U.S. patent application number 13/944247 was filed with the patent office on 2014-03-20 for capacitor and organic light emitting diode display including the same.
The applicant listed for this patent is Samsung Display Co., Ltd.. Invention is credited to Choong-Youl Im, Moo-Soon Ko, Do-Hyun Kwon, Il-Jeong Lee, Min-Woo Woo, Ju-Won Yoon.
Application Number | 20140077184 13/944247 |
Document ID | / |
Family ID | 50273536 |
Filed Date | 2014-03-20 |
United States Patent
Application |
20140077184 |
Kind Code |
A1 |
Im; Choong-Youl ; et
al. |
March 20, 2014 |
CAPACITOR AND ORGANIC LIGHT EMITTING DIODE DISPLAY INCLUDING THE
SAME
Abstract
A capacitor positioned on a substrate insulating layer
positioned on a substrate. The capacitor includes a first capacitor
electrode positioned on the substrate insulating layer, a second
capacitor electrode positioned on the first capacitor electrode,
and a capacitor insulating layer coming into contact with the first
capacitor electrode and the second capacitor electrode between the
first capacitor electrode and the second capacitor electrode, and
having a higher dielectric constant than the substrate insulating
layer.
Inventors: |
Im; Choong-Youl;
(Yongin-city, KR) ; Lee; Il-Jeong; (Yongin-city,
KR) ; Kwon; Do-Hyun; (Yongin-city, KR) ; Yoon;
Ju-Won; (Yongin-city, KR) ; Ko; Moo-Soon;
(Yongin-city, KR) ; Woo; Min-Woo; (Yongin-city,
KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Samsung Display Co., Ltd. |
Yongin-city |
|
KR |
|
|
Family ID: |
50273536 |
Appl. No.: |
13/944247 |
Filed: |
July 17, 2013 |
Current U.S.
Class: |
257/40 ;
257/532 |
Current CPC
Class: |
H01L 27/3265 20130101;
H01L 2924/0002 20130101; H01L 51/52 20130101; H01L 29/4908
20130101; H01L 2924/00 20130101; H01L 27/3262 20130101; H01L
2924/0002 20130101; H01L 27/3248 20130101; H01L 28/40 20130101;
H01L 28/60 20130101 |
Class at
Publication: |
257/40 ;
257/532 |
International
Class: |
H01L 49/02 20060101
H01L049/02; H01L 51/52 20060101 H01L051/52 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 19, 2012 |
KR |
10-2012-0103951 |
Claims
1. A capacitor structure, comprising: a substrate; a substrate
insulating layer positioned on the substrate; and a capacitor
comprising: a first capacitor electrode positioned on the substrate
insulating layer; a second capacitor electrode positioned on the
first capacitor electrode; and a capacitor insulating layer coming
into contact with the first capacitor electrode and the second
capacitor electrode between the first capacitor electrode and the
second capacitor electrode, the capacitor insulating layer having a
higher dielectric constant than the substrate insulating layer.
2. The capacitor structure of claim 1, wherein: the capacitor
insulating layer includes one or more of zirconium (Zr) oxide,
hafnium (Hf) oxide, titanium (Ti) oxide, tantalum (Ta) oxide,
lanthanum (La) oxide, yttrium (Y) oxide, barium (Ba) oxide,
strontium (Sr) oxide, calcium (Ca) oxide, and magnesium (Mg)
oxide.
3. The capacitor structure of claim 2, wherein: the second
capacitor electrode includes a molybdenum (Mo) alloy including
nickel (Ni).
4. The capacitor structure of claim 3, wherein: the first capacitor
electrode includes the molybdenum (Mo) alloy including nickel
(Ni).
5. The capacitor structure of claim 4, further comprising: a first
auxiliary electrode coming into contact with the first capacitor
electrode; and a second auxiliary electrode coming into contact
with the second capacitor electrode.
6. The capacitor structure of claim 5, further comprising: a third
auxiliary electrode coming into contact with the second auxiliary
electrode on the second auxiliary electrode to include the
molybdenum (Mo) alloy including nickel (Ni).
7. The capacitor structure of claim 3, wherein: the first capacitor
electrode includes a polysilicon semiconductor material or a metal
oxide semiconductor material.
8. The capacitor structure of claim 7, further comprising: a fourth
auxiliary electrode coming into contact with the second capacitor
electrode.
9. The capacitor structure of claim 8, further comprising: a fifth
auxiliary electrode coming into contact with the fourth auxiliary
electrode on the fourth auxiliary electrode to include the
molybdenum (Mo) alloy including nickel (Ni).
