U.S. patent application number 14/297320 was filed with the patent office on 2014-09-25 for method of forming a thermally stable diamond cutting element.
The applicant listed for this patent is Smith International, Inc.. Invention is credited to Peter T. Cariveau, Ronald K. Eyre, Yi Fang.
Application Number | 20140283457 14/297320 |
Document ID | / |
Family ID | 43533676 |
Filed Date | 2014-09-25 |
United States Patent
Application |
20140283457 |
Kind Code |
A1 |
Cariveau; Peter T. ; et
al. |
September 25, 2014 |
METHOD OF FORMING A THERMALLY STABLE DIAMOND CUTTING ELEMENT
Abstract
A method for forming a diamond body includes placing a thermally
stable polycrystalline diamond body and a first substrate into an
enclosure, the thermally stable polycrystalline diamond body
comprising a plurality of bonded diamond crystals and a plurality
of interstitial regions between the bonded diamond crystals, the
interstitial regions being substantially free of a catalyst
material, heating the thermally stable polycrystalline diamond body
and the first substrate to remove residual materials from the
thermally stable polycrystalline diamond body, subjecting the
thermally stable polycrystalline diamond body and the first
substrate to a vacuum for evacuating such residual material, and
pressing under high temperature the enclosure, the thermally stable
polycrystalline diamond body and the first substrate while
maintaining a vacuum in the enclosure to bond the thermally stable
polycrystalline diamond body to the substrate.
Inventors: |
Cariveau; Peter T.; (Spring,
TX) ; Eyre; Ronald K.; (Orem, UT) ; Fang;
Yi; (Orem, UT) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Smith International, Inc. |
Houston |
TX |
US |
|
|
Family ID: |
43533676 |
Appl. No.: |
14/297320 |
Filed: |
June 5, 2014 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
12852071 |
Aug 6, 2010 |
8758463 |
|
|
14297320 |
|
|
|
|
61232228 |
Aug 7, 2009 |
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Current U.S.
Class: |
51/309 ;
51/307 |
Current CPC
Class: |
B22F 2998/10 20130101;
B01J 2203/0685 20130101; C22C 2204/00 20130101; B01J 3/062
20130101; B01J 2203/062 20130101; C22C 26/00 20130101; B22F 7/062
20130101; B24D 18/0009 20130101; B01J 2203/0655 20130101; B24D 3/10
20130101; B22F 2998/10 20130101; C22C 26/00 20130101; B22F 2003/244
20130101; B22F 3/1208 20130101; B22F 3/15 20130101; B22F 2003/244
20130101 |
Class at
Publication: |
51/309 ;
51/307 |
International
Class: |
B24D 18/00 20060101
B24D018/00; B24D 3/10 20060101 B24D003/10 |
Claims
1. A method for forming a diamond body, comprising: placing a
thermally stable polycrystalline diamond body and a first substrate
into an enclosure, the thermally stable polycrystalline diamond
body comprising a plurality of bonded diamond crystals and a
plurality of interstitial regions between the bonded diamond
crystals, the interstitial regions being substantially free of a
catalyst material; heating the thermally stable polycrystalline
diamond body and the first substrate to remove residual materials
from the thermally stable polycrystalline diamond body; subjecting
the thermally stable polycrystalline diamond body and the first
substrate to a vacuum for evacuating residual materials from the
thermally stable polycrystalline diamond body; and pressing under
high temperature the enclosure, the thermally stable
polycrystalline diamond body, and the first substrate while
maintaining a vacuum in the enclosure to bond the thermally stable
polycrystalline diamond body to the substrate.
2. The method of claim 1, further comprising: sintering diamond
crystals and a catalyst material at high temperature and high
pressure to form a polycrystalline diamond body.
3. The method of claim 2, wherein the polycrystalline diamond body
is formed unattached to a substrate.
4. The method of claim 2, further comprising: removing at least a
substantial portion of the catalyst material from the
polycrystalline diamond body to form the thermally stable
polycrystalline diamond body.
5. The method of claim 2, wherein the catalyst material is provided
in powder form and mixed with the diamond crystals prior to
sintering.
6. The method of claim 2, wherein prior to sintering, the diamond
crystals and catalyst material are heated under a first vacuum.
7. The method of claim 1, wherein an insulating material is
disposed between the thermally stable polycrystalline diamond body
and the enclosure such that the thermally stable polycrystalline
diamond body does not contact the enclosure.
