U.S. patent application number 13/830260 was filed with the patent office on 2014-07-03 for method for fabricating semiconductor device.
This patent application is currently assigned to Hyundai Motor Company. The applicant listed for this patent is HYUNDAI MOTOR COMPANY. Invention is credited to Dae Hwan Chun, Kyoung-Kook Hong, Youngkyun Jung, Jong Seok Lee.
Application Number | 20140187004 13/830260 |
Document ID | / |
Family ID | 49987813 |
Filed Date | 2014-07-03 |
United States Patent
Application |
20140187004 |
Kind Code |
A1 |
Chun; Dae Hwan ; et
al. |
July 3, 2014 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
Abstract
Disclosed is a method for fabricating a semiconductor device
including: sequentially forming a first insulating film and a first
barrier layer on a first surface of a substrate; etching the first
barrier layer to form a first barrier layer pattern; etching the
first insulating film to form a first insulating film pattern;
removing the first barrier layer pattern and forming a first type
epitaxial layer on an exposed first portion of the substrate;
forming a second insulating film and a second barrier layer on the
first type epitaxial layer and the first insulating film pattern;
etching the second barrier layer to form a second barrier layer
pattern; etching the second insulating film to form a second
insulating film pattern, and etching the first insulating film
pattern; and forming a second type epitaxial layer on an exposed
second portion of the first surface of the n substrate.
Inventors: |
Chun; Dae Hwan; (Gwangmyung
Gyeonggi-Do, KR) ; Lee; Jong Seok; (Suwon, KR)
; Hong; Kyoung-Kook; (Hwaseong, KR) ; Jung;
Youngkyun; (Seoul, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
HYUNDAI MOTOR COMPANY |
Seoul |
|
KR |
|
|
Assignee: |
Hyundai Motor Company
Seoul
KR
|
Family ID: |
49987813 |
Appl. No.: |
13/830260 |
Filed: |
March 14, 2013 |
Current U.S.
Class: |
438/270 |
Current CPC
Class: |
H01L 29/2003 20130101;
H01L 29/66727 20130101; H01L 29/41766 20130101; H01L 29/66734
20130101; H01L 29/7802 20130101; H01L 29/7813 20130101; H01L
29/1608 20130101; H01L 29/66068 20130101; H01L 29/0634
20130101 |
Class at
Publication: |
438/270 |
International
Class: |
H01L 29/66 20060101
H01L029/66 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 31, 2012 |
KR |
10-2012-0158603 |
Claims
1. A method for fabricating a semiconductor device, the method
comprising: sequentially forming a first insulating film and a
first barrier layer on a first surface of an n+ type substrate;
etching the first barrier layer to form a first barrier layer
pattern; etching the first insulating film by using the first
barrier layer pattern as a mask to form a first insulating film
pattern to thereby expose a first portion of a first surface of the
n+ type silicon carbide substrate; removing the first barrier layer
pattern and then forming a first type of epitaxial layer by a first
epitaxial growth on the exposed first portion of the first surface
of the n+ type silicon carbide substrate; sequentially forming a
second insulating film and a second barrier layer on the first type
of epitaxial layer and the first insulating film pattern; etching
the second barrier layer to form a second barrier layer pattern;
etching the second insulating film by using the second barrier
layer pattern as a mask to form a second insulating film pattern,
and etching the first insulating film pattern by using the second
barrier layer pattern as a mask to expose a second portion of the
first surface of the n+ type silicon carbide substrate; and forming
a second type of epitaxial layer by a second epitaxial growth on
the exposed second portion of the first surface of the n+ type
silicon carbide substrate, wherein the first portion of the first
surface of the n+ type silicon carbide substrate and the second
portion of the first surface of the n+ type silicon carbide
substrate are adjacent to each other.
2. The method of claim 1 wherein the an n+ type substrate is an n+
type silicon carbide substrate.
3. The method of claim 1, wherein the first insulating film
pattern, the first type epitaxial layer, and the second type
epitaxial layer have the same thickness.
4. The method of claim 1, wherein the second insulating film
pattern is positioned on the first type of epitaxial layer.
5. The method of claim 4, wherein the first insulating film and the
second insulating film are formed of silicon dioxide, silicon
oxynitride, silicon nitride, amorphous carbon, or combinations
thereof.
6. The method of claim 5, wherein the first barrier layer and the
second barrier layer are formed of amorphous carbon, silicon
dioxide, silicon nitride, nitride, metal, or combinations
thereof.