10. An organic light emitting diode display comprising: a capacitor
structure according to claim 1; a driving thin film transistor
including a driving gate electrode connected to the capacitor; and
an organic light emitting element connected to the driving drain
electrode of the driving thin film transistor.
11. The organic light emitting diode display of claim 10, further
comprising: a scan line extending in a first direction; a data line
extending in a second direction crossing the first direction; a
switching thin film transistor including a switching gate electrode
connected to the scan line, a switching source electrode connected
to the data line, and a switching drain electrode connected to the
capacitor and the driving gate electrode; and a driving power
source line connected to the driving source electrode and the
capacitor of the driving thin film transistor and extending in the
second direction.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims priority to and the benefit of
Korean Patent Application No. 10-2012-0103951 filed in the Korean
Intellectual Property Office on Sep. 19, 2012, the entire contents
of which are incorporated herein by reference.
BACKGROUND
[0002] 1. Field
[0003] The described technology relates generally to a capacitor
and an organic light emitting diode display including the same, and
more particularly, to a capacitor formed on a substrate, and an
organic light emitting diode display including the same.
[0004] 2. Description of the Related Technology
[0005] A display device is a device displaying an image, and
currently, organic light emitting diode displays are receiving
attention.
[0006] Since the organic light emitting diode display has a
self-light emitting characteristic so that a separate light source
is not required unlike a liquid crystal display device, a thickness
and a weight thereof may be reduced. Further, the organic light
emitting diode display exhibits high-quality characteristics such
as low power consumption, high luminance, and high reaction
speed.
[0007] An organic light emitting diode display typically includes
an organic light emitting element, a thin film transistor connected
to the organic light emitting element, and a capacitor connected to
a gate electrode of the thin film transistor. The capacitor
includes a first capacitor electrode and a second capacitor
electrode facing each other, and a capacitor insulating layer
positioned between the first capacitor electrode and the second
capacitor electrode.
[0008] The above information disclosed in this Background section
is only for enhancement of understanding of the background of the
described technology and therefore it may contain information that
does not form the prior art that is already known in this country
to a person of ordinary skill in the art.
SUMMARY OF CERTAIN INVENTIVE ASPECTS
[0009] The described technology has been made in an effort to
provide a capacitor having maximized capacity, and an organic light
emitting diode display including the same.
[0010] A first embodiment provides a capacitor structure, which
includes a substrate, a substrate insulation layer and a capacitor.
The capacitor includes: a first capacitor electrode positioned on
the substrate insulating layer; a second capacitor electrode
positioned on the first capacitor electrode; and a capacitor
insulating layer coming into contact with the first capacitor
electrode and the second capacitor electrode between the first
capacitor electrode and the second capacitor electrode, and having
a higher dielectric constant as compared to the substrate
insulating layer.
[0011] The capacitor insulating layer may include one or more of
zirconium (Zr) oxide, hafnium (Hf) oxide, titanium (Ti) oxide,
tantalum (Ta) oxide, lanthanum (La) oxide, yttrium (Y) oxide,
barium (Ba) oxide, strontium (Sr) oxide, calcium (Ca) oxide, and
magnesium (Mg) oxide.
[0012] The second capacitor electrode may include a molybdenum (Mo)
alloy including nickel (Ni).
[0013] The first capacitor electrode may include the molybdenum
(Mo) alloy including nickel (Ni).
[0014] The capacitor structure may further include: a first
auxiliary electrode coming into contact with the first capacitor
electrode; and a second auxiliary electrode coming into contact
with the second capacitor electrode.
[0015] The capacitor structure may further include: a third
auxiliary electrode coming into contact with the second auxiliary
electrode on the second auxiliary electrode to include the
molybdenum (Mo) alloy including nickel (Ni).
[0016] The first capacitor electrode may include a polysilicon
semiconductor material or a metal oxide semiconductor material.
[0017] The capacitor structure may further include: a fourth
auxiliary electrode coming into contact with the second capacitor
electrode.
[0018] The capacitor structure may further include: a fifth
auxiliary electrode coming into contact with the fourth auxiliary
electrode on the fourth auxiliary electrode to include the
molybdenum (Mo) alloy including nickel (Ni).
[0019] A second embodiment provides an organic light emitting diode
display including: the capacitor structure described above; a
driving thin film transistor including a driving gate electrode
connected to the capacitor; and an organic light emitting element
connected to the driving drain electrode of the driving thin film
transistor.