8. The method of claim 1, further comprising: preventing contact of
the thermally stable diamond body with the enclosure during the
pressing.
9. The method of claim 1, wherein the subjecting to a vacuum is
performed after the heating is completed.
10. The method of claim 1, further comprising sealing the enclosure
by welding it closed to create a vacuum inside the enclosure.
11. The method of claim 1, wherein the subjecting to a vacuum is
initiated before the heating and maintained simultaneously with the
heating.
12. The method of claim 1, further comprising placing a braze
material within the enclosure.
13. The method of claim 12, wherein the heating comprises: heating
to a first temperature to clean the thermally stable
polycrystalline diamond body; heating to a second temperature to
melt the braze material; and cooling to a third temperature to
solidify the braze material, wherein the vacuum maintained as the
braze material solidifies to create a vacuum sealed inside the
enclosure.
14. The method of claim 1, wherein, pressing under high
temperatures comprises infiltrating the thermally stable
polycrystalline diamond body with an infiltrant material.
15. The method of claim 14, further comprising removing at least a
portion of the infiltrant material from at least a portion of the
bonded thermally stable polycrystalline diamond body.
16. The method of claim 1, wherein the vacuum is approximately
10.sup.-4 Torr or lower.
17. A method for forming a diamond body, comprising: placing a
thermally stable polycrystalline diamond body and a substrate into
an enclosure, the thermally stable polycrystalline diamond body
formed using high temperature and high pressure sintering
conditions; heating the thermally stable polycrystalline diamond
body and the substrate to remove residual materials from the
thermally stable polycrystalline diamond body; and maintaining a
vacuum in the enclosure while the enclosure, the thermally stable
polycrystalline diamond body and the substrate are subjected to
high temperature and high pressure to bond the thermally stable
polycrystalline diamond body to the substrate, wherein the high
temperature and high pressure used in bonding are lower than the
high temperature and high pressure sintering conditions.
18. The method of claim 17, further comprising cooling the
enclosure to room temperature after the heating, wherein after the
cooling the vacuum is applied in the enclosure.
19. The method of claim 17, wherein the vacuum is maintained by
welding the enclosure closed to seal the enclosure.
20. The method of claim 17, wherein the vacuum is maintained by
melting and solidifying a braze material within the enclosure.
21. The method of claim 17, wherein the vacuum is applied during
the heating.
22. The method of claim 17, further comprising: sintering diamond
crystals and a catalyst material under the high temperature and
high pressure sintering conditions to form a polycrystalline
diamond body.
23. The method of claim 22, wherein the polycrystalline diamond
body is formed unattached to a substrate.
24. The method of claim 22, further comprising: removing at least a
substantial portion of the catalyst material from the
polycrystalline diamond body to form the thermally stable
polycrystalline diamond body.
25. The method of claim 22, wherein the catalyst material is
provided in powder form and mixed with the diamond crystals prior
to sintering.
26. The method of claim 22, wherein prior to sintering, the diamond
crystals and catalyst material are heated under a first vacuum.
27. The method of claim 17, wherein the vacuum is approximately
10.sup.-4 Torr or lower.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This Application is a Continuation of U.S. application Ser.
No. 12/852,071, filed on Aug. 6, 2010, which claims priority to and
the benefit of U.S. Provisional Application 61/232,228, filed on
Aug. 7, 2009, the contents of both of which are hereby incorporated
by reference.
BACKGROUND
[0002] Cutting elements, such as shear cutter type cutting elements
used in rock bits or other cutting tools, typically have a body
(i.e., a substrate) and an ultra hard material. The ultra hard
material forms the cutting surface of the cutting element, and the
substrate is typically provided for the purpose of attacking the
Ultra hard material to the cutting tool. The substrate is generally
made from tungsten carbide-cobalt (sometimes referred to simply as
"cemented tungsten carbide," "tungsten carbide" or "carbide"). The
ultra bard material layer is a polycrystalline ultra hard material,
such as polycrystalline diamond ("PCD"), polycrystalline cubic
boron nitride ("PCBN") or thermally stable product ("TSP") such as
thermally stable polycrystalline diamond. The ultra hard material
provides a high level of wear and/or abrasion resistance that is
greater than that of the metallic substrate.
