U.S. patent application number 14/178887 was filed with the patent office on 2014-08-14 for substrate processing apparatus and substrate processing method.
This patent application is currently assigned to DAINIPPON SCREEN MFG. CO., LTD.. The applicant listed for this patent is DAINIPPON SCREEN MFG. CO., LTD.. Invention is credited to Akihisa IWASAKI, Kenji IZUMOTO, Kenji KOBAYASHI, Takemitsu MIURA, Kazuhide SAITO.
Application Number | 20140227883 14/178887 |
Document ID | / |
Family ID | 51297726 |
Filed Date | 2014-08-14 |
United States Patent
Application |
20140227883 |
Kind Code |
A1 |
IZUMOTO; Kenji ; et
al. |
August 14, 2014 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
Abstract
In a substrate processing apparatus, an outer edge portion of a
substrate in a horizontal state is supported from below by an
annular substrate supporting part, and a lower surface facing part
having a facing surface facing a lower surface of the substrate is
provided inside the substrate supporting part. A gas ejection
nozzle for ejecting heated gas toward the lower surface is provided
in the lower surface facing part, and the substrate is heated by
the heated gas when an upper surface of the rotating substrate is
processed with a processing liquid ejected from an upper nozzle.
Further, a lower nozzle is provided in the lower surface facing
part, to thereby perform a processing on the lower surface with a
processing liquid. Since the gas ejection nozzle protrudes from the
facing surface, a flow of the processing liquid into the gas
ejection nozzle can be suppressed during the processing.
Inventors: |
IZUMOTO; Kenji; (Kyoto,
JP) ; MIURA; Takemitsu; (Kyoto, JP) ;
KOBAYASHI; Kenji; (Kyoto, JP) ; SAITO; Kazuhide;
(Kyoto, JP) ; IWASAKI; Akihisa; (Kyoto,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
DAINIPPON SCREEN MFG. CO., LTD. |
Kyoto |
|
JP |
|
|
Assignee: |
DAINIPPON SCREEN MFG. CO.,
LTD.
Kyoto
JP
|
Family ID: |
51297726 |
Appl. No.: |
14/178887 |
Filed: |
February 12, 2014 |
Current U.S.
Class: |
438/745 ;
156/345.37 |
Current CPC
Class: |
H01L 21/30604 20130101;
H01L 21/67109 20130101; H01L 21/67023 20130101; H01L 21/02052
20130101; H01L 21/68792 20130101; H01L 21/6708 20130101; H01L
21/67028 20130101; H01L 21/67126 20130101 |
Class at
Publication: |
438/745 ;
156/345.37 |
International
Class: |
H01L 21/67 20060101
H01L021/67; H01L 21/306 20060101 H01L021/306 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 14, 2013 |
JP |
P2013-026224 |
Feb 15, 2013 |
JP |
P2013-027387 |
Claims
1. A substrate processing apparatus for processing a substrate,
comprising: an annular supporting part having an annular shape
around a central axis directed in a vertical direction, for
supporting an outer edge portion of a substrate in a horizontal
state from below; a lower surface facing part having a facing
surface which faces a lower surface of said substrate inside said
annular supporting part; a rotating mechanism for rotating said
annular supporting part together with said substrate around said
central axis relatively to said lower surface facing part; a first
processing liquid supply part for supplying a first processing
liquid onto an upper surface of said substrate; a second processing
liquid supply part for supplying a second processing liquid onto
said lower surface of said substrate from a processing liquid
nozzle provided at said lower surface facing part; and at least one
gas ejection nozzle protruding from said facing surface, for
ejecting heated gas toward said lower surface of said
substrate.
2. The substrate processing apparatus according to claim 1, wherein
said facing surface is a sloped surface which gets farther away
from said substrate as a distance from said central axis becomes
larger.
3. The substrate processing apparatus according to claim 1, wherein
a distance between said at least one gas ejection nozzle and said
lower surface of said substrate is not larger than 8 mm in a
direction of said central axis.
4. The substrate processing apparatus according to claim 1, wherein
said at least one gas ejection nozzle is inclined with respect to
said central axis.
5. The substrate processing apparatus according to claim 1, wherein
said at least one gas ejection nozzle includes a plurality of gas
ejection nozzles, and a distance between an ejection port of one
gas ejection nozzle out of said plurality of gas ejection nozzles
and said central axis is different from that between an ejection
port of another gas ejection nozzle and said central axis.
6. The substrate processing apparatus according to claim 1, further
comprising: a sealed space forming part forming an internal space
which is sealed, in which a processing on said substrate with said
first processing liquid and said second processing liquid is
performed.
7. The substrate processing apparatus according to claim 2, wherein
said at least one gas ejection nozzle includes a plurality of gas
ejection nozzles, and a distance between an ejection port of one
gas ejection nozzle out of said plurality of gas ejection nozzles
and said central axis is different from that between an ejection
port of another gas ejection nozzle and said central axis.
8. The substrate processing apparatus according to claim 3, wherein
said at least one gas ejection nozzle includes a plurality of gas
ejection nozzles, and a distance between an ejection port of one
gas ejection nozzle out of said plurality of gas ejection nozzles
and said central axis is different from that between an ejection
port of another gas ejection nozzle and said central axis.
9. The substrate processing apparatus according to claim 4, wherein
said at least one gas ejection nozzle includes a plurality of gas
ejection nozzles, and a distance between an ejection port of one
gas ejection nozzle out of said plurality of gas ejection nozzles
and said central axis is different from that between an ejection
port of another gas ejection nozzle and said central axis.
10. The substrate processing apparatus according to claim 6,
wherein said at least one gas ejection nozzle includes a plurality
of gas ejection nozzles, and a distance between an ejection port of
one gas ejection nozzle out of said plurality of gas ejection
nozzles and said central axis is different from that between an
ejection port of another gas ejection nozzle and said central
axis.
11. A substrate processing apparatus for processing a substrate,
comprising: a sealed space forming part forming an internal space
which is sealed; a sealed space opening and closing mechanism for
moving a movable part which is part of said sealed space forming
part relatively to the other portion, to thereby open and close
said sealed space forming part; a substrate holding part disposed
in said sealed space forming part, for holding a substrate in a
horizontal state; a chemical liquid supply part for supplying a
chemical liquid onto an upper surface of said substrate; an inert
gas supply part for supplying an inert gas into said internal
space; a gas exhaust part for exhausting gas from said internal
space; and a control part for controlling said inert gas supply
part to supply said inert gas into said internal space while
controlling said gas exhaust part to exhaust gas from said internal
space, to thereby bring said internal space which is sealed into an
inert gas filled state, and for stopping supply of said inert gas
into said internal space and exhaust of gas from said internal
space when controlling said chemical liquid supply part to supply
said chemical liquid onto said substrate in said inert gas filled
state.
12. The substrate processing apparatus according to claim 11,
further comprising: a top plate extending along said upper surface
so as to cover said substrate above said substrate, which goes
close to said upper surface when said chemical liquid supply part
supplies said chemical liquid onto said substrate; and a nozzle for
supplying said chemical liquid from said chemical liquid supply
part to between said top plate and said upper surface.
13. The substrate processing apparatus according to claim 11,
wherein said control part stops supply of said inert gas into said
internal space and exhaust of gas from said internal space before
starting supply of said chemical liquid onto substrate.
14. The substrate processing apparatus according to claim 11,
further comprising: a rinse liquid supply part for supplying a
rinse liquid onto said upper surface of said substrate after supply
of said chemical liquid onto said substrate by said chemical liquid
supply part is finished.
15. The substrate processing apparatus according to claim 14,
wherein said control part controls said gas exhaust part to exhaust
gas from said internal space after finishing supply of said
chemical liquid onto said substrate and before starting supply of
said rinse liquid onto said substrate.
16. A substrate processing method of processing a substrate in a
substrate processing apparatus, wherein said substrate processing
apparatus comprises: a sealed space forming part forming an
internal space which is sealed; a sealed space opening and closing
mechanism for moving a movable part which is part of said sealed
space forming part relatively to the other portion, to thereby open
and close said sealed space forming part; a substrate holding part
disposed in said sealed space forming part, for holding a substrate
in a horizontal state; a chemical liquid supply part for supplying
a chemical liquid onto an upper surface of said substrate; an inert
gas supply part for supplying an inert gas into said internal
space; and a gas exhaust part for exhausting gas from said internal
space, said substrate processing method comprising: a) supplying
said inert gas into said internal space by said inert gas supply
part while exhausting gas from said internal space by said gas
exhaust part, to thereby bring said internal space which is sealed
into an inert gas filled state; and b) supplying said chemical
liquid onto said substrate in said inert gas filled state by said
chemical liquid supply part, wherein supply of said inert gas into
said internal space and exhaust of gas from said internal space are
stopped when said chemical liquid is supplied onto said substrate
in said operation b).
17. The substrate processing method according to claim 16, wherein
supply of said inert gas into said internal space and exhaust of
gas from said internal space are stopped before starting supply of
said chemical liquid onto said substrate in said operation b).
18. The substrate processing method according to claim 16, further
comprising: c) supplying a rinse liquid onto said upper surface of
said substrate by a rinse liquid supply part after said operation
b).
19. The substrate processing method according to claim 18, further
comprising: exhausting gas from said internal space by said gas
exhaust part between said operation b) and said operation c).
Description
TECHNICAL FIELD
[0001] The present invention relates to a substrate processing
apparatus and a substrate processing method.
BACKGROUND ART
[0002] In a process of manufacturing a semiconductor substrate
(hereinafter, referred to simply as a "substrate"), conventionally,
various processings are performed on a substrate by using a
substrate processing apparatus. Japanese Patent Application
Laid-Open No. 2004-158588 (Document 1), for example, discloses a
substrate processing apparatus capable of removing organic
substances deposited on a substrate by using a removal liquid. In
the substrate processing apparatus, by supplying
temperature-controlled nitrogen gas onto a back surface of the
substrate from a back-surface side gas nozzle before supplying the
removal liquid onto the substrate from a removal liquid nozzle, a
temperature of the substrate becomes close to that of the removal
liquid. It is thereby possible to make the temperature of the
removal liquid flowing on a surface of the substrate almost uniform
on the entire surface of the substrate and improve the inplane
uniformity of the processing of removing the organic
substances.
[0003] In another example, by supplying a chemical liquid onto a
substrate having a surface on which a resist pattern is formed, a
processing such as etching or the like is performed on the surface
of the substrate. Further, Japanese Patent Application Laid-Open
No. 2002-305177 (Document 2) discloses a substrate processing
apparatus for processing a substrate having a surface on which a
thin film formed thereon is patterned by dry etching with a resist
film as a mask, and the substrate processing apparatus is capable
of removing reaction products formed on the surface of the
substrate by using a removal liquid. In the substrate processing
apparatus of Document 2, a cup for capturing the removal liquid
scattered from the substrate being rotated is provided, and by
reducing the exhaust of atmosphere in the cup in removing the
reaction products with the removal liquid, it is possible to
effectively prevent deterioration in the removal capability for the
reaction products due to vaporization of water from the removal
liquid, or the like.
[0004] In the substrate processing apparatus of Document 1, which
includes a vacuum chuck having an adsorption surface and holds the
substrate by adsorption with the vacuum chuck, it is impossible to
perform any processing onto an entire lower surface of the
substrate by using a processing liquid. Further, in a configuration
in which a gas ejection nozzle facing the lower surface of the
substrate is provided and a processing liquid is supplied onto the
lower surface, in order to prevent any failure of the gas ejection
nozzle due to a flow of the processing liquid into the gas ejection
nozzle, required is a technique for suppressing the flow of the
processing liquid into the gas ejection nozzle.
[0005] On the other hand, in the apparatus in which a processing is
performed in the cup, like in Document 2, if gas containing a
chemical liquid component is diffused out of the cup, there is a
possible that the gas may have some effect on devices and the like
disposed around the cup, and accordingly it is absolutely necessary
to exhaust the atmosphere in the cup. Therefore, there is a
limitation in suppressing the vaporization of the chemical liquid
by reducing the exhaust. Actually, since there occurs a decrease in
the temperature especially at an outer edge portion of the
substrate, it is impossible to improve the uniformity of the
processing using the chemical liquid.
SUMMARY OF INVENTION
[0006] The present invention is intended for a substrate processing
apparatus for processing a substrate, and in a substrate processing
apparatus in which an upper surface of a substrate is processed
with a processing liquid while the substrate is heated with heated
gas ejected from a gas ejection nozzle, it is an object of the
present invention to perform a processing onto a lower surface of
the substrate with a processing liquid and further to suppress a
flow of the processing liquid into the gas ejection nozzle during
the processing. It is another object of the present invention to
perform uniform processing onto the upper surface of the
substrate.
