U.S. patent application number 14/265991 was filed with the patent office on 2014-08-21 for graphene defect alteration.
This patent application is currently assigned to EMPIRE TECHNOLOGY DEVELOPMENT, LLC. The applicant listed for this patent is EMPIRE TECHNOLOGY DEVELOPMENT, LLC. Invention is credited to SETH ADRIAN MILLER.
Application Number | 20140230733 14/265991 |
Document ID | / |
Family ID | 47880887 |
Filed Date | 2014-08-21 |
United States Patent
Application |
20140230733 |
Kind Code |
A1 |
MILLER; SETH ADRIAN |
August 21, 2014 |
GRAPHENE DEFECT ALTERATION
Abstract
Technologies are generally described for a method and system
configured effective to alter a defect area in a layer on a
substrate including graphene. An example method may include
receiving and heating the layer to produce a heated layer and
exposing the heated layer to a first gas to produce a first exposed
layer, where the first gas may include an amine. The method may
further include exposing the first exposed layer to a first inert
gas to produce a second exposed layer and exposing the second
exposed layer to a second gas to produce a third exposed layer
where the second gas may include an alane or a borane. Exposure of
the second exposed layer to the second gas may at least partially
alter the defect area.
Inventors: |
MILLER; SETH ADRIAN;
(ENGLEWOOD, CO) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
EMPIRE TECHNOLOGY DEVELOPMENT, LLC |
WILMINGTON |
DE |
US |
|
|
Assignee: |
EMPIRE TECHNOLOGY DEVELOPMENT,
LLC
WILMINGTON
DE
|
Family ID: |
47880887 |
Appl. No.: |
14/265991 |
Filed: |
April 30, 2014 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13377971 |
Dec 13, 2011 |
8747947 |
|
|
14265991 |
|
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Current U.S.
Class: |
118/724 ;
118/715 |
Current CPC
Class: |
B82Y 40/00 20130101;
C01B 32/186 20170801; C23C 16/00 20130101; C01B 32/194 20170801;
B82Y 30/00 20130101 |
Class at
Publication: |
118/724 ;
118/715 |
International
Class: |
C01B 31/04 20060101
C01B031/04 |
Claims
1. A system for at least partially altering one or more defects in
a layer on a substrate, wherein the layer comprises graphene, the
system comprising: a chamber configured to receive the layer,
wherein the layer comprises one or more defects in the graphene;
and a container configured to be in communication with the chamber;
wherein the chamber and the container are configured to expose the
layer to a gas, wherein the gas comprises hydrogen and at least one
of Boron (B), Aluminum (Al), Gallium (Ga), Indium (In) and Thallium
(Tl); and wherein exposure of the layer to the gas at least
partially alter the one or more defects in the graphene.
2. The system of claim 1, wherein the chamber and the container are
configured to expose the layer to the gas, wherein the gas
comprises one or more of a borane and an alane.
3. The system of claim 1, wherein: the gas is a first gas; and
wherein the chamber and the container are configured to expose the
layer to a second gas to produce an exposed layer, wherein the
second gas comprises an amine; and expose the exposed layer to the
first gas.
4. The system of claim 1, wherein: the gas is a first gas; and
wherein the chamber and the container are configured to expose the
layer to a second gas to produce an exposed layer, wherein the
second gas comprises an amine; and expose the exposed layer to the
first gas, wherein the first gas comprises one or more of a borane
and an alane.
5. The system of claim 1, wherein: the gas is a first gas; and
wherein the chamber and the container are configured to expose the
layer to a second gas to produce an exposed layer, wherein the
second gas comprises one or more of pyrrolidine, piperidine and
diethylamine; and expose the exposed layer to the first gas,
wherein the first gas comprises one or more of a borane and an
alane.
6. The system of claim 1, wherein the chamber and the container are
configured to expose the layer to the gas, wherein the gas
comprises at least one of diborane, 9-borabicyclo(3.3.1)nonane,
diisobutylaluminium hydride, and aluminum hydride.
7. The system of in claim 1, wherein the chamber and the container
are configured to expose the layer to piperidine to produce an
exposed layer; and expose the exposed layer to
9-borabicyclo(3.3.1)nonane.
8. The system of claim 1, wherein the chamber and the container are
configured to expose the layer to a second gas to produce a first
exposed layer, wherein the second gas comprises an amine; expose
the first exposed layer to a first inert gas to produce a second
exposed layer; expose the second exposed layer to the first gas to
produce a third exposed layer; and expose the third exposed layer
to a second inert gas to produce a fourth exposed layer.
9. The system of claim 1, further comprising: a heater in
communication with the chamber, wherein the heater is configured to
heat the layer to a temperature of about 150 degrees Celsius to
about 300 degrees Celsius.