[0003] The PCD material is formed by a known process in which
diamond crystals are mixed with a catalyst material and sintered
with a substrate at high pressure and high temperature. Catalyst
from the substrate also infiltrates the diamond crystals during the
sintering process. This sintering process creates as
polycrystalline diamond structure having a network of
intercrystalline bonded diamond crystals, with the catalyst
material remaining in the voids or gaps between the bonded diamond
crystals. The catalyst material facilitates and promotes the
inter-crystalline bonding. The catalyst material is typically a
solvent catalyst metal from Group VIII of the Periodic table (CAS
version of the periodic table in the CRC Handbook of Chemistry and
Physics), such as cobalt. However, the presence of the catalyst
material in the sintered PCD material introduces thermal stresses
to the PCD material, when the PCD material is heated, as for
example by frictional heating during use, as the catalyst typically
has a higher coefficient of thermal expansion than does the PCD
material. Thus, the sintered PCD is subject to thermal stresses,
which limit the service life of the cutting element. Furthermore,
when the operating or servicing temperature reaches or exceeds
700.degree. C., the diamond structure in the PCD layer converts
back to graphite with the presence of Group VIII catalyst material,
causing structural disintegration in the PCD layer.
[0004] To address this problem, the catalyst is substantially
removed from the PCD material, such as by leaching, in order to
create TSP. For example, one known approach is to remove a
substantial portion of the catalyst material from at least a
portion of the sintered PCD by subjecting the sintered PCD
construction to a leaching process, which forms a TSP material
portion substantially free of the catalyst material. The entire PCD
layer can be subjected to this leaching process to remove the
catalyst material. If the PCD material is attached to a substrate,
the substrate and the PCD material can be separated from each other
either before or after the leaching process.
[0005] After the TSP material has been formed, it is bonded onto a
substrate in order to form a cutting element. During this bonding
process, the TSP material and substrate are subjected to heat and
pressure. An infiltrant material (such as cobalt from the
substrate) infiltrates the TSP material, moving into the voids
(i.e., the interstitial spaces) between the bonded crystals,
previously occupied by the catalyst material. Other metal or metal
alloy or non-metallic infiltrants may be used in addition to or
instead of cobalt from the substrate. After bonding, the
infiltrant(s) can be removed from a portion of the infiltrated TSP
material. For example, the infiltrant can be leached from the
cutting surface of the infiltrated TSP (opposite the substrate) to
remove the infiltrant materials in order to create a thermally
stable cutting surface, while retaining the infiltrant in the
portion of the infiltrated TSP closer to the substrate, in order to
retain a strong bond between the diamond layer and the
substrate.
[0006] During the catalyst removing step, when the catalyst
material is removed from the PCD to form TSP, some residual
materials are left behind in the voids between the diamond
crystals. Some residuals may be, for example, the residual cobalt
carbides in the voids not completely digested by the leaching
agent, and corresponding oxides forming afterwards. The presence of
these residuals hinders the infiltration of cobalt (or other
infiltrant) into the TSP during bonding. Additionally, gases,
moisture, and residual leaching agent occupy the voids between the
diamond crystals. These gases, moisture, oxides, and other
residuals inhibit the infiltration of the infiltrant into the TSP
material, as they exert a force against the infiltrant material,
that is moving into the TSP.
[0007] The result is TSP material that is only partially
infiltrated or not properly infiltrated, as the infiltration path
is blocked by those residual materials. Partial infiltration is
problematic, as thermal and other stresses build in the
non-infiltrated region of the TSP. Partial infiltration also makes
leaching more difficult, and weakens the bond between the TSP layer
and the substrate. Partial infiltration also creates
inconsistencies in the performance of the TSP cutting elements.
Accordingly, there is a need for a system and method for forming
TSP material that facilitates infiltration during bonding, and
improves the thermal characteristics of the material.
SUMMARY
[0008] This summary is provided to introduce a selection of
concepts that are further described below in the detailed
description. This summary is not intended to identify key or
essential features of the claimed subject matter, nor is it
intended to be used as an aid in limiting the scope of the claimed
subject matter.
[0009] In one aspect, embodiments disclosed herein relate to a
method for forming a diamond body that includes placing a thermally
stable polycrystalline diamond body and a first substrate into an
enclosure, the thermally stable polycrystalline diamond body
comprising a plurality of bonded diamond crystals and a plurality
of interstitial regions between the bonded diamond crystals, the
interstitial regions being substantially free of a catalyst
material, heating the thermally stable polycrystalline diamond body
and the first substrate to remove residual materials from the
thermally stable polycrystalline diamond body, subjecting the
thermally stable polycrystalline diamond, body and the first
substrate to a vacuum for evacuating such residual material, and
pressing under high temperature the enclosure, the thermally stable
polycrystalline diamond body and the first substrate while
maintaining a vacuum in the enclosure to bond the thermally stable
polycrystalline diamond body to the substrate.
