U.S. patent application number 14/259171 was filed with the patent office on 2014-10-30 for light-emitting component driving circuit and related pixel circuit and applications using the same.
This patent application is currently assigned to WINTEK CORPORATION. The applicant listed for this patent is Hsi-Rong Han, Chih-Hung Huang, Wen-Tui Liao, Tsung-Yu Wang, Wen-Chun Wang. Invention is credited to Hsi-Rong Han, Chih-Hung Huang, Wen-Tui Liao, Tsung-Yu Wang, Wen-Chun Wang.
Application Number | 20140320550 14/259171 |
Document ID | / |
Family ID | 51769298 |
Filed Date | 2014-10-30 |
United States Patent
Application |
20140320550 |
Kind Code |
A1 |
Liao; Wen-Tui ; et
al. |
October 30, 2014 |
LIGHT-EMITTING COMPONENT DRIVING CIRCUIT AND RELATED PIXEL CIRCUIT
AND APPLICATIONS USING THE SAME
Abstract
A pixel circuit relating to an organic light emitting diode
(OLED) is provided by the invention, and if the circuit
configuration (5T1C or 6T1C) thereof collaborates with suitable
operation waveforms, the current flowing through an OLED in the
OLED pixel circuit is not be changed along with variation of a
power supply voltage (Vdd) influenced by the IR drop, and is not be
varied along with the threshold voltage (Vth) shift of a TFT used
for driving the OLED. Accordingly, the brightness uniformity of the
applied OLED display can be substantially improved.
Inventors: |
Liao; Wen-Tui; (Taichung
City, TW) ; Wang; Tsung-Yu; (Taichung City, TW)
; Han; Hsi-Rong; (Taichung City, TW) ; Huang;
Chih-Hung; (Taichung City, TW) ; Wang; Wen-Chun;
(Taichung City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Liao; Wen-Tui
Wang; Tsung-Yu
Han; Hsi-Rong
Huang; Chih-Hung
Wang; Wen-Chun |
Taichung City
Taichung City
Taichung City
Taichung City
Taichung City |
|
TW
TW
TW
TW
TW |
|
|
Assignee: |
WINTEK CORPORATION
Taichung City
TW
|
Family ID: |
51769298 |
Appl. No.: |
14/259171 |
Filed: |
April 23, 2014 |
Current U.S.
Class: |
345/690 ;
345/82 |
Current CPC
Class: |
G09G 2320/0233 20130101;
G09G 2320/045 20130101; G09G 3/3225 20130101; G09G 2310/0251
20130101 |
Class at
Publication: |
345/690 ;
345/82 |
International
Class: |
G09G 3/32 20060101
G09G003/32 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 24, 2013 |
TW |
102114649 |
Claims
1. A light-emitting component driving circuit, comprising: a
driving unit, coupled between a power supply voltage and a
light-emitting component, and comprising a driving transistor
configured to control a driving current flowing through the
light-emitting component in a light enable phase; a light-emitting
control unit, coupled between the driving unit and the
light-emitting component, and configured to conduct the driving
current come from the driving unit to the light-emitting component
in response to a light enable signal in the light enable phase; and
a data storage unit, coupled to the driving unit, comprising a
storage capacitor, and configured to store a data voltage and a
threshold voltage related to the driving transistor through the
storage capacitor in response to a writing scan signal in a
data-writing phase, and control terminal voltages of the storage
capacitor in response to the light enable signal in the light
enable phase, wherein in the light enable phase, the driving unit
generates the driving current flowing through the light-emitting
component in response to a cross-voltage of the storage capacitor,
and the driving current is not influenced by the threshold voltage
of the driving transistor and the power supply voltage.
2. The light-emitting component driving circuit as claimed in claim
1, wherein a gate of the driving transistor is coupled to a first
terminal of the storage capacitor, and a source of the driving
transistor is coupled to the power supply voltage, and the
light-emitting control unit comprises: a light-emitting control
transistor, having a gate receiving the light enable signal, and a
source coupled to a drain of the driving transistor, wherein a
first terminal of the light-emitting component is coupled to a
drain of the light-emitting control transistor, and a second
terminal of the light-emitting component is coupled to a reference
voltage, wherein the light-emitting component is an organic
light-emitting diode, and the first terminal of the light-emitting
component is an anode of the organic light-emitting diode, and the
second terminal of the light-emitting component is a cathode of the
organic light-emitting diode.
3. The light-emitting component driving circuit as claimed in claim
2, wherein the data storage unit further comprises: a writing
transistor, having a gate receiving the writing scan signal, a
source receiving the data voltage, and a drain coupled to a second
terminal of the storage capacitor; a collection transistor, having
a gate receiving the writing scan signal, a source coupled to the
gate of the driving transistor and the first terminal of the
storage capacitor, and a drain coupled to the drain of the driving
transistor; and a voltage-control transistor, having a gate and a
source coupled to each other to receive the light enable signal,
and a drain coupled to the second terminal of the storage capacitor
and the drain of the writing transistor.