10. The system of claim 1, wherein the gas is a first gas and the
system further comprises: a heater in communication with the
chamber, wherein the heater is configured to heat the layer to a
temperature of about 80 degrees Celsius to about 150 degrees
Celsius to produce a heated layer; and the chamber and the
container are configured to expose the heated layer to a second gas
to produce a first exposed layer, wherein the second gas comprises
an amine; expose the first exposed layer to a first inert gas to
produce a second exposed layer; expose the second exposed layer to
the first gas to produce a third exposed layer; expose the third
exposed layer to a second inert gas to produce a fourth exposed
layer; and the heater is configured to heat the fourth exposed
layer to a temperature of about 150 degrees Celsius to about 300
degrees Celsius.
11. The system of claim 1, wherein the gas is a first gas and the
system further comprises: a heater in communication with the
chamber, wherein the heater is configured to heat the layer to a
temperature of about 80 degrees Celsius to about 150 degrees
Celsius to produce a heated layer; the chamber and the container
are configured to expose the heated layer to a second gas to
produce a first exposed layer, wherein the second gas comprises an
amine; expose the first exposed layer to a first inert gas to
produce a second exposed layer; expose the second exposed layer to
the first gas to produce a third exposed layer, wherein the first
gas comprises one or more of an alane and a borane; expose the
third exposed layer to a second inert gas to produce a fourth
exposed layer; and the heater is configured to heat the fourth
exposed layer to a temperature of about 150 degrees Celsius to
about 300 degrees Celsius.
12. The system of claim 1, wherein the gas is a first gas and the
system further comprises: a heater in communication with the
chamber, wherein the heater is configured to heat the layer to a
temperature of about 80 degrees Celsius to about 150 degrees
Celsius to produce a heated layer; wherein the chamber and the
container are configured to expose the heated layer to a second gas
to produce a first exposed layer, wherein the second gas comprises
an amine; expose the first exposed layer to a first inert gas to
produce a second exposed layer; expose the second exposed layer to
the first gas to produce a third exposed layer, wherein the first
gas comprises at least one of diborane, 9-borabicyclo(3.3.1)nonane,
diisobutylaluminium hydride, and aluminum hydride; expose the third
exposed layer to a second inert gas to produce a fourth exposed
layer; and the heater is configured to heat the fourth exposed
layer to a temperature of about 150 degrees Celsius to about 300
degrees Celsius.
13. A chamber for at least partially altering one or more defects
in a layer on a substrate, wherein the layer comprises graphene,
the chamber comprising: an inlet port configured to receive a gas
into the chamber, wherein the gas comprises hydrogen and at least
one of Boron (B), Aluminum (Al), Gallium (Ga), Indium (In) and
Thallium (Tl), wherein the chamber is configured to receive the
layer, the layer comprising one or more defects in the graphene,
and to expose the layer to the gas to at least partially alter the
one or more defects in the graphene.
14. The chamber of claim 13, further comprising the substrate and
the layer on the substrate.
15. The chamber of claim 13, further comprising the gas.
16. The chamber of claim 13, further configured to be in
communication with a container, wherein the chamber and the
container are configured to expose the layer to the gas.
17. The chamber of claim 13, further configured to be in
communication with a heater, wherein the heater is configured to
heat the layer to a temperature of about 150 degrees Celsius to
about 300 degrees Celsius.
18. The chamber of claim 13, wherein the gas comprises one or more
of a borane and an alane.
19. The chamber of claim 13, wherein the gas comprises at least one
of diborane, 9-borabicyclo(3.3.1)nonane, diisobutylaluminium
hydride, and aluminum hydride.
20. The chamber of claim 13, wherein the gas is a first gas and the
inlet port is further configured to receive a second gas into the
chamber, wherein the second gas comprises an amine, and wherein
exposure of the layer to the second gas produces an exposed
layer.
21. The chamber of claim 18, wherein the gas is a first gas and the
inlet port is further configured to receive a second gas into the
chamber, wherein the second gas comprises an amine, and wherein
exposure of the layer to the second gas produces an exposed
layer.
22. The chamber of claim 18, wherein the gas is a first gas and the
inlet port is further configured to receive a second gas into the
chamber, wherein the second gas comprises one or more of
pyrrolidine, piperidine and diethylamine, and wherein exposure of
the layer to the second gas produces an exposed layer.
23. The chamber of claim 13, wherein the gas is a first gas and is
9-borabicyclo(3.3.1)nonane and the inlet port is further configured
to receive a second gas into the chamber, wherein the second gas
comprises piperidine, and wherein exposure of the layer to the
second gas produces an exposed layer.