[0010] In another aspect, embodiments disclosed herein relate to a
method for forming a diamond body that includes placing a thermally
stable polycrystalline diamond body and a substrate into an
enclosure, the thermally stable polycrystalline diamond body formed
using high temperature and high pressure sintering conditions,
heating the thermally stable polycrystalline diamond body and the
substrate to remove residual materials from the thermally stable
polycrystalline diamond body, maintaining a vacuum in the enclosure
while the enclosure, the thermally stable polycrystalline diamond
body and the substrate are subjected to high temperature and high
pressure to bond the thermally stable polycrystalline diamond body
to the substrate, wherein the high temperature and high pressure
used in bonding are lower than the high temperature and high
pressure sintering conditions.
[0011] Other aspects and advantages of the claimed subject matter
will be apparent from the following description and the appended
claims.
BRIEF DESCRIPTION OF DRAWINGS
[0012] FIG. 1 is a flowchart of a method of forming a bonded TSP
cutting element according to an embodiment of the invention.
[0013] FIG. 2A is a partial cross-sectional view of a
partially-infiltrated TSP cutting element.
[0014] FIG. 2B is a partial cross-sectional view of a
partially-infiltrated TSP cutting element.
[0015] FIG. 2C is a partial cross-sectional view of a
partially-infiltrated TSP cutting element.
[0016] FIG. 3A is a representation of a partially-infiltrated void
in a TSP material.
[0017] FIG. 3B is a representation of a more fully-infiltrated void
in a TSP material according to an embodiment of the invention.
[0018] FIG. 4 is a cross-sectional view of an assembly for bonding
according to an embodiment of the invention.
[0019] FIG. 5 is a perspective view of a drag bit body including a
cutting element according to an embodiment of the invention.
[0020] FIG. 6A is a representation Of a polycrystalline diamond
structure with catalyst material occupying the voids.
[0021] FIG. 6B is a representation of a leached polycrystalline
diamond structure with substantially empty voids.
DETAILED DESCRIPTION
[0022] The present invention involves the use of a vacuum-sealed
enclosure during a bonding process to improve the properties of an
infiltrated TSP cutting element. In one exemplary embodiment,
diamond crystals and a catalyst material are high-pressure
high-temperature sintered to form a polycrystalline diamond
material (PCD). If a substrate is present during this sintering
step, catalyst material from the substrate infiltrates the diamond
crystal layer. After sintering, the substrate is removed. The
catalyst is removed from the PCD, forming a thermally stable
product (TSP). In this leaching or removal process, substantially
all (about 95% or more, for example 98% or more, or even 99% or
more) of the catalyst is removed from at least a portion of the
PCD, forming TSP. Alternatively, leaching can be done prior to
removing the substrate from the PCD. The TSP is then bonded to a
substrate via an HPHT bonding process. The TSP material and the
substrate are placed into an enclosure such as a can assembly,
heated, and subjected to a vacuum in order to remove gas, moisture,
residual leaching agent, and other residuals that can inhibit
infiltration of the TSP layer. The TSP material is then bonded to
the substrate in a HPHT bonding process. During bonding, an
infiltrant such as metal from the substrate infiltrates the TSP
layer. Other infiltrants may be used, instead of or in addition to
material from the substrate. This method produces a bonded,
infiltrated TSP cutting element that is more fully infiltrated than
TSP cutting elements created through prior art methods. After the
bonding, a portion of the infiltrated TSP cutting layer, such as
the top portion of the layer opposite the substrate, may be leached
to form a thermally stable cutting surface.
[0023] An exemplary embodiment of as method of forming an
infiltrated, bonded TSP cutting element according to the present
invention is outlined in FIG. 1. The method includes providing an
ultra-hard material and a catalyst material 110, and then sintering
these materials at high pressure and high temperature (HPHT
sintering) 112. The high pressure may be 5,000 MPa or greater, and
the high temperature may be about 1,300.degree. C. to 1,500.degree.
