U.S. patent application number 14/322401 was filed with the patent office on 2014-10-23 for semiconductor laser with varied-width waveguide and semiconductor laser module including the same.
The applicant listed for this patent is Furukawa Electric Co., Ltd.. Invention is credited to Satoshi ARAKAWA, Masaki FUNABASHI, Yutaka OHKI, Shunsuke OKUYAMA, Hidehiro TANIGUCHI, Junji YOSHIDA.
Application Number | 20140314113 14/322401 |
Document ID | / |
Family ID | 44476463 |
Filed Date | 2014-10-23 |
United States Patent
Application |
20140314113 |
Kind Code |
A1 |
OHKI; Yutaka ; et
al. |
October 23, 2014 |
SEMICONDUCTOR LASER WITH VARIED-WIDTH WAVEGUIDE AND SEMICONDUCTOR
LASER MODULE INCLUDING THE SAME
Abstract
A semiconductor laser outputs a laser light from an output facet
of a waveguide having an index waveguide structure, via a lens
system. The waveguide includes, in order from a rear facet opposite
to the output facet, a first narrow portion, a wide portion that is
wider than the first narrow portion, a second narrow portion
narrower than the wide portion, a first tapered portion formed
between the first narrow portion and the wide portion, which
expands toward the wide portion, and a second tapered portion
formed between the wide portion and the second narrow portion,
which narrows toward the second narrow portion. Each of the first
narrow portion, the wide portion, and the second narrow portion has
a uniform width.
Inventors: |
OHKI; Yutaka; (Tokyo,
JP) ; ARAKAWA; Satoshi; (Tokyo, JP) ; OKUYAMA;
Shunsuke; (Tokyo, JP) ; FUNABASHI; Masaki;
(Tokyo, JP) ; YOSHIDA; Junji; (Tokyo, JP) ;
TANIGUCHI; Hidehiro; (Tokyo, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Furukawa Electric Co., Ltd. |
Tokyo |
|
JP |
|
|
Family ID: |
44476463 |
Appl. No.: |
14/322401 |
Filed: |
July 2, 2014 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13030536 |
Feb 18, 2011 |
8811447 |
|
|
14322401 |
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Current U.S.
Class: |
372/43.01 |
Current CPC
Class: |
H01S 5/02248 20130101;
H01S 5/02415 20130101; H01S 5/1064 20130101; H01S 5/20 20130101;
H01S 5/0014 20130101; H01S 5/227 20130101; H01S 5/02284 20130101;
H01S 2301/185 20130101 |
Class at
Publication: |
372/43.01 |
International
Class: |
H01S 5/20 20060101
H01S005/20; H01S 5/022 20060101 H01S005/022 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 19, 2010 |
JP |
2010035333 |
Claims
1. A semiconductor laser that outputs a laser light from an output
facet of a waveguide having an index waveguide structure, via a
lens system, wherein the waveguide includes, in order from a rear
facet opposite to the output facet, a first narrow portion, a wide
portion that is wider than the first narrow portion, a second
narrow portion narrower than the wide portion, a first tapered
portion formed between the first narrow portion and the wide
portion, the first tapered portion expanding toward the wide
portion, and a second tapered portion formed between the wide
portion and the second narrow portion, the second tapered portion
narrowing toward the second narrow portion, and each of the first
narrow portion, the wide portion, and the second narrow portion has
a uniform width.
2. The semiconductor laser according to claim 1, wherein an
inclination angle .theta. represented by .theta.=arctan
[(.DELTA.W/2)/Lt2] is 0.6 degrees or less, where .DELTA.W is
difference between a width of the wide portion and a width of the
second narrow portion in the waveguide and Lt2 is a length of the
second tapered portion.
3. The semiconductor laser according to claim 2, wherein the
inclination angle .theta. satisfies Ln2.gtoreq.106.theta.-0.00681,
where 0.47<.theta..ltoreq.0.60, Ln2.gtoreq.317.theta.-100, where
0.32<.theta..ltoreq.0.47, and Ln2.gtoreq.0, where
.theta..ltoreq.0.32, where Ln2 is length of the second narrow
portion.
4. The semiconductor laser according to claim 1, wherein a length
of the first narrow portion is equal to or longer than 30% of a
cavity length of a resonator that is made up with the output facet
and the rear facet.
5. The semiconductor laser according to claim 1, wherein a
difference between a width of the wide portion and a width of the
second narrow portion is in a range of 1.0 micrometer to 3.3
micrometers.
6. The semiconductor laser according to claim 1, wherein a length
of the second tapered portion is equal to or longer than 50
micrometers.
7. The semiconductor laser according to claim 1, wherein a cavity
length of a resonator that is made up with the output facet and the
rear facet is equal to or longer than 1000 micrometers.
8. The semiconductor laser according to claim 1, further comprising
a current non-injection structure that prevents a current from
flowing into the second portion and at least a part of the second
tapered portion.
9. The semiconductor laser according to claim 1, wherein the
waveguide further includes a third narrow portion formed on the
rear facet side, the third narrow portion having a uniform width
approximately same as a width of the second narrow portion, and a
third tapered portion formed between the third narrow portion and
the first narrow portion, the third tapered portion narrowing
toward the first narrow portion.
10. The semiconductor laser according to claim 1, wherein the
semiconductor laser is a distributed feedback laser.
11. The semiconductor laser according to claim 1, wherein the
semiconductor laser is a distributed feedback laser employing a
phase-shift diffraction grating.
12. A semiconductor laser that outputs a laser light from an output
facet of a waveguide having an index waveguide structure, via a
lens system, wherein the waveguide includes, in order from a rear
facet opposite to the output facet, a first narrow portion, a wide
portion wider than the first narrow portion, a first tapered
portion formed between the first narrow portion and the wide
portion, the first tapered portion expanding toward the wide
portion, and a second tapered portion narrowing from the side
portion toward the output facet, each of the first narrow portion
and the wide portion has a uniform width, and an inclination angle
.theta. represented by .theta.=arctan [(.DELTA.W/2)/Lt2] is 0.32
degrees or less, where .DELTA.W is difference between a width of
the wide portion and a width of the second tapered portion on the
output facet side and Lt2 is length of the second tapered
portion.
13. A semiconductor laser module comprising: a semiconductor laser
that outputs a laser light from an output facet of a waveguide
having an index waveguide structure; a coupling target to which the
laser light is to be coupled; and a lens system that couples the
laser light to the coupling target, wherein the waveguide includes,
in order from a rear facet opposite to the output facet, a first
narrow portion, a wide portion that is wider than the first narrow
portion, a second narrow portion narrower than the wide portion, a
first tapered portion formed between the first narrow portion and
the wide portion, the first tapered portion expanding toward the
wide portion, and a second tapered portion formed between the wide
portion and the second narrow portion, the second tapered portion
narrowing toward the second narrow portion, and each of the first
narrow portion, the wide portion, and the second narrow portion has
a uniform width.
14. The semiconductor laser module according to claim 13, wherein
the coupling target is an optical fiber, and optical power of a
laser light output from the optical fiber is equal to or greater
than 300 milliwatts.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is based upon and claims the benefit of
priority from the prior Japanese Patent Applications No.
2010-035333, filed on Feb. 19, 2010; the entire contents of which
are incorporated herein by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a semiconductor laser with
an index waveguide structure and a semiconductor laser module
including the semiconductor laser.
[0004] 2. Description of the Related Art
[0005] A conventional semiconductor laser oscillates laser light by
taking the light to make a roundtrip inside an optical resonator
while amplifying the light by confining the light inside an active
layer with an index waveguide structure. The laser light output
from the semiconductor laser propagates through the space with a
predetermined spread angle. Therefore, the output light usually is
provided for use after being collimated and optically-coupled to a
coupling target, such as an optical fiber and a recording surface
of an optical disk, by a lens system.
[0006] In order to increase a saturated optical power of the
semiconductor laser, it is effective to increase the width of a
waveguide to reduce the electrical resistance. However, excessive
expansion of the width of the waveguide is not preferable because a
lateral mode of a waveguide mode turns into a multimode. For
instance, in Japanese Patent Application Laid-Open No. 2002-280668,
the width of the waveguide is increased only at an output facet
side while the width of the waveguide at a rear facet side is kept
to a width with which a single mode can be achieved, thereby
providing a high-intensity laser light in a single mode.
[0007] In Japanese Patent Application Laid-Open No. 2002-280668,
portions having different waveguide widths are connected by a
tapered portion having a continuously changing width. In this
description, a waveguide with a structure having such tapered
portion being formed will be referred to as a tapered waveguide. On
the other hand, a waveguide with a structure having its width being
uniform along an optical waveguide direction will be referred to as
a straight waveguide.
SUMMARY OF THE INVENTION
[0008] According to an aspect of the present invention, there is
provided a semiconductor laser that outputs a laser light from an
output facet of a waveguide having an index waveguide structure,
via a lens system. The waveguide includes, in order from a rear
facet opposite to the output facet, a first narrow portion, a wide
portion that is wider than the first narrow portion, a second
narrow portion narrower than the wide portion, a first tapered
portion formed between the first narrow portion and the wide
portion, which expands toward the wide portion, and a second
tapered portion formed between the wide portion and the second
narrow portion, which narrows toward the second narrow portion.
Each of the first narrow portion, the wide portion, and the second
narrow portion has a uniform width.
[0009] According to another aspect of the present invention, there
is provided a semiconductor laser that outputs a laser light from
an output facet of a waveguide having an index waveguide structure,
via a lens system. The waveguide includes, in order from a rear
facet opposite to the output facet, a first narrow portion, a wide
portion wider than the first narrow portion, a first tapered
portion formed between the first narrow portion and the wide
portion, which expands toward the wide portion, and a second
tapered portion narrowing from the side portion toward the output
facet. Each of the first narrow portion and the wide portion has a
uniform width. An inclination angle .theta. represented by
.theta.=arctan [(.DELTA.W/2)/Lt2] is 0.32 degrees or less, where
.DELTA.W is difference between a width of the wide portion and a
width of the second tapered portion on the output facet side and
Lt2 is length of the second tapered portion.
