U.S. patent application number 14/235248 was filed with the patent office on 2014-10-30 for small molecules and their use as organic semiconductors.
This patent application is currently assigned to MERCK PATENT GMBH. The applicant listed for this patent is Nicolas Blouin, William Mitchell, Amy Phillips, Steven Tierney. Invention is credited to Nicolas Blouin, William Mitchell, Amy Phillips, Steven Tierney.
Application Number | 20140319428 14/235248 |
Document ID | / |
Family ID | 46466423 |
Filed Date | 2014-10-30 |
United States Patent
Application |
20140319428 |
Kind Code |
A1 |
Blouin; Nicolas ; et
al. |
October 30, 2014 |
SMALL MOLECULES AND THEIR USE AS ORGANIC SEMICONDUCTORS
Abstract
The invention relates to novel compounds based on
thieno[3,2-b]thiophene-2,5-dione and/or furo[3,2-b]furan-2,5-dione
or their thioketone derivatives, methods for their preparation and
intermediates used therein, mixtures and formulations containing
them, the use of the compounds, mixtures and formulations as
semiconductor in organic electronic (OE) devices, especially in
organic photovoltaic (OPV) devices and organic photodetectors
(OPD), and to OE, OPV and OPD devices comprising these compounds,
mixtures or formulations.
Inventors: |
Blouin; Nicolas;
(Southampton, GB) ; Mitchell; William; (Chandler's
Ford, GB) ; Phillips; Amy; (Hampshire, GB) ;
Tierney; Steven; (Southampton, GB) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Blouin; Nicolas
Mitchell; William
Phillips; Amy
Tierney; Steven |
Southampton
Chandler's Ford
Hampshire
Southampton |
|
GB
GB
GB
GB |
|
|
Assignee: |
MERCK PATENT GMBH
Darmstadt
DE
|
Family ID: |
46466423 |
Appl. No.: |
14/235248 |
Filed: |
July 5, 2012 |
PCT Filed: |
July 5, 2012 |
PCT NO: |
PCT/EP2012/002836 |
371 Date: |
March 21, 2014 |
Current U.S.
Class: |
252/500 ;
549/50 |
Current CPC
Class: |
C07D 495/04 20130101;
C07D 497/04 20130101; H01L 51/0074 20130101; C07D 493/04
20130101 |
Class at
Publication: |
252/500 ;
549/50 |
International
Class: |
H01L 51/00 20060101
H01L051/00 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 27, 2011 |
EP |
11006158.7 |
Claims
1. A compound of formula I
R.sup.1--(Ar.sup.1).sub.a--(Ar.sup.2).sub.b--(Ar.sup.3).sub.c--U--(Ar.sup-
.4).sub.d--(Ar.sup.5).sub.e--(Ar.sup.6).sub.f--R.sup.2 I wherein U
is a divalent group of the following formula ##STR00048## X is O or
S, Y is O or S, Ar.sup.1-6 independently of each other, and on each
occurrence identically or differently, denote
--CY.sup.1.dbd.CY.sup.2--, --C.ident.C--, or aryl or heteroaryl
that is optionally substituted by one or more groups R.sup.1, or
one or more of Ar.sup.1-6 denote U, R.sup.1, R.sup.2 independently
of each other, and on each occurrence identically of differently,
denote F, Br, Cl, --CN, --NC, --NCO, --NCS, --OCN, --SCN,
--C(O)NR.sup.0R.sup.00, --C(O)X.sup.0, --C(O)R.sup.0,
--C(O)OR.sup.0, --O--C(O)R.sup.0, --NH.sub.2, --NR.sup.0R.sup.00,
SH, --SR.sup.0, --SO.sub.3H, --SO.sub.2R.sup.0, --OH, --NO.sub.2,
--CF.sub.3, --SF.sub.5, P-Sp-, or optionally substituted silyl,
carbyl or hydrocarbyl with 1 to 40 C atoms that is optionally
substituted and optionally comprises one or more hetero atoms, and
wherein one or more C atoms are optionally replaced by a hetero
atom, R.sup.0, R.sup.00 independently of each other denote H or
optionally substituted C.sub.1-40 carbyl or hydrocarbyl, P is a
polymerisable or crosslinkable group, Sp is a spacer group or a
single bond, X.sup.0 is halogen, preferably F, Cl or Br, Y.sup.1,
Y.sup.2 independently of each other denote H, F, Cl or CN, a-f are
independently of each other 0, 1, 2 or 3, wherein at least one of
a-f is different from 0, wherein, if X is S and Y is O and
a=b=e=f=0 and c=d=1, then Ar.sup.3 and Ar.sup.4 are different from
phenylene that is optionally substituted by R.sup.1, and if X is O
and Y is O, then at least one of Ar.sup.3 and Ar.sup.4 is different
from phenylene, pyridine, naphthalene and indole which are
optionally substituted by R.sup.1.
2. The compound according to claim 1, wherein U is selected from
formulae Ia, Ib, Ic and Id ##STR00049##
3. The compound according to claim 1, wherein R.sup.1 and R.sup.2
are independently of each other selected from H, straight-chain,
branched or cyclic alkyl with 1 to 35 C atoms, in which one or more
non-adjacent C atoms are optionally replaced by --O--, --S--,
--C(O)--, --C(O)--O--, --O--C(O)--, --O--C(O)--O--,
--CR.sup.0.dbd.CR.sup.00-- or --C.ident.C-- and in which one or
more H atoms are optionally replaced by F, Cl, Br, I or CN, or
denote aryl, heteroaryl, aryloxy, heteroaryloxy, arylcarbonyl,
heteroarylcarbonyl, arylcarbonyloxy, heteroarylcarbonyloxy,
aryloxycarbonyl or heteroaryloxycarbonyl having 4 to 30 ring atoms
and being optionally substituted by one or more groups L, wherein L
is selected from halogen, --CN, --NC, --NCO, --NCS, --OCN, --SCN,
--C(.dbd.O)NR.sup.0R.sup.00, --C(.dbd.O)X.sup.0,
--C(.dbd.O)R.sup.0, --C(O)OR.sup.0, --O--C(O)R.sup.0, --NH.sub.2,
--NR.sup.0R.sup.00, --SH, --SR.sup.0, --SO.sub.3H,
--SO.sub.2R.sup.0, --OH, --NO.sub.2, --CF.sub.3, --SF.sub.5, P-Sp-,
or alkyl, alkoxy, thiaalkyl, alkylcarbonyl, alkoxycarbonyl or
alkoxycarbonyloxy with 1 to 20 C atoms that is optionally
fluorinated, and R.sup.0, R.sup.00, X.sup.0, P and Sp having the
meanings given in claim 1.
4. The compound according to claim 1, wherein one or more of
Ar.sup.1, Ar.sup.2, Ar.sup.3 and/or one or more of Ar.sup.4,
Ar.sup.5 and Ar.sup.6 denote aryl or heteroaryl, preferably having
electron donor properties, selected from the group consisting of
the following formulae ##STR00050## ##STR00051## ##STR00052##
##STR00053## ##STR00054## ##STR00055## ##STR00056## ##STR00057##
##STR00058## ##STR00059## ##STR00060## ##STR00061## ##STR00062##
##STR00063## wherein one of X.sup.11 and X.sup.12 is S and the
other is Se, and R.sup.11, R.sup.12, R.sup.13, R.sup.14, R.sup.15,
R.sup.16, R.sup.17 and R.sup.18 independently of each other denote
H or have one of the meanings of R.sup.1 as defined in claim 1.
5. The compound according to claim 1, wherein one or more of
Ar.sup.1, Ar.sup.2, Ar.sup.3 and/or one or more of Ar.sup.4,
Ar.sup.5 and Ar.sup.6 denote aryl or heteroaryl, preferably having
electron acceptor properties, selected from the group consisting of
the following formulae ##STR00064## ##STR00065## ##STR00066##
##STR00067## ##STR00068## ##STR00069## ##STR00070## ##STR00071##
##STR00072## wherein one of X.sup.11 and X.sup.12 is S and the
other is Se, and R.sup.11, R.sup.12, R.sup.13, R.sup.14 and
R.sup.15 independently of each other denote H or have one of the
meanings of R.sup.1 as defined in claim 1.
6. The compound according to claim 1, wherein one or more of
Ar.sup.1, Ar.sup.2, Ar.sup.3 and/or one or more of Ar.sup.4,
Ar.sup.5 and Ar.sup.6 are selected from the group consisting of
formulae Ia, Ib, Ic, Id, D1, D5, D6, D8, D13, D14, D15, D16, D19,
D28, D68, A3 and A4.
7. The compound according to claim 1, which is selected from the
following subformulae
R.sup.1--(Ar.sup.1).sub.a--(Ar.sup.2).sub.b--(Ar.sup.3).sub.c--U--(Ar.sup-
.4).sub.d--(Ar.sup.5).sub.e--R.sup.2 I1
R.sup.1--(Ar.sup.1).sub.a--(Ar.sup.3).sub.c--U--(Ar.sup.4).sub.d--(Ar.sup-
.5).sub.e--R.sup.2 I2
R.sup.1--(Ar.sup.1).sub.a--(Ar.sup.3).sub.c--U--(Ar.sup.4).sub.d--R.sup.2
I3 R.sup.1--(Ar.sup.3).sub.c--U--(Ar.sup.4).sub.d--R.sup.2 I4
R.sup.1--(Ar.sup.1).sub.a--U--(Ar.sup.3).sub.c--U--(Ar.sup.4).sub.d--(Ar.-
sup.5).sub.e--R.sup.2 I5
R.sup.1--(Ar.sup.1).sub.a--U--(Ar.sup.3).sub.c--U--(Ar.sup.4).sub.d--R.su-
p.2 I6
R.sup.1--(Ar.sup.1).sub.a--(Ar.sup.2).sub.b--U--(Ar.sup.4).sub.d--
-U--(Ar.sup.5).sub.e--(Ar.sup.6).sub.f--R.sup.2 I7.
8. A formulation comprising one or more compounds according to
claim 1 and one or more organic solvents.
9. The formulation according to claim 8, further comprising one or
more organic binders or precursors thereof, preferably having a
permittivity .di-elect cons. at 1,000 Hz and 20.degree. C. of 3.3
or less.
10. A method of using a compound according to claim 1 as charge
transport, semiconducting, electrically conducting, photoconducting
or light emitting material which comprises incorporating a compound
of claim 1 in an optical, electrooptical, electronic,
electroluminescent or photoluminescent device, or in a component of
such a device, or in an assembly comprising such a device or
component.
11. A charge transport, semiconducting, electrically conducting,
photoconducting or light emitting material comprising a compound or
formulation according to claim 1.
12. An optical, electrooptical, electronic, electroluminescent or
photoluminescent device, or a component thereof, or an assembly
comprising it, which comprises a charge transport, semiconducting,
electrically conducting, photoconducting or light emitting
material, or comprises a compound or formulation according claim
1.
13. A device, a component thereof, or an assembly comprising it
according to claim 12, wherein the device is selected from organic
field effect transistors (OFET), thin film transistors (TFT),
organic light emitting diodes (OLED), organic light emitting
transistors (OLET), organic photovoltaic devices (OPV), organic
photodetectors (OPD), organic solar cells, laser diodes, Schottky
diodes, photoconductors and photodetectors, the component is
selected from charge injection layers, charge transport layers,
interlayers, planarising layers, antistatic films, polymer
electrolyte membranes (PEM), conducting substrates, conducting
patterns, and the assembly is selected from integrated circuits
(IC), radio frequency identification (RFID) tags or security
markings or security devices containing them, flat panel displays
or backlights thereof, electrophotographic devices,
electrophotographic recording devices, organic memory devices,
sensor devices, biosensors and biochips.
14. A compound of formula II
R.sup.3--(Ar.sup.7).sub.g--U--(Ar.sup.8).sub.h--R.sup.4 II wherein
U is as defined in claim 1, Ar.sup.7, Ar.sup.8 independently of
each other, and on each occurrence identically or differently, have
one of the meanings of Ar.sup.1 as given in claim 1, g, h are
independently of each other 0, 1, 2 or 3, and R.sup.3, R.sup.4 are
independently of each other a leaving group, preferably selected
from the group consisting of F, Cl, Br, I, H, NR'H, --CH.sub.2Cl,
--CHO, --CH.dbd.CH.sub.2, --SiR'R''R''', --SnR'R''R''', --BR'R'',
--B(OR')(OR''), --B(OH).sub.2, O-tosylate, O-triflate, O-mesylate,
O-nonaflate, --SiMe.sub.2F, --SiMeF.sub.2, --O--SO.sub.2--R',
--CR'.dbd.CR''R''', --C.ident.CH, --C.ident.CSiR'R''R''',
--ZnX.sup.0 and P-Sp-, wherein X.sup.0, P and Sp are as defined in
claim 1, R', R'' and R''' have independently of each other one of
the meanings of R.sup.0 as given in claim 1, and preferably denote
alkyl with 1 to 20 C atoms or aryl with 4 to 20 C atoms, and two of
R', R'' and R''' may also form a ring together with the hetero atom
to which they are attached, and "Me" denotes methyl, wherein, if X
is S and Y is O, at least one of g and h is not 0, and wherein, if
X.dbd.Y.dbd.O and g and h are not 0, then at least one of Ar.sup.7
and Ar.sup.8 is different from phenylene, pyridine, naphthalene and
indole which are optionally substituted by R.sup.1 as defined in
claim 1.
15. A process of preparing a compound according to claim 1, by
reacting a compound of formula II with one or more compounds
selected of formula C1 and C2 in an aryl-aryl coupling reaction
R.sup.3--(Ar.sup.7).sub.g--U--(Ar.sup.8).sub.h--R.sup.4 II
R.sup.1--(Ar.sup.1).sub.a--(Ar.sup.2).sub.b--(Ar.sup.3).sub.c--R.sup.3
C1
R.sup.4--(Ar.sup.4).sub.d--(Ar.sup.5).sub.e--(Ar.sup.6).sub.f--R.sup.-
2 C2 wherein R.sup.3 and R.sup.4 are selected from Cl, Br, I, H,
NR'H, --SnR'R''R''', --B(OR')(OR''), --B(OH).sub.2, O-tosylate,
O-triflate, O-mesylate, O-nonaflate, --SiMe.sub.2F, --SiMeF.sub.2,
--O--SO.sub.2--R', --CR'.dbd.CR''R''', --C.ident.CH,
--C.ident.CSiR'R''R''', --ZnX.sup.0, wherein Ar.sup.7, Ar.sup.8,
independently of each other, and on each occurrence identically or
differently, have one of the meanings of Ar.sup.1 as given in claim
1 g, h, are independently of each other 0, 1, 2 or 3, and R', R'',
R''' have independently of each other one of the meanings of
R.sup.0 as given in claim 1.
Description
FIELD OF THE INVENTION
[0001] The invention relates to novel compounds based on
thieno[3,2-b]thiophene-2,5-dione and/or furo[3,2-b]furan-2,5-dione
or their thioketone derivatives, methods for their preparation and
intermediates used therein, mixtures and formulations containing
them, the use of the compounds, mixtures and formulations as
semiconductor in organic electronic (OE) devices, especially in
organic photovoltaic (OPV) devices and organic photodetectors
(OPD), and to OE, OPV and OPD devices comprising these compounds,
mixtures or formulations.
BACKGROUND AND PRIOR ART
[0002] In recent years there has been growing interest in the use
of organic semiconductors, including conjugated polymers and small
molecules, for various electronic applications.
[0003] One particular area of importance is the field of organic
photovoltaics (OPV). Organic semiconductors (OSCs) have found use
in OPVs as they allow devices to be manufactured by
solution-processing techniques such as spin casting, dip coating or
ink jet printing. Solution processing can be carried out cheaper
and on a larger scale compared to the evaporative techniques used
to make inorganic thin film devices. Numerous small molecules have
been developed for solution processable OPV devices as disclosed
for example in Thuc-Quyen Nguyen et al., Chem. Mater. 2011, 23,
470-482. However, device power conversion efficiency is still
generally low. Two recent examples have demonstrated an important
step towards higher power conversion efficiencies: squarine based
small molecules combined with C.sub.70 fullerenes have shown a
power conversion efficiency of 5.2% in a solution processed OPV
device as disclosed in Stephen R. Forrest et al., Adv. Ener. Mater.
2011, 1, 184-187, and DPP based small molecules combined with
PCBM-C60 fullerenes have shown a power conversion efficiency of
4.1% in a solution processed OPV device as disclosed in Loser S. et
al.; J. Am. Chem. Soc. 2011, 133, 8142-8145.
[0004] Another particular area of importance is the field of
organic thin film transistors (OTFTs) or organic field effect
transistors (OFETs), which are used for example in RFID tags or in
backplanes of liquid crystal displays. Compared to the classical,
Si-based FETs, organic TFTs can be fabricated much more
cost-effectively by solution coating methods such as spin-coating,
drop casting, dip-coating, and more efficiently, ink-jet printing.
Solution processing of OSCs requires the molecular materials to be
soluble enough in non-toxic solvents, stable in the solution state,
easy to crystallise when solvents are evaporated, and provide high
charge carrier mobility with low off current.
[0005] However, the OSC materials that have been suggested in prior
art for use in OPV devices do still suffer from certain drawbacks.