24. The chamber of claim 13, wherein the gas is a first gas and the
inlet port is further configured to receive: a second gas into the
chamber, wherein the second gas comprises an amine, and wherein
exposure of the layer to the second gas produces a first exposed
layer; a first inert gas into the chamber, wherein exposure of the
first exposed layer to the first inert gas produces a second
exposed layer, and wherein exposure of the second exposed layer to
the first gas produces a third exposed layer; and a second inert
gas into the chamber, wherein exposure of the third exposed layer
to the second inert gas produces a fourth exposed layer.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The present application is related to the following listed
application(s): PCT Patent Application No. PCT/US2011/______
(Attorney Docket Number 1574-0041), entitled "GRAPHENE DEFECT
DETECTION" naming Seth Miller as inventor, filed DATE, MONTH, YEAR,
which is currently co-pending; and PCT/US2011/______ (Attorney
Docket Number 1574-0042), entitled "ALTERATION OF GRAPHENE
DEFECTS", naming Seth Miller and Thomas Yager as inventors, filed
DATE, MONTH, YEAR, which is currently co-pending.
BACKGROUND
[0002] Unless otherwise indicated herein, the materials described
in this section are not prior art to the claims in this application
and are not admitted to be prior art by inclusion in this
section.
[0003] Graphene is a material that generally may include a one atom
thick layer of bonded carbon atoms. Graphene may be formed by
growing carbon atoms on top of another material such as copper. The
copper may be inserted into a quartz tube, heated, and annealed. A
gas mixture of CH.sub.4 and H.sub.2 may then be flowed into the
tube and the copper may then be cooled with flowing H.sub.2 to form
graphene.
SUMMARY
[0004] In some examples, a method for at least partially altering a
defect area in a layer on a substrate is generally described. In
some examples, the method may include receiving the layer, where
the layer may include at least some graphene and at least some
defect areas in the graphene. The method may further include
exposing the layer to a gas where exposure of the layer to the gas
may at least partially alter the defect area. The gas may include
hydrogen and at least one of Boron (B), Aluminum (Al), Gallium
(Ga), Indium (In) and/or Thallium (Tl).
[0005] In some examples, a system effective to alter a defect area
in a layer on a substrate is generally described. In some examples,
the system may include a chamber and a container arranged in
communication with the chamber. The chamber may be configured
effective to receive a layer, where the layer may include at least
some defect areas in the graphene. The chamber and the container
may be configured effective to expose the layer to a gas where
exposure of the layer to the gas may be effective to at least
partially alter the defect area. The gas may include hydrogen and
at least one of Boron (B), Aluminum (Al), Gallium (Ga), Indium (In)
and/or Thallium (Tl).
[0006] In some examples, a chamber effective to at least partially
alter a defect area in a layer on a substrate is generally
described. In some examples, the chamber includes a layer, where
the layer may include at least some graphene. The chamber may
further include a gas where exposure of the layer to the gas may be
effective to at least partially alter the defect. The gas may
include hydrogen and at least one of Boron (B), Aluminum (Al),
Gallium (Ga), Indium (In) and/or Thallium (Tl).
[0007] The foregoing summary is illustrative only and is not
intended to be in any way limiting. In addition to the illustrative
aspects, embodiments, and features described above, further
aspects, embodiments, and features will become apparent by
reference to the drawings and the following detailed
description.
BRIEF DESCRIPTION OF THE FIGURES
[0008] The foregoing and other features of this disclosure will
become more fully apparent from the following description and
appended claims, taken in conjunction with the accompanying
drawings. Understanding that these drawings depict only several
embodiments in accordance with the disclosure and are, therefore,
not to be considered limiting of its scope, the disclosure will be
described with additional specificity and detail through use of the
accompanying drawings, in which:
[0009] FIG. 1 illustrates an example system that can be utilized to
implement graphene defect alteration;
[0010] FIG. 2 depicts a flow diagram for an example process for
implementing graphene defect alteration;
[0011] FIG. 3 illustrates a computer program product that can be
utilized to implement graphene defect alteration; and
[0012] FIG. 4 is a block diagram illustrating an example computing
device that is arranged to implement graphene defect
alteration;
[0013] all arranged according to at least some embodiments
described herein.
DETAILED DESCRIPTION
[0014] In the following detailed description, reference is made to
the accompanying drawings, which form a part hereof. In the
drawings, similar symbols typically identify similar components,
unless context dictates otherwise. The illustrative embodiments
described in the detailed description, drawings, and claims are not
meant to be limiting. Other embodiments may be utilized, and other
changes may be made, without departing from the spirit or scope of
the subject matter presented herein. It will be readily understood
that the aspects of the present disclosure, as generally described
herein, and illustrated in the Figures, can be arranged,
substituted, combined, separated, and designed in a wide variety of
different configurations, all of which are explicitly contemplated
herein.
[0015] This disclosure is generally drawn, inter alia, to systems,
methods, materials and apparatus related to graphene defect
alteration.