4. The light-emitting component driving circuit as claimed in claim
3, wherein the driving transistor, the light-emitting control
transistor, the writing transistor, the collection transistor and
the voltage-control transistor are all P-type transistors.
5. The light-emitting component driving circuit as claimed in claim
4, wherein the light-emitting component driving circuit is an
organic light-emitting diode driving circuit, and the organic
light-emitting diode driving circuit enters the data-writing phase
and the light enable phase in succession, wherein in the
data-writing phase, the writing scan signal is enabled, and the
light enable signal is disabled, wherein in the light enable phase,
the light enable signal is enabled, and the writing scan signal is
disabled.
6. The light-emitting component driving circuit as claimed in claim
4, wherein the data storage unit initializes a first terminal
voltage of the storage capacitor in response to a reset scan signal
in a reset phase, wherein the data storage unit further comprises a
reset transistor, wherein a gate and a source of the reset
transistor are coupled to each other to receive the reset scan
signal, and a drain of the reset transistor is coupled to the first
terminal of the storage capacitor, wherein the reset transistor is
a P-type transistor.
7. The light-emitting component driving circuit as claimed in claim
6, wherein the light-emitting component driving circuit is an
organic light-emitting diode driving circuit, and the organic
light-emitting diode driving circuit enters the reset phase, the
data-writing phase and the light enable phase in succession,
wherein in the reset phase, the reset scan signal is enabled, and
the writing scan signal and the light enable signal are disabled,
wherein in the data-writing phase, the writing scan signal is
enabled, and the reset scan signal and the light enable signal are
disabled, wherein in the light enable phase, the light enable
signal is enabled, and the reset scan signal and the writing scan
signal are disabled.
8. A pixel circuit, comprising: a light-emitting component,
configured to emit light in response to a driving current in a
light enable phase; a driving unit, coupled between a power supply
voltage and the light-emitting component, and comprising a driving
transistor configured to control the driving current flowing
through the light-emitting component in the light enable phase; a
light-emitting control unit, coupled between the driving unit and
the light-emitting component, and configured to conduct the driving
current come from the driving unit to the light-emitting component
in response to a light enable signal in the light enable phase; and
a data storage unit, coupled to the driving unit, comprising a
storage capacitor, and configured to store a data voltage and a
threshold voltage related to the driving transistor through the
storage capacitor in response to a writing scan signal in a
data-writing phase, and control terminal voltages of the storage
capacitor in response to the light enable signal in the light
enable phase, wherein in the light enable phase, the driving unit
generates the driving current flowing through the light-emitting
component in response to a cross-voltage of the storage capacitor,
and the driving current is not influenced by the threshold voltage
of the driving transistor and the power supply voltage.
9. The pixel circuit as claimed in claim 8, wherein a gate of the
driving transistor is coupled to a first terminal of the storage
capacitor, and a source of the driving transistor is coupled to the
power supply voltage, and the light-emitting control unit
comprises: a light-emitting control transistor, having a gate
receiving the light enable signal, and a source coupled to a drain
of the driving transistor, wherein a first terminal of the
light-emitting component is coupled to a drain of the
light-emitting control transistor, and a second terminal of the
light-emitting component is coupled to a reference voltage, wherein
the light-emitting component is an organic light-emitting diode,
and the first terminal of the light-emitting component is an anode
of the organic light-emitting diode, and the second terminal of the
light-emitting component is a cathode of the organic light-emitting
diode, wherein, the pixel circuit is an organic light-emitting
diode pixel circuit, wherein the driving unit, the data storage
unit and the light-emitting control unit construct an organic
light-emitting diode driving circuit.
10. The pixel circuit as claimed in claim 9, wherein the data
storage unit further comprises: a writing transistor, having a gate
receiving the writing scan signal, a source receiving the data
voltage, and a drain coupled to a second terminal of the storage
capacitor; a collection transistor, having a gate receiving the
writing scan signal, a source coupled to the gate of the driving
transistor and the first terminal of the storage capacitor, and a
drain coupled to the drain of the driving transistor; and a
voltage-control transistor, having a gate and a source coupled to
each other to receive the light enable signal, and a drain coupled
to the second terminal of the storage capacitor and the drain of
the writing transistor.
11. The pixel circuit as claimed in claim 10, wherein the driving
transistor, the light-emitting control transistor, the writing
transistor, the collection transistor and the voltage-control
transistor are all P-type transistors.