For example many polymers suffer from limited solubility in
commonly used organic solvents, which can inhibit their suitability
for device manufacturing methods based on solution processing, or
show only limited power conversion efficiency in OPV
bulk-hetero-junction devices, or have only limited charge carrier
mobility, or are difficult to synthesize and require synthesis
methods which are unsuitable for mass production.
[0006] In case of OSC materials for OFETs and OTFTs, the currently
available OSC materials do also still have some major drawbacks,
like a low photo and environment stability particularly in solution
states, and a low temperature of the phase transition and melting
point. Also for future OLED backplane applications, which demand
higher source and drain current, the mobility and processibility of
currently available materials needs further improvement.
[0007] Therefore, there is still a need for organic semiconducting
(OSC) materials that are easy to synthesize, especially by methods
suitable for mass production, show good structural organization and
film-forming properties, exhibit good electronic properties,
especially a high charge carrier mobility, good processibility,
especially a high solubility in organic solvents, and high
stability in air.
[0008] For use in OPV cells, there is a need for OSC materials
having a low bandgap, which enable improved light harvesting by the
photoactive layer and can lead to higher cell efficiencies,
compared to the polymers from prior art.
[0009] For use in OTFTs, there is a need for materials that show
good electronic properties, especially high charge carrier
mobility, good processability and high thermal and environmental
stability, especially a high solubility in organic solvents.
[0010] It was an aim of the present invention to provide compounds
for use as organic semiconducting materials that do not have the
drawbacks of prior art materials as described above, are easy to
synthesize, especially by methods suitable for mass production, and
do especially show advantageous properties, especially for OPV and
OTFT use, as described above. Another aim of the invention was to
extend the pool of OSC materials available to the expert. Other
aims of the present invention are immediately evident to the expert
from the following detailed description.
[0011] The inventors of the present invention have found that one
or more of the above aims can be achieved by providing monomeric
compounds (small molecules) containing
thieno[3,2-b]thiophene-2,5-dione-3,6-diyl or
furo[3,2-b]furan-2,5-dione-3,6-diyl repeating units and their
thioketone derivatives having the following structure (the numbers
in the first formula indicate the positions on the thienothiophene
or furofuran core):
##STR00001##
[0012] It was found that conjugated polymers based on these units
show good processability and high solubility in organic solvents,
and are thus especially suitable for large scale production using
solution processing methods. At the same time, they show a low
bandgap, high charge carrier mobility, high external quantum
efficiency in BHJ solar cells, good morphology when used in
p/n-type blends e.g. with fullerenes, high oxidative stability, and
are promising materials for organic electronic OE devices,
especially for OPV devices with high power conversion
efficiency.
[0013] DE 3917323 A1 discloses
2,5-biscyanimino-2,5-dihydrothieno(3,2-b)thiophene in the doped
form with metal or in a charge transfer complex, and the use of the
charge transfer complex in antistatic finishing, electrode and
storage materials in batteries, for the production of solar cells
or the conversion of radiation. DE 3917323 A1 further discloses the
synthesis of this compound starting from the educt
thieno[3,2-b]thiophene-2,5-dione having a H or halogen atom or a
methyl group in 3- and/or 6-position.
[0014] Guenther, E.; Huenig, S.; Chemische Berichte 1992, 125,
1235-41 discloses
2,5-biscyanimino-2,5-dihydrothieno(3,2-b)thiophene as multistep
redox system, and also discloses its synthesis starting from the
educt thieno[3,2-b]thiophene-2,5-dione having a H or halogen atom
or a methyl or thiomethyl group in 3- and/or 6-position.
[0015] JP 04-338761 A discloses an electrophotographic body
comprising a broad variety of charge transfer materials, including
also a generic formula that covers substituted
thieno[3,2-b]thiophene-2,5-dione and furo[3,2-b]furan-2,5-dione as
well as their 2,5-biscyanimino derivatives. Specifically disclosed
are 3,6-bis-(t-butanoyl)-thieno[3,2-b]thiophene-2,5-dione and
furo[3,2-b]furan-2,5-dione-3,6-dicarboxylic acid dioctyl ester.
[0016] WO 2007/003520 A1 discloses pyrrolo[3,2-b]pyrrole-2,5-dione
derivatives for use as fluorescent dye in inks, colourants,
pigmented plastics for coatings, non-impact-printing materials,
colour filters, cosmetics, polymeric ink particles, toners, as
fluorescent tracers, in colour changing media, dye lasers and
electroluminescent devices. The generic formula disclosed therein
does also encompass furo[3,2-b]furan-2,5-dione that is substituted
with a cycloalkyl or phenyl group in 3-position and with a
cycloalkyl, phenyl, aryl or heteroaryl group in 6-position.
[0017] U.S. Pat. No. 3,749,740, U.S. Pat. No. 3,780,064, U.S. Pat.
No. 3,714,173, U.S. Pat. No. 3,821,397, Pattenden, G. et al.; J.
Chem. Soc. Perkin Trans. 1 1991, 2363-2372 and Foden, F. R. et al.;
J. Med. Chem. 1975, 18, 199-203 disclose furo[3,2-b]furan-2,5-dione
(therein also named pulvinic acid lactone) with substituted phenyl
or pyridine rings in 3- and 6-position as an intermediate in the
synthesis of thiolpulvinic acid derivatives for use as
anti-arthritic drugs.
[0018] Lohrisch, H. J. et al.; Liebigs Annalen der Chemie 1986,
195-204, report a pulvinic acid lactone
(furo[3,2-b]furan-2,5-dione) substituted with naphthyl and methoxy
phenyl rings in 3- and 6-position which can be obtained from
terphenyl quinone dyes.
[0019] Jerram, W. A.; Can. J. Chem. 1975, 53, 727-737 discloses the
orange fluorescent metabolite cochliodinone, which corresponds to a
furo[3,2-b]furan-2,5-dione having substituted indole groups in 3-
and 6-position.
[0020] However, compounds as claimed in the present invention and
their use as organic semiconductors in OE devices, especially in
OFET or OPV devices, have not been disclosed in prior art.
SUMMARY OF THE INVENTION
[0021] The invention relates to compounds of formula I
R.sup.1--(Ar.sup.1).sub.a--(Ar.sup.2).sub.b--(Ar.sup.3).sub.c--U--(Ar.su-
p.4).sub.d--(Ar.sup.5).sub.e--(Ar.sup.6).sub.f--R.sup.2 I
[0022] wherein [0023] U is a divalent group of the following
structure
[0023] ##STR00002## [0024] X is O or S, [0025] Y is O or S, [0026]
Ar.sup.1-6 independently of each other, and on each occurrence
identically or differently, denote --CY.sup.1.dbd.CY.sup.2--,
--C.ident.C--, or aryl or heteroaryl that preferably has 5 to 30
ring atoms and is optionally substituted by one or more groups
R.sup.1, or one or more of Ar.sup.1-6 denote U, [0027] R.sup.1,
R.sup.2 independently of each other denote H, F, Br, Cl, --CN,
--NC, --NCO, --NCS, --OCN, --SCN, --C(O)NR.sup.0R.sup.00,
--C(O)X.sup.0, --C(O)R.sup.0, --C(O)OR.sup.0, --O--C(O)R.sup.0,
--NH.sub.2, --NR.sup.0R.sup.00, --SH, --SR.sup.0, --SO.sub.3H,
--SO.sub.2R.sup.0, --OH, --NO.sub.2, --CF.sub.3, --SF.sub.5, P-Sp-,
or optionally substituted silyl, carbyl or hydrocarbyl with 1 to 40
C atoms that is optionally substituted and optionally comprises one
or more hetero atoms, and wherein one or more C atoms are
optionally replaced by a hetero atom, [0028] R.sup.0, R.sup.00
independently of each other denote H or optionally substituted
C.sub.1-40 carbyl or hydrocarbyl, [0029] P is a polymerisable or
crosslinkable group, [0030] Sp is a spacer group or a single bond,
[0031] X.sup.0 is halogen, preferably F, Cl or Br, [0032] Y.sup.1,
Y.sup.2 independently of each other denote H, F, Cl or CN, [0033]
a-f are independently of each other 0, 1, 2 or 3, wherein at least
one of a-f is different from 0,
[0034] wherein, if X is S and Y is O and a=b=e=f=0 and c=d=1, then
Ar.sup.3 and Ar.sup.4 are different from phenylene that is
optionally substituted by R.sup.1, and if X is O and Y is O, then
at least one of Ar.sup.3 and Ar.sup.4 is different from phenylene,
pyridine, naphthalene and indole which are optionally substituted
by R.sup.1.
[0035] The invention further relates to the use of the compounds of
formula I or of a formulation comprising one or more compounds of
formula I, as organic semiconductor.
[0036] The invention further relates to a formulation comprising
one or more novel compounds of formula I as described above and
below and one or more solvents, preferably selected from organic
solvents.
[0037] Preferably the formulation comprises one or more compounds
of formula I, one or more organic binders, or precursors thereof,
preferably having a permittivity .di-elect cons. at 1,000 Hz and
20.degree. C. of 3.3 or less, and optionally one or more
solvents.
[0038] The invention further relates to the use of the compounds
and formulations according to the present invention as charge
transport, semiconducting, electrically conducting, photoconducting
or light emitting material, or in an optical, electrooptical,
electronic, electroluminescent or photoluminescent device, or in a
component of such a device or in an assembly comprising such a
device or component.
[0039] The invention further relates to a charge transport,
semiconducting, electrically conducting, photoconducting or light
emitting material comprising a compound or formulation according to
the present invention.
[0040] The invention further relates to an optical, electrooptical,
electronic, electroluminescent or photoluminescent device, or a
component thereof, or an assembly comprising it, which comprises a
compound or formulation, or comprises a charge transport,
semiconducting, electrically conducting, photoconducting or light
emitting material, according to the present invention.
[0041] The optical, electrooptical, electronic, electroluminescent
and photoluminescent devices include, without limitation, organic
field effect transistors (OFET), organic thin film transistors
(OTFT), organic light emitting diodes (OLED), organic light
emitting transistors (OLET), organic photovoltaic devices (OPV),
organic photodetectors (OPD) organic solar cells, laser diodes,
Schottky diodes, and photoconductors.
[0042] The components of the above devices include, without
limitation, charge injection layers, charge transport layers,
interlayers, planarising layers, antistatic films, polymer
electrolyte membranes (PEM), conducting substrates and conducting
patterns.
[0043] The assemblies comprising such devices or components
include, without limitation, integrated circuits (IC), radio
frequency identification (RFID) tags or security markings or
security devices containing them, flat panel displays or backlights
thereof, electrophotographic devices, electrophotographic recording
devices, organic memory devices, sensor devices, biosensors and
biochips.
[0044] In addition the compounds and formulations of the present
invention can be used as electrode materials in batteries and in
components or devices for detecting and discriminating DNA
sequences.
DETAILED DESCRIPTION OF THE INVENTION
[0045] The compounds of formula I are especially suitable as
(electron) acceptor in p-type semiconducting materials or mixtures,
and for the preparation of mixtures of p-type and n-type
semiconductors which are useful for application in BHJ OPV devices,
furthermore as p-type semiconductor in OTFTs and OFETs.
[0046] In addition, they show the following advantageous
properties: [0047] i) This invention uses organic semiconductors
based upon core structures with two fused five-membered rings, in
which the quinoidal structure of the core is pre-established. This
results in an organic semiconductor with increased quinoidal
character and therefore a lower band gap, thus resulting in
improved light harvesting properties. [0048] ii) Additional
solubility can be introduced into the organic semiconductor by
inclusion of Ar group containing solubilising groups. [0049] iii)
The units of thieno[3,2-b]thiophene-2,5-dione and
furo[3,2-b]furan-2,5-dione are planar structures that enable strong
pi-pi stacking in the solid state leading to better improved charge
transport properties in the form of higher charge carrier mobility.
[0050] iv) The units of furo[3,2-b]furan-2,5-dione and
thieno[3,2-b]thiophene-2,5-dione increase the intermolecular
interaction due to their respective carbonyl functionality, thus
enabling strong pi-pi stacking in the solid state leading to better
improved charge transport properties in the form of higher charge
carrier mobility. [0051] v) Additional fine-tuning of the
electronic energies (HOMO/LUMO levels) by either careful selection
of Ar unit on each side of thieno[3,2-b]thiophene-2,5-dione or
furo[3,2-b]furan-2,5-dione core.
[0052] The compounds of formula I are easy to synthesize and
exhibit several advantageous properties, like a low bandgap, a high
charge carrier mobility, a high solubility in organic solvents, a
good processability for the device manufacture process, a high
oxidative stability and a long lifetime in electronic devices.
[0053] Above and below, the term "polymer" generally means a
molecule of high relative molecular mass, the structure of which
essentially comprises the multiple repetition of units derived,
actually or conceptually, from molecules of low relative molecular
mass (PAC, 1996, 68, 2291). The term "oligomer" generally means a
molecule of intermediate relative molecular mass, the structure of
which essentially comprises a small plurality of units derived,
actually or conceptually, from molecules of lower relative
molecular mass (PAC, 1996, 68, 2291). In a preferred sense
according to the present invention a polymer means a compound
having >1, preferably .gtoreq.5 repeating units, and an oligomer
means a compound with >1 and <10, preferably <5, repeating
units.
[0054] Above and below, in a structural unit or group of a compound
an asterisk ("*") denotes a linkage to an adjacent structural unit
or group.
[0055] The terms "repeating unit" and "monomeric unit" mean the
constitutional repeating unit (CRU), which is the smallest
constitutional unit the repetition of which constitutes a regular
macromolecule, a regular oligomer molecule, a regular block or a
regular chain (PAC, 1996, 68, 2291).
[0056] The terms "donor" and "acceptor", unless stated otherwise,
mean an electron donor or electron acceptor, respectively.
"Electron donor" means a chemical entity that donates electrons to
another compound or another group of atoms of a compound. "Electron
acceptor" means a chemical entity that accepts electrons
transferred to it from another compound or another group of atoms
of a compound. (see also U.S. Environmental Protection Agency,
2009, Glossary of technical terms,
http://www.epa.gov/oust/cat/TUMGLOSS.HTM).
[0057] The term "leaving group" means an atom or group (charged or
uncharged) that becomes detached from an atom in what is considered
to be the residual or main part of the molecule taking part in a
specified reaction (see also PAC, 1994, 66, 1134).
[0058] Preferred leaving groups are selected from the group
consisting of F, Br, Cl, --SiR'R''R''', --SnR'R''R''', --BR'R'',
--B(OR')(OR''), --B(OH).sub.2, O-tosylate, O-triflate, O-mesylate,
O-nonaflate, --SiMe.sub.2F, --SiMeF.sub.2, --O--SO.sub.2--R',
wherein R', R'' and R''' have independently of each other one of
the meanings of R.sup.0 as given in formula I or one of the
preferred meanings as described above and below, and preferably
denote alkyl with 1 to 20 C atoms or aryl with 4 to 20 C atoms, and
two of R', R'' and R''' may also form a ring together with the
hetero atom to which they are attached, and "Me" denotes
methyl.
[0059] Unless stated otherwise, the molecular weight is given as
the number average molecular weight M.sub.n or weight average
molecular weight M.sub.W, which is determined by gel permeation
chromatography (GPC) against polystyrene standards in eluent
solvents such as tetrahydrofuran, trichloromethane (TCM,
chloroform), chlorobenzene or 1,2,4-trichlorobenzene. Unless stated
otherwise, 1,2,4-trichlorobenzene is used as solvent. The degree of
polymerization, also referred to as total number of repeating
units, n, means the number average degree of polymerization given
as n=M.sub.n/M.sub.U, wherein M.sub.n is the number average
molecular weight and M.sub.U is the molecular weight of the single
repeating unit, see J. M. G. Cowie, Polymers: Chemistry &
Physics of Modern Materials, Blackie, Glasgow, 1991.
[0060] The term "conjugated" means a compound containing mainly C
atoms with sp.sup.2-hybridisation (or optionally also
sp-hybridisation), which may also be replaced by hetero atoms. In
the simplest case this is for example a compound with alternating
C--C single and double (or triple) bonds, but does also include
compounds with units like 1,3-phenylene. "Mainly" means in this
connection that a compound with naturally (spontaneously) occurring
defects, which may lead to interruption of the conjugation, is
still regarded as a conjugated compound.
[0061] The term "carbyl group" as used above and below denotes any
monovalent or multivalent organic radical moiety which comprises at
least one carbon atom either without any non-carbon atoms (like for
example --C.ident.C--), or optionally combined with at least one
non-carbon atom such as N, O, S, P, Si, Se, As, Te or Ge (for
example carbonyl etc.). The term "hydrocarbyl group" denotes a
carbyl group that does additionally contain one or more H atoms and
optionally contains one or more hetero atoms like for example N, O,
S, P, Si, Se, As, Te or Ge.
[0062] The term "hetero atom" means an atom in an organic compound
that is not a H- or C-atom, and preferably means N, O, S, P, Si,
Se, As, Te or Ge.
[0063] A carbyl or hydrocarbyl group comprising a chain of 3 or
more C atoms may be straight-chain, branched and/or cyclic,
including spiro and/or fused rings.