[0020] The organic light emitting diode display may further
include: a scan line extending in a first direction; a data line
extending in a second direction crossing the first direction; a
switching thin film transistor including a switching gate electrode
connected to the scan line, a switching source electrode connected
to the data line, and a switching drain electrode connected to the
capacitor and the driving gate electrode; and a driving power
source line connected to the driving source electrode and the
capacitor of the driving thin film transistor and extending in the
second direction.
[0021] According to the foregoing embodiments, there are provided a
capacitor having maximized capacity, and an organic light emitting
diode display including the same.
BRIEF DESCRIPTION OF THE DRAWINGS
[0022] FIG. 1 is a view showing an organic light emitting diode
display according to a first embodiment.
[0023] FIG. 2 is a circuit diagram showing a pixel portion shown in
FIG. 1.
[0024] FIG. 3 is a cross-sectional view showing the capacitor shown
in FIG. 2.
[0025] FIG. 4 is a cross-sectional view showing a capacitor
according to a second embodiment.
[0026] FIG. 5 is a cross-sectional view showing a capacitor
according to a third embodiment.
[0027] FIG. 6 is a cross-sectional view showing a capacitor
according to a fourth embodiment.
[0028] FIG. 7 is a cross-sectional view showing a capacitor
according to a fifth embodiment.
[0029] FIG. 8 is a cross-sectional view showing a capacitor
according to a sixth embodiment.
DETAILED DESCRIPTION OF CERTAIN INVENTIVE EMBODIMENTS
[0030] Embodiments of the present invention will be described more
fully hereinafter with reference to the accompanying drawings. As
those skilled in the art would realize, the described embodiments
may be modified in various ways, all without departing from the
spirit or scope of the present invention.
[0031] The drawings and description are to be regarded as
illustrative in nature and not restrictive. Like reference numerals
generally designate like elements throughout the specification.
[0032] Further, in various embodiments, since like reference
numerals designate like elements having the same configuration, a
first embodiment is representatively described, and in other
embodiments, only a configuration different from the first
embodiment will be described.
[0033] In addition, the size and thickness of each configuration
shown in the drawings are arbitrarily shown for understanding and
ease of description, but the present invention is not limited
thereto.
[0034] In the drawings, the thickness of layers, films, panels,
regions, etc., may be exaggerated for clarity. In the drawings, for
understanding and ease of description, the thickness of some layers
and areas may be exaggerated. It will be understood that when an
element such as a layer, film, region, or substrate is referred to
as being "on" another element, it can be directly on the other
element or intervening elements may also be present.
[0035] Further, unless explicitly described to the contrary, the
word "comprise" and variations such as "comprises" or "comprising",
will be understood to imply the inclusion of stated elements but
not the exclusion of any other elements. In addition, in the
specification, the word "on" means positioning on or below the
object portion, but does not essentially mean positioning on the
upper side of the object portion based on a gravity direction.
[0036] Hereinafter, referring to FIGS. 1 to 3, an organic light
emitting diode display according to a first embodiment will be
described.
[0037] FIG. 1 is a view showing a display device according to a
first embodiment.
[0038] As shown in FIG. 1, an organic light emitting diode display
1000 according to the first embodiment includes a substrate SUB, a
gate driver GD, gate wires GW, a data driver DD, data wires DW, and
a pixel PE. The pixel PE represents a minimum unit displaying an
image, and the organic light emitting diode display 1000 displays
the image through a plurality of pixels PE.
[0039] The substrate SUB is formed of a transparent insulating
substrate formed of glass, quartz, ceramics, plastics, and the
like. However, the first embodiment is not limited thereto, and the
substrate SUB may be formed of a metal substrate that is formed of
stainless steel and the like. Further, in the case where the
substrate SUB is made of plastics and the like, the organic light
emitting diode display 1000 may have a flexible characteristic, or
a stretchable or rollable characteristic.
[0040] The gate driver GD corresponds to a control signal provided
from an external control circuit not shown in the drawings, for
example, a timing controller and the like, to sequentially provide
a scan signal to the gate wires GW. Then, the pixel PE is selected
by the scan signal to sequentially receive a data signal.
[0041] The gate wires GW are positioned on the substrate SUB, and
extend in a first direction. The gate wires GW include scan lines
SC1-SCn, and the scan line SCn is connected to the gate driver GD
to receive the scan signal from the gate driver GD.