12. The pixel circuit as claimed in claim 11, wherein the organic
light-emitting diode driving circuit enters the data-writing phase
and the light enable phase in succession, wherein in the
data-writing phase, the writing scan signal is enabled, and the
light enable signal is disabled, wherein in the light enable phase,
the light enable signal is enabled, and the writing scan signal is
disabled.
13. The pixel circuit as claimed in claim 11, wherein the data
storage unit initializes a first terminal voltage of the storage
capacitor in response to a reset scan signal in a reset phase,
wherein the data storage unit further comprises a reset transistor,
wherein a gate and a source of the reset transistor are coupled to
each other to receive the reset scan signal, and a drain of the
reset transistor is coupled to the first terminal of the storage
capacitor, wherein the reset transistor is a P-type transistor.
14. The pixel circuit as claimed in claim 13, wherein the organic
light-emitting diode driving circuit enters the reset phase, the
data-writing phase and the light enable phase in succession,
wherein in the reset phase, the reset scan signal is enabled, and
the writing scan signal and the light enable signal are disabled,
wherein in the data-writing phase, the writing scan signal is
enabled, and the reset scan signal and the light enable signal are
disabled, wherein in the light enable phase, the light enable
signal is enabled, and the reset scan signal and the writing scan
signal are disabled.
15. An organic light-emitting diode display panel having the pixel
circuit as claimed in claim 8.
16. An organic light-emitting diode display having the organic
light-emitting diode display panel as claimed in claim 15.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the priority benefit of Taiwan
application serial no. 102114649, filed on Apr. 24, 2013. The
entirety of the above-mentioned patent application is hereby
incorporated by reference herein and made a part of this
specification.
BACKGROUND
[0002] 1. Technical Field
[0003] The invention relates to a flat panel display technique.
Particularly, the invention relates to a driving circuit having a
light-emitting component with a self-luminous characteristic (for
example, an organic light-emitting diode (OLED), though the
invention is not limited thereto) and a related pixel circuit and
applications thereof
[0004] 2. Related Art
[0005] Along with quick development of multimedia society,
semiconductor components and display devices are quickly developed.
Regarding a display, since an active matrix organic light-emitting
diode (AMOLED) display has advantages of no viewing angle
limitation, low manufacturing cost, high response speed (more than
a hundred times greater than that of liquid crystal), power saving,
self-luminous, direct current (DC) driving suitable for portable
products, large working temperature range, lightweight,
miniaturization and thinning along with hardware equipment, etc. to
cope with characteristic demands of displays of multimedia era, the
AMOLED displays have a great development potential, and are
expected to become innovative flat panel displays of a next
generation to replace liquid crystal displays (LCDs).
[0006] There are two methods for manufacturing the AMOLED display
panel, one is to use a low-temperature polysilicon (LTPS) thin film
transistor (TFT) process technique, and another one is to use an
a-Si TFT process technique. Since the LTPS TFT process technique
requires more mask processes, the manufacturing cost thereof is
increased. Therefore, the current LTPS TFT process technique is
mainly applied for manufacturing middle and small size panels, and
the a-Si TFT process technique is mainly applied for manufacturing
large size panels.
[0007] Generally, in the AMOLED display panel manufactured by using
the LTPS TFT process technique, a TFT in a pixel circuit thereof
can be a P-type or an N-type TFT, though since the P-type TFT
conducts positive voltage and has better driving capability, the
P-type TFTs are generally used for implementation. However, in case
that the P-type TFTs are used to implement the OLED pixel circuit,
a current flowing through the OLED not only changes along with
variation of a power supply voltage (Vdd) influenced by a
current-resistance (IR) drop, but also changes along with a
threshold voltage (Vth) shift of the TFT used for driving the OLED.
Therefore, brightness uniformity of the OLED display is
influenced.
SUMMARY
[0008] Accordingly, in order to improve brightness uniformity of an
organic light-emitting diode (OLED) display, an exemplary
embodiment of the invention provides a light-emitting component
driving circuit including a driving unit, a light-emitting control
unit and a data storage unit. The driving unit is coupled between a
power supply voltage and a light-emitting component, and includes a
driving transistor. The driving unit is configured to control a
driving current flowing through the light-emitting component in a
light enable phase. The light-emitting control unit is coupled
between the driving unit and the light-emitting component, and is
configured to conduct the driving current come from the driving
unit to the light-emitting component in response to a light enable
signal in the light enable phase.
[0009] The data storage unit is coupled to the driving unit and
includes a storage capacitor. The data storage unit stores a data
voltage and a threshold voltage related to the driving transistor
through the storage capacitor in response to a writing scan signal
in a data-writing phase, and controls terminal voltages of the
storage capacitor in response to the light enable signal in the
light enable phase. In the light enable phase, the driving unit
generates the driving current flowing through the light-emitting
component in response to a cross-voltage of the storage capacitor,
and the driving current flowing through the light-emitting
component is not influenced by the threshold voltage of the driving
transistor and the power supply voltage.
