of a computer system according to
an embodiment of the present invention. As shown in the figure, a
processor (host) 2100 and main memory 2200 communicate over a data
bus 2001. Also connected to the bus 2001 are an output device 2500
(e.g., display), an input device 2300 (e.g., keyboard), other I/O
devices 2400, and a solid state drive SSD. The solid state drive is
configured according to one or more of the previously described
embodiments of the invention.
[0062] Embodiments of the present invention have been described
primarily in the context of solid state drives (SSDs). However, the
invention is not limited to SSD applications. For example, FIG. 10
illustrates an embodiment where the high-speed memory layer and the
low speed memory layer constitute the main memory 2200 of the
computer system shown in FIG. 9. In FIG. 10, the high-speed memory
layer 1510 includes DRAM cells and may be a hidden region relative
to the processor 2100 of FIG. 9. The low-speed memory layer 1520 of
FIG. 10 includes flash cells (either SLC or MLC) and may be open
relative to the processor 2100 of FIG. 9. FIG. 11 illustrates
another example of a main memory 2200. As shown, the high-speed
memory layer 1610 includes DRAM cells and may be a hidden region
relative to the processor 2100 of FIG. 9, and the low-speed memory
layer 1620 includes phase-change random access memory (PRAM) cells
and may be open relative to the processor 2100 of FIG. 9.
[0063] The above-disclosed subject matter is to be considered
illustrative, and not restrictive, and the appended claims are
intended to cover all such modifications, enhancements, and other
embodiments, which fall within the true spirit and scope of the
present invention. Thus, to the maximum extent allowed by law, the
scope of the present invention is to be determined by the broadest
permissible interpretation of the following claims and their
equivalents, and shall not be restricted or limited by the
foregoing detailed description.
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