[0042] In the organic light emitting diode display 1000 according
to the first embodiment, the gate wires GW include the scan line
SCn, but in an organic light emitting diode display according to
another embodiment, the gate wires may further include an
additional scan line, an initialization power source line, a light
emission control line, and the like. In this case, the display
device may be an active matrix (AM) type organic light emitting
diode display having a 6Tr-2Cap structure.
[0043] The data driver DD corresponds to the control signal
provided from the outside such as a timing controller to provide
the data signal to the data line DAm among the data wires DW. The
data signal provided to the data line DAm is provided to the pixel
PE selected by the scan signal whenever the scan signal is provided
to the scan line SCn. Then, the pixel PE charges a voltage
corresponding to the data signal, and emits light in luminance
corresponding thereto.
[0044] The data wires DW may be positioned on the gate wires GW or
between the gate wires GW and the substrate SUB, and extend in a
second direction crossing the first direction. The data wires DW
include data lines D1-DAm and a driving power source line ELVDDL.
The data line DAm is connected to the data driver DD, and receives
the data signal from the data driver DD. A driving power source
line ELVDDL is connected to an external first power source ELVDD,
and receives driving power from the first power source ELVDD.
[0045] The pixel PE is positioned in a region in which the gate
wires GW and the data wires DW cross to connect the gate wires GW
and the data wires DW. The pixel PE includes the first power source
ELVDD, two thin film transistors and a capacitor connected to the
gate wires GW and the data wires DW, and an organic light emitting
element connected to a second power source ELVSS with the thin film
transistor therebetween. The pixel PE is selected when the scan
signal is provided through the scan line SCn, charges the voltage
corresponding to the data signal through the data line DAm, and
corresponds to the charged voltage to emit light of a predetermined
luminance. A detailed disposal of the pixel PE is described
below.
[0046] Hereinafter, referring to FIG. 2, a disposal of the pixel PE
is described in detail.
[0047] FIG. 2 is a circuit diagram showing a pixel portion shown in
FIG. 1.
[0048] As shown in FIG. 2, one pixel PE has a 2Tr-1Cap structure
where the organic light emitting diode (OLED), two thin film
transistors (TFT) T1 and T2, and one capacitor C are disposed.
However, in another embodiment, one pixel may have a structure
where different numbers of thin film transistors and capacitors are
disposed.
[0049] The organic light emitting diode (OLED) includes a first
electrode that is an anode acting as a hole injection electrode, a
second electrode that is a cathode acting as an electron injection
electrode, and an organic emission layer disposed between the first
electrode and the second electrode.
[0050] In the first embodiment, the display device includes a
switching thin film transistor T2, a driving thin film transistor
T1, and a capacitor C formed for each one pixel PE.
[0051] The switching thin film transistor T2 includes a switching
gate electrode G2, a switching active layer A2, a switching source
electrode S2, and a switching drain electrode D2.
[0052] The switching gate electrode G2 is connected to the scan
line SCn. The switching active layer A2 is positioned to correspond
to the switching gate electrode G2, and the switching source
electrode S2 and the switching drain electrode D2 are connected to
ends thereof. The switching source electrode S2 is connected to the
data line DAm. The switching drain electrode D2 is spaced apart
from the switching source electrode S2 with the switching gate
electrode G2 interposed therebetween to be connected to a second
capacitor electrode CE2 of the capacitor C with the driving gate
electrode G1 of the driving thin film transistor T1 interposed
therebetween.
[0053] The driving thin film transistor T1 includes a driving gate
electrode G1, a driving active layer A1, a driving source electrode
S1, and a driving drain electrode D1.
[0054] The driving gate electrode G1 is connected to the switching
drain electrode D2 of the switching thin film transistor T2 and the
second capacitor electrode CE2 of the capacitor C. The driving
active layer A1 is connected to the first capacitor electrode CE1
of the capacitor C. The driving source electrode S1 and the driving
drain electrode D1 are spaced apart from each other with the
driving gate electrode G1 interposed therebetween to be connected
to both ends of the driving active layer A1. The driving source
electrode S1 is connected to the driving power source line ELVDDL,
and the driving drain electrode D1 is connected to the first
electrode that is the anode of the organic light emitting diode
(OLED).
[0055] That is, the switching source electrode S2 of the switching
thin film transistor T2 is connected to the data line DAm, and the
switching gate electrode G2 of the switching thin film transistor
T2 is connected to the scan line SCn. Further, a node is formed
between the switching drain electrode D2 of the switching thin film
transistor T2 and the capacitor C to allow the switching drain
electrode D2 of the switching thin film transistor T2 to be
connected to the second capacitor electrode CE2 of the capacitor C.
