U.S. patent application number 13/836546 was filed with the patent office on 2014-04-17 for microcrystalline silicon thin film solar cell and the manufacturing method thereof.
This patent application is currently assigned to INSTITUTE OF NUCLEAR ENERGY RESEARCH ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN. The applicant listed for this patent is INSTITUTE OF NUCLEAR ENERGY RESEARCH ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN. Invention is credited to CHIH-PONG HUANG, DER-JUN JAN, TIAN- YOU LIAO, MIN-CHUAN WANG.
Application Number | 20140102530 13/836546 |
Document ID | / |
Family ID | 50474274 |
Filed Date | 2014-04-17 |
United States Patent
Application |
20140102530 |
Kind Code |
A1 |
WANG; MIN-CHUAN ; et
al. |
April 17, 2014 |
MICROCRYSTALLINE SILICON THIN FILM SOLAR CELL AND THE MANUFACTURING
METHOD THEREOF
Abstract
The present invention relates to a microcrystalline silicon thin
film solar cell and the manufacturing method thereof, using which
not only the crystallinity of a microcrystalline silicon thin film
that is to be formed by the manufacturing method can be controlled
and adjusted at will and the defects in the microcrystalline
silicon thin film can be fixed, but also the device characteristic
degradation due to chamber contamination happening in the
manufacturing process, such as plasma enhanced chemical vapor
deposition (PECVD), can be eliminated effectively.
Inventors: |
WANG; MIN-CHUAN; (TAOYUAN
COUNTY, TW) ; LIAO; TIAN- YOU; (TAOYUAN COUNTY,
TW) ; HUANG; CHIH-PONG; (TAOYUAN COUNTY, TW) ;
JAN; DER-JUN; (TAOYUAN COUNTY, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN; INSTITUTE OF NUCLEAR ENERGY
RESEARCH |
|
|
US |
|
|
Assignee: |
INSTITUTE OF NUCLEAR ENERGY
RESEARCH ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN
TAOYUAN COUNTY
TW
|
Family ID: |
50474274 |
Appl. No.: |
13/836546 |
Filed: |
March 15, 2013 |
Current U.S.
Class: |
136/256 ;
438/98 |
Current CPC
Class: |
H01L 31/1884 20130101;
Y02E 10/547 20130101; H01L 31/1804 20130101; H01L 31/1824 20130101;
Y02E 10/545 20130101; Y02P 70/50 20151101; H01L 31/03921 20130101;
H01L 31/077 20130101; H01L 31/1816 20130101 |
Class at
Publication: |
136/256 ;
438/98 |
International
Class: |
H01L 31/077 20060101
H01L031/077; H01L 31/18 20060101 H01L031/18 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 12, 2012 |
TW |
101137752 |
Claims
1. A method for manufacturing a microcrystalline silicon thin film
solar cell, comprising the steps of: using a means of physical
vapor deposition (PVD) to form a layer of transparent conducting
oxide (TCO) and thus define a pattern on a substrate; using a means
of plasma-enhanced chemical vapor deposition (PECVD) to form a
layer of hole-based silicon semiconductor, such as a p-type Si, on
the layer of TCO in a first process chamber while enabling the
layer of hole-based silicon semiconductor to be used as a
hole-based ohmic contact layer; using a means of plasma-enhanced
chemical vapor deposition (PECVD) to form a first layer of
intrinsic microcrystalline silicon semiconductor, such as a
.mu.-Si, on the layer of hole-based silicon semiconductor in the
first process chamber while enabling the first layer of intrinsic
microcrystalline silicon semiconductor to be used as a light
absorption layer; using a means of plasma-enhanced chemical vapor
deposition (PECVD) under a condition of high processing pressure
and high plasma power to form a second layer of intrinsic
microcrystalline silicon semiconductor, such as a .mu.-Si, on the
first layer of intrinsic microcrystalline silicon semiconductor in
a second process chamber while enabling the second layer of
intrinsic microcrystalline silicon semiconductor to be used also as
a light absorption layer; using a means of plasma-enhanced chemical
vapor deposition (PECVD) to form a third layer of intrinsic
microcrystalline silicon semiconductor, such as a .mu.-Si, on the
second layer of intrinsic microcrystalline silicon semiconductor in
a third process chamber while enabling the second layer of
intrinsic microcrystalline silicon semiconductor to be used also as
a light absorption layer; using a means of plasma-enhanced chemical
vapor deposition (PECVD) to form a layer of electron-based silicon
semiconductor, such as a n-type Si, in a pattern on the third layer
of intrinsic microcrystalline silicon semiconductor in the third
process chamber while enabling the layer of electron-based silicon
semiconductor to be used also as an electron-based ohmic contact
layer; and using a means of physical vapor deposition (PVD) to form
a conductive metal layer in a pattern on the layer of
electron-based silicon semiconductor while enabling the conductive
metal layer to be used as a back electrode, and thereby, achieving
a P-I-N structure.