[0064] Preferred carbyl and hydrocarbyl groups include alkyl,
alkoxy, alkylcarbonyl, alkoxycarbonyl, alkylcarbonyloxy and
alkoxycarbonyloxy, each of which is optionally substituted and has
1 to 40, preferably 1 to 25, very preferably 1 to 18 C atoms,
furthermore optionally substituted aryl or aryloxy having 6 to 40,
preferably 6 to 25 C atoms, furthermore alkylaryloxy, arylcarbonyl,
aryloxycarbonyl, arylcarbonyloxy and aryloxycarbonyloxy, each of
which is optionally substituted and has 6 to 40, preferably 7 to 40
C atoms, wherein all these groups do optionally contain one or more
hetero atoms, preferably selected from N, O, S, P, Si, Se, As, Te
and Ge.
[0065] The carbyl or hydrocarbyl group may be a saturated or
unsaturated acyclic group, or a saturated or unsaturated cyclic
group. Unsaturated acyclic or cyclic groups are preferred,
especially aryl, alkenyl and alkynyl groups (especially ethynyl).
Where the C.sub.1-C.sub.40 carbyl or hydrocarbyl group is acyclic,
the group may be straight-chain or branched. The C.sub.1-C.sub.40
carbyl or hydrocarbyl group includes for example: a
C.sub.1-C.sub.40 alkyl group, a C.sub.1-C.sub.40 alkoxy or oxaalkyl
group, a C.sub.2-C.sub.40 alkenyl group, a C.sub.2-C.sub.40 alkynyl
group, a C.sub.3-C.sub.40 allyl group, a C.sub.4-C.sub.40
alkyldienyl group, a C.sub.4-C.sub.40 polyenyl group, a
C.sub.6-C.sub.18 aryl group, a C.sub.6-C.sub.40 alkylaryl group, a
C.sub.6-C.sub.40 arylalkyl group, a C.sub.4-C.sub.40 cycloalkyl
group, a C.sub.4-C.sub.40 cycloalkenyl group, and the like.
Preferred among the foregoing groups are a C.sub.1-C.sub.20 alkyl
group, a C.sub.2-C.sub.20 alkenyl group, a C.sub.2-C.sub.20 alkynyl
group, a C.sub.3-C.sub.20 allyl group, a C.sub.4-C.sub.20
alkyldienyl group, a C.sub.6-C.sub.12 aryl group, and a
C.sub.4-C.sub.20 polyenyl group, respectively. Also included are
combinations of groups having carbon atoms and groups having hetero
atoms, like e.g. an alkynyl group, preferably ethynyl, that is
substituted with a silyl group, preferably a trialkylsilyl
group.
[0066] Aryl and heteroaryl preferably denote a mono-, bi- or
tricyclic aromatic or heteroaromatic group with 4 to 30 ring C
atoms that may also comprise condensed rings and is optionally
substituted with one or more groups L,
[0067] wherein L is selected from halogen, --CN, --NC, --NCO,
--NCS, --OCN, --SCN, --C(.dbd.O)NR.sup.0R.sup.00,
--C(.dbd.O)X.sup.0, --C(.dbd.O)R.sup.0, --C(O)OR.sup.0,
--O--C(O)R.sup.0, --NH.sub.2, --NR.sup.0R.sup.00, --SH, --SR.sup.0,
--SO.sub.3H, --SO.sub.2R.sup.0, --OH, --NO.sub.2, --CF.sub.3,
--SF.sub.5, P-Sp-, optionally substituted silyl, or carbyl or
hydrocarbyl with 1 to 40 C atoms that is optionally substituted and
optionally comprises one or more hetero atoms, and is preferably
alkyl, alkoxy, thiaalkyl, alkylcarbonyl, alkoxycarbonyl or
alkoxycarbonyloxy with 1 to 20 C atoms that is optionally
fluorinated, and R.sup.0, R.sup.00, X.sup.0, P and Sp have the
meanings given above and below.
[0068] Very preferred substituents L are selected from halogen,
most preferably F, or alkyl, alkoxy, oxaalkyl, thioalkyl,
fluoroalkyl and fluoroalkoxy with 1 to 12 C atoms or alkenyl,
alkynyl with 2 to 12 C atoms.
[0069] Especially preferred aryl and heteroaryl groups are phenyl
in which, in addition, one or more CH groups may be replaced by N,
naphthalene, thiophene, selenophene, thienothiophene,
dithienothiophene, fluorene and oxazole, all of which can be
unsubstituted, mono- or polysubstituted with L as defined above.
Very preferred rings are selected from pyrrole, preferably
N-pyrrole, furan, pyridine, preferably 2- or 3-pyridine,
pyrimidine, pyridazine, pyrazine, triazole, tetrazole, pyrazole,
imidazole, isothiazole, thiazole, thiadiazole, isoxazole, oxazole,
oxadiazole, thiophene preferably 2-thiophene, selenophene,
preferably 2-selenophene, thieno[3,2-b]thiophene, indole,
isoindole, benzofuran, benzothiophene, benzodithiophene, quinole,
2-methylquinole, isoquinole, quinoxaline, quinazoline,
benzotriazole, benzimidazole, benzothiazole, benzisothiazole,
benzisoxazole, benzoxadiazole, benzoxazole, benzothiadiazole, all
of which can be unsubstituted, mono- or polysubstituted with L as
defined above. Further examples of heteroaryl groups are those
selected from the following formulae
[0070] An alkyl or alkoxy radical, i.e. where the terminal CH.sub.2
group is replaced by --O--, can be straight-chain or branched. It
is preferably straight-chain, has 2, 3, 4, 5, 6, 7 or 8 carbon
atoms and accordingly is preferably ethyl, propyl, butyl, pentyl,
hexyl, heptyl, octyl, ethoxy, propoxy, butoxy, pentoxy, hexoxy,
heptoxy, or octoxy, furthermore methyl, nonyl, decyl, undecyl,
dodecyl, tridecyl, tetradecyl, pentadecyl, nonoxy, decoxy,
undecoxy, dodecoxy, tridecoxy or tetradecoxy, for example.
[0071] An alkenyl group, wherein one or more CH.sub.2 groups are
replaced by --CH.dbd.CH-- can be straight-chain or branched. It is
preferably straight-chain, has 2 to 10 C atoms and accordingly is
preferably vinyl, prop-1-, or prop-2-enyl, but-1-, 2- or
but-3-enyl, pent-1-, 2-, 3- or pent-4-enyl, hex-1-, 2-, 3-, 4- or
hex-5-enyl, hept-1-, 2-, 3-, 4-, 5- or hept-6-enyl, oct-1-, 2-, 3-,
4-, 5-, 6- or oct-7-enyl, non-1-, 2-, 3-, 4-, 5-, 6-, 7- or
non-8-enyl, dec-1-, 2-, 3-, 4-, 5-, 6-, 7-, 8- or dec-9-enyl.
[0072] Especially preferred alkenyl groups are
C.sub.2-C.sub.7-1E-alkenyl, C.sub.4-C.sub.7-3E-alkenyl,
C.sub.5-C.sub.7-4-alkenyl, C.sub.6-C.sub.7-5-alkenyl and
C.sub.7-6-alkenyl, in particular C.sub.2-C.sub.7-1E-alkenyl,
C.sub.4-C.sub.7-3E-alkenyl and C.sub.5-C.sub.7-4-alkenyl. Examples
for particularly preferred alkenyl groups are vinyl, 1E-propenyl,
1E-butenyl, 1E-pentenyl, 1E-hexenyl, 1E-heptenyl, 3-butenyl,
3E-pentenyl, 3E-hexenyl, 3E-heptenyl, 4-pentenyl, 4Z-hexenyl,
4E-hexenyl, 4Z-heptenyl, 5-hexenyl, 6-heptenyl and the like. Groups
having up to 5 C atoms are generally preferred.
[0073] An oxaalkyl group, i.e. where one CH.sub.2 group is replaced
by --O--, is preferably straight-chain 2-oxapropyl
(=methoxymethyl), 2-(=ethoxymethyl) or 3-oxabutyl
(=2-methoxyethyl), 2-, 3-, or 4-oxapentyl, 2-, 3-, 4-, or
5-oxahexyl, 2-, 3-, 4-, 5-, or 6-oxaheptyl, 2-, 3-, 4-, 5-, 6- or
7-oxaoctyl, 2-, 3-, 4-, 5-, 6-, 7- or 8-oxanonyl or 2-, 3-, 4-, 5-,
6-, 7-, 8- or 9-oxadecyl, for example. Oxaalkyl, i.e. where one
CH.sub.2 group is replaced by --O--, is preferably straight-chain
2-oxapropyl (=methoxymethyl), 2-(=ethoxymethyl) or 3-oxabutyl
(=2-methoxyethyl), 2-, 3-, or 4-oxapentyl, 2-, 3-, 4-, or
5-oxahexyl, 2-, 3-, 4-, 5-, or 6-oxaheptyl, 2-, 3-, 4-, 5-, 6- or
7-oxaoctyl, 2-, 3-, 4-, 5-, 6-, 7- or 8-oxanonyl or 2-, 3-, 4-, 5-,
6-, 7-, 8- or 9-oxadecyl, for example.
[0074] In an alkyl group wherein one CH.sub.2 group is replaced by
--O-- and one by --C(O)--, these radicals are preferably
neighboured. Accordingly these radicals together form a carbonyloxy
group --C(O)--O-- or an oxycarbonyl group --O--C(O)--. Preferably
this group is straight-chain and has 2 to 6 C atoms. It is
accordingly preferably acetyloxy, propionyloxy, butyryloxy,
pentanoyloxy, hexanoyloxy, acetyloxymethyl, propionyloxymethyl,
butyryloxymethyl, pentanoyloxymethyl, 2-acetyloxyethyl,
2-propionyloxy-ethyl, 2-butyryloxyethyl, 3-acetyloxypropyl,
3-propionyloxypropyl, 4-acetyloxybutyl, methoxycarbonyl,
ethoxycarbonyl, propoxycarbonyl, butoxycarbonyl, pentoxycarbonyl,
methoxycarbonylmethyl, ethoxy-carbonylmethyl,
propoxycarbonylmethyl, butoxycarbonylmethyl,
2-(methoxycarbonyl)ethyl, 2-(ethoxycarbonyl)ethyl,
2-(propoxy-carbonyl)ethyl, 3-(methoxycarbonyl)propyl,
3-(ethoxycarbonyl)propyl, 4-(methoxycarbonyl)-butyl.
[0075] An alkyl group wherein two or more CH.sub.2 groups are
replaced by --O-- and/or --C(O)O-- can be straight-chain or
branched. It is preferably straight-chain and has 3 to 12 C atoms.
Accordingly it is preferably bis-carboxy-methyl,
2,2-bis-carboxy-ethyl, 3,3-bis-carboxy-propyl,
4,4-bis-carboxy-butyl, 5,5-bis-carboxy-pentyl,
6,6-bis-carboxy-hexyl, 7,7-bis-carboxy-heptyl,
8,8-bis-carboxy-octyl, 9,9-bis-carboxy-nonyl,
10,10-bis-carboxy-decyl, bis-(methoxycarbonyl)-methyl,
2,2-bis-(methoxycarbonyl)-ethyl, 3,3-bis-(methoxycarbonyl)-propyl,
4,4-bis-(methoxycarbonyl)-butyl, 5,5-bis-(methoxycarbonyl)-pentyl,
6,6-bis-(methoxycarbonyl)-hexyl, 7,7-bis-(methoxycarbonyl)-heptyl,
8,8-bis-(methoxycarbonyl)-octyl, bis-(ethoxycarbonyl)-methyl,
2,2-bis-(ethoxycarbonyl)-ethyl, 3,3-bis-(ethoxycarbonyl)-propyl,
4,4-bis-(ethoxycarbonyl)-butyl, 5,5-bis-(ethoxycarbonyl)-hexyl.
[0076] A thioalkyl group, i.e where one CH.sub.2 group is replaced
by --S--, is preferably straight-chain thiomethyl (--SCH.sub.3),
1-thioethyl (--SCH.sub.2CH.sub.3), 1-thiopropyl
(=--SCH.sub.2CH.sub.2CH.sub.3), 1-(thiobutyl), 1-(thiopentyl),
1-(thiohexyl), 1-(thioheptyl), 1-(thiooctyl), 1-(thiononyl),
1-(thiodecyl), 1-(thioundecyl) or 1-(thiododecyl), wherein
preferably the CH.sub.2 group adjacent to the sp.sup.2 hybridised
vinyl carbon atom is replaced.
[0077] A fluoroalkyl group is preferably straight-chain
perfluoroalkyl C.sub.iF.sub.2i+1, wherein i is an integer from 1 to
15, in particular CF.sub.3, C.sub.2F.sub.5, C.sub.3F.sub.7,
C.sub.4F.sub.9, C.sub.5F.sub.11, C.sub.6F.sub.13, C.sub.7F.sub.15
or C.sub.8F.sub.17, very preferably C.sub.6F.sub.13.
[0078] The above-mentioned alkyl, alkoxy, alkenyl, oxaalkyl,
thioalkyl, carbonyl and carbonyloxy groups can be achiral or chiral
groups. Particularly preferred chiral groups are 2-butyl
(=1-methylpropyl), 2-methylbutyl, 2-methylpentyl, 3-methylpentyl,
2-ethylhexyl, 2-propylpentyl, in particular 2-methylbutyl,
2-methylbutoxy, 2-methylpentoxy, 3-methylpentoxy, 2-ethyl-hexoxy,
1-methylhexoxy, 2-octyloxy, 2-oxa-3-methylbutyl,
3-oxa-4-methyl-pentyl, 4-methylhexyl, 2-hexyl, 2-octyl, 2-nonyl,
2-decyl, 2-dodecyl, 6-meth-oxyoctoxy, 6-methyloctoxy,
6-methyloctanoyloxy, 5-methylheptyloxy-carbonyl,
2-methylbutyryloxy, 3-methylvaleroyloxy, 4-methylhexanoyloxy,
2-chloropropionyloxy, 2-chloro-3-methylbutyryloxy,
2-chloro-4-methyl-valeryl-oxy, 2-chloro-3-methylvaleryloxy,
2-methyl-3-oxapentyl, 2-methyl-3-oxahexyl, 1-methoxypropyl-2-oxy,
1-ethoxypropyl-2-oxy, 1-propoxypropyl-2-oxy, 1-butoxypropyl-2-oxy,
2-fluorooctyloxy, 2-fluorodecyloxy, 1,1,1-trifluoro-2-octyloxy,
1,1,1-trifluoro-2-octyl, 2-fluoromethyloctyloxy for example. Very
preferred are 2-hexyl, 2-octyl, 2-octyloxy,
1,1,1-trifluoro-2-hexyl, 1,1,1-trifluoro-2-octyl and
1,1,1-trifluoro-2-octyloxy.
[0079] Preferred achiral branched groups are isopropyl, isobutyl
(=methylpropyl), isopentyl (=3-methylbutyl), tert. butyl,
isopropoxy, 2-methyl-propoxy and 3-methylbutoxy.
[0080] In another preferred embodiment of the present invention,
R.sup.1 and R.sup.2 are independently of each other selected from
primary, secondary or tertiary alkyl or alkoxy with 1 to 30 C
atoms, wherein one or more H atoms are optionally replaced by F, or
aryl, aryloxy, heteroaryl or heteroaryloxy that is optionally
alkylated or alkoxylated and has 4 to 30 ring atoms. Very preferred
groups of this type are selected from the group consisting of the
following formulae
##STR00003##
wherein "ALK" denotes optionally fluorinated, preferably linear,
alkyl or alkoxy with 1 to 20, preferably 1 to 12 C-atoms, in case
of tertiary groups very preferably 1 to 9 C atoms, and the dashed
line denotes the link to the ring to which these groups are
attached. Especially preferred among these groups are those wherein
all ALK subgroups are identical.
[0081] --CY.sup.1.dbd.CY.sup.2-- is preferably --CH.dbd.CH--,
--CF.dbd.CF-- or --CH.dbd.C(CN)--.
[0082] Halogen is F, Cl, Br or I, preferably F, Cl or Br.
[0083] --CO--, --C(.dbd.O)-- and --C(O)-- denote a carbonyl group,
i.e.
##STR00004##
[0084] The compounds may also be substituted with a polymerisable
or crosslinkable reactive group, which is optionally protected
during the process of forming the polymer. Particularly preferred
compounds of this type are those compounds of formula I wherein
R.sup.1 and/or R.sup.2 denote P-Sp. These compounds are
particularly useful as semiconductors or charge transport
materials, as they can be crosslinked via the groups P, for example
by polymerisation in situ, during or after processing the polymer
into a thin film for a semiconductor component, to yield
crosslinked polymer films with high charge carrier mobility and
high thermal, mechanical and chemical stability.