[0016] Briefly stated, technologies are generally described for a
method and system configured effective to alter a defect area in a
layer on a substrate including graphene. An example method may
include receiving and heating the layer to produce a heated layer
and exposing the heated layer to a first gas to produce a first
exposed layer, where the first gas may include an amine. The method
may further include exposing the first exposed layer to a first
inert gas to produce a second exposed layer and exposing the second
exposed layer to a second gas to produce a third exposed layer
where the second gas may include an alane or a borane. Exposure of
the second exposed layer to the second gas may at least partially
alter the defect area.
[0017] It will also be understood that any compound, material or
substance which is expressly or implicitly disclosed in the
specification and/or recited in a claim as belonging to a group or
structurally, compositionally and/or functionally related
compounds, materials or substances, includes individual
representatives of the group and all combinations thereof.
[0018] FIG. 1 illustrates an example system that can be utilized to
implement graphene defect alteration in accordance with at least
some embodiments described herein. An example graphene defect
alteration system 100 may include one or more chambers 112, one or
more containers 118, 126, 128, one or more heaters 174 and/or one
or more pumps 170. At least some of the elements of the defect
alteration system 100 may be arranged in communication with a
processor 184 through a communication link 186. In some examples,
processor 184 may be adapted in communication with a memory 188
that may include instructions 180 stored therein. Processor 184 may
be configured, such as by instructions 180, to control at least
some of the operations/actions/functions described below.
[0019] During a graphene formation process, defects or defect areas
may form on a layer 102 including graphene 106. Such defects may
result from impurities in the graphene formation process. For
example, chemical oxidation defects such as epoxides, carboxylic
acid functionalities, alcohols, and/or ketones may form on graphene
106 which may degrade an operation of the graphene in some
applications. For example, an electrical conductivity, chemical
inertness or mechanical properties of the graphene may be decreased
due to the presence of the defects. In an example, as shown at 136,
a layer 102 on a substrate 104 including graphene 106 may include
defect areas 108 and/or 110. As discussed in more detail below,
layer 102 may be exposed to a group IIIA hydride material in the
gas phase which may be effective to at least partially alter
defects 108 and/or 110.
[0020] As shown at 138, layer 102 may be placed, such as by hand or
machine, in a chamber 112. Layer 102 may be placed on a substrate
104. Chamber 112 may include ports 114, 116 and chamber 112 may be
in communication with pump 170 such as through valve 192, heater
174 and/or containers 118, 126, and/or 128 such as through valve
190. Chamber 112 may be any appropriate chamber such as, for
example, a chemical vapor deposition chamber or a molecular vapor
deposition chamber, such as a MVD 100E chamber. Container 118,
along with pump 170, may be configured (e.g., under control by a
controller such as processor 184) effective to expose layer 102 to
a gas 120. Gas 120 may include an amine such as pyrrolidine,
piperidine, diethylamine, etc. In an example, layer 102 may be
exposed to gas 120 at a pressure in a range between about 1 mtorr
and about 1 atmosphere, such as 0.1 atmospheres, at a temperature
in a range of about 35 degrees Celsius to about 150 degrees Celsius
for a time interval in a range of about 30 seconds to about 10
minutes. As shown at 140, after exposure of layer 102 with gas 120,
container 126, along with pump 170, may be configured to at least
partially remove gas 120 from chamber 112. For example, these
elements may be controlled to vacuum out chamber 112 and then pump
gas 122 into chamber 112 through port 116 to push gas 120 out of
chamber 114. For example, gas 122 may include an inert gas such as
helium, neon, nitrogen, argon, krypton, xenon, radon, etc.
[0021] As shown at 142, container 128, along with pump 170, may be
configured effective to expose layer 102 to a gas 124 where
exposure of the defect areas to the gas may be effective to alter
the defect areas into compounds more like graphene such as by
increasing the number of carbon atoms participating in
carbon-carbon double bonds, and produce altered defect areas 146,
148. Pump 170 may be configured to generate (or control) pressure
in chamber 112 that may be less than one atmosphere such as, for
example, in a range of about 1 mtorr to about 1 atmosphere, such as
0.1 atmospheres. Heater 174 may be configured (e.g., via a
controller such as processor 184) to heat chamber 112 to a
temperature in a range of about 80 degrees Celsius to about 250
degrees Celsius. Gas 124 may include hydrogen and a material
selected from column IIIA of the Periodic Table of Chemical
Elements such as Boron (B), Aluminum (Al), Gallium (Ga) Indium (In)
and/or Thallium (Tl). For example, gas 124 may include a borane
(B--H), or an alane (A-H), such as diborane (B.sub.2H.sub.6),
diisobutylaluminium hydride ("DIBALH"), 9-Borabicyclo(3.3.1)nonane
("9-BBN"), and/or aluminum hydride (AlH.sub.3). Exposure of a
borane or alane gas to the defect areas 108, 110, may allow for the
reduction of ketones, carboxylic acids, alcohols and/or epoxide
defects in the graphene 106 of layer 102. Adding gas 124 into
chamber 112 may increase a pressure in chamber 112 to about 0.1
atmospheres.