2. The manufacturing method of claim 1, wherein the means of PECVD
in the first process chamber is performed using a first plasma
source; the first plasma source is capable of providing at least
one type of plasma; and the first plasma source is a very high
frequency (VHF) plasma source, featured by a frequency selected
from the group consisting of: 13.56 MHz, 27.12 MHz, 40 MHz and
those higher than 40 MHz.
3. The manufacturing method of claim 1, wherein the means of PECVD
in the second process chamber is performed using a second plasma
source; the second plasma source is capable of providing at least
one type of plasma; and the first plasma source is a very high
frequency (VHF) plasma source, featured by a frequency selected
from the group consisting of: 13.56 MHz, 27.12 MHz, 40 MHz and
those higher than 40 MHz.
4. The manufacturing method of claim 1, wherein the means of PECVD
in the third process chamber is performed using a third plasma
source; the third plasma source is capable of providing at least
one type of plasma; and the first plasma source is a very high
frequency (VHF) plasma source, featured by a frequency selected
from the group consisting of: 13.56 MHz, 27.12 MHz, 40 MHz and
those higher than 40 MHz.
5. The manufacturing method of claim 1, wherein during the forming
of the second layer of intrinsic microcrystalline silicon
semiconductor on the first layer of intrinsic microcrystalline
silicon semiconductor in the second process chamber using the
second plasma source, any defect in the first layer of intrinsic
microcrystalline silicon semiconductor is remedied and
repaired.
6. The manufacturing method of claim 1, wherein the substrate is a
substrate selected from the group consisting of: a glass and a
flexible thermal-resistant substrate.
7. The manufacturing method of claim 1, wherein the first process
chamber is connected to the second process chamber, and the second
process chamber is connected to the third process chamber, while
the third process chamber is connected to a vacuumed load-lock
chamber.
8. A microcrystalline silicon thin film solar cell, comprising: a
substrate, being used as the bottom layer of the microcrystalline
silicon thin film solar cell; a layer of transparent conducting
oxide (TCO), disposed on the substrate; a layer of hole-based
silicon semiconductor, such as a p-type Si, disposed on the layer
of TCO; a first layer of intrinsic microcrystalline silicon
semiconductor, such as a .mu.-Si, disposed on the layer of
hole-based silicon semiconductor; a second layer of intrinsic
microcrystalline silicon semiconductor, such as a .mu.-Si, disposed
on the first layer of intrinsic microcrystalline silicon
semiconductor; a third layer of intrinsic microcrystalline silicon
semiconductor, such as a .mu.-Si, disposed on the second layer of
intrinsic microcrystalline silicon semiconductor; a layer of
electron-based silicon semiconductor, such as a n-type Si, disposed
on the third layer of intrinsic microcrystalline silicon
semiconductor; and a conductive metal layer, disposed on the layer
of electron-based silicon semiconductor.
9. The microcrystalline silicon thin film solar cell of claim 8,
wherein the layer of TCO is formed in a pattern on the substrate by
a means of physical vapor deposition (PVD).