[0085] Preferably the polymerisable or crosslinkable group P is
selected from CH.sub.2.dbd.CW.sup.1--C(O)--O--,
CH.sub.2.dbd.CW.sup.1--C(O)--,
##STR00005##
CH.sub.2.dbd.CW.sup.2--(O).sub.k1--,
CW.sup.1.dbd.CH--C(O)--(O).sub.k3--, CW.sup.1.dbd.CH--C(O)--NH--,
CH.sub.2.dbd.CW.sup.1--C(O)--NH--, CH.sub.3--CH.dbd.CH--O--,
(CH.sub.2.dbd.CH).sub.2CH--OC(O)--,
(CH.sub.2.dbd.CH--CH.sub.2).sub.2CH--O--C(O)--,
(CH.sub.2.dbd.CH).sub.2CH--O--,
(CH.sub.2.dbd.CH--CH.sub.2).sub.2N--,
(CH.sub.2.dbd.CH--CH.sub.2).sub.2N--C(O)--, HO--CW.sup.2W.sup.3--,
HS--CW.sup.2W.sup.3--, HW.sup.2N--, HO--CW.sup.2W.sup.3--NH--,
CH.sub.2.dbd.CH--(C(O)--O).sub.k1-Phe-(O).sub.k2--,
CH.sub.2.dbd.CH--(C(O)).sub.k1-Phe-(O).sub.k2--, Phe-CH.dbd.CH--,
HOOC--, OCN--, and W.sup.4W.sup.5W.sup.6Si--, with W.sup.1 being H,
F, Cl, CN, CF.sub.3, phenyl or alkyl with 1 to 5 C-atoms, in
particular H, C.sub.1 or CH.sub.3, W.sup.2 and W.sup.3 being
independently of each other H or alkyl with 1 to 5 C-atoms, in
particular H, methyl, ethyl or n-propyl, W.sup.4, W.sup.5 and
W.sup.6 being independently of each other Cl, oxaalkyl or
oxacarbonylalkyl with 1 to 5 C-atoms, W.sup.7 and W.sup.8 being
independently of each other H, Cl or alkyl with 1 to 5 C-atoms, Phe
being 1,4-phenylene that is optionally substituted by one or more
groups L as defined above, k.sub.1, k.sub.2 and k.sub.3 being
independently of each other 0 or 1, k.sub.3 preferably being 1, and
k.sub.4 being an integer from 1 to 10.
[0086] Alternatively P is a protected derivative of these groups
which is non-reactive under the conditions described for the
process according to the present invention. Suitable protective
groups are known to the ordinary expert and described in the
literature, for example in Green, "Protective Groups in Organic
Synthesis", John Wiley and Sons, New York (1981), like for example
acetals or ketals.
[0087] Especially preferred groups P are
CH.sub.2.dbd.CH--C(O)--O--, CH.sub.2.dbd.C(CH.sub.3)--C(O)--O--,
CH.sub.2.dbd.CF--C(O)--O--, CH.sub.2.dbd.CH--O--,
(CH.sub.2.dbd.CH).sub.2CH--O--C(O)--,
(CH.sub.2.dbd.CH).sub.2CH--O--,
##STR00006##
or protected derivatives thereof. Further preferred groups P are
selected from the group consisting of vinyloxy, acrylate,
methacrylate, fluoroacrylate, chloracrylate, oxetan and epoxy
groups, very preferably from an acrylate or methacrylate group.
[0088] Polymerisation of group P can be carried out according to
methods that are known to the ordinary expert and described in the
literature, for example in D. J. Broer; G. Challa; G. N. Mol,
Macromol. Chem, 1991, 192, 59.
[0089] The term "spacer group" is known in prior art and suitable
spacer groups Sp are known to the ordinary expert (see e.g. Pure
Appl. Chem. 73(5), 888 (2001). The spacer group Sp is preferably of
formula Sp'-X', such that P-Sp- is P-Sp'-X'--, wherein [0090] Sp'
is alkylene with up to 30 C atoms which is unsubstituted or mono-
or polysubstituted by F, Cl, Br, I or CN, it being also possible
for one or more non-adjacent CH.sub.2 groups to be replaced, in
each case independently from one another, by --O --, --S--, --NH--,
--NR.sup.0--, --SiR.sup.0R.sup.00--, --C(O)--, --C(O)O--,
--OC(O)--, --OC(O)--O--, --S--C(O)--, --C(O)--S--, --CH.dbd.CH-- or
--C.ident.C-- in such a manner that O and/or S atoms are not linked
directly to one another, [0091] X' is --O--, --S--, --C(O)--,
--C(O)O--, --OC(O)--, --O--C(O)O--, --C(O)--NR.sup.0--,
--NR.sup.0--C(O)--, --NR.sup.0--C(O)--NR.sup.00--, --OCH.sub.2--,
--CH.sub.2O--, --SCH.sub.2--, --CH.sub.2S--, --CF.sub.2O--,
--OCF.sub.2--, --CF.sub.2S--, --SCF.sub.2--, --CF.sub.2CH.sub.2--,
--CH.sub.2CF.sub.2--, --CF.sub.2CF.sub.2--, --CH.dbd.N--,
--N.dbd.CH--, --N.dbd.N--, --CH.dbd.CR.sup.0--,
--CY.sup.1.dbd.CY.sup.2--, --C.ident.C--, --CH.dbd.CH--C(O)O--,
--OC(O)--CH.dbd.CH-- or a single bond,
[0092] R.sup.0 and R.sup.00 are independently of each other H or
alkyl with 1 to 12 C-atoms, and [0093] Y.sup.1 and Y.sup.2 are
independently of each other H, F, Cl or CN. [0094] X' is preferably
--O--, --S--, --OCH.sub.2--, --CH.sub.2O--, --SCH.sub.2--,
--CH.sub.2S--, --CF.sub.2O--, --OF.sub.2--, --CF.sub.2S--,
--SCF.sub.2--, --CH.sub.2CH.sub.2--, --CF.sub.2CH.sub.2--,
--CH.sub.2CF.sub.2--, --CF.sub.2CF.sub.2--, --CH.dbd.N--,
--N.dbd.CH--, --N.dbd.N--, --CH.dbd.CR.sup.0--,
--CY.sup.1.dbd.CY.sup.2--, --C.ident.C-- or a single bond, in
particular --O--, --S--, --C.ident.C--, --CY.sup.1.dbd.CY.sup.2--
or a single bond. In another preferred embodiment X' is a group
that is able to form a conjugated system, such as --C.ident.C-- or
--CY.sup.1.dbd.CY.sup.2--, or a single bond.
[0095] Typical groups Sp' are, for example, --(CH.sub.2).sub.p--,
--(CH.sub.2CH.sub.2O).sub.q--CH.sub.2CH.sub.2--,
--CH.sub.2CH.sub.2--S--CH.sub.2CH.sub.2-- or
--CH.sub.2CH.sub.2--NH--CH.sub.2CH.sub.2-- or
--(SiR.sup.0R.sup.00--O).sub.p--, with p being an integer from 2 to
12, q being an integer from 1 to 3 and R.sup.0 and R.sup.00 having
the meanings given above.
[0096] Preferred groups Sp' are ethylene, propylene, butylene,
pentylene, hexylene, heptylene, octylene, nonylene, decylene,
undecylene, dodecylene, octadecylene, ethyleneoxyethylene,
methyleneoxybutylene, ethylene-thioethylene,
ethylene-N-methyl-iminoethylene, 1-methylalkylene, ethenylene,
propenylene and butenylene for example.
[0097] Another aspect of the invention relates to compounds of
formula II
R.sup.3--(Ar.sup.7).sub.g--U--(Ar.sup.8).sub.h--R.sup.4 II
[0098] wherein U is as defined in formula I, [0099] Ar.sup.7,
Ar.sup.8 independently of each other, and on each occurrence
identically or differently, have one of the meanings of Ar.sup.1 as
given in formula I, or one of the preferred meanings as described
above and below, [0100] g, h are independently of each other 0, 1,
2 or 3, and [0101] R.sup.3, R.sup.4 are independently of each other
a leaving group, preferably selected from the group consisting of
F, Cl, Br, I, H, NR'H, --CH.sub.2Cl, --CHO, --CH.dbd.CH.sub.2,
--SiR'R''R''', --SnR'R''R''', --BR'R'', --B(OR')(OR''),
--B(OH).sub.2, O-tosylate, O-triflate, O-mesylate, O-nonaflate,
--SiMe.sub.2F, --SiMeF.sub.2, --O--SO.sub.2--R',
--CR'.dbd.CR''R''', --C.ident.CH, --C.ident.CSiR'R''R''',
--ZnX.sup.0 and P-Sp-, wherein X.sup.0, P and Sp are as defined
above, R', R'' and R''' have independently of each other one of the
meanings of R.sup.0 as given in formula I or one of the preferred
meanings as described above and below, and preferably denote alkyl
with 1 to 20 C atoms or aryl with 4 to 20 C atoms, and two of R',
R'' and R''' may also form a ring together with the hetero atom to
which they are attached, and "Me" denotes methyl,
[0102] wherein, if X is S and Y is O, then at least one of g and h
is not 0, and if X is O and Y is O and both g and h are not 0, then
at least one of Ar.sup.7 and Ar.sup.8 is different from phenylene,
pyridine, naphthalene and indole which are optionally substituted
by R.sup.1 as defined in claim 1.
[0103] Especially preferred are compounds of formula II, wherein
g+h>0.
[0104] The compounds of formula II are useful as educts for the
preparation of compounds of formula I.
[0105] In the compounds of formula I and II, the group U preferably
denotes thieno[3,2-b]thiophene-2,5-dione-3,6-diyl or
furo[3,2-b]furan-2,5-dione-3,6-diyl, wherein the ketone
functionality at the 2- and 5-positions is optionally a thioketone
functionality. Accordingly U in formula I and II is preferably
selected from the following formulae Ia-Id:
##STR00007##
[0106] Especially preferred are groups U of formula Ia and Ib.
[0107] In the compounds of formula I and II, Ar.sup.1-6 and
Ar.sup.7-8 are selected such that they form a fully conjugated core
group together with the group U. In the compounds of formula I the
groups R.sup.1 and R.sup.2 can be selected to improve the
properties of the compound, e.g. by increasing the solubility. In
the compounds of formula II reactive sites are introduced by the
groups R.sup.3 and R.sup.4 for use in aryl-aryl coupling
reactions.
[0108] Very preferred are compounds of formula I, wherein R.sup.1
and R.sup.2 independently of each other denote H or straight-chain,
branched or cyclic alkyl with 1 to 35 C atoms, in which one or more
non-adjacent C atoms are optionally replaced by --O--, --S--,
--C(O)--, --C(O)--O--, --O--C(O)--, --O--C(O)--O--,
--CR.sup.0.dbd.CR.sup.00-- or --C.ident.C-- and in which one or
more H atoms are optionally replaced by F, Cl, Br, I or CN, or
denote aryl, heteroaryl, aryloxy, heteroaryloxy, arylcarbonyl,
heteroarylcarbonyl, arylcarbonyloxy, heteroarylcarbonyloxy,
aryloxycarbonyl and heteroaryloxycarbonyl, each of which has 4 to
30 ring atoms and is optionally substituted by one or more
non-aromatic groups L,
[0109] wherein L is selected from halogen, --CN, --NC, --NCO,
--NCS, --OCN, --SCN, --C(.dbd.O)NR.sup.0R.sup.00,
--C(.dbd.O)X.sup.0, --C(.dbd.O)R.sup.0, --C(O)OR.sup.0,
--O--C(O)R.sup.0, --NH.sub.2, --NR.sup.0R.sup.00, --SH, --SR.sup.0,
--SO.sub.3H, --SO.sub.2R.sup.0, --OH, --NO.sub.2, --CF.sub.3,
--SF.sub.5, P-Sp-, or alkyl, alkoxy, thiaalkyl, alkylcarbonyl,
alkoxycarbonyl or alkoxycarbonyloxy with 1 to 20 C atoms that is
optionally fluorinated, and R.sup.0, R.sup.00, X.sup.0, P and Sp
having the meanings given in formula I.
[0110] Preferably Ar.sup.1-6 in formula I and Ar.sup.7 and Ar.sup.8
in formula II independently of each other, and on each occurrence
identically or differently, denote aryl or heteroaryl, which
preferably has 5 to 30 ring atoms and is unsubstituted or
substituted, preferably by one or more groups R.sup.1 as defined
above, or denote U.
[0111] Further preferred are compounds of formula I wherein one or
more of Ar.sup.1, Ar.sup.2, Ar.sup.3 and/or one or more of
Ar.sup.4, Ar.sup.5 and Ar.sup.6 are selected from aryl or
heteroaryl groups having electron donor properties.
[0112] Further preferred are compounds of formula II wherein one or
more of Ar.sup.7 and/or one or more of Ar.sup.8 are selected from
aryl or heteroaryl groups having electron donor properties.
[0113] Further preferred are compounds of formula I wherein one or
more of Ar.sup.1, Ar.sup.2, Ar.sup.3 and/or one or more of
Ar.sup.4, Ar.sup.5 and Ar.sup.6 denote aryl or heteroaryl,
preferably having electron donor properties, selected from the
group consisting of formulae D1-D110 listed below.
[0114] Further preferred are compounds of formula II wherein or one
or more of Ar.sup.7 and/or one or more of Ar.sup.8 denote aryl or
heteroaryl, preferably having electron donor properties, selected
from the group consisting of the following formulae
##STR00008## ##STR00009## ##STR00010## ##STR00011## ##STR00012##
##STR00013## ##STR00014## ##STR00015## ##STR00016## ##STR00017##
##STR00018## ##STR00019## ##STR00020## ##STR00021##
wherein one of X.sup.11 and X.sup.12 is S and the other is Se, and
R.sup.11, R.sup.12, R.sup.13, R.sup.14, R.sup.15, R.sup.16,
R.sup.17 and R.sup.18 independently of each other denote H or have
one of the meanings of R.sup.1 as defined above and below.
[0115] Further preferred are compounds of formula I wherein one or
more of Ar.sup.1, Ar.sup.2, Ar.sup.3 and/or one or more of
Ar.sup.4, Ar.sup.5 and Ar.sup.6 are selected from aryl or
heteroaryl groups having electron acceptor properties.
[0116] Further preferred are compounds of formula II wherein one or
more of Ar.sup.7 and/or one or more of Ar.sup.8 are selected from
aryl or heteroaryl groups having electron acceptor properties.
[0117] Further preferred are compounds of formula I wherein one or
more of Ar.sup.1, Ar.sup.2, Ar.sup.3 and/or one or more of
Ar.sup.4, Ar.sup.5 and Ar.sup.6, and compounds of formula II
wherein or one or more of Ar.sup.7 and/or one or more of Ar.sup.8,
denote aryl or heteroaryl, preferably having electron acceptor
properties, selected from the group consisting of the following
formulae
##STR00022## ##STR00023## ##STR00024## ##STR00025## ##STR00026##
##STR00027## ##STR00028## ##STR00029## ##STR00030##
wherein one of X.sup.11 and X.sup.12 is S and the other is Se, and
R.sup.11, R.sup.12, R.sup.13, R.sup.14 and R.sup.15 independently
of each other denote H or have one of the meanings of R.sup.1 as
defined above and below.
[0118] Further preferred are compounds of formula I wherein one or
more of Ar.sup.1, Ar.sup.2, Ar.sup.3 and/or one or more of
Ar.sup.4, Ar.sup.5 and Ar.sup.6 have one of the meanings of U, and
are preferably selected from formulae Ia, Ib, Ic and Id.
[0119] Further preferred are compounds of formula II wherein one or
more of Ar.sup.7 and/or one or more of Ar.sup.8 have one of the
meanings of U, and are preferably selected from formulae Ia, Ib, Ic
and Id.
[0120] In compounds of formula I and II wherein one or more of
Ar.sup.1-6 and Ar.sup.7,8 denote U, the U groups that are present
in these compounds (including the central group U in formula I and
II, and all of Ar.sup.1-8 that denote U) are preferably not linked
directly to each other.
[0121] In compounds of formula I and II wherein one or more of
Ar.sup.1-8 and Ar.sup.7,8 denote U, the U groups that are present
in these compounds (including the central group U in formula I and
II, and all of Ar.sup.1-8 that denote U) may have the same
structure (i.e. they have the same meanings of X and Y) or may have
different structure (i.e. they have the different meanings of X and
Y). Preferably all groups U present in these compounds have the
same structure.
[0122] Further preferred are compounds of formula I wherein one or
more, preferably all, of Ar.sup.1-8 are selected from the group
consisting of formulae Ia, Ib, Ic, Id, D1, D5, D6, D8, D13, D14,
D15, D16, D19, D28, D68, A3 and A4, most preferably from formulae
Ia, Ib, Ic, Id, Id, D1, D5, D6, D8, and D19.
[0123] Further preferred are compounds of formula II wherein one or
more, preferably all, of Ar.sup.7,8 are selected from the group
consisting of formulae Ia, Ib, Ic, Id, D1, D5, D6, D8, D13, D14,
D15, D16, D19, D28, D68, A3 and A4, most preferably from formulae
Ia, Ib, Ic, Id, Id, D1, D5, D6, D8, and D19.
