U.S. patent application number 13/797819 was filed with the patent office on 2014-06-26 for method of magnetic meida manufacturing.
The applicant listed for this patent is Michael Feldbaum, David Kuo, Koichi Wago. Invention is credited to Michael Feldbaum, David Kuo, Koichi Wago.
Application Number | 20140175051 13/797819 |
Document ID | / |
Family ID | 50973459 |
Filed Date | 2014-06-26 |
United States Patent
Application |
20140175051 |
Kind Code |
A1 |
Feldbaum; Michael ; et
al. |
June 26, 2014 |
METHOD OF MAGNETIC MEIDA MANUFACTURING
Abstract
The embodiments disclose a method of creating a mask by
depositing a protection layer that mechanically strengthens
patterned features that are imprinted into a resist layer that is
deposited onto a magnetic layer, implanting mechanically
strengthened patterned resist layer features into the magnetic
layer using ion implantation and removing the resist layer and the
mask to expose at least a portion of the magnetic layer.
Inventors: |
Feldbaum; Michael; (San
Jose, CA) ; Wago; Koichi; (Sunnyvale, CA) ;
Kuo; David; (Palo Alto, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Feldbaum; Michael
Wago; Koichi
Kuo; David |
San Jose
Sunnyvale
Palo Alto |
CA
CA
CA |
US
US
US |
|
|
Family ID: |
50973459 |
Appl. No.: |
13/797819 |
Filed: |
March 12, 2013 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
61745510 |
Dec 21, 2012 |
|
|
|
Current U.S.
Class: |
216/22 ; 118/721;
156/345.3; 427/526; 428/172 |
Current CPC
Class: |
C23C 14/0605 20130101;
G11B 5/84 20130101; C23C 14/48 20130101; G11B 5/8408 20130101; C23C
14/08 20130101; Y10T 428/24612 20150115; G11B 5/855 20130101 |
Class at
Publication: |
216/22 ; 427/526;
118/721; 156/345.3; 428/172 |
International
Class: |
G11B 5/84 20060101
G11B005/84 |
Claims
1. A method comprising: depositing a conformal protection layer on
a resist layer of a substrate, the substrate comprising the resist
layer over a magnetic layer, the resist layer comprising one or
more resist features, wherein the resist features define one or
more magnetic recording features; and creating the magnetic
recording features in areas not underneath the resist features
through ion implantation.
2. (canceled)
3. The method of claim 1, wherein the deposition of the conformal
protection layer comprises performing chemical vapor deposition
(CVD).
4. The method of claim 1, wherein the conformal protection layer
comprises carbon (C), cyanide (CN), or silicon carbide (SiC).
5. The method of claim 1, further comprising etching at least a
portion of the conformal protection layer by performing an
isotropic plasma etch.
6-7. (canceled)
8. The method of claim 1, further comprising lifting off residue of
the resist layer using solvent, baking and plasma strip processes
separately or in combination.
9-20. (canceled)
21. An apparatus, comprising: means for depositing a conformal
protection layer on a resist layer of a substrate, the substrate
comprising the resist layer over a magnetic layer, the resist layer
comprising one or more resist features, wherein the resist features
define one or more magnetic recording features; and an ion
implantation system configured to create the magnetic recording
features in areas not underneath the resist features.
22. The apparatus of claim 21, wherein the means for depositing the
conformal protection layer comprises a chemical vapor deposition
(CVD) system.
23. The apparatus of claim 21, wherein the conformal protection
layer comprises carbon (C), cyanide (CN), or silicon carbide
(SiC).
24. The apparatus of claim 21, further comprising an isotropic
plasma etcher configured to etch at least a portion of the
conformal protection layer.
25. The apparatus of claim 21, further comprising means for lifting
off residue of the resist layer using solvent, baking and plasma
strip processes separately or in combination.
26. The apparatus of claim 21, further comprising a chemical vapor
deposition system configured to deposit a carbon over-coat (COC)
layer.
27. The apparatus of claim 21, further comprising a sputtering
system configured to deposit a carbon over-coat (COC) layer.
28. An apparatus comprising: a deposition system configured to
deposit a conformal protection layer on a resist layer of a
substrate, the substrate comprising the resist layer over a
magnetic layer, the resist layer comprising one or more resist
features, wherein the resist features define one or more magnetic
recording features; and an ion implantation system for creating the
magnetic recording features in areas not underneath the resist
features.
29. The apparatus of claim 28, wherein the deposition system
comprises a chemical vapor deposition (CVD) system.