[0010] In an exemplary embodiment of the invention, a gate of the
driving transistor is coupled to a first terminal of the storage
capacitor, and a source of the driving transistor is coupled to the
power supply voltage. In this case, the light-emitting control unit
includes a light-emitting control transistor, where a gate thereof
is configured to receive the light enable signal, and a source
thereof is coupled to a drain of the driving transistor. Moreover,
a first terminal of the light-emitting component is coupled to a
drain of the light-emitting control transistor, and a second
terminal of the light-emitting component is coupled to a reference
voltage. Moreover, the light-emitting component is, for example, an
organic light-emitting diode, so that the first terminal of the
light-emitting component is an anode of the organic light-emitting
diode, and the second terminal of the light-emitting component is a
cathode of the organic light-emitting diode.
[0011] In an exemplary embodiment of the invention, the data
storage unit includes a writing transistor, a collection transistor
and a voltage-control transistor, where a gate of the writing
transistor is configured to receive the writing scan signal, a
source of the writing transistor is configured to receive the data
voltage, and a drain of the writing transistor is coupled to a
second terminal of the storage capacitor. A gate of the collection
transistor is configured to receive the writing scan signal, a
source of the collection transistor is coupled to the gate of the
driving transistor and the first terminal of the storage capacitor,
and a drain of the collection transistor is coupled to the drain of
the driving transistor. A gate and a source of the voltage-control
transistor are coupled to each other to receive the light enable
signal, and a drain of the voltage-control transistor is coupled to
the second terminal of the storage capacitor and the drain of the
writing transistor.
[0012] In an exemplary embodiment of the invention, the driving
transistor, the light-emitting control transistor, the writing
transistor, the collection transistor and the voltage-control
transistor are all P-type transistors. In this case, the
light-emitting component driving circuit is an organic
light-emitting diode driving circuit, and the organic
light-emitting diode driving circuit enters the data-writing phase
and the light enable phase in succession. In the data-writing
phase, the writing scan signal is enabled, and the light enable
signal is disabled. Moreover, in the light enable phase, the light
enable signal is enabled, and the writing scan signal is
disabled.
[0013] In an exemplary embodiment of the invention, the data
storage unit initializes a first terminal voltage of the storage
capacitor in response to a reset scan signal in a reset phase. In
this case, the data storage unit further includes a reset
transistor, where a gate and a source thereof are coupled to each
other to receive the reset scan signal, and a drain thereof is
coupled to the first terminal of the storage capacitor. The reset
transistor is, for example, a P-type transistor.
[0014] In an exemplary embodiment of the invention, in case that
the data storage unit has the reset transistor, the organic
light-emitting diode driving circuit enters the reset phase, the
data-writing phase and the light enable phase in succession. In the
reset phase, the reset scan signal is enabled, and the writing scan
signal and the light enable signal are disabled. In the
data-writing phase, the writing scan signal is enabled, and the
reset scan signal and the light enable signal are disabled. In the
light enable phase, the light enable signal is enabled, and the
reset scan signal and the writing scan signal are disabled.
[0015] Another exemplary embodiment of the invention provides a
pixel circuit having the aforementioned light-emitting component
driving circuit, and the pixel circuit is, for example, an organic
light-emitting diode pixel circuit.
[0016] Another exemplary embodiment of the invention provides an
organic light-emitting diode display panel having the
aforementioned organic light-emitting diode pixel circuit.
[0017] Another exemplary embodiment of the invention provides an
organic light-emitting diode display having the aforementioned
organic light-emitting diode display panel.
[0018] According to the above descriptions, the invention provides
a pixel circuit relating to an organic light-emitting diode (OLED),
and if a circuit configuration (5T1C or 6T1C) thereof collaborates
with suitable operation waveforms, the current flowing through the
OLED is not changed along with variation of the power supply
voltage (Vdd) influenced by the IR drop, and is not changed along
with a threshold voltage (Vth) shift of a thin-film transistor
(TFT) used for driving the organic light-emitting diode. In this
way, brightness uniformity of the OLED display is greatly
improved.
[0019] In order to make the aforementioned and other features and
advantages of the invention comprehensible, several exemplary
embodiments accompanied with figures are described in detail
below.
BRIEF DESCRIPTION OF THE DRAWINGS
[0020] The accompanying drawings are included to provide a further
understanding of the invention, and are incorporated in and
constitute a part of this specification. The drawings illustrate
embodiments of the invention and, together with the description,
serve to explain the principles of the invention.
[0021] FIG. 1 is a schematic diagram of an organic light-emitting
diode (OLED) pixel circuit 10 according to an exemplary embodiment
of the invention.