10. The microcrystalline silicon thin film solar cell of claim 8,
wherein the layer of hole-based silicon semiconductor is formed on
the layer of TCO in a first process chamber by a means of
plasma-enhanced chemical vapor deposition (PECVD), and the layer of
hole-based silicon semiconductor is used as a hole-based ohmic
contact layer.
11. The microcrystalline silicon thin film solar cell of claim 8,
wherein the first layer of intrinsic microcrystalline silicon
semiconductor is formed on the layer of hole-based silicon
semiconductor in a first process chamber by a means of
plasma-enhanced chemical vapor deposition (PECVD), and the first
layer of intrinsic microcrystalline silicon semiconductor is used
as a light absorption layer.
12. The microcrystalline silicon thin film solar cell of claim 8,
wherein the second layer of intrinsic microcrystalline silicon
semiconductor is formed on the first layer of intrinsic
microcrystalline silicon semiconductor in a second process chamber
by a means of plasma-enhanced chemical vapor deposition (PECVD)
under a condition of high process pressure and high plasma power,
and the second layer of intrinsic microcrystalline silicon
semiconductor is used as a light absorption layer.
13. The microcrystalline silicon thin film solar cell of claim 8,
wherein the third layer of intrinsic microcrystalline silicon
semiconductor is formed on the second layer of intrinsic
microcrystalline silicon semiconductor in a third process chamber
by a means of plasma-enhanced chemical vapor deposition (PECVD),
and the third layer of intrinsic microcrystalline silicon
semiconductor is used as a light absorption layer.
14. The microcrystalline silicon thin film solar cell of claim 8,
wherein the layer of electron-based silicon semiconductor is formed
in a pattern on the third layer of intrinsic microcrystalline
silicon semiconductor in the third process chamber by a means of
plasma-enhanced chemical vapor deposition (PECVD), and the layer of
electron-based silicon semiconductor is used as an electron-based
ohmic contact layer.
15. The microcrystalline silicon thin film solar cell of claim 8,
wherein the conductive metal layer is formed in a pattern on the
layer of electron-based silicon semiconductor by a means of
physical vapor deposition (PVD), and the conductive metal layer is
used as a back electrode, and thereby, a P-I-N structure is
achieved.
16. The microcrystalline silicon thin film solar cell of claim 8,
wherein the means of PECVD in the first process chamber is
performed using a first plasma source; the first plasma source is
capable of providing at least one type of plasma; and the first
plasma source is a very high frequency (VHF) plasma source,
featured by a frequency selected from the group consisting of:
13.56 MHz, 27.12 MHz, 40 MHz and those higher than 40 MHz.
17. The microcrystalline silicon thin film solar cell of claim 8,
wherein the means of PECVD in the second process chamber is
performed using a second plasma source; the second plasma source is
capable of providing at least one type of plasma; and the second
plasma source is a very high frequency (VHF) plasma source,
featured by a frequency selected from the group consisting of:
13.56 MHz, 27.12 MHz, 40 MHz and those higher than 40 MHz.
18. The microcrystalline silicon thin film solar cell of claim 8,
wherein the means of PECVD in the third process chamber is
performed using a third plasma source; the third plasma source is
capable of providing at least one type of plasma; and the third
plasma source is a very high frequency (VHF) plasma source,
featured by a frequency selected from the group consisting of:
13.56 MHz, 27.12 MHz, 40 MHz and those higher than 40 MHz.
19. The microcrystalline silicon thin film solar cell of claim 8,
wherein during the forming of the second layer of intrinsic
microcrystalline silicon semiconductor on the first layer of
intrinsic microcrystalline silicon semiconductor in the second
process chamber using the second plasma source, any defect in the
first layer of intrinsic microcrystalline silicon semiconductor is
remedied and repaired.
20. The microcrystalline silicon thin film solar cell of claim 8,
wherein the substrate is a substrate selected from the group
consisting of: a glass and a flexible thermal-resistant
substrate.
21. The microcrystalline silicon thin film solar cell of claim 10,
wherein the first process chamber is connected to the second
process chamber, and the second process chamber is connected to the
third process chamber, while the third process chamber is connected
to a vacuumed load-lock chamber.