30. The apparatus of claim 28, wherein the conformal protection
layer comprises carbon (C), cyanide (CN), or silicon carbide
(SiC).
31. The apparatus of claim 28, further comprising an isotropic
plasma etcher configured to etch at least a portion of the
conformal protection layer.
32. The apparatus of claim 28, further comprising means for lifting
off residue of the resist layer using solvent, baking and plasma
strip processes separately or in combination.
33. The apparatus of claim 28, further comprising a chemical vapor
deposition system configured to deposit a carbon over-coat (COC)
layer.
34. The apparatus of claim 28, further comprising a sputtering
system configured to deposit a carbon over-coat (COC) layer.
35. The method of claim 1, further comprising depositing a carbon
over-coat (COC) layer over the magnetic layer through CVD.
Description
BACKGROUND
[0001] Patterning of recording stacks may have side-effects
including size deformation and feature position shifting in stacks
including bit-patterned media (BPM) as feature densities have
increased for example a density of 0.5 Tera dots per square inch
(Td/in.sup.2) and above.
BRIEF DESCRIPTION OF THE DRAWINGS
[0002] FIG. 1 shows a block diagram of an overview of a method of
magnetic media manufacturing of one embodiment.
[0003] FIG. 2A shows a block diagram of an overview flow chart of a
method of magnetic media manufacturing of one embodiment.
[0004] FIG. 2B shows a block diagram of an overview flow chart of
fabricating a conformal protection layer stop of one
embodiment.
[0005] FIG. 2C shows a block diagram of an overview flow chart of
the fabrication of a high selectivity mask of one embodiment.
[0006] FIG. 3 shows a block diagram of an overview flow chart of
patterning the magnetic layer of one embodiment.
[0007] FIG. 4A shows for illustrative purposes only an example of a
first thickness of conformal protection layer of one
embodiment.
[0008] FIG. 4B shows for illustrative purposes only an example of a
partial etch-back and planarization of conformal protection layer
of one embodiment.
[0009] FIG. 4C shows for illustrative purposes only an example of
lifting off mask residue of one embodiment.
[0010] FIG. 5A shows for illustrative purposes only an example of a
conformal protection layer stop of one embodiment.
[0011] FIG. 5B shows for illustrative purposes only an example of a
deposition of third thickness of conformal protection layer of one
embodiment.
[0012] FIG. 5C shows for illustrative purposes only an example of
ion beam exposure of one embodiment.
[0013] FIG. 5D shows for illustrative purposes only an example of
conformal protection layer patterned magnetic layer recording
features of one embodiment.
DETAILED DESCRIPTION OF THE INVENTION
[0014] In a following description, reference is made to the
accompanying drawings, which form a part hereof, and in which is
shown by way of illustration a specific example in which the
invention may be practiced. It is to be understood that other
embodiments may be utilized and structural changes may be made
without departing from the scope of the present embodiments.
General Overview:
[0015] It should be noted that the descriptions that follow, for
example, in terms of a method of magnetic media manufacturing is
described for illustrative purposes and the underlying system can
apply to any number and multiple types of stacks. In one
embodiment, the conformal protection layer can be configured using
a first thickness of conformal protection layer materials. The
conformal protection layer can be configured to include a
sacrificial layer of a second thickness of conformal protection
layer materials and can be configured to include a third thickness
of conformal protection layer materials of one embodiment.
[0016] FIG. 1 shows a block diagram of an overview of a method of
magnetic media manufacturing of one embodiment. FIG. 1 shows a
conformal deposition of a protection layer on imprinted resist
layer on a magnetic layer on top of a substrate 100. The conformal
deposition of a protection layer on imprinted resist layer on a
magnetic layer on top of a substrate 100 is processed using a
partial etch-back and planarization to create a mask 110. The mask
is used for patterning the magnetic layer by ion beam exposure for
ion implantation 120. Cleaning mask residue above the magnetic
layer by lifting it off 130 prepares the patterned magnetic layer
for a deposition of a carbon over coat (COC) layer 140 of one
embodiment.
[0017] The conformal deposition of a protection layer on imprinted
resist layer on a magnetic layer on top of a substrate 100 is used
for bonding imprint resist features 150 and protecting imprint
resist features from damage caused by other processing 154 and
eliminates a de-scum process 170. The partial etch-back and
planarization to create a mask 110 eliminates a reverse tone mask
formation process 180 releasing stress formed during processes
including reverse tone mask formation 158. Lessening the number of
steps used in stack fabrication processing 190 and using the
conformal protection layer created mask is used for reducing
pattern feature size deformation and dislocations 160 thereby
increasing pattern feature uniformity 165 in patterned stacks
including bit patterned media (BPM) including BPM with pattern
densities greater than 0.5 Tera dots per square inch (Td/in.sup.2)
of one embodiment.
