U.S. patent application number 14/091605 was filed with the patent office on 2014-05-29 for plasma antenna and apparatus for generating plasma having the same.
This patent application is currently assigned to SEMES CO., LTD.. The applicant listed for this patent is Semes Co., Ltd.. Invention is credited to Il Gyo KOO, Soojin LEE, Harutyun MELIKYAN, Hyo Seong SEONG.
Application Number | 20140144584 14/091605 |
Document ID | / |
Family ID | 50772228 |
Filed Date | 2014-05-29 |
United States Patent
Application |
20140144584 |
Kind Code |
A1 |
KOO; Il Gyo ; et
al. |
May 29, 2014 |
PLASMA ANTENNA AND APPARATUS FOR GENERATING PLASMA HAVING THE
SAME
Abstract
Provided are a plasma antenna and a plasma generating apparatus
including the same. The plasma antenna includes a first antenna
inducing electromagnetic fields by using an RF signal, a second
antenna inducing electromagnetic fields by using the RF signal, and
a capacitor connected between an input terminal of the first
antenna and an input terminal of the second antenna.
Inventors: |
KOO; Il Gyo; (Cheonan-si,
KR) ; MELIKYAN; Harutyun; (Cheonan-si, KR) ;
SEONG; Hyo Seong; (Changwon-si, KR) ; LEE;
Soojin; (Seoul, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Semes Co., Ltd. |
Cheonan-si |
|
KR |
|
|
Assignee: |
SEMES CO., LTD.
Cheonan-si
KR
|
Family ID: |
50772228 |
Appl. No.: |
14/091605 |
Filed: |
November 27, 2013 |
Current U.S.
Class: |
156/345.48 ;
315/34 |
Current CPC
Class: |
H01J 37/32091 20130101;
H01J 37/32183 20130101; H01J 37/32174 20130101; H01J 37/3211
20130101 |
Class at
Publication: |
156/345.48 ;
315/34 |
International
Class: |
H01J 37/32 20060101
H01J037/32 |
Foreign Application Data
Date |
Code |
Application Number |
Nov 29, 2012 |
KR |
10-2012-0137143 |
Dec 27, 2012 |
KR |
10-2012-0154646 |
Claims
1. A plasma antenna comprising: a first antenna inducing
electromagnetic fields by using an RF signal; a second antenna
inducing electromagnetic fields by using the RF signal; and a
capacitor connected between an input terminal of the first antenna
and an input terminal of the second antenna.
2. The plasma antenna of claim 1, wherein the first antenna
comprises a first RF feed receiving the RF signal and having a
pillar shape and a first coil connected to the first RF feed, and
the second antenna comprises a second RF feed receiving the RF
signal and having a hollow pillar shape surrounding the first RF
feed and a second coil connected to the second RF feed.
3. The plasma antenna of claim 2, wherein the capacitor is
constituted by the first RF feed, the second RF feed, and a
dielectric disposed between the first RF feed and the second RF
feed.
4. The plasma antenna of claim 2, wherein the first RF feed has a
cylindrical shape, and the second RF feed has a hollow cylindrical
shape surrounding the cylindrical shape.
5. The plasma antenna of claim 2, wherein the first and second RF
feeds are coaxially disposed with respect to each other.
6. The plasma antenna of claim 3, wherein the dielectric comprises
a polymer or metal oxide.
7. The plasma antenna of claim 6, wherein the polymer comprises
Teflon, ULTEM, or polyetheretherketone (PEEK).
8. The plasma antenna of claim 6, wherein the metal oxide comprises
ceramic.
9. The plasma antenna of claim 8, wherein the ceramic comprises
Al.sub.2O.sub.3 or ZnO.
10. The plasma antenna of claim 2, wherein the plasma antenna
comprises a plurality of capacitors along a longitudinal axis of
each of the first and second RF feeds.
11. The plasma antenna of claim 10, wherein the plurality of
capacitors are constituted by the first RF feed, the second RF
feed, and a plurality of dielectrics disposed between the first and
second RF feeds.
12. The plasma antenna of claim 11, wherein the plurality of
dielectrics are spaced a predetermined distance from each other
along the longitudinal axis.
13. The plasma antenna of claim 11, wherein the plurality of
dielectrics are different in material.
14. The plasma antenna of claim 2, wherein the capacitor comprises:
a first conductor having a pillar shape, the first conductor being
coaxially disposed with respect to the first RF feed; a second
conductor has a hollow pillar shape surrounding the first
conductor, the second conductor being coaxially disposed with
respect to the second RF feed.
15. The plasma antenna of claim 14, wherein the capacitor is
attachable to at least one of the first and second antennas.
16. A plasma generating apparatus comprising: an RF power source
providing an RF signal; a plasma chamber in which a gas is injected
to generate plasma; and a plasma antenna disposed on the plasma
chamber, the plasma receiving the RF signal to induce
electromagnetic fields in the plasma chamber, wherein the plasma
antenna comprises: a first antenna inducing electromagnetic fields
by using the RF signal; a second antenna inducing electromagnetic
fields by using the RF signal; and a capacitor connected between an
input terminal of the first antenna and an input terminal of the
second antenna.
17. The plasma generating apparatus of claim 16, wherein the plasma
antenna is disposed on an upper portion of the plasma chamber.
18. The plasma generating apparatus of claim 16, wherein the first
and second antennas are inductively coupled to each other.
19. The plasma generating apparatus of claim 16, wherein the first
and second antennas are connected to each other in parallel.