22. The microcrystalline silicon thin film solar cell of claim 11,
wherein the first process chamber is connected to the second
process chamber, and the second process chamber is connected to the
third process chamber, while the third process chamber is connected
to a vacuumed load-lock chamber.
23. The microcrystalline silicon thin film solar cell of claim 12,
wherein the first process chamber is connected to the second
process chamber, and the second process chamber is connected to the
third process chamber, while the third process chamber is connected
to a vacuumed load-lock chamber.
24. The microcrystalline silicon thin film solar cell of claim 13,
wherein the first process chamber is connected to the second
process chamber, and the second process chamber is connected to the
third process chamber, while the third process chamber is connected
to a vacuumed load-lock chamber.
25. The microcrystalline silicon thin film solar cell of claim 14,
wherein the first process chamber is connected to the second
process chamber, and the second process chamber is connected to the
third process chamber, while the third process chamber is connected
to a vacuumed load-lock chamber.
Description
FIELD OF THE INVENTION
[0001] The present invention relates to a thin film and a method
for manufacturing a thin film device, and more particularly, to a
microcrystalline silicon thin film solar cell and the manufacturing
method thereof.
BACKGROUND OF THE INVENTION
[0002] Global warming is the rise in the average temperature of
Earth's atmosphere and oceans since the late 19th century that it
is primarily caused by increasing concentrations of greenhouse
gases produced by human activities such as the burning of fossil
fuels and deforestation. Recently, warming of the climate system is
unequivocal and has become perhaps the most complicated issue
facing world leaders. Thus, there are more and more clean energy
projects being proposed and developed, and among which, solar cells
for converts light energy into electrical energy are most promising
since the photovoltaic process will not releases any CO2, SO2, or
NO2 gases which don't contribute to global warming. Moreover,
Building-integrated photovoltaics (BIPV), which are photovoltaic
materials used to replace conventional building materials in parts
of the building envelope such as the roof, skylights, or facades,
are increasingly being incorporated into the construction of new
buildings. The use of BIPV had increased by 48.7% from 181.6 MW at
Year 2009 to 270.1 MW at Year 2010, and at Year 2011, it had
increased by 60% to 433 MW. In addition, the BIPV market is
expended to grow continuously to 1867.5 MW at Year 2015, which is
more than 10 times the amount of BIPV used at Year 2009. According
to EPIA, at Year 2020, the total production of solar energy can
reach 139 billion Euros. Nevertheless, since both solar power
industry and semiconductor industry need to use a lot of silicon
material, the shortage of silicon material is inevitable and
expected. Consequently, thin film solar cells which can be formed
in a thickness less than several nanometers are expected to become
the star-product in solar power industry. In recent years, there
are many means of plasma-enhanced chemical vapor deposition (PECVD)
being developed to be used for manufacturing large area thin film
silicon solar cells. Generally, a common thin film cell is a
three-layered P-I-N structure that is composed of a layer of
intrinsic semiconductor sandwiched between a layer of hole-based
silicon semiconductor, such as a p-type Si, and a layer of
electron-based silicon semiconductor, such as a n-type Si, whereas
such three-layered thin film solar cells are formed by a PECVD
means. Moreover, it is noted that microcrystalline silicon has been
recognized as useful thin-film semiconductor for solar cells since
the efficiency of such thin film solar cell can be greatly enhanced
thereby.
SUMMARY OF THE INVENTION
[0003] Conventionally, for producing high quality microcrystalline
silicon thin film with high deposition rate, a means of VHF
plasma-enhanced process of high processing pressure and high plasma
power is developed and used. However, the device characteristic
degradation due to chamber contamination and defected thin film
deposition is almost inevitable in such high processing pressure
and high plasma power manufacturing process.
[0004] Therefore, it is intended to develop a manufacturing process
capable of preventing the aforesaid problems of chamber
contamination and defected thin film deposition, while without
causing any increasing in overall manufacture cost.