[0022] As shown at 144, after exposure of gas 124, container 126
and with pump 170 may be configured, such as via a controller such
as processor 184 to at least partially remove gas 124 from chamber
112. For example, these elements may be controlled to vacuum out
chamber 112 and then pump gas 122 into chamber 112 through port 116
to push gas 120 out of chamber 114. During the exposure of gas 122
at 144, heater 174 may be configured (e.g., via a controller such
as processor 184) effective to heat chamber 112 to a temperature in
a range of about 150 degrees Celsius to about 300 degrees Celsius
at a pressure of in a range of about 1 mtorr to about 1 atmosphere,
such as 0.1 atmospheres, for a time interval of about 1 minute to
about 15 minutes. In an example, an exposure of gas 122 and/or heat
from heater 174 may be effective to remove amine and/or borate on
layer 102 that may be remaining from the processes described at 138
and/or 142.
[0023] In an example, focusing again at 138, heater 174 may be
configured (e.g., via a controller such as processor 184) effective
to heat layer 102 to a temperature in a range of about 80 degrees
Celsius to about 150 degrees Celsius to reduce water in layer 102.
Pump 170 may be configured effective to generate a vacuum in
chamber 112, for example, a pressure in a range of 1 mtorr to about
1 atmosphere, such as 0.1 atmospheres. Container 118 may be
effective to store an amine gas 120, such as piperidine, at a
temperature in a range of about 15 degrees Celsius to about 25
degrees Celsius. Container 128 may be effective to store a borane
gas 124, such as 9-BBN, at a temperature in a range of about 80
degrees Celsius to about 100 degrees Celsius at a pressure in a
range of 1 mtorr to about 1 atmosphere, such as 0.1 atmospheres.
Container 118 may be configured effective to expose piperidine gas
120 to layer 102 for a time interval of about 30 seconds to about 5
minutes.
[0024] At 140, container 126 may be configured (e.g., via a
controller such as processor 184) effective to at least partially
remove gas 120 from chamber 112. For example, these elements may be
controlled to vacuum out chamber 112 and then pump gas 122, such as
nitrogen, into chamber 112 through port 116 to push gas 120 out of
chamber 114 for a time interval of about 30 seconds to about 3
minutes. In an example, these elements may operate at a pressure in
a range between about 1 mtorr and about 1 atmosphere, such as 0.1
atmospheres, at a temperature in a range of about 35 degrees
Celsius to about 150 degrees Celsius At 142, container 128 may be
configured effective to expose borane gas 124 to layer 102 for a
time interval that is in a range of about 2 minutes to about 10
minutes. At 144, container 126 may be configured effective to
expose gas 122 to layer 102 for a time interval that is in a range
of about 30 seconds to about 3 minutes. Heater 174 may be
configured effective to heat chamber 112 to a temperature in a
range of about 150 degrees Celsius to about 300 degrees
Celsius.
[0025] In an example where defect areas 108, 110 include carboxylic
acid functionalities, these acids may be reduced to aldehydes using
a DIBALH gas or to alcohols using 9-BBN or DIBALH. Alcohols may
react with borohydrides to produce borate esters which, in turn,
may form alkenes when heated. In examples where defect areas 108,
110 include ketones, a reaction of the ketone with an amine, such
as pyrrolidine, may form an enamine. Reaction of the enamine with
9-BBN may produce an amine-boron adduct. The adduct may then be
removed through the application of heat to produce a desired
alkene. In an example where defect areas 108, 110 include epoxides,
a borane may be exposed to the epoxy to produce a borate ester. The
borate ester, in turn, may be cleaved to produce a double bond in
response to the application of heat.
[0026] Among other potential benefits, a system arranged in
accordance with the present disclosure may be used to at least
partially alter defect areas in a layer on a substrate. Defect
areas in the layer may be altered even after graphene has been
transferred from a location from where the graphene was grown.
Graphene may be used in applications that may be sensitive to voids
or cracks such as technologies where graphene is used in
lithography as may occur in displays, microelectronic circuits,
electronic interconnects, and optical applications. A system
arranged in accordance with the present disclosure may be
implemented without toxic and/or flammable materials. As a gas may
be used, less impurities may be exposed to a layer than if a liquid
or solvent were used. As the processes described herein can take
place at relatively low temperatures below 300 degrees Celsius,
there is less chance of damaging a graphene layer by generating a
carbon vacancy. Described gases using boranes and alanes may be
used to alter a defect area in graphene and the gases may avoid
reacting with a substrate such as SiO.sub.2.