20. The plasma generating apparatus of claim 16, wherein the first
antenna comprises a first RF feed receiving the RF signal and
having a pillar shape and a first coil connected to the first RF
feed, and the second antenna comprises a second RF feed receiving
the RF signal and having a hollow pillar shape surrounding the
first RF feed and a second coil connected to the second RF
feed.
21. The plasma generating apparatus of claim 20, wherein the
capacitor is constituted by the first RF feed, the second RF feed,
and a dielectric disposed between the first RF feed and the second
RF feed.
22. The plasma generating apparatus of claim 21, wherein the
dielectric comprises a polymer or metal oxide.
23. The plasma generating apparatus of claim 22, wherein the
polymer comprises Teflon, ULTEM, or polyetheretherketone
(PEEK).
24. The plasma generating apparatus of claim 22, wherein the metal
oxide comprises ceramic.
25. The plasma generating apparatus of claim 24, wherein the
ceramic comprises Al.sub.2O.sub.3 or ZnO.
26. The plasma generating apparatus of claim 20, wherein the
capacitor comprises: a first conductor having a pillar shape, the
first conductor being coaxially disposed with respect to the first
RF feed; a second conductor has a hollow pillar shape surrounding
the first conductor, the second conductor being coaxially disposed
with respect to the second RF feed.
27. The plasma generating apparatus of claim 26, wherein the
capacitor is attachable to at least one of the first and second
antennas.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This U.S. non-provisional patent application claims priority
under 35 U.S.C. .sctn.119 of Korean Patent Application Nos.
10-2012-0137143 filed on Nov. 29, 2012; and 10-2012-0154646 filed
on Dec. 27, 2012, the entire contents of which are hereby
incorporated by reference.
BACKGROUND OF THE INVENTION
[0002] The present invention disclosed herein relates to a plasma
antenna and an apparatus for generating plasma having the same.
[0003] A process for manufacturing semiconductors, displays, solar
cells, and the like includes a process for treating a substrate by
using plasma. For example, in the semiconductor manufacturing
process, an etching device used for a dry etching process and an
ashing device used for an ashing process may include a chamber for
generating plasma. A substrate may be etched or ashed by using the
plasma.
[0004] Typically, a plasma generating apparatus may apply
time-varying current to an antenna installed in the chamber to
induce electrical fields and then converts a gas injected into the
chamber into a plasma state by using the induced electrical fields,
thereby generating plasma.
SUMMARY OF THE INVENTION
[0005] The present invention provides a plasma antenna for
electrically coupling two antennas constituting a dual antenna to
each other and a plasma generating apparatus including the
same.
[0006] The present invention also provides a plasma antenna for
maintaining balance of current flowing into two antennas and a
plasma generating apparatus including the same.
[0007] Embodiments of the present invention provide plasma antenna
including: a first antenna inducing electromagnetic fields by using
an RF signal; a second antenna inducing electromagnetic fields by
using the RF signal; and a capacitor connected between an input
terminal of the first antenna and an input terminal of the second
antenna.
[0008] In some embodiments, the first antenna may include a first
RF feed receiving the RF signal and having a pillar shape and a
first coil connected to the first RF feed, and the second antenna
may include a second RF feed receiving the RF signal and having a
hollow pillar shape surrounding the first RF feed and a second coil
connected to the second RF feed.
[0009] In other embodiments, the capacitor may be constituted by
the first RF feed, the second RF feed, and a dielectric disposed
between the first RF feed and the second RF feed.
[0010] In still other embodiments, the first RF feed may have a
cylindrical shape, and the second RF feed may have a hollow
cylindrical shape surrounding the cylindrical shape.
[0011] In even other embodiments, the first and second RF feeds may
be coaxially disposed with respect to each other.
[0012] In yet other embodiments, the dielectric may include a
polymer or metal oxide.
[0013] In further embodiments, the polymer may include Teflon,
ULTEM, or polyetheretherketone (PEEK).
[0014] In still further embodiments, the metal oxide may include
ceramic.
[0015] In even further embodiments, the ceramic may include
Al.sub.2O.sub.3 or ZnO.
[0016] In yet further embodiments, the plasma antenna may include a
plurality of capacitors along a longitudinal axis of each of the
first and second RF feeds.
[0017] In much further embodiments, the plurality of capacitor may
be constituted by the first RF feed, the second RF feed, and a
plurality of dielectrics disposed between the first and second RF
feeds.
[0018] In still much further embodiments, the plurality of
dielectrics may be spaced a predetermined distance from each other
along the longitudinal axis.
[0019] In even much further embodiments, the plurality of
dielectrics may be different in material.
[0020] In yet much further embodiments, the capacitor may include:
a first conductor having a pillar shape, the first conductor being
coaxially disposed with respect to the first RF feed; a second
conductor has a hollow pillar shape surrounding the first
conductor, the second conductor being coaxially disposed with
respect to the second RF feed.
[0021] In yet much still further embodiments, the capacitor may be
attachable to at least one of the first and second antennas.
[0022] In other embodiments of the present invention, plasma
generating apparatuses include: an RF power source providing an RF
signal; a plasma chamber in which a gas is injected to generate
plasma; and a plasma antenna disposed on the plasma chamber, the
plasma receiving the RF signal to induce electromagnetic fields in
the plasma chamber, wherein the plasma antenna includes: a first
antenna inducing electromagnetic fields by using the RF signal; a
second antenna inducing electromagnetic fields by using the RF
signal; and a capacitor connected between an input terminal of the
first antenna and an input terminal of the second antenna.
[0023] In some embodiments, the plasma antenna may be disposed on
an upper portion of the plasma chamber.
[0024] In other embodiments, the first and second antennas may be
inductively coupled to each other.