[0022] FIG. 2 is a circuit diagram of the OLED pixel circuit 10 of
FIG. 1.
[0023] FIG. 3 is an operation waveform diagram of the OLED pixel
circuit 10 of FIG. 1.
[0024] FIG. 4 is another circuit diagram of the OLED pixel circuit
10 of FIG. 1.
[0025] FIG. 5 is an operation waveform diagram of the OLED pixel
circuit 10 of FIG. 4.
DETAILED DESCRIPTION OF DISCLOSED EMBODIMENTS
[0026] Reference will now be made in detail to the present
preferred embodiments of the invention, examples of which are
illustrated in the accompanying drawings. Wherever possible, the
same reference numbers are used in the drawings and the description
to refer to the same or like parts.
[0027] FIG. 1 is a schematic diagram of a pixel circuit 10
according to an exemplary embodiment of the invention. FIG. 2 is a
circuit diagram of the pixel circuit 10 of FIG. 1. Referring to
FIG. 1 and FIG. 2, the pixel circuit 10 of the present exemplary
embodiment includes a light-emitting component (for example, an
organic light-emitting diode (OLED) 101, though the invention is
not limited thereto, so that the pixel circuit 10 can be regarded
as an OLED pixel circuit) and a light-emitting component driving
circuit 103. The light-emitting component driving circuit 103
includes a driving unit 105, a light-emitting control unit 107 and
a data storage unit 109.
[0028] In the present exemplary embodiment, the driving unit 105 is
coupled between a power supply voltage Vdd and the OLED 101 (i.e.
the light-emitting component), and includes a driving transistor
T1. Moreover, the driving unit 105 is configured to control a
driving current I.sub.OLED flowing through the OLED 101 in a light
enable phase.
[0029] Moreover, the light-emitting control unit 107 is coupled
between the driving unit 105 and the OLED (the light-emitting
component) 101. In addition, the light-emitting control unit 107 is
configured to conduct the driving current I.sub.OLED come from the
driving unit 105 to the OLED 101 in response to a light enable
signal LE in the light enable phase.
[0030] Moreover, the data storage unit 109 is coupled to the
driving unit 105, and includes a storage capacitor Cst. In
addition, the data storage unit 109 stores a data voltage Vdata and
a threshold voltage V.sub.th(T1) related to the driving transistor
T1 through the storage capacitor Cst in response to a writing scan
signal S[n] (note: the writing scan signal S[n] can be a signal on
a current scan line, which is provided by a gate driving circuit of
an n.sup.th stage, though the invention is not limited thereto) in
a data-writing phase. Moreover, the data storage unit 109 further
controls terminal voltages of the storage capacitor Cst in response
to the light enable signal LE in the light enable phase.
[0031] In the present exemplary embodiment, the driving unit 105
generates the driving current I.sub.OLED flowing through the OLED
101 in response to a cross-voltage of the storage capacitor Cst in
the light enable phase, and the driving current I.sub.OLED is not
influenced by the power supply voltage Vdd and the threshold
voltage V.sub.th(T1) of the driving transistor T1. In other words,
the driving current I.sub.OLED flowing through the OLED 101 is
ideally or substantially non-related to the power supply voltage
Vdd and the threshold voltage V.sub.th(T1) of the driving
transistor T1.
[0032] Besides, the light-emitting control unit 107 includes a
light-emitting control transistor T2. Moreover, the data storage
unit 109 further includes a writing transistor T3, a collection
transistor T4 and a voltage-control transistor T5.
[0033] In the present exemplary embodiment, the driving transistor
T1, the light-emitting control transistor T2, the writing
transistor T3, the collection transistor T4 and the voltage-control
transistor T5 can all be implemented by P-type transistors, for
example, P-type thin-film-transistors (P-type TFTs), though the
invention is not limited thereto. Moreover, an OLED display panel
applying the (OLED) pixel circuit 10 of FIG. 2 can be fabricated by
using a low-temperature polysilicon (LTPS), amorphous silicon
(a-Si) or amorphous indium gallium zinc oxide (a-IGZO) TFT process
technique, though the invention is not limited thereto.
[0034] Moreover, in a circuit configuration (5T1C) of the (OLED)
pixel circuit 10 of FIG. 2, a gate of the driving transistor T1 is
coupled to a first terminal (i.e. a node A) of the storage
capacitor Cst, and a source of the transistor T1 is coupled to the
power supply voltage Vdd.
[0035] A gate of the light-emitting control transistor T2 is
configured to receive the light enable signal LE, and a source of
the light-emitting control transistor T2 is coupled to a drain of
the driving transistor T1. An anode (i.e. a first terminal) of the
OLED (the light-emitting component) 101 is coupled to a drain of
the light-emitting control transistor T2, and a cathode (i.e. a
second terminal) of the OLED (the light-emitting component) 101 is
coupled to a reference voltage (for example, a ground voltage,
though the invention is not limited thereto).