[0007] The substrate processing apparatus according to one aspect
of the present invention includes an annular supporting part having
an annular shape around a central axis directed in a vertical
direction, for supporting an outer edge portion of a substrate in a
horizontal state from below, a lower surface facing part having a
facing surface which faces a lower surface of the substrate inside
the annular supporting part, a rotating mechanism for rotating the
annular supporting part together with the substrate around the
central axis relatively to the lower surface facing part, a first
processing liquid supply part for supplying a first processing
liquid onto an upper surface of the substrate, a second processing
liquid supply part for supplying a second processing liquid onto
the lower surface of the substrate from a processing liquid nozzle
provided at the lower surface facing part, and at least one gas
ejection nozzle protruding from the facing surface, for ejecting
heated gas toward the lower surface of the substrate. By the
present invention, in the substrate processing apparatus in which
the upper surface of the substrate is processed with the first
processing liquid while the substrate is heated with heated gas
ejected from the gas ejection nozzle, it is possible to perform a
processing onto the lower surface of the substrate with the second
processing liquid and further to suppress a flow of the second
processing liquid into the gas ejection nozzle during the
processing.
[0008] Preferably, the facing surface is a sloped surface which
gets farther away from the substrate as a distance from the central
axis becomes larger. It is thereby possible to easily guide the
second processing liquid toward the outer side of the facing
surface. Further, the at least one gas ejection nozzle includes a
plurality of gas ejection nozzles, and a distance between an
ejection port of one gas ejection nozzle out of the plurality of
gas ejection nozzles and the central axis may be different from
that between an ejection port of another gas ejection nozzle and
the central axis. It is thereby possible to heat a wide range of
the substrate.
[0009] The substrate processing apparatus according to another
aspect of the present invention includes a sealed space forming
part forming an internal space which is sealed, a sealed space
opening and closing mechanism for moving a movable part which is
part of the sealed space forming part relatively to the other
portion, to thereby open and close the sealed space forming part, a
substrate holding part disposed in the sealed space forming part,
for holding a substrate in a horizontal state, a chemical liquid
supply part for supplying a chemical liquid onto an upper surface
of the substrate, an inert gas supply part for supplying an inert
gas into the internal space, a gas exhaust part for exhausting gas
from the internal space, and a control part for controlling the
inert gas supply part to supply the inert gas into the internal
space while controlling the gas exhaust part to exhaust gas from
the internal space, to thereby bring the internal space which is
sealed into an inert gas filled state, and for stopping supply of
the inert gas into the internal space and exhaust of gas from the
internal space when controlling the chemical liquid supply part to
supply the chemical liquid onto the substrate in the inert gas
filled state. By the substrate processing apparatus, it is possible
to perform uniform processing onto the upper surface of the
substrate.
[0010] Preferably, the substrate processing apparatus further
includes a top plate extending along the upper surface so as to
cover the substrate above the substrate, which goes close to the
upper surface when the chemical liquid supply part supplies the
chemical liquid onto the substrate, and a nozzle for supplying the
chemical liquid from the chemical liquid supply part to between the
top plate and the upper surface. It is thereby possible to perform
more uniform processing onto the upper surface of the
substrate.
[0011] Further, the control part may stop supply of the inert gas
into the internal space and exhaust of gas from the internal space
before starting supply of the chemical liquid onto substrate. It is
thereby possible to more reliably block the flow of gas into/out of
the internal space when the supply of the chemical liquid onto the
substrate is started.
[0012] The present invention is also intended for a substrate
processing method of processing a substrate in a substrate
processing apparatus. In the substrate processing method according
to the present invention, the substrate processing apparatus
includes a sealed space forming part forming an internal space
which is sealed, a sealed space opening and closing mechanism for
moving a movable part which is part of the sealed space forming
part relatively to the other portion, to thereby open and close the
sealed space forming part, a substrate holding part disposed in the
sealed space forming part, for holding a substrate in a horizontal
state, a chemical liquid supply part for supplying a chemical
liquid onto an upper surface of the substrate, an inert gas supply
part for supplying an inert gas into the internal space, and a gas
exhaust part for exhausting gas from the internal space, and the
substrate processing method includes a) supplying the inert gas
into the internal space by the inert gas supply part while
exhausting gas from the internal space by the gas exhaust part, to
thereby bring the internal space which is sealed into an inert gas
filled state, and b) supplying the chemical liquid onto the
substrate in the inert gas filled state by the chemical liquid
supply part, and in the substrate processing method, supply of the
inert gas into the internal space and exhaust of gas from the
internal space are stopped when the chemical liquid is supplied
onto the substrate in the operation b).
[0013] These and other objects, features, aspects and advantages of
the present invention will become more apparent from the following
detailed description of the present invention when taken in
conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF DRAWINGS
[0014] FIG. 1 is a cross-sectional view showing a substrate
processing apparatus in accordance with a first preferred
embodiment;
[0015] FIG. 2 is a block diagram showing a gas-liquid supply part
and a gas-liquid exhaust part;
[0016] FIGS. 3 and 4 are cross-sectional views each showing part of
the substrate processing apparatus;
[0017] FIG. 5 is a view showing an arrangement of gas ejection
nozzles in a lower surface facing part;
[0018] FIG. 6 is a flowchart showing an operation flow of the
substrate processing apparatus;
[0019] FIG. 7 is a graph showing an experimental result on
etching;
[0020] FIG. 8 is a view showing another exemplary arrangement of
the gas ejection nozzles in the lower surface facing part;
[0021] FIG. 9 is a view showing still another exemplary arrangement
of the gas ejection nozzles in the lower surface facing part;
[0022] FIG. 10 is a cross-sectional view showing a substrate
processing apparatus in accordance with a second preferred
embodiment;
[0023] FIG. 11 is a block diagram showing a processing liquid
supply part, an inert gas supply part, and a gas-liquid exhaust
part;
[0024] FIGS. 12 and 13 are cross-sectional views each showing part
of the substrate processing apparatus;
[0025] FIG. 14 is a flowchart showing an operation flow of the
substrate processing apparatus;
[0026] FIG. 15 is a timing chart showing operation timings of
constituent elements in the substrate processing apparatus; and
[0027] FIG. 16 is a graph showing an experimental result on
etching.
DESCRIPTION OF EMBODIMENTS
[0028] FIG. 1 is a cross-sectional view showing a substrate
processing apparatus 1 in accordance with the first preferred
embodiment of the present invention. The substrate processing
apparatus 1 is a single-substrate processing apparatus for
supplying a processing liquid to a semiconductor substrate 9
(hereinafter, referred to simply as a "substrate 9") having a
substantially disk-like shape, to thereby process substrates 9 one
by one. In FIG. 1, hatching of the cross sections of some
constituent elements in the substrate processing apparatus 1 is
omitted (the same applies to other cross-sectional views).
[0029] The substrate processing apparatus 1 includes a chamber 12,
a top plate 123, a chamber opening and closing mechanism 131, a
substrate holding part 14, a substrate rotating mechanism 15, a
liquid receiving part 16, and a cover 17.
[0030] The chamber 12 includes a chamber body 121 and a chamber
cover 122. The chamber body 121 and the chamber cover 122 are each
formed of a non-magnetic material. The chamber body 121 includes a
chamber bottom 210 and a chamber sidewall 214. The chamber bottom
210 includes a center portion 211 having a substantially disk-like
shape, an inner sidewall 212 having a cylindrical shape extending
downward from an outer edge portion of the center portion 211, and
a base part 213 extending from the inner sidewall 212 outward in a
radial direction. The chamber sidewall 214 has an annular shape
around a central axis J1 directed in a vertical direction,
protruding upward from a middle portion of the base part 213 in the
radial direction. A member forming the chamber sidewall 214 also
serves as part of the liquid receiving part 16, as described later.
In the following description, a space surrounded by the chamber
sidewall 214, the inner sidewall 212, and the base part 213 is
referred to as a lower annular space 217. When the substrate 9 is
supported by a substrate supporting part 141 (described later) of
the substrate holding part 14, a lower surface 92 of the substrate
9 faces an upper surface 211a of the center portion 211. In the
following description, the center portion 211 of the chamber bottom
210 is referred to as a "lower surface facing part 211", and the
upper surface 211a of the center portion 211 is referred to as a
"facing surface 211a". The detail of the lower surface facing part
211 will be described.
[0031] The chamber cover 122 has a substantially disk-like shape
perpendicular to the central axis J1, including an upper portion of
the chamber 12. The chamber cover 122 closes an upper opening of
the chamber body 121. FIG. 1 shows a state where the chamber cover
122 is separated from the chamber body 121. When the chamber cover
122 closes the upper opening of the chamber body 121, an outer edge
portion of the chamber cover 122 comes into contact with an upper
portion of the chamber sidewall 214.
[0032] The chamber opening and closing mechanism 131 moves the
chamber cover 122 which is a movable part of the chamber 12
relatively to the chamber body 121 which is the other portion of
the chamber 12 in the vertical direction. The chamber opening and
closing mechanism 131 serves as a cover up-and-down moving
mechanism for moving the chamber cover 122 up and down. When the
chamber opening and closing mechanism 131 moves the chamber cover
122 in the vertical direction, the top plate 123 is also moved,
together with the chamber cover 122, in a certain range in the
vertical direction. When the chamber cover 122 comes into contact
with the chamber body 121 to close the upper opening thereof and
the chamber cover 122 is pressed toward the chamber body 121, an
internal space (see FIG. 4 described later) which is sealed is
formed inside the chamber 12.
[0033] The substrate holding part 14 is disposed in the chamber 12
and holds the substrate 9 in a horizontal state. In other words,
the substrate 9 is held by the substrate holding part 14, in a
state where an upper surface 91 thereof is directed upward, being
perpendicular to the central axis J1. The substrate holding part 14
includes the above-described substrate supporting part 141 for
supporting an outer edge portion of the substrate 9 from below and
a substrate retaining part 142 for retaining the outer edge portion
of the substrate 9 from above, which is supported by the substrate
supporting part 141. The substrate supporting part 141 includes a
supporting part base 413 having a substantially annular disk-like
shape around the central axis J1 and a plurality of first contact
parts 411 fixed to an upper surface of the supporting part base
413. The substrate retaining part 142 includes a plurality of
second contact parts 421 fixed to a lower surface of the top plate
123. Positions of the plurality of second contact parts 421 in a
circumferential direction are actually different from those of the
plurality of first contact parts 411 in the circumferential
direction.
[0034] The top plate 123 has a substantially disk-like shape
perpendicular to the central axis J1. The top plate 123 is disposed
below the chamber cover 122 and above the substrate supporting part
141. The top plate 123 has an opening at its center portion. When
the substrate 9 is supported by the substrate supporting part 141,
the upper surface 91 of the substrate 9 faces the lower surface of
the top plate 123 which is perpendicular to the central axis J1. A
diameter of the top plate 123 is larger than that of the substrate
9, and an outer edge portion of the top plate 123 is positioned
outer than the outer edge portion of the substrate 9 in the radial
direction all around the circumference.
[0035] In the state of FIG. 1, the top plate 123 is supported by
the chamber cover 122. In more detail, on a lower surface of the
chamber cover 122, a plate holding part 222 having an annular shape
is provided. The plate holding part 222 includes a cylindrical
portion 223 having a substantially cylindrical shape around the
central axis J1 and a flange portion 224 having a substantially
annular shape around the central axis J1. The cylindrical portion
223 extends downward from the lower surface of the chamber cover
122. The flange portion 224 extends from a lower end of the
cylindrical portion 223 outward in the radial direction.
[0036] The top plate 123 includes a held part 237 having an annular
shape. The held part 237 includes a cylindrical portion 238 having
a substantially cylindrical shape around the central axis J1 and a
flange portion 239 having a substantially annular shape around the
central axis J1. The cylindrical portion 238 extends upward from an
upper surface of the top plate 123. The flange portion 239 extends
from an upper end of the cylindrical portion 238 inward in the
radial direction. The cylindrical portion 238 is positioned outer
than the cylindrical portion 223 of the plate holding part 222 in
the radial direction and faces the cylindrical portion 223 in the
radial direction. The flange portion 239 is positioned above the
flange portion 224 of the plate holding part 222 and faces the
flange portion 224 in the vertical direction. When a lower surface
of the flange portion 239 of the held part 237 comes into contact
with an upper surface of the flange portion 224 of the plate
holding part 222, the top plate 123 is attached to the chamber
cover 122, being suspended from the chamber cover 122.
[0037] The substrate rotating mechanism 15 of FIG. 1 is a so-called
hollow motor. The substrate rotating mechanism 15 includes a stator
part 151 having an annular shape around the central axis J1 and a
rotor part 152 having an annular shape. The rotor part 152 includes
a permanent magnet having a substantially annular shape. A surface
of the permanent magnet is molded of a PTFE
(polytetrafluoroethylene) resin. The rotor part 152 is disposed
inside the lower annular space 217 in the internal space of the
chamber 12. Above the rotor part 152, attached is the supporting
part base 413 of the substrate supporting part 141 with a
connecting member interposed therebetween. The supporting part base
413 is disposed above the rotor part 152.