Detailed Description:
[0018] FIG. 2A shows a block diagram of an overview flow chart of a
method of magnetic media manufacturing of one embodiment. FIG. 2A
shows an imprinted resist layer deposited on a magnetic layer on
top of a substrate 200. A conformal deposition of protection layer
on the imprinted resist layer 205 eliminates a de-scum process 170.
The conformal deposition of protection layer on the imprinted
resist layer 205 and is used for protecting imprint resist features
from damage caused by other processing 154 by bonding imprint
resist features 150 of FIG. 1. In one embodiment a first thickness
of conformal protection layer materials 210 is deposited on the
imprinted resist layer including using chemical vapor deposition
(CVD) 212 and atomic-layer deposition (ALD) 214. Conformal
protection layer materials 220 include for example carbon (C) 222,
cyanide (CN) 224, silicon carbide (SiC) 226, titanium oxides
(Ti.sub.xO.sub.y) 228, tantalum oxides (Ta.sub.xO.sub.y) 230,
tantalum (Ta) 232, tungsten (W) 234 and other materials 236 of one
embodiment.
[0019] The first thickness of conformal protection layer materials
210 is processed using a partial etch-back and planarization 110
including an isotropic plasma etch 240 and slanted beam milling 242
to a level above the tops of the imprinted resist layer 244
creating a mask 246. Creating a mask 246 eliminates a reverse tone
mask formation process 180. Processing description continue as
shown in FIG. 3 of one embodiment.
Conformal Protection Layer Stop:
[0020] FIG. 2B shows a block diagram of an overview flow chart of
fabricating a conformal protection layer stop of one embodiment.
FIG. 2B shows another embodiment continuing from FIG. 2A including
a conformal deposition of a second thickness of conformal
protection layer stop 250. The conformal deposition of a second
thickness of conformal protection layer stop 250 includes using
chemical vapor deposition (CVD) 212 and atomic-layer deposition
(ALD) 214. The conformal protection layer materials 220 include for
example carbon (C) 222, cyanide (CN) 224, silicon carbide (SiC)
226, titanium oxides (Ti.sub.xO.sub.y) 228, tantalum oxides
(Ta.sub.xO.sub.y) 230, tantalum (Ta) 232, tungsten (W) 234 and
other materials 236. The conformal deposition of a second thickness
of conformal protection layer stop 250 is used to deposit a
sacrificial layer of thin film on the surfaces of the imprinted
resist features 252 to create a conformal protection layer stop
254. A conformal deposition of a third thickness of conformal
protection layer materials 260 using chemical vapor deposition
(CVD) 212 and atomic-layer deposition (ALD) 214. Continuing
processes are further described in FIG. 2C of one embodiment.
High Selectivity Mask:
[0021] FIG. 2C shows a block diagram of an overview flow chart of
the fabrication of a high selectivity mask of one embodiment. FIG.
2C shows a continuation from FIG. 2B wherein the conformal
protection layer materials 220 include for example carbon (C) 222,
cyanide (CN) 224, silicon carbide (SiC) 226, titanium oxides
(Ti.sub.xO.sub.y) 228, tantalum oxides (Ta.sub.xO.sub.y) 230,
tantalum (Ta) 232, tungsten (W) 234 and other materials 236. The
conformal deposition of a third thickness of conformal protection
layer materials 260 of FIG. 2B is filling the thin film coated
imprinted resist features on top of conformal protection layer stop
262 to a level above the tops of the imprinted resist layer
264.
[0022] A partial etch-back and planarization of the third thickness
of conformal deposited materials 270 using processes including an
isotropic plasma etch 240 and slanted beam milling 242 to the
conformal protection layer stops on the tops of the imprinted
resist features 272 creating a high selectivity mask 280. Creating
a high selectivity mask 280 eliminates a reverse tone mask
formation process 180 releasing stress formed during reverse tone
mask formation 274. Further processing is described in FIG. 3 of
one embodiment.