[0036] A gate of the writing transistor T3 is configured to receive
the writing scan signal S[n], a source of the writing transistor T3
is configured to receive the data voltage Vdata, and a drain of the
writing transistor T3 is coupled to a second terminal (i.e. a node
B) of the storage capacitor Cst. A gate of the collection
transistor T4 is configured to receive the writing scan signal
S[n], a source of the collection transistor T4 is coupled to the
gate of the driving transistor T1 and the first terminal (i.e. the
node A) of the storage capacitor Cst, and a drain of the collection
transistor T4 is coupled to the drain of the driving transistor T1.
A gate and a source of the voltage-control transistor T5 are
coupled to each other to receive the light enable signal LE, and a
drain of the voltage-control transistor T5 is coupled to the second
terminal (i.e. the node B) of the storage capacitor Cst and the
drain of the writing transistor T3.
[0037] In addition, during an operation process of the (OLED) pixel
circuit 10 of FIG. 2, the light-emitting component driving circuit
103 (i.e. the OLED driving circuit) enters the data-writing phase
and the light enable phase in succession, which are, for example,
P1 and P2 shown in FIG. 3. In the present exemplary embodiment, in
the data-writing phase P1, only the writing scan signal S[n] is
enabled. Moreover, in the light enable phase P2, only the light
enable signal LE is enabled.
[0038] In other words, in the data-writing phase P1, the writing
scan signal S[n] is enabled, and the light enable signal LE is
disabled. Moreover, in the light enable phase P2, the light enable
signal LE is enabled, and the writing scan signal S[n] is disabled.
Certainly, a high level (VH) and a low level (VL) of the writing
scan signal S[n] and the light enable signal LE can be determined
according to an actual design/application requirement.
[0039] It should be noticed that since the driving transistor T1,
the light-emitting control transistor T2, the writing transistor
T3, the collection transistor T4 and the voltage-control transistor
T5 in the (OLED) pixel circuit 10 of FIG. 2 are all P-type
transistors, it is known that the driving transistor T1, the
light-emitting control transistor T2, the writing transistor T3,
the collection transistor T4 and the voltage-control transistor T5
are all low active. Therefore, enabling of the writing scan signal
S[n] and the light enable signal LE represents that the writing
scan signal S[n] and the light enable signal LE are in a low
level.
[0040] Therefore, in the data-writing phase P1, since only the
writing scan signal S[n] is enabled, the driving transistor T1, the
writing transistor T3 and the collection transistor T4 are
simultaneously in an on state, and the light-emitting control
transistor T2 and the voltage-control transistor T5 are
simultaneously in an off state in response to disabling of the
light enable signal LE, so as to avoid a wrong operation of sudden
light up of the OLED 101, and maintain a contrast of a displayed
image. In this case, the driving transistor T1 and the collection
transistor T4 can be regarded as/equivalent to a diode, and now a
voltage on the first terminal (i.e. the node A) of the storage
capacitor Cst is Vdd-V.sub.th(T1), and a voltage on the second
terminal (i.e. the node B) of the storage capacitor Cst is the data
voltage Vdata, where V.sub.th(T1) is a threshold voltage of the
driving transistor T1. In other words, a voltage difference between
the two terminals of the storage capacitor Cst is
Vdd-V.sub.th(T1)-Vdata.
[0041] Then, in the light enable phase P2, since only the light
enable signal LE is enabled, the driving transistor T1, the
light-emitting control transistor T2 and the voltage-control
transistor T5 are all in the on state, and the writing transistor
T3 and the collection transistor T4 are all in the off state. In
this way, the driving transistor T1 generates the driving current
I.sub.OLED that is not influenced by the power supply voltage Vdd
and the threshold voltage V.sub.th(T1) of the driving transistor T1
to flow through the OLED 101 in response to the cross-voltage of
the storage capacitor Cst.
[0042] In detail, under the circuit configuration of FIG. 2, the
driving current I.sub.OLED generated by the driving transistor T1
in the light enable phase P2 can be represented by a following
equation (1):
I OLED = 1 2 K .times. ( Vsg - V th ( T 1 ) ) 2 ( 1 )
##EQU00001##
[0043] Where, K is a current constant of the driving transistor
T1.