[0010] According to still another aspect of the present invention,
there is provided a semiconductor laser module including a
semiconductor laser that outputs a laser light from an output facet
of a waveguide having an index waveguide structure, a coupling
target to which the laser light is to be coupled, and a lens system
that couples the laser light to the coupling target. The waveguide
includes, in order from a rear facet opposite to the output facet,
a first narrow portion, a wide portion that is wider than the first
narrow portion, a second narrow portion narrower than the wide
portion, a first tapered portion formed between the first narrow
portion and the wide portion, which expands toward the wide
portion, and a second tapered portion formed between the wide
portion and the second narrow portion, which narrows toward the
second narrow portion. Each of the first narrow portion, the wide
portion, and the second narrow portion has a uniform width.
[0011] These and other objects, features, aspects, and advantages
of the present disclosure will become apparent to those skilled in
the art from the following detailed description, which, taken in
conjunction with the annexed drawings, discloses preferred
embodiments of the present disclosure.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] FIG. 1 is a schematic partial cross-sectional side view of a
semiconductor module including a semiconductor laser according to a
first embodiment of the present invention;
[0013] FIG. 2 is a diagram showing a schematic cross-section and a
profile of equivalent refractive index in a plane perpendicular to
an optical waveguide direction of the semiconductor laser shown in
FIG. 1;
[0014] FIG. 3 is a cross-sectional view taken along line A-A,
showing a waveguide structure of the semiconductor laser shown in
FIG. 2;
[0015] FIG. 4 is a schematic view showing expansion and far field
patterns of laser lights output from a waveguide in the
semiconductor laser according to the first embodiment and from a
waveguide being a conventional tapered waveguide;
[0016] FIG. 5 is a diagram explaining a kink current;
[0017] FIG. 6 is a diagram explaining a saturated optical
power;
[0018] FIG. 7A is a diagram showing a straight waveguide structure
of a waveguide in a semiconductor device according to a first
comparative example;
[0019] FIG. 7B is a diagram showing a tapered waveguide structure
of a waveguide in a semiconductor laser according to a second
comparative example;
[0020] FIG. 8 is a graph showing a relationship between a ratio of
a length of a first narrow portion to a cavity length and a
saturated optical power;
[0021] FIG. 9 is a graph showing a distribution of optical
intensity in an optical waveguide direction of a waveguide of a
Fabry-Perot resonator;
[0022] FIG. 10 is a graph showing a relationship between a
difference .DELTA.W between a width of a wide portion and a width
of a second narrow portion and a kink current;
[0023] FIG. 11 is a graph showing a relationship between an
inclination angle and an FFPh;
[0024] FIG. 12 is a graph showing a calculation value in a
relationship between a length of a second tapered portion and an
inclination angle in upper and lower limits of a preferred
difference .DELTA.W;
[0025] FIG. 13 is a graph showing a relationship between the width
of the second narrow portion and an optical power in a case where a
driving current is 1800 mA in the first embodiment and the first
and second comparative examples;
[0026] FIG. 14 is a graph showing a relationship between the width
of the second narrow portion and an FFPh;
[0027] FIG. 15 is a graph showing a relationship between the width
of the second narrow portion and an FFPv;
[0028] FIG. 16 is a graph showing a relationship between the width
of the second narrow portion and an FFPv/FFPh;
[0029] FIG. 17 is a graph showing a relationship between the
FFPv/FFPh and a coupling efficiency;
[0030] FIG. 18 is a graph showing a relationship between the width
of the second narrow portion and the coupling efficiency;
[0031] FIG. 19 is a graph showing a relationship between the width
of the second narrow portion and an optical power after a coupling
to an optical fiber in a case where a driving current is 1800 mA in
the first embodiment and the first and second comparative
examples;
[0032] FIG. 20 is a graph showing a length Ln2 necessary for
reducing an interference phenomenon in a case where a length Lt2 is
changed;
[0033] FIG. 21 is a graph showing a case where a horizontal axis in
FIG. 20 represents an inclination angle .theta.;
[0034] FIG. 22 is a graph showing a relationship between the
inclination angle and an area of the waveguide;
[0035] FIG. 23 is a graph showing a relationship between the Lt2
and the area of the waveguide;
[0036] FIG. 24 is a cross-sectional view showing a waveguide
structure of a semiconductor laser according to a second embodiment
of the present invention;
[0037] FIG. 25 is a diagram showing a state of the waveguide
structure on a substrate viewed from above;
[0038] FIG. 26 is a cross-sectional view showing a waveguide
structure of a semiconductor laser according to a third embodiment
of the present invention; and
[0039] FIG. 27 is a graph showing an optical intensity distribution
inside a resonator of a DFB laser by a phase shift grating.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0040] In a tapered waveguide, as a width of a waveguide on an
output facet side is increased, a shape of a far field pattern
(FFP) of an output laser light becomes more elliptical, which makes
it difficult to couple the laser light to a coupling target using a
lens system with high efficiency. Consequently, even if optical
intensity (optical power) of laser light output from a
semiconductor laser is increased, the usable optical power of laser
light may not increase in a proportional manner.
[0041] In the following, semiconductor lasers and semiconductor
laser modules according to embodiments of the present invention
will be described in detail with reference to accompanying
drawings. The present invention is not limited to the following
embodiments. In the drawings, the same or corresponding structural
elements are assigned with the same reference numerals. It should
be noted that the drawings show schematic examples. Accordingly, a
relationship between a thickness and a width of each layer, a ratio
of the layers, and so on, may be different from real values. Among
the drawings, there may be parts where the relationships and ratios
of the shown sizes are different from one another.
[0042] FIG. 1 is a schematic partial cross-sectional side view of a
semiconductor laser module including a semiconductor laser
according to a first embodiment of the present invention.
[0043] As shown in FIG. 1, a semiconductor laser module 100
includes a housing 1, a Peltier module 2, a base plate 3, a
monitoring photodiode 4, a heatsink 5, a first lens 7a, an isolator
8, a thermistor 9, a semiconductor laser 10, a second lens 7b, a
ferrule 11, and an optical fiber 12. The housing 1 is a chassis
made of, for example, Cu--W alloy. The Peltier module 2 is a
temperature controller arranged on an inner bottom surface of the
housing 1. The base plate 3 is arranged on the Peltier module 2.
The monitoring photodiode 4, the heatsink 5, the first lens 7a, and
the isolator 8 are arranged on the base plate 3 in this order. The
first lens 7a is held by a lens holder 6 mounted on the base plate
3. The thermistor 9 and the semiconductor laser 10 are arranged on
the heatsink 5. The second lens 7b and the ferrule 11 are held
inside the projecting portion 1a of the housing 1. The optical
fiber 12 is fixed to the ferrule 11 as being inserted in the
ferrule 11.
[0044] The semiconductor laser 10 is driven by a driving current
from a controller (not shown) and outputs a laser light LL from an
output facet. The first lens 7a, the isolator 8, the second lens
7b, and the optical fiber 12 are located on an optical axis of the
laser light LL. The first lens 7a is a spherical lens, for
instance, and collimates the laser light LL. The isolator 8
prevents the laser light LL from returning to the semiconductor
laser 10 due to reflection, or the like, while transmitting the
laser light LL toward the second lens 7b. The second lens 7b is a
spherical lens, for instance, and focuses the laser light LL to a
facet of the optical fiber 12 to optically couple the laser light
LL to the optical fiber 12. The focused laser light LL propagates
through the optical fiber 12 and is used for a predetermined
purpose. In the semiconductor laser module 100, the first lens 7a
and the second lens 7b form a lens system 7.
[0045] The monitoring photodiode 4 is arranged at a back of a rear
facet that is opposite to the output facet of the semiconductor
laser 10. The monitoring photodiode 4 receives a laser light output
from the rear faect. The controller detects optical intensity of
the laser light LL based on an amount of light received by the
monitoring photodiode 4, and controls the optical intensity of the
laser light LL to a desired value by adjusting an amount of the
driving current.
[0046] The thermistor 9 is located near the semiconductor laser 10.
The controller detects a temperature of the semiconductor laser 10
based on a temperature detected by the thermistor 9, and controls
the semiconductor laser 10 to a desired temperature by adjusting a
current supply to the Peltier module 2. In order to improve cooling
and heating efficiencies in the Peltier module 2, the base plate 3
and the heatsink 5 are preferably made of a material having high
thermal conductivity, such as Cu--W alloy and diamond.
[0047] FIG. 2 is a diagram showing a schematic cross-section and a
profile of equivalent refractive index in a plane perpendicular to
an optical waveguide direction of the semiconductor laser 10. As
shown in FIG. 2, the semiconductor laser 10 has a structure in
which a lower cladding layer 102, an active layer 103, and an upper
cladding layer 104 are epitaxially grown on a (100) plane of a
substrate 101 in this order. The substrate 101 is made of n-InP.
The lower cladding layer 102 is made of n-InP, and also serves as a
buffer layer. The active layer 103 is made of an InGaAsP-based
material, and has a separate confinement heterostructure multiple
quantum well (SCH-MQW) structure. The upper cladding layer 104 is
made of p-InP. The SCH-MQW structure has a structure in which
quantum well layers and barrier layers are alternately layered with
the top and bottom layers as the barrier layers, and the layered
structure of the quantum well layers and the barrier layers is
sandwiched between two separate confinement heterostructure (SCH)
layers from up and down in the growth direction.