C. or higher. Optionally, prior to sintering, the ultra-hard and
catalyst materials are heated under vacuum to cleanse them. The
ultra-hard material is preferably diamond provided in the form of
natural and/or synthetic diamond powders. Exemplary diamond crystal
sires are in the range of about 2-50 micron.
[0024] The catalyst material may be a metal from Group VIII of the
Periodic table (CAS version of the periodic table in the CRC
Handbook of Chemistry and Physics), such as cobalt. This material
can be provided in powder form and mixed with the ultra hard
material to form a uniform distribution, or a substrate, such as a
tungsten carbide substrate (WC--Co), may be provided as the source
of the catalyst material. If a substrate is used, such as a WC--Co
substrate, the catalyst from the substrate, i.e., the cobalt, moves
into the voids between the diamond crystals during the HPHT
sintering. The catalyst material encourages the growth and bonding
of crystals during the HPHT sintering to loon polycrystalline
diamond. As used herein, the term "catalyst material" refers to the
material that is initially used to facilitate diamond-to-diamond
bonding or sintering during the initial HPHT process used to form
the PCD.
[0025] The HPHT sintering 112 creates a polycrystalline structure
as shown in FIG. 6A, in which the diamond crystals 50 are bonded
together, with the catalyst material 52 remaining dispersed within
the interstitial regions or voids 54 between the diamond crystals
50. However, as mentioned above, the catalyst material introduces
thermal stresses to the PCD material during heating, as the
catalyst typically has as higher coefficient of thermal expansion
than does the PCD. Thus, the method includes removing (such as by
leaching) the catalyst material from the PCD material 114 to form a
TSP material that is substantially free of the catalyst
material.
[0026] The leaching can be accomplished by subjecting the PCD
material to a leaching agent (such as an acid wash) over a
particular period of time or by other known leaching methods such
as electrolytic process, and others. When reference is made to
leaching or removing the catalyst material from the PCD, it should
be understood to mean that a substantial portion of the catalyst
material is removed from the part. However, it should also be
understood that some small/trace amount of catalyst material may
still remain in the TSP part such as within the interstitial
regions or adhered to the surface of the diamond crystals. Thus,
the leaching or removal process creates a TSP material in which
substantially all (about 95% or more, as for example at least 98%
or at least 99%) of the catalyst material has been removed from at
least a portion of the PCD. In an embodiment, the catalyst material
is removed from at least a surface of the PCD. When the resulting
TSP layer is bonded to a new substrate, this leached surface faces
the substrate so that infiltrant from the substrate can move into
the ultra-hard layer, moving into the voids left by the catalyst.
In an embodiment, the catalyst material is removed from the entire
PCD layer.
[0027] Once the catalyst material has been removed, the result is a
thermally stable polycrystalline diamond product or body ("TSP").
The TSP body has a material microstructure characterized by a
polycrystalline phase of bonded-together diamond crystals 50 and a
plurality of substantially empty voids 54 between the bonded
diamond crystals 50, as shown in FIG. 6B. These voids 54 are
substantially empty due to the removal of the catalyst material
during the leaching process described above.
[0028] Referring again to FIG. 1, the TSP, material is then
subjected to a bonding process 116. In an embodiment, the substrate
includes as one of its material constituents a metal solvent that
is capable of melting and infiltrating into the TSP material. In
one embodiment, the substrate is tungsten carbide with a cobalt
binder (WC--Co), and the cobalt acts as the metal solvent
infiltrant in the bonding step. In other embodiments, other
infiltrants such is other metals or metal alloys may be utilized.
If an additional infiltrant is used it may be provided in the form
of a powder or a sheet or disc of material that is positioned
between the TSP and the substrate, or on the side of the TSP
opposite the substrate. The infiltrant may be a combination of
cobalt from the substrate and this other added infiltrant.
[0029] The bonding process 116 includes placing the TSP material
and the substrate into an enclosure 118, such as a can assembly,
which protects the TSP material and substrate during bonding. The
enclosure will now be described, referring to FIG. 4, which shows a
can assembly 30 according to an embodiment of the invention. The
can assembly 30 includes a can 32 with a peripheral wall 34. The
can 32 is typically constructed from a refractory metal such as for
example tantalum, niobium, or molybdenum-zirconium alloy. The
purpose of the can is to protect the TSP and the substrate from
reacting with the surrounding vacuum furnace or press assembly
during HPHT bonding. The can may be cylindrical, with one curving
peripheral wall 34, or it may be any other suitable shape for
enclosing the TSP material and substrate.