[0005] Accordingly, the manufacturing method of the present
invention should have the following characteristics: [0006] (1) It
is a novel microcrystalline silicon thin film solar cell and the
manufacturing method thereof. [0007] (2) By forming multiple layers
of microcrystalline silicon thin film respectively in different
chambers using different plasma sources, the quality of so-achieved
microcrystalline silicon thin film is improved. [0008] (3) It is a
manufacturing method capable of effectively eliminating device
characteristic degradation due to chamber contamination happening
in the manufacturing process.
[0009] In an exemplary embodiment, the present invention provides a
method for manufacturing a microcrystalline silicon thin film solar
cell, which comprises the steps of: using a means of physical vapor
deposition (PVD) to form a layer of transparent conducting oxide
(TCO) and thus define a pattern on a substrate; using a means of
plasma-enhanced chemical vapor deposition (PECVD) to form a layer
of hole-based silicon semiconductor, such as a p-type Si, on the
layer of TCO in a first process chamber while enabling the layer of
hole-based silicon semiconductor to be used as a hole-based ohmic
contact layer; using a means of plasma-enhanced chemical vapor
deposition (PECVD) to form a first layer of intrinsic
microcrystalline silicon semiconductor, such as a .mu.-Si, on the
layer of hole-based silicon semiconductor in the first process
chamber while enabling the first layer of intrinsic
microcrystalline silicon semiconductor to be used as a light
absorption layer; using a means of plasma-enhanced chemical vapor
deposition (PECVD) under a condition of high processing pressure
and high plasma power to form a second layer of intrinsic
microcrystalline silicon semiconductor, such as a .mu.-Si, on the
first layer of intrinsic microcrystalline silicon semiconductor in
a second process chamber while enabling the second layer of
intrinsic microcrystalline silicon semiconductor to be used also as
a light absorption layer; using a means of plasma-enhanced chemical
vapor deposition (PECVD) to form a third layer of intrinsic
microcrystalline silicon semiconductor, such as a .mu.-Si, on the
second layer of intrinsic microcrystalline silicon semiconductor in
a third process chamber while enabling the second layer of
intrinsic microcrystalline silicon semiconductor to be used also as
a light absorption layer; using a means of plasma-enhanced chemical
vapor deposition (PECVD) to form a layer of electron-based silicon
semiconductor, such as a n-type Si, in a pattern on the third layer
of intrinsic microcrystalline silicon semiconductor in the third
process chamber while enabling the layer of electron-based silicon
semiconductor to be used also as an electron-based ohmic contact
layer; and using a means of physical vapor deposition (PVD) to form
a conductive metal layer in a pattern on the layer of
electron-based silicon semiconductor while enabling the conductive
metal layer to be used as a back electrode, and thereby, achieving
a P-I-N structure.
[0010] In another exemplary embodiment, the present invention
provides a microcrystalline silicon thin film solar cell, which
comprises: a substrate, being used as the bottom layer of the
microcrystalline silicon thin film solar cell; a layer of
transparent conducting oxide (TCO), disposed on the substrate; a
layer of hole-based silicon semiconductor, such as a p-type Si,
disposed on the layer of TCO; a first layer of intrinsic
microcrystalline silicon semiconductor, such as a .mu.-Si, disposed
on the layer of hole-based silicon semiconductor; a second layer of
intrinsic microcrystalline silicon semiconductor, such as a
.mu.-Si, disposed on the first layer of intrinsic microcrystalline
silicon semiconductor; a third layer of intrinsic microcrystalline
silicon semiconductor, such as a .mu.-Si, disposed on the second
layer of intrinsic microcrystalline silicon semiconductor; a layer
of electron-based silicon semiconductor, such as a n-type Si,
disposed on the third layer of intrinsic microcrystalline silicon
semiconductor; and a conductive metal layer, disposed on the layer
of electron-based silicon semiconductor.