[0038] The stator part 151 is disposed in the periphery of the
rotor part 152 outside the chamber 12 (in other words, outside the
internal space), i.e., disposed outer in the radial direction. In
the present preferred embodiment, the stator part 151 is fixed to
the base part 213 and positioned below the liquid receiving part
16. The stator part 151 includes a plurality of coils arranged in
the circumferential direction around the central axis J1.
[0039] By supplying current to the stator part 151, a rotating
force is generated around the central axis J1 between the stator
part 151 and the rotor part 152. The rotor part 152 is thereby
rotated in a horizontal state around the central axis J1. With a
magnetic force exerted between the stator part 151 and the rotor
part 152, the rotor part 152 floats in the chamber 12, not being in
direct or indirect contact with the chamber 12, and rotates the
substrate 9, being in a floating state, together with the substrate
supporting part 141 around the central axis J1.
[0040] The liquid receiving part 16 includes a cup part 161 and a
cup moving mechanism 162. As described earlier, part of the member
forming the chamber sidewall 214 is included in the liquid
receiving part 16. The cup part 161 has an annular shape around the
central axis J1 and is positioned outer than the chamber sidewall
214 in the radial direction. The cup moving mechanism 162 moves the
cup part 161 in the vertical direction.
[0041] A lower portion of the cup part 161 is positioned inside a
liquid receiving recessed portion 165 which has an annular shape
and is positioned outer than the chamber sidewall 214. At an upper
end portion of an outer wall 168 having a substantially cylindrical
shape surrounding an outer periphery of the liquid receiving
recessed portion 165, an outer seal part 169 having a substantially
annular disk-like shape around the central axis J1 is fixed. The
outer seal part 169 extends from the upper end portion of the outer
wall 168 inward in the radial direction, to cover an outer
peripheral portion of an upper opening of the liquid receiving
recessed portion 165 all around the circumference.
[0042] An upper nozzle 181 is fixed to a center portion of the
chamber cover 122. The upper nozzle 181 is insertable into the
opening of the center portion of the top plate 123. At a center
portion of the lower surface facing part 211 of the chamber bottom
210, a lower nozzle 182 is attached. At the lower surface facing
part 211, a plurality of gas ejection nozzles 180 are further
attached. A bottom portion of the liquid receiving recessed portion
165 is connected to a first exhaust path 191. A bottom portion of
the lower annular space 217 between the inner sidewall 212 and the
chamber sidewall 214 is connected to a second exhaust path 192. The
positions for attachment of the upper nozzle 181 and the lower
nozzle 182 are not necessarily limited to the center portion, but
may be, for example, positions facing a peripheral portion of the
substrate 9. Arrangement of the plurality of gas ejection nozzles
180 will be described later.
[0043] FIG. 2 is a block diagram showing a gas-liquid supply part
18 and a gas-liquid exhaust part 19 included in the substrate
processing apparatus 1. The gas-liquid supply part 18 includes a
chemical liquid supply part 183, a deionized water supply part 184,
an IPA supply part 185, an inert gas supply part 186, and a heated
gas supply part 187, besides the gas ejection nozzles 180, the
upper nozzle 181, and the lower nozzle 182 described above. The
chemical liquid supply part 183, the deionized water supply part
184, and the IPA supply part 185 are each connected to the upper
nozzle 181 with a valve interposed therebetween. The lower nozzle
182 is connected to the deionized water supply part 184 with a
valve interposed therebetween. The upper nozzle 181 is also
connected to the inert gas supply part 186 with a valve interposed
therebetween. The upper nozzle 181 has a liquid ejection port at
its center portion and has a gas ejection (jet) port therearound.
Therefore, exactly, part of the upper nozzle 181 is part of a gas
supply part for supplying gas into the chamber 12 in a broad sense.
The lower nozzle 182 has a liquid ejection port at its center
portion. The plurality of gas ejection nozzles 180 are connected to
the heated gas supply part 187 with a valve interposed
therebetween.
[0044] The first exhaust path 191 connected to the liquid receiving
recessed portion 165 of the liquid receiving part 16 is connected
to a gas-liquid separating part 193. The gas-liquid separating part
193 is connected to an outer gas exhaust part 194, a chemical
liquid collecting part 195, and a liquid exhaust (drain) part 196
each with a valve interposed therebetween. The second exhaust path
192 connected to the chamber bottom 210 is connected to a
gas-liquid separating part 197. The gas-liquid separating part 197
is connected to an inner gas exhaust part 198 and a liquid exhaust
part 199 each with a valve interposed therebetween. The constituent
elements in the gas-liquid supply part 18 and the gas-liquid
exhaust part 19 are controlled by a control part 10. The chamber
opening and closing mechanism 131, the substrate rotating mechanism
15, and the cup moving mechanism 162 (see FIG. 1) are also
controlled by the control part 10.
[0045] In the present preferred embodiment, a chemical liquid
supplied from the chemical liquid supply part 183 onto the
substrate 9 through the upper nozzle 181 is an etching solution
such as hydrofluoric acid, a tetramethylammonium hydroxide
solution, or the like. The deionized water supply part 184 supplies
deionized water (DIW) onto the substrate 9 through the upper nozzle
181 or the lower nozzle 182. The IPA supply part 185 supplies
isopropyl alcohol (IPA) onto the substrate 9 through the upper
nozzle 181. In the substrate processing apparatus 1, a processing
liquid supply part for supplying any processing liquid other than
the above processing liquids may be provided. Further, the inert
gas supply part 186 supplies an inert gas into the chamber 12
through the upper nozzle 181. The heated gas supply part 187
supplies heated gas (e.g., a high-temperature inert gas heated up
to 120 to 130 degrees C.) onto the lower surface 92 of the
substrate 9 through the plurality of gas ejection nozzles 180. In
the present preferred embodiment, the gas used in the inert gas
supply part 186 and the heated gas supply part 187 is nitrogen gas
(N.sub.2), but any gas other than nitrogen gas may be used. In the
case where the heated inert gas is used in the heated gas supply
part 187, the explosion-proof countermeasure in the substrate
processing apparatus 1 can be simplified or is not needed.
[0046] As shown in FIG. 1, the cup part 161 includes a sidewall
611, an upper surface part 612, and a lower surface part 613. The
sidewall 611 has a substantially cylindrical shape around the
central axis J1. The upper surface part 612 has a substantially
annular disk-like shape around the central axis J1, extending from
an upper end portion of the sidewall 611 inward in the radial
direction. The lower surface part 613 has substantially annular
disk-like shape around the central axis J1, extending from a lower
end portion of the sidewall 611 outward in the radial direction.
The upper surface part 612 and the lower surface part 613 are
substantially perpendicular to the central axis J1. In the state of
FIG. 1, almost the whole of the sidewall 611 and the lower surface
part 613 in the cup part 161 are positioned inside the liquid
receiving recessed portion 165.
[0047] On a lower surface of an outer edge portion of the chamber
cover 122, provided are lip seals 231 and 232 each having an
annular shape. The lip seal 231 is positioned above an upper end
portion of the chamber sidewall 214. The lip seal 232 is positioned
above an inner edge portion of the upper surface part 612 of the
cup part 161. When the chamber cover 122 shown in FIG. 1 moves down
and the cup part 161 moves up, as shown in FIG. 3, the lip seal 232
comes into contact with the inner edge portion of the upper surface
part 612 of the cup part 161 in the vertical direction. Further,
when the chamber cover 122 moves down to the chamber sidewall 214,
as shown in FIG. 4, the lip seal 231 comes into contact with the
upper end portion of the chamber sidewall 214 in the vertical
direction.
[0048] As shown in FIG. 1, on a lower surface of an outer edge
portion of the top plate 123, a plurality of first engagement parts
241 are arranged in the circumferential direction, and on an upper
surface of the supporting part base 413, a plurality of second
engagement parts 242 are arranged in the circumferential direction.
It is preferable that these engagement parts should be provided in
three or more pairs, and in the present preferred embodiment, four
pairs are provided. At a lower portion of the first engagement part
241, provided is a recessed portion which is recessed upward. The
second engagement part 242 protrudes upward from the supporting
part base 413.
[0049] When the chamber cover 122 moves down, as shown in FIGS. 3
and 4, the second engagement part 242 engages with the recessed
portion of the first engagement part 241. The top plate 123 thereby
engages with the supporting part base 413 of the substrate
supporting part 141 in the circumferential direction around the
central axis J1. In other words, the first engagement part 241 and
the second engagement part 242 serve as a position regulating
member for regulating a relative position of the top plate 123 with
respect to the substrate supporting part 141 in a rotation
direction (for fixing the relative position in the circumferential
direction). When the chamber cover 122 moves down, the substrate
rotating mechanism 15 controls a rotation position of the
supporting part base 413 so that the first engagement part 241 may
engage with the second engagement part 242. Further, in the states
of FIGS. 3 and 4, the plate holding part 222 releases holding of
the top plate 123.
[0050] As described earlier, on the upper surface of the supporting
part base 413 shown in FIG. 1, the plurality of first contact parts
411 of the substrate supporting part 141 are arranged in the
circumferential direction. The plurality of first contact parts 411
are disposed inner than the plurality of second engagement parts
242 in the radial direction. Further, on the lower surface of the
outer edge portion of the top plate 123, the plurality of second
contact parts 421 of the substrate retaining part 142 are arranged
in the circumferential direction. The second contact parts 421 are
disposed inner than the plurality of first engagement parts 241 in
the radial direction. As described above, the positions of the
plurality of second contact parts 421 in the circumferential
direction are different from those of the plurality of first
contact parts 411 in the circumferential direction. In the present
preferred embodiment, four first contact parts 411 are arranged at
regular angular intervals in the circumferential direction.
Further, in the circumferential direction, two second contact parts
421 are disposed adjacently on both sides of each first contact
part 411, and assuming that the two second contact parts 421
adjacent to one first contact part 411 are regarded as one pair,
four pairs of second contact parts 421 are disposed at regular
angular intervals in the circumferential direction. As shown in
FIGS. 3 and 4, in the state where the chamber cover 122 is
positioned down, the plurality of second contact parts 421 of the
substrate retaining part 142 are in contact with the outer edge
portion of the substrate 9.
[0051] On the lower surface of the top plate 123 and on the
supporting part base 413 of the substrate supporting part 141,
provided are a plurality of pairs of magnets (not shown) in each of
which two magnets face each other in the vertical direction.
Hereinafter, each pair of magnets is referred to also as "a magnet
pair". In the substrate processing apparatus 1, a plurality of
magnet pairs are disposed at regular angular intervals at positions
different from those of the first contact parts 411, the second
contact parts 421, the first engagement parts 241, and the second
engagement parts 242 in the circumferential direction. In a state
where the substrate retaining part 142 is in contact with the
substrate 9, with a magnetic force (attractive force) exerted
between each magnet pair, a downward force is exerted on the top
plate 123. The substrate retaining part 142 thereby presses the
substrate 9 toward the substrate supporting part 141.
[0052] In the substrate processing apparatus 1, the substrate
retaining part 142 presses the substrate 9 toward the substrate
supporting part 141 with the weight of the top plate 123 and the
magnetic forces of the magnet pairs, and it is thereby possible to
strongly hold the substrate 9 being sandwiched from above and below
by the substrate retaining part 142 and the substrate supporting
part 141. In the states shown in FIGS. 3 and 4, the plate holding
part 222 is out of contact with the held part 237, and the top
plate 123, being independent from the chamber cover 122, is rotated
by the substrate rotating mechanism 15, together with the substrate
holding part 14 and the substrate 9 held by the substrate holding
part 14.
[0053] FIG. 5 is a view showing an arrangement of the plurality of
gas ejection nozzles 180 in the lower surface facing part 211 of
the chamber bottom 210. In FIG. 5, an attachment position of each
gas ejection nozzle 180 in the lower surface facing part 211 is
represented by a solid-line circle with reference number "1801"
(the same applies to FIGS. 8 and 9).
[0054] As shown in FIG. 5, four gas ejection nozzles 180 are
provided in the lower surface facing part 211. In more detail, the
four gas ejection nozzles 180 are disposed at regular angular
intervals (at intervals of 90 degrees in FIG. 5) in the
circumferential direction around the central axis J1. Assuming that
two gas ejection nozzles 180 which face each other with the central
axis J1 interposed therebetween, i.e., two gas ejection nozzles 180
which are disposed at intervals of 180 degrees in the
circumferential direction are referred to as a "nozzle pair", in
FIG. 5, two nozzle pairs are provided. In each nozzle pair, a
distance between an ejection port of one gas ejection nozzle and
the central axis J1 (hereinafter, referred to as an "ejection
port-central axis distance") and that between an ejection port of
the other gas ejection nozzle and the central axis J1 are equal to
each other. Further, an ejection port-central axis distance of one
nozzle pair is different from that of the other nozzle pair. For
example, in the substrate processing apparatus 1 used for
processing a substrate 9 having a radius of about 150 mm, an
ejection port-central axis distance of one nozzle pair is 110 mm
and that of the other nozzle pair is 145 mm.