[0044] Moreover, since a source gate voltage (Vsg) of the driving
transistor T1 is already known, i.e.:
[0045] A source voltage (Vs) of the driving transistor T1 is equal
to Vdd (i.e., Vs=Vdd);
[0046] A gate voltage (Vg) of the driving transistor T1 is equal to
a voltage of the node A (i.e., Vg=Vdd-V.sub.th(T1)-Vdata) (note:
the voltage of the node A is equal to Vdd-V.sub.th(T1)-Vdata in
response to conduction of the voltage-control transistor T4 and a
capacitor coupling effect of the storage capacitor Cst. In other
words, the voltage-control transistor T5 is capable of controlling
the terminal voltages of the storage capacitor Cst in the light
enable phase P2.); and
Vsg=Vs-Vg=Vdd-(Vdd-V.sub.th(T1)-Vdata)
[0047] Therefore, when the (OLED) pixel circuit 10 shown in FIG. 2
is in the light enable phase P2, if the known source gate voltage
(Vsg) of the driving transistor T1 is brought into the equation
(1), a following equation (2) is obtained:
I OLED = 1 2 K .times. [ Vdd - ( Vdd - V th ( T 1 ) - Vdata ) - V
th ( T 1 ) ] 2 ( 2 ) ##EQU00002##
[0048] The equation (2) can be further simplified into a following
equation (3):
I OLED = 1 2 K .times. ( Vdata ) 2 ( 3 ) ##EQU00003##
[0049] Therefore, according to the equation (3), it is clear that
under the circuit configuration of FIG. 2, the driving current
I.sub.OLED flowing through the OLED 101 is ideally or substantially
non-related to the power supply voltage Vdd and the threshold
voltage V.sub.th(T1) of the driving transistor T1, and is
approximately related to the data voltage Vdata, merely. In this
way, a variation of the threshold voltage of the TFT caused by a
stress effect can be compensated, and a variation of the power
supply voltage Vdd due to influence of the IR drop is also
compensated. Besides, according to the circuit configuration of
FIG. 2, it is clear that only control signals of the writing scan
signal S[n] and the light enable signal LE are required in
operation of the (OLED) pixel circuit 10, so that a layout area of
the (OLED) pixel circuit 10 is simplified, and the (OLED) pixel
circuit 10 is more suitable for application requirements of high
resolution panels.
[0050] On the other hand, FIG. 4 is another circuit diagram of the
(OLED) pixel circuit 10 of FIG. 1. Referring to FIG. 2 and FIG. 4,
a difference between the circuit configurations of FIG. 2 and FIG.
4 is only that the circuit configuration of FIG. 4 further includes
a reset transistor T6, which can also be implemented by a P-type
transistor, for example, a P-type TFT, though the invention is not
limited thereto. In this case, the data storage unit 109 of FIG. 4
initializes/resets the first terminal voltage (i.e. the voltage of
the node A) of the storage capacitor Cst in response to a reset
scan signal S[n-1] in a reset phase (note: the reset scan signal
S[n-1] can be a signal on a previous scan line, which is provided
by a gate driving circuit of an (n-1).sup.th stage, though the
invention is not limited thereto). In the present exemplary
embodiment, a gate and a source of the reset transistor T6 are
coupled to each other to receive the reset scan signal S[n-1], and
a drain of the reset transistor T6 is coupled to the first terminal
(i.e. the node A) of the storage capacitor Cst.
[0051] Similarly, during an operation process of the (OLED) pixel
circuit 10 of FIG. 4, the light-emitting component driving circuit
103 (i.e. the OLED driving circuit) enters the reset phase, the
data-writing phase and the light enable phase in succession, which
are, for example, P0, P1 and P2 shown in FIG. 5. In the present
exemplary embodiment, in the reset phase P0, only the reset scan
signal S[n-1] is enabled. In the data-writing phase P1, only the
writing scan signal S[n] is enabled. Moreover, in the light enable
phase P2, only the light enable signal LE is enabled.
[0052] In other words, in the reset phase P0, the reset scan signal
S[n-1] is enabled, and the writing scan signal S[n] and the light
enable signal LE are disabled. In the data-writing phase P1, the
writing scan signal S[n] is enabled, and the reset scan signal
S[n-1] and the light enable signal LE are disabled. Moreover, in
the light enable phase P2, the light enable signal LE is enabled,
and the reset scan signal S[n-1] and the writing scan signal S[n]
are disabled. Certainly, a high level (VH) and a low level (VL) of
the reset scan signal S[n-1], the writing scan signal S[n] and the
light enable signal LE can be determined according to an actual
design/application requirement.
[0053] It should be noticed that since the driving transistor T1,
the light-emitting control transistor T2, the writing transistor
T3, the collection transistor T4 and the voltage-control transistor
T5 in the (OLED) pixel circuit 10 of FIG. 4 are all P-type
transistors, it is known that the driving transistor T1, the
light-emitting control transistor T2, the writing transistor T3,
the collection transistor T4 and the voltage-control transistor T5
are all low active. Therefore, enabling of the reset scan signal
S[n-1], the writing scan signal S[n] and the light enable signal LE
represents that the reset scan signal S[n-1], the writing scan
signal S[n] and the light enable signal LE are in a low level.