[0124] Further preferred compounds of formula I are selected from
the following subformulae
R.sup.1--(Ar.sup.1).sub.a--(Ar.sup.2).sub.b--(Ar.sup.3).sub.c--U--(Ar.su-
p.4).sub.d--(Ar.sup.5).sub.e--R.sup.2 I1
R.sup.1--(Ar.sup.1).sub.a--(Ar.sup.3).sub.c--U--(Ar.sup.4).sub.d--(Ar.su-
p.5).sub.e--R.sup.2 I2
R.sup.1--(Ar.sup.1).sub.a--(Ar.sup.3).sub.c--U--(Ar.sup.4).sub.d--R.sup.-
2 I3
R.sup.1--(Ar.sup.3).sub.c--U--(Ar.sup.4).sub.d--R.sup.2 I4
R.sup.1--(Ar.sup.1).sub.a--U--(Ar.sup.3).sub.c--U--(Ar.sup.4).sub.d--(Ar-
.sup.5).sub.e--R.sup.2 I5
R.sup.1--(Ar.sup.1).sub.a--U--(Ar.sup.3).sub.c--U--(Ar.sup.4).sub.d--R.s-
up.2 I6
R.sup.1--(Ar.sup.1).sub.a--(Ar.sup.2).sub.b--U--(Ar.sup.4).sub.d--U--(Ar-
.sup.5).sub.e--(Ar.sup.6).sub.f--R.sup.2 I7
wherein R.sup.1, R.sup.2, Ar.sup.1, Ar.sup.2, Ar.sup.3, Ar.sup.4,
Ar.sup.5, Ar.sup.6, a, b, c, d, e and f have the meanings given in
formula I or one of the preferred meanings given above and below,
and preferably a, b, c, d, e and f denote 1 or 2.
[0125] Especially preferred are compounds of formulae I1-I7 wherein
U is selected of formulae Ia, Ib, Ic, Id and Ar.sup.1-6 are
selected of formulae, D1, D5, D6, D8, D13, D14, D15, D16, D19, D28,
D68, A3 and A4, most preferably from formulae D1, D5, D6, D8 and
D19.
[0126] Further preferred are compounds of formula I and II and
their subformulae that are selected from the following list of
preferred embodiments: [0127] a=1 or 2, c=1 or 2, d=1 or 2, f=1 or
2, and b=e=0, [0128] a=b=0 and e=f=0, and c and d are 1 or 2,
[0129] g is 1 or 2 and h is 1 or 2, [0130] g is 0 and h is 0,
[0131] one or more of Ar.sup.1-6 denote U, [0132] one or more of
Ar.sup.7,8 denote U, [0133] one or more, preferably all, of
Ar.sup.1-6 are selected of formulae Ia, Ib, Ic, Id, D1, D5, D6, D8,
D13, D14, D15, D16, D19, D28, D68, A3, A4, [0134] one or more,
preferably all, of Ar.sup.7,8 are selected of formula Ia, Ib, Ic,
Id, D1, D5, D6, D8, D13, D14, D15, D16, D19, D28, D68, A3, A4,
[0135] R.sup.1 and/or R.sup.2 are selected from the group
consisting of primary alkyl or alkoxy with 1 to 30 C atoms,
secondary alkyl or alkoxy with 3 to 30 C atoms, and tertiary alkyl
or alkoxy with 4 to 30 C atoms, wherein in all these groups one or
more H atoms are optionally replaced by F, [0136] R.sup.1 and/or
R.sup.2 are selected from the group consisting of aryl, heteroaryl,
aryloxy, heteroaryloxy, each of which is optionally alkylated or
alkoxylated and has 4 to 30 ring atoms, [0137] R.sup.1 and/or
R.sup.2 are selected from the group consisting of alkyl, alkoxy,
alkylcarbonyl, alkoxycarbonyl and alkylcarbonyloxy, all of which
are straight-chain or branched, are optionally fluorinated, and
have from 1 to 30 C atoms, and aryl, aryloxy, heteroaryl and
heteroaryloxy, all of which are optionally alkylated or alkoxylated
and have 4 to 30 ring atoms, [0138] R.sup.1 and/or R.sup.2 denote
F, Cl, Br, I, CN, R.sup.5, --C(O)--R.sup.5, --C(O)--O--R.sup.5, or
--O--C(O)--R.sup.5, wherein R.sup.5 is straight-chain, branched or
cyclic alkyl with 1 to 30 C atoms, in which one or more
non-adjacent C atoms are optionally replaced by --O--, --S--,
--C(O)--, --C(O)--O--, --O--C(O)--, --O--C(O)--O--,
--CR.sup.0.dbd.CR.sup.00-- or --C.ident.C-- and in which one or
more H atoms are optionally replaced by F, Cl, Br, I or CN, or
R.sup.1 and/or R.sup.2 denote independently of each other aryl,
aryloxy, heteroaryl or heteroaryloxy having 4 to 30 ring atoms
which is unsubstituted or which is substituted by one or more
halogen atoms or by one or more groups R.sup.5, --C(O)--R.sup.5,
--C(O)--O--R.sup.5, or --O--C(O)--R.sup.5 wherein R.sup.5 is as
defined above, [0139] R.sup.5 is primary alkyl with 1 to 30 C
atoms, very preferably with 1 to 15 C atoms, secondary alkyl with 3
to 30 C atoms, or tertiary alkyl with 4 to 30 C atoms, wherein in
all these groups one or more H atoms are optionally replaced by F,
[0140] R.sup.1 and/or R.sup.2 denote H, [0141] R.sup.3 and/or
R.sup.4 are selected from the group consisting of Cl, Br, I,
--SnR'R''R''', --B(OR')(OR''), --B(OH).sub.2, O-tosylate,
O-triflate, O-mesylate, O-nonaflate, --SiMe.sub.2F, --SiMeF.sub.2,
--O--SO.sub.2--R', --CR'.dbd.CR''R''', --C.ident.CH,
--C.ident.CSiR'R''R''', --ZnX.sup.0, wherein R', R'' and R''' have
independently of each other one of the meanings of R.sup.0 as given
in formula I or one of the preferred meanings as described above
and below, and preferably denote alkyl with 1 to 20 C atoms or aryl
with 4 to 20 C atoms, and two of R', R'' and R''' may also form a
ring together with the hetero atom to which they are attached,
X.sup.0 is halogen, preferably Br, Cl or I, and "Me" denotes
methyl, [0142] R.sup.0 and R.sup.00 are selected from H or
C.sub.1-C.sub.10-alkyl.
[0143] The compounds of formula I and II can be synthesized
according to or in analogy to methods that are known to the skilled
person and are described in the literature. Other methods of
preparation can be taken from the examples. Preferred and suitable
synthesis methods are further described in the reaction schemes
shown below, wherein R.sup.1,2 and Ar.sup.1-Ar.sup.5 are as defined
in formula I.
[0144] The synthesis scheme for the
thieno[3,2-b]thiophene-2,5-dione based organic semiconductors is
shown in Schemes 1 and 2. Scheme 1 illustrates the synthesis of
symmetrical thieno[3,2-b]thiophene-2,5-dione based organic
semiconductors, whilst Scheme 2 illustrates the synthesis of
non-symmetrical thieno[3,2-b]thiophene-2,5-dione based organic
semiconductors.
[0145] The preparation of the
3,6-dibromo-thieno[3,2-b]thiophene-2,5-dione and
3,6-diiodo-thieno[3,2-b]thiophene-2,5-dione has been described in
Guenther, E.; Huenig, S.; Chemische Berichte 1992, 125,
1235-1241.
##STR00031##
##STR00032##
[0146] The synthesis scheme for the furo[3,2-b]furan-2,5-dione
based organic semiconductors is shown in Schemes 3 and 4. Scheme 3
illustrates the synthesis of symmetrical furo[3,2-b]furan-2,5-dione
based organic semiconductors, whilst Scheme 4 illustrates the
synthesis of non-symmetrical furo[3,2-b]furan-2,5-dione based
organic semiconductors
[0147] The preparation of 3,6-dibromo-furo[3,2-b]furan-2,5-dione
has been described in Stachel, H.-D. et al.; Liebigs Annalen der
Chemie 1994, 961-964. Alternatively, the generic preparation of
3,6-diaryl-furo[3,2-b]furan-2,5-dione has been described, for
example, in U.S. Pat. No. 3,780,064.
##STR00033##
##STR00034##
[0148] Compounds containing two or more
thieno[3,2-b]thiophene-2,5-dione groups can be prepared in analogy
to Schemes 1 and 2, wherein one or more of Ar.sup.1-6 denote
thieno[3,2-b]thiophene-2,5-dione. For example, symmetrical
compounds containing two thieno[3,2-b]thiophene-2,5-dione units can
be obtained as shown in Scheme 5.
##STR00035##
[0149] Likewise, compounds containing two or more
furo[3,2-b]furan-2,5-dione groups can be prepared in analogy to
Schemes 3 and 4, wherein one or more of Ar.sup.1-6 denote
furo[3,2-b]furan-2,5-dione. For example, symmetrical compounds
containing two furo[3,2-b]furan-2,5-dione units can be obtained as
shown in Scheme 6.
##STR00036##
[0150] The novel methods of preparing compounds as described above
and below and the intermediates used therein are further aspects of
the present invention.
[0151] Very preferred is a process of preparing a compound of
formula I, comprising the step of reacting a compound of formula II
with one or more compounds selected of formula C1 and C2 in an
aryl-aryl coupling reaction
R.sup.3--(Ar.sup.7).sub.g--U--(Ar.sup.8).sub.h--R.sup.4 II
R.sup.1--(Ar.sup.1).sub.a--(Ar.sup.2).sub.b--(Ar.sup.3).sub.c--R.sup.3
C1
R.sup.4--(Ar.sup.4).sub.d--(Ar.sup.5).sub.e--(Ar.sup.6).sub.f--R.sup.2
C2
wherein R.sup.3 and R.sup.4 are selected from Cl, Br, I, H, NR'H,
--SnR'R''R''', --B(OR')(OR''), --B(OH).sub.2, O-tosylate,
O-triflate, O-mesylate, O-nonaflate, --SiMe.sub.2F, --SiMeF.sub.2,
--O--SO.sub.2--R', --CR'.dbd.CR''R''', --C.ident.CH,
--C.ident.CSiR'R''R''', --ZnX.sup.0, and R', R'', R''', X.sup.0,
R.sup.1,2, Ar.sup.1-6, a, b, c, d, e, f, g and h are as defined in
formula I and II above.
[0152] Preferred aryl-aryl coupling methods used in the processes
described above and below are Yamamoto coupling, Kumada coupling,
Negishi coupling, Suzuki coupling, Stille coupling, Sonogashira
coupling, Heck coupling, C--H activation coupling, Ullmann coupling
or Buchwald coupling. Especially preferred are Suzuki coupling,
Negishi coupling, Stille coupling and Yamamoto coupling. Suzuki
coupling is described for example in WO 00/53656 A1. Negishi
coupling is described for example in J. Chem. Soc., Chem. Commun.,
1977, 683-684. Yamamoto coupling is described in for example in T.
Yamamoto et al., Prog. Polym. Sci., 1993, 17, 1153-1205, or WO
2004/022626 A1. For example, when using Yamamoto coupling,
compounds of formula II having two reactive halide groups are
preferably used. When using Suzuki coupling, compounds of formula
II having two reactive boronic acid or boronic acid ester groups or
two reactive halide groups are preferably used. When using Stille
coupling, compounds of formula II having two reactive stannane
groups or two reactive halide groups are preferably used. When
using Negishi coupling, compounds of formula II having two reactive
organozinc groups or two reactive halide groups are preferably
used.
[0153] Preferred catalysts, especially for Suzuki, Negishi or
Stille coupling, are selected from Pd(0) complexes or Pd(II) salts.
Preferred Pd(0) complexes are those bearing at least one phosphine
ligand such as Pd(Ph.sub.3P).sub.4. Another preferred phosphine
ligand is tris(ortho-tolyl)phosphine, i.e. Pd(o-Tol.sub.3P).sub.4.
Preferred Pd(II) salts include palladium acetate, i.e.
Pd(OAc).sub.2. Alternatively the Pd(0) complex can be prepared by
mixing a Pd(0) dibenzylideneacetone complex, for example
tris(dibenzyl-ideneacetone)dipalladium(0),
bis(dibenzylideneacetone)palladium(0), or Pd(II) salts e.g.
palladium acetate, with a phosphine ligand, for example
triphenylphosphine, tris(ortho-tolyl)phosphine or
tri(tert-butyl)phosphine. Suzuki coupling is performed in the
presence of a base, for example sodium carbonate, potassium
carbonate, lithium hydroxide, potassium phosphate or an organic
base such as tetraethylammonium carbonate or tetraethylammonium
hydroxide. Yamamoto coupling employs a Ni(0) complex, for example
bis(1,5-cyclooctadienyl) nickel(0).
[0154] The invention further relates to a formulation comprising
one or more compounds of formula I and one or more solvents,
preferably selected from organic solvents.
[0155] Preferred solvents are aliphatic hydrocarbons, chlorinated
hydrocarbons, aromatic hydrocarbons, ketones, ethers and mixtures
thereof. Additional solvents which can be used include
1,2,4-trimethylbenzene, 1,2,3,4-tetramethyl benzene, pentylbenzene,
mesitylene, cumene, cymene, cyclohexylbenzene, diethylbenzene,
tetralin, decalin, 2,6-lutidine, 2-fluoro-m-xylene,
3-fluoro-o-xylene, 2-chlorobenzotrifluoride, N,N-dimethylformamide,
2-chloro-6-fluorotoluene, 2-fluoroanisole, anisole,
2,3-dimethylpyrazine, 4-fluoroanisole, 3-fluoroanisole,
3-trifluoro-methylanisole, 2-methylanisole, phenetol,
4-methylansiole, 3-methylanisole, 4-fluoro-3-methylanisole,
2-fluorobenzonitrile, 4-fluoroveratrol, 2,6-dimethylanisole,
3-fluorobenzonitrile, 2,5-dimethylanisole, 2,4-dimethylanisole,
benzonitrile, 3,5-dimethylanisole, N,N-dimethylaniline, ethyl
benzoate, 1-fluoro-3,5-dimethoxybenzene, 1-methylnaphthalene,
N-methylpyrrolidinone, 3-fluorobenzotrifluoride, benzotrifluoride,
dioxane, trifluoromethoxybenzene, 4-fluorobenzotrifluoride,
3-fluoropyridine, toluene, 2-fluorotoluene,
2-fluorobenzotrifluoride, 3-fluorotoluene, 4-isopropylbiphenyl,
phenyl ether, pyridine, 4-fluorotoluene, 2,5-difluorotoluene,
1-chloro-2,4-difluorobenzene, 2-fluoropyridine,
3-chlorofluorobenzene, 3-chlorofluorobenzene,
1-chloro-2,5-difluorobenzene, 4-chlorofluorobenzene, chlorobenzene,
o-dichlorobenzene, 2-chlorofluorobenzene, p-xylene, m-xylene,
o-xylene or mixture of o-, m-, and p-isomers. Solvents with
relatively low polarity are generally preferred. For inkjet
printing solvents with high boiling temperatures and solvent
mixtures are preferred. For spin coating alkylated benzenes like
xylene and toluene are preferred.
[0156] The invention further relates to an organic semiconducting
formulation comprising one or more compounds of formula I, one or
more organic binders, or precursors thereof, preferably having a
permittivity .di-elect cons. at 1,000 Hz of 3.3 or less, and
optionally one or more solvents.
[0157] Combining specified soluble compounds of formula I,
especially compounds of the preferred formulae as described above
and below, with an organic binder resin (hereinafter also referred
to as "the binder") results in little or no reduction in charge
mobility of the compounds of formula I, even an increase in some
instances. For instance, the compounds of formula I may be
dissolved in a binder resin (for example
poly(.alpha.-methylstyrene) and deposited (for example by spin
coating), to form an organic semiconducting layer yielding a high
charge mobility. Moreover, a semiconducting layer formed thereby
exhibits excellent film forming characteristics and is particularly
stable.
[0158] If an organic semiconducting layer formulation of high
mobility is obtained by combining a compound of formula I with a
binder, the resulting formulation leads to several advantages. For
example, since the compounds of formula I are soluble they may be
deposited in a liquid form, for example from solution. With the
additional use of the binder the formulation can be coated onto a
large area in a highly uniform manner. Furthermore, when a binder
is used in the formulation it is possible to control the properties
of the formulation to adjust to printing processes, for example
viscosity, solid content, surface tension. Whilst not wishing to be
bound by any particular theory it is also anticipated that the use
of a binder in the formulation fills in volume between crystalline
grains otherwise being void, making the organic semiconducting
layer less sensitive to air and moisture. For example, layers
formed according to the process of the present invention show very
good stability in OFET devices in air.
[0159] The invention also provides an organic semiconducting layer
which comprises the organic semiconducting layer formulation.
[0160] The invention further provides a process for preparing an
organic semiconducting layer, said process comprising the following
steps: [0161] (i) depositing on a substrate a liquid layer of a
formulation comprising one or more compounds of formula I as
described above and below, one or more organic binder resins or
precursors thereof, and optionally one or more solvents, [0162]
(ii) forming from the liquid layer a solid layer which is the
organic semiconducting layer, [0163] (iii) optionally removing the
layer from the substrate.
[0164] The process is described in more detail below.
[0165] The invention additionally provides an electronic device
comprising the said organic semiconducting layer. The electronic
device may include, without limitation, an organic field effect
transistor (OFET), organic light emitting diode (OLED), organic
photodetector (OPD), sensor, logic circuit, memory element,
capacitor or organic photovoltaic (OPV) cell. For example, the
active semiconductor channel between the drain and source in an
OFET may comprise the layer of the invention. As another example, a
charge (hole or electron) injection or transport layer in an OLED
device may comprise the layer of the invention. The formulations
according to the present invention and layers formed therefrom have
particular utility in OFETs especially in relation to the preferred
embodiments described herein.