[0055] As described earlier, when the substrate 9 is supported by
the substrate supporting part 141 shown in FIG. 1, the facing
surface 211a of the lower surface facing part 211 faces the lower
surface 92 of the substrate 9. The facing surface 211a is a sloped
surface which goes downward as a distance from the central axis J1
becomes larger, extending almost entirely over the lower surface 92
of the substrate 9. A distance between the facing surface 211a and
the lower surface 92 of the substrate 9 becomes minimum near the
lower nozzle 182, e.g., 5 mm. Further, the distance becomes maximum
at the outer edge portion of the substrate 9, e.g., 30 mm. The
plurality of gas ejection nozzles 180 protrude from the facing
surface 211a and the respective ejection ports 1802 are positioned
upper than the facing surface 211a.
[0056] The gas ejection nozzles 180 of the nozzle pair disposed
left and right of the central axis J1 in FIG. 5 (i.e., the gas
ejection nozzles 180 to which the arrows 1803 are not given) are
each fixed to the lower surface facing part 211 so that its central
axis may extend almost along the normal of the facing surface 211a
at the attachment position 1801. Therefore, these gas ejection
nozzles 180 are each inclined with respect to the central axis J1
so that the ejection port 1802 may be positioned slightly outer
than the attachment position 1801. Further, the gas ejection
nozzles 180 of the nozzle pair disposed upper and lower than the
central axis J1 in FIG. 5 are each fixed to the lower surface
facing part 211, being inclined so that the ejection port 1802
thereof may be positioned outer than the normal of the facing
surface 211a at the attachment position 1801 (on the opposite side
of the central axis J1) (see the arrow 1803). Thus, any gas
ejection nozzle 180 in the substrate processing apparatus 1 is
inclined with respect to the central axis J1 with the ejection port
1802 thereof directed upper and slightly outward.
[0057] As shown in FIG. 1, the ejection port 1802 of the gas
ejection nozzle 180 is close to the lower surface 92 of the
substrate 9. From the viewpoint of effective heating of the
substrate 9, a distance between an upper end of the gas ejection
nozzle 180 and the lower surface 92 of the substrate 9 in a
direction of the central axis J1 is preferably not larger than 8
mm, and more preferably not larger than 5 mm (the same applies to
the gas ejection nozzles 180 of FIGS. 8 and 9 described later).
Further, in order to avoid any contact between the gas ejection
nozzle 180 and the lower surface 92 of the substrate 9, the
distance between the upper end of the gas ejection nozzle 180 and
the lower surface 92 of the substrate 9 is preferably not smaller
than 2 mm.
[0058] FIG. 6 is a flowchart showing an operation flow for
processing the substrate 9 in the substrate processing apparatus 1.
In the substrate processing apparatus 1, first, in a state where
the chamber cover 122 is positioned upper as shown in FIG. 1, the
substrate 9 is loaded into the internal space of the chamber 12 by
an external transfer mechanism and supported by the substrate
supporting part 141 from below (Step S11). Subsequently, when the
chamber cover 122 moves down to the position shown in FIG. 3, the
substrate 9 is held by the substrate retaining part 142 and the
substrate supporting part 141. At that time, the chamber cover 122
and the chamber sidewall 214 are separated from each other, and an
annular opening 81 is formed between the chamber cover 122 and the
chamber sidewall 214 around the substrate 9 (in other words, outer
than the substrate 9 in the radial direction). Hereinafter, a state
of the chamber 12 where the annular opening 81 is formed is
referred to as a "semiopen state". Further, the state of FIG. 1 is
referred to as an "open state".
[0059] The cup part 161 moves upward from the position shown in
FIG. 1, to be positioned outer than the annular opening 81 in the
radial direction all around the circumference, as shown in FIG. 3.
Thus, the cup moving mechanism 162 (see FIG. 1) moves the cup part
161 between a first position which is outer than the annular
opening 81 in the radial direction and a second position below the
first position (see FIG. 1) in the vertical direction. In the cup
part 161 positioned at the first position, the sidewall 611 faces
the annular opening 81 in the radial direction.
[0060] In the cup part 161 positioned at the first position, an
upper surface of the inner edge portion of the upper surface part
612 is in contact with the lip seal 232 of the chamber cover 122
all around the circumference. With this contact, between the
chamber cover 122 and the upper surface part 612 of the cup part
161, formed is a first seal 615 for preventing the passage of gas
and/or liquid. Further, an upper surface of the lower surface part
613 of the cup part 161 is in contact with a lower surface of the
outer seal part 169 of the chamber body 121 all around the
circumference. With this contact, between the chamber body 121 and
the lower surface part 613 of the cup part 161, formed is a second
seal 616 for preventing the passage of gas and/or liquid.
[0061] In the substrate processing apparatus 1, the upper surface
part 612 of the cup part 161 serves as a first seal part which
forms the first seal 615 at the first position, and the lower
surface part 613 thereof serves as a second seal part which forms
the second seal 616 at the first position. Then, the chamber 12 in
the semiopen state (in other words, the chamber body 121 and the
chamber cover 122 in the state where the annular opening 81 is
formed) and the cup part 161 positioned at the first position form
a sealed internal space 160 (hereinafter, referred to as a "sealed
space 160"). Thus, in the substrate processing apparatus 1, a
sealed space forming part which forms the sealed space 160 is
achieved by the chamber 12 and the cup part 161.
[0062] After the sealed space 160 is formed, rotation of the
substrate 9 is started by the substrate rotating mechanism 15 at a
constant number of rotation (relatively low number of rotation
(rotation speed), and hereinafter, referred to as "the steady
number of rotation"). Further, the supply of the inert gas (herein,
nitrogen gas) from the inert gas supply part 186 (see FIG. 2) into
the sealed space 160 is started, and the exhaust of gas from the
sealed space 160 by the outer gas exhaust part 194 is also started.
After a predetermined time elapses, the sealed space 160 is thereby
brought into an inert gas filled state where the inert gas is
filled therein (in other words, into a low oxygen atmosphere where
the oxygen concentration is low). Further, the supply of the inert
gas into the sealed space 160 and the exhaust of the gas from the
sealed space 160 may be performed in the open state shown in FIG.
1.
[0063] Subsequently, the supply of the chemical liquid onto the
upper surface 91 of the substrate 9 is started by the chemical
liquid supply part 183 (Step S12). As shown in FIG. 3, the chemical
liquid from the chemical liquid supply part 183 is gently and
continuously supplied onto the center portion of the upper surface
91 of the substrate 9 from the upper nozzle 181 through the opening
of the center portion of the top plate 123. With the rotation of
the substrate 9, the chemical liquid spreads toward the outer
peripheral portion and the entire upper surface 91 is thereby
covered with the chemical liquid.
[0064] At that time, heated gas is ejected from the plurality of
gas ejection nozzles 180 toward the lower surface 92 of the
substrate 9. While the vicinity of a radius position of the
substrate 9 corresponding to the ejection port-central axis
distance of each nozzle pair is thereby uniformly heated all around
the circumference, etching is performed on the upper surface 91 by
using the chemical liquid. In an actual case, since the lower
surface of the top plate 123 is close to the upper surface 91 of
the substrate 9, the etching of the substrate 9 is performed in a
very narrow space between the lower surface of the top plate 123
and the upper surface 91.
[0065] In the sealed space 160, the chemical liquid scattered from
the upper surface 91 of the substrate 9 is received by the cup part
161 through the annular opening 81 and flows into the gas-liquid
separating part 193 through the first exhaust path 191 shown in
FIG. 2. In the chemical liquid collecting part 195, the chemical
liquid is collected from the gas-liquid separating part 193, and
after removing impurities or the like from the chemical liquid
through a filter or the like, the chemical liquid is reused.
[0066] After a predetermined time (e.g., 60 to 120 seconds) elapses
from the start of the supply of the chemical liquid, the supply of
the chemical liquid from the chemical liquid supply part 183 and
the supply of the heated gas from the heated gas supply part 187
are stopped. Subsequently, the substrate rotating mechanism 15
increases the number of rotation of the substrate 9 to be higher
than the steady number of rotation for a predetermined time period
(e.g., 1 to 3 seconds), to thereby remove the chemical liquid from
the substrate 9. At that time, since the top plate 123 is rotated
together with the substrate supporting part 141, almost no chemical
liquid remains on the lower surface of the top plate 123 and
therefore, the chemical liquid never drops from the top plate
123.
[0067] After the number of rotation of the substrate 9 is decreased
to the steady number of rotation, as shown in FIG. 4, the chamber
cover 122 and the cup part 161 move down. Then, the lip seal 231 of
the chamber cover 122 comes into contact with the upper portion of
the chamber sidewall 214, and the chamber 12 thereby forms a sealed
internal space 120 (hereinafter, referred to as a "sealed space
120") therein. In a state where the chamber 12 is sealed, the
substrate 9 directly faces an inner wall of the chamber 12 and
there exists no other liquid receiving part therebetween. After
that, the exhaust of the gas by the outer gas exhaust part 194 is
stopped and the exhaust of gas from the sealed space 120 by the
inner gas exhaust part 198 is started. Then, the supply of the
deionized water serving as a rinse liquid or a cleaning solution
onto the substrate 9 is started by the deionized water supply part
184 (Step S13).
[0068] The deionized water (pure water) from the deionized water
supply part 184 is ejected from the upper nozzle 181 and the lower
nozzle 182 and continuously supplied onto the respective center
portions of the upper surface 91 and the lower surface 92 of the
substrate 9. With the rotation of the substrate 9, the deionized
water spreads toward the respective outer peripheral portions of
the upper surface 91 and the lower surface 92 and is scattered
outward from an outer peripheral edge of the substrate 9. The
deionized water scattered from the substrate 9 is received by the
inner wall of the chamber 12 (i.e., the respective inner walls of
the chamber cover 122 and the chamber sidewall 214) and discarded
through the second exhaust path 192, the gas-liquid separating part
197, and the liquid exhaust part 199 shown in FIG. 2 (the same
applies to drying of the substrate 9 described later). With this
operation, as well as a rinse process of the upper surface 91 of
the substrate 9 and a cleaning process of the lower surface 92
thereof, cleaning of the inside of the chamber 12 is substantially
performed.
[0069] After a predetermined time elapses from the start of supply
of the deionized water, the supply of the deionized water from the
deionized water supply part 184 is stopped. Then, in the sealed
space 120, the number of rotation of the substrate 9 is increased
to be sufficiently higher than the steady number of rotation. The
deionized water is thereby removed from the substrate 9, and drying
of the substrate 9 is performed (Step 14). After a predetermined
time elapses from the start of drying of the substrate 9, the
rotation of the substrate 9 is stopped.
[0070] After that, the chamber cover 122 and the top plate 123 move
up, and the chamber 12 is brought into the open state as shown in
FIG. 1. In Step S14, since the top plate 123 is rotated together
with the substrate supporting part 141, almost no liquid remains on
the lower surface of the top plate 123 and therefore, no liquid
drops from the top plate 123 onto the substrate 9 when the chamber
cover 122 moves up. The substrate 9 is unloaded from the internal
space of the chamber 12 by the external transfer mechanism (Step
S15). Further, after the deionized water supply part 184 supplies
the deionized water and before the substrate 9 is dried, the IPA
supply part 185 may supply the IPA onto the substrate 9, to thereby
replace the deionized water with the IPA on the substrate 9.
[0071] As described above, in the substrate processing apparatus 1,
the outer edge portion of the substrate 9 in the horizontal state
is supported from below by the substrate supporting part 141 which
is an annular supporting part, and the lower surface facing part
211 having the facing surface 211a which faces the lower surface 92
of the substrate 9 is provided on the inner side of the substrate
supporting part 141. Then, the gas ejection nozzles 180 for
ejecting heated gas toward the lower surface 92 of the substrate 9
is provided on the lower surface facing part 211.
[0072] Herein, explanation will be made on a difference in the
uniformity of the processing of the substrate 9 due to whether or
not the lower surface 92 of the substrate 9 is heated by the gas
ejection nozzles 180. FIG. 7 is a graph showing an experimental
result on etching. In FIG. 7, the horizontal axis represents a
position on the substrate 9 in the radial direction and the
vertical axis represents an etching amount. Further, in FIG. 7, the
etching amount at each position in a case where the lower surface
92 of the substrate 9 is not heated (this case may be thought as a
case where the gas ejection nozzles 180 are omitted) is indicated
by the broken line L1, and the etching amount at each position in a
case where the lower surface 92 of the substrate 9 is heated is
indicated by the one-dot chain line L2. Further, the solid line L3
indicates a change in the etching amount in an exemplary case of
FIG. 8 described later.