[0025] In still other embodiments, the first and second antennas
may be connected to each other in parallel.
[0026] In even other embodiments, the first antenna may include a
first RF feed receiving the RF signal and having a pillar shape and
a first coil connected to the first RF feed, and the second antenna
may include a second RF feed receiving the RF signal and having a
hollow pillar shape surrounding the first RF feed and a second coil
connected to the second RF feed.
[0027] In yet other embodiments, the capacitor may be constituted
by the first RF feed, the second RF feed, and a dielectric disposed
between the first RF feed and the second RF feed.
[0028] In further embodiments, the dielectric may include a polymer
or metal oxide.
[0029] In still further embodiments, the polymer may include
Teflon, ULTEM, or polyetheretherketone (PEEK).
[0030] In even further embodiments, the metal oxide may include
ceramic.
[0031] In yet further embodiments, the ceramic may include
Al.sub.2O.sub.3 or ZnO.
[0032] In much further embodiments, the capacitor may include: a
first conductor having a pillar shape, the first conductor being
coaxially disposed with respect to the first RF feed; a second
conductor has a hollow pillar shape surrounding the first
conductor, the second conductor being coaxially disposed with
respect to the second RF feed.
[0033] In still much further embodiments, the capacitor may be
attachable to at least one of the first and second antennas.
BRIEF DESCRIPTION OF THE DRAWINGS
[0034] The accompanying drawings are included to provide a further
understanding of the present invention, and are incorporated in and
constitute a part of this specification. The drawings illustrate
exemplary embodiments of the present invention and, together with
the description, serve to explain principles of the present
invention. In the drawings:
[0035] FIG. 1 is a perspective view of a plasma antenna according
to an embodiment of the present invention;
[0036] FIG. 2 is a plan view of the plasma antenna according to an
embodiment of the present invention;
[0037] FIG. 3 is a perspective view of a capacitor according to an
embodiment of the present invention;
[0038] FIG. 4 is a circuit diagram of the plasma antenna according
to an embodiment of the present invention;
[0039] FIG. 5 is a perspective view of a plasma antenna according
to another embodiment of the present invention;
[0040] FIG. 6 is a circuit diagram of the plasma antenna according
to another embodiment of the present invention;
[0041] FIG. 7 is a perspective of a plasma antenna according to
further another embodiment of the present invention;
[0042] FIG. 8 is an enlarged view illustrating an example of an
assembled portion of the plasma antenna according to further
another embodiment of the present invention;
[0043] FIG. 9 is an enlarged view illustrating an example of an
assembled portion of a plasma antenna according to further another
embodiment of the present invention;
[0044] FIGS. 10 to 12 are side views for explaining a process of
assembling the plasma antenna of FIG. 9.
[0045] FIG. 13 is a view of a plasma generating apparatus according
to an embodiment of the present invention;
[0046] FIG. 14 is a circuit diagram of the plasma generating
apparatus according to an embodiment of the present invention;
and
[0047] FIG. 15 is a cross-sectional view of a substrate treating
apparatus including the plasma generating apparatus according to an
embodiment of the present invention.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0048] Advantages and features of the present invention, and
implementation methods thereof will be clarified through following
embodiments described with reference to the accompanying drawings.
The present invention may, however, be embodied in different forms
and should not be construed as limited to the embodiments set forth
herein. Rather, these embodiments are provided so that this
disclosure will be thorough and complete, and will fully convey the
scope of the present invention to those skilled in the art.
Further, the present invention is only defined by scopes of
claims.
[0049] If not defined otherwise, all of the terms used (including
technical or scientific terms) are equivalent to the counterparts
as understood generally by one in the killed in the art. Usual
terms as defined in the dictionary are to be interpreted
correspondingly to the context of the related technology rather
than ideally or excessively formally unless the present invention
clearly defines the same.
[0050] In the following description, the technical terms are used
only for explaining a specific exemplary embodiment while not
limiting the present invention. The terms of a singular form may
include plural forms unless specifically mentioned. The meaning of
`comprises` and/or `comprising` specifies a composite, component,
element, process, operation and/or device but does not exclude
other composites, components, elements, processes, operations
and/or devices. In the specification, `and/or` means that it
includes at least one of listed components.
[0051] Hereinafter, exemplary embodiments will be described in
detail with reference to the accompanying drawings.
[0052] FIG. 1 is a perspective view of a plasma antenna according
to an embodiment of the present invention, and FIG. 2 is a plan
view of the plasma antenna according to an embodiment of the
present invention.
[0053] Referring to FIGS. 1 and 2, a plasma antenna 100 according
to an embodiment of the present invention may include a first
antenna 110, a second antenna 120, and a capacitor 130.
[0054] The first antenna 110 may induce electromagnetic fields by
using an RF signal. The second antenna 120 may also induce
electromagnetic fields by using the RF signal. The capacitor 130
may be connected between an input terminal of the first antenna 110
and an input terminal of the second antenna 120.
[0055] The first antenna 110 may include a first RF feed 1101 and a
first coil 1102 connected to the first RF feed 1101. The second
antenna 120 may include a second RF feed 1201 to which the RF
signal is applied and a second coil 1202 connected to the second RF
feed 1201.
[0056] According to an embodiment of the present invention, the
first RF feed 1101 may be a conductor having a pillar shape. The
second RF feed 1201 may be a conductor having a hollow pillar shape
surrounding the first RF feed 1101.
[0057] As shown in FIGS. 1 and 2, the first RF feed 1101 may have a
cylinder shape, and the second RF feed 1201 may have a hollow
cylinder shape surrounding the cylinder, but the present invention
is not limited thereto. For example, the first RF feed 1101 may
have a prism shape, and the second RF feed 1201 may have a hollow
prism shape surrounding the prism shape.