[0166] The semiconducting compound of formula I preferably has a
charge carrier mobility, .mu., of more than 0.001
cm.sup.2V.sup.-1s.sup.-1, very preferably of more than 0.01
cm.sup.2V.sup.-1s.sup.-1, especially preferably of more than 0.1
cm.sup.2V.sup.-1s.sup.-1 and most preferably of more than 0.5
cm.sup.2V.sup.-1s.sup.-1.
[0167] The binder, which is typically a polymer, may comprise
either an insulating binder or a semiconducting binder, or mixtures
thereof may be referred to herein as the organic binder, the
polymeric binder or simply the binder.
[0168] Preferred binders according to the present invention are
materials of low permittivity, that is, those having a permittivity
.di-elect cons. of 3.3 or less. The organic binder preferably has a
permittivity .di-elect cons. of 3.0 or less, more preferably 2.9 or
less. Preferably the organic binder has a permittivity .di-elect
cons. at of 1.7 or more. It is especially preferred that the
permittivity of the binder is in the range from 2.0 to 2.9. Whilst
not wishing to be bound by any particular theory it is believed
that the use of binders with a permittivity .di-elect cons. of
greater than 3.3, may lead to a reduction in the OSC layer mobility
in an electronic device, for example an OFET. In addition, high
permittivity binders could also result in increased current
hysteresis of the device, which is undesirable.
[0169] An example of a suitable organic binder is polystyrene.
Further examples of suitable binders are disclosed for example in
US 2007/0102696 A1. Especially suitable and preferred binders are
described in the following.
[0170] In one type of preferred embodiment, the organic binder is
one in which at least 95%, more preferably at least 98% and
especially all of the atoms consist of hydrogen, fluorine and
carbon atoms.
[0171] It is preferred that the binder normally contains conjugated
bonds, especially conjugated double bonds and/or aromatic
rings.
[0172] The binder should preferably be capable of forming a film,
more preferably a flexible film. Polymers of styrene and
.alpha.-methyl styrene, for example copolymers including styrene,
.alpha.-methylstyrene and butadiene may suitably be used.
[0173] Binders of low permittivity of use in the present invention
have few permanent dipoles which could otherwise lead to random
fluctuations in molecular site energies. The permittivity .di-elect
cons. (dielectric constant) can be determined by the ASTM D150 test
method.
[0174] The permittivity values given above and below, unless stated
otherwise, refer to 1,000 Hz and 20.degree. C.
[0175] It is also preferred that in the present invention binders
are used which have solubility parameters with low polar and
hydrogen bonding contributions as materials of this type have low
permanent dipoles. A preferred range for the solubility parameters
(`Hansen parameter`) of a binder for use in accordance with the
present invention is provided in Table 1 below.
TABLE-US-00001 TABLE 1 Hansen parameter .delta..sub.d MPa.sup.1/2
.delta..sub.p MPa.sup.1/2 .delta..sub.h MPa.sup.1/2 Preferred range
14.5+.sup. 0-10 0-14 More preferred range 16+ 0-9 0-12 Most
preferred range 17+ 0-8 0-10
[0176] The three dimensional solubility parameters listed above
include: dispersive (.delta..sub.d), polar (.delta..sub.p) and
hydrogen bonding (.delta..sub.h) components (C. M. Hansen, Ind.
Eng. and Chem., Prod. Res. and Devl., 9, No 3, p 282, 1970). These
parameters may be determined empirically or calculated from known
molar group contributions as described in Handbook of Solubility
Parameters and Other Cohesion Parameters ed. A. F. M. Barton, CRC
Press, 1991. The solubility parameters of many known polymers are
also listed in this publication.
[0177] It is desirable that the permittivity of the binder has
little dependence on frequency. This is typical of non-polar
materials. Polymers and/or copolymers can be chosen as the binder
by the permittivity of their substituent groups. A list of suitable
and preferred low polarity binders is given (without limiting to
these examples) in Table 2:
TABLE-US-00002 TABLE 2 typical low frequency Binder permittivity
(.epsilon.) polystyrene 2.5 poly(.alpha.-methylstyrene) 2.6
poly(.alpha.-vinylnaphtalene) 2.6 poly(vinyltoluene) 2.6
polyethylene 2.2-2.3 cis-polybutadiene 2.0 polypropylene 2.2
poly(4-methyl-1-pentene) 2.1 poly (4-methylstyrene) 2.7
poly(chorotrifluoroethylene) 2.3-2.8 poly(2-methyl-1,3-butadiene)
2.4 poly(p-xylylene) 2.6 poly(.alpha.-.alpha.-.alpha.'-.alpha.'
tetrafluoro-p-xylylene) 2.4 poly[1,1-(2-methyl
propane)bis(4-phenyl)carbonate] 2.3 poly(cyclohexyl methacrylate)
2.5 poly(chlorostyrene) 2.6 poly(2,6-dimethyl-1,4-phenylene ether)
2.6 polyisobutylene 2.2 poly(vinyl cyclohexane) 2.2
poly(vinylcinnamate) 2.9 poly(4-vinylbiphenyl) 2.7
[0178] Further preferred binders are poly(1,3-butadiene) and
polyphenylene.
[0179] Especially preferred are formulations wherein the binder is
selected from poly-.alpha.-methyl styrene, polystyrene and
polytriarylamine or any copolymers of these, and the solvent is
selected from xylene(s), toluene, tetralin and cyclohexanone.
[0180] Copolymers containing the repeat units of the above polymers
are also suitable as binders. Copolymers offer the possibility of
improving compatibility with the compounds of formula I, modifying
the morphology and/or the glass transition temperature of the final
layer composition. It will be appreciated that in the above table
certain materials are insoluble in commonly used solvents for
preparing the layer. In these cases analogues can be used as
copolymers. Some examples of copolymers are given in Table 3
(without limiting to these examples). Both random or block
copolymers can be used. It is also possible to add more polar
monomer components as long as the overall composition remains low
in polarity.
TABLE-US-00003 TABLE 3 typical low frequency Binder permittivity
(.epsilon.) poly(ethylene/tetrafluoroethylene) 2.6
poly(ethylene/chlorotrifluoroethylene) 2.3 fluorinated
ethylene/propylene copolymer .sup. 2-2.5
polystyrene-co-.alpha.-methylstyrene 2.5-2.6 ethylene/ethyl
acrylate copolymer 2.8 poly(styrene/10% butadiene) 2.6
poly(styrene/15% butadiene) 2.6 poly(styrene/2,4 dimethylstyrene)
2.5 Topas .TM. (all grades) 2.2-2.3
[0181] Other copolymers may include: branched or non-branched
polystyrene-block-polybutadiene,
polystyrene-block(polyethylene-ran-butylene)-block-polystyrene,
polystyrene-block-polybutadiene-block-polystyrene,
polystyrene-(ethylene-propylene)-diblock-copolymers (e.g.
KRATON.RTM.-G1701E, Shell), poly(propylene-co-ethylene) and
poly(styrene-co-methylmethacrylate).
[0182] Preferred insulating binders for use in the organic
semiconductor layer formulation according to the present invention
are poly(.alpha.-methylstyrene), polyvinylcinnamate,
poly(4-vinylbiphenyl), poly(4-methylstyrene), and Topas.TM. 8007
(linear olefin, cyclo-olefin(norbornene) copolymer available from
Ticona, Germany). Most preferred insulating binders are
poly(.alpha.-methylstyrene), polyvinylcinnamate and
poly(4-vinylbiphenyl).
[0183] The binder can also be selected from crosslinkable binders,
like e.g. acrylates, epoxies, vinylethers, thiolenes etc.,
preferably having a sufficiently low permittivity, very preferably
of 3.3 or less. The binder can also be mesogenic or liquid
crystalline.
[0184] As mentioned above the organic binder may itself be a
semiconductor, in which case it will be referred to herein as a
semiconducting binder. The semiconducting binder is still
preferably a binder of low permittivity as herein defined.
Semiconducting binders for use in the present invention preferably
have a number average molecular weight (M.sub.n) of at least
1500-2000, more preferably at least 3000, even more preferably at
least 4000 and most preferably at least 5000. The semiconducting
binder preferably has a charge carrier mobility, .mu., of at least
10.sup.-5 cm.sup.2V.sup.-1s.sup.-1, more preferably at least
10.sup.-4 cm.sup.2V.sup.-1s.sup.-1.
[0185] A preferred class of semiconducting binder is a polymer as
disclosed in U.S. Pat. No. 6,630,566, preferably an oligomer or
polymer having repeat units of formula 1:
##STR00037##
wherein [0186] Ar.sup.11, Ar.sup.22 and Ar.sup.33 which may be the
same or different, denote, independently if in different repeat
units, an optionally substituted aromatic group that is mononuclear
or polynuclear, and [0187] m is an integer .gtoreq.1, preferably
.gtoreq.6, preferably .gtoreq.10, more preferably .gtoreq.15 and
most preferably .gtoreq.20.
[0188] In the context of Ar.sup.11, Ar.sup.22 and Ar.sup.33, a
mononuclear aromatic group has only one aromatic ring, for example
phenyl or phenylene. A polynuclear aromatic group has two or more
aromatic rings which may be fused (for example napthyl or
naphthylene), individually covalently linked (for example biphenyl)
and/or a combination of both fused and individually linked aromatic
rings. Preferably each Ar.sup.11, Ar.sup.22 and Ar.sup.33 is an
aromatic group which is substantially conjugated over substantially
the whole group.
[0189] Further preferred classes of semiconducting binders are
those containing substantially conjugated repeat units. The
semiconducting binder polymer may be a homopolymer or copolymer
(including a block-copolymer) of the general formula 2:
A.sub.(c)B.sub.(d) . . . Z.sub.(z) 2
wherein A, B, . . . , Z each represent a monomer unit and (c), (d),
. . . (z) each represent the mole fraction of the respective
monomer unit in the polymer, that is each (c), (d), . . . (z) is a
value from 0 to 1 and the total of (c)+(d)+ . . . +(z)=1.
[0190] Examples of suitable and preferred monomer units A, B, . . .
Z include units of formula 1 above and of formulae 3 to 8 given
below (wherein m is as defined in formula 1:
##STR00038##
wherein [0191] R.sup.a and R.sup.b are independently of each other
selected from H, F, CN, NO.sub.2, --N(R.sup.c)(R.sup.d) or
optionally substituted alkyl, alkoxy, thioalkyl, acyl, aryl, [0192]
R.sup.c and R.sup.d are independently or each other selected from
H, optionally substituted alkyl, aryl, alkoxy or polyalkoxy or
other substituents, and wherein the asterisk (*) is any terminal or
end capping group including H, and the alkyl and aryl groups are
optionally fluorinated;
##STR00039##
[0192] wherein [0193] Y is Se, Te, O, S or --N(R.sup.e), preferably
O, S or --N(R.sup.e)--, [0194] R.sup.e is H, optionally substituted
alkyl or aryl, [0195] R.sup.a and R.sup.b are as defined in formula
3;
##STR00040##
[0195] wherein R.sup.a, R.sup.b and Y are as defined in formulae 3
and 4;
##STR00041##
wherein R.sup.a, R.sup.b and Y are as defined in formulae 3 and 4,
[0196] Z is --C(T.sup.1)=C(T.sup.2)-, --C.ident.C--,
--N(R.sup.f)--, --N.dbd.N--, (R.sup.f).dbd.N--,
--N.dbd.C(R.sup.f)--, [0197] T.sup.1 and T.sup.2 independently of
each other denote H, Cl, F, --CN or lower alkyl with 1 to 8 C
atoms, [0198] R.sup.f is H or optionally substituted alkyl or
aryl;
##STR00042##
[0198] wherein R.sup.a and R.sup.b are as defined in formula 3;
##STR00043##
wherein R.sup.a, R.sup.b, R.sup.g and R.sup.h independently of each
other have one of the meanings of R.sup.a and R.sup.b in formula
3.
[0199] In the case of the polymeric formulae described herein, such
as formulae 1 to 8, the polymers may be terminated by any terminal
group, that is any end-capping or leaving group, including H.
[0200] In the case of a block-copolymer, each monomer A, B, . . . Z
may be a conjugated oligomer or polymer comprising a number, for
example 2 to 50, of the units of formulae 3-8. The semiconducting
binder preferably includes: arylamine, fluorene, thiophene, spiro
bifluorene and/or optionally substituted aryl (for example
phenylene) groups, more preferably arylamine, most preferably
triarylamine groups. The aforementioned groups may be linked by
further conjugating groups, for example vinylene.
[0201] In addition, it is preferred that the semiconducting binder
comprises a polymer (either a homo-polymer or copolymer, including
block-copolymer) containing one or more of the aforementioned
arylamine, fluorene, thiophene and/or optionally substituted aryl
groups. A preferred semiconducting binder comprises a homo-polymer
or copolymer (including block-copolymer) containing arylamine
(preferably triarylamine) and/or fluorene units. Another preferred
semiconducting binder comprises a homo-polymer or co-polymer
(including block-copolymer) containing fluorene and/or thiophene
units.
[0202] The semiconducting binder may also contain carbazole or
stilbene repeat units. For example, polyvinylcarbazole,
polystilbene or their copolymers may be used. The semiconducting
binder may optionally contain DBBDT segments (for example repeat
units as described for formula 1 above) to improve compatibility
with the soluble compounds of formula.
[0203] Very preferred semiconducting binders for use in the organic
semiconductor formulation according to the present invention are
poly(9-vinylcarbazole) and PTAA1, a polytriarylamine of the
following formula
##STR00044##
wherein m is as defined in formula 1.
[0204] For application of the semiconducting layer in p-channel
FETs, it is desirable that the semiconducting binder should have a
higher ionisation potential than the semiconducting compound of
formula I, otherwise the binder may form hole traps. In n-channel
materials the semiconducting binder should have lower electron
affinity than the n-type semiconductor to avoid electron
trapping.
[0205] The formulation according to the present invention may be
prepared by a process which comprises: [0206] (i) first mixing a
compound of formula I and an organic binder or a precursor thereof.
Preferably the mixing comprises mixing the two components together
in a solvent or solvent mixture, [0207] (ii) applying the
solvent(s) containing the compound of formula I and the organic
binder to a substrate; and optionally evaporating the solvent(s) to
form a solid organic semiconducting layer according to the present
invention, [0208] (iii) and optionally removing the solid layer
from the substrate or the substrate from the solid layer.
[0209] In step (i) the solvent may be a single solvent or the
compound of formula I and the organic binder may each be dissolved
in a separate solvent followed by mixing the two resultant
solutions to mix the compounds.
[0210] The binder may be formed in situ by mixing or dissolving a
compound of formula I in a precursor of a binder, for example a
liquid monomer, oligomer or crosslinkable polymer, optionally in
the presence of a solvent, and depositing the mixture or solution,
for example by dipping, spraying, painting or printing it, on a
substrate to form a liquid layer and then curing the liquid
monomer, oligomer or crosslinkable polymer, for example by exposure
to radiation, heat or electron beams, to produce a solid layer. If
a preformed binder is used it may be dissolved together with the
compound of formula I in a suitable solvent, and the solution
deposited for example by dipping, spraying, painting or printing it
on a substrate to form a liquid layer and then removing the solvent
to leave a solid layer. It will be appreciated that solvents are
chosen which are able to dissolve both the binder and the compound
of formula I, and which upon evaporation from the solution blend
give a coherent defect free layer.
[0211] Suitable solvents for the binder or the compound of formula
I can be determined by preparing a contour diagram for the material
as described in ASTM Method D 3132 at the concentration at which
the mixture will be employed. The material is added to a wide
variety of solvents as described in the ASTM method.
[0212] It will also be appreciated that in accordance with the
present invention the formulation may also comprise two or more
compounds of formula I and/or two or more binders or binder
precursors, and that the process for preparing the formulation may
be applied to such formulations.
[0213] Examples of suitable and preferred organic solvents include,
without limitation, dichloromethane, trichloromethane,
chlorobenzene, o-dichlorobenzene, tetrahydrofuran, anisole,
morpholine, toluene, o-xylene, m-xylene, p-xylene, 1,4-dioxane,
acetone, methylethylketone, 1,2-dichloroethane,
1,1,1-trichloroethane, 1,1,2,2-tetrachloroethane, ethyl acetate,
n-butyl acetate, N,N-dimethylformamide, dimethylacetamide,
dimethylsulfoxide, tetralin, decalin, indane and/or mixtures
thereof.
[0214] After the appropriate mixing and ageing, solutions are
evaluated as one of the following categories: complete solution,
borderline solution or insoluble. The contour line is drawn to
outline the solubility parameter-hydrogen bonding limits dividing
solubility and insolubility. `Complete` solvents falling within the
solubility area can be chosen from literature values such as
published in "Crowley, J. D., Teague, G. S. Jr and Lowe, J. W. Jr.,
Journal of Paint Technology, 1966, 38(496), 296". Solvent blends
may also be used and can be identified as described in "Solvents,
W. H. Ellis, Federation of Societies for Coatings Technology, p
9-10, 1986". Such a procedure may lead to a blend of `non` solvents
that will dissolve both the binder and the compound of formula I,
although it is desirable to have at least one true solvent in a
blend.
[0215] Especially preferred solvents for use in the formulation
according to the present invention, with insulating or
semiconducting binders and mixtures thereof, are xylene(s),
toluene, tetralin and o-dichlorobenzene.