[0048] The lower cladding layer 102 in the upper part, the active
layer 103, and the upper cladding layer 104 are processed into a
mesa stripe shape. A lower blocking layer 105 and an upper blocking
layer 106 are formed on both sides of the mesa stripe so that the
mesa stripe is buried in the lower blocking layer 105 and the upper
blocking layer 106. The lower blocking layer 105 and the upper
blocking layer 106 are formed as current blocking layers. The lower
blocking layer 105 is made of p-InP. The upper blocking layer 106
is made of n-InP. Accordingly, the semiconductor laser 10 has a
buried heterostructure (BH). On the upper cladding layer 104 and
the upper blocking layer 106, an upper cladding layer 107 made of
p-InP and a contact layer 108 made of p-InGaAsP are laminated in
this order. On the top surface of the contact layer 108, a p-side
electrode 109 is formed, and on the back surface of the n-InP
substrate 101, an n-side electrode 110 is formed.
[0049] The equivalent refractive index in FIG. 2 indicates an
equivalent refractive index of the semiconductor layers at a
position with respect to the growth direction (vertical direction).
As shown in FIG. 2, in the semiconductor laser 10, an equivalent
refractive index na of a region including the active layer 103 is
higher than an equivalent refractive index nc at a side portion.
With such arrangement, an index waveguide structure is formed in a
width direction (horizontal direction) of the active layer 103.
[0050] FIG. 3 is a cross-sectional view taken along line A-A
showing a waveguide structure of the semiconductor laser 10 shown
in FIG. 2.
[0051] As shown in FIG. 3, on an output facet 112 in the optical
waveguide direction of the semiconductor laser 10, a low reflection
film 113 is formed. The low reflection film 113 has a reflectivity
in a range of 0.01% to 5%, and preferably a low reflectivity in a
range of 0.01% to 1% with respect to a wavelength of the laser
light. On a rear facet 114 opposite to the output facet 112, a high
reflection film 115 is formed. The high reflection film 115 has a
reflectivity in a range of 80% to 100%, and preferably a high
reflectivity in a range of 90% to 99%, with respect to the
wavelength of the laser light. The output facet 112 on which the
low reflection film 113 is formed and the rear facet 114 on which
the high reflection film 115 is formed make up a Fabry-Perot
resonator.
[0052] With such structure, light in the active layer 103 generated
by the application of the driving current oscillates by the effect
of optical amplification that the light receives while propagating
through the active layer 103 and the effect by the optical
resonator. The oscillated laser light is output as the laser light
LL via the low reflection film 113.
[0053] Next, a structure of the waveguide formed by the active
layer 103 will be specifically described. The waveguide formed by
the active layer 103 includes a first narrow portion 103a, a wide
portion 103c, a second narrow portion 103e, a first tapered portion
103b, and a second tapered portion 103d. The first narrow portion
103a, the wide portion 103c, and the second narrow portion 103e are
formed in this order from the rear facet 114 side so that each of
them has a uniform width. The wide portion 103c has a width larger
than the first narrow portion 103a. The second narrow portion 103e
has a width smaller than the wide portion 103c. The first tapered
portion 103b is formed between the first narrow portion 103a and
the wide portion 103c, and expands toward the wide portion 103c.
The second tapered portion 103d is formed between the wide portion
103c and the second narrow portion 103e, and narrows toward the
second narrow portion 103e.
[0054] The first narrow portion 103a has a width Wn1 and a length
Ln1. The wide portion 103c has a width Wb and a length Lb. The
second narrow portion 103e has a width Wn2 and a length Ln2. The
first tapered portion 103b has a length Lt1. The second tapered
portion 103d has a length Lt2. Each of the first and second tapered
portions 103b and 103d has a width same as each portion to be
connected thereto at a connecting portion. For instance, the first
tapered portion 103b has the same width as the first narrow portion
103a at the connecting portion with the first narrow portion 103a,
and has the same width as the wide portion 103c at the connecting
portion with the wide portion 103c.
[0055] The first narrow portion 103a has a function to ensure a
single-mode property in the waveguide mode of the waveguide by
filtering a higher-order waveguide mode that is now easy to occur
in the waveguide due to the width of the wide portion 103c being
large. In other words, even if the width of the wide portion 103c
is large to allow the higher-order waveguide mode, the first narrow
portion 103a does not allow the higher-order waveguide mode.
Accordingly, because the waveguide mode allowed in the overall
waveguide is only a fundamental mode, the waveguide has the
single-mode property
[0056] The first tapered portion 103b has a function to connect
between the first narrow portion 103a and the wide portion 103c
with low waveguide loss. The second tapered portion 103d has a
function to connect between the wide portion 103c and the second
narrow portion 103e with low waveguide loss.
[0057] An electric resistance of the wide portion 103c is reduced
due to the width of the waveguide being large, so that the wide
portion 103c has a function to increase the intensity of a
saturated optical power.
[0058] The second narrow portion 103e makes a far field pattern of
the output laser light LL approach an isotropic shape, so that the
second narrow portion 103e has a function of enabling the laser
light LL to couple to the optical fiber 12 with high efficiency by
the lens system 7.
[0059] FIG. 4 is a schematic view showing expansion and far field
patterns of laser lights output from the waveguides formed by the
active layer 103 in the semiconductor laser 10 according to the
first embodiment and by an active layer 1103 being a conventional
tapered waveguide structure. The active layer 1103 has the same
shape as the active layer 103 except for the portions shown in
broken lines. In addition, the laser lights output from the active
layers 1103 and 103 have beam sizes B1 and B2 in the width
direction (horizontal direction), respectively.
[0060] As shown in FIG. 4, in the case of the active layer 1103,
the width of the waveguide is large at an output edge of the laser
light, whereby expansion of the beam size B1 becomes small. On the
other hand, because the thickness of the active layer 1103 is
smaller than the width thereof, expansion of the beam size B2
becomes large in the vertical direction. Consequently, the beam
shape of the far field pattern of the laser light output from the
active layer 1103 becomes an ellipse.
[0061] Such situation in which the beam shape of the far field
pattern is an ellipse is a situation in which beam expansion in the
horizontal direction is different from beam expansion in the
vertical direction. Therefore, if the laser light is coupled to a
coupling target such as an optical fiber using a lens system
including a spherical lens, the coupling efficiency decreases. The
decrease of the coupling efficiency is reduced by using an
asymmetric lens. However, for instance, because tolerance of the
coupling efficiency of the asymmetric lens with respect to a value
of the FFP of the semiconductor laser is small, there are few
merits in using such asymmetric lens for fabricating a
semiconductor laser as an industrial product.
[0062] On the other hand, in the case of the active layer 103, the
beam expansion of the beam size B2 in the horizontal direction
becomes large due to the effect of the second narrow portion 103e.
Consequently, the beam shape of the far field pattern of the laser
light output from the active layer 103 approaches a circle.
Therefore, even when a lens system including the spherical lens is
used, the laser light can be coupled to the coupling target with
high efficiency.
[0063] Moreover, as described above, because the intensity of the
saturated optical power of the active layer 103 is increased by the
arrangement of the wide portion 103c, it is possible to couple the
high-intensity laser light LL to the optical fiber 12 with even
higher efficiency using the lens system 7. Consequently, it is
possible to output a higher-intensity laser light from the
semiconductor laser 10.
[0064] As described above, the semiconductor laser 10 according to
the first embodiment can output a high-intensity laser light via
the lens system 7, and the semiconductor laser module 100 including
the semiconductor laser 10 can also output a high-intensity laser
light from the optical fiber 12.
[0065] In the following, preferred structural parameters of the
waveguide (length, width, and so forth, of each portion) formed by
the active layer 103 in the semiconductor laser 10 according to the
first embodiment will be specifically described mainly based on
experimental data. In the following explanation, as shown in FIG.
5, a kink current (I.sub.kink) has a current value at which a kink
(inflection) is generated in a curve showing a current-optical
power characteristic of the semiconductor laser. The kink is one
factor that limits the maximum optical power. Therefore, the kinks
should be properly controlled in such high-power semiconductor
laser as in the present embodiment.
[0066] As shown in FIG. 6, the saturated optical power (P.sub.sat)
is a maximum value of an optical power of a semiconductor
laser.
[0067] In the following, explanation will be made while referring
to semiconductor lasers according to first and second comparative
examples as appropriate. FIG. 7A is a diagram showing a straight
waveguide structure of a waveguide S in a semiconductor device
according to the first comparative example. FIG. 7B is a diagram
showing a tapered waveguide structure of a waveguide T in a
semiconductor laser according to the second comparative example. In
both the first and second comparative examples, the semiconductor
lasers are made of the same material and have the same
cross-sectional structure as the semiconductor laser 10 according
to the first embodiment, and the central wavelength of laser lights
output from the semiconductor lasers is 1.48 .mu.m. As shown in
FIG. 7A, the width of the uniform-width waveguide S in the first
comparative example is referred to as a width WS. As shown in FIG.
7B, in the second comparative example, the waveguide T includes a
narrow portion Tn, a wide portion Tb, and a tapered portion Tt. The
narrow portion Tn and the wide portion Tb are formed in this order
so that each of them has a uniform width. The tapered portion Tt is
formed between the narrow portion Tn and the wide portion Tb, and
expands toward the wide portion Tb. The narrow portion Tn has a
width WTn and a length LTn. The wide portion Tb has a width WTb and
a length LTb. The tapered portion Tt has a length LTt. The
waveguide structure of the semiconductor laser according to the
first embodiment will be referred to as a barrel waveguide as
appropriate.
[0068] First, a preferred range of the entire length of the
waveguide formed by the active layer 103 will be described. As
shown in FIG. 3, in the first embodiment, the entire length of the
waveguide is equal to a cavity length of an optical resonator that
includes the output facet 112 and the rear facet 114. The entire
length of the waveguide is preferably equal to or longer than 1000
.mu.m to obtain a high saturated optical power and equal to or
shorter than 4000 .mu.m to obtain sufficient slope efficiency.