[0058] As shown in FIGS. 1 and 2, the first RF feed 1101 may have
the same bottom shape as the second RF feed 1201, but the present
invention is not limited thereto. For example, the RF feeds 1101
and 1201 may have bottom shapes different from each other.
[0059] As shown in FIGS. 1 and 2, the first and second RF feeds
1101 and 1201 may be coaxially disposed with respect to each other.
According to embodiments, central axes of the two RF feeds 1101 and
1201 may be misaligned with respect to each other. For example, the
central axes of the first and second RF feeds 1101 and 1201 may be
spaced a preset distance from each other and disposed parallel to
each other.
[0060] According to an embodiment of the present invention, the
capacitor 130 may be constituted by the first RF feed 1101, the
second RF feed 1201, and a dielectric 1301 disposed between the
first and second RF feeds 1101 and 1201. For example, as shown in
FIGS. 1 and 2, the capacitor 130 may be manufactured by filling the
dielectric 1301 between the first and second RF feeds 1101 and
1201.
[0061] As a result, the plasma antenna 100 according to the
embodiment of the present invention may be configured to connect
the capacitor 130 between the input terminal of the first antenna
110 and the input terminal of the second antenna 120.
[0062] According to an embodiment, the dielectric 1301 may have a
dielectric constant greater than that of air. For example, the
dielectric 1301 may be formed of polymer or metal oxide. According
to embodiments, the dielectric 1301 may be formed of a material
having dielectric constant greater than air in addition to the
polymer or metal oxide.
[0063] According to an embodiment, the polymer may be Teflon,
ULTEM, or polyetheretherketone (PEEK), but the present invention is
not limited thereto. For example, the polymer may include other
polymer materials in addition to Teflon, ULTEM, and PEEK.
[0064] According to an embodiment, the metal oxide may be ceramic,
but the present invention is not limited thereto. For example, the
metal oxide may include various metal oxides in addition to the
ceramic.
[0065] According to an embodiment, the ceramic may be formed of
Al.sub.2O.sub.3 or ZnO, but the present invention is not limited
thereto. For example, the ceramic may be formed of various metal
oxides in addition to Al.sub.2O.sub.3 and ZnO.
[0066] FIG. 3 is a perspective view of the capacitor 130 according
to an embodiment of the present invention.
[0067] Referring to FIG. 3, the capacitor 130 may include a first
RF feed 1101, a second RF feed 1201 surrounding the first RF feed
1101, and a dielectric material 1301 disposed between the first RF
feed 1101 and the second RF feed 1201.
[0068] The first RF feed 1101 has a cylindrical shape of which a
bottom surface has a radius R.sub.1, and a height is 1. The second
RF feed 1201 has a hollow cylindrical shape of which a bottom
surface has a radius R.sub.2, and a height is 1. When the
dielectric material 1301 may have a dielectric constant c, air has
a dielectric constant .di-elect cons..sub.0, a capacitance of the
capacitor 130 may be as follows.
C = 2 .pi. 0 l ln R 2 R 1 [ Mathematical equation 1 ]
##EQU00001##
[0069] FIG. 4 is a circuit diagram of the plasma antenna 100
according to an embodiment of the present invention.
[0070] Referring to FIG. 4, the first antenna 110 of the plasma
antenna 100 may be provided as an inductor having an inductance L1,
and the second antenna 120 may be provided as an inductor having an
inductance L2. The capacitor 130 may be disposed between input
terminals of the two inductors and be provided as a capacitor
having a capacitance C.
[0071] FIG. 5 is a perspective view of a plasma antenna according
to another embodiment of the present invention.
[0072] Referring to FIG. 5, a plasma antenna 200 according to an
embodiment may include a first antenna 110 and a second antenna
120. However, the plasma antenna 200 may be different from the
plasma antenna FIG. 1 in that the plasma antenna 200 includes a
plurality of capacitors 131 and 132 along longitudinal axes of
first and second RF feeds 1101 and 1201. Here, the longitudinal
axis represents a central axis of the first or second RF feed 1101
or 1201.
[0073] According to an embodiment, the plurality of capacitors 131
and 132 may be constituted by the first RF feed 1101, the second RF
feed 1201, and a plurality of dielectrics 1311 and 1321 disposed
between the first and second RF feeds 1101 and 1201.
[0074] As shown in FIG. 5, the plurality of dielectrics 1311 and
1321 may be spaced a preset distance from each other along the
longitudinal axis, but the present invention is not limited
thereof. For example, the plurality of dielectrics 1311 and 1321
may be disposed adjacent to each other.
[0075] According to an embodiment, the plurality of dielectrics
1311 and 1321 may be materials different from each other. For
example, the first dielectric 1311 may be Teflon, and the second
dielectric 1321 may be ceramic.
[0076] Although the plasma antenna 200 of FIG. 5 includes the two
capacitors 131 and 132, the present invention is not limited to the
number of capacitors. For example, the plasma antenna 200 may
include at least three capacitors.
[0077] FIG. 6 is a circuit diagram of the plasma antenna 200
according to another embodiment of the present invention.
[0078] Referring to FIG. 6, the plasma antenna 200 may include a
first antenna 110 provided as an inductor having an inductance L1
and a second antenna 120 provided as an inductor having an
inductance L2. Also, a plurality of capacitors 131 and 132
connected to each other in parallel may be disposed between input
terminals of the two inductors.
[0079] The capacitors 131 and 132 may have capacitances C and C2,
respectively. Also, if the capacitors 131 and 132 have the same
structure, size, and dielectric as each other, the capacitances C1
and C2 may be the same.