[0030] The substrate 12 and TSP layer 14 are placed in the can
through a top opening 44, with the substrate 12 above the TSP layer
14. The TSP layer rests on an insulator layer 36 that prevents the
TSP material from touching and reacting with the walls and floor of
the can 32. In an exemplary embodiment, the insulator is in powder
form. The TSP and substrate are pushed down into the can to cause
the insulator 36 to flow up around the sides of the TSP layer and
the substrate. The insulator material is a non-sintering,
non-reacting material such as hexagonal boron nitride (HBN), cubic
boron nitride (CBN), silicon nitride, an oxide, or a ceramic. HBN
is preferred for its good flowability. The insulator layer
insulates the can from the TSP diamond and vice versa. A disc 38
made from the same material as the can is placed on top of the
substrate 12 in the can, as shown in FIG. 4, to form a top surface
or lid on the can 32.
[0031] After the insulator layer 36, TSP material 14, substrate 12,
and disc 38 are placed into the can 32, and the TSP and substrate
have been pushed down into the insulator, the top end 34 a of the
peripheral wall 34 of the can is folded over to retain these
materials in the can 32. A layer or disc of braze material 40 is
placed on top of the disc 38 and folded end 34 a, whereby the
folded end is sandwiched between the disc 38 and the braze material
disc 40. In an exemplary embodiment, the folded portion overlaps
the disc 38 along its entire periphery. Finally, a can cap or lid
42 is placed over the braze material to complete the can assembly
30. Optionally, the outer end 42 a of the cap 42 is folded over as
shown in FIG. 4 to further seal the can and prevent the braze
material from leaking out of the can as it melts.
[0032] The braze material 40 may be provided in the form of a disc
40, as shown in FIG. 4, or a ring or other suitable shapes. The
braze material in an exemplary embodiment is a metal such as
copper, nickel, or an alloy, with a melting point that is within
the temperature range where diamond is thermodynamically stable.
The melting point should be high enough that the braze does not
melt while the TSP material is being cleaned (as described below),
but low enough that the TSP material is not damaged when the
temperature is raised to melt the braze. Thus, the melting
temperature of the braze should be lower than the temperature at
which the diamond is heated during the HTHP sintering process 112
(see FIG. 1). In one embodiment, the braze material has a melting
point between about 600.degree. C. and 1,200.degree. C.
[0033] Referring again to FIG. 1, the method includes placing the
TSP and substrate into an enclosure 118, such as the can assembly
30 shown in FIG. 4. The TSP material and substrate are then heated
inside the can assembly. This heating is beneficial to dean the
materials and promote outgassing prior to the final HPHT bonding,
in order to reduce the amount of residuals that interfere with
infiltration.
[0034] The method also includes applying a vacuum to the can
assembly. In an exemplary embodiment, the vacuum is applied by a
vacuum furnace. The vacuum can be applied after the heating step is
completed, or the vacuum can be initiated before heating and
maintained simultaneously with the heating. Thus, referring to FIG.
1, an embodiment of the invention includes applying the heat and
vacuum simultaneously 120. This does not mean the heat and vacuum
are both initiated at the same time, but that the vacuum is
maintained while the heating is performed, so that the can is
exposed to both vacuum and heat at the same time. In an exemplary
embodiment, the can assembly is placed inside a vacuum furnace. A
vacuum is drawn and then the heat is applied in two steps. The can
assembly with the TSP material and substrate is raised to a first
temperature that is below the melting point of the braze material.
The heat and vacuum promote outgassing of the TSP material to
remove residual material that was left in the TSP voids after the
leaching process. This first temperature may fall within the range
600-700.degree. C. During this first heating step, before the braze
melts, the can is open to the surrounding atmosphere through gaps
or openings 46 between the can 32 and lid 42. These gaps 46 allow
materials to outgas and escape from the TSP material. The vacuum
facilitates the evacuation of these materials from the TSP.
[0035] While maintaining the vacuum, the temperature is then raised
to a second temperature that is equal to or higher than the melting
point of the braze. This temperature may be just past the melting
temperature of the braze. This second temperature may be between
800-1200.degree. C. As the braze melts it flows around the cap 42
and on disc 38 to seal the top opening 44 of the can 32. After the
braze has melted and flowed into the gaps 46, the temperature is
lowered so that the braze cools and solidifies to seal the can. The
vacuum is maintained as the braze solidifies, such that a vacuum is
created inside the sealed can. In one embodiment, the vacuum inside
the can is 10.sup.-4 Ton or lower, and preferably 10.sup.-5 Torr or
even 10.sup.-6 Torr or lower. The vacuum may be within the typical
pressure range of any suitable commercially-available vacuum
furnace.