[0073] As shown in FIG. 7, in the case where the lower surface 92
is not heated, the etching amount becomes low at the outer edge
portions of the substrate 9. On the other hand, in the case where
the lower surface 92 is heated, the decrease in the etching amount
at the outer edge portions of the substrate 9 is suppressed. When a
value indicating the uniformity is obtained by ((A-B)/2C*100) by
using a maximum value A, a minimum value B, and an average value C
of the etching amount at a plurality of positions on the substrate
9, the uniformity of etching in the case where the lower surface 92
is not heated is 7%. On the other hand, the uniformity of etching
in the case where the lower surface 92 is heated is 3%, and the
uniformity is improved in this case.
[0074] Thus, in the substrate processing apparatus 1, when the
upper surface 91 of the substrate 9 is processed with a processing
liquid ejected from the upper nozzle 181, by heating the substrate
9 with heated gas ejected from the gas ejection nozzles 180
(preferably, by heating a portion away from the central axis J1,
where the temperature is relatively low), it is possible to improve
the uniformity of a temperature distribution of the substrate 9. As
a result, it is possible to improve the uniformity of the
processing on the upper surface 91 of the substrate 9 with a
processing liquid from the upper nozzle 181.
[0075] Further, by providing the lower nozzle 182 for ejecting the
deionized water as a processing liquid on the lower surface facing
part 211 as a processing liquid nozzle, it is possible to perform
the processing of the lower surface 92 of the substrate 9 with this
processing liquid. Furthermore, since the gas ejection nozzles 180
protrude from the facing surface 211a of the lower surface facing
part 211, it is possible to suppress the flow of the processing
liquid into the gas ejection nozzles 180 through the ejection ports
1802 during the processing of the lower surface 92 of the substrate
9.
[0076] In the substrate processing apparatus 1, since the gas
ejection nozzles 180 are inclined with respect to the central axis
J1, it is possible to further suppress the flow of the processing
liquid into the gas ejection nozzles 180. Further, since the
distance between the gas ejection nozzle 180 and the lower surface
92 of the substrate 9 is not larger than 8 mm in the direction of
the central axis J1, it is possible to efficiently heat the
substrate 9. Furthermore, since the distance between the ejection
port 1802 of one gas ejection nozzle 180 out of the plurality of
gas ejection nozzles 180 and the central axis J1 is different from
that between the ejection port 1802 of another gas ejection nozzle
180 and the central axis J1, it is possible to heat a wide range of
the substrate 9.
[0077] Since the facing surface 211a is a sloped surface which gets
farther away from the substrate 9 as a distance from the central
axis J1 becomes larger, it is possible to easily guide the
processing liquid used for the processing of the lower surface 92
of the substrate 9 toward the outer side of the facing surface
211a. As a result, it is also possible to prevent the processing
liquid from being accumulated on the facing surface 211a. Further,
depending on the design of the substrate processing apparatus 1,
the facing surface 211a may be a surface in parallel with the lower
surface 92 of the substrate 9.
[0078] Assuming that a substrate processing apparatus in which a
substrate is processed in an open processing space is considered as
a comparative example, in the comparative example of substrate
processing apparatus, in order to prevent gas containing a chemical
liquid component from being diffused outside, the gas in the
processing space is exhausted in a large flow during the processing
of the substrate with the processing liquid. Further, in order to
prevent deposition of particles on the substrate, a downflow is
sometimes formed. Therefore, an airflow from upper toward lower is
formed around the substrate, and a temperature of the substrate
becomes easy to decrease due to the airflow. The decrease in the
temperature of the substrate becomes more remarkable at an outer
edge portion of the substrate, and the uniformity of the
temperature distribution of the substrate is deteriorated. As a
result, the uniformity of the processing of the substrate by using
the chemical liquid is deteriorated (in other words, the percent
value indicating the uniformity increases). Though it may be
possible to suppress deterioration in the uniformity of the
temperature distribution of the substrate by supplying the chemical
liquid which is heated to a certain temperature onto the substrate
in a large flow, the amount of chemical liquid consumed
disadvantageously increases.
[0079] On the other hand, in the substrate processing apparatus 1,
since the sealed space 160 which is smaller than the processing
space in the comparative example of substrate processing apparatus
is formed by the chamber 12 and the cup part 161 which serve as the
sealed space forming part, it is possible to suppress diffusion of
heat from the substrate 9. In an actual case, when the chemical
liquid is supplied onto the substrate 9 by the chemical liquid
supply part 183, the top plate 123 becomes close to the upper
surface 91 of the substrate 9. The lower surface facing part 211 is
close to the lower surface 92 of the substrate 9. It is thereby
possible to further suppress the diffusion of heat from the
substrate 9.
[0080] In the substrate processing apparatus 1 in which the sealed
space 160 is formed, since no gas containing a chemical liquid
component diffuses outside and there is low necessity of the
downflow which is formed in order to prevent deposition of
particles on the substrate, it is possible to set the amount of gas
flowing into the sealed space 160 and the amount of gas flowing out
of the sealed space 160 low. Therefore, it is possible to further
reduce the decrease in the temperature of the substrate 9. As a
result, it is possible to improve the uniformity of the temperature
distribution of the substrate while setting the flow rate of heated
gas from the gas ejection nozzles 180 relatively low. Further,
since it is not necessary to supply the chemical liquid which is
heated to a certain temperature onto the substrate 9 in a large
flow (in other words, it is possible to reduce the amount of
chemical liquid consumed), it is possible to also reduce the COO
(Cost Of Ownership) of the substrate processing apparatus 1.
[0081] In the substrate processing apparatus 1, in the processing
using the chemical liquid, the sealed space 160 is brought into an
inert gas filled state (i.e., a low oxygen atmosphere) and further,
the heated inert gas is ejected from the gas ejection nozzles 180.
It thereby becomes possible to use not only an inorganic chemical
liquid but also a flammable organic chemical liquid or the like,
and the explosion-proof countermeasure becomes easy.
[0082] FIG. 8 is a view showing another exemplary arrangement of
the plurality of gas ejection nozzles 180 in the lower surface
facing part 211. On the lower surface facing part 211 shown in FIG.
8, provided are six gas ejection nozzles 180 each protruding from
the facing surface 211a. In more detail, four gas ejection nozzles
180 among the six gas ejection nozzles 180 are arranged in the same
manner as the four gas ejection nozzles 180 shown in FIG. 5 are
arranged. The other two gas ejection nozzles 180 are arranged near
the central axis J1 at intervals of 180 degrees in the
circumferential direction. Thus, in FIG. 8, three nozzle pairs are
provided, and the respective ejection port-central axis distances
of the three nozzle pairs are different from one another. In the
substrate processing apparatus 1 used for processing the substrate
9 having a radius of about 150 mm, for example, the ejection
port-central axis distance of one nozzle pair is 110 mm, the
ejection port-central axis distance of another nozzle pair is 145
mm, and the ejection port-central axis distance of the other nozzle
pair is smaller than 110 mm.
[0083] The facing surface 211a is a sloped surface which goes
downward as a distance from the central axis J1 becomes larger and
all the gas ejection nozzles 180 are each inclined with respect to
the central axis J1 (the same applies to still another example of
FIG. 9 described later). As indicated by the solid line L3 in FIG.
7, in the exemplary arrangement of FIG. 8 as compared with the
exemplary arrangement of FIG. 5, the decrease in the etching amount
at the outer edge portions of the substrate 9 is further
suppressed, and the uniformity of the etching process is 1%.
[0084] FIG. 9 is a view showing still another exemplary arrangement
of the plurality of gas ejection nozzles 180 in the lower surface
facing part 211. In FIG. 9, three nozzle pairs are provided, and
the respective ejection port-central axis distances of the three
nozzle pairs are different from one another. In the substrate
processing apparatus 1 used for processing the substrate 9 having a
radius of about 150 mm, for example, the ejection port-central axis
distance of one nozzle pair is 65 mm, the ejection port-central
axis distance of another nozzle pair is 90 mm, and the ejection
port-central axis distance of the other nozzle pair is 145 mm.
[0085] In an actual case, the gas ejection nozzles 180 of the
nozzle pair having the minimum ejection port-central axis distance
are each fixed to the lower surface facing part 211, being inclined
so that the ejection port 1802 thereof may be positioned inner than
the attachment position 1801 (see the arrow 1803). In the gas
ejection nozzle 180, the ejection port 1802 thereof is directed
upper and slightly inward. The other gas ejection nozzles 180 are
each fixed to the lower surface facing part 211 almost along the
normal of the facing surface 211a which is a sloped surface. Also
in the exemplary arrangement of FIG. 9, the uniformity of the
processing on the upper surface 91 of the substrate 9 can be
improved.
[0086] The above-described substrate processing apparatus 1 allows
various variations. Assuming that the processing liquid supplied
onto the upper surface 91 of the substrate 9 is a first processing
liquid, though the chemical liquid is supplied onto the upper
surface 91 as the first processing liquid from the chemical liquid
supply part 183 which is a first processing liquid supply part in
the above-described substrate processing apparatus 1, the first
processing liquid may be a processing liquid other than the
chemical liquid. Similarly, assuming that the processing liquid
supplied onto the lower surface 92 of the substrate 9 is a second
processing liquid, though the deionized water is supplied onto the
lower surface 92 as the second processing liquid from the deionized
water supply part 184 which is a second processing liquid supply
part in the above-described substrate processing apparatus 1, the
second processing liquid may be any other processing liquid.
[0087] In the substrate processing apparatus 1 of FIG. 1, though
the sealed space 160 is formed by the chamber 12 and the cup part
161 when the chemical liquid is supplied and the sealed space 120
is formed only by the chamber 12 when the deionized water is
supplied, depending on the design of the substrate processing
apparatus, the cup part 161 may be omitted and a sealed internal
space may be formed only by the chamber 12 both when the chemical
liquid is supplied and when the deionized water is supplied. Thus,
the sealed space forming part which forms the sealed internal space
in which the processing of the substrate 9 is performed by using
the first processing liquid and the second processing liquid can be
achieved in various manners.
[0088] In the substrate processing apparatus 1 of FIG. 1, the
chamber cover 122 may be omitted, and the substrate 9 may be
processed in an open processing space. Further, the annular
supporting part which supports the outer edge portion of the
substrate 9 in the horizontal state from below can be achieved in
various manners. In the case where the chamber cover 122 is omitted
as mentioned above, for example, a mechanism for gripping the
substrate 9 is provided in the substrate supporting part 141.
[0089] In the above-described substrate processing apparatus 1, the
substrate rotating mechanism which rotates the substrate supporting
part 141 having an annular shape around the central axis J1
together with the substrate 9 around the central axis J1 may be
achieved by a constitution (for example, a combination of an
annular gear provided on the annular substrate supporting part 141
and a motor which engages with the gear to rotate the gear) other
than the hollow motor having the annular stator part 151 and the
annular rotor part 152. Further, depending on the design of the
substrate processing apparatus 1, a rotating mechanism may rotate
the lower surface facing part 211 with respect to the substrate 9.
In other words, in the substrate processing apparatus 1, provided
is a rotating mechanism for relatively rotating the substrate
supporting part 141 together with the substrate 9 around the
central axis J1 with respect to the lower surface facing part
211.
[0090] Furthermore, only one gas ejection nozzle 180 may be
provided in the lower surface facing part 211. In other words, in
the substrate processing apparatus 1, by providing at least one gas
ejection nozzle 180 in the lower surface facing part 211, it
becomes possible to heat the lower surface 92 of the substrate
9.
[0091] The substrate to be processed in the substrate processing
apparatus is not limited to a semiconductor substrate, but may be a
glass substrate or other substrates.
[0092] FIG. 10 is a cross-sectional view showing a substrate
processing apparatus 1a in accordance with the second preferred
embodiment of the present invention. The substrate processing
apparatus 1a is a single-substrate processing apparatus for
supplying a processing liquid to a semiconductor substrate 9
(hereinafter, referred to simply as a "substrate 9") having a
substantially disk-like shape, to thereby process substrates 9 one
by one. In FIG. 10, hatching of the cross sections of some
constituent elements in the substrate processing apparatus 1a is
omitted (the same applies to other cross-sectional views).
[0093] The substrate processing apparatus 1a includes the chamber
12, the top plate 123, the chamber opening and closing mechanism
131, the substrate holding part 14, the substrate rotating
mechanism 15, the liquid receiving part 16, and the cover 17.