[0080] FIG. 7 is a perspective of a plasma antenna according to
further another embodiment of the present invention.
[0081] Referring to FIG. 7, a plasma antenna 300 according to
another embodiment of the present invention may include a first
antenna 110 and a second antenna 120. However, the plasma antenna
300 may be different from the plasma antenna FIG. 1 in that a
capacitor 140 is detachably fixed to the antenna 300.
[0082] As shown in FIG. 7, the capacitor 140 may include a first
conductor 1401 having a pillar shape and coaxially disposed with
respect to a first RF feed 1101, a second conductor 1402 having a
hollow pillar shape surrounding the first conductor 1401 and
coaxially disposed with respect to a second RF feed 1201, and a
dielectric 1403 disposed between the first conductor 1401 and the
second conductor 1402.
[0083] The first conductor 1401 may have the same shape and size as
a bottom surface of the first RF feed 1101, and the second
conductor 1402 may have the same shape and size as a bottom surface
of the second RF feed 1201.
[0084] The capacitor 140 may be separately manufactured with
respect to the first and second antennas 110 and 120 and then be
assembled with at least one of the first and second antennas 110
and 120.
[0085] FIG. 8 is an enlarged view illustrating an example of an
assembled portion of the plasma antenna 300 according to further
another embodiment of the present invention. Referring to FIG. 8,
the capacitor 140 may be detachably disposed on the first antenna
110.
[0086] For example, the capacitor 140 may include a protrusion 1404
protruding from an end of the first conductor 1401. The first RF
feed 1101 may include a recess part for accommodating the
protrusion in an end thereof. The protrusion 1404 and the recess
part 1103 may be complementarily formed with respect to each
other.
[0087] According to an embodiment, when the protrusion 1404 is
inserted into the recess part 1103, the protrusion 1404 and the
recess part 1403 may be coupled to each other in an interference
fit manner to improve coupling force between the capacitor 140 and
the first antenna 110.
[0088] Although not shown, the first conductor 1401 may include a
recess part that is the same as the recess part 1103 of the first
RF feed 1101 in the other end thereof. The recess part provided in
the other end of the first conductor 1401 may accommodate a
protrusion 1404 of the other capacitor. Thus, the plasma antenna
300 may include at least two capacitors connected to each
other.
[0089] FIG. 9 is an enlarged view illustrating an example of an
assembled portion of the plasma antenna 300 according to further
another embodiment of the present invention. Referring to FIG. 9,
the capacitor 140 may be detachably disposed on the second antenna
120.
[0090] For example, the capacitor 140 may include a fixing unit
connected to the second conductor 1402. The fixing unit 1405 may be
disposed outside the second conductor 1402 by a connection unit
1406 such as a hinge, but the connection unit is not limited to the
hinge. For example, the connection unit may include various units
according to embodiments. The fixing unit 1405 may include a groove
1407.
[0091] The second RF feed 1201 may include a projection 1203 on an
outer surface thereof. The projection 1203 and the groove 1407 may
be complementarily formed with respect to the each other.
[0092] FIGS. 10 to 12 are side views for explaining a process of
assembling the plasma antenna 300 of FIG. 9.
[0093] Referring to FIG. 10, the capacitor 140 may be coaxially
disposed with respect to the first and second RF feeds 1101 and
1201. When the capacitor 140 is coaxially disposed with respect to
the first and second RF feeds 1101 and 1201, the first conductor
1401 of the capacitor 140 may contact the first RF feed 1101 of the
first antenna 110, and also, the second conductor 1402 of the
capacitor 140 may contact the second RF feed 1201 of the second
antenna 120.
[0094] Then, as shown in FIG. 11, the fixing unit 1405 of the
capacitor 140 may move toward the projection 1203 of the second
antenna 120. As shown in FIG. 11, when the fixing unit 1405 is
connected to the second conductor 1402 by the connection unit 1406,
the fixing unit 1405 may rotate around a connection portion
therebetween.
[0095] Then, as shown in FIG. 12, the projection 1203 may be
inserted into the groove 1407 defined in the fixing unit 1405 to
fix the capacitor 140 to the antenna. According to an embodiment,
the projection 1203 and the groove 1407 may be fixed to each other
in the interference fit manner to improve coupling force between
the capacitor 140 and the second antenna 120.
[0096] Although the plasma antenna 300 of FIGS. 10 to 12 includes
two sets of fixing unit 1405 and projection 1203, the present
invention is not limited to the number of fixing unit and
projection. For example, the plasma antenna 300 may include at
least three fixing units and projections.
[0097] Although not shown, the second conductor 1402 may also
further include a projection having the same shape as the
projection 1203 of the second RF feed. 1201. The projection
provided on the second conductor 1402 may be engaged with a fixing
unit 1405 of the other capacitor. Thus, the plasma antenna 30 may
include at least two capacitors connected to each other.
[0098] According to an embodiment, the plasma antenna 300 may
include the assembled structure of FIG. 8 and the assembled
structure of FIGS. 9 to 12. That is, the capacitor 140 may be
detachably coupled to all of the first and second antennas 110 and
120.
[0099] FIG. 13 is a view of a plasma generating apparatus according
to an embodiment of the present invention.
[0100] As shown in FIG. 13, the plasma generating apparatus 400 may
include an RF power source 21, a plasma chamber 23, and a plasma
antenna. The plasma generating apparatus 400 may include the
above-described plasma antenna 100, 200, or 300 to generate plasma
in the plasma chamber 23.