[0027] FIG. 2 depicts a flow diagram for an example process 200 for
altering a defect area in a layer in accordance with at least some
embodiments described herein. The process in FIG. 2 could be
implemented using, for example, system 100 discussed above, where
processor 184 may be adapted, via instructions, to control and
facilitate the various processing operations through interfaces as
will be further described with respect to FIG. 2. An example
process may include one or more operations, actions, or functions
as illustrated by one or more of blocks S2, S4, S6, S8, S10, S12
and/or S14. Although illustrated as discrete blocks, various blocks
may be divided into additional blocks, combined into fewer blocks,
or eliminated, depending on the desired implementation.
[0028] Process 200 may begin at block S2, "Receive the layer, the
layer may include at least some graphene and at least some defect
areas in the graphene." At block S2, a chamber may be configured
effective to receive a layer including at least some graphene and
at least some defect areas in the graphene.
[0029] Processing may continue from block S2 to block S4, "Heat the
layer to produce a heated layer." At block S4, the chamber may be
configured, such as via heater 174 under control by a controller
such as processor 184, to heat the layer. For example, the layer
may be heated to a temperature in a range of about 80 degrees
Celsius to about 150 degrees Celsius.
[0030] Processing may continue from block S4 to block S6, "Expose
the heated layer to a first gas to produce a first exposed layer."
At block S6, the chamber along with valves and a container
including the first gas, may be configured, such as, via control by
a controller such as processor 184, to expose the heated layer to a
first gas. In an example, the first gas may include an amine. In an
example the first gas may include at least one of pyrrolidine,
piperidine or diethylamine.
[0031] Processing may continue from block S6 to block S8, "Expose
the first exposed layer to a first inert gas to produce a second
exposed layer." At block S8, the chamber along with valves and a
container including the inert gas, may be configured, such as via
control by a controller such as processor 184, to expose the first
exposed layer to a first inert gas.
[0032] Processing may continue from block S8 to block S10, "Expose
the second exposed layer to a second gas to produce a third exposed
layer." At block S10, the chamber along with valves and a container
including the second gas, may be configured, such as via control by
a controller such as processor 184, to expose the second exposed
layer to a second gas. For example the second gas may include a
borane, an alane, diborane, 9-borabicyclo(3.3.1)nonane,
diisobutylaluminium hydride, or aluminum hydride.
[0033] Processing may continue from block S10 to block S12, "Expose
the third exposed layer to a second inert gas to produce a fourth
exposed layer." At block S12, the chamber along with valves and a
container including the second inert gas may be configured, such as
via control by a controller such as processor 184, to expose the
third exposed layer to a second inert gas to produce a fourth
exposed layer.
[0034] Processing may continue from block S12 to block S14, "Heat
the fourth exposed layer." At block S14, the chamber may be
configured, such as via heater 174 under control by controller such
as processor 184, to heat the fourth exposed layer. In an example,
the chamber may be configured to heat the fourth exposed layer to a
temperature in a range of about 150 degrees to Celsius to about 300
degrees Celsius.
[0035] FIG. 3 illustrates a computer program product that can be
utilized to implement graphene defect alteration in accordance with
at least some embodiments described herein. Program product 300 may
include a signal bearing medium 302. Signal bearing medium 302 may
include one or more instructions 304 that, when executed by, for
example, a processor, may provide the functionality described above
with respect to FIGS. 1-2. Thus, for example, referring to system
100, processor 184 may undertake one or more of the blocks shown in
FIG. 3 in response to instructions 304 conveyed to the system 100
by medium 302.
[0036] In some implementations, signal bearing medium 302 may
encompass a computer-readable medium 306, such as, but not limited
to, a hard disk drive, a Compact Disc (CD), a Digital Video Disk
(DVD), a digital tape, memory, etc. In some implementations, signal
bearing medium 302 may encompass a recordable medium 308, such as,
but not limited to, memory, read/write (R/W) CDs, R/W DVDs, etc. In
some implementations, signal bearing medium 302 may encompass a
communications medium 310, such as, but not limited to, a digital
and/or an analog communication medium (e.g., a fiber optic cable, a
waveguide, a wired communications link, a wireless communication
link, etc.). Thus, for example, program product 300 may be conveyed
to one or more modules of the system 100 by an RF signal bearing
medium 302, where the signal bearing medium 302 is conveyed by a
wireless communications medium 310 (e.g., a wireless communications
medium conforming with the IEEE 802.11 standard).
[0037] FIG. 4 is a block diagram illustrating an example computing
device that is arranged to implement graphene defect alteration
according to at least some embodiments described herein. In a very
basic configuration 402, computing device 400 typically includes
one or more processors 404 and a system memory 406. A memory bus
408 may be used for communicating between processor 404 and system
memory 406.