Especially, for instance, in a case of the high-power semiconductor
laser of which optical power from the optical fiber is equal to or
greater than 300 mW as in the first embodiment, the cavity length
is preferably equal to or longer than 1000 .mu.m.
[0069] Next, a preferred range of the length Ln1 of the first
narrow portion 103a will be described. FIG. 8 is a graph showing a
relationship between a ratio of the length Ln1 of the first narrow
portion 103a to the cavity length and the saturated optical power.
In FIG. 8, the cavity length is 2500 .mu.m. As for other structural
parameters, the length Lt1 is 300 .mu.m, the length Lt2 is 300
.mu.m, the length Ln2 is 30 .mu.m, the widths Wn1 and Wn2 are 3.0
.mu.m, and the width Wb is 5.0 .mu.m. A performance characteristic
is detected while changing the length Lb for each value of the
length Ln. In FIG. 8, a broken line is a guiding line.
[0070] As shown in FIG. 8, when the ratio of the length Ln1 to the
cavity length is increased from 10%, a filtering effect with
respect to a higher-order mode increases, whereby the saturated
optical power becomes larger. When the ratio becomes equal to or
greater than 30%, almost all the higher-order modes are removed.
Therefore, it is preferable that the ratio of the length Ln1 of the
first narrow portion 103a to the cavity length be equal to or
greater than 30%. Moreover, the ratio is preferably equal to or
less than 65%, for instance, to achieve sufficient effects of
reduction of electrical resistance and improvement of the saturated
optical power by the arrangement of the wide portion 103c. The
ratio of the wide portion 103c to the first narrow portion 103a in
the cavity length of the resonator significantly contributes to the
characteristics. Accordingly, the horizontal axis in FIG. 8
indicates the ratio instead of the value of the length Ln1.
[0071] A preferred range with respect to the length Ln2 of the
second narrow portion 103e and the length Lt2 of the second tapered
portion 103d will be described in detail later. Here, the reason
why the lengths Ln2 and Lt2 preferably smaller will be
described.
[0072] The lengths Ln2 and Lt2 are preferably smaller to achieve
sufficient effects of reduction of electrical resistance and
improvement of the saturated optical power by the arrangement of
the wide portion 103c. The length Ln2 is preferably equal to or
shorter than 200 .mu.m, and more preferably equal to or shorter
than 50 .mu.m, for example, equal to or shorter than 30 .mu.m.
[0073] It is preferable to further make the lengths Ln2 and Lt2
small because the distribution of the optical intensity in the
optical waveguide direction of the waveguide and the distribution
of carriers match more closely. More specifically, when a
Fabry-Perot resonator such as the semiconductor laser 10 is used,
the optical intensity of the waveguide in the optical waveguide
direction is distributed in such a way as to increase toward the
output facet from the rear facet as shown in FIG. 9. Therefore, as
the optical intensity increases, the number of necessary carriers
increases toward the output facet. In the case of the tapered
waveguide, especially near the output facet, the number of carriers
required based on an intrinsic optical intensity distribution of
the Fabry-Perot resonator can be supplied easier than in the case
of the straight waveguide, so that high power can be realized. The
reduction of electrical resistance caused by the wide portion 103c
also contributes to the achievement of high power. Due to the
arrangement of the second narrow portion 103e and the second
tapered portion 103d in front of the wide portion 103c, the light
having been amplified while propagating from the rear facet to the
output facet is confined to a narrow region, whereby supply of the
number of carriers required based on the optical intensity becomes
insufficient. Therefore, a phenomena leading to a kink such as a
hole-burning may easily occur. Accordingly, it is preferable that
the length Ln2 of the second narrow portion 103e, which is narrower
than the wide portion 103c and has a small number of carriers, and
the length Lt2 of the second tapered portion 103d be small because
unconformity between the distribution of the optical intensity and
the distribution of the carriers becomes smaller and thus
occurrence of the kink is suppressed.
[0074] The output facet 112 of the semiconductor laser 10 is
generally formed by cleaving the substrate after a laminated
structure of semiconductors and electrodes as shown in FIG. 2 are
formed on the substrate. Therefore, the length Ln2 is preferably
greater than the variations in positional accuracy of the cleavage
and equal to or greater than 10 .mu.m, for example.
[0075] Next, a preferred range of the length Lt1 of the first
tapered portion 103b will be described. For preventing a waveguide
loss caused by drastic expansion in the width of the waveguide, the
length Lt1 of the first tapered portion 103b is preferably equal to
or greater than 100 .mu.m, and for instance, 300 .mu.m. Moreover,
the length Lt1 is preferably equal to or shorter than 1000 .mu.m,
for instance, to achieve sufficient effects of reduction of
electrical resistance and improvement of the saturated optical
power by the arrangement of the wide portion 103c.
[0076] Next, preferred ranges of the width Wn1 of the first narrow
portion 103a, the width Wb of the wide portion 103c, and the width
Wn2 of the second narrow portion 103e will be described. For
reducing the electrical resistance of the first narrow portion
103a, the width Wn1 is preferably equal to or wider than 2.0 .mu.m,
and for instance 2.7 .mu.m. Moreover, the width Wn1 is preferably
equal to or narrower than 4.0 .mu.m to suppress the kink caused by
a higher-order waveguide mode. The width Wb is preferably equal to
or wider than 0.4 .mu.m, and particularly equal to or wider than
5.0 .mu.m, for achieving a sufficient effect of reduction of
electrical resistance by the arrangement of the wide portion 103c.
Furthermore, the width Wb is preferably equal to or narrower than
8.0 .mu.m, and particularly equal to or narrower than 0.6 .mu.m,
for suppressing occurrence of the kink. The width Wn2 is preferably
equal to or wider than 2.0 .mu.m, and particularly equal to or
wider than 2.5 .mu.m, for preventing reduction in the optical power
and the coupling efficiency. The width Wn2 can be 2.7 .mu.m, for
instance. Moreover, the width Wn2 is preferably equal to or
narrower than 5.0 .mu.m, and particularly equal to or narrower than
4.0 .mu.m, for preventing reduction in the coupling efficiency. A
preferred range of the width Wn2 of the second narrow portion 103e
will be described in further detail later.
[0077] Next, a preferred range of a difference .DELTA.W between the
width Wb of the wide portion 103c and the width Wn2 of the second
narrow portion 103e will be described. FIG. 10 is a graph showing a
relationship between the difference .DELTA.W between the widths and
a kink current. In FIG. 10, the cavity length is 2000 .mu.m. As for
other structural parameters, the length Ln1 is set to 750 .mu.m
that is 38% of the cavity length, the lengths Lt1 and Lt2 are set
to 300 .mu.m, the length Ln2 is set to 30 .mu.m, the length Lb is
set to 620 .mu.m, the width Wn1 is set to 2.7 .mu.m, the width Wn2
is changed in a range of 1.0 .mu.m to 5.0 .mu.m on a sample basis,
and the width Wb is set to 5.0 .mu.m or 6.0 .mu.m. Because the
maximum current value in the measurement is 2000 mA, if the kink
does not occur a data point of the kink current is plotted as 2000
mA. Therefore, when the kink current is 2000 mA, data points
overlap with one another in some cases, however, the number of
sampling for each difference .DELTA.W is set to be at least three.
In FIG. 10, the broken line is a guiding line.
[0078] When the difference .DELTA.W becomes greater, mismatch of
the waveguide mode between the wide portion 103c and the second
narrow portion 103e becomes greater. This may produce a kink. As
shown in FIG. 10, when the difference .DELTA.W is 4 .mu.m, the kink
current becomes less than 1800 mA in some cases, which is a level
causing no practical problem. On the other hand, when the
difference .DELTA.W is equal to or less than 3.3 .mu.m, especially
equal to or less than 2.5 .mu.m, the kink current becomes equal to
or greater than 1800 mA more reliably, which is preferable.
Moreover, the difference .DELTA.W is preferably equal to or greater
than 1.0 .mu.m for achieving a sufficient effect of the formation
of the second narrow portion 103e.
[0079] Next, a preferred range of an inclination angle .theta. in a
case where a degree of narrowing of the second tapered portion 103d
toward the second narrow portion 103e is shown by the inclination
angle .theta. shown in FIG. 1 will be described. The inclination
angle .theta. is expressed as arctan [(.DELTA.W/2)/Lt2]. When the
inclination angle .theta. is larger, the state of the waveguide
becomes abnormal due to drastic reduction in the width of the
waveguide, which results in causing deformation in the far field
pattern of the output laser light and a kink.
[0080] FIG. 11 is a graph showing a relationship between the
inclination angle .theta. and an angle of the far field pattern
(FFPh) in the horizontal direction. In FIG. 11, the cavity length
is 2000 .mu.m. As for other structural parameters, the length Ln1
is set to 750 .mu.m that is 38% of the cavity length, the length
Lt1 is set to 300 .mu.m, the length Ln2 is set to 30 .mu.m, the
length Lt2 is set to 50 .mu.m, 100 .mu.m or 300 .mu.m, the width
Wn1 is set to 2.7 .mu.m, the width Wn2 is changed in a range of 1.0
.mu.m to 4.0 .mu.m on a sample basis, the width Wb is set to 5.0
.mu.m or 6.0 .mu.m, and the difference .DELTA.W is changed in a
range of 1.0 .mu.m to 5.0 .mu.m on a sample basis.
[0081] In FIG. 11, the data point group G shows the FFPh in the
first comparative example being the straight waveguide assuming
that a value of the inclination angle .theta. is zero. The cavity
length of the waveguide S (see FIG. 7A) of the first comparative
example is set to 2000 .mu.m, and the width WS of the waveguide is
changed in a range of 2.0 .mu.m to 4.0 .mu.m on a sample basis.
This is within the range of the width Wn2 of the barrel waveguide
shown in FIG. 11. In FIG. 11, a broken line is a guiding line.