In addition, the switching drain electrode D2 of the switching thin
film transistor T2 is connected to the driving gate electrode G1 of
the driving thin film transistor T1. Moreover, the driving power
source line ELVDDL is connected to the driving source electrode S1
of the driving thin film transistor T1, and the first electrode
that is the anode of the organic light emitting diode (OLED) is
connected to the driving drain electrode D1.
[0056] FIG. 3 is a cross-sectional view showing the capacitor shown
in FIG. 2.
[0057] As shown in FIGS. 2 and 3, the capacitor C is positioned on
the substrate insulating layer SIL positioned on the substrate SUB,
and includes the first capacitor electrode CE1 and the second
capacitor electrode CE2 facing each other, and the capacitor
insulating layer CIL. The substrate insulating layer SIL may be an
inorganic insulating layer including silicon oxide (SiOx), silicon
nitride (SiNx), and the like, or an organic insulating layer
including a photosensitive material.
[0058] The first capacitor electrode CE1 is positioned on the
substrate insulating layer SIL, and may be formed by the same
material as and by the same one process as the constitution
selected from the scan line SCn, the data line DAm, the driving
power source line ELVDDL, the driving gate electrode G1 of the
driving thin film transistor T1, the driving source electrode S1,
the driving drain electrode D1, the driving active layer A1, the
switching gate electrode G2 of the switching thin film transistor
T2, the switching source electrode S2, the switching drain
electrode D2, and the switching active layer A2, or may be formed
by the same material as the additional constitution. The first
capacitor electrode CE1 is connected through the driving active
layer A1 and the driving source electrode S1 of the driving thin
film transistor T1 to the driving power source line ELVDDL. The
first capacitor electrode CE1 includes the molybdenum (Mo) alloy
including nickel (Ni). The first capacitor electrode CE1 includes
the molybdenum alloy including nickel to have a thermodynamically
stable state.
[0059] The second capacitor electrode CE2 is positioned on the
first capacitor electrode CE1 with the capacitor insulating layer
CIL interposed therebetween. The second capacitor electrode CE2 is
positioned on the substrate insulating layer SIL, and may be formed
by the same material as and by the same one process as the
constitution selected from the scan line SCn, the data line DAm,
the driving power source line ELVDDL, the driving gate electrode G1
of the driving thin film transistor T1, the driving source
electrode S1, the driving drain electrode D1, the driving active
layer A1, the switching gate electrode G2 of the switching thin
film transistor T2, the switching source electrode S2, the
switching drain electrode D2, and the switching active layer A2, or
may be formed by the same material as the additional constitution.
The second capacitor electrode CE2 is connected through the driving
gate electrode G1 of the driving thin film transistor T1 to the
switching drain electrode D2 of the switching thin film transistor
T2. The second capacitor electrode CE2 includes the molybdenum (Mo)
alloy including nickel (Ni). The second capacitor electrode CE2
includes the molybdenum alloy including nickel to have a
thermodynamically stable state.
[0060] The capacitor insulating layer CIL comes into contact with
the first capacitor electrode CE1 and the second capacitor
electrode CE2 between the first capacitor electrode CE1 and the
second capacitor electrode CE2, and has a higher dielectric
constant as compared to the substrate insulating layer SIL. The
capacitor insulating layer CIL includes one or more of zirconium
(Zr) oxide, hafnium (Hf) oxide, titanium (Ti) oxide, tantalum (Ta)
oxide, lanthanum (La) oxide, yttrium (Y) oxide, barium (Ba) oxide,
strontium (Sr) oxide, calcium (Ca) oxide, and magnesium (Mg) oxide,
and may have ten or more dielectric constants.
[0061] The switching thin film transistor T2 is used as a switch
selecting the pixel PE that is to emit light. If the switching thin
film transistor T2 is instantaneously turned-on, power is provided
from the driving power source line ELVDDL to the first capacitor
electrode CE1 of the capacitor C, and at the same time, power is
provided from the data line DAm through the switching thin film
transistor T2 to the second capacitor electrode CE2, thus
accumulating the capacitor C by capacity. In this case, the
accumulated amount of charges is proportional to the voltage
applied from the data line DAm. Further, in a state where the
switching thin film transistor T2 is turned-off, a gate potential
of the driving thin film transistor T1 is increased according to
the potential accumulated in the capacitor C. In addition, the
driving thin film transistor T1 is turned-on if the gate potential
is more than a threshold voltage. Then, the voltage applied to the
driving power source line ELVDDL is applied through the driving
thin film transistor T1 to the organic light emitting diode (OLED),
and thus, the organic light emitting diode (OLED) emits light.