[0036] Alternatively, the can assembly can be heated first and then
subjected to vacuum. Thus, in an embodiment, the bonding process
includes heating the can 122 and then (sequentially) applying a
vacuum 124. The material is heated to a temperature that is high
enough to clean the TSP and substrate materials, as described
before. Then, the can assembly is allowed to cool to room
temperature. A vacuum is applied to evacuate all of the residuals
and gases that accumulated during the heating step. The can is then
sealed at room temperature such as by welding it closed, so that a
vacuum is formed inside the can. Electron beam welding ("EB
welding") is well known as a sealing process. In this embodiment,
it is not necessary to include the braze disc 40.
[0037] In both cases (applying the heat and vacuum simultaneously
120 or sequentially 122, 124), in an exemplary embodiment the
vacuum is sufficient to remove at least 20% of the residuals in the
TSP layer, and in another embodiment at least 50%, and in another
embodiment at least 80%. In exemplary embodiments, the vacuum is
sufficient to remove at least 95% of the residuals in the TSP
layer, such as about 98% or about 99%. The amount of residuals
removed from the TSP layer can be determined through gas fusion
analysis.
[0038] The vacuum furnace may be any suitable,
commercially-available vacuum furnace, such as one provided, by
Centorr Vacuum Industries, of Nashua, N.H. A combination of a
mechanical pump and a turbomolecular vacuum pump/diffusion pump may
be used. The can assembly is typically cooled to room temperature
inside the vacuum furnace after it is heated and sealed. A vacuum
may still be applied while the sealed can assembly is cooling to
room temperature.
[0039] Finally, the bonding process 116 includes applying heat and
pressure to the sealed can, with the TSP and the substrate inside,
to bond the TSP to the substrate 126. This can be referred to as
"HPHT bonding" and includes placing the vacuum-sealed can assembly
into an HPHT assembly and pressing it at high heat and pressure to
bond the TSP material to the substrate. The HTHP bonding step may
have different durations, temperatures, and pressures than the HTHP
sintering step. For example, the temperatures and pressures may be
lower during bonding than during HPHT sintering 112. During this
final bonding step, an infiltrant will infiltrate the leached TSP
material, moving into the voids between the diamond crystals and
acting as a glue to bond the TSP layer to the substrate. The
infiltrant is typically a metal from the substrate, such as cobalt,
but other infiltrants such as other metals or metal alloys may be
used. For example, an added infiltrant in the form of a powder,
foil, or film may be provided between the TSP and substrate to
infiltrate both the TSP layer and the substrate and facilitate
bonding of these two layers, or additional infiltrant may be placed
on the side of the TSP layer opposite the substrate. The term
"infiltrant" as used herein refers to a material other than the
catalyst material used to initially form the PCD material, and can
include materials in Group VIII of the Periodic table (CAS version
of the periodic table in the CRC Handbook of Chemistry and
Physics). In an exemplary embodiment, the lower half of the TSP
layer (nearest the substrate) is substantially infiltrated by the
infiltrant.
[0040] Optionally, after bonding, the infiltrant can be removed
from a portion of the infiltrated TSP material 128 as for example
from the portion that does the cutting and is exposed to high
frictional heat, to improve the thermal stability of that portion
of the TSP layer. For example, in one embodiment, substantially all
of the infiltrant is removed by leaching from the exposed cutting
surface of the TSP layer to a certain depth, but not all the way
through the TSP layer to the substrate. Thus, a portion of the
infiltrated TSP layer closer to the substrate still retains the
infiltrant in the voids between the diamond crystals. The presence
of the infiltrant here preserves the bonding of the infiltrated TSP
layer to the substrate. As before, in the areas where substantially
all of the infiltrant is removed, trace amounts of infiltrant may
remain. The TSP material layer having at least a portion leached of
an infiltrant may be infiltrated with an oxide, nitride or a
ceramic for improving the TSP material toughness and wear
resistance.