[0082] As shown in FIG. 11, the average value of the FFPh of the
data point group G that is data of the first comparative example is
approximately 12 degrees. Because there is no drastic change in the
width of the waveguide in the case of the first comparative
example, when the FFPh is 12 degrees, it is possible to assume that
no deformation has occurred in the FFPh.
[0083] On the other hand, in the case of the first embodiment, when
the inclination angle .theta. becomes greater, the average value
becomes greater due to the deformation of the FFPh. When the
inclination angle .theta. is in a range of 0 degree to 0.48
degrees, a center value of the FFPh is 12 degrees, and values of
all points of the FFPh are equal to or less than 13 degrees.
Accordingly, when the FFPh becomes greater than 12 degrees by 1
degree or more, the state of the waveguide is considered abnormal.
When the inclination angle .theta. is 0.57 degrees, it is found
that some FFPhs are equal to or less than 13 degrees. Furthermore,
it is found from the guiding line that when the inclination angle
.theta. is equal to or less than 0.6 degrees, the FFPh can become
equal to or less than 13 degrees. Based on the above description,
it is preferable that the inclination angle .theta. be equal to or
less than 0.6 degrees, more preferably equal to or less than 0.57
degrees, and even more preferably equal to or less than 0.48
degrees because occurrence of deformation in the FFPh can be
suppressed and thus the coupling efficiency of the laser light with
the coupling target is be reduced.
[0084] Next, a preferred range of the length Lt2 of the second
tapered portion 103d will be described. FIG. 12 is a graph showing
a calculation value of a relationship between the length Lt2 of the
second tapered portion 103d and the inclination angle .theta. in
upper and lower limits (1.0 .mu.m and 3.3 .mu.m) of a preferred
difference .DELTA.W. If a condition in which the difference
.DELTA.W is within the range of 1.0 .mu.m to 3.3 .mu.m and a
condition in which the inclination angle .theta. is equal to or
less than 0.6 degrees are both satisfied, occurrence of the kink
can be further suppressed based on the reasons described above,
which is particularly a preferable status. As shown in FIG. 12,
when the length Lt2 is shorter than 50 .mu.m, it is not possible to
satisfy both of the two conditions at the same time. Therefore, it
is particularly preferable that the length Lt2 be equal to or
longer than 50 .mu.m. The length Lt2 equal to or longer than 150
.mu.m is further preferable because it can reliably satisfy the two
conditions. For instance, the length Lt2 is 300 .mu.m, which is
preferably equal to or shorter than 400 .mu.m. The length Lt2 is
preferably as small as possible, for instance, about 100 .mu.m, to
achieve sufficient effects of reduction of electrical resistance
and improvement of the saturated optical power by the arrangement
of the wide portion 103c and to reduce the above-described
unconformity between the distribution of the optical intensity and
the distribution of the carriers. In the case where the length Lt2
is set within the range of 50 .mu.m to 150 .mu.m as described
above, if attention is only focused on the condition in which the
difference .DELTA.W is within the range of 1.0 .mu.m to 3.3 .mu.m,
the inclination angle .theta. largely deviates from 0.6 degrees, so
that the length Lt2 is more preferably set to satisfy both
conditions of the difference .DELTA.W and the inclination angle
.theta..
[0085] As described above, the length Lt2 is preferably within the
range of about 50 .mu.m to 400 .mu.m. If the length Lt2 is large
within the preferable range, instability of the waveguide mode
caused by the drastic change of the width of the waveguide can be
further suppressed. If the length Lt2 is small within the
preferable range, the electrical resistance can be further reduced
and the unconformity between the distribution of the optical
intensity and the distribution of the carriers can be further
suppressed.
[0086] In the first embodiment, the width of the waveguide changes
linearly in both the first tapered portion 103b and the second
tapered portion 103d along the optical waveguide direction.
However, the first tapered portion 103b and the second tapered
portion 103d are not limited to such shapes. As long as they are
capable of connecting the first narrow portion 103a, the wide
portion 103c, and the second narrow portion 103e smoothly, the
width of the waveguide can change, for instance, exponentially or
in any other changing manners. However, the width of the waveguide
preferably changes in a monotonically increasing or decreasing
manner. Here, even if the changing manner of the width of the
waveguide of the second tapered portion 103d is not linear, the
value of the inclination angle .theta. is defined in the same way
as in the case of the above-described linear changing manner. In
other words, an angle formed by connecting the edges of the wide
portion 103c and the second narrow portion 103e with straight lines
is defined as the inclination angle .theta..
[0087] Next, the preferred range of the width Wn2 of the second
narrow portion 103e will be described in more detail. FIG. 13 is a
graph showing a relationship between the width of the second narrow
portion and an optical power in a case where a driving current is
1800 mA in the first embodiment and the first and second
comparative examples. FIG. 13 also shows values of the difference
.DELTA.W in the first embodiment. A thin solid line in FIG. 13 is a
guiding line of data points in the first embodiment.
[0088] In FIG. 13, the cavity length is 2000 .mu.m. As for other
structural parameters, the length Ln1 is set to 750 .mu.m that is
38% of the cavity length, the length Lt1 is set to 300 .mu.m, the
length Ln2 is set to 30 .mu.m, the length Lt2 is set to 50 .mu.m,
100 .mu.m or 300 .mu.m, the width Wn1 is set to 2.7 .mu.m, the
width Wn2 is changed in a range of 0.6 .mu.m to 4.8 .mu.m on a
sample basis, and the width Wb is set to 5.0 .mu.m.
[0089] The cavity length of the waveguide S (see FIG. 7A) of the
first comparative example is set to 2000 .mu.m, and the width WS of
the waveguide is set to 2.7 .mu.m. The cavity length of the
waveguide T (see FIG. 7B) of the second comparative example is set
to 2000 .mu.m, the length LTn of the narrow portion Tn is set to
750 .mu.m that is 38% of the cavity length, the length LTt of the
tapered portion Tt is set to 300 .mu.m, the length LTb of the wide
portion Tb is set to 950 .mu.m, the width WTn1 of the narrow
portion Tn is set to 2.7 .mu.m, and the width Wtb of the wide
portion Tb is set to 5.0 .mu.m.
[0090] As shown in FIG. 13, an optical power in the second
comparative example being the tapered waveguide is higher than an
optical power in the first comparative example being the straight
waveguide. On the other hand, as for the first embodiment, when the
width Wn2 is equal to or wider than 2.7 .mu.m, it is possible to
obtain an optical power similar to that in the second comparative
example. Therefore, the width Wn2 of equal to or wider than 2.7
.mu.m is preferable. The optical power decreases as the width Wn2
becomes narrower. When the width Wn2 is equal to or narrower than 1
.mu.m, there are cases in that the optical power becomes less than
that in the first comparative example. When the width Wn2 is 0.6
.mu.m, the optical power is averagely similar to that in the first
comparative example. It is considered that decrease of the optical
power is due to the occurrence of the kink. As is obvious from FIG.
13, the difference .DELTA.W of equal to or less than 3.3 .mu.m is
preferable because occurrence of the kink can be suppressed as
described above and thus it is possible to obtain a high optical
power similar to that in the second comparative example.
[0091] Next, referring to FIGS. 14 to 19, a preferred range of the
width Wn2 of the second narrow portion 103e in terms of a point of
the coupling efficiency between the laser light and the optical
fiber 12 will be described using calculation results and
experimental data. The coupling efficiency shown below is for a
case where both the first lens 7a and the second lens 7b in the
lens system 7 as a double-lens system are spherical lenses.
[0092] In the following, description will be given on two cases in
which structures of the active layers 103 (a laser structure X and
a laser structure Y) are different. In the laser structure X, a
quantum well layer has a three-layer structure, the thickness of
the active layer 103 is 0.129 .mu.m, and an equivalent
refractive-index difference .DELTA.n (=na-nc) is 0.004. In the
laser structure Y, a quantum well layer has a five-layer structure,
the thickness of the active layer 103 is 0.141 .mu.m, and the
equivalent refractive-index difference .DELTA.n is 0.01.
[0093] FIGS. 14 to 16 show calculation results. In the calculation,
the structure of the active layer 103 and a width of an output
facet are considered. FIGS. 14 to 16 show calculation values of
relationships between the width Wn2 of the second narrow portion
103e and the FFP. When the semiconductor laser operates normally,
the FFP depends on the width of the waveguide of the output facet
in either case of the barrel waveguide such as the first embodiment
or the straight waveguide (a region in which the inclination angle
is greater than 0.6 degrees as shown in FIG. 12 is abnormal). In
FIGS. 14 to 16, 18 and 19, the horizontal axis is shown as the
width Wn2 of the second narrow portion 103e, which is for the case
of the barrel waveguide according to the first embodiment and shows
the width of the waveguide at the portion in contact with the
output facet. Accordingly, the horizontal axis shows the width WS
of the waveguide in the case of the straight waveguide, and the
width WTb of the waveguide of the wide portion in the case of the
tapered waveguide.
[0094] FIG. 14 is a graph showing a relationship between the width
Wn2 of the second narrow portion 103e and the FFPh. FIG. 15 is a
graph showing a relationship between the width Wn2 of the second
narrow portion 103e and an angle of the far field pattern (FFPv) in
the vertical direction. FIG. 16 is a graph showing a relationship
between the width Wn2 of the second narrow portion 103e and a ratio
of the FFPv to the FFPh (FFPv/FFPh).
[0095] As shown in FIGS. 14 to 16, the FFPh changes to have a local
maximum value along with the change of the width Wn2. On the other
hand, the FFPv increases monotonically along with the increase of
the width Wn2. Consequently, the FFPv/FFPh changes to have a local
minimum value along with the change of the width Wn2.