[0101] The RF power source 21 may provide an RF signal. A gas may
be injected into the plasma chamber 23 to generate plasma. The
plasma antenna 100 may be disposed on the plasma chamber 23 to
receive the RF signal, thereby inducing electromagnetic fields in
the plasma chamber 23.
[0102] According to an embodiment, the RF power source 21 may
generate the RF signal to transmit the RF signal to the plasma
antenna 100. The RF power source 21 may transmit high-frequency
power to the plasma chamber 23 through the RF signal. According to
an embodiment of the present invention, the RF power source 21 may
generate an RF signal having a sinusoidal wave to output the RF
signal. However, the present invention is not limited thereto. For
example, the RF power source 301 may generate various waves such as
a square wave, a triangle wave, a triangle wave, a pulse wave, and
the like.
[0103] According to an embodiment, the plasma chamber 23 may
receive a gas generate plasma by using the injection gas. The
plasma chamber 23 may change the gas injected into the chamber into
a plasma state by using high-frequency power transmitted through
the RF signal.
[0104] According to an embodiment, as shown in FIG. 13, the plasma
antenna 100 disposed on an upper portion of the plasma chamber 23,
but the present invention is not limited to the installed position
of the plasma antenna 100. For example, the plasma antenna 100 may
be disposed on a side surface of the plasma chamber 23.
[0105] The plasma antenna 100 may be a dual antenna including a
plurality of antennas. For example, the plasma antenna 100 may
include a first antenna 110 inducing electromagnetic fields by
using the RF signal, a second antenna 120 inducting electromagnetic
fields by using the RF signal, and a capacitor 130 connected
between an input terminal of the first antenna 110 and an input
terminal of the second antenna 120.
[0106] The first and second antenna 110 and 120 may be inductively
coupled to each other. That is, the magnetic fields induced by the
first antenna 110 and the magnetic fields induced by the second
antenna 120 may affect each other. As a result, the first antenna
110 and the second antenna 120 may have a mutual inductance M.
[0107] According to an embodiment, the first antenna 110 and the
second antenna 120 may be connected to the RF power source 21 in
parallel.
[0108] The first antenna 110 may include a first RF feed 1101
receiving the RF signal from the RF power source 21 and having a
pillar shape and a first coil 1102 connected to the first RF feed
1101. The second antenna 120 may include a second RF feed 1201
receiving the RF signal from the RF power source 21 and having a
hollow pillar shape surrounding the first RF feed 1101 and a second
coil 1202 connected to the second RF feed 1201.
[0109] The plasma antenna 100 may include a capacitor 130 disposed
between the input terminal of the first antenna 110 and the input
terminal of the second antenna 120. The capacitor 130 may be
constituted by the first RF feed 1101, the second RF feed 1201, and
a dielectric 1301 disposed between the first RF feed 1101 and the
second RF feed 1201. The dielectric 1301 may be one of Teflon,
ULTEM, polyetheretherketone (PEEK), and ceramic.
[0110] According to an embodiment, the capacitor 130 may be
integrated with the first and second antennas 110 and 120.
According to another embodiment, the capacitor may be separately
provided with respect to the first and second antennas.
[0111] For example, the capacitor 140 may include a first conductor
1401 coaxially disposed with respect to the first RF feed 1101, a
second conductor 1402 having a hollow pillar shape surrounding the
first conductor 1401 and coaxially disposed with respect to the
second RF feed 1201, and a dielectric 1403 disposed between the
first conductor 1401 and the second conductor 1402.
[0112] The capacitor 140 may be detachably coupled to at least one
of the first and second antennas 110 and 120.
[0113] According to an embodiment of the present invention, the
plasma generating apparatus 400 may further include an impedance
matcher 22. As shown in FIG. 13, the impedance matcher 22 may be
connected between the RF power source 21 and the plasma antenna
100. The impedance matcher 22 may match an output impedance viewed
from an output terminal of the RF power source 21 with an input
impedance viewed from an input terminal of the plasma antenna 100
to minimize loss of the high-frequency power outputted from the RF
power source 21, thereby transmitting maximum power to the
chamber.
[0114] FIG. 14 is a circuit diagram of a plasma generating
apparatus 400 according to an embodiment of the present
invention.
[0115] Referring to FIG. 14, when a first antenna 110 and a second
antenna 120 are inductively coupled to each other to allow
electromagnetic fields generated in one antenna to affect
electromagnetic fields generated in the other antenna, the two
antennas may have a mutual inductance M.
[0116] As shown in FIG. 14, when the plasma generating apparatus
400 includes the impedance matcher 22, the impedance matcher 22 may
include two output ports. Here, one may be connected to an input
terminal of the first antenna 110, and the other one may be
connected to an input terminal of the second antenna 120. Also, a
capacitor 130 may be connected between the input terminal of the
first antenna 110 and the input terminal of the second antenna
120.
[0117] According to an embodiment of the present invention, since
the capacitor 130 is disposed between the input terminals of the
first and second antennas 110 and 120, electrical coupling between
the two antennas 110 and 120 constituting a dual antenna may be
improved.
[0118] When the first and second antennas 110 and 120 are
inductively coupled to each other to affect intensity and
distribution of the electromagnetic fields therebetween, the
capacitor 130 may allow the mutual inductance between the two
antennas to have about 1, thereby uniformly distributing the
electromagnetic fields over the plasma chamber 23.
[0119] According to an embodiment of the present invention, since
the capacitor 130 is disposed between the input terminals of the
first and second antennas 110 and 120, the impedance of the plasma
antenna 100 may be changed. Thus, current flowing into the two
antennas 110 and 120 may be uniform.