7. The method of claim 1, further comprising: after the forming of
a second type of epitaxial layer, removing the second insulating
film pattern and then sequentially forming a p+ region and an n+
region on the first type of epitaxial layer and the second-type of
epitaxial layer; forming a trench by penetrating the p+ region and
the n+ region and etching part of the first type epitaxial layer;
forming a gate insulating film within the trench; forming a gate
electrode on the gate insulating film; forming an oxide film on the
gate insulating film and the gate electrode; and forming a source
electrode on the n+ region and the oxide film and forming a drain
electrode on a second surface of the n+ type silicon carbide
substrate.
7. The method of claim 6, wherein the first type of epitaxial layer
is positioned under the gate electrode.
8. The method of claim 7, wherein the first type of epitaxial layer
is an n type epitaxial layer, and the second type of epitaxial
layer is a p type epitaxial layer.
9. The method of claim 7, wherein the first type of epitaxial layer
is a p type epitaxial layer, and the second type of epitaxial layer
is an n type epitaxial layer.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims priority to and the benefit of
Korean Patent Application No. 10-2012-0158603 filed in the Korean
Intellectual Property Office on Dec. 31, 2012, the entire contents
of which are incorporated herein by reference.
BACKGROUND OF THE INVENTION
[0002] (a) Field of the Invention
[0003] The present invention relates to a method for fabricating a
semiconductor device.
[0004] (b) Description of the Related Art
[0005] With the recent trend toward large-sized and large-capacity
application apparatuses, a power semiconductor device having a high
breakdown voltage, a high current capacity, and high-speed
switching characteristics has become necessary.
[0006] The doping concentration and thickness of an epitaxial or
drift region of a raw material used in the fabrication of a power
semiconductor device is determined based on the rated voltage of
the semiconductor device.
[0007] To achieve a high breakdown voltage, the doping
concentration of the epitaxial or drift region needs to be
sufficiently low, or the thickness thereof needs to be sufficiently
large. This may result in an increase in the on-resistance of the
power semiconductor. Thus, a variety of structures are being
proposed to overcome this drawback by structural improvement of the
device. For example, a super junction structure is a representative
structure which shows improvement in breakdown voltage and
on-resistance.
[0008] A super junction structure is a structure in which PN
junctions are vertically arranged in an epitaxial or drift region.
In a power semiconductor having a super junction structure, where a
maximum electric field (i.e., threshold electric field) is observed
when the power semiconductor is in the off state, a PN junction is
formed vertically with respect to a substrate. This causes a
depletion layer to extend horizontally, as well as vertically, to
the substrate. As such, the threshold electric field is reached in
a wide PN junction and its magnitude is constant in a direction
vertical to the substrate.
[0009] As such, a power semiconductor using a super junction
structure has low on-resistance because an epitaxial or drift
region for maintaining a breakdown voltage equivalent to that of a
typical power semiconductor is thin and has a high doping
concentration.
[0010] In general, a super junction structure is formed by
epitaxially growing an N type (or P type) semiconductor or
performing trench etching, i.e., anisotropic etching, on the N type
(or P type) semiconductor and either (a) depositing a P type (or N
type) semiconductor or (b) ion-implanting impurities to form a P
type (or N type) semiconductor.
[0011] Also, an epitaxial or drift region of desired thickness is
formed by repeating the process of epitaxially growing a thin N
type (or P type) semiconductor and ion-implanting impurities to
form a P type (or N type) semiconductor.
[0012] In this method, however, it is difficult to perform high
aspect-ratio anisotropic etching. As a result, it is difficult to
form an epitaxial or drift region of a desired thickness, and PN
junctions may be curved rather than smooth.
[0013] The above information disclosed in this Background section
is only for enhancement of understanding of the background of the
invention and therefore it may contain information that does not
form the prior art that is already known in this country to a
person of ordinary skill in the art.
SUMMARY OF THE INVENTION
[0014] The present invention has been made in an effort to provide
a method for easily forming a super junction structure of a
semiconductor device.