[0011] Further scope of applicability of the present application
will become more apparent from the detailed description given
hereinafter. However, it should be understood that the detailed
description and specific examples, while indicating preferred
embodiments of the invention, are given by way of illustration
only, since various changes and modifications within the spirit and
scope of the invention will become apparent to those skilled in the
art from this detailed description.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] The present invention will become more fully understood from
the detailed description given herein below and the accompanying
drawings which are given by way of illustration only, and thus are
not limitative of the present invention and wherein:
[0013] FIG. 1 is a schematic diagram showing a process chamber used
in a manufacturing method of the present invention.
[0014] FIG. 2 is a schematic diagram showing a microcrystalline
silicon thin film solar cell according to an embodiment of the
invention.
[0015] FIG. 3 is a flow chart showing the steps performed in a
manufacturing method of the present invention.
DESCRIPTION OF THE EXEMPLARY EMBODIMENTS
[0016] For your esteemed members of reviewing committee to further
understand and recognize the fulfilled functions and structural
characteristics of the invention, several exemplary embodiments
cooperating with detailed description are presented as the
follows.
[0017] The present invention relates to a novel microcrystalline
silicon thin film solar cell and the manufacturing method thereof,
which is capable of effectively preventing chamber contamination
during film deposition from happening in the high processing
pressure and high plasma power PECVD process, and simultaneously
enabling the multiple layers of microcrystalline silicon thin film
respectively in different chambers using different plasma sources
while allowing the crystallinity as well as the structure of a
microcrystalline silicon thin film that is to be formed by the
manufacturing method to be controlled and adjusted at will.
[0018] Please refer to FIG. 3, which is a flow chart showing the
steps performed in a manufacturing method of the present invention.
As shown in FIG. 3, the manufacturing method of the present
invention comprises the steps of: using a means of physical vapor
deposition (PVD) to form a layer of transparent conducting oxide
(TCO) 21 and thus define a pattern on a substrate 20; using a means
of plasma-enhanced chemical vapor deposition (PECVD) to form a
layer of hole-based silicon semiconductor 22, such as a p-type Si,
on the layer of TCO 21 in a first process chamber 11 while enabling
the layer of hole-based silicon semiconductor 22 to be used as a
hole-based ohmic contact layer; using a means of plasma-enhanced
chemical vapor deposition (PECVD) to form a first layer of
intrinsic microcrystalline silicon semiconductor 23, such as a
.mu.-Si, on the layer of hole-based silicon semiconductor 22 in the
first process chamber 11 while enabling the first layer of
intrinsic microcrystalline silicon semiconductor 23 to be used as a
light absorption layer; using a means of plasma-enhanced chemical
vapor deposition (PECVD) under a condition of high processing
pressure and high plasma power to form a second layer of intrinsic
microcrystalline silicon semiconductor 24, such as a .mu.-Si, on
the first layer of intrinsic microcrystalline silicon semiconductor
23 in a second process chamber 12 while enabling the second layer
of intrinsic microcrystalline silicon semiconductor 24 to be used
also as a light absorption layer; using a means of plasma-enhanced
chemical vapor deposition (PECVD) to form a third layer of
intrinsic microcrystalline silicon semiconductor 25, such as a
.mu.-Si, on the second layer of intrinsic microcrystalline silicon
semiconductor 24 in a third process chamber 13 while enabling the
second layer of intrinsic microcrystalline silicon semiconductor 25
to be used also as a light absorption layer; using a means of
plasma-enhanced chemical vapor deposition (PECVD) to form a layer
of electron-based silicon semiconductor 26, such as a n-type Si, in
a pattern on the third layer of intrinsic microcrystalline silicon
semiconductor 25 in the third process chamber 13 while enabling the
layer of electron-based silicon semiconductor 26 to be used also as
an electron-based ohmic contact layer; and using a means of
physical vapor deposition (PVD) to form a conductive metal layer 27
in a pattern on the layer of electron-based silicon semiconductor
26 while enabling the conductive metal layer 27 to be used as a
back electrode, and thereby, achieving a P-I-N structure.