[0120] For example, as shown in FIG. 1, in a case where the two
antennas have impedances different from each other because the
first and second antennas 110 and 120 have coil diameters different
from each other, the capacitor 130 may change the impedance of the
antenna so that current having the same intensity flows into the
two antennas.
[0121] FIG. 15 is a cross-sectional view of a substrate treating
apparatus including the plasma generating apparatus according to an
embodiment of the present invention.
[0122] Referring to FIG. 15, a substrate treating apparatus 10 may
include a plasma chamber 23, a substrate support unit 500, a gas
supply unit 600, and a plasma source unit 700. The plasma chamber
23 may provide a space in which a plasma treating process is
performed. The substrate support unit 500 may support a substrate W
within the plasma chamber 23. The gas supply unit 300 may supply a
process gas into the plasma chamber 23. The plasma source unit 400
may provide an electromagnetic wave into the plasma chamber 23 to
generate plasma from the process gas.
[0123] The plasma chamber 23 may include a chamber body 231 and a
dielectric cover 232. The chamber body 231 may have an opened top
surface and an inner space. An exhaust hole 233 may be formed in a
bottom wall of the chamber body 231. The exhaust hole 233 may be
connected to an exhaust line 234 to provide a passage through which
a gas staying in the chamber body 231 and byproducts generated
during the process are discharged to the outside. The exhaust hole
233 may be provided in plurality of in an edge area of the bottom
wall of the chamber body 231.
[0124] The dielectric cover 232 may seal the opened top surface of
the chamber body 231. The dielectric cover 232 may have a radius
corresponding to a circumference of the chamber body 231. The
dielectric cover 232 may be formed of a dielectric material. The
dielectric cover 232 may be formed of an aluminum material. A space
surrounded by the dielectric cover 232 and the chamber body 231 may
be provided as a treating space 240 in which a plasma treating
process is performed.
[0125] The substrate support unit 500 may be disposed in the
treating space 240 to support the substrate W. The substrate
support unit 500 may fix the substrate W by using electrostatic
force or support the substrate W in a mechanical clamping manner.
Hereinafter, the method in which the substrate support unit 500
fixes the substrate W by using the electrostatic force may be
described as an example.
[0126] The substrate support unit 500 may include an electrostatic
chuck 510, a heater 530, a focus ring 540, an insulation plate 550,
a ground plate 560, a housing 570, and a lift pin unit 580.
[0127] The electrostatic chuck 510 may have a disk shape. A top
surface of the electrostatic chuck 510 may have a radius
corresponding to that of the substrate W or less than that of the
substrate W. Protrusions 511 may be disposed on the top surface of
the electrostatic chuck 510. The substrate W may be supported by
the protrusions 511 and be spaced a predetermined distance from the
top surface of the electrostatic chuck 510. The electrostatic chuck
510 may be a stepped side surface so that a lower portion thereof
has a radius greater than that of an upper portion.
[0128] The electrostatic chuck 510 may include an electrode. The
electrode may be provided as a thin circular plate formed of a
conductive material and connected to an external power source
through a cable. Power applied from the external power source may
form electrostatic force between the electrode and the substrate W
to fix the substrate W to the top surface of the electrostatic
chuck 510.
[0129] The heater 530 may be provided in the electrostatic chuck
510. The heater 530 may be disposed under the electrode. The heater
530 may be connected to the external power source through a cable
531. The heater 530 may resist against current applied from the
external power source to generate heat. The generated heat may be
transmitted into the substrate W via the electrostatic chuck 510 to
heat the substrate W at a predetermined temperature. The heater 530
may be provided as a coil having a spiral shape. The heater 530 may
be burred into the electrostatic chuck 510 at a constant
distance.
[0130] The focus ring 540 may be provided in a ring shape and
disposed along a circumference of an upper area of the
electrostatic chuck 510. A top surface of the focus ring 540 may be
stepped so that an inner portion thereof adjacent to the
electrostatic chuck 510 is lower than an outer portion thereof. The
inner portion of the top surface of the focus ring 540 may be
disposed at the same height as the top surface of the electrostatic
chuck 510. The focus ring 540 may expand a region in which the
electromagnetic fields are formed so that the substrate W is
located in a center of a region in which the plasma is formed.
Thus, the plasma may be uniformly formed over an entire area of the
substrate W.
[0131] The insulation plate 550 may be disposed under the
electrostatic chuck 510 to support the electrostatic chuck 510. The
insulation plate 550 may have a circular plate having a
predetermined thickness and have a radius corresponding that the
electrostatic chuck 510. The insulation plate 550 may be formed of
an insulation material. The insulation plate 550 may be connected
to an RF power source (not shown) through the cable 551. The RF
current applied into the insulation plate 550 through the cable 551
may generate electromagnetic fields between the substrate support
unit 500 and the dielectric cover 232. The electromagnetic fields
may be provided as energy for generating plasma.
[0132] A cooling passage may be formed in the insulation plate 550.
The cooling passage 512 may be disposed under the heater 520. The
cooling passage 512 may provide a passage through which a cooling
fluid is circulated. The heat of the cooling fluid may be
transmitted into the electrostatic chuck 510 and the substrate W,
and then the heated electrostatic chuck 510 and the substrate W may
be quickly cooled. The cooling passage 512 may have a spiral shape.
On the other hand, the cooling passage 512 may be provided as
ring-shaped passages having radii different from each other and
disposed with the same center. Each of the passages may communicate
with each other. On the other hand, the cooling passage 512 may be
disposed on the ground plate 560.