[0038] Depending on the desired configuration, processor 404 may be
of any type including but not limited to a microprocessor (.mu.P),
a microcontroller (.mu.C), a digital signal processor (DSP), or any
combination thereof. Processor 404 may include one more levels of
caching, such as a level one cache 410 and a level two cache 412, a
processor core 414, and registers 416. An example processor core
414 may include an arithmetic logic unit (ALU), a floating point
unit (FPU), a digital signal processing core (DSP Core), or any
combination thereof. An example memory controller 418 may also be
used with processor 404, or in some implementations memory
controller 418 may be an internal part of processor 404.
[0039] Depending on the desired configuration, system memory 406
may be of any type including but not limited to volatile memory
(such as RAM), non-volatile memory (such as ROM, flash memory,
etc.) or any combination thereof. System memory 406 may include an
operating system 420, one or more applications 422, and program
data 424. Application 422 may include a graphene defect alteration
algorithm 426 that is arranged to perform the various
functions/actions/operations as described herein including at least
those described with respect to system 100 of FIGS. 1-3. Program
data 424 may include graphene defect alteration data 428 that may
be useful for implementing graphene defect alteration as is
described herein. In some embodiments, application 422 may be
arranged to operate with program data 424 on operating system 420
such that graphene defect alteration may be provided. This
described basic configuration 402 is illustrated in FIG. 4 by those
components within the inner dashed line.
[0040] Computing device 400 may have additional features or
functionality, and additional interfaces to facilitate
communications between basic configuration 402 and any required
devices and interfaces. For example, a bus/interface controller 430
may be used to facilitate communications between basic
configuration 402 and one or more data storage devices 432 via a
storage interface bus 434. Data storage devices 432 may be
removable storage devices 436, non-removable storage devices 438,
or a combination thereof. Examples of removable storage and
non-removable storage devices include magnetic disk devices such as
flexible disk drives and hard-disk drives (HDD), optical disk
drives such as compact disk (CD) drives or digital versatile disk
(DVD) drives, solid state drives (SSD), and tape drives to name a
few. Example computer storage media may include volatile and
nonvolatile, removable and non-removable media implemented in any
method or technology for storage of information, such as computer
readable instructions, data structures, program modules, or other
data.
[0041] System memory 406, removable storage devices 436 and
non-removable storage devices 438 are examples of computer storage
media. Computer storage media includes, but is not limited to, RAM,
ROM, EEPROM, flash memory or other memory technology, CD-ROM,
digital versatile disks (DVD) or other optical storage, magnetic
cassettes, magnetic tape, magnetic disk storage or other magnetic
storage devices, or any other medium which may be used to store the
desired information and which may be accessed by computing device
400. Any such computer storage media may be part of computing
device 400.
[0042] Computing device 400 may also include an interface bus 440
for facilitating communication from various interface devices
(e.g., output devices 442, peripheral interfaces 444, and
communication devices 446) to basic configuration 402 via
bus/interface controller 430. Example output devices 442 include a
graphics processing unit 448 and an audio processing unit 450,
which may be configured to communicate to various external devices
such as a display or speakers via one or more A/V ports 452.
Example peripheral interfaces 444 include a serial interface
controller 454 or a parallel interface controller 456, which may be
configured to communicate with external devices such as input
devices (e.g., keyboard, mouse, pen, voice input device, touch
input device, etc.) or other peripheral devices (e.g., printer,
scanner, etc.) via one or more I/O ports 458. An example
communication device 446 includes a network controller 460, which
may be arranged to facilitate communications with one or more other
computing devices 462 over a network communication link via one or
more communication ports 464.
[0043] The network communication link may be one example of a
communication media. Communication media may typically be embodied
by computer readable instructions, data structures, program
modules, or other data in a modulated data signal, such as a
carrier wave or other transport mechanism, and may include any
information delivery media. A "modulated data signal" may be a
signal that has one or more of its characteristics set or changed
in such a manner as to encode information in the signal. By way of
example, and not limitation, communication media may include wired
media such as a wired network or direct-wired connection, and
wireless media such as acoustic, radio frequency (RF), microwave,
infrared (IR) and other wireless media. The term computer readable
media as used herein may include both storage media and
communication media.
[0044] Computing device 400 may be implemented as a portion of a
small-form factor portable (or mobile) electronic device such as a
cell phone, a personal data assistant (PDA), a personal media
player device, a wireless web-watch device, a personal headset
device, an application specific device, or a hybrid device that
include any of the above functions. Computing device 400 may also
be implemented as a personal computer including both laptop
computer and non-laptop computer configurations.
[0045] The present disclosure is not to be limited in terms of the
particular embodiments described in this application, which are
intended as illustrations of various aspects. Many modifications
and variations can be made without departing from its spirit and
scope, as will be apparent to those skilled in the art.