[0062] The aforementioned constitution of the pixel PE is not
limited thereto, and may be variously modified.
[0063] As described above, in the organic light emitting diode
display 1000 according to the first embodiment, the capacitor
insulating layer CIL of the capacitor C includes one or more of
zirconium (Zr) oxide, hafnium (Hf) oxide, titanium (Ti) oxide,
tantalum (Ta) oxide, lanthanum (La) oxide, yttrium (Y) oxide,
barium (Ba) oxide, strontium (Sr) oxide, calcium (Ca) oxide, and
magnesium (Mg) oxide having a higher dielectric constant as
compared to the substrate insulating layer SIL that is a general
insulating layer to maximize capacity of the capacitor C.
[0064] Further, in the organic light emitting diode display 1000
according to the first embodiment, even though the capacitor
insulating layer CIL of the capacitor C includes one or more of
zirconium (Zr) oxide, hafnium (Hf) oxide, titanium (Ti) oxide,
tantalum (Ta) oxide, lanthanum (La) oxide, yttrium (Y) oxide,
barium (Ba) oxide, strontium (Sr) oxide, calcium (Ca) oxide, and
magnesium (Mg) oxide, the first capacitor electrode CE1 and the
second capacitor electrode CE2 that are in contact with the
capacitor insulating layer CIL include the molybdenum alloy
including thermodynamically stable nickel, such that even though
heat is applied to the substrate SUB during a manufacturing process
of the organic light emitting diode display 1000, undesired oxide
layers are not formed at an interface between the capacitor
insulating layer CIL and the first capacitor electrode CE1 and at
an interface between the capacitor insulating layer CIL and the
second capacitor electrode CE2. Thereby, deterioration of the
capacity by the undesired oxide layer is suppressed.
[0065] In detail, for example, the first capacitor electrode and
the second capacitor electrode are formed of metal such as titanium
or molybdenum, and in the case where the capacitor insulating layer
includes one or more of zirconium (Zr) oxide, hafnium (Hf) oxide,
titanium (Ti) oxide, tantalum (Ta) oxide, lanthanum (La) oxide,
yttrium (Y) oxide, barium (Ba) oxide, strontium (Sr) oxide, calcium
(Ca) oxide, and magnesium (Mg) oxide, the undesired oxide layers
are formed at the interface between the first capacitor electrode
and the capacitor insulating layer and at the interface between the
second capacitor electrode and the capacitor insulating layer by
heat generated during the manufacturing process of the organic
light emitting diode display in order to maximize the capacity of
the capacitor. In this case, the undesired oxide layers may be
formed at the interface between the first capacitor electrode and
the capacitor insulating layer and at the interface between the
second capacitor electrode and the capacitor insulating layer to
bond oxygen included in the capacitor insulating layer and metal
included in the first capacitor electrode and the second capacitor
electrode to each other, such that an oxygen deficiency phenomenon
occurs in the capacitor insulating layer to reduce the capacitor
insulating layer into metal, thus deteriorating the total capacity
of the capacitor.
[0066] However, in the capacitor C of the organic light emitting
diode display 1000 according to the first embodiment, in order to
maximize the capacity of the capacitor C, even though the capacitor
insulating layer CIL includes one or more of zirconium (Zr) oxide,
hafnium (Hf) oxide, titanium (Ti) oxide, tantalum (Ta) oxide,
lanthanum (La) oxide, yttrium (Y) oxide, barium (Ba) oxide,
strontium (Sr) oxide, calcium (Ca) oxide, and magnesium (Mg) oxide,
the first capacitor electrode CE1 and the second capacitor
electrode CE2 include the molybdenum alloy including
thermodynamically stable nickel, such that even though heat is
applied to the substrate SUB during a manufacturing process of the
organic light emitting diode display 1000, undesired oxide layers
are not formed at the interface between the capacitor insulating
layer CIL and the first capacitor electrode CE1 and at the
interface between the capacitor insulating layer CIL and the second
capacitor electrode CE2.
[0067] That is, the capacitor C having the maximized capacity and
the organic light emitting diode display 1000 including the same
are provided.
[0068] Meanwhile, in the organic display device 1000 according to
the first embodiment, the organic light emitting diode display
including the capacitor C is described as an example, but the
capacitor C according to another embodiment may be included in
another display device such as a liquid crystal display (LCD).