[0015] According to one aspect, the present invention provides a
method for fabricating a semiconductor device, the method
including: sequentially forming a first insulating film and a first
barrier layer on a first surface of an n+ type silicon carbide
substrate; etching the first barrier layer to form a first barrier
layer pattern; etching the first insulating film by using the first
barrier layer pattern as a mask to form a first insulating film
pattern that exposes a first portion of a first surface of the n+
type silicon carbide substrate; removing the first barrier layer
pattern and then forming a first type of epitaxial layer by a first
epitaxial growth on the exposed first portion of the first surface
of the n+ type silicon carbide substrate; sequentially forming a
second insulating film and a second barrier layer on the first type
of epitaxial layer and the first insulating film pattern; etching
the second barrier layer to form a second barrier layer pattern;
etching the second insulating film by using the second barrier
layer pattern as a mask to form a second insulating film pattern,
and etching the first insulating film pattern by using the second
barrier layer pattern as a mask to expose a second portion of the
first surface of the n+ type silicon carbide substrate; and forming
a second type of epitaxial layer by a second epitaxial growth on
the exposed second portion of the first surface of the n+ type
silicon carbide substrate, wherein the first portion of the first
surface of the n+ type silicon carbide substrate and the second
portion of the first surface of the n+ type silicon carbide
substrate are adjacent to each other.
[0016] According to various embodiments, the first insulating film
pattern, the first type of epitaxial layer, and the second type of
epitaxial layer have the same thickness.
[0017] According to various embodiments, the second insulating film
pattern is positioned on the first type of epitaxial layer.
[0018] According to various embodiments, the first insulating film
and the second insulating film are formed of any one or more of
silicon dioxide, silicon oxynitride, silicon nitride, and amorphous
carbon.
[0019] According to various embodiments, the first barrier layer
and the second barrier layer are formed of any one or more of
amorphous carbon, silicon dioxide, silicon nitride, nitride, and
metal.
[0020] According to various embodiments, the method further
includes: after forming the second type of epitaxial layer,
removing the second insulating film pattern and then sequentially
forming a p+ region and an n+ region on the first type of epitaxial
layer and the second-type of epitaxial layer; forming a trench by
penetrating the p+ region and the n+ region and etching part of the
first type of epitaxial layer; forming a gate insulating film
within the trench; forming a gate electrode on the gate insulating
film; forming an oxide film on the gate insulating film and the
gate electrode; and forming a source electrode on the n+ region and
the oxide film and forming a drain electrode on a second surface of
the n+ type silicon carbide substrate.
[0021] According to various embodiments, the first type of
epitaxial layer is positioned under the gate electrode.
[0022] According to various embodiments the first type of epitaxial
layer is an n type epitaxial layer, and the second type epitaxial
layer is a p type epitaxial layer.
[0023] According to various embodiments the first type of epitaxial
layer is a p type epitaxial layer, and the second type of epitaxial
layer is an n type epitaxial layer.
[0024] According to an exemplary embodiment of the present
invention, because an insulating film is etched by using a barrier
layer in the fabrication of a super junction structure of a
semiconductor device, high aspect-ratio anisotropic etching can be
performed. As such, the n type epitaxial layer and the p type
epitaxial layer can be made thicker than in the conventional art.
This offers an advantage in the fabrication of a high-voltage power
semiconductor.
[0025] Moreover, according to the present methods, a PN junction
surface is not curved because an n type epitaxial layer and a p
type epitaxial layer are formed by epitaxial growth.
[0026] Other aspects and exemplary embodiments of the invention are
discussed infra.
BRIEF DESCRIPTION OF THE DRAWINGS
[0027] FIG. 1 to FIG. 12 are views sequentially showing a method
for fabricating a semiconductor device according to an exemplary
embodiment of the present invention.
[0028] FIG. 13 is a view showing a cross-section of a semiconductor
device according to another exemplary embodiment of the present
invention.
[0029] FIG. 14 is a view showing a cross-section of a semiconductor
device according to still another exemplary embodiment of the
present invention.
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0030] Exemplary embodiments of the present invention will be
described in detail with reference to the attached drawings. The
present invention may be modified in many different forms and
should not be construed as being limited to the exemplary
embodiments set forth herein. Rather, the exemplary embodiments of
the present invention are provided so that this disclosure will be
thorough and complete, and will fully convey the concept of the
present invention to those skilled in the art.
[0031] In the drawings, the thickness of layers and regions may be
exaggerated for clarity. In addition, when a layer is described to
be formed on another layer or on a substrate, this means that the
layer may be formed on the other layer or on the substrate, or a
third layer may be interposed between the layer and the other layer
or the substrate. Like numbers refer to like elements throughout
the specification.