[0216] The proportions of binder to the compound of formula I in
the formulation or layer according to the present invention are
typically 20:1 to 1:20 by weight, preferably 10:1 to 1:10 more
preferably 5:1 to 1:5, still more preferably 3:1 to 1:3 further
preferably 2:1 to 1:2 and especially 1:1. Surprisingly and
beneficially, dilution of the compound of formula I in the binder
has been found to have little or no detrimental effect on the
charge mobility, in contrast to what would have been expected from
the prior art.
[0217] In accordance with the present invention it has further been
found that the level of the solids content in the organic
semiconducting layer formulation is also a factor in achieving
improved mobility values for electronic devices such as OFETs. The
solids content of the formulation is commonly expressed as
follows:
Solids content ( % ) = a + b a + b + c .times. 100 ##EQU00001##
wherein a=mass of compound of formula I, b=mass of binder and
c=mass of solvent.
[0218] The solids content of the formulation is preferably 0.1 to
10% by weight, more preferably 0.5 to 5% by weight.
[0219] Surprisingly and beneficially, dilution of the compound of
formula I in the binder has been found to have little or no effect
on the charge mobility, in contrast to what would have been
expected from the prior art.
[0220] The compounds according to the present invention can also be
used in mixtures or blends, for example together with other
compounds having charge-transport, semiconducting, electrically
conducting, photoconducting and/or light emitting semiconducting
properties. Thus, another aspect of the invention relates to a
mixture or blend comprising one or more compounds of formula I and
one or more further compounds having one or more of the
above-mentioned properties. These mixtures can be prepared by
conventional methods that are described in prior art and known to
the skilled person. Typically the compounds are mixed with each
other or dissolved in suitable solvents and the solutions
combined.
[0221] The formulations according to the present invention can
additionally comprise one or more further components like for
example surface-active compounds, lubricating agents, wetting
agents, dispersing agents, hydrophobing agents, adhesive agents,
flow improvers, defoaming agents, deaerators, diluents which may be
reactive or non-reactive, auxiliaries, colourants, dyes or
pigments, sensitizers, stabilizers, nanoparticles or
inhibitors.
[0222] It is desirable to generate small structures in modern
microelectronics to reduce cost (more devices/unit area), and power
consumption. Patterning of the layer of the invention may be
carried out by photolithography or electron beam lithography.
[0223] Liquid coating of organic electronic devices such as field
effect transistors is more desirable than vacuum deposition
techniques. The formulations of the present invention enable the
use of a number of liquid coating techniques. The organic
semiconductor layer may be incorporated into the final device
structure by, for example and without limitation, dip coating, spin
coating, ink jet printing, letter-press printing, screen printing,
doctor blade coating, roller printing, reverse-roller printing,
offset lithography printing, flexographic printing, web printing,
spray coating, brush coating or pad printing. The present invention
is particularly suitable for use in spin coating the organic
semiconductor layer into the final device structure.
[0224] Selected formulations of the present invention may be
applied to prefabricated device substrates by ink jet printing or
microdispensing. Preferably industrial piezoelectric print heads
such as but not limited to those supplied by Aprion, Hitachi-Koki,
InkJet Technology, On Target Technology, Picojet, Spectra, Trident,
Xaar may be used to apply the organic semiconductor layer to a
substrate. Additionally semi-industrial heads such as those
manufactured by Brother, Epson, Konica, Seiko Instruments Toshiba
TEC or single nozzle microdispensers such as those produced by
Microdrop and Microfab may be used.
[0225] In order to be applied by ink jet printing or
microdispensing, the mixture of the compound of formula I and the
binder should be first dissolved in a suitable solvent. Solvents
must fulfil the requirements stated above and must not have any
detrimental effect on the chosen print head.
[0226] Additionally, solvents should have boiling points
>100.degree. C., preferably >140.degree. C. and more
preferably >150.degree. C. in order to prevent operability
problems caused by the solution drying out inside the print head.
Suitable solvents include substituted and non-substituted xylene
derivatives, di-C.sub.1-2-alkyl formamide, substituted and
non-substituted anisoles and other phenol-ether derivatives,
substituted heterocycles such as substituted pyridines, pyrazines,
pyrimidines, pyrrolidinones, substituted and non-substituted
N,N-di-C.sub.1-2-alkylanilines and other fluorinated or chlorinated
aromatics.
[0227] A preferred solvent for depositing a formulation according
to the present invention by ink jet printing comprises a benzene
derivative which has a benzene ring substituted by one or more
substituents wherein the total number of carbon atoms among the one
or more substituents is at least three. For example, the benzene
derivative may be substituted with a propyl group or three methyl
groups, in either case there being at least three carbon atoms in
total. Such a solvent enables an ink jet fluid to be formed
comprising the solvent with the binder and the compound of formula
I which reduces or prevents clogging of the jets and separation of
the components during spraying. The solvent(s) may include those
selected from the following list of examples: dodecylbenzene,
1-methyl-4-tert-butylbenzene, terpineol, limonene, isodurene,
terpinolene, cymene, diethylbenzene. The solvent may be a solvent
mixture, that is a combination of two or more solvents, each
solvent preferably having a boiling point >100.degree. C., more
preferably >140.degree. C. Such solvent(s) also enhance film
formation in the layer deposited and reduce defects in the
layer.
[0228] The ink jet fluid (that is mixture of solvent, binder and
semiconducting compound) preferably has a viscosity at 20.degree.
C. of 1 to 100 mPas, more preferably 1 to 50 mPas and most
preferably 1 to 30 mPas.
[0229] The use of the binder in the present invention allows tuning
the viscosity of the coating solution, to meet the requirements of
particular print heads.
[0230] The semiconducting layer of the present invention is
typically at most 1 micron (=1 .mu.m) thick, although it may be
thicker if required. The exact thickness of the layer will depend,
for example, upon the requirements of the electronic device in
which the layer is used. For use in an OFET or OLED, the layer
thickness may typically be 500 nm or less.
[0231] In the semiconducting layer of the present invention there
may be used two or more different compounds of formula I.
Additionally or alternatively, in the semiconducting layer there
may be used two or more organic binders of the present
invention.
[0232] As mentioned above, the invention further provides a process
for preparing the organic semiconducting layer which comprises (i)
depositing on a substrate a liquid layer of a formulation which
comprises one or more compounds of formula I, one or more organic
binders or precursors thereof and optionally one or more solvents,
and (ii) forming from the liquid layer a solid layer which is the
organic semiconducting layer.
[0233] In the process, the solid layer may be formed by evaporation
of the solvent and/or by reacting the binder resin precursor (if
present) to form the binder resin in situ. The substrate may
include any underlying device layer, electrode or separate
substrate such as silicon wafer or polymer substrate for
example.
[0234] In a particular embodiment of the present invention, the
binder may be alignable, for example capable of forming a liquid
crystalline phase. In that case the binder may assist alignment of
the compound of formula I, for example such that their aromatic
core is preferentially aligned along the direction of charge
transport. Suitable processes for aligning the binder include those
processes used to align polymeric organic semiconductors and are
described in prior art, for example in US 2004/0248338 A1.
[0235] The formulation according to the present invention can
additionally comprise one or more further components like for
example surface-active compounds, lubricating agents, wetting
agents, dispersing agents, hydrophobing agents, adhesive agents,
flow improvers, defoaming agents, deaerators, diluents, reactive or
non-reactive diluents, auxiliaries, colourants, dyes or pigments,
furthermore, especially in case crosslinkable binders are used,
catalysts, sensitizers, stabilizers, inhibitors, chain-transfer
agents or co-reacting monomers.
[0236] The present invention also provides the use of the
semiconducting compound, formulation or layer in an electronic
device. The formulation may be used as a high mobility
semiconducting material in various devices and apparatus. The
formulation may be used, for example, in the form of a
semiconducting layer or film. Accordingly, in another aspect, the
present invention provides a semiconducting layer for use in an
electronic device, the layer comprising the formulation according
to the invention. The layer or film may be less than about 30
microns. For various electronic device applications, the thickness
may be less than about 1 micron thick. The layer may be deposited,
for example on a part of an electronic device, by any of the
aforementioned solution coating or printing techniques.
[0237] The compounds and formulations according to the present
invention are useful as charge transport, semiconducting,
electrically conducting, photoconducting or light mitting materials
in optical, electrooptical, electronic, electroluminescent or
photoluminescent components or devices. Especially preferred
devices are OFETs, TFTs, ICs, logic circuits, capacitors, RFID
tags, OLEDs, OLETs, OPEDs, OPVs, OPDs, solar cells, laser diodes,
photoconductors, photodetectors, electrophotographic devices,
electrophotographic recording devices, organic memory devices,
sensor devices, charge injection layers, Schottky diodes,
planarising layers, antistatic films, conducting substrates and
conducting patterns. In these devices, the compounds of the present
invention are typically applied as thin layers or films.
[0238] For example, the compound or formulation may be used as a
layer or film, in a field effect transistor (FET) for example as
the semiconducting channel, organic light emitting diode (OLED) for
example as a hole or electron injection or transport layer or
electroluminescent layer, photodetector, chemical detector,
photovoltaic cell (PVs), capacitor sensor, logic circuit, display,
memory device and the like. The compound or formulation may also be
used in electrophotographic (EP) apparatus.
[0239] The compound or formulation is preferably solution coated to
form a layer or film in the aforementioned devices or apparatus to
provide advantages in cost and versatility of manufacture. The
improved charge carrier mobility of the compound or formulation of
the present invention enables such devices or apparatus to operate
faster and/or more efficiently.
[0240] Especially preferred electronic device are OFETs, OLEDs, OPV
devices and OPD devices, in particular bulk heterojunction (BHJ)
OPV devices. In an OFET, for example, the active semiconductor
channel between the drain and source may comprise the layer of the
invention. As another example, in an OLED device, the charge (hole
or electron) injection or transport layer may comprise the layer of
the invention.
[0241] For use in OPV or OPD devices the compounds according to the
present invention are preferably used in a formulation that
comprises or contains, more preferably consists essentially of,
very preferably exclusively of, a p-type (electron donor)
semiconductor and an n-type (electron acceptor) semiconductor. The
p-type semiconductor is constituted by a compound according to the
present invention. The n-type semiconductor can be an inorganic
material such as zinc oxide (ZnO.sub.x), zinc tin oxide (ZTO),
titan oxide (TiO.sub.x), molybdenum oxide (MoO.sub.x), nickel oxide
(NiO.sub.x), or cadmium selenide (CdSe), or an organic material
such as graphene or a fullerene or substituted fullerene, for
example an indene-C.sub.60-fullerene bisaduct like ICBA, or a
(6,6)-phenyl-butyric acid methyl ester derivatized methano C.sub.60
fullerene, also known as "PCBM-C.sub.60" or "C.sub.60PCBM", as
disclosed for example in G. Yu, J. Gao, J. C. Hummelen, F. Wudl, A.
J. Heeger, Science 1995, Vol. 270, p. 1789 ff and having the
structure shown below, or structural analogous compounds with e.g.
a C.sub.61 fullerene group, a C.sub.70 fullerene group, or a
C.sub.71 fullerene group, or an organic polymer (see for example
Coakley, K. M. and McGehee, M. D. Chem. Mater. 2004, 16, 4533).
##STR00045##
[0242] Preferably the compound according to the present invention
is blended with an n-type semiconductor such as a fullerene or
substituted fullerene, like for example PCBM-C.sub.60,
PCBM-C.sub.70, PCBM-C.sub.61, PCBM-C.sub.71, bis-PCBM-C.sub.61,
bis-PCBM-C.sub.71, ICBA
(1',1'',4',4''-tetrahydro-di[1,4]methanonaphthaleno[1,
2:2',3';56,60:2'',3''][5,6]fullerene-C60-Ih), graphene, or a metal
oxide, like for example, ZnO.sub.x, TiO.sub.x, ZTO, MoO.sub.x,
NiO.sub.x, to form the active layer in an OPV or OPD device. The
device preferably further comprises a first transparent or
semi-transparent electrode on a transparent or semi-transparent
substrate on one side of the active layer, and a second metallic or
semi-transparent electrode on the other side of the active
layer.
[0243] Further preferably the OPV or OPD device comprises, between
the active layer and the first or second electrode, one or more
additional buffer layers acting as hole transporting layer and/or
electron blocking layer, which comprise a material such as metal
oxide, like for example, ZTO, MoO.sub.x, NiO.sub.x, a conjugated
polymer electrolyte, like for example PEDOT:PSS, a conjugated
polymer, like for example polytriarylamine (PTAA), an organic
compound, like for example
N,N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'diamine
(NPB),
N,N'-diphenyl-N,N'-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine
(TPD), or alternatively as hole blocking layer and/or electron
transporting layer, which comprise a material such as metal oxide,
like for example, ZnO.sub.x, TiO.sub.x, a salt, like for example
LiF, NaF, CsF, a conjugated polymer electrolyte, like for example
poly[3-(6-trimethylammoniumhexyl)thiophene],
poly(9,9-bis(2-ethylhexyl)-fluorene]-b-poly[3-(6-trimethylammoniumhexyl)t-
hiophene], or
poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-di-
octylfluorene)] or an organic compound, like for example
tris(8-quinolinolato)-aluminium(III) (Alq.sub.3),
4,7-diphenyl-1,10-phenanthroline.
[0244] In a mixture of a compound according to the present
invention with a fullerene or modified fullerene, the ratio
compound:fullerene is preferably from 5:1 to 1:5 by weight, more
preferably from 1:1 to 1:3 by weight, most preferably 1:1 to 1:2 by
weight. A polymeric binder may also be included, from 5 to 95% by
weight. Examples of binder include polystyrene (PS), polypropylene
(PP) and polymethylmethacrylate (PMMA).
[0245] To produce thin layers in BHJ OPV devices the compounds or
formulations of the present invention may be deposited by any
suitable method. Liquid coating of devices is more desirable than
vacuum deposition techniques. Solution deposition methods are
especially preferred. The formulations of the present invention
enable the use of a number of liquid coating techniques. Preferred
deposition techniques include, without limitation, dip coating,
spin coating, ink jet printing, nozzle printing, letter-press
printing, screen printing, gravure printing, doctor blade coating,
roller printing, reverse-roller printing, offset lithography
printing, dry offset lithography printing, flexographic printing,
web printing, spray coating, dip coating, curtain coating, brush
coating, slot dye coating or pad printing. For the fabrication of
OPV devices and modules area printing method compatible with
flexible substrates are preferred, for example slot dye coating,
spray coating and the like.
[0246] Suitable solutions or formulations containing the mixture of
a compound according to the present invention with a C.sub.60 or
C.sub.70 fullerene or modified fullerene like PCBM must be
prepared. In the preparation of formulations, suitable solvent must
be selected to ensure full dissolution of both component, p-type
and n-type and take into account the boundary conditions (for
example rheological properties) introduced by the chosen printing
method.
[0247] Organic solvent are generally used for this purpose. Typical
solvents can be aromatic solvents, halogenated solvents or
chlorinated solvents, including chlorinated aromatic solvents.
Examples include, but are not limited to chlorobenzene,
1,2-dichlorobenzene, chloroform, 1,2-dichloroethane,
dichloromethane, carbon tetrachloride, toluene, cyclohexanone,
ethylacetate, tetrahydrofuran, anisole, morpholine, o-xylene,
m-xylene, p-xylene, 1,4-dioxane, acetone, methylethylketone,
1,2-dichloroethane, 1,1,1-trichloroethane,
1,1,2,2-tetrachloroethane, ethyl acetate, n-butyl acetate,
dimethylformamide, dimethylacetamide, dimethylsulfoxide, tetraline,
decaline, indane, methyl benzoate, ethyl benzoate, mesitylene and
combinations thereof.
[0248] The OPV device can for example be of any type known from the
literature (see e.g. Waldauf et al., Appl. Phys. Lett., 2006, 89,
233517).
[0249] A first preferred OPV device according to the invention
comprises the following layers (in the sequence from bottom to
top): [0250] optionally a substrate, [0251] a high work function
electrode, preferably comprising a metal oxide, like for example
ITO, serving as anode, [0252] an optional conducting polymer layer
or hole transport layer, preferably comprising an organic polymer
or polymer blend, for example of PEDOT:PSS
(poly(3,4-ethylenedioxythiophene): poly(styrene-sulfonate), or TBD
(N,N'-dyphenyl-N--N'-bis(3-methylphenyl)-1,1'biphenyl-4,4'-diamine)
or NBD
(N,N'-dyphenyl-N--N'-bis(1-napthylphenyl)-1,1'biphenyl-4,4'-diamine),
[0253] a layer, also referred to as "active layer", comprising a
p-type and an n-type organic semiconductor, which can exist for
example as a p-type/n-type bilayer or as distinct p-type and n-type
layers, or as blend or p-type and n-type semiconductor, forming a
BHJ, [0254] optionally a layer having electron transport
properties, for example comprising LiF, [0255] a low work function
electrode, preferably comprising a metal like for example aluminum,
serving as cathode, [0256] wherein at least one of the electrodes,
preferably the anode, is transparent to visible light, and [0257]
wherein the p-type semiconductor is a compound according to the
present invention.