[0133] The ground plate 560 may be disposed under the insulation
plate 550. The ground plate 560 may have a disk shape having a
predetermined thickness and a radius corresponding to the
insulation plate 550. The ground plate 560 may be grounded. The
ground plate 560 may electrically insulate the insulation plate 550
from the chamber body 231.
[0134] A pin hole 501 and a purge gas supply hole 502 may be formed
in the electrostatic chuck 510, the insulation plate 550, and the
ground plate 560. The pin hole 501 may be provided from the top
surface of the electrostatic chuck 510 to a bottom surface of the
ground plate 560. The pin hole 510 may be provided in plurality.
Also, lift pins 581 may be disposed in the pin holes 510,
respectively.
[0135] The purge gas supply hole 502 may be provided in plurality.
Also, the purge gas supply hole 502 may be provided from the top
surface of the electrostatic chuck 510 to the bottom surface of the
ground plate 560. The purge gas supply hole 502 may be connected to
a purge gas supply line 503 to provide a passage through which a
purge gas is supplied. The purge gas may be supplied into a space
between the substrate W and the top surface of the electrostatic
chuck 510. The purge gas staying between the substrate W and the
electrostatic chuck 510 may improve heat transfer efficiency from
the electrostatic chuck 510 to the substrate W. The purge gas may
include an inert gas. The purge gas may be a helium gas.
[0136] The housing 570 may be disposed under the ground plate 560
to support the ground plate 560. The housing 570 may have a
cylindrical shape having a predetermined height and an inner space.
The housing 570 may have a radius corresponding to the ground plate
560. Various cables 503, 531, and 551 and the lift pin unit 580 may
be disposed within the housing 570.
[0137] The lift pin unit 580 may load the substrate W onto the
electrostatic chuck 510 or unload the substrate from the
electrostatic chuck 510. The lift pin unit 580 may include a lift
pin 581, a support plate 582, and a driving part 583. The lift pin
581 may be provided in plurality. Also, the lift pins 581 may be
disposed in the pin holes 501, respectively. The lift pins 581 may
vertically move along the pin holes 501 to load and unload the
substrate W.
[0138] The support plate 582 may be disposed within the housing 570
to support the lift pins 581. The driving part 583 may elevate the
support plate 582. The support plate 582 may vertically move by the
driving part 583, and thus, the lift pins 581 may move along the
pin holes 501.
[0139] A bellows 584 may be provided between the ground plate 560
and the support plate 582. The bellows 584 may surround a region of
the lift pin 581 disposed within the housing 570. The bellows 584
may contract or expand according to the elevation of the support
plate 582.
[0140] A baffle 590 may control a flow of the process gas within
the chamber 23. The baffle 590 may have a ring shape and be
disposed between the chamber 231 and the substrate support unit
500. Distribution holes 591 are formed in the baffle 590. The
process gas staying within the chamber 23 may be introduced into
the exhaust hole 233 by passing through the distribution holes 591.
The flow of the process gas introduced into the exhaust hole 233
may be controlled according to a shape and arrangement of the
distribution holes 591.
[0141] The gas supply unit 600 may supply the process gas into the
chamber 23. The gas supply unit 600 may include a nozzle 610, a gas
storage part 620, and a gas supply line 630.
[0142] The nozzle 610 may be mounted on the dielectric cover 232.
The nozzle 610 may be disposed at a central area of the dielectric
cover 232. The nozzle 610 may be connected to the gas storage part
620 through the gas supply line 630. A valve 640 may be disposed on
the gas supply line 630. The valve 640 may open or close the gas
supply line 630 to adjust a supply rate of process gas. The process
gas stored in the gas storage unit 620 may be supplied into the
nozzle 610 through the gas supply line 630 and then sprayed into
the chamber 23 from the nozzle 610. The nozzle 610 may mainly
supply the process gas into a central region of the treating space
240. On the other hand, the gas supply unit 600 may further include
a nozzle (not shown) mounted on a sidewall of the chamber body 231.
The nozzle may supply the process gas into an edge region of the
treating space 240.
[0143] The plasma source unit 700 may generate plasma from the
process gas. The plasma source unit 700 may include an antenna 100
and a power source 21.
[0144] The antenna 100 may be disposed on an upper portion of the
chamber 23. The antenna 100 may be provided as a coil having a
spiral shape. The power source 21 may be connected to the antenna
100 through a cable to apply high-frequency power to the antenna
100. As the high-frequency power is applied, the antenna 100 may
generate an electromagnetic wave. The electromagnetic wave may be
radially generated with respect to the antenna 100. The
electromagnetic wave may be provided into the chamber 23. The
electromagnetic wave provided into the chamber 23 may generate
induced electrical fields within the chamber 23. The process gas
may obtain energy required for ionization thereof from the induced
electrical fields and then be converted into plasma. The plasma may
be provided onto the substrate W and then used for an ashing or
etching process.
[0145] According to the embodiments, the coupling between the two
antennas constituting the dual antenna may be improved.
[0146] According to the embodiments, when the two antennas are
inductively coupled to each other, the mutual inductance between
the two antennas may be constantly maintained.
[0147] According to the embodiments, the balance of current flowing
into the two antennas may be achieved.
[0148] According to the embodiments, even though the two antennas
inductances different from each other, current having the same
intensity may flow into the two antennas.
[0149] The above-disclosed subject matter is to be considered
illustrative, and not restrictive, and the appended claims are
intended to cover all such modifications, enhancements, and other
embodiments, which fall within the true spirit and scope of the
present invention. Thus, to the maximum extent allowed by law, the
scope of the present invention is to be determined by the broadest
permissible interpretation of the following claims and their
equivalents, and shall not be restricted or limited by the
foregoing detailed description.
* * * * *