[0069] Further, the first capacitor electrode CE1 and the second
capacitor electrode CE2 of the capacitor C of the organic light
emitting diode display 1000 according to the first embodiment
include the molybdenum alloy including nickel, but one or more of
the first capacitor electrode and the second capacitor electrode of
the capacitor according to another embodiment may include a
transparent conductive material such as indium tin oxide (ITO),
indium zinc oxide (IZO), zinc oxide (ZnO), or indium oxide.
[0070] Hereinafter, referring to FIG. 4, a capacitor according to a
second embodiment will be described.
[0071] Hereinafter, only specific portions that are different from
those of the first embodiment are extracted to be described, and an
omitted portion of description thereof depends on the first
embodiment. Further, in the second embodiment, for better
comprehension and ease of description, the same constituent
elements are designated by the same reference numerals as the first
embodiment.
[0072] FIG. 4 is a cross-sectional view showing a capacitor
according to a second embodiment.
[0073] As shown in FIG. 4, the capacitor C2 according to the second
embodiment includes a first capacitor electrode CE1, a second
capacitor electrode CE2, a capacitor insulating layer CIL, a first
auxiliary electrode SE1, and a second auxiliary electrode SE2.
[0074] The first auxiliary electrode SE1 is positioned between the
substrate insulating layer SIL and the first capacitor electrode
CE1, and is in contact with the first capacitor electrode CE1. The
second auxiliary electrode SE2 is in contact with the second
capacitor electrode CE2 on the second capacitor electrode CE2. The
first auxiliary electrode SE1 and the second auxiliary electrode
SE2 may include metal such as molybdenum or titanium.
[0075] As described above, in the capacitor C2 according to the
second embodiment, since the first auxiliary electrode SE1 and the
second auxiliary electrode SE2 come into contact with the first
capacitor electrode CE1 and the second capacitor electrode CE2 to
deteriorate electric resistance of each of the first capacitor
electrode CE1 and the second capacitor electrode CE2, a voltage
drop of a current flowing through the first capacitor electrode CE1
and the second capacitor electrode CE2 is suppressed.
[0076] That is, the capacitor C2 having the maximized capacity is
provided.
[0077] Hereinafter, referring to FIG. 5, a capacitor according to a
third embodiment will be described.
[0078] Hereinafter, only specific portions that are different from
those of the second embodiment are extracted to be described, and
an omitted portion of description thereof depends on the second
embodiment. Further, in the third embodiment, for better
comprehension and ease of description, the same constituent
elements are designated by the same reference numerals as the
second embodiment.
[0079] FIG. 5 is a cross-sectional view showing a capacitor
according to a third embodiment.
[0080] As shown in FIG. 5, the capacitor C3 according to the third
embodiment includes a first capacitor electrode CE1, a second
capacitor electrode CE2, a capacitor insulating layer CIL, a first
auxiliary electrode SE1, a second auxiliary electrode SE2, and a
third auxiliary electrode SE3.
[0081] The third auxiliary electrode SE3 is in contact with the
second auxiliary electrode SE2 on the second auxiliary electrode
SE2, and includes the molybdenum alloy including nickel.
[0082] As described above, in the capacitor C3 according to the
third embodiment, the third auxiliary electrode SE3 including the
molybdenum alloy including nickel is in contact with the second
auxiliary electrode SE2 on the second auxiliary electrode SE2
formed of metal to suppress oxidation of the second auxiliary
electrode SE2 by heat even though heat is applied to the substrate
SUB.
[0083] That is, the capacitor C3 having the maximized capacity is
provided.
[0084] Hereinafter, referring to FIG. 6, a capacitor according to a
fourth embodiment will be described.
[0085] Hereinafter, only specific portions that are different from
those of the first embodiment are extracted to be described, and an
omitted portion of description thereof depends on the first
embodiment. In addition, in the fourth embodiment, for better
comprehension and ease of description, the same constituent
elements are designated by the same reference numerals as the first
embodiment.
[0086] FIG. 6 is a cross-sectional view showing a capacitor
according to a fourth embodiment.
[0087] As shown in FIG. 6, the capacitor C4 according to the fourth
embodiment includes a first capacitor electrode CE1 and a second
capacitor electrode CE2 facing each other, and a capacitor
insulating layer CIL.
[0088] The first capacitor electrode CE1 is positioned on the
substrate insulating layer SIL, and includes the polysilicon
semiconductor material or the metal oxide semiconductor material.