[0019] Please refer to FIG. 2, which is a schematic diagram showing
a microcrystalline silicon thin film solar cell according to an
embodiment of the invention. As shown in FIG. 2, the means of PECVD
in the first process chamber 11 is performed using a first plasma
source, whereas the first plasma source is capable of providing at
least one type of plasma; and the first plasma source is a very
high frequency (VHF) plasma source, featured by a frequency
selected from the group consisting of: 13.56 MHz, 27.12 MHz, 40 MHz
and those higher than 40 MHz. Similarly, the means of PECVD in the
second process chamber 12 is performed using a second plasma
source; the second plasma source is capable of providing at least
one type of plasma; and the first plasma source is a very high
frequency (VHF) plasma source, featured by a frequency selected
from the group consisting of: 13.56 MHz, 27.12 MHz, 40 MHz and
those higher than 40 MHz; and the means of PECVD in the third
process chamber 13 is performed using a third plasma source; the
third plasma source is capable of providing at least one type of
plasma; and the first plasma source is a very high frequency (VHF)
plasma source, featured by a frequency selected from the group
consisting of: 13.56 MHz, 27.12 MHz, 40 MHz and those higher than
40 MHz. Moreover, during the forming of the second layer of
intrinsic microcrystalline silicon semiconductor 24 on the first
layer of intrinsic microcrystalline silicon semiconductor 23 in the
second process chamber 12 using the second plasma source, any
defect in the first layer of intrinsic microcrystalline silicon
semiconductor 23 is remedied and repaired for enhancing the quality
of the resulting microcrystalline thin film. It is noted that the
first layer of intrinsic microcrystalline silicon semiconductor 23
not only can be used as a light absorption layer, it can also be
used for preventing chamber contamination from happening in the
high pressure, high power manufacturing process. In addition, the
substrate 20 is a substrate selected from the group consisting of:
a glass and a flexible thermal-resistant substrate; and the first
process chamber 11 is connected to the second process chamber 12,
and the second process chamber 12 is connected to the third process
chamber 13, while the third process chamber 13 is connected to a
vacuumed load-lock chamber. It is noted that the load-lock chamber
is being vacuumed after having a sample disposed therein, and then
after to a specific degree of vacuum is reached, the sample is then
ready to be transported for processing. Accordingly, the
crystallinity of the layer of intrinsic microcrystalline silicon
semiconductor that is to be formed in the manufacturing method can
be adjusted and controlled so as to allow the layer of hole-based
silicon semiconductor to be formed with higher energy gap (Eg).
[0020] Please refer to FIG. 1, which is a schematic diagram showing
a process chamber used in a manufacturing method of the present
invention. As shown in FIG. 1, the present invention provides a
microcrystalline silicon thin film solar cell, which comprises: a
substrate 20, being used as the bottom layer of the
microcrystalline silicon thin film solar cell; a layer of
transparent conducting oxide (TCO) 21, disposed on the substrate
20; a layer of hole-based silicon semiconductor 22, such as a
p-type Si, disposed on the layer of TCO 21; a first layer of
intrinsic microcrystalline silicon semiconductor 23, such as a
.mu.-Si, disposed on the layer of hole-based silicon semiconductor
22; a second layer of intrinsic microcrystalline silicon
semiconductor 24, such as a .mu.-Si, disposed on the first layer of
intrinsic microcrystalline silicon semiconductor 23; a third layer
of intrinsic microcrystalline silicon semiconductor 25, such as a
.mu.-Si, disposed on the second layer of intrinsic microcrystalline
silicon semiconductor 24; a layer of electron-based silicon
semiconductor 26, such as a n-type Si, disposed on the third layer
of intrinsic microcrystalline silicon semiconductor 25; and a
conductive metal layer 27, disposed on the layer of electron-based
silicon semiconductor 26. It is noted that the layer of TCO 21 is
formed in a pattern on the substrate 20 by a means of physical
vapor deposition (PVD); the layer of hole-based silicon
semiconductor 22 is formed on the layer of TCO 21 in the first
process chamber 11 by a means of plasma-enhanced chemical vapor
deposition (PECVD), and the layer of hole-based silicon
semiconductor is used as a hole-based ohmic contact layer; the
first layer of intrinsic microcrystalline silicon semiconductor 23