Patterning the Magnetic Layer:
[0023] FIG. 3 shows a block diagram of an overview flow chart of
patterning the magnetic layer of one embodiment. FIG. 3 shows
processes continuing from FIG. 2A and FIG. 2C including patterning
the magnetic layer using ion beam exposure 300 to create ion
implantation 310. Patterning the magnetic layer using ion beam
exposure 300 that passes through the conformal protection layer
mask and imprinted resist layer and using ion implantation 310
creates ion implanted magnetic layer materials 312 and magnetic
layer magnetic patterned recording features 314. The magnetic layer
magnetic patterned recording features 314 include for example
patterned stack features including bit patterned media (BPM)
including BPM with pattern densities greater than 0.5 Tera dots per
square inch (Td/in.sup.2) of one embodiment.
[0024] Following ion implantation 310 cleaning mask and resist
residue above the magnetic layer by lifting it off 130 includes
using lift off cleaning processes 320 including solvent 322, baking
324 and plasma strip 326. The lift off cleaning processes 320
includes using solvent, baking and plasma strip processes
separately or in combinations prior to a deposition of a carbon
over coat (COC) layer 140. The deposition of carbon over coat (COC)
layer protects the patterned magnetic layer during back-end
processing including lube, buff, etc. 340.
[0025] Lessening the number of steps used in stack fabrication
processing 190 produces reduced cost of stack manufacturing 330.
The conformal protection layer protecting imprint resist features
from damage caused by other processing 154 by bonding imprint
resist features 150 of FIG. 1 is used for reducing pattern feature
size deformation and dislocations 160 thereby increasing pattern
feature uniformity 165 in patterned stacks of one embodiment.
First Thickness of Conformal Protection Layer:
[0026] FIG. 4A shows for illustrative purposes only an example of a
first thickness of conformal protection layer of one embodiment.
FIG. 4A shows an imprinted resist layer 404 on top of a magnetic
layer 402 deposited on a substrate 400. The magnetic layer 402
includes materials for example cobalt, chromium and platinum
(CoCrPt). The substrate 400 includes materials for example quartz
and silicon (Si). The imprinted resist layer 404 includes imprinted
resist features 406. A deposition of a first thickness of conformal
protection layer 410 is processed using atomic-layer deposition
(ALD) 214. The deposition of a first thickness of conformal
protection layer 410 is used to create the first thickness of
conformal protection layer materials 210 on top of the imprinted
resist features 406. Descriptions of continuing processes follow in
FIG. 4B of one embodiment.
Partial Etch-Back and Planarization:
[0027] FIG. 4B shows for illustrative purposes only an example of a
partial etch-back and planarization of conformal protection layer
of one embodiment. FIG. 4B shows processes continuing from FIG. 4A
including a partial etch-back and planarization of the first
thickness of conformal protection layer 430. The partial etch-back
and planarization of the first thickness of conformal protection
layer 430 is performed using slanted beam milling 242 down to a
level above the tops of the imprinted resist features 406. An
etch-backed first thickness of conformal protection layer 440 is
used for creating a mask 246 to transfer the patterns of the
imprinted resist features 406 into the magnetic layer 402 deposited
on the substrate 400 of one embodiment.
[0028] An ion implantation in magnetic layer 450 using ion beam
exposure 455 is used to pattern the magnetic layer 402 using the
imprinted resist features 406 and mask. The ion beam exposure 455
passes through the etch-backed first thickness of conformal
protection layer 440 and imprinted resist features 406 into the
magnetic layer 402 to the substrate 400. The ion beam exposure 455
is used for creating ion implanted magnetic layer materials 312 and
magnetic layer magnetic patterned recording features 314 including
for example dots in a bit patterned media (BPM) of one embodiment.
The processing is further described in FIG. 4C.
Lifting Off Mask Residue:
[0029] FIG. 4C shows for illustrative purposes only an example of
LIFTING OFF mask residue of one embodiment. FIG. 4C shows
descriptions of processes that continue from FIG. 4B including
cleaning mask and resist residue above the magnetic layer 470.
Cleaning mask and resist residue above the magnetic layer 470
includes using a lift off using solvent and baking 475. The
cleaning mask and resist residue above the magnetic layer 470 is
exposing the ion implanted magnetic layer materials 312 and
magnetic layer magnetic patterned recording features 314 in the
magnetic layer 402 above the substrate 400.
[0030] The deposition of a carbon over coat (COC) layer 140 uses
chemical vapor deposition (CVD) 212 in creating a COC protection
layer 490. Creating a COC protection layer 490 is used for
protecting the ion implanted magnetic layer materials 312 and
magnetic layer magnetic patterned recording features 314 in the
magnetic layer 402 above the substrate 400 prior to fabrication
processes that follow of one embodiment.