The first capacitor electrode CE1 includes the polysilicon
semiconductor material or the metal oxide semiconductor material to
have a thermodynamically stable state. The first capacitor
electrode CE1 may be doped with an impurity.
[0089] As described above, in the capacitor C4 according to the
fourth embodiment, even though the capacitor insulating layer CIL
includes one or more of zirconium (Zr) oxide, hafnium (Hf) oxide,
titanium (Ti) oxide, tantalum (Ta) oxide, lanthanum (La) oxide,
yttrium (Y) oxide, barium (Ba) oxide, strontium (Sr) oxide, calcium
(Ca) oxide, and magnesium (Mg) oxide, the first capacitor electrode
CE1 and the second capacitor electrode CE2 that are in contact with
the capacitor insulating layer CIL include the thermodynamically
stable silicon semiconductor material or metal oxide semiconductor
material and the thermodynamically stable molybdenum alloy
including nickel, such that even though heat is applied to the
substrate SUB, undesired oxide layers are not formed at the
interface between the capacitor insulating layer CIL and the first
capacitor electrode CE1 and at the interface between the capacitor
insulating layer CIL and the second capacitor electrode CE2.
Thereby, deterioration of the capacity by the undesired oxide layer
is suppressed.
[0090] That is, the capacitor C4 having the maximized capacity is
provided.
[0091] Hereinafter, referring to FIG. 7, a capacitor according to a
fifth embodiment will be described.
[0092] Hereinafter, only specific portions that are different from
those of the fourth embodiment are extracted to be described, and
an omitted portion of description thereof depends on the fourth
embodiment. Further, in the fifth embodiment, for better
comprehension and ease of description, the same constituent
elements are designated by the same reference numerals as the
fourth embodiment.
[0093] FIG. 7 is a cross-sectional view showing a capacitor
according to a fifth embodiment.
[0094] As shown in FIG. 7, the capacitor C5 according to the fifth
embodiment includes the first capacitor electrode CE1, the second
capacitor electrode CE2, the capacitor insulating layer CIL, and
the fourth auxiliary electrode SE4.
[0095] The fourth auxiliary electrode SE4 is in contact with the
second capacitor electrode CE2 on the second capacitor electrode
CE2. The fourth auxiliary electrode SE4 may include metal such as
molybdenum or titanium.
[0096] As described above, in the capacitor C5 according to the
fifth embodiment, since the fourth auxiliary electrode SE4 is in
contact with the second capacitor electrode CE2 to deteriorate
electric resistance of the second capacitor electrode CE2, a
voltage drop of a current flowing through the second capacitor
electrode CE2 is suppressed.
[0097] That is, the capacitor C5 having the maximized capacity is
provided.
[0098] Hereinafter, referring to FIG. 8, a capacitor according to a
sixth embodiment will be described.
[0099] Hereinafter, only specific portions that are different from
those of the fifth embodiment are extracted to be described, and an
omitted portion of description thereof depends on the fifth
embodiment. Further, in the sixth embodiment, for better
comprehension and ease of description, the same constituent
elements are designated by the same reference numerals as the fifth
embodiment.
[0100] FIG. 8 is a cross-sectional view showing a capacitor
according to a sixth embodiment.
[0101] As shown in FIG. 8, the capacitor C6 according to the sixth
embodiment includes a first capacitor electrode CE1, a second
capacitor electrode CE2, a fourth auxiliary electrode SE4, and a
fifth auxiliary electrode SE5.
[0102] The fifth auxiliary electrode SE5 is in contact with the
fourth auxiliary electrode SE4 on the fourth auxiliary electrode
SE4, and includes the molybdenum alloy including nickel.
[0103] As described above, in the capacitor C6 according to the
sixth embodiment, the fifth auxiliary electrode SE5 including the
molybdenum alloy including nickel is in contact with the fourth
auxiliary electrode SE4 on the fourth auxiliary electrode SE4
formed of metal to suppress oxidation of the fourth auxiliary
electrode SE4 by heat even though heat is applied to the substrate
SUB.
[0104] That is, the capacitor C6 having the maximized capacity is
provided.
[0105] While this disclosure has been described in connection with
certain embodiments, it is to be understood that the invention is
not limited to the disclosed embodiments, but, on the contrary, is
intended to cover various modifications and equivalent arrangements
included within the spirit and scope of the appended claims.
DESCRIPTION OF SYMBOLS
[0106] Substrate SUB, Substrate insulating layer SIL, First
capacitor electrode CE1, Second capacitor electrode CE2, Capacitor
insulating layer CIL
* * * * *