is formed on the layer of hole-based silicon semiconductor 22 in
the first process chamber 11 by a means of plasma-enhanced chemical
vapor deposition (PECVD), and the first layer of intrinsic
microcrystalline silicon semiconductor 23 is used as a light
absorption layer; the second layer of intrinsic microcrystalline
silicon semiconductor 24 is formed on the first layer of intrinsic
microcrystalline silicon semiconductor 23 in the second process
chamber 12 by a means of plasma-enhanced chemical vapor deposition
(PECVD) under a condition of high process pressure and high plasma
power, and the second layer of intrinsic microcrystalline silicon
semiconductor 24 is used as a light absorption layer; the third
layer of intrinsic microcrystalline silicon semiconductor 25 is
formed on the second layer of intrinsic microcrystalline silicon
semiconductor 24 in the third process chamber 13 by a means of
plasma-enhanced chemical vapor deposition (PECVD), and the third
layer of intrinsic microcrystalline silicon semiconductor 25 is
used as a light absorption layer; the layer of electron-based
silicon semiconductor 26 is formed in a pattern on the third layer
of intrinsic microcrystalline silicon semiconductor 25 in the third
process chamber 13 by a means of plasma-enhanced chemical vapor
deposition (PECVD), and the layer of electron-based silicon
semiconductor 26 is used as an electron-based ohmic contact layer;
and the conductive metal layer 27 is formed in a pattern on the
layer of electron-based silicon semiconductor 26 by a means of
physical vapor deposition (PVD), and the conductive metal layer 27
is used as a back electrode, and thereby, a P-I-N structure is
achieved.
[0021] Similarly, the means of PECVD in the first process chamber
11 is performed using a first plasma source, whereas the first
plasma source is capable of providing at least one type of plasma;
and the first plasma source is a very high frequency (VHF) plasma
source, featured by a frequency selected from the group consisting
of: 13.56 MHz, 27.12 MHz, 40 MHz and those higher than 40 MHz.
Similarly, the means of PECVD in the second process chamber 12 is
performed using a second plasma source; the second plasma source is
capable of providing at least one type of plasma; and the first
plasma source is a very high frequency (VHF) plasma source,
featured by a frequency selected from the group consisting of:
13.56 MHz, 27.12 MHz, 40 MHz and those higher than 40 MHz; and the
means of PECVD in the third process chamber 13 is performed using a
third plasma source; the third plasma source is capable of
providing at least one type of plasma; and the first plasma source
is a very high frequency (VHF) plasma source, featured by a
frequency selected from the group consisting of: 13.56 MHz, 27.12
MHz, 40 MHz and those higher than 40 MHz. Moreover, during the
forming of the second layer of intrinsic microcrystalline silicon
semiconductor 24 on the first layer of intrinsic microcrystalline
silicon semiconductor 23 in the second process chamber 12 using the
second plasma source, any defect in the first layer of intrinsic
microcrystalline silicon semiconductor 23 is remedied and repaired
for enhancing the quality of the resulting microcrystalline thin
film. It is noted that the first layer of intrinsic
microcrystalline silicon semiconductor 23 not only can be used as a
light absorption layer, it can also be used for preventing chamber
contamination from happening in the high pressure, high power
manufacturing process. In addition, the substrate 20 is a substrate
selected from the group consisting of: a glass and a flexible
thermal-resistant substrate; and the first process chamber 11 is
connected to the second process chamber 12, and the second process
chamber 12 is connected to the third process chamber 13, while the
third process chamber 13 is connected to a vacuumed load-lock
chamber. It is noted that the load-lock chamber is being vacuumed
after having a sample disposed therein, and then after to a
specific degree of vacuum is reached, the sample is then ready to
be transported for processing.
[0022] With respect to the above description then, it is to be
realized that the optimum dimensional relationships for the parts
of the invention, to include variations in size, materials, shape,
form, function and manner of operation, assembly and use, are
deemed readily apparent and obvious to one skilled in the art, and
all equivalent relationships to those illustrated in the drawings
and described in the specification are intended to be encompassed
by the present invention.
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