[0032] It is understood that the term "vehicle" or "vehicular" or
other similar term as used herein is inclusive of motor vehicles in
general such as passenger automobiles including sports utility
vehicles (SUV), buses, trucks, various commercial vehicles,
watercraft including a variety of boats and ships, aircraft, and
the like, and includes hybrid vehicles, electric vehicles, plug-in
hybrid electric vehicles, hydrogen-powered vehicles and other
alternative fuel vehicles (e.g. fuels derived from resources other
than petroleum). As referred to herein, a hybrid vehicle is a
vehicle that has two or more sources of power, for example both
gasoline-powered and electric-powered vehicles.
[0033] The terminology used herein is for the purpose of describing
particular embodiments only and is not intended to be limiting of
the invention. As used herein, the singular forms "a," "an" and
"the" are intended to include the plural forms as well, unless the
context clearly indicates otherwise. It will be further understood
that the terms "comprises" and/or "comprising," when used in this
specification, specify the presence of stated features, integers,
steps, operations, elements, and/or components, but do not preclude
the presence or addition of one or more other features, integers,
steps, operations, elements, components, and/or groups thereof. As
used herein, the term "and/or" includes any and all combinations of
one or more of the associated listed items.
[0034] Unless specifically stated or obvious from context, as used
herein, the term "about" is understood as within a range of normal
tolerance in the art, for example within 2 standard deviations of
the mean. "About" can be understood as within 10%, 9%, 8%, 7%, 6%,
5%, 4%, 3%, 2%, 1%, 0.5%, 0.1%, 0.05%, or 0.01% of the stated
value. Unless otherwise clear from the context, all numerical
values provided herein are modified by the term "about".
[0035] Hereinafter, a method for fabricating a semiconductor device
according to an exemplary embodiment of the present invention will
be described in detail with reference to FIGS. 1 to 12.
[0036] FIG. 1 to FIG. 12 are views sequentially showing a method
for fabricating a semiconductor device according to an exemplary
embodiment of the present invention.
[0037] As shown in FIG. 1, an n+ type silicon carbide substrate 100
is prepared, a first insulating film 200 is formed on a first
surface ("top surface") of the n+ type silicon carbide substrate
100, and then a first barrier layer 210 is formed on the first
insulating film 200 such that the first insulating film 200 is
disposed between the substrate 100 and the a first barrier layer
210.
[0038] The first insulating film 200 may be formed of any
conventional insulating materials, and preferably is formed of
silicon dioxide (SiO.sub.2), silicon oxynitride (SiON), silicon
nitride (SiN), amorphous carbon, or combinations thereof. The first
barrier layer 210 may be formed of any conventional barrier layer
materials, and preferably is formed of amorphous carbon, silicon
dioxide, silicon nitride, nitride, various metals, or combinations
thereof.
[0039] The first barrier layer 210 has a high etching selection
ratio in the etching of the first insulating film 200. As depicted,
for example, in FIG. 2, the first surface of the n+ type silicon
carbide substrate 100 includes a first portion A and a second
portion B adjacent to the first portion A.
[0040] As shown in FIG. 2, the first barrier layer 210 is etched to
form a first barrier layer pattern 215, and then the first
insulating film 200 is etched by using the first barrier layer
pattern 215 as a mask to form a first insulating film pattern 205.
Because high aspect-ratio anisotropic etching can be performed on
the first insulating film 200 by using the first barrier layer 210,
there is no limitation to the thickness of the first insulating
film 200. At this point, the first portion A of the first surface
of the n+ type silicon carbide substrate 100 is exposed.
[0041] As shown in FIG. 3, the first barrier layer pattern 215 is
removed, and then an n type epitaxial layer 300 is formed by a
first epitaxial growth on the exposed first portions A of the first
surface of the n+ type silicon carbide substrate 100. Epitaxial
growth does not occur in the portions where the first insulating
film pattern 205 is provided. As shown, the n type epitaxial layer
300 is positioned in between and about the first insulating film
pattern 205, and the height of the n type epitaxial layer 300 is
equal to the height of the first insulating film pattern 205.
[0042] As shown in FIG. 4, a second insulating film 220 and a
second barrier layer 230 are sequentially formed on the n type
epitaxial layer 300 and the first insulating film pattern 205.