[0096] FIG. 17 is a graph showing a relationship between the
FFPv/FFPh and the coupling efficiency with respect to the optical
fiber. Each data point in FIG. 17 is data obtained by experiment,
and a solid line is an approximate straight line calculated by a
least square method with respect to the data points. As is obvious
from FIG. 17, as the FFPv/FFPh approaches one, the coupling
efficiency becomes greater. The FFPv/FFPh being one means that a
beam shape of the emitted light is a circle.
[0097] A region R shown by hatched lines shows a region where
experimental data of the semiconductor laser having the waveguide S
(width WS is 2 .mu.m to 3.5 .mu.m) of the straight waveguide
according to the first comparative example is distributed. As shown
in FIG. 17, because the region R contains a lot of data, the region
R includes influences of variations of the lens and the
semiconductor laser. However, if the coupling efficiency is around
85% or greater, the coupling efficiency can be deemed as being
similar to the waveguide S of the straight waveguide according to
the first comparative example having a conventional structure.
[0098] FIG. 18 is a graph showing a relationship between the width
Wn2 of the second narrow portion 103e and the coupling efficiency
calculated from a combination of the data shown in FIG. 16 and the
data of the approximate straight line shown in FIG. 17. As shown in
FIG. 18, the width Wn2 is preferably in a range of 2.0 .mu.m to 5.0
.mu.m because the coupling efficiency becomes 85% or greater in the
case of either the laser structure X or Y.
[0099] In a case of applying the laser structure Y, a case where
the width WTb of the wide portion Tb of the tapered waveguide
according to the second comparative example is 0.6 .mu.m (i.e., a
case where a value of the horizontal axis in FIG. 18 is 6.0 .mu.m)
and a case where the width Wn2 of the narrow second portion 103e in
the first embodiment is 2.5 .mu.m are compared based on FIG. 18,
for instance. In such cases, the coupling efficiency in the second
comparative example is 83.5%, and the coupling efficiency in the
first embodiment is 87.5%. Therefore, it is possible to confirm
that the first embodiment can improve the coupling efficiency by
4%.
[0100] The above-mentioned coupling efficiency is a coupling
efficiency in the case where the lens system 7 is a double-lens
system with spherical lenses. However, in other cases where a
different lens system is used, the relationship between the width
Wn2 of the second narrow portion 103e and the coupling efficiency
exhibits approximately the same tendency as in the case of using
the double-lens system. Therefore, the Wn2 is preferably within the
range of 2.0 .mu.m to 5.0 .mu.m.
[0101] In FIG. 14, for instance, the value of the width Wn2 of the
second narrow portion 103e at a time when the FFPh becomes a
maximum value is approximately the upper limit of a width for
cutting off the higher-order waveguide mode. If the width Wn2
becomes wider than this value by about 1 .mu.m, the higher-order
waveguide mode is considered to become more evident. As shown in
FIG. 14, a border value above which the higher-order waveguide mode
starts becoming evident is 4.5 (=3.5+1) .mu.m in the case of the
laser structure X, and 3.5 (=2.5+1) .mu.m in the case of the laser
structure Y.
[0102] Therefore, when the straight waveguide is used for the
semiconductor laser, the width Wn2 is designed to be smaller than
the above-described width. However, as is obvious from the
descriptions of FIGS. 10 and 13, it is found that a semiconductor
laser having the width Wb in a range of 5.0 .mu.m to 6.0 .mu.m can
be realized with the barrel waveguide or the tapered waveguide,
which cannot be realized with the normal straight waveguide. Such
tendency is due to the filtering effect of the first narrow portion
103a.
[0103] As shown in FIG. 18, between the laser structures X and Y,
the coupling efficiency is greater in the case of the lase
structure Y. However, the upper limit of the width of the waveguide
for cutting off the higher-order waveguide mode is wider in the
case of the laser structure X. Accordingly, as for the widths Wn1
and Wb having large influence over the resistance, the laser
structure X allows wider widths Wn1 and Wb than the laser structure
Y. Therefore, in order to improve the optical power of the
semiconductor laser without considering the coupling efficiency,
the laser structure X is more effective than the laser structure
Y.
[0104] In FIG. 18, when the width Wn2 with which the coupling
efficiency is maximized is selected in each of the laser structures
X and Y, a difference between the coupling efficiencies in the two
laser structures becomes about 1%. Accordingly, if it is possible
to increase the optical power of the semiconductor laser high
enough to resolve such difference between the coupling
efficiencies, the laser structure X is more effective than the
laser structure Y even if the difference between the coupling
efficiencies is considered. Moreover, when the width Wb of the wide
portion 103c and the width Wn1 of the first narrow portion 103a are
set to be the same in both the laser structure X and the laser
structure Y, the laser structure X is more preferable than the
laser structure Y because the laser structure X can further
suppress occurrence of the kink.
[0105] The number of layers in the quantum well layer of the active
layer in the SCH-MQW structure is not particularly limited.
However, it is preferable that the number of layers be equal to or
less than three.
[0106] In the BH structure, the difference .DELTA.n is generally
large and is about 0.002<.DELTA.n<0.02.
[0107] Some semiconductor lasers have a larger difference .DELTA.n
in a range of about 0.10 to 0.20. Such value of .DELTA.n is
different from the value of .DELTA.n assumed in the present
invention by a factor of about 10 or more. Therefore, there may be
cases in which the behavior of the optical waveguide becomes
different from the tendency having been described in this
explanation. The semiconductor laser adopting a larger difference
.DELTA.n enhances the effect of optical confinement by such large
difference .DELTA.n and thus aims at achieving a low threshold
current. For example, in the semiconductor laser aiming at high
power equal to or greater than 300 mW from the optical fiber as in
the first embodiment, the difference .DELTA.n such as in a range of
0.10 to 0.20 is not preferable. This is because the influence of
optical absorption due to the optical confinement becomes more
evident. Here, aiming to the achievement of high power and a low
threshold current as mentioned above indicates that one of them is
valued more than the other, and it is needless to say that even in
a high-power semiconductor laser, having a low threshold current is
more preferable.
[0108] When the semiconductor laser has a BH structure while the
difference .DELTA.n is approximately in a range of 0.002 to 0.02
and the waveguide is the straight waveguide, the value of FFPv/FFPh
is approximately in a range of 1.1 to 1.6. In this case, a beam
shape emitted from the semiconductor laser is relatively close to a
circle. Therefore, a spherical lens is often used for a lens
system. The first embodiment provides a semiconductor laser
specifically preferable for the use of a lens system designed to
execute lens coupling using a spherical lens with respect to the
semiconductor laser having a straight waveguide from which the beam
emitted is originally relatively close to a circle. By adopting the
tapered waveguide for high power, the value of FFPv/FFPh increases,
and as a result, the coupling efficiency decreases. However, by
applying the second tapered portion 103d and the second narrow
portion 103e, it is possible to obtain effects that the value of
FFPv/FFPh and the coupling efficiency come closer to those of the
straight waveguide. Therefore, it is preferable because high power
and an excellent coupling efficiency can be obtained at once.
[0109] Moreover, even if the semiconductor laser does not have the
BH structure, it is preferable for coupling the laser light to the
optical fiber using a spherical lens system as long as the
difference .DELTA.n and the value of FFPv/FFPh are within the
above-described ranges.
[0110] In the first embodiment, the lens system is a double-lens
system. However, the lens system is not limited to the double-lens
system, while a single-lens system or an optical fiber with its end
being formed into a lens to serve as a lens system can also be
applied. In the case of using the lens system obtained by
processing the end of the optical fiber into a lens, it is
preferable to use a so called hemispherically-ended fiber obtained
by processing the end of the optical fiber into a shape close to a
spherical lens.
[0111] In the first embodiment, although the waveguide structure of
the semiconductor laser is the BH structure, the waveguide
structure is not limited to such BH structure, and other waveguide
structures such as a ridge waveguide can also be applied. When the
semiconductor laser has the ridge waveguide, the width of the
waveguide is defined as a width of the ridge.
[0112] When the semiconductor laser is a ridge waveguide type, or
an SAS (self-aligned structure) type, the difference .DELTA.n in a
width direction becomes approximately equal to or less than 0.002,
whereby an optical confinement in the width direction becomes weak.
In this case, the value of FFPv/FFPh often becomes approximately
two to four. Therefore, an asymmetric lens or a CLF (cylindrical
lensed fiber) with its end being processed into a cylindrical lens
is often used as the lens system.
[0113] However, even if the semiconductor laser has such structure
of which value of FFPv/FFPh is large, in a case where a tapered
waveguide such as the one in the second comparative example is
applied to the active layer, if the lens system designed for the
semiconductor laser of which active layer has a straight waveguide
such as the one in the conventional comparative example is applied
without any change, the coupling efficiency decreases. On the other
hand, by adopting the barrel waveguide structure to the active
layer as in the first embodiment, it is possible to fabricate the
product with high coupling efficiency even by using the lens system
designed for the conventional straight waveguide.
[0114] FIG. 19 is a graph showing a relationship between the width
of the second narrow portion and the optical power (i.e., optical
power from the optical fiber) after being coupled to the optical
fiber when the driving current is 1800 mA in the cases of the first
embodiment and the first and second comparative examples. The
relationship is calculated by applying the calculation results
shown in FIG. 18 to the experimental data shown in FIG. 13. In FIG.
19, a value of the difference .DELTA.W in the case of the first
embodiment is also shown. A thin solid line in FIG. 19 is a guiding
line of data points in the first embodiment.
[0115] As for the optical power shown in FIG. 13, when the width
Wn2 is equal to or wider than 2.7 .mu.m in the first embodiment,
the optical power similar to the second comparative example is
obtained. On the other hand, as for the optical power after the
optical coupling shown in FIG. 19, in the case of the first
embodiment, it is found that an optical power greater than that of
the second comparative example can be obtained due to improvement
of the coupling efficiency. When focusing on the horizontal axis in
the upper side of the drawing, the difference .DELTA.W is
preferably within the range of 1.0 .mu.m to 2.5 .mu.m because the
increased amount of the optical power in the first embodiment with
respect to the second comparative example averagely becomes equal
to or greater than 10 mW.