Functionally equivalent methods and apparatuses within the scope of
the disclosure, in addition to those enumerated herein, will be
apparent to those skilled in the art from the foregoing
descriptions. Such modifications and variations are intended to
fall within the scope of the appended claims. The present
disclosure is to be limited only by the terms of the appended
claims, along with the full scope of equivalents to which such
claims are entitled. It is to be understood that this disclosure is
not limited to particular methods, reagents, compounds compositions
or biological systems, which can, of course, vary. It is also to be
understood that the terminology used herein is for the purpose of
describing particular embodiments only, and is not intended to be
limiting.
[0046] With respect to the use of substantially any plural and/or
singular terms herein, those having skill in the art can translate
from the plural to the singular and/or from the singular to the
plural as is appropriate to the context and/or application. The
various singular/plural permutations may be expressly set forth
herein for sake of clarity.
[0047] It will be understood by those within the art that, in
general, terms used herein, and especially in the appended claims
(e.g., bodies of the appended claims) are generally intended as
"open" terms (e.g., the term "including" should be interpreted as
"including but not limited to," the term "having" should be
interpreted as "having at least," the term "includes" should be
interpreted as "includes but is not limited to," etc.). It will be
further understood by those within the art that if a specific
number of an introduced claim recitation is intended, such an
intent will be explicitly recited in the claim, and in the absence
of such recitation no such intent is present. For example, as an
aid to understanding, the following appended claims may contain
usage of the introductory phrases "at least one" and "one or more"
to introduce claim recitations. However, the use of such phrases
should not be construed to imply that the introduction of a claim
recitation by the indefinite articles "a" or "an" limits any
particular claim containing such introduced claim recitation to
embodiments containing only one such recitation, even when the same
claim includes the introductory phrases "one or more" or "at least
one" and indefinite articles such as "a" or "an" (e.g., "a" and/or
"an" should be interpreted to mean "at least one" or "one or
more"); the same holds true for the use of definite articles used
to introduce claim recitations. In addition, even if a specific
number of an introduced claim recitation is explicitly recited,
those skilled in the art will recognize that such recitation should
be interpreted to mean at least the recited number (e.g., the bare
recitation of "two recitations," without other modifiers, means at
least two recitations, or two or more recitations). Furthermore, in
those instances where a convention analogous to "at least one of A,
B, and C, etc." is used, in general such a construction is intended
in the sense one having skill in the art would understand the
convention (e.g., "a system having at least one of A, B, and C"
would include but not be limited to systems that have A alone, B
alone, C alone, A and B together, A and C together, B and C
together, and/or A, B, and C together, etc.). In those instances
where a convention analogous to "at least one of A, B, or C, etc."
is used, in general such a construction is intended in the sense
one having skill in the art would understand the convention (e.g.,
"a system having at least one of A, B, or C" would include but not
be limited to systems that have A alone, B alone, C alone, A and B
together, A and C together, B and C together, and/or A, B, and C
together, etc.). It will be further understood by those within the
art that virtually any disjunctive word and/or phrase presenting
two or more alternative terms, whether in the description, claims,
or drawings, should be understood to contemplate the possibilities
of including one of the terms, either of the terms, or both terms.
For example, the phrase "A or B" will be understood to include the
possibilities of "A" or "B" or "A and B."
[0048] In addition, where features or aspects of the disclosure are
described in terms of Markush groups, those skilled in the art will
recognize that the disclosure is also thereby described in terms of
any individual member or subgroup of members of the Markush
group.
[0049] As will be understood by one skilled in the art, for any and
all purposes, such as in terms of providing a written description,
all ranges disclosed herein also encompass any and all possible
subranges and combinations of subranges thereof. Any listed range
can be easily recognized as sufficiently describing and enabling
the same range being broken down into at least equal halves,
thirds, quarters, fifths, tenths, etc. As a non-limiting example,
each range discussed herein can be readily broken down into a lower
third, middle third and upper third, etc. As will also be
understood by one skilled in the art all language such as "up to,"
"at least," "greater than," "less than," and the like include the
number recited and refer to ranges which can be subsequently broken
down into subranges as discussed above. Finally, as will be
understood by one skilled in the art, a range includes each
individual member. Thus, for example, a group having 1-3 cells
refers to groups having 1, 2, or 3 cells. Similarly, a group having
1-5 cells refers to groups having 1, 2, 3, 4, or 5 cells, and so
forth.
[0050] While various aspects and embodiments have been disclosed
herein, other aspects and embodiments will be apparent to those
skilled in the art. The various aspects and embodiments disclosed
herein are for purposes of illustration and are not intended to be
limiting, with the true scope and spirit being indicated by the
following claims.
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