[0041] The infiltrated TSP cutting element can then he incorporated
into a cutting tool such as a tool for mining, cutting, machining,
milling, and construction applications, where properties of thermal
stability, wear and abrasion resistance, and reduced thermal stress
are desirable. For example, the cutting element of this invention
may be incorporated into machine tools and drill and mining bits
such as roller cone drill bits, and drag bits (fixed cutter drill
bits). FIG. 5 shows a cutting element 10 with substrate 12 and
infiltrated TSP layer 14, incorporated into a drag bit body 20.
[0042] Maintaining a vacuum in the can assembly during bonding
improves the infiltration of the infiltrant material into the TSP
diamond interstitial spaces. The vacuum prevents residual materials
and outgases from pushing against, the infiltrant and blocking its
path. As a result, the infiltrant can move more easily into the TSP
layer, and the TSP layer is more fully infiltrated than a TSP
material formed without maintaining a vacuum during the bonding
process, providing for a better bond between the TSP layer and the
substrate. Fully infiltrating the TSP reduces stresses between
infiltrated and non- or partially-infiltrated regions. Vacuum
sealing aids in fully infiltrating thicker TSP layers and enhances
process consistency.
[0043] For example, FIGS. 2A-2C show three examples of a TSP
cutting element 10', which has been bonded without applying a
vacuum, resulting in partial infiltration. The cutting element 10'
includes a substrate 12 and TSP layer 14. After bonding, the TSP
layer 14 has been partially infiltrated, resulting in an
infiltrated portion 14 a and non-infiltrated portion 14 b. The
non-infiltrated portion 14 b is typically located near the surface
of the TSP layer opposite the substrate, as the infiltrant from the
substrate has to cross a larger distance to reach this portion. The
non-infiltrated portion 14 b may extend from one side of the TSP
layer, as shown in FIG. 2A, or it may cross from one side to the
other, as shown in FIG. 2B, or it may extend down from the top
surface of the TSP layer, as shown in FIG. 2C. In each of these
scenarios, the partial infiltration of the TSP, due to the presence
of non-infiltrated regions in the TSP, generates residual stresses
in the TSP layer at the interfaces between the infiltrated and
non-infiltrated regions. During HPHT bonding, the material
infiltrating the TSP layer applies pressure to the TSP in the areas
it infiltrates. However, the non-infiltrated areas are not
subjected to the same pressure. As a result, the infiltrated and
non-infiltrated regions have different stress states after the
bonding process, leading to residual stresses at the interface
between these regions. These stresses weaken the TSP layer and can
lead to early failure of the TSP cutting element.
[0044] As explained above, during bonding, the metal infiltrant
moves into voids between bonded diamond crystals. When the TSP
layer is only partially infiltrated, due to the presence of
residual materials as described above, the voids 16 will be only
partially filled with the infiltrant 18, leaving un-filled areas 18
a, as shown in FIG. 3A. When the TSP layer is fully infiltrated,
the void 16 is more completely filled with the infiltrant 18, as
shown in FIG. 3B. These figures are not meant to indicate that all
voids in the bonded TSP are fully infiltrated, as shown in FIG. 3B.
Instead, with the method of this invention, a greater percentage of
the voids will be substantially infiltrated, and/or the voids will
be infiltrated to a greater extent than with prior art methods. For
example, in one embodiment, the areas of the infiltrated TSP near
the cutting surface, opposite the substrate, are more fully
infiltrated than with prior art methods. In another embodiment, the
areas of the re-infiltrated TSP near the substrate are more fully
infiltrated, creating a better bond between the TSP and the
substrate, than with prior art methods.
[0045] Relative sizes are exaggerated in FIGS. 2A-2C, 3A-3B, 4, and
6A-6B for clarity, and are not necessarily to scale.
[0046] Although the present invention has been described and
illustrated in respect to exemplary embodiments, it is to be
understood that it is not to be so limited, since changes and
modifications may be made therein which are within the full
intended scope of this invention as hereinafter claimed. For
example, the infiltrants identified herein for infiltrating the TSP
material have been identified by way of example. Other infiltrants
may also be used to infiltrate the TSP material and include any
metals and metal alloys such as Group VIII and Group IB metals and
metal alloys (CAS version of the periodic table in the CRC Handbook
of Chemistry and Physics). Moreover, it should be understood that
the TSP material may he attached to other carbide substrates
besides tungsten carbide substrates, such as substrates made of
carbides of W, Ti, Mo, Nb, V, Hf, Ta, and Cr.
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