[0094] The chamber 12 includes the chamber body 121 and the chamber
cover 122. The chamber body 121 and the chamber cover 122 are each
formed of a non-magnetic material. The chamber body 121 includes
the chamber bottom 210 and the chamber sidewall 214. The chamber
bottom 210 includes the center portion 211 having a substantially
disk-like shape, the inner sidewall 212 having a cylindrical shape
extending downward from an outer edge portion of the center portion
211, and the base part 213 extending from the inner sidewall 212
outward in the radial direction. The chamber sidewall 214 has an
annular shape around the central axis J1 directed in the vertical
direction, protruding upward from a middle portion of the base part
213 in the radial direction. A member forming the chamber sidewall
214 also serves as part of the liquid receiving part 16, as
described later. In the following description, a space surrounded
by the chamber sidewall 214, the inner sidewall 212, and the base
part 213 is referred to as the lower annular space 217. When the
substrate 9 is supported by the substrate supporting part 141
(described later) of the substrate holding part 14, the lower
surface 92 of the substrate 9 faces the upper surface 211a of the
center portion 211.
[0095] The chamber cover 122 has a substantially disk-like shape
perpendicular to the central axis J1, including the upper portion
of the chamber 12. The chamber cover 122 closes the upper opening
of the chamber body 121. FIG. 10 shows a state where the chamber
cover 122 is separated from the chamber body 121. When the chamber
cover 122 closes the upper opening of the chamber body 121, the
outer edge portion of the chamber cover 122 comes into contact with
the upper portion of the chamber sidewall 214.
[0096] The chamber opening and closing mechanism 131 moves the
chamber cover 122 which is a movable part of the chamber 12
relatively to the chamber body 121 which is the other portion of
the chamber 12 in the vertical direction. The chamber opening and
closing mechanism 131 serves as the cover up-and-down moving
mechanism for moving the chamber cover 122 up and down. When the
chamber opening and closing mechanism 131 moves the chamber cover
122 in the vertical direction, the top plate 123 is also moved,
together with the chamber cover 122, in a certain range in the
vertical direction. When the chamber cover 122 comes into contact
with the chamber body 121 to close the upper opening thereof and
the chamber cover 122 is pressed toward the chamber body 121, an
internal space (see FIG. 13 described later) which is sealed is
formed inside the chamber 12.
[0097] The substrate holding part 14 is disposed in the chamber 12
and holds the substrate 9 in the horizontal state. In other words,
the substrate 9 is held by the substrate holding part 14, in a
state where the upper surface 91 thereof is directed upward, being
perpendicular to the central axis J1. The substrate holding part 14
includes the above-described substrate supporting part 141 for
supporting the outer edge portion of the substrate 9 from below and
the substrate retaining part 142 for retaining the outer edge
portion of the substrate 9 from above, which is supported by the
substrate supporting part 141. The substrate supporting part 141
includes the supporting part base 413 having a substantially
annular disk-like shape around the central axis J1 and the
plurality of first contact parts 411 fixed to the upper surface of
the supporting part base 413. The substrate retaining part 142
includes the plurality of second contact parts 421 fixed to the
lower surface of the top plate 123. Positions of the plurality of
second contact parts 421 in the circumferential direction are
actually different from those of the plurality of first contact
parts 411 in the circumferential direction.
[0098] The top plate 123 has a substantially disk-like shape
perpendicular to the central axis J1. The top plate 123 is disposed
below the chamber cover 122 and above the substrate supporting part
141. The top plate 123 has the opening at its center portion. When
the substrate 9 is supported by the substrate supporting part 141,
the upper surface 91 of the substrate 9 faces the lower surface of
the top plate 123 which is perpendicular to the central axis J1. A
diameter of the top plate 123 is larger than that of the substrate
9, and the outer edge portion of the top plate 123 is positioned
outer than the outer edge portion of the substrate 9 in the radial
direction all around the circumference. Thus, the top plate 123
extends along the upper surface 91 so as to cover the substrate 9
above the substrate 9.
[0099] In the state of FIG. 10, the top plate 123 is supported by
the chamber cover 122. In more detail, on the lower surface of the
chamber cover 122, the plate holding part 222 having an annular
shape is provided. The plate holding part 222 includes the
cylindrical portion 223 having a substantially cylindrical shape
around the central axis J1 and the flange portion 224 having a
substantially annular shape around the central axis J1. The
cylindrical portion 223 extends downward from the lower surface of
the chamber cover 122. The flange portion 224 extends from the
lower end of the cylindrical portion 223 outward in the radial
direction.
[0100] The top plate 123 includes the held part 237 having an
annular shape. The held part 237 includes the cylindrical portion
238 having a substantially cylindrical shape around the central
axis J1 and the flange portion 239 having a substantially annular
shape around the central axis J1. The cylindrical portion 238
extends upward from the upper surface of the top plate 123. The
flange portion 239 extends from the upper end of the cylindrical
portion 238 inward in the radial direction. The cylindrical portion
238 is positioned outer than the cylindrical portion 223 of the
plate holding part 222 in the radial direction and faces the
cylindrical portion 223 in the radial direction. The flange portion
239 is positioned above the flange portion 224 of the plate holding
part 222 and faces the flange portion 224 in the vertical
direction. When the lower surface of the flange portion 239 of the
held part 237 comes into contact with the upper surface of the
flange portion 224 of the plate holding part 222, the top plate 123
is attached to the chamber cover 122, being suspended from the
chamber cover 122.
[0101] The substrate rotating mechanism 15 of FIG. 10 is a
so-called hollow motor. The substrate rotating mechanism 15
includes the stator part 151 having an annular shape around the
central axis J1 and the rotor part 152 having an annular shape. The
rotor part 152 includes a permanent magnet having a substantially
annular shape. A surface of the permanent magnet is molded of a
PTFE (polytetrafluoroethylene) resin. The rotor part 152 is
disposed inside the lower annular space 217 in the internal space
of the chamber 12. Above the rotor part 152, attached is the
supporting part base 413 of the substrate supporting part 141 with
a connecting member interposed therebetween. The supporting part
base 413 is disposed above the rotor part 152.
[0102] The stator part 151 is disposed in the periphery of the
rotor part 152 outside the chamber 12 (in other words, outside the
internal space), i.e., disposed outer in the radial direction. In
the present preferred embodiment, the stator part 151 is fixed to
the base part 213 and positioned below the liquid receiving part
16. The stator part 151 includes a plurality of coils arranged in
the circumferential direction around the central axis J1.
[0103] By supplying current to the stator part 151, a rotating
force is generated around the central axis J1 between the stator
part 151 and the rotor part 152. The rotor part 152 is thereby
rotated in the horizontal state around the central axis J1. With a
magnetic force exerted between the stator part 151 and the rotor
part 152, the rotor part 152 floats in the chamber 12, not being in
direct or indirect contact with the chamber 12, and rotates the
substarate 9, being in a floating state, together with the
substrate supporting part 141 around the central axis J1.
[0104] The liquid receiving part 16 includes the cup part 161 and
the cup moving mechanism 162. As described earlier, part of the
member forming the chamber sidewall 214 is included in the liquid
receiving part 16. The cup part 161 has an annular shape around the
central axis J1 and is positioned outer than the chamber sidewall
214 in the radial direction. The cup moving mechanism 162 moves the
cup part 161 in the vertical direction.
[0105] The lower portion of the cup part 161 is positioned inside
the liquid receiving recessed portion 165 which has an annular
shape and is positioned outer than the chamber sidewall 214. At the
upper end portion of the outer wall 168 having a substantially
cylindrical shape surrounding the outer periphery of the liquid
receiving recessed portion 165, the outer seal part 169 having a
substantially annular disk-like shape around the central axis J1 is
fixed. The outer seal part 169 extends from the upper end portion
of the outer wall 168 inward in the radial direction, to cover the
outer peripheral portion of the upper opening of the liquid
receiving recessed portion 165 all around the circumference.
[0106] The upper nozzle 181 is fixed to the center portion of the
chamber cover 122. The upper nozzle 181 is insertable into the
opening of the center portion of the top plate 123. At the center
of the center portion 211 of the chamber bottom 210, the lower
nozzle 182 is attached. The bottom portion of the liquid receiving
recessed portion 165 is connected to the first exhaust path 191.
The bottom portion of the lower annular space 217 between the inner
sidewall 212 and the chamber sidewall 214 is connected to the
second exhaust path 192. The positions for attachment of the upper
nozzle 181 and the lower nozzle 182 are not necessarily limited to
the center portion, but may be, for example, positions facing the
peripheral portion of the substrate 9.
[0107] FIG. 11 is a block diagram showing a processing liquid
supply part 18a, the inert gas supply part 186 and the gas-liquid
exhaust part 19 included in the substrate processing apparatus 1a.
The processing liquid supply part 18a includes the chemical liquid
supply part 183, the deionized water supply part 184, and the IPA
supply part 185, besides the upper nozzle 181 and the lower nozzle
182 described above. The chemical liquid supply part 183, the
deionized water supply part 184, and the IPA supply part 185 are
each connected to the upper nozzle 181 with a valve interposed
therebetween. The lower nozzle 182 is connected to the deionized
water supply part 184 with a valve interposed therebetween. The
upper nozzle 181 is also connected to the inert gas supply part 186
with a valve interposed therebetween. The upper nozzle 181 has the
liquid ejection port at its center portion and has the gas ejection
port therearound. Therefore, exactly, part of the upper nozzle 181
is part of a gas supply part for supplying gas into the chamber 12
in a broad sense. The lower nozzle 182 has the liquid ejection port
at its center portion.
[0108] The first exhaust path 191 connected to the liquid receiving
recessed portion 165 of the liquid receiving part 16 is connected
to the gas-liquid separating part 193. The gas-liquid separating
part 193 is connected to the outer gas exhaust part 194, the
chemical liquid collecting part 195, and the liquid exhaust part
196 each with a valve interposed therebetween. The second exhaust
path 192 connected to the chamber bottom 210 is connected to the
gas-liquid separating part 197. The gas-liquid separating part 197
is connected to the inner gas exhaust part 198 and the liquid
exhaust part 199 each with a valve interposed therebetween. The
constituent elements in the processing liquid supply part 18a, the
inert gas supply part 186, and the gas-liquid exhaust part 19 are
controlled by the control part 10. The chamber opening and closing
mechanism 131, the substrate holding part 14, the substrate
rotating mechanism 15, and the cup moving mechanism 162 (see FIG.
10) are also controlled by the control part 10.
[0109] In the present preferred embodiment, a chemical liquid
supplied from the chemical liquid supply part 183 onto the
substrate 9 through the upper nozzle 181 is an etching solution
such as hydrofluoric acid, a tetramethylammonium hydroxide
solution, or the like. The deionized water supply part 184 supplies
deionized water (DIW) onto the substrate 9 through the upper nozzle
181 or the lower nozzle 182. The IPA supply part 185 supplies
isopropyl alcohol (IPA) onto the substrate 9 through the upper
nozzle 181. In the substrate processing apparatus 1a, a processing
liquid supply part for supplying any processing liquid other than
the above processing liquids may be provided. Further, the inert
gas supply part 186 supplies an inert gas into the chamber 12
through the upper nozzle 181. In the present preferred embodiment,
the inert gas is nitrogen gas (N.sub.2), but any gas other than
nitrogen gas may be used.
[0110] As shown in FIG. 10, the cup part 161 includes the sidewall
611, the upper surface part 612, and the lower surface part 613.
The sidewall 611 has a substantially cylindrical shape around the
central axis J1. The upper surface part 612 has a substantially
annular disk-like shape around the central axis J1, extending from
the upper end portion of the sidewall 611 inward in the radial
direction. The lower surface part 613 has substantially annular
disk-like shape around the central axis J1, extending from the
lower end portion of the sidewall 611 outward in the radial
direction. The upper surface part 612 and the lower surface part
613 are substantially perpendicular to the central axis J1. In the
state of FIG. 10, almost the whole of the sidewall 611 and the
lower surface part 613 in the cup part 161 are positioned inside
the liquid receiving recessed portion 165.
[0111] On the lower surface of the outer edge portion of the
chamber cover 122, provided are lip seals 231 and 232 each having
an annular shape. The lip seal 231 is positioned above the upper
end portion of the chamber sidewall 214. The lip seal 232 is
positioned above the inner edge portion of the upper surface part
612 of the cup part 161. When the chamber cover 122 shown in FIG.
10 moves down and the cup part 161 moves up, as shown in FIG. 12,
the lip seal 232 comes into contact with the inner edge portion of
the upper surface part 612 of the cup part 161 in the vertical
direction. Further, when the chamber cover 122 moves down to the
chamber sidewall 214, as shown in FIG. 13, the lip seal 231 comes
into contact with the upper end portion of the chamber sidewall 214
in the vertical direction.
[0112] As shown in FIG. 10, on the lower surface of the outer edge
portion of the top plate 123, the plurality of first engagement
parts 241 are arranged in the circumferential direction, and on the
upper surface of the supporting part base 413, the plurality of
second engagement parts 242 are arranged in the circumferential
direction. It is preferable that these engagement parts should be
provided in three or more pairs, and in the present preferred
embodiment, four pairs are provided. At the lower portion of the
first engagement part 241, provided is a recessed portion which is
recessed upward. The second engagement part 242 protrudes upward
from the supporting part base 413.