[0043] According to embodiments of the present invention, the
second insulating film 220 may be formed of silicon dioxide
(SiO.sub.2), silicon oxynitride (SiON), silicon nitride (SiN),
amorphous carbon, or combinations thereof. The second barrier layer
230 may be formed of amorphous carbon, silicon dioxide, silicon
nitride, nitride, various metals, or combinations thereof.
[0044] As shown in FIGS. 5 and 6, the second barrier layer 230 is
etched to form a second barrier layer pattern 235 (FIG. 5), and
then the second insulating film 220 is etched by using the second
barrier layer 235 as a mask to form a second insulating film
pattern 225 (FIG. 6). As shown, the first insulating film pattern
205 is etched by using the second barrier layer pattern 235 as a
mask to thereby expose the second portion B of the first surface of
the n+ type silicon carbide substrate 100. The second insulating
film pattern 225 is positioned on the n type epitaxial layer
300.
[0045] As shown in FIG. 7, a p type epitaxial layer 400 is formed
by a second epitaxial growth on the exposed second portion B of the
first surface of the n+ type silicon carbide substrate 100.
Epitaxial growth does not occur in the portion where the second
insulating film pattern 225 is provided. Further, as shown, the
height of the p type epitaxial layer 400 is equal to the height of
the n type epitaxial layer 300, and the p type epitaxial layer 400
is positioned in between the n type epitaxial layer 300. Thus, the
p type epitaxial layer 400 and the n type epitaxial layer 300 form
a PN junction. Further, the PN junction surface is not curved
because the n type epitaxial layer 300 and the p type epitaxial
layer 400 are formed by the first and second epitaxial growths,
respectively.
[0046] As shown in FIGS. 8 and 9, after the second insulating film
pattern 225 is removed (see FIGS. 7-8), a p+ region 500 and an n+
region 600 are sequentially formed on the n type epitaxial layer
300 and the p type epitaxial layer 400 (FIG. 9).
[0047] As shown in FIG. 10, a trench 650 is formed by penetrating
the p+ region 500 and the n+ region 600 and etching part of the n
type epitaxial layer 300. A gate insulating film 700 is then formed
within the trench 650, and then a gate electrode 800 is formed on
the gate insulating film 700 (FIG. 11). As shown, the gate
electrode 800 is preferably configured and arranged so as to
substantially fill the trench 650. As shown in FIG. 11, the gate
electrode 800 is disposed so as to be positioned above the n type
epitaxial layer 300. Further, a portion of the n+ region 600 is
removed at opposing sides opposite the trench 650 to expose part of
the p+ region 500 (see FIGS. 11-12).
[0048] As shown in FIG. 12, an oxide film 710 is formed on the gate
electrode 800 and the gate insulating film 700. Thereafter, a
source electrode 900 is formed on the exposed part of the p+ region
500, the n+ region 600, and the oxide film 710. Further, a drain
electrode 950 is formed on a second surface of the n+ type silicon
carbide substrate 100 (i.e. a surface opposite the first surface,
"bottom surface").
[0049] According to the present methods, high aspect-ratio
anisotropic etching can be performed because the first insulating
film 200 is etched by using the first barrier layer 210. Therefore,
there is no limitation to the thickness of the first insulating
film 200. As such, the n type epitaxial layer 300 and the p type
epitaxial layer 400, which can be formed having the same thickness
as the first insulating film 200, may be made thicker than in the
conventional art. This offers an advantage in the fabrication of a
high-voltage power semiconductor.
[0050] A semiconductor device according to another exemplary
embodiment of the present invention will now be described with
reference to FIG. 13.
[0051] FIG. 13 is a view showing a cross-section of a semiconductor
device according to another exemplary embodiment of the present
invention.
[0052] As shown in FIG. 13, the semiconductor device is identical
to the above semiconductor device of FIG. 12 except that the p type
epitaxial layer 400 is positioned under the gate electrode 800.
[0053] In particular, a p type epitaxial layer 400 and an n type
epitaxial layer 300 are formed on a first surface of an n+ type
silicon carbide substrate 100 by second and first epitaxial
growths, and then a p+ region 500 and an n+ region 600 are
sequentially formed on the n type epitaxial layer 300 and the p
type epitaxial layer 400, respectively.
[0054] Next, a trench 650 is formed by penetrating the p+ region
500 and the n+ region 600 and etching part of the p type epitaxial
layer 400. Thereafter, a gate insulating film 700 is formed within
the trench 650, and a gate electrode 800 is formed on the gate
insulating film 700. Further, a portion of the p+ region 500 is
removed at opposing sides opposite the trench 650 to expose part of
the n+ region 600.