[0054] Therefore, in the reset stage P0, since only the reset scan
signal S[n-1] is enabled, the voltage (i.e. the gate voltage Vg of
the driving transistor T1) of the node A is equal to a low level
(VL.sub.S[n-1]) of the reset scan signal S[n-1] minus V.sub.th(T6)
as the diode-connected reset transistor T6 is turned on, i.e.
VL.sub.S[n-1]-V.sub.th(T6), where V.sub.th(T6) is a threshold
voltage of the reset transistor T6 (such process is to perform
initialization/reset on the first terminal voltage (the gate
voltage Vg of the driving transistor T1) of the storage capacitor
Cst). Meanwhile, in response to disabling of the light enable
signal LE, the light-emitting control transistor T2 and the
voltage-control transistor T5 are all in the off state, so as to
avoid a wrong operation of sudden light up of the OLED 101, and
maintain a contrast of a displayed image. Moreover, in response to
disabling of the writing scan signal S[n], the writing transistor
T3 and the collection transistor T4 are also in the off state.
[0055] Then, in the data-writing phase P1, since only the writing
scan signal S[n] is enabled, the driving transistor T1, the writing
transistor T3 and the collection transistor T4 are simultaneously
in the on state, and the light-emitting control transistor T2 and
the voltage-control transistor T5 are simultaneously in the off
state in response to disabling of the light enable signal LE. In
this case, the driving transistor T1 and the collection transistor
T4 can be regarded as/equivalent to a diode, and now a voltage on
the first terminal (i.e. the node A) of the storage capacitor Cst
is Vdd-V.sub.th(T1), and a voltage on the second terminal (i.e. the
node B) of the storage capacitor Cst is the data voltage Vdata.
Moreover, in the data-writing phase P1, in response to disabling of
the light enable signal LE, the light-emitting control transistor
T2 is in the off state, so that the wrong operation of sudden light
up of the OLED 101 in the data-writing phase P1 is also
avoided.
[0056] Finally, in the light enable phase P2, since only the light
enable signal LE is enabled, the driving transistor T1, the
light-emitting control transistor T2 and the voltage-control
transistor T5 are all in the on state, and the writing transistor
T3 and the collection transistor T4 are all in the off state. In
this way, the driving transistor T1 generates the driving current
I.sub.OLED that is not influenced by the power supply voltage Vdd
and the threshold voltage V.sub.th(T1) of the driving transistor T1
to flow through the OLED 101 in response to the cross-voltage of
the storage capacitor Cst (similar to related descriptions of the
aforementioned equations (1)-(3), which are not repeated). In other
words, in FIG. 4, the driving transistor T1 also generates the
driving current I.sub.OLED (shown as the aforementioned equations
(1)-(3)) that is not influenced by the power supply voltage Vdd and
the threshold voltage V.sub.th(T1) of the driving transistor T1 to
flow through the OLED 101 in the light enable phase P2. Obviously,
besides technical effects similar to that of the exemplary
embodiment of FIG. 2 is achieved, the circuit configuration of FIG.
4 further has a function/effect of initializing/resetting the first
terminal voltage of the storage capacitor Cst (the gate voltage Vg
of the driving transistor T1).
[0057] Therefore, the circuit configuration of the (OLED) pixel
circuit 10 disclosed in the aforementioned exemplary embodiments is
5T1C (i.e. 5 TFTs+one capacitor)/6T1C (i.e. 6 TFTs+one capacitor),
and if the circuit configuration collaborates with suitable
operation waveforms (shown in FIG. 3 and FIG. 5), the driving
current I.sub.OLED flowing through the OLED 101 is not changed
along with variation of the power supply voltage Vdd influenced by
the IR drop, and is not changed along with a threshold voltage
(Vth) shift of the driving transistor T1 used for driving the OLED
101. In this way, brightness performance of the applied OLED
display is greatly improved.
[0058] Besides, any OLED display panel and OLED display applying
the (OLED) pixel circuit 10 of the aforementioned embodiments
should be considered to be within the scope of the invention.
[0059] Moreover, although the OLED pixel circuits of the
aforementioned exemplary embodiments all apply the P-type
transistors for implementation, the invention is not limited
thereto. In other words, those with ordinary skill in the art can
deduce a situation that the OLED pixel circuit applies N-type
transistors for implementation according to the teachings of the
aforementioned embodiments, and such variation or modification
embodiments should also be considered to be within the scope of the
invention without departing from the spirit and conception of the
present invention.
[0060] It will be apparent to those skilled in the art that various
modifications and variations can be made to the structure of the
invention without departing from the scope or spirit of the
invention. In view of the foregoing, it is intended that the
invention cover modifications and variations of this invention
provided they fall within the scope of the following claims and
their equivalents.
* * * * *