[0113] When the chamber cover 122 moves down, as shown in FIGS. 12
and 13, the second engagement part 242 engages with the recessed
portion of the first engagement part 241. The top plate 123 thereby
engages with the supporting part base 413 of the substrate
supporting part 141 in the circumferential direction around the
central axis J1. In other words, the first engagement part 241 and
the second engagement part 242 serve as the position regulating
member for regulating a relative position of the top plate 123 with
respect to the substrate supporting part 141 in the rotation
direction (for fixing the relative position in the circumferential
direction). When the chamber cover 122 moves down, the substrate
rotating mechanism 15 controls the rotation position of the
supporting part base 413 so that the first engagement part 241 may
engage with the second engagement part 242. Further, in the states
of FIGS. 12 and 13, the plate holding part 222 releases holding of
the top plate 123.
[0114] As described earlier, on the upper surface of the supporting
part base 413 shown in FIG. 10, the plurality of first contact
parts 411 of the substrate supporting part 141 are arranged in the
circumferential direction. The plurality of first contact parts 411
are disposed inner than the plurality of second engagement parts
242 in the radial direction. Further, on the lower surface of the
outer edge portion of the top plate 123, the plurality of second
contact parts 421 of the substrate retaining part 142 are arranged
in the circumferential direction. The second contact parts 421 are
disposed inner than the plurality of first engagement parts 241 in
the radial direction. As described above, the positions of the
plurality of second contact parts 421 in the circumferential
direction are actually different from those of the plurality of
first contact parts 411 in the circumferential direction. In the
present preferred embodiment, four first contact parts 411 are
arranged at regular angular intervals in the circumferential
direction. Further, in the circumferential direction, two second
contact parts 421 are disposed adjacently on both sides of each
first contact part 411, and assuming that the two second contact
parts 421 adjacent to one first contact part 411 are regarded as
one pair, four pairs of second contact parts 421 are disposed at
regular angular intervals in the circumferential direction. As
shown in FIGS. 12 and 13, in the state where the chamber cover 122
is positioned down, the plurality of second contact parts 421 of
the substrate retaining part 142 are in contact with the outer edge
portion of the substrate 9.
[0115] On the lower surface of the top plate 123 and on the
supporting part base 413 of the substrate supporting part 141,
provided are a plurality of pairs of magnets (not shown) in each of
which two magnets face each other in the vertical direction.
Hereinafter, each pair of magnets is referred to also as "a magnet
pair". In the substrate processing apparatus 1a, a plurality of
magnet pairs are disposed at regular angular intervals at positions
different from those of the first contact parts 411, the second
contact parts 421, the first engagement parts 241, and the second
engagement parts 242 in the circumferential direction. In a state
where the substrate retaining part 142 is in contact with the
substrate 9, with a magnetic force (attractive force) exerted
between each magnet pair, a downward force is exerted on the top
plate 123. The substrate retaining part 142 thereby presses the
substrate 9 toward the substrate supporting part 141.
[0116] In the substrate processing apparatus la, the substrate
retaining part 142 presses the substrate 9 toward the substrate
supporting part 141 with the weight of the top plate 123 and the
magnetic forces of the magnet pairs, and it is thereby possible to
strongly hold the substrate 9 being sandwiched from above and below
by the substrate retaining part 142 and the substrate supporting
part 141. In the states shown in FIGS. 12 and 13, the plate holding
part 222 is out of contact with the held part 237, and the top
plate 123, being independent from the chamber cover 122, is rotated
by the substrate rotating mechanism 15, together with the substrate
holding part 14 and the substrate 9 held by the substrate holding
part 14.
[0117] FIG. 14 is a flowchart showing an operation flow for
processing the substrate 9 in the substrate processing apparatus
1a. FIG. 15 is a timing chart showing operation timings of
constituent elements in the substrate processing apparatus 1a under
the control of the control part 10. In FIG. 15, from the top stage
downward, the operation timings of the substrate rotating mechanism
15, the chemical liquid supply part 183, the deionized water supply
part 184, the outer gas exhaust part 194, the inner gas exhaust
part 198, and the inert gas supply part 186 are shown in this
order. The process surrounded by broken line in FIG. 14 is
performed in an exemplary processing described later.
[0118] In the substrate processing apparatus 1a, first, in a state
where the chamber cover 122 is positioned upper as shown in FIG.
10, the substrate 9 is loaded into the internal space of the
chamber 12 by an external transfer mechanism and supported by the
substrate supporting part 141 from below (Step S21). Subsequently,
when the chamber cover 122 moves down to the position shown in FIG.
12, the substrate 9 is held by the substrate retaining part 142 and
the substrate supporting part 141. At that time, the chamber cover
122 and the chamber sidewall 214 are separated from each other, and
the annular opening 81 is formed between the chamber cover 122 and
the chamber sidewall 214 around the substrate 9 (in other words,
outer than the substrate 9 in the radial direction). Hereinafter, a
state of the chamber 12 where the annular opening 81 is formed is
referred to as the "semiopen state". Further, the state of FIG. 10
is referred to as the "open state".
[0119] The cup part 161 moves upward from the position shown in
FIG. 10, to be positioned outer than the annular opening 81 in the
radial direction all around the circumference, as shown in FIG. 12.
Thus, the cup moving mechanism 162 (see FIG. 10) moves the cup part
161 between the first position which is outer than the annular
opening 81 in the radial direction and the second position below
the first position (see FIG. 10) in the vertical direction. In the
cup part 161 positioned at the first position, the sidewall 611
faces the annular opening 81 in the radial direction.
[0120] In the cup part 161 positioned at the first position, the
upper surface of the inner edge portion of the upper surface part
612 is in contact with the lip seal 232 of the chamber cover 122
all around the circumference. With this contact, between the
chamber cover 122 and the upper surface part 612 of the cup part
161, formed is the first seal 615 for preventing the passage of gas
and/or liquid. Further, the upper surface of the lower surface part
613 of the cup part 161 is in contact with the lower surface of the
outer seal part 169 of the chamber body 121 all around the
circumference. With this contact, between the chamber body 121 and
the lower surface part 613 of the cup part 161, formed is the
second seal 616 for preventing the passage of gas and/or
liquid.
[0121] In the substrate processing apparatus 1a, the upper surface
part 612 of the cup part 161 serves as the first seal part which
forms the first seal 615 at the first position, and the lower
surface part 613 thereof serves as the second seal part which forms
the second seal 616 at the first position. Then, the chamber 12 in
the semiopen state (in other words, the chamber body 121 and the
chamber cover 122 in the state where the annular opening 81 is
formed) and the cup part 161 positioned at the first position form
the sealed internal space 160 (hereinafter, referred to as the
"sealed space 160"). Thus, in the substrate processing apparatus
1a, the sealed space forming part which forms the sealed space 160
is achieved, by the chamber 12 and the cup part 161.
[0122] After the sealed space 160 is formed at the time T1 in FIG.
15, rotation of the substrate 9 is started by the substrate
rotating mechanism 15 at a constant number of rotation (relatively
low number of rotation, and hereinafter, referred to as "the steady
number of rotation"). Further, the supply of the inert gas (herein,
nitrogen gas) from the inert gas supply part 186 into the sealed
space 160 is started, and the exhaust of gas from the sealed space
160 by the outer gas exhaust part 194 is also started. The supply
of the inert gas into the sealed space 160 through the upper nozzle
181 and the exhaust of the gas from the sealed space 160 through
the first exhaust path 191 are continued for a certain time period
or more. The sealed space 160 is thereby brought into the inert gas
filled state where the inert gas is filled therein (in other words,
into the low oxygen atmosphere where the oxygen concentration is
low) (Step S22). Further, the supply of the inert gas into the
sealed space 160 and the exhaust of the gas from the sealed space
160 may be performed in the open state shown in FIG. 10.
[0123] As shown in FIG. 15, at the time T2 after a predetermined
time (e.g., 20 seconds) elapses from the formation of the sealed
space 160, the supply of the inert gas into the sealed space 160 by
the inert gas supply part 186 and the exhaust of the gas from the
sealed space 160 by the outer gas exhaust part 194 are stopped.
Further, almost concurrently with these operations (e.g., within
several seconds before or after these operations), the supply of
the chemical liquid onto the upper surface 91 of the substrate 9 is
started by the chemical liquid supply part 183 (Step S23). As shown
in FIG. 12, the chemical liquid from the chemical liquid supply
part 183 is gently and continuously supplied onto the center
portion of the upper surface 91 of the substrate 9 from the upper
nozzle 181 through the opening of the center portion of the top
plate 123. With the rotation of the substrate 9, the chemical
liquid spreads toward the outer peripheral portion and the entire
upper surface 91 is thereby covered with the chemical liquid.
[0124] As described earlier, the supply of the chemical liquid onto
the upper surface 91 of the substrate 9 is performed while the
supply of the inert gas into the sealed space 160 and the exhaust
of the gas from the sealed space 160 are stopped. Therefore,
etching is performed on the upper surface 91 by using the chemical
liquid in the sealed space 160 which is in the inert gas filled
state, with the flow of the gas into/from the sealed space 160
blocked. In an actual case, since the lower surface of the top
plate 123 is close to the upper surface 91 of the substrate 9, the
etching of the substrate 9 is performed in a very narrow space
between the lower surface of the top plate 123 and the upper
surface 91.
[0125] In the sealed space 160, the chemical liquid scattered from
the upper surface 91 of the substrate 9 is received by the cup part
161 through the annular opening 81 and flows into the gas-liquid
separating part 193 through the first exhaust path 191 shown in
FIG. 11. In the chemical liquid collecting part 195, the chemical
liquid is collected from the gas-liquid separating part 193, and
after removing impurities or the like from the chemical liquid
through a filter or the like, the chemical liquid is reused.
[0126] As shown in FIG. 15, at the time T3 after a predetermined
time (e.g., 60 to 120 seconds) elapses from the start of the supply
of the chemical liquid, the supply of the chemical liquid from the
chemical liquid supply part 183 is stopped. Then, the substrate
rotating mechanism 15 increases the number of rotation of the
substrate 9 to be higher than the steady number of rotation for a
predetermined time period (e.g., 1 to 3 seconds) until the time T4,
to thereby remove the chemical liquid from the substrate 9. At that
time, since the top plate 123 is rotated together with the
substrate supporting part 141, almost no chemical liquid remains on
the lower surface of the top plate 123 and therefore, the chemical
liquid never drops from the top plate 123.
[0127] At the time T4, the number of rotation of the substrate 9 is
decreased to the steady number of rotation. Further, as shown in
FIG. 13, the chamber cover 122 and the cup part 161 move down.
Then, the lip seal 231 of the chamber cover 122 comes into contact
with the upper portion of the chamber sidewall 214, and the chamber
12 thereby forms the sealed internal space 120 (hereinafter,
referred to as the "sealed space 120") therein. In a state where
the chamber 12 is sealed, the substrate 9 directly faces the inner
wall of the chamber 12 and there exists no other liquid receiving
part therebetween. Further, the supply of the inert gas into the
sealed space 120 from the inert gas supply part 186 is started
again and the exhaust of the gas from the sealed space 120 by the
inner gas exhaust part 198 is started. Furthermore, the supply of
the deionized water serving as the rinse liquid onto the substrate
9 is started by the deionized water supply part 184 serving as a
rinse liquid supply part (Step S24).
[0128] The deionized water from the deionized water supply part 184
is ejected from the upper nozzle 181 and the lower nozzle 182 and
continuously supplied onto the respective center portions of the
upper surface 91 and the lower surface 92 of the substrate 9. With
the rotation of the substrate 9, the deionized water spreads toward
the respective outer peripheral portions of the upper surface 91
and the lower surface 92 and is scattered outward from the outer
peripheral edge of the substrate 9. The deionized water scattered
from the substrate 9 is received by the inner wall of the chamber
12 (i.e., the respective inner walls of the chamber cover 122 and
the chamber sidewall 214) and discarded through the second exhaust
path 192, the gas-liquid separating part 197, and the liquid
exhaust part 199 shown in FIG. 11 (the same applies to drying of
the substrate 9 described later). With this operation, cleaning of
the inside of the chamber 12 is substantially performed. In an
actual case, after the number of rotation of the substrate 9 is
decreased to the steady number of rotation, the chamber cover 122
and the cup part 161 move to form the sealed space 120 shown in
FIG. 13 and subsequently the supply of the deionized water from the
deionized water supply part 184 is started, and therefore, there is
a slight time lag between these operations, but in FIG. 15, for
convenience of illustration, the time lag is ignored.