[0055] Next, an oxide film 710 is then formed on the gate electrode
800 and the gate insulating film 700. Then a source electrode 900
is formed on the exposed part of the p+ region 500, the n+ region
600, and the oxide film 710. A drain electrode 950 is then formed
on a second surface of the n+ type silicon carbide substrate 100
(i.e. a surface opposite the first surface, "bottom surface").
[0056] A semiconductor device according to still another exemplary
embodiment of the present invention will now be described with
reference to FIG. 14.
[0057] FIG. 14 is a view showing a cross-section of a semiconductor
device according to still another exemplary embodiment of the
present invention.
[0058] As shown in FIG. 14, the semiconductor device has no trench
formed therein, unlike the semiconductor devices of FIGS. 12 and
13.
[0059] The semiconductor device of FIG. 14 can, for example, be
formed by disposing an n type epitaxial layer 300 and a p type
epitaxial layer 400 on a first surface of an n+ type silicon
carbide substrate 100. The n type epitaxial layer 300 and the p
type epitaxial layer 400 are formed by epitaxial growth. The n type
epitaxial layer 300 and the p type epitaxial layer 400 can be
formed by using an insulating film and a barrier layer in the same
way as in the foregoing embodiments.
[0060] A p-well region 450 can then be disposed in the n type
epitaxial layer 300 and the p type epitaxial layer 400. It is noted
that while the p-well region 450 is depicted in a curved shape in
FIG. 14, the specific curved configuration could also be provided
in various other suitable geometries. Thereafter, an n+ region 600
and a p+ region 500 are disposed side-by-side on the p-well region
450. Of course, the n+ region 600 and a p+ region 500 are not
limited to the specific positioning as depicted and could, for
example, be provided side-by-side with their positions swapped, and
could even suitably be provided layered on top of each other, if
desired.
[0061] A gate insulating film 700 is then disposed on the n type
epitaxial layer 300, the p-well region 450, and part of the n+
region 600, and a gate electrode 800 is disposed on at least a
portion of the gate insulating film 700.
[0062] A source electrode 900 is disposed on part of the n+ region
600 and the p+ region 500 not covered by the gate insulating film
700, and a drain electrode 950 is disposed on a second surface of
the n+ type silicon carbide substrate 100 (i.e. a surface opposite
the first surface, "bottom surface").
[0063] Although the foregoing exemplary embodiments have been
described with respect to a MOSFET (metal oxide semiconductor field
effect transistor), which is a type of power semiconductor, the
present invention is not limited to these exemplary embodiments.
Rather, the fabrication method of a super junction structure of the
present invention may be applied to other types of power
semiconductors.
[0064] For example, the fabrication method of a super junction
structure according to the present exemplary embodiment may be
applied to a diode, a bipolar junction transistor (BJT), an
insulated gate bipolar transistor (GBT), a thyristor, etc.
[0065] Therefore, the fabrication method of a super junction
structure according to the present exemplary embodiment may be
applied to a p+ type silicon carbide substrate, as well as an n+
type silicon carbide substrate.
[0066] Moreover, the fabrication method of a super junction
structure according to the present exemplary embodiment may also be
applied to, for example, a silicon substrate and a gallium nitride
(GaN) substrate, as well as a silicon carbide substrate.
[0067] While this invention has been described in connection with
what is presently considered to be practical exemplary embodiments,
it is to be understood that the invention is not limited to the
disclosed embodiments, but, on the contrary, is intended to cover
various modifications and equivalent arrangements included within
the spirit and scope of the appended claims.
TABLE-US-00001 <Description of symbols> 100: n+ type silicon
carbide substrate 200: first insulating film 210: first barrier
layer 220: second insulating film 230: second barrier layer 300: n
type epitaxial layer 400: p type epitaxial layer 450: p-well region
500: p+ region 600: n+ region 650: trench 700: gate insulating film
710: oxide film 800: gate electrode 900: source electrode 950:
drain electrode
[0068] While this invention has been described in connection with
what is presently considered to be practical exemplary embodiments,
it is to be understood that the invention is not limited to the
disclosed embodiments, but, on the contrary, is intended to cover
various modifications and equivalent arrangements included within
the spirit and scope of the appended claims.
* * * * *