[0116] Next, in order to find out the influence of the second
tapered portion 103d and the second narrow portion 103e on the
waveguide mode, a waveguide state of the light is calculated by a
BPM (beam propagation method) under the conditions that the width
Wn2 is 2.7 .mu.m, the width Wb is 6.0 .mu.m, and the length Ln2 is
400 .mu.m. The length Lt2 is changed from 30 .mu.m to 450 .mu.m.
The purpose of this calculation is to find out the influence of the
second tapered portion 103d and the second narrow portion 103e on
the waveguide mode, so that the structure on the rear facet side
ranging from a part of the wide portion 103c to the first narrow
portion 103a will be omitted in the calculation. In order to find
out the state, the length Ln2 is set to be large such as 400
.mu.m.
[0117] As a result of the calculation, an interference phenomenon
in which parts with weak light intensities appear at approximately
equal intervals in the cavity length direction inside the second
narrow portion 103e is detected. The calculation result exhibits
that the parts in which distribution of optical intensity is
deformed by weakening of the optical intensity appeare at intervals
of about 30 .mu.m, and the deformation converges gradually as
coming closer to the output facet. Such phenomenon is considered to
occur as a result of interference between a radiation mode and a
waveguide mode having occurred in the second tapered portion 103d.
It can be predicted that the deformation of the FFPh shown in FIG.
11 has occurred due to such interference.
[0118] It is found for the first time by the inventor's detailed
study that because the interference phenomenon gradually becomes
weak as reaching closer to the output facet as described above, the
second narrow portion 103e needs to be long to the degree that the
interference phenomenon converges to obtain an emission light
unaffected by the interference phenomenon.
[0119] Accordingly, by designing the waveguide while considering
such interference phenomenon to form a waveguide with which the
interference phenomenon is prevented, it is possible to obtain
excellent optical coupling without deformation in the FFPh of the
emission light as shown in FIG. 11. The deformation in the
distribution of the optical intensity occurs periodically only at a
part inside the second narrow portion 103e, so that it is also
considered to obtain an excellent FFP by arranging the second
narrow portion 103e so that an undeformed part in the FFP
corresponds to the output facet thereof without making the second
narrow portion 103e long enough for the interference phenomenon to
converge. However, such waveguide design is not preferable because
an excellent FFP cannot be obtained in some cases when the length
of the second narrow portion 103e is changed due to variations in
positional accuracy of the facet cleavage that are about 10 .mu.m
at the maximum.
[0120] FIG. 20 is a graph showing the length Ln2 necessary for
reducing the interference phenomenon in a case where the length Lt2
is changed in the above calculation. As is obvious from FIG. 20,
when the influence of the radiation mode is greater, the length Ln2
necessary for removing the interference phenomenon becomes larger.
On the other hand, when the length Lt2 is relatively as large as
300 .mu.m or more, the length Ln2 can be 0 .mu.m, and the second
narrow portion 103e can be omitted. However, even in such a case,
it is more preferable that the second narrow portion 103e of the
length of the accuracy of the cleavage, e.g. approximately 10
.mu.m, is arranged for suppressing the variation of the width of
the output facet.
[0121] Because the interference phenomenon can be considered as a
phenomenon between the radiation mode and the waveguide mode, more
physically, the necessary length Ln2 is determined based on the
inclination angle .theta. instead of the length Lt2 of the second
tapered portion 103d.
[0122] FIG. 21 is a graph showing a case where a horizontal axis in
FIG. 20 represents the inclination angle .theta..
[0123] As is obvious from FIG. 21, a preferred range of the length
Ln2 becomes a range shown in the following formulas (1) to (4).
Ln2.gtoreq.106.theta.-0.00681 (provided that
0.47<.theta..ltoreq.0.60) (1)
Ln2.gtoreq.317.theta.-100 (provided that
0.32<.theta..ltoreq.0.47) (2)
Ln2.gtoreq.0 (provided that .theta..ltoreq.0.32) (3)
[0124] Here, .theta..ltoreq.0.60 is determined based on FIG.
11.
[0125] FIGS. 20 and 21 are graphs in which the following data is
plotted.
[0126] (Lt2, Ln2, .theta.)=(30, 200, 3.15) [0127] (50, 150, 1.89)
[0128] (100, 100, 0.95) [0129] (200, 50, 0.47) [0130] (300, 0,
0.32) [0131] (350, 0, 0.27) [0132] (400, 0, 0.24) [0133] (450, 0,
0.21)
[0134] The formula (1) shows a straight line connecting the points
of (Lt2, Ln2)=(100, 100) and (Lt2, Ln2)=(200, 50) in the range of
0.47<.theta..ltoreq.0.60. The formula (2) shows a straight line
connecting the points of (Lt2, Ln2)=(200, 50) and (Lt2, Ln2)=(300,
0) in the range of 0.32<.theta..ltoreq.0.47.
[0135] FIG. 22 is a graph showing a relationship between the
inclination angle and an area of the waveguide. FIG. 23 is a graph
showing a relationship between the lengths Lt2 and the area of the
waveguide. The following values are used for parameters other than
the lengths Lt2 and Ln2 for calculating the areas in FIGS. 22 and
23. Specifically, the cavity length is set to 2000 .mu.m, the width
Wn1 and the width Wn2 are set to 2.7 .mu.m, the width Wb is set to
6 .mu.m, the length Lt1 is set to 300 .mu.m, and the length Ln1 is
set to 750 .mu.m. Because the value of the area changes depending
on a value of each of the above parameters, for further
generalization, vertical axes in FIGS. 22 and 23 are represent the
ratio with respect to the maximum area within the calculated
conditions.
[0136] When the length Lt2 is small, the length Ln2 needs to be
large. When the length Ln2 is small, the length Lt2 needs to be
large. As is obvious from FIGS. 22 and 23, the area of the
waveguide becomes small whether the length Lt2 is too small or too
large.
[0137] As described above, the saturated optical power becomes
small when the area of the waveguide is small. This is not
preferable for achieving high power. As is evident in FIG. 23, the
length Lt2 is preferably designed to be equal to or shorter than
400 .mu.m as a guide so that the area of the waveguide becomes 98%
or greater of the maximum area because the area does not become too
small. It is further preferable that the length Lt2 be designed to
be equal to or shorter than 350 .mu.m so that the area becomes 99%
or greater of the maximum area.
[0138] If the lengths Lt2 and Ln2 become too long, the unconformity
between the distribution of the optical intensity and the
distribution of the carriers is encouraged as described above,
which is not preferable.
[0139] As having been proved by the inventors for the first time,
if the inclination angle .theta. is not set appropriately, when the
length Ln2 is set to 0 .mu.m, it is expected that instability of
the waveguide mode appears. In other words, the length Ln2 of 0
.mu.m is allowed only in a limited state in terms of the area and
the inclination angle, and thus it is necessary to design the
length Ln2 appropriately within the range found by the inventors of
the present invention.
[0140] Next, a semiconductor laser according to a second embodiment
of the present invention will be described. The semiconductor laser
according to the second embodiment has the same laminated structure
as the semiconductor laser according to the first embodiment.
However, a shape in the width direction along the optical waveguide
direction of the active layer in the second embodiment is different
from that of the first embodiment. In the following, this
difference will be mainly described.
[0141] FIG. 24 is a cross-sectional view showing a waveguide
structure of the semiconductor laser according to the second
embodiment, and is contrasted with FIG. 3.
[0142] As shown in FIG. 24, a semiconductor laser 20 includes an
active layer 203, a lower blocking layer, and an upper blocking
layer 205 similarly to the semiconductor laser 10. The lower
blocking layer is made of p-InP. The upper blocking layer 205 is
made of n-InP. The lower blocking layer and the upper blocking
layer 205 are arranged on both sides of the active layer 203. An
low reflection film (not shown) and a high reflection film (not
shown) are formed on an output facet 212 and a rear facet 214
opposite to the output facet 212 in the optical waveguide direction
of the semiconductor laser 20, respectively. The output facet on
which the low reflection film is formed and the rear facet on which
the high reflection film is formed make up a Fabry-Perot
resonator.
[0143] The active layer 203 includes a first narrow portion 203a, a
wide portion 203c, a second narrow portion 203e, a first tapered
portion 203b, and a second tapered portion 203d. The first narrow
portion 203a, the wide portion 203c, and the second narrow portion
203e are formed in this order from the rear facet 214 side so that
each of them has a uniform width. The wide portion 203c has a width
larger than the first narrow portion 203a. The second narrow
portion 203e has a width smaller than the wide portion 203c. The
first tapered portion 203b is formed between the first narrow
portion 203a and the wide portion 203c, and expands toward the wide
portion 203c. The second tapered portion 203d is formed between the
wide portion 203c and the second narrow portion 203e, and narrows
toward the second narrow portion 203e.
[0144] The active layer 203 further includes a third narrow portion
203f and a third tapered portion 203g. The third narrow portion
203f is formed on the rear facet 214 side to have a uniform width
approximately the same as the second narrow portion 203e. The third
tapered portion 203g is formed between the third narrow portion
203f and the first narrow portion 203a, and narrows toward the
first narrow portion 203a. The third tapered portion 203g has a
function to connect the third narrow portion 203f and the first
narrow portion 203a under the condition of a low waveguide
loss.