[0129] At the time T5 after a predetermined time elapses from the
start of supply of the deionized water, the supply of the deionized
water from the deionized water supply part 184 is stopped. Then, in
the sealed space 120, the number of rotation of the substrate 9 is
increased to be sufficiently higher than the steady number of
rotation. The deionized water is thereby removed from the substrate
9, and drying of the substrate 9 is performed (Step S25). At the
time T6 after a predetermined time elapses from the start of drying
of the substrate 9, the rotation of the substrate 9 is stopped.
[0130] After that, the chamber cover 122 and the top plate 123 move
up, and the chamber 12 is brought into the open state as shown in
FIG. 10. In Step S25, since the top plate 123 is rotated together
with the substrate supporting part 141, almost no liquid remains on
the lower surface of the top plate 123 and therefore, no liquid
drops from the top plate 123 onto the substrate 9 when the chamber
cover 122 moves up. The substrate 9 is unloaded from the internal
space of the chamber 12 by the external transfer mechanism (Step
S26). Further, after the deionized water supply part 184 supplies
the deionized water and before the substrate 9 is dried, the IPA
supply part 185 may supply the IPA onto the substrate 9, to thereby
replace the deionized water with the IPA on the substrate 9.
[0131] Herein, description will be made on a comparative example of
the substrate processing apparatus in which the supply of the inert
gas into the sealed space 160 and the exhaust of the gas from the
sealed space 160 are continued in the processing of the substrate 9
by using the chemical liquid in Step S23. In the substrate
processing apparatus of this comparative example, since the flow of
the gas into/from (into and from) the sealed space 160 continues
when the chemical liquid (water or the like contained therein)
supplied onto the substrate 9 is vaporized, a humidity of the
sealed space 160 is hard to be high. Therefore, the vaporization of
the chemical liquid continuously occurs, and the temperature of the
substrate 9 decreases due to the heat of vaporization. The decrease
in the temperature of the substrate 9 becomes remarkable at the
outer edge portion of the substrate 9, and the uniformity of the
temperature distribution of the substrate is deteriorated. As a
result, the uniformity of the processing of the substrate 9 by
using the chemical liquid is deteriorated.
[0132] Though it may be possible to suppress deterioration in the
uniformity of the temperature distribution of the substrate 9 by
supplying the chemical liquid which is heated to a certain
temperature onto the substrate 9 in a large flow, the amount of
chemical liquid consumed disadvantageously increases. In the
substrate processing apparatus where the substrate is processed in
an open processing space, like in Japanese Patent Application
Laid-Open No. 2002-305177 (Document 2), in order to prevent
diffusion of the gas containing the chemical liquid component to
the outside, it is absolutely necessary to exhaust the gas from the
processing space by an gas exhaust part in the processing of the
substrate by using the chemical liquid. Therefore, like in the
substrate processing apparatus of the above comparative example,
the uniformity of the substrate processing using the chemical
liquid is deteriorated. Actually, in such a substrate processing
apparatus, in order to prevent deposition of particles onto the
substrate, a downflow is also formed, and in this case, the
uniformity of the processing of the substrate by using the chemical
liquid is further deteriorated.
[0133] On the other hand, in the substrate processing apparatus 1a,
the sealed space 160 is formed by the chamber 12 and the cup part
161 serving as the sealed space forming part, and when the chemical
liquid is supplied onto the substrate 9 by the chemical liquid
supply part 183, the supply of the inert gas into the sealed space
160 and the exhaust of the gas from the sealed space 160 are
stopped. Thus, by supplying the chemical liquid onto the substrate
9 in the sealed space 160 in which the inflow and the outflow of
gas are blocked, it is possible to keep a state where the sealed
space 160 is humidified mainly by water contained in the chemical
liquid (as a matter of course, the chemical liquid component may be
contained in the atmosphere inside the sealed space 160). As a
result, it is possible to suppress deterioration in the uniformity
of the temperature distribution of the substrate 9 due to the
vaporization of the chemical liquid, and therefore, it is possible
to perform uniform processing on the upper surface 91 of the
substrate 9 by using the chemical liquid with the amount of
chemical liquid consumption reduced. Further, it is possible to
reduce the COO (Cost Of Ownership) of the substrate processing
apparatus 1a.
[0134] FIG. 16 is a graph showing an experimental result on
etching. In FIG. 16, "exhaust-ON" indicates the uniformity of the
etching in the substrate processing apparatus of the comparative
example and "exhaust-OFF" indicates the uniformity of the etching
in the substrate processing apparatus 1a of FIG. 10. Herein, it is
assumed that a value indicating the uniformity (Etching Unif.) is
obtained by (((A-B)/2C)*100) by using a maximum value A, a minimum
value B, and an average value C of the etching amount at a
plurality of positions on the substrate 9. The uniformity of
etching in the substrate processing apparatus 1a is 3% while the
uniformity of etching in the substrate processing apparatus of the
comparative example is 8%. It can be seen from this experimental
result that the uniformity of etching is improved by supplying the
chemical liquid onto the substrate 9 in the sealed space 160 in
which the inflow and the outflow of gas are blocked.
[0135] In the substrate processing apparatus 1a, the inert gas
supply part 186 supplies the inert gas into the sealed space 160
while the outer gas exhaust part 194 exhausts the gas from the
sealed space 160, to thereby bring the sealed space 160 into the
inert gas filled state. Then, the processing using the chemical
liquid is performed in the inert gas filled state (i.e., a low
oxygen atmosphere). It is thereby possible to prevent deposition of
particles on the substrate 9 and use a combustible chemical liquid
or the like.
[0136] The substrate processing apparatus 1a further includes the
top plate 123 which becomes close to the upper surface 91 when the
chemical liquid supply part 183 supplies the chemical liquid onto
the substrate 9, and the upper nozzle 181 for supplying the
chemical liquid from the chemical liquid supply part 183 to between
the top plate 123 and the upper surface 91. It is thereby possible
to achieve the supply of the chemical liquid onto the upper surface
91 of the substrate 9 with the upper surface 91 facing the narrow
space between the upper surface 91 and the top plate 123. As a
result, it is possible to further suppress the vaporization of the
chemical liquid and perform more uniform processing onto the upper
surface 91 of the substrate 9. Further, since an outer peripheral
edge of the top plate 123 is positioned outer than the outer
peripheral edge of the substrate 9 in the radial direction all
around the circumference, the entire outer peripheral portion of
the upper surface 91 of the substrate 9 is covered with the top
plate 123. As a result, it is possible to suppress deposition of
the processing liquid which is scattered from the outer peripheral
edge of the substrate 9 and bounced off the inner wall of the
chamber 12 and the like. Further, by performing the processing in
the state where the top plate 123 is close to the substrate 9, it
is possible to reduce the amount of chemical liquid needed to cover
the upper surface 91 of the substrate 9 therewith.
[0137] Depending on the design of piping from the inert gas supply
part 186 to the sealed space 160 and piping from the sealed space
160 to the outer gas exhaust part 194, even immediately after the
supply of the inert gas into the sealed space 160 by the inert gas
supply part 186 and the exhaust of the gas from the sealed space
160 by the outer gas exhaust part 194 are stopped, the gas
sometimes flows in the sealed space 160 for a short time. In such a
case, as indicated by the thick broken lines L1 and L2 in FIG. 15,
the supply of the inert gas into the sealed space 160 by the inert
gas supply part 186 and the exhaust of the gas from the sealed
space 160 by the outer gas exhaust part 194 may be stopped before
(e.g., 1 to 3 seconds before) the start of the supply of the
chemical liquid onto the substrate 9 at the time T2. With this
operation, when the supply of the chemical liquid onto the
substrate 9 is started, it is possible to more reliably block the
flow of the gas into/from the sealed space 160. As a result, it is
possible to perform more uniform processing on the upper surface 91
of the substrate 9.
[0138] In a preferable operation example of the substrate
processing apparatus 1a, after the supply of the chemical liquid
onto the substrate 9 in Step S23 of FIG. 14 is finished and before
the supply of the deionized water onto the substrate 9 in Step S24
is started, i.e., between the time T3 and the time T4 in FIG. 15,
as indicated by the thick broken line L3, the outer gas exhaust
part 194 exhausts the gas from the sealed space 160 (Step S23a). It
is thereby possible to suppress any effect on the uniformity of the
processing using the chemical liquid, which is caused by mixture of
the chemical liquid component in the atmosphere into the deionized
water serving as the rinse liquid. In this case, the gas is always
exhausted from the internal space of the chamber 12 by the outer
gas exhaust part 194 or the inner gas exhaust part 198 except when
the chemical liquid is supplied onto the substrate 9.
[0139] The above-described substrate processing apparatus 1a allows
various variations. In the substrate processing apparatus 1a of
FIG. 10, though the sealed space 160 is formed by the chamber 12
and the cup part 161 when the chemical liquid is supplied and the
sealed space 120 is formed only by the chamber 12 when the
deionized water is supplied, depending on the design of the
substrate processing apparatus, the cup part 161 may be omitted and
a sealed internal space may be formed only by the chamber 12 both
when the chemical liquid is supplied and when the deionized water
is supplied. Thus, the sealed space forming part which forms the
sealed internal space can be achieved in various manners.
[0140] The chamber opening and closing mechanism 131 serving as the
sealed space opening and closing mechanism is not necessarily
needed to move the chamber cover 122 in the vertical direction, but
may move the chamber body 121 in the vertical direction with the
chamber cover 122 fixed, to thereby switch the state of the chamber
12 among the open state, the semiopen state, and a sealed state.
Further, in the substrate processing apparatus in which the cup
part 161 is omitted as described above, a loading port may be
provided at a side portion of the chamber serving as the sealed
space forming part. In this case, the sealed space opening and
closing mechanism moves a movable part for closing the loading port
with respect to the other portion, to thereby open and close the
chamber. Thus, in the substrate processing apparatus, in
loading/unloading of the substrate 9, the sealed space opening and
closing mechanism moves the movable part which is a portion of the
sealed space forming part with respect to the other portion, to
thereby open and close the sealed space forming part.
[0141] The substrate holding part 14 is not necessarily needed to
be provided separately as the substrate supporting part 141 and the
substrate retaining part 142. For example, a plurality of holding
structures each having a recessed portion which is recessed outward
in the radial direction may be provided on the supporting part base
413. In this case, when the outer edge portion of the substrate 9
is inserted into the recessed portion of each holding structure,
each holding structure comes into contact with the substrate 9 from
below, side, and above, to thereby hold the substrate 9.
[0142] In the substrate processing apparatus, various processings
other than the above-described processings may be performed by
supplying various processing liquids (e.g., the SPM (sulfuric
acid/hydrogen peroxide mixture) liquid) onto the substrate 9.
Further, after the supply of the chemical liquid onto the substrate
9 is finished, a rinse liquid other than the deionized water may be
supplied onto the upper surface 91 of the substrate 9.
[0143] Though the gas exhaust part is achieved by the outer gas
exhaust part 194 and the inner gas exhaust part 198, to exhaust gas
from the internal space in the sealed space forming part in the
substrate processing apparatus 1a, depending on the design of the
substrate processing apparatus, only one gas exhaust part may be
provided.
[0144] The substrate to be processed in the substrate processing
apparatus is not limited to a semiconductor substrate, but may be a
glass substrate or other substrates.
[0145] The configurations of the above-described preferred
embodiments and variations may be appropriately combined as long as
there are no mutual inconsistencies.
[0146] While the invention has been shown and described in detail,
the foregoing description is in all aspects illustrative and not
restrictive. It is therefore understood that numerous modifications
and variations can be devised without departing from the scope of
the invention. This application claims priority benefit under 35
U.S.C. Section 119 of Japanese Patent Application No. 2013-026224
filed in the Japan Patent Office on Feb. 14, 2013 and Japanese
Patent Application No. 2013-027387 filed in the Japan Patent Office
on Feb. 15, 2013, the entire disclosures of which are incorporated
herein by reference.
REFERENCE SIGNS LIST
[0147] 1, 1a Substrate processing apparatus [0148] 9 Substrate
[0149] 10 Control part [0150] 12 Chamber [0151] 14 Substrate
holding part [0152] 15 Substrate rotating mechanism [0153] 91 Upper
surface [0154] 92 Lower surface [0155] 120, 160 Internal space
[0156] 122 Chamber cover [0157] 123 Top plate [0158] 131 Chamber
opening and closing mechanism [0159] 141 Substrate supporting part
[0160] 161 Cup part [0161] 180 Gas ejection nozzle [0162] 181 Upper
nozzle [0163] 182 Lower nozzle [0164] 183 Chemical liquid supply
part [0165] 184 Deionized water supply part [0166] 186 Inert gas
supply part [0167] 194 Outer gas exhaust part [0168] 198 Inner gas
exhaust part [0169] 211 Lower surface facing part [0170] 211a
Facing surface [0171] 1802 Ejection port [0172] J1 Central axis
[0173] S22 to S24, S23a Step
* * * * *