Conformal Protection Layer Stop:
[0031] FIG. 5A shows for illustrative purposes only an example of a
conformal protection layer stop of one embodiment. FIG. 5A shows
the imprinted resist features 406 in the imprinted resist layer 404
on top of the magnetic layer 402 deposited on top of the substrate
400. A deposition of a second thickness of conformal protection
layer stop 500 using atomic-layer deposition (ALD) 214 is creating
a conformal protection layer stop 515. The deposition of a second
thickness of conformal protection layer stop 500 is a thin film on
the surfaces of the imprinted resist features 406. The conformal
protection layer stop 510 is bonding imprint resist features 150 of
FIG. 1 of one embodiment. A continuation of the processing is
described in FIG. 5B.
Deposition of Third Thickness of Conformal Protection Layer:
[0032] FIG. 5B shows for illustrative purposes only an example of a
deposition of third thickness of conformal protection layer of one
embodiment. FIG. 5B shows a continuation from FIG. 5A that includes
a deposition of third thickness of conformal protection layer 520
using the chemical vapor deposition (CVD) 212 on top of the
conformal protection layer stop 510. The deposition of third
thickness of conformal protection layer 520 is filling the thin
film coated imprinted resist features 406 with a third thickness of
materials to a level above the tops of the conformal protection
layer stop 510 of one embodiment.
[0033] A process is used for etching back the third thickness of
conformal protection layer to the stop 530 using an isotropic
plasma etch back 534. The etching back to conformal protection
layer stop 510 creates an etched back third thickness of conformal
protection layer 540 used for creating a high selectivity mask 538.
Creating a high selectivity mask 538 is used for transferring the
imprinted resist features 406 of the imprinted resist layer 404 to
the magnetic layer 402 deposited on the substrate 400 of one
embodiment. The processing is further described in FIG. 5C.
Ion Beam Exposure:
[0034] FIG. 5C shows for illustrative purposes only an example of
ion beam exposure of one embodiment. FIG. 5C shows continued
processing from FIG. 5B including the ion implantation in the
magnetic layer 450 using the ion beam exposure 455 of the magnetic
layer 402. The ion beam exposure 455 through the etched back third
thickness of conformal protection layer 540, conformal protection
layer stop 510 and imprinted resist layer 404 is used for
patterning the magnetic layer 402 with the imprinted resist
features 406 down to the substrate 400. The ion implantation in the
magnetic layer 450 is creating ion implanted magnetic layer
materials 312 and magnetic layer magnetic patterned recording
features 314 for example dots in a bit patterned media (BPM) of one
embodiment.
[0035] The cleaning mask and resist residue above the magnetic
layer 470 using a lift off using baking and plasma strip 550 is
removing the etched back third thickness of conformal protection
layer 540, conformal protection layer stop 510 and imprinted resist
layer 404. The cleaning mask and resist residue above the magnetic
layer 470 is exposing the ion implanted magnetic layer materials
312 and magnetic layer magnetic patterned recording features 314 in
the magnetic layer 402 of one embodiment. Descriptions of
continuing processes are shown in FIG. 5D.
Patterned Magnetic Layer Recording Features:
[0036] FIG. 5D shows for illustrative purposes only an example of
conformal protection layer patterned magnetic layer recording
features of one embodiment. FIG. 5D shows processing continuing
from FIG. 5C that includes the deposition of a carbon over coat
(COC) layer 140. The deposition of a carbon over coat (COC) layer
140 includes using a sputtering process 560 on top of the magnetic
layer 402 to protect the ion implanted magnetic layer materials 312
and magnetic layer magnetic patterned recording features 314 in the
magnetic layer 402 on the substrate 400. The method of magnetic
media manufacturing using the conformal protection layer high
selectivity mask 538 is reducing pattern feature size deformation
and dislocations 160 and increasing pattern feature uniformity 165
in patterned stacks including bit patterned media (BPM) including
BPM with pattern densities greater than 0.5 Tera dots per square
inch (Td/in.sup.2) of one embodiment.
[0037] The foregoing has described the principles, embodiments and
modes of operation of the present embodiments. However, the
invention should not be construed as being limited to the
particular embodiments discussed. The above described embodiments
should be regarded as illustrative rather than restrictive, and it
should be appreciated that variations may be made in those
embodiments by workers skilled in the art without departing from
the scope of the present embodiments as defined by the following
claims.
* * * * *