[0145] Next, a function of the third narrow portion 203f will be
described. Generally, in fabricating the semiconductor laser 20,
after a plurality of semiconductor lasers is formed simultaneously
on a substrate, the substrate is cleaved to separate the
semiconductor lasers into individual chips. Therefore, when the
waveguide structure on the substrate is viewed from above, patterns
of the active layer 203 are formed continuously on the substrate as
shown in FIG. 25. In this case, supposing that the first narrow
portion 203a and the second narrow portion 203e are directly
connected between any adjacent active layers 203, when a position
CP for cleaving is misaligned, a part of the second narrow portion
203e with a narrow width remains at a rear edge of the first narrow
portion 203a or a part of the first narrow portion 203a with a wide
width remains at a front edge of the second narrow portion 203e,
which results in generating a step in the waveguide of the active
layer 203, so that characteristics of the fabricated semiconductor
laser 20 may deviate from the designed values.
[0146] On the contrary, in the semiconductor laser 20 in the second
embodiment, because the third narrow portion 203f with
approximately the same width as the second narrow portion 203e is
formed on the rear facet 214 side, even if the position CP for
cleaving is misaligned, a step is not generated at the front edge
of the second narrow portion 203e or the rear edge of the third
narrow portion 203f.
[0147] The length of the third narrow portion 203f is preferably
longer than the variations in positional accuracy of the cleavage,
and is, for instance, equal to or longer than 10 .mu.m. The length
of the third narrow portion 203f is preferably 50 .mu.m. Moreover,
the length of the third tapered portion 203g can also be 50 .mu.m,
for instance.
[0148] Next, a semiconductor laser according to a third embodiment
of the present invention will be described. The semiconductor laser
according to the third embodiment has the same laminated structure
and the same shape in the width direction along the optical
waveguide direction of the active layer as the semiconductor laser
according to the first embodiment, however, is different in that
the semiconductor laser according to the third embodiment has a
current non-injection structure. Accordingly, in the following,
such difference will be mainly described.
[0149] FIG. 26 is a cross-sectional view showing a waveguide
structure of the semiconductor laser according to the third
embodiment, and is contrasted with FIG. 3.
[0150] As shown in FIG. 26, a semiconductor laser 30 includes an
active layer 303, a lower blocking layer, and an upper blocking
layer 305 similarly to the semiconductor laser 10. The lower
blocking layer is made of p-InP. The upper blocking layer 305 is
made of n-InP. The lower blocking layer and the upper blocking
layer 305 are arranged on both sides of the active layer 303. An
low reflection film (not shown) and a high reflection film (not
shown) are formed on an output facet 312 and a rear facet 314
opposite to the output facet 312 in the optical waveguide direction
of the semiconductor laser 30, respectively. The output facet on
which the low reflection film is formed and the rear facet on which
the high reflection film is formed make up a Fabry-Perot
resonator.
[0151] Similarly to the active layer 103 of the semiconductor laser
10, the active layer 303 includes a first narrow portion 303a, a
wide portion 303c, a second narrow portion 303e, a first tapered
portion 303b, and a second tapered portion 303d. The first narrow
portion 303a, the wide portion 303c and the second narrow portion
303e are formed in this order from the rear facet 314 side so that
each of them has a uniform width. The wide portion 303c has a width
larger than the first narrow portion 303a. The second narrow
portion 303e has a width smaller than the wide portion 303c. The
first tapered portion 303b is formed between the first narrow
portion 303a and the wide portion 303c, and expands toward the wide
portion 303c. The second tapered portion 303d is formed between the
wide portion 303c and the second narrow portion 303e, and narrows
toward the second narrow portion 303e.
[0152] The semiconductor laser 30 includes a current non-injection
layer 316 as a current non-injection structure that is formed on
the upper side of the active layer 303 to cover the second narrow
portion 303e and the second tapered portion 303d. With the current
non-injection layer 316, current is prevented from flowing into the
second narrow portion 303e and the second tapered portion 303d,
whereby unconformity that can be generated between the distribution
of the optical intensity and the distribution of the carriers is
resolved, and occurrence of a kink and reduction of the saturated
optical power are suppressed.
[0153] The current non-injection layer 316 is realized by forming
an n-type semiconductor layer made of n-InP, a dielectric layer
made of SiN, or the like, for instance, between the contact layer
and the p-side electrode (see FIG. 2). However, the current
non-injection layer 316 is not specifically limited to such
structure as long as the structure can render a non-flow state of
electrical current.
[0154] In the third embodiment, the current non-injection layer 316
is formed to cover the second narrow portion 303e and the second
tapered portion 303d. However, it is also acceptable that the
current non-injection layer 316 is formed in a longer formation
region to further cover a part of the wide portion 303c.
Furthermore, it is also acceptable that the current non-injection
layer 316 is formed in a shorter formation region to cover the
second narrow portion 303e and a part of the second tapered portion
303d.
[0155] In the above embodiments, the coupling target of the laser
light by the lens system is not limited to an optical fiber. For
example, in a case where the semiconductor laser or the
semiconductor laser module according to the above embodiments is
used for an optical disk, the target of the laser light coupling by
the lens system is a recording surface of the optical disk, or the
like.
[0156] Moreover, because the semiconductor laser or the
semiconductor laser module according to the above embodiments can
output a high-power laser light, they are particularly suitable for
use as a pumping light source (so-called a pumping laser) of which
laser-oscillation wavelength is in a 1.48 .mu.m band (in a range of
about 1.38 .mu.m to 1.52 .mu.m). Such pumping light source can be
used in an optical fiber amplifier (a Raman amplifier or an
erbium-doped optical fiber amplifier), an optical fiber laser, or
the like, used for optical communication or the like. Moreover, the
above embodiments are preferably suitable for use as a pumping
light source of which laser-oscillation wavelength is in a 0.98
.mu.m band (in a range of about 0.92 .mu.m to 0.99 .mu.m).
Furthermore, the above embodiments are preferably suitable in the
similar manner for use as a semiconductor laser or a semiconductor
laser module with a 650 .mu.m band, in which AlGaInP-based material
is used as a material of an active layer, or a semiconductor laser
or a semiconductor laser module with a band from blue to
ultraviolet, in which nitride semiconductor is used as a material
of an active layer.
[0157] In a case of using the semiconductor laser module according
to the above embodiments, it is preferable that an optical power
intensity from an optical fiber for outputting laser light be equal
to or greater than 300 mW.
[0158] In the semiconductor laser or the semiconductor laser module
for a pumping light source, it is possible to provide a fiber bragg
grating (FBG) being a wavelength selecting reflection filter in an
optical fiber for outputting laser light to reduce a driving
current dependency of a laser-oscillation wavelength. In the case
where the FBG is provided, the FBG and an optical resonator in the
semiconductor laser form a multiple resonator. It is not preferable
that a structure with which a reflection point or light
interference is generated be provided within the semiconductor
laser because such structure makes the optical characteristic of
the semiconductor laser exhibits more complex behaviors. However,
the semiconductor laser according to the above embodiments does not
have the structure that generates a complex reflection point or
light interference inside same as the conventional straight
waveguide because the wide portion and the narrow portion are
connected by the tapered portion so that the width of the waveguide
changes gradually. Consequently, the semiconductor laser and the
semiconductor laser module according to the above embodiments can
achieve high power and have characteristics comparable to the
semiconductor laser with the straight waveguide structure.
[0159] In the above description, although the Fabry-Perot
semiconductor laser has been explained as the embodiments of the
present invention, the present invention can also be applied to a
distributed feed back (DFB) laser with a built-in diffraction
grating. Especially, a distribution of optical intensity inside a
resonator of the DBF laser by a phase-shift diffraction grating
will be like the one shown in FIG. 27. In FIG. 27, a horizontal
axis indicates a position of the resonator, and a vertical axis
indicates optical intensity. A coupling coefficient .kappa. of the
diffraction grating is 15 cm.sup.-1, for instance. As shown in FIG.
27, in the DBF laser by a phase-shift grating, optical intensity of
a central portion of the resonator tends to be high, and the
optical intensity tends to decrease on the facet side. Therefore,
the barrel waveguide as the above embodiments is suitable in
achieving high power because distribution of optical intensity and
distribution of carriers conform with each other. Because the
distribution of the optical intensity and the distribution of the
carriers conform with each other, a hole-burning can be suppressed,
and a line width of the output laser light can be made
narrower.
[0160] The present invention is not limited to the above-described
embodiments. The present invention includes ones obtained by
appropriately combining the structural elements of the
above-described embodiments.
[0161] Japanese Patent Application Laid-Open No. 2002-280668
describes in paragraph 0065 discloses an example in which a width
of a waveguide on an output facet side is narrowed by switching the
output facet and a rear facet of the tapered waveguide as shown in
FIG. 7. Japanese Patent Application Laid-Open No. 2002-280668
describes about a problem in that a kink occurs in such structure,
however, does not provide any solution to such problem.
[0162] On the other hand, the present invention provides a new
waveguide structure such as the barrel waveguide. As described
above, in the barrel waveguide, each portion has a specific
function. Therefore, it is not possible to achieve excellent
characteristics with any one of them lacking.
[0163] Moreover, detailed examination by the inventors of the
present invention has made clear the phenomenon that further
excellent waveguide mode can be achieved by designing each of the
structural elements of the waveguide in the barrel waveguide more
properly. Japanese Patent Application Laid-Open No. 2002-280668
also refers to the kink that is a problem particularly in the field
of high power laser. However, the interference phenomenon in the
second narrow portion and the accompanying deformation of the FFP
are problems that has been made clear for the first time by the
inventors of the present invention as a result of their detail
examination. Because the problems were found for the first time in
the process of examining the present invention, it can be believed
that one skilled in the art cannot easily come up with the
structure that can be the solution to such problems.
[0164] Additional advantages and modifications will readily occur
to those skilled in the art. Therefore, the disclosure in its
broader aspects is not limited to the specific details,
representative embodiments and alternate examples shown and
described herein. Accordingly, various modifications may be made
without departing from the spirit or scope of the general inventive
concept as defined by the appended claims and their equivalents.
Furthermore, the above-mentioned embodiments and the alternate
examples can be arbitrarily combined with one another.
* * * * *