[0258] A second preferred OPV device according to the invention is
an inverted OPV device and comprises the following layers (in the
sequence from bottom to top): [0259] optionally a substrate, [0260]
a high work function metal or metal oxide electrode, comprising for
example ITO, serving as cathode, [0261] a layer having hole
blocking properties, preferably comprising a metal oxide like
TiO.sub.x or Zn.sub.x, [0262] an active layer comprising a p-type
and an n-type organic semiconductor, situated between the
electrodes, which can exist for example as a p-type/n-type bilayer
or as distinct p-type and n-type layers, or as blend or p-type and
n-type semiconductor, forming a BHJ, [0263] an optional conducting
polymer layer or hole transport layer, preferably comprising an
organic polymer or polymer blend, for example of PEDOT:PSS or TBD
or NBD, [0264] an electrode comprising a high work function metal
like for example silver, serving as anode, [0265] wherein at least
one of the electrodes, preferably the cathode, is transparent to
visible light, and [0266] wherein the p-type semiconductor is a
compound according to the present invention.
[0267] In the OPV devices of the present invention the p-type and
n-type semiconductor materials are preferably selected from the
materials, like the compound/fullerene systems, as described
above.
[0268] When the active layer is deposited on the substrate, it
forms a BHJ that phase separates at nanoscale level. For discussion
on nanoscale phase separation see Dennler et al, Proceedings of the
IEEE, 2005, 93 (8), 1429 or Hoppe et al, Adv. Func. Mater, 2004,
14(10), 1005. An optional annealing step may be then necessary to
optimize blend morpohology and consequently OPV device
performance.
[0269] Another method to optimize device performance is to prepare
formulations for the fabrication of OPV(BHJ) devices that may
include high boiling point additives to promote phase separation in
the right way. 1,8-Octanedithiol, 1,8-diiodooctane, nitrobenzene,
chloronaphthalene, and other additives have been used to obtain
high-efficiency solar cells. Examples are disclosed in J. Peet, et
al, Nat. Mater., 2007, 6, 497 or Frechet et al. J. Am. Chem. Soc.,
2010, 132, 7595-7597.
[0270] The compound, formulation and layer of the present invention
are also suitable for use in an OFET as the semiconducting channel.
Accordingly, the invention also provides an OFET comprising a gate
electrode, an insulating (or gate insulator) layer, a source
electrode, a drain electrode and an organic semiconducting channel
connecting the source and drain electrodes, wherein the organic
semiconducting channel comprises a compound of formula I,
formulation or organic semiconducting layer according to the
present invention. Other features of the OFET are well known to
those skilled in the art.
[0271] OFETs where an OSC material is arranged as a thin film
between a gate dielectric and a drain and a source electrode, are
generally known, and are described for example in U.S. Pat. No.
5,892,244, U.S. Pat. No. 5,998,804, U.S. Pat. No. 6,723,394 and in
the references cited in the background section. Due to the
advantages, like low cost production using the solubility
properties of the compounds according to the invention and thus the
processibility of large surfaces, preferred applications of these
FETs are such as integrated circuitry, TFT displays and security
applications.
[0272] The gate, source and drain electrodes and the insulating and
semiconducting layer in the OFET device may be arranged in any
sequence, provided that the source and drain electrode are
separated from the gate electrode by the insulating layer, the gate
electrode and the semiconductor layer both contact the insulating
layer, and the source electrode and the drain electrode both
contact the semiconducting layer.
[0273] An OFET device according to the present invention preferably
comprises: [0274] a source electrode, [0275] a drain electrode,
[0276] a gate electrode, [0277] a semiconducting layer, [0278] one
or more gate insulator layers, [0279] optionally a substrate.
wherein the semiconductor layer preferably comprises a compound of
formula I or a formulation according to the present invention.
[0280] The OFET device can be a top gate device or a bottom gate
device. Suitable structures and manufacturing methods of an OFET
device are known to the skilled in the art and are described in the
literature, for example in US 2007/0102696 A1.
[0281] The gate insulator layer preferably comprises a
fluoropolymer, like e.g. the commercially available Cytop 809M.RTM.
or Cytop 107M.RTM. (from Asahi Glass). Preferably the gate
insulator layer is deposited, e.g. by spin-coating, doctor blading,
wire bar coating, spray or dip coating or other known methods, from
a formulation comprising an insulator material and one or more
solvents with one or more fluoro atoms (fluorosolvents), preferably
a perfluorosolvent. A suitable perfluorosolvent is e.g. FC75.RTM.
(available from Acros, catalogue number 12380). Other suitable
fluoropolymers and fluorosolvents are known in prior art, like for
example the perfluoropolymers Teflon AF.RTM. 1600 or 2400 (from
DuPont) or Fluoropel.RTM. (from Cytonix) or the perfluorosolvent FC
43.RTM. (Acros, No. 12377). Especially preferred are organic
dielectric materials having a low permittivity (or dielectric
constant) from 1.0 to 5.0, very preferably from 1.8 to 4.0 ("low k
materials"), as disclosed for example in US 2007/0102696 A1 or U.S.
Pat. No. 7,095,044.
[0282] In security applications, OFETs and other devices with
semiconducting materials according to the present invention, like
transistors or diodes, can be used for RFID tags or security
markings to authenticate and prevent counterfeiting of documents of
value like banknotes, credit cards or ID cards, national ID
documents, licenses or any product with monetary value, like
stamps, tickets, shares, cheques etc.
[0283] Alternatively, the materials according to the invention can
be used in OLEDs, e.g. as the active display material in a flat
panel display applications, or as backlight of a flat panel display
like e.g. a liquid crystal display. Common OLEDs are realized using
multilayer structures. An emission layer is generally sandwiched
between one or more electron-transport and/or hole-transport
layers. By applying an electric voltage electrons and holes as
charge carriers move towards the emission layer where their
recombination leads to the excitation and hence luminescence of the
lumophor units contained in the emission layer. The inventive
compounds, materials and films may be employed in one or more of
the charge transport layers and/or in the emission layer,
corresponding to their electrical and/or optical properties.
Furthermore their use within the emission layer is especially
advantageous, if the compounds, materials and films according to
the invention show electroluminescent properties themselves or
comprise electroluminescent groups or compounds. The selection,
characterization as well as the processing of suitable monomeric,
oligomeric and polymeric compounds or materials for the use in
OLEDs is generally known by a person skilled in the art, see, e.g.,
Muller, Synth. Metals, 2000, 111-112, 31, Alcala, J. Appl. Phys.,
2000, 88, 7124 and the literature cited therein.
[0284] According to another use, the materials according to this
invention, especially those showing photoluminescent properties,
may be employed as materials of light sources, e.g. in display
devices, as described in EP 0 889 350 A1 or by C. Weder et al.,
Science, 1998, 279, 835.
[0285] A further aspect of the invention relates to both the
oxidised and reduced form of the compounds according to this
invention. Either loss or gain of electrons results in formation of
a highly delocalised ionic form, which is of high conductivity.
This can occur on exposure to common dopants. Suitable dopants and
methods of doping are known to those skilled in the art, e.g. from
EP 0 528 662, U.S. Pat. No. 5,198,153 or WO 96/21659.
[0286] The doping process typically implies treatment of the
semiconductor material with an oxidating or reducing agent in a
redox reaction to form delocalised ionic centres in the material,
with the corresponding counterions derived from the applied
dopants. Suitable doping methods comprise for example exposure to a
doping vapor in the atmospheric pressure or at a reduced pressure,
electrochemical doping in a solution containing a dopant, bringing
a dopant into contact with the semiconductor material to be
thermally diffused, and ion-implantantion of the dopant into the
semiconductor material.
[0287] When electrons are used as carriers, suitable dopants are
for example halogens (e.g., I.sub.2, Cl.sub.2, Br.sub.2, ICl,
ICl.sub.3, IBr and IF), Lewis acids (e.g., PF.sub.5, AsF.sub.5,
SbF.sub.5, BF.sub.3, BCl.sub.3, SbCl.sub.5, BBr.sub.3 and
SO.sub.3), protonic acids (e.g., HF, HCl, HNO.sub.3,
H.sub.2SO.sub.4, HClO.sub.4, FSO.sub.3H and ClSO.sub.3H), organic
acids, or amino acids, transition metal compounds (e.g.,
FeCl.sub.3, FeOCl, Fe(ClO.sub.4).sub.3,
Fe(4-CH.sub.3C.sub.6H.sub.4SO.sub.3).sub.3, TiCl.sub.4, ZrCl.sub.4,
HfCl.sub.4, NbF.sub.5, NbCl.sub.5, TaCl.sub.5, MoF.sub.5,
MoCl.sub.5, WF.sub.5, WCl.sub.6, UF.sub.6 and LnCl.sub.3 (wherein
Ln is a lanthanoid), anions (e.g., Cl.sup.-, Br.sup.-, I.sup.-,
I.sub.3.sup.-, HSO.sub.4.sup.-, SO.sub.4.sup.2-, NO.sub.3.sup.-,
ClO.sub.4.sup.-, BF.sub.4.sup.-, PF.sub.6.sup.-, AsF.sub.6.sup.-,
SbF.sub.6.sup.-, FeCl.sub.4.sup.-, Fe(CN).sub.6.sup.3-, and anions
of various sulfonic acids, such as aryl-SO.sub.3.sup.-). When holes
are used as carriers, examples of dopants are cations (e.g.,
H.sup.+, Li.sup.+, Na.sup.+, K.sup.+, Rb.sup.+ and Cs.sup.+),
alkali metals (e.g., Li, Na, K, Rb, and Cs), alkaline-earth metals
(e.g., Ca, Sr, and Ba), O.sub.2, XeOF.sub.4,
(NO.sub.2.sup.+)(SbF.sub.6.sup.-),
(NO.sub.2.sup.+)(SbCl.sub.6.sup.-),
(NO.sub.2.sup.+)(BF.sub.4.sup.-), AgClO.sub.4, H.sub.2IrCl.sub.6,
La(NO.sub.3).sub.3.6H.sub.2O, FSO.sub.2OOSO.sub.2F, Eu,
acetylcholine, R.sub.4N.sup.+, (R is an alkyl group),
R.sub.4P.sup.+ (R is an alkyl group), R.sub.6As.sup.+ (R is an
alkyl group), and R.sub.3S.sup.+ (R is an alkyl group).
[0288] The conducting form of the compounds of the present
invention can be used as an organic "metal" in applications
including, but not limited to, charge injection layers and ITO
planarising layers in OLED applications, films for flat panel
displays and touch screens, antistatic films, printed conductive
substrates, patterns or tracts in electronic applications such as
printed circuit boards and condensers.
[0289] The compounds and formulations according to the present
invention may also be suitable for use in organic plasmon-emitting
diodes (OPEDs), as described for example in Koller et al., Nat.
Photonics, 2008, 2, 684.
[0290] According to another use, the materials according to the
present invention can be used alone or together with other
materials in or as alignment layers in LCD or OLED devices, as
described for example in US 2003/0021913. The use of charge
transport compounds according to the present invention can increase
the electrical conductivity of the alignment layer. When used in an
LCD, this increased electrical conductivity can reduce adverse
residual dc effects in the switchable LCD cell and suppress image
sticking or, for example in ferroelectric LCDs, reduce the residual
charge produced by the switching of the spontaneous polarisation
charge of the ferroelectric LCs. When used in an OLED device
comprising a light emitting material provided onto the alignment
layer, this increased electrical conductivity can enhance the
electroluminescence of the light emitting material. The compounds
or materials according to the present invention having mesogenic or
liquid crystalline properties can form oriented anisotropic films
as described above, which are especially useful as alignment layers
to induce or enhance alignment in a liquid crystal medium provided
onto said anisotropic film. The materials according to the present
invention may also be combined with photoisomerisable compounds
and/or chromophores for use in or as photoalignment layers, as
described in US 2003/0021913.
[0291] According to another use, the materials according to the
present invention, especially their water-soluble derivatives (for
example with polar or ionic side groups) or ionically doped forms,
can be employed as chemical sensors or materials for detecting and
discriminating DNA sequences. Such uses are described for example
in L. Chen, D. W. McBranch, H. Wang, R. Helgeson, F. Wudl and D. G.
Whitten, Proc. Natl. Acad. Sci. U.S.A. 1999, 96, 12287; D. Wang, X.
Gong, P. S. Heeger, F. Rininsland, G. C. Bazan and A. J. Heeger,
Proc. Natl. Acad. Sci. U.S.A. 2002, 99, 49; N. DiCesare, M. R.
Pinot, K. S. Schanze and J. R. Lakowicz, Langmuir 2002, 18, 7785;
D. T. McQuade, A. E. Pullen, T. M. Swager, Chem. Rev. 2000, 100,
2537.
[0292] Unless the context clearly indicates otherwise, as used
herein plural forms of the terms herein are to be construed as
including the singular form and vice versa.
[0293] Throughout the description and claims of this specification,
the words "comprise" and "contain" and variations of the words, for
example "comprising" and "comprises", mean "including but not
limited to", and are not intended to (and do not) exclude other
components.
[0294] It will be appreciated that variations to the foregoing
embodiments of the invention can be made while still falling within
the scope of the invention. Each feature disclosed in this
specification, unless stated otherwise, may be replaced by
alternative features serving the same, equivalent or similar
purpose. Thus, unless stated otherwise, each feature disclosed is
one example only of a generic series of equivalent or similar
features.
[0295] All of the features disclosed in this specification may be
combined in any combination, except combinations where at least
some of such features and/or steps are mutually exclusive. In
particular, the preferred features of the invention are applicable
to all aspects of the invention and may be used in any combination.
Likewise, features described in non-essential combinations may be
used separately (not in combination).
[0296] It will be appreciated that many of the features described
above, particularly of the preferred embodiments, are inventive in
their own right and not just as part of an embodiment of the
present invention. Independent protection may be sought for these
features in addition to or alternative to any invention presently
claimed.
[0297] The invention will now be described in more detail by
reference to the following examples, which are illustrative only
and do not limit the scope of the invention.
[0298] Unless stated otherwise, above and below percentages are
percent by weight and temperatures are given in degrees
Celsius.
Example 1
3,6-Bis-(3-octyl-thiophen-2-yl)-thieno[3,2-b]thiophene-2,5-dione
(1.1)
##STR00046##
[0300] The 3,6-diiodo-thieno[3,2-b]thiophene-2,5-dione (1.000 g;
2.370 mmol), tributyl-(3-octyl-thiophen-2-yl)-stannane (Bras,
Jerome; Guillerez, Stephane; Pepin-Donat, Brigitte. Chem. Mater.
2000, 12, 2372-2384) (2.977 g; 5.213 mmol),
PdCl.sub.2(PPh.sub.3).sub.2 (166 mg; 0.237 mmol), copper Iodide (45
mg; 0.237 mmol) and toluene (100 cm.sup.3) is added in a 250
cm.sup.3 flask. The resulting mixture is carefully degassed for 30
minutes, and then heated at 90.degree. C. for 16 h under nitrogen
protection. Silica is added and the solvent removed in vacuo. The
crude product is purified by column chromatography (eluent:
petroleum ether 40-60:DCM; 70:30 ratio) to recover the pure product
as a red powder (612 mg, Yield: 46%). NMR (1H, 300 MHz, CDCl3):
.delta. 7.47 (d, J=5.1 Hz, 2H); 7.02 (d, J=5.1 Hz, 2H); 2.57 (t,
J=7.8 Hz, 4H); 1.61 (m, 4H); 1.26 (m, 20H); 0.86 (t, J=6.7 Hz, 6H).
NMR (.sup.13C, 75 MHz, CDCl.sub.3): .delta. 186.92; 154.77; 145.82;
129.91; 192.26; 129.05; 123.79; 32.01; 30.70; 30.06; 29.61; 29.52;
29.37; 22.81; 14.27.
3,6-Bis-(5-bromo-3-octyl-thiophen-2-yl)-thieno[3,2-b]thiophene-2,5-dione
(1.2)
##STR00047##
[0302] The
3,6-bis-(3-octyl-thiophen-2-yl)-thieno[3,2-b]thiophene-2,5-dion- e
(1.1) (418 mg; 0.748 mmol) is dissolved in anhydrous DMF (7.5
cm.sup.3) at 60.degree. C. before adding under the protection of
inert atmosphere and light, the 1-Bromo-pyrrolidine-2,5-dione (NBS)
(253 mg; 1.421 mmol) slowly in one portion. After 24 hours, the
reaction mixture is poured in a 5% aqueous solution of sodium
thiosulfate. The aqueous layer is extracted with DCM (3.times.100
cm.sup.3) and the combined organic fraction dried over magnesium
sulfate and removed in vacuo. The crude product is purified several
times by column chromatography (eluent: petroleum ether 40-60:DCM;
70:30 ratio) to recover the pure product as a red powder (205 mg,
Yield: 38%). NMR (.sup.1H, 300 MHz, CDCl.sub.3): .delta. 6.99 (s,
2H); 2.50 (t, J=7.8 Hz, 4H); 1.57 (m, 6H); 1.21 (m, 18H); 0.86 (t,
J=6.7 Hz, 6H). NMR (.sup.13C, 75 MHz, CDCl.sub.3): .delta. 186.29;
154.78; 146.57; 132.64; 128.15; 125.13; 116.75; 31.98; 30.52;
30.25; 29.52; 29.47; 29.33; 22.81; 14.27.
* * * * *
References